Semiconductor nanoparticles, method of manufacturing same, and electronic device including same

Abstract

A semiconductor nanoparticle, a method of manufacturing the nanoparticle, and an electronic device including the nanoparticle are provided. The semiconductor nanoparticles include silver, indium, gallium, and sulfur, where in the semiconductor nanoparticles, a molar ratio of gallium to indium (Ga: In) is greater than or equal to about 6.7: 1 and less than or equal to about 40: 1, a molar ratio of silver to indium (Ag: In) is greater than or equal to about 5: 1 and less than or equal to about 30: 1, the semiconductor nanoparticles are configured to emit light, and a full width at half maximum of an emission spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.

Description

[0001] This application claims the priority and all benefits arising therefrom of Korean Patent Application No. 10-2024-0015313, filed with the Korean Intellectual Property Office on January 31, 2024, the content of which is incorporated herein by reference in its entirety. Technical Field

[0002] Disclosed are a semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, an electronic device including the semiconductor nanoparticle, and a color conversion panel. Background Art

[0003] Semiconductor nanoparticles may exhibit different aspects, characteristics, or properties compared to their corresponding bulk materials having substantially the same composition. For example, semiconductor nanoparticles may have different physical properties (e.g., bandgap energy, luminescent properties, etc.) based on their nanostructures. Semiconductor nanoparticles can be configured to emit light when excited by incident light or an applied voltage. Luminescent nanostructures can find applicability in various devices (e.g., display panels or electronic devices including display panels). From an environmental perspective, it is desirable to develop a luminescent nanoparticle that does not contain harmful heavy metals (such as cadmium) and also achieves an improvement in one or more luminescent or optical properties. Summary of the Invention

[0004] One aspect relates to a semiconductor nanoparticle or a population of semiconductor nanoparticles.

[0005] One aspect relates to a method of manufacturing a semiconductor nanoparticle that exhibits improved physical properties and / or an increase in yield.

[0006] One aspect relates to a composition (e.g., an ink composition) including semiconductor nanoparticles.

[0007] One aspect relates to a color conversion panel including semiconductor nanoparticles.

[0008] One aspect relates to an electronic device (e.g., a display device) including semiconductor nanoparticles or a color conversion panel.

[0009] One aspect provides a semiconductor nanoparticle including silver, indium, gallium, and sulfur. In the semiconductor nanoparticle, the molar ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1 and less than or equal to about 40:1. The molar ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 30:1. The semiconductor nanoparticle is configured to emit light, and the full width at half maximum of the emission spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.

[0010] The semiconductor nanoparticles may include a Group 11-13-16 compound containing silver, indium, gallium, and sulfur. The semiconductor nanoparticles may include a first semiconductor nanocrystal and a second semiconductor nanocrystal, the first semiconductor nanocrystal containing silver, indium, gallium, and sulfur, and the second semiconductor nanocrystal containing silver, gallium, and sulfur.

[0011] The semiconductor nanoparticles may further include zinc. The semiconductor nanoparticles may include a semiconductor nanocrystal (e.g., a third semiconductor nanocrystal or a fourth semiconductor nanocrystal) containing zinc, sulfur, and optionally gallium.

[0012] In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be greater than or equal to about 10.5:1, greater than or equal to about 15:1, greater than or equal to about 15.5:1, or greater than or equal to about 20:1. In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be less than or equal to about 37:1, less than or equal to about 36:1, or less than or equal to about 35:1.

[0013] In the semiconductor nanoparticles, the molar ratio of silver to indium (Ag:In) may be greater than or equal to 6.5:1, greater than or equal to about 7:1, greater than or equal to about 10:1 and less than or equal to about 25:1, less than or equal to about 20:1, or less than or equal to about 17:1.

[0014] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to silver [(In + Ga):Ag] may be greater than or equal to about 1.3:1, greater than or equal to about 1.4:1, or greater than or equal to about 1.45:1 and less than or equal to about 2.5:1, less than or equal to about 2.0:1, or less than or equal to about 1.65:1.

[0015] In the semiconductor nanoparticles, the molar ratio of indium to sulfur (In:S) may be greater than or equal to about 0.005:1 or greater than or equal to about 0.01:1 and less than or equal to about 0.1:1 or less than or equal to about 0.08:1.

[0016] In the semiconductor nanoparticles, the molar ratio of gallium to sulfur (Ga:S) may be greater than or equal to about 0.3:1, greater than or equal to about 0.4:1, or greater than or equal to about 0.48:1 and less than or equal to about 0.85:1, less than or equal to about 0.65:1, or less than or equal to about 0.55:1.

[0017] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to sulfur [(In + Ga):S] may be greater than or equal to about 0.4:1 or greater than or equal to about 0.55:1 and less than or equal to about 0.85:1, less than or equal to about 0.75:1, or less than or equal to about 0.67:1.

[0018] In semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) can be greater than or equal to about 0.33:1 or greater than or equal to about 0.35:1 and less than or equal to about 0.45:1 or less than or equal to about 0.44:1.

[0019] In semiconductor nanoparticles, the molar ratio of silver to the sum of silver, indium, and gallium [Ag: (Ag+In+Ga)] can be greater than or equal to about 0.31:1 or greater than or equal to about 0.38:1 and less than or equal to about 0.42:1 or less than or equal to about 0.40:1.

[0020] In semiconductor nanoparticles, the molar ratio of sulfur to the sum of silver, indium, and gallium [S:(Ag+In+Ga)] can be greater than or equal to about 0.8:1 or greater than or equal to about 0.92:1 and less than or equal to about 1.12:1, less than or equal to about 1.1:1, less than or equal to about 1.08:1 or less than or equal to about 1.06:1.

[0021] The semiconductor nanoparticles can have a charge balance value defined by Equation 1 below that is greater than or equal to about 0.95 and less than or equal to about 1.3 or less than or equal to about 1.2: Equation 1A Charge balance value = {[Ag] + 3([In] + [Ga])} / (2[S]) where, in Equation 1A, [Ag], [In], [Ga], and [S] are the molar amounts of silver, indium, gallium, and sulfur in the semiconductor nanoparticles, respectively.

[0022] The semiconductor nanoparticles can exhibit a quantum yield of greater than or equal to about 40 percent (%) or greater than or equal to about 60% (e.g., absolute quantum yield, hereinafter referred to as "quantum yield"). The light or semiconductor nanoparticles can have a maximum emission wavelength of greater than or equal to about 480 nanometers (nm) to less than or equal to about 650 nm.

[0023] The light can be green light.

[0024] The maximum emission wavelength of the (green) light or semiconductor nanoparticles can be greater than or equal to about 500 nm, greater than or equal to about 505 nm to less than or equal to about 580 nm or less than or equal to about 550 nm.

[0025] The full width at half maximum can be greater than or equal to about 15 nm and less than or equal to about 45 nm.

[0026] In ultraviolet-visible (UV-Vis) absorption spectroscopy, the semiconductor nanoparticles can exhibit a ratio of the absorbance at 350 nm to the absorbance at 370 nm that is less than or equal to about 1.2:1 or less than or equal to about 1.1:1. In UV-Vis absorption spectroscopy, the semiconductor nanoparticles can exhibit a ratio of the absorbance at 350 nm to the absorbance at 370 nm that is greater than or equal to about 0.1:1 or greater than or equal to about 0.3:1.

[0027] The semiconductor nanoparticles can also include bromine.

[0028] In the semiconductor nanoparticles, based on the amount of indium, the amount of bromine can be greater than or equal to about 0.05 mole percent (mol%), greater than or equal to about 0.1 mol%, greater than or equal to about 0.3 mol%, greater than or equal to about 0.4 mol%, greater than or equal to about 0.5 mol%, greater than or equal to about 1 mol% or greater than or equal to about 3 mol% and less than or equal to about 3200 mol% (e.g., the ratio of bromine to indium (Br:In) is 32:1), less than or equal to about 3000 mol%, less than or equal to about 2000 mol%, less than or equal to about 1000 mol%, less than or equal to about 500 mol%, less than or equal to about 100 mol% or less than or equal to about 10 mol%.

[0029] In an embodiment, a method of making semiconductor nanoparticles includes combining (i) a first semiconductor nanocrystal comprising silver, a Group 13 element, and a chalcogen, (ii) a sulfur precursor, (iii) a gallium precursor, and (iv) a medium comprising an organic solvent (e.g., adding (i) the first semiconductor nanocrystal comprising silver, a Group 13 element, and a chalcogen, (ii) the sulfur precursor, (iii) the gallium precursor to (iv) the medium comprising an organic solvent) to provide a reaction mixture; and heating the reaction mixture (or the medium) (e.g., at a predetermined temperature).

[0030] The gallium precursor includes gallium bromide.

[0031] The method includes adding a silver compound to a reaction mixture. The silver compound can be added to the medium in an amount relative to the gallium precursor that is greater than or equal to about 0.0001 mol%, greater than or equal to about 0.001 mol%, greater than or equal to about 0.003 mol%, greater than or equal to about 0.004 mol%, greater than or equal to about 0.005 mol%, greater than or equal to about 0.01 mol%, greater than or equal to about 0.03 mol%, greater than or equal to about 0.05 mol%, greater than or equal to about 0.052 mol%, greater than or equal to about 0.1 mol%, greater than or equal to about 0.2 mol%, or greater than or equal to about 0.5 mol% and less than or equal to about 50 mol% (e.g., less than or equal to about 25 mol%).

[0032] The amount of the silver compound can be greater than or equal to about 0.03 mol%, greater than or equal to about 0.05 mol%, or greater than or equal to about 1 mol% and less than or equal to about 12 mol%. The silver compound can include silver carboxylate, silver acetylacetonate, silver halide, or a combination thereof.

[0033] The predetermined temperature can be greater than or equal to about 120 °C (e.g., greater than or equal to about 180 °C) to less than or equal to about 380 °C. The medium can be heated at a temperature greater than or equal to about 220 °C to less than or equal to about 280 °C.

[0034] The method can include adding a first semiconductor nanocrystal and a gallium precursor to a medium including an organic solvent, a sulfur precursor, and an organic ligand.

[0035] The gallium precursor can further include or can be free of gallium chloride, gallium iodide, or a combination thereof.

[0036] The gallium precursor can include gallium bromide and gallium chloride (or gallium iodide), and for every 1 mole of gallium bromide, the amount of gallium chloride (or gallium iodide) can be greater than or equal to about 0.001 mole, greater than or equal to about 0.005 mole, greater than or equal to about 0.01 mole, greater than or equal to about 0.05 mole, greater than or equal to about 0.1 mole, or greater than or equal to about 0.5 mole and less than or equal to about 0.8 mole.

[0037] In an embodiment, an ink composition can include the aforementioned semiconductor nanoparticles and a liquid carrier. A population of the semiconductor nanoparticles can be dispersed in the liquid carrier. The liquid carrier can include a liquid monomer, an organic solvent, or a combination thereof. The ink composition can be substantially free of volatile organic solvents. The ink composition can further include metal oxide nanoparticles.

[0038] In one aspect, a semiconductor nanoparticle composite may include a matrix and semiconductor nanoparticles, wherein the semiconductor nanoparticles are dispersed in the matrix. The semiconductor nanoparticle composite may be a patterned film. The semiconductor nanoparticle composite may be a sheet in which a first semiconductor nanoparticle emitting a first light and a second semiconductor nanoparticle emitting a second light are mixed, wherein the first light and the second light may be different.

[0039] In embodiments, the semiconductor nanoparticle composite may exhibit an internal quantum efficiency (IQE) or an external quantum efficiency (EQE) greater than or equal to about 50%, and the IQE and EQE are defined by Equation 2 and Equation 3, respectively: Equation 2 Internal quantum efficiency (%) = [A / (B - B')] × 100% Equation 3 External quantum efficiency (%) = [A / B] × 100% Where: A: The amount of the first light emitted from the semiconductor nanoparticle composite B: The amount of incident light irradiated B': The amount of incident light irradiated that passes through the semiconductor nanoparticle composite.

[0040] The semiconductor nanoparticle composite may be heat-treated at 180 °C for 30 minutes, and the process retention percentage obtained by Equation 4 may be greater than or equal to about 50%: Equation 4 Process retention percentage (%) = [QE2 / QE1] × 100% Where, QE1: The quantum efficiency of the semiconductor nanoparticle composite before heat treatment QE2: The quantum efficiency of the semiconductor nanoparticle composite after heat treatment In Equation 4, the quantum efficiency may be the internal quantum efficiency or the external quantum efficiency.

[0041] In one aspect, a color conversion layer (e.g., a color conversion structure) is provided, the color conversion layer including a color conversion region including the aforementioned semiconductor nanoparticles. In embodiments, the color conversion panel may include a color conversion layer (e.g., a color conversion structure) including the color conversion region and optionally a partition wall defining each region of the color conversion layer. The color conversion region may include a first region corresponding to a first pixel. The first region includes a first composite, and the first composite may include a matrix and semiconductor nanoparticles dispersed in the matrix, wherein the first region is configured to emit a first light.

[0042] In an embodiment, a display panel (or display device) may include a light source and a semiconductor nanoparticle composite. In an embodiment, the display panel may include a light-emitting panel (or light source), a color conversion panel, and optionally, a light-transmitting layer (light transmission layer) located between the light-emitting panel and the color conversion panel.

[0043] The light-emitting panel (or light source) may be configured to provide incident light to the color conversion panel (alternatively, the light-emitting panel (or light source) provides incident light to the color conversion panel). The incident light may include blue light and optionally green light. The blue light may have a peak emission wavelength of about 440 nm to about 460 nm or about 450 nm to about 455 nm.

[0044] The light source may include an organic light-emitting diode (OLED), a micro-LED, a mini-LED, an LED containing nanorods, or a combination thereof.

[0045] In an embodiment, an electronic device (or display device) may include a color conversion panel or a display panel.

[0046] The electronic device or display device may include a virtual reality device, an augmented reality device, a portable terminal device, a monitor, a laptop PC, a television, an electronic display board, or an electronic component for an automobile or vehicle.

[0047] The semiconductor nanoparticles of the embodiment may exhibit improved process stability. A polymer composite including the semiconductor nanoparticles of the embodiment may minimize an increase in trap light emission and a decrease in luminous efficiency caused by high-temperature treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The above and other aspects, features, and advantages of some exemplary embodiments will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0049] Figure 1A is a flowchart showing a pattern formation process (lithography method) using the ink composition of the embodiment.

[0050] Figure 1B is a flowchart showing a pattern formation process (inkjet method) using the ink composition of the embodiment.

[0051] Figure 2A is a schematic cross-sectional view of a color conversion panel according to an embodiment.

[0052] Figure 2B is a cross-sectional view of an electronic device (display device) including a color conversion panel according to an embodiment.

[0053] Figure 3A is a perspective view showing a display panel including a color conversion panel according to an embodiment.

[0054] Figure 3B is an exploded view of a display device according to an embodiment.

[0055] Figure 3C is Figure 3A a cross-sectional view of a display panel of

[0056] Figure 4 is an exploded view of a display device according to an embodiment.

[0057] Figure 5A is a plan view showing Figure 3A the pixel arrangement of a display panel of

[0058] Figure 5B , Figure 5C , Figure 5D and Figure 5E are cross-sectional views showing light-emitting devices according to embodiments, respectively.

[0059] Figure 6 is Figure 5A a cross-sectional view taken along line IV-IV of a display panel of

[0060] Figure 7A is a schematic cross-sectional view of a display device (e.g., a liquid crystal display device) according to an embodiment.

[0061] Figure 7B is a schematic cross-sectional view of an electronic device (e.g., a light-emitting device) according to an embodiment.

[0062] Figure 8 is the UV-Vis absorption spectrum of the semiconductor nanoparticles prepared in Example 5. DETAILED DESCRIPTION

[0063] Referring to the exemplary embodiments described in further detail below in conjunction with the accompanying drawings, the advantages and features of the techniques described hereinafter and the methods for implementing them will become clear. However, the embodiments should not be construed as limited to the exemplary embodiments set forth herein. All terms (including technical and scientific terms) used herein, unless otherwise defined, may be defined as commonly understood by one of ordinary skill in the art. Terms defined in a general dictionary, unless clearly defined otherwise, may not be construed in an idealized or exaggerated manner. Further, unless explicitly described to the contrary, the word "comprising" and variations such as "comprises" or "containing" will be understood to imply the inclusion of the stated elements but not the exclusion of any other elements.

[0064] In the drawings, for clarity, the thicknesses of layers, films, panels, regions, etc. are exaggerated. Throughout the specification, like reference numerals denote like elements.

[0065] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements.

[0066] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms including “at least one.” For example, the phrase “semiconductor nanoparticles” can refer to a single semiconductor nanoparticle or can refer to a plurality of semiconductor nanoparticles. “At least one” will not be construed as being limited to “one” or “a.” “Or” means “and / or.” As used herein, the term “and / or” includes any combination and all combinations of one or more of the associated listed items.

[0067] It will be understood that although the terms “first,” “second,” “third,” etc. may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, without departing from the teachings of the given embodiments, the “first element,” “first component,” “first region,” “first layer,” or “first portion” discussed below could be named a second element, second component, second region, second layer, or second portion.

[0068] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. As such, variations in the illustrated shapes are to be expected, for example, due to manufacturing techniques and / or tolerances. Thus, the embodiments described herein should not be construed as being limited to the particular shapes of the regions shown herein, but will include, for example, shape deviations resulting from manufacturing. For example, regions shown or described as flat will generally have rough and / or non-linear features. Additionally, sharp angles shown may be rounded. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the exact shape of the regions and are not intended to limit the scope of the given claims.

[0069] As used herein, “about” or “approximately” includes the stated value and means within an acceptable deviation range of the particular value as determined by one of ordinary skill in the art in view of the measurements discussed and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “about” can mean within one or more standard deviations, or within ±10%, ±5% of the stated value.

[0070] As used herein, the expression "free of cadmium (or other heavy metals)" may mean a situation where the concentration of cadmium (or other heavy metals) is less than or equal to about 100 parts per million by weight (100 ppmw), less than or equal to about 50 ppmw, less than or equal to about 10 ppmw, less than or equal to about 1 ppmw, less than or equal to about 0.1 ppmw, less than or equal to about 0.01 ppmw, or about zero. In one or more embodiments, cadmium (or other heavy metals) may be substantially absent, or if present, the amount of cadmium (or other heavy metals) may be less than or equal to the detection limit or the impurity level of a given analytical tool.

[0071] As used herein below, when no definition is otherwise provided, "substituted" means that at least one hydrogen of a compound is replaced by a substituent selected from C1-C30 alkyl, C2-C30 alkenyl, C2-C30 alkynyl, C6-C30 aryl, C7-C30 alkylaryl, C7-C30 arylalkyl, C6-C30 aryloxy, C6-C30 arylthio, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 heteroalkyl, C3-C30 heteroalkylaryl, C2-C30 alkylheteroaryl, C2-C30 heteroarylalkyl, C1-C30 heteroaryloxy, C1-C3 heteroarylthio, C3-C30 cycloalkyl, C3-C15 cycloalkenyl, C6-C30 cycloalkynyl, C2-C30 heterocycloalkyl, halogen (-F, -Cl, -Br or -I), hydroxy (-OH), nitro (-NO2), cyano (-CN), amino or amine group (-NRR', where R and R' are each independently hydrogen or C1-C6 alkyl), azide (-N3), amidino (-C(=NH)NH2), hydrazino (-NHNH2), hydrazono (=N(NH2)), aldehyde (-C(=O)H), carbamoyl (-C(O)NH2), mercapto (-SH), ester group (-C(=O)OR, where R is C1-C6 alkyl or C6-C12 aryl), carboxyl (-COOH) or its salt (-C(=O)OM, where M is an organic cation or an inorganic cation), sulfonic acid group (-SO3H) or its salt (-SO3M, where M is an organic cation or an inorganic cation), phosphoric acid group (-PO3H2) or its salt (-PO3MH or -PO3M2, where M is an organic cation or an inorganic cation), and combinations thereof. The specified number or range of carbon atoms in a group does not include any substituents.

[0072] In addition, when no definition is otherwise provided below, "hetero" means including 1 to 3 heteroatoms (such as N, O, P, Si, S, Se, Ge or B).

[0073] In addition, as used herein, the term "aliphatic hydrocarbon group" refers to a C1 to C30 straight or branched chain alkyl group, a C2 to C30 straight or branched chain alkenyl group, or a C2 to C30 straight or branched chain alkynyl group, and the term "aromatic organic group" as used herein refers to a C6 to C30 aryl group or a C2 to C30 heteroaryl group.

[0074] As used herein, the term "(meth)acrylate" refers to acrylate and / or methacrylate.

[0075] As used herein, the term "group" refers to a group in the Periodic Table of the Elements.

[0076] As used herein, the terms "nanoparticle" and "nanostructure" refer to a structure having at least one region or characteristic dimension with nanoscale dimensions. In one or more embodiments, the size of the nanoparticle or nanostructure can be less than about 500 nm, less than about 300 nm, less than about 250 nm, less than about 150 nm, less than about 100 nm, less than about 50 nm, or less than about 30 nm. The nanoparticle or nanostructure can have any shape, such as nanowires, nanorods, nanotubes, multi-armed shapes having two or more arms, nanodots, etc., but the embodiments are not limited thereto. The nanoparticle or nanostructure can be, for example, substantially crystalline, substantially single crystal, polycrystalline, amorphous, or a combination thereof.

[0077] Quantum dots can be, for example, semiconductor-containing nanocrystalline particles that can exhibit quantum confinement effects or exciton confinement effects, and are a type of luminescent nanostructure (e.g., a luminescent nanostructure capable of emitting light upon energy excitation). Herein, unless otherwise clearly defined, the shape of the "quantum dot" or nanoparticle is not limited.

[0078] As used herein, the term "dispersion" refers to a dispersion in which the dispersed phase is a solid and the continuous medium comprises a liquid or a solid different from the dispersed phase. It will be understood that the "dispersion" can be a colloidal dispersion, in which the dispersed phase has a size greater than or equal to about 1 nm (e.g., greater than or equal to about 2 nm, greater than or equal to about 3 nm, or greater than or equal to about 4 nm) and less than or equal to a few micrometers (μm) (e.g., less than or equal to about 2 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 800 nm, less than or equal to about 700 nm, less than or equal to about 600 nm, or less than or equal to about 500 nm).

[0079] Here, a dimension (size (or dimension), diameter, thickness, etc.) can be a value for a single entity or an average value for a plurality of nanoparticles. As used herein, the term "average value" (e.g., average size (or average dimension) of quantum dots) can be a mean value or a median value. In one or more embodiments, the average value can be a "mean" average value.

[0080] As used herein, the term "maximum emission wavelength" is the wavelength at which a given emission spectrum of light reaches its maximum.

[0081] In one or more embodiments, commercially available devices (e.g., from Hitachi or Hamamatsu, etc.) can be used and the quantum efficiency can be easily and reproducibly determined with reference to the operation guides provided by the corresponding device manufacturers, for example. The quantum efficiency (which can be used interchangeably with the term "quantum yield" (QY)) can be measured in solution state or in solid state (i.e., in a complex). In one or more embodiments, the quantum efficiency (or quantum yield) is the ratio of the photons emitted by the nanostructure (or group of nanostructures) to the photons absorbed by the nanostructure (or group of nanostructures). In one or more embodiments, the quantum efficiency can be measured by any suitable method. For example, there can be two methods for measuring the fluorescence quantum yield or efficiency: the absolute method and the relative method. The quantum efficiency measured by the absolute method can be referred to as the absolute quantum efficiency.

[0082] In the absolute method, the quantum efficiency can be obtained by detecting the fluorescence of all samples via an integrating sphere. In the relative method, the quantum efficiency of an unknown sample can be calculated by comparing the fluorescence intensity of a standard dye (standard sample) with that of the unknown sample. Coumarin 153, Coumarin 545, Rhodamine 101 inner salt, Anthracene, and Rhodamine 6G can be used as standard dyes according to their photoluminescence (PL) wavelengths, but the embodiments are not limited thereto.

[0083] The full width at half maximum (FWHM) and the maximum emission wavelength (e.g., maximum photoluminescence (PL) wavelength or maximum electroluminescence (EL) maximum) can be measured, for example, from the emission spectrum (e.g., photoluminescence spectrum or electroluminescence spectrum) obtained by a spectrophotometer (such as a fluorescence spectrophotometer, etc.).

[0084] As used herein, the term "first absorption peak wavelength" refers to the wavelength at which the main peak first appears in the lowest energy region in the ultraviolet-visible (UV-Vis) absorption spectrum.

[0085] Semiconductor nanoparticles can be included in various electronic devices. The electrical and / or optical properties of semiconductor nanoparticles can be controlled, for example, by the elemental composition of the semiconductor nanoparticles, the size of the semiconductor nanoparticles, and / or the shape of the semiconductor nanoparticles. In one or more embodiments, the semiconductor nanoparticles can be semiconductor nanocrystal particles. Semiconductor nanoparticles such as quantum dots can have a relatively large surface area per unit volume and can thus exhibit quantum confinement effects, thereby exhibiting physical and optical properties different from those of the corresponding bulk materials having the same composition. Thus, semiconductor nanoparticles such as quantum dots can absorb energy (e.g., incident light) supplied from an excitation source to form an excited state, which can emit energy corresponding to its bandgap upon relaxation.

[0086] Semiconductor nanoparticles can also be used in color conversion panels (e.g., photoluminescent color filters). Different from white light-emitting backlight units used in liquid crystal display devices, in a display device including a color conversion panel or a light-emitting type color filter containing quantum dots, a quantum dot layer serves as a light-emitting material and is disposed in the relatively front part of the device to convert incident light (e.g., blue light) supplied from a light source into light of a different spectrum (e.g., green light or red light). In such a color conversion panel, color conversion of the excitation light can occur in the relatively front part of the device, and light can be scattered in all directions, which can solve the viewing angle problem of liquid crystal displays and can also solve the light loss problem caused by the use of absorption-type color filters. As used herein, the term "color conversion panel" refers to an electronic device including a color conversion layer (or color conversion structure).

[0087] In a display device including a color conversion panel, the properties (e.g., optical properties, stability, etc.) of the light-emitting nanostructures can have a direct impact on the display quality of the device. It is desirable that the light-emitting material included in the color conversion panel disposed in the relatively front part of the device not only exhibits a relatively high light-emitting efficiency but also exhibits a relatively high absorption rate with respect to incident light. When a patterned film (e.g., a color filter) is used in a display device, the reduced absorption rate of incident light can be a direct cause of blue light leakage, which has an adverse effect on the color reproducibility (e.g., DCI matching rate) of the device. Employing an absorption-type color filter to prevent blue light leakage problems may lead to an additional reduction in light-emitting efficiency. Such a reduced absorption rate of semiconductor nanoparticles may result in reduced brightness in a device including the semiconductor nanoparticles.

[0088] Semiconductor nanoparticles can exhibit properties applicable to devices (e.g., optical properties and / or stability), but many of them may include cadmium-containing compounds (e.g., cadmium chalcogenides). Cadmium causes serious environmental / health problems and is thus one of the restricted elements in many countries. Therefore, in order to develop cadmium-free and environmentally friendly nanoparticles, in-depth research on III-V compound-based nanocrystals has been carried out. However, cadmium-free nanoparticles including III-V compounds (e.g., indium phosphide) may encounter technical limitations in incident light absorption rate and full width at half maximum. Therefore, there is still a technical need to develop environmentally friendly nanoparticles that can exhibit higher absorption rate, narrower full width at half maximum, and higher luminescence efficiency compared to cadmium-free nanoparticles based on III-V compounds such as indium phosphide.

[0089] In an embodiment, the semiconductor nanoparticles may not contain cadmium. The semiconductor nanoparticles may not contain mercury, lead, or a combination thereof. In an embodiment, the semiconductor nanoparticles may contain silver, indium, gallium, and sulfur (11-13-16 group compounds including silver, indium, gallium, and sulfur). The semiconductor nanoparticles may have a size greater than or equal to about 2 nanometers (nm), or greater than or equal to about 5 nm and less than or equal to about 50 nm, less than or equal to about 10 nm, or less than or equal to about 8 nm.

[0090] In an embodiment, the semiconductor nanoparticles may include a first semiconductor nanocrystal, the first semiconductor nanocrystal including silver, a group 13 element, and a chalcogen element (11-13-16 group compounds including silver, a group 13 element, and a chalcogen element). The first semiconductor nanocrystal may further include zinc or may not include zinc. The group 13 element may include indium, gallium, or a combination thereof. The chalcogen element may include sulfur and optionally selenium. The first semiconductor nanocrystal may include silver, a group 13 metal (e.g., indium, gallium, or a combination thereof), and a group 16 element (e.g., sulfur and optionally selenium). The first semiconductor nanocrystal may include a quaternary alloy semiconductor material based on 11-13-16 group compounds containing silver, indium, gallium, and sulfur. The semiconductor nanoparticles or the first semiconductor nanocrystal may include indium gallium silver sulfide (abbreviated as AIGS hereinafter). The first semiconductor nanocrystal may include Ag(In x Ga 1-x )S2 (where x is greater than 0 and less than or equal to 1). The molar ratio between the components in the first semiconductor nanocrystal can be adjusted such that the final semiconductor nanoparticles can have a desired composition and optical properties (e.g., maximum emission wavelength).

[0091] The semiconductor nanoparticles may further include a second semiconductor nanocrystal, additional semiconductor nanocrystals (e.g., a third semiconductor nanocrystal and / or a fourth semiconductor nanocrystal), or a combination thereof. The second semiconductor nanocrystal includes gallium, sulfur, and optionally silver and has a composition different from that of the first semiconductor nanocrystal. The second semiconductor nanocrystal may include a Group 13-16 compound, a Group 11-13-16 compound, or a combination thereof. The Group 13-16 compound may include gallium sulfide, gallium selenide, indium sulfide, indium selenide, indium gallium sulfide, indium gallium selenide, indium gallium sulfoselenide, or a combination thereof. The second semiconductor nanocrystal may include gallium and chalcogens (sulfur and optionally selenium). The second semiconductor nanocrystal may include a ternary alloy semiconductor material containing silver, gallium, and sulfur. The molar ratio between the components in the second semiconductor nanocrystal may be adjusted to achieve the desired composition and optical properties of the final semiconductor nanoparticles.

[0092] The additional semiconductor nanocrystals may include zinc, sulfur, and optionally gallium. In an embodiment, the third semiconductor nanocrystal may include zinc, gallium, and sulfur. The fourth semiconductor nanocrystal may include zinc and sulfur. The third semiconductor nanocrystal may include zinc gallium sulfide. The fourth semiconductor nanocrystal may include zinc sulfide.

[0093] The second semiconductor nanocrystal may cover at least a portion of the first semiconductor nanocrystal. The bandgap energy of the second semiconductor nanocrystal may be different from the bandgap energy of the first semiconductor nanocrystal. The bandgap energy of the second semiconductor nanocrystal may be greater than the bandgap energy of the first semiconductor nanocrystal. The bandgap energy of the second semiconductor nanocrystal may be less than the bandgap energy of the first semiconductor nanocrystal. The bandgap energy of the additional semiconductor nanocrystals (e.g., the third semiconductor nanocrystal or the fourth semiconductor nanocrystal) may be greater than the bandgap energy of the second semiconductor nanocrystal. The bandgap energy of the additional semiconductor nanocrystals (e.g., the third semiconductor nanocrystal or the fourth semiconductor nanocrystal) may be greater than the bandgap energy of the first semiconductor nanocrystal. The layer including the third semiconductor nanocrystal or the fourth semiconductor nanocrystal may be the outermost layer of the semiconductor nanoparticles.

[0094] The semiconductor nanoparticles may have a core-shell structure having a core and a shell disposed on the core. The core may include the first semiconductor nanocrystal, and the shell may include the second semiconductor nanocrystal. The shell may be a multi-layer shell, and the multi-layer shell may include a first shell layer disposed on the core, a second shell layer disposed on the first shell layer, and a third shell layer disposed on the second shell layer. The first shell layer may include the second semiconductor nanocrystal or the third semiconductor nanocrystal. The second shell layer may include the second semiconductor nanocrystal or the third semiconductor nanocrystal. The third shell layer may include additional semiconductor nanocrystals (e.g., the third semiconductor nanocrystal and / or the fourth semiconductor nanocrystal), the additional semiconductor nanocrystals including zinc, sulfur, and optionally gallium (including zinc chalcogenides or zinc gallium chalcogenides).

[0095] In embodiments, the semiconductor nanoparticles can have a core-multishell structure, such as AgInGaS / AgGaS, AgInGaS / AgGaS / GaS, AgInGaS / AgGaS / ZnGaS, AgInGaS / AgGaS / ZnS, or AgInGaS / AgGaS / ZnGaS / ZnS.

[0096] In the semiconductor nanoparticles, the concentration of indium can vary radially. In the semiconductor nanoparticles, the amount or concentration of indium in the inner portion of the semiconductor nanoparticles can be different from the amount or concentration of indium in the outer portion of the particle. In embodiments, the amount or concentration of indium in a portion of the semiconductor nanoparticles adjacent to the surface (e.g., the outermost layer or shell) can be lower than the amount or concentration of indium in the inner portion (or core) of the particle. In embodiments, the amount or concentration of zinc in a portion of the semiconductor nanoparticles adjacent to the surface (e.g., in the outermost layer of the semiconductor nanoparticles) can be higher than the amount or concentration of zinc in the inner portion (or core) of the particle. In the semiconductor nanoparticles, the concentration of zinc can be higher in the outer portion of the particle than in the inner portion. The core or the first semiconductor nanocrystal may not include zinc. In the shell, gallium can exhibit a radial concentration gradient (e.g., increasing or decreasing). In the shell, the concentration of gallium in a portion adjacent to the particle surface can be higher than the concentration of gallium in a portion adjacent to the core.

[0097] In embodiments, semiconductor nanoparticles comprising group 13 metals (indium, gallium) and chalcogens (sulfur) and silver (Ag) can achieve desired luminescent properties (e.g., increased quantum yield and reduced full width at half maximum) without cadmium and can exhibit enhanced stability in subsequent processes (e.g., heat treatment). The semiconductor nanoparticles containing 11-13-16 group compounds according to embodiments can achieve improved optical properties and stability by adjusting their composition as described herein (e.g., the molar ratio of elements or charge balance value as described herein).

[0098] A display device including a color conversion layer containing semiconductor nanoparticles as a color conversion material may or may not include a light source (e.g., a blue LED or a blue OLED) that provides incident light of a relatively short wavelength. If present, the incident light (e.g., blue light) may have higher energy (e.g., about ~2.75 electron volts (eV) or less) compared to the color conversion light such as red or green. It is desirable to provide a color conversion layer that can maintain the light conversion efficiency and color purity even when repeatedly exposed to the light incident on the color conversion layer. The preparation of the color conversion layer may involve a process of forming a composite (such as a polymer composite or a pattern of a composite) including semiconductor nanoparticles, which may involve a high-temperature process. The inventors have found that when the AIGS-containing semiconductor nanoparticles are exposed to such a high-temperature process, they may exhibit a significant decrease in the light conversion efficiency and a significant increase in trap emission (i.e., long-wavelength emission) (e.g., compared to their initial properties before exposure).

[0099] For the AIGS-containing semiconductor nanoparticles to be used as a color conversion layer, it may be necessary to ensure the stability of the AIGS semiconductor nanoparticles (e.g., process retention in terms of luminescent properties and trap emission). The semiconductor nanoparticles according to an embodiment may be manufactured by the method described herein and may include an inorganic layer (e.g., a semiconductor nanocrystal shell coating) to provide the composition described herein. The inventors have found that compared to the semiconductor nanoparticles manufactured by currently known shell coating processes, the semiconductor nanoparticles manufactured by the method described herein may have the molar ratio and structure of the elements described herein, and may exhibit the maintenance of the desired level of luminescence efficiency even after film formation in which they undergo a baking process involving a relatively high temperature, and they may also show trap emission suppressed to the desired level.

[0100] In an embodiment, the semiconductor nanoparticles include silver, indium, gallium, and sulfur, and in the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1, greater than or equal to about 19:1, or greater than or equal to about 20:1 and less than or equal to about 40:1, and the molar ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 20:1. The semiconductor nanoparticles can be configured to emit light (e.g., green light). The light can have a full width at half maximum greater than or equal to about 10 nm and less than or equal to about 50 nm. The semiconductor nanoparticles can include a 11-13-16 group compound containing silver, indium, gallium, and sulfur. The semiconductor nanoparticles can include a first semiconductor nanocrystal containing silver, indium, gallium, and sulfur and a second semiconductor nanocrystal containing silver, gallium, and sulfur. The semiconductor nanoparticles can further include zinc. The semiconductor nanoparticles can further include a third semiconductor nanocrystal containing zinc, sulfur, and optionally gallium, a fourth semiconductor nanocrystal containing zinc and sulfur, or a combination thereof. The semiconductor nanoparticles can have a core-shell structure. Details of the structures of the first semiconductor nanocrystal, the second semiconductor nanocrystal, the third semiconductor nanocrystal, the fourth semiconductor nanocrystal, and the semiconductor nanoparticles are as described herein.

[0101] The semiconductor nanoparticles can further include or not include lithium. The semiconductor nanoparticles can further include or not include an alkali metal (e.g., lithium, sodium, potassium, etc.).

[0102] In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) can be greater than or equal to about 7:1, greater than or equal to about 7.3:1, greater than or equal to about 7.5:1, greater than or equal to about 8:1, greater than or equal to about 8.5:1, greater than or equal to about 9:1, greater than or equal to about 9.5:1, greater than or equal to about 10:1, greater than or equal to about 10.5:1, greater than or equal to about 11:1, greater than or equal to about 12:1, greater than or equal to about 13:1, greater than or equal to about 14:1, greater than or equal to about 15:1, greater than or equal to about 15.5:1, greater than or equal to about 16:1, greater than or equal to about 16.5:1, greater than or equal to about 17:1, greater than or equal to about 17.5:1, greater than or equal to about 18:1, greater than or equal to about 18.5:1, greater than or equal to about 19:1, greater than or equal to about 19.5:1, or greater than or equal to about 20:1. In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) can be less than or equal to about 40:1, less than or equal to about 38:1, less than or equal to about 37:1, less than or equal to about 36:1, less than or equal to about 35:1, less than or equal to about 34:1, less than or equal to about 33:1, less than or equal to about 32:1, less than or equal to about 31:1, less than or equal to about 30:1, less than or equal to about 29:1, less than or equal to about 28:1, less than or equal to about 27:1, less than or equal to about 26:1, less than or equal to about 25:1, less than or equal to about 24:1, less than or equal to about 23:1, less than or equal to about 22:1, less than or equal to about 21:1, less than or equal to about 20.3:1 or less than or equal to about 19.4:1.

[0103] In semiconductor nanoparticles, the molar ratio of silver to indium (Ag:In) can be greater than or equal to about 4.9:1, greater than or equal to about 5:1, greater than or equal to about 5.05:1, greater than or equal to about 5.1:1, greater than or equal to about 5.2:1, greater than or equal to about 5.5:1, greater than or equal to about 5.7:1, greater than or equal to about 5.9:1, greater than or equal to about 6:1, greater than or equal to about 6.5:1, greater than or equal to about 7:1, greater than or equal to about 7.5:1, greater than or equal to about 8:1, greater than or equal to about 8.5:1, greater than or equal to about 9:1, greater than or equal to about 9.5:1, greater than or equal to about 10:1, greater than or equal to about 10.5:1, greater than or equal to about 11:1, greater than or equal to about 11.5:1, greater than or equal to about 12:1, greater than or equal to about 12.5:1, greater than or equal to about 13:1, greater than or equal to about 13.5:1, greater than or equal to about 14:1, greater than or equal to about 14.5:1, greater than or equal to about 15:1, greater than or equal to about 15.5:1, greater than or equal to about 16:1, greater than or equal to about 16.5:1, greater than or equal to about 17:1, greater than or equal to about 17.5:1, greater than or equal to about 18:1, greater than or equal to about 18.5:1, greater than or equal to about 19:1, greater than or equal to about 19.5:1 or greater than or equal to about 20:1. In semiconductor nanoparticles, the molar ratio of silver to indium (Ag:In) can be less than or equal to about 30:1, less than or equal to about 29.5:1, less than or equal to about 29:1, less than or equal to about 28:1, less than or equal to about 27:1, less than or equal to about 26:1, less than or equal to about 25:1, less than or equal to about 24:1, less than or equal to about 23:1, less than or equal to about 22:1, less than or equal to about 21:1, less than or equal to about 20:1, less than or equal to about 19.4:1, less than or equal to about 18.2:1, less than or equal to about 17.3:1, less than or equal to about 17:1, less than or equal to about 16.2:1, less than or equal to about 15.7:1, less than or equal to about 14.4:1, less than or equal to about 12.2:1, less than or equal to about 12:1, less than or equal to about 11.9:1, less than or equal to about 11.5:1, less than or equal to about 11.2:1, less than or equal to about 10.5:1 or less than or equal to about 10.3:1.

[0104] In the semiconductor nanoparticles, the molar ratio of gallium to silver (Ga:Ag) can be: greater than or equal to about 1:1, greater than or equal to about 1.1:1, greater than or equal to about 1.15:1, greater than or equal to about 1.2:1, greater than or equal to about 1.22:1, greater than or equal to about 1.29:1, greater than or equal to about 1.3:1, greater than or equal to about 1.33:1, greater than or equal to about 1.34:1, greater than or equal to about 1.36:1, greater than or equal to about 1.4:1, greater than or equal to about 1.46:1, greater than or equal to about 1.30:1, greater than or equal to about 1.40:1, greater than or equal to about 1.46:1, greater than or equal to about 1.48:1, greater than or equal to about 1.5:1, greater than or equal to about 1.54:1, greater than or equal to about 1.6:1 or greater than or equal to about 1.65:1; less than or equal to about 3:1, less than or equal to about 2.9:1, less than or equal to about 2.8:1, less than or equal to about 2.75:1, less than or equal to about 2.5:1, less than or equal to about 2.2:1, less than or equal to about 2:1, less than or equal to about 1.9:1, less than or equal to about 1.8:1, less than or equal to about 1.75:1, less than or equal to about 1.7:1, less than or equal to about 1.65:1, less than or equal to about 1.6:1, less than or equal to about 1.58:1, less than or equal to about 1.55:1, less than or equal to about 1.5:1, less than or equal to about 1.45:1, less than or equal to about 1.4:1 or less than or equal to about 1.35:1; or a combination thereof.

[0105] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to silver [(In + Ga):Ag] can be: greater than or equal to about 1.2:1, greater than or equal to about 1.3:1, greater than or equal to about 1.4:1, greater than or equal to about 1.41:1, greater than or equal to about 1.43:1, greater than or equal to about 1.45:1, greater than or equal to about 1.46:1, greater than or equal to about 1.48:1, greater than or equal to about 1.5:1, greater than or equal to about 1.63:1, greater than or equal to about 1.7:1, greater than or equal to about 1.83:1, greater than or equal to about 1.9:1, greater than or equal to about 1.94:1 or greater than or equal to about 2:1; less than or equal to about 3.5:1, less than or equal to about 3:1, less than or equal to about 2.4:1, less than or equal to about 2.37:1, less than or equal to about 2:1, less than or equal to about 1.96:1, less than or equal to about 1.95:1, less than or equal to about 1.9:1, or less than or equal to about 1.65:1; or a combination thereof.

[0106] In the semiconductor nanoparticles, the molar ratio of indium to sulfur (In:S) can be greater than or equal to about 0.005:1, greater than or equal to about 0.01:1, greater than or equal to about 0.015:1, greater than or equal to about 0.019:1, greater than or equal to about 0.02:1, greater than or equal to about 0.025:1, greater than or equal to about 0.029:1, greater than or equal to about 0.03:1, greater than or equal to about 0.035:1, greater than or equal to about 0.04:1, greater than or equal to about 0.045:1, greater than or equal to about 0.05:1, greater than or equal to about 0.055:1, greater than or equal to about 0.06:1, greater than or equal to about 0.065:1 or greater than or equal to about 0.07:1. In the semiconductor nanoparticles, the molar ratio of indium to sulfur (In:S) can be less than or equal to about 0.13:1, less than or equal to about 0.11:1, less than or equal to about 0.105:1, less than or equal to about 0.1:1, less than or equal to about 0.09:1, less than or equal to about 0.085:1, less than or equal to about 0.08:1, less than or equal to about 0.075:1, less than or equal to about 0.072:1, less than or equal to about 0.069:1, less than or equal to about 0.064:1, less than or equal to about 0.061:1. Less than or equal to about 0.058:1, less than or equal to about 0.054:1, less than or equal to about 0.052:1, less than or equal to about 0.049:1, less than or equal to about 0.045:1, less than or equal to about 0.042:1, less than or equal to about 0.038:1, less than or equal to about 0.035:1 or less than or equal to about 0.032:1.

[0107] In the semiconductor nanoparticles, the molar ratio of gallium to sulfur (Ga:S) can be greater than or equal to about 0.3:1, greater than or equal to about 0.35:1, greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.48:1, greater than or equal to about 0.49:1, greater than or equal to about 0.51:1, greater than or equal to about 0.52:1, greater than or equal to about 0.53:1, greater than or equal to about 0.54:1, greater than or equal to about 0.55:1, greater than or equal to about 0.56:1, greater than or equal to about 0.57:1, greater than or equal to about 0.58:1, greater than or equal to about 0.59:1, greater than or equal to about 0.6:1, greater than or equal to about 0.63:1, greater than or equal to about 0.65:1, greater than or equal to about 0.67:1, greater than or equal to about 0.69:1, greater than or equal to about 0.7:1 or greater than or equal to about 0.72:1. In the semiconductor nanoparticles, the molar ratio of gallium to sulfur (Ga:S) can be less than or equal to about 1:1, less than or equal to about 0.95:1, less than or equal to about 0.9:1, less than or equal to about 0.85:1, less than or equal to about 0.8:1, less than or equal to about 0.79:1, less than or equal to about 0.75:1, less than or equal to about 0.77:1, less than or equal to about 0.73:1, less than or equal to about 0.71:1, less than or equal to about 0.7:1, less than or equal to about 0.69:1, less than or equal to about 0.68:1, less than or equal to about 0.65:1, less than or equal to about 0.64:1, less than or equal to about 0.61:1, less than or equal to about 0.6:1, less than or equal to about 0.56:1, less than or equal to about 0.55:1, less than or equal to about 0.54:1, less than or equal to about 0.52:1 or less than or equal to about 0.5:1.

[0108] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to sulfur [(In + Ga):S] can be: greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.5:1, greater than or equal to about 0.52:1, greater than or equal to about 0.53:1, greater than or equal to about 0.54:1, greater than or equal to about 0.55:1, greater than or equal to about 0.57:1, greater than or equal to about 0.58:1, greater than or equal to about 0.59:1, greater than or equal to about 0.6:1, greater than or equal to about 0.62:1, greater than or equal to about 0.64:1, greater than or equal to about 0.68:1, greater than or equal to about 0.7:1, greater than or equal to about 0.72:1, greater than or equal to about 0.75:1, greater than or equal to about 0.77:1, greater than or equal to about 0.79:1 or greater than or equal to about 0.81:1; less than or equal to about 0.9:1, less than or equal to about 0.88:1, less than or equal to about 0.86:1, less than or equal to about 0.84:1, less than or equal to about 0.82:1, less than or equal to about 0.78:1, less than or equal to about 0.73:1, less than or equal to about 0.71:1, less than or equal to about 0.69:1 or less than or equal to about 0.67:1; or a combination thereof.

[0109] In the semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) can be: greater than or equal to about 0.33:1, greater than or equal to about 0.35:1, greater than or equal to about 0.38:1, greater than or equal to about 0.39:1, greater than or equal to about 0.4:1 or greater than or equal to about 0.41:1; less than or equal to about 0.5:1, less than or equal to about 0.45:1, less than or equal to about 0.44:1, less than or equal to about 0.43:1, less than or equal to about 0.42:1, less than or equal to about 0.41:1, less than or equal to about 0.4:1, less than or equal to about 0.39:1, less than or equal to about 0.37:1, less than or equal to about 0.36:1 or less than or equal to about 0.33:1; or a combination thereof.

[0110] In semiconductor nanoparticles, the molar ratio of sulfur to indium (S:In) can be: greater than or equal to about 9:1, greater than or equal to about 10:1, greater than or equal to about 11:1, greater than or equal to about 12:1, greater than or equal to about 13:1, greater than or equal to about 14:1, greater than or equal to about 15:1, greater than or equal to about 16:1, greater than or equal to about 17:1, greater than or equal to about 18:1, greater than or equal to about 19:1, greater than or equal to about 20:1, greater than or equal to about 21:1, greater than or equal to about 22:1, greater than or equal to about 23:1, greater than or equal to about 24:1, greater than or equal to about 25:1, greater than or equal to about 26:1, greater than or equal to about 27:1, greater than or equal to about 28:1, greater than or equal to about 29:1, or greater than or equal to about 30:1; less than or equal to about 48:1, less than or equal to about 45:1, less than or equal to about 42:1, less than or equal to about 41:1, less than or equal to about 40:1, less than or equal to about 39:1, less than or equal to about 38:1, less than or equal to about 37:1, less than or equal to about 36:1, less than or equal to about 35:1, less than or equal to about 34:1, or less than or equal to about 32:1; or a combination thereof.

[0111] In semiconductor nanoparticles, the molar ratio of silver to the sum of silver, indium, and gallium [Ag:(Ag + In + Ga)] can be: greater than or equal to about 0.31:1, greater than or equal to about 0.33:1, greater than or equal to about 0.34:1, greater than or equal to about 0.35:1, greater than or equal to about 0.37:1, greater than or equal to about 0.38:1, greater than or equal to about 0.39:1, greater than or equal to about 0.4:1, greater than or equal to about 0.41:1, greater than or equal to about 0.43:1, or greater than or equal to about 0.44:1; less than or equal to about 0.45:1, less than or equal to about 0.42:1, less than or equal to about 0.40:1, less than or equal to about 0.36:1, less than or equal to about 0.33:1, less than or equal to about 0.32:1, or less than or equal to about 0.28:1; or a combination thereof.

[0112] In the semiconductor nanoparticles, the molar ratio of gallium to the sum of gallium, indium and silver [Ga:(Ga+In+Ag)] can be: greater than or equal to about 0.45:1, greater than or equal to about 0.46:1, greater than or equal to about 0.47:1, greater than or equal to about 0.48:1, greater than or equal to about 0.49:1, greater than or equal to about 0.5:1, greater than or equal to about 0.51:1, greater than or equal to about 0.52:1, greater than or equal to about 0.53:1, greater than or equal to about 0.55:1, greater than or equal to about 0.58:1, greater than or equal to about 0.59:1, greater than or equal to about 0.6:1, greater than or equal to about 0.61:1, greater than or equal to about 0.63:1, greater than or equal to about 0.64:1 or greater than or equal to about 0.65:1; less than or equal to about 0.85:1, less than or equal to about 0.8:1, less than or equal to about 0.77:1, less than or equal to about 0.74:1, less than or equal to about 0.73:1, less than or equal to about 0.72:1, less than or equal to about 0.71:1, less than or equal to about 0.69:1, less than or equal to about 0.65:1, less than or equal to about 0.64:1, less than or equal to about 0.62:1, less than or equal to about 0.61:1, less than or equal to about 0.59:1, less than or equal to about 0.56:1, less than or equal to about 0.54:1, less than or equal to about 0.53:1, less than or equal to about 0.49:1 or less than or equal to about 0.485:1; or a combination thereof.

[0113] In the semiconductor nanoparticles, the molar ratio of sulfur to the sum of gallium, indium and silver [S:(Ag+In+Ga)] can be: greater than or equal to about 0.8:1, greater than or equal to about 0.92:1, greater than or equal to about 1:1, greater than or equal to about 1.05:1, greater than or equal to about 1.12:1 or greater than or equal to about 1.3:1; less than or equal to about 1.5:1, less than or equal to about 1.45:1, less than or equal to about 1.35:1, less than or equal to about 1.15:1, less than or equal to about 1.13:1, less than or equal to about 1.12:1, less than or equal to about 1.1:1, less than or equal to about 1.09:1, less than or equal to about 1.08:1 or less than or equal to about 1.06:1; or a combination thereof.

[0114] In an embodiment, the semiconductor nanoparticles can have a charge balance value defined by the following equation (Equation 1), which can be greater than or equal to about 0.95, greater than or equal to about 0.98 or greater than or equal to about 1, and / or can be less than or equal to about 1.35, less than or equal to about 1.3, less than or equal to about 1.25, less than or equal to about 1.2 or less than or equal to about 1.1: Equation 1 Charge balance value = {[Ag] + 3([In] + [Ga]) + 2[Zn]} / (2[S]) Wherein, in Equation 1, [Ag], [In], [Ga], [Zn], and [S] are the molar amounts of silver, indium, gallium, zinc, and sulfur in the semiconductor nanoparticles, respectively.

[0115] The semiconductor nanoparticles may also include bromine. In the semiconductor nanoparticles, based on indium, the amount of bromine may be less than or equal to about 3200 mol% (Br:In ~ 32 times). In the semiconductor nanoparticles, based on indium (e.g., relative to indium or per 1 mole of indium), the amount of bromine may be greater than or equal to about 0.01 mol% (e.g., greater than or equal to about 0.0001 mol), greater than or equal to about 0.03 mol%, greater than or equal to about 0.05 mol%, greater than or equal to about 0.08 mol%, greater than or equal to about 0.1 mol%, greater than or equal to about 0.15 mol%, greater than or equal to about 0.25 mol%, greater than or equal to about 0.3 mol%, greater than or equal to about 0.35 mol%, greater than or equal to about 0.4 mol%, greater than or equal to about 0.45 mol%, greater than or equal to about 0.5 mol%, greater than or equal to about 0.6 mol%, greater than or equal to about 0.7 mol%, greater than or equal to about 0.8 mol%, greater than or equal to about 0.9 mol%, greater than or equal to about 1 mol%, greater than or equal to about 1.5 mol%, greater than or equal to about 2 mol%, greater than or equal to about 2.5 mol%, greater than or equal to about 3 mol%, greater than or equal to about 3.5 mol%, greater than or equal to about 4 mol%, greater than or equal to about 4.5 mol%, greater than or equal to about 5 mol%, greater than or equal to about 5.5 mol%, greater than or equal to about 6 mol%, greater than or equal to about 6.5 mol%, greater than or equal to about 7 mol%, greater than or equal to about 7.5 mol%, greater than or equal to about 8 mol%, greater than or equal to about 8.5 mol%, greater than or equal to about 9 mol%, greater than or equal to about 10 mol%, greater than or equal to about 13 mol%, greater than or equal to about 15 mol%, greater than or equal to about 17 mol%, greater than or equal to about 20 mol%, greater than or equal to about 25 mol%, greater than or equal to about 30 mol%, greater than or equal to about 35 mol%, greater than or equal to about 40 mol%, greater than or equal to about 45 mol%, greater than or equal to about 50 mol%, greater than or equal to about 60 mol%, greater than or equal to about 70 mol%, greater than or equal to about 80 mol%, greater than or equal to about 90 mol%, greater than or equal to about 100 mol%, greater than or equal to about 150 mol%, greater than or equal to about 200 mol%, greater than or equal to about 250 mol%, greater than or equal to about 300 mol%, greater than or equal to about 350 mol%, greater than or equal to about 400 mol% or greater than or equal to about 450 mol%.Based on indium (e.g., relative to indium or per 1 mole of indium), the amount of bromine can be less than or equal to about 3200 mol% (e.g., less than or equal to about 32 moles) (Br:In ~ 32 times), less than or equal to about 3000 mol%, less than or equal to about 2500 mol%, less than or equal to about 2000 mol%, less than or equal to about 1500 mol%, less than or equal to about 1000 mol%, less than or equal to about 900 mol%, less than or equal to about 800 mol%, less than or equal to about 700 mol%, less than or equal to about 600 mol%, less than or equal to about 500 mol%, less than or equal to about 380 mol%, less than or equal to about 230 mol%, less than or equal to about 120 mol%, less than or equal to about 110 mol%, less than or equal to about 100 mol%, less than or equal to about 85 mol%, less than or equal to about 75 mol%, less than or equal to about 65 mol%, less than or equal to about 55 mol%, less than or equal to about 44 mol%, less than or equal to about 42 mol%, less than or equal to about 37 mol%, less than or equal to about 23 mol%, less than or equal to about 19 mol%, less than or equal to about 14 mol%, less than or equal to about 7.2 mol%, less than or equal to about 6.8 mol%, less than or equal to about 4.3 mol%, less than or equal to about 3.9 mol%, or less than or equal to about 2.3 mol%.

[0116] The size or average size of the first semiconductor nanocrystal or core (hereinafter, may be simply referred to as "size") can be greater than or equal to about 0.5 nm, greater than or equal to about 1 nm, greater than or equal to about 1.5 nm, greater than or equal to about 1.7 nm, greater than or equal to about 1.9 nm, greater than or equal to about 2 nm, greater than or equal to about 2.1 nm, greater than or equal to about 2.3 nm, greater than or equal to about 2.5 nm, greater than or equal to about 2.7 nm, greater than or equal to about 2.9 nm, greater than or equal to about 3 nm, greater than or equal to about 3.1 nm, greater than or equal to about 3.3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 3.7 nm, or greater than or equal to about 3.9 nm. The size of the first semiconductor nanocrystal or core can be less than or equal to about 5 nm, less than or equal to about 4.5 nm, less than or equal to about 4 nm, less than or equal to about 3.5 nm, less than or equal to about 3 nm, less than or equal to about 2.5 nm, less than or equal to about 2 nm, or less than or equal to about 1.5 nm.

[0117] The thickness of the second semiconductor nanocrystal or the layer comprising the second semiconductor nanocrystal (e.g., shell thickness) can be greater than or equal to about 0.1 nm, or greater than or equal to about 0.2 nm, or greater than or equal to about 0.3 nm. The thickness of the second semiconductor nanocrystal or the layer comprising the second semiconductor nanocrystal (e.g., shell thickness) can be less than or equal to about 4 nm, less than or equal to about 3.5 nm, less than or equal to about 3 nm, less than or equal to about 2.5 nm, less than or equal to about 2 nm, less than or equal to about 1.5 nm, less than or equal to about 1 nm, or less than or equal to about 0.8 nm.

[0118] If present, the size (e.g., thickness) of the third semiconductor nanocrystal and / or the fourth semiconductor nanocrystal or the layer comprising the third semiconductor nanocrystal and / or the fourth semiconductor nanocrystal (thickness of the additional shell layer) can be greater than or equal to about 0.1 nm, greater than or equal to about 0.3 nm, greater than or equal to about 0.5 nm, greater than or equal to about 0.7 nm, or greater than or equal to about 1 nm. The size (e.g., thickness) of the third semiconductor nanocrystal can be less than or equal to about 2 nm, less than or equal to about 1.5 nm, less than or equal to about 1 nm, or less than or equal to about 0.8 nm. The thickness of the third semiconductor nanocrystal layer can be in the range of about 0.1 nm to about 5 nm, about 0.2 nm to about 4 nm, about 0.3 nm to about 3.5 nm, about 0.4 nm to about 3 nm, about 0.5 nm to about 2.5 nm, about 0.6 nm to about 2 nm, about 0.7 nm to about 1.5 nm, about 0.8 nm to about 1.2 nm, about 0.9 nm to about 1 nm or combinations thereof.

[0119] In an embodiment, the size (or average size, hereinafter simply referred to as "size") of the semiconductor nanoparticles may be greater than or equal to about 1 nm, greater than or equal to about 1.5 nm, greater than or equal to about 2 nm, greater than or equal to about 2.5 nm, greater than or equal to about 3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 4 nm, greater than or equal to about 4.5 nm, greater than or equal to about 5 nm, greater than or equal to about 5.5 nm, greater than or equal to about 6 nm, greater than or equal to about 6.5 nm, greater than or equal to about 7 nm, greater than or equal to about 7.5 nm, greater than or equal to about 8 nm, greater than or equal to about 8.5 nm, greater than or equal to about 9 nm, greater than or equal to about 9.5 nm, greater than or equal to about 10 nm, or greater than or equal to about 10.5 nm. The size of the semiconductor nanoparticles may be less than or equal to about 50 nm, less than or equal to about 48 nm, less than or equal to about 46 nm, less than or equal to about 44 nm, less than or equal to about 42 nm, less than or equal to about 40 nm, less than or equal to about 35 nm, less than or equal to about 30 nm, less than or equal to about 25 nm, less than or equal to about 20 nm, less than or equal to about 18 nm, less than or equal to about 16 nm, less than or equal to about 14 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 6 nm, or less than or equal to about 4 nm.

[0120] In this specification, the size of the semiconductor nanoparticles may be the particle diameter (particle size) (e.g., equivalent diameter (equivalent particle size)). The size of the semiconductor nanoparticles may be obtained from an image confirmed by an electron microscope (e.g., transmission electron microscope). The size of the semiconductor nanoparticles may be an equivalent diameter obtained by a calculation involving converting a two-dimensional area of the particles obtained from the electron microscope image into a circle. The particle size (particle diameter) may be reproducibly and easily obtained from the microscope image using various image processing programs (e.g., ImageJ or an in-house program created using a coding language). The particle size (particle diameter) may be a value calculated from the composition and emission peak wavelength of the semiconductor nanoparticles (e.g., nominal particle size (nominal particle diameter)).

[0121] The semiconductor nanoparticles may have a size or average size greater than or equal to about 5 nm, greater than or equal to about 5.1 nm, or greater than or equal to about 5.2 nm and less than or equal to about 10 nm, less than or equal to about 7 nm, less than or equal to about 6.5 nm, less than or equal to about 6 nm, or less than or equal to about 5.4 nm. The semiconductor nanoparticles (population) may exhibit a size distribution represented by a standard deviation that is less than or equal to about 20%, less than or equal to about 19%, less than or equal to about 18%, less than or equal to about 17%, less than or equal to about 16%, less than or equal to about 15%, less than or equal to about 14%, less than or equal to about 13%, less than or equal to about 12%, less than or equal to about 11%, or less than or equal to about 10% of the average size. The standard deviation may be greater than or equal to about 5%, greater than or equal to about 10%, or greater than or equal to about 12%.

[0122] The semiconductor particles may be configured to emit green light. The peak emission wavelength of the green light may be in the range of greater than or equal to about 500 nm or greater than or equal to about 505 nm and less than or equal to about 580 nm or less than or equal to about 550 nm.

[0123] The semiconductor nanoparticles of the examples may be configured to emit green light. The peak emission wavelength of the light or the peak emission wavelength of the semiconductor nanoparticles in the emission spectrum may be greater than or equal to about 500 nm, greater than or equal to about 505 nm, greater than or equal to about 510 nm, greater than or equal to about 515 nm, greater than or equal to about 520 nm, greater than or equal to about 525 nm, greater than or equal to about 530 nm, greater than or equal to about 535 nm, greater than or equal to about 540 nm, greater than or equal to about 545 nm, greater than or equal to about 550 nm, greater than or equal to about 555 nm, greater than or equal to about 560 nm, greater than or equal to about 565 nm, greater than or equal to about 570 nm, greater than or equal to about 575 nm, greater than or equal to about 580 nm, greater than or equal to about 585 nm, greater than or equal to about 590 nm, or greater than or equal to about 600 nm. The peak emission wavelength of the light or the peak emission wavelength of the semiconductor nanoparticles in the emission spectrum may be less than or equal to about 580 nm or less than or equal to about 550 nm.

[0124] The semiconductor nanoparticles of the examples may be configured to emit red light. The peak emission wavelength of the light or the peak emission wavelength of the semiconductor nanoparticles in the emission spectrum may be greater than or equal to about 600 nm, greater than or equal to about 605 nm, or greater than or equal to about 610 nm and less than or equal to about 650 nm, less than or equal to about 640 nm, or less than or equal to about 630 nm.

[0125] Semiconductor nanoparticles can exhibit a quantum yield greater than or equal to about 50%. The quantum yield can be an absolute quantum yield. The quantum yield can be greater than or equal to about 40%, greater than or equal to about 45%, greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, greater than or equal to about 70%, greater than or equal to about 75%, greater than or equal to about 80%, greater than or equal to about 85%, greater than or equal to about 90%, or greater than or equal to about 95%. The quantum yield can be less than or equal to about 100%, less than or equal to about 99.5%, less than or equal to about 99%, less than or equal to about 98%, or less than or equal to about 97%.

[0126] Semiconductor nanoparticles can be configured to emit light (e.g., green or red light). The full width at half maximum (FWHM) of the peak of the light or the FWHM of the peak in the emission spectrum of the semiconductor nanoparticles can be greater than or equal to about 5 nm, greater than or equal to about 10 nm, greater than or equal to about 15 nm, greater than or equal to about 20 nm, greater than or equal to about 25 nm, or greater than or equal to about 30 nm. The full width at half maximum can be less than or equal to about 70 nm, less than or equal to about 65 nm, less than or equal to about 60 nm, less than or equal to about 55 nm, less than or equal to about 50 nm, less than or equal to about 45 nm, less than or equal to about 40 nm, less than or equal to about 38 nm, less than or equal to about 36 nm, less than or equal to about 35 nm, less than or equal to about 34 nm, less than or equal to about 33 nm, less than or equal to about 32 nm, less than or equal to about 31 nm, less than or equal to about 30 nm, less than or equal to about 29 nm, less than or equal to about 28 nm, less than or equal to about 27 nm, less than or equal to about 26 nm, or less than or equal to about 25 nm.

[0127] Semiconductor nanoparticles can exhibit a ratio of the absorbance at 350 nm to the absorbance at 370 nm less than or equal to about 1.2, or less than or equal to about 1.1, or less than or equal to about 1 in UV-Vis absorption spectroscopy. Semiconductor nanoparticles can exhibit a ratio of the absorbance at 350 nm to the absorbance at 370 nm greater than or equal to about 0.1 or greater than or equal to about 0.3 in UV-Vis absorption spectroscopy.

[0128] The shape of the semiconductor nanoparticles is not particularly limited and can include, for example, spherical, polyhedral, pyramidal, multi-armed, cubic, nanotubes, nanowires, nanofibers, nanosheets, or combinations thereof, but is not limited thereto.

[0129] Semiconductor nanoparticles can include organic ligands and / or organic solvents on their surfaces. In one embodiment, the organic ligands and / or organic solvents can be bound to the surface of the semiconductor nanoparticles. The organic ligands and organic solvents are as described herein.

[0130] The embodiments relate to a method for preparing semiconductor nanoparticles. In an embodiment, the method for preparing semiconductor nanoparticles may include contacting a sulfur precursor, a first semiconductor nanocrystal comprising silver, a group 13 element, and a chalcogen element, and a gallium precursor in a medium comprising an organic solvent. The method of the embodiment may include adding an organic ligand, a sulfur precursor, a first semiconductor nanocrystal comprising silver, a group 13 element, and a chalcogen element, and a gallium precursor to a medium comprising an organic solvent. The method may include adding the first semiconductor nanocrystal and the gallium precursor to a medium comprising an organic solvent, a sulfur precursor, and an organic ligand.

[0131] The method of the embodiment may include heating the medium to a predetermined temperature (or reaction temperature). In an embodiment, the gallium precursor may include gallium halide, and the gallium halide may include gallium bromide. The method may further include adding a silver compound to the medium. Heating may cause a reaction to produce semiconductor nanoparticles or a crude solution comprising semiconductor nanoparticles. The predetermined temperature may be greater than or equal to about 120 °C and less than or equal to about 380 °C. The predetermined temperature may be the reaction temperature. The predetermined temperature or the reaction temperature may be greater than or equal to about 220 °C or greater than or equal to about 260 °C and less than or equal to about 340 °C, less than or equal to about 320 °C, or less than or equal to about 280 °C.

[0132] The gallium precursor or the gallium halide may include gallium bromide. The gallium precursor or the gallium halide may further include gallium chloride. In the gallium precursor, relative to 1 mol of gallium bromide, the amount of gallium chloride may be greater than or equal to about 0 mol, greater than or equal to about 0.005 mol, greater than or equal to about 0.01 mol, greater than or equal to about 0.05 mol, greater than or equal to about 0.1 mol, greater than or equal to about 0.15 mol, greater than or equal to about 0.2 mol, greater than or equal to about 0.25 mol, greater than or equal to about 0.3 mol, or greater than or equal to about 0.35 mol. In the gallium precursor, relative to 1 mol of gallium bromide, the amount of gallium chloride may be less than or equal to about 1 mol, less than or equal to about 0.7 mol, less than or equal to about 0.5 mol, less than or equal to about 0.4 mol, less than or equal to about 0.35 mol, less than or equal to about 0.34 mol, less than or equal to about 0.3 mol, or less than or equal to about 0.2 mol.

[0133] AIGS-containing semiconductor nanoparticles can exhibit desired optical properties (e.g., relatively high absorption) for applications in the color conversion layer of semiconductor nanoparticles. There is room for improvement in the stability (such as process stability) of such AIGS-containing semiconductor nanoparticles. Surprisingly, the inventors have found that the methods of the examples can provide the semiconductor nanoparticles described herein, which exhibit the atomic molar ratios described herein (e.g., the molar ratio of gallium to indium and the molar ratio of silver to indium), which can contribute to the semiconductor nanoparticles exhibiting a desired level of stability and properties (e.g., increased light conversion efficiency and / or controlled or suppressed trap emission) within the composite or its pattern.

[0134] Without wishing to be bound by any particular theory, it is believed that in the methods of the examples, using gallium bromide as the gallium precursor (and optionally, adding a silver compound as described herein) can contribute to controlling the composition of the final semiconductor nanoparticles as described herein (e.g., using GaBr3 can suppress the trap ratio by removing excess Ag from the surface). Thus, the resulting final nanoparticles can exhibit enhanced stability and suppressed trap ratio compared to semiconductor nanoparticles prepared by conventional techniques. Without wishing to be bound by any particular theory, it is believed that compared to other halides (e.g., precursors containing iodide or chloride), gallium precursors containing bromide can provide a better balance between the metal components (e.g., silver, gallium, and indium) on the surface of the formed semiconductor nanoparticles.

[0135] The methods of the examples can include adding a sulfur precursor to a medium (e.g., a medium containing an organic solvent and an optional organic ligand). The medium can be vacuum treated as described herein. In an example, the method can include adding gallium bromide to the medium. In an example, the method can include adding a first semiconductor nanocrystal containing silver, a Group 13 element, and a chalcogen element to the medium. In the methods of the examples, gallium bromide can be added before or after adding the first semiconductor nanocrystal. The method can further include heating the medium (e.g., a medium containing the sulfur precursor, gallium bromide, the first semiconductor nanocrystal, or a combination thereof) to a predetermined temperature (e.g., the reaction temperature or below the reaction temperature). The method can further include adding a silver compound to the medium. The method can further include promoting the precipitation of the semiconductor nanoparticles formed in the medium (e.g., coordinated with the organic ligand) by adding a poor solvent to the resulting reaction solution (the reaction solution obtained by cooling it after heating).

[0136] In an embodiment, the formation of the semiconductor nanoparticles can include reacting a gallium precursor with a sulfur precursor in the presence of a first semiconductor nanocrystal comprising silver, a group 13 element, and a chalcogen element. The medium can be a reaction medium for the reaction. The method can further include adding a silver compound to the medium. Details regarding the semiconductor nanoparticles and the first semiconductor nanocrystal are the same as those described herein.

[0137] The method can include pretreating the medium.

[0138] In an embodiment, the method can include adding the first semiconductor nanocrystal, the gallium precursor, the sulfur precursor, or both the gallium precursor and the sulfur precursor to a (reaction) medium comprising an organic solvent (and optionally a sulfur precursor). Before adding the first semiconductor nanocrystal and / or the gallium precursor, the medium (e.g., the medium comprising a sulfur precursor) can be pretreated under vacuum at a predetermined temperature. The pretreatment temperature can be lower than the reaction temperature. The pretreatment temperature can be, for example, greater than or equal to about 80 °C, greater than or equal to about 100 °C, or greater than or equal to about 120 °C and less than or equal to about 200 °C or less than or equal to about 180 °C.

[0139] In an embodiment, the manner (e.g., the order or form of addition) of adding the first semiconductor nanocrystal, the gallium precursor, and the sulfur precursor is not particularly limited. The first semiconductor nanocrystal can be dispersed in a suitable organic solvent and added to the reaction medium, but is not limited thereto. The gallium precursor can be dispersed in a suitable organic solvent (e.g., octadecene, an aliphatic or aromatic phosphine compound such as TOP, or an aliphatic or aromatic phosphine oxide compound such as TOPO) and added to the reaction medium, but is not limited thereto.

[0140] The manner (e.g., the order or form of addition) of adding the silver compound to the (reaction) medium is also not particularly limited. The silver compound can be added in a dissolved state to a suitable organic solvent (e.g., the organic solvents described herein, such as an amine solvent (e.g., oleylamine), a phosphine solvent (e.g., trioctylphosphine)). The timing of adding the silver compound is also not particularly limited and can be appropriately selected. The silver compound can be added to the (reaction) medium before or after adding the first semiconductor nanocrystal, the gallium precursor, the sulfur precursor, or a combination thereof. In an embodiment, the silver compound can be added to the (reaction) medium after pretreatment.

[0141] Details of the first semiconductor nanocrystal are the same as those described herein. The first semiconductor nanocrystal may include silver (Ag), indium, gallium, and sulfur. The method for preparing the first semiconductor nanocrystal is not particularly limited and may be appropriately selected. In an embodiment, the first semiconductor nanocrystal may be obtained by contacting (or reacting) necessary precursors according to the composition (such as a silver precursor, an indium precursor, a gallium precursor, and a sulfur precursor) in a solution containing an organic ligand and an organic solvent at a predetermined nucleation reaction temperature (for example, a nucleation reaction temperature of about 180 °C to about 300 °C or about 200 °C to about 280 °C), and then separating them.

[0142] In an embodiment, the prepared first semiconductor nanocrystal may be separated and optionally washed. Separation and washing may be performed in the manner described herein.

[0143] In the method of the embodiment, the predetermined temperature (for example, the first temperature or the second temperature) may be greater than or equal to about 120 °C, greater than or equal to about 180 °C, greater than or equal to about 190 °C, greater than or equal to about 200 °C, greater than or equal to about 205 °C, greater than or equal to about 210 °C, greater than or equal to about 240 °C, greater than or equal to about 245 °C, greater than or equal to about 250 °C, greater than or equal to about 255 °C, greater than or equal to about 260 °C, greater than or equal to about 265 °C, greater than or equal to about 270 °C, greater than or equal to about 275 °C, greater than or equal to about 280 °C, greater than or equal to about 285 °C, greater than or equal to about 290 °C, greater than or equal to about 295 °C, greater than or equal to about 300 °C, greater than or equal to about 305 °C, greater than or equal to about 310 °C, greater than or equal to about 315 °C, greater than or equal to about 320 °C, greater than or equal to about 330 °C, greater than or equal to about 335 °C, greater than or equal to about 340 °C, or greater than or equal to about 345 °C. The predetermined temperature may be less than or equal to about 380 °C, less than or equal to about 375 °C, less than or equal to about 370 °C, less than or equal to about 365 °C, less than or equal to about 360 °C, less than or equal to about 355 °C, less than or equal to about 350 °C, less than or equal to about 340 °C, less than or equal to about 330 °C, less than or equal to about 320 °C, less than or equal to about 310 °C, less than or equal to about 300 °C, less than or equal to about 290 °C, less than or equal to about 280 °C, less than or equal to about 270 °C, less than or equal to about 260 °C, or less than or equal to about 250 °C.

[0144] In an embodiment, the method can include heating a medium (optionally a medium containing a sulfur precursor) to a first temperature under vacuum or an inert atmosphere, and adding a first semiconductor nanocrystal, a gallium precursor, a sulfur precursor, or a combination thereof to the heated medium at the first temperature. The method of the embodiment can include heating a reaction mixture containing the first semiconductor nanocrystal, the gallium precursor, the sulfur precursor, and an optional silver compound to a second temperature (e.g., a reaction temperature).

[0145] The first temperature can be greater than or equal to about 120 °C (e.g., greater than or equal to about 180 °C, greater than or equal to about 190 °C, or greater than or equal to about 200 °C) and less than or equal to about 280 °C (e.g., less than or equal to about 250 °C). The second temperature can be greater than or equal to about 190 °C, greater than or equal to about 240 °C, or greater than or equal to about 260 °C and less than or equal to about 380 °C, less than or equal to about 340 °C, less than or equal to about 320 °C, or less than or equal to about 280 °C).

[0146] The second temperature can be higher than the first temperature. The difference between the first temperature and the second temperature can be greater than or equal to about 5 °C, greater than or equal to about 10 °C, greater than or equal to about 15 °C, greater than or equal to about 20 °C, greater than or equal to about 30 °C, greater than or equal to about 40 °C, greater than or equal to about 50 °C, greater than or equal to about 60 °C, greater than or equal to about 70 °C, greater than or equal to about 80 °C, greater than or equal to about 90 °C, or greater than or equal to about 100 °C. The difference between the first temperature and the second temperature can be less than or equal to about 200 °C, less than or equal to about 190 °C, less than or equal to about 180 °C, less than or equal to about 170 °C, less than or equal to about 160 °C, less than or equal to about 150 °C, less than or equal to about 140 °C, less than or equal to about 130 °C, less than or equal to about 120 °C, less than or equal to about 110 °C, less than or equal to about 100 °C, less than or equal to about 90 °C, less than or equal to about 80 °C, less than or equal to about 70 °C, less than or equal to about 60 °C, less than or equal to about 50 °C, less than or equal to about 40 °C, less than or equal to about 30 °C, or less than or equal to about 20 °C).

[0147] The first temperature can be greater than or equal to about 120 °C, greater than or equal to about 190 °C, greater than or equal to about 200 °C, greater than or equal to about 210 °C, greater than or equal to about 220 °C, greater than or equal to about 230 °C, greater than or equal to about 240 °C, or greater than or equal to about 250 °C. The first temperature can be less than or equal to about 280 °C, less than or equal to about 275 °C, less than or equal to about 270 °C, less than or equal to about 265 °C, less than or equal to about 260 °C, less than or equal to about 255 °C, less than or equal to about 250 °C, less than or equal to about 240 °C, less than or equal to about 230 °C, less than or equal to about 220 °C, less than or equal to about 210 °C, less than or equal to about 200 °C, less than or equal to about 190 °C, less than or equal to about 180 °C, less than or equal to about I70 °C, less than or equal to about 160 °C, or less than or equal to about 150 °C.

[0148] In an embodiment, the second temperature (e.g., the reaction temperature) can be greater than or equal to about 210 °C, greater than or equal to about 220 °C, greater than or equal to about 230 °C, greater than or equal to about 240 °C, greater than or equal to about 245 °C, greater than or equal to about 250 °C, greater than or equal to about 255 °C, greater than or equal to about 260 °C, greater than or equal to about 265 °C, greater than or equal to about 270 °C, greater than or equal to about 275 °C, greater than or equal to about 280 °C, greater than or equal to about 285 °C, greater than or equal to about 290 °C, greater than or equal to about 295 °C, greater than or equal to about 300 °C, greater than or equal to about 305 °C, greater than or equal to about 310 °C, greater than or equal to about 315 °C, greater than or equal to about 320 °C, greater than or equal to about 330 °C, greater than or equal to about 335 °C, greater than or equal to about 340 °C, or greater than or equal to about 345 °C. The second temperature can be less than or equal to about 380 °C, less than or equal to about 375 °C, less than or equal to about 370 °C, less than or equal to about 365 °C, less than or equal to about 360 °C, less than or equal to about 355 °C, less than or equal to about 350 °C, less than or equal to about 340 °C, less than or equal to about 330 °C, less than or equal to about 320 °C, less than or equal to about 310 °C, less than or equal to about 300 °C, less than or equal to about 290 °C, less than or equal to about 280 °C, less than or equal to about 270 °C, less than or equal to about 260 °C, or less than or equal to about 250 °C.

[0149] The reaction time can be appropriately controlled taking into account the precursor and the reaction temperature. The reaction time can be greater than or equal to about 30 minutes, greater than or equal to about 35 minutes, greater than or equal to about 40 minutes, greater than or equal to about 45 minutes, greater than or equal to about 50 minutes, greater than or equal to about 55 minutes, greater than or equal to about 60 minutes, greater than or equal to about 65 minutes, greater than or equal to about 70 minutes, greater than or equal to about 75 minutes or greater than or equal to about 80 minutes. The reaction time can be less than or equal to about 10 hours, less than or equal to about 7 hours, less than or equal to about 5 hours, less than or equal to about 4 hours, less than or equal to about 3 hours, less than or equal to about 2 hours or less than or equal to about 90 minutes.

[0150] In an embodiment, adding a silver compound at the reaction between a gallium precursor and a sulfur precursor in the presence of a first semiconductor nanocrystal can prevent undesired changes (e.g., particle agglomeration or compositional change) in the first semiconductor nanocrystal. According to the method of the embodiment, a larger amount of semiconductor nanoparticles can be formed in a crude solution (e.g., the resulting reaction solution obtained after the reaction).

[0151] Relative to a gallium precursor (e.g., gallium-based precursor), the silver compound can be added to the reaction medium in an amount of greater than or equal to about 0.01 mol%, greater than or equal to about 0.03 mol%, greater than or equal to about 0.04 mol%, greater than or equal to about 0.05 mol%, greater than or equal to about 0.07 mol%, greater than or equal to about 0.09 mol%, greater than or equal to about 0.1 mol%, greater than or equal to about 0.3 mol%, greater than or equal to about 0.5 mol%, greater than or equal to about 1 mol%, or greater than or equal to about 2 mol%. Relative to the gallium precursor, the amount of the silver compound can be greater than or equal to about 0.01 mol%, greater than or equal to about 0.02 mol%, greater than or equal to about 0.03 mol%, greater than or equal to about 0.04 mol%, greater than or equal to about 0.045 mol%, greater than or equal to about 0.05 mol%, greater than or equal to about 0.052 mol%, greater than or equal to about 0.06 mol%, greater than or equal to about 0.07 mol%, greater than or equal to about 0.09 mol%, greater than or equal to about 0.1 mol%, greater than or equal to about 0.3 mol%, greater than or equal to about 0.5 mol%, greater than or equal to about 0.6 mol%, greater than or equal to about 0.7 mol%, greater than or equal to about 0.8 mol%, greater than or equal to about 0.9 mol%, greater than or equal to about 1 mol%, greater than or equal to about 2 mol%, greater than or equal to about 3 mol%, greater than or equal to about 4 mol%, greater than or equal to about 5 mol%, greater than or equal to about 6 mol%, greater than or equal to about 7 mol%, greater than or equal to about 8 mol%, greater than or equal to about 9 mol%, greater than or equal to about 10 mol%, greater than or equal to about 11 mol%, greater than or equal to about 12 mol%, greater than or equal to about 13 mol%, greater than or equal to about 14 mol%, or greater than or equal to about 15 mol%. Relative to the gallium precursor, the amount of the silver compound can be less than or equal to about 50 mol%, less than or equal to about 30 mol%, less than or equal to about 25 mol%, less than or equal to about 20 mol%, less than or equal to about 18 mol%, less than or equal to about 17 mol%, less than or equal to about 16 mol%, less than or equal to about 15 mol%, less than or equal to about 14 mol%, less than or equal to about 13 mol%, less than or equal to about 12 mol%, less than or equal to about 11 mol%, less than or equal to about 10 mol%, less than or equal to about 9 mol%, less than or equal to about 8 mol%, less than or equal to about 7 mol%, less than or equal to about 6 mol%, less than or equal to about 5 mol%, less than or equal to about 4 mol%, or less than or equal to about 3 mol%. Relative to the gallium precursor, the amount of the silver compound can be greater than or equal to about 1 mol% and less than or equal to about 12 mol%.

[0152] The silver compound may include silver powder, alkylated silver compound, silver alcohol, silver carboxylate, silver acetylacetonate, silver nitrate, silver sulfate, silver halide, silver cyanide, silver hydroxide, silver oxide, silver peroxide, silver carbonate, or a combination thereof. The silver compound may include silver nitrate, silver acetate, silver acetylacetonate, silver chloride, silver bromide, silver fluoride, or a combination thereof.

[0153] In an embodiment, the method may further include: preparing an additional reaction medium comprising an organic solvent and an organic ligand; heating the additional reaction medium; and in the additional reaction medium, in the presence of a first semiconductor nanocrystal comprising indium, gallium, silver, and sulfur or a particle comprising the first semiconductor nanocrystal (e.g., the formed semiconductor nanoparticles), (e.g., at the reaction temperature), contacting (reacting) a zinc precursor, a gallium precursor, and a sulfur precursor to further form a third semiconductor nanocrystal on the formed semiconductor nanoparticles. The third semiconductor nanocrystal may include zinc gallium sulfide (ZnGaS). Details regarding the third semiconductor nanocrystal are the same as those described herein.

[0154] The method may further include: preparing an additional reaction medium comprising an organic ligand in an organic solvent; heating the additional reaction medium; and in the presence of the formed semiconductor nanoparticles, (e.g., at the reaction temperature), contacting (e.g., reacting) a zinc precursor and a chalcogen precursor (e.g., a sulfur precursor) to provide a fourth semiconductor nanocrystal or an outer layer comprising zinc chalcogenide on the surface of the semiconductor nanoparticles. Details regarding the fourth semiconductor nanocrystal are the same as those described herein.

[0155] In an embodiment, the reaction temperature for forming the third semiconductor nanocrystal or the fourth semiconductor nanocrystal may be greater than or equal to about 120 °C, greater than or equal to about 130 °C, greater than or equal to about 150 °C, greater than or equal to about 180 °C, greater than or equal to about 200 °C, greater than or equal to about 205 °C, or greater than or equal to about 208 °C and less than or equal to about 240 °C, less than or equal to about 230 °C, less than or equal to about 225 °C, or less than or equal to about 215 °C. The reaction time for forming the third semiconductor nanocrystal or the fourth semiconductor nanocrystal may be greater than or equal to about 10 minutes, greater than or equal to about 30 minutes, greater than or equal to about 40 minutes, greater than or equal to about 1 hour, greater than or equal to about 80 minutes, or greater than or equal to about 90 minutes and less than or equal to about 5 hours, less than or equal to about 4 hours, less than or equal to about 3 hours, less than or equal to about 2 hours, less than or equal to about 90 minutes, or less than or equal to about 70 minutes.

[0156] In the method, the manner of adding the precursor to the (e.g., heated) reaction medium may include injection addition (e.g., syringe addition), dropwise addition, or a combination thereof.

[0157] The type of silver precursor is not particularly limited and can be appropriately selected. The silver precursor may include silver powder, alkylated silver compounds, silver alcoholates, silver carboxylates, silver acetylacetonate, silver nitrate, silver sulfate, silver halides, silver cyanide, silver hydroxide, silver oxide, silver peroxide, silver carbonate, or combinations thereof. The silver precursor may include silver nitrate, silver acetate, silver acetylacetonate, or combinations thereof.

[0158] The type of indium precursor is not particularly limited and can be appropriately selected. The indium precursor may include indium powder, alkylated indium compounds, indium alcoholates, indium carboxylates, indium nitrate, indium perchlorate, indium sulfate, indium acetylacetonate, indium halides, indium cyanide, indium hydroxide, indium oxide, indium peroxide, indium carbonate, or combinations thereof. The indium precursor may include indium carboxylates (such as indium oleate, indium myristate, and indium acetate), indium hydroxide, indium chloride, indium bromide, indium iodide, or combinations thereof.

[0159] The type of sulfur precursor is not particularly limited and can be appropriately selected. The sulfur precursor may be an organic solvent dispersion or a reaction product of sulfur and an organic solvent (e.g., octadecene sulfide (S-ODE), trioctylphosphine-sulfide (S-TOP), tributylphosphine-sulfide (S-TBP), triphenylphosphine-sulfide (S-TPP), trioctylamine-sulfide (S-TOA)), trimethylsilylalkyl thioether, trimethylsilyl thioether, mercaptopropylsilane, ammonium sulfide, sodium sulfide, C1 to C30 thiol compounds (e.g., α-toluenethiol, octanethiol, dodecanethiol, octadecenethiol, etc.), isocyanate compounds (e.g., cyclohexyl isothiocyanate, etc.), alkylidene trithiocarbonates (e.g., ethylene trithiocarbonate, etc.), allyl mercaptan, thiourea compounds (e.g., dialkylthioureas having C1 to C40 alkyl groups such as dimethylthiourea, diethylthiourea, ethylmethylthiourea, dipropylthiourea, etc.), thioacetamide compounds, or combinations thereof.

[0160] The selenium precursor (if present) may include selenium-trioctylphosphine (Se-TOP), selenium-tributylphosphine (Se-TBP), selenium-triphenylphosphine (Se-TPP), or combinations thereof.

[0161] The type of zinc precursor is not particularly limited and can be appropriately selected. In the examples, the zinc precursor can include Zn metal powder, alkylated Zn compounds, Zn alkoxides, Zn carboxylates, Zn nitrates, Zn perchlorates, Zn sulfates, Zn acetylacetonates, Zn halides, Zn cyanides, Zn hydroxides, Zn oxides, Zn peroxides, or combinations thereof. The zinc precursor can be dimethylzinc, diethylzinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, or combinations thereof. In the examples, when forming a semiconductor nanocrystal layer containing zinc and sulfur, the zinc precursor can include Zn halides, but is not limited thereto.

[0162] For example, the type of gallium precursor used for preparing the first semiconductor nanoparticles or additional semiconductor nanocrystals is not particularly limited and can be appropriately selected. The gallium precursor can include gallium powder, alkylated gallium compounds, gallium alkoxides, gallium carboxylates, gallium nitrates, gallium perchlorates, gallium sulfates, gallium acetylacetonates, gallium halides, gallium cyanides, gallium hydroxides, gallium oxides, gallium peroxides, gallium carbonates, or combinations thereof. The gallium precursor can include gallium chloride, gallium iodide, gallium bromide, gallium acetate, gallium acetylacetonate, gallium oleate, gallium palmitate, gallium stearate, gallium myristate, gallium hydroxide, or combinations thereof.

[0163] The organic ligand can include RCOOH, RNH2, R2NH, R3N, RSH, RH2PO, R2HPO, R3PO, RH2P, R2HP, R3P, ROH, RCOOR ', RPO(OH)2, RHPOOH, R2POOH, or a combination thereof, where R and R' are each independently a substituted or unsubstituted C1 to C40 (or C3 to C24) aliphatic hydrocarbon group (e.g., alkyl, alkenyl, or alkynyl) or a substituted or unsubstituted C6 to C40 (or C6 to C24) aromatic hydrocarbon group (e.g., C6 to C20 aryl). The organic ligand can bind to the surface of the semiconductor nanoparticle. Examples of the organic ligand can include: methanethiol, ethanethiol, propanethiol, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, 1-nonanethiol, decanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, benzyl mercaptan; methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, octylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine; formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid, benzoic acid; substituted or unsubstituted methylphosphine (e.g., trimethylphosphine, methyldiphenylphosphine, etc.), substituted or unsubstituted ethylphosphine (e.g., triethylphosphine, ethyldiphenylphosphine, etc.), substituted or unsubstituted propylphosphine, substituted or unsubstituted butylphosphine, substituted or unsubstituted pentylphosphine, substituted or unsubstituted octylphosphine (e.g., trioctylphosphine (TOP), etc.); phosphine oxides, such as substituted or unsubstituted methylphosphine oxide (e.g., trimethylphosphine oxide, methyldiphenylphosphine oxide, etc.), substituted or unsubstituted ethylphosphine oxide (e.g., triethylphosphine oxide, ethyldiphenylphosphine oxide, etc.), substituted or unsubstituted propylphosphine oxide, substituted or unsubstituted butylphosphine oxide, substituted or unsubstituted octylphosphine oxide (e.g., trioctylphosphine oxide (TOPO), etc.); diphenylphosphine, triphenylphosphine, or their oxide compounds; phosphonic acid; C5 to C20 alkylphosphonic acid; C5 to C20 alkylphosphinic acid (such as hexylphosphinic acid, octylphosphinic acid, dodecylphosphinic acid, tetradecylphosphinic acid, hexadecylphosphinic acid, octadecylphosphinic acid, etc.), but the examples are not limited thereto. The organic ligand can be used alone or as a mixture of two or more.

[0164] The first organic solvent, the second organic solvent, or the organic solvent may include: amine solvents (e.g., C1-C50 aliphatic amines), nitrogen-containing heterocyclic compounds (such as pyridine); C6-C40 aliphatic hydrocarbons (e.g., alkanes, alkenes, alkynes, etc.), such as hexadecane, octadecane, octadecene, squalene, etc.; C6-C30 aromatic hydrocarbons, such as phenyl dodecane, phenyl tetradecane, phenyl hexadecane, etc.; phosphines substituted with C6-C22 alkyl groups, such as trioctylphosphine, etc.; phosphine oxides substituted with C6-C22 alkyl groups, such as trioctylphosphine oxide, etc.; C12-C22 aromatic ethers, such as phenyl ether, benzyl ether, etc.; or combinations thereof. The amine solvent may be a compound having one or more (e.g., two or three) C1-C50, C2-C45, C3-C40, C4-C35, C5-C30, C6-C25, C7-C20, C8-C15, or C6-C22 aliphatic hydrocarbon groups (e.g., alkyl, alkenyl, or alkynyl groups). In an embodiment, the amine solvent may be: C6-C22 primary amines, such as hexadecylamine, oleylamine, etc.; C6-C22 secondary amines, such as dioctylamine, etc.; C6-C22 tertiary amines, such as trioctylamine, etc.; or combinations thereof.

[0165] The amounts of the organic ligand and the precursors in the reaction medium can be appropriately selected in consideration of the type of the solvent, the type of the organic ligand and each precursor, and the desired size and composition of the particles. The molar ratio between the precursors can be changed in consideration of the desired molar ratio in the final nanoparticles, the reactivity between the precursors, etc. In an embodiment, the manner of adding each precursor is not particularly limited. In an embodiment, the total amount or all of the precursors can be added at once. In an embodiment, the total amount of the precursors can be divided and added in equal portions of greater than or equal to about 2 and less than or equal to about 10. The precursors can be added simultaneously or sequentially in a predetermined order. The reaction can be carried out in an inert gas atmosphere, in air, or in a vacuum state, but is not limited thereto.

[0166] When a non-solvent is added to the final reaction solution after the reaction is completed, nanoparticles (e.g., organo-ligand coordinated) can be separated (e.g., precipitated). The non-solvent can be a polar solvent that is miscible with the solvent used in the reaction but cannot disperse the nanocrystals. The non-solvent can be selected according to the solvent used in the reaction and can be, for example, acetone, ethanol, butanol, isopropanol, ethylene glycol, water, tetrahydrofuran (THF), dimethyl sulfoxide (DMSO), diethyl ether, formaldehyde, acetaldehyde, a solvent having a solubility parameter similar to that of the aforementioned solvents, or a combination thereof. Separation can be carried out by centrifugation, precipitation, chromatography, or distillation. The separated nanocrystals can be washed by adding them to a washing solvent as needed. The washing solvent is not particularly limited, and a solvent having a solubility parameter similar to that of the organic solvent or the organic ligand can be used. The non-solvent or the washing solvent can be: an alcohol; an alkane solvent such as hexane, heptane, octane, etc.; an aromatic solvent such as toluene, benzene, etc.; a halogenated solvent such as chloroform, etc.; or a combination thereof, but the examples are not limited thereto.

[0167] The semiconductor nanoparticles thus prepared can be dispersed in a dispersion solvent. The semiconductor nanoparticles thus prepared can form an organic solvent dispersion. The organic solvent dispersion may not include water and / or an organic solvent miscible with water. The dispersion solvent can be appropriately selected. The dispersion solvent can include the above-mentioned organic solvents. The dispersion solvent can include a substituted or unsubstituted C1 to C40 aliphatic hydrocarbon, a substituted or unsubstituted C6 to C40 aromatic hydrocarbon, or a combination thereof.

[0168] In one or more embodiments, the composite can include: a matrix; and the semiconductor nanoparticles described herein, wherein the semiconductor nanoparticles can be dispersed in the matrix. The composite may further contain metal oxide fine particles. The composite or the semiconductor nanoparticles can be configured to emit a first light (e.g., green light or red light). In an embodiment, the composite can be in the form of a patterned film. The composite may further include semiconductor nanoparticles configured to emit a second light different from the first light. In an embodiment, the composite can have a sheet form. The sheet may further include semiconductor nanoparticles (e.g., additional semiconductor nanoparticles) configured to emit a second light different from the first light.

[0169] The semiconductor nanoparticles described herein or a composite including the semiconductor nanoparticles can exhibit an increased level of blue light absorption (e.g., improved incident light absorption) and / or improved optical properties (e.g., increased luminescence efficiency and narrower full width at half maximum), and can emit light of a desired wavelength (e.g., the first light).

[0170] The complex may (e.g., in a predetermined amount) include semiconductor nanoparticles or a population of semiconductor nanoparticles and exhibit increased light absorption. The incident light absorption rate (e.g., blue light absorption rate) of the complex may be greater than or equal to about 70%, greater than or equal to about 73%, greater than or equal to about 75%, greater than or equal to about 77%, greater than or equal to about 80%, greater than or equal to about 83%, greater than or equal to about 85%, greater than or equal to about 87%, greater than or equal to about 90%, greater than or equal to about 93%, greater than or equal to about 94%, greater than or equal to about 95%, greater than or equal to about 96%, greater than or equal to about 97%, greater than or equal to about 98%, or greater than or equal to about 99%. The incident light absorption rate (e.g., blue light absorption rate) of the complex may be from about 70% to about 100%, from about 80% to about 98%, from about 95% to about 99%, from about 96% to about 98%, or a combination thereof.

[0171] The incident light absorption rate of the complex may be calculated according to Equation 5: Equation 5 Incident light absorption rate (%) = [(B - B') / B] × 100% Wherein, in Equation 5, B is the amount of incident light provided to the complex, and B' is the amount of incident light passing through the complex.

[0172] The photoconversion efficiency (CE) of the complex (e.g., external quantum efficiency or internal quantum efficiency) may be greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, greater than or equal to about 70%, or greater than or equal to about 75%: Equation 2 Internal quantum efficiency (%) = [A / (B - B')] × 100% Equation 3 External quantum efficiency (%) = [A / B] × 100% Wherein: A: The amount of the first light emitted from the complex B: The amount of incident light irradiated B': The amount of incident light passing through the complex.

[0173] The inventors have found that luminescent particles including semiconductor nanocrystals based on group 11-13-16 compounds may exhibit significantly reduced properties when included in a complex applied to an actual device even if a desired level of optical properties is achieved. The semiconductor nanoparticles of the examples may provide a complex exhibiting enhanced optical properties by having the above-described composition and / or structural features and may exhibit high optical property retention even in the form of a thin film.

[0174] In an embodiment, the composite can be prepared from an ink composition. The ink composition can include: a liquid carrier; and a plurality of semiconductor nanoparticles (the semiconductor nanoparticles of the embodiment). The semiconductor nanoparticles can be dispersed in the liquid carrier.

[0175] The liquid carrier can include a liquid monomer, an organic solvent, or a combination thereof. The ink composition can further include one or more metal oxide nanoparticles (e.g., dispersed in the liquid carrier). The ink composition can further include a dispersant (for dispersing the nanoparticles and / or metal oxide nanoparticles). The dispersant can include an organic compound (monomer or polymer) containing a carboxylic acid group. The liquid carrier may not include (e.g., volatile) organic solvents. The ink composition can be a solvent-free system.

[0176] The liquid monomer can include a (photo)polymerizable monomer containing a carbon-carbon double bond. The composition can also optionally include a (thermal or photo)initiator. The polymerization of the composition can be initiated by light or heat.

[0177] Details of the nanoparticles in the composition (or composite) are as described herein. The amount of semiconductor nanoparticles in the composition (or composite) can be appropriately adjusted considering the desired end use (e.g., color filter, etc.). In an embodiment, based on the solid content of the composition or composite (hereinafter, the solid content can be the solid content of the composition or the solid content of the composite), the amount of semiconductor nanoparticles in the composition (or composite) can be greater than or equal to about 1 weight percent (wt%), e.g., greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 4 wt%, greater than or equal to about 5 wt%, greater than or equal to about 6 wt%, greater than or equal to about 7 wt%, greater than or equal to about 8 wt%, greater than or equal to about 9 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, greater than or equal to about 20 wt%, greater than or equal to about 25 wt%, greater than or equal to about 30 wt%, greater than or equal to about 35 wt%, or greater than or equal to about 40 wt%. Based on the solid content of the composition or composite, the amount of semiconductor nanoparticles can be less than or equal to about 70 wt%, e.g., less than or equal to about 65 wt%, less than or equal to about 60 wt%, less than or equal to about 55 wt%, or less than or equal to about 50 wt%. The weight percentage of a given component relative to the total solid content in the composition can represent the amount of the given component in the composite described herein.

[0178] In an embodiment, the ink composition may be a photoresist composition containing semiconductor nanoparticles that can be applied in a lithographic manner. In an embodiment, the ink composition may be a composition containing semiconductor nanoparticles that can provide a pattern in a printing manner (e.g., a droplet ejection method such as inkjet printing). The composition according to an embodiment may not include a conjugated (or conductive) polymer (except for the cardo binder to be described herein). The composition according to an embodiment may include a conjugated polymer. Herein, a conjugated polymer refers to a polymer having conjugated double bonds in the main chain (e.g., poly(phenylene vinylene), etc.).

[0179] In the composition according to an embodiment, a dispersant can ensure the dispersibility of the nanoparticles. In an embodiment, the dispersant may be a binder (or binder polymer). The binder may include a carboxylic acid group (e.g., in the repeating unit). The binder may be an insulating polymer. The binder may be a compound (monomer or polymer) containing a carboxylic acid group.

[0180] In the composition (or composite), based on the total solid content of the composition (or composite), the amount of the dispersant may be greater than or equal to about 0.5 wt%, e.g., greater than or equal to about 1 wt%, greater than or equal to about 5 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt% or greater than or equal to about 20 wt%. Based on the total solid content of the composition (or composite), the amount of the dispersant may be less than or equal to about 55 wt%, less than or equal to about 35 wt%, less than or equal to about 33 wt% or less than or equal to about 30 wt%.

[0181] In the composition (or liquid carrier), a liquid monomer or a polymerizable (e.g., photo-polymerizable) monomer containing a carbon-carbon double bond (hereinafter referred to as a monomer) may include a (meth)acryloyl group-containing monomer (e.g., photo-polymerizable). The monomer may be a precursor for an insulating polymer.

[0182] Based on the total weight or total solid content of the composition, the amount of the (photo-polymerizable) monomer may be greater than or equal to about 0.5 wt%, e.g., greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt% or greater than or equal to about 10 wt%. Based on the total weight or total solid content of the composition, the amount of the (photo-polymerizable) monomer may be less than or equal to about 30 wt%, e.g., less than or equal to about 28 wt%, less than or equal to about 25 wt%, less than or equal to about 23 wt%, less than or equal to about 20 wt%, less than or equal to about 18 wt%, less than or equal to about 17 wt%, less than or equal to about 16 wt% or less than or equal to about 15 wt%.

[0183] The (photo)initiator included in the composition can be used for the (photo)polymerization of the above monomers. An initiator is a compound that promotes a radical reaction (e.g., radical polymerization of monomers) by generating radical species under mild conditions (e.g., via heat or light). The initiator can be a thermal initiator or a photoinitiator. The initiator is not particularly limited and can be appropriately selected.

[0184] In the composition, the amount of the initiator can be appropriately adjusted in consideration of the type and amount of the polymerizable monomer. In the examples, based on the total weight (or total solids content) of the composition, the amount of the initiator can be greater than or equal to about 0.01 wt% (e.g., greater than or equal to about 1 wt%) and less than or equal to about 10 wt% (e.g., less than or equal to about 9 wt%, less than or equal to about 8 wt%, less than or equal to about 7 wt%, less than or equal to about 6 wt% or less than or equal to about 5 wt%), but is not limited thereto.

[0185] The composition (or composite) may further include a (polyfunctional or monofunctional) thiol compound having at least one thiol group at the terminal (or a moiety derived therefrom, such as a moiety generated by the reaction between a thiol and a carbon-carbon double bond, e.g., a sulfide group), metal oxide particles, or a combination thereof.

[0186] The metal oxide particles can include TiO2, SiO2, BaTiO3, Ba2TiO4, ZnO, or a combination thereof. In the composition (or composite), based on the total solids content, the amount of the metal oxide particles can be greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt% or greater than or equal to about 10 wt% and less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 25 wt%, less than or equal to about 20 wt%, less than or equal to about 15 wt%, less than or equal to about 10 wt%, less than or equal to about 7 wt%, less than or equal to about 5 wt% or less than or equal to about 3 wt%.

[0187] The diameter of the metal oxide particles is not particularly limited and can be appropriately selected. The diameter of the metal oxide particles can be greater than or equal to about 100 nm (e.g., greater than or equal to about 150 nm or greater than or equal to about 200 nm) and less than or equal to about 1000 nm or less than or equal to about 800 nm.

[0188] The polythiol compound can be a dithiol compound, a trithiol compound, a tetrathiol compound, or a combination thereof. For example, the thiol compound can be ethylene glycol bis(3-mercaptopropionate), ethylene glycol dimercaptoacetate, trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetra(3-mercaptopropionate), pentaerythritol tetra(2-mercaptoacetate), 1,6-hexanedithiol, 1,3-propanedithiol, 1,2-ethanedithiol, polyethylene glycol dithiol including 1 to 10 ethylene glycol repeating units, or a combination thereof.

[0189] Based on the total solid content, the amount of the thiol compound (or the moiety derived therefrom) can be less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 20 wt%, less than or equal to about 10 wt%, less than or equal to about 9 wt%, less than or equal to about 8 wt%, less than or equal to about 7 wt%, less than or equal to about 6 wt%, or less than or equal to about 5 wt%. Based on the total solid content, the amount of the thiol compound (or the moiety derived therefrom) can be greater than or equal to about 0.1 wt%, for example, greater than or equal to about 0.5 wt%, greater than or equal to about 1 wt%, greater than or equal to about 5 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, greater than or equal to about 18 wt%, or greater than or equal to about 20 wt%.

[0190] The composition or liquid carrier may include an organic solvent. In embodiments, the composition or liquid carrier may not include an organic solvent. If present, the type of organic solvent that may be used is not particularly limited. The type and amount of the organic solvent are appropriately determined in consideration of the types and amounts of the foregoing main components (i.e., nanoparticles, dispersants, polymerizable monomers, initiators, thiol compounds, etc., if present) and other additives to be described herein. In addition to the desired amount of (non-volatile) solids, the composition may include a balance of solvent. In embodiments, examples of the organic solvent may be glycol solvents such as ethylene glycol, diethylene glycol, polyethylene glycol, etc.; glycol ether solvents such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, etc.; glycol ether acetate solvents such as ethylene glycol acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, etc.; propylene glycol solvents such as propylene glycol, etc.; propylene glycol ether solvents such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, propylene glycol diethyl ether, dipropylene glycol diethyl ether, etc.; propylene glycol ether acetate solvents such as propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, etc.; amide solvents such as N-methylpyrrolidone, dimethylformamide, dimethylacetamide, etc.; ketone solvents such as methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclohexanone, etc.; petroleum solvents such as toluene, xylene, solvent naphtha, etc.; ester solvents such as ethyl acetate, butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, etc.; ether solvents such as diethyl ether, dipropyl ether, dibutyl ether, etc.; chloroform, C1-C40 aliphatic hydrocarbon solvents (e.g., alkanes, alkenes or alkynes), halogen (e.g., chlorine) substituted C1 to C40 aliphatic hydrocarbon solvents (e.g., dichloroethane, chloroform, etc.), C6 to C40 aromatic hydrocarbon solvents (e.g., toluene, xylene, etc.), halogen (e.g., chlorine) substituted C6 to C40 aromatic hydrocarbon solvents; or combinations thereof.

[0191] In addition to the foregoing components, the composition (or composite) of the embodiments may further include additives (such as a light diffusing agent, a leveling agent, a coupling agent, or combinations thereof). The components included in the composition of the embodiments (binder, monomer, solvent, additive, thiol compound, cardo binder, etc.) may be appropriately selected, and for specific details thereof, for example, reference may be made to US-2017-0052444-A1 (which is incorporated herein in its entirety).

[0192] In the preparation of the composition according to the embodiments, each of the above components may be sequentially produced or simultaneously mixed, and the order thereof is not particularly limited.

[0193] The composition can provide a color conversion layer (or a patterned film of the composite) through, for example, (free radical) polymerization. The color conversion layer (or the patterned film of the composite) can be manufactured using a photoresist composition. Refer to Figure 1A , the method may include: forming a film of the aforementioned composition on a substrate (S1); pre-baking the film according to a selection (S2); exposing selected regions of the film to light (for example, light having a wavelength less than or equal to about 400 nm) (S3); and developing the exposed film with an alkaline developer solution to obtain a pattern of the quantum dot-polymer composite (S4).

[0194] Refer to Figure 1A , the aforementioned composition can be applied to a substrate to a predetermined thickness using a suitable method (such as spin coating or slot coating) to form a film. The formed film can optionally undergo a pre-baking (PRB) step. The pre-baking can be carried out by selecting appropriate conditions from known conditions such as temperature, time, atmosphere, etc.

[0195] The formed (or optionally, pre-baked) film can be exposed to light (EXP) having a predetermined wavelength under a mask having a predetermined pattern. The wavelength and intensity of the light can be selected in consideration of the type and amount of the photoinitiator, the type and amount of the quantum dots, etc.

[0196] Then the exposed film can be treated (for example, dipped or sprayed) with an alkaline developer solution to dissolve the unexposed regions and obtain the desired pattern (DEV). Optionally, the obtained pattern can be post-baked (POB) at a temperature of about 150 °C to about 230 °C for a predetermined time (for example, greater than or equal to about 10 minutes or greater than or equal to about 20 minutes) to improve the crack resistance and solvent resistance of the pattern (S5).

[0197] When the color conversion layer or the patterned film of the nanoparticle composite has a plurality of repeating portions (i.e., color conversion regions), each repeating portion can be formed by preparing a plurality of compositions including quantum dots having desired luminescent properties (photoluminescence peak wavelength, etc.) (for example, quantum dots emitting red light, quantum dots emitting green light, or optionally quantum dots emitting blue light) and repeating the aforementioned pattern formation process for each composition as needed multiple times (for example, 2 times or more or 3 times or more), thereby obtaining a nanoparticle-polymer composite having a desired pattern (S6). For example, the nanoparticle-polymer composite can have a pattern of at least two repeating color portions (for example, RGB color portions). The nanoparticle-polymer composite pattern can be used as a photoluminescent type color filter in a display device.

[0198] The color conversion layer or the patterned film of the nanoparticle composite can be manufactured using an ink composition configured to form a pattern in an inkjet manner. Refer to Figure 1B, such a method may include preparing an ink composition according to an embodiment, providing a substrate (e.g., a substrate having pixel regions patterned by electrodes and optionally dam or trench-type partition walls, etc.), and depositing the ink composition on the substrate (or pixel region) to form, for example, a first composite layer (or first region). The method may include depositing the ink composition on the substrate (or pixel region) to form, for example, a second composite layer (or second region). The first composite layer and the second composite layer may be a first quantum dot layer and a second quantum dot layer, respectively. The formation of the first composite layer and the formation of the second composite layer may be carried out simultaneously or sequentially.

[0199] The deposition of the ink composition can be carried out using a suitable liquid crystal discharger (e.g., an inkjet or nozzle printing system (having an ink reservoir and at least one print head)). The deposited ink composition can be provided (the first or second) composite layer by removing the solvent via heating and polymerization. The method can provide a highly precise nanoparticle-polymer composite film or patterned film in a short time by a simple method.

[0200] In the nanoparticle-polymer composite (e.g., the first composite) of the embodiment, the (polymer) matrix may include the components described herein with respect to the composition. In the composite, based on the total weight of the composite, the amount of the matrix may be greater than or equal to about 10 wt%, greater than or equal to about 20 wt%, greater than or equal to about 30 wt%, greater than or equal to about 40 wt%, greater than or equal to about 50 wt% or greater than or equal to about 60 wt%. Based on the total weight of the composite, the amount of the matrix may be less than or equal to about 95 wt%, less than or equal to about 90 wt%, less than or equal to about 80 wt%, less than or equal to about 70 wt%, less than or equal to about 60 wt% or less than or equal to about 50 wt%.

[0201] The (polymer) matrix may include a dispersant (e.g., a binder polymer containing carboxylic acid groups), a polymerization product of a polymerizable monomer including (at least one, e.g., at least two, at least three, at least four or at least five) carbon-carbon double bonds (e.g., an insulating polymer), a polymerization product of a polymerizable monomer and a polythiol compound having at least two thiol groups (e.g., at the end) or a combination thereof. The matrix may include a linear polymer, a crosslinked polymer or a combination thereof. The (polymer) matrix may not include a conjugated polymer (excluding cardo resins). The matrix may include a conjugated polymer.

[0202] The crosslinked polymer may include a thiol-ene resin, a crosslinked poly(meth)acrylate, a crosslinked polyurethane, a crosslinked epoxy resin, a crosslinked vinyl polymer, a crosslinked silicone resin or a combination thereof. In an embodiment, the crosslinked polymer may be a polymerization product of the aforementioned polymerizable monomer and an optional polythiol compound.

[0203] The linear polymer may include repeating units derived from carbon-carbon unsaturated bonds (e.g., carbon-carbon double bonds). The repeating units may include carboxylic acid groups. The linear polymer may include ethylene repeating units.

[0204] The repeating units containing carboxylic acid groups may include units derived from monomers including carboxylic acid groups and carbon-carbon double bonds, units derived from monomers having dianhydride moieties, or combinations thereof.

[0205] The (polymer) matrix may include a compound containing carboxylic acid groups (e.g., an adhesive, an adhesive polymer, or a dispersant) (e.g., for dispersing nanoparticles or adhesives).

[0206] The first composite (or its film or pattern) may have a thickness, for example, less than or equal to about 25 μm, less than or equal to about 20 μm, less than or equal to about 15 μm, less than or equal to about 10 μm, less than or equal to about 8 μm, or less than or equal to about 7 μm to greater than about 2 μm (e.g., greater than or equal to about 3 μm, greater than or equal to about 3.5 μm, greater than or equal to about 4 μm, greater than or equal to about 5 μm, greater than or equal to about 6 μm, greater than or equal to about 7 μm, greater than or equal to about 8 μm, greater than or equal to about 9 μm, or greater than or equal to about 10 μm).

[0207] Semiconductor nanoparticles, composites (or their patterns) including semiconductor nanoparticles, or color conversion panels including them may be included in an electronic device. Such electronic devices may include display devices, light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), quantum dot LEDs, sensors, solar cells, imaging sensors, photodetectors, or liquid crystal display devices, but the embodiments are not limited thereto. The aforementioned quantum dots may be included in an electronic device. Such electronic devices may include, but are not limited to, portable terminal devices, monitors, notebook PCs, televisions, electronic billboards, cameras, automobiles, etc., but the embodiments are not limited thereto. The electronic device may be a portable terminal device, a monitor, a laptop personal computer, or a television including a display device (or a light-emitting device) containing quantum dots. The electronic device may be a camera or a mobile terminal device including an image sensor containing quantum dots. The electronic device may be a camera or a vehicle including a photodetector containing quantum dots.

[0208] Embodiments provide a color conversion layer (e.g., a color conversion structure or a color conversion panel) including a color conversion region including semiconductor nanoparticles described herein. The color conversion panel may include a color conversion layer including the color conversion region and optionally partition walls defining each region of the color conversion layer. The color conversion region may include a first region corresponding to a first pixel, and the first region may include semiconductor nanoparticles or a semiconductor nanoparticle composite. In the color conversion panel of an embodiment, the semiconductor nanoparticle composite may be in the form of a patterned film. In another embodiment, the semiconductor nanoparticle composite may have a sheet form. The first region may include a first composite, and the first composite may include a matrix and semiconductor nanoparticles dispersed in the matrix and may be configured to emit a first light. Embodiments provide semiconductor nanoparticles or a group of semiconductor nanoparticles.

[0209] The color conversion layer (e.g., a color conversion structure) may include a semiconductor nanoparticle composite or a patterned film of the semiconductor nanoparticle composite according to an embodiment. Figure 2A is a schematic cross-sectional view of a color conversion panel according to an embodiment. Referring to Figure 2A , the color conversion panel may also optionally include partition walls (e.g., a black matrix (BM), dams, or a combination thereof) defining each region of the color conversion layer (e.g., a color conversion structure). Figure 2B shows an electronic device (display device) including a color conversion panel and a light source according to another embodiment. In the electronic device of an embodiment, the color conversion panel including a color conversion layer or a color conversion structure may be disposed on a chip-on LED (e.g., a chip-on micro-LED). Referring to Figure 3B , a circuit (e.g., an Si driver integrated circuit (IC)) configured to drive the light source may be disposed under a light source (e.g., a blue LED) configured to emit incident light (e.g., blue light). The color conversion layer may include a first composite including semiconductor nanoparticles emitting a first light (e.g., green light), a second composite including semiconductor nanoparticles emitting a second light (e.g., red light), or a third composite emitting a third light (e.g., incident light or blue light) or allowing the third light (e.g., incident light or blue light) to pass through. Partition walls (PW) (e.g., including an inorganic material such as silicon or silicon oxide, or an organic material-based) may be disposed between the respective composites. The partition walls may include trench holes, via holes, or a combination thereof. A first optical element (e.g., an absorption type color filter) may be disposed on a light extraction surface of the color conversion layer. Additional optical elements (such as microlenses) may be further disposed on the first optical element.

[0210] The color conversion region may include a first region configured to emit (e.g., by irradiation with incident light) the first light (or green light) described above. In an embodiment, the first region may correspond to a green pixel. The first region may include a first complex (e.g., a luminescent complex). The first light may have a peak emission wavelength within a wavelength range described later. The first light will be described in more detail with respect to the semiconductor nanoparticles described herein. The peak emission wavelength of the green light may be greater than or equal to about 500 nm, greater than or equal to about 501 nm, greater than or equal to about 504 nm, greater than or equal to about 505 nm, or greater than or equal to about 520 nm. The peak emission wavelength of the green light may be less than or equal to about 580 nm, less than or equal to about 560 nm, less than or equal to about 550 nm, less than or equal to about 530 nm, less than or equal to about 525 nm, less than or equal to about 520 nm, less than or equal to about 515 nm, or less than or equal to about 510 nm.

[0211] The color conversion region may further include (e.g., one or more) second regions configured to emit (e.g., by irradiation with excitation light) a second light (e.g., red light) different from the first light. The second region may include a second complex. The semiconductor nanoparticle complex in the second region may include semiconductor nanoparticles (e.g., quantum dots) configured to emit light having a different wavelength (e.g., different color) from the semiconductor nanoparticle complex disposed in the first region.

[0212] The second light may be red light having a peak emission wavelength of about 600 nm to about 650 nm (e.g., about 620 nm to about 650 nm). The color conversion panel may further include (one or more) third regions that emit or pass a third light (e.g., blue light) different from the first light and the second light. The incident light may include the third light (e.g., blue light and optionally green light). The third light may include blue light having a peak emission wavelength greater than or equal to about 380 nm (e.g., greater than or equal to about 440 nm, greater than or equal to about 445 nm, greater than or equal to about 450 nm, or greater than or equal to about 455 nm) to less than or equal to about 480 nm (e.g., less than or equal to about 475 nm, less than or equal to about 470 nm, less than or equal to about 465 nm, or less than or equal to about 460 nm).

[0213] In an embodiment, the color conversion panel or color conversion layer may include a plurality of first regions, and the semiconductor nanoparticle complex may form a predetermined pattern to be respectively disposed in the first regions of the color conversion panel. The semiconductor nanoparticle complex (or the pattern of the semiconductor nanoparticle complex) may be prepared from a (ink) composition by any method (e.g., in a lithographic manner or in an inkjet printing manner). Thus, the embodiment may relate to a composition including semiconductor particles further described herein in more detail.

[0214] In an embodiment, an electronic device or a display device (e.g., a display panel) may further include a color conversion layer (or a color conversion panel) and an optional light source. The light source may provide incident light to the color conversion layer or the color conversion panel. In an embodiment, the display panel may include a light-emitting panel (or a light source), the aforementioned color conversion panel, and a light-transmitting layer (light transmission layer) located between the aforementioned light-emitting panel and the aforementioned color conversion panel. The color conversion panel may include a substrate, and the color conversion layer may be disposed on the substrate.

[0215] When present, the light source or the light-emitting panel may provide incident light to the color conversion layer or the color conversion panel. The peak emission wavelength of the incident light may be greater than or equal to about 440 nm (e.g., greater than or equal to about 450 nm) and less than or equal to about 580 nm (e.g., less than or equal to about 480 nm, less than or equal to about 470 nm, or less than or equal to about 460 nm).

[0216] In an embodiment, an electronic device (e.g., a photoluminescent device) may further include a sheet of a nanoparticle composite. Referring to ​ , device 400 may include a backlight unit 410 and a liquid crystal panel 420. Optionally, the backlight unit 410 may include a quantum dot polymer composite sheet (QD sheet). For example, the backlight unit 410 may have a structure in which a reflector, a light guide plate (LGP), a light source (such as a blue LED), a quantum dot polymer composite sheet (QD sheet), and an optical film (prism, dual brightness enhancement film (DBEF, etc.)) may be stacked. The liquid crystal panel 420 may be disposed on the backlight unit 410 and have a structure including a thin film transistor (TFT), liquid crystal (LC), and a color filter between two polarizers (Pol). The quantum dot polymer composite sheet (QD sheet) may include semiconductor nanoparticles (e.g., quantum dots) that emit red and green light after absorbing light from the light source. The blue light provided from the light source may be combined with the red and green light emitted from each semiconductor nanoparticle while passing through the quantum dot polymer composite sheet and converted into white light. The white light may be separated into blue, green, and red light by the color filter in the liquid crystal panel and then emitted to the outside for each pixel. Referring to ​ , the backlight unit (BLU) may be a direct-lit BLU without a light guide plate and may include a plurality of LEDs (e.g., mini LEDs), and a light conversion sheet or a QD sheet may be disposed on the BLU.

[0217] The color conversion panel may include a substrate, and a color conversion layer may be disposed on the substrate. The color conversion layer or the color conversion panel may include a patterned film of a nanoparticle composite. The patterned film may include repeating segments configured to emit light of a desired wavelength. The repeating segments may include a second region. The second region may be a segment that emits red light. The repeating segments may include a first region. The first region may be a segment that emits green light. The repeating segments may include a third region. The third region may include a segment that emits or transmits blue light. Details of the first region, the second region, and the third region are as described herein.

[0218] The light-emitting panel or the light source may be an element that emits incident light (e.g., excitation light). The incident light may include blue light and optional green light. The light source may include an LED. The light source may include an organic light-emitting diode (OLED). The light source may include a micro-LED. On the front surface (light-emitting surface) of the first region and the second region, an optical element that blocks (e.g., reflects or absorbs) blue light (and optional green light), e.g., a blue light (and optional green light) blocking layer or a first optical filter as will be described herein, may be disposed. In an embodiment, the light source may include an organic light-emitting diode that emits blue light and an organic light-emitting diode that emits green light, and a green light removal filter may be further disposed on the third region through which the blue light is transmitted.

[0219] The light-emitting panel or the light source may include a plurality of light-emitting units corresponding to the first region and the second region, and the light-emitting units may include a first electrode and a second electrode facing each other and an (organic) electroluminescent layer disposed between the first electrode and the second electrode. The electroluminescent layer may include an organic light-emitting material. For example, each light-emitting unit of the light source may include an electroluminescent device (e.g., an organic light-emitting diode (OLED)) configured to emit light of a predetermined wavelength (e.g., blue light, green light, or a combination thereof). The structures and materials of the electroluminescent device and the organic light-emitting diode (OLED) are not particularly limited.

[0220] Hereinafter, the display panel and the color conversion panel will be described in more detail with reference to the accompanying drawings.

[0221] Refer to ​ and ​ According to an embodiment, the display panel 1000 may include a light-emitting panel 40 and a color conversion panel 50. The display panel or the electronic device may further include a light-transmissive layer 60 disposed between the light-emitting panel 40 and the color conversion panel 50 and an adhesive material 70 that bonds the light-emitting panel 40 and the color conversion panel 50. The light-transmissive layer may include a passivation layer, a filling material, a packaging layer, or a combination thereof (not shown). The material for the light-transmissive layer may be appropriately selected without particular limitation. The material for the light-transmissive layer may be an inorganic material, an organic material, an organic / inorganic hybrid material, or a combination thereof.

[0222] The light-emitting panel 40 and the color conversion panel 50 may each have surfaces facing each other, that is, the two corresponding panels may face each other, and a light-transmissive layer (or light-transmissive panel) 60 is disposed between the two panels. The color conversion panel 50 may be disposed in a direction such that light emitted from the light-emitting panel 40, for example, can irradiate the light-transmissive layer 60. An adhesive material 70 may be disposed along the edges of the light-emitting panel 40 and the color conversion panel 50, and may be, for example, a sealing material.

[0223] ​ is a plan view of an embodiment of the pixel arrangement of the display panel. Referring to ​ , the display panel 1000 may include a display area 1000D for displaying an image and a non-display area 1000P positioned in the peripheral area of the display area 1000D and provided with an adhesive material.

[0224] The display area 1000D may include a plurality of pixels PX arranged along rows (e.g., the x direction) and columns (e.g., the y direction), and each representative pixel PX may include a plurality of sub-pixels PX1, PX2, and PX3 that express (e.g., display) different colors from each other. An embodiment may be idealized to have a structure in which the three sub-pixels PX1, PX2, and PX3 are configured to provide a pixel. The embodiment may also include additional sub-pixels such as white sub-pixels, and may also include at least one sub-pixel that expresses (e.g., displays) the same color. The plurality of pixels PX may be aligned, for example, in a Bayer matrix, a matrix sold under the trade name PenTile, a diamond matrix, etc., or a combination thereof.

[0225] The sub-pixels PX1, PX2, and PX3 may express (e.g., display) colors of primary colors or combinations of primary colors, for example, may express (e.g., display) colors of red, green, blue, or combinations thereof. For example, the first sub-pixel PX1 may express (e.g., display) red, and the second sub-pixel PX2 may express (e.g., display) green, and the third sub-pixel PX3 may express (e.g., display) blue.

[0226] In the drawings, all sub-pixels are idealized to have the same size, but this is not limited thereto, and at least one of the sub-pixels may be larger or smaller than the other sub-pixels. In the drawings, all sub-pixels are idealized to have the same shape, but this is not limited thereto, and at least one of the sub-pixels may have a shape different from that of the other sub-pixels.

[0227] In a display panel or an electronic device according to an embodiment, the light-emitting panel may include a substrate and a TFT (e.g., an oxide-containing TFT, etc.) disposed on the substrate. A light-emitting device (e.g., a light-emitting device having a cascade structure) may be disposed on the TFT.

[0228] The light-emitting device may include a light-emitting layer (e.g., a blue light-emitting layer, a green light-emitting layer, or a combination thereof) between a first electrode and a second electrode facing each other. A charge generation layer may be disposed between the respective light-emitting layers. Each of the first electrode and the second electrode may be patterned into a plurality of electrode elements corresponding to pixels. The first electrode may be an anode or a cathode. The second electrode may be a cathode or an anode.

[0229] The light-emitting device may include an organic LED, a nanorod LED, a mini LED, a micro LED, or a combination thereof.

[0230] ​ Cross-sectional views of the light-emitting devices showing embodiments are respectively. In an embodiment, the “mini LED” may have a size greater than or equal to about 100 microns, greater than or equal to about 150 microns, or greater than or equal to about 200 microns and less than or equal to about 1 mm, less than or equal to about 0.5 mm, less than or equal to about 0.15 mm, or less than or equal to about 0.12 mm, but not limited thereto. In an embodiment, the “micro LED” may have a size less than about 100 microns, less than or equal to about 50 microns, or less than or equal to about 10 microns. The size of the micro LED may be greater than or equal to about 0.1 microns, greater than or equal to about 0.5 microns, greater than or equal to about 1 microns, or greater than or equal to about 5 microns, but not limited thereto.

[0231] Referring to ​ , the light-emitting device 180 may include: a first electrode 181 and a second electrode 182 facing each other; a light-emitting layer 183 between the first electrode 181 and the second electrode 182; and optional auxiliary layers 184 and 185 respectively between the first electrode 181 and the light-emitting layer 183 and between the second electrode 182 and the light-emitting layer 183.

[0232] The first electrode 181 and the second electrode 182 may be arranged to face each other along the thickness direction (e.g., the z-direction), and either the first electrode 181 or the second electrode 182 may be the anode and the other may be the cathode. The first electrode 181 may be a light-transmissive electrode, a semi-transparent electrode, or a reflective electrode, and the second electrode 182 may be a light-transmissive electrode or a semi-transparent electrode. The light-transmissive electrode or the semi-transparent electrode may be made of, for example, a thin single layer or multiple layers of a metal thin film including: a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), etc.; or silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), or a combination thereof. The reflective electrode may include a metal, a metal nitride, or a combination thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), their alloys, their nitrides (e.g., TiN), or a combination thereof, but the embodiments are not limited thereto.

[0233] One or more light-emitting layers 183 may include a first light-emitting body that emits light having a blue emission spectrum, a second light-emitting body that emits light having a green emission spectrum, or a combination thereof.

[0234] The blue emission spectrum may have a peak emission wavelength in a wavelength region of greater than or equal to about 400 nm to less than about 500 nm (and within this range, in a wavelength region of about 410 nm to about 490 nm, about 420 nm to about 480 nm, about 430 nm to about 470 nm, about 440 nm to about 465 nm, about 445 nm to about 460 nm, or about 450 nm to about 458 nm).

[0235] The green emission spectrum may have a peak emission wavelength in a wavelength region of greater than or equal to about 500 nm to less than about 590 nm (and within this range, in a wavelength region of about 510 nm to about 580 nm, about 515 nm to about 570 nm, about 520 nm to about 560 nm, about 525 nm to about 555 nm, about 530 nm to about 550 nm, or about 535 nm to about 545 nm).

[0236] For example, the light-emitting layer 183 or the light-emitting bodies included in the light-emitting layer 183 may include a phosphorescent material, a fluorescent material, or a combination thereof. For example, the light-emitting bodies may include organic light-emitting bodies, where the organic light-emitting bodies may be low-molecular compounds, high-molecular compounds, or a combination thereof. The specific types of the phosphorescent material and the fluorescent material are not particularly limited, but may be appropriately selected from known materials. For example, the light-emitting bodies may include inorganic light-emitting bodies, and the inorganic light-emitting bodies may be inorganic semiconductors, quantum dots, perovskites, or a combination thereof. The inorganic semiconductors may include metal nitrides, metal oxides, or a combination thereof. The metal nitrides, metal oxides, or a combination thereof may include group III metals (such as aluminum, gallium, indium, thallium, etc.), group IV metals (such as silicon, germanium, tin), or a combination thereof. In an embodiment, the light-emitting bodies may include inorganic light-emitting bodies, and the light-emitting device 180 may be a quantum dot light-emitting diode, a perovskite light-emitting diode, or a micro light-emitting diode (μLED). The materials that can be used as the inorganic light-emitting bodies may be appropriately selected.

[0237] In an embodiment, the light-emitting device 180 may further include auxiliary layers 184 and 185. The auxiliary layers 184 and 185 may be respectively disposed between the first electrode 181 and the light-emitting layer 183 and between the second electrode 182 and the light-emitting layer 183. The auxiliary layers 184 and 185 may be charge auxiliary layers for controlling the injection and / or mobility of charges. The auxiliary layers 184 and 185 may include at least one layer or two layers, and for example, may include a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, a hole blocking layer, or a combination thereof. If desired, at least one of the auxiliary layers 184 and 185 may be omitted. The auxiliary layers may be formed of materials appropriately selected from known materials used for organic electroluminescent devices and the like.

[0238] The light-emitting devices 180 disposed in each of the sub-pixels PX1, PX2, and PX3 may be the same as or different from each other. The light-emitting devices 180 in each of the sub-pixels PX1, PX2, and PX3 may emit light having the same or different emission spectra. The light-emitting devices 180 in each of the sub-pixels PX1, PX2, and PX3 may emit, for example, light having a blue emission spectrum, light having a green emission spectrum, or a combination thereof. The light-emitting devices 180 in each of the sub-pixels PX1, PX2, and PX3 may be separated by a pixel defining layer (not shown).

[0239] Refer to ​, the light-emitting device 180 may be a light-emitting device having a cascade structure, and may include: a first electrode 181 and a second electrode 182 facing each other; a first light-emitting layer 183a and a second light-emitting layer 183b located between the first electrode 181 and the second electrode 182; a charge generation layer 186 located between the first light-emitting layer 183a and the second light-emitting layer 183b; and optional auxiliary layers 184 and 185 located between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the second light-emitting layer 183b, respectively.

[0240] Details of the first electrode 181, the second electrode 182, and the auxiliary layers 184 and 185 are as described herein.

[0241] The first light-emitting layer 183a and the second light-emitting layer 183b may emit light having the same or different emission spectra. In an embodiment, the first light-emitting layer 183a and the second light-emitting layer 183b may emit light having a blue emission spectrum or a green emission spectrum, respectively. The charge generation layer 186 may inject charges into the first light-emitting layer 183a and / or the second light-emitting layer 183b, and may control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The charge generation layer 186 may include, for example, an n-type layer and a p-type layer, and may include, for example, an electron transport material and / or a hole transport material containing an n-type dopant and / or a p-type dopant. The charge generation layer 186 may include one layer or two or more layers.

[0242] Referring to ​ , the light-emitting device (having a cascade structure) may include: a first electrode 181 and a second electrode 182 facing each other; a first light-emitting layer 183a, a second light-emitting layer 183b, and a third light-emitting layer 183c located between the first electrode 181 and the second electrode 182; a first charge generation layer 186a located between the first light-emitting layer 183a and the second light-emitting layer 183b; a second charge generation layer 186b located between the second light-emitting layer 183b and the third light-emitting layer 183c; and optional auxiliary layers 184 and 185 located between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the third light-emitting layer 183c, respectively.

[0243] Details of the first electrode 181, the second electrode 182, and the auxiliary layers 184 and 185 are as described herein.

[0244] The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c may emit light having the same or different emission spectra. The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c may emit blue light. In an embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c may emit light having a blue emission spectrum, and the second light-emitting layer 183b may emit light having a green emission spectrum. In another embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c may emit light having a green emission spectrum, and the second light-emitting layer 183b may emit light having a blue emission spectrum.

[0245] The first charge generation layer 186a may inject charges into the first light-emitting layer 183a and / or the second light-emitting layer 183b and may control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The second charge generation layer 186b may inject charges into the second light-emitting layer 183b and / or the third light-emitting layer 183c and may control the charge balance between the second light-emitting layer 183b and the third light-emitting layer 183c. Each of the first charge generation layer 186a and the second charge generation layer 186b may include one layer or two or more layers, respectively.

[0246] Referring to ​ , in an embodiment, the light-emitting device 180 may include a light-emitting layer 183, a first electrode 181, a second electrode 182, and a plurality of nanostructures 187 disposed in the light-emitting layer 183.

[0247] One of the first electrode 181 and the second electrode 182 may be an anode, and the other may be a cathode. The first electrode 181 and the second electrode 182 may be electrodes patterned according to the direction of the arrangement of the plurality of nanostructures 187 and may include, for example: a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), etc.; or silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), their alloys, their nitrides (e.g., TiN), or a combination thereof, but the embodiments are not limited thereto.

[0248] The light-emitting layer 183 may include a plurality of nanostructures 187, and each of the sub-pixels PX1, PX2, and PX3 may include a plurality of nanostructures 187. In an embodiment, the plurality of nanostructures 187 may be arranged in one direction, but the embodiment is not limited thereto. The nanostructure 187 may be a compound-containing semiconductor configured to emit light of a predetermined wavelength, for example, by applying an electric current, and may be, for example, a linear nanostructure (such as a nanorod or a nanoneedle). The diameter or major axis of the nanostructure 187 may be, for example, several nanometers to several hundred nanometers, and the aspect ratio (or length-to-width ratio) of the nanostructure 187 may be greater than about 1, greater than or equal to about 1.5, greater than or equal to about 2.0, greater than or equal to about 3.0, greater than or equal to about 4.0, greater than or equal to about 4.5, or greater than or equal to about 5.0 to less than or equal to about 20. For example, greater than about 1 to about 20, about 1.5 to about 20, about 2.0 to about 20, about 3.0 to about 20, about 4.0 to about 20, about 4.5 to about 20, or about 5.0 to about 20.

[0249] Each of the nanostructures 187 may include a p-type region 187p, an n-type region 187n, and a multiple quantum well region 187i, and may be configured to emit light from the multiple quantum well region 187i. The nanostructure 187 may include, for example, gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or a combination thereof, and may have, for example, a core-shell structure.

[0250] The plurality of nanostructures 187 may each emit light having the same or different emission spectra. In an embodiment, the nanostructure may emit light having a blue emission spectrum, for example, a blue emission spectrum having a peak emission wavelength in a wavelength region of greater than or equal to about 400 nm to less than 500 nm, about 410 nm to about 490 nm, or about 420 nm to about 480 nm.

[0251] ​ is a schematic cross-sectional view of a device (or display panel) according to an embodiment. Refer to ​, the light source (or light-emitting panel) may include an organic light-emitting diode that emits blue light (B) (and optionally green light (G)). The organic light-emitting diode (OLED) may include at least two pixel electrodes 90a, 90b, 90c formed on a substrate 100, pixel defining layers 150a, 150b formed between adjacent pixel electrodes 90a, 90b, 90c, organic light-emitting layers 140a, 140b, 140c formed on each pixel electrode 90a, 90b, 90c, and a common electrode layer 130 formed on the organic light-emitting layers 140a, 140b, 140c. Thin film transistors (TFTs) and a substrate (not shown) may be disposed below the organic light-emitting diode (OLED). The pixel regions of the OLED may be set to correspond to the first region, the second region, and the third region as described herein. In an embodiment, the color conversion panel and the light-emitting panel may be separated as shown in ​ . In an embodiment, the color conversion panel may be directly stacked on the light-emitting panel.

[0252] A stacked structure including a light-emitting nanostructure composite pattern 170 (e.g., a first region 11 or R including light-emitting nanostructures that emit red light, a second region 21 or G including light-emitting nanostructures that emit green light, and a third region 31 or B including or not including light-emitting nanostructures (e.g., light-emitting nanostructures that emit blue light)) and a substrate 240 may be disposed on the light source. The blue light emitted from the light source may enter the first region and the second region, and red light and green light may be emitted respectively. The blue light emitted from the light source may pass through the third region. If desired, an element (a first optical filter 160 or an excitation light blocking layer) configured to block excitation light may be disposed between the light-emitting nanostructure composite layers R and G and the substrate. In an embodiment, the excitation light may include blue light and green light, and a green light blocking filter (not shown) may be added to the third region. The first optical filter or the excitation light blocking layer will be described in more detail herein.

[0253] Such a (display) device may be manufactured by separately manufacturing the above-described stacked structure and an LED or an OLED (e.g., an OLED that emits blue light), and then combining the stacked structure and the LED or the OLED. The (display) device may be manufactured by directly forming the light-emitting nanostructure composite pattern on the LED or the OLED.

[0254] In a color conversion panel or a display device, the substrate may be a substrate including an insulating material. The substrate may include: glass; polymers such as poly(ethylene terephthalate) (PET), poly(ethylene naphthalate) (PEN), etc., polyesters, polycarbonates, or polyacrylates; polysiloxanes (e.g., PDMS, etc.); inorganic materials such as Al2O3, ZnO, etc.; or combinations thereof, but the embodiments are not limited thereto. The thickness of the substrate may be appropriately selected in consideration of the substrate material, but there is no particular limitation. The substrate may be flexible. For light emitted from semiconductor nanoparticles, the substrate may have a transmittance of greater than or equal to about 50%, greater than or equal to about 60%, greater than or equal to about 70%, greater than or equal to about 80%, or greater than or equal to about 90%.

[0255] A wiring layer including thin film transistors, etc. may be formed on the substrate. The wiring layer may further include gate lines, sustain voltage lines, gate insulating films, data lines, source electrodes, drain electrodes, semiconductor layers, protective layers, etc. The detailed structure of the wiring layer may vary according to the embodiments. The gate lines and the sustain voltage lines may be electrically separated from each other, and the data lines may be insulated and cross the gate lines and the sustain voltage lines. The gate electrode, the source electrode, and the drain electrode may form the control terminal, the input terminal, and the output terminal of the thin film transistor, respectively. The drain electrode may be electrically connected to the pixel electrode to be described herein.

[0256] The pixel electrode may be used as an electrode (e.g., an anode) of the display device. The pixel electrode may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The pixel electrode may be formed of a material having a light-blocking property such as gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or titanium (Ti). The pixel electrode may have a two-layer structure in which a transparent conductive material and a material having a light-blocking property are sequentially stacked.

[0257] Between two adjacent pixel electrodes, a pixel defining layer (PDL) may be stacked with the ends of the pixel electrodes to divide the pixel electrodes into pixel units. The pixel defining layer is an insulating layer that can resist at least two pixel electrodes.

[0258] The pixel defining layer may cover a part of the upper surface of the pixel electrode, and the remaining area of the pixel electrode not covered by the pixel defining layer may provide an opening. The organic light-emitting layer to be described herein may be formed on the area defined by the opening.

[0259] The organic light-emitting layer can define each pixel region through the above-mentioned pixel electrode and pixel defining layer. In other words, a pixel region can be defined as an area where an organic light-emitting unit layer is formed, and the organic light-emitting unit layer is in contact with a pixel electrode divided by the pixel defining layer. In the display device according to an embodiment, the organic light-emitting layer can be defined as a first pixel region, a second pixel region, and a third pixel region, and each pixel region can be separated from each other by the pixel defining layer with a predetermined interval left.

[0260] In an embodiment, the organic light-emitting layer can emit a third light belonging to the visible light region or the ultraviolet (UV) region. Each of the first pixel region to the third pixel region of the organic light-emitting layer can emit the third light. In an embodiment, the third light can be light with higher energy in the visible light region, and for example, can be blue light (and optional green light). In an embodiment, all pixel regions of the organic light-emitting layer can be designed to emit the same light, and each pixel region of the organic light-emitting layer can be formed of the same or similar materials, or can exhibit the same or similar properties. Therefore, the process of forming the organic light-emitting layer can be simplified, and the display device can be easily applied to a large-scale / large-area process, for example, manufactured by a large-scale / large-area process. However, the organic light-emitting layer according to an embodiment is not limited thereto, but the organic light-emitting layer can be designed to emit at least two different lights, for example, at least two different colors of light.

[0261] The organic light-emitting layer can include an organic light-emitting unit layer in each pixel region, and in addition to the light-emitting layer, each organic light-emitting unit layer can also include auxiliary layers (for example, a hole injection layer, a hole transport layer, an electron transport layer, etc.).

[0262] The common electrode can be used as the cathode of the display device. The common electrode can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The common electrode can be formed on the organic light-emitting layer and can be integrated with the organic light-emitting layer.

[0263] A planarization layer or a passivation layer (not shown) can be formed on the common electrode. The planarization layer can include an insulating material (for example, transparent) for ensuring electrical insulation from the common electrode.

[0264] In an embodiment, the display device can further include a lower substrate, a polarizing plate disposed below the lower substrate, and a liquid crystal layer disposed between the stacked structure and the lower substrate, and in the stacked structure, a photoluminescent layer (i.e., a light-emitting layer) can be disposed to face the liquid crystal layer. The display device can further include a polarizing plate located between the liquid crystal layer and the light-emitting layer. The light source can further include an LED and a light guide plate (if desired).

[0265] In an embodiment, a display device (for example, a liquid crystal display device) is shown with reference to the drawings. ​is a schematic cross-sectional view showing a liquid crystal display device according to an embodiment. Referring to ​ , the display device of the embodiment may include a liquid crystal panel 200, a polarizing plate 300 disposed below the liquid crystal panel 200, and a backlight unit disposed below the polarizing plate 300.

[0266] The liquid crystal panel 200 may include a lower substrate 210, a stacked structure, and a liquid crystal layer 220 disposed between the stacked structure and the lower substrate. The stacked structure may include a transparent substrate 240, a first optical filter layer 310, a photoluminescent layer 230 including a pattern of a semiconductor nanoparticle polymer composite, and a second optical filter layer 311.

[0267] The lower substrate 210 (also referred to as an array substrate) may be a transparent insulating material substrate. The substrate may be as described herein. A wiring board 211 may be disposed on the upper surface of the lower substrate 210. The wiring board 211 may include a plurality of gate lines (not shown) and data lines (not shown) defining pixel regions, thin film transistors disposed adjacent to the crossing regions of the gate lines and the data lines, and pixel electrodes for each pixel region, but the embodiment is not limited thereto. Details of such a wiring board are not particularly limited.

[0268] The liquid crystal layer 220 may be disposed on the wiring board 211. The liquid crystal panel 200 may include alignment layers 221 above and below the liquid crystal layer 211, and the alignment layers 221 are used to initially align the liquid crystal material included in the liquid crystal layer 211. Details of the liquid crystal layer and the alignment layer (for example, liquid crystal material, alignment layer material, method of forming the liquid crystal layer, thickness of the liquid crystal layer, etc.) are not particularly limited.

[0269] The polarizing plate 300 may be disposed below the lower substrate. The material and structure of the polarizing plate 300 are not particularly limited. The backlight unit (for example, emitting blue light) may be disposed below the polarizing plate 300. An upper optical element or the polarizing plate 300 may be disposed between the liquid crystal layer 220 and the transparent substrate 240, but is not limited thereto. For example, an upper polarizing plate may be disposed between the liquid crystal layer 220 and the photoluminescent layer 230. The polarizing plate may be any polarizer that can be used in a liquid crystal display device. The polarizing plate may be a triacetyl cellulose (TAC) having a thickness less than or equal to about 200 μm, but is not limited thereto. In another embodiment, the upper optical element may be a coating that controls the refractive index without a polarizing function.

[0270] The backlight unit may include a light source 110. The light source may emit blue light or white light. The light source may include, but is not limited to, a blue LED, a white LED, a white OLED, or a combination thereof.

[0271] The backlight unit may further include a light guide plate 120. In an embodiment, the backlight unit may be an edge type. For example, the backlight unit may include a reflector (not shown), a light guide plate (not shown) disposed on the reflector and providing a planar light source to the liquid crystal panel 200, and / or at least one optical sheet (not shown) (e.g., a diffusion plate, a prism sheet, etc.) on the light guide plate, but the present disclosure is not limited thereto. The backlight unit may not include a light guide plate. In an embodiment, the backlight unit may be direct-lit. For example, the backlight unit may have a reflector (not shown) and a plurality of fluorescent lamps located on the reflector at regular intervals, or may have an LED operation substrate on which a plurality of light-emitting diodes may be disposed, a diffusion plate on the plurality of light-emitting diodes, and optionally at least one optical sheet. Details of such a backlight unit (e.g., each component of the light-emitting diode, fluorescent lamp, light guide plate, various optical sheets, and reflector) are known and are not particularly limited.

[0272] The black matrix 241 may be disposed under the transparent substrate 240 and may have openings and hide the gate lines, data lines, and thin film transistors of the wiring board on the lower substrate. For example, the black matrix 241 may have a lattice shape. The photoluminescent layer 230 may be disposed in the openings of the black matrix 241 and have a nanoparticle-polymer composite pattern including a first region R configured to emit a first light (e.g., red light), a second region G configured to emit a second light (e.g., green light), and a third region B configured to emit / transmit a third light (e.g., blue light). If needed, the photoluminescent layer may further include at least a fourth region. The fourth region may include quantum dots that emit light of a color different from the light emitted from the first region to the third region (e.g., cyan light, magenta light, and yellow light).

[0273] In the photoluminescent layer 230, the patterned sections may correspond and repeat with the pixel regions formed on the lower substrate. The transparent common electrode 231 may be disposed on the photoluminescent layer 230.

[0274] The third region (B) configured to emit / transmit blue light may be a transparent color filter that does not change the emission spectrum of the light source. In this case, the blue light emitted from the backlight unit may enter in a polarized state and may be emitted through the polarizer and the liquid crystal layer as it is. If needed, the third region may include quantum dots that emit blue light.

[0275] As described herein, if necessary, the display device or the light-emitting device according to an embodiment may further include an excitation light blocking layer or a first optical filter layer (hereinafter, referred to as the first optical filter layer). The first optical filter layer may be disposed between the bottom surfaces of the first region R and the second region G and the substrate (e.g., the upper substrate 240), or may be disposed on the upper surface of the substrate. The first optical filter layer may be a sheet having an opening in a portion corresponding to the pixel region (third region) that displays blue, and thus may be formed in a portion corresponding to the first region and the second region. That is, as ​ , ​ and ​ and / or shown in FIG. 7, the first optical filter layer may be integrally formed at a position other than the position overlapping with the third region, but is not limited thereto. Two or more first optical filter layers may be separated from each other at positions overlapping with the first region, the second region, and optionally the third region. When the light source includes a green light-emitting device, a green light blocking layer may be disposed on the third region.

[0276] The first optical filter layer may block light in a predetermined wavelength region in the visible light region, for example, and may transmit light in other wavelength regions. For example, it may block blue light (or green light) and may transmit light other than blue light (or green light). The first optical filter layer may transmit, for example, green light, red light, and / or yellow light, which is a mixed color of green light and red light. The first optical filter layer may transmit blue light and block green light, and may be disposed on the blue light-emitting pixel.

[0277] The first optical filter layer may substantially block excitation light and transmit light in a desired wavelength region. The transmittance of the first optical filter layer for light in the desired wavelength range may be greater than or equal to about 70%, greater than or equal to about 80%, greater than or equal to about 90%, or even about 100%.

[0278] A first optical filter layer configured to selectively transmit red light may be disposed at a position overlapping with the red light-emitting section, and a first optical filter layer configured to selectively transmit green light may be disposed at a position overlapping with the green light-emitting section. The first optical filter layer may include: a first filter region that blocks (e.g., absorbs) blue light and red light and selectively transmits light in a predetermined range (e.g., greater than or equal to about 500 nm, greater than or equal to about 510 nm, or greater than or equal to about 515 nm to less than or equal to about 550 nm, less than or equal to about 545 nm, less than or equal to about 540 nm, less than or equal to about 535 nm, less than or equal to about 530 nm, less than or equal to about 525 nm, or less than or equal to about 520 nm); a second filter region that blocks (e.g., absorbs) blue light and green light and selectively transmits light in a predetermined range (e.g., greater than or equal to about 600 nm, greater than or equal to about 610 nm, or greater than or equal to about 615 nm to less than or equal to about 650 nm, less than or equal to about 645 nm, less than or equal to about 640 nm, less than or equal to about 635 nm, less than or equal to about 630 nm, less than or equal to about 625 nm, or less than or equal to about 620 nm); or the first filter region and the second filter region. In an embodiment, the light source may emit a mixed light of blue and green, and the first optical filter layer may further include a third filter region that selectively transmits blue light and blocks green light.

[0279] The first filter region may be disposed at a position overlapping with the green light-emitting section. The second filter region may be disposed at a position overlapping with the red light-emitting section. The third filter region may be disposed at a position overlapping with the blue light-emitting section.

[0280] The first filter region, the second filter region, and the optional third filter region may be optically isolated. Such a first optical filter layer may help improve the color purity of the display device.

[0281] The display device may further include a second optical filter layer (e.g., a recycling layer for red / green or yellow light), which is disposed between the photoluminescent layer and the liquid crystal layer (e.g., between the photoluminescent layer and the upper polarizer), transmits at least a part of the third light (excitation light), and reflects at least a part of the first light and / or the second light. The first light may be red light, the second light may be green light, and the third light may be blue light. The second optical filter layer may transmit only the third light (B) in the blue light wavelength region less than or equal to about 500 nm, and the light in the wavelength region greater than about 500 nm (which is green light (G), yellow light, red light (R), etc.) may not pass through the second optical filter layer and may be reflected. The reflected green light and red light may pass through the first region and the second region to be emitted to the outside of the display device.

[0282] The second optical filter layer or the first optical filter layer may be formed as an integral layer having a relatively flat surface.

[0283] The first optical filter layer may include a polymer film containing a dye and / or pigment that absorbs light in the wavelength to be blocked. The second optical filter layer or the first optical filter layer may include a single layer having a low refractive index and may be, for example, a transparent film having a refractive index of less than or equal to about 1.4, less than or equal to about 1.3, or less than or equal to about 1.2. The second optical filter layer or the first optical filter layer having a low refractive index may include, for example, porous silica, porous organic material, porous organic-inorganic composite, etc. or a combination thereof.

[0284] The first optical filter layer or the second optical filter layer may include a plurality of layers having different refractive indices. The first optical filter layer or the second optical filter layer may be formed by laminating two layers having different refractive indices. For example, the first optical filter layer / second optical filter layer may be formed by alternately laminating a material having a high refractive index and a material having a low refractive index.

[0285] In an embodiment, the electronic device may include a light-emitting device (e.g., an electroluminescent device) containing the above-described nanoparticles. ​ is a schematic cross-sectional view of a light-emitting device (e.g., an electroluminescent device) according to an embodiment. Referring to ​ , the light-emitting device may include: an anode 1 and a cathode 5 facing each other; a quantum dot light-emitting layer 3 disposed between the anode and the cathode and including a plurality of quantum dots; and a hole auxiliary layer 2 located between the anode and the quantum dot light-emitting layer. The hole auxiliary layer may further include a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), or a combination thereof. The hole auxiliary layer may include any organic / inorganic material having hole characteristics. The quantum dot light-emitting device may further include an electron auxiliary layer 4 located between the cathode and the quantum dot light-emitting layer. The electron auxiliary layer may include an electron injection layer (EIL), an electron transport layer (ETL), a hole blocking layer (HBL), or a combination thereof. The electron auxiliary layer may include any organic / inorganic material having electron properties.

[0286] Hereinafter, exemplary embodiments will be described in further detail with reference to examples. However, the embodiments of the present disclosure are not limited to these examples.

[0287] Examples Analysis method [1] Photoluminescence analysis The photoluminescence (PL) spectra of the fabricated nanoparticles and the composites including the nanoparticles were obtained using a Hitachi F-7000 spectrophotometer at an excitation wavelength of 450 nm.

[0288] [2] Blue light absorption rate, quantum efficiency, and photoconversion efficiency (CE) of the composite Using an integrating sphere or integrating hemisphere of an absolute quantum efficiency measurement device (e.g., QE-2100, Otsuka Electronics Co., Ltd.), measure the amount of incident light (B) with a wavelength of 450 nm. Subsequently, place the semiconductor nanoparticle (quantum dot, QD)-polymer composite in the integrating (semi)sphere, and then irradiate the incident light to measure the amount of the first light (A) from the composite and the amount of the incident light (B') passing through the composite, respectively.

[0289] Using the measured amounts, calculate the incident light absorption rate, photoconversion efficiency (e.g., internal quantum efficiency), and quantum efficiency (e.g., external quantum efficiency) according to Equation 2 to Equation 4: Equation 2: Incident light absorption rate (%) = [(B - B') / B] × 100% Equation 3: Internal quantum efficiency (%) = [A / (B - B')] × 100% Equation 4: External quantum efficiency (%) = [A / B] × 100% Wherein, in Equation 2 to Equation 4, A is the amount of the first light emitted from the first composite, B is the amount of the incident light provided to the first composite, and B' is the amount of the incident light passing through the first composite.

[0290] [3] Process retention percentage Heat-treat the semiconductor nanoparticle-polymer composite obtained by polymerization at 180 °C for 30 minutes, and measure the process retention percentage according to the following equation (Equation 5): Equation 5 Process retention percentage (%) = [IQE2 / IQE1] × 100% Wherein, in Equation 5, IQE1 is the internal quantum efficiency of the semiconductor nanoparticle-polymer composite after polymerization and before heat treatment, and IQE2 is the internal quantum efficiency of the semiconductor nanoparticle-polymer composite after heat treatment.

[0291] [4] ICP analysis Perform inductively coupled plasma atomic emission spectrometry (ICP-AES) using Shimadzu ICPS-8100 (Shimadzu ICPS-8100).

[0292] Example 1 Sulfur was dissolved in oleylamine to prepare a 1 molar (M) solution containing a sulfur precursor (hereinafter abbreviated as "sulfur precursor"). In a 100 mL reaction flask, octadecene (ODE), oleylamine, silver acetate, indium acetate, and gallium acetylacetonate were added and vacuum treated at room temperature for 10 minutes. Nitrogen was introduced into the reaction flask, and the sulfur precursor and dodecanethiol were added to the flask. The flask was heated at a reaction temperature of 210 °C and reacted for 60 minutes. After the temperature of the flask was lowered to 180 °C, trioctylphosphine (TOP) was added to the flask, and then hexane and ethanol were added to promote precipitation. The obtained first semiconductor nanocrystals were separated and recovered by centrifugation and redispersed in toluene. The molar ratio of the silver precursor, indium precursor, gallium precursor, and sulfur precursor used was 0.8:0.95:1.1:4.

[0293] Gallium bromide and gallium chloride were dissolved in a trioctylphosphine solution (GaCl3:GaBr3 = 0.25:0.75, molar ratio) to prepare a 1 M solution containing a gallium precursor (hereinafter referred to as gallium precursor). A silver compound (silver acetate, 0.06 M) was dispersed in oleylamine to prepare a silver compound dispersion.

[0294] Dimethylthiourea (DMTU), oleylamine, and octadecene were placed in a reaction flask and then vacuum treated at 120 °C for 10 minutes. After nitrogen was introduced into the reaction flask, the flask was heated at 240 °C, and the gallium precursor, the first semiconductor nanocrystals, and the silver compound dispersion were added to the reaction flask. Then, the reaction flask was heated to 260 °C (second temperature) and reacted for about 200 minutes (first time). The reaction solution was cooled to 180 °C, trioctylphosphine was added to the flask, and the reaction mixture was cooled to room temperature. A poor solvent (i.e., antisolvent) was added to the flask to promote the precipitation of semiconductor nanoparticles, and the semiconductor nanoparticles were separated and recovered by centrifugation and redispersed in toluene.

[0295] The molar ratio of the gallium precursor to the sulfur precursor used was 16.8:22.4. The silver compound was used in an amount of about 5 mol% relative to the gallium precursor.

[0296] The fabricated semiconductor nanoparticles were subjected to ICP-AES analysis and photoluminescence analysis, and the results are summarized in Tables 1 and 2.

[0297] Example 2 Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that the molar ratio between the precursors used in the formation of the first semiconductor nanocrystals was changed to Ag:In:Ga:S = 0.8:1.0:1.0:4, and the reaction temperature and reaction time were set to 260 °C for 140 minutes and then 280 °C for 60 minutes.

[0298] ICP-AES analysis and photoluminescence analysis were performed on the fabricated semiconductor nanoparticles, and the results are summarized in Tables 1 and 2.

[0299] Comparative Example 1 Semiconductor nanoparticles were prepared in a similar manner to Example 1, except that gallium chloride was used instead of gallium bromide as the gallium precursor, and the reaction temperature and reaction time were adjusted to 260 °C for 70 minutes.

[0300] ICP-AES analysis and photoluminescence analysis were performed on the fabricated semiconductor nanoparticles, and the results are summarized in Tables 1 and 2.

[0301] Comparative Example 2 Semiconductor nanoparticles were prepared in a similar manner to Example 1, except that gallium iodide was used instead of gallium bromide as the gallium precursor, the amount of the silver compound was doubled, and the reaction temperature and reaction time were adjusted to 260 °C and 130 minutes, respectively.

[0302] ICP-AES analysis and photoluminescence analysis were performed on the fabricated semiconductor nanoparticles, and the results are summarized in Tables 1 and 2.

[0303] Table 1

[0304] Table 2

[0305] Relative QY: Absolute quantum yield (QY) of a given semiconductor nanoparticle / Absolute quantum yield (QY) of Comparative Example 1 Trap emission ratio: Percentage of the spectral area in the wavelength range of emission peak wavelength + 50 nm or longer in the total area of the photoluminescence spectrum As shown in the results of Table 2, the semiconductor nanoparticles of the examples exhibited significantly improved luminescence characteristics compared to the semiconductor nanoparticles of the comparative examples.

[0306] Experimental Example 1 Toluene solutions of the semiconductor nanoparticles prepared in each of Example 1, Example 2, Comparative Example 1, and Comparative Example 2 were mixed with a solution of a binder (a quaternary copolymer of methacrylic acid, benzyl methacrylate, 2-hydroxyethyl methacrylate, and styrene, having an acid value of 130 mg potassium hydroxide per gram (KOH / g) and a molecular weight of 8000 g / mol) (in propylene glycol monomethyl ether acetate (PGMEA) at a concentration of 30 wt%) to obtain semiconductor nanoparticle-binder dispersions, respectively.

[0307] To each semiconductor nanoparticle - binder dispersion, a hexaacrylate having the following structure as a photo - polymerizable monomer, ethylene glycol bis(3 - mercaptopropionate) (hereinafter, 2T), an oxime - ester compound as an initiator, TiO2 as a light diffuser, and PGMEA were added and mixed together to provide a composition.

[0308]

[0309]

[0310] The compositions thus prepared each contained 20 wt% of semiconductor nanoparticles based on their total solid weight.

[0311] Each composition was spin - coated on a glass substrate at 600 revolutions per minute (rpm) for 5 seconds to obtain a film. The film thus obtained was pre - baked (PRB) at 100 °C. The pre - baked film was irradiated with light (at a wavelength of 395 nm and an intensity of 4 J) to obtain a nanoparticle - polymer composite film (having a thickness of about 7 μm).

[0312] It was confirmed that the composites containing the exemplary semiconductor nanoparticles all exhibited a light absorption rate of more than 90% of the incident light. The photo - conversion efficiency (internal quantum efficiency) of each of the composites containing the exemplary and comparative - example semiconductor nanoparticles was measured, and the results are summarized in Table 3 below.

[0313] For each of the obtained films, the relative internal quantum efficiency and relative process retention after POB were also measured. The results are shown in Table 3 below.

[0314] Table 3

[0315] Relative internal quantum efficiency after POB (%): [Internal quantum efficiency of a given composite after POB / Internal quantum efficiency of the composite of Comparative Example 1 after POB] × 100% Relative process retention (%): [Process retention percentage of a given composite / Process retention percentage of the composite of Comparative Example 1] × 100% It was confirmed from the results in Table 3 that, compared with the semiconductor nanoparticles of the comparative examples, the semiconductor nanoparticles of the examples exhibited improved luminescence efficiency and relatively increased process retention (i.e., enhanced stability) in the composites.

[0316] Example 3 Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that the amounts of the Ag compound and DMTU were increased by 2.76 times and 1.5 times, respectively, and the amount of the first semiconductor nanocrystal used was reduced by half.

[0317] ICP-AES analysis was performed on the fabricated semiconductor nanoparticles, and the results are summarized in Table 4.

[0318] Example 4 Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that the molar ratio of the precursors to be used in the synthesis of the first semiconductor nanocrystal was adjusted to Ag:In:Ga:S = 0.8:0.5:1.1:4, and the reaction temperature and reaction time were adjusted to 260 °C and 120 minutes, respectively.

[0319] ICP-AES analysis was performed on the fabricated semiconductor nanoparticles, and the results are summarized in Table 4.

[0320] Example 5 Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that the amount of the Ag compound was increased by 4.14 times, the amount of the core was reduced to one-fourth, and only GaBr3 (without GaCl3) was used as the gallium precursor.

[0321] ICP-AES analysis was performed on the fabricated semiconductor nanoparticles, and the results are summarized in Table 4.

[0322] Comparative Example 3 Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that gallium chloride was used instead of gallium bromide as the gallium precursor, the amount of DMTU was increased by 1.6 times, and the reaction temperature and reaction time were adjusted to 260 °C and 130 minutes, respectively.

[0323] ICP-AES analysis was performed on the fabricated semiconductor nanoparticles, and the results are summarized in Table 4.

[0324] Table 4

[0325] Experimental Example 2: Semiconductor nanoparticle-polymer composite films were prepared in the same manner as in Experimental Example 1, except that toluene solutions of the semiconductor nanoparticles obtained in Example 3, Example 4, Example 5, and Comparative Example 3 were used, respectively. For the obtained composite films, the process retention percentage after POB and the increase in trap emission were evaluated, and the results are summarized in Table 5 below.

[0326] Table 5

[0327] The increase in trap emission after POB (%) was calculated as follows: [Trap emission in the photoluminescence spectrum of the complex after POB / Trap emission in the semiconductor nanoparticle solution] × 100% It was confirmed from the results in Table 5 that, compared with the semiconductor nanoparticles of the comparative example, the semiconductor nanoparticles of the example showed improved stability within the complex, and the increase in trap emission was also suppressed.

[0328] Although the present disclosure has been described in connection with what is presently considered to be practical embodiments, it will be understood that the subject matter is not limited to the disclosed exemplary embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A semiconductor nanoparticle comprising silver, indium, gallium, and sulfur, Among them, In the semiconductor nanoparticle, the molar ratio of gallium to indium is greater than or equal to 6.7:1 and less than or equal to 40:1, and the molar ratio of silver to indium is greater than or equal to 5:1 and less than or equal to 30:

1. Wherein, the semiconductor nanoparticle is configured to emit light, and the full width at half maximum of the emission spectrum of the light is greater than or equal to 10 nm and less than or equal to 50 nm.

2. The semiconductor nanoparticle according to claim 1, wherein, The semiconductor nanoparticle includes a first semiconductor nanocrystal and a second semiconductor nanocrystal. The first semiconductor nanocrystal includes silver, indium, gallium, and sulfur, and the second semiconductor nanocrystal includes silver, gallium, and sulfur.

3. The semiconductor nanoparticle according to claim 1, wherein, In the semiconductor nanoparticle, the molar ratio of gallium to indium is greater than or equal to 10.5:1 and less than or equal to 37:1, and the molar ratio of silver to indium is greater than or equal to 7:1 and less than or equal to 25:

1.

4. The semiconductor nanoparticle according to claim 1, wherein, In the semiconductor nanoparticle, the molar ratio of gallium to indium is greater than or equal to 15:1 and less than or equal to 35:1, and the molar ratio of silver to indium is greater than or equal to 10:1 and less than or equal to 17:

1.

5. The semiconductor nanoparticle according to claim 1, wherein, In the semiconductor nanoparticle, the molar ratio of the sum of indium and gallium to silver is greater than or equal to 1.3:1 and less than or equal to 1.65:

1.

6. The semiconductor nanoparticles according to claim 1, wherein, In the semiconductor nanoparticle: The molar ratio of indium to sulfur is greater than or equal to 0.005:1 and less than 0.1:1; or The molar ratio of gallium to sulfur is greater than or equal to 0.3:1 and less than or equal to 0.55:1; or The molar ratio of silver to sulfur is greater than or equal to 0.33:1 and less than or equal to 0.45:

1.

7. The semiconductor nanoparticles according to claim 1, wherein, In the semiconductor nanoparticle: The molar ratio of silver to the sum of silver, indium, and gallium is greater than or equal to 0.31:1 and less than or equal to 0.42:1; or The molar ratio of sulfur to the sum of silver, indium, and gallium is greater than or equal to 0.8:1 and less than or equal to 1.12:

1.

8. The semiconductor nanoparticle according to claim 1, wherein, In the semiconductor nanoparticle, the molar ratio of gallium to indium is greater than or equal to 20:

1.

9. The semiconductor nanoparticle according to claim 1, wherein, The semiconductor nanoparticle has a peak emission wavelength greater than or equal to 500 nm and less than or equal to 580 nm and a quantum efficiency greater than or equal to 40%.

10. The semiconductor nanoparticle according to claim 1, wherein, In ultraviolet-visible absorption spectroscopy analysis, the semiconductor nanoparticle exhibits a ratio of the absorbance at 350 nm to the absorbance at 370 nm greater than or equal to 0.1:1 and less than or equal to 1.2:

1.

11. A method for preparing the semiconductor nanoparticle according to claim 1, the method comprising: Combine a first semiconductor nanocrystal, a sulfur precursor, a gallium precursor, and a medium, as well as an optional organic ligand, an optional silver compound, or a combination of an optional organic ligand and a silver compound, to provide a reaction mixture, where the first semiconductor nanocrystal includes silver, a Group 13 element, and a chalcogen element, the gallium precursor includes gallium bromide, and the medium includes an organic solvent; and Heat the reaction mixture to provide semiconductor nanoparticles.

12. The method according to claim 11, wherein, The method further includes adding a silver compound to the medium.

13. The method according to claim 12, wherein, The silver compound is added to the medium in an amount greater than or equal to 1 mole percent and less than or equal to 50 mole percent.

14. The method according to claim 12, wherein The silver compound includes silver carboxylate, silver acetylacetonate, silver halide, or a combination thereof.

15. An ink composition, comprising: The semiconductor nanoparticles according to claim 1; and a liquid carrier.

16. A semiconductor nanoparticle composite, wherein, The semiconductor nanoparticle composite includes a matrix and the semiconductor nanoparticles according to claim 1 dispersed in the matrix.

17. The semiconductor nanoparticle composite according to claim 16, wherein The semiconductor nanoparticle composite exhibits an internal quantum efficiency greater than or equal to 50%, and the internal quantum efficiency is defined by Equation 2: Equation 2 Internal quantum efficiency = [A / (B - B')] × 100% Where: A: The amount of the first light emitted from the semiconductor nanoparticle composite B: The amount of incident light irradiated B': The amount of the irradiated incident light passing through the semiconductor nanoparticle composite.

18. A color conversion structure, wherein, The color conversion structure includes a color conversion layer and an optional partition wall. The color conversion layer includes a color conversion region, and the partition wall defines each region of the color conversion layer. Wherein, the color conversion region includes a first region corresponding to a first pixel, and the first region includes the semiconductor nanoparticles according to claim 1.

19. An electronic device, comprising the semiconductor nanoparticles according to claim 1.

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