Wafer-level inertial sensor testing method and system

Abstract

The invention provides a wafer-level inertial sensor testing method and system, and relates to the technical field of wafer detection, and the method comprises the steps: obtaining the information of a to-be-tested wafer, and determining a matched testing configuration according to the information of the to-be-tested wafer; establishing a coordinate system, controlling the probe to be in contact with all the core particles of the wafer to be detected in sequence, and generating coordinates of the corresponding core particles in sequence until all the core particles on the wafer to be detected are traversed; controlling the probe to carry out multiple detection processes on all the core particles, and generating a wafer graph and outputting a detection report according to the detection data and the detection result of each detection process; wherein when the next detection process is carried out, the test function of the probe card is automatically switched, and the core particles of which the performance is confirmed not to meet the requirement in the previous detection process are not detected any more. According to the method, automatic detection of the wafer level sensor can be achieved, the detection report and the wafer graph are generated according to the detection result, and the problems that existing manual detection is low in efficiency and prone to occurrence of detection errors can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer testing, and particularly relates to a method and system for testing wafer-level inertial sensors. Background Art

[0002] In the detection of wafer-level gyroscopes and accelerometers, it is necessary to perform needle testing on each die on the wafer. Multiple special probe cards are used to contact the contacts on the die to transmit test signals to test their electrical characteristics. Currently, manual detection, recording, and screening of the electrical performance of wafers are often carried out by using a tester manually. When determining whether a die has been tested and whether the test has passed, it is necessary to manually mark and sequentially search and compare in all the stored test results. Therefore, the process of wafer testing takes a long time, resulting in low execution efficiency and prone to operation errors; it is difficult to search and compare test results, and the wafer detection time is long; when performing different electrical performance tests on wafers, it is necessary to replace the corresponding probe cards, and when manually detecting, it is also necessary to search and compare according to the marks for the already problematic dies, with low efficiency and prone to errors. Summary of the Invention

[0003] The purpose of the present invention is to provide a method and system for testing wafer-level inertial sensors, aiming to achieve automatic detection of wafer-level inertial sensors, improve detection efficiency, and reduce the occurrence of detection errors. The specific technical solutions are as follows: A method for testing wafer-level inertial sensors, the method comprising the following steps: S100. Obtain information of the wafer to be tested, and determine a matching test configuration according to the information of the wafer to be tested; S200. Establish a coordinate system, control the probe to sequentially contact all the dies of the wafer to be tested, and sequentially generate the coordinates of the corresponding dies until all the dies on the wafer to be tested are traversed; S300. Control the probe to perform multiple detection processes on all the dies, generate a wafer map and output a detection report according to the detection data and results of each detection process; wherein, when performing the next detection process, the test function of the probe card is automatically switched, and the dies whose performance has been confirmed not to meet the requirements in the previous detection process are no longer detected.

[0004] Further, in the step S100, the wafer to be tested is placed on the test bench, and the information of the wafer to be tested is obtained.

[0005] Further, the information of the wafer to be tested includes the production batch and the wafer model.

[0006] Further, according to the obtained information of the wafer to be tested, the test information of the wafer to be tested is matched in the system, the test bench is configured with parameters, and a control instruction is transmitted to the test bench. After the test bench is initialized and parameter-configured, the wafer to be tested is tested.

[0007] Further, the step S200 includes: determining a target die of the wafer to be tested, establishing a coordinate system with the target die as the base point, the coordinate system covering all surface parts of the wafer to be tested, starting from the target die, controlling the probe to contact all dies in sequence, indexing each die on the wafer to be tested in sequence, and generating corresponding coordinates in sequence until all dies on the wafer to be tested are traversed.

[0008] Further, in the step S300, there are two detection processes: the first detection process is capacitance performance detection and the second detection process is resonant frequency performance detection.

[0009] Further, in the first detection process, the probe is controlled to detect the capacitance performance of the die, including capacitance range and capacitance symmetry; according to the detected capacitance performance data, it is compared with the standard value, the capacitance performance data is recorded, the dies that pass the detection are screened out; according to the obtained capacitance performance data, a first wafer map is drawn, and the preliminary test results of the dies are judged according to the comparison results, and the coordinates of the problem dies are marked.

[0010] Further, in the second detection process, the probe card test function is automatically switched, and the second resonant frequency range of the die is detected with reference to the coordinate system. If a die at a certain coordinate has been confirmed to be damaged in the first detection process, then this die is automatically skipped during the second detection process and no longer detected; the final detection data information is transmitted to the system, and the final detection data, detection results and corresponding second wafer map are automatically generated.

[0011] Further, in the step S300, when the final detection report is output, according to the detection times of each die, the test results in each detection process, and the position coordinates, the test information of each die is drawn and displayed in the wafer map.

[0012] The present invention also provides a wafer-level inertial sensor test system for implementing the wafer-level inertial sensor method as described above, including: A test bench for placing the wafer to be tested, obtaining information of the wafer to be tested, and detecting the dies of the wafer to be tested; A probe card unit for automatically switching the probe card test function; A signal processing unit for uploading the information of the wafer to be tested, the detected die coordinates, and the detection data of each detection process to the host computer; The host computer is used to determine a matching test configuration according to the information of the wafer to be tested, control the test bench to make the probe contact the die of the wafer to be tested to detect the coordinates of the die or test the die, and obtain a detection result, generate a wafer map for each detection process, and output a final detection report according to the detection data of each detection process.

[0013] A wafer-level inertial sensor testing method and system provided by the present invention have the following beneficial effects: The present invention obtains the information of the wafer to be tested, determines a matching test configuration according to the information of the wafer to be tested; establishes a coordinate system, controls the probe to sequentially contact all the dies of the wafer to be tested, and sequentially generates the coordinates of the corresponding dies until all the dies on the wafer to be tested are traversed; controls the probe to perform multiple detection processes on all the dies, generates a wafer map and outputs a detection report according to the detection data and detection results of each detection process; wherein, when performing the next detection process, the test function of the probe card is automatically switched, and the dies whose performance has been confirmed not to meet the requirements in the previous detection process are no longer detected; it can realize the automatic detection of wafer-level sensors, generate a detection report and a wafer map according to the detection results, and be used for the screening and rejection of subsequent packaging processes, and can solve the problems of low efficiency and easy detection errors in the existing manual detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a schematic flow chart of a wafer-level inertial sensor testing method provided by the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0015] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings provided by the present invention. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are all in a very simplified form and use non-precise scales, only for the purpose of facilitating and clearly assisting in explaining the objectives of the embodiments of the present invention.

[0016] Embodiment 1: This embodiment provides a wafer-level inertial sensor testing method. Refer to Figure 1 as shown, the method includes the following steps: S100. Obtain the information of the wafer to be tested, and determine a matching test configuration according to the information of the wafer to be tested.

[0017] In one embodiment, the wafer to be tested is placed on the test bench, and the information of the wafer to be tested, such as the production batch and wafer model, is obtained.

[0018] Further, according to the obtained information of the wafer to be tested, match the test information of the wafer to be tested in the system, configure the parameters of the test bench, and transmit a control instruction to the test bench. After the test bench is initialized and parameter-configured, it tests the wafer to be tested.

[0019] S200. Establish a coordinate system, control the probe to sequentially contact all die on the wafer to be tested, and sequentially generate the coordinates of the corresponding die until all die on the wafer to be tested are traversed.

[0020] In one embodiment, determine a target die of the wafer to be tested, establish a coordinate system with the target die as the base point. The coordinate system covers all surface parts of the wafer to be tested. Starting from the target die, control the probe to sequentially contact all die, index each die on the wafer to be tested in sequence, and sequentially generate the corresponding coordinates until all die on the wafer to be tested are traversed.

[0021] S300. Control the probe to perform a multi-channel detection process on all die, generate a wafer map and output a detection report according to the detection data and results of each detection process; wherein, when performing the next detection process, automatically switch the test function of the probe card, and the die whose performance has been confirmed not to meet the requirements in the previous detection process will no longer be detected.

[0022] In one embodiment, in S300, it includes two detection processes: the first detection process is capacitance performance detection and the second detection process is resonance frequency performance detection.

[0023] In a preferred embodiment, in the first detection process, control the probe to detect the capacitance performance of the die, including capacitance range and capacitance symmetry; compare the detected capacitance performance data with the standard value, record the capacitance performance data, screen out the die that pass the detection; draw a first wafer map according to the obtained capacitance performance data, and judge the preliminary test results of the die according to the comparison results, and mark the coordinates of the problem die.

[0024] In a preferred embodiment, in the second detection process, automatically switch the test function of the probe card, and perform a second detection of the resonance frequency range of the die with reference to the coordinate system. If a die at a certain coordinate has been confirmed to be damaged in the first detection process, it will be automatically skipped and no longer detected during the second detection process; transmit the final detection data information to the system, and automatically generate the final detection data, results and the corresponding second wafer map.

[0025] In a preferred embodiment, when outputting the final detection report, draw and display the test information of each die in the wafer map according to the detection times of each die, the test results in each detection process, and the position coordinates.

[0026] The final test report is used for subsequent processes such as packaging. In the subsequent process of wafer dicing, wafers with problems can be screened and discarded according to the test report.

[0027] The wafer-level inertial sensor testing method provided by the present invention includes: obtaining information of a wafer to be tested, determining a matching test configuration according to the information of the wafer to be tested; establishing a coordinate system, controlling a probe to sequentially contact all dielets of the wafer to be tested, and sequentially generating coordinates of corresponding dielets until all dielets on the wafer to be tested are traversed; controlling the probe to perform multiple detection processes on all dielets, generating a wafer map and outputting a test report according to the detection data and results of each detection process; wherein, when performing the next detection process, the test function of the probe card is automatically switched, and dielets whose performance has been confirmed not to meet the requirements in the previous detection process are no longer detected; it can realize the automatic detection of wafer-level sensors, generate a test report and a wafer map according to the detection results, and be used for the screening and discarding in subsequent packaging processes, and can solve the problems of low efficiency and easy detection errors in the existing manual detection.

[0028] Embodiment 2: This embodiment provides a wafer-level inertial sensor testing system for implementing the foregoing wafer-level inertial sensor method, including: A test bench for placing a wafer to be tested, obtaining information of the wafer to be tested, and detecting dielets of the wafer to be tested; A probe card unit for automatically switching the test function of the probe card; [[ID=--13]] A signal processing unit for uploading the information of the wafer to be tested, the coordinates of the detected dielets, and the detection data of each detection process to a host computer; A host computer for determining a matching test configuration according to the information of the wafer to be tested, controlling the test bench to make the probe contact the dielets of the wafer to be tested to detect the coordinates of the dielets or test the dielets, and obtaining a detection result, generating a wafer map of each detection process, and outputting a final test report according to the detection data of each detection process.

[0029] The working principle of the wafer-level inertial sensor testing system of this embodiment is as follows: The host computer is connected to the test bench, the probe card unit, and the signal processing unit. The signal processing unit uploads the capacitance range, capacitance symmetry, and resonant frequency range data of the detected wafer to the host computer. The host computer records the received data, draws a wafer map, and marks normal dielets and damaged dielets with different colors according to the detection results for distinction. The recorded data information can also be used for the analysis of wafer defects, etc., and the analysis results of process problems are output. At the same time, the system can also store the detection data for convenient search and traceability. The testing system can realize an automated detection process, reducing the time cost and labor cost of manual participation.

[0030] Those skilled in the art should understand that the present invention can be implemented in many other specific forms without departing from the spirit and scope of the present invention. Based on the embodiments of the present invention, any changes and modifications made by those of ordinary skill in the art of the present invention according to the above disclosure shall fall within the protection scope of the claims.

Claims

1. A wafer-level inertial sensor testing method, characterized in that, The method includes the following steps: S100. Obtain information of the wafer to be tested, and determine a matching test configuration according to the information of the wafer to be tested; S200. Establish a coordinate system, control the probe to sequentially contact all die of the wafer to be tested, and sequentially generate coordinates of the corresponding die until all die on the wafer to be tested are traversed; S300. Control the probe to perform a multi-channel detection process on all die, generate a wafer map and output a detection report according to the detection data and results of each detection process; wherein, when performing the next detection process, the test function of the probe card is automatically switched, and the die whose performance has been confirmed not to meet the requirements in the previous detection process will no longer be detected.

2. The wafer-level inertial sensor testing method according to claim 1, characterized in that, In step S100, place the wafer to be tested on the test bench and obtain information of the wafer to be tested.

3. The wafer-level inertial sensor testing method according to claim 2, wherein The information of the wafer to be tested includes the production batch and the wafer model.

4. The wafer-level inertial sensor testing method according to claim 2, wherein According to the obtained information of the wafer to be tested, match the test information of the wafer to be tested from the system, configure parameters for the test bench, and transmit a control instruction to the test bench. After the test bench is initialized and parameter-configured, it tests the wafer to be tested.

5. The wafer-level inertial sensor testing method according to claim 1, wherein Step S200 includes: determining a target die of the wafer to be tested, establishing a coordinate system with the target die as the base point, where the coordinate system covers all surface parts of the wafer to be tested, starting from the target die, controlling the probe to sequentially contact all die, indexing each die on the wafer to be tested in sequence, and sequentially generating corresponding coordinates until all die on the wafer to be tested are traversed.

6. The wafer-level inertial sensor testing method according to claim 1, wherein In step S300, it includes two detection processes: the first detection process is capacitance performance detection and the second detection process is resonant frequency performance detection.

7. The wafer-level inertial sensor testing method according to claim 6, wherein In the first detection process, control the probe to detect the capacitance performance of the die, including the capacitance range and capacitance symmetry; compare the detected capacitance performance data with the standard value, record the capacitance performance data, screen out the die that pass the detection; draw a first wafer map according to the obtained capacitance performance data, and judge the preliminary test result of the die according to the comparison result, and mark the coordinates of the defective die.

8. The wafer-level inertial sensor testing method according to claim 7, wherein In the second detection process, automatically switch the test function of the probe card, and detect the second resonant frequency range of the die with reference to the coordinate system. If a die at a certain coordinate has been confirmed to be damaged in the first detection process, it will be automatically skipped during the second detection process and will no longer be detected; Transmit the final detection data information to the system, and automatically generate the final detection data and results and the corresponding second wafer map.

9. The wafer-level inertial sensor testing method according to claim 1, characterized in that In step S300, when outputting the final detection report, draw and display the test information of each die in the wafer map according to the detection times of each die, the test results in each detection process, and the position coordinates.

10. A wafer-level inertial sensor test system for implementing the wafer-level inertial sensor method according to any one of claims 1-9, includes: A test bench for placing the wafer to be tested, obtaining information of the wafer to be tested, and detecting the die of the wafer to be tested; The needle card unit is used for automatically switching the test function of the probe card; The signal processing unit is used for uploading the information of the wafer to be tested, the coordinates of the detected die, and the detection data of each detection process to the host computer; The host computer is used for determining the matching test configuration according to the information of the wafer to be tested, controlling the test bench to make the probe contact the die of the wafer to be tested to detect the coordinates of the die or test the die, and obtaining the detection result, generating the wafer map of each detection process, and outputting the final detection report according to the detection data of each detection process.

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