Photoresist and preparation method thereof

Abstract

The invention discloses photoresist and a preparation method thereof, and belongs to the technical field of photoresist. The main components of the photoresist provided by the invention are modified epoxy acrylic resin, acrylic resin and a cross-linking monomer, the modified epoxy acrylic resin is obtained by reaction of epoxy resin, acrylic acid and anhydride, and the epoxy resin is modified through acrylic acid and anhydride, so that the cross-linking monomer is obtained; the three components react to form the modified epoxy acrylic resin with electroplating resistance, high resolution and high adhesive force. And the modified epoxy acrylic resin is cooperated with the acrylic resin and the cross-linking monomer, so that the formed photoresist has the characteristics of excellent electroplating resistance, high resolution and excellent adhesive force with a base material, and the printing performance of the photoresist is improved.

Description

Technical Field

[0001] The present application relates to the technical field of photoresists, and in particular to a photoresist and a preparation method thereof. Background Art

[0002] Solar panels are a widely used energy storage method, and their production requires photoresist. Traditional photoresists are applied using dry film plating, but the dry film plating process consumes a significant amount of photoresist, increasing the cost of solar panels. To reduce costs, printable photoresists can be used. However, currently available printable photoresists suffer from poor plating resistance, low resolution, and poor adhesion to substrates, resulting in poor printability. Therefore, there is a need for a photoresist with excellent printability. Summary of the Invention

[0003] The present invention provides a photoresist and a preparation method thereof, wherein the photoresist has good printing performance. The technical solution is as follows:

[0004] In one aspect, a photoresist is provided, comprising the following components in parts by weight:

[0005] 20-40 parts of modified epoxy acrylic resin, 10-30 parts of acrylic resin, 10-20 parts of crosslinking monomer, 2-5 parts of photoinitiator, 5-15 parts of first solvent and 0.1-1.5 parts of auxiliary agent;

[0006] The modified epoxy acrylic resin is obtained by reacting epoxy resin, acrylic acid and acid anhydride.

[0007] In one possible implementation, the preparation method of the modified epoxy acrylic resin includes:

[0008] The epoxy resin is mixed with a portion of the second solvent, and after completely dissolving at 85° C. to 95° C., the acrylic acid is added in multiple portions;

[0009] Continue to add part of the catalyst and part of the polymerization inhibitor, and raise the temperature to less than 105°C;

[0010] The temperature is controlled at 104°C to 106°C for 1 hour, maintained at 108°C to 110°C for 1 hour, maintained at 111°C to 113°C for 1 hour, and kept constant at 114°C to 116°C until the acid value is less than 2 to obtain an intermediate product;

[0011] Add another portion of the second solvent, the acid anhydride, the remaining portion of the catalyst, and the remaining portion of the polymerization inhibitor to the intermediate product, cool the mixture to 98° C., and control the temperature at 95° C. to 97° C. until the acid value decreases by no more than 0.5 / h;

[0012] Add the remaining portion of the second solvent, and cool down to obtain the modified epoxy acrylate resin.

[0013] In another possible implementation, the mass fraction of the epoxy resin in the modified epoxy acrylate resin is 25 to 35 parts;

[0014] The mass fraction of the acrylic acid is 10 to 15 parts;

[0015] The mass fraction of the acid anhydride is 15 to 20 parts;

[0016] The mass fraction of the second solvent is 30 to 40 parts;

[0017] The mass fraction of the catalyst is 0.2 to 0.5 parts;

[0018] The mass fraction of the inhibitor is 0.05 to 0.1 parts.

[0019] In another possible implementation, the epoxy resin is selected from at least one of Chang Chun Chemical (Taiwan) CNE-200, CNE-202, CNE-203, CNE-204, CNE-200ELL, CNE-200ELE, and CNE-200ELF.

[0020] In another possible implementation, the acid anhydride is selected from at least one of maleic anhydride, glutaric anhydride, succinic anhydride, tetrahydrophthalic anhydride, and hexahydrophthalic anhydride.

[0021] In another possible implementation, the inhibitor is selected from at least one of hydroquinone, o-methylhydroquinone, p-methoxyphenol, p-benzoquinone, and 2,6-di-tert-butyl-4-methylphenol.

[0022] In another possible implementation, the acrylic resin is selected from at least one of polyester acrylate, epoxy acrylate, polyether acrylate, pure acrylate, and silicone acrylate resin.

[0023] In another possible implementation, the crosslinking monomer is selected from at least one of dipentaerythritol hexaacrylate, pentaerythritol tetraacrylate, pentaerythritol triacrylate, trimethylolpropane triacrylate, hexanediol diacrylate, butanediol diacrylate, ethylene glycol diacrylate, diphenyl azidophosphate, diethylene glycol diacrylate, polyethylene glycol diacrylate, polypropylene glycol diacrylate, ethoxylated trimethylolpropane triacrylate, ethoxylated pentaerythritol tetraacrylate, propoxylated trimethylolpropane triacrylate, propoxylated pentaerythritol tetraacrylate, and bis-trimethylolpropane tetraacrylate.

[0024] In another possible implementation, the auxiliary agent includes at least one of an antifoaming agent, a leveling agent, and a dispersing agent.

[0025] On the other hand, a method for preparing a photoresist according to any one of the above is provided. The preparation method includes:

[0026] According to the mass parts of each component, the modified epoxy acrylate resin and the acrylate resin are added to the first solvent;

[0027] The crosslinking monomer, the photoinitiator, and the auxiliary agent are continuously added, stirred and mixed, and the temperature of the mixed solution is controlled not to exceed 40 °C until each component is uniformly mixed to obtain the photoresist.

[0028] An embodiment of the present application provides a photoresist. The main components in the photoresist are a modified epoxy acrylate resin, an acrylate resin, and a crosslinking monomer. Among them, the modified epoxy acrylate resin is obtained by the reaction of an epoxy resin, acrylic acid, and an acid anhydride. The epoxy resin is modified by acrylic acid and an acid anhydride, and the three react to form a modified epoxy acrylate resin with anti-electroplating, high resolution, and high adhesion. The modified epoxy acrylate resin synergizes with the acrylate resin and the crosslinking monomer, so that the formed photoresist has excellent anti-electroplating performance, high resolution, and excellent adhesion to the substrate, thereby improving the printing performance of the photoresist.

[0029] It should be understood that the above general description and the following detailed description are only exemplary and do not limit the present disclosure. Detailed Embodiments

[0030] To make the technical solutions and advantages of the present application clearer, the embodiments of the present application will be further described in detail below.

[0031] On the one hand, an embodiment of the present application provides a photoresist, which includes the following components in mass parts:

[0032] 20-40 parts of modified epoxy acrylate resin, 10-30 parts of acrylate resin, 10-20 parts of crosslinking monomer, 2-5 parts of photoinitiator, 5-15 parts of first solvent, and 0.1-1.5 parts of auxiliary agent;

[0033] Among them, the modified epoxy acrylate resin is obtained by the reaction of an epoxy resin, acrylic acid, and an acid anhydride.

[0034] An embodiment of the present application provides a photoresist. The main components in the photoresist are modified epoxy acrylate resin, acrylate resin, and crosslinking monomer. Among them, the modified epoxy acrylate resin is obtained by the reaction of epoxy resin, acrylic acid, and acid anhydride. The epoxy resin is modified by acrylic acid and acid anhydride, and the three react to form a modified epoxy acrylate resin with anti-electroplating, high resolution, and high adhesion. The modified epoxy acrylate resin cooperates with the acrylate resin and the crosslinking monomer to make the formed photoresist have excellent anti-electroplating performance, high resolution, and excellent adhesion to the substrate, thereby improving the printing performance of the photoresist.

[0035] In the embodiment of the present application, the mass fraction of the modified epoxy acrylate resin can be 20 parts, 22 parts, 25 parts, 28 parts, 30 parts, 32 parts, 35 parts, 38 parts, 40 parts; the mass fraction of the acrylate resin can be 10 parts, 12 parts, 15 parts, 18 parts, 20 parts, 22 parts, 25 parts, 28 parts, 30 parts; the mass fraction of the crosslinking monomer can be 10 parts, 11 parts, 12 parts, 13 parts, 14 parts, 15 parts, 16 parts, 17 parts, 18 parts, 19 parts, 20 parts; the mass fraction of the photoinitiator can be 2 parts, 2.5 parts, 3 parts, 3.5 parts, 4 parts, 4.5 parts, 5 parts; the mass fraction of the first solvent can be 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts, 11 parts, 12 parts, 13 parts, 14 parts, 15 parts; the mass fraction of the additive can be 0.1 part, 0.2 part, 0.3 part, 0.4 part, 0.5 part, 0.6 part, 0.8 part, 1 part, 1.1 parts, 1.2 parts, 1.3 parts, 1.4 parts, 1.5 parts.

[0036] In the embodiment of the present application, the modified epoxy acrylate resin is obtained by the reaction of epoxy resin, acrylic acid, and acid anhydride. The preparation process of the modified epoxy acrylate resin is introduced below.

[0037] Step 1: Mix the epoxy resin with part of the second solvent, and after completely dissolving at 85°C to 95°C, add acrylic acid in multiple portions.

[0038] Add the epoxy resin into the reaction vessel, then add part of the second solvent, then heat and control the temperature to completely dissolve the epoxy resin at 85°C to 95°C, and then add acrylic acid in multiple portions.

[0039] Among them, the reaction vessel can be a vessel equipped with a stirring device, a thermometer, and a condenser. The number of times of adding acrylic acid can be set and changed as needed. For example, add acrylic acid in 3 to 4 portions. In addition, when adding acrylic acid in multiple portions, the interval between adjacent two times can be set and changed as needed. For example, the interval is 25 min, 30 min, or 35 min.

[0040] In Step 1, the mass of part of the second solvent can be 55% of the total mass of the second solvent.

[0041] Step 2: Continuously add part of the catalyst and part of the inhibitor, and raise the temperature to less than 105°C.

[0042] In Step 2, part of the catalyst can be added first, and then part of the inhibitor can be added, or part of the inhibitor can be added first, and then part of the catalyst can be added. In the embodiments of the present application, only the case of adding part of the catalyst first and then part of the inhibitor is taken as an example for illustration.

[0043] Among them, the mass of part of the catalyst can be 65% of the total mass of the catalyst, and the mass of part of the inhibitor can be 70% of the total mass of the inhibitor.

[0044] Step 3: Control the temperature to be maintained at 104°C - 106°C for 1 h, at 108°C - 110°C for 1 h, at 111°C - 113°C for 1 h, and keep the temperature constant at 114°C - 116°C until the acid value is less than 2 to obtain an intermediate product.

[0045] Step 4: Add another part of the second solvent, acid anhydride, the remaining part of the catalyst and the remaining part of the inhibitor to the intermediate product, cool down to 98°C, and control the temperature at 95°C - 97°C until the decrease rate of the acid value is not more than 0.5 / h.

[0046] In Step 4, the mass of another part of the second solvent can be 20% of the total mass of the second solvent, the remaining part of the catalyst is 35% of the total mass of the catalyst, and the remaining part of the inhibitor is 30% of the total mass of the inhibitor.

[0047] Among them, the decrease rate of the acid value can be 0.1 / h, 0.2 / h, 0.3 / h, 0.4 / h, 0.5 / h.

[0048] Step 5: Add the remaining part of the second solvent, and obtain a modified epoxy acrylate resin after cooling.

[0049] The mass of the remaining part of the second solvent is 25% of the total mass of the second solvent. After adding the remaining part of the second solvent, cool down to 60°C to obtain a modified epoxy acrylate resin.

[0050] In the embodiments of the present application, the mass fraction of the epoxy resin is 25 - 35 parts, the mass fraction of the acrylic acid is 10 - 15 parts, the mass fraction of the acid anhydride is 15 - 20 parts, the mass fraction of the second solvent is 30 - 40 parts, the mass fraction of the catalyst is 0.2 - 0.5 parts, and the mass fraction of the inhibitor is 0.05 - 0.1 parts.

[0051] Among them, the mass parts of the epoxy resin can be 25 parts, 26 parts, 27 parts, 28 parts, 29 parts, 30 parts, 31 parts, 32 parts, 33 parts, 34 parts, 35 parts, the mass parts of the acrylic acid can be 10 parts, 10.5 parts, 11 parts, 11.5 parts, 12 parts, 12.5 parts, 13 parts, 13.5 parts, 14 parts, 14.5 parts, 15 parts, the mass parts of the acid anhydride can be 15 parts, 15.5 parts, 16 parts, 16.5 parts, 17 parts, 17.5 parts, 18 parts, 18.5 parts, 19 parts, 19.5 parts, 20 parts, the mass parts of the second solvent can be 30 parts, 31 parts, 32 parts, 33 parts, 34 parts, 35 parts, 36 parts, 37 parts, 38 parts, 39 parts, 40 parts, the mass parts of the catalyst can be 0.2 parts, 0.25 parts, 0.3 parts, 0.35 parts, 0.4 parts, 0.45 parts, 0.5 parts, and the mass parts of the inhibitor can be 0.05 parts, 0.06 parts, 0.07 parts, 0.08 parts, 0.09 parts, 0.1 part.

[0052] In a possible implementation, the epoxy resin is selected from at least one of Chang Chun Petrochemical CNE-200, CNE-202, CNE-203, CNE-204, CNE-200ELL, CNE-200ELE, and CNE-200ELF in Taiwan.

[0053] The acid anhydride is selected from at least one of maleic anhydride, glutaric anhydride, succinic anhydride, tetrahydrophthalic anhydride, and hexahydrophthalic anhydride. Specifically, the acid anhydride can be selected from tetrahydrophthalic anhydride or hexahydrophthalic anhydride.

[0054] In the embodiments of the present application, tetrahydrophthalic anhydride and hexahydrophthalic anhydride can make the modified epoxy acrylate resin have a higher film hardness and can more effectively improve the adhesion, elasticity, gloss, and water resistance of the photoresist.

[0055] Among them, tetrahydrophthalic anhydride can be represented as: Hexahydrophthalic anhydride can be represented as

[0056] The inhibitor is selected from at least one of hydroquinone, o-methylhydroquinone, p-methoxyphenol, p-benzoquinone, and 2,6-di-tert-butyl-4-methylphenol.

[0057] The catalyst is selected from at least one of triphenylphosphine, N,N-dimethylformamide, N,N-dimethylaniline, tetraethylammonium bromide, and 4-dimethylaminopyridine.

[0058] The second solvent is selected from at least one of pseudocumene, ether solvents, and ester solvents;

[0059] Among them, the ether solvents can be ether solvents such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol dibutyl ether, diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, tetraethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, tripropylene glycol dimethyl ether, dipropylene glycol methyl ether (DPM), and propylene glycol methyl ether (PM).

[0060] The ester solvents can be ester solvents such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate (PMA), propylene glycol monoethyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, methyl methoxypropionate, ethyl methoxypropionate, methyl ethoxypropionate, ethyl ethoxypropionate, γ-butyrolactone, and dibasic acid ester (DBE).

[0061] In the embodiments of the present application, a specific epoxy resin is used as the starting material, and then acrylic acid and acid anhydride are added, and a modified epoxy acrylate resin with anti-electroplating, high resolution, and high adhesion is formed through reaction.

[0062] In a possible implementation manner, the acrylic resin is selected from at least one of polyester acrylate, epoxy acrylate, polyether acrylate, pure acrylate, and silicone acrylate resin.

[0063] In the embodiments of the present application, adding the above acrylic resin can improve the curing speed of the photoresist, and at the same time can also improve the chemical resistance and yellowing resistance of the photoresist.

[0064] In a possible implementation manner, the crosslinking monomer is a monofunctional crosslinking monomer or a polyfunctional crosslinking monomer. Specifically, the crosslinking monomer is selected from at least one of dipentaerythritol hexaacrylate (DPHA), pentaerythritol tetraacrylate, pentaerythritol triacrylate, trimethylolpropane triacrylate (TMPTA), hexanediol diacrylate, butanediol diacrylate, ethylene glycol diacrylate, diphenyl azidophosphate (DPPA), diethylene glycol diacrylate, polyethylene glycol diacrylate, polypropylene glycol diacrylate, ethoxylated trimethylolpropane triacrylate, ethoxylated pentaerythritol tetraacrylate, propoxylated trimethylolpropane triacrylate, and propoxylated pentaerythritol tetraacrylate.

[0065] In the embodiments of the present application, the above crosslinking monomer generates free radicals under the action of light, and initiates the polymerization reaction of the modified epoxy acrylate resin and the acrylic resin.

[0066] In one possible implementation, the photoinitiator is selected from at least one of photoinitiator 907, photoinitiator 651, photoinitiator 369, photoinitiator ITX, photoinitiator EMK, photoinitiator 184, photoinitiator TPO, photoinitiator 814, photoinitiator BP, photoinitiator 1173 and photoinitiator 784.

[0067] In one possible implementation, the first solvent is selected from at least one of an ether solvent and an ester solvent;

[0068] Among them, the ether solvent can be diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol dibutyl ether, diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, tetraethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, tripropylene glycol dimethyl ether, dipropylene glycol methyl ether (DPM), propylene glycol methyl ether (PM) and other ether solvents.

[0069] The ester solvent can be ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate (PMA), propylene glycol monoethyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, methyl methoxypropionate, ethyl methoxypropionate, methyl ethoxypropionate, ethyl ethoxypropionate, γ-butyrolactone, dibasic acid ester (DBE) and other ester solvents.

[0070] In a possible implementation, the auxiliary agent includes at least one of a defoaming agent, a leveling agent, and a dispersant.

[0071] Among them, the defoaming agent can be selected from Deqian 2700, 3100, 5300, BYK055, BYK088, BYK020, BYK067A; the leveling agent can be selected from BYK333, BYK371, BYK361, Digo Glide100, Glide432, Glide435, Glid440; the dispersant can be selected from BYK Disperbyk-111, Disperbyk-180, Disperbyk-168, Digo Dispers680UV, Dispers681UV, Dispers710.

[0072] In the embodiments of the present application, at least one of the defoaming agent, leveling agent and dispersant works synergistically with other components to remove bubbles in the photoresist and improve the leveling performance of the photoresist surface, so that after the photoresist is printed, the wet film is leveled without bubbles and shrinkage holes.

[0073] It should be noted that the auxiliary agent can include one of an antifoaming agent, a leveling agent and a dispersant, can also include two of an antifoaming agent, a leveling agent and a dispersant, or can include an antifoaming agent, a leveling agent and a dispersant at the same time. In the embodiments of the present application, only the example where the auxiliary agent includes an antifoaming agent, a leveling agent and a dispersant at the same time is taken for illustration.

[0074] If the auxiliary agent includes an antifoaming agent, a leveling agent and a dispersant at the same time, the mass fraction of the antifoaming agent can be 0.05 - 1 part, the mass fraction of the leveling agent can be 0.03 - 0.3 part, and the mass fraction of the dispersant can be 0.02 - 0.2 part.

[0075] Among them, the mass fraction of the antifoaming agent can be 0.05 part, 0.1 part, 0.2 part, 0.3 part, 0.4 part, 0.5 part, 0.6 part, 0.7 part, 0.8 part, 0.9 part, 1 part; the mass fraction of the leveling agent can be 0.03 part, 0.05 part, 0.08 part, 0.1 part, 0.15 part, 0.18 part, 0.2 part, 0.3 part; and the mass fraction of the dispersant can be 0.02 part, 0.03 part, 0.05 part, 0.08 part, 0.1 part, 0.15 part, 0.18 part, 0.2 part.

[0076] On the other hand, the embodiments of the present application provide a preparation method of a photoresist, and the preparation method includes:

[0077] Step 1: Add the modified epoxy acrylate resin and the acrylate resin into the first solvent according to the mass fractions of each component.

[0078] According to the mass fractions of each component, the first solvent can be first added into the reaction vessel, and then the modified epoxy acrylate resin and the acrylate resin are added into the reaction vessel and stirred and mixed evenly.

[0079] Among them, the modified epoxy acrylate resin can be added first and then the acrylate resin, or the acrylate resin can be added first and then the modified epoxy acrylate resin, and no specific limitation is made thereto.

[0080] Step 2: Continuously add the crosslinking monomer, the photoinitiator and the auxiliary agent, stir and mix, and control the temperature of the mixed solution not to exceed 40°C until each component is mixed evenly to obtain the photoresist.

[0081] If the auxiliary agent only includes one of an antifoaming agent, a leveling agent and a dispersant, then the crosslinking monomer, the photoinitiator and the auxiliary agent are continuously added into the reaction vessel, stirred and mixed. Heat will be generated during the stirring process, and the temperature is controlled not to exceed 40°C until each component is mixed evenly to obtain the photoresist.

[0082] If the auxiliary agent includes two of a defoaming agent, a leveling agent, and a dispersing agent, continue to add a crosslinking monomer, a photoinitiator, and one of the auxiliary agents to the reaction vessel, stir and mix. Heat will be generated during the stirring process. Control the temperature not to exceed 40°C. After the added components are mixed evenly, add the other auxiliary agent, continue to stir, and control the temperature not to exceed 40°C until all components are mixed evenly to obtain a photoresist.

[0083] If the auxiliary agent includes a defoaming agent, a leveling agent, and a dispersing agent at the same time, continue to add a crosslinking monomer, a photoinitiator, and a dispersing agent to the reaction vessel, stir and mix. Heat will be generated during the stirring process. Control the temperature not to exceed 40°C. After the added components are mixed evenly, add the defoaming agent and the leveling agent, continue to stir, and control the temperature not to exceed 40°C until all components are mixed evenly to obtain a photoresist.

[0084] Among them, after the components to be added are mixed evenly, the defoaming agent can be added first, continue to stir, and control the temperature not to exceed 40°C. After the defoaming agent is mixed evenly with the components already added, add the leveling agent, continue to stir, and control the temperature not to exceed 40°C until all components are mixed evenly to obtain a photoresist. Or, after the components to be added are mixed evenly, the leveling agent can be added first, continue to stir, and control the temperature not to exceed 40°C. After the leveling agent is mixed evenly with the components already added, add the defoaming agent, continue to stir, and control the temperature not to exceed 40°C until all components are mixed evenly to obtain a photoresist. There is no specific limitation on this.

[0085] The photoresist prepared in this application is a negative photoresist, which has good printing performance. After printing, the wet film has no bubbles and no shrinkage holes during leveling; after curing, the film thickness is uniform, the adhesion to the substrate is excellent, and the anti-electroplating performance is excellent.

[0086] To make the technical solutions and advantages of this application clearer, the following will be elaborated in detail through specific examples.

[0087] In the following specific examples, for operations not specified in conditions, they are all carried out according to conventional conditions or conditions recommended by the manufacturer. All raw materials not specified in the manufacturer and specifications are conventional products that can be obtained through commercial purchase.

[0088] The epoxy resins in Synthesis Examples 1 to 6 were purchased from CNE202, CNE200, and GEN200 of Changchun Chemical Industry Co., Ltd. in Taiwan;

[0089] The epoxy resins in Comparative Synthesis Examples 1 to 2 were purchased from GF-105H-1 and GF-101 of Guangzhou Starry;

[0090] Tetramethylbenzene was purchased from Ningbo Chemical Raw Materials Co., Ltd.;

[0091] Propylene glycol methyl ether acetate was purchased from Hefei Tianjian Chemical Co., Ltd.;

[0092] N,N-dimethylformamide and triphenylphosphine were purchased from Jinan Feiyue Chemical Co., Ltd.;

[0093] o-Methylhydroquinone was purchased from Hubei Honghan Biotechnology Co., Ltd.;

[0094] Tetrahydrophthalic anhydride was purchased from Shanghai Siyan Biotechnology Co., Ltd.;

[0095] Dibasic acid ester was purchased from Hubei Kewode Chemical Co., Ltd.;

[0096] Dipropylene glycol methyl ether and dipropylene glycol dimethyl ether were purchased from Shandong Zhongyuan Chemical Co., Ltd.;

[0097] Propylene glycol methyl ether was purchased from Jiangsu Ruijia Chemical Co., Ltd.;

[0098] 2,6-Di-tert-butyl-4-methylphenol was purchased from Nanjing Datang Chemical Industry Co., Ltd.;

[0099] Tetraethylammonium bromide, p-methoxyphenol, DPM, PMA, PM, and DBE were purchased from Aladdin Mall;

[0100] Diethylene glycol diethyl ether was purchased from Shanghai Demao Chemical Co., Ltd.;

[0101] Ethylene glycol monomethyl ether acetate was purchased from Tianjin Sins Biochem Technology Co., Ltd.;

[0102] 4-Dimethylaminopyridine and p-benzoquinone were purchased from Shanghai Kaisai Chemical Co., Ltd.;

[0103] Acrylic resin was purchased from Guangzhou Starry GF-211FL;

[0104] Photoinitiator 907, photoinitiator ITX, photoinitiator 651, photoinitiator 184, and photoinitiator TPO were purchased from Tianjin Jiuri New Materials Co., Ltd.

[0105] Synthesis Example 1

[0106] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin CNE202 (epoxy equivalent 202 g / eq, softening point 85 °C) and 99 g of durene, heat up and control the temperature at 85 °C to 95 °C to completely dissolve, and add 60 g of acrylic acid (Sinopharm) in several portions.

[0107] Step 2: Add 0.54 g of N,N-dimethylformamide and 0.063 g of hydroquinone in sequence, and heat up to a temperature below 105 °C.

[0108] Step 3: Control the temperature to be maintained at 104°C to 106°C for 1 h, at 108°C to 110°C for 1 h, at 111°C to 113°C for 1 h, and keep it at a constant temperature of 114°C to 116°C until the acid value is less than 2 to obtain an intermediate product.

[0109] Step 4: Add 36 g of durene to the intermediate product, then add 0.018 g of hydroquinone and 0.3 g of N,N-dimethylformamide, and then add 85 g of tetrahydrophthalic anhydride. Cool down to 98°C and control the temperature at 95°C to 97°C until the decrease rate of the acid value ≤ 0.5 / h.

[0110] Step 5: Add 40 g of a diester acid, cool down to 60°C, and obtain a modified epoxy acrylate resin after stopping the reaction.

[0111] In this application, the resin prepared in Synthesis Example 1 is called Resin A1.

[0112] Synthesis Example 2

[0113] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin CNE202 (epoxy equivalent 202 g / eq, softening point 85°C) and 99 g of propylene glycol methyl ether acetate. Heat up and control the temperature at 85°C to 95°C to completely dissolve, and add 30 g of acrylic acid (Sinopharm) in multiple portions.

[0114] Step 2: Add 0.54 g of triphenylphosphine and 0.063 g of o-methylhydroquinone in sequence, and heat up to a temperature less than 105°C.

[0115] Step 3: Control the temperature to be maintained at 104°C to 106°C for 1 h, at 108°C to 110°C for 1 h, at 111°C to 113°C for 1 h, and keep it at a constant temperature of 114°C to 116°C until the acid value is less than 2 to obtain an intermediate product.

[0116] Step 4: Add 36 g of propylene glycol methyl ether acetate to the intermediate product, then add 0.018 g of o-methylhydroquinone and 0.3 g of N,N-dimethylformamide, and then add 42 g of tetrahydrophthalic anhydride. Cool down to 98°C and control the temperature at 95°C to 97°C until the decrease rate of the acid value ≤ 0.5 / h.

[0117] Step 5: Add 40 g of dipropylene glycol methyl ether, cool down to 60°C, and obtain a modified epoxy acrylate resin after stopping the reaction.

[0118] In this application, the resin prepared in Synthesis Example 2 is called Resin A2.

[0119] Synthesis Example 3

[0120] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin CNE200 (epoxy equivalent 180 g / eq, softening point 85 °C) and 99 g of propylene glycol methyl ether. Heat and control the temperature at 85 °C - 95 °C until completely dissolved, and add 60 g of acrylic acid (Sinopharm) in multiple portions.

[0121] Step 2: Add 0.54 g of N,N-dimethylformamide and 0.063 g of hydroquinone in sequence, and heat to a temperature less than 105 °C.

[0122] Step 3: Control the temperature and hold at 104 °C - 106 °C for 1 h, at 108 °C - 110 °C for 1 h, at 111 °C - 113 °C for 1 h, and keep the temperature constant at 114 °C - 116 °C until the acid value is less than 2 to obtain an intermediate product.

[0123] Step 4: Add 36 g of propylene glycol methyl ether acetate to the intermediate product, then add 0.018 g of hydroquinone and 0.3 g of N,N-dimethylformamide. Then add 85 g of tetrahydrophthalic anhydride, cool down to 98 °C, and control the temperature at 95 °C - 97 °C until the acid value decreases by ≤ 0.5 / h.

[0124] Step 5: Add 40 g of dipropylene glycol methyl ether, cool down to 60 °C, and stop the reaction to obtain a modified epoxy acrylate resin.

[0125] In this application, the resin prepared in Synthesis Example 3 is referred to as A3 resin.

[0126] Synthesis Example 4

[0127] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin CNE200 (epoxy equivalent 180 g / eq, softening point 85 °C) and 99 g of dipropylene glycol dimethyl ether. Heat and control the temperature at 85 °C - 95 °C until completely dissolved, and add 60 g of acrylic acid (Sinopharm) in multiple portions.

[0128] Step 2: Add 0.54 g of N,N-dimethylaniline and 0.063 g of 2,6-di-tert-butyl-4-methylphenol in sequence, and heat to a temperature less than 105 °C.

[0129] Step 3: Control the temperature and hold at 104 °C - 106 °C for 1 h, at 108 °C - 110 °C for 1 h, at 111 °C - 113 °C for 1 h, and keep the temperature constant at 114 °C - 116 °C until the acid value is less than 2 to obtain an intermediate product.

[0130] Step 4: Add 36 g of durene to the intermediate product, then add 0.018 g of 2,6-di-tert-butyl-4-methylphenol and 0.3 g of N,N-dimethylaniline, and then add 42 g of tetrahydrophthalic anhydride. Cool down to 98 °C and control the temperature at 95 °C - 97 °C until the acid value decrease rate ≤ 0.5 / h.

[0131] Step 5: Add 40 g of dibasic acid ester, cool down to 60 °C, and obtain the modified epoxy acrylate resin after stopping the reaction.

[0132] In this application, the resin prepared in Synthesis Example 4 is referred to as Resin A4.

[0133] Synthesis Example 5

[0134] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin GEN200 (epoxy equivalent 202 g / eq, softening point 85 °C) and 99 g of durene, heat up and control the temperature at 85 °C - 95 °C to completely dissolve, and add 60 g of acrylic acid (Sinopharm) in multiple portions.

[0135] Step 2: Add 0.54 g of tetraethylammonium bromide and 0.063 g of p-methoxyphenol in sequence, and heat up to a temperature less than 105 °C.

[0136] Step 3: Control the temperature at 104 °C - 106 °C for 1 h, at 108 °C - 110 °C for 1 h, at 111 °C - 113 °C for 1 h, and keep the temperature constant at 114 °C - 116 °C until the acid value is less than 2 to obtain the intermediate product.

[0137] Step 4: Add 36 g of diethylene glycol diethyl ether to the intermediate product, then add 0.018 g of p-methoxyphenol and 0.3 g of tetraethylammonium bromide, and then add 85 g of hexahydrophthalic anhydride. Cool down to 98 °C and control the temperature at 95 °C - 97 °C until the acid value decrease rate ≤ 0.5 / h.

[0138] Step 5: Add 40 g of dipropylene glycol dimethyl ether, cool down to 60 °C, and obtain the modified epoxy acrylate resin after stopping the reaction.

[0139] In this application, the resin prepared in Synthesis Example 5 is referred to as Resin A5.

[0140] Synthesis Example 6

[0141] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin GEN200 (epoxy equivalent 202 g / eq, softening point 85 °C) and 99 g of ethylene glycol monomethyl ether acetate, heat up and control the temperature at 85 °C - 95 °C to completely dissolve, and add 60 g of acrylic acid (Sinopharm) in multiple portions.

[0142] Step 2: Sequentially add 0.54 g of 4-dimethylaminopyridine and 0.063 g of p-benzoquinone, and raise the temperature to less than 105 °C.

[0143] Step 3: Control the temperature to be maintained at 104 °C - 106 °C for 1 h, at 108 °C - 110 °C for 1 h, at 111 °C - 113 °C for 1 h, and keep the temperature constant at 114 °C - 116 °C until the acid value is less than 2 to obtain an intermediate product.

[0144] Step 4: Add 36 g of ethylene glycol monomethyl ether acetate to the intermediate product, then add 0.018 g of p-benzoquinone and 0.3 g of 4-dimethylaminopyridine, and then add 85 g of hexahydrophthalic anhydride. Cool the temperature to 98 °C, and control the temperature at 95 °C - 97 °C until the acid value decline rate ≤ 0.5 / h.

[0145] Step 5: Add 40 g of propylene glycol methyl ether acetate, cool the temperature to 60 °C, and stop the reaction to obtain a modified epoxy acrylate resin.

[0146] This application refers to the resin prepared in Synthesis Example 6 as Resin A6.

[0147] Comparative Synthesis Example 1

[0148] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin GF-105H-1 (epoxy equivalent 350 g / eq) and 99 g of durene, raise the temperature and control it at 85 °C - 95 °C until completely dissolved, and add 60 g of acrylic acid (Sinopharm) in several portions.

[0149] Step 2: Sequentially add 0.54 g of N,N-dimethylformamide and 0.063 g of hydroquinone, and raise the temperature to less than 105 °C.

[0150] Step 3: Control the temperature to be maintained at 104 °C - 106 °C for 1 h, at 108 °C - 110 °C for 1 h, at 111 °C - 113 °C for 1 h, and keep the temperature constant at 114 °C - 116 °C until the acid value is less than 2 to obtain an intermediate product.

[0151] Step 4: Add 36 g of durene to the intermediate product, then add 0.018 g of hydroquinone and 0.3 g of N,N-dimethylformamide, and then add 85 g of tetrahydrophthalic anhydride. Cool the temperature to 98 °C, and control the temperature at 95 °C - 97 °C until the acid value decline rate ≤ 0.5 / h.

[0152] Step 5: Add 40 g of dibasic acid ester, cool the temperature to 60 °C, and stop the reaction to obtain a modified epoxy acrylate resin.

[0153] This application refers to the resin prepared in Comparative Synthesis Example 1 as Resin B1.

[0154] Comparative Synthesis Example 2

[0155] Step 1: In a reaction vessel equipped with a stirring device, a thermometer, and a condenser, add 160 g of epoxy resin GF-101 (epoxy equivalent 310 g / eq) and 99 g of durene, heat up and control the temperature at 85°C - 95°C until completely dissolved, and add 60 g of acrylic acid (Sinopharm) in several portions.

[0156] Step 2: Add 0.54 g of N,N-dimethylformamide and 0.063 g of hydroquinone in sequence, and heat up to a temperature less than 105°C.

[0157] Step 3: Control the temperature and hold at 104°C - 106°C for 1 h, hold at 108°C - 110°C for 1 h, hold at 111°C - 113°C for 1 h, and keep the temperature constant at 114°C - 116°C until the acid value is less than 2 to obtain an intermediate product.

[0158] Step 4: Add 36 g of durene to the intermediate product, then add 0.018 g of hydroquinone and 0.3 g of N,N-dimethylformamide, and then add 85 g of tetrahydrophthalic anhydride, cool down to 98°C, and control the temperature at 95°C - 97°C until the decrease rate of the acid value is ≤ 0.5 / h.

[0159] Step 5: Add 40 g of divalent acid ester, cool down to 60°C, and stop the reaction to obtain the modified epoxy acrylate resin.

[0160] In this application, the resin prepared in Comparative Synthesis Example 2 is referred to as B2 resin.

[0161] Example 1

[0162] This example provides a photoresist, and its preparation method is as follows:

[0163] Add 5 parts by mass of DPM to a reaction vessel, then add 20 parts by mass of A₁ resin and 20 parts by mass of acrylic resin, stir and mix evenly, then continue to add 10 parts by mass of DPHA, 2 parts by mass of photoinitiator 907, 1 part by mass of photoinitiator ITX, 0.5 part by mass of photoinitiator 651, and 0.1 part by mass of Disperbyk-168, stir and mix, control the temperature not exceeding 40°C, continue to add 1 part by mass of BYK020 and 0.2 part by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain the photoresist.

[0164] Example 2

[0165] This example provides a photoresist, and its preparation method is as follows:

[0166] Add 5 parts by mass of PMA to the reaction vessel, then add 30 parts by mass of A2 resin and 10 parts by mass of acrylic resin. After stirring and mixing evenly, continue to add 5 parts by mass of DPHA, 5 parts by mass of DPPA, 2 parts by mass of photoinitiator 907, 0.8 parts by mass of photoinitiator ITX, 0.5 parts by mass of photoinitiator TPO, and 0.1 parts by mass of Disperbyk-168. Stir and mix, control the temperature not exceeding 40°C, continue to add 0.8 parts by mass of BYK020 and 0.4 parts by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0167] Example 3

[0168] This example provides a photoresist, and its preparation method is as follows:

[0169] Add 5 parts by mass of PM to the reaction vessel, then add 25 parts by mass of A3 resin and 25.5 parts by mass of acrylic resin. After stirring and mixing evenly, continue to add 5 parts by mass of DPHA, 5 parts by mass of TMPTA, 2.5 parts by mass of photoinitiator 907, 1.5 parts by mass of photoinitiator ITX, 0.7 parts by mass of photoinitiator 184, and 0.1 parts by mass of Disperbyk-168. Stir and mix, control the temperature not exceeding 40°C, continue to add 1 part by mass of BYK020 and 0.2 parts by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0170] Example 4

[0171] This example provides a photoresist, and its preparation method is as follows:

[0172] Add 5 parts by mass of DBE to the reaction vessel, then add 35 parts by mass of A4 resin and 30 parts by mass of acrylic resin. After stirring and mixing evenly, continue to add 5 parts by mass of DPHA, 5 parts by mass of DI-TMPTA, 2.3 parts by mass of photoinitiator 907, 1 part by mass of photoinitiator ITX, and 0.1 parts by mass of Disperbyk-168. Stir and mix, control the temperature not exceeding 40°C, continue to add 0.8 parts by mass of BYK020 and 0.2 parts by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0173] Example 5

[0174] This example provides a photoresist, and its preparation method is as follows:

[0175] Add 2.5 parts by mass of DPM and 2.5 parts by mass of PMA to the reaction vessel, then add 40 parts by mass of A5 resin and 25 parts by mass of acrylic resin. After stirring and mixing evenly, continue to add 2 parts by mass of DPHA, 4 parts by mass of DPPA, 4 parts by mass of DI-TMPTA, 2 parts by mass of photoinitiator 907, 0.8 parts by mass of photoinitiator ITX, and 0.1 parts by mass of Disperbyk-168, stir and mix. Control the temperature not exceeding 40°C, continue to add 1 part by mass of BYK020 and 0.3 parts by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0176] Example 6

[0177] This example provides a photoresist, and its preparation method is as follows:

[0178] Add 2.5 parts by mass of PMA and 2.5 parts by mass of PM to the reaction vessel, then add 37.5 parts by mass of A6 resin and 21 parts by mass of acrylic resin. After stirring and mixing evenly, continue to add 5 parts by mass of DPHA, 3 parts by mass of TMPTA, 2 parts by mass of DPPA, 2 parts by mass of photoinitiator 907, 0.3 parts by mass of photoinitiator ITX, 0.6 parts by mass of photoinitiator 651, 0.4 parts by mass of photoinitiator TPO, and 0.1 parts by mass of Disperbyk-168, stir and mix. Control the temperature not exceeding 40°C, continue to add 0.8 parts by mass of BYK020 and 0.2 parts by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0179] Comparative Example 1

[0180] This comparative example provides a photoresist, and its preparation method is as follows:

[0181] Add 2.5 parts by mass of PMA and 2.5 parts by mass of PM to the reaction vessel, then add 20 parts by mass of B1 resin and 20 parts by mass of acrylic resin. After stirring and mixing evenly, continue to add 5 parts by mass of DPHA, 5 parts by mass of DI-TMPTA, 2.3 parts by mass of photoinitiator 907, 1 part by mass of photoinitiator ITX, and 0.1 parts by mass of Disperbyk-168, stir and mix. Control the temperature not exceeding 40°C, continue to add 0.5 parts by mass of BYK020 and 0.2 parts by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0182] Comparative Example 2

[0183] This comparative example provides a photoresist, and its preparation method is as follows:

[0184] Add 2.5 parts by mass of PMA to the reaction vessel, then add 40 parts by mass of B2 resin. After stirring and mixing evenly, continue to add 5 parts by mass of DPHA, 5 parts by mass of DPPA, 2 parts by mass of photoinitiator 907, 0.3 parts by mass of photoinitiator ITX, 0.6 parts by mass of photoinitiator 651, 0.4 parts by mass of photoinitiator TPO, and 0.1 part by mass of Disperbyk-168. Stir and mix, control the temperature not exceeding 40°C, continue to add 1 part by mass of BYK020 and 0.3 part by mass of BYK371, continue to stir, and control the temperature not exceeding 40°C until all components are mixed evenly to obtain a photoresist.

[0185] The specific compositions of Examples 1 to 6 and Comparative Examples 1 to 2 can also be seen in Table 1 below. Among them, A(1 - 6) in Table 1 respectively represent A1 - A6 resins, B(1 - 2) respectively represent B1 - B2 resins, C represents acrylic resin. Examples 1 to 6 respectively use A1 - A6 resins, and Comparative Examples 1 to 2 respectively use B1 - B2 resins.

[0186] Table 1

[0187]

[0188]

[0189] After preparing the photoresist, a third solvent can be added to the photoresist. The third solvent includes at least one of dipropylene glycol methyl ether (DPM) and propylene glycol methyl ether (PM), and the viscosity of the mixed solution is adjusted to 500 - 2000 cps. Then use a polyester squeegee to print downward from top to bottom on the substrate through a polyester screen. Among them, the specification of the polyester screen can be 80 - 120 mesh, and the printing pressure can be 400 - 500 N. Then place the substrate carrying the printed photoresist in an oven for baking. The baking temperature can be 90 - 120°C, and the baking time can be 3 - 6 min. Then expose the substrate carrying the printed photoresist after baking through an exposure machine. The energy wavelength of the exposure machine can be 365 nm or 405 nm, and the exposure energy can be 20 - 100 mj. Finally, soak the substrate carrying the printed photoresist after exposure in a sodium carbonate developer solution at a certain temperature to obtain a sample to be tested. Among them, the concentration of the sodium carbonate developer solution can be 0.8% - 1.2%, and the development time can be 30 - 80 s.

[0190] In a possible implementation, the specifications of the polyester screen can be 80 mesh, 90 mesh, 100 mesh, 110 mesh, 120 mesh, the printing pressure can be 400N, 420N, 450N, 480N, 500N, the baking temperature can be 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, the baking time can be 3min, 4min, 5min, 6min, the exposure energy can be 20mj, 30mj, 40mj, 50mj, 60mj, 70mj, 80mj, 90mj, 100mj, the concentration of the sodium carbonate developer can be 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, and the development time can be 30s, 40s, 50s, 60s, 70s, 80s.

[0191] In the embodiments of the present application, only taking the specification of the polyester screen as 80 mesh, the printing pressure as 500N, the baking temperature as 100°C, the baking time as 5min, the energy wavelength of the exposure machine as 365nm, the exposure energy as 50mj, the concentration of the sodium carbonate developer as 1.0%, the soaking temperature as 25°C, and the development time as 40s as an example, the samples to be tested are obtained for illustration. Among them, the samples obtained from the photoresists prepared in Examples 1 to 6 are Samples 1 to 6 respectively, and the samples obtained from the photoresists prepared in Comparative Examples 1 to 2 are Comparative Samples 1 to 2 respectively. The present application has tested Samples 1 to 6 and Comparative Samples 1 to 2, and the specific test results are shown in Table 2 below.

[0192] Table 2

[0193]

[0194] Among them, the resolution is the minimum size of the pattern formed by the exposure of the photoresist.

[0195] Among them, the drying test is after baking in an oven, the baking temperature can be 90 - 120°C, and the baking time can be 3 - 6min. After baking, a dry film is formed. Clean hands to keep them clean and oil-free, and press the surface of the dry film with the finger pulp forcefully. If it adheres to the finger pulp, it is regarded as NG; if the fingerprint is clearly visible after pressing, it is regarded as severe dry finger touch; if the fingerprint is blurred after pressing, it is regarded as slight dry finger touch; if there is no adhesion, no fingerprint, and no change on the surface of the dry film after pressing, it is regarded as dry OK.

[0196] It can be seen from Table 2 that: compared with Comparative Samples 1 and 2, after printing Samples 1 to 6, there are no bubbles or defects on the surface leveling, the drying part is completely dry without finger touch; the resolution can reach 15μm, and the adhesion can reach 5B.

[0197] For Comparative Sample 1, Samples 1 to 6 are made of modified epoxy acrylate resin prepared with a specific epoxy resin, which is different from the epoxy resin used in Comparative Sample 1. Therefore, compared with Comparative Sample 1, the printing performance of Samples 1 to 6 is more prominent. For Comparative Sample 2, it not only uses a different epoxy resin from Samples 1 to 6, but also does not add acrylate resin, while Samples 1 to 6 not only use modified epoxy acrylate resin prepared with a specific epoxy resin, but also compound it with acrylate resin and then cooperate with other components to play a synergistic role, thus making Samples 1 to 6 have more excellent printing performance.

[0198] The above description is only for the convenience of those skilled in the art to understand the technical solution of the present application, and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A photoresist, characterized in that, The photoresist comprises the following components in parts by mass: 20 - 40 parts of modified epoxy acrylate resin, 10 - 30 parts of acrylate resin, 10 - 20 parts of crosslinking monomer, 2 - 5 parts of photoinitiator, 5 - 15 parts of first solvent, and 0.1 - 1.5 parts of auxiliary agent; Among them, the modified epoxy acrylate resin is obtained by the reaction of epoxy resin, acrylic acid, and acid anhydride.

2. The photoresist according to claim 1, wherein The preparation method of the modified epoxy acrylate resin comprises: Mix the epoxy resin with a part of the second solvent, and after completely dissolving at 85°C - 95°C, add the acrylic acid in multiple portions; Continue to add a part of the catalyst and a part of the inhibitor, and raise the temperature to a temperature less than 105°C; Control the temperature to be maintained at 104°C - 106°C for 1 h, at 108°C - 110°C for 1 h, at 111°C - 113°C for 1 h, and keep the temperature constant at 114°C - 1,16°C until the acid value is less than 2 to obtain an intermediate product; Add another part of the second solvent, the acid anhydride, the remaining part of the catalyst, and the remaining part of the inhibitor to the intermediate product, cool down to 98°C, and control the temperature at 95°C - 97°C until the decrease rate of the acid value is not greater than 0.5 / h; Add the remaining part of the second solvent, and obtain the modified epoxy acrylate resin after cooling.

3. The photoresist according to claim 1 or 2, characterized in that, In the modified epoxy acrylate resin, the mass fraction of the epoxy resin is 25 - 35 parts; The mass fraction of the acrylic acid is 10 - 15 parts; The mass fraction of the acid anhydride is 15 - 20 parts; The mass fraction of the second solvent is 30 - 40 parts; The mass fraction of the catalyst is 0.2 - 0.5 parts; The mass fraction of the inhibitor is 0.05 - 0.1 parts.

4. The photoresist according to claim 1 or 2, characterized in that, The epoxy resin is selected from at least one of Changchun Chemical (Taiwan) CNE - 200, CNE - 202, CNE - 203, CNE - 204, CNE - 200ELL, CNE - 200ELE, and CNE - 200ELF.

5. The photoresist according to claim 1 or 2, characterized in that, The acid anhydride is selected from at least one of maleic anhydride, glutaric anhydride, succinic anhydride, tetrahydrophthalic anhydride, and hexahydrophthalic anhydride.

6. The photoresist according to claim 2, characterized in that, The inhibitor is selected from at least one of hydroquinone, o - methylhydroquinone, p - methoxyphenol, p - benzoquinone, and 2,6 - di - tert - butyl - 4 - methylphenol.

7. The photoresist according to claim 1, characterized in that, The acrylate resin is selected from at least one of polyester acrylate, epoxy acrylate, polyether acrylate, pure acrylate, and silicone acrylate resin.

8. The photoresist according to claim 1, wherein The crosslinking monomer is selected from at least one of dipentaerythritol hexaacrylate, pentaerythritol tetraacrylate, pentaerythritol triacrylate, trimethylolpropane triacrylate, hexanediol diacrylate, butanediol diacrylate, ethylene glycol diacrylate, diphenyl azidophosphate, diethylene glycol diacrylate, polyethylene glycol diacrylate, polypropylene glycol diacrylate, ethoxylated trimethylolpropane triacrylate, ethoxylated pentaerythritol tetraacrylate, propoxylated trimethylolpropane triacrylate, propoxylated pentaerythritol tetraacrylate, and bis - trimethylolpropane tetraacrylate.

9. The photoresist according to claim 1, characterized in that, The auxiliary agent includes at least one of defoamer, leveling agent, and dispersant.

10. A method for preparing a photoresist according to any one of claims 1 to 9, characterized in that, The preparation method comprises: Add the modified epoxy acrylate resin and the acrylate resin to the first solvent according to the mass parts of each component; Continue to add the crosslinking monomer, the photoinitiator and the auxiliary agent, stir and mix, and control the temperature of the mixed solution not to exceed 40 °C until each component is uniformly mixed to obtain the photoresist.

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