Novel polarization insensitive space arithmetic unit and implementation method

Abstract

The invention discloses a novel polarization insensitive space arithmetic unit. The structure of the novel polarization insensitive space arithmetic unit comprises a plasma layer and a dielectric layer, the plasma layer is mainly composed of internal inert gas and electrodes used for excitation, a specific excitation source needs to be used for forming the plasma layer, the excitation source is controlled by the programmable logic array, and therefore effective excitation of plasmas is achieved. The dielectric layer comprises two kinds of media with different dielectric constants, namely porous silicon and air. The plasma layer and the dielectric layer form an inclined laminated structure, and plasmas of the first layer and the middle layer are split cross-shaped structures. The space arithmetic unit designed by the invention can perform asymmetric transmission operation on incident electromagnetic waves in different polarization states, the operation precision and stability are not influenced by the polarization state of incident light, and the space arithmetic unit has the characteristics of polarization insensitivity, compact structure, easiness in integration and the like, and is expected to be applied to many fields such as optical information processing, optical communication and the like.

Description

Technical Field

[0001] The present invention relates to the technical field of optical devices, and particularly to a novel polarization-insensitive spatial arithmetic unit and an implementation method thereof, which are used for asymmetric transmission of electromagnetic wave signals incident in opposite directions and calculation operations based on optical signal changes, and have the characteristic of polarization insensitivity, providing an innovative solution for optical computing and related fields. Background Art

[0002] With the rapid development of modern technology, optical computing, as an important technical direction to break through the bottleneck of traditional electronic computing, has attracted increasing attention. Optical computing utilizes the high-speed transmission, low loss, and parallel processing capabilities of light, which can significantly improve the computing efficiency and meet the high-performance requirements in fields such as big data processing and artificial intelligence.

[0003] In the field of optical computing, the application of optical asymmetric devices is of great significance. For example, in military stealth technology, the detection waves of the enemy need to be efficiently absorbed to achieve the stealth effect, while the electromagnetic waves of one's own side need to be smoothly emitted to interfere with the enemy's equipment. This asymmetric absorption-transmission characteristic can significantly improve the concealment and functionality of the system. In addition, in integrated circuit components, the use of optical isolators is crucial. Traditional optical isolators usually adopt a transmission-reflection mode, but the reflected signal may have an adverse impact on circuit integration, resulting in signal interference and a decline in system performance. The asymmetric absorption-transmission characteristic allows the signal to be absorbed during transmission, thereby reducing interference with other components and improving the overall stability of the system.

[0004] However, through retrieval, it is found that most of the existing asymmetric optical devices have polarization sensitivity and are difficult to be applicable to multiple scenarios. For example, the Chinese patent with the publication number CN114361805B (published on July 25, 2023) proposes a terahertz metamaterial tunable directional transmission selector and polarization regulator, which uses a structure with three layers of germanium-silicon dioxide-germanium arranged up and down to achieve the functions of unidirectional transmission and polarization regulation, but this scheme only performs asymmetric transmission on y-polarized electromagnetic waves. In addition, the existing technologies generally have the problems of high loss and only supporting single-polarization state regulation, and are difficult to meet the requirements of multiple scenarios.

[0005] In summary, the existing optical asymmetric devices have significant deficiencies in polarization sensitivity, functional diversity, and adaptability, and there is an urgent need to develop a novel asymmetric device with polarization insensitivity and efficient absorption-transmission characteristics to meet the needs of optical computing and other high-end applications. Summary of the Invention

[0006] To overcome the deficiencies of the above-mentioned existing technologies, the present invention provides a novel polarization-insensitive spatial arithmetic unit and an implementation method. The device structure includes a plasma layer and a dielectric layer, which can perform asymmetric absorption and transmission operations on incident electromagnetic waves with different polarization states, and the operation accuracy and stability are not affected by the polarization state of the incident light, featuring polarization insensitivity, compact structure, and easy integration.

[0007] The present invention is realized through the following technical solutions:

[0008] A novel polarization-insensitive spatial arithmetic unit and an implementation method, including a plasma layer and a dielectric layer. The plasma layer and the dielectric layer form a layered stacked structure with an inclination angle; the plasma layer is obtained by means of dual-end excitation, and electrode arrays for exciting the generation of plasma are respectively provided at its upper and lower ends, and an inert gas is filled between the upper and lower electrode arrays; the dielectric layer is composed of two dielectrics with different dielectric constant magnitudes, namely the first dielectric layer and the second dielectric layer, which are periodically arranged alternately.

[0009] Further, the plasma layer includes a first plasma layer, a second plasma layer, and a third plasma layer. Among them, the first plasma layer and the second plasma layer are in a split "cross" shape structure, and the first plasma layer and the third plasma layer have the same plasma density; the upper and lower electrode arrays constitute a set of excitation electrodes, and this set of excitation electrodes is connected to a plasma excitation source for excitation. The on-off and voltage magnitude of the plasma excitation source are controlled by a programmable control logic array to realize the regulation of the plasma density of the plasma layer.

[0010] Further, the first dielectric layer is a porous silicon layer with a dielectric constant ε PSi = 1.3 and a thickness d PSi = 0.82 mm; the second dielectric layer is an air layer with a dielectric constant ε air = 1.0 and a thickness d air = 0.4 mm.

[0011] Further, the plasma layers are all non-magnetized plasmas. The plasma densities of the first plasma layer and the third plasma layer are respectively n e1 and n e3 , n e1 = n e3 = 10 18 m -3 , and the plasma density n e2 of the second plasma layer = 10 19 m -3 . The first plasma layer and the second plasma layer are in a split "cross" shape structure with the same size, and the sizes of each part are as follows: l1 = 8 mm, l2 = 10 mm, m1 = 4 mm, m2 = 5 mm.

[0012] Further, the tilt angle φ of the layered stacked structure is 45°, the incident angle θ of the electromagnetic wave is 10°, the height h is 20 mm, the width a in the y direction is 26.1 mm, and b is 26.1 mm; the dielectric arrangement order of the layered stacked structure is the first plasma layer, (porous silicon layer air layer) 3 , porous silicon layer, second plasma layer, (porous silicon layer air layer) 3 , third plasma layer.

[0013] A method for realizing a novel polarization-insensitive spatial arithmetic unit, wherein the novel polarization-insensitive spatial arithmetic unit is a layered stacked structure with a tilt angle composed of plasma layers and dielectric layers; the plasma layer is obtained by means of dual-end excitation, and electrode arrays for exciting plasma are respectively arranged at the upper and lower ends thereof, and an inert gas is filled between the upper and lower electrode arrays; the dielectric layer is alternately composed of two dielectrics with different dielectric constant magnitudes, namely a first dielectric layer and a second dielectric layer, and the realization method is as follows: when electromagnetic waves are incident in different polarization modes, an asymmetric absorption and transmission phenomenon is exhibited, and asymmetric transmission when the electromagnetic waves are incident in opposite directions can be realized, and good polarization-insensitive characteristics are possessed. Specifically, it is absorbed when incident forward in the transverse electric (TE) mode and the transverse magnetic (TM) mode, and transmitted when incident backward, and the absorption rate and the transmission rate are both higher than 0.8 in the range of 17.46 - 17.53 GHz, and asymmetric transmission when the electromagnetic waves are incident in opposite directions can be realized, and good polarization-insensitive characteristics are possessed, and it is expected to be applied to many fields such as optical information processing and optical communication.

[0014] Compared with the prior art, the present invention has the following technical effects:

[0015] (1) The present invention proposes a novel polarization-insensitive spatial arithmetic unit, and through the design of the tilt stacking structure of the plasma layer and the dielectric layer, the asymmetric absorption and transmission characteristics of the transverse electric (TE) mode and the transverse magnetic (TM) mode are realized. Specifically, the electromagnetic wave is efficiently absorbed when incident forward, and transmitted when incident backward, and the absorption rate and the transmission rate are both higher than 0.8 in the frequency band of 17.46 - 17.53 GHz. This polarization-insensitive asymmetric characteristic significantly improves the adaptability of the device in a complex electromagnetic environment and provides an efficient solution for fields such as optical information processing and optical communication.

[0016] (2) Through the optimized design of the multi-layer structure and the adoption of plasma density regulation technology, the present invention achieves precise manipulation of electromagnetic waves. The plasma layer adopts a split "cross" structure, and the voltage and on / off of the plasma excitation source are regulated through a programmable control logic array, enabling dynamic adjustment of the plasma density, thereby achieving flexible control of the absorption and transmission characteristics of electromagnetic waves. This design breaks through the limitation of traditional optical devices being sensitive to polarization, significantly enhancing the versatility and applicability of the devices.

[0017] (3) The layered stacked structure of the present invention consists of a non-magnetized plasma layer, a porous silicon layer, and an air dielectric layer. The arrangement at an angle of 45° further optimizes the propagation path of electromagnetic waves, reducing the influence of reflection and stray light. By precisely controlling the dielectric constant, thickness, and arrangement order of each layer, efficient electromagnetic wave regulation is achieved, while reducing the physical size and complexity of the device, and having the advantages of a compact structure and easy integration.

[0018] (4) The present invention exhibits excellent broadband performance in the frequency band of 17.46 - 17.53 GHz and can adapt to the asymmetric transmission requirements of a variety of electromagnetic wave frequency bands. The polarization-insensitive characteristic and high absorption and transmittance of this device make it have broad application prospects in the fields of optical stealth, optical isolators, optical communications, etc. Especially in military stealth and integrated circuit components, it can effectively reduce signal interference and improve the system performance and stability. Description of the Drawings

[0019] Figure 1 Schematic diagram of the overall system structure of a novel polarization-insensitive spatial arithmetic unit according to an embodiment of the present invention;

[0020] Figure 2 Schematic diagram of the layered stacked structure unit of a novel polarization-insensitive spatial arithmetic unit according to an embodiment of the present invention;

[0021] Figure 3 Side view of the layered stacked structure unit of a novel polarization-insensitive spatial arithmetic unit according to an embodiment of the present invention;

[0022] Figure 4 Dimension diagram of the first plasma layer and the second plasma layer in the spatial arithmetic unit according to an embodiment of the present invention;

[0023] Figure 5 Schematic diagram of the forward absorption rate and backward transmittance of the spatial arithmetic device in the TM mode according to an embodiment of the present invention;

[0024] Figure 6 Schematic diagram of the forward absorption rate and backward transmittance of the spatial arithmetic device in the TE mode according to an embodiment of the present invention.

[0025] In the figure: 1 - Plasma excitation source; 2 - Spatial arithmetic unit in a layered stacked structure; 2.1 - First plasma layer; 2.2 - Second plasma layer; 2.3 - Third plasma layer; 2.4 - Porous silicon layer; 2.5 - Air layer. Specific embodiments

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0027] In the description of the present invention, it should be noted that, unless otherwise clearly defined and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, and can be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0028] In the present invention, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over" and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "under" and "beneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than that of the second feature.

[0029] Those skilled in the art of the present technology can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as the general understanding of those of ordinary skill in the art to which the present invention belongs. It should also be understood that terms defined in a general dictionary such as those should be understood to have a meaning consistent with the meaning in the context of the prior art, and will not be interpreted with an idealized or overly formal meaning unless defined as here.

[0030] The present invention proposes a novel polarization-insensitive spatial arithmetic unit, which includes a plasma excitation source 1; a layered stacked structure unit 2 of the spatial arithmetic unit; a first plasma layer 2.1; a second plasma layer 2.2; a third plasma layer 2.3; a porous silicon layer 2.4; and an air layer 2.5. In the present invention, a layered stacked structure composed of a plasma layer and a dielectric layer is adopted, which can achieve the asymmetric absorption and transmission characteristics of the transverse electric (TE) mode and the transverse magnetic (TM) mode, that is, the electromagnetic wave is efficiently absorbed when incident forward, and the electromagnetic wave is transmitted when incident backward. The absorption rate and the transmission rate are both higher than 0.8 in the frequency band of 17.46 - 17.53 GHz.

[0031] The overall system structure schematic diagram of the novel polarization-insensitive spatial arithmetic unit is as Figure 1 shown, and it is composed of a plasma excitation source 1 and a layered stacked structure 2. When the whole system works, the voltage and on / off of the plasma excitation source 1 can be regulated by a programmable control logic array to dynamically adjust the plasma density, so as to realize the flexible control of the absorption and transmission characteristics of the electromagnetic wave.

[0032] The layered stacked structure 1, as Figure 2 shown, the overall dielectric arrangement order is (the first plasma layer 2.1)(the porous silicon layer 2.4 air layer 2.5) 3 (the porous silicon layer 2.4)(the second plasma layer 2.2)(the porous silicon layer 2.4 air layer 2.5) 3 (the third plasma layer 2.3). The tilt angle φ of the stacked structure composed of the plasma layer and the dielectric layer is 45°, the incident angle θ of the electromagnetic wave is 10°, the height h is 20 mm, the width a in the y direction is 26.1 mm, and b is 26.1 mm. Among them, the first dielectric layer is a porous silicon layer, and the dielectric constant ε PSi = 1.3, and the thickness d PSi = 0.82 mm; the second dielectric layer is an air layer, and the dielectric constant ε air = 1.0, and the thickness d air = 0.4 mm.

[0033] Figure 3 is the side view of the layered stacked structure unit of the novel polarization-insensitive spatial arithmetic unit, and the width a in the y direction is 26.1 mm, and b is 26.1 mm.

[0034] Figure 4 is the size diagram of the first plasma layer and the second plasma layer, which is a split "cross" structure, and the sizes of each part are as follows: l1 = 8 mm, l² = 10 mm, m1 = 4 mm, m² = 5 mm.

[0035] Figure 5Schematic diagram of the forward absorptivity and backward transmittance of the spatial operation device according to an embodiment of the present invention in the TM mode. In the range of 17.46 - 17.57 GHz, both the absorptivity of forward incidence and the transmittance of backward incidence are higher than 0.8, showing a good asymmetric absorption and transmission phenomenon.

[0036] Figure 6 Schematic diagram of the forward absorptivity and backward transmittance of the spatial operation device according to an embodiment of the present invention in the TE mode. In the range of 17.46 - 17.53 GHz, both the absorptivity of forward incidence and the transmittance of backward incidence are higher than 0.8. According to Figure 5 and Figure 6 the results, it can be seen that in the range of 17.46 - 17.53 GHz, the spatial operation device shows an asymmetric absorption and transmission phenomenon for both TM wave and TE wave incidence, and has good polarization-insensitive characteristics.

[0037] After specific design (introducing a plasma layer, tilting the layered stack structure by 45°), the present invention can achieve asymmetric transmission that is not affected by the polarization state. The polarization-insensitive characteristics and high absorption and transmittance of this device make it have broad application prospects in the fields of optical stealth, optical isolators, optical communication, etc. Especially in military stealth and integrated circuit components, it can effectively reduce signal interference and improve the system performance and stability.

[0038] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention.

Claims

1. A novel polarization-insensitive spatial arithmetic unit, characterized in that, It includes a plasma layer and a dielectric layer, and the plasma layer and the dielectric layer form a layered stacked structure with an inclination angle; the plasma layer is obtained by means of dual-end excitation, and electrode arrays for exciting the generation of plasma are respectively provided at its upper and lower ends, and an inert gas is filled between the upper and lower electrode arrays; the dielectric layer is periodically and alternately composed of two dielectrics with different dielectric constant magnitudes, namely the first dielectric layer and the second dielectric layer.

2. A novel polarization-insensitive spatial arithmetic unit according to claim 1, characterized in that, The plasma layer includes a first plasma layer, a second plasma layer and a third plasma layer, wherein the first plasma layer and the second plasma layer are split "cross" structures, and the first plasma layer and the third plasma layer have the same plasma density; the upper and lower electrode arrays constitute a set of excitation electrodes, and this set of excitation electrodes is connected to a plasma excitation source for excitation, and the on-off and voltage magnitude of the plasma excitation source are controlled by a programmable control logic array to realize the regulation of the plasma density of the plasma layer.

3. The novel polarization-insensitive spatial arithmetic unit according to claim 2, characterized in that, The first dielectric layer is a porous silicon layer with a dielectric constant ε PSi = 1.3 and a thickness d PSi = 0.82 mm; the second dielectric layer is an air layer with a dielectric constant ε air = 1.0 and a thickness d air = 0.4 mm.

4. A novel polarization-insensitive spatial arithmetic unit according to claim 3, characterized in that, The plasma layers are all non-magnetized plasmas. The plasma densities of the first plasma layer and the third plasma are n e1 and n e3 respectively, where n e1 = n e3 = 10 18 m -3 . The plasma density n e2 of the second plasma layer is 10 19 m -3 . The first plasma layer and the second plasma layer have the same size, and the sizes of each part are as follows: l1 = 8 mm, l2 = 10 mm, m1 = 4 mm, m2 = 5 mm.

5. A novel polarization-insensitive spatial arithmetic unit according to claim 4, characterized in that, The tilt angle φ of the layered stack structure is 45°, the incident angle θ of the electromagnetic wave is 10°, the height h is 20 mm, the width a in the y direction is 26.1 mm, and b is 26.1 mm; the medium arrangement order of the layered stack structure is the first plasma layer, (porous silicon layer air layer) 3 , porous silicon layer, second plasma layer, (porous silicon layer air layer) 3 , third plasma layer.

6. A method for implementing a novel polarization-insensitive spatial arithmetic unit, characterized in that, The novel polarization-insensitive spatial arithmetic unit is a layered stacked structure with an inclination angle composed of a plasma layer and a dielectric layer; the plasma layer is obtained by means of dual-end excitation, and electrode arrays for exciting the generation of plasma are respectively provided at its upper and lower ends, and an inert gas is filled between the upper and lower electrode arrays; the dielectric layer is alternately composed of two dielectrics with different dielectric constant magnitudes, namely the first dielectric layer and the second dielectric layer; the implementation method is as follows: when electromagnetic waves are incident in different polarization modes, an asymmetric absorption and transmission phenomenon is exhibited, and the asymmetric transmission when the electromagnetic waves are incident in opposite directions can be realized, and it has good polarization-insensitive characteristics.

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