HDPCVD (High Density Plasma Chemical Vapor Deposition) machine nozzle position arrangement method, system and equipment and readable storage medium

Abstract

The invention provides an HDPCVD (High Density Plasma Chemical Vapor Deposition) machine nozzle position arrangement method, system and equipment and a readable storage medium. The method comprises the steps of initializing the number of ants and a two-dimensional pheromone matrix of an ant colony algorithm according to the number of nozzles and film thickness contribution values of the nozzles and corresponding position points on a wafer; according to the number of ants, the two-dimensional pheromone matrix and a probability selection formula, a solution space is constructed, and a solution in the solution space is a nozzle arrangement position; updating pheromones in the two-dimensional pheromone matrix according to the first relational expression under the condition that an iteration stop condition of the ant colony algorithm is not met, and returning to construct the solution space; under the condition that the iteration stopping condition of the ant colony algorithm is met, the optimal solution in the solution space is obtained, and the optimal solution is the arrangement position of the nozzles, so that the film thickness uniformity of the wafer can be optimal. The time for replacing the position of the nozzle in actual operation can be shortened, the efficiency for replacing the position of the nozzle is improved, and the nozzle replacement cost is reduced.

Description

Background Art

[0002] High Density Plasma Chemical Vapor Deposition (HDP-CVD) technology is widely used in the deposition of insulating layers in processes below 0.18 microns. The films prepared by HDP-CVD machines have high requirements for thickness uniformity. Among them, the key to affecting thickness uniformity lies in the nozzles in the inner cavity of the chemical vapor deposition equipment. There are multiple nozzles in a chamber in total. Due to the precision difference in the size of the holes of each nozzle, after each nozzle replacement, it is necessary to try to change the nozzle position multiple times to achieve better film thickness uniformity.

[0003] To solve the problem of poor film thickness uniformity caused by the above nozzle reasons, the position of some nozzles is usually changed on site, and then the thickness uniformity is adjusted to the optimal position. The current main method for replacing nozzles is to first deposit a film on a test piece, and then judge which nozzles need to be replaced or which nozzles need to be replaced with new nozzles according to the measurement results on the test piece. Each time a nozzle is replaced, the HDP-CVD machine needs to run a large number of programs to stabilize the chamber environment, and also needs a large number of test pieces to measure the film thickness. Therefore, the current nozzle replacement takes a long time and the replacement efficiency is low, affecting the production capacity of the HDP-CVD machine. Summary of the Invention

[0004] Aiming at the problems in the prior art, the purpose of the present invention is to provide a method, system, device and readable storage medium for arranging the positions of nozzles of an HDP-CVD machine, so as to improve the replacement efficiency of the nozzles of the HDP-CVD machine.

[0005] An embodiment of the present invention provides a method for replacing nozzles of an HDP-CVD machine, including:

[0006] According to the number of the nozzles and the film thickness contribution values of the corresponding position points on the wafer of the nozzles, initialize the number of ants and the two-dimensional pheromone matrix of the ant colony algorithm; the pheromone τ in the two-dimensional pheromone matrix ij is the pheromone between position i and position j, and the pheromone τ ij is used to characterize the probability of exchanging the positions of the nozzle at position i and the nozzle at position j, where i and j are positive integers;

[0007] Construct a solution space according to the number of ants, the two-dimensional pheromone matrix and a preset heuristic function, and the solutions in the solution space are the nozzle arrangement positions on the HDP-CVD machine;

[0008] When the iteration stop condition of the ant colony algorithm is not satisfied, update the pheromone in the two-dimensional pheromone matrix according to the first relational expression, and return to construct the solution space according to the number of ants, the number of ants, and the updated two-dimensional pheromone matrix;

[0009] When the iteration stop condition of the ant colony algorithm is satisfied, obtain the optimal solution in the solution space, and the optimal solution is the arrangement position of the nozzles that can make the film thickness uniformity of the wafer the best.

[0010] In some embodiments, the pheromone

[0011] where Ti is the film thickness at the corresponding position of the nozzle and the wafer, μ is the average value of the film thickness at all points, and N is the number of corresponding position points of the nozzle and the wafer.

[0012] In some embodiments, the first relational expression is:

[0013]

[0014] where τ ij (t + 1) is the pheromone concentration between position i and position j when the iteration number is t times, ρ is the pheromone evaporation factor, m is the number of ants, and k is the current ant.

[0015] In some embodiments, the probability selection formula

[0016] where η ij represents the heuristic information of the exchange of the nozzle at position i and the nozzle at position j, α is the pheromone control factor, β is the heuristic information control factor, and allowed is the position point that the ant has not visited yet.

[0017] In some embodiments, before constructing the solution space of the nozzles, it further includes:

[0018] Detect whether τ ij > τ max holds;

[0019] When τ ij > τ max holds, construct the solution space.

[0020] In some embodiments, when the film thickness uniformity obtained by the arrangement of each nozzle in the solution space meets the preset uniformity requirement, the iteration stop condition is satisfied.

[0021] In some embodiments, when the film thickness uniformity obtained by the arrangement of each nozzle in the solution space is less than 2%, the iteration stop condition is satisfied.

[0022] The embodiments of the present invention provide a replacement system for the nozzles of an HDPCVD machine tool, which is used to implement the method for replacing the nozzles of the HDPCVD machine tool as described above. The system includes:

[0023] An initialization module, configured to initialize the number of ants and the two-dimensional pheromone matrix of the ant colony algorithm according to the number of the nozzles and the film thickness contribution value of the influence points of the nozzle pairs; the pheromone τ in the two-dimensional pheromone matrix ij is the pheromone between position i and position j, and the pheromone τ ij is used to characterize the probability of exchanging the positions of the nozzle at position i and the nozzle at position j, where i and j are positive integers;

[0024] A construction module, configured to construct a solution space according to the number of ants, the two-dimensional pheromone matrix, and a preset heuristic function, and the solution in the solution space is the arrangement position of the nozzles on the HDPCVD machine tool;

[0025] A first judgment module, configured to update the pheromone in the two-dimensional pheromone matrix according to a first relational expression and return to construct the solution space according to the number of ants, the number of ants, and the updated two-dimensional pheromone matrix when the iteration stop condition of the ant colony algorithm is not satisfied;

[0026] A second judgment module, configured to obtain the optimal solution in the solution space when the iteration stop condition of the ant colony algorithm is satisfied, and the optimal solution is the arrangement position of the nozzles that can make the film thickness uniformity of the wafer the best.

[0027] The embodiments of the present invention also provide an electronic device, including:

[0028] A processor;

[0029] A memory, in which executable instructions of the processor are stored;

[0030] Wherein, the processor is configured to execute the steps of the method for replacing the nozzles of the HDPCVD machine tool as described above by executing the executable instructions.

[0031] An embodiment of the present invention provides a computer-readable storage medium for storing a program, characterized in that the program, when executed by a processor, implements the steps of the method for replacing the nozzles of the HDPCVD machine tool as described above.

[0032] The method, system, device, and readable storage medium for arranging the positions of the nozzles of the HDPCVD machine tool provided by the present invention have the following advantages:

[0033] The optimal positions of the nozzle arrangements are obtained by using the ant colony algorithm, and then the positions of the nozzles are adjusted according to the optimal positions of the nozzle arrangements obtained above, so as to improve the efficiency of replacing the nozzle positions, reduce the time consumed for replacing the nozzle positions, improve the efficiency of the film thickness reaching the uniformity requirement after replacing the nozzles, and improve the production capacity of the HDPCVD machine. Description of the Drawings

[0034] Other features, objects, and advantages of the present invention will become more apparent by reading the detailed description of the non-limiting embodiments with reference to the following drawings.

[0035] Figure 1 is a side view of an HDPCVD machine;

[0036] Figure 2 is a top view of an HDPCVD machine;

[0037] Figure 3 is a schematic diagram of a wafer;

[0038] Figure 4 is a flowchart of a nozzle replacement method according to an embodiment of the present invention;

[0039] Figure 5 is a wafer film thickness map before calculation using the method provided by the present invention;

[0040] Figure 6 is a wafer film thickness map after calculation using the method provided by the present invention;

[0041] Figure 7 is a schematic structural diagram of a nozzle position arrangement system of an HDPCVD machine according to an embodiment of the present invention;

[0042] Figure 8 is a schematic structural diagram of a nozzle position arrangement device of an HDPCVD machine according to an embodiment of the present invention;

[0043] Figure 9 is a schematic structural diagram of a computer-readable storage medium according to an embodiment of the present invention. Detailed Embodiments

[0044] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. Identical reference numerals in the figures denote identical or similar structures, and thus their repetitive description will be omitted.

[0045] Figure 1 shows a side view of the reaction chamber of an HDPCVD machine. AsFigure 1 As shown, a top nozzle 10 is provided at the center of the top wall of the reaction chamber, and a plurality of edge nozzles 20 are provided on the side wall. Reaction gas is input into the reaction chamber through the top nozzle 10 and the edge nozzles 20, and then a film layer structure is formed on the surface of the wafer. Figure 2 The top view of the reaction chamber of the HDPCVD machine is shown. As Figure 2 described, a plurality of edge nozzles 20 are evenly spaced in the reaction chamber, and there are a total of 36 nozzles, namely nozzle S1 to nozzle S24 and nozzle SO1 to nozzle SO12.

[0046] When the thickness uniformity of the film layer structure on the wafer surface is poor, it is necessary to cool down the reaction chamber and open the chamber to replace the top nozzle 10 or the edge nozzles 20, so as to improve the uniformity of the generated thin film. However, since the number of edge nozzles 20 is large, the film uniformity cannot reach the standard requirements after being replaced once. Therefore, when usually replacing the edge nozzles 20 to debug the film uniformity prepared by the machine, a large amount of debugging time will be spent, resulting in a reduction in the production efficiency of the HDPCVD machine and a large consumption of materials.

[0047] To solve the problems in the prior art, an embodiment of the present invention provides a method for arranging the positions of nozzles of an HDPCVD machine. Figure 4 The flow chart of the method for arranging the positions of nozzles of the HDPCVD machine is shown. As Figure 4 shown, the method for replacing nozzles of the HDPCVD machine includes the steps:

[0048] Step S100: Initialize the number of ants and the two-dimensional pheromone matrix of the ant colony algorithm according to the number of the nozzles and the film thickness contribution values of the corresponding position points on the wafer for the nozzles; the pheromone τ ij in the two-dimensional pheromone matrix is the pheromone between position i and position j, and the pheromone τ ij is used to characterize the probability of exchanging the positions of the nozzle at position i and the nozzle at position j, where i and j are positive integers;

[0049] Step S200: Construct a solution space according to the number of ants, the two-dimensional pheromone matrix, and the probability selection formula, and the solution in the solution space is the nozzle arrangement position on the HDPCVD machine;

[0050] Step S310: When the iteration stop condition of the ant colony algorithm is not satisfied, update the pheromone in the two-dimensional pheromone matrix according to the first relational expression, and return to construct the solution space according to the number of ants, the number of ants, and the updated two-dimensional pheromone matrix;

[0051] Step S320: When the iteration stop condition of the ant colony algorithm is satisfied, obtain the optimal solution in the solution space, where the optimal solution is the arrangement position of the nozzles that can make the film thickness uniformity of the wafer the best.

[0052] In this technical solution, the optimal positions of the arrangements of the nozzles are obtained by using the ant colony algorithm, and then the positions of the nozzles are adjusted according to the optimal positions of the arrangements of the nozzles obtained above, which can improve the efficiency of changing the nozzle positions, reduce the time consumed for changing the nozzle positions, improve the efficiency of the film thickness reaching the uniformity requirement after changing the nozzles, and improve the production capacity of the HDPCVD machine.

[0053] In the method for arranging the nozzle positions of the HDPCVD machine in this embodiment, the serial number of each step is only used to distinguish each step, rather than being a limitation on the specific execution order of each step. The execution order among the above steps can be adjusted and changed as needed.

[0054] Specifically, the corresponding position points on the wafer for the nozzles refer to the points on the wafer directly below the nozzles S1 to S24 and the nozzles SO1 to SO12. Figure 3 A schematic diagram of a wafer is shown. Combining Figure 2 and Figure 3 as shown, the position 1 on the wafer directly below the nozzle S1, the position point 2 on the wafer directly below the nozzle SO8, the position point 3 on the wafer directly below the nozzle S, and so on, to obtain the positions of each nozzle corresponding to the wafer.

[0055] Each edge nozzle not only affects the film thickness deposited at the point directly below it, but also affects the film thickness at its adjacent points. For example, the film thickness deposited by the nozzle S1 at the point directly below it (position point 1 on the wafer) is T S1 , and the contribution to the film thickness at the corresponding point (position 2 on the wafer) below the adjacent nozzle SO8 is T S1O8 , and the contribution to the film thickness at the corresponding point (position 36 on the wafer) below the adjacent nozzle S15 is T S1S15 . The distances of the remaining nozzles from the nozzle S1 are relatively far, and the influence on the film thickness at the point directly below the nozzle S1 is small, so they are not considered.

[0056] Therefore, the film thickness at the point directly below each edge nozzle can be expressed as:

[0057] T1 = T S1 ’ = T S1 + T S15S1 + T SO8S1 ;

[0058] T2 = T SO8 ’ = T SO8 + T S1SO8 + TS24SO8 ;

[0059] T3 = T S24 ’ = T S24 + T SO8S24 + T S11S24 ;

[0060] T4 = T S11 ’ = T S11 + T S24S11 + T SO6S11 ;

[0061] T5 = T SO6 ’ = T SO6 + T S11SO6 + T S14SO6 ;

[0062] T6 = T S14 ’ = T S14 + T SO6S14 + T S7S14 ;

[0063] T7 = T S7 ’ = T S7 + T S14S7 + T SO9S7 ;

[0064] T8 = T SO9 ’ = T SO9 + T S7SO9 + T S18SO9 ;

[0065] T9 = T S18 ’ = T S18 + T SO9S18 + T S3S18 ;

[0066] T10 = T S3 ’ = T S3 + T S18S3 + T SO2S3 ;

[0067] T11 = T SO2 ’ = T SO2 + T S3SO2 + T S22SO2 ;

[0068] T12 = T S22 ’ = T S22 + T SO2S22 + T S6S22 ;

[0069] T13 = T S6 ’ = T S6 + T S22S6 + TSO11S6 ;

[0070] T14 = T SO11 ’ = T SO11 +T S6SO11 +T S19SO11 ;

[0071] T15 = T S19 ’ = T S19 +T SO11S19 +T S9S19 ;

[0072] T16 = T S9 ’ = T S9 +T S19S9 +T SO4S9 ;

[0073] T17 = T SO4 ’ = T SO4 +T S9SO4 +T S16SO4 ;

[0074] T18 = T S16 ’ = T S16 +T SO4S16 +T S2S16 ;

[0075] T19 = T S2 ’ = T S2 +T S16S2 +T SO7S2 ;

[0076] T20 = T SO7 ’ = T SO7 +T S2SO7 +T S23SO7 ;

[0077] T21 = T S23 ’ = T S23 +T SO7S23 +T S12S23 ;

[0078] T22 = T S12 ’ = T S12 +T S23S12 +T SO5S12 ;

[0079] T23 = T SO5 ’ = T SO5 +T<\ S12SO5 +T S13SO5 ;

[0080] T24 = T S13 ’ = T<\ S13 +T SO5S13 +TS8S13 ;

[0081] T25 = T S8 ’ = T S8 + T S13S8 + T SO10S8 ;

[0082] T26 = T SO10 ’ = T SO10 + T S8SO10 + T S17SO10 ;

[0083] T27 = T S17 ’ = T S17 + T SO10S17 + T S4S17 ;

[0084] T28 = T S4 ’ = T S4 + T S17S4 + T SO1S4 ;

[0085] T29 = T SO1 ’ = T SO1 + T S4SO1 + T S21SO1 ;

[0086] T30 = T S21 ’ = T S21 + T SO1S21 + T S5S21 ;

[0087] T31 = T S5 ’ = T S5 + T S21S5 + T SO12S5 ;

[0088] T32 = T SO12 ’ = T SO12 + T S5SO12 + T S20SO12 ;

[0089] T33 = T S20 ’ = T S20 + T SO12S20 + T S10S20 ;

[0090] T34 = T S10 ’ = T S10 + T S20S10 + T SO3S10 ;

[0091] T35 = T SO3 ’ = T SO3 + T S10SO3 + TS15SO3 ;

[0092] T36 = T S15 ’ = T S15 + T SO3S15 + T S1S15 ;

[0093] Since the spacing between each edge nozzle is constant, the film thickness influence of each edge nozzle on its adjacent edge nozzle satisfies a certain proportional relationship. For example:

[0094] T S1S08 ’ = k1T S1 ;

[0095] Wherein, k1 is proportional to the spacing between nozzle S1 and nozzle SO8, and the spacing between nozzle S1 and edge nozzle SO8 is fixed, so k1 is a constant value. At this time,

[0096] T1 = T S1 ’ = T S1 + k2T S15 + k1T SO8 ;

[0097] Similarly,

[0098] T2 = T SO8 ’ = T SO8 + k1T S1 + k1T S24 ;

[0099] T3 = T S24 ’ = T S24 + k1T SO8 + k2T S11 ;

[0100] T4 = T S11 ’ = T S11 + k2T S24 + k1T SO6 ;

[0101] T5 = T SO6 ’ = T SO6 + k1T S11 + k1T S14 ;

[0102] T6 = T S14 ’ = T S14 + k1T SO6 + k2T S7 ;

[0103] T7 = T S7 ’ = T S7 + k2T S14 + k1TSO9 ;

[0104] T8 = T SO9 ’ = T SO9 + k1T S7 + k1T S18 ;

[0105] T9 = T S18 ’ = T S18 + k1T SO9 + k2T S3 ;

[0106] T10 = T S3 ’ = T S3 + k2T S18 + k1T SO2 ;

[0107] T11 = T SO2 ’ = T SO2 + k1T S3 + k1T S22 ;

[0108] T12 = T S22 ’ = T S22 + k1T SO2 + k2T S6 ;

[0109] T13 = T S6 ’ = T S6 + k2T S22 + k1T SO11 ;

[0110] T14 = T SO11 ’ = T SO11 + k1T S6 + k1T S19 ;

[0111] T15 = T S19 [[ID=...]] It seems the text you provided is incomplete. If you can supply the full content, I'll be able to provide a more complete translation. For now, this is what I've translated based on what's here. ’ = T S19 + k1T SO11 + k2T S9 ;

[0112] T16 = T S9 ’ = T S9 + k2T S19 + k1T SO4 ;

[0113] T17 = T SO4 ’ = T SO4 + k1T S9 + k1T S16 ;

[0114] T18 = TS16 ’ = T S16 + k1T SO4 + k2T S2 ;

[0115] T19 = T S2 ’ = T S2 + k2T S16 + k1T SO7 ;

[0116] T20 = T SO7 ’ = T SO7 + k1T S2 + k1T S23 ;

[0117] T21 = T S23 ’ = T S23 + k1T SO7 + k2T S12 ;

[0118] T22 = T S12 ’ = T S12 + k2T S23 + k1T SO5 ;

[0119] T23 = T SO5 ’ = T SO5 + k1T S12 + k1T S13 ;

[0120] T24 = T S13 ’ = T S13 + k1T SO5 + k2T S8 ;

[0121] T25 = T S8 ’ = T S8 + k2T S13 + k1T SO10 ;

[0122] T26 = T SO10 ’ = T SO10 + k1T S8 + k1T S17 ;

[0123] T27 = T S17 ’ = T S17 + k1T SO10 + k2T S4 ;

[0124] T28 = T S4 ’ = T S4 + k2T S17 + k1TSO1 ;

[0125] T29 = T SO1 ’ = T SO1 + k1T S4 + k1T S21 ;

[0126] T30 = T S21 ’ = T S21 + k1T SO1 + k2T S5 ;

[0127] T31 = T S5 ’ = T S5 + k2T S21 + k1T SO12 ;

[0128] T32 = T SO12 ’ = T SO12 + k1T S5 + k1T S20 ;

[0129] T33 = T S20 ’ = T S20 + k1T SO12 + k2T S10 ;

[0130] T34 = T S10 ’ = T S10 + k2T S20 + k1T SO3 ;

[0131] T35 = T SO3 ’ = T SO3 + k1T S10 + k1T S15 ;

[0132] T36 = T S15 ’ = T S15 + k1T SO3 + k2T S1 ;

[0133] Wherein, k1 and k2 are fixed values with different spacings, and T S1 ’ to T S24 ’, T SO1 ’ to T SO12 ’ can be detected by the film thickness measuring device. Therefore, according to the above formula, the actual influence of each edge nozzle on the film thickness at the point directly below it (positions 1 to 36), that is, the contribution value of each edge nozzle to the film thickness at the point directly below it, can be obtained.

[0134] When the exchange nozzles SO8 and nozzle SO6 are used, the nozzle SO8 at the corresponding position 2 and the nozzle SO6 at position 5 on the wafer are exchanged. Correspondingly, the film thicknesses at position points 2 and 5 will change, and further, the film thicknesses at the remaining position points will also be affected. For example:

[0135] T1 = T S1 ’ = T S1 +k2T S15 +k1T SO6 ;

[0136] T2 = T SO6 ’ = T SO6 +k1T S1 +k1T S24 ;

[0137] T3 = T S24 ’ = T S24 +k1T SO6 +k2T S11 ;

[0138] T4 = T S11 ’ = T S11 +k2T S24 +k1T SO8 ;

[0139] T5 = T SO8 ’ = T SO8 +k1T S11 +k1T S14 ;

[0140] T6 = T S14 ’ = T S14 +k1T SO8 +k2T S7 ; ...

[0142] And so on, the film thicknesses at the remaining position points after the nozzle exchange can be obtained, and then the average value, film thickness difference, etc. of the film thickness on the wafer after the nozzle exchange can be calculated according to the formula.

[0143] Furthermore, in step S100, it is set that the number of ants is m, and the number of nozzles is n (for example, the number of nozzles is 36 here). A reasonable number of ants can explore more paths and increase the global search ability of the algorithm.

[0144] The pheromone concentration on the path where the nozzle at position i and the nozzle at position j are exchanged at the initial moment is τ ij (t), then the initial pheromone matrix is:

[0145]

[0146] It should be noted that the pheromone matrix A is a diagonal matrix, τ ij =τ ji .

[0147] Specifically, in this embodiment, pheromone

[0148] Among them, Ti is the film thickness at the corresponding position between the nozzle and the wafer, μ is the average film thickness of all points, and N is the number of corresponding positions between the nozzle and the wafer. ij The larger it is, the more likely the nozzles will be arranged in the same way next time.

[0149] It should be noted that, at the initial moment, the pheromones in the pheromone matrix are the same.

[0150] Furthermore, the probability selection formula is:

[0151] where η ij Represents the heuristic information exchanged between the nozzle at position i and the nozzle at position j; α is the pheromone control factor, β is the heuristic information control factor, and allowed is the location point that the ant has not visited yet.

[0152] In this embodiment, Ti-Tj is the difference in film thickness between positions i and j. However, the heuristic information formula is not limited to this. The larger the Pij, the more likely the nozzles at positions i and j are to be swapped.

[0153] The pheromone factor α controls the degree of influence of pheromones on path selection. The larger its value, the stronger the ants' dependence on pheromones and the more inclined they are to paths with higher pheromone concentrations. The smaller its value, the smaller the search range of the ant colony and the more likely it is to fall into local optimality. Therefore, the pheromone factor α needs to be set reasonably.

[0154] The heuristic function factor β controls the degree of influence of heuristic information on path selection. The larger its value, the stronger the ant's dependence on heuristic information, but it is easy to fall into local optimality; the smaller its value, the role of heuristic information may be ignored. Therefore, the heuristic function factor β needs to be set reasonably.

[0155] Furthermore, in this embodiment, before step S200 constructing the nozzle solution space, the following steps are also included:

[0156] Detection τ ij >τ max whether it is established;

[0157] When τ ij >τ max When established, construct the solution space.

[0158] By constructing τ ij> τ max Whether it holds or not is used to set the stop condition for one iteration of the ant, thereby constructing the solution space and reducing the computational amount during one iteration.

[0159] However, the condition for the end of one iteration is not limited to this, and the end condition of one iteration can be set according to actual needs.

[0160] When the number of ants is greater than 1 and there are multiple solution spaces during one iteration, the optimal solution space is set as the best solution space, and the best solution space is also the position arrangement of the nozzles that can obtain the best film thickness uniformity.

[0161] Furthermore, in step S310, the first relational expression is:

[0162]

[0163] where τ ij (t + 1) is the pheromone concentration between the nozzle at position i and the nozzle at position j when the iteration number is t, ρ is the pheromone evaporation factor, m is the number of ants, and k is the current ant.

[0164] τ ij (t) is the pheromone concentration of the path from position point i to position point j at time t, and τ ij (t + 1) is the concentration in the next round;

[0165] When a wave of ants forage at time t + 1, they will receive the pheromone concentration left by the previous wave of ants at time t influence.

[0166] Furthermore, when using the ant colony algorithm to solve the best position arrangement of the nozzles, certain iteration stop conditions can be set. For example, in some embodiments, when the film thickness uniformity obtained by the arrangement of each nozzle in the solution space meets the preset uniformity requirement, the iteration stop condition is satisfied. Exemplarily, for example, when the film thickness uniformity obtained by the arrangement of each nozzle in the solution space is less than 2%, the iteration stop condition is satisfied. Or, in another embodiment, when the number of iterations is greater than Q times, the iteration stop condition is satisfied.

[0167] By setting the iteration stop condition, the exploration of nozzle position swapping can be completed within a limited time, improving the exploration efficiency of nozzle replacement and avoiding excessive waste of resources.

[0168] When performing multiple iterations to solve the best solution space, find the minimum value of the average film thickness after the path passed by each ant in each round of iteration. Compared with the optimal solution of the previous round, the smallest one is recorded as the current optimal solution.

[0169] Furthermore, use the method for arranging the nozzle positions of the HDPCVD machine tool provided by the embodiments of the present invention to arrange the nozzles of an HDPCVD machine tool.Figure 5 And Figure 6 respectively show the wafer film thickness MAP diagram before calculation using the method of the present invention and the wafer film thickness MAP diagram obtained by calculation using the method of the present invention. As Figure 5 shown, before using the method provided by the present invention, the average value of the film thickness on the wafer is , the maximum range of the film thickness difference is , and the standard deviation is 3.47%. As Figure 6

[0170] shown, after 50 iterations of the algorithm, the average value of the film thickness on the wafer is , the maximum film thickness difference

[0171] range is , and the standard deviation is 1.62%, meeting the standard of the film thickness range of the HDPCVD machine. Therefore, arranging the nozzle positions using the nozzle position arrangement method provided by the embodiments of the present invention can optimize the uniformity of the prepared thin film.

[0172] The embodiments of the present invention also provide an HDPCVD machine nozzle position arrangement system for implementing the above-mentioned HDPCVD machine nozzle position arrangement method.

[0173] Figure 7 Exemplarily shows a schematic structural diagram of the HDPCVD machine nozzle position arrangement system. As Figure 7 shown, the system includes:

[0174] An initialization module M100, configured to initialize the number of ants and the two-dimensional pheromone matrix of the ant colony algorithm according to the number of nozzles and the film thickness contribution value of the influence points of the nozzle pairs; the pheromone τ ij in the two-dimensional pheromone matrix is the pheromone between position i and position j, and the pheromone τ ij is used to characterize the probability of exchanging the positions of the nozzles at position i and position j, and i, j are positive integers;

[0175] A construction module M200, configured to construct a solution space according to the number of ants, the two-dimensional pheromone matrix, and the probability selection formula, and the solution in the solution space is the nozzle arrangement position on the HDPCVD machine;

[0176] A first judgment module M300, configured to update the pheromone in the two-dimensional pheromone matrix according to the first relational expression and return to construct a solution space according to the number of ants, the number of ants, and the updated two-dimensional pheromone matrix when the iteration stop condition of the ant colony algorithm is not satisfied;

[0177] A second judgment module M400, configured to obtain the optimal solution in the solution space when the iteration stop condition of the ant colony algorithm is satisfied, and the optimal solution is the nozzle arrangement position that can make the film thickness uniformity of the wafer the best.

[0178] The nozzle position arrangement system provided by the present invention uses the ant colony algorithm to obtain the optimal positions of the nozzles, and then adjusts the positions of the nozzles according to the optimal positions of the nozzles obtained above, improving the efficiency of replacing the nozzle positions, reducing the time consumed for replacing the nozzle positions, improving the efficiency of the film thickness reaching the uniformity requirement after replacing the nozzles, and improving the production capacity of the HDPCVD machine.

[0179] An embodiment of the present invention further provides an HDPCVD machine nozzle position arrangement device, including a processor; a memory storing executable instructions of the processor; wherein the processor is configured to execute the steps of the HDPCVD machine nozzle position arrangement method by executing the executable instructions.

[0180] Those skilled in the art can understand that various aspects of the present invention can be implemented as a system, a method, or a program product. Therefore, various aspects of the present invention can be specifically implemented in the following forms, namely: a complete hardware implementation, a complete software implementation (including firmware, microcode, etc.), or an implementation combining hardware and software aspects, which can be collectively referred to as "circuitry", "module", or "platform" here.

[0181] The following refers to Figure 8 to describe the electronic device 600 according to this embodiment of the present invention. Figure 8 The displayed electronic device 600 is only an example and should not impose any limitations on the functions and usage scope of the embodiments of the present invention.

[0182] As Figure 8 shown, the electronic device 600 is presented in the form of a general computing device. The components of the electronic device 600 may include, but are not limited to: at least one processing unit 610, at least one storage unit 620, a bus 630 connecting different system components (including the storage unit 620 and the processing unit 610), a display unit 640, etc.

[0183] Among them, the storage unit stores program codes, and the program codes can be executed by the processing unit 610, so that the processing unit 610 executes the steps according to various exemplary embodiments of the present invention described in the above HDPCVD machine nozzle position arrangement method part of this specification. For example, the processing unit 610 can execute the steps as Figure 1 shown.

[0184] The storage unit 620 may include a readable medium in the form of a volatile storage unit, such as a random access storage unit (RAM) 6201 and / or a cache storage unit 6202, and may further include a read-only storage unit (ROM) 6203.

[0185] The storage unit 620 may further include a program / utility 6204 having a set (at least one) of program modules 6205. Such program modules 6205 include, but are not limited to, an operating system, one or more application programs, other program modules, and program data. Each or some combination of these examples may include an implementation of a network environment.

[0186] The bus 630 may represent one or more of several types of bus structures, including a memory bus or memory controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus structures.

[0187] The electronic device 600 may also communicate with one or more external devices 700 (such as a keyboard, a pointing device, a Bluetooth device, etc.), may also communicate with one or more devices that enable a user to interact with the electronic device 600, and / or may communicate with any device that enables the electronic device 600 to communicate with one or more other computing devices (such as a router, a modem, etc.). Such communication may be through the input / output (I / O) interface 650. Further, the electronic device 600 may also communicate with one or more networks (such as a local area network (LAN), a wide area network (WAN), and / or a public network, such as the Internet) through the network adapter 660. The network adapter 660 may communicate with other modules of the electronic device 600 through the bus 630. It should be understood that, although not shown in the figure, other hardware and / or software modules may be used in conjunction with the electronic device 600, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems, etc.

[0188] In the HDPCVD machine nozzle position arrangement device, when the program in the memory is executed by the processor, the steps of the HDPCVD machine nozzle position arrangement method are implemented. Therefore, the device can also obtain the technical effects of the above HDPCVD machine nozzle position arrangement method.

[0189] An embodiment of the present invention also provides a computer-readable storage medium for storing a program, and when the program is executed by the processor, the steps of the HDPCVD machine nozzle position arrangement method are implemented. In some possible implementation manners, various aspects of the present invention may also be implemented in the form of a program product, which includes program code. When the program product is executed on a terminal device, the program code is used to cause the terminal device to execute the steps according to various exemplary embodiments of the present invention described in the above HDPCVD machine nozzle position arrangement method section of this specification.

[0190] Reference Figure 9As shown, a program product 800 for implementing the above method according to an embodiment of the present invention is described. It can be a portable compact disc read-only memory (CD-ROM) and includes program code, and can be executed on a terminal device, such as a personal computer. However, the program product of the present invention is not limited thereto. In this document, a readable storage medium can be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, apparatus, or device.

[0191] The program product can adopt any combination of one or more readable media. The readable media can be a readable signal medium or a readable storage medium. The readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the above. More specific examples (a non-exhaustive list) of the readable storage medium include: an electrical connection having one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0192] The computer-readable storage medium can include a data signal propagated in a baseband or as part of a carrier wave, in which the readable program code is carried. Such a propagated data signal can take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. The readable storage medium can also be any readable medium other than the readable storage medium, which can send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the readable storage medium can be transmitted by any appropriate medium, including but not limited to wireless, wired, optical fiber, RF, etc., or any suitable combination of the above.

[0193] The program code for performing the operations of the present invention can be written in any combination of one or more programming languages. The programming languages include object-oriented programming languages - such as Java, C++, etc., and also include conventional procedural programming languages - such as the "C" language or similar programming languages. The program code can be executed entirely on the user's computing device, partially on the user's device, executed as an independent software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server. In the case of a remote computing device, the remote computing device can be connected to the user's computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computing device (for example, by using an Internet service provider to connect through the Internet).

[0194] When the program in the computer storage medium is executed by a processor, the steps of the nozzle position arrangement method for the HDPCVD machine are implemented. Therefore, the computer storage medium can also achieve the technical effects of the above nozzle position arrangement method for the HDPCVD machine.

[0195] The above content is a further detailed description of the present invention in combination with specific preferred embodiments. It cannot be determined that the specific implementation of the present invention is only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention belongs, without departing from the concept of the present invention, several simple deductions or substitutions can be made, and all should be regarded as belonging to the protection scope of the present invention.

Claims

1. A method for arranging nozzle positions of an HDPCVD machine, characterized in that Including: Initializing the number of ants and the two-dimensional pheromone matrix of the ant colony algorithm according to the number of the nozzles and the film thickness contribution values of the corresponding position points on the wafer; The pheromone τ in the two-dimensional pheromone matrix ij is the pheromone between position i and position j. The pheromone τ ij is used to characterize the probability of position exchange between the nozzle at position i and the nozzle at position j, where i and j are positive integers; Constructing a solution space according to the number of ants, the two-dimensional pheromone matrix, and the probability selection formula, where the solutions in the solution space are the nozzle arrangement positions on the HDPCVD machine platform; When the iteration stop condition of the ant colony algorithm is not satisfied, updating the pheromone in the two-dimensional pheromone matrix according to the first relational expression, and returning to construct the solution space according to the number of ants, the number of ants, and the updated two-dimensional pheromone matrix; When the iteration stop condition of the ant colony algorithm is satisfied, obtaining the optimal solution in the solution space, where the optimal solution is the nozzle arrangement position that can make the film thickness uniformity of the wafer the best.

2. The method for arranging the nozzle positions of the HDPCVD machine according to claim 1, wherein The pheromone Wherein, Ti is the film thickness of the corresponding position point of the nozzle and the wafer, μ is the average value of the film thicknesses of all points, and N is the number of corresponding position points of the nozzle and the wafer.

3. The method for arranging nozzle positions of an HDPCVD machine according to claim 1, characterized in that Probability selection formula where η ij represents the heuristic information for the nozzle at position i and the nozzle at position j to be exchanged, α is the pheromone control factor, β is the heuristic information control factor, and allowed is the set of position points that the ants have not visited yet.

4. The method for arranging nozzle positions of an HDPCVD machine tool according to claim 2, characterized in that, The first relational expression is: where τ ij (t + 1) is the pheromone concentration between position i and position j when the iteration number is t, ρ is the pheromone evaporation factor, m is the number of ants, and k is the current ant.

5. The method for arranging the nozzle positions of the HDPCVD machine according to claim 1, wherein Before constructing the solution space of the nozzles, it further includes: Detect τ ij > τ max Is it true; When τ ij > τ max is established, the solution space is constructed.

6. The method for arranging nozzle positions of an HDPCVD machine tool according to claim 1, wherein When the film thickness uniformity obtained by the arrangement of each nozzle in the solution space meets the preset uniformity requirement, the iteration stop condition is satisfied.

7. The method for arranging the nozzle positions of the HDPCVD machine according to claim 6, wherein When the film thickness uniformity obtained by the arrangement of each nozzle in the solution space is less than 2%, the iteration stop condition is satisfied.

8. A nozzle position arrangement system for an HDPCVD machine, characterized in that, For implementing the HDPCVD machine platform nozzle position arrangement method according to any one of claims 1 to 7, the system includes: Initialization module, configured to initialize the number of ants and the two-dimensional pheromone matrix of the ant colony algorithm according to the number of the nozzles and the film thickness contribution values of the influence points of the nozzle pairs; the pheromone τ in the two-dimensional pheromone matrix ij is the pheromone between position i and position j, and the pheromone τ ij is used to characterize the probability of position exchange between the nozzle at position i and the nozzle at position j, where i and j are positive integers; A construction module, configured to construct a solution space according to the number of ants, the two-dimensional pheromone matrix, and the probability selection formula, where the solutions in the solution space are the nozzle arrangement positions on the HDPCVD machine platform; A first judgment module, configured to, when the iteration stop condition of the ant colony algorithm is not satisfied, update the pheromone in the two-dimensional pheromone matrix according to the first relational expression, and return to construct the solution space according to the number of ants, the number of ants, and the updated two-dimensional pheromone matrix; A second judgment module, configured to, when the iteration stop condition of the ant colony algorithm is satisfied, obtain the optimal solution in the solution space, where the optimal solution is the nozzle arrangement position that can make the film thickness uniformity of the wafer the best.

9. An electronic device, characterized in that, Including: A processor; A memory, in which executable instructions of the processor are stored; Wherein, the processor is configured to execute the steps of the HDPCVD machine platform nozzle position arrangement method according to any one of claims 1 to 7 by executing the executable instructions.

10. A computer-readable storage medium for storing a program, characterized in that, When the program is executed by the processor, it implements the steps of the HDPCVD machine platform nozzle replacement method according to any one of claims 1 to 7.

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