Plasma etching device and method

Abstract

The invention provides a plasma etching device and method.The plasma etching device comprises a frame, a workbench is installed on the frame, an etching box is arranged below the workbench, a cylinder is installed above the workbench, a working cavity is formed in the etching box, a plasma cavity is formed in the cylinder, and a spiral coil is arranged on the outer side of the cylinder in a sleeving mode; an etching gas supply mechanism and a first power supply mechanism are arranged on the frame, a base station is arranged in the working cavity, and a second power supply mechanism is arranged on the base station. High-frequency electric power is supplied to the spiral coil through the first electric power supply mechanism, and an induced magnetic field is generated in the plasma cavity; etching gas is supplied into the plasma cavity through the supply pipe, the etching gas is ionized through the induced magnetic field, meanwhile, the multiple sets of conical metal blocks which are annularly arranged and make contact with one another are located in the spiral coil, the intensity of the induced magnetic field generated by the spiral coil in the plasma cavity is enhanced, and then the plasma intensity of the etching gas is enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma etching, and in particular to a plasma etching device and method. Background Art

[0002] Plasma etching is a form of dry etching. Its principle is to form a plasma from a gas in an electron region, generating a gas composed of ionized gas and released high-energy electrons, thereby forming plasma or ions. When the ionized gas atoms are accelerated by an electric field, they will release sufficient force to tightly bond with the surface expulsion force of the material or etch the surface.

[0003] Chinese Patent Application No. 2013800439811 discloses a plasma etching device, which can improve the uniformity of the density in the generated plasma plane and etch the entire surface of the substrate uniformly. The etching device includes a chamber that defines a plasma generation space and a processing space; a coil disposed outside the upper chamber portion; a stage disposed in the processing space for placing a substrate; an etching gas supply mechanism for supplying an etching gas to the plasma generation space; a coil power supply mechanism for supplying high-frequency power to the coil; and a stage power supply mechanism for supplying high-frequency power to the stage.

[0004] The above-mentioned plasma etching device supplies high-frequency power to the coil through a high-frequency power supply, generating an induced magnetic field in the plasma generation space. By supplying the etching gas from the etching gas supply source into the plasma generation space, the etching gas is plasmaized by the induced magnetic field. However, the intensity of the induced magnetic field generated only by the coil is relatively limited. Therefore, we propose a plasma etching device and method. Summary of the Invention

[0005] The object of the present invention is to provide a plasma etching device for the deficiencies of the prior art. High-frequency power is supplied to a spiral coil through a first power supply mechanism to generate an induced magnetic field in the plasma chamber. The etching gas is supplied to the plasma chamber through a supply pipe, and the induced magnetic field plasmaizes the etching gas. At the same time, multiple sets of annularly arranged and mutually contacting conical metal blocks are located inside the spiral coil to enhance the intensity of the induced magnetic field generated by the spiral coil in the plasma chamber, thereby enhancing the intensity of etching gas plasmaization.

[0006] To achieve the above object, the present invention provides the following technical solutions: A plasma etching device includes a frame, on which a workbench is installed. An etching chamber is provided below the workbench, and a cylinder is installed above the workbench. A working chamber is provided in the etching chamber, and a plasma chamber is provided in the cylinder. A spiral coil is sleeved outside the cylinder. A etching gas supply mechanism and a first power supply mechanism are provided on the frame. A base is provided in the working chamber, and a second power supply mechanism is provided on the base. A air extraction mechanism is provided on the frame; the air extraction mechanism includes an air extraction pump; a magnetic enhancement mechanism is provided in the working chamber, and the magnetic enhancement mechanism enhances the induced magnetic field generated by the spiral coil.

[0007] The magnetic enhancement mechanism includes: conical metal blocks, a plurality of the conical metal blocks are arranged in a ring and are in contact with each other; connecting rods, the connecting rods are installed on the conical metal blocks; a flipping assembly, the flipping assembly drives the conical metal blocks to flip; a rotating assembly, the rotating assembly drives the conical metal blocks to rotate.

[0008] The flipping assembly includes: a fixed platform, the fixed platform is installed in the working chamber, and a plurality of grooves, a plurality of square grooves and a sliding groove are opened on the fixed platform; a rotating sleeve, the rotating sleeve is rotatably arranged in the groove, the connecting rod is rotatably arranged in the rotating sleeve, and an installation groove is opened at the top of the rotating sleeve; a straightening block, the straightening block is slidably arranged in the square groove; a connecting rod, the connecting rod is rotatably arranged between the straightening block and the installation groove; a sliding rod, the sliding rod is installed on the straightening block, and the sliding rod slides in the sliding groove.

[0009] A rotating disk is rotatably arranged on the fixed platform, and a plurality of sliding grooves are opened on the rotating disk, and the sliding rod slides in the sliding grooves; The rotating assembly includes: a first gear, the first gear is installed on the connecting rod; a rotating ring, the rotating ring is rotatably arranged on the fixed platform; a ring gear, the ring gear is installed at the bottom of the rotating ring, and a receiving cavity is opened in the rotating sleeve; an elastic connecting piece, the elastic connecting piece is sleeved outside the connecting rod, one end of the elastic connecting piece is connected to the connecting rod, and the other end of the elastic connecting piece is connected to the receiving cavity.

[0010] The etching gas supply mechanism includes: a connecting frame, the connecting frame is installed in the frame; a first rotation driving member, the first rotation driving member is installed on the connecting frame; a moving rod, the moving rod is installed at the output end of the first rotation driving member, and the moving rod is connected to the rotating disk; a connecting plate, the connecting plate is installed on the rotating ring; a sleeve rod, the sleeve rod is installed on the connecting plate, and the sleeve rod is sleeved outside the moving rod; a rotating table, the rotating table is rotatably arranged on the top of the cylinder; a supply pipe, the supply pipe is arranged on the rotating table.

[0011] A second rotary drive member and a third rotary drive member are mounted on the connecting frame. A second gear is mounted at the output end of the second rotary drive member, and a third gear is mounted at the output end of the third rotary drive member. A fourth gear is mounted on the sleeve rod. The second gear meshes with the fourth gear. A sleeve is mounted on the rotating table. The sleeve is sleeved outside the sleeve rod. A fifth gear is mounted on the sleeve. The third gear meshes with the fifth gear.

[0012] The present invention further includes a cooling mechanism, which cools the spiral coil. The cooling mechanism includes: a box body mounted on the frame; a mounting sleeve sleeved outside the two end portions of the spiral coil; a pipeline disposed between the box body and the mounting sleeve; a cooling cavity is formed in the spiral coil, an insulating cooling liquid is provided in the box body, and a circulation pump is provided on the pipeline.

[0013] The first power supply mechanism includes: a first power supply installed in the frame, and the first power supply is connected to the spiral coil; a wire is provided on the connecting rod; the second power supply mechanism includes a second power supply, and the second power supply supplies power to the base and the wire.

[0014] The beneficial effects of the present invention are as follows: (1) In the present invention, high-frequency power is supplied to the spiral coil through the first power supply mechanism to generate an induced magnetic field in the plasma chamber; the etching gas is supplied to the plasma chamber through the supply pipe, and the induced magnetic field ionizes the etching gas. At the same time, a plurality of groups of annularly arranged and mutually contacting conical metal blocks are located in the spiral coil, enhancing the intensity of the induced magnetic field generated by the spiral coil in the plasma chamber, and further enhancing the ionization intensity of the etching gas.

[0015] (2) In the present invention, the third rotary drive member drives the third gear to rotate. Since the third gear meshes with the fifth gear, the sleeve and the rotating table are driven to rotate, adjusting the position of the supply pipe on the plasma chamber. When the supply pipe supplies the etching gas to the plasma chamber, the etching gas is uniformly arranged in the plasma chamber.

[0016] (3) In the present invention, the first rotary drive member drives the moving rod to rotate to drive the rotating disk to rotate. The sliding rod slides in the sliding groove, driving the straightening block to slide inward along the square groove, pulling the rotating sleeve to rotate through the connecting rod, and pulling the conical metal block to turn to the horizontal state. This reciprocates to stir the etching gas in the plasma chamber and enhance the ionization intensity of the etching gas.

[0017] (4) In the present invention, the first rotation driving member drives the moving rod to drive the rotating disk to rotate. The sliding rod slides in the sliding groove, driving the straightening block to slide inward along the square groove. The connecting rod is used to pull the rotating sleeve to rotate, pulling the conical metal block to flip to the horizontal state. At this time, the first gear meshes with the ring gear. The second rotation driving member drives the second gear to rotate, driving the fourth gear, the sleeve rod, and the ring gear to rotate. Since the first gear meshes with the ring gear, the connecting rod and the conical metal block are driven to rotate, causing one side of the conical metal block to face downward. The second power supply mechanism stops applying a bias potential to the substrate on the base. The second power supply mechanism applies a bias potential to the conical metal block through a wire, causing the ions in the plasma chamber to move upward. Then, the second power supply mechanism applies a bias potential to the substrate on the base, and the second power supply mechanism stops applying a bias potential to the conical metal block. The ions in the plasma chamber irradiate the substrate again, performing ion-assisted etching on the substrate. This process is repeated to enhance the ion etching effect on the substrate. Description of the Drawings

[0018] Figure 1 It is a schematic diagram of the first overall structure of the present invention; Figure 2 It is a schematic diagram of the second overall structure of the present invention; Figure 3 It is a schematic diagram of the third overall structure of the present invention; Figure 4 It is a schematic diagram of the front view sectional structure of the present invention; Figure 5 It is a schematic diagram of the etching gas supply mechanism of the present invention; Figure 6 [[ID=2l]]It is a schematic diagram of the magnetic enhancement mechanism of the present invention; Figure 7 It is a schematic diagram of the rotating sleeve and the first gear of the present invention; Figure 8 It is a schematic diagram of the fixed table of the present invention; ] Figure 9 It is a schematic diagram of the cross-section of the conical metal block of the present invention; Figure 10 It is a schematic diagram of the rotating ring and the ring gear of the present invention; Figure 11 It is a schematic diagram of the accommodation cavity and the elastic connecting member of the present invention; Figure 12 It is a schematic diagram of the cooling mechanism of the present invention; Figure 13 It is a schematic diagram of the cooling cavity of the present invention; Figure 14 It is a schematic diagram of the first state of multiple conical metal blocks of the present invention; Figure 15 It is a schematic diagram of the second state of multiple conical metal blocks of the present invention; Figure 16Schematic diagram of the wire structure of the present invention.

[0019] The reference numerals in this application are as follows: 10, etching chamber; 101, working chamber; 11, cylinder; 111, plasma chamber; 12, spiral coil; 1201, cooling chamber; 13, base; 18, workbench; 19, frame; 2, etching gas supply mechanism; 201, connecting frame; 202, first rotation driving member; 203, moving rod; 204, connecting plate; 205, sleeve rod; 206, rotating table; 207, supply pipe; 208, second rotation driving member; 209, third rotation driving member; 210, second gear; 211, third gear; 212, fourth gear; 213, sleeve; 214, fifth gear; 3, first power supply mechanism; 301, first power supply; 302, wire; 4, second power supply mechanism; 401, second power supply; 5, magnetic enhancement mechanism; 501, conical metal block; 502, connecting rod; 51, flipping assembly; 511, fixed table; 5111, groove; 5112, square groove; 5113, sliding groove; 512, rotating sleeve; 5121, installation groove; 5122, accommodating chamber; 513, straightening block; 514, connecting rod; 515, sliding rod; 516, rotating disk; 5161, sliding groove; 52, rotating assembly; 521, first gear; 522, rotating ring; 523, ring teeth; 524, elastic connecting member; 6, cooling mechanism; 601, box body; 602, installation sleeve; 603, pipeline; 604, circulation pump; 7, air extraction mechanism; 701, air extraction pump. Detailed implementation manners

[0020] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0021] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0022] In addition, the terms "first" and "second" are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0023] Embodiment 1: As Figures 1-16 shown, this embodiment provides a plasma etching device, which includes a frame 19. A workbench 18 is installed on the frame 19. An etching chamber 10 is provided below the workbench 18. A cylinder 11 is installed above the workbench 18. A working chamber 101 is provided in the etching chamber 10. A plasma chamber 111 is provided in the cylinder 11. A spiral coil 12 is sleeved outside the cylinder 11. An etching gas supply mechanism 2 and a first power supply mechanism 3 are provided on the frame 19. A base 13 is provided in the working chamber 101. A second power supply mechanism 4 is provided on the base 13. An air extraction mechanism 7 is provided on the frame 19; the air extraction mechanism 7 includes an air extraction pump 701. An opening (not shown in the figure) is provided on one side of the etching chamber 10. This opening can be opened and closed, which is a conventional technical means in this field and will not be described in detail here; a magnetic enhancement mechanism 5 is provided in the working chamber 101. The magnetic enhancement mechanism 5 enhances the induced magnetic field generated by the spiral coil 12. The base 13 can be lifted and lowered, which is a conventional technical means in this field and will not be described in detail here; In this embodiment, by opening the opening on one side of the etching chamber 10, the substrate is placed on the base 13, and then the base 13 is driven to rise to the processing position. The air extraction mechanism 7 exhausts the gas in the plasma chamber 111 and the working chamber 101 to make the plasma chamber 111 and the working chamber 101 in a negative pressure state.

[0024] The magnetic enhancement mechanism 5 includes: a conical metal block 501. A plurality of conical metal blocks 501 are arranged annularly and in contact with each other; a connecting rod 502. The connecting rod 502 is installed on the conical metal block 501; a flipping assembly 51. The flipping assembly 51 drives the conical metal block 501 to flip; a rotating assembly 52. The rotating assembly 52 drives the conical metal block 501 to rotate.

[0025] In this embodiment, the first power supply mechanism 3 supplies high-frequency power to the spiral coil 12 to generate an induced magnetic field in the plasma chamber 111; An etching gas (such as SF6 gas) is supplied into the plasma chamber 111 through the supply pipe 207. The induction magnetic field ionizes the etching gas. At the same time, multiple groups of conical metal blocks 501 arranged in a ring and in contact with each other are located inside the spiral coil 12, enhancing the intensity of the induction magnetic field generated by the spiral coil 12 in the plasma chamber 111, thereby enhancing the ionization intensity of the etching gas. The multiple groups of conical metal blocks 501 arranged in a ring and in contact with each other are equivalent to an iron core and will enhance the intensity of the induction magnetic field generated by the spiral coil 12.

[0026] The flipping assembly 51 includes: a fixed table 511, the fixed table 511 is installed in the working chamber 101. Specifically, the fixed table 511 is connected in the working chamber 101 through a fixing frame (not shown in the figure). A plurality of grooves 5111, a plurality of square grooves 5112 and a sliding groove 5113 are formed on the fixed table 511; a rotating sleeve 512, the rotating sleeve 512 is rotatably arranged in the groove 5111, a connecting rod 502 is rotatably arranged in the rotating sleeve 512, and an installation groove 5121 is formed at the top of the rotating sleeve 512; a straightening block 513, the straightening block 513 is slidably arranged in the square groove 5112; a connecting rod 514, the connecting rod 514 is rotatably arranged between the straightening block 513 and the installation groove 5121; a sliding rod 515, the sliding rod 515 is installed on the straightening block 513, and the sliding rod 515 slides in the sliding groove 5113.

[0027] A rotating disc 516 is rotatably arranged on the fixed table 511, and a plurality of sliding grooves 5161 are formed on the rotating disc 516. The sliding rod 515 slides in the sliding grooves 5161; In this embodiment, the first rotation driving member 202 drives the moving rod 203 to rotate, driving the rotating disc 516 to rotate. The sliding rod 515 slides in the sliding groove 5113, driving the straightening block 513 to slide inwards along the square groove 5112. Through the connecting rod 514, the rotating sleeve 512 is pulled to rotate, pulling the conical metal block 501 to the horizontal state (the state is as Figure 14 shown). In this way, the etching gas in the plasma chamber 111 is agitated, enhancing the ionization intensity of the etching gas.

[0028] The rotating assembly 52 includes: a first gear 521, the first gear 521 is installed on the connecting rod 502; a rotating ring 522, the rotating ring 522 is rotatably arranged on the fixed table 511; a ring gear 523, the ring gear 523 is installed at the bottom of the rotating ring 522, and a receiving cavity 5122 is formed in the rotating sleeve 512; an elastic connecting member 524, the elastic connecting member 524 is sleeved outside the connecting rod 502, one end of the elastic connecting member 524 is connected to the connecting rod 502, and the other end thereof is connected to the receiving cavity 5122. It should be noted that: without the action of an external force, the elastic torsion of the elastic connecting member 524 drives the conical metal block 501 to be in the initial state ( Figure 14 the state shown).

[0029] The etching gas supply mechanism 2 includes: a connecting frame 201 which is installed inside the frame 19; a first rotation driving member 202 which is installed on the connecting frame 201; a moving rod 203 which is installed at the output end of the first rotation driving member 202, and the moving rod 203 is connected to the rotating disk 516. A connecting plate 204 which is installed on the rotating ring 522; a sleeve rod 205 which is installed on the connecting plate 204, and the sleeve rod 205 is sleeved outside the moving rod 203; a rotating table 206 which is rotatably arranged on the top of the cylinder 11; a supply pipe 207 which is arranged on the rotating table 206.

[0030] A second rotation driving member 208 and a third rotation driving member 209 are installed on the connecting frame 201. A second gear 210 is installed at the output end of the second rotation driving member 208, and a third gear 211 is installed at the output end of the third rotation driving member 209. A fourth gear 212 is installed on the sleeve rod 205, and the second gear 210 and the fourth gear 212 are meshed; a sleeve 213 is installed on the rotating table 206, the sleeve 213 is sleeved outside the sleeve rod 205, and a fifth gear 214 is installed on the sleeve 213, and the third gear 211 and the fifth gear 214 are meshed.

[0031] In this embodiment, the third rotation driving member 209 drives the third gear 211 to rotate. Since the third gear 211 and the fifth gear 214 are meshed, it drives the sleeve 213 and the rotating table 206 to rotate, and adjusts the position of the supply pipe 207 on the plasma chamber 111. When the supply pipe 207 supplies the etching gas into the plasma chamber 111, the etching gas is evenly arranged in the plasma chamber 111.

[0032] The first power supply mechanism 3 includes: a first power supply 301 which is installed inside the frame 19, and the first power supply 301 is connected to the spiral coil 12; a wire 302 is arranged on the connecting rod 502; the second power supply mechanism 4 includes a second power supply 401, and the second power supply 401 supplies power to the base 13 and the wire 302.

[0033] In this embodiment, the second power supply mechanism 4 applies high-frequency power to the base 13 to apply a bias potential to the substrate on the base 13, and the ions in the plasma chamber 111 irradiate towards the substrate to perform ion-assisted etching on the substrate.

[0034] In this embodiment, the first rotation driving member 202 drives the moving rod 203 to drive the rotating disk 516 to rotate. The sliding rod 515 slides in the sliding groove 5113, drives the straightening block 513 to slide inwards along the rectangular groove 5112, and pulls the rotating sleeve 512 to rotate through the connecting rod 514, and pulls the conical metal block 501 to flip to the horizontal state (the state is as Figure 14As shown in the figure, the first gear 521 meshes with the ring gear 523 at this time; The second rotary drive member 208 drives the second gear 210 to rotate, driving the fourth gear 212, the sleeve rod 205, and the ring gear 523 to rotate. Since the first gear 521 meshes with the ring gear 523, the connecting rod 502 and the conical metal block 501 are driven to rotate, causing one side of the conical metal block 501 to face downward (the state is as Figure 15 shown); The second power supply mechanism 4 stops applying a bias potential to the substrate on the base 13, and the second power supply mechanism 4 applies a bias potential to the conical metal block 501 through the wire 302, causing the ions in the plasma chamber 111 to move upward. Then, the second power supply mechanism 4 applies a bias potential to the substrate on the base 13, and the second power supply mechanism 4 stops applying a bias potential to the conical metal block 501; the ions in the plasma chamber 111 irradiate the substrate again, performing ion-assisted etching on the substrate. This process is repeated to enhance the ion etching effect on the substrate.

[0035] It should be noted that: by making one side of the conical metal block 501 face downward, the area facing downward is increased, enhancing the adsorption effect on the ions (moving upward), and the exhaust mechanism 7 can be closed according to requirements.

[0036] Embodiment 2: As Figures 1-16 shown, where the same or corresponding components as those in Embodiment 1 adopt the corresponding reference numerals in Embodiment 1. For the sake of simplicity, only the differences from Embodiment 1 will be described below. The difference between this Embodiment 2 and Embodiment 1 is that: This embodiment further includes a cooling mechanism 6. The cooling mechanism 6 cools the spiral coil 12. The cooling mechanism 6 includes: a box body 601, which is installed on the frame 19; a mounting sleeve 602, which is sleeved outside the two end portions of the spiral coil 12; a pipe 603, which is arranged between the box body 601 and the mounting sleeve 602; a cooling cavity 1201 is opened in the spiral coil 12, an insulating coolant is provided in the box body 601, and a circulation pump 604 is provided on the pipe 603.

[0037] In this embodiment, the circulation pump 604 pumps the insulating coolant in the box body 601 into the cooling cavity 1201 through the pipe 603 to cool the spiral coil 12, enhancing the stable operation of the device. The flow direction of the insulating coolant is: box body 601 → pipe 603 → circulation pump 604 → mounting sleeve 602 → cooling cavity 1201 → mounting sleeve 602 → pipe 603 → box body 601.

[0038] Embodiment 3: This embodiment provides an etching method for a plasma etching device, including the following steps: Step 1, Loading Process: Open the opening on one side of the etching chamber 10, place the substrate on the base 13, and then drive the base 13 to rise to the processing position; Step 2, Exhausting Process: Exhaust the gas in the plasma chamber 111 and the working chamber 101 through the exhaust mechanism 7 to make the inside of the plasma chamber 111 and the working chamber 101 in a negative pressure state; Step 3, Plasma Chemical Process of Etching Gas: The first power supply mechanism 3 supplies high-frequency power to the spiral coil 12 to generate an induced magnetic field in the plasma chamber 111; Supply the etching gas (such as SF6 gas) into the plasma chamber 111 through the supply pipe 207. The induced magnetic field ionizes the etching gas. At the same time, multiple groups of conical metal blocks 501 arranged in a ring and in contact with each other are located inside the spiral coil 12, enhancing the intensity of the induced magnetic field generated by the spiral coil 12 in the plasma chamber 111, and further enhancing the ionization intensity of the etching gas; Step 4, Adjusting Process: The third rotation driving member 209 drives the third gear 211 to rotate. Since the third gear 211 meshes with the fifth gear 214, it drives the sleeve 213 and the rotating table 206 to rotate, adjusting the position of the supply pipe 207 on the plasma chamber 111. When the supply pipe 207 supplies the etching gas into the plasma chamber 111, the etching gas is evenly distributed in the plasma chamber 111; Step 5, Flowing Process: The first rotation driving member 202 drives the moving rod 203 to rotate, driving the rotating disk 516 to rotate. The sliding rod 515 slides in the sliding groove 5113, driving the straightening block 513 to slide inward along the square groove 5112. Pull the rotating sleeve 512 to rotate through the connecting rod 514, pulling the conical metal block 501 to turn to the horizontal state (the state is as Figure 14 shown), and so on, stirring the etching gas in the plasma chamber 111 to enhance the ionization intensity of the etching gas; Step 6, Etching Process: The second power supply mechanism 4 applies high-frequency power to the base 13 to apply a bias potential to the substrate on the base 13. The ions in the plasma chamber 111 irradiate towards the substrate to perform ion-assisted etching on the substrate; Step 7, Etching Enhancement Process: The first rotation driving member 202 drives the moving rod 203 to drive the rotating disk 516 to rotate. The sliding rod 515 slides in the sliding groove ********, driving the straightening block 513 to slide inward along the square groove 5112. Pull the rotating sleeve 512 to rotate through the connecting rod 514, pulling the conical metal block 501 to turn to the horizontal state (the state is as Figure 14 shown), and at this time, the first gear 521 meshes with the ring teeth 523; The second rotation driving member 208 drives the second gear 210 to rotate, driving the fourth gear 212, the sleeve rod 205, and the ring gear 523 to rotate. Since the first gear 521 meshes with the ring gear 523, the connecting rod 502 and the conical metal block 501 are driven to rotate, causing one side of the conical metal block 501 to face downward (the state is as shown in Figure 15 ); The second power supply mechanism 4 stops applying a bias potential to the substrate on the base 13. The second power supply mechanism 4 applies a bias potential to the conical metal block 501 through the wire 302, causing the ions in the plasma chamber 111 to move upward. Then, the second power supply mechanism 4 applies a bias potential to the substrate on the base 13, and the second power supply mechanism 4 stops applying a bias potential to the conical metal block 501; the ions in the plasma chamber 111 irradiate the substrate again, performing ion-assisted etching on the substrate. This process is repeated to enhance the ion etching effect on the substrate.

[0039] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A plasma etching device, comprising a frame (19), characterized in that, A workbench (18) is installed on the frame (19). An etching tank (10) is provided below the workbench (18). A cylinder (11) is installed above the workbench (18). A working chamber (101) is provided inside the etching tank (10). A plasma chamber (111) is provided inside the cylinder (11). A spiral coil (12) is sleeved outside the cylinder (11). An etching gas supply mechanism (2) and a first power supply mechanism (3) are provided on the frame (19). A base (13) is provided inside the working chamber (101). A second power supply mechanism (4) is provided on the base (13); A magnetic enhancement mechanism (5) is provided inside the working chamber (101), and the magnetic enhancement mechanism (5) enhances the induced magnetic field generated by the spiral coil (12).

2. The plasma etching device according to claim 1, wherein The magnetic enhancement mechanism (5) includes: Conical metal blocks (501), and a plurality of the conical metal blocks (501) are arranged in a ring and are in contact with each other; Connecting rods (502), and the connecting rods (502) are installed on the conical metal blocks (501); A flipping assembly (51), and the flipping assembly (51) drives the conical metal blocks (501) to flip; A rotating assembly (52), and the rotating assembly (52) drives the conical metal blocks (501) to rotate.

3. The plasma etching apparatus according to claim 2, wherein The flipping assembly (51) includes: A fixed platform (511), the fixed platform (511) is installed inside the working chamber (101), and a plurality of grooves (5111), a plurality of square grooves (5112) and a sliding groove (5113) are formed on the fixed platform (511); A rotating sleeve (512), the rotating sleeve (512) is rotatably arranged in the groove (5111), the connecting rod (502) is rotatably arranged in the rotating sleeve (512), and an installation groove (5121) is formed at the top of the rotating sleeve (512); A straightening block (513), and the straightening block (513) is slidably arranged in the square groove (5112); A connecting rod (514), and the connecting rod (514) is rotatably arranged between the straightening block (513) and the installation groove (5121); A sliding rod (515), the sliding rod (515) is installed on the straightening block (513), and the sliding rod (515) slides in the sliding groove (5113).

4. The plasma etching apparatus according to claim 3, wherein A rotating disk (516) is rotatably arranged on the fixed platform (511), and a plurality of sliding grooves (5161) are formed on the rotating disk (516), and the sliding rod (515) slides in the sliding grooves (5161); The rotating assembly (52) includes: A first gear (521), and the first gear (521) is installed on the connecting rod (502); A rotating ring (522), and the rotating ring (522) is rotatably arranged on the fixed platform (511); Ring teeth (523), and the ring teeth (523) are installed at the bottom of the rotating ring (522), and a receiving cavity (5122) is formed inside the rotating sleeve (512); Elastic connecting member (524), the elastic connecting member (524) is sleeved outside the connecting rod (502), one end of the elastic connecting member (524) is connected to the connecting rod (502), and the other end thereof is connected to the accommodating cavity (5122).

5. A plasma etching apparatus according to claim 4, characterized in that, The etching gas supply mechanism (2) includes: Connecting frame (201), the connecting frame (201) is installed inside the frame (19); First rotary drive member (202), the first rotary drive member (202) is installed on the connecting frame (201); Moving rod (203), the moving rod (203) is installed at the output end of the first rotary drive member (202), and the moving rod (203) is connected to the rotary disk (516); Connecting plate (204), the connecting plate (204) is installed on the rotary ring (522); Sleeve rod (205), the sleeve rod (205) is installed on the connecting plate (204), and the sleeve rod (205) is sleeved outside the moving rod (203); Rotating table (206), the rotating table (206) is rotatably arranged on the top of the cylinder (11); Supply pipe (207), the supply pipe (207) is arranged on the rotating table (206).

6. A plasma etching apparatus according to claim 5, characterized in that, A second rotary drive member (208) and a third rotary drive member (209) are installed on the connecting frame (201). A second gear (210) is installed at the output end of the second rotary drive member (208), and a third gear (211) is installed at the output end of the third rotary drive member (209). A fourth gear (212) is installed on the sleeve rod (205), and the second gear (210) and the fourth gear (212) are meshed; A sleeve (213) is installed on the rotating table (206), the sleeve (213) is sleeved outside the sleeve rod (205), and a fifth gear (214) is installed on the sleeve (213), and the third gear (211) and the fifth gear (214) are meshed.

7. A plasma etching apparatus according to claim 6, characterized in that, It further includes a cooling mechanism (6), and the cooling mechanism (6) cools the spiral coil (12).

8. A plasma etching apparatus according to claim 7, characterized in that, The cooling mechanism (6) includes: Box body (601), the box body (601) is installed on the frame (19); Mounting sleeve (602), the mounting sleeve (602) is sleeved outside the two end portions of the spiral coil (12); Pipe (603), the pipe (603) is arranged between the box body (601) and the mounting sleeve (602); a cooling cavity (1201) is formed in the spiral coil (12), an insulating coolant is provided in the box body (601), and a circulation pump (604) is provided on the pipe (603).

9. A plasma etching apparatus according to claim 8, characterized in that, The first power supply mechanism (3) includes: First power supply (301), the first power supply (301) is installed inside the frame (19), and the first power supply (301) is connected to the spiral coil (12); A wire (302) is provided on the connecting rod (502); The second power supply mechanism (4) includes a second power supply source (401), and the second power supply source (401) supplies power to the base station (13) and the wire (302).

10. The etching method of a plasma etching device according to claim 9, characterized in that, It includes the following steps: Step 1, loading process: By opening the opening on one side of the etching chamber (10), placing the substrate on the base station (13), and then driving the base station (13) to rise to the processing position; Step 2, air extraction process: The air extraction mechanism (7) exhausts the gas in the plasma chamber (111) and the working chamber (101) to make the inside of the plasma chamber (111) and the working chamber (101) in a negative pressure; Step 3, etching gas plasma process: The first power supply mechanism (3) supplies high-frequency power to the spiral coil (12) to generate an induced magnetic field in the plasma chamber (111); The etching gas is supplied into the plasma chamber (111) through the supply pipe (207), and the induced magnetic field ionizes the etching gas. At the same time, multiple groups of tapered metal blocks (501) arranged in a ring and in contact with each other are located in the spiral coil (12), enhancing the intensity of the induced magnetic field generated by the spiral coil (12) in the plasma chamber (111), and further enhancing the intensity of the etching gas plasma; Step 4, adjustment process: The third rotation driving member (209) drives the third gear (211) to rotate. Since the third gear (211) and the fifth gear (214) are engaged, it drives the sleeve (213) and the rotating table (206) to rotate, adjusting the position of the supply pipe (207) on the plasma chamber (111). When the supply pipe (207) supplies the etching gas into the plasma chamber (111), the etching gas is evenly arranged in the plasma chamber (111); Step 5, flow process: The first rotation driving member (202) drives the moving rod (203) to rotate to drive the rotating disk (516) to rotate. The sliding rod (515) slides in the sliding groove (5113), driving the straightening block (513) to slide inward along the square groove (5112). Through the connecting rod (514), the rotating sleeve (512) is pulled to rotate, pulling the tapered metal block (501) to flip to the horizontal state. In this way, it reciprocates to stir the etching gas in the plasma chamber (111), enhancing the intensity of the etching gas plasma; Step 6, etching process: The second power supply mechanism (4) applies high-frequency power to the base station (13) to apply a bias potential to the substrate on the base station (13). The ions in the plasma chamber (111) irradiate towards the substrate to perform ion-assisted etching on the substrate; Step 7, etching enhancement process: The first rotation driving member (202) drives the moving rod (203) to drive the rotating disk (516) to rotate. The sliding rod (515) slides in the sliding groove (5113), driving the straightening block (513) to slide inward along the square groove (5112). Through the connecting rod (514), the rotating sleeve (512) is pulled to rotate, pulling the tapered metal block (501) to flip to the horizontal state. At this time, the first gear (521) is engaged with the ring teeth (523); The second rotation driving member (208) drives the second gear (210) to rotate, driving the fourth gear (212), the sleeve rod (205), and the ring gear (523) to rotate. Since the first gear (521) meshes with the ring gear (523), it drives the connecting rod (502) and the conical metal block (501) to rotate, causing one side of the conical metal block (501) to face downward; The second power supply mechanism (4) stops applying a bias potential to the substrate on the base (13), and the second power supply mechanism (4) applies a bias potential to the conical metal block (501) through the wire (302), causing the ions in the plasma chamber (111) to move upward. Then, the second power supply mechanism (4) applies a bias potential to the substrate on the base (13), and the second power supply mechanism (4) stops applying a bias potential to the conical metal block (501); the ions in the plasma chamber (111) irradiate the substrate again, performing ion-assisted etching on the substrate. This process is repeated to enhance the ion etching effect on the substrate.

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