Plating device

Abstract

The present application provides a kind of plating device.The plating device has: substrate holder, it is configured to be able to rotate around first rotation axis in plating;Anode;Resistance body, it is resistance body for electric field adjustment, with multiple through holes communicated with the anode side of the resistance body and substrate holder side;And at least one rotatable component, be arranged between the anode and the resistance body, for electric field adjustment, the at least one rotatable component is respectively configured to be able to rotate around second rotation axis along the direction of intersection with the first rotation axis, the at least one rotatable component is respectively configured to, from the direction of the first rotation axis, it can be rotated between first position and second position, the first position is the position of overlapping with part of the multiple through holes of the resistance body, the second position is compared with the first position, and the overlap of each rotatable component with the multiple through holes is smaller.

Description

Technical Field

[0001] This application relates to a plating apparatus. Background Technology

[0002] As an example of a plating apparatus using electroplating, a so-called immersion plating apparatus is known in which a substrate (e.g., a semiconductor wafer) and an anode are positioned horizontally opposite each other (see, for example, Patent Document 1). Another example of a plating apparatus using electroplating is a cup-type plating apparatus (see, for example, Patent Document 2). In the cup-type plating apparatus, a substrate held by a substrate holder is immersed in a plating solution with the plating surface facing down. A voltage is applied between the substrate and the anode, causing a conductive film (plating film) to deposit on the surface of the substrate.

[0003] In such plating apparatuses, the substrate typically has electrical contacts at its periphery. Due to varying distances from these contacts, a potential difference arises between the periphery and the center of the substrate during the plating process, potentially causing deviations in the plating current. Therefore, it is known that, in order to improve the uniformity of the thickness of the coating formed on the substrate, a resistive element for adjusting the electric field is placed between the substrate and the anode. Furthermore, to allow for more flexible electric field adjustment, a plating apparatus has been proposed that allows for variable-size holes in the resistive element (see Patent Document 3).

[0004] Patent Document 1: Japanese Patent No. 7462125

[0005] Patent Document 2: Japanese Patent No. 7079388

[0006] Patent Document 3: Japanese Patent No. 7204060

[0007] In plating apparatuses, besides the distance to electrical contacts, the thickness of the coating can also deviate due to the resist pattern formed on the substrate. That is, if the plating surface of the substrate includes areas where resist openings are not formed (non-opening areas), the plating current will not flow through these non-opening areas, and the current will concentrate at the periphery of these areas, resulting in a thicker coating. As a specific example, when resist openings are formed only in a roughly cross-shaped area on the substrate, no current flows through the areas outside the cross, potentially compromising the uniformity of the coating thickness. Here, for example, in Patent Document 1, an anode cover capable of adjusting the size of the anode opening is used to adjust the electric field between the anode and the substrate. However, existing structures are designed to address coating thickness deviations caused by the structure of the plating apparatus, such as electrical contacts, and sometimes cannot adequately address coating thickness deviations caused by the resist pattern on the substrate. Alternatively, virtual openings can be created in non-opening areas to achieve uniform coating thickness. However, this would require processing to create the virtual openings and would result in unnecessary coating at the virtual openings, thus increasing the cost of the coating process. Summary of the Invention

[0008] The present invention was made in view of the above-mentioned problems. One of its objectives is to provide a coating apparatus capable of improving the uniformity of the thickness of the coating formed on the object to be coated.

[0009] According to one aspect of the present invention, a plating apparatus is provided. The plating apparatus includes: a plating tank; a substrate holder configured to hold a substrate and rotatable about a first rotation axis during plating; an anode disposed in the plating tank opposite to the substrate held by the substrate holder; a resistor disposed between the anode and the substrate holder for adjusting an electric field, having a plurality of through holes communicating with both the anode side and the substrate holder side of the resistor; and at least one rotatable member disposed between the anode and the resistor for adjusting the electric field. Each of the at least one rotatable member is configured to rotate about a second rotation axis extending in a direction intersecting the first rotation axis. Each of the at least one rotatable member is configured to rotate between a first position and a second position when viewed from the direction extending from the first rotation axis. The first position is a position overlapping a portion of the plurality of through holes of the resistor, and the second position has less overlap between each of the rotatable members and the plurality of through holes compared to the first position. Attached Figure Description

[0010] Figure 1 This is a perspective view showing the overall structure of the plating apparatus of this embodiment.

[0011] Figure 2This is a top view showing the overall structure of the plating apparatus of this embodiment.

[0012] Figure 3 This is a longitudinal sectional view schematically illustrating the structure of the plating module in this embodiment.

[0013] Figure 4 This is an enlarged bottom view schematically showing the surface of the resistor closest to the anode in this embodiment.

[0014] Figure 5 This is a schematic diagram illustrating the rotation of multiple rotatable components.

[0015] Figure 6 This is a schematic diagram showing a rotatable component and an electric field that are tilted relative to the rotation axis of the substrate holder.

[0016] Figure 7 This is a schematic diagram showing a rotatable component and an electric field arranged along the rotation axis of the substrate holder.

[0017] Figure 8 This is a schematic bottom view showing the rotatable component and drive mechanism configured with a rotation axis perpendicular to the substrate holder.

[0018] Figure 9 This is a schematic bottom view showing the through hole of the rotatable component and resistor arranged perpendicular to the rotation axis of the substrate holder.

[0019] Figure 10 This is a schematic bottom view of a rotatable component that is tilted relative to the rotation axis of the substrate holder.

[0020] Figure 11 This is a schematic bottom view showing the through-hole of the rotatable component and resistor arranged along the rotation axis of the substrate holder.

[0021] Figure 12 This is a flowchart illustrating an example of a method for setting the action scheme of a rotatable component, an anode cover, and a shield based on a control module.

[0022] Figure 13 It is a schematic diagram showing a resist pattern formed on the plated surface of a substrate in one embodiment.

[0023] Figure 14 This is a flowchart illustrating an example of a method for setting the action schemes of rotatable components, anode covers, and shielding bodies during the plating process based on a control module.

[0024] Figure 15 This is a schematic bottom view showing a modified example of a rotatable component. Detailed Implementation

[0025] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or equivalent constituent elements are labeled with the same reference numerals and repeated descriptions are omitted.

[0026] <Overall Structure of the Plating Equipment>

[0027] Figure 1 This is a perspective view showing the overall structure of the plating apparatus 1000 of this embodiment. Figure 2 This is a top view showing the overall structure of the plating apparatus 1000 according to this embodiment. (As shown) Figure 1 and Figure 2 As shown, the plating apparatus 1000 includes: a loading port 100, a handling robot 110, an alignment device 120, a pre-wetting module 200, a pre-immersion module 300, a plating module 400, a cleaning module 500, a rotary rinsing and drying device 600, a handling device 700, and a control module 800.

[0028] The loading port 100 is a module used to load substrates, which are objects to be plated and housed in boxes such as FOUP (not shown), into the plating apparatus 1000, or to remove substrates from the plating apparatus 1000 into the boxes. In this embodiment, four loading ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the loading ports 100 are arbitrary. The handling robot 110 is a robot for handling substrates and is configured to exchange substrates between the loading ports 100, the alignment device 120, and the handling device 700. When exchanging substrates between the handling robot 110 and the handling device 700, the handling robot 110 and the handling device 700 can exchange substrates via a temporary stage (not shown).

[0029] Aligner 120 is a module used to align the orientation plane, notch, and other positions of the substrate with a predetermined direction. In this embodiment, two alignment devices 120 are arranged side by side in the horizontal direction, but the number and arrangement of alignment devices 120 are arbitrary. Pre-wetting module 200 uses a treatment liquid (pre-wetting liquid) such as pure water or degassed water to wet the substrate surface to be plated before plating, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. Pre-wetting module 200 is configured to perform a pre-wetting process, which facilitates the supply of plating liquid to the inside of the pattern by replacing the treatment liquid inside the pattern with plating liquid during plating. In this embodiment, two pre-wetting modules 200 are arranged side by side in the vertical direction, but the number and arrangement of pre-wetting modules 200 are arbitrary.

[0030] The pre-impregnation module 300 is configured to perform a pre-impregnation process, which involves, for example, etching away high-resistivity oxide films such as those on the seed layer surface of the substrate to be plated before plating with a treatment solution such as sulfuric acid or hydrochloric acid, and cleaning or activating the surface of the substrate to be plated. In this embodiment, two pre-impregnation modules 300 are arranged side-by-side in the vertical direction, but the number and arrangement of the pre-impregnation modules 300 are arbitrary. The plating module 400 performs the plating process on the substrate. In this embodiment, there are two sets of twelve plating modules 400, with three arranged side-by-side in the vertical direction and four arranged side-by-side in the horizontal direction, for a total of twenty-four plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0031] The cleaning module 500 is configured to clean the substrate to remove residual plating solution or the like after plating. In this embodiment, two cleaning modules 500 are arranged side-by-side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The rotary rinsing and drying device 600 is a module for rotating and drying the cleaned substrate at high speed. In this embodiment, two rotary rinsing and drying devices are arranged side-by-side in the vertical direction, but the number and arrangement of the rotary rinsing and drying devices are arbitrary. The conveying device 700 is a device for conveying the substrate between multiple modules within the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000, and can be configured, for example, by a general-purpose computer or a dedicated computer equipped with an input / output interface for the operator.

[0032] An example of a series of plating processes based on the plating apparatus 1000 will be described. First, a substrate stored in a box is moved into the loading port 100. Next, a handling robot 110 removes the substrate from the box in the loading port 100 and transports the substrate to the aligner 120. The aligner 120 aligns the orientation plane, notches, and other positions of the substrate with a predetermined direction. The handling robot 110 then transfers the substrate, which has been aligned by the aligner 120, to the handling device 700.

[0033] The transport device 700 transports the substrate received from the transport robot 110 to the pre-humidification module 200. The pre-humidification module 200 performs a pre-humidification treatment on the substrate. The transport device 700 then transports the pre-humidified substrate to the pre-impregnation module 300. The pre-impregnation module 300 performs a pre-impregnation treatment on the substrate. The transport device 700 then transports the pre-impregnation treated substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0034] The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transport device 700 then transports the cleaned substrate to the rotary rinsing and drying device 600. The rotary rinsing and drying device 600 dries the substrate. The transport device 700 then transfers the dried substrate to the transport robot 110. The transport robot 110 transports the substrate received from the transport device 700 to a cassette in the loading port 100. Finally, the cassette containing the substrate is removed from the loading port 100.

[0035] <Structure of the plating module>

[0036] Next, the structure of the plating module 400 will be described. Since the twenty-four plating modules 400 in this embodiment have the same structure, only one plating module 400 will be described. Figure 3 This is a longitudinal sectional view schematically illustrating the structure of the plating module 400 in this embodiment. (See attached image.) Figure 3 As shown, the plating module 400 includes a plating tank 410 for containing plating liquid. The plating tank 410 is configured to include a cylindrical inner tank 412 with an opening at the top and an outer tank 414 disposed around the inner tank 412 to store plating liquid overflowing from the upper edge of the inner tank 412.

[0037] The plating module 400 includes a substrate holder 440 for holding the substrate Wf with the plating surface Wf-a facing downwards. The substrate holder 440 also includes a power supply contact for supplying power to the substrate Wf from a power source (not shown). The plating module 400 includes a lifting mechanism 442 for raising and lowering the substrate holder 440. Additionally, the plating module 400 includes a rotation mechanism 448 for rotating the substrate holder 440 about a first rotation axis Ax1 during plating. In this embodiment, the first rotation axis Ax1 preferably extends in a vertical direction. The first rotation axis Ax1 may also be aligned with the vertically extending central axis of the inner groove 412. The lifting mechanism 442 and the rotation mechanism 448 can be implemented using known mechanisms such as a motor.

[0038] The plating apparatus 1000 is a cup-type electroplating apparatus in which a substrate Wf (e.g., a semiconductor wafer) held by a substrate holder 440 with the plating surface Wf-a facing downwards is immersed in a plating solution, and a voltage is applied between the substrate Wf and the anode 430 to deposit a conductive film on the surface of the substrate Wf. The plating process is performed while the substrate Wf is rotated about a first rotation axis Ax1, thereby making the thickness of the plating formed on the substrate Wf more uniform.

[0039] The plating module 400 includes a diaphragm 420 that divides the interior of the inner tank 412 vertically. The interior of the inner tank 412 is divided into a cathode region 422 and an anode region 424 by the diaphragm 420. The cathode region 422 and the anode region 424 are respectively filled with plating solution. In addition, in this embodiment, an example with the diaphragm 420 is shown, but the diaphragm 420 may not be provided.

[0040] An anode 430 is provided on the bottom surface of the inner tank 412 of the anode region 424. The anode 430 is disposed in the plating tank 410 opposite to the substrate Wf held by the substrate holder 440. In addition, an anode cover 426 for adjusting the electrolysis between the anode 430 and the substrate Wf is disposed in the anode region 424. The anode cover 426 is, for example, a generally plate-shaped component made of dielectric material, and is disposed on the front surface (above) of the anode 430. The anode cover 426 has an opening, namely an anode opening 427, through which the current flowing between the anode 430 and the substrate Wf passes. Furthermore, in this embodiment, an example with an anode cover 426 is shown, but the anode cover 426 may not be provided. Also, the aforementioned diaphragm 420 may be provided in the anode opening 427.

[0041] In the cathode region 422, a resistor 450 is disposed between the anode 430 and the substrate holder 440. In this embodiment, the resistor 450 is positioned opposite the diaphragm 420. The resistor 450 is a component used to adjust the electric field in the plating solution and to achieve uniformity of the plating process on the plating surface Wf-a of the substrate Wf. In the illustrated example, the resistor 450 is cylindrical, and its cylindrical axis is approximately aligned with the first rotation axis Ax1. Furthermore, the shape of the resistor 450 is not particularly limited as long as plating can be performed with the desired precision.

[0042] The resistor 450 is formed of a component with a resistivity higher than that of the plating solution. This component is preferably a dielectric. The resistor 450 may contain metal or resin. The resistor 450 for electric field adjustment has a first surface 451 on the anode side and a second surface 452 on the substrate holder side.

[0043] Figure 4 This is an enlarged bottom view schematically showing the first surface 451 of the anode side of the resistor 450. Multiple through holes 453 are formed in the resistor 450. The through holes 453 connect the first surface 451 and the second surface 452 of the resistor 450, forming a path for the plating solution and ions in the plating solution to pass through. In other words, the resistor 450 connects the cathode region 422 on the anode side of the resistor 450 and the cathode region 422 on the substrate holder side of the resistor 450 via the through holes 453 in a manner that allows the plating solution and ions in the plating solution to move. The multiple through holes 453 communicate with the anode side and the substrate holder side of the resistor 450, respectively. Figure 4 In the example, the through holes 453 are arranged regularly with a constant distance between adjacent through holes 453, but the pattern of the through holes 453 is not particularly limited as long as it can be plated with the desired precision, and the through holes 453 can also be arranged randomly.

[0044] The resistor 450 may have a porous structure based on multiple through holes 453. With such a structure, the holes are distributed, and by adjusting the current through these holes, the thickness of the plating formed on the substrate Wf can be made uniform.

[0045] like Figure 3 As shown, the plating module 400 includes at least one rotatable component 470. In this embodiment, the plating module 400 has multiple rotatable components 470. The rotatable component 470 is a resistive component used to adjust the electric field in the plating solution and achieve uniformity of the plating process on the plating surface Wf-a of the substrate Wf. The rotatable component 470 for adjusting the electric field is formed of a component with a resistivity higher than that of the plating solution. This component is preferably a dielectric. The rotatable component 470 can contain metal or resin.

[0046] A rotatable component 470 is disposed between the anode 430 and the resistor 450. The rotatable component 470 can be disposed between the anode 430 and the resistor 450 in the direction extending along the first rotation axis Ax1. In the cup-shaped plating module 400 of this embodiment, the rotatable component 470 can be disposed between the anode 430 and the resistor 450 in the vertical direction. The rotatable component 470 is preferably disposed between the anode cover 426 and the resistor 450. Alternatively, as shown in the illustrated example, the rotatable component 470 can be disposed between the diaphragm 420 and the resistor 450.

[0047] Figure 5 This is a schematic diagram showing the rotation of the rotatable part 470. Figure 5 This is a diagram showing only the rotatable component 470 as viewed from a direction perpendicular to the first rotation axis Ax1. Figure 5In the illustration, the rotation of the rotatable component 470 is schematically shown by arrow Ar1. In the illustrated example, seven rotatable components 470 are shown, but the number of rotatable components 470 disposed in the plating module 400 is not particularly limited; it can be more than one and less than six, or more than eight. Each rotatable component 470 has a plate-shaped body 471 and a shaft 472 extending from the body 471. The plate-shaped body 471 increases the change in electric field caused by the rotation of the rotatable component 470. The shaft 472 extends in a direction perpendicular to the first rotation axis Ax1. In the illustrated example, the rotatable components 470 disposed on the leftmost and rightmost sides of the figure have a smaller width perpendicular to the long axis of the shaft 472 and along the plate-shaped body 471 than the other rotatable components 470. However, the dimensions of each rotatable component 470 are not particularly limited and can be appropriately set according to the position where the electric field change is desired during plating.

[0048] The rotatable components 470 are each configured to have a second rotation axis Ax2 and be rotatable about the second rotation axis Ax2. The second rotation axis Ax2 is preferably aligned with the major axis of the shaft 472. The second rotation axis Ax2 extends in a direction intersecting the first rotation axis Ax1. Even if the second rotation axis Ax2 is not perpendicular to the first rotation axis Ax1, the effect of adjusting the electric field can be achieved, but the second rotation axis Ax2 is preferably substantially perpendicular to the first rotation axis Ax1. With this structure, the change in area of ​​the projection onto the surface perpendicular to the direction from the anode 430 toward the substrate Wf during plating can be increased, and the change in electric field caused by the rotation of the rotatable components 470 can be further increased. Therefore, the plating current can be significantly changed, and the uniformity of the thickness of the film formed on the object to be plated can be improved. Hereinafter, the angle between the surface perpendicular to the first rotation axis Ax1 and the direction in which the plate-shaped main body 471 extends is defined as the rotation angle θ.

[0049] Figure 6 This is a schematic diagram of a rotatable component 470 in which a plate-shaped main body 471 is arranged at an inclination relative to the first axis of rotation Ax1 by rotation. Figure 7 This is a schematic diagram showing a plate-shaped main body 471 arranged to extend parallel to the first rotation axis Ax1, and a rotatable component 470. Figure 6 and Figure 7 In the diagram, the electric field is schematically shown with arrow Ar2, a schematic longitudinal section of the inner groove 412 is shown, and the rotatable component 470 is schematically shown as seen from the direction extending from the second rotation axis Ax2.

[0050] exist Figure 6In the example, the plate-shaped body 471 extends in a direction intersecting the direction of the electric field from the anode 430 toward the upper substrate holder 440, thus the electric field lines corresponding to the electric field bypass the plate-shaped body 471. In this case, the density of electric field lines above the rotatable member 470 is smaller compared to the case where the electric field runs straight. In other words, for the current passing through the through-hole 453 above the rotatable member 470, the resistance of the rotatable member 470 is larger. Thus, the weakening of the electric field due to the resistance of the rotatable member 470 is referred to as the shielding of the electric field by the rotatable member 470.

[0051] exist Figure 7 In this example, the direction of the electric field is parallel to the direction in which the plate-shaped main body 471 extends, thus the electric field has less detours, and the rotatable part 470 has a smaller influence on the electric field. Therefore, the local variation in plating current caused by the rotatable part 470 is smaller.

[0052] When the rotatable component 470 is configured such that the plate-shaped body 471 extends perpendicularly to the first rotation axis Ax1, in other words, when the rotation angle θ is 0°, the resistance during plating is at its maximum. As the rotation angle θ of the plate-shaped body 471 increases from 0° to 90°, the resistance during plating caused by the rotatable component 470 decreases. When the rotatable component 470 is configured such that the plate-shaped body 471 extends parallel to the first rotation axis Ax1, in other words, when the rotation angle θ is 90°, the resistance during plating is at its minimum. Thus, the magnitude of the local plating current can be controlled by rotating the rotatable component 470. Furthermore, in the illustrated example, the second rotation axes Ax2 of each rotatable component 470 are parallel to each other, but this is not a particular limitation.

[0053] Figure 8 This is a schematic bottom view showing the rotatable component 470 as viewed from the anode side along the direction extending along the first rotation axis Ax1. In the illustrated example, the rotation angle θ of each rotatable component 470 is 0°, at which point the plate-shaped bodies 471 of the plurality of rotatable components 470 integrally form a plate-shaped shielding component 47. Thus, when the plurality of rotatable components 470 are respectively in a predetermined rotation position, it is preferable that the plurality of rotatable components 470 integrally form a plate-shaped shielding component 47 for shielding the electric field during plating. Therefore, when a plate-shaped shielding component 47 is formed, the effect of shielding the electric field can be improved, or the rotatable components 470 can be easily controlled through an easily understood configuration.

[0054] like Figure 8As shown, the plate-shaped shielding member 47 can be annular. This allows for more reliable suppression of circumferential electric field deviations during the formation of the plate-shaped shielding member 47. Furthermore, the shape of the plate-shaped shielding member 47 is not particularly limited and can be appropriately set according to the location where the electric field change is desired during plating.

[0055] The radial range of the rotatable member 470 relative to the first rotation axis Ax1 can be set to be 50% or more outward from the radial distance from the first rotation axis Ax1 to the farthest end of the resistor 450. Furthermore, this range can be set to be 90% or more inward from the radial distance from the first rotation axis Ax1 to the farthest end of the resistor 450. In one embodiment, the inner diameter of the plate-shaped shielding member 47 is 50% to 70% of the diameter of the resistor 450 or the substrate Wf, preferably 55% to 65%. In another embodiment, the outer diameter of the plate-shaped shielding member 47 is 70% to 90% of the diameter of the resistor 450 or the substrate Wf, preferably 80% to 90%. Therefore, for areas where the uniformity of the plating thickness is easily reduced, the electric field can be effectively adjusted, and the uniformity of the plating thickness formed on the substrate Wf can be further improved.

[0056] The plating module 400 may also include a drive mechanism 480 for rotating at least one rotatable component 470. The drive mechanism 480 may include an actuator such as a motor. The drive mechanism 480 can be controlled by a controller, i.e., a control module 800, which controls the actions of various parts of the plating module 400. Figure 1 The rotation of each rotatable component 470 can be controlled independently by a separate drive mechanism 480. Alternatively, a single drive mechanism 480 can rotate the multiple rotatable components 470 by rotating a belt connecting the shaft 472. The shaft 472 extends outside the plating tank 410, allowing adjustment of the electric field during plating without removing the rotatable components 470 from the plating tank 410.

[0057] Figure 9 This is a schematic diagram showing the through-hole 453 of the rotatable component 470 and the resistor 450 as viewed from the anode side in the direction extending along the first rotation axis Ax1. Figure 9 In the diagram, when viewed from the anode side, the through hole 453 of the resistor 450 located behind the rotatable component 470 overlaps with the rotatable component 470 and is schematically shown with a dashed line.

[0058] At least one rotatable component 470 is configured to be able to rotate between a first position P1 and a second position P2 that overlap with a portion of a plurality of through holes 453 of the resistor 450 when viewed from a direction extending from the first rotation axis Ax1, wherein the second position P2 overlaps less with the plurality of through holes 453 of each rotatable component 470 compared with the first position P1.

[0059] Figure 9 This is an example of a rotatable component 470 in the first position P1. Figure 9 In the middle, the plate-shaped main body 471 of the rotatable component 470 is positioned relative to the plane of the through hole 453 that is perpendicular to the first rotation axis Ax1. Figure 4 The first surface 451 extends approximately parallel to the rotatable component 470, thus the overlap between the rotatable component 470 and the through hole 453 is larger compared to other rotational positions of the rotatable component 470. The area overlapping between the projected rotatable component 470 and the through hole 453 when the rotatable component 470 is projected onto the first surface 451 of the resistor 450 is called the overlap area. At the first position P1, the overlap area is larger compared to other rotational positions.

[0060] Figure 10 This is a schematic bottom view of a rotatable component 470 that is tilted relative to the first rotation axis Ax1. Figure 10 This is an example of a rotatable component 470 located at an intermediate position P10, between the first position P1 and the second position P2. Figure 10 The through hole 453 has been omitted from the illustration to avoid making it difficult to observe. Figure 10 In the example, the plate-shaped body 471 of the rotatable component 470 extends obliquely relative to the first surface 451 of the resistor 450 distributed in the through hole 453, so the overlap between the rotatable component 470 and the through hole 453 is smaller compared to the rotatable component 470 in the first position P1. In other words, at the intermediate position P10, the overlap area is smaller compared to the first position P1.

[0061] Figure 11 This is an example of the rotatable component 470 in the second position P2. Figure 11 In this configuration, the plate-shaped main body 471 of the rotatable component 470 extends approximately perpendicularly to the first surface 451 of the resistor 450 distributed in the through hole 453. Therefore, compared to other rotatable components 470 in other rotational positions, the overlap between the rotatable component 470 and the through hole 453 is smaller. In other words, at the second position P2, the overlap area is smaller compared to other rotational positions such as the first position P1 and the intermediate position P10.

[0062] Thus, the rotatable component 470 is configured to rotate between a first position P1 and a second position P2 that overlap with a portion of the plurality of through holes 453. The second position P2 overlaps less with the plurality of through holes 453 compared to the first position P1, thereby enabling more reliable localized variations in the plating current through the through holes 453 through the rotation of the rotatable component 470. Furthermore, in the example described above, the rotation angle θ of the rotatable component 470 is varied from 0° to 90°, but the range of the rotation angle θ is not limited as long as the plating current can be adjusted with the desired precision.

[0063] like Figure 3 As shown, the plating module 400 includes: a blade 491 disposed between a substrate Wf held by a substrate holder 440 and a resistor 450; and a blade stirring mechanism (not shown) for moving the blade 491 within the plating solution to stir the plating solution. The blade 491 is not limited, but can be, for example, a plate component with a large number of honeycomb-shaped holes. The blade stirring mechanism can be implemented using a known mechanism such as a motor. The blade stirring mechanism is configured to reciprocate the blade 491 along the plating surface Wf-a of the substrate Wf, thereby stirring the plating solution near the plating surface Wf-a of the substrate Wf. However, it is not limited to the above example; as an example, the blade stirring mechanism may also be configured to reciprocate the blade 491 perpendicular to the plating surface Wf-a. Furthermore, in this embodiment, an example with a blade 491 and a blade stirring mechanism is shown, but the blade 491 and blade stirring mechanism may not be provided.

[0064] A shield 492 is provided in the cathode region 422 to shield the current flowing from the anode 430 to the substrate Wf. In this embodiment, the shield 492 is provided at the same height as the blade 491, but is not limited to the example described above. The shield 492 is, for example, a generally plate-shaped component made of a dielectric material. The shield 492 is configured to be movable to a shielding position between the plated surface Wf-a of the substrate Wf and the anode 430, and to a retracted position away from the plated surface Wf-a and the anode 430. In other words, the shield 492 is configured to be movable to a shielding position below the plated surface Wf-a and a retracted position away from the plated surface Wf-a. The position of the shield 492 is controlled by a shield drive mechanism (not shown) that receives instructions from the control module 800. The shield drive mechanism can be implemented by a known mechanism such as a motor or a solenoid.

[0065] Additionally, a sensor 460 is provided in the cathode region 422 to detect parameters related to the coating on the substrate Wf-a. In this embodiment, the sensor 460 is a film thickness sensor for measuring the thickness of the coating, and the parameters related to the coating refer to physical quantities used to infer the film thickness or the formation rate of the coating. The sensor 460 is configured to face the coating surface Wf-a. In this embodiment, the sensor 460 is configured to be movable in a way that changes the detection position radially relative to the first rotation axis Ax1. However, it is not limited to the above example, and multiple sensors 460 facing the coating surface Wf-a may be provided. In addition, in one embodiment, the detection end of the sensor 460 is disposed inside the resistor 450. However, it is not limited to the above example, and the sensor 460 may be disposed at other locations outside the resistor 450, for example.

[0066] The detection signal from sensor 460 is input to control module 800. Figure 1 In this embodiment, a potential sensor having a detection electrode (not shown) is used as sensor 460. Furthermore, the detection electrode of sensor 460 can be configured to face the plating surface Wf-a, or it can be disposed within a conduit configured to face the plating surface Wf-a and filled with plating solution. Additionally, when using a potential sensor as sensor 460, at least one reference potential sensor (not shown) can be provided within the plating tank 410. The reference potential sensor can be disposed outside the region between the substrate Wf and the anode 430. In other words, viewed from a direction perpendicular to the plating surface Wf-a of the substrate Wf, the reference potential sensor can be positioned in a location that does not overlap with the substrate Wf and the anode 430. The control module 800 can infer the formation rate of the plating film formed on the plating surface Wf-a and determine the thickness of the plating film based on the potential difference between sensor 460 (the potential sensor) and the reference potential sensor. This is based on the correlation between the plating current and potential during the plating process. However, the sensor 460 can be any sensor capable of detecting parameters related to the coating. It can replace a potential sensor or, based on that, employ other sensors such as a white confocal optical distance sensor, a magnetic field sensor, or an eddy current sensor. Furthermore, this embodiment shows an example with a sensor 460 for detecting parameters related to the coating, but the sensor 460 may not be provided.

[0067] The control module 800 can control the rotation of the rotatable component 470 based on the coating thickness obtained using the sensor 460. This allows for adjusting the resistance while simultaneously checking the uniformity of the formed coating thickness, resulting in a more uniform coating.

[0068] Furthermore, the control module 800 can also control the rotation of the rotatable component 470 based on the size of the anode opening 427. For example, when the anode opening 427 is narrow, the area where the plating tends to thicken is offset radially inward relative to the first rotation axis Ax1. Therefore, the control module 800 can control the rotatable component 470 with its plate-like body 471 nearly perpendicular to the first rotation axis Ax1 (with a rotation angle θ close to 0°). From the same viewpoint, when the anode opening 427 is wider, the control module 800 can control the rotatable component 470 with its plate-like body 471 nearly parallel to the first rotation axis Ax1 (with a rotation angle θ close to 90°). In addition, the control module 800 can also control the rotation of the rotatable component 470 based on various plating conditions, such as the rotation speed of the substrate holder 440 or the measured or set value of the current used for plating.

[0069] In this way, the control module 800 can control the rotation of at least one rotatable component 470 based on at least one of the thickness of the plating formed on the substrate Wf during plating, the plating current, the rotation speed of the substrate holder 440, and the size of the anode opening 427. This allows for more precise adjustment of the plating current according to various conditions.

[0070] Here, the plating process of the plating module 400 in this embodiment will be described in more detail. The substrate Wf is immersed in the plating solution in the cathode region 422 using a lifting mechanism 442, thereby exposing the substrate Wf to the plating solution. In this state, the plating module 400 applies a voltage between the anode 430 and the substrate Wf, thereby enabling plating treatment on the plating surface Wf-a of the substrate Wf. In one embodiment, the plating process is performed while rotating the substrate holder 440 using a rotation mechanism 448. Through the plating process, a conductive film (plating) is deposited on the plating surface Wf-a of the substrate Wf.

[0071] In this embodiment, the control module (controller) 800 controls the drive mechanism 480. Figure 8 The rotation of the rotatable component 470 is adjusted using the drive mechanism 480, thereby improving the uniformity of the overall coating thickness distribution on the substrate Wf. As an example, the adjustment of the rotatable component 470 using the drive mechanism 480 is performed before the coating process begins. Alternatively, as an example, the adjustment of the rotatable component 470 using the drive mechanism 480 is performed in real-time during the coating process based on the detection value of the sensor 460.

[0072] Figure 12 This is a flowchart illustrating an example of a method for setting the operation scheme of the rotatable component 470, the anode cover 426, and the shield 492 based on the control module 800. As an example, Figure 12The method shown is performed when processing a new batch of substrates. Furthermore, the control module 800 can also set only a portion of the operation schemes for the rotatable component 470, the anode cover 426, and the shield 492. Here, the operation scheme for the rotatable component 470 can be a scheme indicating the rotation angle θ of the rotatable component 470. Additionally, the operation scheme for the anode cover 426 indicates the opening size of the anode cover 426. Furthermore, the operation scheme for the shield 492 indicates the forward and backward position of the shield 492. Alternatively, the operation scheme can be set by a computer external to the plating apparatus 1000 and sent to the plating apparatus 1000, instead of being set by the control module 800 of the plating apparatus 1000.

[0073] exist Figure 12 In the example shown, firstly, the control module 800 acquires the resist pattern of the substrate Wf, which is the object of processing (step S110). The resist pattern refers to the pattern of the resist layer formed on the plating surface Wf-a in order to form the desired plating pattern through the plating process. The resist pattern can also be acquired by detecting the substrate Wf using a sensor provided in the plating apparatus 1000. As an example, the plating apparatus 1000 may also be a device equipped with an imaging sensor (not shown) such as a camera that captures images of the plating surface Wf-a of the substrate Wf. Furthermore, the control module 800 can also acquire the imaging data detected by the imaging sensor and acquire the resist pattern of the plating surface Wf-a by analyzing the imaging data. Acquiring the resist pattern based on the imaging data can be done using known methods based on shadows or feature points in the imaging data. Alternatively, as an example, the control module 800 can also acquire the resist pattern via external input through wired or wireless communication.

[0074] Furthermore, the control module 800 sets the operation schemes for the rotatable component 470, the anode cover 426, and the shield 492 based on the acquired resist pattern (step S120). As a specific example, the control module 800 calculates the plating growth coefficient for each defined area of ​​the plated surface Wf-a of the substrate Wf based on the acquired resist pattern, and sets the operation scheme for each controlled object based on the calculated plating growth coefficient. Here, the plating growth coefficient is a parameter representing the growth rate (formation rate) of the plating film when the rotatable component 470, the anode cover 426, and the shield 492 are in the state where they are least shielded from current. As an example, the plating growth coefficient can be set as the amount of plating film formed per unit time (e.g., 1 second) (e.g., nanometers). As a specific example, the control module 800 can calculate the aperture ratio of the resist layer in each defined area based on the resist pattern, and calculate the plating growth coefficient based on the calculated aperture ratio. This is based on the fact that in areas with a large aperture ratio of the resist layer, the area of ​​the coating deposit and the amount of coating required to form a certain amount of film are large, and the growth rate of the film tends to be smaller compared with areas with a small aperture ratio of the resist layer.

[0075] Figure 13 This is a schematic diagram illustrating the resist pattern formed on the plated surface Wf-a of a substrate Wf in one embodiment. Figure 13 In this embodiment, resist openings are formed only in the shaded cross-shaped region A1, while region A2 outside the cross-shaped region A1 is a non-opening region without resist openings. When plating is performed on a substrate Wf with such a resist pattern, no plating current flows through region A2, which is a non-opening region, and only region A1, which is an opening region. Furthermore, in this embodiment, the plating process is performed while rotating the substrate holder 440 using the rotation mechanism 448. In the cross-shaped protrusion region of region A1, which includes region A2 in the circumferential direction, the plating current is concentrated and the plating thickness increases. In this specification, the region where resist openings are formed in almost all areas when viewed circumferentially is called the "central region B1" (in Figure 13 In the example shown, the inner circular area is enclosed by the dotted line C1. Furthermore, when viewed circumferentially, the area containing both the region with resist openings (opening region A1) and the region without resist openings (non-opening region A2), where the area of ​​opening region A1 is larger than the area of ​​non-opening region A2 circumferentially, is called the "intermediate region B2" (in...). Figure 13 In the example shown, the annular region is enclosed by the dotted lines C1 and C2. Furthermore, when viewed circumferentially, the region containing both the open region A1 and the non-open region A2, where the area of ​​the open region A1 is smaller than the area of ​​the non-open region A2 circumferentially, is called the "outer peripheral region B3" (in...). Figure 13In the example shown, the area is a ring shape surrounded by dotted lines C2 and C3. Furthermore, in Figure 13 In the example shown, the resist regions are arranged in the order of central region B1, intermediate region B2, and outer peripheral region B3 from the center of the plated surface Wf-a toward the outer periphery, with no resist openings formed on the outer peripheral side of the outer peripheral region B3. However, this is not limited to the above example, and any resist pattern can be formed on the substrate Wf.

[0076] Here, the anode cover 426 or shield 492 provided by the plating module 400 can appropriately adjust the formation rate of the coating near the outer periphery of the surface to be plated, Wf-a. However, in the case of Figure 13 When a substrate Wf as shown is subjected to a plating process, the plating formation rate in the inner peripheral area (especially the middle area B2) is relatively higher than that near the outer periphery, which may impair the uniformity of the coating thickness.

[0077] In this embodiment, the plating module 400 has a rotatable member 470 configured as a ring-shaped shielding member 47, and the electric field can be adjusted primarily in the region where the shielding member 47 is disposed. This allows adjustment of the current flowing in the intermediate region B2, thereby adjusting the plating formation speed of the intermediate region B2. As an example, in... Figure 13 In the substrate Wf, when the deposition rate of the intermediate region B2 surrounded by dotted lines C1 and C2 is relatively high, the deposition thickness formed in this intermediate region B2 can be reduced by making the rotation angle θ of the rotatable member 470 close to 0°. Therefore, as an example, in the case of… Figure 13 When a substrate Wf as shown is subjected to a plating process, the uniformity of the plating thickness can be improved. Furthermore, the plating module 400 of this embodiment includes an anode cover 426 and a shield 492. Therefore, for the central region B2, the plating speed can be adjusted by rotating the rotatable member 470, and for the outer peripheral region B3, the plating speed can be adjusted using the anode cover 426 and the shield 492. Thus, by controlling the resistor 450, the anode cover 426, and the shield 492, the plating speed can be adjusted for each region of the substrate Wf, thereby improving the uniformity of the plating thickness. Furthermore, the size of the rotatable member 470 can be determined based on the central region B2, for example, making the shield 47 approximately the same size as the central region B2.

[0078] Figure 14 This is a flowchart illustrating an example of a method for setting the operation schemes of the rotatable component 470, the anode cover 426, and the shield 492 during a plating process based on the control module 800. The plating process is performed... Figure 14 The method shown is used instead of Figure 12 The method or modification shown is to Figure 12 The method shown defines the action plan. Alternatively, the control module 800 can also define the action plan for only a portion of the rotatable component 470, the anode cover 426, and the shield 492.

[0079] When the plating process begins (step S210), the control module 800 acquires plating-related parameters from the sensor 460 in real time (step S220). In this embodiment, the plating-related parameters are detected by the sensor 460 as the substrate Wf rotates. In one embodiment, the plating-related parameters are detected at multiple locations radially on the plating surface Wf-a. The control module 800 calculates the film thickness distribution on the plating surface Wf-a based on the detection values ​​from the sensor 460 (step S230). Next, the control module 800 sets the operation schemes for the rotatable component 470, the anode cover 426, and the shield 492 based on the calculated film thickness distribution (step S240). The control module 800 repeats steps S220 to S240 to set the operation schemes for the controlled objects until the plating process is completed (step S250). Then, the control module 800 controls the rotatable component 470, the anode cover 426, and the shield 492 based on the set operation schemes. In this way, based on the coating-related parameters obtained from the sensor 460, the action scheme of the rotatable component 470 and the like can be set or modified during the coating process, thereby further improving the uniformity of the coating thickness.

[0080] <Variation Example 1>

[0081] In the above embodiment, the plate-shaped shielding component 47 is annular, but it can also be a circular plate.

[0082] Figure 15 This is a schematic bottom view showing the rotatable component 470A of this modified example as viewed from the anode side. The rotatable component 470A differs from the rotatable component 470 of the above embodiment in that it has a plate-shaped body 471A instead of a plate-shaped body 471. In the illustrated example, multiple rotatable components 470A are integrally formed into a circular plate-shaped shielding component 47A when their respective plate-shaped bodies 471A are parallel. Thus, when the multiple rotatable components 470A are respectively located in predetermined rotational positions, the multiple rotatable components 470A can also integrally form a circular plate-shaped shielding component 47A. Therefore, the plating current can be locally adjusted in the region surrounding the first rotation axis Ax1.

[0083] <Variation Example 2>

[0084] In the above embodiment, the plating module 400 is configured as a cup-type plating apparatus, but it can also be configured as an immersion-type plating apparatus. In this case, the substrate Wf, resistor 450, rotatable member 470, and anode 430 can be arranged in the vertical direction. In this modified example, the same effect as in the above embodiment can also be achieved.

[0085] The present invention can also be described in the following forms.

[0086] [Form 1] According to Form 1, a plating apparatus is provided, comprising: a plating tank; a substrate holder configured to hold a substrate and rotatable about a first rotation axis during plating; an anode disposed in the plating tank opposite to the substrate held by the substrate holder; a resistor disposed between the anode and the substrate holder for adjusting an electric field, having a plurality of through holes communicating with the anode side and the substrate holder side of the resistor; and at least one rotatable member disposed between the anode and the resistor for adjusting the electric field, wherein each of the at least one rotatable member is configured to rotate about a second rotation axis extending in a direction intersecting the first rotation axis, and wherein each of the at least one rotatable member is configured to rotate between a first position and a second position when viewed from the direction extending from the first rotation axis, wherein the first position is a position overlapping a portion of the plurality of through holes of the resistor, and the second position has less overlap between each of the rotatable members and the plurality of through holes compared to the first position. According to Form 1, the uniformity of the thickness of the coating formed on the object to be plated can be improved.

[0087] [Modifier 2] According to Modifier 2, based on Modifier 1, the second rotation axis is approximately perpendicular to the first rotation axis. According to Modifier 2, the change in electric field caused by the rotation of the rotatable component can be increased, and the uniformity of the thickness of the coating formed on the object to be coated can be further improved.

[0088] [Modifier 3] According to Modifier 3, based on Modifier 1 or 2, the at least one rotatable component respectively includes a plate-shaped main body and a shaft extending from the main body. According to Modifier 3, the plate-shaped main body can increase the change in electric field caused by rotation and further improve the uniformity of the thickness of the coating formed on the object to be coated.

[0089] [Version 4] According to Version 4, based on Versions 1 to 3, the plating apparatus includes a plurality of the aforementioned rotatable components. When the plurality of rotatable components are each in a predetermined rotational position, the plurality of rotatable components integrally constitute a plate-shaped shielding component that shields the electric field during plating. According to Version 4, when a plate-shaped shielding component is formed, the effect of shielding the electric field can be improved, or the rotatable components can be easily controlled through an easily understood configuration of the rotatable components.

[0090] [Form 5] According to Form 5, based on Form 4, the aforementioned plate-shaped shielding member is in the form of a circular plate or a ring. The formation speed of the plating sometimes depends on the distance from the center of the object, therefore, according to Form 5, in this case, it is possible to particularly improve the uniformity of the thickness of the formed plating.

[0091] [Form 6] According to Form 6, based on Forms 1 to 5, the plating apparatus further includes: a sensor for measuring the thickness of the plating formed on the substrate; a drive mechanism for rotating the at least one rotatable member; a controller for controlling the drive mechanism; and an anode cover disposed between the at least one rotatable member and the anode, configured to have an anode opening penetrating the anode side and the substrate holder side of the anode cover, and capable of adjusting the size of the anode opening. The controller controls the rotation of the at least one rotatable member based on at least one of the thickness of the plating formed on the substrate during plating, the plating current, the rotation speed of the substrate holder, and the size of the anode opening. According to Form 6, the plating current can be adjusted more precisely according to various conditions.

[0092] [Modifier 7] According to Modifier 7, based on Modifiers 1 to 6, the substrate holding structure is configured to hold the substrate in the plating tank with the plating surface facing downwards. According to Modifier 7, plating can be performed by utilizing the advantages of a cup-type plating apparatus.

[0093] The embodiments of the present invention have been described above. However, the above embodiments are for the purpose of easy understanding of the present invention and are not intended to limit the present invention. The present invention can be modified and improved without departing from its spirit, and equivalent structures are naturally included in the present invention. Furthermore, within the scope of solving at least a portion of the above-mentioned problems or achieving at least a portion of the effects, any combination of embodiments and modifications is possible, and any combination or omission of the constituent elements described in the claims and specification is possible.

[0094] Explanation of reference numerals in the attached figures

[0095] 47, 47A...Shielding component; 400...Plating module; 410...Plating tank; 420...Diaphragm; 422...Cathode region; 424...Anode region; 426...Anode cover; 427...Anode opening; 430...Anode; 440...Substrate holder; 442...Lifting mechanism; 448...Rotating mechanism; 450...Resistor; 453...Through hole; 460...Sensor; 470, 470A...Rotable component; 471, 471A...Main body of rotatable component; 472...Shaft; 480...Drive mechanism; 492...Shielding body; 800...Control module; 1000...Plating device; Ax1...First rotating axis; Ax2...Second rotating axis; P1...First position; P2...Second position; Wf...Substrate; Wf-a...Plating surface.

Claims

1. A plating apparatus, characterized in that, have: Plating tank; A substrate holder is configured to hold the substrate and is rotatable about a first rotation axis during plating. An anode is disposed in the plating bath in a manner opposite to the substrate held by the substrate holder; The resistor is a resistor disposed between the anode and the substrate holder for adjusting the electric field, and has a plurality of through holes communicating with the anode side and the substrate holder side of the resistor; as well as Multiple rotatable components are disposed between the anode and the resistive element for electric field adjustment. The plurality of rotatable components are each configured to rotate about a second rotation axis extending in a direction intersecting the first rotation axis. The plurality of rotatable components are each configured to rotate between a first position and a second position when viewed from the direction extending from the first rotation axis. The first position overlaps with a portion of the plurality of through holes of the resistive element. The second position has less overlap between each rotatable component and the plurality of through holes compared to the first position. When the plurality of rotatable components are respectively in a predetermined rotational position, the plurality of rotatable components integrally form a plate-shaped shielding component for the electric field during shielding plating. The plate-shaped shielding component is annular.

2. The plating apparatus according to claim 1, characterized in that, The second axis of rotation is approximately perpendicular to the first axis of rotation.

3. The plating apparatus according to claim 1, characterized in that, The plurality of rotatable components each have a plate-shaped body and an axis extending from the body.

4. The plating apparatus according to any one of claims 1 to 3, characterized in that, The inner diameter of the plate-shaped shielding component is 50% to 70% of the diameter of the resistor or the diameter of the substrate.

5. The plating apparatus according to any one of claims 1 to 3, characterized in that, The outer diameter of the plate-shaped shielding component is 70% to 90% of the diameter of the resistor or the diameter of the substrate.

6. The plating apparatus according to any one of claims 1 to 3, characterized in that, It also has: A sensor for measuring the thickness of a plating formed on the substrate; A drive mechanism that causes the plurality of rotatable components to rotate; The controller controls the drive mechanism; as well as An anode cover is an anode cover disposed between the plurality of rotatable components and the anode, configured to have an anode opening penetrating the anode side and the substrate holder side of the anode cover, and the size of the anode opening can be adjusted. The controller controls the rotation of the plurality of rotatable components based on at least one of the following: the thickness of the plating formed on the substrate during plating, the current used for plating, the rotation speed of the substrate holder, and the size of the anode opening.

7. The plating apparatus according to any one of claims 1 to 3, characterized in that, The substrate holding structure is configured to hold the substrate within the plating tank with the plating surface facing downwards.

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