Thin film sensor manufacturing and configuration modification method based on femtosecond laser cutting

Abstract

A thin film sensor manufacturing and configuration modification method based on femtosecond laser cutting belongs to the field of thin film sensors, and comprises the following steps: manufacturing different sensor material thin films on a substrate through an ink-jet printing technology, and performing femtosecond laser cutting on the deposited different sensor material thin films based on the functional configuration requirements of the thin film sensor to obtain the thin film sensor. And manufacturing the required film sensing device. According to the invention, the problems that the processing degree of freedom is limited and the process rigidity characteristic is obvious due to the fact that an existing manufacturing method of the thin film sensor depends on a physical vapor deposition (PVD) technology and mask dependence exists are solved, the thin film sensor with high precision and high measuring point density can be manufactured, and the method has the characteristics of low cost and high efficiency; meanwhile, in-situ and dynamic configuration modification of the thin film sensor can be realized, and the problems that a traditional thin film sensor cannot be modified once being formed and data missing is easily caused by measurement point curing in an unknown or dynamic physical field are solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of thin film sensors, and in particular relates to a method for manufacturing a thin film sensor based on femtosecond laser cutting and a method for modifying its configuration. Background Art

[0002] Thin-film sensors have been widely used in aerospace sensing, nuclear energy monitoring and other fields in recent years due to their advantages such as low physical field interference, high measurement accuracy and non-destructive monitoring. In extreme environments, such as high temperature, high radiation or complex airflow, their high stability and high reliability have made them gradually become the core tool for multi-dimensional environmental parameter monitoring. Through the optimized selection and layout design of the measuring point location, thin-film sensors can accurately perceive the physical fields of complex environments (such as stress concentration areas, thermal gradient mutation areas and other key sites), which not only improves the safety of the equipment, but also provides key data support for the development of high-end materials and advanced equipment. Therefore, the improvement of thin-film sensor performance, especially the comprehensive sensing accuracy, combined with the measurement point planning and working condition adaptability research, has become an important direction of current research.

[0003] Currently, the manufacturing of thin-film sensors primarily relies on physical vapor deposition (PVD) technology, but its process limitations are becoming increasingly prominent. PVD requires patterning the sensor elements using a prefabricated mask. This process leads to two core issues: First, mask dependence limits processing freedom. Due to mask accuracy and repeatability errors, line resolution typically remains below 50μm, making it difficult to achieve high-density measurement point layouts with micron-level spacing or precise integration of heterogeneous materials (such as thermoelectric-piezoresistive composite elements). Second, the process is characterized by significant rigidity. Once a thin-film sensor is deposited, its structure is irreversible, making it impossible to dynamically adjust measurement point locations or expand functionality based on actual operating conditions. In unknown or dynamically changing physical fields (such as the unsteady flow fields of aircraft engines and the transient thermal stress fields of nuclear reactors), this "one-off" design can easily lead to missed critical data, such as uncovered stress concentration points or insufficient sampling of thermal gradient abrupt changes. Furthermore, the long lead times and high costs of mask customization further hinder the development of small-batch, customized thin-film sensors, such as biomimetic curved surface sensor networks or the large-scale production of flexible multi-parameter integrated devices. These shortcomings make traditional PVD technology difficult to meet the advanced sensing requirements of high-density, reconfigurable, and multifunctional integration, and are difficult to adapt to the manufacturing needs of the next generation of thin-film sensors, which place higher demands on measurement point density and location. Therefore, it is urgent to develop a new thin-film sensor processing strategy that can manufacture high-resolution thin-film sensors and allow for real-time and highly flexible modification of thin-film sensor configurations. Summary of the Invention

[0004] In order to solve the technical problem that the existing thin film sensor manufacturing method heavily relies on physical vapor deposition (PVD) technology, the present invention provides a thin film sensor manufacturing method based on femtosecond laser cutting and a configuration modification method thereof.

[0005] The technical solutions adopted by the present invention to solve the technical problems are as follows:

[0006] The present invention provides a method for manufacturing a thin film sensor based on femtosecond laser cutting, comprising the following steps: manufacturing thin films of different sensor materials on a substrate by inkjet printing technology; and performing femtosecond laser cutting on the deposited thin films of different sensor materials based on the requirements of the functional configuration of the thin film sensor to manufacture the required thin film sensor device.

[0007] Furthermore, when manufacturing thin films of different sensor materials, the substrate is first pretreated and then heated to a certain temperature; then, the sensor material nanoparticle ink is loaded into an inkjet printing device, an appropriate waveform is set, and highly stable sensor material ink droplets are obtained on the substrate by inkjet printing; finally, the printing parameters and pattern are set, and a highly stable sensor material film is obtained on the substrate by inkjet printing.

[0008] Furthermore, the preparation method of the sensor material nanoparticle ink is as follows: dispersing the sensor material in an organic solvent to prepare a sensor material ink with a certain mass fraction; after dispersing the sensor material ink using ultrasonic technology for a certain time, the sensor material ink is kept in a water bath for temperature control; and finally, after filtering, the sensor material nanoparticle ink for inkjet printing is obtained.

[0009] Furthermore, when performing femtosecond laser cutting, first adjust the spot diameter of the continuous wave femtosecond laser, and then adjust the laser power, laser scanning speed and laser scanning line spacing in sequence; draw the laser cutting path pattern according to the functional configuration of the thin film sensor, calibrate the relative position of the beam and the substrate, and then turn on the femtosecond laser for ablation cutting.

[0010] Furthermore, the pulse width of the femtosecond laser is 200-300fs, and the wavelength is 1064nm; the spot diameter of the femtosecond laser is 0.08mm±0.004mm; the laser power is 12-15W; the laser scanning speed is 1000-2000mm / s; and the laser scanning line spacing is 0.08-0.10mm.

[0011] Furthermore, the present invention provides a method for manufacturing a thin film sensor based on femtosecond laser cutting, which also includes the steps of calibrating and testing the thin film sensor device.

[0012] The present invention provides a method for modifying the configuration of a thin film sensor based on femtosecond laser cutting, comprising the following steps: first adjusting the spot diameter of a continuous-wave femtosecond laser, and then sequentially adjusting the laser power, laser scanning speed, and laser scanning line spacing; drawing a laser cutting path pattern according to the functional configuration modification strategy of the thin film sensor, calibrating the relative position of the light beam and the substrate, and then turning on the femtosecond laser for ablation cutting.

[0013] Furthermore, the femtosecond laser has a pulse width of 200-300 fs and a wavelength of 1064 nm.

[0014] Furthermore, the spot diameter of the femtosecond laser is 0.08 mm ± 0.004 mm.

[0015] Furthermore, the laser power is 12-15W.

[0016] Furthermore, the laser scanning speed is 1000-2000 mm / s.

[0017] Furthermore, the laser scanning line spacing is 0.08-0.10 mm.

[0018] The beneficial effects of the present invention are:

[0019] 1. Manufacturing of high-precision, high-measurement-point-density thin-film sensors;

[0020] This invention utilizes a femtosecond laser cutting process for functional thin films with extremely low thermal response, enabling the fabrication of functional circuits with line widths as small as 10μm. This represents an order of magnitude improvement over PDV or direct-write technologies, significantly increasing both the test accuracy of thin-film sensors (thin-film strain sensors) and the measurement point density (thin-film thermocouples and heat flow meters). The method of this invention enables the fabrication of thin-film thermocouples with a measurement point density of up to 17 per mm.

[0021] 2. Low cost and high efficiency process;

[0022] Different from the mask process required by existing PVD, the present invention can highly control the material utilization rate through the dual selective process of inkjet printing + laser subtraction, and has the advantage of digitalization, which can be applied to the manufacture of complex sensor devices with multiple requirements.

[0023] 3. In-situ and dynamic configuration modification of thin film sensors;

[0024] Traditional thin-film sensors cannot be modified once formed, and are prone to data loss due to solidification of measurement points in unknown or dynamic physical fields (such as turbulent flow and radiation fields). This invention leverages the selective, high-resolution processing characteristics of femtosecond lasers to modify the measurement point layout in situ on deployed sensors, and even dynamically modify the configuration of operating equipment (such as high-temperature pipelines). This represents a new generation of thin-film sensor manufacturing strategy for high-precision experimental measurement in unsteady, unknowable physical fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic diagram of the principle of a thin film sensor manufacturing method based on femtosecond laser cutting provided by the present invention.

[0026] Figure 2 This is a physical picture and calibration results of a thin film sensor manufactured using a thin film sensor manufacturing method based on femtosecond laser cutting provided by the present invention. DETAILED DESCRIPTION

[0027] The present invention is further described in detail below with reference to the accompanying drawings.

[0028] In a first aspect, the present invention provides a method for manufacturing a thin film sensor based on femtosecond laser cutting.

[0029] The invention discloses a method for manufacturing a thin film sensor based on femtosecond laser cutting, which mainly includes three steps: inkjet deposition of thin film material, femtosecond laser cutting processing and sensor calibration testing.

[0030] In the present invention, the inkjet deposition step of the thin film material can be specifically implemented using existing technology, by depositing the thin film sensor material on the substrate for femtosecond laser cutting processing:

[0031] (1) Rinse the substrate (e.g., alumina substrate) with isopropyl alcohol, ethylene glycol, and ultrapure water in sequence for at least 5 seconds. After rinsing, use a hot air gun to dry the substrate.

[0032] (2) ITO nanoparticles are dispersed in an organic solvent (the organic solvent is a mixed solution of ethylene glycol and isopropyl alcohol, with a mass ratio of 0.8-1) to prepare an ITO ink with a mass fraction of 8-10%.

[0033] (3) In2O3 nanoparticles are dispersed in an organic solvent (the organic solvent is a mixed solution of ethylene glycol and isopropyl alcohol, and the mass ratio of the two is 0.8-1) to prepare an In2O3 ink with a mass fraction of 8-10%.

[0034] (4) Using an ultrasonic crusher, ultrasonically disperse the ITO ink and In2O3 ink at a power of 120-200 W for 2-4 hours, and control the dispersion temperature of the ITO ink and In2O3 ink to be 10-15°C by water bath control.

[0035] (5) The ink was filtered using a PTFE filter membrane (0.45 μm) to obtain ITO nanoparticle ink and In2O3 nanoparticle ink, which can be used for inkjet printing.

[0036] (6) The ITO nanoparticle ink is loaded into an inkjet printing device, and an appropriate waveform is set to obtain highly stable ITO ink droplets by inkjet printing. The appropriate waveform is preferably: a positive pressure of 65-75 V, a negative pressure of 70-80 V, a reference voltage of 0-3 V, a positive pressure rise time of 5-6 ms, a positive pressure duration of 30-35 ms, a positive pressure fall time of 10-15 ms, a negative pressure duration of 40-42 ms, and a negative pressure rise time of 5-6 ms.

[0037] (7) Use a temperature-controlled heating stage to heat and maintain the substrate temperature at 140-160°C.

[0038] (8) Setting the printing parameters and printing pattern through the host computer software, and starting inkjet printing to obtain the ITO film. The printing parameters are preferably: the horizontal printing dot spacing is 0.034-0.036 mm, the vertical printing dot spacing is 0.04-0.045 mm, and the printing rate is 15-17 mm / s; the ITO deposition pattern is preferably a rectangle with a length × width = 3 mm × 40 mm.

[0039] (9) In2O3 nanoparticle ink is loaded into an inkjet printing device, and an appropriate waveform is set to obtain highly stable In2O3 ink droplets through inkjet printing. The appropriate waveform is preferably: positive pressure of 65-75V, negative pressure of 70-80V, reference voltage of 0-3V, positive pressure rise time of 5-6ms, positive pressure duration of 30-35ms, positive pressure fall time of 10-15ms, negative pressure duration of 40-42ms, and negative pressure rise time of 5-6ms.

[0040] (10) Printing parameters and a printing pattern are set by the host computer software, and inkjet printing is started to obtain an In2O3 thin film, and the obtained In2O3 thin film is in contact with the ITO thin film. The printing parameters are preferably: a horizontal printing dot pitch of 0.034-0.036 mm, a vertical printing dot pitch of 0.04-0.045 mm, and a printing rate of 15-17 mm / s; the In2O3 deposition pattern is preferably a rectangle with a length × width = 3 mm × 40 mm.

[0041] (11) Place the substrate with the printed ITO film and In2O3 film in a tube furnace, heat it from room temperature to 1000-1200℃ at a heating rate of 13-17℃ / min in an atmospheric environment, and keep it at 1200℃ for 30-60min. Then close the tube furnace and cool it naturally to room temperature to complete the sintering of the ITO circuit and In2O3 circuit.

[0042] The femtosecond laser cutting process is the innovation of the present invention. The key point is to produce the functional configuration of the thin film sensor by femtosecond laser cutting, which is achieved by selective laser cutting:

[0043] (1) The substrate with the ITO film and In2O3 film after thermal sintering is placed on a femtosecond laser processing platform and precisely positioned.

[0044] (2) First, adjust the spot diameter of the continuous wave femtosecond laser (pulse width 200-300fs, wavelength 1064nm) to 0.08mm±0.004mm.

[0045] (3) Then adjust the laser power to 12-15 W. It should be noted that since the ablation power of ITO film and In2O3 film is similar, the same power can be used for cutting. If other thin film materials need to be cut, an orthogonal experiment of laser power parameters can be performed to determine the appropriate laser cutting power.

[0046] (4) Adjust the laser scanning speed to 1000-2000 mm / s.

[0047] (5) Adjust the laser scanning line spacing to 0.08-0.10mm.

[0048] (6) Draw the laser cutting path pattern according to the functional configuration of the thin film sensor.

[0049] (7) After calibrating the relative position of the beam and the substrate, the femtosecond laser is turned on for ablation and cutting, thereby obtaining an ITO-In2O3 thin film thermocouple, i.e., an ITO-In2O3 thin film sensor.

[0050] In the present invention, the sensor calibration test step can be specifically implemented by using existing technologies, and the manufactured thin film sensor can be calibrated and tested through the sensor calibration test.

[0051] (1) At the output end of the ITO-In2O3 thin film thermocouple, silver electrodes are made with silver paste, and the signal is led out through a wire to ensure that the wire connection is firm and the electrical contact is good.

[0052] (2) Then connect the potential output wire of the ITO-In2O3 thin film thermocouple to the existing data acquisition system, and set the acquisition frequency to 1-3 Hz to collect the potential output.

[0053] (3) Clamp the output end of the ITO-In2O3 thin film thermocouple with a water cooling block, set the water cooling temperature to 5-15°C, and stick a K-type thermocouple on the output end, while recording the cold end temperature output.

[0054] (4) Place the junction end of the ITO-In2O3 thin film thermocouple on a temperature-controllable heating table and set the heating temperature to 100℃, 200℃, 300℃, and 400℃ respectively. Maintain each temperature for 60-90s in turn. Paste a K-type thermocouple at the junction end and record the hot end temperature output at the same time.

[0055] (5) Record the output potential value, cold end temperature value and hot end temperature value of the ITO-In2O3 thin film thermocouple.

[0056] Theoretically, the method for manufacturing a thin film sensor based on femtosecond laser cutting of the present invention can be applied to the manufacture of various thin film sensors using metals and semiconductors as raw materials.

[0057] In a second aspect, the present invention provides a method for modifying the configuration of a thin film sensor based on femtosecond laser cutting.

[0058] A method for modifying the configuration of a thin film sensor based on femtosecond laser cutting of the present invention mainly includes two steps: femtosecond laser cutting configuration modification and sensor calibration test.

[0059] The femtosecond laser cutting configuration modification step is the innovation of the present invention. The focus is on modifying the functional configuration of the thin film sensor through femtosecond laser cutting, specifically using selective laser cutting to achieve:

[0060] (1) Place the sintered substrate with the ITO-In2O3 thin film thermocouple on a femtosecond laser processing platform and precisely position it.

[0061] The ITO-In2O3 thin film thermocouple can be manufactured according to the thin film sensor manufacturing method based on femtosecond laser cutting provided in the first aspect of the present invention, or can be manufactured according to other existing manufacturing technologies.

[0062] (2) First, adjust the spot diameter of the continuous wave femtosecond laser (pulse width 200-300fs, wavelength 1064nm) to 0.08mm±0.004mm.

[0063] (3) Then adjust the laser power to 12-15 W. It should be noted that since the ablation power of ITO film and In2O3 film is similar, the same power can be used for cutting. If other thin film materials need to be cut, an orthogonal experiment of laser power parameters can be performed to determine the appropriate laser cutting power.

[0064] (4) Adjust the laser scanning speed to 1000-2000 mm / s.

[0065] (5) Adjust the laser scanning line spacing to 0.08-0.10mm.

[0066] (6) Draw the laser cutting path pattern based on the functional configuration modification strategy of ITO-In2O3 thin film sensor.

[0067] (7) After calibrating the relative position of the beam and the substrate, the femtosecond laser is turned on for ablation and cutting, thereby modifying the functional configuration of the ITO-In2O3 thin film sensor.

[0068] In the present invention, the sensor calibration test step can be specifically implemented by using existing technologies, and the manufactured thin film sensor can be calibrated and tested through the sensor calibration test.

[0069] (1) At the output end of the ITO-In2O3 thin film thermocouple, that is, the output circuit added after the functional configuration is modified, silver paste is used to make silver electrodes, and the signal is led out through a wire to ensure that the wire connection is stable and the electrical contact is good.

[0070] (2) Then connect the potential output wire of the ITO-In2O3 thin film thermocouple to the existing data acquisition system, and set the acquisition frequency to 1-3 Hz to collect the potential output.

[0071] (3) Clamp the output end of the ITO-In2O3 thin film thermocouple with a water cooling block, set the water cooling temperature to 10-15°C, and stick a K-type thermocouple on the output end, while recording the cold end temperature output.

[0072] (4) Place the junction end of the ITO-In2O3 thin film thermocouple on a temperature-controllable heating table and set the heating temperature to 100℃, 200℃, 300℃, and 400℃ respectively. Maintain each temperature for 60-90s in turn. Paste a K-type thermocouple at the junction end and record the hot end temperature output at the same time.

[0073] (5) Record the output potential value, cold end temperature value and hot end temperature value of the ITO-In2O3 thin film thermocouple.

[0074] Theoretically, the femtosecond laser cutting-based thin-film sensor configuration modification method of the present invention can be used to modify the functional configuration of various thin-film sensors made from metals and semiconductors. Therefore, in addition to the aforementioned ITO-In2O3 thin-film thermocouple, the femtosecond laser cutting-based thin-film sensor configuration modification method of the present invention can also be applied to modify the functional configuration of other existing thin-film sensors. In addition to ITO and In2O3, this also includes, but is not limited to, semiconductor thermocouple thin-film materials such as SnO2 and TiO2, and metal thermocouple thin-film materials such as RtRh, Rt, Cu, and CuNi.

[0075] The present invention uses low-thermal response femtosecond laser cutting of thin films to manufacture fine circuits to achieve high-density manufacturing of thin film sensors. Further, based on laser selectivity, existing thin film sensors can be processed secondary to further refine the circuits or modify parameters such as the type, measurement point location, and quantity of thin film sensors, thereby achieving dynamic adjustment of the thin film sensors.

[0076] The core innovation of this invention is to use a femtosecond laser to cut a thin film of sensor material in a specific sensor configuration to manufacture a thin film sensor. Further, the manufactured thin film sensor can be further processed by femtosecond laser cutting to modify the functional configuration and even the type of the thin film sensor to match more critical test data requirements.

[0077] In a method for manufacturing a thin film sensor based on femtosecond laser cutting and modifying its configuration according to this invention, first, a thin film of sensor material is manufactured on a substrate through inkjet printing technology (the types of sensor materials required and the distribution of thin films of each sensing material type need to be collaboratively optimized according to the subsequent cutting of the thin film sensor); further, based on the requirements of the functional configuration of the thin film sensor, femtosecond laser cutting is performed on the deposited thin film of sensor material to manufacture the required thin film sensor components, such as Figure 1 shown. The manufactured thin film sensor components are used to measure the target physical field and collect test data. Based on data analysis, the further test area is determined, and a secondary processing strategy for the thin film sensor, that is, a functional configuration modification strategy, is designed. According to the functional configuration modification strategy, a femtosecond laser is used to perform secondary processing on the thin film sensor to dynamically modify parameters such as the type of thin film sensor, the position and quantity of measurement points.

[0078] As Figure 1 shown, in the first step, two adjacent thin films of thermoelectric materials are manufactured on a planar substrate through a thin film deposition technology (such as inkjet printing) ( Figure 1 thin film deposition in). In the second step, the deposited thin film is cut by a femtosecond laser (the remaining thin film is the sensor body), and a thin film sensor configuration is constructed. For example, if the thin film is cut in a "冂" shape, a common rectangular thermocouple configuration can be formed ( Figure 1 selective cutting in). After multiple cuts, a rectangular thin film thermocouple array can be manufactured, as shown by the superposition of 3 thin film thermocouples in Figure 1 . Among them, the physical object of the thin film sensor manufactured by the method of this invention and its calibration results are as shown in Figure 2 .

[0079] This invention discloses a method for manufacturing a thin film sensor based on femtosecond laser cutting and modifying its configuration. Those skilled in the art can draw on the content of this article and appropriately improve the process parameters to achieve it. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art, and they are all regarded as included in this invention. The products of this invention have been described through preferred embodiments. Relevant personnel can obviously make changes or appropriate alterations and combinations to the products described in this article without departing from the content, spirit, and scope of this invention to implement and apply the technology of this invention.

Claims

1. A method for manufacturing a thin film sensor based on femtosecond laser cutting, characterized in that: The following steps are involved: Thin films of different sensor materials are manufactured on a substrate through inkjet printing technology. Based on the requirements of the functional configuration of the thin film sensor, the deposited thin films of different sensor materials are cut by femtosecond laser to manufacture the required thin film sensor devices.

2. The method for manufacturing a thin film sensor based on femtosecond laser cutting according to claim 1, characterized in that: When manufacturing thin films of different sensor materials, the substrate is first pretreated and then heated to a certain temperature; then, the sensor material nanoparticle ink is loaded into the inkjet printing device, and the appropriate waveform is set, and highly stable sensor material ink droplets are obtained by inkjet printing on the substrate; finally, the printing parameters and pattern are set, and a highly stable sensor material film is obtained by inkjet printing on the substrate.

3. The method for manufacturing a thin film sensor based on femtosecond laser cutting according to claim 2, characterized in that: The preparation method of the sensor material nanoparticle ink comprises the following steps: dispersing the sensor material in an organic solvent to prepare a sensor material ink with a certain mass fraction; dispersing the sensor material ink for a certain period of time using ultrasonic technology, and then performing temperature control in a water bath; and finally filtering the sensor material nanoparticle ink for inkjet printing.

4. The method for manufacturing a thin film sensor based on femtosecond laser cutting according to claim 1, characterized in that: When performing femtosecond laser cutting, first adjust the spot diameter of the continuous wave femtosecond laser, and then adjust the laser power, laser scanning speed and laser scanning line spacing in sequence; draw the laser cutting path pattern according to the functional configuration of the thin film sensor, calibrate the relative position of the beam and the substrate, and then turn on the femtosecond laser for ablation cutting.

5. The method for manufacturing a thin film sensor based on femtosecond laser cutting according to claim 4, characterized in that: The pulse width of the femtosecond laser is 200-300fs, and the wavelength is 1064nm; the spot diameter of the femtosecond laser is 0.08mm±0.004mm; the laser power is 12-15W; the laser scanning speed is 1000-2000mm / s; and the laser scanning line spacing is 0.08-0.10mm.

6. The method for manufacturing a thin film sensor based on femtosecond laser cutting according to claim 1, characterized in that: The method also includes the steps of calibrating and testing the thin film sensor device.

7. A method for modifying the configuration of a thin film sensor based on femtosecond laser cutting, characterized in that: The method includes the following steps: first adjusting the spot diameter of the continuous wave femtosecond laser, and then adjusting the laser power, laser scanning speed and laser scanning line spacing in sequence; drawing the laser cutting path pattern according to the functional configuration modification strategy of the thin film sensor, calibrating the relative position of the beam and the substrate, and then turning on the femtosecond laser for ablation cutting.

8. The method for modifying the configuration of a thin film sensor based on femtosecond laser cutting according to claim 7, characterized in that: The femtosecond laser has a pulse width of 200-300 fs and a wavelength of 1064 nm.

9. The method for modifying the configuration of a thin film sensor based on femtosecond laser cutting according to claim 7, characterized in that: The femtosecond laser spot diameter is 0.08 mm ± 0.004 mm.

10. The method for modifying the configuration of a thin film sensor based on femtosecond laser cutting according to claim 7, characterized in that: The laser power is 12-15W; the laser scanning speed is 1000-2000mm / s; and the laser scanning line spacing is 0.08-0.10mm.

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