Sample stage for a molecular beam epitaxy apparatus and molecular beam epitaxy apparatus

Abstract

The application relates to a sample table of a molecular beam epitaxy device and the molecular beam epitaxy device. The sample table comprises a tray for supporting a wafer to be processed; the tray is hollow in the middle, so that part of the bottom surface of the wafer to be processed is exposed for epitaxial growth; a fork holder is connected to the tray from the outer periphery of the tray to fix the tray; the inner side of the fork holder is provided with at least two protrusions which are distributed in a circumferential direction and are connected to the outer side of the tray; or the outer side of the tray is provided with at least two protrusions which are distributed in a circumferential direction and are connected to the inner side of the fork holder, so as to reduce heat loss; a support beam is provided with a first connecting flange and is hung below a rotating mechanism through the first connecting flange, so as to rotate along with the rotation of the rotating mechanism; the support beam is located above the fork holder; and at least two support columns are connected to the fork holder and the support beam in a vertical direction, so that the fork holder and the support beam are linked. The technical scheme can reduce the energy consumption of a heating mechanism.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, and in particular to a sample table of a molecular beam epitaxy device and a molecular beam epitaxy device. BACKGROUND

[0002] The molecular beam epitaxy device is a device for growing high-quality single-crystal thin films. A sample table is provided in the molecular beam epitaxy device, and is used to support a wafer to be processed (also commonly referred to as a substrate) and heat the wafer to be processed. The sample table is a key component in the device.

[0003] The sample table in the prior art has the problem of high energy consumption of the heating mechanism. SUMMARY

[0004] Therefore, the present application provides a sample table of a molecular beam epitaxy device and a molecular beam epitaxy device to solve at least one problem in the background art.

[0005] To achieve the above object, the technical scheme of the present application is as follows:

[0006] In a first aspect, the present application provides a sample table of a molecular beam epitaxy device, comprising a holding mechanism, a heating mechanism, a rotating mechanism, a feedthrough mechanism and a supporting mechanism; wherein the holding mechanism comprises:

[0007] a tray for holding a wafer to be processed; the tray is hollow in the middle, so that part of the bottom surface of the wafer to be processed is exposed for epitaxial growth;

[0008] a holding piece connected to the outer periphery of the tray to fix the tray; the inner side of the holding piece is provided with at least two protrusions spaced apart in the circumferential direction and connected to the outer side of the tray; or the outer side of the tray is provided with at least two protrusions spaced apart in the circumferential direction and connected to the inner side of the holding piece, so as to reduce heat loss;

[0009] a support beam provided with a first connecting flange and suspended below the rotating mechanism by the first connecting flange to rotate with the rotation of the rotating mechanism; the support beam is located above the holding piece;

[0010] at least two support columns connecting the holding piece and the support beam in the vertical direction to link the holding piece and the support beam.

[0011] Optionally, the holding piece comprises a first holding strip and a second holding strip; the first holding strip and the second holding strip are both arc-shaped strips distributed around the outer periphery of the tray, and the protrusions connected to the tray are provided at both ends of the circumferential direction of the first holding strip and the second holding strip.

[0012] Optionally, the support beam comprises a first half support beam and a second half support beam, and the first half support beam and the second half support beam are both connected to the first connecting flange.

[0013] Optionally, the heating mechanism comprises:

[0014] a heating lining plate between the support beam and the tray;

[0015] a heating assembly fixedly arranged at the bottom of the heating lining plate to heat the wafer to be processed on the tray, wherein the heating assembly comprises at least one heating element, and the heating element is formed by winding a heating wire along a preset shape track, so that the heating element has two sections of the heating wire vertically spaced apart in at least a partial region.

[0016] Optionally, the density of the heating wire at the edge of the heating assembly is greater than the density of the heating wire at the middle of the heating assembly.

[0017] Optionally, the preset shape track is a spiral line.

[0018] Optionally, the pitch of the heating element at the edge of the heating assembly is greater than the pitch of the heating element at the middle of the heating assembly.

[0019] Optionally, the heating elements are distributed in a straight line on the heating lining plate.

[0020] Optionally, the heating wire is made of tantalum.

[0021] Optionally, the heating assembly is divided into a plurality of heating regions on the heating lining plate, and each heating element in each heating region is separately connected to a control component, and the heating mechanism further comprises a temperature probe, and at least one temperature probe is arranged in each heating region.

[0022] Optionally, the heating mechanism further comprises a heat shielding assembly, and the heat shielding assembly comprises a first shielding element and a second shielding element, the first shielding element is above the heating lining plate, and the second shielding element surrounds the periphery of the heating lining plate, and the first shielding element and the second shielding element each comprise at least two shielding plates spaced apart.

[0023] Optionally, the first shielding element and the second shielding element are both made of tantalum.

[0024] Optionally, the heating mechanism further comprises a second connecting flange, the heating mechanism is fixed below the feedthrough mechanism through the second connecting flange, and the position of the heating lining plate relative to the second connecting flange is adjustable.

[0025] Optionally, the rotating mechanism comprises an inner rotating mechanism in the vacuum cavity and an outer rotating mechanism outside the vacuum cavity, and the inner rotating mechanism comprises:

[0026] A first support pipe is fixed on the support mechanism and extends in the vertical direction;

[0027] An inner rotating sleeve is sleeved on the outer periphery of the first support pipe and can rotate relative to the first support pipe;

[0028] A third connecting flange is fixed on the bottom end of the inner rotating sleeve; the third connecting flange is connected with the first connecting flange, and the connection of the inner rotating mechanism and the first connecting flange through the third connecting flange establishes linkage with the fork holding mechanism;

[0029] The outer rotating mechanism comprises:

[0030] A second support pipe is fixed on the support mechanism and extends in the vertical direction;

[0031] An outer rotating sleeve is sleeved on the outer periphery of the second support pipe and can rotate relative to the second support pipe;

[0032] A power component and a gear set, one gear of the gear set is sleeved on the outer peripheral wall of the outer rotating sleeve, and another gear of the gear set is installed on the output shaft of the power component; the outer rotating sleeve can rotate under the drive of the power component via the gear set;

[0033] The outer rotating sleeve is provided with a first magnetic coupling on the circumferential side, and the inner rotating sleeve is provided with a second magnetic coupling matched with the first magnetic coupling; under the magnetic coupling of the first magnetic coupling and the second magnetic coupling, the inner rotating sleeve can rotate following the rotation of the outer rotating sleeve.

[0034] Optionally, the first magnetic coupling comprises a first magnet and a second magnet, polarities of the first magnet and the second magnet are different towards the second magnetic coupling; the first magnet and the second magnet are abutted or spaced apart in the vertical direction.

[0035] In a second aspect, the embodiments of the present application provide a molecular beam epitaxy device, comprising the sample table of any one of the molecular beam epitaxy devices described above.

[0036] The sample table and the molecular beam epitaxy device provided by the embodiment of the present application comprise: a tray for supporting a wafer to be processed; the tray is hollow in the middle, so that part of the bottom surface of the wafer to be processed is exposed for epitaxial growth; a fork holder is connected to the tray from the outer periphery of the tray to fix the tray; the inner side of the fork holder is provided with at least two protrusions distributed in the circumferential direction and connected to the outer side of the tray; or the outer side of the tray is provided with at least two protrusions distributed in the circumferential direction and connected to the inner side of the fork holder, so as to reduce heat loss; a support beam is provided with a first connecting flange and is hoisted below a rotating mechanism through the first connecting flange to rotate with the rotation of the rotating mechanism; the support beam is located above the fork holder; at least two support columns are connected to the fork holder and the support beam in the vertical direction to link the fork holder and the support beam. It can be seen that the sample table and the molecular beam epitaxy device provided by the embodiment of the present application reduce the heat loss of the clamping mechanism and the energy consumption of the heating mechanism by arranging at least two protrusions distributed in the circumferential direction on the inner side of the fork holder and connected to the outer side of the tray, or arranging at least two protrusions distributed in the circumferential direction on the outer side of the tray and connected to the inner side of the fork holder. Therefore, the sample table and the molecular beam epitaxy device provided by the embodiment of the present application can reduce the energy consumption of the heating mechanism.

[0037] Additional aspects and advantages of the present application will be made apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0038] The accompanying drawings, which are included to provide a further understanding of the present application and are incorporated in and constitute a part of this application, illustrate embodiments of the present application and serve to explain the principles of the present application, and do not limit the present application in any manner. In the drawings:

[0039] Figure 1 A perspective view of the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure;

[0040] Figure 2 A side view of the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure; Figure 1 A side view of the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure;

[0041] Figure 3 A sectional view of the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure; Figure 2 A sectional view of the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure;

[0042] Figure 4 A schematic view of the fork holding mechanism in the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure;

[0043] Figure 5 A schematic view of the heating mechanism in the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure;

[0044] Figure 6 A schematic view of the heating mechanism in the sample table of the molecular beam epitaxy device provided by the embodiment of the present application is shown in the figure;Figure 5 a sectional view in a side view direction;

[0045] Figure 7 is a bottom projection view schematic diagram of the application; Figure 5

[0046] Figure 8 is a schematic diagram of the inner rotation mechanism in the sample table of the molecular beam epitaxy equipment provided by the embodiments of the application;

[0047] Figure 9 is a bottom projection view schematic diagram of the application; Figure 8 a sectional view in a side view direction;

[0048] Figure 10 is a schematic diagram of the outer rotation mechanism in the sample table of the molecular beam epitaxy equipment provided by the embodiments of the application;

[0049] Figure 11 is a bottom projection view schematic diagram of the application; Figure 10 a sectional view in a side view direction;

[0050] Figure 12 is a distribution schematic diagram of the first magnetic coupling in the outer rotation mechanism in the sample table of the molecular beam epitaxy equipment provided by the embodiments of the application.

[0051] BRIEF DESCRIPTION OF DRAWINGS

[0052] 10, fork holding mechanism; 11, tray; 12, fork holding piece; 121, protrusion; 13, support beam; 131, first connecting flange; 132, first half support beam; 133, second half support beam; 14, support column; 20, heating mechanism; 21, heating lining plate; 22, heating assembly; 221, intermediate heating piece; 222, edge heating piece; 23, first shielding piece; 24, second shielding piece; 25, second connecting flange; 26, upper shielding plate; 31, inner rotation mechanism; 311, first support tube; 312, inner rotation sleeve; 313, third connecting flange; 314, second magnetic coupling; 32, outer rotation mechanism; 321, second support tube; 322, outer rotation sleeve; 323, power component; 324, second cylindrical gear; 325, first magnetic coupling; 3251, first magnet; 3252, second magnet; 40, feedthrough mechanism; 50, support mechanism; 60, lifting mechanism. DETAILED DESCRIPTION

[0053] In order to make the technical solutions and beneficial effects of the application more obvious and easy to understand, the following will be described in detail by listing specific embodiments. The drawings are not necessarily drawn to scale, and local features can be enlarged or reduced to more clearly show the details of local features; unless otherwise defined, the technical and scientific terms used herein have the same meaning as the technical and scientific terms in the technical field to which the application belongs. ​

[0054] In the description of the present application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate the orientation or positional relationship shown in the drawings, which are only for the convenience of the simplified description of the present application, and do not indicate that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and cannot be understood as limiting the present application.

[0055] In the present application, the terms "first", "second" are only used for the purpose of clear description, and cannot be understood as the relative importance of the indicated features or the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc.; the meaning of "several" is at least one, such as one, two, three, etc.; except for the explicit specific limitation.

[0056] In the present application, unless otherwise explicitly limited, the terms "mount", "connect", "connect", "fix", "set" and the like should be broadly understood. For example, "connection" can be fixed connection, or detachable connection, or integral; can be mechanical connection, or electrical connection; can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements or the interaction relationship of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0057] In the present application, unless otherwise explicitly limited, the first feature "on", "over", "above" and "on", "below", "under", "below" or "below" the second feature can be the direct contact of the first feature and the second feature, or the indirect contact of the first feature and the second feature through the intermediate medium. Moreover, the first feature "over", "above" and "above" the second feature can be directly above or obliquely above the first feature, or only indicate that the horizontal height of the first feature is higher than the horizontal height of the second feature. The first feature "under", "below" and "below" the second feature can be directly below or obliquely below the first feature, or only indicate that the horizontal height of the first feature is less than the horizontal height of the second feature.

[0058] In order to thoroughly understand the present application, detailed steps and detailed structures will be proposed in the following description in order to explain the technical scheme of the present application. The preferred embodiments of the present application are described in detail as follows, however, in addition to these detailed descriptions, the present application can also have other implementation manners.

[0059] The applicant has found in the research and development that one of the reasons why the heating mechanism in the prior art has relatively high energy consumption is that in order to stably support the tray supporting the wafer, the inner side of the fork holding piece is entirely attached to the tray. Therefore, the applicant has further developed the following technical scheme.

[0060] The embodiment of the present application provides a sample table of a molecular beam epitaxy device. Referring to Figures 1-4 , the sample table of the molecular beam epitaxy device comprises a fork holding mechanism 10, a heating mechanism 20, a rotating mechanism, a feedthrough mechanism 40 and a supporting mechanism 50; wherein the fork holding mechanism 10 comprises:

[0061] A tray 11 is used for supporting a wafer to be processed; the middle of the tray 11 is hollowed out, so that part of the bottom surface of the wafer to be processed is exposed, for epitaxial growth;

[0062] A fork holding piece 12 is connected to the tray 11 from the outer periphery of the tray 11 to fix the tray 11; the inner side of the fork holding piece 12 is provided with at least two protrusions 121 distributed in a circumferential direction to connect the outer side of the tray 11; or the outer side of the tray 11 is provided with at least two protrusions 121 distributed in a circumferential direction to connect the inner side of the fork holding piece 12, so as to reduce heat loss;

[0063] A supporting beam 13 is provided with a first connecting flange 131 and is hoisted below the rotating mechanism through the first connecting flange 131 to rotate with the rotation of the rotating mechanism; the supporting beam 13 is located above the fork holding piece 12;

[0064] At least two supporting columns 14 connect the fork holding piece 12 and the supporting beam 13 in a vertical direction, so that the fork holding piece 12 and the supporting beam 13 are linked.

[0065] It can be understood that the processing surface of the wafer to be processed is on the bottom surface, that is, the source furnace providing the molecular beam flow required for epitaxial growth is below the wafer to be processed. Therefore, the middle of the tray 11 needs to be hollowed out, and the area of the hollowed-out part occupies most of the tray 11, and the wafer to be processed is supported by a ring-shaped strip around the periphery of the tray 11.

[0066] It can be understood that the fork holding piece 12 can be a connecting intermediate piece connecting the tray 11 and the supporting beam 13, and the supporting beam 13 is connected to the rotating mechanism, so that the rotating structure can drive the tray 11 to rotate, that is, drive the wafer to be processed on the tray 11 to rotate, so as to facilitate more uniform epitaxial growth. The fork holding piece 12 is provided with protrusions 121 distributed in a circumferential direction to connect the outer side of the tray 11, or the tray 11 is provided with protrusions 121 distributed in a circumferential direction to connect the fork holding piece 12, so as to reduce the contact area, reduce heat conduction and reduce heat loss.

[0067] Specifically, the protrusions 121 can be elongated protrusions with small cross-sectional areas, so as to further reduce the contact area. More specifically, the protrusions 121 can be provided with a certain slope or curvature to form a shape with a small contact area and a large root, so as to maintain a certain strength while reducing the contact area.

[0068] It can be understood that the at least two support columns 14 are arranged such that there is a vertical spacing space between the tray 11 and the support beam 13, and the heating mechanism 20 can be arranged in the spacing space.

[0069] The sample table of the molecular beam epitaxy device according to the embodiments of the present application is connected to the outer side of the tray 11 by arranging at least two circumferentially spaced protrusions 121 on the inner side of the fork holder 12, or is connected to the inner side of the fork holder 12 by arranging at least two circumferentially spaced protrusions 121 on the outer side of the tray 11, thereby reducing heat loss of the clamping mechanism and reducing energy consumption of the heating mechanism 20.

[0070] In some other embodiments of the present application, referring to Figure 4 , the fork holder 12 includes a first fork holder strip and a second fork holder strip; the first fork holder strip and the second fork holder strip are both arc-shaped strips distributed around the outer periphery of the tray 11, and both are provided with the protrusions 121 connected to the tray 11 at both ends in the circumferential direction of the first fork holder strip and the second fork holder strip.

[0071] That is, two protrusions 121 are arranged on each of the two fork holder strips, and a total of four protrusions 121 are arranged to connect the tray 11, so that the position of the tray 11 is stable enough and the heat loss is not large.

[0072] In some other embodiments of the present application, referring to Figure 4 , the support beam 13 includes a first half support beam 132 and a second half support beam 133, and the first half support beam 132 and the second half support beam 133 are both connected to the first connecting flange 131.

[0073] In this way, it is more convenient to install and maintain. For example, the space for disassembling and removing one of the first half support beam 132 and the second half support beam 133 is relatively small, and other components do not need to be disassembled.

[0074] In some other embodiments of the present application, referring to Figures 5-7 , the heating mechanism 20 includes:

[0075] a heating lining plate 21 located between the support beam 13 and the tray 11;

[0076] The heating assembly 22 is fixedly arranged at the bottom of the heating lining 21 to heat the wafer to be processed on the tray 11. The heating assembly 22 comprises at least one heating element, and the heating element is formed by winding a heating wire along a preset shape track, so that the heating element has two sections of heating wires vertically spaced apart in at least a partial region.

[0077] It can be understood that, compared with the heating wire arranged in a plane, the heating wire vertically spaced apart in two sections can greatly increase the heating wire surface area per unit area, thereby improving the heating capacity.

[0078] Specifically, the heating wire can be an electric heating wire, so that the heating is easier to control.

[0079] In some other embodiments of the present application, referring to Figure 7 , the heating wire density of the edge of the heating assembly 22 is greater than the heating wire density of the middle of the heating assembly 22.

[0080] Since the linear speed of the wafer to be processed is different between the outer edge and the middle in rotation, the heating is not uniform. The present application creatively sets the heating wire density of the outer edge to be greater than the heating wire density of the middle. In this way, the heating capacity of the outer edge can be greater, thereby compensating for the problem of uneven heating caused by the different linear speeds of the inner and outer edges.

[0081] In some other embodiments of the present application, referring to Figure 7 , the preset shape track is a spiral line.

[0082] In this way, the winding is more convenient, and the processing cost is low.

[0083] In some other embodiments of the present application, the pitch of the heating element of the edge of the heating assembly 22 is greater than the pitch of the heating element of the middle of the heating assembly 22.

[0084] That is, the density of the heating wire is controlled by controlling the pitch, and the processing is more convenient.

[0085] In some other embodiments of the present application, the heating element is distributed in a straight line on the heating lining 21.

[0086] Compared with the plurality of heating rings (i.e., annular distribution) in the prior art, the straight line distribution adopted in the embodiments of the present application does not cause the wafer to be processed to generate a significant annular cold zone and an annular hot zone, thereby causing the growth quality of the wafer to be processed to be poor. That is, the part corresponding to the heating ring is the annular hot zone, and the part corresponding to the gap between the adjacent heating rings is the annular cold zone.

[0087] In some other embodiments of the present application, the heating wire is made of tantalum.

[0088] Compared with the graphene (PG, Polymer Graphene) heating wire in the prior art, the tantalum is formed into a tantalum wire with a more uniform cross section by a simple drawing forming process. The heating element does not need to be provided with a protective layer of pyrolytic boron nitride (PBN), that is, a sandwich structure of PBN+PG+PBN is adopted, and the structure is simpler. In addition, the tantalum has higher reliability and service life.

[0089] In some other embodiments of the present application, the heating assembly 22 is divided into a plurality of heating areas on the heating backing plate 21; the heating elements in each of the heating areas are individually connected to the control component; and the heating mechanism 20 further comprises temperature probes, at least one of which is arranged in each of the heating areas.

[0090] In this way, the operation of the heating elements can be adjusted according to the temperature of the heating area measured by the temperature probe, so that the heating of the wafer to be processed is more uniform.

[0091] Specifically, the heating areas can be divided into a middle area and an edge area, and accordingly, the heating elements are divided into middle heating elements 221 and edge heating elements 222. The edge heating elements 222 and the middle heating elements 221 are both wound along a helix by the heating wire, and the pitch of the edge heating elements 222 is greater than that of the middle heating elements 221. In this way, the heating of the wafer to be processed is more uniform, and the structure is simple and the cost is reduced. It can be understood that more heating areas can also be divided.

[0092] In some other embodiments of the present application, the heating mechanism 20 further comprises a heat shielding assembly, which comprises a first shielding element 23 and a second shielding element 24; the first shielding element 23 is above the heating backing plate 21, and the second shielding element 24 surrounds the circumference of the heating backing plate 21; and the first shielding element 23 and the second shielding element 24 each comprise at least two layers of shielding plates arranged at intervals.

[0093] It should be noted that the first shielding element 23 and the second shielding element 24 are both used for shielding heat radiation. Since the heating mechanism 20 is in a vacuum environment, heat is mainly transferred by radiation.

[0094] Specifically, the first shielding element 23 and the second shielding element 24 are both provided with a reflection surface facing the heating assembly 22, so as to reduce heat radiation by reflection and shield the transfer of heat energy outward.

[0095] More specifically, the first shielding element 23 is provided with three layers of shielding plates arranged at intervals, and the second shielding element 24 is provided with two layers of shielding plates arranged at intervals. In this way, the shielding effect is better. Specifically, compared with the heating mechanism 20 in the prior art, the energy consumption can be reduced by 20% by the above-mentioned arrangement of the first shielding element 23 and the second shielding element 24.

[0096] In some embodiments of the present application, referring to Figure 6 , the first shield 23 and the second shield 24 are both made of tantalum.

[0097] Tantalum has excellent heat shielding performance in vacuum environment, thus, using tantalum can obtain better heat shielding effect and reduce heat loss.

[0098] In some embodiments of the present application, referring to Figure 5 and Figure 6 , the heating mechanism 20 further comprises a second connecting flange 25, the heating mechanism 20 is fixed below the feedthrough mechanism 40 through the second connecting flange 25, and the position of the heating lining plate 21 relative to the second connecting flange 25 is adjustable.

[0099] In this way, the position of the heating lining plate 21 can be adjusted so that the heating surface formed by the heating assembly 22 is more perpendicular to the rotation axis of the tray 11, thereby improving the uniformity of heating. Specifically, the heating mechanism 20 further comprises an upper shielding plate 26, the upper shielding plate 26 is located above the heating lining plate 21 and connected with the heating lining plate 21. The upper shielding plate 26 is adjustably connected with the second connecting flange 25. In this way, the position of the upper shielding plate 26 relative to the second connecting flange 25 can be adjusted, and then the position of the heating lining plate 21 relative to the second connecting flange 25 can be adjusted, thereby improving the uniformity of heating.

[0100] More specifically, the upper shielding plate 26 and the second connecting flange 25 can be connected by means of screws and threaded holes, and the position of the upper shielding plate 26 relative to the second connecting flange 25 can be adjusted by the depth of the screw being screwed into the threaded hole. After adjustment is completed, the position after adjustment can be fixed by a nut fitted on the screw.

[0101] It can be understood that, for the heating element being an electric heating wire, the feedthrough mechanism 40 can electrically connect the electric energy provided by the power supply to the heating element. In addition, the feedthrough mechanism 40 can transmit the temperature data measured by the temperature probe to the outside of the vacuum chamber for processing. The improvement points of the feedthrough mechanism 40 are not within the disclosure range of the present application and are not described in detail.

[0102] In some embodiments of the present application, referring to Figure 1 , the rotating mechanism comprises an inner rotating mechanism 31 located in the vacuum chamber and an outer rotating mechanism 32 located outside the vacuum chamber, referring to Figure 8 and Figure 9 , the inner rotating mechanism 31 comprises:

[0103] a first support pipe 311 fixed on the support mechanism 50 and extending in the vertical direction;

[0104] The inner rotating sleeve 312 is sleeved on the outer periphery of the first supporting pipe 311 and can rotate relative to the first supporting pipe 311;

[0105] The third connecting flange 313 is fixed at the bottom end of the inner rotating sleeve 312; the third connecting flange 313 is connected with the first connecting flange 131, and the linkage between the inner rotating mechanism 31 and the fork holding mechanism 10 is established through the connection between the third connecting flange 313 and the first connecting flange 131;

[0106] Reference Figure 10 And Figure 11 The outer rotating mechanism 32 comprises:

[0107] The second supporting pipe 321 is fixed on the supporting mechanism 50 and extends in the vertical direction;

[0108] The outer rotating sleeve 322 is sleeved on the outer periphery of the second supporting pipe 321 and can rotate relative to the second supporting pipe 321;

[0109] The power component 323 and a gear set, one gear of the gear set is sleeved on the outer peripheral wall of the outer rotating sleeve 322, and another gear of the gear set is installed on the output shaft of the power component 323; the outer rotating sleeve 322 can rotate under the driving of the power component 323 via the gear set;

[0110] The periphery of the outer rotating sleeve 322 is provided with a first magnetic coupling 325, and the periphery of the inner rotating sleeve 312 is provided with a second magnetic coupling 314 matched with the first magnetic coupling 325; under the magnetic coupling of the first magnetic coupling 325 and the second magnetic coupling 314, the inner rotating sleeve 312 can rotate following the rotation of the outer rotating sleeve 322.

[0111] Compared with the design that the transmission gear in the prior art is located in the vacuum cavity, the gear set in the embodiment of the present application is located outside the vacuum cavity. In this way, the generation of gas due to the meshing friction of the gear is reduced, and the growth quality of the wafer to be processed is improved. The problem that the equipment utilization rate is reduced due to the opening of the vacuum system caused by the replacement of the gear due to wear is also reduced. It should be noted that the recovery after the vacuum system is opened needs to take at least one month.

[0112] It can be understood that the supporting mechanism 50 is a mechanism that does not move relative to the fork holding mechanism 10, the heating mechanism 20, the rotating mechanism and the feedthrough mechanism 40 and the like. The improvement of the supporting mechanism 50 is not within the disclosure range of the present application, and is not described in detail.

[0113] It can be understood that the gear set can comprise at least two gears, one of which is a driving gear, for example, the one connected with the power component 323 is a driving gear, and the others are driven gears.

[0114] Specifically, the output end of the power component 323 is provided with a first cylindrical gear, the outer circumferential sleeve of the outer rotating sleeve 322 is provided with a second cylindrical gear 324 matched with the first cylindrical gear, and the second cylindrical gear 324 and the outer rotating sleeve 322 are linked. In this way, the second cylindrical gear 324 rotates under the drive of the power component 323, and the outer rotating sleeve 322 rotates in linkage.

[0115] Then, the inner rotating sleeve 312 can rotate following the rotation of the outer rotating sleeve 322 through the magnetic coupling of the first magnetic coupling 325 and the second magnetic coupling 314. In this way, the inner rotating sleeve 312 in the vacuum cavity can also realize rotation without the need of setting gears and the power component 323, which improves the reliability, maintainability and service life of the equipment.

[0116] In some other embodiments of the present application, referring to Figure 12 , the first magnetic coupling 325 includes a first magnet 3251 and a second magnet 3252, polarities of the first magnet 3251 and the second magnet 3252 towards the second magnetic coupling 314 are different; the first magnet 3251 and the second magnet 3252 are abutted or spaced in the vertical direction.

[0117] For example, the south (S) pole of the first magnet 3251 is towards the second magnetic coupling 314, and the north (N) pole of the second magnet 3252 is towards the second magnetic coupling 314. It is detected that through such a setting, the magnetic coupling force is improved by 15%-20%.

[0118] In some other embodiments of the present application, referring to Figures 1-3 , the sample table of the molecular beam epitaxy equipment further includes a lifting mechanism 60 for lifting the rotating mechanism, so as to adjust the height of the fork holding mechanism 10 and facilitate the growth of the wafer to be processed. The improvement point is not within the disclosure range of the embodiments of the present application, and is not described in detail here.

[0119] The embodiments of the present application also provide a molecular beam epitaxy equipment, which includes the sample table of the molecular beam epitaxy equipment described above.

[0120] The molecular beam epitaxy equipment of the embodiments of the present application reduces the heat loss of the clamping mechanism and reduces the energy consumption of the heating mechanism 20 by arranging at least two circumferentially spaced protrusions 121 on the inner side of the fork holding piece 12 to connect the outer side of the tray 11, or arranging at least two circumferentially spaced protrusions 121 on the outer side of the tray 11 to connect the inner side of the fork holding piece 12.

[0121] It should be understood that the above examples are exemplary and are not intended to encompass all possible implementations of the technical solutions contained in the present application. Various modifications and changes can also be made on the basis of the above examples without departing from the scope of the present application. Similarly, any combination of the technical features of the above examples can also be made to form additional embodiments of the present application that can not be explicitly described. Therefore, the above examples only express several implementations of the present application, and do not limit the protection scope of the patent of the present application.

Claims

1. A sample stage of a molecular beam epitaxy apparatus, characterized by, The fork holding mechanism, the heating mechanism, the rotating mechanism, the feedthrough mechanism and the supporting mechanism; wherein the fork holding mechanism comprises: A tray for supporting a wafer to be processed; the middle of the tray is hollowed out, so that part of the bottom surface of the wafer to be processed is exposed for epitaxial growth; A fork connecting the tray from the outer periphery of the tray to fix the tray; the inner side of the fork is provided with at least two circumferentially spaced protrusions connecting the outer side of the tray; or the outer side of the tray is provided with at least two circumferentially spaced protrusions connecting the inner side of the fork to reduce heat loss; A support beam provided with a first connecting flange and hoisted below the rotating mechanism through the first connecting flange to rotate with the rotation of the rotating mechanism; the support beam is located above the fork; At least two support columns connecting the fork and the support beam in the vertical direction to link the fork and the support beam; The heating mechanism comprises: A heating liner plate between the support beam and the tray; A heating assembly fixedly arranged at the bottom of the heating liner plate to heat the wafer to be processed on the tray; the heating assembly comprises at least one heating element, and the heating element is wound by a heating wire along a preset shape trajectory, so that the heating element has two sections of heating wires spaced in the vertical direction in at least part of the area; The heating wire density of the edge of the heating assembly is greater than the heating wire density of the middle of the heating element.

2. The sample holder of a molecular beam epitaxy apparatus according to claim 1, wherein The fork comprises a first fork strip and a second fork strip; the first fork strip and the second fork strip are both arc-shaped strips distributed on the outer periphery of the tray, and both are provided with the protrusions connecting the tray at both ends of the circumferential direction of the first fork strip and the second fork strip.

3. A sample holder for a molecular beam epitaxy apparatus according to claim 2, wherein The support beam comprises a first half support beam and a second half support beam, and the first half support beam and the second half support beam are both connected to the first connecting flange.

4. The sample holder of a molecular beam epitaxy apparatus according to claim 1, wherein The preset shape trajectory is a spiral line.

5. A sample holder for a molecular beam epitaxy apparatus according to claim 4, wherein The pitch of the heating element at the edge of the heating assembly is greater than the pitch of the heating element in the middle of the heating assembly.

6. The sample holder of a molecular beam epitaxy apparatus according to claim 1, wherein The heating element is distributed in a straight line on the heating liner plate.

7. The sample holder of a molecular beam epitaxy apparatus according to claim 1, wherein The heating wire is made of tantalum.

8. A sample holder for a molecular beam epitaxy apparatus according to any one of claims 1 to 7, wherein The heating assembly is divided into a plurality of heating areas on the heating liner plate; the heating element in each heating area is separately connected to a control component; the heating mechanism further comprises a temperature probe, and at least one temperature probe is provided in each heating area.

9. A sample holder for a molecular beam epitaxy apparatus according to any one of claims 1 to 7, wherein The heating mechanism further comprises a heat shielding assembly, the heat shielding assembly comprises a first shielding element and a second shielding element; the first shielding element is above the heating liner plate, and the second shielding element surrounds the circumferential direction of the heating liner plate; the first shielding element and the second shielding element both comprise at least two layers of shielding plates arranged in a spaced manner.

10. A sample holder for a molecular beam epitaxy apparatus according to claim 9, wherein, The first shielding element and the second shielding element are both made of tantalum.

11. A sample holder for a molecular beam epitaxy apparatus according to any one of claims 1 to 7, wherein The heating mechanism further comprises a second connecting flange, and the heating mechanism is fixed below the feedthrough mechanism through the second connecting flange; the position of the heating liner plate relative to the second connecting flange is adjustable.

12. The sample holder of a molecular beam epitaxy apparatus according to claim 1, wherein The rotating mechanism comprises an inner rotating mechanism located in the vacuum cavity and an outer rotating mechanism located outside the vacuum cavity, the inner rotating mechanism comprises: a first support pipe fixed on the support mechanism and extending in the vertical direction; an inner rotating sleeve sleeved on the outer periphery of the first support pipe and capable of rotating relative to the first support pipe; a third connecting flange fixed at the bottom end of the inner rotating sleeve; the third connecting flange is connected with the first connecting flange, and the inner rotating mechanism is connected with the first connecting flange through the connection of the third connecting flange to establish linkage with the fork holding mechanism; the outer rotating mechanism comprises: a second support pipe fixed on the support mechanism and extending in the vertical direction; an outer rotating sleeve sleeved on the outer periphery of the second support pipe and capable of rotating relative to the second support pipe; a power component and a gear set, one gear of the gear set is sleeved on the outer peripheral wall of the outer rotating sleeve, and the other gear of the gear set is installed on the output shaft of the power component; the outer rotating sleeve can rotate under the drive of the power component via the gear set; a first magnetic coupling member is arranged on the circumferential side of the outer rotating sleeve, and a second magnetic coupling member matched with the first magnetic coupling member is arranged on the circumferential side of the inner rotating sleeve; under the magnetic coupling of the first magnetic coupling member and the second magnetic coupling member, the inner rotating sleeve can rotate following the rotation of the outer rotating sleeve.

13. The sample holder of a molecular beam epitaxy apparatus according to claim 12, wherein The first magnetic coupling member comprises a first magnet and a second magnet, the polarities of the first magnet and the second magnet towards the second magnetic coupling member are different; the first magnet and the second magnet are abutted or spaced in the vertical direction.

14. A molecular beam epitaxy apparatus, characterized by, A sample table comprising the molecular beam epitaxy apparatus of any one of claims 1-13. A sample table comprising the molecular beam epitaxy apparatus of any one of claims 1-13.

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