Preparation method of low-flash-point high-anti-glare AG glass based on MASK design

Abstract

The invention discloses a preparation method of low-flash-point high-anti-glare (AG) glass based on MASK design. The preparation method comprises the following steps: 1) treating a glass substrate; 2) plating a functional coating; 3) coating a photoresist; (4) designing and exposing a MASK pattern; 5) developing; (6) etching; 7) removing the photoresist; (8) carrying out acid etching on the glass substrate; (9) removing the functional layer; and 10) post-processing. And accurate regulation and control of the surface microstructure of the AG glass are realized by accurately controlling key parameters of the MASK. The core of the method is to optimize the aperture (3-50 [mu] m), the period (15-100 [mu] m) and the arrangement mode of the MASK so as to mainly solve the technical problems of the traditional AG glass in the aspects of anti-glare performance and flash point control.

Description

Technical Field

[0001] The present invention belongs to the field of display technology, and in particular relates to a method for preparing low-flash-point and high-anti-glare AG glass based on MASK design. Background Art

[0002] In the process of implementing the present invention, the inventors discovered that the prior art has at least the following problems:

[0003] The rapid development of display technology has made display screens an indispensable window for information interaction in modern life. Anti-glare (AG) glass, a key optical component for enhancing display quality, uses a special surface treatment process to reduce ambient light reflection, enhance the clarity of displayed content, and provide users with a superior visual experience. AG glass is increasingly used in various electronic devices, including smartphones, tablets, and monitors.

[0004] Traditional AG glass is primarily produced using a frosting process. This process uses chemical reagents such as hydrofluoric acid to etch the glass surface, creating a micron-scale rough structure to achieve an anti-glare effect. Although the frosting process is low-cost and easy to operate, its technical limitations are becoming increasingly prominent. The randomness of the chemical reaction results in the microstructure of the glass surface being of varying sizes and unevenly distributed, making it difficult to ensure the stability of optical properties. Even slight fluctuations in process parameters such as acid concentration, temperature, and reaction time can lead to significant differences in product quality. Furthermore, the surface structure formed by the frosting process is relatively rough, which not only affects the light transmittance of the glass but also easily accumulates dirt, making product maintenance more difficult. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a preparation method of low-flash-point and high-anti-glare AG glass based on MASK design, and to achieve precise control of the surface microstructure of AG glass by precisely controlling the key parameters of MASK, thereby solving the technical difficulties of traditional AG glass in anti-glare performance and flash point control.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a method for preparing low-flash point and high-anti-glare AG glass based on MASK design, comprising the following steps: 1) glass substrate processing; 2) functional coating plating; 3) photoresist coating; 4) MASK pattern design and exposure; 5) development;

[0007] 6) Etching; 7) Photoresist removal; 8) Acid etching of glass substrate; 9) Removal of functional layer; 10) Post-processing.

[0008] In step 1) above, deionized water is first used for preliminary rinsing, and dust and organic impurities on the surface of the substrate are removed by a soft brush or ultrasonic means; a low-concentration detergent or solvent is added for degreasing and deoiling; the treatment temperature range is 20-100°C, and the treatment time is 1-10 minutes.

[0009] In the above step 2), a layer of functional material, including silicate or polymer, is coated on the surface of the glass substrate by spin coating, dip coating, spray coating or plating; the material selection includes ITO, Cr, Mo, SiO2 or Si3N4; the coating thickness ranges from 0.01 to 30 μm; the film layer is prepared by vacuum coating or evaporation technology, including but not limited to physical vapor deposition, chemical vapor deposition and sputtering of functional coatings.

[0010] In step 3) above, a positive or negative photoresist is selected according to the process requirements, with a thickness controlled within the range of 0.01-30 μm. The slit coating method is used, the speed is controlled within the range of 10-200 mm / s, and the spray pressure is 0.03-0.98 MPa. After coating, a soft bake treatment is performed at 50-200°C for 30-300 seconds to remove the solvent. After coating, a soft bake treatment is performed at a temperature range of 50-250°C for a time of 1-10 minutes.

[0011] In step 4) above, the designed MASK graphic forms include but are not limited to:

[0012] 1) Regular arrangement: including the formation of orthogonal arrays - such as rectangular grids, hexagonal close-packed - honeycomb-like, or other periodic or quasi-periodic arrangements;

[0013] 2) Irregular arrangement: including random distribution, pseudo-random distribution, or arrangement according to a specific spatial distribution function - including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution and other probability density functions, or a combination thereof;

[0014] 3) Combination arrangement: basic units of various shapes or sizes are mixed and arranged in a regular or irregular manner as described above;

[0015] 4) Specific structural arrangement: including the formation of fractal structures, gradient distribution structures - gradual changes in unit density or size, or other arrangements with specific spatial correlations.

[0016] In step 4), during the exposure process, contact, proximity, or projection exposure equipment is selected based on the batch production method and pattern resolution requirements; the exposure energy is set at 50-500 mJ / cm 2The alignment error is determined by the photosensitivity of the photoresist used, the wavelength of the light source and the required resolution. Common light source wavelengths include i-line-365nm, h-line-405nm and g-line-436nm. For situations where multi-layer structure exposure is required, the double-sided alignment system is used to control the alignment error within ±0.5-1 μm.

[0017] In step 5) above, a developer is used to selectively remove the photoresist and reproduce the mask pattern under precisely controlled conditions of a temperature of 20-30°C and a time of 30-90 seconds. The development is performed by immersion or spraying. After completion, the substrate is rinsed with deionized water, dried, and post-baked at an appropriate temperature of 50-300°C.

[0018] In step 6) above, the photoresist pattern is cured: thermal curing or UV curing at 50-500°C for 1-60 minutes; a matching chemical etchant is selected for the specific functional coating, and wet etching is performed under controlled concentration and time conditions; the etching process is monitored; after the reaction is completed, it is thoroughly cleaned and dried; and finally, a patterned functional thin film layer is obtained, which serves as a mask for subsequent glass etching.

[0019] In step 7), to ultimately obtain the desired microstructure pattern, the photoresist remaining from the previous process needs to be completely removed; this stripping process is achieved using wet chemical treatment or dry plasma etching technology; the operation time required for this step is controlled to be 1-15 minutes; after completing this step, the substrate surface is clean and free of residue; in step 8), after removing the photoresist, the functional layer pattern previously protected by the photoresist is exposed, and the patterned functional layer will now serve as an etching mask; the glass substrate with the patterned functional layer mask is immersed in or exposed to a wet etching solution, and the exposed glass substrate area is selectively etched; the wet etching solution is an acidic solution, a monobasic or polybasic acid containing fluorine, or a buffered oxide etching solution, or a mixed solution of other acids or additives.

[0020] In step 9) above, the functional coating is removed by wet chemical etching; the corresponding etchant is selected according to the coating material; the etching is carried out in a tank or horizontal etcher, and the process conditions are controlled, including the solution temperature: 20-50°C and the etching time; the etching time is determined according to the thickness, material and etching rate until the coating is completely dissolved; in step 10) above, the surface of the microstructure is functionalized, and the methods used include fluorination treatment and other chemical modification pathways; the treatment temperature is maintained at 20-100°C, and the treatment time is controlled at 1-60 minutes.

[0021] One of the aforementioned technical solutions offers the following advantages or benefits: precise control of the AG glass surface microstructure by precisely controlling key mask parameters. This approach focuses on addressing the technical challenges of traditional AG glass in terms of anti-glare performance and flash point control by optimizing the mask's aperture (3-50μm), period (15-100μm), and arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Schematic diagram of the MASK design with different apertures, periods and arrangements for the preparation method of the low-flash-point and high-anti-glare AG glass based on the MASK design provided in an embodiment of the present invention;

[0023] Figure 2 for Figure 1 Schematic diagram of different patterns of MASK design for the preparation method of low flash point and high anti-glare AG glass based on MASK design; DETAILED DESCRIPTION

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0025] Example 1

[0026] See also Figures 1-2 A method for preparing low-flash-point and high-anti-glare AG glass based on MASK design includes the following steps: 1) glass substrate processing; 2) functional coating plating; 3) photoresist coating; 4) MASK pattern design and exposure; 5) development; 6) etching; 7) photoresist removal; 8) acid etching of the glass substrate; 9) functional layer removal; 10) post-processing.

[0027] In step 1) above, deionized water is first used for preliminary rinsing, and dust and organic impurities on the surface of the substrate are removed by a soft brush or ultrasonic means; a low-concentration detergent or solvent is added for degreasing and deoiling; the treatment temperature range is 20-100°C, and the treatment time is 1-10 minutes.

[0028] In the above step 2), a layer of functional material, including silicate or polymer, is coated on the surface of the glass substrate by spin coating, dip coating, spray coating or plating; the material selection includes ITO, Cr, Mo, SiO2 or Si3N4; the coating thickness ranges from 0.01 to 30 μm; the film layer is prepared by vacuum coating or evaporation technology, including but not limited to physical vapor deposition, chemical vapor deposition and sputtering of functional coatings.

[0029] In step 3) above, a positive or negative photoresist is selected according to the process requirements, with a thickness controlled within the range of 0.01-30 μm. The slit coating method is used, the speed is controlled within the range of 10-200 mm / s, and the spray pressure is 0.03-0.98 MPa. After coating, a soft bake treatment is performed at 50-200°C for 30-300 seconds to remove the solvent. After coating, a soft bake treatment is performed at a temperature range of 50-250°C for a time of 1-10 minutes.

[0030] In step 4) above, the designed MASK graphic forms include but are not limited to:

[0031] 1) Regular arrangement: including the formation of orthogonal arrays - such as rectangular grids, hexagonal close-packed - honeycomb-like, or other periodic or quasi-periodic arrangements;

[0032] 2) Irregular arrangement: including random distribution, pseudo-random distribution, or arrangement according to a specific spatial distribution function - including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution and other probability density functions, or a combination thereof;

[0033] 3) Combination arrangement: basic units of various shapes or sizes are mixed and arranged in a regular or irregular manner as described above;

[0034] 4) Specific structural arrangement: including the formation of fractal structures, gradient distribution structures - gradual changes in unit density or size, or other arrangements with specific spatial correlations.

[0035] In step 4), during the exposure process, contact, proximity, or projection exposure equipment is selected based on the batch production method and pattern resolution requirements; the exposure energy is set at 50-500 mJ / cm 2 The alignment error is determined by the photosensitivity of the photoresist used, the wavelength of the light source and the required resolution. Common light source wavelengths include i-line-365nm, h-line-405nm and g-line-436nm. For situations where multi-layer structure exposure is required, the double-sided alignment system is used to control the alignment error within ±0.5-1 μm.

[0036] In step 5) above, a developer is used to selectively remove the photoresist and reproduce the mask pattern under precisely controlled conditions of a temperature of 20-30°C and a time of 30-90 seconds. The development is performed by immersion or spraying. After completion, the substrate is rinsed with deionized water, dried, and post-baked at an appropriate temperature of 50-300°C.

[0037] In step 6) above, the photoresist pattern is cured: thermal curing or UV curing at 50-500°C for 1-60 minutes; a matching chemical etchant is selected for the specific functional coating, and wet etching is performed under controlled concentration and time conditions; the etching process is monitored; after the reaction is completed, it is thoroughly cleaned and dried; and finally, a patterned functional thin film layer is obtained, which serves as a mask for subsequent glass etching.

[0038] In step 8) above, after removing the photoresist, the functional layer pattern previously protected by the photoresist is exposed, and the patterned functional layer will now serve as an etching mask; the glass substrate with the patterned functional layer mask is immersed in or exposed to a wet etching solution to selectively etch the exposed glass substrate area; the wet etching solution is an acidic solution, a monobasic or polybasic acid containing fluorine, or a buffered oxide etching solution, or a mixed solution of other acids or additives.

[0039] In step 7), the remaining photoresist from the previous process must be completely removed to obtain the desired microstructure pattern. This stripping process is accomplished using wet chemical treatment or dry plasma etching. This operation takes 1-15 minutes. After this step, the substrate surface is clean and free of residue.

[0040] In step 9) above, the functional coating is removed by wet chemical etching; the corresponding etchant is selected according to the coating material; the etching is carried out in a tank or horizontal etcher, and the process conditions are controlled, including the solution temperature: 20-50°C and the etching time; the etching time is determined according to the thickness, material and etching rate until the coating is completely dissolved; in step 10) above, the surface of the microstructure is functionalized, and the methods used include fluorination treatment and other chemical modification pathways; the treatment temperature is maintained at 20-100°C, and the treatment time is controlled at 1-60 minutes.

[0041] 1. Collaborative optimization parameter system

[0042] The key characteristic is not an isolated parameter range, but rather the three major design degrees of freedom: aperture (feature size), period (spatial frequency / density), and arrangement (spatial layout + unit morphology) acting as an interconnected, synergistic system. This invention recognizes that optimizing a single parameter cannot resolve complex optical performance conflicts (such as AG vs. flash point vs. transmittance). The target effect can only be achieved through the coupled design and optimization of these three systems.

[0043] The design parameters of aperture, period, and arrangement are collaboratively selected and optimized based on preset optical goals (low flash point, high anti-glare, etc.), and their numerical or type combinations fall within the optimization space disclosed in the present invention (aperture 3-50μm, period 15-100μm, and the diversified arrangements / shapes described below).

[0044] 2. Non-uniform and multimodal size distribution control

[0045] Breaking through traditional simplistic assumptions (such as a single size or uniform distribution), the statistical distribution of microstructure size itself is a key factor in regulating light scattering behavior (especially flash point suppression). This invention elevates size distribution from a "natural result" or "simple setting" to an object that can be actively engineered.

[0046] The MASK pattern or the resulting microstructure has a characteristic size (such as pore size) in the main range of 3-50 μm and exhibits a predetermined, non-uniform statistical distribution feature.

[0047] This includes but is not limited to:

[0048] (a) Segmented proportion control: For example, clearly define the proportion of small, medium and large size ranges (for example, 25-30% / 45-55% / 20-25%).

[0049] (b) Specific proportion structure: For example, the proportions of adjacent intervals present a specific symmetrical or asymmetrical proportion relationship (for example, 3:4:5:4:3).

[0050] (c) Multimodal distribution based on mathematical functions: This patent primarily uses segmentation / ratio descriptions, but its effect is equivalent to or can be approximated by a specific multimodal (e.g., bimodal or trimodal) probability density function. The protection point should cover this size distribution described by a specific statistical function (whose parameters are controllable).

[0051] 3: A very rich library of basic unit morphologies

[0052] This paper breaks through the limitations of using circles or simple polygons and recognizes that the unit shape itself has an important modulation effect on the direction and intensity of light scattering. By introducing a rich library of shapes and their combinations, the possibilities of optical design are greatly expanded.

[0053] The shape of the basic unit of the MASK pattern or the resulting microstructure is selected from an extremely wide range of shapes, including: regular geometric shapes (circles, ellipses, polygons with various numbers of sides / shapes, stars, rings, arcs), linear shapes (line segments, curves), dotted shapes, and key: irregular shapes, amorphous shapes, free-form shapes, and any combination or derivative of all the above shapes.

[0054] 4: Tunability of statistical parameters and performance mapping

[0055] Innovation manifests itself in: Converting the complex optical performance optimization problem into a relatively simple mathematical model parameter adjustment problem, greatly improving the predictability of design, the controllability of process, and the flexibility and efficiency of product customization.

[0056] Optical performance control method based on distributed parameters

[0057] This invention provides an indirect, yet more effective and predictable, means of regulating optical properties. Rather than adjusting individual microstructures one by one, it achieves fine-tuning of macroscopic optical properties (flash point, haze, clarity, etc.) by adjusting key parameters of statistical models describing size distribution or spatial arrangement (e.g., mean and standard deviation of a normal distribution; peak position, peak width, and peak ratio of a bimodal distribution; and the lambda parameter of a Poisson distribution).

[0058] AG glass is manufactured by modifying one or more key parameters (such as peak position, distribution width / standard deviation, peak spacing, peak height ratio, distribution function type, etc.) of the statistical distribution function (applied to size or spatial arrangement) used in the MASK design.

[0059] 5: Integration of specific process and design concept

[0060] A mask with specific design features.

[0061] Essentially, the method integrates the unique mask design concepts (co-optimization, size distribution engineering, advanced alignment patterns, and statistical parameter control) into the specific lithography manufacturing process (steps A through I). The holistic nature of the method—how this advanced design is achieved using specific process steps—is the key to its preservation.

[0062] The process includes cleaning, coating a functional layer (specific materials such as ITO, Cr, Mo, SiO2, Si3N4, etc.), applying photoresist, exposing using a mask designed based on any one or a combination of the above, developing, etching the functional layer (using a specific etchant), stripping, removing the functional layer (using specific etchants and conditions), and optional post-processing (such as fluorination). Emphasis is placed on the combination of specific mask design and process steps.

[0063] 6: MASK mask with specific design features

[0064] The physical tool that carries the above innovative design concept - the MASK mask itself.

[0065] A MASK mask for manufacturing AG glass, comprising light-transmitting or light-opaque pattern areas that meet any one or more of the above-defined characteristics in terms of the statistical distribution of feature sizes, the spatial arrangement pattern of features (including periodicity, quasi-periodicity, based on statistical functions, randomness, etc.), and the shape of basic units.

[0066] Technical issues solved:

[0067] 1. Flash point control issues

[0068] Traditional AG glass is prone to flash points, manifesting as noticeable light spots on the glass surface under strong light. This phenomenon stems from the randomness and unevenness of the surface microstructure, which causes irregular scattering of incident light. Flash points are particularly prominent in high-brightness display applications, severely impacting the display quality and user experience. This invention achieves precise control of the surface topography by precisely controlling the design parameters of the mask, including the size, spacing, and arrangement of the microstructures, effectively suppressing the flash point phenomenon.

[0069] 2. Anti-glare performance issues

[0070] Existing AG glass suffers from a significant technical conflict between its anti-glare performance and light transmittance. The surface microstructure formed using traditional processes has limited scattering ability for incident light, and the scattering direction is difficult to control, significantly reducing the readability of displayed content in bright light environments. This invention utilizes a specific mask design scheme, optimizing the geometric features and distribution of the microstructure to significantly improve anti-glare performance while maintaining good light transmittance, achieving an optimal balance of optical properties.

[0071] 3. Process stability issues

[0072] The traditional AG glass preparation process has significant stability issues: poor consistency between product batches, significant differences in optical properties between different areas of the same glass, and difficulty in accurately controlling preparation parameters. These issues seriously affect product yield and restrict large-scale production. The present invention achieves precise control of process parameters and stable output of product performance by adopting a preparation method based on MASK design. This method not only improves the consistency of product quality, but also allows flexible adjustment of process parameters according to the requirements of different application scenarios, providing reliable technical support for the industrial production of AG glass.

[0073] By addressing the aforementioned technical issues, this invention achieves a significant breakthrough in the field of AG glass preparation, providing a high-quality optical solution for high-performance display devices. The innovation of this technology is not only reflected in improved performance indicators, but also lays a solid technical foundation for the large-scale application of AG glass.

[0074] In MASK graphic design, high-precision MASK is used for graphic design and exposure. This step uses a proximity or projection exposure machine to accurately transfer the designed microstructure pattern to the photoresist layer through MASK technology. The design of MASK is flexible and adjustable. According to different application requirements, the following distribution methods can be selected: normal distribution is suitable for conventional anti-glare scenarios, which is conducive to obtaining a more uniform scattering effect; exponential distribution adjusts the microstructure density in a gradual manner to achieve optical effects in a specific direction; bimodal distribution sets the number peaks in different aperture ranges to meet the needs of composite optical performance; Poisson distribution can simulate the natural random distribution characteristics and enhance the randomness of light scattering. The MASK microstructure distribution methods include but are not limited to normal distribution, exponential distribution, bimodal distribution, and Poisson distribution. In addition, MASK can also realize complex pattern designs, such as different microstructure layouts such as circles, honeycombs, arrays, and polygons, thereby optimizing anti-glare effects and light scattering performance.

[0075] The core of the present invention is to achieve precise control of the surface microstructure of AG glass through MASK design. The design of MASK mainly includes three key parameters: aperture, period and arrangement. Among them, the design range of aperture is 3-50μm. Within this range, the proportion of apertures of different sizes can adopt a variety of distribution schemes, such as uniform distribution, gradient distribution, segmented distribution or specific proportion distribution, etc., and the distribution method can also be optimized and adjusted according to actual needs. By controlling the aperture size and its distribution characteristics, the basic characteristics of the microstructure can be adjusted, thereby affecting the optical performance of the product. The design range of the period parameter is 15-100μm. By optimizing the period, precise control of the microstructure density can be achieved, thereby adjusting the scattering characteristics of light (such as Figure 1 As shown). In terms of pattern design, the present invention adopts a specific design scheme, characterized in that the pattern is composed of a plurality of basic units, the shapes of which include but are not limited to basic two-dimensional geometric figures, such as circles, ellipses, polygons (such as triangles, quadrilaterals, pentagons, hexagons, or polygons with other numbers of sides), stars, rings, arcs, line segments, or points; they may also be combinations or derivatives of the above basic geometric figures; they may also be irregular, amorphous, or free-form geometric figures.

[0076] The arrangements of these basic units include but are not limited to:

[0077] 1. Regular arrangement: for example, forming an orthogonal array (such as a rectangular grid), a hexagonal close arrangement (honeycomb-like), or other periodic or quasi-periodic arrangement.

[0078] 2. Irregular arrangement: for example, random distribution, pseudo-random distribution, or arrangement according to a specific spatial distribution function (including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution and other probability density functions, or a combination thereof).

[0079] 3. Combination arrangement: It contains basic units of various shapes or sizes, which are mixed and arranged in the above regular or irregular manner.

[0080] 4. Specific structural arrangement: for example, forming a fractal structure, a gradient distribution structure (gradient of unit density or size), or other arrangements with specific spatial correlation.

[0081] The above design scheme adjusts the light scattering characteristics through the combination of the shape and arrangement of the basic units, provides a uniform light scattering effect, and effectively suppresses the flash point phenomenon. (such as Figure 2 shown).

[0082] To ensure process reliability and repeatability, this paper establishes a systematic parameter optimization method. Using a scientific experimental design approach, the mask design parameters are optimized. First, the target performance indicators for the product are determined. Then, a reasonable experimental plan is designed to systematically evaluate the impact of each parameter on performance. Finally, the optimal parameter combination is determined through analysis of the experimental results.

[0083] The technical solution of this invention achieves precise control of the surface microstructure of AG glass by precisely controlling mask design parameters, optimizing the preparation process, and establishing a systematic parameter optimization method. This solution not only solves the flash point problem of traditional AG glass and improves its anti-glare performance, but also significantly enhances the stability and controllability of the process, providing reliable technical support for the large-scale production of high-performance AG glass.

[0084] In terms of performance, the present invention significantly improves the optical performance of AG glass. Through the precise control of MASK technology, especially the use of diversified aperture distribution schemes, such as uniform distribution, segmented distribution or specific proportion distribution, the product has made important breakthroughs in anti-glare performance and flash point control. The reasonable combination of apertures of different sizes ensures the uniformity and stability of light scattering. Test results show that under the same haze conditions, the flash point value of the AG glass of the present invention is reduced by more than 30% compared with traditional products, and the transmittance is only reduced by less than 5%, achieving an optimized balance of optical performance. The uniformity and consistency of the microstructure ensure that the product has a more stable light scattering effect.

[0085] In terms of process implementation and optimization, the present invention discloses an effective way to guide MASK design through statistical methods. Specifically, the use of a specific probability density function or spatial distribution model (including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution or a combination thereof) to define a certain feature of the basic unit on the MASK (such as the distribution ratio of the aperture size) or its spatial arrangement law is one of the key strategies to achieve the target optical performance. This design based on statistical distribution not only ensures the optimization of the light scattering characteristics, but also by decomposing the complex overall effect into the regulation of the key parameters of the distribution function (such as peak position, distribution width / morphology), it can relatively simplify the complexity of the MASK pattern design required to achieve specific complex optical goals while ensuring high performance or improve the process window. More importantly, this method allows the optical properties of the final product to be finely and predictably adjusted by adjusting these statistical parameters, thereby greatly enhancing the controllability of the manufacturing process and significantly improving the consistency of performance between product batches. Through the application of MASK technology, the performance fluctuation of the same batch of products is controlled within ±5%, which is better than the ±15% fluctuation range of the traditional process. In addition, the process route is simple and clear, suitable for large-scale production, and has good prospects for industrial application.

[0086] In terms of application value, this invention provides a high-quality optical solution for high-end display devices. This technology is not only applicable to traditional LCD displays but also offers unique advantages in the field of OLED displays. By adjusting the mask design parameters, performance can be customized to meet the application requirements of various fields, from consumer electronics to professional display devices. In particular, in fields with high optical performance requirements, such as outdoor displays and medical displays, the products of this invention demonstrate significant technical advantages.

[0087] In summary, this invention has achieved significant results in terms of performance improvement, process advantages, and application value, providing an innovative solution for the development of AG glass technology. The widespread application of this technology will provide strong support for the upgrading and development of the display industry, and has significant practical value and market prospects.

[0088] By adopting the above solution, the surface microstructure of AG glass can be precisely controlled by precisely controlling the key parameters of the mask. The core of this method is to optimize the aperture (3-50μm), period (15-100μm), and arrangement of the mask, focusing on solving the technical difficulties of traditional AG glass in terms of anti-glare performance and flash point control.

[0089] Example 2

[0090] See also Figures 1-2 A method for preparing low-flash-point and high-anti-glare AG glass based on MASK design comprises the following steps:

[0091] AGlass Substrate Processing

[0092] First, perform a preliminary rinse with deionized water. Use a soft brush or ultrasonic method to remove dust and organic impurities from the substrate surface. If necessary, add a low-concentration detergent or solvent for degreasing and deoiling. The treatment temperature range is 20-100°C, and the treatment time is 1-10 minutes.

[0093] B. Functional coating

[0094] A layer of functional material (such as silicate or polymer) is coated on the surface of the glass substrate by spin coating, dip coating, spray coating, or plating. Material options may include ITO (indium tin oxide), Cr (chromium), Mo (molybdenum), SiO2 (silicon dioxide), and Si3N4 (silicon nitride). The coating thickness ranges from 0.01 to 30 μm. The film layer is mainly prepared by vacuum coating or evaporation technology, including but not limited to physical vapor deposition (PVD), chemical vapor deposition (CVD), and sputtering of functional coatings.

[0095] C. Coating photoresist

[0096] Depending on the process requirements, positive or negative photoresist can be used, with a thickness controlled between 0.01-30μm to ensure pattern transfer accuracy. Slit coating is used, suitable for large glass surfaces, with a controlled speed of 10-200mm / s and a spray pressure of 0.03-0.98MPa. After coating, a soft bake (50-200°C, 30-300s) is performed to remove solvents and enhance adhesive layer adhesion and stability. After coating, a soft bake is performed at a temperature range of 50-250°C for 1-10 minutes.

[0097] D.MASK graphic design and exposure

[0098] In this step, the mask pattern is designed based on the pattern design principles described in the present invention (such as the selection of geometric form, size, and spatial arrangement as detailed above) and the target optical properties (such as low flash point and high anti-glare). During the exposure process, contact, proximity, or projection exposure equipment should be selected based on the batch production method and pattern resolution requirements. The exposure energy is usually set at 50-500mJ / cm 2 The wavelength of the light source is determined by the photosensitivity of the photoresist used, the wavelength of the light source, and the required resolution. Common light source wavelengths include i-line (365nm), h-line (405nm), and g-line (436nm). The specific wavelength should be selected based on the application scenario and the compatibility of the photoresist. For applications requiring multi-layer structure exposure, a double-sided alignment system can be used to control the alignment error within ±0.5-1μm, ensuring precise overlap between patterns.

[0099] E. Development

[0100] Using a developer of appropriate concentration and type (such as TMAH tetramethylammonium hydroxide or potassium hydroxide (KOH) solution), development is performed under precisely controlled temperature (20-30°C), time (30-90 seconds), and other conditions to selectively remove the photoresist and accurately reproduce the mask pattern. Development can be performed by immersion or spraying. After completion, the substrate is rinsed with deionized water, dried, and optionally post-baked at an appropriate temperature (50-300°C) to enhance the stability and corrosion resistance of the photoresist pattern.

[0101] F. Etching

[0102] The photoresist pattern can be optionally cured (50-500°C thermal curing or UV curing, 1-60 minutes) to enhance its corrosion resistance. For specific functional coatings (such as ITO, Cr, Mo, SiO2, Si3N4, etc.), matching chemical etchants are selected (for example, nitric acid / hydrochloric acid-based, hydrofluoric acid-based, phosphoric acid-based solutions, respectively), and wet etching is performed under controlled concentration (such as in the range of 1-30%) and time conditions. The etching process needs to be monitored to ensure accurate pattern transfer and prevent over-etching. After the reaction is completed, thorough cleaning and drying are performed. Finally, a patterned functional thin film layer is obtained, which serves as a mask for subsequent glass etching.

[0103] G. Remove photoresist

[0104] To achieve the desired microstructure pattern, any remaining photoresist from previous processes must be completely removed. This stripping process can be accomplished using either wet chemical treatment or dry plasma etching. Typically, this operation takes between 1 and 15 minutes. After this step, the substrate surface should be clean and free of residue, providing ideal conditions for subsequent processing or handling.

[0105] H. Acid etching of glass substrate

[0106] After removing the photoresist, the functional layer pattern previously protected by the photoresist is exposed, and now the patterned functional layer will serve as an etching mask. The glass substrate with the patterned functional layer mask is immersed in or contacted with a wet etching solution, and the exposed glass substrate area is selectively etched. The wet etching solution is generally an acidic solution, which can be a monobasic or polybasic acid containing fluorine, or a buffered oxide etching solution, or a mixed solution of other acids (such as nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, etc.) or additives. The key parameters of the etching process, such as the components and concentration of the etching solution, the etching temperature, and the etching time, need to be accurately controlled according to the etching resistance of the functional layer mask and the microstructure depth and morphology desired to be formed.

[0107] I. Functional layer removal

[0108] Functional coatings are removed by wet chemical etching. Depending on the coating material (e.g., ITO, Cr, Mo, SiO2, Si3N4), the appropriate etchant (a specific concentration of nitric acid / hydrochloric acid-based, HF-based, or phosphoric acid-based solution, typically ranging from 1-30%), must be selected. This process can be performed in a tank or horizontal etcher. The key lies in precisely controlling the process conditions, particularly the solution temperature (20-50°C) and the etching time. The latter is determined based on the thickness, material, and etching rate, until the coating is completely dissolved.

[0109] J. Post-processing

[0110] This step involves functionalizing the microstructured surface to achieve anti-glare properties. Specific methods include fluorination and other chemical modification pathways. The treatment temperature is maintained between 20-100°C and the treatment time is controlled between 1 and 60 minutes.

[0111] Significant technical effects:

[0112] In terms of performance, the present invention significantly improves the optical performance of AG glass. Through the precise control of MASK technology, especially the use of diversified aperture distribution schemes, such as uniform distribution, segmented distribution or specific proportion distribution, the product has made important breakthroughs in anti-glare performance and flash point control. The reasonable combination of apertures of different sizes ensures the uniformity and stability of light scattering. Test results show that under the same haze conditions, the flash point value of the AG glass of the present invention is reduced by more than 30% compared with traditional products, and the transmittance is only reduced by less than 5%, achieving an optimized balance of optical performance. The uniformity and consistency of the microstructure ensure that the product has a more stable light scattering effect.

[0113] In terms of process implementation and optimization, the present invention discloses an effective way to guide MASK design through statistical methods. Specifically, the use of a specific probability density function or spatial distribution model (including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution or a combination thereof) to define a certain feature of the basic unit on the MASK (such as the distribution ratio of the aperture size) or its spatial arrangement law is one of the key strategies to achieve the target optical performance. This design based on statistical distribution not only ensures the optimization of the light scattering characteristics, but also by decomposing the complex overall effect into the regulation of the key parameters of the distribution function (such as peak position, distribution width / morphology), it can relatively simplify the complexity of the MASK pattern design required to achieve specific complex optical goals while ensuring high performance or improve the process window. More importantly, this method allows the optical properties of the final product to be finely and predictably adjusted by adjusting these statistical parameters, thereby greatly enhancing the controllability of the manufacturing process and significantly improving the consistency of performance between product batches. Through the application of MASK technology, the performance fluctuation of the same batch of products is controlled within ±5%, which is better than the ±15% fluctuation range of the traditional process. In addition, the process route is simple and clear, suitable for large-scale production, and has good prospects for industrial application.

[0114] In terms of application value, this invention provides a high-quality optical solution for high-end display devices. This technology is not only applicable to traditional LCD displays but also offers unique advantages in the field of OLED displays. By adjusting the mask design parameters, performance can be customized to meet the application requirements of various fields, from consumer electronics to professional display devices. In particular, in fields with high optical performance requirements, such as outdoor displays and medical displays, the products of this invention demonstrate significant technical advantages.

[0115] In summary, this invention has achieved significant results in terms of performance improvement, process advantages, and application value, providing an innovative solution for the development of AG glass technology. The widespread application of this technology will provide strong support for the upgrading and development of the display industry, and has significant practical value and market prospects.

[0116] 1. Collaborative optimization parameter system

[0117] The key characteristic is not an isolated parameter range, but rather the three major design degrees of freedom: aperture (feature size), period (spatial frequency / density), and arrangement (spatial layout + unit morphology) acting as an interconnected, synergistic system. This invention recognizes that optimizing a single parameter cannot resolve complex optical performance conflicts (such as AG vs. flash point vs. transmittance). The target effect can only be achieved through the coupled design and optimization of these three systems.

[0118] The design parameters of aperture, period, and arrangement are collaboratively selected and optimized based on preset optical goals (low flash point, high anti-glare, etc.), and their numerical or type combinations fall within the optimization space disclosed in the present invention (aperture 3-50μm, period 15-100μm, and the diversified arrangements / shapes described below).

[0119] 2. Non-uniform and multimodal size distribution control

[0120] Breaking through traditional simplistic assumptions (such as a single size or uniform distribution), the statistical distribution of microstructure size itself is a key factor in regulating light scattering behavior (especially flash point suppression). This invention elevates size distribution from a "natural result" or "simple setting" to an object that can be actively engineered.

[0121] The MASK pattern or the resulting microstructure has a characteristic size (such as pore size) in the main range of 3-50 μm and exhibits a predetermined, non-uniform statistical distribution feature.

[0122] This includes but is not limited to:

[0123] (a) Segmented proportion control: For example, clearly define the proportion of small, medium and large size ranges (for example, 25-30% / 45-55% / 20-25%).

[0124] (b) Specific proportion structure: For example, the proportions of adjacent intervals present a specific symmetrical or asymmetrical proportion relationship (for example, 3:4:5:4:3).

[0125] (c) Multimodal distribution based on mathematical functions: This patent primarily uses segmentation / ratio descriptions, but its effect is equivalent to or can be approximated by a specific multimodal (e.g., bimodal or trimodal) probability density function. The protection point should cover this size distribution described by a specific statistical function (whose parameters are controllable).

[0126] 3: A very rich library of basic unit morphologies

[0127] This paper breaks through the limitations of using circles or simple polygons and recognizes that the unit shape itself has an important modulation effect on the direction and intensity of light scattering. By introducing a rich library of shapes and their combinations, the possibilities of optical design are greatly expanded.

[0128] The shape of the basic unit of the MASK pattern or the resulting microstructure is selected from an extremely wide range of shapes, including: regular geometric shapes (circles, ellipses, polygons with various numbers of sides / shapes, stars, rings, arcs), linear shapes (line segments, curves), dotted shapes, and key: irregular shapes, amorphous shapes, free-form shapes, and any combination or derivative of all the above shapes.

[0129] 4: Tunability of statistical parameters and performance mapping

[0130] Innovation manifests itself in: Converting the complex optical performance optimization problem into a relatively simple mathematical model parameter adjustment problem, greatly improving the predictability of design, the controllability of process, and the flexibility and efficiency of product customization.

[0131] Optical performance control method based on distributed parameters

[0132] This invention provides an indirect, yet more effective and predictable, means of regulating optical properties. Rather than adjusting individual microstructures one by one, it achieves fine-tuning of macroscopic optical properties (flash point, haze, clarity, etc.) by adjusting key parameters of statistical models describing size distribution or spatial arrangement (e.g., mean and standard deviation of a normal distribution; peak position, peak width, and peak ratio of a bimodal distribution; and the lambda parameter of a Poisson distribution).

[0133] AG glass is manufactured by modifying one or more key parameters (such as peak position, distribution width / standard deviation, peak spacing, peak height ratio, distribution function type, etc.) of the statistical distribution function (applied to size or spatial arrangement) used in the MASK design.

[0134] 5: Integration of specific process and design concept

[0135] A mask with specific design features.

[0136] Essentially, the method integrates the unique mask design concepts (co-optimization, size distribution engineering, advanced alignment patterns, and statistical parameter control) into the specific lithography manufacturing process (steps A through I). The holistic nature of the method—how this advanced design is achieved using specific process steps—is the key to its preservation.

[0137] The process includes cleaning, coating a functional layer (specific materials such as ITO, Cr, Mo, SiO2, Si3N4, etc.), applying photoresist, exposing using a mask designed based on any one or a combination of the above, developing, etching the functional layer (using a specific etchant), stripping, removing the functional layer (using specific etchants and conditions), and optional post-processing (such as fluorination). Emphasis is placed on the combination of specific mask design and process steps.

[0138] 6: MASK mask with specific design features

[0139] The physical tool that carries the above innovative design concept - the MASK mask itself.

[0140] A MASK mask for manufacturing AG glass, comprising light-transmitting or light-opaque pattern areas that meet any one or more of the above-defined characteristics in terms of the statistical distribution of feature sizes, the spatial arrangement pattern of features (including periodicity, quasi-periodicity, based on statistical functions, randomness, etc.), and the shape of basic units.

[0141] Technical issues solved:

[0142] 1. Flash point control issues

[0143] Traditional AG glass is prone to flash points, manifesting as noticeable light spots on the glass surface under strong light. This phenomenon stems from the randomness and unevenness of the surface microstructure, which causes irregular scattering of incident light. Flash points are particularly prominent in high-brightness display applications, severely impacting the display quality and user experience. This invention achieves precise control of the surface topography by precisely controlling the design parameters of the mask, including the size, spacing, and arrangement of the microstructures, effectively suppressing the flash point phenomenon.

[0144] 2. Anti-glare performance issues

[0145] Existing AG glass suffers from a significant technical conflict between its anti-glare performance and light transmittance. The surface microstructure formed using traditional processes has limited scattering ability for incident light, and the scattering direction is difficult to control, significantly reducing the readability of displayed content in bright light environments. This invention utilizes a specific mask design scheme, optimizing the geometric features and distribution of the microstructure to significantly improve anti-glare performance while maintaining good light transmittance, achieving an optimal balance of optical properties.

[0146] 3. Process stability issues

[0147] The traditional AG glass preparation process has significant stability issues: poor consistency between product batches, significant differences in optical properties between different areas of the same glass, and difficulty in accurately controlling preparation parameters. These issues seriously affect product yield and restrict large-scale production. The present invention achieves precise control of process parameters and stable output of product performance by adopting a preparation method based on MASK design. This method not only improves the consistency of product quality, but also allows flexible adjustment of process parameters according to the requirements of different application scenarios, providing reliable technical support for the industrial production of AG glass.

[0148] By addressing the aforementioned technical issues, this invention achieves a significant breakthrough in the field of AG glass preparation, providing a high-quality optical solution for high-performance display devices. The innovation of this technology is not only reflected in improved performance indicators, but also lays a solid technical foundation for the large-scale application of AG glass.

[0149] In MASK graphic design, high-precision MASK is used for graphic design and exposure. This step uses a proximity or projection exposure machine to accurately transfer the designed microstructure pattern to the photoresist layer through MASK technology. The design of MASK is flexible and adjustable. According to different application requirements, the following distribution methods can be selected: normal distribution is suitable for conventional anti-glare scenarios, which is conducive to obtaining a more uniform scattering effect; exponential distribution adjusts the microstructure density in a gradual manner to achieve optical effects in a specific direction; bimodal distribution sets the number peaks in different aperture ranges to meet the needs of composite optical performance; Poisson distribution can simulate the natural random distribution characteristics and enhance the randomness of light scattering. The MASK microstructure distribution methods include but are not limited to normal distribution, exponential distribution, bimodal distribution, and Poisson distribution. In addition, MASK can also realize complex pattern designs, such as different microstructure layouts such as circles, honeycombs, arrays, and polygons, thereby optimizing anti-glare effects and light scattering performance.

[0150] The core of the present invention is to achieve precise control of the surface microstructure of AG glass through MASK design. The design of MASK mainly includes three key parameters: aperture, period and arrangement. Among them, the design range of aperture is 3-50μm. Within this range, the proportion of apertures of different sizes can adopt a variety of distribution schemes, such as uniform distribution, gradient distribution, segmented distribution or specific proportion distribution, etc., and the distribution method can also be optimized and adjusted according to actual needs. By controlling the aperture size and its distribution characteristics, the basic characteristics of the microstructure can be adjusted, thereby affecting the optical performance of the product. The design range of the period parameter is 15-100μm. By optimizing the period, precise control of the microstructure density can be achieved, thereby adjusting the scattering characteristics of light (such as Figure 1 As shown). In terms of pattern design, the present invention adopts a specific design scheme, characterized in that the pattern is composed of a plurality of basic units, the shapes of which include but are not limited to basic two-dimensional geometric figures, such as circles, ellipses, polygons (such as triangles, quadrilaterals, pentagons, hexagons, or polygons with other numbers of sides), stars, rings, arcs, line segments, or points; they may also be combinations or derivatives of the above basic geometric figures; they may also be irregular, amorphous, or free-form geometric figures.

[0151] The arrangements of these basic units include but are not limited to:

[0152] 1. Regular arrangement: for example, forming an orthogonal array (such as a rectangular grid), a hexagonal close arrangement (honeycomb-like), or other periodic or quasi-periodic arrangement.

[0153] 2. Irregular arrangement: for example, random distribution, pseudo-random distribution, or arrangement according to a specific spatial distribution function (including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution and other probability density functions, or a combination thereof).

[0154] 3. Combination arrangement: It contains basic units of various shapes or sizes, which are mixed and arranged in the above regular or irregular manner.

[0155] 4. Specific structural arrangement: for example, forming a fractal structure, a gradient distribution structure (gradient of unit density or size), or other arrangements with specific spatial correlation.

[0156] The above design scheme adjusts the light scattering characteristics through the combination of the shape and arrangement of the basic units, provides a uniform light scattering effect, and effectively suppresses the flash point phenomenon. (such as Figure 2 shown).

[0157] To ensure process reliability and repeatability, this paper establishes a systematic parameter optimization method. Using a scientific experimental design approach, the mask design parameters are optimized. First, the target performance indicators for the product are determined. Then, a reasonable experimental plan is designed to systematically evaluate the impact of each parameter on performance. Finally, the optimal parameter combination is determined through analysis of the experimental results.

[0158] The technical solution of this invention achieves precise control of the surface microstructure of AG glass by precisely controlling mask design parameters, optimizing the preparation process, and establishing a systematic parameter optimization method. This solution not only solves the flash point problem of traditional AG glass and improves its anti-glare performance, but also significantly enhances the stability and controllability of the process, providing reliable technical support for the large-scale production of high-performance AG glass.

[0159] In terms of performance, the present invention significantly improves the optical performance of AG glass. Through the precise control of MASK technology, especially the use of diversified aperture distribution schemes, such as uniform distribution, segmented distribution or specific proportion distribution, the product has made important breakthroughs in anti-glare performance and flash point control. The reasonable combination of apertures of different sizes ensures the uniformity and stability of light scattering. Test results show that under the same haze conditions, the flash point value of the AG glass of the present invention is reduced by more than 30% compared with traditional products, and the transmittance is only reduced by less than 5%, achieving an optimized balance of optical performance. The uniformity and consistency of the microstructure ensure that the product has a more stable light scattering effect.

[0160] In terms of process implementation and optimization, the present invention discloses an effective way to guide MASK design through statistical methods. Specifically, the use of a specific probability density function or spatial distribution model (including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution or a combination thereof) to define a certain feature of the basic unit on the MASK (such as the distribution ratio of the aperture size) or its spatial arrangement law is one of the key strategies to achieve the target optical performance. This design based on statistical distribution not only ensures the optimization of the light scattering characteristics, but also by decomposing the complex overall effect into the regulation of the key parameters of the distribution function (such as peak position, distribution width / morphology), it can relatively simplify the complexity of the MASK pattern design required to achieve specific complex optical goals while ensuring high performance or improve the process window. More importantly, this method allows the optical properties of the final product to be finely and predictably adjusted by adjusting these statistical parameters, thereby greatly enhancing the controllability of the manufacturing process and significantly improving the consistency of performance between product batches. Through the application of MASK technology, the performance fluctuation of the same batch of products is controlled within ±5%, which is better than the ±15% fluctuation range of the traditional process. In addition, the process route is simple and clear, suitable for large-scale production, and has good prospects for industrial application.

[0161] In terms of application value, this invention provides a high-quality optical solution for high-end display devices. This technology is not only applicable to traditional LCD displays but also offers unique advantages in the field of OLED displays. By adjusting the mask design parameters, performance can be customized to meet the application requirements of various fields, from consumer electronics to professional display devices. In particular, in fields with high optical performance requirements, such as outdoor displays and medical displays, the products of this invention demonstrate significant technical advantages.

[0162] In summary, this invention has achieved significant results in terms of performance improvement, process advantages, and application value, providing an innovative solution for the development of AG glass technology. The widespread application of this technology will provide strong support for the upgrading and development of the display industry, and has significant practical value and market prospects.

[0163] By adopting the above solution, the surface microstructure of AG glass can be precisely controlled by precisely controlling the key parameters of the mask. The core of this method is to optimize the aperture (3-50μm), period (15-100μm), and arrangement of the mask, focusing on solving the technical difficulties of traditional AG glass in terms of anti-glare performance and flash point control.

[0164] In the description of the present invention, it should be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inside", "front", "center", "both ends", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0165] In the present invention, unless otherwise clearly stipulated and limited, the terms "install", "set", "connect", "fix", "screw" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. Unless otherwise clearly defined, ordinary technicians in this field can understand the specific meanings of the above terms in the present invention according to the specific circumstances.

[0166] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing low-flash-point and high-anti-glare AG glass based on MASK design, characterized in that: The method comprises the following steps: 1) processing the glass substrate; 2) plating a functional coating; 3) Coating photoresist; 4) Mask pattern design and exposure; 5) Development; 6) Etching; 7) Photoresist removal; 8) Acid etching of glass substrate; 9) Removal of functional layer; 10) Post-processing.

2. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 1, characterized in that: In step 1) above, deionized water is first used for preliminary rinsing, and dust and organic impurities on the surface of the substrate are removed by a soft brush or ultrasonic means; a low-concentration detergent or solvent is added for degreasing and deoiling; the treatment temperature range is 20-100°C, and the treatment time is 1-10 minutes.

3. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 2, characterized in that: In the above step 2), a layer of functional material, including silicate or polymer, is coated on the surface of the glass substrate by spin coating, dip coating, spray coating or plating; the material selection includes ITO, Cr, Mo, SiO2 or Si3N4; the coating thickness ranges from 0.01 to 30 μm; the film layer is prepared by vacuum coating or evaporation technology, including but not limited to physical vapor deposition, chemical vapor deposition and sputtering of functional coatings.

4. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 3, characterized in that: In step 3), a positive or negative photoresist is selected based on process requirements, with a thickness of 0.01-30 μm. Slit-type coating is used at a speed of 10-200 mm / s and a spray pressure of 0.03-0.98 MPa. After coating, a soft bake is performed at 50-200°C for 30-300 seconds to remove the solvent. After coating, soft baking treatment is carried out at a temperature range of 50-250°C and a soft baking time of 1-10 minutes.

5. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 4, characterized in that: In step 4) above, the designed MASK graphic forms include but are not limited to: 1) Regular arrangement: including the formation of orthogonal arrays - such as rectangular grids, hexagonal close-packed - honeycomb-like, or other periodic or quasi-periodic arrangements; 2) Irregular arrangement: including random distribution, pseudo-random distribution, or arrangement according to a specific spatial distribution function - including but not limited to normal distribution, exponential distribution, bimodal distribution, Poisson distribution and other probability density functions, or a combination thereof; 3) Combination arrangement: basic units of various shapes or sizes are mixed and arranged in a regular or irregular manner as described above; 4) Specific structural arrangement: including the formation of fractal structures, gradient distribution structures - gradual changes in unit density or size, or other arrangements with specific spatial correlations.

6. The method for preparing low-flash-point, high-anti-glare AG glass based on MASK design according to claim 5, characterized in that: In step 4), during the exposure process, contact, proximity, or projection exposure equipment is selected based on the batch production method and pattern resolution requirements; the exposure energy is set at 50-500mJ / cm 2 The error is determined by the photosensitivity of the photoresist, the wavelength of the light source and the required resolution. Common light source wavelengths include i-line-365nm, h-line-405nm and g-line-436nm. For situations where multi-layer structure exposure is required, the double-sided alignment system is used to control the alignment error within ±0.5-1μm.

7. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 6, characterized in that: In the above step 5), a developer is used to perform a development process under precisely controlled conditions of a temperature of 20-30° C. and a time of 30-90 seconds to selectively remove the photoresist and reproduce the mask pattern; Development is carried out by immersion or spraying. After completion, the substrate is rinsed with deionized water, dried, and post-baked at an appropriate temperature: 50-300°C.

8. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 7, characterized in that: In step 6) above, the photoresist pattern is cured: thermal curing or UV curing at 50-500°C for 1-60 minutes; a matching chemical etchant is selected for the specific functional coating, and wet etching is performed under controlled concentration and time conditions; the etching process is monitored; after the reaction is completed, it is thoroughly cleaned and dried; and finally, a patterned functional thin film layer is obtained, which serves as a mask for subsequent glass etching.

9. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 8, characterized in that: In step 7), in order to finally obtain the desired microstructure pattern, the residual photoresist from the previous process needs to be completely removed; this stripping process is achieved by wet chemical treatment or dry plasma etching technology; the operation time required is controlled to be 1-15 minutes; After completing this step, the substrate surface is clean and free of residue; In step 8), after removing the photoresist, the functional layer pattern previously protected by the photoresist is exposed, and the patterned functional layer will serve as an etching mask; The glass substrate with the patterned functional layer mask is immersed in or exposed to a wet etching solution to selectively etch the exposed glass substrate area; the wet etching solution is an acidic solution, a monobasic or polybasic acid containing fluorine, or a buffered oxide etching solution, or a mixed solution of other acids or additives.

10. The method for preparing low-flash-point and high-anti-glare AG glass based on MASK design according to claim 9, characterized in that: In step 9), the functional coating is removed by wet chemical etching; an etchant is selected according to the coating material; the etching is performed in a tank or horizontal etching machine, and process conditions are controlled, including solution temperature (20-50°C) and etching time; The etching time is determined according to the thickness, material and etching rate, until the coating is completely dissolved; In the above step 10), functionalization treatment is applied to the surface of the microstructure, and the methods used include fluorination treatment and other chemical modification pathways; the treatment temperature is maintained at 20-100° C., and the treatment time is controlled at 1-60 min.

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