Carrier-injection-free light-emitting device structure based on double-gate regulation and control

Abstract

The invention discloses a carrier-injection-free light-emitting device structure based on double-gate regulation and control, and relates to the field of photoelectric display, and the device structure comprises a first gate regulation and control electrode, a first gate insulation layer, an injection-free light-emitting unit, a second gate insulation layer and a first gate regulation and control electrode, the injection-free light-emitting unit comprises a first electrode, a first dielectric layer, a light-emitting material layer, a second dielectric layer and a second electrode; when the device works, a first alternating-current power supply is applied to the first electrode and the second electrode, and the first alternating-current power supply is used for supplying power to the injection-free light-emitting unit to emit light; the first grid regulation electrode applies a first bias power supply relative to the first electrode, and the second grid regulation electrode applies a second bias power supply relative to the second electrode. According to the invention, through double-gate regulation and control, the luminance and the luminous efficiency of the device are effectively improved in two dimensions.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic display, and in particular to a carrier-free injection light-emitting device structure based on double-gate regulation. Background Art

[0002] Quantum dots, as luminescent materials, offer advantages such as narrow half-width (FWHM), high color purity, extremely high quantum yield, and full-spectrum tunability. Consequently, quantum dot light-emitting diodes (QLEDs) hold great promise as a leading new display device. Non-injection quantum dot light-emitting diodes (QLEDs) possess unique advantages in the micro-display industry and overcome bonding technology barriers, making them promising applications in the high-end display industry.

[0003] However, the luminous efficiency and brightness of QLED devices, especially those without injection, are significantly affected by the carrier recombination process. This places high demands on the quality of the electric field generator and quantum dot light-emitting layer used in conjunction with them. This experimental process consumes a lot of time, materials, and labor costs. Similar issues also exist in OLED devices. Summary of the Invention

[0004] In view of the shortcomings of the existing technology, the technical problem to be solved by the present invention is to provide a carrier-free light-emitting device structure based on dual-gate regulation, aiming to achieve an improvement in luminous efficiency or luminous brightness through gate regulation. It is worth noting that in single-gate regulation, brightness regulation and efficiency regulation are not compatible at the same time. However, the present invention effectively improves both luminous brightness and luminous efficiency through dual-gate regulation.

[0005] To achieve the above objectives, the present invention provides a non-carrier injection light-emitting device structure based on dual-gate regulation, the device structure sequentially comprising: a first gate regulation electrode, a first gate insulating layer, a non-injection type light-emitting unit, a second gate insulating layer, and a first gate regulation electrode;

[0006] The non-injection type light-emitting unit includes: a light-emitting material layer, a first electrode and a second electrode arranged on both sides of the light-emitting material layer, a first dielectric layer arranged between the first electrode and the light-emitting material layer, and a second dielectric layer arranged between the second electrode and the light-emitting material layer; the first gate insulating layer is located between the first electrode and the first gate control electrode, and the second gate insulating layer is located between the second electrode and the second gate control electrode; at least one of the first dielectric layer and the second dielectric layer is a non-injection insulating layer, and the remaining is a carrier transport / injection layer;

[0007] When the device is in operation, a first AC power supply is applied to the first electrode and the second electrode, and the first AC power supply is used to power the non-injection light-emitting unit to emit light; the first gate control electrode applies a first bias power supply relative to the first electrode, and the second gate control electrode applies a second bias power supply relative to the second electrode;

[0008] The first bias power supply and the second bias power supply are used to construct an electric field to regulate the mobility of carriers in the non-injection type light-emitting unit and respectively enhance the luminous brightness and luminous efficiency of the non-injection type light-emitting unit.

[0009] In a specific embodiment, the non-injection type light-emitting unit includes, in sequence: a first electrode, a non-injection insulating layer, a light-emitting material layer, a non-injection insulating layer, and a second electrode; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer; the light-emitting material layer is a P-type region adjacent to the first electrode and an N-type region adjacent to the second electrode;

[0010] Wherein, when the majority carriers of the light-emitting material layer are electron carriers, the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, so that the luminescence brightness of the non-injection light-emitting unit is improved; the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, so that the luminous efficiency of the non-injection light-emitting unit is improved;

[0011] When the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

[0012] In a specific embodiment, the non-injection type light-emitting unit is configured as follows: including a first electrode, a non-injection insulating layer, a light-emitting material layer, an electron transport / injection layer, and a second electrode in sequence; or including a first electrode, a hole transport / injection layer, a light-emitting material layer, a non-injection insulating layer, and a second electrode in sequence; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer or an organic light-emitting layer; when the light-emitting material layer is a PN light-emitting layer, the light-emitting material layer is a P-type region adjacent to the first electrode and is an N-type region adjacent to the second electrode.

[0013] In a specific embodiment, when the majority carriers of the light-emitting material layer are electron carriers; the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, so that the luminous brightness of the non-injection light-emitting unit is improved; the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, so that the luminous efficiency of the non-injection light-emitting unit is improved.

[0014] In a specific embodiment, when the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

[0015] In a specific embodiment, the first bias power supply and the second bias power supply are adjustable voltage power supplies, and the first bias power supply and the second bias power supply are adjustable voltage power supplies that are adjusted according to the luminous brightness or the luminous efficiency requirements.

[0016] In a specific embodiment, a first current-limiting resistor is further connected in series between the first gate control electrode and the first bias power supply circuit, and a second current-limiting resistor is further connected in series between the second gate control electrode and the second bias power supply circuit.

[0017] In a specific embodiment, the first gate control electrode or the second gate control electrode is disposed on the light-emitting side of the device structure and is a transparent electrode.

[0018] The present invention has the following beneficial effects: Through gate control, the present invention can construct a built-in electric field within the light-emitting device, thereby controlling the luminous efficiency or brightness, thereby improving the luminous efficiency or brightness. Furthermore, the present invention overcomes the problem of single-gate control, where brightness control and efficiency control cannot be simultaneously controlled. Through dual-gate control, the present invention effectively improves both brightness and efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of a structure of a non-carrier injection light-emitting device based on dual-gate regulation in a specific embodiment of the present invention;

[0020] Figure 2 This is a schematic diagram of a double-terminal non-injection dual-gate controlled light-emitting device structure in a specific embodiment of the present invention;

[0021] Figure 3 Schematic diagrams of two types of regulation of a double-terminal non-injection double-gate regulated light-emitting device structure in a specific embodiment of the present invention;

[0022] Figure 4 This is a schematic diagram of a structure of a double-gate light-emitting device with no hole injection according to a specific embodiment of the present invention;

[0023] Figure 5 Schematic diagrams of two types of regulation of a hole-free injection-free double-gate regulated light-emitting device structure in a specific embodiment of the present invention;

[0024] Figure 6 This is a schematic diagram of the structure of a double-gate controlled light-emitting device with no electron injection according to a specific embodiment of the present invention;

[0025] Figure 7 These are two control schematic diagrams of the electron non-injection type double-gate control light-emitting device structure in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0026] The following describes in detail embodiments of the present invention, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0027] In the description of this patent, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing this patent and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on this patent.

[0028] In the description of this patent, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," and "set" should be understood in a broad sense. For example, they can refer to fixed connection or set, detachable connection or set, or integral connection or set. Those skilled in the art will understand the specific meanings of the above terms in this patent based on the specific circumstances.

[0029] The embodiment of the present invention provides a non-carrier injection light emitting device structure based on dual-gate regulation, such as Figure 1-Figure 7In the present invention, by setting a gate control electrode and constructing a built-in electric field under the condition of applying a potential, the majority carriers are reduced and the minority carriers are increased, thereby avoiding the reduction of luminous efficiency caused by excessive recombination of majority carriers and improving the luminous brightness.

[0030] For example, when the majority carriers of the device are electrons, the first gate control electrode forms a built-in electric field when applying a forward gate voltage, increasing the number of holes. At the same time, the second gate control electrode applies a forward gate voltage to reduce electrons, avoiding the excess electrons from failing to recombine and causing a decrease in luminous efficiency, thereby improving the luminous efficiency and increasing the luminous brightness.

[0031] Example 1

[0032] like Figure 1-Figure 7 As shown, in one embodiment of the present invention, a non-carrier injection light-emitting device structure based on dual-gate regulation is provided, and the device structure sequentially comprises: a first gate regulation electrode, a first gate insulating layer, a non-injection type light-emitting unit, a second gate insulating layer, and a first gate regulation electrode;

[0033] The non-injection type light-emitting unit includes: a light-emitting material layer, a first electrode and a second electrode arranged on both sides of the light-emitting material layer, a first dielectric layer arranged between the first electrode and the light-emitting material layer, and a second dielectric layer arranged between the second electrode and the light-emitting material layer; the first gate insulating layer is located between the first electrode and the first gate control electrode, and the second gate insulating layer is located between the second electrode and the second gate control electrode; at least one of the first dielectric layer and the second dielectric layer is a non-injection insulating layer, and the remaining is a carrier transport / injection layer;

[0034] When the device is in operation, a first AC power supply is applied to the first electrode and the second electrode, and the first AC power supply is used to power the non-injection light-emitting unit to emit light; the first gate control electrode applies a first bias power supply relative to the first electrode, and the second gate control electrode applies a second bias power supply relative to the second electrode;

[0035] The first bias power supply and the second bias power supply are used to construct an electric field to regulate the mobility of carriers in the non-injection type light-emitting unit and respectively enhance the luminous brightness and luminous efficiency of the non-injection type light-emitting unit.

[0036] The patent of this invention mainly protects the structure. The structure of this invention achieved by adopting other processes based on the structure of this invention also falls within the protection scope of this invention.

[0037] Example 2

[0038] like Figure 2As shown, based on the first embodiment of the present invention, the non-injection type light emitting device provided in the second embodiment of the present invention is a double-ended non-injection type; in this case, the non-injection type light emitting unit includes:

[0039] The non-injection type light-emitting unit comprises, in sequence: a first electrode, a non-injection insulating layer, a light-emitting material layer, a non-injection insulating layer, and a second electrode; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer; the light-emitting material layer is a P-type region adjacent to the first electrode and an N-type region adjacent to the second electrode;

[0040] like Figure 3 As shown, the device structure realizes the regulation of luminous brightness and luminous efficiency through the following methods.

[0041] (a) when the majority carriers of the light-emitting material layer are electron carriers, the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, thereby improving the luminous brightness of the non-injection light-emitting unit; and the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, thereby improving the luminous efficiency of the non-injection light-emitting unit;

[0042] (b) When the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

[0043] Example 3

[0044] like Figure 4-Figure 5 As shown, based on the first embodiment of the present invention, the non-injection type light emitting device provided in the third embodiment of the present invention is a single-ended non-injection type, specifically adopting non-hole injection.

[0045] The non-injection type light-emitting unit is configured as follows: including a first electrode, a non-injection insulating layer, a light-emitting material layer, an electron transport / injection layer, and a second electrode in sequence; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer or an organic light-emitting layer; when the light-emitting material layer is a PN light-emitting layer, the light-emitting material layer is a P-type region adjacent to the first electrode and is an N-type region adjacent to the second electrode.

[0046] like Figure 5 As shown, the device structure realizes the regulation of luminous brightness and luminous efficiency through the following methods.

[0047] (a) When the majority carriers of the light-emitting material layer are electron carriers; the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, so that the luminous brightness of the non-injection light-emitting unit is improved; the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, so that the luminous efficiency of the non-injection light-emitting unit is improved.

[0048] (b) When the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

[0049] Example 4

[0050] like Figure 6-Figure 7 As shown, based on the first embodiment of the present invention, the non-injection type light emitting device provided in the fourth embodiment of the present invention is a single-ended non-injection type, specifically adopting electron non-injection.

[0051] The non-injection type light-emitting unit is configured as follows: including a first electrode, a hole transport / injection layer, a light-emitting material layer, a non-injection insulating layer, and a second electrode in sequence; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer; when the light-emitting material layer is a PN light-emitting layer, the light-emitting material layer is a P-type region adjacent to the first electrode and is an N-type region adjacent to the second electrode.

[0052] like Figure 7 As shown, the device structure realizes the regulation of luminous brightness and luminous efficiency through the following methods.

[0053] (a) When the majority carriers of the light-emitting material layer are electron carriers; the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, so that the luminous brightness of the non-injection light-emitting unit is improved; the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, so that the luminous efficiency of the non-injection light-emitting unit is improved.

[0054] (b) When the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

[0055] Furthermore, the first bias power supply and the second bias power supply are adjustable voltage power supplies, and the first bias power supply and the second bias power supply are adjustable voltage power supplies according to the luminous brightness or the luminous efficiency requirements. The bias power supply is an adjustable voltage power supply, and the voltage value of the bias power supply can be adjusted according to the actual application of each device. The bias power supply is adjusted according to the luminous brightness or the luminous efficiency requirements to obtain a better luminous efficiency or a higher luminous brightness.

[0056] In various embodiments, a first current-limiting resistor is connected in series between the first gate control electrode and the first bias power supply circuit, and a second current-limiting resistor is connected in series between the second gate control electrode and the second bias power supply circuit to prevent excessive circuit current from burning out the device.

[0057] Typically, the first gate control electrode or the second gate control electrode is arranged on the light-emitting side of the device structure and is a transparent electrode. It is worth mentioning that transparent electrons can adopt transparent electrodes such as ITO and AZO, and can also adopt hollow metal electrodes in the form of grids, meshes, etc. In fact, the gate control electrode can be arranged on the light-emitting side or the backlight side of the device structure. Typically, the gate control electrode is arranged on the backlight side of the device structure to reduce the loss of light transmittance of the gate control electrode and improve the brightness of the light. In addition, in fact, the light-emitting angle can also be perpendicular to the side of the radial direction where the first electrode, the second electrode, and the gate control electrode are located. The present invention does not actually limit the light-emitting direction of the device.

[0058] The above describes in detail the preferred embodiments of the present invention. It should be understood that those skilled in the art can make numerous modifications and variations based on the concepts of the present invention without inventive effort. Therefore, any technical solutions that can be derived by those skilled in the art through logical analysis, reasoning, or limited experimentation based on the concepts of the present invention and the prior art should be within the scope of protection defined by the claims.

Claims

1. A double-gate controlled, non-carrier-injection light-emitting device structure, characterized in that: The device structure comprises in sequence: a first gate control electrode, a first gate insulating layer, a non-injection type light-emitting unit, a second gate insulating layer, and a first gate control electrode; The non-injection type light-emitting unit includes: a light-emitting material layer, a first electrode and a second electrode arranged on both sides of the light-emitting material layer, a first dielectric layer arranged between the first electrode and the light-emitting material layer, and a second dielectric layer arranged between the second electrode and the light-emitting material layer; the first gate insulating layer is located between the first electrode and the first gate control electrode, and the second gate insulating layer is located between the second electrode and the second gate control electrode; at least one of the first dielectric layer and the second dielectric layer is a non-injection insulating layer, and the remaining is a carrier transport / injection layer; When the device is in operation, a first AC power supply is applied to the first electrode and the second electrode, and the first AC power supply is used to power the non-injection light-emitting unit to emit light; the first gate control electrode applies a first bias power supply relative to the first electrode, and the second gate control electrode applies a second bias power supply relative to the second electrode; The first bias power supply and the second bias power supply are used to construct an electric field to regulate the mobility of carriers in the non-injection type light-emitting unit and respectively enhance the luminous brightness and luminous efficiency of the non-injection type light-emitting unit.

2. A double-gate controlled, non-carrier-injection light-emitting device structure according to claim 1, characterized in that: The non-injection type light-emitting unit comprises, in sequence: a first electrode, a non-injection insulating layer, a light-emitting material layer, a non-injection insulating layer, and a second electrode; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer; the light-emitting material layer is a P-type region adjacent to the first electrode and an N-type region adjacent to the second electrode; Wherein, when the majority carriers of the light-emitting material layer are electron carriers, the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, so that the luminescence brightness of the non-injection light-emitting unit is improved; the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, so that the luminous efficiency of the non-injection light-emitting unit is improved; When the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

3. The double-gate controlled, non-carrier-injection light-emitting device structure according to claim 1, wherein: The non-injection type light-emitting unit is configured as follows: including a first electrode, a non-injection insulating layer, a light-emitting material layer, an electron transport / injection layer, and a second electrode in sequence; or including a first electrode, a hole transport / injection layer, a light-emitting material layer, a non-injection insulating layer, and a second electrode in sequence; the light-emitting material layer is a PN light-emitting layer, a quantum dot light-emitting layer or an organic light-emitting layer; when the light-emitting material layer is a PN light-emitting layer, the light-emitting material layer is a P-type region adjacent to the first electrode and is an N-type region adjacent to the second electrode.

4. A double-gate controlled, non-carrier-injection light-emitting device structure according to claim 3, characterized in that: When the majority carriers of the light-emitting material layer are electron carriers; the first gate control electrode applies a forward potential relative to the first electrode to increase the hole carriers in the light-emitting material layer, so that the luminous brightness of the non-injection light-emitting unit is improved; the second gate control electrode applies a forward potential relative to the second electrode to reduce the electron carriers in the light-emitting material layer, so that the luminous efficiency of the non-injection light-emitting unit is improved.

5. The double-gate controlled, non-carrier-injection light-emitting device structure according to claim 3, wherein: When the majority carriers of the light-emitting material layer are hole-type carriers, the first gate control electrode applies a negative potential relative to the first electrode to reduce the hole-type carriers in the light-emitting material layer, so as to improve the luminous efficiency of the non-injection light-emitting unit; the second gate control electrode applies a negative potential relative to the second electrode to increase the electron-type carriers in the light-emitting material layer, so as to improve the luminous brightness of the non-injection light-emitting unit.

6. The double-gate controlled, non-carrier-injection light-emitting device structure according to claim 1, wherein: The first bias power supply and the second bias power supply are adjustable voltage power supplies, and the first bias power supply and the second bias power supply are adjustable voltage power supplies that are adjusted according to the luminous brightness or the luminous efficiency requirements.

7. The double-gate controlled, non-carrier-injection light-emitting device structure according to claim 1, wherein: A first current-limiting resistor is connected in series between the first gate control electrode and the first bias power supply circuit, and a second current-limiting resistor is connected in series between the second gate control electrode and the second bias power supply circuit.

8. The double-gate controlled, non-carrier-injection light-emitting device structure according to claim 1, wherein: The first gate control electrode or the second gate control electrode is arranged on the light-emitting side of the device structure and is a transparent electrode.

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