Hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate and preparation method

Abstract

The invention discloses a hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate and a preparation method, and the preparation method comprises the steps: preparing a silicon carbide micro-ring optical frequency comb and an erbium-doped lithium niobate waveguide amplifier respectively, designing two device ports, and integrating the silicon carbide micro-ring optical frequency comb and the erbium-doped lithium niobate waveguide amplifier through end face coupling to obtain the hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate. And thus, the hybrid integrated optical comb amplifier is obtained. The hybrid integrated optical comb amplifier disclosed by the invention has the characteristics of miniaturization, easiness in integration, random design of spatial shapes of the optical frequency comb part and the amplifier part, adjustable size and high degree of freedom, not only can improve the performance of an optical system in an application scene, but also can reduce the complexity and cost of the system. The method has a great application prospect in the high-tech fields of optical communication, laser radar, optical clocks, precise spectrum detection, quantum calculation and the like.

Description

Technical Field

[0001] The present invention belongs to the field of chip integration technology, and specifically relates to a hybrid integrated optical comb amplifier based on silicon carbide (SiC) and erbium-doped lithium niobate (LiNbO3) and a preparation method thereof. The present invention is applicable to heterogeneous integration of various thin film materials. Background Art

[0002] Conventional optical frequency combs (OFCs) are typically based on mode-locked lasers. While they offer stable performance, their bulk, system complexity, and high cost limit their application outside the laboratory. In recent years, Kerr microcombs based on optical microcavities have rapidly become a research hotspot due to their advantages such as miniaturization, ease of integration, low power consumption, wide bandwidth, and high repetition rate. 4H-SiC, with its high nonlinear coefficient, low loss (0.1 dB / cm), high thermal conductivity (490 W / (m·K)), and high damage threshold (80 GW / cm²), is an ideal material for generating long-term, stable, broadband microcombs. However, the low output power of microcombs limits their practical applications. To increase the output power of microcombs, an erbium-doped fiber amplifier (EDFA) is typically used, but this increases system complexity and cost. Therefore, developing an efficient microcomb amplifier is crucial for the practical application of microcombs.

[0003] Single-crystal lithium niobate (LN) is an attractive photonic material due to its wide transparency window, high refractive index, and large acousto-optic, nonlinear, and electro-optic coefficients. Transforming bulk LN crystals into thin-film lithium niobate (TFLN) further enables the fabrication of high-performance integrated photonic devices for both classical and quantum applications, such as low-loss waveguides, high-quality microresonators, high-speed modulators, and efficient optical frequency converters. To achieve integrated active photonic devices, rare-earth ion (REI)-doped TFLN has recently been used to demonstrate microlasers, waveguide amplifiers, quantum emitters, and quantum memories.(References: A. Yi, C. Wang, L. Zhou, et al., Appl. Phys. Rev. 9, 031302 (2022); H. Ou, Light: Sci. Appl. 13, 219 (2024); L. Cai, J. Li, R. Wang, et al., Photonics Res. 10, 870 (2022); C. Wang, J. Li, A. Yi, et al., Light: Sci. Appl. 11, 341 (2022); Q. Luo, F. Bo, Y. Kong, et al., Adv. Photonics 5, 034002 (2023); Y. Chen, Sci. China Phys. Mech. Astron. 65, 294231 (2022); Y. Jia, J. Wu, X. Sun, et al., Laser Photonics Rev. 16, 2200059 (2022); J. Zhou, Y. Liang, Z. Liu, et al., Laser Photonics Rev. 15, 2100030 (2021); M. Cai, K. Wu, J. Xiang, et al., IEEE J. Sel. Top. Quantum Electron. 28, 1 (2022); R. Bao, L. Song, J. Chen, et al., Opt. Lett. 48, 6348 (2023); X. Xue, J. g. Qiu, T. Ding, et al., Opt. Mater. Express 14, 1985 (2024); R. Bao, Z. Fang, J. Liu, et al., “An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW,” Laser Photonics Rev. (2024). https: / / onlinelibrary.wiley.com / doi / abs / 10.1002 / lpor.202400765 .).

[0004] Active and passive integrated chips and micro-comb amplifier technologies based on lithium niobate thin films have broad application prospects in multiple fields. They can solve problems such as large size, high power consumption, and difficult integration in traditional technologies, and provide new paths for future technological innovation and development. Summary of the Invention

[0005] The purpose of the present invention is to solve the problem of low output power of micro-combs in the prior art and to provide a hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate and a preparation method thereof.

[0006] The specific technical solution for achieving the purpose of the present invention is:

[0007] A method for preparing a hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate, the method comprising the following steps:

[0008] Step 1: Prepare Er-doped LiNbO3 thin film material and plate chromium film

[0009] The erbium-doped lithium niobate thin film material purchased from Jinan Jingzheng Company consists of three layers: the first layer is an erbium-doped lithium niobate thin film with a thickness of 100nm-5μm; the second layer is a silicon dioxide thin film layer with a thickness of 1μm-10μm; and the third layer is a silicon substrate layer with a thickness of 100μm-1mm. A chromium film layer with a thickness of 50nm-900nm is plated on the surface of the erbium-doped lithium niobate thin film material.

[0010] Step 2: Femtosecond laser direct writing combined with chemical mechanical polishing

[0011] The erbium-doped lithium niobate thin film material with a chromium film on the surface is fixed on a three-dimensional computer-programmable displacement platform, a femtosecond laser is focused on the chromium film layer on the surface of the thin film material through a microscope objective lens, the displacement platform is driven to move according to computer programming, and a femtosecond laser direct writing process is started simultaneously to remove the chromium film layer on the surface of the erbium-doped lithium niobate thin film material and directly write a required planar mask pattern; the erbium-doped lithium niobate thin film material after femtosecond laser direct writing is placed in a mechanical polishing machine, and its surface is chemically mechanically polished using a chemical polishing solution; the chromium film on the surface of the erbium-doped lithium niobate thin film material that is not removed by the femtosecond laser direct writing protects the erbium-doped lithium niobate thin film from being etched by chemical mechanical polishing, the erbium-doped lithium niobate thin film material in other areas is polished and etched, and then a chromium etching solution is used to remove the surface chromium mask, and finally the desired erbium-doped lithium niobate waveguide amplifier structure is obtained;

[0012] Step 3: Surface Preparation

[0013] Depositing a layer of silicon dioxide with a thickness of 0.5 μm to 2 μm on the surface of the erbium-doped lithium niobate waveguide amplifier structure obtained in step 2 to protect the surface of the erbium-doped lithium niobate waveguide amplifier structure and confine the port light field mode;

[0014] Step 4: End surface polishing and laser cutting

[0015] The erbium-doped lithium niobate waveguide amplifier structure obtained in step 3 is fixed to a quartz glass fixture using paraffin wax, exposing the end face portion to be polished. The fixture is fixed to a polishing machine, and a cerium oxide suspension polishing fluid is used. The polishing pressure is controlled to be 0.1 MPa-1.2 MPa, the speed is controlled to be 50 r / s-100 r / s, and the time is controlled to be 10 min-100 min, to ensure that the end face reaches nanometer-level flatness and smoothness; one end of the polished erbium-doped lithium niobate waveguide amplifier is laser cut to cut out a boss with a width of 100 μm-500 μm and a length of 50 μm-500 μm; the end face quality is inspected using an optical microscope, and the polished erbium-doped lithium niobate amplifier is cleaned with ultrapure water and anhydrous ethanol in sequence to remove residual polishing fluid and impurities on the surface;

[0016] Step 5: Package and integrate the Erbium-doped LiNbO3 waveguide amplifier

[0017] The erbium-doped lithium niobate waveguide amplifier obtained in step 4 is subjected to performance testing, including waveguide loss and waveguide amplifier amplification performance, and the erbium-doped lithium niobate thin film waveguide amplifier is fixed on a ceramic substrate. A coupling platform is used to encapsulate an optical fiber aconic lens at the end of the erbium-doped lithium niobate thin film waveguide amplifier without a boss, and the optical fiber is fixed on the ceramic substrate to complete the packaging;

[0018] Step 6: Prepare the Silicon Carbide Material

[0019] A silicon substrate with a thickness of 400 μm to 600 μm is selected as the substrate material, on which a silicon dioxide buffer layer with a thickness of 1 μm to 10 μm and a 4H-silicon carbide functional layer with a thickness of 200 nm to 800 nm are sequentially deposited; this structure can effectively reduce stress and improve the stability of the microring.

[0020] Step 7: Electron Beam Lithography (EBL) combined with ICPRIE etching

[0021] The silicon carbide material from step 6 is used to define a microring pattern on the 4H-silicon carbide functional layer using electron beam lithography. High-resolution electron beam exposure is used to ensure the dimensional accuracy and shape consistency of the microring. The design parameters of the microring include: a cavity length of approximately 50μm-1mm, a coupling region length of approximately 10μm-100μm, a gap of 200nm-600nm, and a waveguide width of 50nm-1μm. The defined microring pattern is etched using the ICPRIE process.

[0022] Step 8: Post-processing and performance testing of silicon carbide microrings

[0023] Depositing 500nm-5μm thick silicon dioxide on the surface of the silicon carbide microring obtained in step 7 as a waveguide binding layer and waveguide protection layer; then polishing the end face of the silicon carbide microring waveguide;

[0024] Step 9: Hybrid integration of Er-doped LiNbO3 waveguide amplifier and SiC microring optical frequency comb

[0025] The erbium-doped lithium niobate waveguide amplifier obtained in step 5, in which one end of the optical fiber is encapsulated and the other end is cut into a boss, and the silicon carbide microring optical frequency comb obtained in step 8 are end-face coupled on an automatic coupling platform and packaged. Then, the performance of the hybrid integrated optical frequency comb amplifier is tested, completing the preparation process to obtain the hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate.

[0026] The erbium-doped lithium niobate waveguide amplifier is subjected to a boss cutting process at one end, so as to facilitate subsequent coupling with the end face of the silicon carbide microring waveguide and avoid alignment difficulties caused by non-parallelism.

[0027] The erbium-doped lithium niobate waveguide amplifier and the silicon carbide microring optical frequency comb are configured, and the port mode field of the erbium-doped lithium niobate waveguide amplifier and the port mode field of the silicon carbide microring waveguide are designed in advance, so that the overlapping integral of the two mode fields is high, thereby reducing the loss caused by end face coupling.

[0028] The silicon carbide material is used as the base material of the micro-ring optical frequency comb.

[0029] A hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate manufactured by the above method.

[0030] Compared with the prior art, the advantages of the present invention are:

[0031] 1) The hybrid integrated optical comb amplifier can achieve high gain for the optical comb in the C+L band. This high gain performance solves the problem of low output power of traditional microcombs and greatly enhances the application potential of microcombs.

[0032] 2) Optimized end-face polishing technology and end-face mode field design ensure low-loss coupling between the silicon carbide microring resonator and the erbium-doped lithium niobate waveguide amplifier. This feature improves the transmission efficiency of the entire system and reduces signal loss.

[0033] 3) Compared with traditional optical frequency comb systems based on mode-locked lasers, this hybrid integrated optical comb amplifier is smaller and easier to integrate. It has the advantages of miniaturization and lightweight, and is suitable for use in scenarios that are sensitive to space and weight.

[0034] 4) Silicon carbide (SiC) is used as the substrate material for the micro-ring comb. SiC exhibits excellent thermal stability and damage threshold. Its high thermal conductivity (490 W / (m·K)) and high damage threshold (80 GW / cm²) ensure long-term, stable broadband micro-comb generation. This ensures excellent performance even under high-intensity pumping conditions, improving device reliability and lifetime.

[0035] 5) This hybrid integrated optical comb amplifier is not only suitable for fields such as precision measurement, spectral analysis and coherent communication systems, but can also be extended to other applications that require high-power and high-stability optical frequency comb signal output, such as optical computing, astronomical detection, atomic clocks, etc.

[0036] 6) The preparation process is simple and efficient. The erbium-doped lithium niobate waveguide amplifier part and the silicon carbide microring optical frequency comb part are prepared separately, some of which can be reused, and the manufacturing cost is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 This is a flow chart for preparing a hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate according to the present invention;

[0038] Figure 2 It is a schematic diagram of the optical frequency comb gain effect of the hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate of the present invention. DETAILED DESCRIPTION

[0039] The present invention will be further described below with reference to the embodiments and drawings, but the scope of protection of the present invention should not be limited thereto.

[0040] Example 1

[0041] See Figure 1 , the preparation method of the present invention comprises the following steps:

[0042] Step a: Prepare erbium-doped lithium niobate thin film material and plate chromium film

[0043] Erbium-doped lithium niobate thin film material was purchased from Jinan Jingzheng Company. It consists of three layers: the first layer is an erbium-doped lithium niobate thin film 1, with a thickness of 500nm; the second layer is a silicon dioxide thin film layer 2, with a thickness of 2.8μm; and the third layer is a silicon base layer 3, with a thickness of 500μm. A chromium film layer 4, with a thickness of 200nm, is plated on the surface of the erbium-doped lithium niobate thin film material.

[0044] Step b: Femtosecond laser direct writing combined with chemical mechanical polishing

[0045] The erbium-doped lithium niobate thin film material with a chromium-plated surface is fixed on a three-dimensional computer-programmable displacement platform. A femtosecond laser is focused on the chromium film layer on the surface of the thin film material through a microscope objective lens. The displacement platform is driven to move according to the computer programming and the femtosecond laser direct writing process is started simultaneously. The chromium film layer on the surface of the erbium-doped lithium niobate thin film material is removed and the required planar mask pattern 5 is directly written. The lithium niobate thin film material after femtosecond laser direct writing is placed in a mechanical polishing machine and its surface is chemically mechanically polished using a chemical polishing solution. The chromium film on the surface of the lithium niobate thin film material that is not removed by the femtosecond laser direct writing protects the lithium niobate thin film from being etched by chemical mechanical polishing 6. The lithium niobate thin film material in other areas is polished and etched, and then the surface chromium mask is removed using a chromium etching solution. Finally, the desired erbium-doped lithium niobate amplifier structure is obtained, and a 5.3 cm long erbium-doped lithium niobate thin film waveguide amplifier is processed.

[0046] Step c: Surface preparation

[0047] A layer of silicon dioxide 7 with a thickness of 1 μm is deposited on the surface of the erbium-doped lithium niobate waveguide amplifier obtained in step b to protect the surface of the erbium-doped lithium niobate waveguide amplifier and assist in confining the port light field mode.

[0048] Step d: End surface polishing and laser cutting

[0049] The erbium-doped lithium niobate waveguide amplifier obtained in step c was fixed to a quartz glass fixture using paraffin wax, exposing the end face to be polished. The fixture was then fixed to a polishing machine and polished with a cerium oxide suspension at a pressure of 0.2 MPa, a speed of 50 r / s, and a time of 30 minutes to ensure nanometer-level flatness and smoothness of the end face. One end of the polished erbium-doped lithium niobate thin film waveguide amplifier was laser cut to create a 150 μm wide and 300 μm long boss 8. The end face quality was inspected using an optical microscope. The polished erbium-doped lithium niobate amplifier was then cleaned with ultrapure water and then anhydrous ethanol to remove any residual polishing solution and impurities on the surface.

[0050] Step e: Package and integrate the erbium-doped lithium niobate thin film waveguide amplifier

[0051] The erbium-doped lithium niobate thin film waveguide amplifier obtained in step d is subjected to performance tests, including waveguide loss and waveguide amplifier amplification performance, and the erbium-doped lithium niobate thin film waveguide amplifier is fixed on a ceramic substrate. A coupling platform is used to encapsulate the optical fiber cone lens at the end of the erbium-doped lithium niobate thin film waveguide amplifier without a boss, and the optical fiber is fixed on the ceramic substrate to complete the package 9.

[0052] Step f: Prepare silicon carbide material

[0053] A 500 μm thick silicon substrate 12 is selected, on which a 2.8 μm thick silicon dioxide buffer layer 11 and a 400 nm thick silicon carbide functional layer 10 are sequentially deposited. This structure can effectively reduce stress and improve the stability of the microring.

[0054] Step g: Electron beam lithography (EBL) combined with ICPRIE etching

[0055] The silicon carbide material from step f is then used to define the microring pattern on the silicon carbide layer using electron beam lithography. High-resolution electron beam exposure ensures the dimensional accuracy and shape consistency of the microring. The microring design parameters include a cavity length of approximately 700 μm, a coupling region length of approximately 50 μm, a gap of 400 nm, and a waveguide width of 1 μm. The defined microring pattern is then etched using the ICPRIE process to produce the silicon carbide microring 13.

[0056] Step h: Post-processing and performance testing of silicon carbide microrings

[0057] A 1μm-thick layer of silicon dioxide (14) was deposited on the surface of the silicon carbide microring obtained in step g to serve as a waveguide confinement layer and waveguide protection. The end faces of the silicon carbide microring waveguide were then polished. The fabricated silicon carbide microring optical frequency comb was then subjected to performance testing, including spectral analysis, transmission characteristic measurements, and optical frequency comb generation capabilities.

[0058] Step i: Hybrid integration of Er-doped LiNbO3 waveguide amplifier and SiC microring optical frequency comb

[0059] Finally, the erbium-doped lithium niobate waveguide amplifier with one end of the encapsulated optical fiber cut into a boss at the other end obtained in step e and the silicon carbide microring optical frequency comb obtained in step h are end-face coupled on an automatic coupling platform and packaged. Then, the performance of the hybrid integrated optical frequency comb amplifier is tested to complete the preparation process and obtain the hybrid integrated optical comb amplifier 15 based on silicon carbide and erbium-doped lithium niobate.

[0060] Figure 2 The gain characteristics of the hybrid integrated optical frequency comb amplifier of Example 1 under different pump laser conditions are demonstrated. The details are as follows: Figure 2 (a) shows the overall gain of the hybrid integrated optical frequency comb amplifier for the modulation instability comb under 980nm laser pumping conditions, which is about 6.6 dB. Figure 2 (b) Close-up of the comb gain at 1550 nm. Figure 2 (c) shows the gain of the hybrid integrated optical frequency comb amplifier to the optical frequency comb under 1480nm laser pumping conditions. Under this pumping condition, the gain is more significant, typically around 10 dB. Figure 2 (d) shows the comb gain at 1550nm. Figure 2 By comparing spectral variations under different pumping conditions (980nm / 1480nm), the gain characteristics of the hybrid integrated optical frequency comb amplifier over different wavelength ranges were demonstrated. This confirmed that 1480nm pump light provided higher gain than 980nm pump light, but also pointed out that 980nm pump light had lower noise characteristics. These results are of great significance for the optimization and application of this hybrid integrated optical frequency comb amplifier.

[0061] The following table lists the relevant parameters of Example 2, Example 3 and Example 4 of the present invention. The preparation method is similar to that of Example 1, except that the relevant parameters are different.

[0062]

[0063] The above embodiments demonstrate that the present invention, based on a hybrid integrated optical comb amplifier of silicon carbide and erbium-doped lithium niobate, controls the length configuration of the erbium-doped lithium niobate waveguide amplifier through femtosecond laser direct writing to improve gain efficiency; controls the structural parameters of the silicon carbide microring optical frequency comb through EBL+ICPRIE to ensure the generation of an optical frequency comb; and the present invention allows for free selection of parameters for the erbium-doped lithium niobate waveguide amplifier and the silicon carbide microring optical frequency comb, which facilitates full utilization of the properties of the respective thin film materials, resolves the problem of low output power of the optical frequency comb, thereby expanding its application scenarios and enhancing its application potential.

Claims

1. A method for preparing a hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate, characterized in that: The method comprises the following steps: Step 1: Prepare Er-doped LiNbO3 thin film material and plate chromium film The erbium-doped lithium niobate thin film material has three layers: the first layer is an erbium-doped lithium niobate thin film with a thickness of 100nm-5μm; the second layer is a silicon dioxide thin film layer with a thickness of 1μm-10μm; the third layer is a silicon base layer with a thickness of 100μm-1mm; and a chromium film layer with a thickness of 50nm-900nm is plated on the surface of the erbium-doped lithium niobate thin film material; Step 2: Femtosecond laser direct writing combined with chemical mechanical polishing The erbium-doped lithium niobate thin film material with a chromium film on its surface is fixed on a three-dimensional computer programmable displacement platform, a femtosecond laser is focused on the chromium film layer on the surface of the thin film material through a microscope objective lens, the displacement platform is driven to move according to computer programming, and a femtosecond laser direct writing process is simultaneously initiated to remove the chromium film layer on the surface of the erbium-doped lithium niobate thin film material and directly write a desired planar mask pattern; the erbium-doped lithium niobate thin film material after femtosecond laser direct writing is placed in a mechanical polishing machine, and its surface is chemically mechanically polished using a chemical polishing solution; The chromium film on the surface of the erbium-doped lithium niobate film that is not removed by femtosecond laser direct writing protects the erbium-doped lithium niobate film from chemical mechanical polishing and etching. The erbium-doped lithium niobate film in other areas is polished and etched, and then the surface chromium mask is removed using a chromium etching solution, ultimately obtaining the desired erbium-doped lithium niobate waveguide amplifier structure. Step 3: Surface Preparation Depositing a layer of silicon dioxide with a thickness of 0.5 μm to 2 μm on the surface of the erbium-doped lithium niobate waveguide amplifier structure obtained in step 2 to protect the surface of the erbium-doped lithium niobate waveguide amplifier structure and confine the port light field mode; Step 4: End surface polishing and laser cutting The erbium-doped lithium niobate waveguide amplifier structure obtained in step 3 is fixed to a quartz glass fixture using paraffin wax, exposing the end face portion to be polished. The fixture is fixed to a polishing machine, and a cerium oxide suspension polishing fluid is used. The polishing pressure is controlled to be 0.1 MPa-1.2 MPa, the speed is controlled to be 50 r / s-100 r / s, and the time is controlled to be 10 min-100 min, to ensure that the end face reaches nanometer-level flatness and smoothness; one end of the polished erbium-doped lithium niobate waveguide amplifier is laser cut to cut out a boss with a width of 100 μm-500 μm and a length of 50 μm-500 μm; the end face quality is inspected using an optical microscope, and the polished erbium-doped lithium niobate amplifier is cleaned with ultrapure water and anhydrous ethanol in sequence to remove residual polishing fluid and impurities on the surface; Step 5: Package and integrate the Erbium-doped LiNbO3 waveguide amplifier The erbium-doped lithium niobate waveguide amplifier obtained in step 4 is subjected to performance testing, including waveguide loss and waveguide amplifier amplification performance, and the erbium-doped lithium niobate thin film waveguide amplifier is fixed on a ceramic substrate. A coupling platform is used to encapsulate an optical fiber aconic lens at the end of the erbium-doped lithium niobate thin film waveguide amplifier without a boss, and the optical fiber is fixed on the ceramic substrate to complete the packaging; Step 6: Prepare the Silicon Carbide Material A silicon substrate with a thickness of 400 μm to 600 μm is selected as the substrate material, on which a silicon dioxide buffer layer with a thickness of 1 μm to 10 μm and a 4H-silicon carbide functional layer with a thickness of 200 nm to 800 nm are sequentially deposited; Step 7: Electron beam lithography combined with ICPRIE etching The silicon carbide material in step 6 is used to define the pattern of micro rings on the 4H-silicon carbide functional layer using electron beam lithography technology; High-resolution electron beam lithography ensures the dimensional accuracy and shape consistency of the microring. Microring design parameters include: cavity length of 50μm-1mm, coupling region length of 10μm-100μm, gap of 200nm-600nm, and waveguide width of 50nm-1μm. The defined microring pattern is etched using the ICPRIE process. Step 8: Post-processing and performance testing of silicon carbide microrings Depositing 500nm-5μm thick silicon dioxide on the surface of the silicon carbide microring obtained in step 7 as a waveguide binding layer and waveguide protection layer; then polishing the end face of the silicon carbide microring waveguide; Step 9: Hybrid integration of Er-doped LiNbO3 waveguide amplifier and SiC microring optical frequency comb The erbium-doped lithium niobate waveguide amplifier obtained in step 5, in which one end of the optical fiber is encapsulated and the other end is cut into a boss, and the silicon carbide microring optical frequency comb obtained in step 8 are end-face coupled on an automatic coupling platform and packaged. Then, the performance of the hybrid integrated optical frequency comb amplifier is tested, completing the preparation process to obtain the hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate.

2. A hybrid integrated optical comb amplifier based on silicon carbide and erbium-doped lithium niobate prepared by the method of claim 1.

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