Low noise amplifier, radio frequency module and electronic equipment

Abstract

The invention provides a low-noise amplifier, a radio frequency module and electronic equipment, and relates to the technical field of amplifiers, the amplifier comprises a first power supply, a first transistor and at least one second transistor, the first ends of the first transistor and the second transistor are electrically connected with the first power supply and are also electrically connected with an input end, and input signals are provided; the second ends of the first transistor and the second transistor are electrically connected with the output end, and the third ends of the first transistor and the second transistor are grounded. The first transistor is a main transistor, the second transistor is an auxiliary transistor, the first transistor and the second transistor respectively generate a first output signal and a second output signal based on an input signal, the first output signal and the second output signal are superposed to form a target signal, and a third voltage signal is applied to a body electrode of the second transistor. The third-order transconductance of the second output signal and the third-order transconductance of the first output signal are opposite in positive and negative, the first-order transconductance of the second output signal is increased, and the linearity of the low-noise amplifier is improved.

Description

Technical Field

[0001] The present application relates to the field of amplifier technology, and in particular to a low-noise amplifier, a radio frequency module, and an electronic device. Background Art

[0002] A low noise amplifier (LNA) is an amplifier with a very low noise figure. It is mainly used to amplify weak signals and is an important component for wireless communication.

[0003] However, for low-noise amplifiers (LNAs), linearity is an important indicator of their performance. Good linearity means high fidelity of the output signal. Therefore, how to improve the linearity of LNAs has become a key issue for those skilled in the art. Summary of the Invention

[0004] In view of this, the present application provides a low noise amplifier, a radio frequency module and an electronic device, the scheme of which is as follows:

[0005] A low noise amplifier comprises: a first power supply, a first transistor and at least one second transistor;

[0006] A first terminal of the first transistor is electrically connected to a first node, the first node is electrically connected to the first power supply via a first resistor, a first voltage signal is applied to the first transistor, and the first node is also electrically connected to an input terminal via a first capacitor, providing an input signal to the first transistor; a second terminal of the first transistor is electrically connected to a second node, and the second node is electrically connected to an output terminal via a second capacitor; a third terminal of the first transistor is grounded; the first transistor generates a first output signal based on the input signal and transmits the first output signal to the second node; the input terminal and the output terminal are the input terminal and the output terminal of the low noise amplifier, respectively;

[0007] The first terminal of the second transistor is electrically connected to a third node, and the third node is electrically connected to the first power supply through a second resistor. A second voltage signal is applied to the second transistor, and the second voltage signal is not greater than the first voltage signal. The third node is also electrically connected to the input terminal through a third capacitor to provide the input signal to the second transistor. The second terminal of the second transistor is electrically connected to the second node, and the third terminal of the second transistor is grounded. The second transistor generates a second output signal based on the input signal and transmits it to the second node. The first output signal and the second output signal form a target signal at the second node. The target signal is the output signal of the low-noise amplifier.

[0008] The body electrode of the second transistor is electrically connected to a third resistor, and the third resistor is electrically connected to a voltage input terminal. A third voltage signal is applied to the body electrode of the second transistor. Based on the third voltage signal, the third-order transconductance of the second output signal is opposite in sign to that of the first output signal, and based on the third voltage signal, the first-order transconductance of the second output signal increases, and the first-order transconductance of the target signal increases.

[0009] Optionally, the second transistor is an N-type field effect transistor, the gate of the second transistor is electrically connected to the third node, the drain of the second transistor is electrically connected to the second node, and the source of the second transistor is grounded.

[0010] Optionally, the at least one second transistor includes at least one second transistor group, the second transistor group includes at least one N-type field effect transistor and at least one P-type field effect transistor, and the second voltage signal includes at least one third voltage signal and at least one fourth voltage signal;

[0011] The gate of the P-type field effect transistor is electrically connected to the third node, the drain of the P-type field effect transistor is electrically connected to the second node, and the source of the P-type field effect transistor is electrically connected to the drain of the N-type field effect transistor;

[0012] The gate of the N-type field effect transistor is electrically connected to the third node, and the source of the N-type field effect transistor is grounded;

[0013] The body electrode of the P-type field effect transistor inputs the third voltage signal, and the body electrode of the N-type field effect transistor inputs the fourth voltage signal.

[0014] Optionally, the at least one second transistor includes two second transistor groups, and the two second transistor groups are connected in parallel;

[0015] One of the two second transistor groups includes a first P-type field effect transistor and a first N-type field effect transistor, and the other of the two second transistor groups includes a second P-type field effect transistor and a second N-type field effect transistor; the third voltage signal includes a first sub-voltage signal and a second sub-voltage signal, and the fourth voltage signal includes a third sub-voltage signal and a fourth sub-voltage signal;

[0016] The gate of the first P-type field effect transistor is electrically connected to the third node, the drain of the first P-type field effect transistor is electrically connected to the second node, the source of the first P-type field effect transistor is electrically connected to the drain of the first N-type field effect transistor, the gate of the first N-type field effect transistor is electrically connected to the first node, and the source of the first N-type field effect transistor is grounded;

[0017] The gate of the second P-type field effect transistor is electrically connected to the third node, the drain of the second P-type field effect transistor is electrically connected to the second node, the source of the second P-type field effect transistor is electrically connected to the drain of the second N-type field effect transistor, the gate of the second N-type field effect transistor is electrically connected to the first node, and the source of the second N-type field effect transistor is grounded;

[0018] Among them, the body electrode of the first P-type field effect transistor inputs the first sub-voltage signal, the body electrode of the first N-type field effect transistor inputs the second sub-voltage signal, the body electrode of the second P-type field effect transistor inputs the third sub-voltage signal, and the body electrode of the second N-type field effect transistor inputs the fourth sub-voltage signal.

[0019] Optionally, the device further includes a first inductor, wherein the first inductor is a three-terminal inductor, and the first inductor includes a first terminal, a second terminal, and a third terminal located between the first terminal and the second terminal;

[0020] The third terminal of the first transistor is electrically connected to the first terminal of the first inductor, the third terminal of the second transistor is electrically connected to the third terminal of the first inductor, and the second terminal of the first inductor is grounded.

[0021] Optionally, the first power supply includes a first sub-power supply;

[0022] The first node is electrically connected to the first sub-power source through the first resistor, and the first sub-power source provides the first voltage signal to the first transistor through the first node;

[0023] The third node is electrically connected to the first sub-power source through the second resistor, and the first sub-power source provides the second voltage signal to the second transistor through the third node;

[0024] wherein the second voltage signal is equal to the first voltage signal; or

[0025] The first power supply includes a second sub-power supply and a third sub-power supply, and the second sub-power supply and the third sub-power supply are connected in series;

[0026] The first node is electrically connected to the second sub-power supply, and the first node is electrically connected to the third sub-power supply through the second power supply, and the second sub-power supply and the third sub-power supply provide the first voltage signal to the first transistor through the first node;

[0027] The third node is electrically connected to the third sub-power supply, and the third sub-power supply provides the second voltage signal to the second transistor through the third node;

[0028] The second voltage signal is smaller than the first voltage signal.

[0029] Optionally, the first transistor is an N-type field effect transistor, the gate of the first transistor is electrically connected to the first node, the drain of the first transistor is electrically connected to the second node, and the source of the first transistor is grounded.

[0030] Optionally, a third transistor is further included, wherein the third transistor is an N-type field effect transistor;

[0031] The gate of the third transistor is electrically connected to the second power supply through a fourth resistor, the drain of the third transistor is electrically connected to the second power supply through a second inductor, and the source of the third transistor is electrically connected to the second node.

[0032] A radio frequency module comprises the low noise amplifier described in any one of the above items.

[0033] An electronic device includes the above-mentioned radio frequency module.

[0034] Compared with the related art, the technical solution of this application has the following beneficial effects:

[0035] The low-noise amplifier includes: a first power supply, a first transistor, and at least one second transistor. The first terminal of the first transistor is electrically connected to a first node, which is electrically connected to the first power supply, and a first voltage signal is applied to the first transistor. The first node is also electrically connected to an input terminal, and an input signal is provided to the first transistor. The second terminal of the first transistor is electrically connected to a second node, which is electrically connected to an output terminal. The third terminal of the first transistor is grounded. The first transistor generates a first output signal based on the input signal and transmits it to the second node.

[0036] The first terminal of the second transistor is electrically connected to a third node, which is electrically connected to a first power supply. A second voltage signal is applied to the second transistor, and the second voltage signal is no greater than the first voltage signal. The third node is electrically connected to an input terminal, and an input signal is provided to the second transistor. The second terminal of the second transistor is electrically connected to the second node, and the third terminal of the second transistor is grounded. The second transistor generates a second output signal based on the input signal and transmits it to the second node. The first output signal and the second output signal form a target signal at the second node. The target signal is the output signal of the low-noise amplifier.

[0037] The body electrode of the second transistor is electrically connected to the third resistor, and the third resistor is electrically connected to the voltage input terminal. A third voltage signal is applied to the body electrode of the second transistor. Based on the third voltage signal, the third-order transconductance of the second output signal and the first output signal are opposite in sign, so that the third-order transconductance of the second transistor can compensate for the third-order transconductance of the target signal, thereby reducing the third-order transconductance of the target signal formed by the superposition of the output signal of the second transistor and the output signal of the first transistor, or even making it zero, thereby increasing the third-order intermodulation point IIP3 and improving the linearity of the low-noise amplifier.

[0038] In addition, based on the third voltage signal, the first-order transconductance of the second output signal increases, and the first-order transconductance of the target signal increases, thereby increasing the first-order transconductance of the target signal, increasing the third-order intercept point IIP3, and improving the linearity of the low-noise amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0040] The structures, proportions, sizes, etc. depicted in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not intended to limit the conditions under which this application can be implemented, and therefore have no substantive technical significance. Any structural modifications, changes in proportional relationships, or adjustments in size, without affecting the efficacy and objectives that can be achieved by this application, should still fall within the scope of the technical contents disclosed in this application.

[0041] Figure 1 A circuit topology diagram of a low-noise amplifier provided in this application;

[0042] Figure 2 This is a first-order transconductance curve of a low-noise amplifier provided in this application;

[0043] Figure 3 The third-order transconductance curve of a low-noise amplifier provided in this application;

[0044] Figure 4 A circuit topology diagram of another low-noise amplifier provided in this application;

[0045] Figure 5 This is a circuit topology diagram of another low-noise amplifier provided in this application. DETAILED DESCRIPTION

[0046] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0047] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0048] As described in the background technology section, the linearity of a low noise amplifier is an important indicator for measuring its working performance. Therefore, how to improve the linearity of a low noise amplifier has become a key issue for those skilled in the art.

[0049] Based on the above, the present application provides a low noise amplifier, such as Figure 1 As shown, Figure 1 This is a circuit topology diagram of a low noise amplifier provided in the present application. The low noise amplifier includes: a first power supply 100, a first transistor MA and at least one second transistor MB.

[0050] The first end of the first transistor MA is electrically connected to the first node 1, and the first node 1 is electrically connected to the first power supply 100 via the first resistor R1 to apply a first voltage signal to the first transistor MA. That is, the first power supply 100 can apply the first voltage signal to the first end of the first transistor MA via the first node 1 to control the turning on of the first transistor MA. The first node 1 is also electrically connected to the input terminal RFin via the first capacitor C1. That is, the first end of the first transistor MA is also electrically connected to the input terminal RFin via the first node 1 to provide an input signal to the first transistor MA via the first node 1, thereby inputting the input signal into the first transistor MA.

[0051] A second terminal of the first transistor MA is electrically connected to a second node 2, and the second node 2 is electrically connected to the output terminal RFout via a second capacitor C2. That is, the second terminal of the first transistor MA is electrically connected to the output terminal RFout via the second node 2. A third terminal of the first transistor MA is grounded. It should be noted that the input terminal RFin and the output terminal RFout are the input terminal and the output terminal of the low-noise amplifier, respectively.

[0052] The first transistor MA can generate a first output signal based on the input signal and transmit it to the second node 2 , that is, the first transistor MA can amplify the input signal input through the input terminal RFin to generate the first output signal and transmit the first output signal to the second node 2 .

[0053] The first end of the second transistor MB is electrically connected to the third node 3, and the third node 3 is electrically connected to the first power supply 100 via the second resistor R2, so as to apply a second voltage signal to the second transistor MB, thereby controlling the second transistor MB to turn on. The second voltage signal is not greater than the first voltage signal, that is, the second voltage signal is less than the first voltage signal, or the second voltage signal is equal to the first voltage signal, that is, the second voltage signal is required to be no greater than the first voltage signal. Therefore, in this low-noise amplifier, the first transistor MA is a main transistor and the second transistor MB is an auxiliary transistor.

[0054] The third node 3 is also electrically connected to the input terminal RFin via the third capacitor C3. That is, the first terminal of the second transistor MB is also electrically connected to the input terminal RFin via the third node 3 to provide an input signal to the second transistor MB, and the input signal is then input to the second transistor MB via the third node 3. The second terminal of the second transistor MB is electrically connected to the second node 2. That is, the second terminal of the second transistor MB is electrically connected to the output terminal RFout via the second node 2. The third terminal of the second transistor MB is grounded.

[0055] The second transistor MB can generate a second output signal based on the input signal and transmit it to the second node 2. That is, the second transistor MB can amplify the input signal input through the input terminal RFin to generate the second output signal, and transmit the second output signal to the second node 2. When the first output signal and the second output signal are transmitted to the second node 2, the first output signal and the second output signal will form a target signal at the second node 2. Specifically, the first output signal and the second output signal will be superimposed at the second node 2 to form the target signal, which is the output signal of the low-noise amplifier provided in this application.

[0056] The body electrode (also called the body terminal) of the second transistor MB is electrically connected to a third resistor R3, which is electrically connected to a voltage input terminal VB to apply a third voltage signal to the body electrode of the second transistor MB. Based on the third voltage signal applied to the body electrode of the second transistor MB, the second output signal has a third-order transconductance that is opposite in sign to the first output signal. For example, if the third-order transconductance of the first output signal is positive, the second output signal has a third-order transconductance that is negative based on the third voltage signal applied to the body electrode of the second transistor MB. Alternatively, if the third-order transconductance of the first output signal is negative, the second output signal has a third-order transconductance that is positive based on the third voltage signal applied to the body electrode of the second transistor MB. Furthermore, based on the third voltage signal applied to the body electrode of the second transistor MB, the first-order transconductance of the second output signal can be increased, thereby increasing the first-order transconductance of the target signal.

[0057] It should be noted that for low noise amplifiers, their nonlinearity mainly comes from transconductance nonlinearity. Usually, the linearity of low noise amplifiers can be measured by the third-order intermodulation point IIP3. The third-order intermodulation point IIP3 is composed of the first-order transconductance and third-order transconductance The larger the third-order intercept point IIP3, the better the linearity of the low-noise amplifier, and vice versa. The formula for the third-order intercept point IIP3 is as follows:

[0058]

[0059] Based on the calculation formula of the third-order intercept point IIP3, we can know that in order to increase the third-order intercept point IIP3, we can reduce the third-order transconductance On the other hand, it can increase the first-order transconductance .

[0060] As can be seen from the above, the low-noise amplifier provided by the present application applies a third voltage signal to the body electrode of the auxiliary transistor (second transistor MB), which can make the third-order transconductance of the second output signal opposite to that of the first output signal. That is, applying the third voltage signal to the body electrode of the auxiliary transistor can make the third-order transconductance of the output signal of the auxiliary transistor opposite to that of the output signal of the main transistor (first transistor MA), so that the third-order transconductance of the auxiliary transistor can compensate for the third-order transconductance of the target signal, thereby making the third-order transconductance of the target signal formed by the superposition of the output signal of the auxiliary transistor and the output signal of the main transistor smaller or even zero, thereby increasing the third-order intermodulation point IIP3 and improving the linearity of the low-noise amplifier. For example Figure 2 As shown, Figure 2 Curve 1 represents the variation curve of the third-order transconductance of the first output signal of the first transistor MA, curve 2 represents the variation curve of the third-order transconductance of the second output signal of the second transistor MB, and curve 3 represents the variation curve of the third-order transconductance of the target signal. Figure 2 It can be seen that when the third-order transconductance of the first output signal and the third-order transconductance of the second output signal are opposite in sign, the third-order intermodulation point IIP3 can be reduced, so that applying a third voltage signal to the body electrode of the second transistor MB can make the third-order transconductance of the first output signal and the third-order transconductance of the second output signal opposite in sign, thereby increasing the third-order intermodulation point IIP3 and improving the linearity of the low-noise amplifier.

[0061] In addition, if Figure 3 As shown, Figure 3 Curve 1 is the variation curve of the first-order transconductance of the first output signal, curve 2 is the variation curve of the first-order transconductance of the second output signal, and curve 3 is the variation curve of the first-order transconductance of the target signal. Figure 3It can be seen that applying the third voltage signal to the body electrode of the second transistor MB can increase the first-order transconductance of the second output signal, thereby increasing the first-order transconductance of the target signal, increasing the third-order intermodulation point IIP3, and improving the linearity of the low-noise amplifier.

[0062] It should be noted that since the third-order transconductance of a transistor can be controlled by the voltage applied to its body electrode, applying a third voltage signal to the body electrode of the second transistor MB can change the third-order transconductance of the second transistor MB, that is, change the third-order transconductance of the second output signal, so that the third-order transconductance of the second output signal is opposite in sign to the third-order transconductance of the first output signal. It should also be noted that the voltage value of the third voltage signal applied to the body electrode of the second transistor MB can be obtained based on the third-order transconductance of the target signal, so that the smaller body electrode voltage within the required voltage range of the target signal's third-order transconductance is the voltage value of the third voltage signal. The voltage range required by the target signal generally refers to the voltage range of the first voltage signal at the first terminal of the first transistor MA.

[0063] In addition, since the low-noise linear amplifier provided in the present application applies a third voltage signal to the body electrode of the second transistor MB, the impact on the performance of the second transistor MB is smaller than the impact of applying an electrical signal at other electrode ends, so that the value range of the third voltage signal can be larger, and the state of the second transistor MB is made more stable. Therefore, when the third voltage signal is applied to the body electrode of the second transistor MB to compensate for the third-order transconductance of the target signal, the sensitivity to the manufacturing process, the change of the second voltage signal and the change of the operating temperature is reduced, which can improve the compensation accuracy of the third-order transconductance of the target signal, and help to effectively improve the linearity of the low-noise amplifier.

[0064] In one embodiment of the present application, Figure 1 As shown, the second transistor MB is an N-type field effect transistor, the gate of the second transistor MB is electrically connected to the third node 3, the drain of the second transistor MB is electrically connected to the second electrode 2, and the source of the second transistor MB is grounded.

[0065] In another embodiment of the present application, Figure 4 As shown, Figure 4 This is a circuit topology diagram of a low-noise amplifier provided in the present application. At least one second transistor MB includes at least one second transistor group 200. The second transistor group 200 includes at least one N-type transistor MBN and at least one P-type transistor MBP. The second voltage signal includes at least one third voltage signal and at least one fourth voltage signal. It should be noted that the at least one third voltage signal corresponds one-to-one with the at least one P-type field effect transistor, for example Figure 4As shown, the third voltage signal can be input to the P-type field effect transistor through VB1 and VB2. At least one fourth voltage signal corresponds to at least one N-type field effect transistor, for example Figure 4 As shown, a third voltage signal can be input to the P-type field effect transistor through VB3 and VB4.

[0066] For the second transistor MB, the gate of the P-type field effect transistor MBP is electrically connected to the third node 3, the drain of the P-type field effect transistor MBP is electrically connected to the second node 2, and the source of the P-type field effect transistor MBP is electrically connected to the drain of the N-type field effect transistor MBN.

[0067] The gate of the N-type field effect transistor MBN is electrically connected to the third node 3 , and the source of the N-type field effect transistor MBN is grounded.

[0068] The body electrode of the P-type field effect transistor MBP is input with a third voltage signal, and the body electrode of the N-type field effect transistor MBN is input with a fourth voltage signal.

[0069] Since the third-order transconductances of the P-type field-effect transistor and the N-type field-effect transistor are opposite in sign, the second transistor group 200 includes at least one P-type field-effect transistor MBP and at least one N-type field-effect transistor MBN. The opposite third-order transconductances of the P-type field-effect transistor and the N-type field-effect transistor can be utilized to achieve complementary third-order transconductances of the second transistor group 200, thereby making the third-order transconductance of the second transistor group 200 smaller. That is, while the second transistor MB promotes the third-order transconductance of the target signal to be smaller, the third-order transconductance of the second transistor MB is also smaller, which can further reduce the third-order transconductance of the target signal, and thus further increase the third-order intermodulation point IIP3, thereby improving the linearity of the low-noise amplifier.

[0070] In one embodiment of the present application, Figure 4 As shown, the at least one second transistor MB includes two second transistor groups 200 , and the two second transistor groups 200 are connected in parallel.

[0071] One of the two second transistor groups 200 includes a first P-type field-effect transistor MBP1 and a first N-type field-effect transistor MBN1, and the other of the two second transistor groups 200 includes a second P-type field-effect transistor MBP2 and a second N-type field-effect transistor MBN2. The third voltage signal includes a first sub-voltage signal and a second sub-voltage signal, and the fourth voltage signal includes a third sub-voltage signal and a fourth sub-voltage signal.

[0072] The gate of the first P-type field effect transistor MBP1 is electrically connected to the third node 3, the drain of the first P-type field effect transistor MBP1 is electrically connected to the second node 2, the source of the first P-type field effect transistor MBP1 is electrically connected to the drain of the first N-type field effect transistor MBN1, the gate of the first N-type field effect transistor MBN1 is electrically connected to the first node 1, and the source of the first N-type field effect transistor MBN1 is grounded;

[0073] The gate of the second P-type field effect transistor MBP2 is electrically connected to the third node 3, the drain of the second P-type field effect transistor MBP2 is electrically connected to the second node 2, the source of the second P-type field effect transistor MBP2 is electrically connected to the drain of the second N-type field effect transistor MBN2, the gate of the second N-type field effect transistor MBN2 is electrically connected to the first node 1, and the source of the second N-type field effect transistor MBN2 is grounded;

[0074] Among them, the body electrode of the first P-type field effect transistor MBP1 inputs the first sub-voltage signal, the body electrode of the first N-type field effect transistor MBN1 inputs the second sub-voltage signal, the body electrode of the second P-type field effect transistor MBP2 inputs the third sub-voltage signal, and the body electrode of the second N-type field effect transistor MBN2 inputs the fourth sub-voltage signal.

[0075] As can be seen from the above, for the low-noise amplifier provided in the present application, the at least one second transistor MB can include two second transistor groups 200, thereby expanding the linearization range of the target signal, so that the target signal can have better linearity within a larger voltage range. It should be noted that when the at least one second transistor MB includes two second transistor groups 200, one of the second transistor groups 200 can be used to make the target signal have better linearity within one voltage range, and the other second transistor group 200 can be used to make the target signal have better linearity within another voltage range, thereby making the target signal have better linearity within a larger voltage range, thereby expanding the linear range of the target signal and improving the linearity of the low-noise amplifier.

[0076] It should be noted that the above embodiment describes that at least one second transistor MB includes two second transistor groups 200, and the second transistor group 200 includes a P-type transistor and an N-type transistor, but the present application does not limit this. According to actual needs, at least one second transistor MB can also include three, four, five or even more second transistor groups 200, and the second transistor group 200 can include more transistors. The types of multiple transistors in the second transistor group 200 can be arbitrarily combined as long as they include at least one P-type transistor and at least one N-type transistor. For example, the second transistor group 200 includes three transistors, and the three transistors include one P-type transistor and two N-type transistors, or the three transistors include two P-type transistors and one N-type transistor.

[0077] In one embodiment of the present application, Figure 1 As shown, the low noise amplifier further includes a first inductor L1 . The first inductor L1 is a three-terminal inductor. The first inductor L1 includes a first terminal, a second terminal, and a third terminal located between the first terminal and the second terminal.

[0078] The third end of the first transistor MA is electrically connected to the first end of the first inductor L1, the third end of the second transistor MB is electrically connected to the third end of the first inductor L1, and the second end of the first inductor L1 is grounded, so that the inductance value of the third end of the first transistor MA, that is, the source of the first transistor MA, can be the first inductance value, and the first inductance value is the inductance value of the first inductor L1, and the inductance value of the third end of the second transistor MB, that is, the source of the second transistor MB, can be adjusted between 0 and the first inductance value, thereby tuning the second-order transconductance of the second output signal of the second transistor MB, that is, tuning the second-order nonlinearity of the second output signal of the second transistor MB, and specifically tuning the phase and amplitude of the second-order transconductance of the second output signal to be close to 0. It should be noted that the second-order nonlinear signal will generate third-order nonlinearity with other signals, that is, the second-order nonlinearity will affect the third-order nonlinearity, causing the third-order transconductance to increase. The low-noise amplifier of the present application can tune the phase and amplitude of the second-order transconductance of the second output signal through the inductance value of the source electrical connection of the second transistor MB, so that it is close to 0, thereby reducing the second-order transconductance, thereby reducing the impact on the third-order nonlinearity, making the third-order transconductance smaller, and thus improving the linearity of the low-noise amplifier.

[0079] In one embodiment of the present application, Figure 1 As shown, the first power supply 100 includes a first sub-power supply 101. A first node 1 is electrically connected to the first sub-power supply 101 via a first resistor R1. The first sub-power supply 101 provides a first voltage signal to the first transistor MA via the first node 1. A third node 3 is electrically connected to the first sub-power supply 101 via a second resistor R2. The first sub-power supply 101 provides a second voltage signal to the second transistor MB via the third node 3. In this embodiment, the second voltage signal is equal to the first voltage signal.

[0080] In another embodiment of the present application, Figure 5As shown, first power supply 100 includes a second sub-power supply 102 and a third sub-power supply 103, which are connected in series. A first node 1 is electrically connected to second sub-power supply 102, which is also electrically connected to third sub-power supply 103 via second power supply 102. Second sub-power supply 102 and third sub-power supply 103 provide a first voltage signal to first transistor MA via first node 1. A third node 3 is electrically connected to third sub-power supply 103, which provides a second voltage signal to second transistor MB via third node 3. In this embodiment, the second voltage signal is less than the first voltage signal.

[0081] From the above, it can be seen that the first transistor MA and the second transistor MB in the low-noise amplifier provided by the present application can share a power supply, the voltages of the first ends of the first transistor MA and the second transistor MB can be the same, the first transistor MA and the second transistor MB can be different power supplies, and the voltages of the first ends of the first transistor MA and the second transistor MB can be different, so that it can be applicable to more application scenarios, making the low-noise amplifier provided by the present application have strong practicality.

[0082] In one embodiment of the present application, the first transistor MA may be an N-type field-effect transistor, the gate of the first transistor MA is electrically connected to the first node 1, the drain of the first transistor MA is electrically connected to the second node 2, and the source of the first transistor MA is grounded. However, the present application does not limit this, and the specific configuration depends on the specific situation.

[0083] In one embodiment of the present application, Figure 1 As shown, the low-noise amplifier further includes a third transistor MC, which is an N-type field-effect transistor. The gate of the third transistor MC is electrically connected to the second power supply VDD via a fourth resistor R4, the drain of the third transistor MC is electrically connected to the second power supply VDD via a second inductor L2, and the source of the third transistor MC is electrically connected to the second node 2.

[0084] Based on the low-noise amplifier described in any of the above embodiments, the present application also provides a radio frequency module, which includes the low-noise amplifier described in any of the above embodiments.

[0085] Based on the above-mentioned radio frequency module, the present application also provides an electronic device, which includes the radio frequency module described in the above embodiment.

[0086] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on the differences from other embodiments, and reference can be made to the common and similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple. For relevant parts, refer to the description of the methods.

[0087] It should be noted that in the description of this application, it should be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a centrally located component.

[0088] It should also be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such article or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the article or device comprising the aforementioned elements.

[0089] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A low noise amplifier, characterized in that include: a first power source, a first transistor, and at least one second transistor; A first terminal of the first transistor is electrically connected to a first node, the first node is electrically connected to the first power supply via a first resistor, a first voltage signal is applied to the first transistor, and the first node is also electrically connected to an input terminal via a first capacitor, providing an input signal to the first transistor; a second terminal of the first transistor is electrically connected to a second node, and the second node is electrically connected to an output terminal via a second capacitor; a third terminal of the first transistor is grounded; the first transistor generates a first output signal based on the input signal and transmits the first output signal to the second node; the input terminal and the output terminal are the input terminal and the output terminal of the low noise amplifier, respectively; The first terminal of the second transistor is electrically connected to a third node, and the third node is electrically connected to the first power supply through a second resistor. A second voltage signal is applied to the second transistor, and the second voltage signal is not greater than the first voltage signal. The third node is also electrically connected to the input terminal through a third capacitor to provide the input signal to the second transistor. The second terminal of the second transistor is electrically connected to the second node, and the third terminal of the second transistor is grounded. The second transistor generates a second output signal based on the input signal and transmits it to the second node. The first output signal and the second output signal form a target signal at the second node. The target signal is the output signal of the low-noise amplifier. The body electrode of the second transistor is electrically connected to a third resistor, and the third resistor is electrically connected to a voltage input terminal. A third voltage signal is applied to the body electrode of the second transistor. Based on the third voltage signal, the third-order transconductance of the second output signal is opposite in sign to that of the first output signal, and based on the third voltage signal, the first-order transconductance of the second output signal increases, and the first-order transconductance of the target signal increases.

2. The low noise amplifier according to claim 1, wherein The second transistor is an N-type field effect transistor, a gate of the second transistor is electrically connected to the third node, a drain of the second transistor is electrically connected to the second node, and a source of the second transistor is grounded.

3. The low noise amplifier according to claim 1, wherein The at least one second transistor includes at least one second transistor group, the second transistor group includes at least one N-type field effect transistor and at least one P-type field effect transistor, and the second voltage signal includes at least one third voltage signal and at least one fourth voltage signal; The gate of the P-type field effect transistor is electrically connected to the third node, the drain of the P-type field effect transistor is electrically connected to the second node, and the source of the P-type field effect transistor is electrically connected to the drain of the N-type field effect transistor; The gate of the N-type field effect transistor is electrically connected to the third node, and the source of the N-type field effect transistor is grounded; The body electrode of the P-type field effect transistor inputs the third voltage signal, and the body electrode of the N-type field effect transistor inputs the fourth voltage signal.

4. The low noise amplifier according to claim 3, wherein: The at least one second transistor includes two second transistor groups, and the two second transistor groups are connected in parallel; One of the two second transistor groups includes a first P-type field effect transistor and a first N-type field effect transistor, and the other of the two second transistor groups includes a second P-type field effect transistor and a second N-type field effect transistor; the third voltage signal includes a first sub-voltage signal and a second sub-voltage signal, and the fourth voltage signal includes a third sub-voltage signal and a fourth sub-voltage signal; The gate of the first P-type field effect transistor is electrically connected to the third node, the drain of the first P-type field effect transistor is electrically connected to the second node, the source of the first P-type field effect transistor is electrically connected to the drain of the first N-type field effect transistor, the gate of the first N-type field effect transistor is electrically connected to the first node, and the source of the first N-type field effect transistor is grounded; The gate of the second P-type field effect transistor is electrically connected to the third node, the drain of the second P-type field effect transistor is electrically connected to the second node, the source of the second P-type field effect transistor is electrically connected to the drain of the second N-type field effect transistor, the gate of the second N-type field effect transistor is electrically connected to the first node, and the source of the second N-type field effect transistor is grounded; Among them, the body electrode of the first P-type field effect transistor inputs the first sub-voltage signal, the body electrode of the first N-type field effect transistor inputs the second sub-voltage signal, the body electrode of the second P-type field effect transistor inputs the third sub-voltage signal, and the body electrode of the second N-type field effect transistor inputs the fourth sub-voltage signal.

5. The low noise amplifier according to any one of claims 1 to 4, characterized in that: The device further includes a first inductor, wherein the first inductor is a three-terminal inductor, and the first inductor includes a first terminal, a second terminal, and a third terminal located between the first terminal and the second terminal; The third terminal of the first transistor is electrically connected to the first terminal of the first inductor, the third terminal of the second transistor is electrically connected to the third terminal of the first inductor, and the second terminal of the first inductor is grounded.

6. The low noise amplifier according to claim 1, wherein: The first power supply includes a first sub-power supply; The first node is electrically connected to the first sub-power source through the first resistor, and the first sub-power source provides the first voltage signal to the first transistor through the first node; The third node is electrically connected to the first sub-power source through the second resistor, and the first sub-power source provides the second voltage signal to the second transistor through the third node; wherein the second voltage signal is equal to the first voltage signal; or The first power supply includes a second sub-power supply and a third sub-power supply, and the second sub-power supply and the third sub-power supply are connected in series; The first node is electrically connected to the second sub-power supply, and the first node is electrically connected to the third sub-power supply through the second power supply, and the second sub-power supply and the third sub-power supply provide the first voltage signal to the first transistor through the first node; The third node is electrically connected to the third sub-power supply, and the third sub-power supply provides the second voltage signal to the second transistor through the third node; The second voltage signal is smaller than the first voltage signal.

7. The low noise amplifier according to claim 1, wherein: The first transistor is an N-type field effect transistor, a gate of the first transistor is electrically connected to the first node, a drain of the first transistor is electrically connected to the second node, and a source of the first transistor is grounded.

8. The low noise amplifier according to claim 1, wherein: It also includes a third transistor, which is an N-type field effect transistor; The gate of the third transistor is electrically connected to the second power supply through a fourth resistor, the drain of the third transistor is electrically connected to the second power supply through a second inductor, and the source of the third transistor is electrically connected to the second node.

9. A radio frequency module, characterized in that: The low noise amplifier comprises the low noise amplifier according to any one of claims 1 to 8.

10. An electronic device, characterized in that: Including the radio frequency module described in claim 9.

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