High-reliability 2*2 microwave switch circuit and control method thereof

Abstract

The invention provides a high-reliability 2 * 2 microwave switch circuit. The high-reliability 2 * 2 microwave switch circuit comprises a first radio frequency input port, a second radio frequency input port, a first radio frequency output port, a second radio frequency output port and eight independent paths, each radio frequency input port is connected with the radio frequency output port through two independent paths, and each independent path comprises at least one series switch tube and at least one parallel switch tube; the circuit adopts a dual-path redundancy topological structure, and the on-off state of the independent path is dynamically switched through a two-bit control word; wherein the first bit control word is used for selecting a main channel path, and the second bit control word is used for disconnecting a specified switching tube group on the redundant path when the switching tubes fail. The invention further provides a control method of the 2 * 2 microwave switch circuit. Therefore, the problem that the failure probability cannot be reduced due to increase of control words and the like due to single-point failure of a port of a traditional 2 * 2 microwave switch circuit can be solved, and the failure rate of the circuit is effectively reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of microwave circuits, and in particular to a high-reliability 2×2 microwave switch circuit and a control method thereof. Background Art

[0002] In recent years, microwave analog switches have been gradually adopted in communications satellites, enabling switching and forwarding between multiple channels and increasing the flexibility of satellite payloads. However, communications satellites operate in space for long periods of time, facing challenges such as extreme temperature fluctuations and high-energy particle radiation. As core components for signal routing, microwave switches must possess materials, structures, and circuit designs that withstand these harsh conditions to enhance their reliability.

[0003] When individual components of a traditional 2×2 microwave switch circuit fail, it is impossible to ensure normal operation of the circuit by adding control words or other measures.

[0004] Existing technology analyzes the reliability of microwave switch circuits after individual component failures. However, this research is based on the assumption that all basic switch units are single-pole, multi-throw switches. This research analyzes failures in large R*R switching networks composed of single-pole, multi-throw switch units, providing analytical expressions and verifications for estimating the probabilities of network connection and blockage. Literature related to microwave switches focuses on the materials and integration processes used in switches, but no research has yet been conducted from the perspective of circuit design. Optical switches, on the other hand, have received extensive research on key technologies such as structure, packaging, topology, and materials, but no research results on reliability analysis have been presented.

[0005] In summary, the reliability of existing microwave switch circuits still needs to be improved. Summary of the Invention

[0006] The object of the present invention is to provide a high-reliability 2×2 microwave switch circuit and a control method thereof, which are used to solve the problems of single-point failure of ports of traditional 2×2 microwave switch circuits and the inability to reduce the failure probability by adding control words.

[0007] To achieve the above objectives, the present invention provides, on the one hand, a high-reliability 2×2 microwave switch circuit, comprising a first RF input port, a second RF input port, a first RF output port, a second RF output port, and eight independent paths; the first RF input port is connected to the first RF output port and the second RF output port respectively via two of the independent paths, and the second RF input port is connected to the first RF output port and the second RF output port respectively via two of the independent paths, each of the independent paths comprising at least one controllable series switch and at least one parallel switch; the circuit adopts a dual-path redundant topology, dynamically switching the on / off states of the independent paths via a two-bit control word; wherein the first control word is used to select a primary channel path, and the second control word is used to disconnect a specified switch group on a redundant path when a switch fails.

[0008] Optionally, each pair of RF input ports and RF output ports is connected via a set of independent paths;

[0009] One of the independent paths includes a first series switch tube, a second series switch tube, a first parallel switch tube, and a second parallel switch tube, wherein the first series switch tube and the second series switch tube are connected in series, and one end of the first parallel switch tube and the second parallel switch tube are connected between the first series switch tube and the second series switch tube and the other end are grounded;

[0010] The other independent path includes a third series switch tube, a fourth series switch tube, a third parallel switch tube and a fourth parallel switch tube, the third series switch tube and the fourth series switch tube are connected in series, one end of the third parallel switch tube and the fourth parallel switch tube are connected between the third series switch tube and the fourth series switch tube and the other end is grounded.

[0011] Optionally, the first control word of the two-bit control word is 0 or 1. When the first control word is 0, it indicates that the first RF input port and the first RF output port are selected to be turned on, and the second RF input port and the second RF output port are selected to be turned on; when the first control word is 1, it indicates that the first RF input port and the second RF output port are selected to be turned on, and the second RF input port and the first RF output port are selected to be turned on.

[0012] Optionally, the second control word of the two-bit control word is 0 or 1. When the second control word is 0, it indicates that each of the series switch tubes and the parallel switch tubes on one independent path between each pair of RF input ports and RF output ports is disconnected; when the second control word is 1, it indicates that each of the series switch tubes and the parallel switch tubes on the other independent path between each pair of RF input ports and RF output ports is disconnected.

[0013] On the other hand, the present invention further provides a control method for a 2×2 microwave switch circuit, the control method being used to control the high-reliability 2×2 microwave switch circuit as described above, comprising the steps of:

[0014] Detect the failure status of the switch tube;

[0015] Based on the failure state of the switch tube, a first control word of the two-bit control word is selected to switch the main path, and a second control word of the two-bit control word is selected to disconnect the redundant switch group on the failure path.

[0016] The high-reliability 2×2 microwave switch circuit described in the present invention includes a first RF input port, a second RF input port, a first RF output port, a second RF output port, and eight independent paths. Each RF input port is connected to the RF output port via two independent paths, each of which includes at least one series switch and at least one parallel switch. The circuit adopts a dual-path redundant topology and dynamically switches the on / off state of the independent paths using a two-bit control word. The first control word is used to select the main channel path, and the second control word is used to disconnect the specified switch group on the redundant path when the switch fails. The present invention also provides a control method for a 2×2 microwave switch circuit. As such, the present invention can address the problems of single-point failure of ports in traditional 2×2 microwave switch circuits and the inability of adding control words to reduce their failure probability, effectively reducing the circuit failure rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of the traditional 2×2 microwave switch circuit structure;

[0018] Figure 2 A schematic structural diagram of the high-reliability 2×2 microwave switch circuit provided in one embodiment of the present invention;

[0019] Figure 3 A schematic diagram of simulation analysis of normal working state of some independent paths of the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0020] Figure 4 A schematic diagram of simulation analysis of normal working state of some independent paths of the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0021] Figure 5 A schematic diagram of simulation analysis after short-circuit failure of some series-connected switch tubes in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0022] Figure 6A schematic diagram of simulation analysis after short-circuit failure of some series-connected switch tubes in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0023] Figure 7 A schematic diagram of simulation analysis after short-circuit failure of some series-connected switch tubes in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0024] Figure 8 A schematic diagram of simulation analysis after short-circuit failure of some series-connected switch tubes in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0025] Figure 9 A schematic diagram of simulation analysis after short-circuit failure of some parallel switches in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0026] Figure 10 A schematic diagram of simulation analysis after short-circuit failure of some parallel switches in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0027] Figure 11 A schematic diagram of simulation analysis after short-circuit failure of some parallel switches in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0028] Figure 12 A schematic diagram of simulation analysis after short-circuit failure of some parallel switches in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0029] Figure 13 A schematic diagram of simulation analysis after some series switches of the high-reliability 2×2 microwave switch circuit fail in an open circuit state according to an embodiment of the present invention;

[0030] Figure 14 A schematic diagram of simulation analysis after some series switches of the high-reliability 2×2 microwave switch circuit fail in an open circuit state according to an embodiment of the present invention;

[0031] Figure 15 A schematic diagram of simulation analysis after some series switches of the high-reliability 2×2 microwave switch circuit fail in an open circuit state according to an embodiment of the present invention;

[0032] Figure 16 A schematic diagram of simulation analysis after some series switches of the high-reliability 2×2 microwave switch circuit fail in an open circuit state according to an embodiment of the present invention;

[0033] Figure 17A schematic diagram of simulation analysis after open-circuit failure of some parallel switches in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0034] Figure 18 A schematic diagram of simulation analysis after open-circuit failure of some parallel switches in the high-reliability 2×2 microwave switch circuit provided by one embodiment of the present invention;

[0035] Figure 19 This is a flowchart of the steps of the control method of the 2×2 microwave switch circuit provided by one embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0037] It should be noted that references to "one embodiment," "an embodiment," "an example embodiment," etc., in this specification indicate that the described embodiment may include specific features, structures, or characteristics, but not every embodiment must include these specific features, structures, or characteristics. Furthermore, such references do not necessarily refer to the same embodiment. Furthermore, when specific features, structures, or characteristics are described in conjunction with an embodiment, whether or not explicitly described, it is understood that incorporating such features, structures, or characteristics into other embodiments is within the knowledge of those skilled in the art.

[0038] In addition, certain words are used in the specification and subsequent claims to refer to specific components or parts. It should be understood by those with ordinary knowledge in the relevant field that manufacturers may use different nouns or terms to refer to the same component or part. This specification and subsequent claims do not use differences in names as a way to distinguish components or parts, but rather use differences in the functions of components or parts as the criteria for distinction. The words "including" and "comprising" mentioned throughout the specification and subsequent claims are open-ended terms and should be interpreted as "including but not limited to". In addition, the word "connect" here includes any direct and indirect electrical connection means. Indirect electrical connection means include connection through other devices.

[0039] See also Figure 1In the traditional 2×2 microwave switch circuit topology, the input ports are RF1 and RF2, and the output ports are RF3 and RF4. There are two series switches (FET1 and FET4) and two parallel switches (FET2 and FET3) on one path from RF1 to RF3 (4). The following will analyze the impact of the failure of the switch on the entire circuit. Since the topology is symmetrical from top to bottom and from left to right, only the RF1-RF3 path is analyzed, and the situation of other paths is the same.

[0040] Traditional 2×2 microwave switch circuit control method: To connect RF1-RF3, a 1-bit control word is required to simultaneously close the switch tube FET1, open FET2, open FET3, close FET4, and open the series tube and close the parallel tube in the RF1-RF4 path. The current traditional 2×2 microwave switch circuit control method is shown in Table 1:

[0041] Table 1:

[0042]

[0043] Considering the case where only one switch tube fails due to short circuit, the failure analysis results of the traditional 2×2 microwave switch circuit (1-bit control word) are shown in Table 2.

[0044] Table 2:

[0045]

[0046]

[0047] In the table, √ indicates that the conduction and isolation states do not change, and × indicates that the conduction state changes to the isolation state.

[0048] In the following, series switching tubes and parallel switching tubes will be represented as series tubes and parallel tubes respectively.

[0049] When the series transistor FET1 fails due to a short circuit, the switch is in a normally closed state, and the RF1-RF3 path is not affected (RF2 can only connect to RF4 at this time); however, if RF1 is to form a path with RF4, because FET1 is in a failed closed state, the FET2 switch must be controlled to be open. Otherwise, the loads on the two paths of the RF1 port will be mismatched, and the input signal of the RF1 port will experience very large insertion loss before reaching the RF4 port, seriously degrading the signal quality. Therefore, if the RF1-RF4 path is to function properly when FET1 fails, the ability to individually control the closure of the parallel transistors (FET2 and FET3) is required.

[0050] If the series transistor FET4 fails due to a short circuit, the situation is similar to that of FET1. The RF1-RF3 path remains unaffected (RF2 can only communicate with RF4). To maintain the RF2-RF3 path, the ability to individually control the closure of the parallel transistors (FET2 and FET3) is required; the control method is the same as in the table above.

[0051] When the parallel tube FET2 or FET3 fails due to short circuit, the switch is in a normally closed state, and the RF1-RF4 path will not be affected (RF2 can only be connected to RF3 at this time); no path can be formed between RF1 and RF3.

[0052] According to the 8-state equal probability distribution, in the case of a 1-bit control word: when the control word is 0, the failure rate is 50%, and when the control word is 1, the failure rate is 25%; (total failure rate: 50% * 50% + 50% * 25% = 37.5%).

[0053] If the series tube fails due to short circuit, the length of the control word can be increased to control the parallel tube separately to improve the reliability of the switch; if the parallel tube fails due to short circuit or the series tube fails due to open circuit, the circuit function loss is inevitable; if the parallel tube fails due to open circuit, the circuit logic function is not affected.

[0054] After adding the control word, the failure analysis results of the traditional 2×2 microwave switch circuit are shown in Table 3:

[0055] Table 3:

[0056]

[0057]

[0058] In the second control word, 0 means maintaining the original state; 1 means changing the state of the parallel tube (on the failure path). Based on the eight equally probabilistic distributions, for a two-bit control word, the failure rate is 50% for a control word of 00, 75% for a control word of 01, 25% for a control word of 10, and 0% for a control word of 11. The total failure rate is: 25% * (50% + 75% + 25% + 0%) = 37.5%.

[0059] As can be seen, after a switch fails, the failure rate of a conventional 2×2 microwave switch circuit is 37.5% under different control word conditions. However, increasing the control word cannot solve the high failure probability of the conventional 2×2 microwave switch circuit. To address this technical problem, the present invention provides a highly reliable 2×2 microwave switch circuit.

[0060] Before describing the embodiments of the present invention in detail, the technical concept of the present invention is first briefly described: a redundant path design is adopted to construct multiple independent signal paths between RF ports, each path is configured with a series switch tube and a parallel switch tube, and when any switch tube fails, it can switch to the backup path. The 2-bit control word design is optimized, the first bit selects the main channel path, and the second bit, when a short circuit or open circuit failure of the switch tube is detected, isolates the failed path and enables the backup path by disconnecting the specific switch tube group on the redundant path. Through the above design, the circuit can still maintain the signal transmission function when the components fail, improve the overall failure rate, and significantly improve the reliability of the microwave switch in extreme environments.

[0061] The specific principles of the high-reliability 2×2 microwave switch circuit of the present application are described below with reference to specific embodiments.

[0062] Figure 2 A high-reliability 2×2 microwave switch circuit provided by an embodiment of the present invention is shown, including a first RF input port RF1, a second RF input port RF2, a first RF output port RF3, a second RF output port RF4, and eight independent paths (L1 to L8); the first RF input port RF1 is connected to the first RF output port RF3 and the second RF output port RF4 via two independent paths, specifically, the first RF input port RF1 is connected to the first RF output port RF3 via two independent paths L1 to L2, the first RF input port RF1 is connected to the second RF output port RF4 via two independent paths L7 to L8; the second RF input port RF2 is connected to the first RF output port RF3 and the second RF output port RF4 via two independent paths Specifically, the second RF input port RF2 is connected to the first RF output port RF3 via two independent paths L5-L6, and the second RF input port RF2 is connected to the second RF output port RF4 via two independent paths L3-L4; each independent path includes at least one controllable series switch tube and at least one parallel switch tube; the circuit adopts a dual-path redundant topology structure, that is, the two independent paths between each pair of RF input ports and RF output ports constitute a dual-path redundant topology structure, and the corresponding independent path can be switched between the RF input port and the RF output port; and this embodiment further dynamically switches the on-off state of the independent path through a two-bit control word; wherein the first control word is used to select the main channel path, and the second control word is used to disconnect the specified switch tube group on the redundant path when the switch tube fails.

[0063] In a specific implementation, each pair of RF input ports and RF output ports is connected via a set of independent paths; one independent path includes a first series switch tube, a second series switch tube, a first parallel switch tube, and a second parallel switch tube, the first series switch tube and the second series switch tube are connected in series, one end of the first parallel switch tube and the second parallel switch tube are connected between the first series switch tube and the second series switch tube, and the other end is grounded; the other independent path includes a third series switch tube, a fourth series switch tube, a third parallel switch tube, and a fourth parallel switch tube, the third series switch tube and the fourth series switch tube are connected in series, one end of the third parallel switch tube and the fourth parallel switch tube are connected between the third series switch tube and the fourth series switch tube, and the other end is grounded. The specific structural features of the dual paths between each pair of RF input ports and RF output ports are the same, see Figure 2 Taking the dual paths L1-L2 between the first RF input port RF1 and the first RF output port RF3 as an example, the transistors are numbered as follows: the independent path L1 includes the first series switch tube 1, the second series switch tube 3, the first parallel switch tube 2, and the second parallel switch tube 8; the independent path L2 includes the third series switch tube 4, the fourth series switch tube 6, the third parallel switch tube 5, and the fourth parallel switch tube 7.

[0064] The reliability simulation analysis of the circuit is as follows:

[0065] Transistor core failures are mainly short-circuit failures and open-circuit failures. Therefore, three simulation comparisons are performed: normal working state, a short-circuit state of a certain transistor core, and an open-circuit state of a certain transistor core, as shown below:

[0066] Simulation analysis of normal working status:

[0067] When conducting in the RF1~RF3 direction, the L1 and L2 paths are opened for simulation respectively, and the results are as follows Figure 3 As shown in the diagram on the left;

[0068] When the RF2~RF4 direction is turned on, the L3 or L4 path is opened for simulation respectively, and the results are as follows Figure 3 As shown in the chart on the right;

[0069] When conducting RF1~RF3 / RF2~RF4 direction, L1+L2 path is opened at the same time for simulation / L3+L4 path is opened at the same time for simulation, the results are as follows Figure 4 shown.

[0070] Simulation analysis of a die short circuit state:

[0071] When a series tube of FET1 / FET3 / FET4 / FET6 fails due to short circuit, the simulation analysis results are as follows: Figures 5 to 8 As shown;

[0072] When one of FET2 / FET5 / FET7 / FET8 fails due to short circuit, the simulation analysis results are as follows: Figures 9 to 12 shown.

[0073] Simulation analysis of the open circuit state of a certain die:

[0074] When one of the series transistors FET1 / FET3 / FET4 / FET6 fails due to an open circuit, the simulation analysis results are as follows: Figures 13 to 16 As shown;

[0075] When one of the parallel transistors FET2 / FET5 / FET7 / FET8 fails due to an open circuit, the simulation analysis results are as follows: Figures 17 and 18 shown.

[0076] The failure analysis results of the transistor core are shown in Table 4 below.

[0077] Table 4:

[0078]

[0079]

[0080] It should be noted that: √: the conduction and isolation states do not change, ×: the conduction state changes to the isolation state

[0081] A preliminary analysis of the failure cause is as follows: Taking the L1 and L2 paths as examples, there are eight transistors in total: four series transistors, FET1 / FET3 / FET4 / FET6, and four parallel transistors, FET2 / FET5 / FET7 / FET8. Failure modes are categorized as short circuit and open circuit. Short circuit failure is typically caused by voltage breakdown, while open circuit failure is typically caused by thermal burnout. Taking FET1 in the L1 path as an example, when a short circuit failure occurs, the transistor shorts, which does not affect the conduction of the L1 path. However, when switching to the L2 path, the signal leaks from FET1-FET2 to ground, causing RF1-RF3 to become isolated when the L2 path is selected. RF1-RF3 conduction can be maintained by simultaneously turning on both the L1 and L2 paths. Similarly, when FET1 shorts, RF1-RF4 cannot conduct properly. Taking FET2 as an example, when the parallel transistor shorts, the conduction state of the parallel transistor L1 is affected. Functionality can be maintained by switching to L2. A short circuit in parallel with FET2 does not affect the normal operation of RF2-RF3 and RF1-RF4. In the event of an open-circuit failure, taking FET1 as an example, the transistor opens, disconnecting the L1 path, but this does not affect the L2 path, nor does it affect the normal operation of RF2-RF3 and RF1-RF4. For parallel transistors, an open-circuit failure in FET2, for example, does not affect the normal operation of any path.

[0082] The first control word of the two-bit control word in this embodiment is 0 or 1. When the first control word is 0, it indicates that the first RF input port RF1 and the first RF output port RF3 are selected to be turned on, and the second RF input port RF2 and the second RF output port RF4 are selected to be turned on; when the first control word is 1, it indicates that the first RF input port RF1 and the second RF output port RF4 are selected to be turned on, and the second RF input port RF2 and the first RF output port RF3 are selected to be turned on.

[0083] The above analysis is based on a traditional 1-bit control word controlling the switch state: 0 indicates RF1-RF3 and RF2-RF4 are both on, and 1 indicates RF1-RF4 and RF2-RF3 are both on. The failure probability is 25% × (25% + 0 + 12.5% + 12.5%) = 12.5%.

[0084] In this regard, this embodiment further reduces the failure probability by optimizing the design of the control word.

[0085] The second control word of the two-bit control word is 0 or 1. When the second control word is 0, it indicates that all series switches and parallel switches on one independent path between each pair of RF input ports and RF output ports are disconnected; when the second control word is 1, it indicates that all series switches and parallel switches on the other independent path between each pair of RF input ports and RF output ports are disconnected. For example, for the dual path L1-L2 between the first RF input port RF1 and the first RF output port RF3, when the second control word is 0, it indicates that the transistors on the L2 path are disconnected, and when the second control word is 1, it indicates that the transistors on the L1 path are disconnected. Specifically, this embodiment designs a two-bit control word to control the circuit of the present invention, wherein the first control word has the same meaning as the traditional design, that is, 0 indicates that RF1-RF3 are turned on and RF2-RF4 are turned on, and 1 indicates that RF1-RF4 are turned on and RF2-RF3 are turned on. The second control word controls the disconnection of certain transistors, that is, 0 indicates that FET4, FET5, FET6, and FET7 are all disconnected, and 1 indicates that FET1, FET2, FET3, and FET8 are all disconnected. The failure result statistics under this control word are shown in Table 5. The failure probability is 12.5%×(25%+0+25%+0+0+6.25%+0+6.25%)=7.8125%.

[0086] Table 5:

[0087]

[0088]

[0089] The reliability analysis concluded that, based on the statistical analysis of the failure simulation results, the dual-path design of the 2×2 microwave switch circuit enables the circuit to continue operating normally by disconnecting the transistors through the second control word when an open-circuit or short-circuit failure occurs, significantly improving the chip's normal operating rate.

[0090] This embodiment addresses the single-point failure problem of transistor failure in existing 2×2 microwave switch circuits by adopting an innovative dual-path topology. This reduces the circuit failure rate from 37.5% to 12.5% without changing the control word state. Furthermore, this embodiment addresses the problem that the failure rate of existing 2×2 microwave switch circuits cannot be reduced when adding a control word. This embodiment adopts a dual-path topology and reduces the circuit failure rate from 12.5% to 7.8125% by adding a second control word.

[0091] Figure 19 A control method for a 2×2 microwave switch circuit provided by another embodiment of the present invention is shown. The control method is used to control the high-reliability 2×2 microwave switch circuit as described in the previous embodiment, comprising the steps of:

[0092] S101: Detect the failure state of the switch tube.

[0093] S102: Selecting a first control word of a two-bit control word based on the failure state of the switch tube to switch the main path and selecting a second control word of the two-bit control word to disconnect the redundant switch group on the failure path.

[0094] That is, this embodiment adopts a dynamic control strategy and adopts a 2-bit control word. The first bit selects the main channel path (0 is RF1-RF3 / RF2-RF4, 1 is RF1-RF4 / RF2-RF3), and the second bit, when a short circuit or open circuit failure of the switch tube is detected, isolates the failed path and enables the backup path by disconnecting a specific switch tube group (such as FET4-FET7 or FET1-FET3, FET8) on the redundant path.

[0095] In summary, the high-reliability 2×2 microwave switch circuit described in the present invention includes a first RF input port, a second RF input port, a first RF output port, a second RF output port, and eight independent paths; each RF input port and RF output port are connected via two independent paths, and each independent path includes at least one series switch tube and at least one parallel switch tube; the circuit adopts a dual-path redundant topology structure, and dynamically switches the on-off state of the independent path through a two-bit control word; wherein the first control word is used to select the main channel path, and the second control word is used to disconnect the specified switch tube group on the redundant path when the switch tube fails. The present invention also provides a control method for a 2×2 microwave switch circuit. In this way, the present invention can solve the problems of single-point failure of ports in traditional 2×2 microwave switch circuits and the inability to reduce the failure probability by adding control words, thereby effectively reducing the circuit failure rate.

[0096] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art may make various corresponding changes and modifications based on the present invention, but these corresponding changes and modifications should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. A high reliability 2×2 microwave switch circuit, characterized in that: The circuit comprises a first RF input port, a second RF input port, a first RF output port, a second RF output port, and eight independent paths; the first RF input port is connected to the first RF output port and the second RF output port respectively via two of the independent paths, and the second RF input port is connected to the first RF output port and the second RF output port respectively via two of the independent paths; each independent path comprises at least one controllable series switch tube and at least one controllable parallel switch tube; the circuit adopts a dual-path redundant topology structure, and dynamically switches the on / off state of the independent paths via a two-bit control word; wherein the first control word is used to select the main channel path, and the second control word is used to disconnect a specified switch tube group on the redundant path when a switch tube fails.

2. The high-reliability 2×2 microwave switch circuit according to claim 1, characterized in that: Each pair of RF input ports and RF output ports is connected via a set of independent paths; One of the independent paths includes a first series switch, a second series switch, a first parallel switch, and a second parallel switch, wherein the first series switch and the second series switch are connected in series, and one end of the first parallel switch and the second parallel switch are connected between the first series switch and the second series switch, and the other end thereof are grounded; The other independent path includes a third series switch tube, a fourth series switch tube, a third parallel switch tube and a fourth parallel switch tube, the third series switch tube and the fourth series switch tube are connected in series, one end of the third parallel switch tube and the fourth parallel switch tube are connected between the third series switch tube and the fourth series switch tube and the other end is grounded.

3. The high-reliability 2×2 microwave switch circuit according to claim 1, characterized in that: The first control word of the two-bit control word is 0 or 1. When the first control word is 0, it indicates that the first RF input port and the first RF output port are selected to be turned on, and the second RF input port and the second RF output port are selected to be turned on; when the first control word is 1, it indicates that the first RF input port and the second RF output port are selected to be turned on, and the second RF input port and the first RF output port are selected to be turned on.

4. The high-reliability 2×2 microwave switch circuit according to claim 1, characterized in that: The second control word of the two-bit control word is 0 or 1. When the second control word is 0, it indicates that the series switch tubes and the parallel switch tubes on one independent path between each pair of RF input ports and RF output ports are disconnected; when the second control word is 1, it indicates that the series switch tubes and the parallel switch tubes on the other independent path between each pair of RF input ports and RF output ports are disconnected.

5. A control method for a 2×2 microwave switch circuit, characterized in that: The control method is used to control the high-reliability 2×2 microwave switch circuit according to any one of claims 1 to 4, comprising the steps of: Detect the failure status of the switch tube; Based on the failure state of the switch tube, a first control word of the two-bit control word is selected to switch the main path, and a second control word of the two-bit control word is selected to disconnect the redundant switch group on the failure path.

Images