Gallium oxide MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure with p-type buried layer and preparation method thereof

By introducing p-type buried layer and heterojunction diode structure into the gallium oxide MOSFET structure, the gate dielectric premature breakdown problem of gallium oxide-based vertical field effect transistor is solved, and the voltage withstandness and reverse conduction characteristics of the device are improved.

CN120456594APending Publication Date: 2025-08-08FUZHOU UNIV
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Patent Information

Application Number
CN202510598945.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-09
Publication Date
2025-08-08

AI Technical Summary

Technical Problem

Due to the lack of effective p-type doping schemes, existing gallium oxide-based vertical field effect transistors cause device gate dielectric to break down ahead of schedule at high voltage, affecting the device's withstand voltage level and reverse power consumption.

Method used

A gallium oxide MOSFET structure with a p-type buried layer is designed. By introducing a p-type buried layer at the device terminal, the electric field peak at the corner of the gate dielectric is transferred to the p-type buried layer, and combined with a heterojunction diode structure, reverse current transmission is achieved and reverse conduction power consumption is reduced.

Benefits of technology

The blocking characteristics of gallium oxide vertical MOSFET are improved, prevent gate dielectric breakdown, reduce reverse conduction power consumption, and enhance the device's voltage resistance.

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Abstract

The invention relates to a gallium oxide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure with a p-type buried layer and a preparation method of the gallium oxide MOSFET structure. The gallium oxide MOSFET structure consists of MOSFET regions and heterojunction diode regions which are alternately arranged along the transverse direction, the MOSFET region comprises a drain metal layer, a highly-doped n-type gallium oxide substrate, a lightly-doped n-type gallium oxide epitaxial layer, a current barrier layer, a highly-doped n-type gallium oxide epitaxial layer, a p-type semiconductor layer, a gate dielectric layer, a gate metal layer, an oxide dielectric layer and a source metal layer; a drain electrode metal layer, a highly-doped n-type gallium oxide substrate, a lightly-doped n-type gallium oxide epitaxial layer, a p-type semiconductor layer and a source electrode metal layer are expanded on the left side and the right side of the MOSFET region to form a drain electrode metal layer, a highly-doped n-type gallium oxide substrate, a lightly-doped n-type gallium oxide epitaxial layer, a p-type semiconductor layer and a source electrode metal layer of the heterojunction diode region. According to the gallium oxide vertical field effect transistor, advanced breakdown of a gate medium of a device can be improved, the blocking characteristic of the gallium oxide vertical field effect transistor is enhanced, and higher voltage resistance and lower reverse power consumption are achieved.
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