Semiconductor structure

Abstract

The invention discloses a semiconductor structure. The semiconductor structure comprises a substrate and a semiconductor lamination layer, the substrate is provided with a first surface and a second surface, the first surface is provided with a first protruding unit and a second protruding unit which are arranged in the horizontal direction, and the second surface is provided with a third protruding unit and a fourth protruding unit which are arranged in the horizontal direction. In the vertical direction, the first protruding unit corresponds to the third protruding unit, and the second protruding unit corresponds to the fourth protruding unit. The semiconductor stack is connected to the first surface. Wherein, when the second surface is irradiated by a light beam parallel to the vertical direction, the light beam can form substantially uniform energy distribution on the first surface.

Description

Technical Field

[0001] The present invention relates to a semiconductor structure, in particular to a semiconductor structure comprising a substrate and a semiconductor stack. Background Art

[0002] Light Emitting Diode (LED) is a new type of optoelectronic semiconductor component with advantages such as small size, low power consumption, high brightness, long life, and fast response speed. It has been regarded as the mainstream technology for the next generation of lighting equipment and display devices.

[0003] After the grains of the light-emitting diode are formed on the growth substrate, the growth substrate is often peeled off from the light-emitting diode to reduce the size of the component. Laser lift-off (LLO) technology is a commonly used peeling technology, which uses a laser of a specific wavelength to irradiate the junction of the growth substrate and the light-emitting diode in a direction perpendicular to the incident surface of the growth substrate. The material at the junction will be heated by the laser irradiation, causing the bond to break and vaporize, thereby achieving the purpose of separation. However, when a patterned sapphire substrate (PSS) is used as a growth substrate, the concave and convex surface morphology of the growth substrate will cause uneven energy distribution of the laser on the junction. The junction area with insufficient energy cannot be vaporized and separated, and the junction area with too high energy will damage the semiconductor structure of the light-emitting diode. Summary of the Invention

[0004] The present invention aims to provide a semiconductor structure and a method and system for processing the semiconductor structure, which can improve the problems of the prior art.

[0005] According to one embodiment of the present invention, a method for processing a semiconductor structure includes providing a semiconductor structure comprising a substrate and a semiconductor stack. The substrate has a first surface connected to the semiconductor stack, and the first surface extends horizontally and has a first protrusion and a second protrusion adjacent to each other. The first protrusion includes a top and a first inclined surface and a second inclined surface located on either side of the top. The method also includes providing a light beam that transmits through the substrate and illuminates the first surface to separate the substrate from the semiconductor stack. The light beam includes a first sub-beam directed toward the first inclined surface, and the first sub-beam is directed toward the first inclined surface substantially perpendicular to the first inclined surface.

[0006] According to one embodiment of the present invention, a semiconductor structure includes a substrate and a semiconductor stack. The substrate has a first surface and a second surface parallel to a horizontal direction and opposite to each other in a vertical direction. The first surface has a first protrusion unit and a second protrusion unit adjacent to each other. The semiconductor stack is connected to the first surface. The second surface has a third protrusion unit and a fourth protrusion unit adjacent to each other, the first protrusion unit corresponding to the third protrusion unit in position, and the second protrusion unit corresponding to the fourth protrusion unit in position. The second surface is illuminated by a light beam in a vertical direction, which transmits the substrate and forms a substantially uniform energy distribution on the first surface.

[0007] According to one embodiment of the present invention, a semiconductor structure processing system includes a laser source, a carrier platform, and an optical system. The laser source is used to provide a light beam. The carrier platform is used to support a semiconductor structure, wherein the semiconductor structure includes a substrate and a semiconductor stack, wherein the substrate has a first surface connected to the semiconductor stack, and the first surface has a plurality of raised units arranged in an array. The optical system includes a lens array for modulating the light beam so that the light beam transmits through the substrate and forms a substantially uniform energy distribution on the first surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] To facilitate understanding, the present disclosure is described in conjunction with the accompanying drawings and detailed descriptions. The present disclosure is described in detail using the accompanying drawings and specific embodiments of the present disclosure, and the principles of operation of the embodiments are explained. For clarity, the features in the drawings may not be drawn to scale, and the dimensions of some features in the drawings may be intentionally exaggerated or reduced.

[0009] Figure 1 is a cross-sectional view of a semiconductor structure according to an embodiment of the present invention;

[0010] Figure 2 is the energy distribution diagram of the substrate irradiated by the light beam;

[0011] Figure 3 is a cross-sectional view of a semiconductor structure according to an embodiment of the present invention;

[0012] Figure 4 and Figure 5 are cross-sectional views of semiconductor structures according to different embodiments of the present invention;

[0013] Figure 6 FIG. 1 is a schematic diagram of a semiconductor structure processing system according to an embodiment of the present invention.

[0014] Explanation of symbols

[0015] 10: Semiconductor structure

[0016] 12: Substrate

[0017] 14: Semiconductor stacking

[0018] 120, 120': raised unit

[0019] 122: First protruding unit

[0020] 124: Second raised unit

[0021] 126: The third raised unit

[0022] 128: Fourth raised unit

[0023] 200: Processing system

[0024] 210: Laser source

[0025] 220: Optical System

[0026] 222: Beam Expander

[0027] 224: Lens Array

[0028] 226: Light-shielding mask

[0029] 228: Reduced projection optical system

[0030] 230: Carrying platform

[0031] 122a, 124a, 126a, 126d, 128a, 128d: Top

[0032] 122b, 124b: first inclined surface

[0033] 122c, 124c: Second inclined surface

[0034] 126b, 128b: third slope

[0035] 126c, 128c: Fourth slope

[0036] 12n: Second surface

[0037] 12s: First surface

[0038] A: Angle of incidence

[0039] D1: horizontal direction

[0040] D2: vertical direction

[0041] E1, E2, E3, E4: Energy distribution state

[0042] H1, H2: height

[0043] LT, LT1, LT2, LT3: Beam

[0044] L1: first sub-beam

[0045] L2: Second sub-beam

[0046] L3: The third sub-beam

[0047] L4: The fourth sub-beam

[0048] M1, M2, M3: reflectors

[0049] P: Section

[0050] NX: Normals

[0051] R1, R2: Concave

[0052] S1, S2: Spacing

[0053] W1, W2: width

[0054] T: thickness DETAILED DESCRIPTION

[0055] The present invention provides several different embodiments that can be used to implement different features of the present invention. For simplicity of description, examples of specific components and arrangements are also described. These embodiments are provided for illustrative purposes only and are not intended to be limiting. The various embodiments of the present invention may use repeated reference symbols and / or textual notations. These repeated reference symbols and textual notations are used for brevity and clarity and are not intended to indicate a relationship between different embodiments and / or configurations.

[0056] Furthermore, when used herein, spatially relative terms such as "below," "lower," "down," "above," "upper," "top," "bottom," and similar terms are used to describe, for ease of description, the relative relationship of one element or feature to another (or multiple) elements or features in the accompanying drawings. In addition to the orientation shown in the accompanying drawings, these spatially relative terms are also used to describe the orientation of each element during use and operation. As the orientation of each element changes (rotated 90 degrees or in other orientations), the descriptions describing its orientation should be interpreted in a similar manner.

[0057] Although the present invention uses terms such as first, second, and third to describe elements, components, regions, layers, and / or sections, it should be understood that these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, and / or section from another element, component, region, layer, and / or section, and do not imply or represent any preceding ordinal number of the elements, nor do they represent the order in which one element is arranged relative to another element, or the order in which they are manufactured. Therefore, without departing from the scope of the specific embodiments of the present invention, the first element, component, region, layer, or section discussed below may also be referred to as the second element, component, region, layer, or section.

[0058] The terms "about," "approximately," "substantially," or "substantially" mentioned herein generally mean within 20% of a given value or range, such as within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5%. It should be noted that the quantities provided in the specification are approximate quantities, that is, even without the specific description of "about" or "substantially," the meaning of "about" or "substantially" may still be implied. If the first direction is perpendicular or "substantially" perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel or "substantially" parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0059] Although the invention of the present invention is described below by specific embodiments, the inventive principle of the present invention can also be applied to other embodiments. In addition, in order not to obscure the spirit of the present invention, certain details will be omitted.

[0060] The present invention relates to a semiconductor structure and a method and system for processing the semiconductor structure. Compared with the existing method that produces uneven laser energy distribution on the dissociation surface, the semiconductor structure or its processing method of the embodiment of the present invention can provide uniform energy distribution on the dissociation surface, thereby improving the dissociation yield.

[0061] Please refer to Figure 1 . Figure 1 (a) is a cross-sectional view of a semiconductor structure 10 according to an embodiment of the present invention. Figure 1(b) is a schematic diagram of the incident angle A of the light beam LT. The processing method of the present invention includes providing a semiconductor structure 10, which includes a substrate 12 and a semiconductor stack 14. For ease of explanation, the present invention defines the direction for measuring the thickness T of the substrate 12 as the vertical direction D2, and the extension direction of the surface of the substrate 12 as the horizontal direction D1. The substrate 12 has a first surface 12s and a second surface 12n extending along the horizontal direction D1 and opposite to each other in the vertical direction D2. The first surface 12s has a concave-convex surface topography and is connected to the semiconductor stack 14. In one embodiment, the substrate 12 has a sidewall connecting the first surface 12s and the second surface 12n. The sidewall extends along the vertical direction D2 and is substantially perpendicular to the horizontal direction D1. A light beam LT is provided. The light beam LT transmits through the substrate 12 and irradiates the first surface 12s. The light beam LT irradiates the interface between the substrate 12 and the semiconductor stack 14 in a direction substantially perpendicular to the first surface 12s, so that the light beam LT has a substantially uniform energy distribution at the interface between the substrate 12 and the semiconductor stack 14. In one embodiment, the energy of the light beam LT can cause changes in the interface material between the semiconductor stack 14 and the first surface 12 s, such as bond breaking, vaporization, melting, etc., thereby separating the substrate 12 and the semiconductor stack 14 .

[0062] The first surface 12s of the substrate 12 has a plurality of raised elements 120 arranged in a regular array. The plurality of raised elements 120 include a plurality of first raised elements 122 and a plurality of second raised elements 124 arranged in a staggered manner. A recess R1 is formed between two adjacent raised elements 122 and 124. Each of the first and second raised elements 122 and 124 has a tapered cross-section. The tapered cross-section of the first raised element 122 includes a top 122a and first and second inclined surfaces 122b and 122c on either side of the top 122a. The tapered cross-section of the second raised element 124 includes a top 124a and first and second inclined surfaces 124b and 124c on either side of the top 124a. In one embodiment, the width W1 of the first and second raised elements 122 and 124 in the horizontal direction D1 is approximately 2.8 microns, and the height H1 in the vertical direction D2 is approximately 1.75 microns. The distance S1 between two adjacent protrusion units 122 and 124 in the horizontal direction D1 is about 3 microns. The distance S1 can be the horizontal distance between the two tops 122a and 124a. Figure 1(a) of FIG. In another embodiment, the width W1 of the protruding units 122 and 124 is approximately 2.6 microns, the height H1 is approximately 1.6 microns, and the spacing S1 between two adjacent protruding units 122 and 124 is approximately 3 microns. In one embodiment, the angles between the first inclined surfaces 122b and 124b and the second inclined surfaces 122c and 124c and the horizontal direction D1 are between 66 degrees and 45 degrees. In one embodiment, the first inclined surfaces 122b and 124b and the second inclined surfaces 122c and 124c have varying angles with the horizontal direction D1, and the inclined surfaces 122b, 124b, 122c, and 124c can be continuous curved surfaces or curved surfaces with second-order or multi-order curve transitions.

[0063] Light beam LT is emitted from substrate 12 toward semiconductor stack 14 toward first surface 12s. Semiconductor stack 14 connected to first surface 12s absorbs the energy of the light beam and heats up. When the temperature reaches the temperature at which the semiconductor stack 14 undergoes a dissociation reaction, the surface of semiconductor stack 14 connected to first surface 12s begins to decompose and separate from first surface 12s (for example, when the surface material of semiconductor stack 14 is gallium nitride, the surface material decomposes into gaseous nitrogen and liquid gallium). It is noteworthy that the light beam LT of the present invention is composed of multiple sub-beams whose incident directions correspond to the shape of the protruding units 120 on first surface 12s. For example, light beam LT includes a first sub-beam L1 emitted toward first inclined surface 122b, a second sub-beam L2 emitted toward second inclined surface 122c, a third sub-beam L3 emitted toward top 122a, and a fourth sub-beam L4 emitted toward recess R1. In one embodiment, first sub-beam L1 and second sub-beam L2 intersect within substrate 12.

[0064] like Figure 1 As shown in (b), the present invention defines the incident angle A of the light beam LT as the angle between the light beam LT and the normal NX of the tangent plane P at the point of incidence. In one embodiment, the incident angles A of the first and second sub-beams L1 and L2 are approximately 0 degrees. That is, the first sub-beam L1 is emitted toward the first inclined surface 122b in a direction substantially perpendicular to the first inclined surface 122b (i.e., the normal direction), and the second sub-beam L2 is emitted toward the second inclined surface 122c in a direction substantially perpendicular to the second inclined surface 122c (i.e., the normal direction). The third sub-beam L3 and the fourth sub-beam L4 are emitted toward the top 122a and the recess R1, respectively, in directions substantially perpendicular to the horizontal direction D1. In one embodiment, the incident angles A of the sub-beams L1, L2, L3, and L4 are less than 10 degrees.

[0065] Please refer to Figure 2 . Figure 2 (a) is an energy distribution diagram on two opposite sides of the substrate 12 after the substrate 12 is irradiated by a light beam when the semiconductor structure 10 is processed by conventional laser lift-off technology. Figure 2(b) is an energy distribution diagram of the substrate 12 on two opposite sides of the substrate after being irradiated by a light beam in one embodiment of the present invention. The two opposite sides of the substrate 12 include a first surface 12s and a second surface 12n, respectively. The light beam irradiates the second surface 12n and then penetrates the substrate 12 to reach the first surface 12s. Energy distribution states E1-E4 refer to the energy distribution states presented or measured on the first surface 12s and the second surface 12n when the light beam irradiates the substrate 12. The energy distribution states E1 and E4 present a roughly uniform energy distribution. The energy distribution states E2 and E3 are multiple regularly arranged circles, and the closer to the center of the circle, the higher the energy intensity, while the area between two adjacent circles presents a lower energy intensity. In traditional laser lift-off technology, a light beam with a uniform energy distribution state E1 is usually used to irradiate the second surface 12n, but after the light beam passes through the substrate 12 and reaches the first surface 12s, the light beam will form an uneven energy distribution state E2 on the first surface 12s. Among them, in the energy distribution state E2, the highest energy intensity appears at the top of the raised unit, that is, the center area of the circle in the figure. In one embodiment of the present invention, a plurality of sub-beams oriented in different directions are used to illuminate the second surface 12n, so that the light beam forms an uneven energy distribution state E3 on the second surface 12n. After the light beam passes through the substrate 12 and reaches the first surface 12s, the light beam will form a uniform energy distribution state E4 on the first surface 12s, that is, different parts of the first surface 12s (such as the slope of the protruding unit 120, the top and the recess R1 between the protruding units 120) have almost uniform energy intensities. Here, the so-called almost uniform or roughly uniform energy distribution means that the difference between the highest energy intensity and the lowest energy intensity is less than 20% of the highest energy intensity. In one embodiment, the highest energy intensity in the energy distribution state E3 (that is, the center area of the circle in the figure) is located at the thinnest part of the substrate 12, for example Figure 1 The recess R1 in (a) is located above the second surface 12n.

[0066] In one embodiment, substrate 12 is a growth substrate used to form semiconductor stack 14, and the material of substrate 12 includes silicon (Si), germanium (Ge), lithium aluminate (LiAlO2), zinc oxide (ZnO), silicon carbide (SiC), aluminum oxide (AlO), sapphire, gallium nitride (GaN), aluminum nitride (AlN), gallium arsenide (GaAs), or indium phosphide (InP). In one embodiment, substrate 12 is a patterned sapphire substrate (PSS) having a patterned surface, wherein the patterned surface is a first surface 12s and includes a plurality of protruding units 120. The wavelength of light beam LT should be compatible with the material of substrate 12, such that the absorption rate of substrate 12 is less than 30% when light beam LT passes through substrate 12. In one embodiment, when laser beam LT having a wavelength of 193 nm, 248 nm, or 355 nm is used to illuminate patterned sapphire substrate 12, the absorption rate of substrate 12 is less than 30%.

[0067] The semiconductor stack 14 is composed of multiple layers of stacked semiconductor materials, each of which may include a Group III-V semiconductor, such as a Group III nitride, a Group III phosphide, a Group III arsenide, or a Group III phosphoarsenide. In one embodiment, the semiconductor stack 14 includes a p-doped gallium nitride (GaN) layer, an undoped GaN layer, and an n-doped GaN layer. Methods for forming the semiconductor stack 14 include metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), physical vapor deposition (PVD), and liquid-phase epitaxy (LPE). To simplify the illustration, the multilayer structure of the semiconductor stack 14 is not shown in the figure. The semiconductor stack 14 can be processed into a semiconductor device, such as a light emitting diode die or an integrated circuit chip.

[0068] Figure 3 FIG. 1 is a cross-sectional view of a semiconductor structure 10 according to an embodiment of the present invention. Figure 3 and Figure 1The main difference is that the second surface 12n of the substrate 12 is also patterned and has a plurality of convex units 120' arranged in an array at equal intervals, and the convex units 120 of the first surface 12s and the convex units 120' of the second surface 12n are aligned in the vertical direction D2. When the light beam LT irradiates the second surface 12n of the substrate 12 along the vertical direction D2, the portion of the light beam LT that is directed toward the inclined surface of the convex unit 120' of the second surface 12n will be refracted and irradiate the interface between the first surface 12s and the semiconductor stack 14 in a direction substantially perpendicular to the first surface 12s, thereby obtaining a substantially uniform energy distribution at the interface. In other words, when the light beam LT is directed in a direction as shown in FIG. Figure 2 The energy distribution state E1 incident on Figure 3 When the substrate 12 is formed, the first surface 12s can still be obtained Figure 2 (b) shows the energy distribution state E4.

[0069] like Figure 3 As shown, the protrusion units 120' of the second surface 12n include alternating third protrusion units 126 and fourth protrusion units 128. The third protrusion unit 126 includes a top 126a and third and fourth inclined surfaces 126b and 126c located on either side of the top 126a. The fourth protrusion unit 128 includes a top 128a and third and fourth inclined surfaces 128b and 128c located on either side of the top 128a. In the vertical direction D2, the top 122a and the top 126a are opposite each other, the first inclined surface 122b and the third inclined surface 126b are opposite each other, the second inclined surface 122c and the fourth inclined surface 126c are opposite each other, the top 124a and the top 128a are opposite each other, the first inclined surface 124b and the third inclined surface 128b are opposite each other, and the second inclined surface 124c and the fourth inclined surface 128c are opposite each other. Furthermore, the recess R2 between the third and fourth protrusion units 126, 128 and the recess R1 between the first and second protrusion units 122, 124 are opposite to each other, and the spacing S2 between the third and fourth protrusion units 126, 128 in the horizontal direction D1 is substantially equal to the spacing S1 between the first and second protrusion units 122, 124 in the horizontal direction D1. In one embodiment, the protrusion units 120 and 120' are mirror-symmetrical along the horizontal direction D1. In another embodiment, the protrusion units 120 and 120' are mirror-symmetrical along the vertical direction D2.

[0070] like Figure 3As shown, when the light beam LT irradiates the semiconductor structure 10 along the vertical direction D2, a first sub-beam L1 of the light beam LT that enters the substrate 12 from the fourth inclined surface 126c is refracted onto the first inclined surface 122b. A second sub-beam L2 of the light beam LT that enters the substrate 12 from the third inclined surface 126b is refracted onto the second inclined surface 122c. In one embodiment, the first sub-beam L1 irradiates the fourth inclined surface 126c at a fourth incident angle and then irradiates the first inclined surface 122b at a first incident angle. The second sub-beam L2 irradiates the third inclined surface 126b at a third incident angle and then irradiates the second inclined surface 122c at a second incident angle. The first incident angle is less than the fourth incident angle, and the second incident angle is less than the third incident angle. In one embodiment, the first sub-beam L1 and the second sub-beam L2 intersect in the substrate 12. The third sub-beam L3 of the light beam LT, which enters the substrate 12 from the top surface 126a, is emitted substantially along the perpendicular direction D2 to the top surface 122a. The fourth sub-beam L4 of the light beam LT, which enters the substrate 12 from the recess R2, is emitted substantially along the perpendicular direction D2 to the recess R1. This embodiment utilizes the raised units 120' on the second surface 12n of the substrate 12 to refract the sub-beams, thereby reducing the incident angles of the sub-beams on the first surface 12s. This achieves a more uniform energy intensity distribution on the first surface 12s, thereby improving the issues of incomplete debonding or device structural damage encountered in conventional techniques.

[0071] The third and fourth protrusion units 126 and 128 have a height H2 in the vertical direction D2 and a width W2 in the horizontal direction D1. The height H2, width W2, and cross-sectional profile can be adjusted based on the thickness and material of the substrate 12 and can be the same as or different from the height H1, width W1, and cross-sectional profile of the first and second protrusion units 122 and 124. In one embodiment, the first and third protrusion units 122 and 128 have the same widths W1 and W2, but the height H1 is greater than the height H2. In another embodiment, the height H1 is the same as the height H2, but the width W2 is greater than the width W1.

[0072] Figure 4 and Figure 5 FIG. 1 is a cross-sectional view of a semiconductor structure 10 according to another embodiment of the present invention. In one embodiment, the protrusion unit 120′ has a specific profile so that the energy distribution difference of the sub-beams L1 to L5 when irradiating the interface between the substrate 12 and the semiconductor stack 14 can be maintained within 20%. For example, the top 126d of the third protrusion unit 126 and the top 128d of the fourth protrusion unit 128 may include a flat surface parallel to the horizontal direction D1 ( Figure 4 ), or the third and fourth inclined surfaces of the third protruding unit 126 and the fourth protruding unit 128 may be continuous curved surfaces or curved surfaces with second-order or multi-order curve transitions ( Figure 5 ).

[0073] like Figure 5As shown, in one embodiment, the third protrusion unit 126 and the fourth protrusion unit 128 together form a continuous curved surface, and the curved surface of at least one protrusion unit, in a cross-sectional view, satisfies the relationship f = T / 2 ≤ R / (n-1), where f is the transmission focal length of the light beam LT through the second surface 12n into the substrate 12, T is the thickness between the recesses R1 and R2 of the substrate 12 measured along the second direction D2, R is the radius of curvature of the protrusion units 126 and 128, and n is the refractive index of the light beam LT in the substrate 12 (for example, the refractive index n of a sapphire substrate is between 1.762 and 1.778). In other words, as the thickness T of the substrate 12 increases, the radius of curvature of the protrusion units 126 and 128 increases. When the material of the substrate 12 is changed to increase the refractive index n, the required radius of curvature of the protrusion units 126 and 128 decreases.

[0074] Please refer to Figure 6 , Figure 6 This is a semiconductor structure processing system 200 according to an embodiment of the present invention. The processing system can Figures 1 to 5 The semiconductor structure 10 is shown processed to remove the semiconductor stack 14 from the first surface 12s of the substrate 12. Figure 6As shown, a semiconductor structure processing system 200 includes a laser source 210, a carrier 230, and an optical system 220. The laser source 210 is used to provide a light beam LT1, which can be an excimer laser or a diode-pumped solid-state laser (DPSS laser). The carrier 230 is used to support the semiconductor structure 10 and can move the semiconductor structure 10 to change the position at which the semiconductor structure 10 receives the light beam. In one embodiment, the semiconductor structure 10 is positioned on the carrier 230 with the substrate 12 facing the light beam LT3. The optical system 220 is used to modulate the light beam LT1 emitted by the laser source 210 and can include multiple mirrors (e.g., mirrors M1, M2, and M3), a beam expander 222, a lens array 224, a light shielding mask 226, and a reduction projection optical system 228. The mirrors M1, M2, and M3 are used to change the direction of the light beam LT1. The beam expander 222 may include a plurality of convex lenses and concave lenses for expanding the diameter of the light beam LT1. The lens array 224 includes a plurality of lens components and is arranged in an array perpendicular to the direction of travel of the light beam LT1. The lens array 224 is used to disperse the light beam LT1 passing through into multiple light beams LT2. The multiple light beams LT2 may have the same intensity and phase. In one embodiment, the arrangement of the multiple lens components of the lens array 224 is consistent with the arrangement of the protruding units 120 of the substrate 12 of the semiconductor structure 10. For example, the multiple lens components of the lens array 224 are arranged in a sphere packing manner, wherein the sphere packing manner means that each lens component is adjacent to the six lens components around it. The light shielding mask 226 includes a plurality of holes or slits for shielding the weaker energy portion of the outer side of the light beam LT2 to convert it into multiple light beams LT3 for emission. The reduction projection optical system 228 is used to reduce the size of the light beam LT3, or to focus the light beam LT3 on a processing surface of the semiconductor structure 10 (for example, the interface between the substrate 12 and the semiconductor stack 14 or the second surface 12n of the substrate 12). In one embodiment, the light shielding mask 226 and the reduction projection optical system 228 can be adjusted to fine-tune the angle and focus depth of the light beam LT3 toward the substrate 12, thereby adjusting the energy distribution of the light beam irradiated on the processing surface. The light beam LT3 may include the aforementioned Figure 1 and Figure 3 The beam LT in the Figure 1 and Figure 3 The sub-beams L1 to L5 are irradiated to the substrate 12 simultaneously or in different time periods.

[0075] In summary, the semiconductor structure, method and system for processing the semiconductor structure provided by the present invention can obtain uniform energy distribution on the concave and convex dissociation surface of the semiconductor structure, thereby improving the problems of incomplete peeling or damage to the component structure during the laser peeling of the patterned substrate in the prior art.

[0076] The above descriptions are merely preferred embodiments of the present invention. All equivalent changes and modifications made according to the claims of the present invention should fall within the scope of the present invention.

Claims

1. A semiconductor structure comprising: a substrate having a first surface and a second surface opposite to each other, the first surface having a first protrusion unit and a second protrusion unit arranged in a horizontal direction, the second surface having a third protrusion unit and a fourth protrusion unit arranged in the horizontal direction, wherein in a vertical direction, the first protrusion unit corresponds to the third protrusion unit, and the second protrusion unit corresponds to the fourth protrusion unit; and a semiconductor stack connected to the first surface; If the second surface is irradiated by a light beam parallel to the vertical direction, the light beam can form a substantially uniform energy distribution on the first surface.

2. The semiconductor structure according to claim 1, wherein The first protrusion unit and the second protrusion unit are spaced apart by a first distance in the horizontal direction, the third protrusion unit and the fourth protrusion unit are spaced apart by a second distance in the horizontal direction, and the first distance is substantially equal to the second distance.

3. The semiconductor structure according to claim 1, wherein In the vertical direction, a top of the first protrusion unit and a top of the third protrusion unit are opposite to each other.

4. The semiconductor structure according to claim 1, wherein The substrate includes a first recess and a second recess. The first recess is located between the first protrusion unit and the second protrusion unit, and the second recess is located between the third protrusion unit and the fourth protrusion unit. In the vertical direction, the first recess and the second recess are opposite to each other.

5. The semiconductor structure according to claim 1, wherein The first protrusion unit includes a first inclined surface and a second inclined surface, and the third protrusion unit includes a third inclined surface and a fourth inclined surface. In the vertical direction, the first inclined surface and the third inclined surface are opposite to each other, and the second inclined surface and the fourth inclined surface are opposite to each other. When the light beam irradiates the semiconductor structure along the vertical direction, the first sub-beam of the light beam that enters the substrate from the fourth inclined surface is refracted to the first inclined surface, and the second sub-beam of the light beam that enters the substrate from the third inclined surface is refracted to the second inclined surface. The semiconductor structure according to claim 5 , wherein: The first sub-beam irradiates the fourth inclined surface at a fourth incident angle and then irradiates the first inclined surface at a first incident angle. The second sub-beam irradiates the third inclined surface at a third incident angle and then irradiates the second inclined surface at a second incident angle. The first incident angle is smaller than the fourth incident angle, and the second incident angle is smaller than the third incident angle.

7. The semiconductor structure according to claim 6, wherein: The first incident angle and the second incident angle are both smaller than 10 degrees.

8. The semiconductor structure according to claim 5, wherein The first sub-beam and the second sub-beam intersect in the substrate.

9. The semiconductor structure according to claim 1, wherein In the cross-sectional view, the first protrusion unit and the third protrusion unit have different profiles.

10. The semiconductor structure according to claim 1, wherein The top of the third protrusion unit has a flat surface parallel to the horizontal direction.

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