Multi-mode artificial synapse for improving linearity and preparation method of multi-mode artificial synapse
By using the multi-field coordinated regulation of MoS2 and VO2 film layers and PVA-H3PO4 gel in synaptic transistors, the problem of insufficient weight linearity is solved, and high linearity and flexible weight regulation is achieved, which is suitable for neuromorphic calculations and brain-like calculations.
Patent Information
- Application Number
- CN202510572513.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-06
- Publication Date
- 2025-08-08
AI Technical Summary
The insufficient linearity of the weight of existing synaptic transistors makes it difficult to accurately simulate biological synaptic behavior, and the lack of flexibility in a single regulatory method.
The stacked MoS2 and VO2 film layers are used as the channel layers, and combined with PVA-H3PO4 gel as the ion conductive layer, the coordinated regulation of electricity, light and thermal fields is achieved, and the synaptic weight is adjusted through ion migration, photogenerating carriers and thermal field phase change.
The linearity and flexibility of synaptic weight regulation are improved, the response sensitivity in low electric field regions is enhanced, and a high linear weight regulation curve is achieved, close to the behavior of the real nervous system.
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Figure CN120456810A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of neuromorphic devices, and in particular to a multimodal artificial synapse for improving linearity and a preparation method thereof. Background Art
[0002] In the field of artificial synaptic transistors, insufficient weight linearity is a key issue in practical applications. When subjected to external stimuli (such as electric fields), the weight changes of synaptic transistors are often not linear and smooth, but instead exhibit step-like, sudden, or uneven changes. This phenomenon limits the accuracy of their simulation of biological synaptic behavior, making it difficult to meet the requirements of brain-inspired computing for continuous regulation of synaptic behavior.
[0003] One of the reasons for the lack of weight linearity is the nonlinear response of traditional brain-like devices. Most existing synaptic transistors use a single functional material (such as a two-dimensional material or an oxide semiconductor) as the channel layer. These materials usually have significant nonlinear characteristics in response to external electric fields. For example, the conductivity of two-dimensional materials (such as MoS2) changes too quickly or too slowly under low or high electric fields, resulting in uneven weight changes. In addition, oxide materials (such as IGZO) can also cause jump-like changes in conductivity due to the presence of interface defects or trap states, making it difficult to achieve fine adjustment.
[0004] Another reason is the limitations of a single control method. Currently, most synaptic transistors rely primarily on electric fields to control weight updates. This single electric field control mechanism lacks flexibility and has limited ability to simulate the complex dynamic behavior of biological synapses. When a wider range of weight changes is required, relying solely on electric field control can lead to inaccurate control and even increase power consumption and heat accumulation. Summary of the Invention
[0005] In order to solve the technical problem of insufficient linearity of existing artificial synaptic transistor weights, the present application provides a multimodal artificial synapse and a preparation method for improving linearity.
[0006] To achieve the above objectives, this application is implemented through the following technical solutions:
[0007] The present application provides a multimodal artificial synapse for improving linearity, comprising a transparent substrate, a source electrode, a drain electrode, and a channel layer located between the source electrode and the drain electrode, an ion conductive layer covering the source electrode, the drain electrode, and the channel layer, and a transparent gate electrode provided on the ion conductive layer, wherein the channel layer is prepared by stacking a MoS2 thin film layer and a VO2 thin film layer, and the ion conductive layer is composed of a PVA-H3PO4 gel.
[0008] As a further improvement of the present application, the thickness of the source and drain are both 100-200 nm, the thickness of the MoS2 thin film layer is 50-100 nm, the thickness of the VO2 thin film layer is 50-100 nm, the thickness of the ion conductive layer is 15-20 nm, and the thickness of the gate is 50-200 nm.
[0009] To achieve the above objectives, the present application further provides a method for preparing the multimodal artificial synapse for improving linearity, comprising the following steps:
[0010] S1. preparing a source electrode and a drain electrode on a transparent glass substrate to obtain a first sample;
[0011] S2. Preparing a MoS2 thin film layer on the transparent glass substrate of the first sample, wherein the MoS2 thin film layer is located between the source electrode and the drain electrode and is electrically connected to the source electrode and the drain electrode, to obtain a second sample;
[0012] S3, preparing a VO2 thin film layer on the MoS2 thin film layer, wherein the VO2 thin film layer is also located between the source electrode and the drain electrode and is electrically connected to the source electrode and the drain electrode, to obtain a third sample;
[0013] S4, preparing a PVA-H3PO4 ion conductive layer on the VO2 thin film layer, the source electrode and the drain electrode to obtain a fourth sample;
[0014] S5. Prepare a gate on the PVA-H3PO4 ion conductive layer to obtain a multimodal artificial synapse.
[0015] As a further improvement of the present application, in step S2, the specific steps of preparing the MoS2 thin film layer on the transparent glass substrate of the first sample are as follows:
[0016] A1. Placing a Si or SiO2 substrate, a molybdenum source, and a sulfur source in a first reaction chamber of a chemical vapor deposition apparatus in sequence, setting the temperature to 650-750°C, introducing argon and hydrogen into the first reaction chamber, and depositing for a first preset time to prepare a MoS2 thin film layer on the Si or SiO2 substrate;
[0017] A2, preparing a PMMA support layer on the MoS2 thin film layer;
[0018] A3, etching the Si or SiO2 substrate to transfer the floating PMMA support layer and MoS2 thin film layer to a transparent glass substrate;
[0019] A4. After rinsing the PMMA support layer and the MoS2 thin film layer with deionized water, the PMMA support layer was dissolved with an acetone solution and washed, so that the MoS2 thin film layer was prepared on the transparent glass substrate to obtain a first sample.
[0020] As a further improvement of the present application, in step A1, the flow rates of argon and hydrogen introduced into the first reaction chamber are 10 sccm and 5 sccm, respectively.
[0021] As a further improvement of the present application, in step A2, a PMMA support layer is coated on the MoS2 thin film layer by spin coating.
[0022] As a further improvement of the present application, in step A3, the sample after step A2 is placed in hydrofluoric acid to etch the Si or SiO2 substrate.
[0023] As a further improvement of the present application, in step S3, the specific steps of preparing the VO2 thin film layer on the MoS2 thin film layer are as follows: first, the vanadium source and the second sample are placed in the second reaction chamber of the pulsed laser device, the temperature of the substrate on which the second sample is placed is set to 450°C, 15mTorr of oxygen is filled into the second reaction chamber, and the laser energy is set to 2J / cm 2 , the deposition time is 30 min; secondly, the deposited second sample is annealed in an oxygen environment at 450° C. for 1 hour to obtain a third sample.
[0024] As a further improvement of the present application, in step S4, the specific steps of preparing the PVA-H3PO4 ion conductive layer on the VO2 thin film layer, the source electrode and the drain electrode are as follows: first, deionized water is placed in a reaction container and heated to 90°C. Under continuous stirring, PVA powder is added to the deionized water, and then H3PO4 is slowly added, and continuous stirring is continued until completely mixed to obtain a mixed solution; secondly, the mixed solution is evenly coated on the source electrode, drain electrode and VO2 thin film layer of the third sample by a drop coating method, and dried at 55°C to 65°C to form a PVA-H3PO4 ion conductive layer, wherein: in terms of mass percentage, the mass percentage of the PVA in the mixed solution is 10%; the mass ratio of the PVA to the H3PO4 is 1:0.5.
[0025] As a further improvement of the present application, in step S1, an electron beam evaporation coating device is used to prepare a source electrode and a drain electrode on a transparent glass substrate; in step S4, a magnetron sputtering device is used to prepare a gate electrode on the PVA-H3PO4 ion conductive layer.
[0026] The beneficial effect of the present application is that the present application designs a multimodal artificial synapse, comprising a transparent substrate, a source electrode and a drain electrode provided on the transparent substrate, and a channel layer located between the source electrode and the drain electrode, an ion conductive layer covering the source electrode, the drain electrode, and the channel layer, and a transparent gate provided on the ion conductive layer, wherein the channel layer is prepared by stacking a MoS2 thin film layer and a VO2 thin film layer, and the ion conductive layer is composed of a PVA-H3PO4 gel. This multimodal artificial synapse can realize a multi-field coordinated control mechanism of electricity, light, and heat, solving the limitations of a single control mode, and improving the linearity of the synaptic transistor weight adjustment through the multi-field coordinated control mechanism of electricity, light, and heat. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 Schematic diagram of the structure of the multimodal artificial synapse for improving linearity of the present application;
[0028] Figure 2 is the conductivity response curve of the multimodal artificial synaptic device prepared in Example 1 under the coordinated control of the electro-optical and thermal fields;
[0029] Figure 3 This is the conductivity response curve of the multimodal artificial synaptic device prepared in Example 1 under electric field regulation.
[0030] In the figure: 1. Transparent substrate; 2. Source; 3. Drain; 4. MoS2 thin film layer; 5. VO2 thin film layer; 6. Ion conductive layer; 7. Gate. DETAILED DESCRIPTION
[0031] The following will be combined with the embodiments of the present application to clearly and completely describe the technical solutions of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.
[0032] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with specific implementation methods.
[0033] Artificial synaptic transistors are a new type of electronic device developed in recent years to simulate the behavior of biological synapses. They have broad application prospects in neuromorphic computing, brain-inspired computing, and intelligent sensing. Their core function is to achieve biological synaptic weight regulation (such as long-term potentiation (LTP) and long-term depression (LTD)) through external stimuli such as electric fields. However, current technologies still suffer from insufficient linearity in the process of realizing artificial synapses: the adjustment process of synaptic weights often exhibits nonlinear or discontinuous characteristics, making it difficult to accurately simulate the step-by-step synaptic responses in biological neurons.
[0034] To solve the above problems, the present application provides a multimodal artificial synapse for improving linearity, such as Figure 1 As shown, it includes a transparent substrate 1, a source electrode 2, a drain electrode 3 and a channel layer between the source electrode 2 and the drain electrode 3, an ion conductive layer 6 covering the source electrode 2, the drain electrode 3 and the channel layer, and a transparent gate 7 provided on the ion conductive layer 6, wherein the channel layer is formed by stacking M O The S2 thin film layer 4 and the VO2 thin film layer 5 are prepared, and the ion conductive layer 6 is composed of PVA-H3PO4 gel.
[0035] Based on the above technical solution, the working principle of placing the multimodal artificial synapse only under an electric field is as follows: when a voltage is applied between the transparent gate 7 and the source 2 and drain 3, the device is under the action of the electric field. The gate 7 voltage first acts on the ion conductive layer 6 (PVA-H3PO4 gel). Due to the good ion conductivity of the gel, under the action of the electric field, H + and PO4 3- Plasma will migrate. These ions are driven by the electric field to the channel layer (M O The S2 thin film layer 4 and the VO2 thin film layer 5) migrate to change the conductivity of the channel layer. Specifically, cations such as H+ will be inserted into the interlayer structure of VO5, changing its band structure and carrier concentration, thereby adjusting the conductivity of the channel. At the same time, the migration of ions will also form charge accumulation on the surface of the channel layer, further affecting the potential distribution of the channel layer and achieving preliminary adjustment of the synaptic weight. This electric field regulation mechanism based on ion migration enables the device to simulate the short-term plasticity of biological synapses.
[0036] The working principle of placing the multimodal artificial synapse under electric field and light field is: on the basis of the initial regulation of the electric field, the introduction of the light field can further enhance the response sensitivity of the low electric field area. O The S2 thin film layer 4) absorbs photon energy and generates additional carriers. These photogenerated carriers separate and migrate under the combined action of the built-in electric field and the light field, further changing the conductivity of the channel layer. Specifically, photogenerated electrons increase the carrier concentration in the channel and improve conductivity; while photogenerated holes accumulate in the functional layer, forming an additional electric field, enhancing the regulation of the channel layer. This light field enhancement mechanism can effectively improve the response sensitivity of the device in the low electric field region, making the adjustment of synaptic weights more precise and accurate, and further optimizing the plasticity of the synapse.
[0037] The working principle of placing the multimodal artificial synapse under electric field, light field and thermal field is as follows: the nonlinear behavior of the synapse can be further corrected by the action of the thermal field, and a highly linear weight adjustment curve can be achieved. When the device is working, Joule heat is generated due to the current passing through the channel layer, and the thermal effect of the external environment will also affect the device. The heat will cause the VO2 thin film layer 5 to undergo a phase change, for example, from an insulating state to a metallic state, and its conductivity will change significantly. This phase change will further change the potential distribution and carrier transport characteristics of the channel layer, thereby fine-tuning the synaptic weight. In addition, the thermal field can also affect the migration rate and direction of ions in the ion conductive layer 6, making the distribution of ions in the channel layer more uniform and stable. This thermal field correction mechanism can effectively suppress the nonlinear behavior of the synapse, improve the linearity of the weight adjustment, and ultimately achieve a highly linear weight adjustment curve, making the device closer to the behavior of the real nervous system in simulating the function of biological synapses.
[0038] In an optional embodiment, the thickness of the source electrode 2 and the drain electrode 3 are both 100-200 nm, and the M O The thickness of the S2 thin film layer 4 is 50-100 nm, the thickness of the VO2 thin film layer 5 is 50-100 nm, the thickness of the ion conductive layer 6 is 15-20 nm, and the thickness of the gate 7 is 50-200 nm.
[0039] To achieve the above objectives, the present application also provides a method for preparing a multimodal artificial synapse for improving linearity, comprising the following steps:
[0040] S1. preparing a source electrode 2 and a drain electrode 3 on a transparent glass substrate to obtain a first sample;
[0041] S2, prepare M on the transparent glass substrate of the first sample O S2 thin film layer 4, the M O The S2 thin film layer 4 is located between the source electrode 2 and the drain electrode 3 and is electrically connected to the source electrode 2 and the drain electrode 3, thereby obtaining a second sample;
[0042] S3, in the M O A VO2 thin film layer 5 is formed on the S2 thin film layer 4. The VO2 thin film layer 5 is also located between the source electrode 2 and the drain electrode 3 and is electrically connected to the source electrode 2 and the drain electrode 3 to obtain a third sample.
[0043] S4, preparing a PVA-H3PO4 ion conductive layer 6 on the VO2 thin film layer 5, the source electrode 2 and the drain electrode 3 to obtain a fourth sample;
[0044] S5. Prepare a gate 7 on the PVA-H3PO4 ion conductive layer 6 to obtain a multimodal artificial synapse.
[0045] In an optional embodiment, in step S2, the M is prepared on the transparent glass substrate of the first sample. O The specific steps of S2 thin film layer 4 are as follows:
[0046] A1. Place the Si or SiO2 substrate, the molybdenum source, and the sulfur source in the first reaction chamber of the chemical vapor deposition equipment in sequence, set the temperature to 650-750°C, introduce argon and hydrogen into the first reaction chamber, and deposit for a first preset time to prepare Mo on the Si or SiO2 substrate. O S2 film layer 4;
[0047] A2. In the M O A PMMA support layer is prepared on the S2 film layer 4;
[0048] A3, etch the Si or SiO2 substrate, and separate the floating PMMA support layer and the PMMA substrate. O S2 thin film layer 4 is transferred to the transparent glass substrate;
[0049] A4. Rinse the PMMA support layer and M with deionized water. O After S2 film layer 4, use acetone solution to dissolve PMMA support layer, clean it, and make M O The S2 thin film layer 4 is prepared on the transparent glass substrate to obtain a first sample.
[0050] In an optional embodiment, in step A1, the flow rates of argon and hydrogen introduced into the first reaction chamber are 10 sccm and 5 sccm, respectively.
[0051] In an optional embodiment, in step A2, a spin coating method is used to coat the M O A PMMA support layer is coated on the S2 film layer 4. During the spin coating process, the PMMA O The rotation speed of the substrate of the S2 thin film layer 4 is 3500 rpm to 4500 rpm.
[0052] In an optional embodiment, in step A3, the sample after step A2 is placed in hydrofluoric acid to etch the Si or SiO2 substrate.
[0053] In an optional embodiment, in step S3, the O The specific steps of preparing the VO2 thin film layer 5 on the S2 thin film layer 4 are as follows: first, place the vanadium source and the second sample in the second reaction chamber of the pulsed laser device, set the temperature of the substrate on which the second sample is placed to 450°C, fill the second reaction chamber with 15mTorr of oxygen, and set the laser energy to 2J / cm 2 , the deposition time is 30 min; secondly, the deposited second sample is annealed in an oxygen environment at 450° C. for 1 hour to obtain a third sample.
[0054] In an optional embodiment, in step S4, the specific steps of preparing the PVA-H3PO4 ion conductive layer 6 on the VO2 thin film layer 5, the source 2 and the drain 3 are as follows: first, deionized water is placed in a reaction container and heated to 90°C. Under continuous stirring, PVA powder is added to the deionized water, and then H3PO4 is slowly added, and continuous stirring is continued until completely mixed to obtain a mixed solution; secondly, the mixed solution is evenly coated on the source 2, drain 3 and VO2 thin film layer 5 of the third sample by a drop coating method, and dried at 55°C to 65°C to form a PVA-H3PO4 ion conductive layer 6, thereby obtaining a fourth sample, wherein: in terms of mass percentage, the mass percentage of the PVA in the mixed solution is 10%; the mass ratio of the PVA to the H3PO4 is 1:0.5.
[0055] In an optional embodiment, in step S1, the source electrode 2 and the drain electrode 3 are prepared on the transparent glass substrate using electron beam evaporation coating equipment; in step S4, the gate electrode 7 is prepared on the PVA-H3PO4 ion conductive layer 6 using magnetron sputtering equipment.
[0056] In order to verify that the technical solution of this application has excellent effects, this application also provides the following examples.
[0057] Example 1
[0058] This embodiment provides a multimodal artificial synapse for improving linearity, which is prepared by the following steps:
[0059] S1. Prepare a source electrode and a drain electrode on a transparent glass substrate using an electron beam evaporation coating device. The source electrode and the drain electrode are made of Au, and the thickness of the source electrode is 50 nm, and the thickness of the drain electrode is 50 nm, to obtain a first sample.
[0060] S2. Preparing a MoS2 thin film layer on the transparent glass substrate of the first sample: First, the SiO2 substrate, the molybdenum source and the sulfur source are placed in the first reaction chamber of the chemical vapor deposition equipment in sequence, the temperature is set to 650-750°C, 10 sccm of argon and 5 sccm of hydrogen are introduced into the first reaction chamber, and the deposition is carried out for 30 minutes to form a single layer or a multilayer MoS2 thin film layer on the SiO2 substrate; secondly, a polymethyl methacrylate (PMMA) support layer is prepared on the MoS2 thin film layer by spin coating at a rotation speed of 4000 rpm for 1 min; again, the above sample was placed in a hydrofluoric acid solution, the SiO2 substrate was etched away, the MoS2 thin film layer was released, and the floating PMMA support layer and the MoS2 thin film layer were transferred to the transparent glass substrate of the first sample; finally, the PMMA support layer and the MoS2 thin film layer were rinsed with deionized water to remove the acidic residue, and then the PMMA support layer was dissolved with an acetone solution and washed to prepare the MoS2 thin film layer on the transparent glass substrate. The thickness of the MoS2 thin film layer was 100 nm, and a second sample was obtained.
[0061] S3. Prepare a VO2 thin film layer on the MoS2 thin film layer: First, place the vanadium source and the second sample in the second reaction chamber of the pulsed laser device, set the temperature of the substrate on which the second sample is placed to 450°C, fill the second reaction chamber with 15mTorr of oxygen, and set the laser energy to 2J / cm 2 , the deposition time is 30 minutes; secondly, the deposited second sample is placed in an oxygen environment for annealing for 1 hour at 450°C to form a VO2 thin film layer with a thickness of 100 nm, thereby obtaining a third sample;
[0062] S4. Preparing a PVA-H3PO4 ion conductive layer on the VO2 thin film layer, the source electrode and the drain electrode: first, placing deionized water in a reaction container and heating it to 90°C, adding PVA powder to the deionized water under continuous stirring, wherein the mass percentage of the PVA is 10%, and then slowly adding H3PO4, wherein the mass ratio of the PVA to the H3PO4 is 1:0.5, and continuously stirring until completely mixed to obtain a mixed solution; secondly, uniformly coating the mixed solution on the source electrode, the drain electrode and the VO2 thin film layer of the third sample by a drop coating method, and drying at 55°C to 65°C to form a PVA-H3PO4 ion conductive layer, wherein the thickness of the PVA-H3PO4 ion conductive layer is 20 nm, to obtain a fourth sample;
[0063] S5. An ITO gate is prepared on the PVA-H3PO4 ion conductive layer by magnetron sputtering. The thickness of the ITO gate is 100 nm, and a multimodal artificial synapse is obtained.
[0064] The multimodal artificial synapse prepared in Example 1 was tested for electric field and electro-optical-thermal field coordinated control. The specific experimental steps are as follows: continuous external pulses were applied to the multimodal artificial synapse device, and the change in device conductance after each pulse stimulation was measured. The response curves of the two schemes were recorded respectively, and their linearity and smoothness were compared. The results are shown in Figure 2. Figure 2 and Figure 3 shown.
[0065] Figure 2 This figure shows the conductivity response curve of the multimodal artificial synaptic device prepared in Example 1 under the coordinated control of the electro-optical-thermal field. The vertical axis represents the conductivity change (weight) of the multimodal artificial synaptic device, and the horizontal axis represents the gradually increasing number of applied pulses.
[0066] Figure 3 The conductivity response curve of the multimodal artificial synaptic device prepared in Example 1 under single electric field control is shown. The vertical axis represents the conductance change (weight) of the multimodal artificial synaptic device, and the horizontal axis represents the gradually increasing number of applied pulses.
[0067] In the coordinated control of electro-optical and thermal fields: the weight is basically adjusted by the electric field, and the light field is used to enhance the low electric field sensitivity. The thermal field further optimizes the response curve, so that the conductivity of the multimodal artificial synaptic device shows a highly linear change with the increase in the number of pulses, and the weight changes smoothly and step by step.
[0068] In electric field regulation: The response performance of the multimodal artificial synaptic transistor under single electric field regulation clearly shows that the weight change has large nonlinearity and step-like changes, and the conductivity regulation is not precise enough.
[0069] In addition, the dynamic range refers to the adjustable range of conductance change, from the minimum to the maximum conductance range, which is determined by Figure 2 The dynamic range is significantly greater than Figure 3 The dynamic range in the figure shows that the electro-optical-thermal field coordinated control scheme has a large dynamic range while ensuring high linearity.
[0070] In summary, this application designs a multimodal artificial synapse, which can realize the coordinated control mechanism of multiple fields including electricity, light and heat, solves the limitations of a single control mode, and improves the linearity of synaptic transistor weight adjustment through the coordinated control mechanism of multiple fields including electricity, light and heat, further broadening its application in brain-like computing devices.
[0071] Although this specification is described according to implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each implementation method can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.
[0072] The series of detailed descriptions listed above are only specific descriptions of the feasible implementation methods of this application. They are not intended to limit the scope of protection of this application. Any equivalent implementation methods or changes that do not deviate from the technical spirit of this application should be included in the scope of protection of this application.
Claims
1. A multimodal artificial synapse for improving linearity, characterized in that: It includes a transparent substrate, a source electrode, a drain electrode and a channel layer located between the source electrode and the drain electrode, an ion conductive layer covering the source electrode, the drain electrode and the channel layer, and a transparent gate electrode provided on the ion conductive layer. The channel layer is prepared by stacking a MoS2 thin film layer and a VO2 thin film layer, and the ion conductive layer is composed of PVA-H3PO4 gel.
2. The multimodal artificial synapse for improving linearity according to claim 1, wherein: The thickness of the source and drain electrodes are both 100-200 nm, the thickness of the MoS2 thin film layer is 50-100 nm, the thickness of the VO2 thin film layer is 50-100 nm, the thickness of the ion conductive layer is 15-20 nm, and the thickness of the gate electrode is 50-200 nm.
3. A method for preparing a multimodal artificial synapse for improving linearity according to any one of claims 1 to 2, characterized in that: The steps include: S1. preparing a source electrode and a drain electrode on a transparent glass substrate to obtain a first sample; S2. Preparing a MoS2 thin film layer on the transparent glass substrate of the first sample, wherein the MoS2 thin film layer is located between the source electrode and the drain electrode and is electrically connected to the source electrode and the drain electrode, to obtain a second sample; S3, preparing a VO2 thin film layer on the MoS2 thin film layer, wherein the VO2 thin film layer is also located between the source electrode and the drain electrode and is electrically connected to the source electrode and the drain electrode, to obtain a third sample; S4, preparing a PVA-H3PO4 ion conductive layer on the VO2 thin film layer, the source electrode and the drain electrode to obtain a fourth sample; S5. Prepare a gate on the PVA-H3PO4 ion conductive layer to obtain a multimodal artificial synapse.
4. The method for preparing a multimodal artificial synapse for improving linearity according to claim 3, wherein: In step S2, the specific steps of preparing the MoS2 thin film layer on the transparent glass substrate of the first sample are as follows: A1. Placing a Si or SiO2 substrate, a molybdenum source, and a sulfur source in a first reaction chamber of a chemical vapor deposition apparatus in sequence, setting the temperature to 650-750°C, introducing argon and hydrogen into the first reaction chamber, and depositing for a first preset time to prepare a MoS2 thin film layer on the Si or SiO2 substrate; A2, preparing a PMMA support layer on the MoS2 thin film layer; A3, etching the Si or SiO2 substrate to transfer the floating PMMA support layer and MoS2 thin film layer to a transparent glass substrate; A4. After rinsing the PMMA support layer and the MoS2 thin film layer with deionized water, the PMMA support layer is dissolved with an acetone solution and washed, so that the MoS2 thin film layer is prepared on the transparent glass substrate to obtain a first sample.
5. The method for preparing a multimodal artificial synapse for improving linearity according to claim 4, wherein: In step A1, the flow rates of argon and hydrogen introduced into the first reaction chamber are 10 sccm and 5 sccm, respectively.
6. The method for preparing a multimodal artificial synapse for improving linearity according to claim 4, wherein: In step A2, a PMMA support layer is coated on the MoS2 thin film layer by spin coating.
7. The method for preparing a multimodal artificial synapse for improving linearity according to claim 4, wherein: In step A3, the sample after step A2 is placed in hydrofluoric acid to etch the Si or SiO2 substrate.
8. The method for preparing a multimodal artificial synapse for improving linearity according to claim 3, wherein: In step S3, the specific steps of preparing the VO2 thin film layer on the MoS2 thin film layer are as follows: first, the vanadium source and the second sample are placed in the second reaction chamber of the pulsed laser device, the temperature of the substrate on which the second sample is placed is set to 450°C, 15mTorr of oxygen is filled into the second reaction chamber, and the laser energy is set to 2J / cm 2 , the deposition time is 30 minutes; secondly, the deposited second sample is annealed in an oxygen environment at 450°C for 1 hour to obtain a third sample.
9. The method for preparing a multimodal artificial synapse for improving linearity according to claim 3, wherein: In step S4, the specific steps of preparing the PVA-H3PO4 ion conductive layer on the VO2 thin film layer, the source electrode and the drain electrode are as follows: first, deionized water is placed in a reaction container and heated to 90°C. Under continuous stirring, PVA powder is added to the deionized water, and then H3PO4 is slowly added, and continuous stirring is continued until completely mixed to obtain a mixed solution; secondly, the mixed solution is evenly coated on the source electrode, drain electrode and VO2 thin film layer of the third sample by a drop coating method, and dried at 55°C to 65°C to form a PVA-H3PO4 ion conductive layer, wherein: in terms of mass percentage, the mass percentage of the PVA in the mixed solution is 10%; the mass ratio of the PVA to the H3PO4 is 1:0.
5.
10. The method for preparing a multimodal artificial synapse for improving linearity according to claim 3, wherein: In step S1, a source electrode and a drain electrode are prepared on a transparent glass substrate using an electron beam evaporation coating device; in step S4, a gate electrode is prepared on the PVA-H3PO4 ion conductive layer using a magnetron sputtering device.