Imaging system for x-ray microscope and corresponding operating method
By using a combined structure of the target layer and the support layer in an X-ray microscope, the target layer is excited by using electron beam to generate X-rays and dissipate heat through the support layer, the problems of heat loss and low X-ray utilization efficiency in the prior art are solved, and efficient sample imaging and three-dimensional image reconstruction are achieved.
Patent Information
- Application Number
- CN202380090345.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-07
- Publication Date
- 2025-08-08
Smart Images
Figure CN120457501A_ABST
Abstract
Description
Background Art
[0001] An X-ray microscope may include an X-ray source and an X-ray detector. A sample to be imaged by the X-ray microscope may be located between the X-ray source and the X-ray detector. The X-ray source may transmit an X-ray beam toward the sample; the X-ray detector may capture a magnified image of the sample based on the interaction between the X-ray beam and the sample. Summary of the Invention
[0002] Disclosed herein is a system comprising: a target layer, a support layer, and a radiation detector. The system is configured to generate an electron beam directed toward the target layer. The target layer is configured to generate X-rays in response to the electron beam striking the target layer. The support layer is configured to dissipate heat from the target layer. The support layer is not opaque to X-rays. The support layer and the target layer have different chemical compositions. The support layer is positioned between the target layer and the radiation detector. The support layer is positioned between the target layer and a sample. The radiation detector is configured to capture an image of the sample based on the interaction between the sample and the X-rays.
[0003] In one aspect, the electron beam is in a high vacuum.
[0004] In one aspect, the electron beam comes from an electron beam source, and the target layer is located between the electron beam source and the support layer.
[0005] In one aspect, the sample is under vacuum.
[0006] In one aspect, the system further comprises a first vacuum chamber and a second vacuum chamber. The electron beam is in the first vacuum chamber. The sample is in the second vacuum chamber. The combination of the target layer and the support layer serves as a wall of the first vacuum chamber and the second vacuum chamber.
[0007] In one aspect, the target layer comprises platinum, a lanthanide, copper, iron, chromium, tungsten, or a combination thereof.
[0008] In one aspect, the target layer has a shape of a portion of a sphere, and the sample is located at the center of the sphere.
[0009] In one aspect, the support layer is in direct physical contact with the target layer.
[0010] In one aspect, one or more portions of the target layer configured to receive the electron beam are in direct physical contact with the support layer.
[0011] In one aspect, the support layer comprises beryllium or diamond.
[0012] In one aspect, the sample is in direct physical contact with the support layer.
[0013] In one aspect, the radiation detector is a photon counting detector.
[0014] In one aspect, the one or more discrete portions of the target layer are respectively located in one or more recesses in the support layer.
[0015] The present invention also discloses a method for using the system, comprising: directing the electron beam to a first incident point on the target layer, thereby generating a first X-ray from the first incident point toward the sample, and capturing a first image of the sample using the radiation detector based on an interaction between the sample and the first X-ray.
[0016] In one aspect, the method further includes: after taking the first image, guiding the electron beam to a second incident point on the target layer, thereby generating a second X-ray from the second incident point toward the sample, and using the radiation detector to take a second image of the sample based on the interaction between the sample and the second X-ray.
[0017] In one aspect, the method further comprises reconstructing a three-dimensional image of the sample based at least on the first image and the second image.
[0018] In one aspect, a maximum dimension of the first incident point measured at the first incident point along a direction parallel to the surface of the target layer is different from a maximum dimension of the second incident point measured at the second incident point along a direction parallel to the surface of the target layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 An imaging system according to an embodiment is schematically illustrated.
[0020] Figure 2 A flow chart outlining the operation of an imaging system according to an embodiment is shown.
[0021] Figure 3 An imaging system with a vacuum chamber according to an embodiment is shown.
[0022] Figure 4 A target layer of an imaging system according to an embodiment is shown.
[0023] Figure 5 A target layer of an imaging system according to an alternative embodiment is shown.
[0024] Figure 6 An electron beam of an imaging system according to an embodiment is shown. DETAILED DESCRIPTION
[0025] Imaging system (X-ray microscope)
[0026] Figure 1 The imaging system 100 according to an embodiment is schematically shown. The imaging system 100 may include an electron beam source 150, a target layer 112, a support layer 114, and a radiation detector 120.
[0027] electron beam source
[0028] In one embodiment, the electron beam source 150 may generate an electron beam 152 toward the target layer 112. Examples of the electron beam source 150 may include at least a thermionic source and a field emission source.
[0029] target layer
[0030] In one embodiment, in response to the target layer 112 being struck by the electron beam 152 at the incident point, the target layer 112 may generate X-rays from the incident point on the target layer 112 toward the sample 190 (located between the target layer 112 and the radiation detector 120). In one embodiment, the target layer 112 may include platinum, a lanthanide element, copper, iron, chromium, tungsten, or any combination thereof.
[0031] In one embodiment, the target layer 112 may be located between the electron beam source 150 and the support layer 114 (as shown).
[0032] Support layer
[0033] In one embodiment, the support layer 114 can dissipate heat from the target layer 112. In one embodiment, the support layer 114 can include a thermally conductive material.
[0034] In one embodiment, the support layer 114 may be located between the target layer 112 and the radiation detector 120 . That is, the target layer 112 shields the support layer 114 from the electron beam 152 .
[0035] In one embodiment, the support layer 114 can be in direct physical contact with the target layer 112. In one embodiment, the portion of the target layer 112 that is to receive the electron beam 152 can be in direct physical contact with the support layer 114. In other words, the portion of the target layer 112 that is to receive the electron beam 152 is directly supported by the support layer 114.
[0036] In an embodiment, support layer 114 may not be non-transparent to X-rays generated by target layer 112 in response to target layer 112 being struck by electron beam 152. Therefore, X-rays generated as described above may pass through support layer 114 and reach sample 190 and radiation detector 120.
[0037] In one embodiment, the support layer 114 may include beryllium or diamond. Thus, the support layer 114 is both (A) thermally conductive to dissipate heat (if any) from the target layer 112 and (B) not non-transparent to X-rays generated by the target layer 112 in response to the target layer 112 being struck by the electron beam 152.
[0038] In one embodiment, the chemical composition of the target layer 112 may be different from the chemical composition of the support layer 114. In other words, the target layer 112 and the support layer 114 have different chemical compositions.
[0039] Radiation detectors
[0040] In one embodiment, the radiation detector 120 may capture an image of the sample 190 based on the interaction between the sample 190 and the X-rays generated by the target layer 112 .
[0041] The interaction between the X-rays and the sample 190 may include situations such as: (A) some radiation particles of the X-rays incident on the sample 190 are blocked by the sample 190, and (B) some radiation particles of the X-rays incident on the sample 190 pass through the sample 190 without changing their direction.
[0042] In one embodiment, the radiation detector 120 may be a photon counting detector. Specifically, in one embodiment, each sensing element of the radiation detector 120 may include a photon counter, and each time the voltage of the electrode of each sensing element (indicating the number of carriers accumulated in each sensing element) exceeds a predetermined threshold, the photon counter count is incremented by one.
[0043] In one embodiment, the support layer 114 may be located between the target layer 112 and the sample 190 . That is, the X-rays generated by the target layer 112 pass through the support layer 114 before reaching the sample 190 .
[0044] In one embodiment, the sample 190 may be in direct physical contact with the support layer 114 .
[0045] Operation of the imaging system
[0046] In one embodiment, the imaging system 100 may operate as follows.
[0047] In one embodiment, the electron beam 152 may be directed to the first incident point 112 s 1 , causing the target layer 112 to generate a first X-ray (eg, X-ray 112 x 1 ) directed from the first incident point 112 s 1 toward the sample 190 .
[0048] Then, in one embodiment, the radiation detector 120 may capture a first image of the sample 190 based on the interaction between the sample 190 and the first X-ray.
[0049] Flowchart outlining the operation of the imaging system
[0050] Figure 2 shows an overview according to an embodiment Figure 1 Flowchart 200 of the operation of the imaging system 100.
[0051] In step 210, the operation may include directing the electron beam to a first incident point on the target layer, thereby generating a first X-ray from the first incident point toward the sample. Figure 1 The electron beam 152 is guided to the first incident point 112 s 1 , thereby generating a first X-ray (eg, X-ray 112 x 1 ) directed from the first incident point 112 s 1 toward the sample 190 .
[0052] In step 220, the operation may include taking a first image of the sample based on the interaction between the sample and the first X-ray using a radiation detector. Figure 1 , the radiation detector 120 captures a first image of the sample 190 based on the interaction between the sample 190 and the first X-ray.
[0053] Other embodiments
[0054] Multiple images at different angles for 3D reconstruction
[0055] In one embodiment, referring to Figure 1 After the radiation detector 120 captures the first image of the sample 190 , the electron beam 152 may be directed to the second incident point 112 s 2 , causing the target layer 112 to generate a second X-ray (eg, X-ray 112 x 2 ) from the second incident point 112 s 2 toward the sample 190 .
[0056] Then, in one embodiment, the radiation detector 120 may capture a second image of the sample 190 based on the interaction between the sample 190 and the second X-ray.
[0057] In one embodiment, a three-dimensional image of the sample 190 may be reconstructed based on at least the first image and the second image of the sample 190 .
[0058] vacuum chamber
[0059] In one embodiment, referring to Figure 3 , the imaging system 100 may include two vacuum chambers 310 and 320 .
[0060] In one embodiment, the electron beam 152 can be in a vacuum chamber 310 (as shown). In other words, each electron of the electron beam 152 is in the vacuum chamber 310. In other words, each electron of the electron beam 152 is in the vacuum chamber 310 as it travels from the electron beam source 150 to the target layer 112.
[0061] In an embodiment, the vacuum in the vacuum chamber 310 may be a high vacuum, meaning that the mean free path (ie, the distance traveled between collisions) of the gas particles in the vacuum chamber 310 is greater than the size of the vacuum chamber 310 .
[0062] In one embodiment, the sample 190 may be in a vacuum chamber 320 (as shown). If the sample 190 does not require a vacuum, the vacuum chamber 320 may be omitted.
[0063] In one embodiment, the combination of the target layer 112 and the support layer 114 can serve as the walls of the vacuum chamber 310 and the vacuum chamber 320 (as shown).
[0064] The target layer is non-planar
[0065] In one embodiment, referring to Figure 4 , the target layer 112 can be non-planar. For example, in one embodiment, the target layer 112 can have a hemispherical shape (as shown). In one embodiment, the sample 190 can be located at the center of the hemisphere (as shown).
[0066] Typically, the target layer 112 may have a shape of a portion of a sphere. In one embodiment, the sample 190 may be located at the center of the sphere. The support layer 114 may, but need not, have a shape of a portion of a sphere.
[0067] The target layer includes a portion located in a recess in the support layer
[0068] In one embodiment, referring to Figure 5 , the target layer 112 may include discrete portions (eg, discrete portions 112p1 and 112p2) respectively located in recesses (eg, recesses 114r1 and 114r2) of the support layer 114, rather than Figure 1 These discrete portions of the target layer 112 can receive the electron beam 152 to generate X-rays for imaging as described above.
[0069] The incident points have different sizes
[0070] In one embodiment, referring to Figure 6A maximum dimension 112s1M of the first incident point 112s1 measured along a direction parallel to the surface of the target layer 112 at the first incident point 112s1 may be different from a maximum dimension 112s2M of the second incident point 112s2 measured along a direction parallel to the surface of the target layer 112 at the second incident point 112s2.
[0071] Although various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and are not intended to be limiting, with the true scope and spirit being indicated by the following claims.
Claims
1. A system comprising: target layer, support layer, and Radiation detectors; wherein the system is configured to generate an electron beam directed toward the target layer; wherein the target layer is configured to generate X-rays in response to the electron beam striking the target layer; wherein the support layer is configured to dissipate heat from the target layer; wherein the support layer is not non-transparent to X-rays; wherein the support layer and the target layer have different chemical compositions; Wherein, the support layer is located between the target layer and the radiation detector; wherein the support layer is located between the target layer and the sample; and The radiation detector is configured to capture an image of the sample based on an interaction between the sample and the X-rays.
2. The system according to claim 1, wherein: The electron beam is in a high vacuum.
3. The system according to claim 1, wherein: The electron beam comes from an electron beam source, and wherein the target layer is located between the electron beam source and the support layer.
4. The system according to claim 1, wherein: The sample is placed in a vacuum.
5. The system of claim 1 , further comprising a first vacuum chamber and a second vacuum chamber; in, The electron beam is in the first vacuum chamber; wherein the sample is in the second vacuum chamber; and The combination of the target layer and the support layer serves as the walls of the first vacuum chamber and the second vacuum chamber.
6. The system according to claim 1, wherein: The target layer includes platinum, lanthanide elements, copper, iron, chromium, tungsten or a combination thereof.
7. The system according to claim 1, wherein: The target layer has a shape of a portion of a sphere; and Wherein, the sample is located at the center of the sphere.
8. The system according to claim 1, wherein: The support layer is in direct physical contact with the target layer.
9. The system according to claim 1, wherein: One or more portions of the target layer configured to receive the electron beam are in direct physical contact with the support layer.
10. The system according to claim 1, wherein: The support layer includes beryllium or diamond.
11. The system according to claim 1, wherein: The sample is in direct physical contact with the support layer.
12. The system according to claim 1, wherein: The radiation detector is a photon counting detector.
13. The system of claim 1, wherein: The one or more discrete portions of the target layer are respectively located in one or more recesses in the support layer.
14. A method of using the system of any one of claims 1 to 13, the method comprising: directing the electron beam to a first incident point on the target layer, thereby generating a first X-ray from the first incident point toward the sample; as well as A first image of the sample is captured using the radiation detector based on an interaction between the sample and the first X-rays.
15. The method according to claim 14, further comprising: After taking the first image, guiding the electron beam to a second incident point on the target layer, thereby generating a second X-ray from the second incident point toward the sample; as well as A second image of the sample is captured using the radiation detector based on an interaction between the sample and the second X-rays.
16. The method of claim 15, further comprising reconstructing a three-dimensional image of the sample based on at least the first image and the second image.
17. The method according to claim 15, wherein: A maximum size of the first incident point measured along a direction parallel to the surface of the target layer at the first incident point is different from a maximum size of the second incident point measured along a direction parallel to the surface of the target layer at the second incident point.