Dry-type transformer for semiconductor equipment

Abstract

The invention relates to the technical field of transformers, in particular to a dry-type transformer for semiconductor equipment, which comprises an iron core winding unit formed by vacuum casting of epoxy resin; the surface of the iron core winding unit conductor is coated with the multi-layer nano ceramic insulating layer; the built-in liquid cooling channel module is integrated between the iron core winding unit layers; the electromagnetic shielding shell covers the whole transformer body; the intelligent monitoring system is installed on the electromagnetic shielding shell and used for monitoring the dry-type transformer; the safety is high, and the stability is good.

Description

Technical Field

[0001] The present invention relates to the technical field of transformers, in particular to a dry-type transformer for semiconductor equipment. Background Art

[0002] In modern electronics manufacturing, especially for semiconductor production equipment requiring high precision and performance, a stable and efficient power supply is a key factor in ensuring smooth production. Dry-type transformers are widely used in the power supply systems of semiconductor manufacturing equipment due to their oil-free operation, ease of maintenance, and environmental friendliness. However, as semiconductor process nodes continue to shrink and technological complexity increases, the requirements for power quality are becoming increasingly stringent, posing greater challenges to the design of dry-type transformers.

[0003] Although traditional dry-type transformers have made significant progress in insulation performance, they still face the risk of partial discharge or insulation breakdown when faced with high-temperature and high-voltage working environments. This not only affects the service life of the transformer itself, but may also pose a threat to the safety and stability of the entire production line. Summary of the Invention

[0004] In order to solve the above technical problems, the present invention provides a dry-type transformer for semiconductor equipment with high safety and good stability.

[0005] The dry-type transformer for semiconductor equipment of the present invention comprises: The iron core winding unit is formed by vacuum casting of epoxy resin; Multi-layer nano-ceramic insulation layer, covering the surface of the core winding unit conductor; Built-in liquid cooling channel module, integrated between the core winding unit layers; Electromagnetic shielding shell, covering the entire transformer body; Intelligent monitoring system, installed on the electromagnetic shielding housing, is used to monitor dry-type transformers.

[0006] As a preferred solution of the present invention, the core winding unit includes: The main magnetic circuit is composed of amorphous alloy iron core and silicon steel steel core in an interlaced lamination manner: The low-voltage winding and the high-voltage winding are coaxially nested in the main magnetic circuit, and the radial spacing between the low-voltage winding and the high-voltage winding is maintained by epoxy resin insulating bars.

[0007] As a preferred solution of the present invention, the core winding unit adopts a composite structure of an amorphous alloy iron core and a silicon steel core, wherein the amorphous alloy iron core occupies 30-50% of the cross-sectional area of the main magnetic circuit.

[0008] As a preferred solution of the present invention, a nanocrystalline transition layer is provided between the amorphous alloy iron core and the silicon steel iron core. The transition layer is composed of a Fe-Si-B-Cu alloy, and the grain size is ≤50nm.

[0009] As a preferred embodiment of the present invention, the multilayer nano-ceramic insulating layer is composed of alternately stacked aluminum nitride layers and silicon oxide layers, the thickness of a single layer of the aluminum nitride layer and the silicon oxide layer is 50-100 nm, and the total dielectric strength is ≥35 kV / mm.

[0010] As a preferred embodiment of the present invention, the built-in liquid cooling channel module includes: The spiral stainless steel microchannel tube is bonded between the core winding unit layers by a heat conductive adhesive, and the inlet and outlet headers of the spiral stainless steel microchannel tube pass through the electromagnetic shielding shell; Phase change cooling medium, melting point is 40-45℃; Distributed flow control valve, linked with intelligent monitoring system.

[0011] As a preferred solution of the present invention, a thermally conductive silicone grease interface layer is provided between the multi-layer nano-ceramic insulation layer and the built-in liquid cooling channel module, and its thermal conductivity is ≥5W / (m•K).

[0012] As a preferred solution of the present invention, the electromagnetic shielding shell has a three-layer structure, which is as follows from the inside to the outside: Permalloy shielding layer, thickness 0.5-1mm; Conductive rubber buffer layer, volume resistivity ≤10Ω•cm; Surface anodized aluminum protective layer.

[0013] As a preferred embodiment of the present invention, the intelligent monitoring system includes: Fiber Bragg grating temperature sensor array, arranged in the hot spot area of the core winding unit; A three-axis MEMS vibration sensor is installed on the yoke surface of the main magnetic circuit; The ultra-high frequency partial discharge detection module is installed outside the high-voltage winding outlet end, with a detection bandwidth of 300MHz-1.5GHz.

[0014] As a preferred solution of the present invention, the detection data of the fiber Bragg grating temperature sensor array and the distributed flow control valve form a closed-loop control. When the temperature of any monitoring point exceeds 65°C, the corresponding cooling circuit flow is automatically increased.

[0015] Compared with the prior art, the present invention has the following advantages: the core winding unit is vacuum-casted using epoxy resin, exhibiting excellent mechanical strength and electrical insulation properties, ensuring stable and efficient energy conversion. A multi-layer nano-ceramic insulation layer tightly covers the surface of the core winding unit conductor, serving as the main insulation protection structure. Leveraging the high insulation properties and high-temperature resistance of the nanomaterial, the insulation strength is significantly improved, effectively preventing partial discharge and insulation breakdown, and ensuring safe operation of the transformer. A built-in liquid cooling channel module is integrated between the core winding unit layers, rapidly dissipating heat generated during operation. Compared with traditional heat dissipation methods, this significantly improves heat dissipation efficiency, reduces winding temperature, and extends the service life of the transformer. An electromagnetic shielding enclosure covers the entire transformer body, effectively isolating it from external electromagnetic interference while suppressing the leakage of the transformer's own electromagnetic radiation, preventing any impact on the precision electronic components of semiconductor equipment and ensuring electromagnetic compatibility of the equipment. An intelligent monitoring system, installed in the electromagnetic shielding enclosure, monitors key parameters of the dry-type transformer, such as temperature, voltage, and current, in real time, promptly detecting anomalies and issuing warnings, facilitating rapid troubleshooting by operation and maintenance personnel, enabling intelligent management and improving transformer operational reliability and maintenance efficiency. These components complement each other, providing reliable power support for the stable operation of semiconductor equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the main structure of the present invention; Figure 2 It is a schematic diagram of the internal structure of the present invention; Figure 3 yes Figure 2 A schematic diagram of the enlarged structure of the middle B part; Figure 4 yes Figure 2 A schematic diagram of the enlarged structure of the middle part A; Figure 5 It is a schematic diagram of the process structure of the present invention; Markings in the accompanying drawings: 1. Iron core winding unit; 11. Amorphous alloy iron core; 12. Silicon steel steel core; 13. Low-voltage winding; 14. High-voltage winding; 2. Multi-layer nano-ceramic insulation layer; 21. Aluminum nitride layer; 22. Silicon oxide layer; 3. Built-in liquid cooling channel module; 31. Spiral stainless steel microchannel tube; 32. Phase change cooling medium; 33. Distributed flow control valve; 4. Electromagnetic shielding shell; 41. Permalloy shielding layer; 42. Conductive rubber buffer layer; 43. Surface anodized aluminum protective layer; 5. Intelligent monitoring system; 51. Fiber Bragg grating temperature sensor array; 52. Three-axis MEMS vibration sensor; 53. Ultra-high frequency partial discharge detection module. DETAILED DESCRIPTION

[0017] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0018] Reference Figure 1-Figure 2 This embodiment provides a dry-type transformer for semiconductor equipment, comprising: The core winding unit 1 is the core energy conversion component of the transformer and is formed by vacuum casting of epoxy resin; A multi-layer nano-ceramic insulation layer 2 is coated on the conductor surface of the core winding unit 1 and serves as the main insulation protection structure; Built-in liquid cooling channel module 3, integrated between the layers of the core winding unit 1, to achieve efficient heat dissipation management; The electromagnetic shielding shell 4 covers the entire transformer body to isolate external electromagnetic interference and suppress the transformer's external electromagnetic radiation; An intelligent monitoring system 5 is installed on the electromagnetic shielding housing 4 and is used to monitor the dry-type transformer; In this embodiment, the core winding unit 1 is vacuum-casted using epoxy resin, exhibiting excellent mechanical strength and electrical insulation properties, ensuring stable and efficient energy conversion. A multi-layer nano-ceramic insulation layer 2 tightly covers the conductor surface of the core winding unit 1, serving as the primary insulation protection structure. Leveraging the nanomaterial's high insulation properties and high-temperature resistance, it significantly enhances insulation strength, effectively preventing partial discharge and insulation breakdown, and ensuring safe operation of the transformer. Built-in liquid cooling channel modules 3 are integrated between the layers of the core winding unit 1, rapidly dissipating heat generated during operation. Compared to traditional heat dissipation methods, this significantly improves heat dissipation efficiency, reduces winding temperature, and extends the transformer's service life. An electromagnetic shielding housing 4 encloses the entire transformer, effectively isolating it from external electromagnetic interference and suppressing the transformer's own electromagnetic radiation from leaking out, preventing any impact on the precision electronic components of semiconductor equipment and ensuring electromagnetic compatibility. An intelligent monitoring system 5, installed within the electromagnetic shielding housing 4, monitors key parameters of the dry-type transformer, such as temperature, voltage, and current, in real time, promptly detecting anomalies and issuing warnings. This facilitates rapid troubleshooting by maintenance personnel, enabling intelligent management and improving transformer reliability and maintenance efficiency. These components complement each other, providing reliable power support for the stable operation of semiconductor equipment.

[0019] As a preferred embodiment of the above technical solution, Figures 1 to 5 As shown, the core winding unit 1 includes: The amorphous alloy iron core 11 and the silicon steel core 12 are laminated in an interlaced manner to form the main magnetic circuit: The low voltage winding 13 and the high voltage winding 14 are coaxially nested in the main magnetic circuit, and the radial spacing between the low voltage winding 13 and the high voltage winding 14 is maintained by epoxy resin insulating bars; The core winding unit 1 adopts a composite structure of an amorphous alloy iron core 11 and a silicon steel core 12, wherein the amorphous alloy iron core 11 occupies 30-50% of the main magnetic circuit cross-sectional area; In this embodiment, the amorphous alloy iron core 11 and the silicon steel core 12 are staggered and laminated, combining the advantages of the two. The low loss characteristics of the amorphous alloy iron core 11 reduce the no-load loss, and the high saturation magnetic induction strength of the silicon steel core 12 ensures the stability of the magnetic circuit. The 30-50% proportion of the amorphous alloy iron core 11 optimizes the magnetic circuit performance, while reducing energy loss and improving the magnetic permeability. The low-voltage winding 13 and the high-voltage winding 14 are coaxially nested in the main magnetic circuit, with a compact layout and space saving. The epoxy resin insulating struts maintain radial spacing to ensure electrical insulation safety, prevent short circuits between windings, and improve insulation reliability. This structural design enables the iron core winding unit 1 to have the characteristics of high efficiency and energy saving, stable operation and reliable insulation, reduce the operating cost of the transformer, enhance overload capacity and stability, provide efficient and stable power conversion for semiconductor equipment, and adapt to the high-precision and high-stability power requirements of semiconductor manufacturing.

[0020] As a preferred embodiment of the above technical solution, Figures 2 to 5 As shown, the multilayer nano-ceramic insulating layer 2 is composed of an aluminum nitride layer 21 and a silicon oxide layer 22 stacked alternately. The thickness of a single layer formed by the aluminum nitride layer 21 and the silicon oxide layer 22 is 50-100 nm, and the total dielectric strength is ≥35 kV / mm; In this embodiment, the aluminum nitride layer 21 has excellent thermal conductivity and mechanical strength, can effectively conduct the heat generated by the core winding unit 1 during operation, prevent local overheating, and improve the overall toughness of the insulation layer. The silicon oxide layer 22, with its high chemical stability and insulation properties, effectively isolates the intrusion of external moisture and corrosive substances, avoids conductor oxidation and insulation aging, and the single layer thickness of 50-100nm ensures the nano-level uniformity and density of the material, reduces air gaps and defects, and improves dielectric properties. The total dielectric strength ≥35kV / mm ensures that the insulation layer is not broken down in a high voltage environment, can withstand the electrical stress under complex working conditions of semiconductor equipment, effectively prevents local discharge and surface flashover, and the alternating stacking structure forms a composite insulation barrier to achieve complementary advantages, enhance the insulation layer's resistance to electrical tree growth and electrical aging, extend the insulation life of the transformer, provide reliable protection for the power safety of semiconductor equipment, and ensure the stable operation of the dry-type transformer under high precision and high reliability requirements.

[0021] Specifically, such as Figures 2 to 5 As shown, the built-in liquid cooling channel module 3 includes: The spiral stainless steel microchannel tube 31 is bonded between the layers of the core winding unit 1 by means of a heat-conducting adhesive, and the inlet and outlet headers of the spiral stainless steel microchannel tube 31 pass through the electromagnetic shielding shell 4; Phase change cooling medium 32, melting point is 40-45°C; Distributed flow control valve 33, linked to intelligent monitoring system 5; In this embodiment, spiral stainless steel microchannel tubes 31 are bonded between the layers of the core winding unit 1 using thermally conductive adhesive. Their spiral structure increases the heat dissipation area. The stainless steel material is resistant to high temperatures and corrosion, ensuring long-term stable operation. The inlet and outlet headers extend through the electromagnetic shielding housing 4 to facilitate the circulation of the cooling medium. The phase change cooling medium 32, with a melting point of 40-45°C, absorbs the latent heat of phase change when the winding temperature rises, efficiently removing heat. Compared with traditional liquid cooling, it can absorb more heat, improve heat dissipation efficiency, and reduce winding temperature fluctuations. The distributed flow control valve 33 is linked to the intelligent monitoring system 5 to dynamically adjust the cooling medium flow rate in real time based on monitored parameters such as temperature and load. It increases the flow rate in high-heat areas to enhance heat dissipation and reduces the flow rate at low loads to reduce energy consumption, thus realizing intelligent adaptive control of the heat dissipation system and avoiding resource waste. This module quickly dissipates the heat generated by the core winding unit 1, maintaining its operation within a safe temperature range, effectively delaying insulation aging, improving the overload capacity and reliability of the transformer, and meeting the stringent requirements of semiconductor equipment for high stability and high heat dissipation efficiency of power supply equipment.

[0022] As a preferred embodiment of the above technical solution, Figure 5 As shown, a thermal conductive silicone grease interface layer is provided between the multi-layer nano-ceramic insulation layer 2 and the built-in liquid cooling channel module 3, and its thermal conductivity is ≥5W / (m•K); In this embodiment, the interface layer can effectively fill the tiny air gap between the insulation layer and the liquid-cooling channel module, eliminating thermal resistance and quickly and efficiently transferring the heat of the core winding unit 1 conducted by the multi-layer nano-ceramic insulation layer 2 to the built-in liquid-cooling channel module 3. Combined with the spiral stainless steel microchannel tube 31 and the phase-change cooling medium 32, the overall heat dissipation efficiency is significantly improved, reducing the operating temperature of the winding. At the same time, the thermal grease itself has excellent insulation properties. While enhancing heat conduction, it does not damage the insulation protection system of the multi-layer nano-ceramic insulation layer 2, ensuring the insulation strength of the transformer and preventing insulation material aging or partial discharge caused by heat accumulation. In addition, the high thermal conductivity of the silicone grease interface layer can also improve the response speed of the heat dissipation system, allowing the distributed flow control valve 33 to more accurately adjust the cooling medium flow based on feedback from the intelligent monitoring system 5, achieving efficient utilization of heat dissipation resources, further extending the service life of the transformer, providing more stable and reliable power support for semiconductor equipment, and ensuring the safe operation of the equipment under high-precision and high-load conditions.

[0023] Specifically, as shown in Figure 5, the electromagnetic shielding shell 4 has a three-layer structure, which is as follows from the inside to the outside: Permalloy shielding layer 41, thickness 0.5-1 mm; Conductive rubber buffer layer 42, volume resistivity ≤ 10Ω•cm; Surface anodized aluminum protective layer 43; In this embodiment, the permalloy shielding layer 41 has a thickness of 0.5-1 mm. Due to its high magnetic permeability, it can effectively absorb and guide external magnetic fields, while suppressing the leakage of electromagnetic radiation generated by the transformer itself, reducing the impact of electromagnetic interference on the precision components of semiconductor equipment, and ensuring the electromagnetic compatibility of the equipment. The conductive rubber buffer layer 42 has a volume resistivity of ≤10Ω·cm and combines electrical conductivity with buffering elasticity. It can absorb external mechanical impact and prevent damage to the permalloy shielding layer 41 due to vibration or collision. At the same time, it can conduct electromagnetic energy that is not completely isolated by the shielding layer, further enhancing the shielding effect. The surface anodized aluminum protective layer 43 has high hardness and corrosion resistance, and can resist external moisture, corrosive gases, and mechanical wear. It protects the internal two-layer structure for long-term stable operation, extends the service life of the electromagnetic shielding shell 4, ensures the continuous and stable operation of the transformer in complex industrial environments, effectively reduces the impact of electromagnetic interference on semiconductor equipment, and improves the reliability and stability of the overall system operation.

[0024] As a preferred embodiment of the above technical solution, the intelligent monitoring system 5 includes: The fiber Bragg grating temperature sensor array 51 is arranged in the hot spot area of the core winding unit 1; A three-axis MEMS vibration sensor 52 is mounted on the yoke surface of the main magnetic circuit; The ultra-high frequency partial discharge detection module 53 is mounted outside the outlet end of the high voltage winding 14 and has a detection bandwidth of 300MHz-1.5GHz; In this embodiment, the fiber Bragg grating temperature sensor array 51 is arranged in the hot spot area of the core winding unit 1, and the advantages of optical fiber sensing technology in anti-electromagnetic interference and high precision are used to monitor the winding temperature distribution in real time, and to warn of overheating faults in advance to avoid insulation aging or burning due to local high temperature. The three-axis MEMS vibration sensor 52 is installed on the surface of the main magnetic circuit yoke iron, which can capture the vibration signal of the staggered laminated structure of the amorphous alloy iron core 11 and the silicon steel iron core 12. By analyzing the changes in vibration frequency and amplitude, mechanical faults such as core loosening and winding deformation are judged to ensure the stability of the magnetic circuit. The ultra-high frequency partial discharge detection module 53 is set On the outside of the high-voltage winding 14 outgoing line end, the detection bandwidth covers 300MHz-1.5GHz, which can keenly capture local discharge signals such as air gap discharge and surface flashover in the insulation layer. Combined with the dielectric properties of the multi-layer nano-ceramic insulation layer 2, it can detect insulation defects in advance and prevent insulation breakdown accidents. The three types of monitoring units work together to build a multi-dimensional monitoring system covering temperature, mechanical vibration, and electrical discharge, providing real-time data support for intelligent operation and maintenance, facilitating operation and maintenance personnel to quickly locate fault hazards and formulate targeted maintenance strategies, thereby improving the reliability of transformer operation and the continuity of semiconductor equipment production lines, and reducing the risk of unplanned downtime.

[0025] Specifically, such as Figure 5As shown, the detection data of the fiber Bragg grating temperature sensor array 51 and the distributed flow control valve 33 form a closed-loop control. When the temperature of any monitoring point exceeds 65°C, the flow rate of the corresponding cooling circuit is automatically increased; In this embodiment, when the temperature of any hot spot area of the core winding unit 1 is monitored to exceed 65°C, the sensor array 51 transmits the temperature data to the intelligent monitoring system 5 in real time. The system immediately triggers the distributed flow control valve 33 to increase the flow of the phase change cooling medium 32 in the corresponding cooling circuit, and strengthens the heat dissipation in this area through the spiral stainless steel microchannel tube 31, quickly reducing the winding temperature, and avoiding local overheating causing insulation aging or failure. This closed-loop control mechanism has a fast response speed and high control accuracy. It can dynamically allocate heat dissipation resources according to the actual temperature distribution, timely enhance the heat dissipation capacity under high load conditions, and automatically reduce the flow rate to reduce energy consumption under low load. Compared with the traditional fixed flow heat dissipation method, it significantly improves the heat dissipation efficiency and energy utilization rate, while reducing the long-term operating load of the built-in liquid cooling channel module 3, extending the service life of the cooling system, ensuring that the transformer always maintains safe and stable operation under complex working conditions of semiconductor equipment, and providing strong guarantee for continuous and reliable power supply of the production line.

[0026] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A dry-type transformer for semiconductor equipment, characterized in that: include: The iron core winding unit (1) is formed by vacuum casting of epoxy resin; A multi-layer nano-ceramic insulation layer (2) is coated on the conductor surface of the iron core winding unit (1); A built-in liquid cooling channel module (3) integrated between the layers of the core winding unit (1); An electromagnetic shielding shell (4) covering the entire transformer body; An intelligent monitoring system (5) is installed on the electromagnetic shielding housing (4) and is used to monitor the dry-type transformer.

2. The dry-type transformer for semiconductor equipment according to claim 1, wherein: The iron core winding unit (1) comprises: The amorphous alloy iron core (11) and the silicon steel core (12) are formed into a main magnetic circuit by staggered lamination: The low-voltage winding (13) and the high-voltage winding (14) are coaxially nested in the main magnetic circuit, and the low-voltage winding (13) and the high-voltage winding (14) are kept at a radial distance by epoxy resin insulating bars.

3. The dry-type transformer for semiconductor equipment according to claim 2, wherein: The iron core winding unit (1) adopts a composite structure of the amorphous alloy iron core (11) and the silicon steel core (12), wherein the amorphous alloy iron core (11) occupies 30-50% of the main magnetic circuit cross-sectional area.

4. The dry-type transformer for semiconductor equipment according to claim 2, wherein: A nanocrystalline transition layer is provided between the amorphous alloy iron core (11) and the silicon steel core (12), the transition layer being composed of a Fe-Si-B-Cu alloy with a grain size of ≤50 nm.

5. The dry-type transformer for semiconductor equipment according to claim 1, wherein: The multilayer nano-ceramic insulating layer (2) is composed of alternately stacked aluminum nitride layers (21) and silicon oxide layers (22); the aluminum nitride layers (21) and the silicon oxide layers (22) form a single layer with a thickness of 50-100 nm and a total dielectric strength of ≥35 kV / mm.

6. The dry-type transformer for semiconductor equipment according to claim 2, wherein: The built-in liquid cooling channel module (3) comprises: A spiral stainless steel microchannel tube (31) is bonded between the layers of the core winding unit (1) by means of a heat-conducting adhesive, and an inlet header and an outlet header of the spiral stainless steel microchannel tube (31) pass through the electromagnetic shielding housing (4); Phase change cooling medium (32) having a melting point of 40-45°C; The distributed flow control valve (33) is linked to the intelligent monitoring system (5).

7. The dry-type transformer for semiconductor equipment according to claim 1, wherein: A thermally conductive silicone grease interface layer is provided between the multi-layer nano-ceramic insulation layer (2) and the built-in liquid cooling channel module (3), and its thermal conductivity is ≥5W / (m·K).

8. The dry-type transformer for semiconductor equipment according to claim 1, wherein: The electromagnetic shielding shell (4) has a three-layer structure, which is as follows from the inside to the outside: Permalloy shielding layer (41), thickness 0.5-1 mm; Conductive rubber buffer layer (42), volume resistivity ≤ 10Ω•cm; The surface is provided with an anodized aluminum protective layer (43).

9. The dry-type transformer for semiconductor equipment according to claim 6, wherein: The intelligent monitoring system (5) comprises: A fiber Bragg grating temperature sensor array (51) is arranged in a hot spot area of the core winding unit (1); A three-axis MEMS vibration sensor (52) mounted on the yoke surface of the main magnetic circuit; An ultra-high frequency partial discharge detection module (53) is sleeved on the outside of the outlet end of the high-voltage winding (14), and has a detection bandwidth of 300 MHz to 1.5 GHz.

10. The dry-type transformer for semiconductor equipment according to claim 9, wherein: The detection data of the fiber Bragg grating temperature sensor array (51) and the distributed flow control valve (33) form a closed-loop control, and when the temperature of any monitoring point exceeds 65° C., the corresponding cooling circuit flow is automatically increased.

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