Transformer, electronic device, vehicle, device parameter design method and electronic equipment
By introducing the first buffer circuit and the second buffer circuit into the transformer circuit, energy is absorbed and consumed, the voltage spike problem in the transformer circuit is solved, the reliability and service life of the transformer are improved, and the cost is maintained.
Patent Information
- Application Number
- CN202510496019.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-18
- Publication Date
- 2025-08-12
AI Technical Summary
There are voltage spikes in existing transformer circuits, which may lead to aging, damage to the device and shortened service life.
Using a transformer design including a first buffer circuit and a second buffer circuit, the first buffer circuit composed of a first capacitor, a resistor, and a first diode, and the second buffer circuit composed of at least one second capacitor absorbs and consumes energy in the transformer circuit to reduce voltage spikes.
Effectively reduce voltage spikes in the transformer circuit, improve the reliability and service life of the transformer, while avoiding the increase of control parts and keeping the production cost basically unchanged.
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Figure CN120473322A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of electronic and electrical technology, and in particular relates to a transformer, an electronic device, a vehicle, a design method for device parameters, an electronic device, a non-transitory computer-readable storage medium, and a computer program product. Background Art
[0002] Transformers play a critical role in modern production and life. In the field of power transmission, transformers convert high-voltage electricity from the power grid into safe and usable voltages, allowing electricity to flow into factories and homes, supporting the operation of various electrical devices, ensuring the orderly progress of industrial production, and maintaining the normal rhythm of daily life.
[0003] Voltage spikes are hidden in the transformer circuit. These instantaneous high voltage spikes may break down the components of the transformer's internal circuit, accelerating the aging and damage of some components, shortening the transformer's service life, and even causing unexpected power outages. Therefore, reducing voltage spikes in the transformer circuit is of great significance. Summary of the Invention
[0004] The present application aims to address at least one of the technical problems existing in the prior art. To this end, the present application proposes a transformer, an electronic device, a vehicle, a method for designing device parameters, an electronic device, a non-transitory computer-readable storage medium, and a computer program product, which can reduce voltage spikes in transformer circuits and improve the reliability of transformer circuits.
[0005] In a first aspect, the present application provides a transformer, comprising a transformer circuit, a first buffer circuit, and a second buffer circuit, wherein the first buffer circuit comprises a first capacitor, a resistor, and a first diode; the second buffer circuit comprises at least one second capacitor, one end of the second capacitor being connected to the first buffer circuit, and the other end being connected to the transformer circuit.
[0006] In a second aspect, the present application provides an electronic device comprising the above-mentioned transformer.
[0007] In a third aspect, the present application provides a vehicle comprising the above-mentioned electronic device.
[0008] In a fourth aspect, the present application provides a device parameter design method for designing the device parameters of the first buffer circuit of the above-mentioned transformer, the device parameter design method comprising determining the clamping voltage and the absorbed energy based on the device parameters of the transformer circuit and the capacitance of the second capacitor; and designing the device parameters of the first buffer circuit based on the clamping voltage and the absorbed energy.
[0009] In a fifth aspect, the present application provides an electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the above-mentioned method for designing device parameters when executing the program.
[0010] In a sixth aspect, the present application provides a non-transitory computer-readable storage medium having a computer program stored thereon, which implements the above-mentioned device parameter design method when executed by a processor.
[0011] In a seventh aspect, the present application provides a computer program product, comprising a computer program, which implements the above-mentioned device parameter design method when executed by a processor.
[0012] The transformer, electronic device, vehicle, device parameter design method, electronic device, non-transitory computer-readable storage medium, and computer program product provided by the embodiments of the present application utilize a second buffer circuit to first absorb a portion of the energy in the transformer circuit, and then utilize the first buffer circuit to absorb and dissipate the energy in the transformer circuit and the energy in the second buffer circuit. This effectively reduces voltage spikes in the transformer circuit, improves the reliability of the transformer circuit, avoids adding a control unit, and, without adding excessive components, essentially keeps the transformer production cost unchanged.
[0013] Additional aspects and advantages of the embodiments of the present application will be given in part in the description below, and in part will become obvious from the description below, or will be learned through practice of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0015] Figure 1 This is a first structural diagram of a transformer provided in an embodiment of the present application;
[0016] Figure 2 is a second structural schematic diagram of the transformer provided in an embodiment of the present application;
[0017] Figure 3 1 is a third structural diagram of a transformer provided in an embodiment of the present application;
[0018] Figure 4 is a schematic structural diagram of an electronic device provided in an embodiment of the present application;
[0019] Figure 5 is a schematic structural diagram of a vehicle provided in an embodiment of the present application;
[0020] Figure 6This is a first flow chart of the device parameter design method provided in an embodiment of the present application;
[0021] Figure 7 This is a second flow chart of the device parameter design method provided in an embodiment of the present application;
[0022] Figure 8 3 is a schematic diagram of a third flow chart of the method for designing device parameters provided in an embodiment of the present application;
[0023] Figure 9 This is a fourth flow chart of the device parameter design method provided in an embodiment of the present application;
[0024] Figure 10 This is a fifth flow chart of the device parameter design method provided in an embodiment of the present application;
[0025] Figure 11 This is a schematic diagram of a module of a device parameter design apparatus provided in an embodiment of the present application;
[0026] Figure 12 It is a structural diagram of an electronic device provided in an embodiment of the present application.
[0027] Figure 1-3 Description of the reference numerals:
[0028] Transformer 100, transformer circuit 10, magnetic core 11, first buffer circuit 20, first capacitor 21, resistor 22, first diode 23, second buffer circuit 30, second capacitor 31, primary circuit 40, switch element 41, excitation inductor 42, primary leakage inductor 43, switch tube 44, switch capacitor 45, source 46, gate 47, drain 48, secondary circuit 50, secondary leakage inductor 51, second diode 52, secondary capacitor 53, secondary coil 54, secondary resistor 55, power supply 60. DETAILED DESCRIPTION
[0029] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention and are not to be construed as limiting the present invention.
[0030] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.
[0031] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed connections, removable connections, or integral connections. They may refer to mechanical connections or electrical connections. They may refer to direct connections or indirect connections through an intermediary, and they may refer to internal communication between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in the present invention based on the specific circumstances.
[0032] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numbers and / or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.
[0033] See also Figure 1 、 Figure 2 and Figure 3 , Figure 1 This is a first structural diagram of a transformer provided in an embodiment of the present application. Figure 2 is a second structural diagram of a transformer provided in an embodiment of the present application, Figure 3 This is a third structural diagram of a transformer provided in an embodiment of the present application. The transformer is described in detail below:
[0034] The transformer 100 includes a transformer circuit 10, a first buffer circuit 20, and a second buffer circuit 30; the first buffer circuit 20 includes a first capacitor 21, a resistor 22, and a first diode 23; the second buffer circuit 30 includes at least one second capacitor 31, one end of the second capacitor 31 is connected to the first buffer circuit 20, and the other end is connected to the transformer circuit 10.
[0035] The second snubber circuit 30 first absorbs a portion of the energy in the transformer circuit 10. The first snubber circuit 20 then absorbs and dissipates the energy in the transformer circuit 10 and the second snubber circuit 30. This effectively reduces voltage spikes in the transformer circuit 10, improves the reliability of the transformer circuit 10, avoids adding additional control components, and reduces the production cost of the transformer 100.
[0036] Optionally, the first capacitor 21 and the second capacitor 31 may be ceramic capacitors, thin film capacitors, etc., and the first diode 23 may be a silicon diode, a germanium diode, a silicon carbide diode, a gallium nitride diode, etc., which is not limited in the embodiment of the present application.
[0037] In some embodiments, please refer to Figure 1 、 Figure 2 and Figure 3 The first capacitor 21 and the resistor 22 are connected in parallel, and the first capacitor 21 and the resistor 22 are both connected in series with the first diode 23.
[0038] When the first diode 23 is not conducting, the first capacitor 21 and the resistor 22 form a loop. The first capacitor 21, having absorbed energy from the transformer circuit 10, discharges energy into the resistor 22. The energy in the first capacitor 21 is gradually converted into heat energy on the resistor 22 and dissipated as heat until the voltage across the first capacitor 21 drops to zero, completing the discharge process of the first capacitor 21. During the discharge process of the first capacitor 21, if the first diode 23 becomes conducting again, the first capacitor 21 interrupts the discharge process. The second buffer circuit 30 and the transformer circuit 10 charge the first capacitor 21 while simultaneously releasing energy into the resistor 22.
[0039] In this way, the first diode 23 is cyclically turned on and off, which can continuously consume excess energy in the transformer circuit 10 , reduce voltage spikes in the transformer circuit 10 , improve the reliability of the transformer 100 , and extend the service life of the transformer 100 .
[0040] In some embodiments, please refer to Figure 1 、 Figure 2 and Figure 3The transformer circuit 10 includes a primary circuit 40 and a secondary circuit 50. The primary circuit 40 includes a switch element 41, an excitation inductor 42, and a primary leakage inductor 43. The first end of the first capacitor 21 and the resistor 22 in the first buffer circuit 20 is connected to the primary leakage inductor 43, and the second end of the first diode 23 is connected to the line between the switch element 41 and the excitation inductor 42.
[0041] When the switch 41 is on, the power supply 60 in the transformer 100 forms a circuit with the magnetizing inductor 42 and the primary leakage inductor 43. The power supply 60 charges the magnetizing inductor 42 and the primary leakage inductor 43, causing the energy stored in the magnetizing inductor 42 and the primary leakage inductor 43 to continuously increase. The first diode 23 becomes non-conductive, and the first capacitor 21 discharges the current into the resistor 22. At the moment the switch 41 is turned off, the current in the primary circuit 40 flowing through the magnetizing inductor 42 and the primary leakage inductor 43 reaches its maximum value and then continuously decreases. Because the current flowing through the magnetizing inductor 42 and the primary leakage inductor 43 cannot change suddenly, the current flowing through the magnetizing inductor 42 and the primary leakage inductor 43 acts as a freewheeling current to charge the switch 41, generating a very high voltage spike across the switch 41.
[0042] Since the second capacitor 31 is connected to the first buffer circuit 20 at one end and connected to the transformer circuit 10 at the other end, a portion of the current passing through the excitation inductor 42 and the primary leakage inductor 43 will flow to the second capacitor 31, reducing the current for freewheeling charging the switch element 41 and reducing the voltage spike across the switch element 41.
[0043] When the voltage across the switch element 41 is greater than the sum of the power supply voltage and the voltage across the first capacitor 21, the first diode 23 is turned on, the second capacitor 31 and the primary leakage inductance 43 charge the first capacitor 21, and the voltage across the first capacitor 21 begins to increase; when the voltage across the switch element 41 is not greater than the sum of the power supply voltage and the voltage across the first capacitor 21, the first diode 23 is disconnected, the first capacitor 21 discharges to the resistor 22, and the energy in the first capacitor 21 is gradually converted into heat energy on the resistor 22 and dissipated.
[0044] Optionally, the switch element 41 can be a metal-oxide-semiconductor field-effect transistor (MOSFET), a bipolar junction transistor (BJT), an insulated-gate bipolar transistor (IGBT), etc., which is not limited in the embodiment of the present application.
[0045] The excitation inductance 42 and the primary leakage inductance 43 together constitute the primary winding in the transformer 100. The excitation inductance 42 corresponds to the part of the winding in the primary winding that participates in magnetic field coupling and transfers energy to the secondary circuit 50. The primary leakage inductance 43 corresponds to the winding in the primary winding other than the part of the winding corresponding to the excitation inductance 42. The winding corresponding to the primary leakage inductance 43 cannot transfer energy from the primary circuit 40 to the secondary circuit 50.
[0046] Optionally, the primary winding may be a copper winding, an aluminum winding, etc., which is not limited in the embodiment of the present application.
[0047] In some embodiments, please refer to Figure 1 、 Figure 2 and Figure 3 The anode of the first diode 23 is connected to the line between the switch element 41 and the excitation inductor 42 , and the cathode of the first diode 23 is connected to the first capacitor 21 and the resistor 22 .
[0048] This ensures that when the switch 41 is turned on, the anode voltage of the first diode 23 is less than the cathode voltage, the first diode 23 is turned off, the first capacitor 21 continues to discharge into the resistor 22, and the energy in the first capacitor 21 is gradually converted into heat energy on the resistor 22 and dissipated. When the switch 41 is turned off and the voltage across the switch 41 rises to a value greater than the sum of the power supply voltage and the voltage across the first capacitor 21, the first diode 23 is turned on, the second capacitor 31 and the primary leakage inductance 43 charge the first capacitor 21, and the voltage across the first capacitor 21 begins to increase.
[0049] In some embodiments, see Figure 2 One end of the second capacitor 31 is connected to the first end, and the other end is connected to the secondary circuit 50.
[0050] When the switch 41 is disconnected, the secondary circuit 50 charges the second capacitor 31, reducing the current in the secondary circuit 50. Based on the relationship between the primary and secondary currents of the transformer 100 (the currents in the primary and secondary windings are inversely proportional to the number of turns), the current in the primary circuit 40 flowing through the primary leakage inductance 43 and the magnetizing inductance 42 also decreases. This reduces the voltage spike across the switch 41.
[0051] When the voltage across the switch element 41 is greater than the sum of the power supply voltage and the voltage across the first capacitor 21, the first diode 23 is turned on, and the second capacitor 31 transfers energy to the first capacitor 21 through electromagnetic induction between the primary winding and the secondary winding of the transformer 100, and the voltage across the first capacitor 21 continues to increase.
[0052] In some embodiments, see Figure 3 , the second capacitor 31 is connected in parallel with the first buffer circuit 20 .
[0053] When the switch 41 is disconnected, the primary leakage inductor 43 in the primary circuit 40 charges the second capacitor 31. The current flowing through the primary leakage inductor 43 in the primary circuit 40 decreases, reducing the current used for freewheeling charging the switch 41 and lowering the voltage spike across the switch 41. When the voltage across the switch 41 is greater than the sum of the power supply voltage and the voltage across the first capacitor 21, the first diode 23 turns on, and the second capacitor 31 transfers energy directly to the first capacitor 21 through the first diode 23, causing the voltage across the first capacitor 21 to continuously increase.
[0054] In some embodiments, see Figure 1 The at least one second capacitor 31 includes two second capacitors 31 , one of which is connected in parallel to the first buffer circuit 20 ; one end of the other second capacitor 31 is connected to the first end, and the other end is connected to the secondary circuit 50 .
[0055] When the switch 41 is disconnected, the primary leakage inductor 43 charges the second capacitor 31 connected in parallel with the first snubber circuit 20, and the secondary circuit 50 charges the second capacitor 31. This effectively reduces the freewheeling current charging the switch 41, effectively reduces the voltage spike across the switch 41, extends the service life of the switch 41, and improves the reliability of the transformer 100.
[0056] When the voltage across the switch 41 is greater than the sum of the power supply voltage and the voltage across the first capacitor 21 , the first diode 23 is turned on, and the two second capacitors 31 transfer energy to the first capacitor 21 respectively, and the voltage across the first capacitor 21 continues to increase.
[0057] In some embodiments, see Figure 1 and Figure 2 One end of the second capacitor 31 connected to the secondary circuit 50 is connected to the secondary leakage inductance 51 of the secondary circuit 50 .
[0058] The secondary leakage inductance 51 refers to the inductance formed when the magnetic flux generated in the secondary coil 54 is not coupled to the primary coil but returns to the secondary coil 54 through a medium such as air.
[0059] When the switch 41 is disconnected, the secondary leakage inductor 51 charges the second capacitor 31, reducing the current in the secondary circuit 50. Based on the relationship between the primary and secondary currents of the transformer 100 (the currents in the primary and secondary windings are inversely proportional to the corresponding number of turns), the current in the primary circuit 40 passing through the primary leakage inductor 43 and the magnetizing inductor 42 also decreases, reducing the freewheeling current charging the switch 41. This reduces the voltage spike across the switch 41 and extends the service life of the switch 41.
[0060] In some embodiments, see Figure 1 and Figure 2 The secondary circuit 50 includes a second diode 52 and a secondary capacitor 53 . The anode of the second diode 52 is connected to the second capacitor 31 connected to the secondary circuit 50 , and the cathode is connected to the secondary capacitor 53 .
[0061] When the voltage across the switch element 41 is greater than the sum of the power supply voltage and the secondary output voltage converted to the primary voltage (the secondary output voltage and the primary voltage are proportional to the corresponding number of turns), the second diode 52 is turned on, and the excitation inductor 42 in the primary circuit 40 transfers energy to the secondary circuit 50 through electromagnetic induction. The secondary circuit 50 charges the secondary capacitor 53 through the second diode 52. The secondary capacitor 53 is connected in parallel with the load and outputs electrical energy to the load. When the second diode 52 is disconnected, the secondary capacitor 53 releases energy to the load, maintaining the stability of the output voltage to the load.
[0062] Optionally, the second diode 52 may be a silicon diode, a germanium diode, a silicon carbide diode, a gallium nitride diode, etc., and the secondary capacitor 53 may be a ceramic capacitor, a thin film capacitor, etc., which is not limited in the embodiment of the present application.
[0063] In some embodiments, see Figure 1 、 Figure 2 and Figure 3 The switch element 41 includes a switch tube 44 and a switch capacitor 45 . The switch element 41 includes a source 46 , a gate 47 and a drain 48 . The switch capacitor 45 is connected to the source 46 and the drain 48 .
[0064] When the switch element 41 is made of a semiconductor material, the physical structure of the source 46, gate 47, and drain 48 of the switch element 41 results in the semiconductor region between the source 46 and drain 48 forming a structure similar to a parallel plate capacitor, which is equivalent to the switching capacitor 45. The switching capacitor 45 is an inherent property of the physical structure of the switch element 41. The charging and discharging of the switching capacitor 45 will extend the switching time of the switch element 41. However, an appropriate switching capacitor 45 can smooth the switching process, reduce sudden changes in voltage and current, and thus reduce switching losses of the switch element 41.
[0065] When the switch element 41 is disconnected, the current flowing through the magnetizing inductor 42 and the primary leakage inductor 43 charges the switch capacitor 45 in the switch element 41, generating a high voltage spike across the switch capacitor 45. The first snubber circuit 20 and the second snubber circuit 30 effectively reduce the voltage spike across the switch capacitor 45, extending the service life of the switch element 41 and improving the reliability of the transformer 100.
[0066] In some embodiments, please refer to Figure 1 、 Figure 2 and Figure 3 The drain 48 of the switch tube 44 is connected to the second end, and the source of the switch tube 44 is grounded.
[0067] Optionally, the gate 47 of the switching tube 44 is connected to the control circuit in the transformer 100. When the voltage difference between the voltage output by the control circuit to the gate 47 and the source 46 is greater than the turn-on voltage of the switching tube 44, the switching tube 44 is turned on, the entire switching element 41 is turned on, and the power supply 60 charges the excitation inductance 42 and the primary leakage inductance 43 in the primary circuit 40.
[0068] In some embodiments, please refer to Figure 1 、 Figure 2 and Figure 3 The transformer 100 further includes a power supply 60 , a magnetic core 11 and a secondary resistor 55 .
[0069] The power supply 60 is an AC power supply. When the switch 41 is turned on, the AC power supply provides AC power to the primary coil (ie, the excitation inductor 42 and the primary leakage inductor 43 ), and the primary coil generates an alternating magnetic field.
[0070] Among them, the magnetic core 11 is located between the primary coil and the secondary coil 54. The alternating magnetic field generated by the primary coil passes through the magnetic core 11, which will generate an induced electromotive force in the secondary coil 54, and then generate current in the secondary circuit 50, realizing the transfer of electrical energy from the primary circuit 40 to the secondary circuit 50.
[0071] The secondary resistor 55 is the resistance of the secondary coil 54 in the secondary circuit 50. The secondary winding is usually wound with a metal wire (such as copper, aluminum, etc.), and since the metal itself has a certain resistivity, the winding inevitably has resistance.
[0072] Optionally, the power supply 60 can be an AC power supply with a waveform such as a sine wave, square wave, or triangular wave, or a combination of a DC power supply connected to an inverter circuit, and the magnetic core 11 can be a silicon steel sheet core 11, a ferrite core 11, an amorphous alloy core 11, etc., which is not limited in this embodiment of the present application.
[0073] The present application also provides an electronic device, which includes the transformer 100 of any of the above embodiments. Figure 4 , Figure 4is a schematic structural diagram of an electronic device provided in an embodiment of the present application. The electronic device 200 includes a transformer. When the transformer 100 is operating, the first buffer circuit 20 and the second buffer circuit 30 can reduce voltage spikes in the transformer circuit 10, thereby increasing the service life of the transformer 100 and further improving the reliability of the electronic device 200. Alternatively, the electronic device 200 may be an onboard charger, a DC-DC converter, an electric drive system, or the like, which is not limited in the present embodiment.
[0074] The embodiment of the present application further provides a vehicle, which includes the above-mentioned electronic device 200. Figure 5 , Figure 5 This is a structural diagram of a vehicle provided in an embodiment of the present application. The vehicle 300 includes an electronic device 200. When the electronic device 200 is working, the transformer 100 in the electronic device 200 can reduce the voltage spike inside the transformer 100. The specific situation of the transformer 100 reducing the voltage spike has been described in detail in the various embodiments of the above-mentioned transformer 100. To avoid repetition, it will not be repeated here.
[0075] Based on the introduction of the above transformer, an embodiment of the present application provides a device parameter design method for designing the device parameters of the first snubber circuit of the above transformer. The device parameter design method is described in detail below:
[0076] See also Figure 6 A device parameter design method provided in an embodiment of the present application is implemented by steps 011 and 012, which are described in detail below.
[0077] Step 011: Determine the clamping voltage and absorbed energy based on the device parameters of the transformer circuit and the capacitance of the second capacitor;
[0078] Step 012: Based on the clamping voltage and the absorbed energy, design the device parameters of the first buffer circuit.
[0079] The device parameters of the transformer circuit refer to the inherent property parameters and operating parameters of the transformer circuit, such as the inductance of the primary leakage inductor and the voltage across the primary leakage inductor.
[0080] The clamping voltage refers to the minimum voltage across the first capacitor in the first buffer circuit.
[0081] The absorbed energy refers to the energy in the transformer circuit absorbed by the first snubber circuit.
[0082] Specifically, the capacitance of the second capacitor is in the same order of magnitude as the capacitance of the switching capacitor or in the same order of magnitude as the capacitance of the distributed capacitance between the primary winding and the secondary winding of the transformer, and the capacitance of the second capacitor is determined by a calibration method. The clamping voltage and absorbed energy are calculated based on the device parameters of the transformer circuit and the capacitance of the second capacitor, taking into account the influence of the primary circuit and the secondary circuit of the transformer on the switching device. In this way, the device parameters of the first buffer circuit calculated based on the clamping voltage and the absorbed energy enable the first buffer circuit to effectively reduce the voltage spike in the transformer circuit, extend the service life of the transformer, and improve the reliability of the transformer.
[0083] In some embodiments, see Figure 7 , step 011 includes:
[0084] Step 0111: Determine a clamping voltage based on the turns ratio, the output voltage, and the forward voltage of the second diode;
[0085] Step 0112: Determine the absorbed energy based on the clamping voltage, the inductance of the primary leakage inductor, the voltage across the primary leakage inductor, the primary current peak, the inductance of the secondary leakage inductor, the resistance of the secondary resistor in the secondary circuit, the capacitance of the second capacitor, and the operating frequency.
[0086] The turns ratio refers to the ratio of the number of turns of the primary winding of the transformer to the number of turns of the secondary winding.
[0087] The output voltage refers to the voltage of the secondary circuit of the transformer at both ends of the load, which can be collected in real time.
[0088] The operating frequency refers to the frequency of the AC power supply connected to the transformer.
[0089] Specifically, the clamping voltage satisfies the relationship expressed in equation (1):
[0090] V C =n(V0+V on )(1)
[0091] Among them, V C represents the clamping voltage, n represents the turns ratio, V0 represents the output voltage, e on represents the forward voltage of the second diode (determined based on the type of the second diode).
[0092] The absorbed energy satisfies the relationship expressed by equations (2)(3)(4):
[0093] W R =W f +W L1k +W CP -W RS (2)
[0094]
[0095] W RS =i p 2 R S / f(4)
[0096] Among them, W R Indicates absorbed energy, W f Represents feedback energy, W L1k Represents leakage inductance energy storage, W CP Represents the energy stored in the second capacitor, W RS Indicates the energy consumed by the transformer winding, V f Indicates the feedback voltage (V f In terms of value, V C equal), i p Indicates the peak current of the primary circuit, L k Represents the sum of the primary side leakage inductance and the secondary side leakage inductance, V L1k Represents the sum of the voltage across the primary leakage inductance and the voltage across the secondary leakage inductance, C1 represents the capacitance of a second capacitor, C2 represents the capacitance of another second capacitor, V C Represents the clamping voltage, R S It represents the equivalent resistance of the transformer winding, and f represents the operating frequency.
[0097] Optionally, when there is only one second capacitor, only one of C1 and C2 is retained for calculation. The capacitance of the second capacitor is determined based on the position and connection relationship of the only second capacitor. When the second capacitor is connected in parallel with the first buffer circuit, the capacitance of the second capacitor is of the same order of magnitude as the capacitance of the switched capacitor; when one end of the second capacitor is connected to the first end and the other end is connected to the secondary leakage inductance, the capacitance of the second capacitor is of the same order of magnitude as the capacitance of the distributed capacitance between the primary winding and the secondary winding of the transformer.
[0098] In some embodiments, see Figure 8 , step 012 includes:
[0099] Step 0121: Determine the resistance value of the resistor based on the clamping voltage, the operating frequency, and the absorbed energy;
[0100] Step 0122: Determine the capacitance of the first capacitor based on the resistance of the resistor, the operating frequency, and the ripple of the clamping voltage.
[0101] The ripple of the clamping voltage refers to a small fluctuation of the clamping voltage. Generally, the ripple of the clamping voltage is 5% of the standard value of the clamping voltage.
[0102] Specifically, based on the obtained clamping voltage, absorbed energy, and relevant device parameters of the transformer circuit, the resistance value of the resistor and the capacitance value of the first capacitor in the first snubber circuit can be further calculated. Thus, the first snubber circuit corresponding to the determined resistance value of the resistor and capacitance value of the first capacitor can effectively reduce voltage spikes in the transformer circuit and improve transformer reliability.
[0103] In some embodiments, see Figure 9 , step 0121 includes:
[0104] Step 01211: Determine the resistance value of the resistor based on a result obtained by multiplying the inverse of the product of the operating frequency and the absorbed energy by the square of the clamping voltage.
[0105] Specifically, the resistance value of the resistor satisfies the relationship expressed in formula (5):
[0106]
[0107] Where R represents the resistance value, V C represents the clamping voltage, f represents the operating frequency, W R Indicates absorbed energy, W f Represents feedback energy, W L1k Represents leakage inductance energy storage, W CP Represents the energy stored in the second capacitor, W RS Indicates the energy consumed by the transformer winding.
[0108] In this way, by multiplying the inverse of the product of the operating frequency and the absorbed energy by the square of the clamping voltage as the resistance value, the absorption efficiency of the first buffer circuit can be improved while keeping the voltage across the first capacitor not less than the clamping voltage.
[0109] In some embodiments, see Figure 10 , step 0122 includes:
[0110] Step 01221: Determine the capacitance of the first capacitor based on the inverse of the product of the resistance value of the resistor, the operating frequency, and the ripple of the clamping voltage.
[0111] Specifically, the capacitance of the first capacitor satisfies the relationship expressed in formula (6):
[0112] C=1 / λRf (6)
[0113] Wherein, C represents the capacitance of the first capacitor, λ represents the ripple of the clamping voltage. Generally, λ is 5% of the standard value of the clamping voltage; R represents the resistance of the resistor, and f represents the operating frequency.
[0114] In this way, the absorption efficiency of the first buffer circuit can be improved by taking the inverse of the product of the resistance value of the resistor, the operating frequency and the ripple of the clamping voltage as the capacitance of the first capacitor.
[0115] According to the device parameter design method described in the above embodiment, the present application embodiment also provides a device parameter design device 400 for executing the steps in the above device parameter design method. Figure 11 , Figure 11 : is a schematic diagram of a module of a device parameter design apparatus 400 provided in an embodiment of the present application. The device parameter design apparatus 400 includes:
[0116] A determination module 401 is configured to determine a clamping voltage and an absorbed energy based on device parameters of the transformer circuit and a capacitance value of a second capacitor;
[0117] The design module 402 is configured to design device parameters of the first buffer circuit based on the clamping voltage and the absorbed energy.
[0118] It should be noted that the specific details of each module unit in the above-mentioned device parameter design apparatus have been described in detail in the embodiment of the above-mentioned device parameter design method, and will not be repeated here.
[0119] In the embodiments of the present application, the term "module" or "unit" refers to a computer program or a part of a computer program that has a predetermined function and works together with other related parts to achieve a predetermined goal, and can be implemented in whole or in part by using software, hardware (such as processing circuits or memories) or a combination thereof. Similarly, a processor (or multiple processors or memories) can be used to implement one or more modules or units. In addition, each module or unit can be part of an overall module or unit that includes the function of the module or unit.
[0120] In some embodiments, the device parameter design device in the embodiments of the present application can be implemented in hardware, such as an electronic device or a component in an electronic device, such as an integrated circuit or a chip; the device parameter design device can also be implemented in software, such as as an application installed in an electronic device.
[0121] In some embodiments, see Figure 12 , Figure 12 is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. Electronic device 500 includes a processor 501 and a memory 502. Memory 502 stores a computer program 503 executable on processor 501. When executed by processor 501, program 503 implements the various processes of the embodiment of the device parameter design method described above, achieving the same technical effects. To avoid repetition, these are not described here.
[0122] An embodiment of the present application also provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the various processes of the embodiment of the above-mentioned device parameter design method are implemented, and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.
[0123] The processor may be the processor in the electronic device in the above embodiment. The computer readable storage medium may be a computer read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.
[0124] Computer-readable media may include computer storage media and communication media. Computer storage media include volatile and non-volatile, removable and non-removable media implemented by any method or technology for storing information such as computer-readable instructions, data structures, program modules or other data. Computer storage media include RAM, ROM, Erasable Programmable Read-Only Memory (EPROM), Electrically Erasable Programmable Read-Only Memory (EEPROM), flash memory or other solid-state memory technology, CD-ROM, Digital Versatile Disc (DVD) or other optical storage, tape cassettes, magnetic tape, disk storage or other magnetic storage devices. Of course, those skilled in the art will appreciate that computer storage media are not limited to the above.
[0125] The present application also provides a computer program product, including a computer program, which, when executed by a processor, implements the aforementioned device parameter design method. The processor may be a processor in the electronic device described in the aforementioned embodiment. When executed by the processor, the computer program implements each of the aforementioned device parameter design method embodiments, achieving the same technical effects. To avoid repetition, these steps are not described here.
[0126] It is understandable that in the specific implementation of this application, data related to user identity or characteristics is involved. When the above embodiments of this application are applied to specific products or technologies, user permission or consent is required, and the collection, use and processing of relevant data must comply with relevant laws, regulations and standards of relevant countries and regions.
[0127] In the description of this specification, the reference terms "certain embodiments", "in an example", "exemplarily", etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are mutually inconsistent.
[0128] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code comprising one or more executable instructions for implementing the steps of a specific logical function or process, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present application belong.
[0129] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and intent of the present application, and that the scope of the present application is defined by the claims and their equivalents.
Claims
1. A transformer, characterized in that: include: Transformer circuit; a first buffer circuit, the first buffer circuit comprising a first capacitor, a resistor, and a first diode; The second buffer circuit includes at least one second capacitor, one end of the second capacitor is connected to the first buffer circuit, and the other end is connected to the transformer circuit.
2. The transformer according to claim 1, characterized in that The first capacitor and the resistor are connected in parallel, and the first capacitor and the resistor are both connected in series with the first diode.
3. The transformer according to claim 2, characterized in that The transformer circuit includes a primary circuit and a secondary circuit, the primary circuit includes a switch element, an excitation inductor and a primary leakage inductor; the first end of the first capacitor and the resistor in the first buffer circuit is connected to the primary leakage inductor, and the second end of the first diode is connected to the line between the switch element and the excitation inductor.
4. The transformer according to claim 3, characterized in that An anode of the first diode is connected to a line between the switch element and the excitation inductor, and a cathode of the first diode is connected to the first capacitor and the resistor.
5. The transformer according to claim 3, characterized in that One end of the second capacitor is connected to the first end, and the other end is connected to the secondary circuit.
6. The transformer according to claim 1, characterized in that The second capacitor is connected in parallel with the first buffer circuit.
7. The transformer according to claim 3, characterized in that The at least one second capacitor includes two second capacitors, one of which is connected in parallel to the first buffer circuit; and the other second capacitor has one end connected to the first end and the other end connected to the secondary circuit.
8. The transformer according to claim 5 or 7, characterized in that: One end of the second capacitor connected to the secondary circuit is connected to the secondary leakage inductance of the secondary circuit.
9. The transformer according to claim 5 or 7, characterized in that: The secondary circuit includes a second diode and a secondary capacitor. The anode of the second diode is connected to the second capacitor connected to the secondary circuit, and the cathode of the second diode is connected to the secondary capacitor.
10. The transformer according to claim 3, characterized in that The switch element includes a switch tube and a switch capacitor. The switch element includes a source, a gate and a drain. The switch capacitor is connected to the source and the drain.
11. The transformer according to claim 10, characterized in that The drain of the switch tube is connected to the second end, and the source of the switch tube is grounded.
12. An electronic device, characterized in that: A transformer comprising the transformer according to any one of claims 1 to 11.
13. A vehicle, characterized in that: The electronic device according to claim 12.
14. A method for designing device parameters, characterized in that: A method for designing device parameters of a first snubber circuit of a transformer according to any one of claims 1 to 11, wherein the method comprises: determining a clamping voltage and an absorbed energy based on device parameters of the transformer circuit and a capacitance value of the second capacitor; Device parameters of the first buffer circuit are designed based on the clamping voltage and the absorbed energy.
15. The device parameter design method according to claim 14, characterized in that: The determining of the clamping voltage and the absorbed energy based on the device parameters of the transformer circuit and the capacitance of the second capacitor includes: determining a clamping voltage based on the turns ratio, the output voltage, and the forward voltage of the second diode; The absorbed energy is determined based on the clamping voltage, the inductance of the primary leakage inductance, the voltage across the primary leakage inductance, the primary current peak, the inductance of the secondary leakage inductance, the resistance of the secondary resistor of the secondary circuit, the capacitance of the second capacitor and the operating frequency.
16. The device parameter design method according to claim 14, characterized in that: The designing of device parameters of the first buffer circuit based on the clamping voltage and the absorbed energy includes: determining a resistance value of the resistor based on the clamping voltage, the operating frequency, and the absorbed energy; The capacitance of the first capacitor is determined based on the resistance of the resistor, the operating frequency, and the ripple of the clamping voltage.
17. The device parameter design method according to claim 16, characterized in that: The determining the resistance value of the resistor based on the clamping voltage, the operating frequency, and the absorbed energy includes: The resistance value of the resistor is determined based on a result of multiplying the inverse of the product of the operating frequency and the absorbed energy by the square of the clamping voltage.
18. The device parameter design method according to claim 16, characterized in that: Determining the capacitance of the first capacitor based on the resistance of the resistor, the operating frequency, and the ripple of the clamping voltage includes: The capacitance of the first capacitor is determined based on a result of calculating the inverse of a product of the resistance of the resistor, the operating frequency, and the ripple of the clamping voltage.
19. An electronic device, characterized in that: The device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the device parameter design method according to any one of claims 14 to 18 is implemented.
20. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the device parameter design method according to any one of claims 14 to 18 is implemented.
21. A computer program product, characterized in that The invention comprises a computer program, which implements the device parameter design method according to any one of claims 14 to 18 when the computer program is executed by a processor.