HEMT oscillator structure capable of removing TSV influence and construction method thereof

Abstract

The invention provides an HEMT oscillator structure capable of removing TSV influence and a construction method thereof. The HEMT oscillator structure capable of removing the TSV influence comprises an HEMT, the source electrode of which is connected with a TSV structure; the first transmission line is electrically connected with the source electrode of the HEMT; the second transmission line is electrically connected with the grid electrode of the HEMT and the resistor through the first capacitor; the first output section matching circuit is connected between the drain electrode of the HEMT and the third capacitor; the second output section matching circuit is connected between the drain electrode of the HEMT and the second capacitor; and the resistor and the first output section matching circuit are respectively connected with a grid voltage and a drain voltage and are used for providing a direct current bias voltage for the HEMT. According to the method, the accurate source of the source parasitic parameters of the HEMT is defined, equivalent circuit model extraction and full-wave simulation are combined, the parasitic parameters introduced by each structure in the process from the source electrode to the grounding via hole in the VCO are accurately described and extracted, and the simulation precision in the subsequent design process is improved.

Description

Technical Field

[0001] The present application relates to an oscillator structure, and in particular to a HEMT (High Electron Mobility Transistor) voltage-controlled oscillator (VCO) structure and a construction method thereof that eliminates the influence of TSV (Through Substrate Via). Background Art

[0002] In the application of High Electron Mobility Transistor (HEMT) in millimeter-wave radar, imaging, and detection, high integration and miniaturization of core circuits have become one of the important requirements. This has promoted the development of domestic technologies such as monolithic microwave integrated circuits (MMIC) and corresponding process design kits (PDK) in the W-band (75-110GHz) and higher operating frequency bands.

[0003] In HEMT technology, a compound semiconductor material system represented by gallium nitride (GaN), the source electrode plate of the HEMT in commercial PDKs provided by foundries is often directly connected to the metallization pattern on the back of the wafer through TSVs to achieve the connection between the HEMT source and ground. This is called source ground via technology.

[0004] While this technology provides a certain degree of robustness for HEMT devices and their MMIC circuits produced using the standard PDK process, the mandatory grounding of the source also limits the topology choices during HEMT circuit design. For example, only common-source topologies are feasible, while topologies with distinct advantages, such as common-source, common-drain, and cascode, are unavailable. Even in common HEMT circuits such as low-noise amplifiers (LNAs) and power amplifiers (PAs), even when using a common-source topology, additional components are often required between the HEMT source and ground to optimize and control device and overall circuit performance. The standard source TSV process also restricts the use of these additional circuit elements. In addition to limiting design freedom, the TSV itself introduces additional parasitic resistance and inductance between the HEMT source and ground. These parasitic parameters can degrade system performance and cause center frequency shift in high-frequency applications above the W-band. In summary, although TSV technology maintains excellent device stability, in more in-depth circuit design and cases with more complex performance requirements, this technology forces the HEMT to change from a three-port device to a two-port device, limiting the further development of HEMT performance and the in-depth development of MMIC technology.

[0005] In the field of MMIC technology, HEMT-based voltage-controlled oscillators (VCOs) require the introduction of inductors or capacitors at the HEMT's source to control the gate's oscillation conditions and frequency. This creates a critical need for the HEMT's three-port characteristics. Therefore, a method for extracting the parasitic inductance and resistance introduced by source TSVs within a standard PDK process and removing them from the HEMT model, thus restoring the HEMT's complete three-port characteristics and accurate data, is crucial for the design of MMICs like VCOs that require additional topological structures at the source.

[0006] In the existing technology, the above problem is mainly solved by secondary extraction and construction of the equivalent circuit model of the HEMT device in the PDK. S It is mainly introduced by the source grounding via, so in the secondary model, L S Remove it, and keep other source devices in the equivalent circuit unchanged, thereby removing the influence of the source grounding via.

[0007] However, this solution has its drawbacks. Specifically, the HEMT source electrode and the source ground via are in series in the equivalent circuit model. The L extracted from the native PDK model is S The parameter includes the parasitic inductance L introduced by the source metal electrode itself.S0 , and the parasitic inductance L introduced by the source grounding via VH and parasitic resistance R VH Simply change L S0 、L VH and R VH It all comes down to L S And all of them are removed. First, the influence of the source HEMT source metal electrode parasitic inductance is ignored, which will cause excessive de-embedding. Second, the parasitic resistance R is ignored. VH The influence of the secondary construction model reduces the accuracy of the secondary construction model. Summary of the Invention

[0008] The main purpose of this application is to propose a HEMT oscillator structure and construction method that eliminates the effects of TSVs. By clarifying the exact sources of HEMT source parasitic parameters and combining equivalent circuit model extraction with full-wave simulation, the parasitic parameters introduced by various structures in the VCO from the source electrode to the ground via are accurately described and extracted. Parameters related to the source ground via are targetedly removed, while parameters introduced by the source electrode itself are fully retained. This ensures the accuracy of the secondary model construction and improves the simulation accuracy in the subsequent design process, thereby overcoming the shortcomings of the existing technology.

[0009] To achieve the above-mentioned invention objectives, the technical solutions adopted in this application include:

[0010] A first aspect of the present application provides a HEMT oscillator structure that eliminates TSV effects, comprising:

[0011] HEMT, whose source is connected to the TSV structure;

[0012] a first transmission line electrically connected to the source of the HEMT;

[0013] a second transmission line electrically connected to the gate of the HEMT and the resistor via the first capacitor;

[0014] a first output section matching circuit connected between the drain of the HEMT and the third capacitor;

[0015] a second output section matching circuit connected between the drain of the HEMT and the second capacitor;

[0016] The resistor and the first output section matching circuit are further connected to the gate voltage and the drain voltage respectively, so as to provide a DC bias voltage for the HEMT.

[0017] Furthermore, the first transmission line and the second transmission line are used to adjust the impedance Z looking toward the HEMT gate. in and the impedance Z looking toward the second transmission line res , so that Z inWith Z res Satisfies the following relationship:

[0018] Z res =R res +jX res

[0019] Z in =R in +jX in

[0020] R res +R in <0

[0021] X res +X in =0

[0022] Thus, the oscillation condition is achieved, where R res and R in represents the real part of the impedance, X res and X in Represents the imaginary part of impedance.

[0023] Furthermore, the first transmission line, the second transmission line, and the third capacitor are grounded respectively.

[0024] Furthermore, the second capacitor is connected between the second output section matching circuit and the output end of the HEMT oscillator structure.

[0025] A second aspect of the present application provides a method for constructing a HEMT oscillator structure that eliminates TSV effects, comprising:

[0026] S1. Extract the model parameters of the standard process HEMT in the PDK and build a HEMT small signal model;

[0027] S2. Model the TSV structure in full-wave simulation and extract the parasitic parameters of the TSV structure;

[0028] S3, de-embedding the HEMT small signal model to eliminate the influence of TSV on HEMT and obtain a three-port HEMT model;

[0029] S4. Constructing a HEMT oscillator structure based on the three-port HEMT model.

[0030] Furthermore, step S1 specifically includes:

[0031] Extract the external parameters of the HEMT, including:

[0032] In the cold field-cutoff working state of HEMT, the RF parameters of HEMT are measured, and the external parasitic capacitance C is extracted through the low-frequency imaginary part of the Y parameter. pg 、Cpd 、C pgd , and extract the external parasitic inductance L through the high-frequency imaginary part of the Z parameter g 、L d 、L s , where low frequency is the frequency below 1GHz and high frequency is the frequency above 25GHz;

[0033] In the cold field working state of HEMT, the gate-source voltage Vgs value is scanned, and the RF parameters of HEMT are measured at different gate voltages. The external parasitic resistance R is extracted by the real part of the Z parameter. g 、R d 、R s ;

[0034] Extracting the internal parameters of the HEMT, including measuring the full-band RF parameters for different HEMT DC operating points, de-embedding the external parameters, and then calculating the values of the internal parameters;

[0035] A HEMT small signal model is obtained by calculation based on the extracted external parameters and internal parameters.

[0036] Furthermore, in the cold-off state of HEMT, the source-drain voltage V ds =0V, gate-source voltage V gs <Threshold voltage V th .

[0037] Furthermore, the TSV structure is connected to the gate of the HEMT, and the parasitic inductance L in the HEMT small signal model is S , parasitic resistance R S are the parasitic inductance and parasitic resistance at the source position respectively.

[0038] Furthermore, step S2 specifically includes:

[0039] Perform a separate full-wave simulation on the TSV structure and obtain the Z parameter and parasitic inductance L from the full-wave simulation results. VH and parasitic resistance R VH The relationship is expressed as:

[0040] Z VH =R VH (ω)+jωL VH

[0041]

[0042] Among them, Z VH is the total parasitic input impedance introduced by the TSV structure, R VH (ω) is the parasitic resistance related to the angular frequency, j is the imaginary unit, Re(Z VH ) is ZVH The real part, ω is the angular frequency, L VH is the parasitic inductance, is the DC component of the parasitic resistance, The parasitic resistance reflects the RF component of the skin effect, mean represents the average value of the entire frequency band, Im(Z VH ) is Z VH The imaginary part of

[0043] Perform linear regression calculation on the relationship between the real part of the Z parameter and the angular frequency, and extract the DC component of the parasitic resistance of the TSV structure from the intercept and slope respectively. and RF components reflecting the skin effect The sum of the two is the parasitic resistance introduced by the TSV structure;

[0044] The parasitic inductance introduced by the TSV structure is extracted from the average value of the inductance in the entire frequency band.

[0045] Furthermore, step S3 specifically includes: obtaining the parasitic inductance L from the HEMT small signal model S , parasitic resistance R S Subtract the parasitic inductance L introduced by the TSV structure from VH , parasitic resistance R VH , thereby obtaining the three-port HEMT model.

[0046] Compared with the prior art, this application has at least the following beneficial effects:

[0047] In terms of parasitic inductance, the embodiment of the present application provides a HEMT oscillator structure and construction method for removing the influence of TSV. Through complete full-wave simulation, it accurately distinguishes the parasitic inductance introduced by the source metal electrode and the ground via respectively. Compared with the existing technical solution of removing the L S The entire removal improves the accuracy of the inductor value and avoids the distortion in RF performance after completely deleting the inductor component.

[0048] In terms of parasitic resistance, the embodiments of the present application provide a HEMT oscillator structure and construction method that eliminates the influence of TSVs. By introducing a skin-effect resistance formula applicable to ground vias, this avoids the model error caused by ignoring additional parasitic resistance in existing technical solutions. In terms of the overall system, the more accurate model helps reduce the error between simulation and actual measurement in subsequent designs. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0050] Figure 1 This is a flowchart of a method for constructing a HEMT oscillator structure that eliminates TSV effects, provided in a typical implementation case of the present application;

[0051] Figure 2a This is a three-dimensional circuit diagram based on the physical structure of the HEMT in the HEMT 16-element small-signal equivalent circuit model;

[0052] Figure 2b This is a planar circuit diagram based on the physical structure of the HEMT in the HEMT 16-element small-signal equivalent circuit model;

[0053] Figure 3a 1 is a schematic diagram of the structure of a HEMT in the vertical direction in a typical implementation case of the present application;

[0054] Figure 3b This is a schematic diagram of an equivalent circuit of a source metal electrode and a ground via in a typical implementation case of the present application;

[0055] Figure 4a This is a top view of a model for full-wave simulation of a source ground via in a typical implementation case of the present application;

[0056] Figure 4b It is the equivalent circuit model of the full-wave simulation of the source ground via in a typical implementation case of this application;

[0057] Figure 5 This is a VCO circuit diagram in a typical implementation case of this application. DETAILED DESCRIPTION

[0058] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present application. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present application. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessarily confusing the concepts of the present application.

[0059] The terms used herein are only for describing specific embodiments and are not intended to limit this application. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0060] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0061] When expressions such as "at least one of A, B and C, etc." are used, they should generally be interpreted in accordance with the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0062] In a more specific embodiment, see Figure 5 , a HEMT oscillator structure for removing TSV influence, comprising:

[0063] HEMT, whose source is connected to the TSV structure;

[0064] TL s a transmission line (i.e., the aforementioned first transmission line, the same below), electrically connected to the source of the HEMT;

[0065] TL res a transmission line (i.e., the aforementioned second transmission line, the same below), electrically connected to the gate of the HEMT and the resistor R1 via the first capacitor C1;

[0066] an output section matching circuit TL1 (i.e., the aforementioned first output section matching circuit, the same below), connected between the drain of the HEMT and the third capacitor C3;

[0067] an output-stage matching circuit TL2 (i.e., the aforementioned second output-stage matching circuit, the same below), connected between the drain of the HEMT and the second capacitor C2;

[0068] Among them, TL s Transmission Line, TL res The transmission line and the third capacitor C3 are grounded respectively. The second capacitor C2 is connected between the output section matching circuit TL2 and the output terminal (Output) of the HEMT oscillator structure. The resistor R1 and the output section matching circuit TL1 are also connected to the gate voltage V g , drain voltage V d, used to provide DC bias voltage for HEMT.

[0069] Specifically, TL s Transmission Lines and TLs res The transmission line is used to adjust the impedance Z looking toward the HEMT gate. in and look towards TL res The impedance of the transmission line Z res , so that Z in With Z res Satisfies the following relationship:

[0070] Z res =R res +jX res

[0071] Z in =R in +jX in

[0072] R res +R in <0

[0073] X res +X in =0

[0074] Thus, the oscillation condition is achieved, where R res and R in represents the real part of the impedance, X res and X in Represents the imaginary part of impedance.

[0075] In a more specific embodiment, a method for constructing a HEMT oscillator structure without the influence of TSV (ie, ground via, the same below) is provided. Figure 1 As shown, the specific steps include:

[0076] S1. Extract the model parameters of the standard process HEMT in the PDK and build a HEMT small signal model.

[0077] Specifically, the method for extracting the external parameters (i.e., external parasitic parameters) of the HEMT includes:

[0078] In the HEMT cold field-cutoff (source-drain voltage V ds =0V, gate-source voltage V gs <Threshold voltage V th ) working state, measure the RF parameters of HEMT, and extract the external parasitic capacitance C through the low-frequency imaginary part of the Y parameter pg 、C pd 、C pgd , and extract the external parasitic inductance L through the high-frequency imaginary part of the Z parameter g 、Ld 、L s , where low frequency is lower than 1GHz and high frequency is higher than 25GHz; in the cold field working state of HEMT, the gate-source voltage V gs The value of is obtained, and the RF parameters of HEMT are measured at different gate voltages. The external parasitic resistance R is extracted by the real part of the Z parameter. g 、R d 、R s , so far, the extraction of external parameters is completed.

[0079] Specifically, the method for extracting the internal parameters (i.e., internal intrinsic parameters) of the HEMT includes:

[0080] For different HEMT DC operating points, the RF parameters across the entire frequency band are measured, the external parameters are de-embedded, and the internal parameters are then calculated.

[0081] Specifically, after all the external and internal parameters are extracted and calculated, a complete secondary extracted HEMT small signal equivalent circuit model can be obtained. It should be noted that the TSV structure is connected to the gate of the HEMT, and the parasitic inductance L in the HEMT small signal model is S , parasitic resistance R S are the parasitic inductance and parasitic resistance at the source position respectively.

[0082] The HEMT small signal model calculated from the external and internal parameters is based on an open-source 16-element HEMT small signal equivalent circuit model extraction and modeling method, which is a known technique in the art and is briefly described below. Specifically, the 16-element HEMT small signal equivalent circuit model is as follows: Figure 2a 、 Figure 2b As shown, Figure 2a It is a three-dimensional circuit diagram based on the HEMT structure, which is used to describe the position of the equivalent circuit elements corresponding to the physical structure of each part. Figure 2b is the circuit diagram of the equivalent circuit expanded to a plane. Figure 2a It can be seen that the RLC circuit elements related to the metal electrodes in the upper part are external parasitic parameters, among which the parasitic components introduced by the TSV structure mentioned in this application are also included in the R in the S branch. S and L S The lower part mainly describes the internal intrinsic parameters related to the two-dimensional electron gas in the active region of the HEMT channel.

[0083] S2. Model the TSV structure in full-wave simulation and extract the parasitic parameters of the TSV structure.

[0084] Specifically, the source part of the HEMT small signal model of S1 is analyzed in detail. The external parasitic parameters at the source position include two parts: the source metal electrode and the source TSV structure. Both parts introduce their own parasitic inductance and parasitic resistance. The parasitic inductance introduced by the metal electrode is L S0 , the parasitic resistance is R S0 , the parasitic inductance introduced by the TSV structure is L VH , the parasitic resistance is R VH ,like Figure 3a 、 Figure 3b As shown, these two parts are not distinguished in the PDK model and are both included in the overall parasitic inductance L of the source. S , parasitic resistance R S In Chinese, that is:

[0085] L S =L s0 +L VH

[0086] R S =R s0 +R VH

[0087] In order to further separate the parasitic parameters introduced by the TSV structure, a separate full-wave simulation is performed on the TSV structure, such as Figure 4a 、 Figure 4b As shown, at this time, there are only parasitic parameters introduced by the TSV structure between port 1 and the ground reference ground, and the Z parameter in the full-wave simulation results is different from the L VH and R VH The relationship is:

[0088] Z VH =R VH (ω)+jωL VH

[0089] The expression of parasitic resistance introduces the influence of skin effect:

[0090]

[0091] Among them, Z VH is the total parasitic input impedance introduced by the TSV structure, R VH (ω) is the parasitic resistance related to the angular frequency, j is the imaginary unit, Re(Z VH ) is Z VH The real part, ω is the angular frequency, L VH is the parasitic inductance, is the DC component of the parasitic resistance, The parasitic resistance reflects the RF component of the skin effect, mean represents the average value of the entire frequency band, Im(Z VH ) is ZVH The imaginary part of

[0092] By performing linear regression calculation on the relationship between the real part of the Z parameter and the angular frequency, the DC resistance frequency-controlled skin effect resistance of the TSV structure, i.e., the DC component of the parasitic resistance, is extracted from the intercept and slope. and RF components reflecting the skin effect The sum of the parasitic resistance introduced by the TSV structure is obtained by the average value of the inductance in the full frequency band.

[0093] S3. De-embedding the HEMT small signal model to eliminate the influence of the TSV on the HEMT, and obtaining a three-port HEMT model.

[0094] Specifically, after extracting the parasitic parameters introduced by the TSV structure through full-wave simulation, the parasitic inductance L of the small signal equivalent circuit (small signal model) extracted from the PDK is S , parasitic resistance R S Subtract the parasitic inductance L introduced by the TSV structure from VH , parasitic resistance R VH , the initial three-port HEMT small-signal model without the TSV structure is obtained. At this time, the HEMT model can perform normal topology design at the source, eliminating the limitations and influence of the TSV structure on the HEMT performance.

[0095] S4. Construct a HEMT oscillator structure based on the three-port HEMT model.

[0096] Specifically, the VCO core components are HEMT M1, a transmission line TL for controlling the oscillation conditions, res , transmission line TL s , output section matching circuit TL1, output section matching circuit TL2, in addition, C1, C2 and C3 are DC blocking capacitors, R1 and V g and V d Provide DC bias voltage for M1. The specific circuit diagram is as follows Figure 5 shown.

[0097] Specifically, the HEMT DC operating point is selected as the maximum transconductance point, and the transmission line TL is used. res and transmission line TL s In high-frequency inductance characteristics, the impedance Z facing the HEMT gate is adjusted. in and look towards TL res Impedance Z res The oscillation conditions can be achieved if the following relationship is met.

[0098] Z res =R res +jX res

[0099] Z in =R in +jX in

[0100] R res +R in <0

[0101] X res +X in =0

[0102] where R res and R in represents the real part of the impedance, X res and X in Represents the imaginary part of impedance.

[0103] Removing HEMT source ground vias is of great significance in improving the design freedom of MMIC circuits. The embodiments of the present application provide a HEMT oscillator structure and construction method that removes the influence of TSVs. By combining small-signal model extraction with full-wave simulation of ground vias, parasitic parameters introduced by TSVs are accurately removed. When extracting the ground via parameters, parasitic resistance elements related to the skin effect are introduced, further improving the accuracy of secondary modeling, removing the influence of TSVs, and realizing VCO design.

[0104] In terms of parasitic inductance, the embodiment of the present application provides a HEMT oscillator structure and construction method for removing the influence of TSV. Through complete full-wave simulation, it accurately distinguishes the parasitic inductance introduced by the source metal electrode and the ground via respectively. Compared with the existing technical solution of removing the L S The entire removal improves the accuracy of the inductor value and avoids the distortion in RF performance after completely deleting the inductor component.

[0105] In terms of parasitic resistance, the embodiments of the present application provide a HEMT oscillator structure and construction method that eliminates the influence of TSVs. By introducing a skin-effect resistance formula applicable to ground vias, this avoids the model error caused by ignoring additional parasitic resistance in existing technical solutions. In terms of the overall system, the more accurate model helps reduce the error between simulation and actual measurement in subsequent designs.

[0106] The above embodiments are intended only to illustrate the technical concepts and effects of this application, with the goal of enabling those familiar with this technical field to understand the content of this application and implement it accordingly. However, these embodiments do not constitute a limitation on the scope of protection of this application. Any equivalent transformations or modifications made based on the spirit and technical ideas of this application should be covered by the claims of this application.

Claims

1. A HEMT oscillator structure that eliminates TSV effects, characterized in that: include: HEMT, whose source is connected to the TSV structure; a first transmission line electrically connected to the source of the HEMT; a second transmission line electrically connected to the gate of the HEMT and the resistor via the first capacitor; a first output section matching circuit connected between the drain of the HEMT and the third capacitor; a second output section matching circuit connected between the drain of the HEMT and the second capacitor; The resistor and the first output section matching circuit are further connected to the gate voltage and the drain voltage respectively, so as to provide a DC bias voltage for the HEMT.

2. The HEMT oscillator structure for removing TSV influence according to claim 1, characterized in that: The first transmission line and the second transmission line are used to adjust the impedance Z looking toward the HEMT gate. in and the impedance Z looking toward the second transmission line res , so that Z in With Z res Satisfies the following relationship: Z res =R res +iX res Z in =R in +iX in R res +R in <0 X res +X in =0 Thus, the oscillation condition is achieved, where R res and R in represents the real part of the impedance, X res and X in Represents the imaginary part of impedance.

3. The HEMT oscillator structure for removing TSV effects according to claim 1, wherein: The first transmission line, the second transmission line and the third capacitor are grounded respectively.

4. The HEMT oscillator structure for removing TSV effects according to claim 1, wherein: The second capacitor is connected between the second output section matching circuit and the output terminal of the HEMT oscillator structure.

5. The method for constructing a HEMT oscillator structure with TSV removal according to any one of claims 1 to 4, characterized in that: include: S1. Extract the model parameters of the standard process HEMT in the PDK and build a HEMT small signal model; S2. Model the TSV structure in full-wave simulation and extract the parasitic parameters of the TSV structure; S3. De-embed the HEMT small signal model to eliminate the effect of TSV on HEMT and obtain a three-port HEMT model: S4. Constructing a HEMT oscillator structure based on the three-port HEMT model.

6. The method for constructing a HEMT oscillator structure with TSV removal according to claim 5, characterized in that: Step S1 specifically includes: Extract the external parameters of the HEMT, including: In the cold field-cutoff working state of HEMT, the RF parameters of HEMT are measured, and the external parasitic capacitance C is extracted through the low-frequency imaginary part of the Y parameter. pg 、C pd 、C pgd , and extract the external parasitic inductance L through the high-frequency imaginary part of the Z parameter g 、L d 、L s , where low frequency is the frequency below 1GHz and high frequency is the frequency above 25GHz; In the cold field working state of HEMT, the gate-source voltage V gs The value of is obtained, and the RF parameters of HEMT are measured at different gate voltages. The external parasitic resistance R is extracted by the real part of the Z parameter. g 、R d 、R s ; Extracting the internal parameters of the HEMT, including measuring the full-band RF parameters for different HEMT DC operating points, de-embedding the external parameters, and then calculating the values of the internal parameters; A HEMT small signal model is obtained by calculation based on the extracted external parameters and internal parameters.

7. The method for constructing a HEMT oscillator structure with TSV removal according to claim 6, wherein: In the cold-off state of HEMT, the source-drain voltage V ds =0V, gate-source voltage V gs <Threshold voltage V th .

8. The method for constructing a HEMT oscillator structure with TSV removal according to claim 5, wherein: The TSV structure is connected to the gate of the HEMT. The parasitic inductance L in the HEMT small signal model is S , parasitic resistance R S are the parasitic inductance and parasitic resistance at the source position respectively.

9. The method for constructing a HEMT oscillator structure with TSV removal according to claim 8, wherein: Step S2 specifically includes: Perform a separate full-wave simulation on the TSV structure and obtain the Z parameter and parasitic inductance L from the full-wave simulation results. VH and parasitic resistance R VH The relationship is expressed as: Z VH =R VH (ω)+jωL VH Among them, Z VH is the total parasitic input impedance introduced by the TSV structure, R VH (ω) is the parasitic resistance related to the angular frequency, j is the imaginary unit, Re(Z VH ) is Z VH The real part, ω is the angular frequency, L VH is the parasitic inductance, is the DC component of the parasitic resistance. The parasitic resistance reflects the RF component of the skin effect, mean represents the average value of the entire frequency band, Im(Z VH ) is Z VH The imaginary part of Perform linear regression calculation on the relationship between the real part of the Z parameter and the angular frequency, and extract the DC component of the parasitic resistance of the TSV structure from the intercept and slope respectively. and RF components reflecting the skin effect The sum of the two is the parasitic resistance introduced by the TSV structure; The parasitic inductance introduced by the TSV structure is extracted from the average value of the inductance in the entire frequency band.

10. The method for constructing a HEMT oscillator structure with TSV removal according to claim 9, wherein: Step S3 specifically includes: obtaining the parasitic inductance L from the HEMT small signal model S , parasitic resistance R S Subtract the parasitic inductance L introduced by the TSV structure from VH , parasitic resistance R VH , thereby obtaining the three-port HEMT model.

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