Power amplifier with high standing wave resistance

Abstract

The invention provides a power amplifier with high standing wave resistance, and relates to the technical field of semiconductors, microelectronics and microwaves. The power amplifier comprises a power distribution end network, a power synthesis end network and 2n sub-amplifier units, wherein the power distribution end network, the corresponding sub-amplifier units and the power synthesis end network are connected in sequence; the power distribution end network is used for receiving a radio frequency signal of a target frequency band, dividing the radio frequency signal into 2n parts according to power, and respectively sending the divided radio frequency signal to the corresponding sub-amplifier units; each sub-amplifier unit is used for amplifying the received radio-frequency signal by a preset amplification factor and sending the amplified radio-frequency signal to the power synthesis end network; and the power synthesis end network is used for integrating all the amplified radio frequency signals to obtain a radio frequency signal with a target amplification factor. The size and the weight of the power amplifier can be reduced on the premise of high standing wave resistance.

Description

Technical Field

[0001] The present application relates to the fields of semiconductors, microelectronics and microwave technologies, and in particular to a power amplifier with high standing wave resistance. Background Art

[0002] With the development of wireless communication technology, power amplifiers (PAs), key components for amplifying radio frequency (RF) or microwave signals (signals), are finding themselves in increasingly complex environments. To reduce system complexity, save space, and lower costs, PAs need to be more adaptable to loads.

[0003] When operating an amplifier normally, the load impedance typically needs to be kept within a certain range to ensure proper performance and functionality. However, in actual use, the load impedance at the output port often deviates from the set range, resulting in a high standing wave (SWR) between the amplifier and the load. This can negatively impact the amplifier's performance, stability, and reliability, and can even cause permanent damage.

[0004] To address the high standing wave conditions that may occur at the amplifier's output port, a common solution is to cascade an isolator to the amplifier's output port, and then cascade a load to the isolator's output. The performance characteristics of an isolator are as follows: when the isolator's load is perfectly matched, the input standing wave can freely propagate to the load. However, when the load is mismatched and experiences a high standing wave condition, the reflected signal is absorbed by the isolator and not transmitted to the amplifier's output, thereby protecting the amplifier.

[0005] Due to inherent factors such as materials and structure, the size of the isolator is closely related to the operating frequency. The size is relatively small when working at high frequencies, and relatively large when working at low frequencies (P, L, S, C and other frequency bands). Summary of the Invention

[0006] The present application provides a power amplifier with high standing wave resistance, so as to solve the problem in the prior art that an isolator is cascaded at the output port of the power amplifier to improve the standing wave adaptability index, resulting in an oversized power amplifier.

[0007] In a first aspect, the present application provides a power amplifier with high standing wave resistance, the power amplifier comprising a power distribution end network, a power synthesis end network and 2 n sub-amplifier units, the power distribution end network, the corresponding sub-amplifier units and the power synthesis end network are connected in sequence, wherein n≥2, and n is a positive integer;

[0008] The power distribution end network is used to receive the radio frequency signal of the target frequency band and divide the radio frequency signal into two nand sending the divided RF signals to the corresponding sub-amplifier units respectively;

[0009] Each sub-amplifier unit is used to amplify the received radio frequency signal by a preset amplification factor and send the amplified radio frequency signal to the power synthesis end network;

[0010] The power combining end network is used to integrate all the amplified radio frequency signals to obtain a radio frequency signal with a target amplification factor.

[0011] The present application provides a power amplifier with high standing wave resistance, which divides the radio frequency signal into two n This design makes it possible to divide the power of a signal into smaller parts and distribute them to multiple sub-amplifier units for amplification. This design makes it possible to process a relatively small signal power in each sub-amplifier unit, thereby reducing the burden on a single amplifier while maintaining high amplification efficiency, avoiding problems such as overheating and nonlinear distortion, and improving the efficiency and stability of the overall power amplification. Compared with traditional power amplifiers, the size and weight are reduced while maintaining the ability to resist high standing wave. Due to the use of multiple sub-amplifier units in parallel for amplification, the present application can more easily achieve high-power output. At the same time, by precisely controlling the amplification factor of each sub-amplifier unit, it can ensure that the integrated RF signal reaches the target amplification factor, thereby meeting the application requirements of high power and high gain. In addition, by adjusting the number and amplification factor of the sub-amplifier units, it can flexibly adapt to application scenarios with different frequency bands and different power requirements, thereby improving the flexibility and scalability of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in this application, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0013] Figure 1 This is a schematic diagram of ports when a 90-degree bridge is used as a power distribution port in an embodiment of the present application;

[0014] Figure 2 This is a schematic diagram of a port when a 90-degree bridge is used as a power combiner according to an embodiment of the present application;

[0015] Figure 3 This is a comparison chart of the high standing wave resistance of the power amplifier provided in the embodiments of the present application;

[0016] Figure 4 1 is a schematic structural diagram of a power amplifier with high standing wave resistance provided by an embodiment of the present application;

[0017] Figure 5 This is a principle block diagram of a two-stage 90-degree bridge for four-way power distribution / synthesis provided in an embodiment of the present application;

[0018] Figure 6 This is a block diagram of the principle of eight-way power distribution / synthesis using a three-stage 90-degree bridge according to an embodiment of the present application;

[0019] Figure 7 This is a schematic diagram of a first design operating in the L / S / C bands provided by an embodiment of the present application;

[0020] Figure 8 This is a schematic diagram of a second design operating in the L / S / C bands provided by an embodiment of the present application;

[0021] Figure 9 This is a schematic diagram of a first MCM power amplifier in the L / S / C bands provided by an embodiment of the present application;

[0022] Figure 10 This is a schematic diagram of a third design operating in the L / S / C band provided by an embodiment of the present application;

[0023] Figure 11 This is a fourth design schematic diagram of an embodiment of the present application operating in the L / S / C band;

[0024] Figure 12 This is a schematic diagram of a second MCM power amplifier in the L / S / C bands provided by an embodiment of the present application;

[0025] Figure 13 This is a fifth design schematic diagram of an embodiment of the present application operating in the L / S / C band;

[0026] Figure 14 This is a sixth design schematic diagram of an embodiment of the present application operating in the L / S / C band;

[0027] Figure 15 This is a schematic diagram of a third MCM power amplifier in the L / S / C bands provided by an embodiment of the present application;

[0028] Figure 16 This is a schematic diagram of an L / S / C band monolithic integrated circuit power amplifier provided by an embodiment of the present application;

[0029] Figure 17 This is a schematic diagram of a first design operating in the X / Ku / Ka bands provided by an embodiment of the present application;

[0030] Figure 18 This is a schematic diagram of a second design operating in the X / Ku / Ka bands provided in an embodiment of the present application;

[0031] Figure 19 This is a schematic diagram of an X / Ku / Ka band monolithic integrated circuit power amplifier provided in an embodiment of the present application. DETAILED DESCRIPTION

[0032] In the following description, specific details such as specific system structures and techniques are provided for purposes of illustration rather than limitation to facilitate a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid obscuring the description of the present application with unnecessary detail.

[0033] In order to make the purpose, technical solutions and advantages of this application clearer, specific embodiments will be described below with reference to the accompanying drawings.

[0034] To overcome the performance and functionality degradation of existing amplifiers when exposed to high standing waves at their output ports, this application designs a power amplifier with high standing wave resistance, effectively improving its standing wave adaptability. Compared to traditional power amplifier designs, its comprehensive performance is comparable, but by considering the size of the isolator, its volume and mass are significantly reduced, facilitating system miniaturization and increasing integration.

[0035] The present application cascades four (or eight) monolithic integrated power amplifier circuits (PAMMICs) fabricated on a GaAs or GaN substrate with a two-stage (or three-stage, corresponding to a synthesis of eight) 90-degree bridge (including a Langer bridge) network. The two-stage (or three-stage) 90-degree bridge network is located at the input and output ends of the four (or eight) monolithic integrated power amplifier circuits (PA MMICs). This can be fabricated into a new monolithic integrated power amplifier circuit (PA MMIC) form, or co-packaged in a metal-ceramic tube shell with good heat dissipation performance, or implemented in the form of a multi-chip module (MCM) carrier.

[0036] Among them, the monolithic integrated power amplifier circuit (PA MMIC) realizes the power amplification function of smaller powers. The two-stage (or three-stage) 90-degree bridge network realizes the synthesis (or distribution) of smaller powers to larger powers. It can be made of a ceramic substrate with a conventional dielectric constant or a material of the same quality as the PA MMIC. Each 90-degree bridge has four ports: a straight-through port, a coupling port, an isolation port, an input port (for power distribution) or an output port (for power synthesis). All isolation ports are connected to the absorbing load, and the transfer functions between the straight-through port and the input (output) port, and the coupling port and the input (output) port, show a 90-degree phase difference. While the two-stage (or three-stage) 90-degree bridge realizes multi-channel power synthesis, it also forms a certain degree of reverse transmission isolation between the output port and the load, which weakens the impact of load changes.

[0037] The structural diagram of the 90-degree bridge used for power distribution is shown in the figure below. Figure 1 , including an input terminal 11, a through terminal 12, a coupling terminal 13 and an isolation terminal 14, the isolation terminal 14 is connected to an absorption load, and the absorption load is grounded.

[0038] Refer to the structural diagram of the 90-degree bridge used for power synthesis Figure 2 , including an output terminal 21, a through terminal 22, a coupling terminal 23 and an isolation terminal 24, the isolation terminal 24 is connected to the absorption load, and the absorption load is grounded.

[0039] The present invention, constructed in the manner described above, can achieve a compact, low-mass power amplifier with high standing wave resistance. Its performance is comparable to that of a conventional power amplifier cascade isolator, but its size is significantly smaller than the overall size of a power amplifier cascade isolator. This is particularly true at low frequencies (such as the P and L bands), where the isolator is very large, making further miniaturization difficult. Figure 3 This figure compares the high standing wave (SWR) resistance of two power amplifiers with similar output power, operating in a specific frequency band (f1-f2). The thin solid line at the top represents the output power of a single-chip power amplifier and a cascaded isolator solution with good output matching, with an overall output power of approximately 44dBm (denoted by Piso). The thin dashed line at the top represents the output power of a 44dBm power amplifier (denoted by Psat) using a two-stage 90-degree bridge circuit for input and output, with good output matching. Under a 10:1 SWR, the overall output power of the cascaded power amplifier with the isolator drops to the thick solid line at the bottom, while the output power of the bridge circuit drops to the thick dashed line at the bottom. This shows that the output power variation under high SWR is similar for both solutions. However, the bridge circuit measures approximately 8mm*12mm, while the isolator for the corresponding operating frequency band measures approximately 80mm*80mm. The former has a significant advantage in size, and the chip itself is negligible in terms of quality compared to the isolator.

[0040] Figure 4 This is a schematic diagram of the structure of a power amplifier with high standing wave resistance provided by an embodiment of the present application. Figure 4 As shown, the power amplifier with high standing wave resistance includes a power distribution end network 101, a power synthesis end network 201 and a power n sub-amplifier units (including PA1, PA2, ..., PAi, i=2 n , as a whole defined as 301), the power distribution end network 101, the corresponding sub-amplifier unit PAi and the power synthesis end network 201 are connected in sequence, where n≥2, and n is a positive integer.

[0041] The power distribution end network 101 is used to receive the radio frequency signal of the target frequency band and divide the radio frequency signal into two groups according to power. n The divided RF signals are respectively sent to the corresponding sub-amplifier units PAi.

[0042] Each sub-amplifier unit PAi is used to amplify the received radio frequency signal by a preset amplification factor, and send the amplified radio frequency signal to the power combining end network 201 .

[0043] The power combining end network 201 is used to combine all the amplified radio frequency signals to obtain a radio frequency signal with a target amplification factor.

[0044] In the embodiment of the present application, the input signal may be a radio frequency signal of a different frequency band, or a microwave signal of a different frequency band, and correspondingly, the output signal is a radio frequency signal or a microwave signal of the corresponding frequency band.

[0045] In addition, in the embodiment of the present application, the power distribution end network is used to divide the received radio frequency signal of the target frequency band into two groups according to the power. n At this time, the power of each RF signal is different according to the different proportions of the 90-degree bridge. In an ideal state, the power of each RF signal is equal, and the phase difference between the two output signals of each bridge is 90 degrees. At this time, the proportion distribution of each 90-degree bridge is the same, that is, in an ideal state, the RF signal passing through the power distribution end network is evenly divided into 2 according to the power. n share.

[0046] The embodiment of the present application uses a power distribution end network, a power synthesis end network and 2 n The integration of the three sub-amplifier units results in a power amplifier with high standing wave resistance. The integration of the three replaces the isolator. Compared with the traditional power sensor with high standing wave resistance, its spatial volume and mass are greatly reduced, which facilitates system miniaturization and improves integration.

[0047] Furthermore, the power amplifier provided in the embodiments of the present application is suitable for microwave power amplifiers using active devices based on compounds such as gallium nitride and gallium arsenide as amplification components. When the output load of the power amplifier changes and exhibits a high standing wave state, the output power changes slightly, significantly improving its adaptability to port impedance.

[0048] In one possible implementation, refer to Figure 4 The power distribution end network 101 includes a first-stage bridge 111 and a second-stage bridge 112 . The second-stage bridge 112 includes m sub-stage bridges, where m=n-1.

[0049] The input end of the first-stage bridge 111 is connected to the input end IN of the power amplifier, the first output end of the first-stage bridge 111 is connected to the first input end of the second-stage bridge 112, the second output end of the first-stage bridge 111 is connected to the second input end of the second-stage bridge 112, and the output end of the second-stage bridge is connected to the input end of the corresponding sub-amplifier unit PAi.

[0050] The first-stage bridge 111 is used to receive the RF signal of the target frequency band, divide the RF signal into two parts according to power, obtain a first sub-RF signal and a second sub-RF signal, and send the first sub-RF signal and the second sub-RF signal to the second-stage bridge 112.

[0051] The second stage bridge 112 is used to divide the first sub-RF signal into two n-1 The second sub-RF signal is evenly divided into 2 n-1 and divide it into 2 n-1 The divided first sub-RF signal and the second sub-RF signal are respectively sent to the corresponding sub-amplifier units PAi.

[0052] Among them, in the embodiment of the present application, a two-stage (or three-stage) 90-degree bridge network is mainly used to power synthesize four (or eight) GaAs or GaN MMIC power amplifiers. When a planar process is used for production, the area of the power distribution end network and the power synthesis end network will increase rapidly with the increase in the number of bridge stages, and the practical value is not high, so the number of bridge stages generally does not exceed 3. However, by using a three-dimensional three-dimensional process, the area of the power distribution end network and the power synthesis end network is greatly reduced, and the number of bridge stages can be further expanded. In addition, the first sub-RF signal and the second sub-RF signal may be the same or different.

[0053] Optionally, the power distribution end network in the embodiment of the present application mainly includes a two-stage bridge, the first stage bridge is used to receive the radio frequency signal of the target frequency band, and divide the radio frequency signal into two sub-radio frequency signals according to power, namely the first sub-radio frequency signal and the second sub-radio frequency signal, and then send the first sub-radio frequency signal and the second sub-radio frequency signal to the second stage bridge. The second stage bridge divides the first sub-radio frequency signal and the second sub-radio frequency signal into two sub-radio frequency signals according to the power division rule. n-1 and send them to the corresponding sub-amplifier units respectively.

[0054] The first stage bridge in the embodiment of the present application divides the input signal into two paths, and the second stage bridge further divides each signal into two paths. n-1 This tree-like hierarchical structure disperses the reflected signal energy into multiple sub-paths, significantly reducing standing waves compared to a single-stage structure. Each bridge stage also incorporates a built-in 90-degree phase compensation mechanism to ensure orthogonal phases of the input signals to each sub-amplifier, preventing phase cancellation during synthesis.

[0055] In one possible implementation, refer to Figure 4 The first-stage bridge 111 may include a first 90-degree bridge B11 and a first absorption load R11.

[0056] The input end of the first 90-degree bridge B11 is connected to the input end of the first-stage bridge 111, the coupling end of the first 90-degree bridge B11 is connected to the first output end of the first-stage bridge 111, the through end of the first 90-degree bridge B11 is connected to the second output end of the first-stage bridge 111, the isolation end of the first 90-degree bridge B11 is connected to the first end of the first absorption load R11, and the second end of the first absorption load R11 is grounded.

[0057] Among them, there is only one 90-degree bridge and one absorption load in the first-stage bridge. After passing through the first-stage bridge, the RF signal is divided into two sub-RF signals. The power of the two sub-RF signals varies according to the different proportions of the 90-degree bridge.

[0058] In the embodiment of the present application, there are only two situations for the second-stage bridge, namely:

[0059] In the first case, the second-stage bridge includes only two sub-bridges, and m is 1. Accordingly, the RF signal in the target frequency band is divided into four parts.

[0060] In the second case, the second-stage bridge includes two sub-stage bridges, the first sub-stage bridge includes two sub-bridges, and the second sub-stage bridge includes four sub-bridges. In this case, m is 2, and accordingly, the RF signal of the target frequency band is finally divided into 8 parts.

[0061] In the first case, refer to Figure 5The second-stage bridge 112 includes a first sub-stage bridge 1121 , and the first sub-stage bridge 1121 includes a first sub-bridge W11 and a second sub-bridge W12 .

[0062] An input end of the first sub-bridge W11 is connected to a first output end of the first-stage bridge 111 , and a first output end and a second output end of the first sub-bridge W11 are both connected to corresponding sub-amplifier units.

[0063] An input end of the second sub-bridge W12 is connected to the second output end of the first-stage bridge 111 , and a first output end and a second output end of the second sub-bridge W12 are both connected to corresponding sub-amplifier units.

[0064] The first sub-bridge W11 is used to divide the first sub-RF signal into two parts to obtain a first target RF signal and a second target RF signal, and send the first target RF signal and the second target RF signal to corresponding sub-amplifier units respectively;

[0065] The second sub-bridge W12 is used to divide the second sub-RF signal into two parts to obtain a third target RF signal and a fourth target RF signal, and send the third target RF signal and the fourth target RF signal to corresponding sub-amplifier units respectively.

[0066] Optionally, when there is only one sub-stage bridge in the second-stage bridge, that is, the first sub-stage bridge includes a first sub-bridge and a second sub-bridge, the first sub-bridge divides the first sub-RF signal sent by the first-stage bridge into two parts to obtain a first target RF signal and a second target RF signal, and then sends the first target RF signal and the second target RF signal to corresponding sub-amplifier units. The second sub-bridge divides the second sub-RF signal sent by the first-stage bridge into two parts to obtain a third target RF signal and a fourth target RF signal, and then sends the third target RF signal and the fourth target RF signal to corresponding sub-amplifier units.

[0067] The first target radio frequency signal, the second target radio frequency signal, the third target radio frequency signal and the fourth target radio frequency signal are different according to the proportion distribution of the first sub-bridge and the second sub-bridge.

[0068] Accordingly, refer to Figure 5 The first sub-bridge W11 may include a second 90-degree bridge B12 and a second absorption load R12, and the second sub-bridge W12 may include a third 90-degree bridge B13 and a third absorption load R13.

[0069] The input end of the second 90-degree bridge B12 is connected to the input end of the first sub-bridge W11, the coupling end of the second 90-degree bridge B12 is connected to the first output end of the first sub-bridge W11, the through end of the second 90-degree bridge B12 is connected to the second output end of the first sub-bridge W11, the isolation end of the second 90-degree bridge B12 is connected to the first end of the second absorption load R12, and the second end of the second absorption load R12 is grounded.

[0070] The input end of the third 90-degree bridge B13 is connected to the input end of the second sub-bridge W12, the through end of the third 90-degree bridge B13 is connected to the first output end of the second sub-bridge W12, the coupling end of the third 90-degree bridge B13 is connected to the second output end of the second sub-bridge W12, the isolation end of the third 90-degree bridge B13 is connected to the first end of the third absorption load R13, and the second end of the third absorption load R13 is grounded.

[0071] At this time, there are 4 output terminals of the power distribution network, so refer to Figure 5 As shown, 2 n Each sub-amplifier unit 301 comprises four amplifier modules: a first amplifier module PA1, a second amplifier module PA2, a third amplifier module PA3, and a fourth amplifier module PA4. The first, second, third, and fourth amplifier modules PA1, PA2, PA3, and PA4 all have the same structure, each including a sub-amplifier. The sub-amplifier includes an input, an output, a gate power-on terminal, and a drain power-on terminal. The input is connected to the output of the second-stage bridge, the output is connected to the input of the power combiner network, the gate power-on terminal is connected to the gate power supply VG, and the drain power-on terminal is connected to the drain power supply VD to provide power to the amplifier modules.

[0072] The input end of the first amplification module PA1 is connected to the coupling end of the second 90-degree bridge B12, the input end of the second amplification module PA2 is connected to the through end of the second 90-degree bridge B12, the input end of the third amplification module PA3 is connected to the through end of the third 90-degree bridge B13, and the input end of the fourth amplification module PA4 is connected to the coupling end of the third 90-degree bridge B13.

[0073] Accordingly, in one possible implementation, referring to Figure 5 The power combining end network 201 may include a third-level bridge 211 and a fourth-level bridge 212 , and the third-level bridge 211 includes a third sub-bridge W21 and a fourth sub-bridge W22 .

[0074] The input end of the third sub-bridge W21 is connected to the output end of the corresponding sub-amplifier unit, the output end of the third sub-bridge W21 is connected to the first input end of the fourth-stage bridge 212, the input end of the fourth sub-bridge W22 is connected to the output end of the corresponding sub-amplifier unit, the output end of the fourth sub-bridge W22 is connected to the second input end of the fourth-stage bridge 212, and the output end of the fourth-stage bridge 212 is connected to the output end OUT of the power amplifier.

[0075] The third sub-bridge W21 is configured to integrate the first target RF signal and the second target RF signal amplified by a preset amplification factor to obtain a first integrated RF signal, and send the first integrated RF signal to the fourth-stage bridge 212 .

[0076] The fourth sub-bridge W22 is configured to integrate the third target RF signal and the fourth target RF signal amplified by a preset magnification factor to obtain a second integrated RF signal, and send the second integrated RF signal to the fourth-stage bridge 212 .

[0077] The fourth-stage bridge 212 is configured to integrate the first integrated RF signal and the second integrated RF signal to obtain a RF signal with a target amplification factor.

[0078] Optionally, when the second-stage bridge of the power distribution end network has only one sub-stage bridge, the corresponding power synthesis end network also has two-stage bridges, a third-stage bridge and a fourth-stage bridge, and there are only two sub-bridges in the third-stage bridge, referring to Figure 5 , namely the third sub-bridge W21 and the fourth sub-bridge W22. The third sub-bridge W21 is used to receive the first target RF signal after being amplified by the first amplification module PA1 to a preset amplification factor and the second target RF signal after being amplified by the second amplification module PA2 to a preset amplification factor, and integrate the amplified first target RF signal and the amplified second target RF signal to obtain a first integrated RF signal, and then send the first integrated RF signal to the fourth-stage bridge 212. Correspondingly, the fourth sub-bridge W22 is used to receive the third target RF signal after being amplified by the third amplification module PA3 to a preset amplification factor and the fourth target RF signal after being amplified by the fourth amplification module PA4 to a preset amplification factor, and integrate the amplified third target RF signal and the amplified fourth target RF signal to obtain a second integrated RF signal, and then send the second integrated RF signal to the fourth-stage bridge 212.

[0079] The first integrated RF signal and the second integrated RF signal are integrated by the fourth-stage bridge 212 to obtain a RF signal with a target amplification factor, and the RF signal with the target amplification factor is sent out through the output terminal OUT of the power amplifier.

[0080] The structures of the third sub-bridge W21, the fourth sub-bridge W22 and the fourth-stage bridge 212 are shown in FIG. Figure 5 , specifically:

[0081] The third sub-bridge W21 includes a fourth 90-degree bridge B21 and a fourth absorbing load R21 . The fourth sub-bridge W22 includes a fifth 90-degree bridge B22 and a fifth absorbing load R22 . The fourth-stage bridge 212 includes a sixth 90-degree bridge B23 and a sixth absorbing load R23 .

[0082] The through end of the fourth 90-degree bridge B21 and the coupling end of the fourth 90-degree bridge B21 are both connected to the input end of the third sub-bridge W21, the output end of the fourth 90-degree bridge B21 is connected to the output end of the third sub-bridge W21, the isolation end of the fourth 90-degree bridge B21 is connected to the first end of the fourth absorption load R21, and the second end of the fourth absorption load R21 is grounded.

[0083] The through end of the fifth 90-degree bridge B22 and the coupling end of the fifth 90-degree bridge B22 are both connected to the input end of the fourth sub-bridge W22, the output end of the fifth 90-degree bridge B22 is connected to the output end of the fourth sub-bridge W22, the isolation end of the fifth 90-degree bridge B22 is connected to the first end of the fifth absorption load R22, and the second end of the fifth absorption load R22 is grounded.

[0084] The through end of the sixth 90-degree bridge B23 is connected to the first input end of the fourth-stage bridge 212, the coupling end of the sixth 90-degree bridge B23 is connected to the second input end of the fourth-stage bridge 212, the output end of the sixth 90-degree bridge B23 is connected to the output end of the fourth-stage bridge 212, the isolation end of the sixth 90-degree bridge B23 is connected to the first end of the sixth absorption load R23, and the second end of the sixth absorption load R23 is grounded.

[0085] In the second case, refer to Figure 6 The second-stage bridge 112 may include a second sub-stage bridge 1122 and a third sub-stage bridge 1123. The second sub-stage bridge 1122 includes a fifth sub-bridge W13 and a sixth sub-bridge W14. The third sub-stage bridge 1123 includes a seventh sub-bridge W15, an eighth sub-bridge W16, a ninth sub-bridge W17, and a tenth sub-bridge W18.

[0086] The input end of the fifth sub-bridge W13 is connected to the first output end of the first-stage bridge 111, the first output end of the fifth sub-bridge W13 is connected to the input end of the seventh sub-bridge W15, the second output end of the fifth sub-bridge W13 is connected to the input end of the eighth sub-bridge W16, and the first output end and the second output end of the seventh sub-bridge W15 and the first output end and the second output end of the eighth sub-bridge W16 are all connected to the corresponding sub-amplifier units.

[0087] The input end of the sixth sub-bridge W14 is connected to the second output end of the first-stage bridge 111, the first output end of the sixth sub-bridge W14 is connected to the input end of the ninth sub-bridge W17, the second output end of the sixth sub-bridge W14 is connected to the input end of the tenth sub-bridge W18, and the first output end and the second output end of the ninth sub-bridge W17 as well as the first output end and the second output end of the tenth sub-bridge W18 are all connected to the corresponding sub-amplifier units.

[0088] The fifth sub-bridge W13 is configured to divide the first sub-RF signal into two to obtain a first divided RF signal and a second divided RF signal, and send the first divided RF signal to the seventh sub-bridge W15 and the second divided RF signal to the eighth sub-bridge W16.

[0089] The sixth sub-bridge W14 is configured to divide the second sub-RF signal into two to obtain a third divided RF signal and a fourth divided RF signal, and send the third divided RF signal to the ninth sub-bridge W17 and send the fourth divided RF signal to the tenth sub-bridge W18.

[0090] a seventh sub-bridge W15, configured to divide the first divided RF signal into two to obtain a fifth target RF signal and a sixth target RF signal, and send the fifth target RF signal and the sixth target RF signal to corresponding sub-amplifier units, respectively;

[0091] an eighth sub-bridge W16, configured to divide the second divided RF signal into two to obtain a seventh target RF signal and an eighth target RF signal, and send the seventh target RF signal and the eighth target RF signal to corresponding sub-amplifier units, respectively;

[0092] a ninth sub-bridge W17, configured to divide the third divided RF signal into two to obtain a ninth target RF signal and a tenth target RF signal, and to send the ninth target RF signal and the tenth target RF signal to corresponding sub-amplifier units, respectively;

[0093] The tenth sub-bridge W18 is configured to divide the fourth divided RF signal into two to obtain an eleventh target RF signal and a twelfth target RF signal, and send the eleventh target RF signal and the twelfth target RF signal to corresponding sub-amplifier units, respectively.

[0094] Optionally, when there are two sub-stage bridges in the second-stage bridge, that is, the second sub-stage bridge includes the fifth sub-bridge and the sixth sub-bridge, and the third sub-stage bridge includes the seventh sub-bridge, the eighth sub-bridge, the ninth sub-bridge and the tenth sub-bridge, the fifth sub-bridge in the second sub-stage bridge divides the first sub-RF signal sent by the first-stage bridge into two parts to obtain a first divided RF signal and a second divided RF signal, and then sends the first divided RF signal to the seventh sub-bridge in the third sub-stage bridge, and sends the second divided RF signal to the eighth sub-bridge in the third sub-stage bridge, the seventh sub-bridge divides the first divided RF signal into two parts to obtain a fifth target RF signal and a sixth target RF signal, and sends the fifth target RF signal and the sixth target RF signal to the corresponding sub-amplifier units respectively; the eighth sub-bridge divides the second divided RF signal into two parts to obtain a seventh target RF signal and an eighth target RF signal, and sends the seventh target RF signal and the eighth target RF signal to the corresponding sub-amplifier units respectively. The sixth sub-bridge in the second sub-stage bridge divides the second sub-RF signal into two parts to obtain a third divided RF signal and a fourth divided RF signal, and sends the third divided RF signal to the ninth sub-bridge in the third sub-stage bridge, and sends the fourth divided RF signal to the tenth sub-bridge in the third sub-stage bridge. The ninth sub-bridge divides the third divided RF signal into two parts to obtain a ninth target RF signal and a tenth target RF signal, and sends the ninth target RF signal and the tenth target RF signal to the corresponding sub-amplifier units respectively; the tenth sub-bridge divides the fourth divided RF signal into two parts to obtain an eleventh target RF signal and a twelfth target RF signal, and sends the eleventh target RF signal and the twelfth target RF signal to the corresponding sub-amplifier units respectively.

[0095] Among them, the first divided RF signal, the second divided RF signal, the third divided RF signal, and the fourth divided RF signal vary according to the different proportions of the fifth sub-bridge and the sixth sub-bridge. The fifth target RF signal, the sixth target RF signal, the seventh target RF signal, the eighth target RF signal, the ninth target RF signal, the tenth target RF signal, the eleventh target RF signal, and the twelfth target RF signal vary according to the different proportions of the seventh sub-bridge, the eighth sub-bridge, the ninth sub-bridge, and the tenth sub-bridge. Ideally, the first divided RF signal and the second divided RF signal have equal power and a 90-degree phase difference, the third divided RF signal and the fourth divided RF signal have equal power and a 90-degree phase difference, the fifth target RF signal and the sixth target RF signal have equal power and a 90-degree phase difference, the seventh target RF signal and the eighth target RF signal have equal power and a 90-degree phase difference, the ninth target RF signal and the tenth target RF signal have equal power and a 90-degree phase difference, and the eleventh target RF signal and the twelfth target RF signal have equal power and a 90-degree phase difference.

[0096] Accordingly, refer to Figure 6 The fifth sub-bridge W13 may include a fourteenth 90-degree bridge B14 and a fourteenth absorption load R14, the sixth sub-bridge W14 includes a fifteenth 90-degree bridge B15 and a fifteenth absorption load R15, the seventh sub-bridge W15 includes a sixteenth 90-degree bridge B16 and a sixteenth absorption load R16, the eighth sub-bridge W16 includes a seventeenth 90-degree bridge B17 and a seventeenth absorption load R17, the ninth sub-bridge W17 includes an eighteenth 90-degree bridge B18 and an eighteenth absorption load R18, and the tenth sub-bridge W18 includes a nineteenth 90-degree bridge B19 and a nineteenth absorption load R19.

[0097] The input end of the fourteenth 90-degree bridge B14 is connected to the input end of the fifth sub-bridge W13, the coupling end of the fourteenth 90-degree bridge B14 is connected to the first output end of the fifth sub-bridge W13, the through end of the fourteenth 90-degree bridge B14 is connected to the second output end of the fifth sub-bridge W13, the isolation end of the fourteenth 90-degree bridge B14 is connected to the first end of the fourteenth absorption load R14, and the second end of the fourteenth absorption load R14 is grounded.

[0098] The input end of the fifteenth 90-degree bridge B15 is connected to the input end of the sixth sub-bridge W14, the through end of the fifteenth 90-degree bridge B15 is connected to the first output end of the sixth sub-bridge W14, the coupling end of the fifteenth 90-degree bridge B15 is connected to the second output end of the sixth sub-bridge W14, the isolation end of the fifteenth 90-degree bridge B15 is connected to the first end of the fifteenth absorption load R15, and the second end of the fifteenth absorption load R15 is grounded.

[0099] The input end of the sixteenth 90-degree bridge B16 is connected to the input end of the seventh sub-bridge W15, the coupling end of the sixteenth 90-degree bridge B16 is connected to the first output end of the seventh sub-bridge W15, the through end of the sixteenth 90-degree bridge B16 is connected to the second output end of the seventh sub-bridge W15, the isolation end of the sixteenth 90-degree bridge B16 is connected to the first end of the sixteenth absorption load R16, and the second end of the sixteenth absorption load R16 is grounded.

[0100] The input end of the seventeenth 90-degree bridge B17 is connected to the input end of the eighth sub-bridge W16, the through end of the seventeenth 90-degree bridge B17 is connected to the first output end of the eighth sub-bridge W16, the coupling end of the seventeenth 90-degree bridge B17 is connected to the second output end of the eighth sub-bridge W16, the isolation end of the seventeenth 90-degree bridge B17 is connected to the first end of the seventeenth absorption load R17, and the second end of the seventeenth absorption load R17 is grounded.

[0101] The input end of the eighteenth 90-degree bridge B18 is connected to the input end of the ninth sub-bridge W17, the coupling end of the eighteenth 90-degree bridge B18 is connected to the first output end of the ninth sub-bridge W17, the through end of the eighteenth 90-degree bridge B18 is connected to the second output end of the ninth sub-bridge W17, the isolation end of the eighteenth 90-degree bridge B18 is connected to the first end of the eighteenth absorption load R18, and the second end of the eighteenth absorption load R18 is grounded.

[0102] The input end of the nineteenth 90-degree bridge B19 is connected to the input end of the tenth sub-bridge W18, the through end of the nineteenth 90-degree bridge B19 is connected to the first output end of the tenth sub-bridge W18, the coupling end of the nineteenth 90-degree bridge B19 is connected to the second output end of the tenth sub-bridge W18, the isolation end of the nineteenth 90-degree bridge B19 is connected to the first end of the nineteenth absorption load R19, and the second end of the nineteenth absorption load R19 is grounded.

[0103] At this time, there are 8 output terminals of the power distribution network, so refer to Figure 6 As shown, refer to Figure 5 As shown, 2 n Each sub-amplifier unit 301 comprises eight amplifier modules, namely, the fifth amplifier module PA5, the sixth amplifier module PA6, the seventh amplifier module PA7, the eighth amplifier module PA8, the ninth amplifier module PA9, the tenth amplifier module PA10, the eleventh amplifier module PA11, and the twelfth amplifier module PA12. The fifth, sixth, seventh, eighth, eighth, ninth, tenth, tenth, eleventh, and twelfth amplifier modules PA5, PA6, PA7, PA8, PA9, PA10, PA11, and PA12 all have the same structure, each including a sub-amplifier. The sub-amplifier includes an input, an output, a gate power-on terminal, and a drain power-on terminal. The input is connected to the output of the second-stage bridge, the output is connected to the input of the power combiner network, the gate power-on terminal is connected to the gate power supply VG, and the drain power-on terminal is connected to the drain power supply VD to provide power to the amplifier module.

[0104] The input end of the fifth amplifying module PA5 is connected to the coupling end of the sixteenth 90-degree bridge B16, the input end of the sixth amplifying module PA6 is connected to the through end of the sixteenth 90-degree bridge B16, the input end of the seventh amplifying module PA7 is connected to the through end of the seventeenth 90-degree bridge B17, the input end of the eighth amplifying module PA8 is connected to the coupling end of the seventeenth 90-degree bridge B17, the input end of the ninth amplifying module PA9 is connected to the coupling end of the eighteenth 90-degree bridge B18, the input end of the tenth amplifying module PA10 is connected to the through end of the eighteenth 90-degree bridge B18, the input end of the eleventh amplifying module PA11 is connected to the through end of the nineteenth 90-degree bridge B19, and the input end of the twelfth amplifying module PA12 is connected to the coupling end of the nineteenth 90-degree bridge B19.

[0105] Accordingly, in one possible implementation, referring to Figure 6 The power synthesis end network 201 includes a fifth-level bridge 213, a sixth-level bridge 214 and a seventh-level bridge 215. The fifth-level bridge 213 includes an eleventh sub-bridge W23, a twelfth sub-bridge W24, a thirteenth sub-bridge W25 and a fourteenth sub-bridge W26. The sixth-level bridge 214 includes a fifteenth sub-bridge W27 and a sixteenth sub-bridge W28.

[0106] The input end of the eleventh sub-bridge W23, the input end of the twelfth sub-bridge W24, the input end of the thirteenth sub-bridge W25 and the input end of the fourteenth sub-bridge W26 are respectively connected to the output ends of the corresponding sub-amplifier units, the output end of the eleventh sub-bridge W23 is connected to the first input end of the fifteenth sub-bridge W27, the output end of the twelfth sub-bridge W24 is connected to the second input end of the fifteenth sub-bridge W27, the output end of the thirteenth sub-bridge W25 is connected to the first input end of the sixteenth sub-bridge W28, the output end of the fourteenth sub-bridge W26 is connected to the second input end of the sixteenth sub-bridge W28, the output end of the fifteenth sub-bridge W27 is connected to the first input end of the seventh-stage bridge 215, the output end of the sixteenth sub-bridge W28 is connected to the second input end of the seventh-stage bridge 215, and the output end of the seventh-stage bridge 215 is connected to the output end OUT of the power amplifier.

[0107] The eleventh sub-bridge W23 is configured to integrate the fifth target RF signal and the sixth target RF signal amplified by a preset amplification factor to obtain a third integrated RF signal, and send the third integrated RF signal to the fifteenth sub-bridge W27.

[0108] The twelfth sub-bridge W24 is configured to integrate the seventh target RF signal and the eighth target RF signal amplified by a preset amplification factor to obtain a fourth integrated RF signal, and send the fourth integrated RF signal to the fifteenth sub-bridge W27.

[0109] The thirteenth sub-bridge W25 is used to integrate the ninth target RF signal and the tenth target RF signal after being amplified by a preset amplification factor to obtain a fifth integrated RF signal, and send the fifth integrated RF signal to the sixteenth sub-bridge W28.

[0110] The fourteenth sub-bridge W26 is configured to integrate the eleventh target RF signal and the twelfth target RF signal amplified by a preset amplification factor to obtain a sixth integrated RF signal, and send the sixth integrated RF signal to the sixteenth sub-bridge W28.

[0111] The fifteenth sub-bridge W27 is configured to integrate the third integrated RF signal and the fourth integrated RF signal to obtain a seventh integrated RF signal, and send the seventh integrated RF signal to the seventh-stage bridge 215 .

[0112] The sixteenth sub-bridge W28 is configured to integrate the fifth integrated RF signal and the sixth integrated RF signal to obtain an eighth integrated RF signal, and send the eighth integrated RF signal to the seventh-stage bridge 215 .

[0113] The seventh-stage bridge 215 is used to integrate the seventh integrated radio frequency signal and the eighth integrated radio frequency signal to obtain a radio frequency signal with a target amplification factor.

[0114] Optionally, when there are two sub-bridges in the second stage of the power distribution end network, the corresponding power synthesis end network has three bridges, namely, a fifth bridge, a sixth bridge and a seventh bridge, and the fifth bridge includes four sub-bridges, referring to Figure 6 , namely the eleventh sub-bridge W23, the twelfth sub-bridge W24, the thirteenth sub-bridge W25 and the fourteenth sub-bridge W26; the sixth-level bridge includes two sub-bridges, refer to Figure 6 , namely the fifteenth sub-bridge W27 and the sixteenth sub-bridge W28.

[0115] The eleventh sub-bridge W23 is configured to receive the fifth target RF signal after being amplified by a preset amplification factor by the fifth amplification module PA5 and the sixth target RF signal after being amplified by a preset amplification factor by the sixth amplification module PA6, and integrate them to obtain a third integrated RF signal, which is then sent to the fifteenth sub-bridge W27. The twelfth sub-bridge W24 is configured to receive the seventh target RF signal after being amplified by a preset amplification factor by the seventh amplification module PA7 and the eighth target RF signal after being amplified by a preset amplification factor by the eighth amplification module PA8, and integrate them to obtain a fourth integrated RF signal, which is then sent to the fifteenth sub-bridge W27. The thirteenth sub-bridge W25 is configured to receive the ninth target RF signal after being amplified by a preset amplification factor by the ninth amplification module PA9 and the tenth target RF signal after being amplified by a preset amplification factor by the tenth amplification module PA10, and integrate them to obtain a fifth integrated RF signal, which is then sent to the sixteenth sub-bridge W28. The fourteenth sub-bridge W26 is used to receive and integrate the eleventh target RF signal after being amplified by the eleventh amplification module PA11 to a preset amplification factor and the twelfth target RF signal after being amplified by the twelfth amplification module PA12 to obtain a sixth integrated RF signal, and send the sixth integrated RF signal to the sixteenth sub-bridge W28.

[0116] Then, the third integrated RF signal and the fourth integrated RF signal are integrated using the fifteenth sub-bridge W27 to obtain a seventh integrated RF signal, and the seventh integrated RF signal is sent to the seventh-stage bridge 215. The fifth integrated RF signal and the sixth integrated RF signal are integrated using the sixteenth sub-bridge W28 to obtain an eighth integrated RF signal, and the eighth integrated RF signal is sent to the seventh-stage bridge 215.

[0117] Finally, the seventh integrated RF signal and the eighth integrated RF signal are integrated by the seventh-stage bridge 215 to obtain a RF signal with a target amplification factor, and the RF signal with a target amplification factor is sent out through the output terminal OUT of the power amplifier.

[0118] The structures of the eleventh sub-bridge W23, the twelfth sub-bridge W24, the thirteenth sub-bridge W25, the fourteenth sub-bridge W26, the fifteenth sub-bridge W27 and the sixteenth sub-bridge W28 are shown in FIG. Figure 5 , specifically:

[0119] The eleventh sub-bridge W23 includes the seventh 90-degree bridge B24 and the seventh absorption load R24, the twelfth sub-bridge W24 includes the eighth 90-degree bridge B25 and the eighth absorption load R25, the thirteenth sub-bridge includes the ninth 90-degree bridge B26 and the ninth absorption load R26, the fourteenth sub-bridge includes the tenth 90-degree bridge B27 and the tenth absorption load R27, the fifteenth sub-bridge includes the eleventh 90-degree bridge B28 and the eleventh absorption load R28, the sixteenth sub-bridge includes the twelfth 90-degree bridge B29 and the twelfth absorption load R29, and the seventh-level bridge includes the thirteenth 90-degree bridge B30 and the thirteenth absorption load R30.

[0120] The through end and the coupling end of the seventh 90-degree bridge B24 are both connected to the input end of the eleventh sub-bridge W23, the output end of the seventh 90-degree bridge B24 is connected to the output end of the eleventh sub-bridge W23, the isolation end of the seventh 90-degree bridge B24 is connected to the first end of the seventh absorption load R24, and the second end of the seventh absorption load R24 is grounded.

[0121] The coupling end and the through end of the eighth 90-degree bridge B25 are both connected to the input end of the twelfth sub-bridge W24, the output end of the eighth 90-degree bridge B25 is connected to the output end of the twelfth sub-bridge W24, the isolation end of the eighth 90-degree bridge B25 is connected to the first end of the eighth absorption load R25, and the second end of the eighth absorption load R25 is grounded.

[0122] The through end and the coupling end of the ninth 90-degree bridge B26 are both connected to the input end of the thirteenth sub-bridge W25, the output end of the ninth 90-degree bridge B26 is connected to the output end of the thirteenth sub-bridge W25, the isolation end of the ninth 90-degree bridge B26 is connected to the first end of the ninth absorption load R26, and the second end of the ninth absorption load R26 is grounded.

[0123] The coupling end and the through end of the tenth 90-degree bridge B27 are both connected to the input end of the fourteenth sub-bridge W26, the output end of the tenth 90-degree bridge B27 is connected to the output end of the fourteenth sub-bridge W26, the isolation end of the tenth 90-degree bridge B27 is connected to the first end of the tenth absorption load R27, and the second end of the tenth absorption load R27 is grounded.

[0124] The through end of the eleventh 90-degree bridge B28 is connected to the first input end of the fifteenth sub-bridge W27, the coupling end of the eleventh 90-degree bridge B28 is connected to the second input end of the fifteenth sub-bridge W27, the output end of the eleventh 90-degree bridge B28 is connected to the output end of the fifteenth sub-bridge W27, the isolation end of the eleventh 90-degree bridge B28 is connected to the first end of the eleventh absorption load R28, and the second end of the eleventh absorption load R28 is grounded.

[0125] The coupling end of the twelfth 90-degree bridge B29 is connected to the first input end of the sixteenth sub-bridge W28, the through end of the twelfth 90-degree bridge B29 is connected to the second input end of the sixteenth sub-bridge W28, the output end of the twelfth 90-degree bridge B29 is connected to the output end of the sixteenth sub-bridge W28, the isolation end of the twelfth 90-degree bridge B29 is connected to the first end of the twelfth absorption load R29, and the second end of the twelfth absorption load R29 is grounded.

[0126] The through end of the thirteenth 90-degree bridge B30 is connected to the first input end of the seventh-level bridge 215, the coupling end of the thirteenth 90-degree bridge B30 is connected to the second input end of the seventh-level bridge 215, the output end of the thirteenth 90-degree bridge B30 is connected to the output end of the seventh-level bridge 215, the isolation end of the thirteenth 90-degree bridge B30 is connected to the first end of the thirteenth absorption load R30, and the second end of the thirteenth absorption load R30 is grounded.

[0127] The embodiments of this application are based on Figure 5 The input and output shown in the figure each use a two-stage 90-degree bridge network to perform four-way power synthesis. The L / S / C band and X / Ku / Ka band can be integrated separately to obtain an integrated circuit power amplifier with four-way synthesis in different bands. There are five forms in total, as follows:

[0128] The first form works in the L / S / C band, refer to Figure 7 and Figure 8 In the two-stage 90-degree bridge network, the first-stage bridge adopts a spiral external interface and the second-stage bridge adopts a bow-shaped folding design. Figure 7 and Figure 8 They are usually used in pairs as the input and output networks of power amplifiers.

[0129] Reference Figure 7 The first-stage bridge network consists of two 90-degree bridges, B21 and B22, symmetrically distributed along the centerline. Both isolation terminals are connected to absorptive loads, fabricated using on-chip thin-film resistors. The second-stage bridge network consists of only one 90-degree bridge, B23, with an absorptive load connected to the isolation terminal. P211 connects the output port of B21 to the coupling port of B23, connected by a short stripline. P221 connects the output port of B22 to the pass-through port of B23, connected by a short stripline. P231 connects the output port of B23 to the signal output port via the output conversion network A23.

[0130] Reference Figure 8The first-stage bridge network consists of two bridges, B11 and B12, with both isolation terminals connected to an absorptive load made of on-chip thin-film resistors. The second-stage bridge network consists of only one bridge, B13, with the isolation terminal connected to an absorptive load. P111 is the input port of B11, connected to the through-port P132 of B13 via the interstage conversion network C11; P121 is the input port of B12, connected to the coupled port P133 of B13 via the interstage conversion network C12; and P131 is the input port of B13, connected to the signal input port via the input conversion network A13.

[0131] Figure 9 To work in L / S / C band, the input and output networks are respectively Figure 7 and Figure 8 The MCM form power amplifier performs four-way synthesis in a manner, specifically, the input ports (P1_1~P4_1) and output ports (P1_2~P4_2) of the four power amplifiers (chip 2~chip 5) are connected to chip 1 ( Figure 7 )、Chip 2( Figure 8 )'s first-stage bridge's through-ends and coupled-ends are connected in sequence.

[0132] The second mode works in L / S / C band, refer to Figure 10 and Figure 11 In the two-stage 90-degree bridge network, the first-stage bridge adopts a spiral internal interface and the second-stage adopts a bow-shaped folding design. Figure 10 and Figure 11 They are usually used in pairs as the input and output networks of power amplifiers.

[0133] Reference Figure 10 The first-stage bridge network consists of two 90-degree bridges, B21 and B22, symmetrically arranged along the centerline. The second-stage bridge network consists of only one 90-degree bridge, B23. All three bridges are fabricated on a single substrate. Gold bonding wires connect B21's output terminal, P211, to B23's coupling terminal, P233. Gold bonding wires connect B21's isolation terminal, P214, to an absorbing load. Gold bonding wires also lead to B21's through-terminal, P212, and coupling terminal, P213. Gold bonding wires also connect B22's output terminal, P221, to B23's through-terminal, P232. Gold bonding wires also connect B22's isolation terminal, P224, to an absorbing load. Gold bonding wires also lead to B22's through-terminal, P222, and coupling terminal, P223. Gold bonding wires also lead to B23's isolation terminal, P234, to an absorbing load. B23's output terminal, P231, is connected to the output terminal via a gold bonding wire. The absorbing load is fabricated using on-chip thin-film resistors.

[0134] Reference Figure 11The first-stage bridge network consists of two 90-degree bridges, B11 and B12, symmetrically arranged along the centerline. The second-stage bridge network consists of only one 90-degree bridge, B13. All three bridges are fabricated on a single substrate. Gold bonding wires connect B11's input terminal, P111, to B13's through-terminal, P132. Gold bonding wires are used to connect B11's isolation terminal, P114, to an absorbing load. Gold bonding wires are also used to connect B11's through-terminal, P112, and coupling terminal, P113. Gold bonding wires are also used to connect B12's input terminal, P121, to B13's coupling terminal, P133. Gold bonding wires are also used to connect B12's isolation terminal, P124, to an absorbing load. Gold bonding wires are also used to connect B12's through-terminal, P122, and coupling terminal, P123. Gold bonding wires are also used to connect B13's isolation terminal, P134, to an absorbing load. Gold bonding wires are also used to connect B13's input terminal, P131. The absorbing load is fabricated using on-chip thin-film resistors.

[0135] Figure 12 To work in L / S / C band, the input and output networks are respectively Figure 10 and Figure 11 The MCM form power amplifier performs four-way synthesis, specifically: four power amplifiers and Figure 10 、 Figure 11 The bridge network shown is interconnected in the same way as Figure 9 same.

[0136] The third mode works in the L / S / C band, refer to Figure 13 and Figure 14 Each bridge in the two-stage 90-degree bridge network adopts a bow-shaped folding design, and the two-stage folding styles are different. Figure 13 and Figure 14 They are usually used in pairs as the input and output networks of power amplifiers.

[0137] Reference Figure 13 The output terminal P211 of B21 is connected to the coupling terminal P233 of B23 through the interstage conversion network C21; the output terminal P221 of B22 is connected to the through terminal P232 of B23 through the interstage conversion network C21. The rest of the connection methods are the same as Figure 10 same.

[0138] Reference Figure 14 The input terminal P111 of B11 is connected to the through terminal P132 of B13 through the interstage conversion network C11; the input terminal P121 of B12 is connected to the coupling terminal P133 of B13 through the interstage conversion network C12. The rest of the connection methods are the same as Figure 11 same.

[0139] Figure 15 To work in L / S / C band, the input and output networks are respectively Figure 13 and Figure 14The MCM form power amplifier performs four-way synthesis, specifically: four power amplifiers and Figure 13 、 Figure 14 The bridge network shown is interconnected in the same way as Figure 9 same.

[0140] The fourth mode works in L / S / C band. Figure 16 To work in L / S / C band, the input and output networks are respectively Figure 13 and Figure 14 A monolithic integrated circuit power amplifier is provided that performs four-way synthesis in a monolithic integrated circuit manner. Figure 16 There are four power amplifiers with Figure 13 、 Figure 14 The bridge network shown is fabricated on the same substrate, forming a new PA MMIC. The four power amplifiers are connected to the bridge network directly via on-chip metal layers. The second stage B23 of the output bridge network uses a special-shaped circuit to connect the outputs of the two first-stage bridges directly to the coupling and pass-through terminals of B23. The output of B23 is connected to the signal output port via the output conversion network A13. The second stage B13 of the input bridge network uses a special-shaped circuit to connect the outputs of the two first-stage bridges to the coupling and pass-through terminals of B13 via the interstage conversion networks C11 and C12. The input of B13 is connected to the signal input port via the input conversion network A11. All other ports are connected to on-chip thin-film resistors.

[0141] The fifth mode operates in the X / Ku / Ka bands, refer to Figure 17 and Figure 18 The bridges of the two-stage 90-degree bridge network both adopt a parallel distribution design; the internal connection methods of the two figures are different, and they are usually used in pairs as the input network and output network of the power amplifier.

[0142] Reference Figure 17 The output terminal P211 of B21 is connected to the coupling terminal P233 of B23 via the interstage conversion network C21. The output terminal P221 of B22 is connected to the through terminal P232 of B23 via the interstage conversion network C22. The output terminal P231 of B23 is connected to the signal output port via the output conversion network A23. The remaining ports are connected to on-chip thin-film resistors.

[0143] Reference Figure 18 The input terminal P111 of B11 is connected to the through-terminal P132 of B13 via the interstage conversion network C11. The input terminal P121 of B12 is connected to the coupling terminal P133 of B13 via the interstage conversion network C12. The input terminal P131 of B13 is connected to the signal input port via the input conversion network A13. The remaining ports are connected to on-chip thin-film resistors.

[0144] Figure 19 To operate in X / Ku / Ka bands, both input and output networks adopt Figure 14 / Figure 15 This four-way power amplifier is a monolithic integrated circuit (MIC) integrated circuit. Specifically, the four power amplifiers and the bridge network are fabricated on the same substrate, forming a new PA MMIC. The four power amplifiers are connected to the bridge network via direct on-chip metal film connections. The two stages within the bridge network are connected via an interstage conversion network. The signal input is connected to the input of the second-stage bridge via the input conversion network, and the signal output is connected to the output of the second-stage bridge via the output conversion network. All isolated bridge terminals are connected to an absorptive load and are fabricated using an on-chip metal film process.

[0145] The present application provides a power amplifier with high standing wave resistance, which divides the radio frequency signal into two equal parts through a power distribution network. n This design makes it possible to divide the power of a signal into smaller parts and distribute them to multiple sub-amplifier units for amplification. This design makes it possible to process a relatively small signal power in each sub-amplifier unit, thereby reducing the burden on a single amplifier while maintaining high amplification efficiency, avoiding problems such as overheating and nonlinear distortion, and improving the efficiency and stability of the overall power amplification. Compared with traditional power amplifiers, the size and weight are reduced while maintaining the ability to resist high standing wave. Due to the use of multiple sub-amplifier units in parallel for amplification, the present application can more easily achieve high-power output. At the same time, by precisely controlling the amplification factor of each sub-amplifier unit, it can ensure that the integrated RF signal reaches the target amplification factor, thereby meeting the application requirements of high power and high gain. In addition, by adjusting the number and amplification factor of the sub-amplifier units, it can flexibly adapt to application scenarios with different frequency bands and different power requirements, thereby improving the flexibility and scalability of the system.

[0146] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0147] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some of the technical features thereof can be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A power amplifier with high standing wave resistance, characterized in that: The power amplifier includes a power distribution end network, a power synthesis end network and a n sub-amplifier units, the power distribution end network, the corresponding sub-amplifier units and the power synthesis end network are connected in sequence, wherein n≥2, and n is a positive integer; The power distribution end network is used to receive the radio frequency signal of the target frequency band and divide the radio frequency signal into two n and sending the divided RF signals to the corresponding sub-amplifier units respectively; Each sub-amplifier unit is used to amplify the received radio frequency signal by a preset amplification factor and send the amplified radio frequency signal to the power synthesis end network; The power combining end network is used to integrate all the amplified radio frequency signals to obtain a radio frequency signal with a target amplification factor.

2. The power amplifier with high standing wave resistance according to claim 1, characterized in that: The power distribution end network includes a first-stage bridge and a second-stage bridge, the second-stage bridge includes m sub-stage bridges, m=n-1; The input end of the first-stage bridge is connected to the input end of the power amplifier, the first output end of the first-stage bridge is connected to the first input end of the second-stage bridge, the second output end of the first-stage bridge is connected to the second input end of the second-stage bridge, and the output end of the second-stage bridge is connected to the input end of the corresponding sub-amplifier unit; The first-stage bridge is configured to receive the radio frequency signal of the target frequency band, divide the radio frequency signal into two parts according to power, obtain a first sub-radio frequency signal and a second sub-radio frequency signal, and send the first sub-radio frequency signal and the second sub-radio frequency signal to the second-stage bridge; The second stage bridge is used to divide the first sub-RF signal into 2 n-1 The second sub-RF signal is divided into 2 n-1 and divide it into 2 n-1 The divided first sub-RF signal and the second sub-RF signal are respectively sent to the corresponding sub-amplifier units.

3. The power amplifier with high standing wave resistance according to claim 2, characterized in that: The first-stage bridge includes a first 90-degree bridge and a first absorbing load; The input end of the first 90-degree bridge is connected to the input end of the first-stage bridge, the coupling end of the first 90-degree bridge is connected to the first output end of the first-stage bridge, the through end of the first 90-degree bridge is connected to the second output end of the first-stage bridge, the isolation end of the first 90-degree bridge is connected to the first end of the first absorption load, and the second end of the first absorption load is grounded.

4. The power amplifier with high standing wave resistance according to claim 2, characterized in that: When n is 2 and m is 1, the second-stage bridge includes a first sub-stage bridge, and the first sub-stage bridge includes a first sub-bridge and a second sub-bridge; The input end of the first sub-bridge is connected to the first output end of the first-stage bridge, and the first output end and the second output end of the first sub-bridge are both connected to corresponding sub-amplifier units; The input end of the second sub-bridge is connected to the second output end of the first-stage bridge, and the first output end and the second output end of the second sub-bridge are both connected to corresponding sub-amplifier units; The first sub-bridge is configured to divide the first sub-RF signal into two parts to obtain a first target RF signal and a second target RF signal, and send the first target RF signal and the second target RF signal to corresponding sub-amplifier units respectively; The second sub-bridge is used to divide the second sub-RF signal into two parts to obtain a third target RF signal and a fourth target RF signal, and send the third target RF signal and the fourth target RF signal to corresponding sub-amplifier units respectively.

5. The power amplifier with high standing wave resistance according to claim 4, characterized in that: The first sub-bridge includes a second 90-degree bridge and a second absorption load, and the second sub-bridge includes a third 90-degree bridge and a third absorption load; The input end of the second 90-degree bridge is connected to the input end of the first sub-bridge, the coupling end of the second 90-degree bridge is connected to the first output end of the first sub-bridge, the through end of the second 90-degree bridge is connected to the second output end of the first sub-bridge, the isolation end of the second 90-degree bridge is connected to the first end of the second absorption load, and the second end of the second absorption load is grounded; The input end of the third 90-degree bridge is connected to the input end of the second sub-bridge, the through end of the third 90-degree bridge is connected to the first output end of the second sub-bridge, the coupling end of the third 90-degree bridge is connected to the second output end of the second sub-bridge, the isolation end of the third 90-degree bridge is connected to the first end of the third absorption load, and the second end of the third absorption load is grounded.

6. The power amplifier with high standing wave resistance according to claim 4, characterized in that: The power synthesis end network includes a third-level bridge and a fourth-level bridge, and the third-level bridge includes a third sub-bridge and a fourth sub-bridge; The input end of the third sub-bridge is connected to the output end of the corresponding sub-amplifier unit, the output end of the third sub-bridge is connected to the first input end of the fourth-stage bridge, the input end of the fourth sub-bridge is connected to the output end of the corresponding sub-amplifier unit, the output end of the fourth sub-bridge is connected to the second input end of the fourth-stage bridge, and the output end of the fourth-stage bridge is connected to the output end of the power amplifier; The third sub-bridge is used to integrate the first target radio frequency signal and the second target radio frequency signal after being amplified by a preset amplification factor to obtain a first integrated radio frequency signal, and send the first integrated radio frequency signal to the fourth-stage bridge; The fourth sub-bridge is used to integrate the third target radio frequency signal and the fourth target radio frequency signal after being amplified by a preset amplification factor to obtain a second integrated radio frequency signal, and send the second integrated radio frequency signal to the fourth-stage bridge; The fourth-stage bridge is used to integrate the first integrated radio frequency signal and the second integrated radio frequency signal to obtain the radio frequency signal with the target amplification factor.

7. The power amplifier with high standing wave resistance according to claim 6, characterized in that: The third sub-bridge includes a fourth 90-degree bridge and a fourth absorption load, the fourth sub-bridge includes a fifth 90-degree bridge and a fifth absorption load, and the fourth-level bridge includes a sixth 90-degree bridge and a sixth absorption load; The through end of the fourth 90-degree bridge and the coupling end of the fourth 90-degree bridge are both connected to the input end of the third sub-bridge, the output end of the fourth 90-degree bridge is connected to the output end of the third sub-bridge, the isolation end of the fourth 90-degree bridge is connected to the first end of the fourth absorption load, and the second end of the fourth absorption load is grounded; The through end of the fifth 90-degree bridge and the coupling end of the fifth 90-degree bridge are both connected to the input end of the fourth sub-bridge, the output end of the fifth 90-degree bridge is connected to the output end of the fourth sub-bridge, the isolation end of the fifth 90-degree bridge is connected to the first end of the fifth absorption load, and the second end of the fifth absorption load is grounded; The through end of the sixth 90-degree bridge is connected to the first input end of the fourth-level bridge, the coupling end of the sixth 90-degree bridge is connected to the second input end of the fourth-level bridge, the output end of the sixth 90-degree bridge is connected to the output end of the fourth-level bridge, the isolation end of the sixth 90-degree bridge is connected to the first end of the sixth absorption load, and the second end of the sixth absorption load is grounded.

8. The power amplifier with high standing wave resistance according to claim 2, characterized in that: When n is 3 and m is 2, the second-stage bridge includes a second sub-stage bridge and a third sub-stage bridge, the second sub-stage bridge includes a fifth sub-bridge and a sixth sub-bridge, and the third sub-stage bridge includes a seventh sub-bridge, an eighth sub-bridge, a ninth sub-bridge, and a tenth sub-bridge; The input end of the fifth sub-bridge is connected to the first output end of the first-stage bridge, the first output end of the fifth sub-bridge is connected to the input end of the seventh sub-bridge, the second output end of the fifth sub-bridge is connected to the input end of the eighth sub-bridge, and the first and second output ends of the seventh sub-bridge and the first and second output ends of the eighth sub-bridge are all connected to corresponding sub-amplifier units; The input end of the sixth sub-bridge is connected to the second output end of the first-stage bridge, the first output end of the sixth sub-bridge is connected to the input end of the ninth sub-bridge, the second output end of the sixth sub-bridge is connected to the input end of the tenth sub-bridge, and the first and second output ends of the ninth sub-bridge and the first and second output ends of the tenth sub-bridge are all connected to corresponding sub-amplifier units; the fifth sub-bridge is configured to divide the first sub-RF signal into two parts to obtain a first divided RF signal and a second divided RF signal, and send the first divided RF signal to the seventh sub-bridge, and send the second divided RF signal to the eighth sub-bridge; the sixth sub-bridge is configured to divide the second sub-RF signal into two parts to obtain a third divided RF signal and a fourth divided RF signal, and send the third divided RF signal to the ninth sub-bridge, and send the fourth divided RF signal to the tenth sub-bridge; the seventh sub-bridge is configured to divide the first divided RF signal into two parts to obtain a fifth target RF signal and a sixth target RF signal, and send the fifth target RF signal and the sixth target RF signal to corresponding sub-amplifier units respectively; the eighth sub-bridge is configured to divide the second divided RF signal into two parts to obtain a seventh target RF signal and an eighth target RF signal, and send the seventh target RF signal and the eighth target RF signal to corresponding sub-amplifier units respectively; the ninth sub-bridge being configured to divide the third divided RF signal into two to obtain a ninth target RF signal and a tenth target RF signal, and to send the ninth target RF signal and the tenth target RF signal to corresponding sub-amplifier units, respectively; The tenth sub-bridge is configured to divide the fourth divided RF signal into two to obtain an eleventh target RF signal and a twelfth target RF signal, and send the eleventh target RF signal and the twelfth target RF signal to corresponding sub-amplifier units, respectively.

9. The power amplifier with high standing wave resistance according to claim 8, characterized in that: The power synthesis end network includes a fifth-level bridge, a sixth-level bridge and a seventh-level bridge, the fifth-level bridge includes an eleventh sub-bridge, a twelfth sub-bridge, a thirteenth sub-bridge and a fourteenth sub-bridge, and the sixth-level bridge includes a fifteenth sub-bridge and a sixteenth sub-bridge; The input end of the eleventh sub-bridge, the input end of the twelfth sub-bridge, the input end of the thirteenth sub-bridge, and the input end of the fourteenth sub-bridge are respectively connected to the output ends of the corresponding sub-amplifier units, the output end of the eleventh sub-bridge is connected to the first input end of the fifteenth sub-bridge, the output end of the twelfth sub-bridge is connected to the second input end of the fifteenth sub-bridge, the output end of the thirteenth sub-bridge is connected to the first input end of the sixteenth sub-bridge, the output end of the fourteenth sub-bridge is connected to the second input end of the sixteenth sub-bridge, the output end of the fifteenth sub-bridge is connected to the first input end of the seventh-stage bridge, the output end of the sixteenth sub-bridge is connected to the second input end of the seventh-stage bridge, and the output end of the seventh-stage bridge is connected to the output end of the power amplifier; The eleventh sub-bridge is configured to integrate the fifth target radio frequency signal and the sixth target radio frequency signal after being amplified by a preset amplification factor to obtain a third integrated radio frequency signal, and send the third integrated radio frequency signal to the fifteenth sub-bridge; The twelfth sub-bridge is configured to integrate the seventh target radio frequency signal and the eighth target radio frequency signal after being amplified by a preset amplification factor to obtain a fourth integrated radio frequency signal, and send the fourth integrated radio frequency signal to the fifteenth sub-bridge; The thirteenth sub-bridge is configured to integrate the ninth target radio frequency signal and the tenth target radio frequency signal after being amplified by a preset amplification factor to obtain a fifth integrated radio frequency signal, and send the fifth integrated radio frequency signal to the sixteenth sub-bridge; The fourteenth sub-bridge is configured to integrate the eleventh target radio frequency signal and the twelfth target radio frequency signal after being amplified by a preset amplification factor to obtain a sixth integrated radio frequency signal, and send the sixth integrated radio frequency signal to the sixteenth sub-bridge; The fifteenth sub-bridge is configured to integrate the third integrated RF signal and the fourth integrated RF signal to obtain a seventh integrated RF signal, and send the seventh integrated RF signal to the seventh-stage bridge; the sixteenth sub-bridge is configured to integrate the fifth integrated RF signal and the sixth integrated RF signal to obtain an eighth integrated RF signal, and send the eighth integrated RF signal to the seventh-stage bridge; The seventh-stage bridge is used to integrate the seventh integrated radio frequency signal and the eighth integrated radio frequency signal to obtain the radio frequency signal with the target amplification factor.

10. The power amplifier with high standing wave resistance according to claim 9, characterized in that: The eleventh sub-bridge includes a seventh 90-degree bridge and a seventh absorption load, the twelfth sub-bridge includes an eighth 90-degree bridge and an eighth absorption load, the thirteenth sub-bridge includes a ninth 90-degree bridge and a ninth absorption load, the fourteenth sub-bridge includes a tenth 90-degree bridge and a tenth absorption load, the fifteenth sub-bridge includes an eleventh 90-degree bridge and an eleventh absorption load, the sixteenth sub-bridge includes a twelfth 90-degree bridge and a twelfth absorption load, and the seventh-level bridge includes a thirteenth 90-degree bridge and a thirteenth absorption load; The through-end and the coupling end of the seventh 90-degree bridge are both connected to the input end of the eleventh sub-bridge, the output end of the seventh 90-degree bridge is connected to the output end of the eleventh sub-bridge, the isolation end of the seventh 90-degree bridge is connected to the first end of the seventh absorption load, and the second end of the seventh absorption load is grounded; The coupling end and the through end of the eighth 90-degree bridge are both connected to the input end of the twelfth sub-bridge, the output end of the eighth 90-degree bridge is connected to the output end of the twelfth sub-bridge, the isolation end of the eighth 90-degree bridge is connected to the first end of the eighth absorption load, and the second end of the eighth absorption load is grounded; The through-end and the coupling end of the ninth 90-degree bridge are both connected to the input end of the thirteenth sub-bridge, the output end of the ninth 90-degree bridge is connected to the output end of the thirteenth sub-bridge, the isolation end of the ninth 90-degree bridge is connected to the first end of the ninth absorption load, and the second end of the ninth absorption load is grounded; The coupling end and the through end of the tenth 90-degree bridge are both connected to the input end of the fourteenth sub-bridge, the output end of the tenth 90-degree bridge is connected to the output end of the fourteenth sub-bridge, the isolation end of the tenth 90-degree bridge is connected to the first end of the tenth absorbing load, and the second end of the tenth absorbing load is grounded; The through end of the eleventh 90-degree bridge is connected to the first input end of the fifteenth sub-bridge, the coupling end of the eleventh 90-degree bridge is connected to the second input end of the fifteenth sub-bridge, the output end of the eleventh 90-degree bridge is connected to the output end of the fifteenth sub-bridge, the isolation end of the eleventh 90-degree bridge is connected to the first end of the eleventh absorption load, and the second end of the eleventh absorption load is grounded; The coupling end of the twelfth 90-degree bridge is connected to the first input end of the sixteenth sub-bridge, the through end of the twelfth 90-degree bridge is connected to the second input end of the sixteenth sub-bridge, the output end of the twelfth 90-degree bridge is connected to the output end of the sixteenth sub-bridge, the isolation end of the twelfth 90-degree bridge is connected to the first end of the twelfth absorption load, and the second end of the twelfth absorption load is grounded; The through end of the thirteenth 90-degree bridge is connected to the first input end of the seventh-level bridge, the coupling end of the thirteenth 90-degree bridge is connected to the second input end of the seventh-level bridge, the output end of the thirteenth 90-degree bridge is connected to the output end of the seventh-level bridge, the isolation end of the thirteenth 90-degree bridge is connected to the first end of the thirteenth absorption load, and the second end of the thirteenth absorption load is grounded.

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