Resistance test structure and calculation method thereof

Abstract

The embodiment of the invention provides a resistance test structure and a calculation method thereof, and the structure comprises a substrate which comprises a first region and a second region connected with the first region; the first region comprises a resistor to be measured; a first terminal; a second terminal; the number of the through hole plugs is (2n + 2), and n is a natural number larger than or equal to 1; one end of a to-be-tested resistor in the first area is coupled with the first terminal through (2n + 2) / 2 via hole plugs connected in parallel, and the other end of the to-be-tested resistor in the first area is coupled with the second terminal through (2n + 2) / 2 via hole plugs connected in parallel; the second region comprises (2n + 2) / 2 resistors to be measured, and the resistors to be measured are connected in parallel; a third terminal; one end of each resistor to be measured in the second region is coupled with the third terminal through one via plug, and the other end of each resistor to be measured in the second region is coupled with the first terminal through one via plug. By adopting the resistance test structure, the accuracy of a resistance test result can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a resistance testing structure and a calculation method thereof. Background Art

[0002] In semiconductor manufacturing, a test key (TSK) is a structure used to analyze semiconductor device performance and parameter compliance. By testing the electrical parameters of specific test structures on the wafer, the quality and stability of the semiconductor manufacturing process can be assessed. Resistors are a crucial component of circuit design, and the current semiconductor industry typically uses resistor strip patterns to test resistors.

[0003] However, the existing testing technology has the problem of reduced accuracy of resistance test results. Therefore, how to provide a technical solution to improve the accuracy of resistance test results has become a technical problem that technical personnel in this field urgently need to solve. Summary of the Invention

[0004] The technical problem solved by the present invention is to improve the accuracy of resistance test results by providing a resistance test structure and a calculation method thereof.

[0005] To solve the above problems, an embodiment of the present invention provides a resistance testing structure, comprising: a substrate including a first region and a second region connected to the first region; the first region including: a resistor to be measured; a first terminal; a second terminal; and (2n+2) via plugs, wherein n is a natural number greater than or equal to 1; one end of the resistor to be measured in the first region is coupled to the first terminal through (2n+2) / 2 via plugs connected in parallel, and the other end of the resistor to be measured in the first region is coupled to the second terminal through (2n+2) / 2 via plugs connected in parallel; the second region including: (2n+2) / 2 resistors to be measured, and the resistors to be measured are connected in parallel; a third terminal; one end of each resistor to be measured in the second region is coupled to the third terminal through a via plug, and the other end of each resistor to be measured in the second region is coupled to the first terminal through a via plug.

[0006] Optionally, the resistance testing structure further includes: a third area connected to the first area; the third area includes: (2n+2) / 2 resistors to be tested, and each resistor to be tested is connected in parallel; a fourth terminal; one end of each resistor to be tested in the third area is coupled to the second terminal through (2n+2) / 2 parallel via plugs, and the other end of each resistor to be tested in the third area is coupled to the fourth terminal through (2n+2) / 2 parallel via plugs.

[0007] Optionally, the via plugs in each region have the same shape and size.

[0008] Optionally, the material of the resistor to be measured in each region includes: one or more of: doped N-type semiconductor material, doped P-type semiconductor material and metal material.

[0009] Optionally, the materials of the first terminal, the second terminal, the third terminal and the fourth terminal are the same; the lengths and widths of the first terminal, the second terminal, the third terminal and the fourth terminal are the same; the thicknesses of the materials of the first terminal, the second terminal, the third terminal and the fourth terminal are the same; the material of the via plug includes any one of the following: the material of the via plug is consistent with the material of the resistor to be measured; the material of the via plug is consistent with the material of each terminal.

[0010] Optionally, an overlapping area between one end of a resistor to be measured in the first zone and the first terminal is equal to an overlapping area between the other end of a resistor to be measured in the first zone and the second terminal; an overlapping area between one end of each resistor to be measured in the second zone and the third terminal is equal to an overlapping area between the other end of each resistor to be measured in the second zone and the first terminal, and is also equal to an overlapping area between one end of a resistor to be measured in the first zone and the first terminal.

[0011] Optionally, the overlapping area between one end of each resistor to be measured in the third zone and the second terminal is equal to the overlapping area between the other end of each resistor to be measured in the third zone and the fourth terminal, and is also equal to the overlapping area between one end of a resistor to be measured in the first zone and the first terminal.

[0012] Accordingly, an embodiment of the present invention further provides a calculation method for a resistance test structure, which is applied to any of the above-mentioned resistance test structures, including: providing a first terminal and a second terminal test signal to obtain the total resistance R of the first area. s1 Provide the first terminal and the third terminal test signal to obtain the total resistance R of the second area s2 According to the total resistance R of the first region s1 And the total resistance of the second area R s2 , the resistance R1 of the resistor to be measured is obtained; the total resistance of the first area R s1 , including: a first region parasitic resistance, a first region contact resistance and a resistance of a resistor to be measured; the first region parasitic resistance includes at least: a first terminal resistance and a second terminal resistance; the first region contact resistance includes: a contact resistance between (2n+2) / 2 parallel-connected via plugs at one end of the first region one resistor to be measured and the first region one resistor to be measured, and a contact resistance between (2n+2) / 2 parallel-connected via plugs at the other end of the first region one resistor to be measured and the first region one resistor to be measured; the second region total resistance R s2, including: the parasitic resistance of the second region, the contact resistance of the second region and the total resistance of (2n+2) / 2 resistors to be measured in the second region; the parasitic resistance of the second region includes at least: the first terminal resistance and the third terminal resistance; the contact resistance of the second region includes: the contact resistance between a via plug at one end of each resistor to be measured in the second region and the resistor to be measured, and the contact resistance between a via plug at the other end of each resistor to be measured in the second region and the resistor to be measured.

[0013] Optionally, the calculation method further includes: providing a second terminal and a fourth terminal test signal to obtain the total resistance R of the third region s3 According to the total resistance R of the first region s1 And the total resistance of the third zone R s3 , get the parasitic resistance of the third region; according to the total resistance of the second region R s2 And the total resistance of the third zone R s3 , the contact resistance of the third region is obtained; the total resistance of the third region R s3 , including: a parasitic resistance in the third region, a contact resistance in the third region, and a total resistance of (2n+2) / 2 resistors to be measured in the third region; the parasitic resistance in the third region includes at least: a second terminal resistance and a fourth terminal resistance; the contact resistance in the third region includes: a contact resistance between (2n+2) / 2 parallel-connected via plugs at one end of each resistor to be measured in the third region and the resistor to be measured, and a contact resistance between (2n+2) / 2 parallel-connected via plugs at the other end of each resistor to be measured in the third region and the resistor to be measured.

[0014] Optionally, the parasitic resistance of the first region is equal to the parasitic resistance of the second region, the parasitic resistance of the second region is equal to the parasitic resistance of the third region, and the parasitic resistance of the third region is equal to the parasitic resistance R of each region. O The contact resistance of each via plug in the first, second and third regions is R C , the contact resistance of the third zone is also R C ; Use the following formula: R1=((n+1) / n)*(R s1 -R s2 ), n is a natural number greater than or equal to 1, according to the total resistance R of the first region s1 、The total resistance of the second area R s2 , the resistance to be measured is obtained as R1; using the following formula: R C =((n+1) 2 / 2n)*(R s2 -R s3 ), n is a natural number greater than or equal to 1, according to the total resistance R s2 、Total resistance of the third zone R s3 , the via plug contact resistance RC ; Use the following formula: R O =((n+1)*R s3 -R s1 ) / n, n is a natural number greater than or equal to 1, according to the total resistance R s1 、Total resistance of the third zone R s3 , the parasitic resistance R of each area is obtained O .

[0015] Optionally, the total resistance R of the first zone is measured by a resistance tester. s1 、The total resistance of the second area R s2 And the total resistance of the third zone R s3 .

[0016] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0017] An embodiment of the present invention provides a resistance testing structure, comprising: a substrate, comprising a first area and a second area; the first area comprising: a resistor to be measured, a first terminal, a second terminal, and a via plug, wherein the first terminal is connected to one end of the resistor to be measured through the via plug, and the second terminal is connected to the other end of the resistor to be measured in the first area through the via plug; the second area comprises: (2n+2) / 2 resistors to be measured, a third terminal, wherein the third terminal is connected to one end of each resistor to be measured in the third area through the via plug, and the first terminal is connected to the other end of each resistor to be measured in the third area through the via plug; test signals are provided to the first and second terminals to obtain the total resistance of the first area, and test signals are provided to the first and third terminals to obtain the total resistance of the second area. Based on the total resistance of the first area and the total resistance of the second area, the actual resistance value of the resistor to be measured can be obtained, thereby improving the accuracy of the resistance test results. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings in the following description are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0019] Figure 1 It is a schematic diagram of a resistance test structure;

[0020] Figures 2 to 3 is a schematic top view of a resistance test structure according to an embodiment of the present application;

[0021] Figures 4 to 8 This is a schematic diagram of a method for forming a resistance test structure according to an embodiment of the present application;

[0022] Figure 9 1 is a flow chart of a calculation method corresponding to the resistance test structure of an embodiment of the present application;

[0023] Figures 10 to 12 This is a schematic diagram of the circuit structure corresponding to each area of the resistance test structure of the embodiment of the present application. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] As can be seen from the background technology, the existing detection technology has the problem of reduced accuracy of resistance test results. The specific reasons are as follows:

[0026] refer to Figure 1 , is a schematic diagram of a resistance testing structure, the resistance testing structure comprising: a first test terminal 100, a second test terminal 101, and a resistor to be tested 103 located between the first test terminal 100 and the second test terminal 101, one end of the resistor to be tested 103 is coupled to the first test terminal 100 through a via 102a, and the other end of the resistor to be tested 103 is coupled to the second test terminal 101 through a via 102b, and a test signal is applied to the first test terminal 100 and the second test terminal 101 to test the resistance of the resistor to be tested 103; the length of the resistor to be tested 103 is L, which is equal to the distance between the edges of the first test terminal 100 and the second test terminal 101, and the width of the resistor to be tested 103 is W.

[0027] However, the actual test results in the resistance value of the resistor 103 to be tested, including the resistance of the first test terminal 100, the resistance of the second test terminal 101, the contact resistance at the via 102a, the contact resistance at the via 102b and the resistance of the test equipment, which may reduce the accuracy of the resistance test results.

[0028] In order to solve the technical problem, an embodiment of the present invention provides a resistance testing structure, which includes: a substrate including a first area and a second area connected to the first area; the first area includes: a resistor to be measured; a first terminal; a second terminal; and (2n+2) via plugs, where n is a natural number greater than or equal to 1; one end of the resistor to be measured in the first area is coupled to the first terminal through (2n+2) / 2 via plugs connected in parallel, and the other end of the resistor to be measured in the first area is coupled to the second terminal through (2n+2) / 2 via plugs connected in parallel; the second area includes: (2n+2) / 2 resistors to be measured, and the resistors to be measured are connected in parallel; a third terminal; one end of each resistor to be measured in the second area is coupled to the third terminal through a via plug, and the other end of each resistor to be measured in the second area is coupled to the first terminal through a via plug.

[0029] By adopting the above-mentioned resistance testing structure, providing the first terminal and the second terminal test signals to obtain the total resistance of the first area, and providing the first terminal and the third terminal test signals to obtain the total resistance of the second area, the actual resistance value of the resistor to be measured can be obtained based on the total resistance of the first area and the total resistance of the second area, thereby improving the accuracy of the resistance test results.

[0030] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is apparent that the described embodiments are only a portion of the embodiments of the present invention, not all of them. The following embodiments and features thereof may be combined with each other unless there is a conflict.

[0031] Figures 2 to 3 It is a schematic top view of the resistance test structure of an embodiment of the present application.

[0032] refer to Figure 2 The resistance testing structure includes: a substrate 200.

[0033] The substrate 200 is used to provide a process platform for forming a resistance test structure.

[0034] In this embodiment, the substrate 200 is a silicon substrate 200, and the material of the substrate 200 is single crystal silicon. In other embodiments, the material of the substrate 200 can also be one or more of germanium, silicon germanium, silicon carbide, gallium nitride, gallium arsenide, and indium gallium. The substrate 200 can also be a silicon-on-insulator substrate 200 or a germanium-on-insulator substrate 200, or other types of substrates 200. In other embodiments, an epitaxial layer (not shown) having the same crystal structure as the substrate 200 can be formed on the surface of the substrate 200 to improve pattern transfer quality.

[0035] The substrate 200 includes a first region 200a, a second region 200b connected to the first region 200a, and a third region 200c connected to the first region 200a.

[0036] The first area 200 a is used to provide a process space for forming the resistor to be measured 203 , the first terminal 201 a , and the second terminal 201 b in the first area 200 a .

[0037] The second area 200 b is used to provide a process space for forming the resistor to be measured 203 and the third terminal 201 c in the second area 200 b .

[0038] The third region 200 c is used to provide a process space for forming the resistor to be measured 203 and the fourth terminal 201 d in the third region 200 c .

[0039] Continue to refer Figure 2 The first area 200a includes: a resistor to be measured 203, a first terminal 201a, a second terminal 201b, and a via plug 202.

[0040] In this embodiment, the number of the resistor to be measured 203 in the first area 200 a is one, that is, one resistor to be measured 203 , but this is not intended to limit the present application.

[0041] The first terminal 201a and the second terminal 201b are used to provide a test signal to a resistor to be measured 203 in the first zone 200a to test the total resistance of the first zone. In this embodiment, the number of the first terminal 201a is 1 and the number of the second terminal 201b is 1, but this does not limit the present application.

[0042] The via plug 202 in the first region 200 a is used to electrically connect a resistor to be measured 203 in the first region 200 a to the first terminal 201 a and the second terminal 201 b .

[0043] In this embodiment, the number of the via plugs 202 in the first area 200a is (2n+2), where n is a natural number greater than or equal to 1; one end 208a of the resistor to be measured in the first area (such as Figure 8 As shown), the first terminal 201a is coupled to the other end 208b of the resistor to be measured in the first region (as shown) through (2n+2) / 2 parallel connected via plugs 202. Figure 8 As shown), it is coupled to the second terminal 201b through (2n+2) / 2 via plugs 202 connected in parallel; the value of n is selected according to actual needs.

[0044] Continue to refer Figure 2The first zone via plug range 204a contains (2n+2) / 2 parallel via plugs 202, and the first zone via plug range 204b contains (2n+2) / 2 parallel via plugs 202. For the sake of simplicity and clarity of the drawings, the first zone 200a only shows 4 via plugs 202.

[0045] For example, if n is a natural number of 1, the total number of via plugs 202 in the first area 200a is 4, wherein one end 208a of the resistor to be measured in the first area is coupled to the first terminal 201a through two via plugs 202 connected in parallel, and the other end 208b of the resistor to be measured in the first area is coupled to the second terminal 201b through two via plugs 202 connected in parallel.

[0046] For example, if n is a natural number 3, the total number of via plugs 202 in the first area 200a is 8, wherein one end 208a of the resistor to be measured in the first area is coupled to the first terminal 201a through four via plugs 202 connected in parallel, and the other end 208b of the resistor to be measured in the first area is coupled to the second terminal 201b through four via plugs 202 connected in parallel.

[0047] Continue to refer Figure 2 The second area 200b includes: (2n+2) / 2 resistors to be tested 203, a third terminal 201c, and a via plug 202.

[0048] In this embodiment, the second area 200 b is provided with (2n+2) / 2 resistors to be measured 203 , and the resistors to be measured 203 are connected in parallel.

[0049] The third terminal 201c and the first terminal 201a are used to provide test signals to the (2n+2) / 2 resistors to be tested 203 in the second area 200b to test the total resistance of the second area; the value of n is selected according to actual needs.

[0050] In this embodiment, the number of the third terminal 201c is one, but this is not intended to limit the present application.

[0051] In this embodiment, one end 209a of each resistor to be measured in the second area (such as Figure 8 ), coupled to the third terminal 201c through a via plug 202, and the other end 209b of each resistor to be measured in the second area (as shown) Figure 8 As shown), it is coupled to the first terminal 201a through a via plug 202.

[0052] Continue to refer Figure 2The second region of resistance range 205 includes (2n+2) / 2 resistors 203 to be tested. For the sake of clarity, the second region 200b only shows two resistors 203 to be tested. The second region of resistance range 205 includes a second region of resistance range 205a and a second region of resistance range 205b.

[0053] For example: if n is a natural number 1, the number of the resistors to be measured 203 in the second area 200b is 2, wherein one end 209a of each resistor to be measured in the second area is coupled to the third terminal 201c through a via plug 202, and the other end 209b of each resistor to be measured in the second area is coupled to the first terminal 201a through a via plug 202.

[0054] Continue to refer Figure 2 The third area 200 c includes: (2n+2) / 2 resistors to be measured 203 , a fourth terminal 201 d , and a via plug 202 .

[0055] In this embodiment, the third area 200 c is provided with (2n+2) / 2 resistors to be measured 203 , and the resistors to be measured 203 are connected in parallel.

[0056] The fourth terminal 201d and the second terminal 201b are used to provide test signals to the (2n+2) / 2 resistors to be tested 203 in the third area 200c to test the total resistance of the third area; the value of n is selected according to actual needs.

[0057] The via plugs 202 in the third region 200 c are used to electrically connect the (2n+2) / 2 resistors to be measured 203 in the third region 200 c to the fourth terminal 201 d and the second terminal 201 b .

[0058] In this embodiment, one end 210a of each resistor to be measured in the third area (such as Figure 8 As shown), the second terminal 201b is coupled to the second terminal 201b through (2n+2) / 2 parallel connected via plugs 202, and the other end 210b of each resistor to be measured in the third area (as shown) Figure 8 As shown), it is coupled to the fourth terminal 201d through (2n+2) / 2 parallel via plugs 202.

[0059] Continue to refer Figure 2 The third region of the resistance range 206 includes (2n+2) / 2 resistances 203 to be tested, and the third region of the via plug range 206a includes (n+1) 2 The third region via plug area 206b contains (n+1) 2For the sake of simplicity and clarity, the third area 200 c only shows a total of 8 via plugs 202 and 2 resistors to be tested 203 .

[0060] For example, if n is a natural number 1, the number of the resistors to be measured 203 in the third area 200c is 2, wherein one end 210a of each resistor to be measured in the third area is coupled to the second terminal 201b through two via plugs 202, and the other end 210b of each resistor to be measured in the third area is coupled to the fourth terminal 201d through two via plugs 202.

[0061] The material of the resistor to be measured 203 in each area includes: one or more of doped N-type semiconductor material, doped P-type semiconductor material and metal material, that is, the material of the resistor to be measured 203 in the first area 200a includes: one or more of doped N-type semiconductor material, doped P-type semiconductor material and metal material; the material of the (2n+2) / 2 resistors to be measured 203 in the second area 200b includes: one or more of doped N-type semiconductor material, doped P-type semiconductor material and metal material; the material of the (2n+2) / 2 resistors to be measured 203 in the third area 200c includes: one or more of doped N-type semiconductor material, doped P-type semiconductor material and metal material. One or more of doped P-type semiconductor materials and metal materials; in some embodiments, the materials of the resistor to be measured 203 in the first area 200a, the (2n+2) / 2 resistors to be measured 203 in the second area 200b, and the (2n+2) / 2 resistors to be measured 203 in the third area 200c are all doped P-type semiconductor materials, or can also be all heavily doped P-type semiconductor materials; in other embodiments, the materials of the resistor to be measured 203 in the first area 200a, the (2n+2) / 2 resistors to be measured 203 in the second area 200b, and the (2n+2) / 2 resistors to be measured 203 in the third area 200c are all the same metal material.

[0062] In this embodiment, the materials of the resistor to be tested 203 in the first area 200a, the (2n+2) / 2 resistors to be tested 203 in the second area 200b, and the (2n+2) / 2 resistors to be tested 203 in the third area 200c are the same, all of which are doped N-type semiconductor materials, and can also be heavily doped N-type semiconductor materials.

[0063] In this embodiment, the first terminal 201 a , the second terminal 201 b , the third terminal 201 c and the fourth terminal 201 d are made of the same material to improve the accuracy of the resistance test result.

[0064] Continue to refer Figure 2, the lengths and widths of the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 201d are all the same, that is, the lengths of the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 201d all extend parallel to the X direction, and the lengths of the terminals are the same, and the widths of the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 201d all extend parallel to the Y direction, and the widths of the terminals are the same; the X direction is the first direction, the Y direction is the second direction, and the first direction and the second direction are perpendicular to each other.

[0065] In this embodiment, the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 201d are all of the same shape and size, and are all rectangular parallelepipeds. Each of these rectangular parallelepipeds has six faces, and the opposite faces among these faces are completely equal to improve the accuracy of the resistance test results.

[0066] In this embodiment, the thickness of the materials of the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 201d is the same, so as to improve the accuracy of the resistance test result.

[0067] The material of the via plug 202 includes any one of the following: the material of the via plug 202 is consistent with the material of the resistor to be measured 203; the material of the via plug 202 is consistent with the material of each terminal; in this embodiment, the material of the via plug 202 is consistent with the material of each terminal, that is, the materials of each via plug 202 in each area, the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 201d are all the same.

[0068] It should be noted that when the material of the via plug 202 is consistent with the material of the resistor to be measured 203, in the process of forming the resistance test structure, the terminals of each area are formed first, and then the via holes of each area are formed, and then the resistor to be measured 203 of each area is formed, and the material of the resistor to be measured 203 of each area fills the via holes of each area; when the material of the via plug 202 is consistent with the material of each terminal, in the process of forming the resistance test structure, the resistor to be measured 203 of each area is formed first, and then the via holes 202a of each area are formed (such as Figure 7 As shown), terminals of each region are then formed, and the material of the terminals of each region fills the via holes 202a of each region.

[0069] In this embodiment, along the direction perpendicular to the surface of the substrate 200 , the thicknesses of the first region 200 a (one resistor 203 to be tested), the second region 200 b (2n+2) / 2 resistors 203 to be tested), and the third region 200 c (2n+2) / 2 resistors 203 to be tested are all the same.

[0070] In this embodiment, the first area 200a (one resistor to be tested 203), the second area 200b (2n+2) / 2 resistors to be tested 203), and the third area 200c (2n+2) / 2 resistors to be tested 203 are all of the same shape and size, and are all rectangular parallelepipeds. Each of these rectangular parallelepipeds has six faces, and the opposite faces among these faces are completely equal. That is, the long edge of each rectangular parallelepiped extends parallel to the X direction, and the wide edge of each rectangular parallelepiped extends parallel to the Y direction, so as to improve the accuracy of the resistance test results.

[0071] like Figure 3 , which is a top view of a resistor to be measured 203 , wherein the length of the resistor to be measured parallel to the X direction is L, and the width of the resistor to be measured parallel to the Y direction is W.

[0072] The via plugs in each area have the same shape and size, that is, each via plug 202 in each area has the same shape and size. In this embodiment, each via plug 202 in the first area 200a, each via plug 202 in the second area 200b, and each via plug 202 in the third area 200c have the same shape and size; each via plug 202 in each area is a cube.

[0073] To facilitate understanding of the resistance test structure of this embodiment, n is taken as a natural number of 1. Then, the first area 200a includes: a resistor to be tested 203, four via plugs 202, a first terminal 201a, and a second terminal 201b; the second area 200b includes: two resistors to be tested 203, four via plugs 202, and a third terminal 201c; the third area 200c includes: two resistors to be tested 203, eight via plugs 202, and a fourth terminal 201d.

[0074] Continue to refer Figure 2 In this embodiment, the main steps of forming the resistors to be tested 203 in the first area 200a, all the resistors to be tested 203 in the second area 200b, and all the resistors to be tested 203 in the third area 200c, as well as the vias 202a, terminals, and via plugs 202 in each area in the same process step include:

[0075] refer to Figures 4 to 8 , is a schematic diagram of a method for forming a resistance test structure according to an embodiment of the present application.

[0076] It should be noted that the Figures 4 to 8 for Figure 2 Schematic diagram of a method for forming a resistance test structure along the dotted line A1A2.

[0077] An active region (not shown) is formed by doping on the substrate 200 .

[0078] In the active area of each region, N-type semiconductor material is heavily doped according to the same doping process parameters, that is, a resistor to be tested 203 is formed in the first region 200a, a resistor to be tested 203 is formed in the second region 200b, and a resistor to be tested 203 is formed in the third region 200c.

[0079] An isolation trench 202b is formed on the substrate 200. The isolation trench 202b is located between the resistor to be measured 203 in the first area 200a and the resistor to be measured 203 in the second area 200b. The isolation trench 202b is also located between the resistor to be measured 203 in the first area 200a and the resistor to be measured 203 in the third area 200c. The isolation trench 202b can also be located at other positions on the substrate 200 as shown, which can be selected according to actual needs.

[0080] An isolation dielectric layer 202c is formed on the substrate 200. The isolation dielectric layer 202c fills the isolation trench 202b and covers the surfaces of the resistor 203 to be tested in the first area 200a, the resistor 203 to be tested in the second area 200b, and the resistor 203 to be tested in the third area 200c. The isolation dielectric layer 202c is used to reduce the probability of scratching the resistor 203 to be tested during the resistance testing process, thereby improving the accuracy of the resistance test results.

[0081] In the same etching process, (2n+2) / 2 vias 202a are formed at one end 208a of a resistor to be measured in the first area, and (2n+2) / 2 vias 202a are formed at the other end 208b of a resistor to be measured in the first area; one via 202a is formed at one end 209a of each resistor to be measured in the second area, and one via 202a is formed at the other end 209b of each resistor to be measured in the second area; and (2n+2) / 2 vias 202a are formed at one end 210a of each resistor to be measured in the third area, and (2n+2) / 2 vias 202a are formed at the other end 210b of each resistor to be measured in the third area.

[0082] In the same process step, a first terminal 201a, a second terminal 201b, and a third terminal 201c are formed; the first terminal 201a is filled in each via hole 202a at one end 208a of a resistor to be measured in the first area, and the first terminal 201a is also filled in each via hole 202a at the other end 209b of each resistor to be measured in the second area, so as to form a via plug 202 in the corresponding via hole 202a; the second terminal 201b is filled in each via hole 202a at the other end 208b of a resistor to be measured in the first area, and the third terminal 201c is filled in each via hole 202a at the other end 209b of each resistor to be measured in the second area. The second terminal 201b is also filled in each via hole 202a at one end 210a of each resistor to be measured in the third area to form a via plug 202 in the corresponding via hole 202a; the third terminal 201c is filled in each via hole 202a at one end 209a of each resistor to be measured in the second area to form a via plug 202 in the corresponding via hole 202a; the fourth terminal 201d is filled in each via hole 202a at the other end 210b of each resistor to be measured in the third area to form a via plug 202 in the corresponding via hole 202a.

[0083] It should be noted that, in some embodiments, the substrate 200 does not form an active region, and the resistors to be measured 203 in each region are directly formed by heavily doping on the substrate 200 .

[0084] It should be noted that the structure of the resistor to be measured 203 can be a single layer of semiconductor material or multiple layers of stacked contact or non-contact semiconductor material. Those skilled in the art can set the structure of the resistor to be measured 203 according to actual needs, and this does not limit the present application.

[0085] In this embodiment, the distance between the center of each via 202a in the first-zone via plug range 204a and one end 208a of a resistor to be measured in the first zone is equal to the distance between the center of each via 202a in the first-zone via plug range 204b and the other end 208b of the resistor to be measured in the first zone. The distance between the center of each via 202a in the second-zone resistor to be measured range 205a and one end 209a of each resistor to be measured in the second zone is equal to the distance between the center of each via 202a in the second-zone resistor to be measured range 205b and the other end 209b of each resistor to be measured in the second zone. The distance between the center of each via 202a in the third-zone via plug range 206a and one end 210a of each resistor to be measured in the third zone is equal to the distance between the center of each via 202a in the third-zone via plug range 206b and the other end 210b of each resistor to be measured in the third zone. These distances are all equal, thereby improving the accuracy of resistance test results.

[0086] In this embodiment, the overlapping area between one end 208a of a resistor to be measured in the first zone and the first terminal 201a is equal to the overlapping area between the other end 208b of the resistor to be measured in the first zone and the second terminal 201b; the overlapping area between one end 209a of each resistor to be measured in the second zone and the third terminal 201c is equal to the overlapping area between the other end 209b of each resistor to be measured in the second zone and the first terminal 201a, and is also equal to the overlapping area between one end 208a of a resistor to be measured in the first zone and the first terminal 201a; the overlapping area between one end 210a of each resistor to be measured in the third zone and the second terminal 201b is equal to the overlapping area between the other end 210b of each resistor to be measured in the third zone and the fourth terminal 201d, and is also equal to the overlapping area between one end 208a of a resistor to be measured in the first zone and the first terminal 201a, thereby improving the accuracy of the resistance test results.

[0087] It should be noted that the contact resistance between the via plug 202 and the resistor to be measured 203 at each via hole 202 a in each region is equal, so as to improve the accuracy of the resistance test result.

[0088] It should be noted that if Figure 2 As shown, the first terminal 201a, the second terminal 201b, the third terminal 201c and the fourth terminal 210d are all made of semiconductor or metal materials with a certain transmittance (such as semi-transparent), so they can display the via holes in each area and one end and the other end of each resistor to be measured in each area.

[0089] It should be noted that a portion of the first terminal 201a of the first area 200a is located in the second area 200b, and a portion of the first terminal 201a of the first area 200a is located in the third area 200c, but this is not intended to limit the present application.

[0090] like Figure 2 As shown, along the downward direction parallel to the Y direction (the second direction downward), the resistors to be measured in the second zone 200b are numbered from 1 to (2n+2) / 2, namely: the first resistor to be measured 203 in the second zone, the second resistor to be measured 203 in the second zone, the third resistor to be measured 203 in the second zone, ..., the (2n+2) / 2 resistor to be measured 203 in the second zone; along the downward direction parallel to the Y direction (the second direction downward), the resistors to be measured in the third zone 200c are numbered from 1 to (2n+2) / 2, respectively: the first resistor to be measured 203 in the third zone, the second resistor to be measured 203 in the third zone, the third resistor to be measured 203 in the third zone, ..., the (2n+2) / 2 resistor to be measured 203 in the third zone. For the sake of simplicity and clarity, Figure 2 The numbers of the resistors to be measured in each zone are not shown.

[0091] In this embodiment, along the direction parallel to the X, the longer sides of the first resistor to be tested 203 in the first area, the first resistor to be tested 203 in the second area, and the first resistor to be tested 203 in the third area are located on the same straight line (UP end), and along the direction parallel to the X, the longer sides of the (2n+2) / 2nd resistor to be tested 203 in the second area and the (2n+2) / 2nd resistor to be tested 203 in the third area are located on the same straight line (DOWN end), so as to improve the accuracy of the resistance test results.

[0092] Alternatively, along the direction parallel to the X-direction, the longer sides (UP ends) of the first resistor to be tested 203 in the second area and the longer sides (DOWN ends) of the first resistor to be tested 203 in the third area are located on the same straight line, and along the direction parallel to the X-direction, the longer sides (DOWN ends) of the first resistor to be tested 203 in the first area, the (2n+2) / 2nd resistor to be tested 203 in the second area, and the longer sides (DOWN ends) of the (2n+2) / 2nd resistor to be tested 203 in the third area are located on the same straight line, so as to improve the accuracy of the resistance test results.

[0093] It should be noted that, along the Y direction, the resistors to be measured in the second area 200b are arranged at equal intervals, and the resistors to be measured in the third area 200c are arranged at equal intervals. This is not intended to limit the present application, and those skilled in the art can set the spacing between the resistors to be measured according to actual needs.

[0094] In order to solve the technical problem, the present application also provides a calculation method for a resistance test structure, which is applied to any of the aforementioned resistance test structures.

[0095] Figure 9 It is a flow chart of the calculation method corresponding to the resistance test structure of the embodiment of the present application.

[0096] The calculation method of the resistance test structure includes: providing a first terminal 201a and a second terminal 201b test signal to obtain the total resistance R of the first area s1 Provide the first terminal 201a and the third terminal 201c test signal to obtain the total resistance R of the second area s2 According to the total resistance R of the first region s1 And the total resistance of the second area R s2 , the resistance R1 of the resistor to be measured 203 is obtained; the total resistance R of the first region s1, including: a first region parasitic resistance, a first region contact resistance and a resistance of a resistor to be measured 203; the first region parasitic resistance includes at least: a first terminal resistance and a second terminal resistance; the first region contact resistance includes: a contact resistance between (2n+2) / 2 parallel-connected via plugs at one end of the first region one resistor to be measured and the first region one resistor to be measured, and a contact resistance between (2n+2) / 2 parallel-connected via plugs at the other end of the first region one resistor to be measured and the first region one resistor to be measured; the second region total resistance R s2 , including: the parasitic resistance of the second area, the contact resistance of the second area and the total resistance of (2n+2) / 2 resistors to be measured 203 in the second area 200b; the parasitic resistance of the second area includes at least: the first terminal resistance and the third terminal resistance; the contact resistance of the second area includes: the contact resistance between a via plug at one end of each resistor to be measured in the second area and the resistor to be measured, and the contact resistance between a via plug at the other end of each resistor to be measured in the second area and the resistor to be measured.

[0097] refer to Figures 9 to 12 , combined with Figures 2 to 8 ,in, Figures 10 to 12 This is a schematic diagram of the circuit structure corresponding to each area of the resistance test structure of the embodiment of the present application. Figure 10 correspond Figure 2 The circuit structure diagram of the first zone in the figure is as follows: Figure 11 correspond Figure 2 The circuit structure diagram of the second zone in the figure is as follows: Figure 12 correspond Figure 2 Schematic diagram of the circuit structure of the third area; the calculation method of the resistance test structure, the main steps include:

[0098] Step S11: providing a first terminal and a second terminal test signal to obtain the total resistance R of the first region s1 .

[0099] In this embodiment, the total resistance R of the first zone is measured by a resistance tester. s1 .

[0100] The resistance tester includes one or more of a multimeter, an ohmmeter, and a four-probe resistance meter. In this embodiment, a multimeter is used to test the total resistance R of the first zone. s1 .

[0101] The multimeter includes a first test lead and a second test lead, wherein the first test lead is in electrical contact with the first terminal 201a, and the second test lead is in electrical contact with the second terminal 201b, to obtain the total resistance R of the first area. s1 In this embodiment, Figure 2As shown, the first test lead is in contact with position D5 on the first terminal 201a, and the second test lead is in contact with position D6 on the second terminal 201b to test the total resistance R of the first zone. s1 .

[0102] In this embodiment, the total resistance of the first region R s1 , including: the first area parasitic resistance R O1 , first zone contact resistance R C1 And the resistance value R1 of the resistor to be measured.

[0103] The parasitic resistance R O1 At least includes: a first terminal resistor and a second terminal resistor; in this embodiment, the first region parasitic resistor R O1 Including: a first terminal resistor and a second terminal resistor; in other embodiments, the first region parasitic resistor R O1 It also includes: a resistor of the resistance tester itself; the first terminal resistor is connected in series with the second terminal resistor, and the second terminal resistor is connected in series with the resistor of the resistance tester itself.

[0104] Continue to refer Figure 2 , combined with Figure 8 and Figure 10 The first terminal resistance refers to the resistance of the first terminal 201a between the position D5 where the first test lead contacts the first terminal 201a and the end 208a of the resistor to be measured in the first zone, i.e., the first terminal resistance R d11 The second terminal resistance refers to the resistance of the second terminal 201b between the position D6 where the second test lead contacts the second terminal 201b and the other end 208b of the resistor to be measured in the first zone, i.e., the second terminal resistance R d12 .

[0105] In this embodiment, the parasitic resistance of the first region is R O1 , is the first terminal resistance R d11 and the second terminal resistance R d12 The sum of the resistance values after series connection is:

[0106] R O1 =R d11 +R d12

[0107] The first region contact resistance R C1 The contact resistance (i.e., the first terminal contact resistance R) between (2n+2) / 2 parallel-connected via plugs at one end 208a of the first region and the first region and the first region to be measured resistor is included. C11 ,like Figure 10The resistance in the dotted box 300 in the middle), and the contact resistance between the (2n+2) / 2 parallel-connected via plugs at the other end 208b of the first region-to-be-tested resistor and the first region-to-be-tested resistor (i.e., the second terminal contact resistance R C12 ,like Figure 10 The resistance in the dotted box 301), that is, the first region contact resistance R C1 is the first terminal contact resistance R C11 Contact resistance R with the second terminal C12 The sum of R C1 =R C11 +R C12 , as follows:

[0108] R C1 =R C11 +R C12

[0109] =R C / (n+1)+R C / (n+1)

[0110] =2R C / (n+1)

[0111] In this embodiment, the total resistance of the first region R s1 , is the parasitic resistance R of the first region O1 (R O1 =R O ) The first zone contact resistance R C1 , the first zone contact resistance R C1 A resistor R1 to be tested 203 is connected in series, that is, the parasitic resistance R O1 , first zone contact resistance R C1 The first region has a total resistance R1 and a resistance to be measured 203 in series. s1 The calculation formula is as follows:

[0112] R s1 =R1+(2R C / (n+1))+R O ……(1)

[0113] It should be noted that the contact resistance at each via 202a in the first region 200a is equal, that is, the contact resistance of a single via plug is R C , the single via plug contact resistance R C It is the resistance generated when the via plug (ie, the terminal material layer) at the single via hole 202 a contacts the material of the resistor to be measured 203 .

[0114] Step S12: Provide test signals for the first terminal and the third terminal to obtain the total resistance R of the second region s2 .

[0115] In this embodiment, the total resistance R of the second zone is measured by a resistance tester. s2 .

[0116] The resistance tester includes one or more of a multimeter, an ohmmeter and a four-probe resistance meter. In this embodiment, a multimeter is used to test the total resistance R of the second zone. s2 .

[0117] The multimeter includes a first test lead and a second test lead, wherein the first test lead is electrically connected to the first terminal 201a, and the second test lead is electrically connected to the third terminal 201c, to obtain the total resistance R of the second area. s2 In this embodiment, Figure 2 As shown, the first test lead is in contact with position D4 on the first terminal 201a, and the second test lead is in contact with position D1 on the third terminal 201c to test the total resistance R of the second area. s2 In some embodiments, the first test lead is in contact with position D4 on the first terminal 201a, and the second test lead is in contact with position D2 on the third terminal 201c to test the total resistance R of the second zone. s2 Or, the first test lead is in contact with position D3 on the first terminal 201a, and the second test lead is in contact with position D1 on the third terminal 201c to test the total resistance R of the second zone. s2 Or, the first test lead is in contact with position D3 on the first terminal 201a, and the second test lead is in contact with position D2 on the third terminal 201c to test the total resistance R of the second zone. s2 .

[0118] In this embodiment, the total resistance of the second region R s2 , including: the second area parasitic resistance R O2 , the second zone contact resistance R C2 and the total resistance of (2n+2) / 2 resistors under test 203 in the second region 200 b .

[0119] The second region parasitic resistance R O2 At least includes: a first terminal resistor and a third terminal resistor; in this embodiment, the second region parasitic resistor R O2 Including: a first terminal resistor and a third terminal resistor; in other embodiments, the second region parasitic resistor R O2 It also includes: a resistor of the resistance tester itself; the first terminal resistor is connected in series with a third terminal resistor, and the third terminal resistor is connected in series with the resistor of the resistance tester itself.

[0120] Continue to refer Figure 2 , combined with Figure 8 and Figure 11 The first terminal resistance refers to the resistance of the first terminal 201a between the position D4 where the first test lead contacts the first terminal 201a and the other end 209b of the first resistor to be measured in the second area, i.e., the first terminal resistance R d22 The second terminal resistance refers to the resistance of the third terminal 201c between the position D2 where the second test lead contacts the third terminal 201c and the end 208a of the first resistor to be measured in the second zone, i.e., the third terminal resistance R d21 .

[0121] In this embodiment, the parasitic resistance of the second region is R O2 , is the third terminal resistance R d21 and the first terminal resistance R d22 The sum of the resistance values after series connection is:

[0122] R O2 =R d21 +R d22 .

[0123] The second region contact resistance R C2 The contact resistance includes: the contact resistance between one via plug 202 at one end 209a of each resistor to be measured in the second area and the resistor to be measured, and the contact resistance between one via plug 202 at the other end 209b of each resistor to be measured in the second area and the resistor to be measured. The second area 200b has (2n+2) / 2 resistors to be measured 203, that is, the contact resistance between one via plug 202 at one end 209a of the first resistor to be measured 203 in the second area and the first resistor to be measured in the second area, and the contact resistance between one via plug 202 at the other end 209b of the first resistor to be measured 203 in the second area and the first resistor to be measured 203 in the second area. the contact resistance between a via plug 202 at one end 209a of the resistor 203 and the second resistor to be measured in the second area, and the contact resistance between a via plug 202 at the other end 209b of the second resistor to be measured in the second area and the second resistor to be measured 203 in the second area, ..., the contact resistance between a via plug 202 at one end 209a of the (2n+2) / 2th resistor to be measured 203 in the second area and the (2n+2) / 2th resistor to be measured in the second area, and the contact resistance between a via plug 202 at the other end 209b of the (2n+2) / 2th resistor to be measured 203 in the second area and the (2n+2) / 2th resistor to be measured 203 in the second area.

[0124] In this embodiment, there are (2n+2) / 2 resistors under test 203 in the second area 200 b , and the (2n+2) / 2 resistors under test 203 are connected in parallel.

[0125] Continue to refer Figure 11 The dotted box 302 corresponds to the area where the first resistor to be measured in the second zone is located. The total resistance R in the dotted box 302 302 The dotted box 303 corresponds to the area where the (2n+2) / 2th resistor to be measured is located in the second zone. The total resistance R in the dotted box 303 303 , the total resistance R 302 =R 303 .

[0126] Continue to refer Figure 11 , the total resistance R 302 The first resistor to be measured in the second region comprises: one end 209a of the first resistor to be measured in the second region, a contact resistance R connected in series between a via plug 202 and the first resistor to be measured in the second region C , the other end of the first resistor to be measured in the second area, a contact resistance R between a via plug 202 and the first resistor to be measured in the second area is connected in series C , the resistance R1 of the first resistor to be measured 203 in the second area, that is:

[0127] R 302 =R1+2R C .

[0128] In this embodiment, the total resistance of the second region R s2 , is the parasitic resistance R of the second region O2 (R O2 =R O )The total resistance R of (2n+2) / 2 in series and in parallel 302 , the total resistance of the second region R s2 The calculation formula is as follows:

[0129] R s2 =((R1+2R C ) / (n+1))+R O

[0130] =(R1 / (n+1))+(2R C / (n+1))+R O ……(2)

[0131] Step S13: According to the total resistance R of the first region s1 And the total resistance of the second area R s2 , and obtain the resistance R1 of the resistor to be measured.

[0132] In this embodiment, according to the above formulas (1) and (2), the calculation formula of R1 can be derived as follows:

[0133] R1=((n+1) / n)*(R s1 -R s2 )

[0134] Wherein, n is a natural number greater than or equal to 1, then according to the total resistance R of the first region s1 、The total resistance of the second area R s2 , it can be concluded that the resistance of the resistor to be measured 203 is R1.

[0135] Step S14: Provide test signals for the second terminal and the fourth terminal to obtain the total resistance R of the third region. s3 .

[0136] In this embodiment, the total resistance R of the third zone is tested by a resistance tester. s3 .

[0137] The resistance tester includes one or more of a multimeter, an ohmmeter, and a four-probe resistance meter. In this embodiment, a multimeter is used to test the total resistance R s3 .

[0138] The multimeter includes a first test lead and a second test lead, wherein the first test lead is electrically connected to the second terminal 201b, and the second test lead is electrically connected to the fourth terminal 201d, so as to obtain the total resistance R of the third area. s3 In this embodiment, Figure 2 As shown, the first test lead is in contact with position D8 on the second terminal 201b, and the second test lead is in contact with position D9 on the fourth terminal 201d to test the total resistance R of the third area. s3 In some embodiments, the first test lead is in contact with position D8 on the second terminal 201b, and the second test lead is in contact with position D10 on the fourth terminal 201d to test the total resistance R of the third zone. s3 Or, the first test lead is in contact with position D7 on the second terminal 201b, and the second test lead is in contact with position D10 on the fourth terminal 201d to test the total resistance R of the second zone. s2 Or, the first test lead is in contact with position D7 on the second terminal 201b, and the second test lead is in contact with position D9 on the fourth terminal 201d to test the total resistance R of the third zone. s3 .

[0139] In this embodiment, the total resistance of the third region R s3 , including: the third area parasitic resistance R O3 , the third zone contact resistance RC3 and the total resistance of (2n+2) / 2 resistors to be measured 203 in the third region 200 c.

[0140] The third region parasitic resistance R O3 At least includes: a second terminal resistor and a fourth terminal resistor; in this embodiment, the third region parasitic resistor R O3 Including: a second terminal resistor and a fourth terminal resistor; in other embodiments, the third region parasitic resistor R O3 It also includes: a resistor of the resistance tester itself; the second terminal resistor is connected in series with a fourth terminal resistor, and the fourth terminal resistor is connected in series with the resistor of the resistance tester itself.

[0141] Continue to refer Figure 2 , combined with Figure 9 and Figure 12 The second terminal resistance refers to the resistance of the second terminal 201b between the position D8 where the first test lead contacts the second terminal 201b and the end 210a of the first resistor to be measured in the third area, that is, the first terminal resistance R d31 The fourth terminal resistance refers to the resistance of the fourth terminal 201d between the position D9 where the second test lead contacts the fourth terminal 201d and the other end 210b of the (2n+2) / 2th resistor to be measured in the third region, i.e., the fourth terminal resistance R d32 .

[0142] In this embodiment, the parasitic resistance of the third region is R O3 , is the second terminal resistance R d31 and the fourth terminal resistor R d32 The sum of the resistance values after series connection is:

[0143] R O3 =R d31 +R d32 .

[0144] The third region contact resistance R C3The contact resistance includes: the contact resistance between the (2n+2) / 2 via plugs 202 at one end 210a of each resistor to be measured in the third area and the resistor to be measured, and the contact resistance between the (2n+2) / 2 via plugs 202 at the other end 210b of each resistor to be measured in the third area and the resistor to be measured. The third area 200c has (2n+2) / 2 resistors to be measured 203, that is, the contact resistance between the (2n+2) / 2 via plugs 202 at one end 210a of the first resistor to be measured 203 in the third area and the first resistor to be measured in the third area, and the contact resistance between the (2n+2) / 2 via plugs 202 at the other end 210b of the first resistor to be measured 203 in the third area and the first resistor to be measured 203 in the third area, and the contact resistance between the (2n+2) / 2 via plugs 202 at the other end 210b of the first resistor to be measured 203 in the third area and the first resistor to be measured 203 in the third area. the contact resistance between the (2n+2) / 2 via plugs 202 at one end 210a of the resistor 203 and the second resistor to be measured in the third area, and the contact resistance between the (2n+2) / 2 via plugs 202 at the other end 210b of the second resistor to be measured in the third area and the second resistor to be measured 203 in the third area, ..., the contact resistance between the (2n+2) / 2 via plugs 202 at one end 210a of the (2n+2) / 2 resistor to be measured 203 in the third area and the (2n+2) / 2 resistor to be measured in the third area, and the contact resistance between the (2n+2) / 2 via plugs 202 at the other end 210b of the (2n+2) / 2 resistor to be measured 203 in the third area and the (2n+2) / 2 resistor to be measured 203 in the third area.

[0145] In this embodiment, there are (2n+2) / 2 resistors under test 203 in the third area 200 c , and the (2n+2) / 2 resistors under test 203 are connected in parallel.

[0146] Continue to refer Figure 12 The dotted box 304a corresponds to the contact resistance between the (2n+2) / 2 parallel-connected via plugs at one end 210a of the first resistor to be measured in the third region and the first resistor to be measured 203 in the third region (i.e., the second terminal contact resistance R C31 ,like Figure 12 The dotted box 304b corresponds to the contact resistance between the (2n+2) / 2 parallel-connected via plugs at the other end 210b of the first resistor to be measured in the third region and the first resistor to be measured 203 in the third region (i.e., the fourth terminal contact resistance R C32 ,like Figure 12 The resistance in the dotted box 304b is:

[0147] R C31 =R C32 =R C / (n+1)

[0148] Continue to refer Figure 12 The dotted box 304 corresponds to the area where the first resistor to be measured is located in the third zone. The total resistance R 304 The dotted box 305 corresponds to the area where the (2n+2) / 2th resistor to be measured is located in the third zone. The total resistance R in the dotted box 305 305 , the total resistance R 304 =R 305 .

[0149] Continue to refer Figure 12 , the total resistance R 304 The contact resistance R between the first resistor to be measured in the third area and the first resistor to be measured in the third area is comprised of: one end 210a of the first resistor to be measured in the third area, and (2n+2) / 2 via plugs 202 connected in series. C31 , the other end 210b of the first resistor to be measured in the third area, the contact resistance R between the (2n+2) / 2 via plugs 202 and the first resistor to be measured in the third area in series C32 , the resistance R1 of the first resistor to be measured 203 in the third area, that is:

[0150] R 304 =R1+2R C / (n+1).

[0151] In this embodiment, the total resistance of the third region R s3 , is the parasitic resistance R of the third region O3 (R O3 =R O )The total resistance R of (2n+2) / 2 in series and in parallel 304 , the total resistance of the third region R s2 The calculation formula is as follows:

[0152] R s3 =(R1+(2R C / (n+1))) / (n+1)+R O

[0153] =(R1 / (n+1))+(2R C / (n+1) 2 )+R O ……(3)

[0154] Step S15: According to the total resistance R of the first region s1 And the total resistance of the third zone R s3 , and obtain the parasitic resistance of the third region.

[0155] In this embodiment, according to the above formulas (1) and (3), the parasitic resistance of the third region R can be derived as O The calculation formula is as follows:

[0156] RO =((n+1)*R s3 -R s1 ) / n

[0157] n is a natural number greater than or equal to 1, according to the total resistance R s1 、Total resistance of the third zone R s3 , the parasitic resistance of the third region R is obtained O3 , that is, the parasitic resistance of each area R O .

[0158] It should be noted that the parasitic resistance R O1 Equal to the parasitic resistance R of the second region O2 , the second region parasitic resistance R O2 Equal to the parasitic resistance R of the third region O3 , the third region parasitic resistance R O3 Equal to the parasitic resistance R of each area O , in order to improve the accuracy of resistance testing.

[0159] Step S16: According to the total resistance R of the second region s2 And the total resistance of the third zone R s3 , and obtain the contact resistance of the third zone.

[0160] In this embodiment, according to the above formulas (2) and (3), the contact resistance R of the third region can be derived: C The calculation formula is as follows:

[0161] R C =((n+1) 2 / 2n)*(R s2 -R s3 )

[0162] n is a natural number greater than or equal to 1, according to the total resistance R s2 、Total resistance of the third zone R s3 , the contact resistance R of the third zone is obtained C , that is, the contact resistance of a single via plug R C .

[0163] It should be noted that, in some embodiments, the single via plug contact resistance R C The resistance of the single via plug is relatively thin, and the contact resistance R C The resistance of a single via plug itself may be ignored, and this is not intended to limit the present application.

[0164] Continue to refer Figure 2, the positions of the positions D1 to D10 on the respective terminals can be adjusted so that the parasitic resistance R O1 Equal to the parasitic resistance R of the second region O2 , the second region parasitic resistance R O2 Equal to the parasitic resistance R of the third region O3 In this embodiment, the symmetry axis E3E4 of the resistor to be tested in the first zone, the symmetry axis E1E2 of each resistor to be tested in the second zone, and the symmetry axis E5E6 of each resistor to be tested in the third zone all extend parallel to the Y direction, and the distance from the position D1 to the symmetry axis E1E2 is equal to the distance from the position D2 to the symmetry axis E1E2, the distance from the position D2 to the symmetry axis E1E2 is equal to the distance from the position D3 to the symmetry axis E1E2, the distance from the position D3 to the symmetry axis E1E2 is equal to the distance from the position D4 to the symmetry axis E1E2; the distance from the position D4 to the symmetry axis E1E2 is equal to The distance from position D5 to the axis of symmetry E3E4 is equal to the distance from position D6 to the axis of symmetry E3E4; the distance from position D6 to the axis of symmetry E3E4 is equal to the distance from position D7 to the axis of symmetry E5E6, the distance from position D7 to the axis of symmetry E5E6 is equal to the distance from position D8 to the axis of symmetry E5E6, the distance from position D8 to the axis of symmetry E5E6 is equal to the distance from position D9 to the axis of symmetry E5E6, and the distance from position D9 to the axis of symmetry E5E6 is equal to the distance from position D10 to the axis of symmetry E5E6.

[0165] The contact resistance of each via plug 202 in the first region 200a, the second region 200b and the third region 200c is R C , also known as the single via plug contact resistance R C .

[0166] To further improve the accuracy of resistance testing, in this embodiment, the same resistance tester and the same test signal are used to provide test signals to the first terminal 201a, the second terminal 201b and the third terminal 201c, thereby reducing equipment differences between different resistance testers.

[0167] It should be noted that, in some embodiments, each zone is tested using an independent terminal, the first terminal 201a includes a first terminal 1 and a first terminal 2, the first terminal 1 and the first terminal 2 are disconnected, the second terminal 201b includes a second terminal 1 and a second terminal 2, the second terminal 1 and the second terminal 2 are disconnected; along the direction parallel to the X, the lengths of the first terminal 1, the first terminal 2, the second terminal 1, the second terminal 2, the third terminal and the fourth terminal are equal, and the edges where the lengths of the first terminal 1, the first terminal 2, the second terminal 1, the second terminal 2, the third terminal and the fourth terminal extend parallel to the X direction, and the edges where the lengths are located are on the same straight line; along the direction parallel to the Y, the first terminal 1, the first terminal 2, the second terminal 1, the second terminal 2, the third terminal and the fourth terminal are equal, and the edges where the lengths of the first terminal 1, the first terminal 2, the second terminal 1, the second terminal 2, the third terminal and the fourth terminal extend parallel to the X direction, and the edges where the lengths are located are on the same straight line; The widths of terminal one, the first terminal two, the second terminal one, the second terminal two, the third terminal and the fourth terminal are equal, and the edges of the widths of the first terminal one, the first terminal two, the second terminal one, the second terminal two, the third terminal and the fourth terminal extend parallel to the Y direction; the position D5 is located on the first terminal one, the position D6 is located on the second terminal one, the position D3 and the position D4 are located on the first terminal two, the position D7 and the position D8 are located on the second terminal two, the position D1 and the position D2 are located on the third terminal, and the position D9 and the position D10 are located on the second terminal two. Positions D1 to D10 in this section can refer to the description of positions D1 to D10 in the aforementioned embodiment and are not repeated here.

[0168] It should be noted that, along the X direction, the longest sides of the first resistor to be tested 203 in the first zone, the first resistor to be tested 203 in the second zone, the first resistor to be tested 203 in the third zone, the first terminal, the second terminal, the third terminal and the fourth terminal are on the same straight line to improve the accuracy of the resistance test result; the longest side is the side away from the (2n+2) / 2nd resistor to be tested 203 in the second zone, that is, the side of the UP end.

[0169] Alternatively, along the X direction, the longer sides of the first resistor to be tested 203 in the first zone, the (2n+2) / 2nd resistor to be tested 203 in the second zone, the (2n+2) / 2nd resistor to be tested 203 in the third zone, the first terminal, the second terminal, the third terminal, and the fourth terminal are on the same straight line to improve the accuracy of the resistance test result; the longer side is the side away from the first resistor to be tested 203 in the second zone, that is, the side at the DOWN end.

[0170] To further understand and improve the calculation efficiency of resistance, in the embodiment of the present application, n=1 is used as an example for explanation, as follows:

[0171] When n=1, the number of the via plugs 202 in the first area 200a is 4;

[0172] One end 208a of the first region resistor to be measured is coupled to the first terminal 201a through two parallel connected via plugs 202, and the other end 208b of the first region resistor to be measured is coupled to the second terminal 201b through two parallel connected via plugs 202.

[0173] The second area 200 b includes two resistors to be measured 203 , and the resistors to be measured 203 are connected in parallel.

[0174] One end 209a of each resistor under test in the second area is coupled to the third terminal 201c via a via plug 202, and the other end 209b of each resistor under test in the second area is coupled to the first terminal 201a via a via plug 202. The third area 200c includes two resistors under test 203, each of which is connected in parallel. One end 210a of each resistor under test in the third area is coupled to the second terminal 201b via two parallel via plugs 202, and the other end 210b of each resistor under test in the third area is coupled to the fourth terminal 201d via two parallel via plugs 202.

[0175] When n=1, the calculation formula of the resistor to be measured 203 is R1 is:

[0176] R1=2*(R s1 -R s2 )

[0177] The single via plug contact resistance R C The calculation formula is:

[0178] R C =2*(R s2 -R s3 )

[0179] The parasitic resistance of each area R O The calculation formula is:

[0180] R O =2*R s3 -R s1

[0181] For the relevant description of the calculation method corresponding to the resistance test structure, reference may be made to the corresponding description in the aforementioned resistance test structure, which will not be repeated here.

[0182] Although the present invention has been disclosed above in terms of preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can use the methods and technical contents disclosed above to make possible changes, modifications and combinations of the technical solutions of the present invention without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the scope of protection of the technical solution of the present invention.

Claims

1. A resistance testing structure, characterized in that: include: A substrate comprising a first region and a second region connected to the first region; The first zone includes: a resistor to be measured; First terminal; Second terminal; The number of via plugs is (2n+2), where n is a natural number greater than or equal to 1; One end of the resistor to be measured in the first region is coupled to the first terminal through (2n+2) / 2 via plugs connected in parallel, and the other end of the resistor to be measured in the first region is coupled to the second terminal through (2n+2) / 2 via plugs connected in parallel; The second zone includes: (2n+2) / 2 resistors to be measured, and the resistors to be measured are connected in parallel; The third terminal; One end of each resistor to be measured in the second area is coupled to the third terminal through a via plug, and the other end of each resistor to be measured in the second area is coupled to the first terminal through a via plug.

2. The resistance testing structure according to claim 1, wherein: Also includes: a third zone connected to the first zone; The third zone includes: (2n+2) / 2 resistors to be measured, and the resistors to be measured are connected in parallel; Fourth terminal; One end of each resistor to be measured in the third area is coupled to the second terminal through (2n+2) / 2 parallel via plugs, and the other end of each resistor to be measured in the third area is coupled to the fourth terminal through (2n+2) / 2 parallel via plugs.

3. The resistance testing structure according to claim 1 or 2, wherein: The via plugs in each region have the same shape and size.

4. The resistance testing structure according to claim 1 or 2, wherein: The material of the resistor to be measured in each region includes: one or more of doped N-type semiconductor material, doped P-type semiconductor material and metal material.

5. The resistance testing structure according to claim 2, wherein: The first terminal, the second terminal, the third terminal and the fourth terminal are made of the same material; The first terminal, the second terminal, the third terminal and the fourth terminal have the same length and width; The thickness of the materials of the first terminal, the second terminal, the third terminal and the fourth terminal is the same; The material of the via plug includes any one of the following: The material of the via plug is consistent with the material of the resistor to be measured; The material of the via plug is consistent with that of the terminals.

6. The resistance testing structure according to claim 2, wherein: An overlapping area between one end of the resistor to be measured in the first region and the first terminal is equal to an overlapping area between the other end of the resistor to be measured in the first region and the second terminal; An overlapping area between one end of each resistor to be measured in the second area and the third terminal is equal to an overlapping area between the other end of each resistor to be measured in the second area and the first terminal, and is also equal to an overlapping area between one end of a resistor to be measured in the first area and the first terminal.

7. The resistance testing structure according to claim 6, wherein: An overlapping area between one end of each resistor to be measured in the third area and the second terminal is equal to an overlapping area between the other end of each resistor to be measured in the third area and the fourth terminal, and is also equal to an overlapping area between one end of a resistor to be measured in the first area and the first terminal.

8. A calculation method for a resistance test structure, applied to the resistance test structure according to any one of claims 1 to 7, characterized in that: include: Provide the first terminal and the second terminal test signal to obtain the total resistance R of the first area s1 ; Provide the first terminal and the third terminal test signal to obtain the total resistance R of the second area s2 ; According to the total resistance R of the first region s1 And the total resistance of the second area R s2 , obtain the resistance R1 of the resistor to be measured; The total resistance R of the first region s1 , including: a first region parasitic resistance, a first region contact resistance and a resistance of a resistor to be measured; The first region parasitic resistance includes at least: a first terminal resistance and a second terminal resistance; The first region contact resistance includes: contact resistance between (2n+2) / 2 parallel-connected via plugs at one end of the first region-a resistor to be measured and the first region-a resistor to be measured, and contact resistance between (2n+2) / 2 parallel-connected via plugs at the other end of the first region-a resistor to be measured and the first region-a resistor to be measured; The total resistance of the second region R s2 , including: the parasitic resistance of the second zone, the contact resistance of the second zone and the total resistance of (2n+2) / 2 resistors to be measured in the second zone; The parasitic resistance of the second region includes at least: a first terminal resistance and a third terminal resistance; The second area contact resistance includes: the contact resistance between a via plug at one end of each resistor to be measured in the second area and the resistor to be measured, and the contact resistance between a via plug at the other end of each resistor to be measured in the second area and the resistor to be measured.

9. The calculation method according to claim 8, wherein: Also includes: Provide the second terminal and the fourth terminal test signal to obtain the total resistance R of the third area s3 ; According to the total resistance R of the first region s1 And the total resistance of the third zone R s3 , get the parasitic resistance of the third region; According to the total resistance R of the second region s2 And the total resistance of the third zone R s3 , the contact resistance of the third zone is obtained; The total resistance of the third region R s3 , including: the parasitic resistance of the third zone, the contact resistance of the third zone and the total resistance of (2n+2) / 2 resistors to be measured in the third zone; The parasitic resistance of the third region at least includes: a second terminal resistance and a fourth terminal resistance; The contact resistance of the third zone includes: the contact resistance between (2n+2) / 2 parallel-connected via plugs at one end of each resistor to be measured in the third zone and the resistor to be measured, and the contact resistance between (2n+2) / 2 parallel-connected via plugs at the other end of each resistor to be measured in the third zone and the resistor to be measured.

10. The calculation method according to claim 9, wherein: The parasitic resistance of the first region is equal to the parasitic resistance of the second region, the parasitic resistance of the second region is equal to the parasitic resistance of the third region, and the parasitic resistance of the third region is equal to the parasitic resistance R of each region. O The contact resistance of each via plug in the first, second and third regions is R C , the contact resistance of the third zone is also R C ; Use the following formula: R1=((n+1) / n)*(R s1 -R s2 ), n is a natural number greater than or equal to 1, according to the total resistance R of the first region s1 、The total resistance of the second area R s2 , it is concluded that the resistance to be measured is R1; Use the following formula: R C =((n+1) 2 / 2n)*(R s2 -R s3 ), n is a natural number greater than or equal to 1, according to the total resistance R s2 、Total resistance of the third zone R s3 , the via plug contact resistance R C ; Use the following formula: R O =((n+1)*R s3 -R s1 ) / n, n is a natural number greater than or equal to 1, according to the total resistance R s1 、Total resistance of the third zone R s3 , the parasitic resistance R of each area is obtained O .

11. The calculation method according to claim 8, wherein: The total resistance R of the first zone is measured by a resistance tester s1 、The total resistance of the second area R s2 And the total resistance of the third zone R s3 .

Images