Power integrated device and vehicle

Abstract

The invention provides a power integrated device and a vehicle. The power integrated device comprises an inverter assembly and a vehicle-mounted charger assembly, the inverter assembly and the vehicle-mounted charger assembly share a voltage output unit, the voltage output unit has a first conduction mode and a second conduction mode, in the first conduction mode, the voltage output unit is used for the inverter assembly, and in the second conduction mode, the voltage output unit is used for the vehicle-mounted charger assembly. The power integrated device is enabled to function as an inverter; and in the second conduction mode, the voltage output unit is used for the vehicle-mounted charger assembly, so that the power integrated device functions as a vehicle-mounted charger. According to the invention, the integration level of the power integrated device can be improved, the power integrated device is miniaturized, the power density is improved, and the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of power electronics, and in particular to a power integrated device and a vehicle. Background Art

[0002] Power electronics technology plays a vital role in the efficiency and performance of electric vehicles and other electric devices. Currently, more and more components such as DC / DC converters, inverters, and on-board chargers (OBCs) are being integrated into a single power integrated device to save space and increase power density. Typically, these components are placed adjacent to each other and share a housing. This means that each component needs to work independently. For example, the inverter integrated into a single power integrated device uses its own power module to convert voltage and current from direct current to alternating current.

[0003] If the integration level is further improved, it will be beneficial to further miniaturize the device, further increase the power density, and ultimately reduce the cost. Therefore, it is necessary to improve the existing technology.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present invention, and therefore it may contain information that does not constitute the prior art known to those skilled in the art. Summary of the Invention

[0005] In order to solve one or more of the above problems existing in the prior art, the present invention provides a power integrated device and a vehicle.

[0006] The power integrated device of the present invention includes an inverter component and an on-board charger component. The inverter component and the on-board charger component share a voltage output unit. The voltage output unit has a first conduction mode and a second conduction mode. In the first conduction mode, the voltage output unit is used for the inverter component, so that the power integrated device functions as an inverter; in the second conduction mode, the voltage output unit is used for the on-board charger component, so that the power integrated device functions as an on-board charger.

[0007] According to one embodiment of the present invention, the voltage output unit may include three bridge arm groups connected in parallel, and the output end of the voltage output unit is connected to the output end of the inverter component and the output end of the vehicle charger component via a first switch group. In the first conduction mode, the output ends of the three bridge arm groups are respectively connected to the U-phase interface, V-phase interface and W-phase interface of the inverter component through the first switch group; in the second conduction mode, two of the three bridge arm groups are respectively connected to the output end of the vehicle charger component.

[0008] According to an embodiment of the present invention, the power integrated device may further include a DC / DC converter component, and an input terminal of the DC / DC converter component is connected in parallel to the voltage output unit.

[0009] According to one embodiment of the present invention, each bridge arm group connected to the output end of the above-mentioned vehicle charger assembly in the above-mentioned second conduction mode can have two power modules serving as an upper arm and a lower arm respectively, and each power module includes two or more sub-bridge arm groups in parallel and has a first sub-conduction mode and a second sub-conduction mode, wherein in the above-mentioned first sub-conduction mode, the above-mentioned two or more sub-bridge arm groups are all turned on; in the above-mentioned second sub-conduction mode, a part of the above-mentioned two or more bridge arm groups are turned on, and the remaining sub-bridge arm groups are turned off.

[0010] According to one embodiment of the present invention, each of the above-mentioned two or more sub-bridge arm groups may include a first power switching element as an upper arm and a second power switching element as a lower arm, and the sub-bridge arm group that is turned on in the above-mentioned second sub-conduction mode is set as the first sub-bridge arm group, and the sub-bridge arm group that is turned off in the above-mentioned second sub-conduction mode is set as the second sub-bridge arm group. Then, in each power module, the gates of all the first power switching elements of the above-mentioned first sub-bridge arm group are connected to the first gate line, the gates of all the first power switching elements of the above-mentioned second sub-bridge arm group are connected to the second gate line, the gates of all the second power switching elements of the above-mentioned first sub-bridge arm group are connected to the third gate line, and the gates of all the second power switching elements of the above-mentioned second sub-bridge arm group are connected to the fourth gate line.

[0011] According to an embodiment of the present invention, there may be one first sub-bridge arm group in each power module, and there may be two or more second sub-bridge arm groups in each power module.

[0012] According to one embodiment of the present invention, the first power switching element may be any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET, and the second power switching element may be any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET.

[0013] According to one embodiment of the present invention, each of the above-mentioned power modules can be respectively connected to a gate drive circuit, and the above-mentioned gate drive circuit includes: a first gate driver for driving the above-mentioned first power switching element; a second gate driver for driving the above-mentioned second power switching element; and a second switch group, which is arranged between the above-mentioned power module, the above-mentioned first gate driver and the above-mentioned second gate driver, wherein, in the above-mentioned first sub-conduction mode, the above-mentioned first gate driver is connected to the above-mentioned first gate line and the above-mentioned second gate line through the above-mentioned second switch group, and the above-mentioned second gate driver is connected to the above-mentioned third gate line and the above-mentioned fourth gate line; in the above-mentioned second sub-conduction mode, the above-mentioned first gate driver is connected to the above-mentioned first gate line and disconnected from the above-mentioned second gate line through the above-mentioned second switch group, and the above-mentioned second gate driver is connected to the above-mentioned third gate line and disconnected from the above-mentioned fourth gate line.

[0014] According to an embodiment of the present invention, in the first conduction mode, all the power modules may be in a first sub-conduction mode; in the second conduction mode, all the power modules may be in a second sub-conduction mode.

[0015] The present invention also provides a vehicle, which is provided with the above-mentioned power integrated device.

[0016] According to one embodiment of the present invention, the above-mentioned vehicle is an electric vehicle.

[0017] By utilizing the present invention, the integration level of power integrated devices can be improved, the power integrated devices can be miniaturized, the power density can be increased, and the production cost can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other features of the present invention will be described in detail below with reference to specific exemplary embodiments shown in the accompanying drawings, which are given below only by way of illustration and therefore do not limit the present invention, in which:

[0019] Figure 1 FIG. 1 is a schematic diagram illustrating a power integrated device according to an embodiment of the present invention.

[0020] Figure 2 It shows that according to Figure 1 Schematic diagram of the enlarged portion A.

[0021] Figure 3 FIG. 1 is a schematic diagram illustrating a power module in a power integrated device according to an embodiment of the present invention.

[0022] Figure 4 is a circuit diagram showing a gate control circuit according to one embodiment of the present invention.

[0023] Figure 5 is another circuit diagram illustrating a gate control circuit according to an embodiment of the present invention.

[0024] Figure 6 is a circuit diagram showing a power integrated device according to another embodiment of the present invention.

[0025] Figure 7 FIG. 1 is a schematic diagram illustrating a power module according to another embodiment of the present invention.

[0026] Description of Reference Numerals

[0027] 1,1' Power Integrated Devices

[0028] 11 Inverter components

[0029] 12 OBC components

[0030] 13 Voltage output unit

[0031] 14 DC / DC converter components

[0032] 10, 10' Gate control circuit

[0033] 100 Power Module

[0034] 200, 200' first gate driver

[0035] 300, 300' Second gate driver DETAILED DESCRIPTION

[0036] The present invention is described in detail below through specific embodiments so that those skilled in the art can easily implement the present invention according to the contents disclosed in this specification. The embodiments described below are only some embodiments of the present invention, not all. Based on the embodiments described in this specification, all other embodiments obtained by those skilled in the art without paying creative work are within the scope of protection of the present invention. It should be noted that the embodiments in this specification and the features in the embodiments can be combined with each other unless there is a conflict.

[0037] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "side", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0038] In response to the problems existing in the prior art, the inventors hope to further integrate power integrated devices that integrate independently operating inverters and OBCs. Specifically, since the OBC is a device that converts AC power into DC power for charging high-voltage batteries, such as those in electric vehicles, the function of the inverter is to convert the high-voltage DC power of the high-voltage battery in electric vehicles into the AC power required by the motor. Therefore, in actual use, the inverter and OBC will not operate simultaneously. Based on this, it is considered to use some of the power modules of the inverter as the power modules in the OBC, thereby achieving the purpose of further improving the integration of power integrated devices, miniaturizing power integrated devices, increasing power density, and reducing production costs.

[0039] Specifically, the power integrated device of the present invention integrates an inverter assembly and an OBC assembly. The inverter assembly and the OBC assembly share a voltage output unit. By utilizing different circuit connection methods, the voltage output unit can function as both the voltage output unit of the inverter and the high-voltage output unit of the OBC assembly, thereby achieving compatibility. Specifically, the voltage output unit of the present invention has a first conduction mode and a second conduction mode. In the first conduction mode, the voltage output unit functions as the voltage output unit of the inverter assembly, allowing the power integrated device to function as an inverter; in the second conduction mode, the voltage output unit functions as the high-voltage output unit of the OBC assembly, allowing the power integrated device to function as an OBC. This significantly improves the integration level of the power integrated device.

[0040] Furthermore, if the OBC's DC-DC stage is integrated into the inverter, the OBC's DC-DC stage requirements differ from those of the inverter (its switches are approximately 60A, 100kHz-200kHz, compared to the inverter's 500A, 2kHz-20kHz), leading to switching challenges. For example, one of the four parallel switches will be used for the DC-DC converter. Therefore, for shared power modules, the present invention employs a new type of power module in which the gates of some power switching elements cannot be shared and must be separated. For this new power module, for example, in inverter mode, it is desirable to connect all gates to a common gate, utilizing all power switching elements; in OBC mode, only one of the four parallel switches, for example, will be used. The combination can be selected as needed (one of four, two of four, three of four, one of six, two of six, etc.). This significantly improves the compatibility of the power module.

[0041] Specifically, the power module shared by the inverter component and the OBC component in the voltage output unit of the present invention includes two types of bridge arm groups, namely the first sub-bridge arm group and the second sub-bridge arm group. Each sub-bridge arm group includes a first power switching element as an upper arm and a second power switching element as a lower arm, but the gates of all the first power switching elements of the first sub-bridge arm group are connected to the first gate line, the gates of all the first power switching elements of the second sub-bridge arm group are connected to the second gate line, the gates of all the second power switching elements of the first sub-bridge arm group are connected to the third gate line, and the gates of all the second power switching elements of the second sub-bridge arm group are connected to the fourth gate line. Through such an arrangement, the gates of the upper arms and lower arms of some of the multiple sub-bridge arm groups constituting the power module of the present invention are not shared with the gates of the upper arms and lower arms of other sub-bridge arm groups, respectively. In this way, the power module can realize a first mode (such as an inverter mode) using all the power switching elements and a second mode (such as an OBC mode) using some of the power switching elements. In addition, with its proprietary gate control circuit, it is possible to choose to use some or all of its power switching elements according to different application scenarios, thereby further integrating two power devices with different switching requirements, realizing the miniaturization of power electronics, improving power density, and reducing production costs.

[0042] Therefore, the power integrated device of the present invention is particularly suitable for the power supply system of electric vehicles. However, the present invention is not limited thereto and can also be applied to any power device using the OBC mode and the inverter mode.

[0043] In addition, the gate control circuit for controlling the above-mentioned power module of the present invention drives the gates of the upper arm and the lower arm of the power module respectively through two gate drivers (a first gate driver and a second gate driver), and enables the power module to switch between the inverter mode and the OBC mode through a switch group provided between the power module and the two gate drivers. Specifically, in the inverter mode (sometimes also referred to as the first sub-conduction mode), by operating the switch group, the gate driver is connected to the first gate line and the second gate line, and the second gate driver is connected to the third gate line and the fourth gate line; in the OBC mode (sometimes also referred to as the second sub-conduction mode), by operating the switch group, the first gate driver is connected to the first gate line but disconnected from the second gate line, and the second gate driver is connected to the third gate line but disconnected from the fourth gate line. In this way, the control of the power module of the present invention is achieved.

[0044] The following, combined Figure 1 The topology of the power integrated device according to the first embodiment of the present invention is described below.

[0045] Example 1

[0046] like Figure 1As shown, the power integrated device 1 of the embodiment 1 of the present invention integrates an inverter component 11 and an OBC component 12. The inverter component 11 includes an EMC filter 113, a DC-Link capacitor 112 and a voltage output unit 13 connected in parallel.

[0047] The voltage output unit 13 includes three bridge arm groups connected in parallel, each bridge arm group includes a power module as an upper arm and a power module as a lower arm. It should be noted that although for the sake of convenience, Figure 1 and the following Figure 6 In the present invention, the power module is simply labeled as an IGBT / SiC MOSFET. However, the specific structure of the power module used in the present invention is as follows. Figure 3 As shown, each power module includes four parallel sub-bridge arm groups. Figure 1 and the following Figure 6 In the embodiment, the gate control circuit for individually controlling the gate of each power module is omitted.

[0048] Depend on Figure 1 and Figure 2 As can be seen from the enlarged view of part A, the output end of the voltage output unit 13 is connected to the output end of the inverter component 11 and the output end of the OBC component 12 via a switch group consisting of a first switch S1 and a second switch S2 as a single-pole double-throw switch.

[0049] Combine Figure 1 and Figure 2 Specifically, the fixed end 2 of the first switch S1 is connected to a bridge arm group (also called the first bridge arm group) of the voltage output unit 13, a contact 1 of the first switch S1 is connected to the U-phase interface of the inverter component 11, and the other contact 3 is connected to an output end of the OBC component 12. In addition, the fixed end 2 of the second switch S2 is connected to another bridge arm group (also called the second bridge arm group) of the voltage output unit 13, a fixed end 2 of the second switch S2 is connected to the V-phase interface of the inverter component 11, and the other contact 3 is connected to the other output end of the OBC component 12. The last bridge arm group (also called the third bridge arm group) of the voltage output unit 13 is directly connected to the W-phase interface of the inverter component 11.

[0050] In this way, in addition, when the fixed end 2 of the first switch S1 is connected to the contact 1 and the fixed end 2 of the second switch S2 is connected to the contact 1, the first bridge arm group, the second bridge arm group and the third bridge arm group are respectively connected to the U-phase interface, the V-phase interface and the W-phase interface of the inverter component 11, the OBC function of the power integrated device 1 is turned off, the inverter component 11 works, and the current flows from each bridge arm group of the voltage output unit 13 to the motor 111.

[0051] Furthermore, when the fixed terminal 2 of the first switch S1 is connected to the contact 3 and the fixed terminal 2 of the second switch S2 is connected to the contact 3, the first and second bridge arm groups are respectively connected to the output terminals of the OBC assembly 12, and the four power modules (four IGBTs / SIC MOSFETs in the figure) become part of the LLC circuit on the secondary side of the OBC assembly 12. The current sensor of the inverter assembly 11 can be reused by the OBC assembly 12 to monitor the OBC output current. At this time, the inverter function of the power integrated device 1 is disabled, and the OBC assembly 12 is operational.

[0052] In this way, high integration of the inverter component 11 and the OBC component 12 can be achieved.

[0053] The following combination Figure 3 The specific structure of the power module 100 used in the first bridge arm group and the second bridge arm group according to the first embodiment of the present invention will be described.

[0054] The power module 100 of the first embodiment of the present invention includes four parallel sub-bridge arm groups. Figure 3 It can be seen that a first sub-bridge arm group is composed of a transistor Q1 as an upper arm and a transistor Q5 as a lower arm, and the three second sub-bridge arm groups are respectively composed of a transistor Q2 as an upper arm and a transistor Q6 as a lower arm, a transistor Q3 as an upper arm and a transistor Q7 as a lower arm, and a transistor Q4 as an upper arm and a transistor Q8 as a lower arm. Transistor Q1 constituting the first sub-bridge arm group has an independent gate, which is connected to the gate line G1, and transistor Q5 has an independent gate, which is connected to the gate line G3. In contrast, the gates of transistors Q2, Q3, and Q4 of the upper arm of the second sub-bridge arm group share a gate line (in other words, are connected to the same gate line G2), and the gates of transistors Q6, Q7, and Q8 of the lower arm of the second sub-bridge arm group share a gate line G4 (in other words, are connected to the same gate line G4). Therefore, Figure 1 The box composed of dotted lines is all the sub-bridge arm groups used in the first conduction mode (one first sub-bridge arm group and three second sub-bridge arm groups), and the box composed of dotted lines is part of the sub-bridge arm groups used in the second conduction mode, namely one first sub-bridge arm group, while the three second sub-bridge arm groups are not used.

[0055] In addition, by Figure 3 It can be seen that the positive P-pole of the power battery is connected to the common drain line D1 of each upper arm, the negative N-pole of the power battery is connected to the common source line S1 of each upper arm, and the terminal Ph is drawn out in the middle.

[0056] In this embodiment 1, the transistors Q1 to Q8 constituting the four parallel sub-bridge arm groups are SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), but the present invention is not limited to this. For example, the power switching elements constituting the sub-bridge arm groups can be any one or more combinations of Si IGBTs (Insulate-Gate Bipolar Transistors), SiC JFETs (Junction Field Effect Transistors), SiC MOSFETs, and GaN FETs (Field Effect Transistors).

[0057] In this embodiment, the number of the first sub-bridge arm group is one, and the number of the second sub-bridge arm groups is three, but the present invention is not limited thereto. In the case of an electric vehicle power system, when the OBC assembly is integrated with the inverter assembly, it is particularly preferred that the number of the first sub-bridge arm group is one, and the number of the second sub-bridge arm groups is three or more (for example, three or four).

[0058] It should be noted that the power module of the third bridge arm group that is not shared in the voltage output unit 13 (i.e., directly connected to the W-phase interface of the inverter component 11 in the figure) can adopt the new power module of the present invention, or it can adopt an ordinary power module (i.e., all upper arms are connected to a common gate line, and all lower arms are connected to a common gate line).

[0059] The following, combined Figure 4 The gate control circuit 10 for controlling the power module 100 according to the first embodiment of the present invention will be described.

[0060] like Figure 4 As shown, the gate control circuit 10 includes a power module 100, a first gate driver 200 for driving transistors Q1 to Q4 of each upper arm of the power module 100, and a second gate driver 300 for driving transistors Q5 to Q8 of each lower arm of the power module 100. In this embodiment, the first gate driver 200 and the second gate driver 300 are voltage-driven drivers.

[0061] The first switch S1 to the sixth switch S6 constitute the switch group of this embodiment. Figure 2As shown, the first switch S1 is a single-pole double-throw switch, with its fixed end 2 connected to the GH port of the first gate driver 200, one contact 3 of its movable end connected to the independent gate line G1 of transistor Q1, and the other contact 1 of its movable end connected to the common gate line G2 of transistors Q2 to Q4. A resistor R1_dcdc is provided between contact 3 and gate line G1, and a resistor R1_pwr is provided between contact 1 and gate line G2. The second switch S2 is a single-pole double-throw switch, with its fixed end 2 connected to the GL port of the first gate driver 200, one contact 3 of its movable end connected to the independent gate line G1 of transistor Q1, and the other contact 1 of its movable end connected to the common gate line G2 of transistors Q2 to Q4. A resistor R2_dcdc is provided between contact 3 and gate line G1, and a resistor R2_pwr is provided between contact 1 and gate line G2. The third switch S3 is a single-pole, single-throw (SPST) switch, one end of which is connected to gate line G1 and the other end to gate line G2. The fourth switch S4 is a single-pole, double-throw (SPDT) switch, with its fixed terminal 2 connected to the GH port of the second gate driver 300, a contact 3 on its active terminal connected to the independent gate line G3 of transistor Q5, and another contact 1 on its active terminal connected to the common gate line G4 of transistors Q6 through Q8. A resistor R6_dcdc is provided between contact 3 and gate line G3, and a resistor R7_pwr is provided between contact 1 and gate line G4. The fifth switch S5 is a single-pole, double-throw (SPDT) switch. Its fixed terminal 2 is connected to the GL port of the second gate driver 300. One contact 3 of its active terminal is connected to the independent gate line G3 of transistor Q5. The other contact 1 of its active terminal is connected to the common gate line G4 of transistors Q6 through Q8. A resistor R8_dcdc is provided between contact 3 and gate line G3, and a resistor R9_pwr is provided between contact 1 and gate line G4. The sixth switch S6 is a single-pole, single-throw (SPST) switch. One end of the switch is connected to gate line G3 and the other end is connected to gate line G4. Furthermore, the common source line S1 of transistors Q1 through Q4 is connected to the VEE port of the first gate driver 200, and the common source line S2 of transistors Q5 through Q8 is connected to the VEE port of the second gate driver 300.

[0062] By such configuration, the switches of the switch group are controlled as shown in Table 1 below, so that the power module 100 can be switched between the inverter mode and the OBC mode.

[0063] Table 1 Switch group operation table

[0064]

[0065] It should be noted that those skilled in the art will appreciate that the gate resistor structure must be changed according to the selected mode.

[0066] The following, combined Figure 5 Another embodiment of controlling the power module 100 of the first embodiment will be described.

[0067] like Figure 5 As shown, the gate control circuit 10' includes a power module 100, a first gate driver 200' for driving transistors Q1-Q4 of each upper arm of the power module 100, and a second gate driver 300' for driving transistors Q5-Q8 of each lower arm of the power module 100. In this embodiment, the first gate driver 200' and the second gate driver 300' are current-driven drivers.

[0068] The first switch S1 and the second switch S2 constitute the switch group of this embodiment. Specifically, one end of the first switch S1 is connected to port G1 of the first gate driver 200', and the other end is connected to the common gate line G2 of transistors Q2 through Q4. One end of the second switch S2 is connected to port G1 of the second gate driver 300', and the other end is connected to the common gate line G4 of transistors Q6 through Q8. Furthermore, gate line G1 is connected to port G1 of the first gate driver 200', and gate line G3 is connected to port G1 of the second gate driver 300'.

[0069] With such a configuration, the power module 100 can be switched between the inverter mode and the OBC mode by switching the switches of the switch group as shown in Table 2 below.

[0070] Table 2 Switch group operation table

[0071]

[0072]

[0073] It should be noted that the current-driven gate driver in this embodiment is conceptually similar to a simplified gate resistor switch, with the current level and waveform adjusted according to the selected mode.

[0074] In addition, when the power integrated device 1 functions as an inverter (i.e., in the first conduction mode), all power modules 100 are in the inverter mode; when the power integrated device 1 functions as an OBC (i.e., in the second conduction mode), all power modules 100 should be in the OBC mode.

[0075] In addition, combined Figure 6 The topological structure diagram of the power integrated device 1' according to the second embodiment of the present invention is described below.

[0076] Example 2

[0077] like Figure 6As shown, the power integrated device 1' of Example 2 of the present invention differs from that of Example 1 in that the power integrated device 1' further integrates a DC / DC converter assembly 14. The DC / DC converter assembly 14 is used to convert the high-voltage direct current of the high-voltage battery into low-voltage direct current via a phase-shifted full-bridge to charge the low-voltage battery. Therefore, the DC / DC converter assembly 14 can be further connected in parallel between the high-voltage battery and the inverter assembly 11.

[0078] Specifically, an input terminal of the DC / DC converter assembly 14 is connected between the EMC filter 113 and the DC-Link capacitor 112 .

[0079] Thus, the integration density of the power integrated device can be further improved.

[0080] In addition, another embodiment of the power module provided by the present invention is as follows: Figure 7 As shown, the marked Figure 3 Identical reference numerals denote the same meanings, and this power module has completely separate circuits, but uses the same substrate and housing as the power module of the previous embodiment. Therefore, this power module generally integrates two sub-circuits using different chip technologies or the same technology into a single power module with independent interfaces.

[0081] In summary, the technical solution according to the present invention has the following technical effects:

[0082] (1) It is highly cost-effective due to its high degree of integration.

[0083] (2) It can reduce material costs.

[0084] (3) It can save many components in traditional OBC components (such as power MOSFET, gate driver, DC-Link capacitor, current sensor, etc.).

[0085] (4) A higher packaging density can be achieved.

[0086] (5) The present invention is not limited to electric vehicles, but is also applicable to all power electronics applications integrating different systems in various fields (for example, medical systems, home applications, etc.).

[0087] (6) A further advantage of the present invention is that fewer MOSFETs are used for switching during partial load periods of the vehicle, saving energy and thus further extending the vehicle's range.

[0088] (7) The present invention is not limited to the semiconductor technologies described above (SiC MOSFET, Si IGBT, GaN, etc. are widely applicable).

[0089] (8) This can bring high benefits to customers.

[0090] It is understood that the structures shown in the drawings are for illustration only and may include more or fewer modules or components than shown in the drawings, or have configurations different from those shown in the drawings. It is worth noting that when implementing the present invention using embodiments not exhaustively listed in this specification, those skilled in the art may adaptively adjust the structure, position, or functional arrangement of the relevant components.

[0091] It should be understood that, where technically feasible, the technical features listed above for different embodiments may be combined with each other to form additional embodiments within the scope of the present invention. In addition, the specific examples and embodiments described above are non-limiting, and the structures, dimensions, and materials described above may be modified accordingly without departing from the scope of protection of the present invention.

[0092] In this application, the use of disjunctive conjunctions is intended to include conjunctions. The use of definite or indefinite articles is not intended to indicate cardinality. Specifically, reference to "the" object or "a" and "an" objects is intended to indicate a possible one of a plurality of such objects. In addition, the conjunction "or" may be used to convey simultaneous features, rather than mutually exclusive solutions. In other words, the conjunction "or" should be understood to include "and / or". The term "include" is inclusive and has the same scope as "comprise".

[0093] The above embodiments, particularly any "preferred" embodiments, are possible examples of implementations and are presented merely for a clear understanding of the principles of the present invention. Many changes and modifications may be made to the above embodiments without departing substantially from the spirit and principles of the technology described herein. All modifications are intended to be included within the scope of this disclosure.

[0094] All documents mentioned in this specification are incorporated herein by reference, as if each document were incorporated herein by reference in its entirety.

[0095] In addition, it should be understood that after reading the above description of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms also fall within the scope of protection of the present invention.

Claims

1. A power integrated device, characterized in that: The power integrated device includes an inverter component and an on-board charger component, The inverter assembly and the on-board charger assembly share a voltage output unit, and the voltage output unit has a first conduction mode and a second conduction mode. In the first conduction mode, the voltage output unit is used in the inverter assembly, so that the power integrated device functions as an inverter; in the second conduction mode, the voltage output unit is used in the on-board charger assembly, so that the power integrated device functions as an on-board charger.

2. The power integrated device according to claim 1, wherein: The voltage output unit includes three bridge arm groups connected in parallel, and the output end of the voltage output unit is connected to the output end of the inverter component and the output end of the on-board charger component via a first switch group. In the first conduction mode, through the first switch group, the output ends of the three bridge arm groups are respectively connected to the U-phase interface, V-phase interface and W-phase interface of the inverter component; in the second conduction mode, two bridge arm groups of the three bridge arm groups are respectively connected to the output end of the vehicle charger component.

3. The power integrated device according to claim 2, characterized in that: The power integrated device further includes a DC / DC converter component, and an input end of the DC / DC converter component is connected in parallel to the voltage output unit.

4. The power integrated device according to claim 2 or 3, characterized in that: Each bridge arm group connected to the output end of the vehicle charger assembly in the second conduction mode has two power modules serving as an upper arm and a lower arm respectively, and each power module includes two or more sub-bridge arm groups connected in parallel and has a first sub-conduction mode and a second sub-conduction mode, wherein in the first sub-conduction mode, the two or more sub-bridge arm groups are all turned on; in the second sub-conduction mode, some of the two or more sub-bridge arm groups are turned on, and the remaining sub-bridge arm groups are turned off.

5. The power integrated device according to claim 4, characterized in that: Each of the two or more sub-bridge arm groups includes a first power switching element as an upper arm and a second power switching element as a lower arm. The sub-bridge arm group that is turned on in the second sub-conduction mode is set as the first sub-bridge arm group, and the sub-bridge arm group that is turned off in the second sub-conduction mode is set as the second sub-bridge arm group. In each of the power modules, the gates of all the first power switching elements of the first sub-bridge arm group are connected to the first gate line, the gates of all the first power switching elements of the second sub-bridge arm group are connected to the second gate line, the gates of all the second power switching elements of the first sub-bridge arm group are connected to the third gate line, and the gates of all the second power switching elements of the second sub-bridge arm group are connected to the fourth gate line.

6. The power integrated device according to claim 5, characterized in that: There is one first sub-bridge arm group in each power module, and there are two or more second sub-bridge arm groups in each power module.

7. The power integrated device according to claim 5, characterized in that: The first power switching element is any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET, and the second power switching element is any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET.

8. The power integrated device according to claim 6, characterized in that: Each of the power modules is connected to a gate drive circuit, and the gate drive circuit includes: a first gate driver, configured to drive the first power switching element; a second gate driver, configured to drive the second power switching element; and A second switch group is provided between the power module, the first gate driver and the second gate driver, Wherein, in the first sub-conduction mode, the first gate driver is connected to the first gate line and the second gate line through the second switch group, and the second gate driver is connected to the third gate line and the fourth gate line; In the second sub-conduction mode, the first gate driver is connected to the first gate line and disconnected from the second gate line through the second switch group, and the second gate driver is connected to the third gate line and disconnected from the fourth gate line.

9. The power integrated device according to claim 8, characterized in that: In the first conduction mode, all the power modules are in a first sub-conduction mode; in the second conduction mode, all the power modules are in a second sub-conduction mode.

10. A means of transport, characterized in that: The vehicle is provided with the power integrated device according to any one of claims 1 to 9.

11. The vehicle according to claim 10, characterized in that: The vehicle is an electric car.

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