Power module and gate control circuit

Abstract

The invention provides a power module and a gate control circuit. The power module provided by the invention comprises more than two bridge arm groups which are connected in parallel, the power module has a first conduction mode and a second conduction mode, and in the first conduction mode, the more than two bridge arm groups are conducted; and in the second conduction mode, one part of the more than two bridge arm groups is conducted, and the other part of the more than two bridge arm groups is turned off. According to the invention, the integration level of the power electronics can be improved, the power electronics are miniaturized, the power density is improved, and the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of power electronics, and in particular to a power module and a gate control circuit. Background Art

[0002] Power electronics technology plays a vital role in the efficiency and performance of electric devices such as electric vehicles. More and more components, such as DC-DC converters, inverters, and on-board chargers (OBCs), are being integrated into a single device to save space and increase power density. Typically, these components are placed adjacent to each other and share a common housing. This means that each component needs to operate independently. For example, an inverter integrated into a single device uses its own power module to convert voltage and current from direct current to alternating current. Further increasing the level of integration will help further miniaturize the device, further increase power density, and ultimately reduce costs.

[0003] Therefore, there is a need to improve the existing technology.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present invention, and therefore it may contain information that does not constitute the prior art known to those skilled in the art. Summary of the Invention

[0005] In order to solve one or more of the above problems existing in the prior art, the present invention provides a power module and a gate control circuit.

[0006] The power module of the present invention includes two or more bridge arm groups connected in parallel, and the power module has a first conduction mode and a second conduction mode. In the first conduction mode, both the two or more bridge arm groups are turned on; in the second conduction mode, some of the two or more bridge arm groups are turned on, while others are turned off. The two or more bridge arm groups are divided into a first bridge arm group and a second bridge arm group. The power module has a first conduction mode and a second conduction mode. In the first conduction mode, both the first bridge arm group and the second bridge arm group are turned on; in the second conduction mode, the first bridge arm group is turned on, while the second bridge arm group is turned off.

[0007] According to one embodiment of the present invention, each of the above-mentioned two or more bridge arm groups may include a first power switching element as an upper arm and a second power switching element as a lower arm, the bridge arm group that is turned on in the second conduction mode is set as the first bridge arm group, and the bridge arm group that is turned off in the second conduction mode is set as the second bridge arm group, the gates of all the first power switching elements of the above-mentioned first bridge arm group can be connected to the first gate line, the gates of all the first power switching elements of the above-mentioned second bridge arm group can be connected to the second gate line, the gates of all the second power switching elements of the above-mentioned first bridge arm group can be connected to the third gate line, and the gates of all the second power switching elements of the above-mentioned second bridge arm group can be connected to the fourth gate line.

[0008] According to an embodiment of the present invention, the number of the first bridge arm group may be one.

[0009] According to an embodiment of the present invention, there may be more than two second bridge arm groups.

[0010] According to one embodiment of the present invention, the above-mentioned first power switching element can be any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET, and the above-mentioned second power switching element can be any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET.

[0011] The present invention also provides a gate control circuit, which includes: the above-mentioned power module; a first gate driver for driving the above-mentioned first power switching element; a second gate driver for driving the above-mentioned second power switching element; and a switch group, which is arranged between the above-mentioned power module, the above-mentioned first gate driver and the above-mentioned second gate driver, wherein, in the above-mentioned first conduction mode, the above-mentioned first gate driver is connected to the above-mentioned first gate line and the above-mentioned second gate line through the above-mentioned switch group, and the above-mentioned second gate driver is connected to the above-mentioned third gate line and the above-mentioned fourth gate line; in the above-mentioned second conduction mode, the above-mentioned first gate driver is connected to the above-mentioned first gate line and disconnected from the above-mentioned second gate line through the above-mentioned switch group, and the above-mentioned second gate driver is connected to the above-mentioned third gate line and disconnected from the above-mentioned fourth gate line.

[0012] According to an embodiment of the present invention, the first gate driver and / or the second gate driver may be a voltage-driven driver.

[0013] According to one embodiment of the present invention, the first gate driver and the second gate driver may be voltage-driven drivers, and the switch group may include: a first switch for selectively connecting a port of the first gate driver to the first gate line or the second gate line; a second switch for selectively connecting the other port of the first gate driver to the first gate line or the second gate line; a third switch connected between the first gate line and the second gate line; a fourth switch for selectively connecting a port of the second gate driver to the third gate line or the fourth gate line; a fifth switch for selectively connecting the other port of the second gate driver to the third gate line or the fourth gate line; and a sixth switch connected between the third gate line and the fourth gate line. In the first conduction mode, the first switch connects the port of the first gate driver to the second gate line, and the second switch The switch connects the other port of the first gate driver to the second gate line, the third switch connects the first gate line with the second gate line, the fourth switch connects the port of the second gate driver to the fourth gate line, the fifth switch connects the other port of the second gate driver to the fourth gate line, and the sixth switch connects the third gate line with the fourth gate line; in the second conduction mode, the first switch connects the port of the first gate driver to the first gate line, the second switch connects the other port of the first gate driver to the second gate line, the third switch disconnects the first gate line from the second gate line, the fourth switch connects the port of the second gate driver to the third gate line, the fifth switch connects the other port of the second gate driver to the third gate line, and the sixth switch disconnects the third gate line from the fourth gate line.

[0014] According to an embodiment of the present invention, the first gate driver and / or the second gate driver may be a current-driven driver.

[0015] According to one embodiment of the present invention, the first gate driver and the second gate driver may be current-driven drivers, the first gate line may be connected to the port of the first gate driver, and the third gate line may be connected to the port of the second gate driver. The switch group may include: a first switch, one end of which is connected to the port of the first gate driver and the other end is connected to the second gate line; and a second switch, one end of which is connected to the port of the second gate driver and the other end is connected to the fourth gate line. In the first conduction mode, the first switch connects the port of the first gate driver to the second gate line, and the second switch connects the port of the second gate driver to the fourth gate line. In the second conduction mode, the first switch disconnects the port of the first gate driver from the second gate line, and the second switch disconnects the port of the second gate driver from the fourth gate line.

[0016] By utilizing the present invention, the integration level of power electronics can be improved, the power electronics can be miniaturized, the power density can be increased, and the production cost can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other features of the present invention will be described in detail below with reference to certain exemplary embodiments shown in the accompanying drawings, which are given below by way of illustration only and therefore do not limit the present invention, in which:

[0018] Figure 1 is a schematic diagram illustrating a power module according to an embodiment of the present invention.

[0019] Figure 2 is a circuit diagram showing a gate control circuit according to one embodiment of the present invention.

[0020] Figure 3 is a circuit diagram showing a gate control circuit according to another embodiment of the present invention.

[0021] Figure 4 FIG. 1 is a schematic diagram illustrating a power module according to another embodiment of the present invention.

[0022] Description of Reference Numerals

[0023] 10, 10' Gate control circuit

[0024] 100 Power Module

[0025] 200, 200' first gate driver

[0026] 300, 300' Second gate driver DETAILED DESCRIPTION

[0027] The present invention is described in detail below through specific embodiments so that those skilled in the art can easily implement the present invention according to the contents disclosed in this specification. The embodiments described below are only some embodiments of the present invention, not all. Based on the embodiments described in this specification, all other embodiments obtained by those skilled in the art without paying creative work are within the scope of protection of the present invention. It should be noted that the embodiments in this specification and the features in the embodiments can be combined with each other unless there is a conflict.

[0028] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "side", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0029] In response to the problems existing in the prior art, the inventors considered designing a new type of power module that can selectively turn on some or all of the power switching elements therein to adapt to different application scenarios, thereby further improving the integration of power electronics.

[0030] Specifically, taking the example of integrating the DC-DC stage of an electric vehicle's OBC into the inverter, the OBC's DC-DC stage has different requirements than the inverter (its switches are approximately 60A, 100kHz-200kHz, compared to the inverter's 500A, 2kHz-20kHz), and this presents switching challenges, such as requiring only one of the four parallel switches to be used in the DC-DC converter. Therefore, consideration is given to adjusting the power module, namely, designing a new power module in which the gates of some power switching elements cannot be shared but rather separated. For this new power module, for example, in inverter mode, it is desirable to connect all gates to a common gate, utilizing all power switching elements; in OBC mode, only one of the four parallel switches, for example, is used. The combination can be selected as needed (one of four, two of four, three of four, one of six, two of six, etc.). This has led to the present invention.

[0031] The power module of the present invention includes two or more bridge arm groups in parallel. In the first conduction mode of the power module, all bridge arm groups are turned on (i.e., all switches are used). In the second conduction mode of the power module, a part of the bridge arm groups are turned on and the other part of the bridge arm groups are turned off (i.e., only some switches are used). The present invention is not limited to two bridge arm groups. In one embodiment, it includes a first bridge arm group and a second bridge arm group in parallel. In the first conduction mode of the power module, the first bridge arm group and the second bridge arm are both used (i.e., the first bridge arm group and the second bridge arm group are both turned on), and in the second conduction mode of the power module, the first bridge arm group is turned on but the second bridge arm group is turned off, i.e., only some switches are used. As a result, it is possible to select and use some or all of its power switching elements according to different application scenarios, thereby enabling further integration of two power devices with different switch requirements, miniaturization of power electronics, improved power density, and reduced production costs.

[0032] Specifically, each of the above-mentioned bridge arm groups includes a first power switching element as an upper arm and a second power switching element as a lower arm. If the bridge arm group that is turned on in the second conduction mode is set to the first bridge arm group, and the bridge arm group that is turned off in the second conduction mode is set to the second bridge arm group, then the gates of all the first power switching elements of the first bridge arm group are connected to the first gate line, the gates of all the first power switching elements of the second bridge arm group are connected to the second gate line, the gates of all the second power switching elements of the first bridge arm group are connected to the third gate line, and the gates of all the second power switching elements of the second bridge arm group are connected to the fourth gate line. Through such an arrangement, the gates of the upper arms and lower arms of some of the bridge arm groups (i.e., the first bridge arm group) in the multiple bridge arm groups constituting the power module of the present invention are not shared with the gates of the upper arms and lower arms of other bridge arm groups (i.e., the second bridge arm group), respectively. In this way, the power module can realize the first conduction mode using all the power switching elements and the second conduction mode using some of the power switching elements.

[0033] In addition, the present invention also provides a gate control circuit for controlling the above-mentioned power module. The gate control circuit of the present invention drives the gates of the upper arm and the lower arm of the power module respectively through two gate drivers (a first gate driver and a second gate driver), and enables the power module to switch between the first conduction mode and the second conduction mode through a switch group arranged between the power module and the two gate drivers. Specifically, in the first conduction mode, by operating the switch group, the gate driver is connected to the first gate line and the second gate line, and the second gate driver is connected to the third gate line and the fourth gate line; in the second conduction mode, through the switch group, the first gate driver is connected to the first gate line but disconnected from the second gate line, and the second gate driver is connected to the third gate line but disconnected from the fourth gate line. In this way, the control of the power module is achieved.

[0034] The following, combined Figure 1The structure of the power module according to the first embodiment of the present invention will be described.

[0035] Example 1

[0036] like Figure 1 As shown, the power module 100 of embodiment 1 of the present invention includes four parallel bridge arm groups. As can be seen from the figure, a first bridge arm group is composed of a transistor Q1 as an upper arm and a transistor Q5 as a lower arm, and the three second bridge arm groups are respectively composed of a transistor Q2 as an upper arm and a transistor Q6 as a lower arm, a transistor Q3 as an upper arm and a transistor Q7 as a lower arm, and a transistor Q4 as an upper arm and a transistor Q8 as a lower arm. The transistor Q1 constituting the first bridge arm group has an independent gate, which is connected to the gate line G1, and the transistor Q5 has an independent gate, which is connected to the gate line G3. In contrast, the gates of the transistors Q2, Q3, and Q4 of the upper arm of the second bridge arm group share a gate line (in other words, are connected to the same gate line G2), and the gates of the transistors Q6, Q7, and Q8 of the lower arm of the second bridge arm group share a gate line G4 (in other words, are connected to the same gate line G4). Thus, Figure 1 The frame formed by dotted lines represents all the bridge arm groups used in the first conduction mode (one first bridge arm group and three second bridge arm groups), and the frame formed by dotted lines represents part of the bridge arm groups used in the second conduction mode, namely one first bridge arm group, while the three second bridge arm groups are not used.

[0037] In addition, by Figure 1 It can be seen that the positive P-pole of the power battery is connected to the common drain line D1 of each upper arm, the negative N-pole of the power battery is connected to the common source line S1 of each upper arm, and the terminal Ph is drawn out in the middle.

[0038] In this embodiment 1, the transistors Q1 to Q8 constituting the four parallel bridge arm groups are SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), but the present invention is not limited thereto. For example, the power switching elements constituting the bridge arm groups may be any one or more combinations of Si IGBTs (Insulate-Gate Bipolar Transistors), SiC JFETs (Junction Field Effect Transistors), SiC MOSFETs, and GaN FETs (Field Effect Transistors).

[0039] In this embodiment, the number of first bridge arm groups is one, and the number of second bridge arm groups is three, but the present invention is not limited thereto. In the case of an electric vehicle power system, when the OBC assembly is integrated with the inverter assembly, it is particularly preferred that the number of first bridge arm groups is one, and the number of second bridge arm groups is three or more (for example, three or four).

[0040] The following, combined Figure 2 A gate control circuit 10 for controlling the power module 100 of the first embodiment will be described as a second embodiment of the present invention.

[0041] Example 2

[0042] like Figure 2 As shown, the gate control circuit 10 includes a power module 100, a first gate driver 200 for driving transistors Q1 to Q4 of each upper arm of the power module 100, and a second gate driver 300 for driving transistors Q5 to Q8 of each lower arm of the power module 100. In this embodiment, the first gate driver 200 and the second gate driver 300 are voltage-driven drivers.

[0043] The first switch S1 to the sixth switch S6 constitute the switch group of this embodiment. Figure 2As shown, the first switch S1 is a single-pole double-throw switch, with its fixed end 2 connected to the GH port of the first gate driver 200, one contact 3 of its movable end connected to the independent gate line G1 of transistor Q1, and the other contact 1 of its movable end connected to the common gate line G2 of transistors Q2 to Q4. A resistor R1_dcdc is provided between contact 3 and gate line G1, and a resistor R1_pwr is provided between contact 1 and gate line G2. The second switch S2 is a single-pole double-throw switch, with its fixed end 2 connected to the GL port of the first gate driver 200, one contact 3 of its movable end connected to the independent gate line G1 of transistor Q1, and the other contact 1 of its movable end connected to the common gate line G2 of transistors Q2 to Q4. A resistor R2_dcdc is provided between contact 3 and gate line G1, and a resistor R2_pwr is provided between contact 1 and gate line G2. The third switch S3 is a single-pole, single-throw (SPST) switch, one end of which is connected to gate line G1 and the other end to gate line G2. The fourth switch S4 is a single-pole, double-throw (SPDT) switch, with its fixed terminal 2 connected to the GH port of the second gate driver 300, a contact 3 on its active terminal connected to the independent gate line G3 of transistor Q5, and another contact 1 on its active terminal connected to the common gate line G4 of transistors Q6 through Q8. A resistor R6_dcdc is provided between contact 3 and gate line G3, and a resistor R7_pwr is provided between contact 1 and gate line G4. The fifth switch S5 is a single-pole, double-throw (SPDT) switch. Its fixed terminal 2 is connected to the GL port of the second gate driver 300. One contact 3 of its active terminal is connected to the independent gate line G3 of transistor Q5. The other contact 1 of its active terminal is connected to the common gate line G4 of transistors Q6 through Q8. A resistor R8_dcdc is provided between contact 3 and gate line G3, and a resistor R9_pwr is provided between contact 1 and gate line G4. The sixth switch S6 is a single-pole, single-throw (SPST) switch. One end of the switch is connected to gate line G3 and the other end is connected to gate line G4. Furthermore, the common source line S1 of transistors Q1 through Q4 is connected to the VEE port of the first gate driver 200, and the common source line S2 of transistors Q5 through Q8 is connected to the VEE port of the second gate driver 300.

[0044] By such configuration, the switches of the switch group are controlled as shown in Table 1 below, so that the power module 100 can be switched between the first conduction mode and the second conduction mode.

[0045] Table 1 Switch group operation table

[0046]

[0047] It should be noted that those skilled in the art will appreciate that the gate resistor structure must be changed according to the selected mode.

[0048] The following, combined Figure 3 The gate control circuit 10 ′ for controlling the power module 100 of the first embodiment will be described.

[0049] Example 3

[0050] like Figure 3 As shown, the gate control circuit 10' includes a power module 100, a first gate driver 200' for driving transistors Q1-Q4 of each upper arm of the power module 100, and a second gate driver 300' for driving transistors Q5-Q8 of each lower arm of the power module 100. In this embodiment, the first gate driver 200' and the second gate driver 300' are current-driven drivers.

[0051] The first switch S1 and the second switch S2 constitute the switch group of this embodiment. Specifically, one end of the first switch S1 is connected to port G1 of the first gate driver 200', and the other end is connected to the common gate line G2 of transistors Q2 through Q4. One end of the second switch S2 is connected to port G1 of the second gate driver 300', and the other end is connected to the common gate line G4 of transistors Q6 through Q8. Furthermore, gate line G1 is connected to port G1 of the first gate driver 200', and gate line G3 is connected to port G1 of the second gate driver 300'.

[0052] With such a configuration, by switching the switches of the switch group as shown in Table 2 below, the power module 100 can be switched between the first conduction mode and the second conduction mode.

[0053] Table 2 Switch group operation table

[0054]

[0055] It should be noted that the current-driven gate driver in this embodiment is conceptually similar to a simplified gate resistor switch, with the current level and waveform adjusted according to the selected mode.

[0056] In addition, another embodiment of the power module provided by the present invention is as follows: Figure 4 As shown, the marked Figure 1 Identical reference numerals denote the same meanings, and this power module has completely separate circuits, but uses the same substrate and housing as the power module of the previous embodiment. Therefore, this power module generally integrates two sub-circuits using different chip technologies or the same technology into a single power module with independent interfaces.

[0057] In summary, the technical solution according to the present invention has the following technical effects:

[0058] (1) It is highly cost-effective due to its high degree of integration.

[0059] (2) It can reduce material costs.

[0060] (3) It is possible to save many parts in the integrated components.

[0061] (4) A higher packaging density can be achieved.

[0062] (5) The present invention is not limited to electric vehicles, but is also applicable to all power electronics applications integrating different systems in various fields (for example, medical systems, home applications, etc.).

[0063] (6) The present invention is not limited to the semiconductor technologies described above (SiC MOSFET, Si IGBT, GaN, etc. are widely applicable).

[0064] (7) This can bring high benefits to customers.

[0065] It is understood that the structures shown in the drawings are for illustration only and may include more or fewer modules or components than shown in the drawings, or have configurations different from those shown in the drawings. It is worth noting that when implementing the present invention using embodiments not exhaustively listed in this specification, those skilled in the art may adaptively adjust the structure, position, or functional arrangement of the relevant components.

[0066] It should be understood that, where technically feasible, the technical features listed above for different embodiments may be combined with each other to form additional embodiments within the scope of the present invention. In addition, the specific examples and embodiments described herein are non-limiting, and the structures, dimensions, and materials described above may be modified accordingly without departing from the scope of protection of the present invention.

[0067] In this application, the use of disjunctive conjunctions is intended to include conjunctions. The use of definite or indefinite articles is not intended to indicate cardinality. Specifically, reference to "the" object or "a" and "an" objects is intended to indicate a possible one of a plurality of such objects. In addition, the conjunction "or" may be used to convey simultaneous features, rather than mutually exclusive solutions. In other words, the conjunction "or" should be understood to include "and / or". The term "include" is inclusive and has the same scope as "comprise".

[0068] The above embodiments, particularly any "preferred" embodiments, are possible examples of implementations and are presented merely for a clear understanding of the principles of the present invention. Many changes and modifications may be made to the above embodiments without departing substantially from the spirit and principles of the technology described herein. All modifications are intended to be included within the scope of this disclosure.

[0069] All documents mentioned in this specification are incorporated herein by reference, as if each document were incorporated herein by reference in its entirety.

[0070] In addition, it should be understood that after reading the above description of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms also fall within the scope of protection of the present invention.

Claims

1. A power module, characterized in that: The power module includes two or more bridge arm groups connected in parallel, and the power module has a first conduction mode and a second conduction mode, wherein in the first conduction mode, the two or more bridge arm groups are all turned on; in the second conduction mode, some of the two or more bridge arm groups are turned on, and the other part of the bridge arm groups are turned off.

2. The power module according to claim 1, wherein: Each of the two or more bridge arm groups includes a first power switching element as an upper arm and a second power switching element as a lower arm. The bridge arm group that is turned on in the second conduction mode is the first bridge arm group, and the bridge arm group that is turned off in the second conduction mode is the second bridge arm group. The gates of all the first power switching elements of the first bridge arm group are connected to the first gate line, the gates of all the first power switching elements of the second bridge arm group are connected to the second gate line, the gates of all the second power switching elements of the first bridge arm group are connected to the third gate line, and the gates of all the second power switching elements of the second bridge arm group are connected to the fourth gate line.

3. The power module according to claim 2, wherein: There is one first bridge arm group.

4. The power module according to claim 3, wherein: There are two or more second bridge arm groups.

5. The power module according to any one of claims 2 to 4, characterized in that: The first power switching element is any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET, and the second power switching element is any one or more combinations of Si IGBT, SiC JFET, SiC MOSFET and GaN FET.

6. A gate control circuit, characterized in that: The gate control circuit includes: The power module according to any one of claims 2 to 5; a first gate driver, configured to drive the first power switching element; a second gate driver, configured to drive the second power switching element; and a switch group, arranged between the power module, the first gate driver and the second gate driver, Wherein, in the first conduction mode, the first gate driver is connected to the first gate line and the second gate line, and the second gate driver is connected to the third gate line and the fourth gate line through the switch group; In the second conduction mode, the first gate driver is connected to the first gate line and disconnected from the second gate line through the switch group, and the second gate driver is connected to the third gate line and disconnected from the fourth gate line.

7. The gate control circuit according to claim 6, wherein: The first gate driver and / or the second gate driver are voltage-driven drivers.

8. The gate control circuit according to claim 7, characterized in that: The first gate driver and the second gate driver are voltage-driven drivers, and the switch group includes: a first switch, configured to selectively connect a port of the first gate driver to the first gate line or the second gate line; a second switch, configured to selectively connect the other port of the first gate driver to the first gate line or the second gate line; a third switch connected between the first gate line and the second gate line; a fourth switch, configured to selectively connect the port of the second gate driver to the third gate line or the fourth gate line; a fifth switch, configured to selectively connect the other port of the second gate driver to the third gate line or the fourth gate line; and a sixth switch connected between the third gate line and the fourth gate line, In the first conduction mode, the first switch connects a port of the first gate driver to the second gate line, the second switch connects the other port of the first gate driver to the second gate line, the third switch connects the first gate line and the second gate line, the fourth switch connects a port of the second gate driver to the fourth gate line, the fifth switch connects the other port of the second gate driver to the fourth gate line, and the sixth switch connects the third gate line and the fourth gate line; In the second conduction mode, the first switch connects the port of the first gate driver to the first gate line, the second switch connects the other port of the first gate driver to the first gate line, the third switch disconnects the first gate line from the second gate line, the fourth switch connects the port of the second gate driver to the third gate line, the fifth switch connects the other port of the second gate driver to the third gate line, and the sixth switch disconnects the third gate line from the fourth gate line.

9. The gate control circuit according to claim 6, wherein: The first gate driver and / or the second gate driver is a current-driven driver.

10. The gate control circuit according to claim 9, characterized in that: The first gate driver and the second gate driver are current-driven drivers, the first gate line is connected to a port of the first gate driver, the third gate line is connected to a port of the second gate driver, and the switch group includes: a first switch, one end of which is connected to the port of the first gate driver, and the other end of which is connected to the second gate line; and a second switch, one end of which is connected to the port of the second gate driver, and the other end of which is connected to the fourth gate line; In the first conduction mode, the first switch connects the port of the first gate driver to the second gate line, and the second switch connects the port of the second gate driver to the fourth gate line; In the second conduction mode, the first switch disconnects the port of the first gate driver from the second gate line, and the second switch disconnects the port of the second gate driver from the fourth gate line.

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