Post-manufacturing correction method based on chalcogenide phase change material
By depositing multi-layer films on silicon photonic devices and applying electrical pulse Joule heating, modulating the refractive index of sulfur-based phase change materials, the problems of high cost, complex process and difficulty in CMOS integration in the prior art are solved, and low-loss and high-precision optical signal phase adjustment is achieved, which is suitable for large-scale applications of optical communication interconnection.
Patent Information
- Application Number
- CN202510712415.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-30
- Publication Date
- 2025-08-19
AI Technical Summary
The prior art has problems such as high cost, complex processes, and difficulty in compatible with CMOS processes in the manufacturing of silicon photonic devices, resulting in limited large-scale application of optical communication interconnection.
By adopting a post-manufacturing correction method based on sulfur-based phase change materials, a multi-layer film, including a sulfur-based phase change material film, an isolation layer, a resistance heating layer, an adhesion layer and a metal electrode layer are deposited on a silicon photonic device, and a Joule heating is generated by applying electric pulses to modulate the refractive index of the sulfur-based phase change material above the silicon waveguide to achieve accurate adjustment of the optical signal phase.
It realizes low loss and high precision optical signal phase adjustment, with a phase adjustment range of 0 to π, which is suitable for CMOS integration, reduces production costs, and is suitable for industrial production and productization.
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Figure CN120507833A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of optical communications and relates to a post-manufacturing correction method based on chalcogenide phase change materials. Background Art
[0002] Optical interconnection is a high-density, low-power optical data transmission system based on silicon photonics technology. Its large-scale application is generally implemented in an array architecture. This array-based feature places stringent requirements on the yield control of individual devices. However, in industrial-grade production, standardized process nodes (such as the commercial 130nm CMOS process) are often used to balance cost and yield, which inevitably introduces manufacturing errors. For example, the phase error of the Mach-Zehnder interferometer waveguide exhibits a nonlinear cumulative effect in the cascade architecture of the optical neural network, resulting in weight distortion, abnormal signal attenuation, and training failure. These uncontrollable process errors have become the core bottleneck restricting the large-scale application of optical communication interconnection. To address the performance challenges brought about by the manufacturing errors of silicon photonic devices, academia and industry have conducted research on post-manufacturing processing pruning technology.
[0003] The existing process correction method is mainly to modify the refractive index of the waveguide core or cladding by adjusting the refractive index. For example, by irradiating the waveguide surface with a femtosecond laser, the local silicon changes from a crystalline phase to an amorphous phase, thus achieving permanent refractive index modulation. However, its trimming accuracy is limited by optical diffraction. In addition, laser processing depends on the platform, which is not convenient for chip testing. Through the coordinated correction of germanium (Ge) ion implantation and rapid thermal annealing, the effective refractive index of the waveguide in the implanted area is changed, but the doping process is relatively complicated in the manufacturing process. In addition, the material quality is poor after silicon recrystallization, and the extinction ratio will be reduced. The electron beam induced strain method uses electron beam irradiation to generate core strain to achieve cladding densification, but this method has high operating costs and time strain relaxation.
[0004] This shows that existing technologies have problems such as complex processes, high costs, and incompatibility with CMOS processes, which limits the feasibility of post-manufacturing trimming of silicon photonic chips on a large scale. Summary of the Invention
[0005] In response to the above defects or improvement needs of the existing technology, the present invention provides a post-manufacturing correction method based on sulfur-based phase change materials, thereby solving the technical problems of the existing technology such as high cost, large loss and difficulty in CMOS integration.
[0006] To achieve the above object, the technical solution adopted by the present invention is:
[0007] A post-manufacturing correction method based on chalcogenide phase change materials, wherein the post-manufacturing correction method is performed on a conventional silicon photonic device, comprising the following steps:
[0008] In the first step, the surface of a conventional silicon photonic device is used as a substrate layer, single-crystal silicon material is deposited on the substrate layer, and a trench structure is etched on the single-crystal silicon material to form a silicon waveguide;
[0009] In the second step, multiple layers are sequentially deposited on the silicon waveguide, including a chalcogenide phase change material film, an isolation layer, a resistive heating layer, an adhesion layer, and a metal electrode layer.
[0010] In the third step, an electric pulse is applied to the resistive heating layer to generate Joule heating, which fine-tunes the refractive index of the chalcogenide phase change material film above the silicon waveguide, changes the effective refractive index of the waveguide, and modulates the phase of the optical signal. The phase adjustment range is 0 to π.
[0011] The method can be used to adjust the phase of an optical signal and correct the phase error introduced during the manufacture of silicon photonic devices. The resolution of the phase adjustment is within 1%, and the device insertion loss is less than 0.42dB.
[0012] Furthermore, the thickness of the metal electrode layer is 20 nm to 200 nm, and the metal electrode layer is a thin film of Ag, Cu, Pt or Au.
[0013] Furthermore, the thickness of the adhesion layer is 10 nm, and the adhesion layer is a Ti or TiN thin film.
[0014] Furthermore, the thickness of the resistance heating layer is 10 nm-400 nm, and the resistance heating layer is indium tin oxide (ITO), indium oxide, graphene, fluorine-doped tin oxide (FTO) or hydrogen-doped indium oxide (IHO) thin film.
[0015] Furthermore, the thickness of the isolation layer is 10nm-200nm, and the isolation layer is Al2O3 or SiN x , SiO2 film.
[0016] Furthermore, the thickness of the chalcogenide phase change material film is 10nm-100nm. The chalcogenide phase change material film is a multinary chalcogenide phase change material or a doped compound formed by doping a multinary chalcogenide phase change material with impurities. The multinary chalcogenide phase change material is Sb2S3, Sb2Se3, Ge2Sb2Se2Te5, or Ge2Sb2Te5, and the impurities are C, N, O, Ag, or Cu.
[0017] Furthermore, a silicon waveguide is formed by depositing a single-crystal silicon material on the substrate and etching a trench structure in the single-crystal silicon material. The trench structure has a width of 1 μm to 5 μm and a height of 40 nm to 220 nm. The resulting silicon waveguide has a width of 500 nm to 3 μm and a device length of 10 μm to 100 μm.
[0018] Furthermore, in the first step, the etching is electron beam lithography and plasma etching.
[0019] Furthermore, in the second step, the deposition in the preparation process is chemical vapor deposition, physical vapor deposition, electron beam evaporation coating, pulsed laser deposition, atomic layer deposition, DC magnetron sputtering or radio frequency magnetron sputtering.
[0020] The beneficial effects of the present invention are:
[0021] (1) When the correction method of the present invention is used, an electric pulse is applied to the resistive heating layer to generate Joule heating, modulating the refractive index of the chalcogenide phase change material above the silicon waveguide, changing the effective refractive index of the waveguide, and thereby adjusting the phase of the optical signal, thereby achieving post-manufacturing correction of the optical phase deviation. The phase adjustment range is 0 to π, the phase adjustment accuracy is within 1%, and the insertion loss is less than 0.42dB.
[0022] (2) Sulfur-based phase change materials have stable physical and chemical properties at room temperature, so phase adjustment is non-volatile and can be maintained stably for many years. Furthermore, thin film preparation methods are simple and can be easily deposited onto silicon photonic devices by sputtering or evaporation. The correction method of the present invention has the characteristics of low insertion loss, high correction accuracy, and multi-level trimming. Its simple structure can reduce production costs, is suitable for CMOS integration, and is easily compatible with modern semiconductor process production lines, making it suitable for industrial production and productization.
[0023] (3) Existing post-manufacturing correction technologies have high process costs, complex procedures, low correction accuracy, and are unable to be integrated with CMOS processes, making them unsuitable for large-scale manufacturing correction. The correction method of the present invention uses a thin film deposition process, which is convenient for CMOS integration process preparation. The phase shift range of the present invention is within the range of 0 to π, which can meet the needs of phase correction and realize large-scale post-manufacturing trimming of silicon photonic chips. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 This is a substrate image provided by the present invention that is not etched using a post-manufacturing correction method based on a chalcogenide phase change material;
[0025] Figure 2 This is a top view of a post-manufacturing correction method based on a chalcogenide phase change material provided by the present invention after etching;
[0026] Figure 3 This is a cross-sectional view after etching based on a post-manufacturing correction method of a chalcogenide phase change material provided by the present invention;
[0027] Figure 4 This is a cross-sectional view of a chalcogenide phase change material thin film deposited using a post-fabrication correction method based on chalcogenide phase change material provided by the present invention;
[0028] Figure 5This is a cross-sectional view of a post-manufacturing correction method based on a chalcogenide phase change material provided by the present invention after depositing an isolation layer;
[0029] Figure 6 This is a cross-sectional view of a post-manufacturing correction method based on a chalcogenide phase change material provided by the present invention after depositing a resistive heating layer;
[0030] Figure 7 This is a cross-sectional view of a post-manufacturing correction method based on a chalcogenide phase change material provided by the present invention after depositing an adhesion layer;
[0031] Figure 8 This is a cross-sectional view of a metal electrode layer deposited using a post-manufacturing correction method based on a chalcogenide phase change material provided by the present invention;
[0032] Figure 9 This is a schematic diagram of a phase-corrected integrated photonic device prepared by a post-fabrication correction method based on a chalcogenide phase change material provided by the present invention;
[0033] Figure 10 The present invention provides a method for applying electric pulses to the resistive heating layer to generate Joule heating, which can cause the chalcogenide phase change material in the intermediate layer to undergo a phase change, change the effective refractive index of the waveguide, achieve the correction of the optical phase difference, and gradually balance the optical power of the two output ports of the MZI;
[0034] Figure 11 The present invention provides that before correction, the power output from the two ports of the five Mach Zehnder interferometer (MZI) samples at a wavelength of 1550 nm has obvious differences;
[0035] Figure 12 According to the present invention, after correction is completed, the power output from two ports of five Mach Zehnder interferometer (MZI) samples at a wavelength of 1550 nm is the same.
[0036] In the figure: 100 substrate; 101 chalcogenide phase change material film; 102 isolation layer; 103 resistive heating layer; 104 adhesion layer; 105 metal electrode layer; 106 silicon waveguide; 107 waveguide; 108 1X2 beam splitter; 109 first modulation arm; 110 second modulation arm; 111 multi-layer deposition layer; 112 2X2 beam splitter; 113 first waveguide structure; 114 second waveguide structure; 201 left electrode layer; 202 right electrode layer. DETAILED DESCRIPTION
[0037] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
[0038] This method modulates the refractive index of the chalcogenide phase-change material above the silicon waveguide by applying electrical pulses to the resistive heating layer. Controlling the pulse width and amplitude of the electrical signal triggers the reversible transition between the crystalline and amorphous states of the material. Due to the significant refractive index difference (Δn>0.5) between the two states, precise modulation of the effective refractive index of the optical waveguide can be achieved. Chalcogenide phase-change materials, with their wide-bandgap transparency and high refractive index difference, offer advantages in post-manufacturing correction processes, such as low loss, high precision, a wide correction range, and low cost. Furthermore, their thin-film deposition method is compatible with CMOS processes. Therefore, correction methods based on chalcogenide phase-change materials and resistive heating layers offer significant advantages in post-manufacturing correction of silicon photonic devices.
[0039] Figure 1 This is a substrate diagram without etching according to a post-manufacturing correction method based on a chalcogenide phase change material provided by an embodiment of the present invention; a single crystal silicon material is deposited on the substrate 100, and etching is performed on the single crystal silicon material to form a waveguide structure 101, as shown in FIG. Figure 2 The top view of the waveguide structure after etching is shown in FIG. Figure 3 The cross-sectional view of the waveguide structure after etching is shown in FIG. Figure 4 As shown, a 10nm-100nm thick chalcogenide phase change material film 102 is deposited on the waveguide structure 101; Figure 5 As shown, a 10nm-200nm isolation layer 103 is deposited on the chalcogenide phase change material film 102; Figure 6 As shown, a 10nm-400nm resistance heating layer is deposited on the isolation layer 103 as a heater; Figure 7 As shown, a 10 nm adhesion layer is deposited on the resistive heating layer 104; Figure 8As shown, a 20nm-200nm thick metal electrode layer is deposited above the adhesion layer 105. Etching is performed using electron beam lithography or ion-coupled plasma etching, while deposition can be performed using chemical vapor deposition, physical vapor deposition, electron beam evaporation, pulsed laser deposition, atomic layer deposition, DC magnetron sputtering, or radio frequency magnetron sputtering. Specifically, ion-coupled plasma etching excites a gas using a high-frequency electric field to generate a plasma. The ionized high-energy ions, accelerated by the electric field, bombard the material surface, achieving precise etching through a combination of physical collision forces and chemical reactions. Chemical vapor deposition uses microwave or radio frequency energy to dissociate a gas precursor, stimulating a highly active plasma on the substrate surface. Through chemical reactions, atomically thin films are controllably deposited on the substrate. In magnetron sputtering, the DC mode uses orthogonal electromagnetic fields on the target surface to constrain the trajectory of secondary electrons, enhancing gas ionization efficiency and enabling high-speed sputtering of conductive materials. The radio frequency mode uses an alternating electric field to create a self-bias on the insulating target surface, promoting ion bombardment and producing a sputtering effect, thereby supporting stable film formation of insulating materials. The three processes are based on the physical mechanisms of ion bombardment-reaction synergy, plasma chemical deposition and magnetic field regulation of electron motion to achieve surface processing of different materials.
[0040] like Figure 8 As shown, a post-fabrication modification method based on chalcogenide phase change materials includes a substrate 100, a single-crystal silicon material deposited above the substrate, and etching the single-crystal silicon material to form a silicon waveguide 101, a chalcogenide phase change material thin film 102, an isolation layer 103, a resistive heating layer 104, an adhesion layer 105, and a metal electrode layer 106. The chalcogenide phase change material thin film 102 exhibits non-volatile phase transition properties and can switch phases by applying different heating temperatures. The waveguide structure has a width of 500 nm to 3 μm, and the etching depth is 40 nm to 220 nm. The thickness of the chalcogenide phase change material thin film 102 is 10 nm to 100 nm. The chalcogenide phase change material thin film 102 is a multinary chalcogenide phase change material or a doped compound formed by doping a multinary chalcogenide phase change material with impurities. The multi-sulfur phase change material is Sb2S3, Sb2Se3, Ge2Sb2Se2Te5 or Ge2Sb2Te5, and the impurities are C, N, O, Ag or Cu. The thickness of the isolation layer 103 is 10nm-200nm, and the isolation layer 103 is SiO2, Al2O3 or SiN xfilm. The thickness of the resistive heating layer 104 is 10nm-400nm, and the resistive heating layer 104 is an indium tin oxide (ITO), indium oxide, graphene, fluorine-doped tin oxide (FTO) or hydrogen-doped indium oxide (IHO) film. The thickness of the adhesion layer 105 is 10nm, and the adhesion layer 105 is a Ti or TiN film. The thickness of the metal electrode layer 106 is 20nm-200nm, and the metal electrode layer 106 is an Ag, Cu, Pt or Au film. During post-manufacturing, the state of the sulfur-based phase change material film 102 is controlled by applying an external electrical signal to the left electrode layer and the right electrode layer, and the effective refractive index of the waveguide is modulated to achieve correction and tuning of the optical signal phase. The phase change mechanism of the sulfur-based phase change material can be a phase change of the sulfur-based phase change material caused by thermal effects, or it can be a disordered state inside the sulfur-based phase change material due to instantaneous high temperature and quenching. Under normal temperature conditions, the phase correction effect is non-volatile and can remain unchanged all year round, and there is no need to use an external power supply to maintain the phase adjustment effect. The phase change speed of the chalcogenide phase change material film 102 can reach sub-microsecond level.
[0041] In the application of the integrated photonic device field in this embodiment, the traditional silicon photonic device is a silicon-based 1×2 Mach Zehnder interferometer (MZI) structure, and its structure is as follows: Figure 10 As shown in the figure. An input waveguide 107 is used to input an optical signal. The input end of a 1X2 beam splitter 108 is connected to waveguide 107. The 1X2 beam splitter 108 is used to split the optical signal into two beams according to a certain ratio. Two MZI modulation units are connected to the 1X2 beam splitter 107. The MZI modulation unit includes two modulation arms 109 and 110. Multiple layers 111 (a chalcogenide phase change material film 102, an isolation layer 103, a resistive heating layer 104, an adhesion layer 105, and finally a metal electrode layer 106) are deposited on both arms 109 and 110 to form a resistive structure. The resistive heating layer in arm 110 is used to balance insertion loss. Electric pulses applied through the metal electrode layer 106 are transmitted to the microheater resistive heating layer 104, generating Joule heating. This causes a phase transition in the chalcogenide phase change material film, changes the effective refractive index of the waveguide, and adjusts the phase of the optical signal in waveguide 101. The phase adjustment resolution reaches 1%. After correction, the optical power difference between the two output ports is less than 0.1dB.
[0042] According to this embodiment, the modulated light is transmitted to the 2X2 beam splitter 112 through the modulation arm 109, and interferes with the unchanged optical signal from the 110 arm. The interfered optical signal is split into two beams by the 2X2 beam splitter 112 and then output through the waveguide structures 113 and 114.
[0043] Figure 10The embodiment of the present invention provides a method for applying electric pulses to the resistive heating layer to generate Joule heating, which can cause the chalcogenide phase change material of the intermediate layer material to undergo a phase change, change the effective refractive index of the waveguide, achieve the correction of the optical phase difference, and gradually balance the optical powers of the two output ports of the MZI. Figure 11 According to an embodiment of the present invention, before correction, the power output from the two ports of the five Mach Zehnder interferometer (MZI) samples at a wavelength of 1550 nm was significantly different. Figure 12 According to an embodiment of the present invention, after correction is completed, the power output from two ports of five Mach Zehnder interferometer (MZI) samples at a wavelength of 1550 nm is the same.
[0044] The present invention provides the following examples based on the multi-layer deposition in the post-manufacturing correction method of the chalcogenide phase change material:
[0045] Example 1
[0046] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 1 μm and an etching depth of 40 nm;
[0047] Deposit a 10nm thick Sb2S3 film on top of the waveguide;
[0048] A 10 nm thick Al2O3 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0049] A 10 nm thick ITO film is deposited on the isolation layer as a resistive heating layer;
[0050] A 10 nm thick Ti layer was deposited on both sides of the resistive heating layer as an adhesion layer;
[0051] A 20 nm thick Au layer was deposited on top of the adhesion layer as an electrode;
[0052] Example 2
[0053] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 1 μm and an etching depth of 80 nm;
[0054] Deposit a 50nm thick Sb2S3 film on top of the waveguide;
[0055] A 100nm thick Al2O3 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0056] A 200 nm thick IHO film was deposited on top of the isolation layer as a resistive heating layer;
[0057] A 10 nm thick Ti layer was deposited on both sides of the resistive heating layer as an adhesion layer;
[0058] A 100 nm thick Cu layer was deposited on top of the adhesion layer as an electrode;
[0059] Example 3
[0060] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 1 μm and an etching depth of 80 nm;
[0061] Deposit a 100nm thick Sb2S3 film on top of the waveguide;
[0062] A 200nm thick SiO2 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0063] A 270nm thick ITO film is deposited on the isolation layer as a resistive heating layer;
[0064] A 10 nm thick Ti layer was deposited on both sides of the microheater as an adhesion layer;
[0065] A 200 nm thick Ag layer was deposited on top of the adhesion layer as an electrode;
[0066] Example 4
[0067] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 500 nm and a depth of 110 nm;
[0068] Deposit an 80nm thick Sb2Se3 film on top of the waveguide;
[0069] A 150nm thick Al2O3 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0070] A 400nm thick ITO film was deposited on top of the isolation layer as a microheater;
[0071] A 10nm thick Ti layer is deposited on both sides of the microheater as an adhesion layer
[0072] A 150 nm thick Pt layer was deposited on top of the adhesion layer as an electrode;
[0073] Example 5
[0074] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 500 nm and a depth of 110 nm;
[0075] Deposit an 80nm thick Sb2Se3 film on top of the waveguide;
[0076] A 150nm thick Al2O3 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0077] A 200 nm thick IHO film was deposited on top of the isolation layer as a resistive heating layer;
[0078] A 10 nm thick Ti layer was deposited on both sides of the resistive heating layer as an adhesion layer;
[0079] A 100 nm thick Au layer was deposited on top of the adhesion layer as an electrode;
[0080] Example 6
[0081] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 500 nm and a depth of 110 nm;
[0082] Deposit an 80nm thick Sb2Se3 film on top of the waveguide;
[0083] A 150nm thick SiN layer is deposited on top of the chalcogenide phase change material. x The film acts as an isolation layer;
[0084] A 200 nm thick IHO film was deposited on top of the isolation layer as a resistive heating layer;
[0085] A 10 nm thick Ti layer was deposited on both sides of the resistive heating layer as an adhesion layer;
[0086] A 100 nm thick Au layer was deposited on top of the adhesion layer as an electrode;
[0087] Example 7
[0088] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 500 nm and a depth of 110 nm;
[0089] Deposit an 80nm thick Sb2Se3 film on top of the waveguide;
[0090] A 150nm thick SiO2 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0091] A 200 nm thick IHO film was deposited on top of the isolation layer as a microheater;
[0092] A 10 nm thick Ti layer was deposited on both sides of the microheater as an adhesion layer;
[0093] A 100 nm thick Au layer was deposited on top of the adhesion layer as an electrode;
[0094] Example 8
[0095] A single crystal silicon material is deposited on the substrate, and a trench structure is etched on the single crystal silicon material to form a silicon waveguide, wherein the trench structure has a width of 3 μm and a depth of 220 nm;
[0096] Deposit a 30nm thick Ge2Sb2Se2Te5 film on top of the waveguide;
[0097] A 200nm thick Al2O3 film is deposited on top of the chalcogenide phase change material as an isolation layer;
[0098] A 400 nm thick ITO film is deposited on the isolation layer as a resistive heating layer;
[0099] A 10 nm thick Ti layer was deposited on both sides of the resistive heating layer as an adhesion layer;
[0100] A 100 nm thick Au layer was deposited on top of the adhesion layer as an electrode.
[0101] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.
Claims
1. A post-manufacturing correction method based on chalcogenide phase change materials, characterized in that: The following steps are involved: In the first step, the surface of the silicon photonic device is used as a substrate layer, single-crystal silicon material is deposited on the substrate layer, and a trench structure is etched on the single-crystal silicon material to form a silicon waveguide; In the second step, multiple layers are deposited on the silicon waveguide in sequence, including a chalcogenide phase change material film, an isolation layer, a resistive heating layer, an adhesion layer, and a metal electrode layer from bottom to top. In the third step, an electric pulse is applied to the resistive heating layer to generate Joule heating, which fine-tunes the refractive index of the chalcogenide phase change material film above the silicon waveguide, changes the effective refractive index of the waveguide, and modulates the phase of the optical signal. The phase adjustment range is 0 to π.
2. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: The post-manufacturing correction method can be used to adjust the phase of an optical signal and correct the phase error introduced during the manufacturing of silicon photonic devices. The resolution of the phase adjustment is within 1%, and the device insertion loss is less than 0.42dB.
3. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: The thickness of the metal electrode layer is 20nm-200nm, and the metal electrode layer is a Ag, Cu, Pt or Au thin film.
4. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: The thickness of the adhesion layer is 10 nm, and the adhesion layer is a Ti or TiN thin film.
5. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: The thickness of the resistance heating layer is 10nm-400nm, and the resistance heating layer is indium tin oxide ITO, indium oxide, graphene, fluorine-doped tin oxide (FTO) or hydrogen-doped indium oxide IHO film.
6. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: The thickness of the isolation layer is 10nm-200nm, and the isolation layer is Al2O3 or SiN x , SiO2 film.
7. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: The thickness of the sulfide phase change material film is 10nm-100nm. The sulfide phase change material film is a multi-component sulfide phase change material or a doped compound formed by doping impurities into the multi-component sulfide phase change material.
8. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 7, characterized in that: The multi-element sulfur phase change material is Sb2S3, Sb2Se3, Ge2Sb2Se2Te5 or Ge2Sb2Te5, and the impurity is C, N, O, Ag or Cu.
9. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: A silicon waveguide is formed by depositing a single-crystal silicon material on a substrate and etching a groove structure on the single-crystal silicon material. The groove structure has a width of 1μm-5μm and a height of 40nm-220nm. The width of the formed silicon waveguide is 500nm-3μm; the device length is 10μm-100μm.
10. The post-manufacturing correction method based on chalcogenide phase change materials according to claim 1, characterized in that: In the first step, the etching is electron beam lithography and plasma etching; in the second step of the preparation process, the deposition is chemical vapor deposition, physical vapor deposition, electron beam evaporation coating, pulsed laser deposition, atomic layer deposition, DC magnetron sputtering or radio frequency magnetron sputtering.
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