Substrate processing apparatus

Abstract

A substrate processing apparatus processes a substrate by supplying a chemical solution to the substrate. The substrate processing apparatus includes a target member having a hydrophobized surface that is a hydrophobized surface. The hydrophobized surface is a surface exposed to first mist, which is mist generated from the chemical solution, or mist generated from the chemical solution, and is a surface on which contact with the chemical solution or droplets of the chemical solution is not assumed.

Description

Technical Field

[0001] The present invention relates to a substrate processing device. Background Art

[0002] Among the substrate processing apparatuses, there is a cluster-type substrate processing apparatus that processes substrates one by one. The cluster-type substrate processing apparatus supplies a chemical solution to the substrate to process the substrate. For example, the cluster-type substrate processing apparatus includes a chamber, a transport robot that carries the substrate into the chamber, and a spray nozzle that sprays the chemical solution toward the substrate in the chamber. The chemical solution is supplied to the substrate by spraying the chemical solution from the spray nozzle toward the substrate. For example, the cluster-type substrate processing apparatus supplies SPM (Sulfuric acid hydrogen peroxide mixture) to the substrate as a chemical solution. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) (sulfuric acid hydrogen peroxide) (for example, refer to Japanese Patent Gazette No. 2023-140910). The resist film can be removed from the substrate W by SPM.

[0003] In a cluster-type substrate processing apparatus, mist originating from the chemical liquid may be generated from the chemical liquid during the processing of the substrate (for example, see Japanese Patent Application Laid-Open No. 2023-140910).

[0004] As a result, the atmosphere in the chamber may become a chemical liquid atmosphere due to mist derived from the chemical liquid. In addition, the chemical liquid mist may be mixed into the exhaust gas exhausted from the chamber. Summary of the Invention

[0005] However, when mist from the chemical solution adheres to the surfaces of components constituting the substrate processing apparatus and dries, it may turn into particles that contaminate the substrate.

[0006] An object of the present invention is to provide a substrate processing apparatus that is less likely to generate particles.

[0007] One aspect of the present invention provides a substrate processing apparatus for processing a substrate by supplying a chemical liquid to the substrate. The substrate processing apparatus includes a target component. The target component has a hydrophobized surface. The hydrophobized surface is exposed to a first mist generated from the chemical liquid or mist generated from the chemical liquid, and is not expected to come into contact with the chemical liquid or its droplets.

[0008] In one embodiment, the substrate processing apparatus further comprises a processing chamber, a gate, an air supply mechanism, a rectifying plate, a substrate holding portion, a substrate rotating portion, a spray nozzle, a liquid receiving portion, a first exhaust duct, a second exhaust duct, an exhaust damper, a liquid discharge pipe, a drain box, and an exhaust pipe. The processing chamber has an opening. The substrate is carried into the processing chamber through the opening. The gate opens and closes the opening. The air supply mechanism supplies air into the processing chamber from above the processing chamber. The rectifying plate rectifyes the air supplied from the air supply mechanism into the processing chamber. The substrate holding portion holds the substrate horizontally within the processing chamber. The substrate rotating portion rotates the substrate integrally with the substrate holding portion. The spray nozzle sprays the chemical liquid toward the substrate held by the substrate holding portion. The liquid receiving portion surrounds the substrate held by the substrate holding portion and receives the chemical liquid discharged from the substrate. The first exhaust duct discharges the first gas, which is the gas within the processing chamber, to the outside of the processing chamber. The second exhaust duct is arranged outside the processing chamber. The first gas exhausted from the first exhaust duct flows into the second exhaust duct. The exhaust damper adjusts the flow rate of the first gas flowing from the first exhaust duct to the second exhaust duct. The drain pipe discharges the chemical liquid from the inside of the processing chamber to the outside. The drain box stores the chemical liquid discharged from the inside of the processing chamber to the outside through the drain pipe. The exhaust pipe discharges the second gas, which is the gas in the drain box, to the outside of the drain box. The substrate rotating portion includes a drive portion and a cover portion. The drive portion generates a driving force for rotating the substrate and the substrate holding portion integrally. The cover portion covers the drive portion. The hydrophobic surface includes at least one of the inner wall surface of the treatment chamber, the inner surface of the gate, the lower surface of the rectifying plate, the inner surface of the second exhaust duct, the surface of the exhaust damper, the inner surface of the exhaust piping, the outer surface of the cover portion that is located below the liquid receiving portion, and the inner wall surface of the drain box.

[0009] In one embodiment, the hydrophobized surface is processed into a concavo-convex shape that increases a contact angle of fine particles of the chemical solution constituting the first mist or the fog.

[0010] In one embodiment, the chemical solution includes a first chemical solution that is an acidic chemical solution and a second chemical solution that is an alkaline chemical solution. The first mist includes mist generated from the first chemical solution and mist generated from the second chemical solution.

[0011] In one embodiment, the first chemical solution includes sulfuric acid hydrogen peroxide or sulfuric acid, and the second chemical solution includes SC1.

[0012] In one embodiment, the substrate processing apparatus further includes a mist supply unit configured to supply a second mist having a level that does not wet the hydrophobized surface toward the hydrophobized surface.

[0013] In one embodiment, the substrate processing apparatus further includes a water repellent supply unit configured to supply the water repellent toward the hydrophobized surface.

[0014] According to the substrate processing apparatus of the present invention, particles are less likely to be generated. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention.

[0016] Figure 2 It is a cross-sectional view schematically showing the structure of a substrate processing unit included in the substrate processing apparatus according to the first embodiment of the present invention.

[0017] Figure 3 This is another cross-sectional view schematically showing the structure of the substrate processing unit included in the substrate processing apparatus according to the first embodiment of the present invention.

[0018] Figure 4 This is a flowchart showing the operation of the substrate processing apparatus according to the first embodiment of the present invention.

[0019] Figure 5 This is a flowchart showing the flow of substrate processing.

[0020] Figure 6 It is a cross-sectional view showing an example of a hydrophobized surface.

[0021] Figure 7 It is a diagram showing a part of a substrate processing apparatus according to a first embodiment of the present invention.

[0022] Figure 8 It is another diagram showing a part of the substrate processing apparatus according to the first embodiment of the present invention.

[0023] Figure 9 It is a cross-sectional view schematically showing the structure of a substrate processing unit included in a substrate processing apparatus according to a second embodiment of the present invention.

[0024] Figure 10 It is another cross-sectional view schematically showing the structure of the substrate processing unit included in the substrate processing apparatus according to the second embodiment of the present invention. DETAILED DESCRIPTION

[0025] Hereinafter, referring to the accompanying drawings ( Figures 1 to 10) describes an embodiment of the substrate processing apparatus of the present invention. However, the present invention is not limited to the following embodiment and can be implemented in various forms without departing from the gist of the present invention. Furthermore, descriptions of overlapping portions may be omitted as appropriate. In the figures, identical or corresponding portions are denoted by the same reference numerals, and descriptions thereof are not repeated.

[0026] In the substrate processing apparatus of the present invention, various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks can be applied as the "substrates" that are the objects of substrate processing. Below, the embodiments of the present invention are described mainly using a case where a disc-shaped semiconductor wafer is used as the object of substrate processing as an example, but the substrate processing apparatus of the present invention is also applicable to various substrates other than the aforementioned semiconductor wafers. Furthermore, the shape of the substrate is not limited to a disc-shaped one, and the substrate processing apparatus of the present invention is also applicable to substrates of various shapes.

[0027] [First embodiment]

[0028] First, refer to Figure 1 A substrate processing apparatus 100 according to a first embodiment of the present invention will be described. Figure 1 Schematic diagram of the substrate processing apparatus 100 of this embodiment. Figure 1 1 is a schematic top view of a substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 processes the substrate W by supplying a processing liquid to the substrate W. More specifically, the substrate processing apparatus 100 is a cluster-type apparatus that processes substrates W one by one.

[0029] like Figure 1 As shown, the substrate processing apparatus 100 includes a plurality of substrate processing units 2 , a fluid cabinet 100A, a plurality of fluid tanks 100B, a plurality of load ports LP, an indexing robot IR, a central robot CR, and a control device 10 .

[0030] Wafer cassettes CA are placed on the load ports LP. The cassettes CA stack and store one or more substrates W. The cassettes CA can be, for example, FOUPs (Front Opening Unified Pods), SMIFs (Standard Mechanical Interface), or OCs (Open Cassettes).

[0031] The indexing robot IR transfers substrates W between the wafer cassette CA and the central robot CR. The central robot CR transfers substrates W between the indexing robot IR and the substrate processing unit 2. Alternatively, a device structure may be configured such that a stage (transfer unit) for temporarily placing substrates W is provided between the indexing robot IR and the central robot CR, and substrates W are transferred indirectly between the indexing robot IR and the central robot CR via the stage.

[0032] The plurality of substrate processing units 2 form a plurality of towers TW (in Figure 1 The towers TW are arranged so as to surround the central robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 2 (three substrate processing units 2 in this embodiment) stacked one above the other.

[0033] The fluid cabinet 100A stores fluids, including processing liquids. Each fluid box 100B corresponds to one of the multiple towers TW. The processing liquid in the fluid cabinet 100A is supplied to all substrate processing units 2 included in the tower TW corresponding to the fluid box 100B via a particular fluid box 100B.

[0034] The treatment liquid in the fluid cabinet 100A includes a chemical solution and a rinse liquid. In the present embodiment, the treatment liquid in the fluid cabinet 100A includes sulfuric acid (H2SO4), hydrogen peroxide (H2O2), ammonia water (NH4OH) and a rinse liquid. The rinse liquid is, for example, pure water. Pure water can be deionized water (DIW: Deionzied Water). In more detail, the rinse liquid can also be ultrapure water. In addition, the rinse liquid is not limited to pure water. The rinse liquid can also be, for example, carbonated water, electrolyzed ion water, hydrogen-rich water, ozone water, ammonia water or hydrochloric acid water of a diluted concentration (for example, about 0.001 weight % to about 0.01 weight %). However, in the case where the rinse liquid is not pure water, the fluid in the fluid cabinet 100A also includes pure water.

[0035] The substrate processing units 2 each supply a processing liquid to the upper surface of the substrate W to process the substrate W. Specifically, the substrate processing unit 2 supplies a chemical liquid and a rinse liquid to the upper surface of the substrate W to process the substrate W. The chemical liquid supplied to the substrate W may include a first chemical liquid as an acidic chemical liquid and a second chemical liquid as an alkaline chemical liquid. In this embodiment, the substrate processing unit 2 supplies SPM (Sulfuric acid hydrogen peroxide mixture) to the substrate W as the acidic chemical liquid (first chemical liquid) and supplies SC1 to the substrate W as the alkaline chemical liquid (second chemical liquid). SPM is a mixture of sulfuric acid and hydrogen peroxide (sulfuric acid hydrogen peroxide). SC1 is a mixture of ammonia water, hydrogen peroxide, and pure water.

[0036] When SPM is supplied to the upper surface of substrate W, the resist film (organic matter) is stripped from the upper surface of substrate W, and the resist film is removed from the upper surface of substrate W. When SC1 is supplied to the upper surface of substrate W, particles adhering to the upper surface of substrate W are removed. More specifically, the silicon on the main surface of substrate W is oxidized by the hydrogen peroxide contained in SC1, and the silicon oxide is etched by ammonia, and various particles are removed by lift-off. Therefore, SC1 lifts off and removes residual materials and insoluble particles from the resist film.

[0037] The control device 10 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 10 controls the load port LP, the index robot IR, the central robot CR, and the substrate processing unit 2. The control device 10 includes a control unit 11 and a storage unit 12.

[0038] The control unit 11 controls the operation of various components of the substrate processing apparatus 100 based on various information stored in the storage unit 12. The control unit 11 includes, for example, a processor. The control unit 11 may include a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 11 may include a general-purpose computing machine or a dedicated computing unit.

[0039] The storage unit 12 stores various information used to control the operation of the substrate processing apparatus 100. For example, the storage unit 12 stores data and computer programs. The data includes various recipe data. Recipe data, for example, includes process recipes. Process recipes are data that define the steps of substrate processing. Specifically, process recipes define the execution order of a series of processes involved in substrate processing, the content of each process, and the conditions (parameter settings) for each process.

[0040] The storage unit 12 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 12 may also include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 12 may also include removable media.

[0041] Next, refer to Figures 1 to 3 A substrate processing apparatus 100 according to this embodiment will be described. Figure 2 It is a cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing apparatus 100 according to the present embodiment. Figure 3 1 is another cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. Figure 3 The inside of the substrate processing unit 2 is shown as viewed from above.

[0042] like Figure 2As shown, the substrate processing unit 2 includes a processing chamber 201, an air supply mechanism 22, a rectifying plate 23, a substrate holding unit 3, a substrate rotating unit 4, a plurality of ejection nozzles 5, a first nozzle moving unit 61, a second nozzle moving unit 62, a liquid receiving unit 7, a first lifting unit 75a, a second lifting unit 75b, a first exhaust duct 9, and an exhaust damper 91. The substrate processing apparatus 100 further includes a first liquid supply unit 51a, a second liquid supply unit 51b, a third liquid supply unit 51c, a recovery pipe 8a, a first liquid drain pipe 8b, and a second exhaust duct 101.

[0043] The processing chamber 201 has a roughly box-like shape. More specifically, the processing chamber 201 has an upper wall 202, side walls 203, and a bottom wall 204. The processing chamber 201 accommodates a substrate W, a rectifying plate 23, a substrate holding portion 3, a substrate rotating portion 4, a plurality of ejection nozzles 5, a first nozzle moving portion 61, a second nozzle moving portion 62, a liquid receiving portion 7, a first elevator 75a, a second elevator 75b, a first exhaust duct 9, a portion of the exhaust damper 91, a portion of the first liquid supply portion 51a, a portion of the second liquid supply portion 51b, a portion of the third liquid supply portion 51c, a portion of the recovery pipe 8a, and a portion of the first drain pipe 8b. The substrate W is loaded into the processing chamber 201 and processed therein. In other words, substrate processing is performed within the processing chamber 201. The processing chamber 201 is, for example, a chamber.

[0044] The air supply mechanism 22 is disposed outside the processing chamber 201. Specifically, the air supply mechanism 22 is disposed above the processing chamber 201 (upper wall 202), facing the outer surface of the upper wall 202. The air supply mechanism 22 may also be disposed on the outer surface of the upper wall 202. More specifically, the processing chamber 201 has an air supply port 201a that vertically penetrates the upper wall 202, and the air supply mechanism 22 is disposed above the air supply port 201a. The air supply port 201a is formed, for example, at a position that overlaps with the substrate W when viewed from above.

[0045] The air supply mechanism 22 delivers air (air supply) from the top of the processing chamber 201 to the processing chamber 201. In detail, the air supply mechanism 22 sucks the air in the clean room where the substrate processing device 100 is installed, and delivers it to the processing chamber 201 through the air supply port 201a. More specifically, the air supply mechanism 22 has blades, an electric motor and a filter. The blades rotate to suck the air in the clean room and send air toward the air supply port 201a. The electric motor rotates the blades. The filter filters the air delivered by the rotating blades. As a result, the air cleaned by passing through the filter is delivered to the processing chamber 201. The air supply mechanism 22 is, for example, a fan filter unit (FFU).

[0046] The rectifying plate 23 is disposed within the processing chamber 201. Specifically, the rectifying plate 23 is held in a horizontal position. Therefore, the rectifying plate 23 extends along a horizontal plane. For example, the rectifying plate 23 is supported by a side wall 203 of the processing chamber 201. The rectifying plate 23 divides the interior space of the processing chamber 201 into an upper space SP1 and a lower space SP2. The upper space SP1 is located above the lower space SP2.

[0047] More specifically, the rectifying plate 23 is positioned above the processing chamber 201, facing the inner surface of the upper wall 202. Specifically, the rectifying plate 23 is positioned above the components used for substrate processing within the processing chamber 201. Therefore, substrate processing occurs in the lower space SP2. In other words, the lower space SP2 serves as the processing space. The components used for substrate processing include the substrate holder 3, the substrate rotating unit 4, multiple discharge nozzles 5, the first nozzle moving unit 61, the second nozzle moving unit 62, and the liquid receiving unit 7.

[0048] The rectifier plate 23 rectifies the air delivered (air supplied) from the air supply mechanism 22 into the processing chamber 201, generating a downward flow in the lower space SP2 (processing space). Specifically, the rectifier plate 23 has a large number of through-holes 23a. The through-holes 23a penetrate the rectifier plate 23 in the thickness direction of the rectifier plate 23. The large number of through-holes 23a are formed throughout the entire area of ​​the rectifier plate 23. The air delivered from the air supply mechanism 22 passes through the large number of through-holes 23a and flows from the entire area of ​​the rectifier plate 23 into the lower space SP2. As a result, a downward airflow (downflow) is generated in the lower space SP2, flowing downward from the entire area of ​​the rectifier plate 23.

[0049] The electric motor of the air blowing mechanism 22 is controlled by the control device 10 (control unit 11). The control device 10 (control unit 11) may control the electric motor of the air blowing mechanism 22 to always generate a downward flow in the lower space SP2 (processing space).

[0050] The substrate holding portion 3 holds the substrate W horizontally in the processing chamber 201. Specifically, the substrate holding portion 3 holds the substrate W in the lower space SP2 of the processing chamber 201. Figure 2 As shown, the substrate holding portion 3 may include a rotation base 31 and a plurality of chuck members 32 .

[0051] The spin base 31 is generally disk-shaped and supports a plurality of chuck members 32 in a horizontal position. The plurality of chuck members 32 are arranged on the periphery of the spin base 31. The plurality of chuck members 32 clamp the periphery of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 32 is controlled by the control device 10 (control unit 11).

[0052] The substrate rotating unit 4 rotates the substrate W integrally with the substrate holding unit 3. Specifically, the substrate rotating unit 4 rotates the substrate holding unit 3 holding the substrate W about a first rotation axis AX1 extending in the vertical direction. The substrate rotating unit 4 is controlled by the control device 10 (control unit 11).

[0053] Specifically, the first rotation axis AX1 passes through the center of the spin base 31. The plurality of chuck members 32 are arranged so that the center of the substrate W faces the center of the spin base 31. Therefore, the substrate W rotates with the center of the substrate W as the rotation center.

[0054] like Figure 2 As shown, the substrate rotating unit 4 can include a drive unit 41, a shaft 42, and a cover 43. The shaft 42 is coupled to the center of the rotating base 31 and extends downward from the rotating base 31. The drive unit 41 generates a driving force that rotates the substrate W and the substrate holding unit 3 integrally. Specifically, the drive unit 41 rotates the shaft 42 about the first rotation axis AX1. As a result, the rotating base 31 rotates. The drive unit 41 is controlled by the control device 10 (control unit 11). The drive unit 41 includes, for example, an electric motor.

[0055] The cover 43 covers the drive unit 41 and the shaft 42. Specifically, the cover 43 is positioned below the substrate holder 3. Specifically, the cover 43 is positioned below the spin base 31 and extends downward from the spin base 31. The cover 43 is generally cylindrical and surrounds the drive unit 41 and the shaft 42. In other words, the cover 43 surrounds the drive unit 41 and the shaft 42.

[0056] Multiple discharge nozzles 5 are arranged in the lower space SP2. Each of the multiple discharge nozzles 5 discharges a processing liquid toward the upper surface of the substrate W held on the substrate holder 3. As a result, the processing liquid is supplied from the multiple discharge nozzles 5 to the upper surface of the substrate W. In this embodiment, SPM, hydrogen peroxide solution, SC1, and a rinse liquid are discharged toward the substrate W from the multiple discharge nozzles 5 in the order of SPM, hydrogen peroxide solution, rinse liquid, SC1, and rinse liquid.

[0057] More specifically, the plurality of ejection nozzles 5 include a first ejection nozzle 5a, a second ejection nozzle 5b, and a third ejection nozzle 5c.

[0058] The first discharge nozzle 5a discharges an acidic chemical solution (first chemical solution). Specifically, the first discharge nozzle 5a discharges SPM toward the upper surface of the rotating substrate W. SPM is an example of a "first chemical solution." In this embodiment, the first discharge nozzle 5a exclusively discharges SPM and hydrogen peroxide. In other words, the first discharge nozzle 5a selectively discharges one of SPM and hydrogen peroxide.

[0059] More specifically, the first discharge nozzle 5a discharges hydrogen peroxide solution following the SPM. By discharging the SPM onto the upper surface of the rotating substrate W, a liquid film of the SPM is formed on the upper surface of the substrate W. Then, by discharging the hydrogen peroxide solution onto the upper surface of the rotating substrate W, the SPM is discharged from the upper surface of the substrate W, forming a liquid film of hydrogen peroxide solution on the upper surface of the substrate W. In other words, the liquid film on the substrate W is replaced by the liquid film of the hydrogen peroxide solution.

[0060] The discharge of SPM and the discharge of hydrogen peroxide solution from the first discharge nozzle 5a are controlled by the control device 10 (control unit 11). Specifically, the control device 10 (control unit 11) controls the discharge of SPM and the discharge of hydrogen peroxide solution by controlling the first liquid supply unit 51a.

[0061] The first liquid supply unit 51a supplies the first chemical liquid (acidic chemical liquid) to the first ejection nozzle 5a. As a result, the first chemical liquid is ejected from the first ejection nozzle 5a. In this embodiment, the first liquid supply unit 51a exclusively supplies SPM and hydrogen peroxide to the first ejection nozzle 5a. In other words, the first liquid supply unit 51a selectively supplies one of SPM and hydrogen peroxide to the first ejection nozzle 5a. As a result, SPM and hydrogen peroxide are ejected exclusively from the first ejection nozzle 5a. In detail, the first liquid supply unit 51a supplies hydrogen peroxide to the first ejection nozzle 5a following SPM. As a result, hydrogen peroxide is ejected from the first ejection nozzle 5a following SPM.

[0062] like Figure 2 As shown, the first liquid supply part 51a may include a first liquid supply pipe 511a, a first component supply pipe 512a, a second component supply pipe 513a, a first component on-off valve 52a, and a second component on-off valve 53a. A portion of the first liquid supply pipe 511a is housed in the processing chamber 201. The remaining portion of the first liquid supply pipe 511a, the first component supply pipe 512a, the second component supply pipe 513a, the first component on-off valve 52a, and the second component on-off valve 53a are housed in the reference chamber 201. Figure 1 The fluid box 100B is described.

[0063] The first liquid supply pipe 511a, the first component supply pipe 512a, and the second component supply pipe 513a are tubular components that circulate the treatment liquid. Specifically, the first component supply pipe 512a flows sulfuric acid into the first liquid supply pipe 511a. As a result, sulfuric acid is supplied to the first liquid supply pipe 511a. The second component supply pipe 513a flows hydrogen peroxide into the first liquid supply pipe 511a. As a result, hydrogen peroxide is supplied to the first liquid supply pipe 511a. By supplying sulfuric acid and hydrogen peroxide to the first liquid supply pipe 511a, SPM, a mixture of sulfuric acid and hydrogen peroxide, is generated within the first liquid supply pipe 511a. The first liquid supply pipe 511a flows SPM to the first discharge nozzle 5a. As a result, SPM is supplied to the first discharge nozzle 5a and discharged from the first discharge nozzle 5a.

[0064] The first component on-off valve 52a is provided on the first component supply piping 512a. The first component on-off valve 52a controls the start and stop of the flow of sulfuric acid (treatment liquid) through the first component supply piping 512a. Similarly, the second component on-off valve 53a is provided on the second component supply piping 513a. The second component on-off valve 53a controls the start and stop of the flow of hydrogen peroxide solution (treatment liquid) through the second component supply piping 513a.

[0065] Specifically, the first component on-off valve 52a and the second component on-off valve 53a can be opened and closed. When the first component on-off valve 52a is open, sulfuric acid flows through the first component supply pipe 512a, supplying sulfuric acid to the first liquid supply pipe 511a. Similarly, when the second component on-off valve 53a is open, hydrogen peroxide flows through the second component supply pipe 513a, supplying hydrogen peroxide to the first liquid supply pipe 511a. When the first component on-off valve 52a is closed, the flow of sulfuric acid through the first component supply pipe 512a is stopped, and the supply of sulfuric acid to the first liquid supply pipe 511a is stopped. Similarly, when the second component on-off valve 53a is closed, the flow of hydrogen peroxide through the second component supply pipe 513a is stopped, and the supply of hydrogen peroxide to the first liquid supply pipe 511a is stopped.

[0066] The opening and closing operations of the first component on-off valve 52a and the second component on-off valve 53a are controlled by the control device 10 (control unit 11). The actuators of the first component on-off valve 52a and the second component on-off valve 53a are, for example, pneumatic actuators or electric actuators.

[0067] When discharging SPM from the first discharge nozzle 5a, the control device 10 (control unit 11) opens the first component on-off valve 52a and the second component on-off valve 53a. When discharging hydrogen peroxide from the first discharge nozzle 5a following the SPM, the control device 10 (control unit 11) closes the first component on-off valve 52a, stopping the supply of sulfuric acid to the first liquid supply pipe 511a. As a result, the supply of sulfuric acid to the first liquid supply pipe 511a is stopped, and only hydrogen peroxide is supplied to the first liquid supply pipe 511a, discharging hydrogen peroxide from the first discharge nozzle 5a. When stopping the discharge of hydrogen peroxide from the first discharge nozzle 5a, the control device 10 (control unit 11) closes the second component on-off valve 53a. As a result, the discharge of the treatment liquid (SPM and hydrogen peroxide) from the first discharge nozzle 5a is stopped.

[0068] The second discharge nozzle 5b discharges an alkaline chemical solution (second chemical solution). Specifically, the second discharge nozzle 5b discharges SC1 toward the rotating substrate W. SC1 is an example of a "second chemical solution." By discharging SC1 onto the upper surface of the rotating substrate W, a liquid film of SC1 is formed on the upper surface of the substrate W.

[0069] The discharge of SC1 by the second discharge nozzle 5b is controlled by the control device 10 (control unit 11). Specifically, the control device 10 (control unit 11) controls the discharge of SC1 by controlling the second liquid supply unit 51b.

[0070] The second liquid supply unit 51b supplies the second chemical solution (alkaline chemical solution) to the second discharge nozzle 5b. As a result, the second chemical solution is discharged from the second discharge nozzle 5b. In this embodiment, the second liquid supply unit 51b supplies SC1 to the second discharge nozzle 5b. As a result, SC1 is discharged from the second discharge nozzle 5b.

[0071] like Figure 2 As shown, the second liquid supply unit 51b may include a second liquid supply pipe 511b and a liquid on-off valve 52b. A portion of the second liquid supply pipe 511b is housed in the processing chamber 201. The remaining portion of the second liquid supply pipe 511b and the liquid on-off valve 52b are housed in the reference chamber 201. Figure 1 The structure of the chemical liquid on-off valve 52b is substantially the same as that of the first component on-off valve 52a and the second component on-off valve 53a, so detailed description thereof will be omitted.

[0072] The second liquid supply pipe 511b is a tubular member that circulates the processing liquid. Specifically, the second liquid supply pipe 511b circulates SC1 to the second discharge nozzle 5b. As a result, SC1 is supplied to the second discharge nozzle 5b and discharged from the second discharge nozzle 5b.

[0073] The chemical liquid on-off valve 52b is provided on the second liquid supply piping 511b. The chemical liquid on-off valve 52b controls the start and stop of the flow of SC1 (treatment liquid) through the second liquid supply piping 511b. The opening and closing operation of the chemical liquid on-off valve 52b is controlled by the control device 10 (control unit 11). When the control device 10 (control unit 11) causes SC1 to be ejected from the second ejection nozzle 5b, the chemical liquid on-off valve 52b is opened. When the control device 10 (control unit 11) stops the ejection of SC1 from the second ejection nozzle 5b, the chemical liquid on-off valve 52b is closed.

[0074] The third discharge nozzle 5c discharges the rinsing liquid. Specifically, the third discharge nozzle 5c discharges the rinsing liquid toward the rotating substrate W. By discharging the rinsing liquid toward the upper surface of the rotating substrate W, a liquid film of the rinsing liquid is formed on the upper surface of the substrate W.

[0075] The discharge of the rinse liquid by the third discharge nozzle 5c is controlled by the control device 10 (control unit 11). Specifically, the control device 10 (control unit 11) controls the discharge of the rinse liquid by controlling the third liquid supply unit 51c.

[0076] The third liquid supply unit 51c supplies the rinse liquid to the third ejection nozzle 5c. As a result, the rinse liquid is ejected from the third ejection nozzle 5c. Figure 2 As shown, the third liquid supply unit 51c may include a third liquid supply pipe 511c and a rinse liquid on-off valve 52c. A portion of the third liquid supply pipe 511c is housed in the processing chamber 201. The remaining portion of the third liquid supply pipe 511c and the rinse liquid on-off valve 52c are housed in the reference chamber 201. Figure 1 The rinsing liquid on-off valve 52c is capable of opening and closing. The opening and closing of the rinsing liquid on-off valve 52c is controlled by the control device 10 (control unit 11). The structure of the third liquid supply unit 51c is substantially the same as that of the second liquid supply unit 51b, so a detailed description thereof will be omitted.

[0077] like Figure 3 As shown, the first nozzle moving unit 61 moves the first discharge nozzle 5a between the processing position TP and the first standby position WP1. The first nozzle moving unit 61 is controlled by the control unit 11. The processing position TP is a position relative to the substrate W held by the substrate holding unit 3. In this embodiment, the processing position TP is a position relative to the center of the substrate W. In other words, the processing position TP is a position on the first rotation axis AX1. The first standby position WP1 is located outside the liquid receiving unit 7 when viewed from above.

[0078] Specifically, the first nozzle moving unit 61 moves the first ejection nozzle 5a in the vertical direction and the horizontal direction. Specifically, the first nozzle moving unit 61 includes a first arm 611, a first nozzle base 612, and a first nozzle moving mechanism 613 ( Figure 2 ).

[0079] like Figure 2 As shown, the first nozzle base 612 extends vertically. The first arm 611 is coupled to the first nozzle base 612. The first arm 611 extends horizontally from the first nozzle base 612. The first arm 611 supports the first ejection nozzle 5a. For example, the first ejection nozzle 5a is fixed to the front end of the first arm 611.

[0080] The first nozzle moving mechanism 613 moves the first arm 611 in the vertical and horizontal directions. As a result, the first ejection nozzle 5a moves in the vertical and horizontal directions. The first nozzle moving mechanism 613 is controlled by the control device 10 (control unit 11).

[0081] Specifically, the first nozzle moving mechanism 613 includes a rotating mechanism and a lifting mechanism. The rotating mechanism rotates the first nozzle base 612 in both forward and reverse directions around the second rotation axis AX2 extending in the vertical direction. As a result, the first ejection nozzle 5a moves along the horizontal plane. The lifting mechanism lifts and lowers the first nozzle base 612 in the vertical direction. As a result, the first ejection nozzle 5a moves in the vertical direction. The actuator of the rotating mechanism may include, for example, a servo motor such as a stepping motor and a reducer. The actuator of the lifting mechanism may include, for example, a ball screw or an electric motor capable of forward and reverse rotation.

[0082] like Figure 3 As shown, the second nozzle moving unit 62 moves the second discharge nozzle 5b between the processing position TP and the second standby position WP2. The second nozzle moving unit 62 is controlled by the control unit 11. The second standby position WP2 is different from the first standby position WP1. Like the first standby position WP1, the second standby position WP2 is located outside the liquid receiving unit 7 in a plan view.

[0083] Specifically, the second nozzle moving unit 62 moves the second ejection nozzle 5b in the vertical direction and the horizontal direction. Figure 2 and Figure 3 As shown, the second nozzle moving unit 62 has a second arm 621, a second nozzle base 622 and a second nozzle moving mechanism 623 ( Figure 2). The second nozzle moving mechanism 623 has a rotation mechanism and a lifting mechanism similar to the first nozzle moving mechanism 613. The rotation mechanism of the second nozzle moving mechanism 623 rotates the second nozzle base 622 in both forward and reverse directions around the third rotation axis AX3 extending in the vertical direction. The second nozzle moving mechanism 623 is controlled by the control device 10 (control unit 11). Since the structure of the second nozzle moving unit 62 is substantially the same as that of the first nozzle moving unit 61, its detailed description is omitted.

[0084] Next, refer to Figure 2 , explaining the liquid receiving part 7, the first lifting part 75a, the second lifting part 75b, the recovery pipe 8a, and the first liquid discharge pipe 8b. The liquid receiving part 7 surrounds the substrate W held by the substrate holding part 3 and receives the processing liquid discharged from the substrate W. In this embodiment, the liquid receiving part 7 receives the SPM, hydrogen peroxide, SC1 and rinse liquid discharged from the substrate W. Figure 2 As shown, the liquid receiving portion 7 may include a first protection member 7a, a second protection member 7b, and a first cup portion 7c.

[0085] The first lifting portion 75a lifts the first guard 7a between a first upper position and a first lower position. When the first guard 7a is in the first upper position, the upper end of the first guard 7a is located above the substrate W held on the substrate holder 3. When the first guard 7a is in the first lower position, the upper end of the first guard 7a is located below the substrate W held on the substrate holder 3.

[0086] Similarly, the second lifting unit 75b lifts the second guard 7b between a second upper position and a second lower position. When the second guard 7b is in the second upper position, the upper end of the second guard 7b is located above the substrate W held on the substrate holder 3. When the second guard 7b is in the second lower position, the upper end of the second guard 7b is located below the substrate W held on the substrate holder 3.

[0087] The first lifting unit 75a and the second lifting unit 75b are controlled by the control device 10 (control unit 11). The first lifting unit 75a and the second lifting unit 75b may include, for example, a ball screw and an electric motor capable of forward and reverse rotation.

[0088] When located at the first upper position, the first guard 7a surrounds the substrate W held by the substrate holding portion 3 and receives the processing liquid discharged from the substrate W. Specifically, the first guard 7a includes a guard portion 71a and a second cup portion 72a.

[0089] The guard portion 71a is substantially cylindrical. When located in the first upper position, the guard portion 71a surrounds the substrate W held by the substrate holder 3 and receives processing liquid discharged from the substrate W. In this embodiment, the guard portion 71a receives SPM, hydrogen peroxide, SC1, and rinse liquid discharged from the substrate W.

[0090] The first cup portion 7c is an annular component positioned around the cover portion 43 of the substrate rotating unit 4. The first cup portion 7c has an annular groove with an open top surface. The annular lower end of the guard portion 71a is positioned inside the annular groove of the first cup portion 7c. As a result, the processing liquid received by the guard portion 71a is collected in the groove of the first cup portion 7c.

[0091] The second guard 7b is a substantially cylindrical member disposed around (outside) the guard portion 71a. When the second guard 7b is in the second upper position and the first guard 7a is in the first lower position, the second guard 7b surrounds the substrate W held on the substrate holder 3 and receives processing liquid discharged from the substrate W. In this embodiment, the second guard 7b receives SPM discharged from the substrate W.

[0092] The second cup portion 72a is annular and positioned around (outside) the guard portion 71a. The second cup portion 72a has an open annular groove on its upper surface. The annular lower end of the second guard 7b is positioned inside the annular groove of the second cup portion 72a. As a result, the treatment liquid received by the second guard 7b is collected in the second cup portion 72a.

[0093] The recovery pipe 8a is a tubular component for the circulation of the treatment liquid. The recovery pipe 8a is connected to the bottom of the second cup portion 72a and extends from the inside of the treatment chamber 201 to the outside. The first liquid (acidic liquid) collected in the second cup portion 72a flows into the recovery pipe 8a. The recovery pipe 8a guides the first liquid collected in the second cup portion 72a to the outside of the treatment chamber 201. In addition, the first liquid flowing into the recovery pipe 8a is directed to the reference Figure 1 As a result, the first chemical solution collected in the second cup portion 72a is recovered in the fluid cabinet 100A. In this embodiment, the recovery pipe 8a guides the SPM collected in the second cup portion 72a to the fluid cabinet 100A.

[0094] The first drain pipe 8b discharges the treatment liquid from the inside of the treatment chamber 201 to the outside. Specifically, the first drain pipe 8b is a tubular component for the circulation of the treatment liquid. The first drain pipe 8b is connected to the bottom of the first cup portion 7c and extends from the inside of the treatment chamber 201 to the outside. The treatment liquid collected in the first cup portion 7c flows into the first drain pipe 8b. The first drain pipe 8b guides the treatment liquid collected in the first cup portion 7c to the outside of the treatment chamber 201. Specifically, the second liquid (alkaline liquid) and the rinse liquid flow from the first cup portion 7c into the first drain pipe 8b. In this embodiment, SPM, hydrogen peroxide, SC1 and the rinse liquid flow from the first cup portion 7c into the first drain pipe 8b. In addition, regarding the discharge destination of the treatment liquid flowing into the first drain pipe 8b, refer to Figure 7 Described later.

[0095] Next, refer to Figure 2 , the first exhaust duct 9, the second exhaust duct 101 and the exhaust damper 91 are described. The first exhaust duct 9 exhausts the first gas, which is the gas in the processing chamber 201, to the outside of the processing chamber 201. The second exhaust duct 101 is arranged outside the processing chamber 201. In detail, the second exhaust duct 101 is housed in the reference Figure 1 The second exhaust duct 101 is connected to the first exhaust duct 9 . The first gas exhausted from the first exhaust duct 9 flows into the second exhaust duct 101 .

[0096] Specifically, the gas within the second exhaust duct 101 is constantly drawn in by exhaust equipment (not shown) installed in the factory where the substrate processing apparatus 100 is installed. Therefore, the first gas within the first exhaust duct 9 is drawn into the second exhaust duct 101 by the suction force of the exhaust equipment transmitted through the second exhaust duct 101. As a result, the first gas within the processing chamber 201 is exhausted into the second exhaust duct 101 via the first exhaust duct 9.

[0097] The exhaust damper 91 adjusts the flow rate of the first gas flowing from the first exhaust duct 9 to the second exhaust duct 101. Specifically, the exhaust damper 91 is arranged to span from the first exhaust duct 9 to the second exhaust duct 101. The exhaust damper 91 is a plate-shaped component, and its axis is supported on a rotating shaft. The substrate processing unit 2 also includes a driving unit (not shown) that rotates the rotating axis of the exhaust damper 91 in both forward and reverse directions. The control device 10 (control unit 11) controls the driving unit of the exhaust damper 91 to adjust the inclination angle of the exhaust damper 91. As a result, the flow rate of the first gas flowing from the first exhaust duct 9 to the second exhaust duct 101 is adjusted. In addition, the driving unit of the exhaust damper 91 may include a stepping motor, for example.

[0098] Next, refer to Figure 3 , the substrate processing apparatus 100 of this embodiment is described. Figure 3 As shown, the substrate processing unit 2 further includes a gate 205. In addition, the processing chamber 201 further includes a loading and unloading port 201b. The loading and unloading port 201b is an opening that connects the interior of the processing chamber 201 with the outside. The loading and unloading port 201b is formed on the side wall 203 of the processing chamber 201. The gate 205 opens and closes the loading and unloading port 201b. Specifically, the gate 205 can move between a position where the loading and unloading port 201b is opened and a position where the loading and unloading port 201b is closed. The substrate processing unit 2 further includes a cylinder (not shown) for moving the gate 205. The control device 10 (control unit 11) controls the cylinder to move the gate 205.

[0099] The substrate W is loaded into the processing chamber 201 through the loading / unloading port 201b. In addition, the substrate W is unloaded from the processing chamber 201 through the loading / unloading port 201b. Specifically, when the gate 205 opens the loading / unloading port 201b, the substrate W is loaded into the lower space SP2 of the processing chamber 201 through the loading / unloading port 201b. In addition, when the gate 205 opens the loading / unloading port 201b, the central robot CR (refer to FIG. Figure 1 ) The substrate W is carried out from the interior of the processing chamber 201 to the outside through the loading / unloading port 201b. For example, the control unit 11 transfers the substrate W from the central robot CR to the substrate holding unit 3, and closes the gate 205 after the hand of the central robot CR retreats to the outside of the processing chamber 201.

[0100] Next, refer to Figures 1 to 4 , a substrate processing apparatus 100 according to this embodiment will be described. Figure 4 1 is a flowchart showing the operation of the substrate processing apparatus 100 according to this embodiment. Figure 4 The flow of processing executed by the control unit 11 is shown. Figure 4 The start time of the shown processing is pre-scheduled.

[0101] If you start Figure 4 In the process shown, the control unit 11 first controls the central robot CR to carry the substrate W into the lower space SP2 of the processing chamber 201 (step S1). Then, the control unit 11 controls the substrate holder 3 to hold the substrate W carried by the central robot CR on the substrate holder 3 (step S2).

[0102] Once the substrate W is held on the substrate holder 3, the control unit 11 controls the substrate rotating unit 4 to rotate the substrate W integrally with the substrate holder 3 (step S3). When the rotation speed of the substrate W reaches a predetermined first rotation speed, the control unit 11 controls the substrate processing unit 2 to perform substrate processing (step S4). Specifically, the control unit 11 controls the substrate processing unit 2 to supply SPM, hydrogen peroxide solution, rinse solution, and SC1 to the substrate W in the order of SPM, hydrogen peroxide solution, rinse solution, SC1, and rinse solution.

[0103] After the substrate processing is completed, the control unit 11 performs a drying process to dry the substrate W (step S5). Specifically, the control unit 11 controls the substrate rotating unit 4 to increase the rotation speed of the substrate W to a predetermined second rotation speed. As a result, the processing liquid is removed from the substrate W, and the substrate W is dried.

[0104] If a predetermined time has passed since the rotation speed of the substrate W was increased to the second rotation speed, the control unit 11 stops the rotation of the substrate W. If the rotation of the substrate W is stopped, the control unit 11 controls the substrate holding unit 3 to release the holding of the substrate W. If the holding of the substrate W by the substrate holding unit 3 is released, the control unit 11 controls the central robot CR to move the substrate W out of the processing chamber 201 (step S6). As a result, Figure 4 The indicated processing ends.

[0105] Next, refer to Figures 1 to 5 , a substrate processing apparatus 100 according to this embodiment will be described. Figure 5 It indicates substrate processing ( Figure 4 Flowchart of the process of step S4). In detail, Figure 5 The flow of processing executed by the control unit 11 is shown.

[0106] If substrate processing is started, the control unit 11 controls the second lifting unit 75b to move the second guard 7b from the second lower position to the second upper position. In addition, the control unit 11 controls the first nozzle moving unit 61 to move the first ejection nozzle 5a from the first standby position WP1 to the processing position TP. Then, the control unit 11 controls the first liquid supply unit 51a to eject SPM (first liquid chemical) from the first ejection nozzle 5a toward the rotating substrate W (step S41). As a result, a liquid film of SPM is formed on the upper surface of the substrate W. In addition, the SPM discharged from the rotating substrate W is collected in the second cup portion 72a. The SPM collected in the second cup portion 72a flows into the recovery pipe 8a.

[0107] After a predetermined time has passed since the start of SPM discharge, the control unit 11 performs a puddle process to maintain the SPM liquid film on the substrate W (step S42). Specifically, the control unit 11 controls the substrate rotating unit 4 to reduce the rotation speed of the substrate W to a predetermined third rotation speed that maintains the liquid film on the substrate W. Alternatively, the control unit 11 controls the substrate rotating unit 4 to stop the rotation of the substrate W.

[0108] The control unit 11 executes the guard switching process during the immersion process (step S43 ) Specifically, the control unit 11 controls the first lifting unit 75 a to move the first guard 7 a from the first lower position to the first upper position.

[0109] When a predetermined time has passed since the start of the immersion process, the control unit 11 controls the substrate rotating unit 4 to return the rotation speed of the substrate W from the third rotation speed to the first rotation speed. Alternatively, the control unit 11 controls the substrate rotating unit 4 to start rotating the substrate W.

[0110] When the rotation speed of the substrate W reaches the first rotation speed, the control unit 11 controls the first liquid supply unit 51a to spray hydrogen peroxide from the first discharge nozzle 5a toward the rotating substrate W (step S44). As a result, SPM is discharged from the substrate W, forming a liquid film of hydrogen peroxide on the upper surface of the substrate W. The SPM discharged from the substrate W is collected in the first cup portion 7c. The SPM collected in the first cup portion 7c flows into the first liquid drainage pipe 8b. In addition, the hydrogen peroxide discharged from the rotating substrate W is collected in the first cup portion 7c. The hydrogen peroxide collected in the first cup portion 7c flows into the first liquid drainage pipe 8b.

[0111] After a predetermined time has passed since the start of the hydrogen peroxide discharge, the control unit 11 executes the first rinse process (step S45). Specifically, the control unit 11 controls the first liquid supply unit 51a to stop the discharge of hydrogen peroxide and controls the third liquid supply unit 51c to discharge the rinse liquid from the third discharge nozzle 5c toward the rotating substrate W. As a result, the hydrogen peroxide is discharged from the upper surface of the substrate W, forming a rinse liquid film on the upper surface of the substrate W. In other words, the liquid film on the substrate W is replaced by the rinse liquid film instead of the hydrogen peroxide film.

[0112] The hydrogen peroxide discharged from the substrate W is collected in the first cup portion 7c. The hydrogen peroxide collected in the first cup portion 7c flows into the first drainage pipe 8b. Furthermore, the rinse liquid discharged from the rotating substrate W is collected in the first cup portion 7c. The rinse liquid collected in the first cup portion 7c flows into the first drainage pipe 8b. After stopping the discharge of the hydrogen peroxide, the control unit 11 controls the first nozzle moving unit 61 to move the first discharge nozzle 5a from the processing position TP to the first standby position WP1.

[0113] After a predetermined time has elapsed since the start of the first rinse process, the control unit 11 controls the second nozzle moving unit 62 to move the second discharge nozzle 5b from the second standby position WP2 to the processing position TP. Furthermore, the control unit 11 controls the third liquid supply unit 51c to stop the discharge of the rinse liquid from the third discharge nozzle 5c and controls the second liquid supply unit 51b to discharge SC1 (the second chemical liquid) from the second discharge nozzle 5b (step S46). As a result, the rinse liquid is discharged from the upper surface of the substrate W, forming a liquid film of SC1 on the upper surface of the substrate W. In other words, the liquid film on the substrate W is replaced by the liquid film of SC1.

[0114] The rinse liquid discharged from the substrate W is collected in the first cup portion 7c. The rinse liquid collected in the first cup portion 7c flows into the first drain pipe 8b. Furthermore, the SC1 discharged from the rotating substrate W is collected in the first cup portion 7c. The SC1 collected in the first cup portion 7c flows into the first drain pipe 8b.

[0115] After a predetermined time has passed since the start of SC1 discharge, the control unit 11 executes the second rinse process (step S47). Specifically, the control unit 11 controls the second liquid supply unit 51b to stop the discharge of SC1 and controls the third liquid supply unit 51c to discharge the rinse liquid from the third discharge nozzle 5c toward the rotating substrate W. As a result, SC1 is discharged from the upper surface of the substrate W, forming a rinse liquid film on the upper surface of the substrate W. In other words, the liquid film on the substrate W is replaced by the rinse liquid film instead of the SC1 film.

[0116] SC1 discharged from the substrate W is collected in the first cup portion 7c. The SC1 collected in the first cup portion 7c flows into the first drainage pipe 8b. Furthermore, the rinse liquid discharged from the rotating substrate W is collected in the first cup portion 7c. The rinse liquid collected in the first cup portion 7c flows into the first drainage pipe 8b. After stopping the discharge of SC1, the control unit 11 controls the second nozzle moving unit 62 to move the second discharge nozzle 5b from the processing position TP to the second standby position WP2.

[0117] When a predetermined time has passed since the start of the second rinse process, the control unit 11 controls the third liquid supply unit 51c to stop the discharge of the rinse liquid. Figure 4 The drying process (step S5) is shown. As a result, the rinsing liquid is drained from the substrate W, and the substrate W is dried. The rinsing liquid drained from the substrate W is collected in the first cup portion 7c. The rinsing liquid collected in the first cup portion 7c flows into the first drain pipe 8b.

[0118] Next, refer to Figures 1 to 6, further describing the substrate processing apparatus 100 of this embodiment. As already described, the substrate processing unit 2 supplies a chemical solution to the substrate W to process the substrate W. As a result, sometimes a mist originating from the chemical solution is generated from the chemical solution in the processing chamber 201, and the mist originating from the chemical solution adheres to various components in the processing chamber 201. In addition, sometimes the mist originating from the chemical solution is discharged into the second exhaust duct 101 together with the first gas exhausted from the processing chamber 201, and adheres to the inner surface 101a ( Figure 7 The mist originating from the drug solution is an example of the "first mist".

[0119] In this embodiment, mist (acidic mist) originating from an acidic chemical solution (first chemical solution) and mist (alkaline mist) originating from an alkaline chemical solution (second chemical solution) are generated in the processing chamber 201. Specifically, mist (acidic mist) originating from SPM, mist (acidic mist) originating from hydrogen peroxide, and mist (alkaline mist) originating from SC1 are generated.

[0120] In addition, mist (fume) derived from the chemical solution may be generated in the processing chamber 201, and the mist derived from the chemical solution may adhere to various components in the processing chamber 201. In addition, the mist derived from the chemical solution may be discharged into the second exhaust duct 101 together with the first gas exhausted from the processing chamber 201, and may adhere to the inner surface 101a ( Figure 7 For example, mist is generated from the SPM when the SPM is used to process the substrate W. In particular, mist is more likely to be generated when the substrate W is processed using the SPM at a high temperature (e.g., 150°C or higher). Furthermore, mist is more likely to be generated when the liquid film on the substrate W is replaced by a hydrogen peroxide film from the SPM liquid film.

[0121] If the mist from the chemical liquid dries on the surface to which the mist from the chemical liquid adheres, crystals will precipitate. Similarly, if the mist from the chemical liquid dries on the surface to which the mist from the chemical liquid adheres, crystals will precipitate. As a result, for example, there is a possibility that the substrate W will be contaminated by the precipitated crystals. Specifically, there is a possibility that the number of particles on the substrate W will increase. For example, when the material of the component to which the mist from the chemical liquid or the mist adheres is polyvinyl chloride (PVC), crystals may precipitate. In addition, crystals may precipitate on the surface to which acidic mist or acidic mist and alkaline mist adhere.

[0122] The substrate processing apparatus 100 of this embodiment includes a target component having a hydrophobized surface TS as a surface to be hydrophobized. Here, the hydrophobized surface TS is a surface exposed to chemical mist or mist generated from the chemical. On the other hand, the hydrophobized surface TS is a surface with which the chemical or chemical droplets are not expected to come into contact. Hereinafter, the surface to be hydrophobized may be referred to as the "target surface."

[0123] According to this embodiment, by making the surface exposed to the chemical mist or mist vapor hydrophobic, the chemical mist or mist vapor is less likely to adhere to the surface. This reduces the chances of crystallization on the surface exposed to the chemical mist or mist vapor. Consequently, the accumulation of particles is minimized. Furthermore, the reduced accumulation of particles reduces the likelihood of defects in devices manufactured using the substrate W, improving the yield rate.

[0124] Furthermore, the rinsing liquid or its droplets will also come into contact with the surfaces contacted by the medical liquid or its droplets. Therefore, even if droplets or mist from the medical liquid adhere, the rinsing liquid or its droplets will flush the attached droplets or mist away. Therefore, in this embodiment, the surfaces exposed to the droplets or mist from the medical liquid, but not expected to come into contact with the medical liquid or its droplets, are rendered hydrophobic.

[0125] The means for making the target surface hydrophobic is not particularly limited. Here, the means for making the target surface hydrophobic is described. In addition, in the following description, there are cases where the fine particles LD of the medicinal liquid that constitute the mist or mist derived from the medicinal liquid are referred to as "fine particles LD of the medicinal liquid".

[0126] For example, the target surface can be made hydrophobic by selecting a material that creates a larger contact angle θ for the drug liquid particles (droplets) compared to the surface that is not to be hydrophobized. Alternatively, the target surface can be made hydrophobic by selecting a material that creates a larger contact angle θ for the drug liquid particles (droplets) compared to the surface that is not to be hydrophobized. Furthermore, the contact angle θ is the angle formed within the drug liquid particles LD (droplet), within the angles between the interface between the drug liquid particles LD (droplet) and the hydrophobized surface TS and the air-liquid interface of the drug liquid particles LD (droplet).

[0127] Materials that increase the contact angle θ include, for example, materials that increase the contact angle θ compared to PVC. Materials that increase the contact angle θ compared to PVC include, for example, fluororesins. Fluororesins may include, for example, perfluoroalkoxy resin (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), and ethylene-chlorotrifluoroethylene copolymer (ECTFE), or may include a mixture of two or more thereof.

[0128] Alternatively, in order to make the target surface hydrophobic, the target surface may be coated or modified with a water repellent agent to make the target surface hydrophobic, or the target surface may be finely processed (processed into fine concave and convex shapes, see Figure 6 Alternatively, the target surface may be made hydrophobic by combining two or more of the selection of materials, water repellent agents, and microfabrication.

[0129] The water repellent is not particularly limited. For example, the water repellent may be a silicone-based water repellent. More specifically, the water repellent may be a silane coupling agent. For example, the water repellent may include one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chlorine-based water repellents, or a mixture of two or more thereof.

[0130] When the target surface is finely processed, the target surface can be processed into a fine concavoconvex shape. Specifically, the target surface can be processed into a fine concavoconvex shape that increases the contact angle θ of the fine particles LD (droplets) of the drug solution.

[0131] Figure 6 It is a cross-sectional view showing an example of the hydrophobized surface TS. Figure 6 The hydrophobized surface TS shown is processed into a fine concavo-convex shape. That is, the hydrophobized surface TS has a fine concavo-convex shape. Specifically, Figure 6 The hydrophobized surface TS shown has a concavo-convex portion 120. The concavo-convex portion 120 includes a plurality of concave portions 121 and a plurality of convex portions 122. In other words, the concavo-convex portion 120 is formed by the plurality of concave portions 121 and the plurality of convex portions 122.

[0132] like Figure 6As shown, the concave portion 121 has a width W1 that is smaller than the diameter Dm of the liquid medicine particles LD (droplets). In addition, the concave portion 121 has a depth De such that the liquid medicine particles LD (droplets) do not contact the bottom 121a of the concave portion 121 when the liquid medicine particles LD (droplets) are in contact with the plurality of protrusions 122. The protrusions 122 have a width W2 that is smaller than the diameter Dm of the liquid medicine particles LD (droplets) and smaller than the width W1 of the concave portion 121. As a result, the liquid medicine particles LD (droplets) do not completely enter the concave portion 121 and are in contact with the plurality of protrusions 122, and the area in which the liquid medicine particles LD (droplets) contact the hydrophobized surface TS is reduced. As a result, the contact angle θ of the liquid medicine particles LD (droplets) with respect to the hydrophobized surface TS becomes larger than the contact angle θ of the liquid medicine particles LD (droplets) with respect to the surface on which the concave-convex portion 120 is not formed. Therefore, the hydrophobicity of the hydrophobized surface TS is improved compared to a surface without the concavo-convex portion 120. Furthermore, the contact angle θ is the angle formed inside the drug liquid particle LD (droplet) among the angles between the interface between the concavo-convex portion 120 and the drug liquid particle LD (droplet) and the air-liquid interface of the drug liquid particle LD (droplet).

[0133] like Figure 2 As shown, in this embodiment, the target components having the hydrophobic surface TS include the side wall 203 of the processing chamber 201, the rectifying plate 23, the exhaust damper 91, and the cover portion 43 of the substrate rotating unit 4. Furthermore, the hydrophobic surface TS includes the inner wall surface 203a of the processing chamber 201 (side wall 203), the lower surface 231 of the rectifying plate 23, the surface 91a of the exhaust damper 91, and the outer surface 431 of the lower portion 43a of the cover portion 43. The lower portion 43a of the cover portion 43 is the portion of the cover portion 43 located below the liquid receiving portion 7.

[0134] According to this embodiment, the inner wall surface 203a of the processing chamber 201 (side wall 203), the lower surface 231 of the rectifying plate 23, the surface 91a of the exhaust damper 91, and the outer surface 431 of the lower portion 43a are hydrophobicized. As a result, particles are less likely to increase.

[0135] Furthermore, if crystals are deposited on the surface 91a of the exhaust damper 91, the exhaust damper 91 becomes difficult to rotate. Alternatively, the exhaust damper 91 may be unable to rotate. In contrast, according to this embodiment, crystals are less likely to be deposited on the surface 91a of the exhaust damper 91, so the inconvenience of the exhaust damper 91 becoming difficult to rotate or being unable to rotate is less likely to occur.

[0136] In addition, in the substrate processing device, there is a device that is provided with a cleaning nozzle for cleaning the inner wall surface 203a of the processing chamber 201 (side wall 203) and a cleaning nozzle for cleaning the surface 91a of the exhaust damper 91, and pure water is sprayed from these cleaning nozzles toward each target surface to clean each target surface. In this device, the inner wall surface 203a of the processing chamber 201 (side wall 203) and the surface 91a of the exhaust damper 91 are cleaned with pure water, and the mist and gas from the chemical liquid are removed from these surfaces. In contrast, according to this embodiment, the precipitation of crystals can be suppressed without using a cleaning nozzle. Therefore, the device structure can be suppressed from becoming complicated. Moreover, since there is no need to use pure water to clean the target surface, the use of pure water can be reduced, reducing the environmental burden.

[0137] Furthermore, when the lower surface 231 of the rectifying plate 23 is cleaned with pure water, there is a possibility that water droplets from the rectifying plate 23 may fall onto the substrate W during substrate processing, thereby contaminating the substrate W. In contrast, according to this embodiment, there is no need to clean the lower surface 231 of the rectifying plate 23 with pure water to remove crystallized matter, so the substrate W is less likely to be contaminated.

[0138] In addition, when the lower surface 231 of the rectifier plate 23 is cleaned with pure water, there is a possibility that water droplets adhere to the through-holes 23a of the rectifier plate 23 and cause blockage in the through-holes 23a. As a result, there is a possibility of generating unnecessary alarms. Specifically, the substrate processing apparatus 100 of the present embodiment also includes a pressure sensor (not shown) for detecting pressure changes in the upper space SP1. If the pressure detected by the pressure sensor exceeds a threshold value, the control device 10 (control unit 11) controls the alarm not shown to generate an alarm. Therefore, if the pressure in the upper space SP1 rises due to blockage in the through-holes 23a caused by liquid droplets, there is a possibility of generating an alarm. In contrast, according to the present embodiment, since there is no need to use pure water to clean the lower surface 231 of the rectifier plate 23 to remove crystals, the generation of unnecessary alarms can be suppressed.

[0139] Furthermore, when the outer surface 431 of the lower portion 43a is cleaned with pure water, there is a concern that the pure water may seep into the inner side of the cover portion 43 and wet the electronic components (e.g., the electric motor) disposed inside the cover portion 43. In contrast, according to this embodiment, since the outer surface 431 of the lower portion 43a does not need to be cleaned with pure water to remove crystals, there is no concern that the electronic components disposed inside the cover portion 43 may get wet.

[0140] In addition, the first spray nozzle 5a to the third spray nozzle 5c, the first arm 611, and the second arm 621 are exposed to the mist and gas from the chemical liquid. On the other hand, the first spray nozzle 5a to the third spray nozzle 5c, the first arm 611, and the second arm 621 are not included in the target component because they come into contact with the processing liquid and the droplets of the processing liquid during substrate processing. In addition, the inner wall surfaces of the first protective member 7a, the second protective member 7b, and the first cup portion 7c are also exposed to the mist and gas from the chemical liquid, and on the other hand, come into contact with the processing liquid and the droplets of the processing liquid during substrate processing. Therefore, the inner wall surfaces of the first protective member 7a, the second protective member 7b, and the first cup portion 7c are also not included in the target component.

[0141] Next, refer to Figure 3 , further illustrating the substrate processing apparatus 100 of this embodiment. Figure 3 As shown, in this embodiment, the target component having the hydrophobized surface TS includes the gate 205. Furthermore, the hydrophobized surface TS includes the inner surface 205a of the gate 205. Furthermore, the inner surface 205a of the gate 205 is the surface of the gate 205 that faces the inside of the processing chamber 201. According to this embodiment, the inner surface 205a of the gate 205 is hydrophobized. Therefore, particles are less likely to accumulate.

[0142] Furthermore, the gate 205 vibrates when opening and closing the load / unload port 201b, so crystals precipitated on the inner surface 205a of the gate 205 are easily detached. Consequently, when substrates W pass through the load / unload port 201b, there is a possibility that crystals detached from the inner surface 205a of the gate 205 may contaminate the substrates W. In other words, there is a possibility that the number of particles on the substrates W may increase. In contrast, according to this embodiment, crystals are less likely to precipitate on the inner surface 205a of the gate 205, thus minimizing the increase in particles.

[0143] In addition, the substrate processing apparatus is equipped with a cleaning nozzle for cleaning the inner surface 205a of the gate 205. This cleaning nozzle sprays pure water toward the inner surface 205a of the gate 205 to clean the inner surface 205a of the gate 205. In contrast, according to this embodiment, the precipitation of crystals can be suppressed without using a cleaning nozzle. This reduces the complexity of the apparatus structure. Furthermore, since pure water is not required to clean the inner surface 205a of the gate 205, pure water usage can be reduced, thereby reducing the environmental impact.

[0144] Next, refer to Figure 7 A substrate processing apparatus 100 according to this embodiment will be described. Figure 7 1 is a diagram showing a portion of a substrate processing apparatus 100 according to this embodiment. Figure 7The figures show a tower TW and a second exhaust duct 101. In the present embodiment, the tower TW is formed by three stacked substrate processing units 2.

[0145] like Figure 7 As shown, the first exhaust duct 9 of each of the plurality of substrate processing units 2 forming one tower TW is connected to one second exhaust duct 101. Therefore, the processing chamber 201 of each of the plurality of substrate processing units 2 (see Figure 2 ) flows into a second exhaust duct 101.

[0146] like Figure 7 As shown, in this embodiment, the target component having the hydrophobic surface TS includes the second exhaust duct 101. Furthermore, the hydrophobic surface TS includes the inner surface 101a of the second exhaust duct 101. Therefore, according to this embodiment, crystals are less likely to precipitate on the inner surface 101a of the second exhaust duct 101.

[0147] Furthermore, users of the substrate processing apparatus 100 may periodically stop the apparatus 100 to manually clean crystals precipitated on the inner surface 101a of the second exhaust duct 101. In contrast, according to this embodiment, since crystals are less likely to precipitate on the inner surface 101a of the second exhaust duct 101, there is no need to stop the substrate processing apparatus 100 and perform manual cleaning. Alternatively, the frequency of such cleaning can be reduced.

[0148] Next, refer to Figure 8 A substrate processing apparatus 100 according to this embodiment will be described. Figure 8 1 is another diagram showing a portion of the substrate processing apparatus 100 according to this embodiment. Figure 8 As shown, the substrate processing apparatus 100 further includes a first branch pipe 8c, a second branch pipe 8d, a drain box 102, an exhaust pipe 103, a second drain pipe 104, a first opening and closing valve 81, a second opening and closing valve 82, a third opening and closing valve 83 and a fourth opening and closing valve 105.

[0149] In this embodiment, the target components having the hydrophobic surface TS include the drain box 102 and the exhaust pipe 103. Furthermore, the hydrophobic surface TS includes the inner wall surface 102a of the drain box 102 and the inner surface 103a of the exhaust pipe 103. As a result, the acidic mist and alkaline mist are less likely to flow back from the drain box 102 toward the processing chamber 201, thereby preventing the acidic mist and alkaline mist from flowing back into the processing chamber 201. The phenomenon of the acidic mist and alkaline mist flowing back will be described in detail below.

[0150] A portion of the first drain pipe 8b, the first branch pipe 8c, a portion of the second branch pipe 8d, a drain tank 102, a portion of the exhaust pipe 103, a portion of the second drain pipe 104, the first on-off valve 81, the second on-off valve 82, the third on-off valve 83 and the fourth on-off valve 105 are housed in the reference Figure 1 The fluid box 100B is described.

[0151] One end of the first branch pipe 8c is connected to the first drain pipe 8b, and the other end of the first branch pipe 8c is connected to the drain tank 102. The first branch pipe 8c is a tubular member through which the treated liquid flows, connecting the first drain pipe 8b and the drain tank 102. One end of the second branch pipe 8d is connected to the first branch pipe 8c. The second branch pipe 8d is a tubular member through which the treated liquid flows, and is connected to the first branch pipe 8c.

[0152] In addition, a plurality of first branch pipes 8c are connected to the drain box 102. Each of the plurality of first branch pipes 8c forms a tower TW (see Figure 1 ) are connected to the processing chambers 201 of the plurality of substrate processing units 2. In this embodiment, three substrate processing units 2 form one tower TW, so three first branch pipes 8c are connected to one drain box 102.

[0153] One end of the exhaust pipe 103 is connected to the upper wall of the drain box 102. The exhaust pipe 103 is a tubular member for gas circulation and communicates with the drain box 102. The second gas, which is the gas within the drain box 102, is exhausted to the outside of the drain box 102 via the exhaust pipe 103. Furthermore, the second gas includes a chemical liquid atmosphere. Specifically, the chemical liquid exhausted from the substrate processing unit 2 (processing chamber 201) is retained within the drain box 102. As a result, the atmosphere within the drain box 102 becomes a chemical liquid atmosphere.

[0154] The first on-off valve 81 is installed in the first drain pipe 8b. Specifically, the first on-off valve 81 is located downstream of the connection between the first drain pipe 8b and the first branch pipe 8c. The first on-off valve 81 controls the start and stop of the flow of the treatment liquid through the first drain pipe 8b.

[0155] The second on-off valve 82 is provided in the second branch pipe 8d. The second on-off valve 82 controls the start and stop of the flow of the processing liquid through the second branch pipe 8d.

[0156] The third on-off valve 83 is provided in the first branch pipe 8c. Specifically, the third on-off valve 83 is located downstream of the connection between the first branch pipe 8c and the second branch pipe 8d. The third on-off valve 83 controls the start and stop of the flow of the treatment liquid through the first branch pipe 8c.

[0157] The opening and closing operations of the first opening and closing valve 81 to the third opening and closing valve 83 are controlled by the control unit 11. Figure 2 The first component on-off valve 52 a and the second component on-off valve 53 a described above are substantially the same, and therefore detailed description thereof will be omitted.

[0158] When the liquid film on the substrate W is replaced by the liquid film of hydrogen peroxide from the liquid film of SPM and the liquid film of hydrogen peroxide is formed on the upper surface of the substrate W ( Figure 5 In step S44), the control unit 11 sets the first on-off valve 81 to an open state and sets the second on-off valve 82 and the third on-off valve 83 to a closed state. As a result, the SPM and hydrogen peroxide collected in the first cup portion 7c flow through the first drain pipe 8b. The SPM and hydrogen peroxide flowing in the first drain pipe 8b are discharged from the substrate processing apparatus 100. For example, the other end of the first drain pipe 8b can be connected to a pipe connected to a waste liquid facility of a factory where the substrate processing apparatus 100 is installed. However, since sulfuric acid, a component of SPM, is a high-viscosity liquid, a portion of the sulfuric acid may sometimes remain in the first cup portion 7c or the first drain pipe 8b.

[0159] The control unit 11 starts the first flushing process ( Figure 5 During step S45, the first on-off valve 81 is closed, and the third on-off valve 83 is opened. As a result, the first on-off valve 81 and the second on-off valve 82 are closed, and the third on-off valve 83 is opened. The hydrogen peroxide solution and the rinse liquid collected in the first cup portion 7c flow from the first drain pipe 8b into the first branch pipe 8c, and then through the first branch pipe 8c into the drain tank 102. Therefore, the hydrogen peroxide solution and the rinse liquid collected in the first cup portion 7c during the first rinse process are stored in the drain tank 102.

[0160] Furthermore, during the first rinse process, sulfuric acid remaining in the first cup portion 7c or the first drain pipe 8b flows into the drain tank 102 along with the hydrogen peroxide solution or the rinse liquid. Consequently, sulfuric acid (the first chemical solution) accumulates in the drain tank 102. As a result, acidic mist may be generated in the drain tank 102.

[0161] When the liquid film on the substrate W is replaced by the liquid film of the SC1 from the liquid film of the rinse liquid and the liquid film of the SC1 is formed on the upper surface of the substrate W ( Figure 5In step S46), the control unit 11 opens the second on-off valve 82 and closes the third on-off valve 83. As a result, the first on-off valve 81 and the third on-off valve 83 are closed, while the second on-off valve 82 is opened. The rinse liquid and SC1 collected in the first cup portion 7c flow from the first drain pipe 8b via the first branch pipe 8c into the second branch pipe 8d. The rinse liquid and SC1 flowing through the second branch pipe 8d are discharged from the substrate processing apparatus 100. For example, the other end of the second branch pipe 8d can be connected to a pipe connected to wastewater treatment equipment in a factory where the substrate processing apparatus 100 is installed.

[0162] The control unit 11 starts the second flushing process ( Figure 5 During step S47, the second on-off valve 82 is closed and the third on-off valve 83 is opened. As a result, similar to the first rinse process, the first and second on-off valves 81 and 82 are closed, and the third on-off valve 83 is opened, allowing the SC1 and rinse liquid collected in the first cup 7c to flow into the drain tank 102. Therefore, the SC1 (second chemical solution) and rinse liquid collected in the first cup 7c during the second rinse process remain in the drain tank 102. As a result, alkaline mist may be generated within the drain tank 102.

[0163] In addition, the treatment liquid stored in the drain box 102 is discharged through the second drain pipe 104. Specifically, the second drain pipe 104 is a tubular component for the treatment liquid to flow, which is connected to the bottom wall of the drain box 102 and communicates with the drain box 102. The fourth on-off valve 105 is provided on the second drain pipe 104 to control the start and stop of the flow of the treatment liquid through the second drain pipe 104. The opening and closing action of the fourth on-off valve 105 is controlled by the control unit 11. In addition, the structure of the fourth on-off valve 105 is different from that of the reference Figure 2 The first component on-off valve 52 a and the second component on-off valve 53 a described above are substantially the same, and therefore detailed description thereof will be omitted.

[0164] The substrate processing apparatus 100 further includes a water level sensor (not shown) that detects the position (water level) of the water surface LQa within the drain tank 102. When the water level detected by the water level sensor reaches a predetermined full water level, the controller 11 switches the fourth on-off valve 105 from a closed state to an open state. As a result, the processing liquid is discharged from the drain tank 102. For example, the controller 11 switches the fourth on-off valve 105 from an open state to a closed state after a predetermined time has passed since the fourth on-off valve 105 was switched from a closed state to an open state.

[0165] As described above, sulfuric acid (the first chemical solution) and SC1 (the second chemical solution) discharged from the interior of the treatment chamber 201 to the exterior via the first drain pipe 8b accumulate in the drain tank 102. Consequently, acidic and alkaline mists may sometimes form within the drain tank 102, precipitating crystals on the inner wall surface 102a of the drain tank 102. Furthermore, the precipitated crystals may clog the opening of the drain tank 102 connecting the interior space of the drain tank 102 to the exhaust pipe 103. Alternatively, the acidic and alkaline mists may flow into the exhaust pipe 103 and precipitate crystals on the inner surface 103a of the exhaust pipe 103, thereby clogging the exhaust pipe 103 with the crystals. Consequently, the acidic and alkaline mists within the drain tank 102 may sometimes flow into the treatment chamber 201 along with the chemical atmosphere (the second gas) via the first branch pipe 8c and the first drain pipe 8b.

[0166] The acidic mist and alkaline mist flowing into the processing chamber 201 through the first drain pipe 8b, like the acidic mist and alkaline mist generated within the processing chamber 201, may precipitate crystals on the target surface within the processing chamber 201. Furthermore, there is a possibility that particles may be generated due to the chemical liquid atmosphere flowing into the processing chamber 201 through the first drain pipe 8b.

[0167] In this embodiment, the inner wall surface 102a of the drain box 102 is hydrophobic, making it difficult for crystals to precipitate there. Consequently, the opening of the drain box 102, which connects the interior space of the drain box 102 with the exhaust pipe 103, is less likely to become clogged. Furthermore, the inner surface 103a of the exhaust pipe 103 is hydrophobic, making it difficult for crystals to precipitate there. Consequently, the problem of the exhaust pipe 103 being clogged by crystals is less likely to occur.

[0168] Therefore, according to this embodiment, the chemical atmosphere, acid mist, and alkaline mist are less likely to flow back from the drain tank 102 toward the processing chamber 201. As a result, the possibility of the substrate W being contaminated by particles can be reduced.

[0169] Furthermore, the inner wall surface 102a of the drain box 102 may be hydrophobicized in its entirety or in part. Specifically, only the portion of the inner wall surface 102a located above a predetermined water level may be hydrophobicized. Alternatively, only the top surface of the inner wall surface 102a may be hydrophobicized. The predetermined water level may be a predetermined full water level or a level higher than the predetermined full water level.

[0170] [Second embodiment]

[0171] Next, refer to Figure 9 and Figure 10 A second embodiment of the present invention will be described. However, only matters different from the first embodiment will be described, and descriptions of matters common to the first embodiment will be omitted. The second embodiment differs from the first embodiment in that the substrate processing apparatus 100 further includes a mist supply unit 300 .

[0172] Figure 9 1 is a cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing apparatus 100 according to the second embodiment. Figure 9 As shown, the substrate processing apparatus 100 further includes a mist supply unit 300 . The mist supply unit 300 includes a mist nozzle 301 .

[0173] The second mist, which is a mist that does not wet the hydrophobized surface TS, is ejected from the mist nozzle 301 toward the hydrophobized surface TS. In other words, the second mist, which contains particles having a particle size (diameter) that is too small to wet the hydrophobized surface TS, is ejected toward the hydrophobized surface TS. As a result, the second mist is supplied to the hydrophobized surface TS via the mist supply unit 300. In the second embodiment, the second mist is ejected from the mist nozzle 301 toward the lower surface 231 of the rectifying plate 23 and the inner wall surface 203a of the processing chamber 201 (sidewall 203).

[0174] Figure 10 1 is another cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing apparatus 100 according to the second embodiment. Figure 10 The inside of the substrate processing unit 2 is shown as viewed from the bottom.

[0175] like Figure 10 As shown, the mist supply unit 300 further includes a storage unit 302 , a water vapor generation heater 303 , a water vapor pipe 304 , a water vapor on-off valve 305 , and a flow control valve 306 .

[0176] The storage unit 302 stores pure water. The steam generating heater 303 heats the pure water stored in the storage unit 302 to generate steam. One end of the steam pipe 304 is connected to the storage unit 302. The steam generating heater 303 is controlled by the control unit 11.

[0177] The other end of the steam pipe 304 is connected to the mist nozzle 301 . The steam pipe 304 is a tubular member through which steam flows, and allows steam flowing from the storage unit 302 into the steam pipe 304 to flow to the mist nozzle 301 .

[0178] The steam on-off valve 305 is provided on the steam pipe 304. The steam on-off valve 305 can be switched between an open state and a closed state. The controller 11 controls the opening and closing of the steam on-off valve 305. The actuator of the steam on-off valve 305 is, for example, a pneumatic actuator or an electric actuator.

[0179] When the steam on-off valve 305 is opened, steam flows into the mist nozzle 301 via the steam pipe 304. When the steam on-off valve 305 is closed, the flow of steam into the mist nozzle 301 is stopped. The steam flowing into the mist nozzle 301 is atomized by the mist nozzle 301 and ejected from the mist nozzle 301.

[0180] The flow control valve 306 is provided in the water vapor piping 304. The flow control valve 306 controls the flow rate of water vapor flowing in the water vapor piping 304. Specifically, the flow control valve 306 can be opened with a controlled degree, and the flow rate of water vapor flowing in the water vapor piping 304 is a size corresponding to the opening degree of the flow control valve 306. The actuator of the flow control valve 306 is, for example, an electric actuator. The flow control valve 306 can be, for example, a motor needle valve. The opening degree of the flow control valve 306 is controlled by the control unit 11. The control unit 11 controls the opening degree of the flow control valve 306 so that mist is ejected from the mist nozzle 301 to an extent that does not wet the hydrophobic surface TS.

[0181] The control unit 11 can control the mist supply unit 300 to periodically supply the second mist toward the hydrophobized surface TS. Specifically, the control unit 11 can spray the second mist from the mist nozzle 301 every time a fixed time has elapsed. More specifically, the control unit 11 can switch the water vapor on-off valve 305 from a closed state to an open state every time a specified time has elapsed. Furthermore, the control unit 11 can switch the water vapor on-off valve 305 from an open state to a closed state when a specified time has elapsed since the water vapor on-off valve 305 was switched to the open state.

[0182] Next, refer to Figure 10 The mist nozzle 301 is described below. The mist nozzle 301 extends along the sidewall 203 of the processing chamber 201. The mist nozzle 301 is a tubular member, and water vapor flowing into the mist nozzle 301 from the water vapor pipe 304 circulates within the mist nozzle 301. The mist nozzle 301 has multiple ejection ports that open toward the inner wall surface 203a of the sidewall 203 and are arranged along the sidewall 203 of the processing chamber 201. Furthermore, the mist nozzle 301 has multiple ejection ports that open toward the lower surface 231 of the rectifying plate 23 and are arranged along the sidewall 203 of the processing chamber 201. The second mist is ejected from each ejection port.

[0183] Above, refer to Figure 9 and Figure 10The second embodiment of the present invention has been described. According to the second embodiment, mist (second mist) is supplied to the hydrophobized surface TS to a degree that does not wet the hydrophobized surface TS. As a result, the mist or fog is less likely to adhere to the hydrophobized surface TS.

[0184] In addition, in reference Figure 9 and Figure 10 In the embodiment described, the second mist is supplied to the inner wall surface 203a of the processing chamber 201 (side wall 203) and the lower surface 231 of the rectifying plate 23. However, the substrate processing apparatus 100 may include a structure for supplying the second mist to other hydrophobic surfaces TS. For example, the substrate processing apparatus 100 may also include a structure for supplying the second mist to the inner surface 205a of the gate 205, the surface 91a of the exhaust damper 91 (see Figure 9 ) and a structure for supplying the second mist to at least one of the outer surface 431 of the lower portion 43a.

[0185] In the second embodiment, the substrate processing apparatus 100 is provided with a mist supply unit 300. However, the substrate processing apparatus 100 may also include a water repellent supply unit for supplying a water repellent to the hydrophobized surface TS. Providing the water repellent supply unit in the substrate processing apparatus 100 allows for regular supply of the water repellent to the hydrophobized surface TS. Consequently, the hydrophobicity of the hydrophobized surface TS can be maintained.

[0186] Above, with reference to the accompanying drawings ( Figures 1 to 10 ) describe multiple embodiments of the present invention. However, the present invention is not limited to the above-mentioned embodiments and can be implemented in various ways within the scope of the gist thereof. In addition, the multiple structural elements disclosed in the above-mentioned embodiments can be appropriately changed. For example, a structural element of all the structural elements shown in a certain embodiment can be added to the structural elements of other embodiments, or some structural elements of all the structural elements shown in a certain embodiment can be deleted from the embodiment.

[0187] To facilitate understanding of the invention, the accompanying drawings schematically illustrate the various structural elements. The thickness, length, number, spacing, etc. of the structural elements shown in the drawings may differ from the actual ones for the sake of drawing convenience. In addition, the structures of the various structural elements shown in the above embodiments are merely examples and are not particularly limited. Various modifications can be made without departing from the essence of the effects of the present invention.

[0188] For example, any chemical liquid can be any chemical liquid that produces a mist or fog that precipitates crystals on the target surface, and can be a chemical liquid other than SPM or SC1. Furthermore, while the embodiments of the present invention have been described using examples of acidic and alkaline mists causing crystals to precipitate on the target surface, the chemical liquid mist that precipitates crystals on the target surface may be derived from any other type of mist. For example, crystals may sometimes precipitate from a mist derived from fluoronitric acid. Fluoronitric acid is a mixture of hydrofluoric acid and nitric acid (HNO3).

[0189] In addition, in reference Figures 1 to 10 In the illustrated embodiment, the hydrophobic surface TS includes the inner wall surface 203a of the processing chamber 201 (side wall 203), the inner surface 205a of the gate 205, the lower surface 231 of the rectifying plate 23, the outer surface 431 of the lower portion 43a, the surface 91a of the exhaust damper 91, the inner surface 101a of the second exhaust duct 101, the inner wall surface 102a of the drain box 102 and the inner surface 103a of the exhaust piping 103, but it is sufficient that at least one of these target surfaces is included in the hydrophobic surface TS.

[0190] In addition, in reference Figures 1 to 10 In the described embodiment, the immersion treatment is performed, but the immersion treatment may be omitted.

[0191] In addition, in reference Figures 1 to 10 In the embodiment described, three substrate processing units 2 are stacked one above the other. However, the number of stacked substrate processing units 2 is not limited to three. The number of stacked substrate processing units 2 can be two or more. Alternatively, the substrate processing units 2 may not be stacked one above the other.

[0192] In addition, in reference Figures 1 to 10 In the illustrated embodiment, the substrate holding portion 3 is a clamping chuck in which a plurality of chuck members 32 contact the peripheral end surface of the substrate W. However, the method for holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the substrate holding portion 3 may be a vacuum chuck or a Bernoulli chuck.

[0193] The present invention is useful in an apparatus for processing a substrate.

[0194] This application claims priority based on Japanese Patent Application No. 2024-023884 filed on February 20, 2024, the entire contents of which are incorporated herein by reference.

Claims

1. A substrate processing apparatus for processing a substrate by supplying a chemical solution to the substrate, characterized in that: A target component is provided, the target component having a hydrophobized surface as a hydrophobized surface, The hydrophobized surface is a surface exposed to the first mist as mist generated from the chemical liquid or the mist generated from the chemical liquid, and is a surface not expected to come into contact with the chemical liquid or the droplets of the chemical liquid.

2. The substrate processing apparatus according to claim 1, wherein: Also features: a processing chamber having an opening, wherein the substrate is carried into the processing chamber through the opening; a gate for opening and closing the opening; an air supply mechanism for supplying air from above the processing chamber into the processing chamber; a rectifying plate for rectifying the air sent from the air supply mechanism into the processing chamber; a substrate holding portion for horizontally holding the substrate in the processing chamber; a substrate rotating portion that rotates the substrate and the substrate holding portion integrally; a discharge nozzle configured to discharge the chemical solution toward the substrate held by the substrate holding portion; a liquid receiving portion that surrounds the substrate held by the substrate holding portion and receives the chemical liquid discharged from the substrate; a first exhaust duct for exhausting a first gas, which is the gas in the processing chamber, to the outside of the processing chamber; a second exhaust duct disposed outside the processing chamber, into which the first gas exhausted from the first exhaust duct flows; an exhaust damper for adjusting a flow rate of the first gas flowing from the first exhaust duct into the second exhaust duct; a liquid discharge pipe for discharging the liquid from the interior of the treatment chamber to the outside; a drain tank storing the chemical solution discharged from the interior of the treatment chamber to the outside via the drain pipe; and an exhaust pipe for discharging the second gas, which is the gas in the drain box, to the outside of the drain box, The substrate rotating unit has: a driving portion that generates a driving force for rotating the substrate and the substrate holding portion integrally; and a cover portion that covers the driving portion, The hydrophobic surface includes at least one of the inner wall surface of the processing chamber, the inner surface of the gate, the lower surface of the rectifying plate, the inner surface of the second exhaust duct, the surface of the exhaust damper, the inner surface of the exhaust piping, the portion of the outer surface of the cover portion that is located below the liquid receiving portion, and the inner wall surface of the drain box.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The hydrophobized surface is processed into a concavo-convex shape that increases the contact angle of fine particles of the chemical solution constituting the first mist or the fog.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The chemical solution includes a first chemical solution which is an acidic chemical solution and a second chemical solution which is an alkaline chemical solution. The first mist includes mist generated from the first chemical liquid and mist generated from the second chemical liquid.

5. The substrate processing apparatus according to claim 4, wherein: The first liquid contains hydrogen peroxide or sulfuric acid. The second chemical solution contains SC1.

6. The substrate processing apparatus according to claim 1 or 2, wherein: The invention further includes a mist supply unit that supplies a second mist toward the hydrophobized surface, the mist being of a level that does not wet the hydrophobized surface.

7. The substrate processing apparatus according to claim 1 or 2, wherein: The invention further includes a water repellent supply unit for supplying a water repellent toward the hydrophobized surface.

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