Impact control method, device and storage medium for coating of semiconductor equipment

Abstract

This application relates to the technical field of semiconductor manufacturing and discloses a method, device, and storage medium for impact control of semiconductor equipment coating application. The method comprises: securing the equipment to a mounting fixture, extracting data on the inner surface area and inner diameter of the processing pipeline, calculating a first temporary value, a second temporary value, and a combined temporary value, and adjusting the coating injection volume based on the combined temporary value; rotating the equipment so that the injection end faces upward, controlling the equipment to raise and lower at different speeds into an impact state, and then, after buffering, cyclically impacting until the coating flow rate at the outflow end meets the standard, and resetting the equipment. This solution solves the problems of long coating times and uneven coverage associated with traditional Teflon coatings applied to small-diameter pipelines, significantly improving the efficiency and uniformity of semiconductor equipment coatings.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an impact control method, device and storage medium for coating of semiconductor equipment. Background Art

[0002] In recent years, semiconductor chip manufacturing has been rapidly developing towards smaller processes and higher levels of integration, placing stringent demands on the performance of chip manufacturing equipment. To achieve advanced process technology, the internal structures of equipment are becoming increasingly sophisticated and complex, requiring components to possess higher precision and stability.

[0003] In the semiconductor etching process, highly corrosive gases such as fluorides are often used to precisely etch chip materials. When these gases flow through ventilation ducts, they can severely corrode the inner walls of the ducts, leading to premature failure and increased risk of gas leaks, seriously impacting production safety and efficiency. To improve the corrosion resistance of pipelines, Teflon coatings have become a common practice in the industry. Teflon's excellent chemical inertness and corrosion resistance effectively prevent corrosive gases from contacting the duct substrate, enhancing the durability and reliability of the ducts.

[0004] While Teflon coatings can significantly improve the corrosion resistance of pipes, their high viscosity and poor fluidity make it difficult to quickly and evenly coat the interior surfaces of smaller-diameter pipes, such as those found in large components. Existing processes require significant time to allow the Teflon to flow and distribute evenly, significantly slowing production. Summary of the Invention

[0005] In order to speed up the production progress, the present application provides an impact control method, device and storage medium for coating of semiconductor equipment.

[0006] In a first aspect, the present application provides a method for controlling the impact of coating on a semiconductor device, which adopts the following technical solution:

[0007] A method for controlling impact during coating of a semiconductor device comprises the following steps:

[0008] fixing the semiconductor device on the mounting fixture in an initial mounting state;

[0009] Acquiring data of the semiconductor device, extracting process pipeline data from the semiconductor device data, the process pipeline data including an inner surface area and an inner diameter, calculating a first temporary value based on the inner surface area and a preset reference area, calculating a second temporary value based on the inner diameter and a preset reference inner diameter, and calculating a combined temporary value based on the first temporary value and the second temporary value;

[0010] injecting a coating material into the processing pipeline, and adjusting the amount of the coating material in a positive correlation according to the comprehensive temporary value;

[0011] driving the semiconductor device to rotate until the injection end of the processing pipeline faces upward;

[0012] Entering an impact state: controlling the semiconductor device to be lifted to a preset first height at a preset first speed, and controlling the semiconductor device to reach a preset second height at a preset second speed, wherein the second speed is greater than the first speed, and the second height is lower than the first height;

[0013] After buffering the impact of the semiconductor device for a preset first time period, the impact state continues to be entered until the flow rate of the coating material flowing out of the outflow end of the processing pipeline is greater than a preset first flow rate;

[0014] The shock state is exited, and the semiconductor device is reset to the initial installation state.

[0015] By adopting the above technical solution, a comprehensive temporary value is calculated based on the inner surface area and inner diameter of the semiconductor equipment processing pipeline, and the coating injection amount is adaptively adjusted. Then, by controlling the equipment to perform impact motion at different speeds and heights, inertia and gravity are used to accelerate the flow of high-viscosity coating in the pipeline. Combined with a buffering and cyclic impact mechanism, the coating is applied evenly to the inner wall of the pipeline and reaches the preset flow rate. Compared with the traditional Teflon coating process that takes a long time and has uneven coverage in small-diameter pipelines, this method greatly improves the efficiency and uniformity of semiconductor equipment coating.

[0016] Optionally, the method further comprises the following steps:

[0017] Acquiring data of the semiconductor device, and extracting weight data, pipeline length, pipeline direction, and pipeline inner diameter from the data of the semiconductor device;

[0018] Dividing all the pipeline directions into multiple direction groups, and sorting the multiple direction groups according to the operation order;

[0019] Calculate the maximum length and total length corresponding to each direction group;

[0020] Calculating a first reference value according to the maximum length and a preset first reference length, and adjusting the first duration in a positive correlation according to the first reference value;

[0021] A second reference amount is calculated according to the total length and a preset second reference length, and the first flow rate is adjusted in a positive correlation according to the second reference amount.

[0022] By adopting the above technical solution, the pipeline directions can be scientifically grouped and sorted based on the weight data, pipeline length, direction, inner diameter and other information of the semiconductor equipment, and the maximum length and total length of each direction group can be accurately calculated; the first duration of the impact buffer can be dynamically adjusted according to the maximum length to ensure that pipelines of different lengths have an adaptive buffer time during the impact process to avoid excessive impact. At the same time, the first flow standard of the outflow end is adjusted according to the total length to improve the flow and coverage effect of the coating.

[0023] Optionally, the method further comprises the following steps:

[0024] Calculating a third reference value based on a weighted average of the first reference value and the second reference value;

[0025] The first speed is adjusted in positive correlation with a first gain coefficient according to the third reference amount, and the second speed is adjusted in positive correlation with a second gain coefficient according to the third reference amount, wherein the first gain coefficient is smaller than the second gain coefficient.

[0026] By adopting the above technical solution, a weighted average of the first and second reference quantities reflecting pipeline characteristics is taken to obtain a third reference quantity that comprehensively considers pipeline length and layout factors. The first and second speeds are then adjusted using different gain coefficients, achieving differentiated and precise control of the impact motion speed of semiconductor equipment. This ensures that the equipment can achieve rapid flow and uniform distribution of coating materials at an appropriate speed based on the pipeline structural characteristics during the impact process, while avoiding paint splashing or impact damage caused by excessive speed. At the same time, by setting different gain coefficients, the acceleration changes of the impact motion are optimized, achieving more efficient distribution of coating materials within complex pipelines, significantly improving the quality and efficiency of coating application.

[0027] Optionally, the step of detecting the flow rate of the coating material flowing out of the outflow end of the processing pipeline further includes the following sub-steps:

[0028] positioning a plurality of said outflow ends;

[0029] Aim at the plurality of outflow ends to acquire outflow images in real time;

[0030] Calculating the area data of the coating paint flowing out from the outflow image according to a preset paint template as the flow rate;

[0031] Calculate a plurality of discrete values ​​of the flow rate, and if the discrete value is greater than a preset discrete reference value, issue a paint warning.

[0032] By adopting the above technical solution, the flow state of the coating is visualized and quantitatively monitored by locating the outflow end, acquiring images in real time, and calculating area data as flow rate based on the coating template. Furthermore, by calculating the discrete values ​​of multiple flow rates and comparing them with discrete reference values ​​to trigger coating early warning, it is possible to promptly detect abnormal conditions such as uneven distribution of coating paint at the outflow ends of each pipeline, such as local blockage, too thin or too thick coating, and other problems.

[0033] Optionally, the method further comprises the following steps:

[0034] If the discrete value is less than the discrete reference value, calculating the difference between the discrete reference value and the discrete value as a discrete difference;

[0035] The first height is adjusted according to the positive correlation of the discrete difference, and the second height remains unchanged; the larger the discrete difference is, the higher the first height is; the smaller the discrete difference is, the lower the first height is;

[0036] Alternatively, the second height is adjusted in anticorrelation according to the discrete difference, and the first height remains unchanged; the larger the discrete difference, the lower the second height; the smaller the discrete difference, the higher the second height; or, the height difference between the first height and the second height is adjusted in anticorrelation according to the discrete difference; the larger the discrete difference, the smaller the height difference between the first height and the second height; the smaller the discrete difference, the larger the height difference between the first height and the second height.

[0037] By employing this technical solution, the coating's paint distribution uniformity is dynamically optimized based on the comparison of discrete flow values ​​with discrete reference values. When the discrete value is less than the reference value, the device's impact motion parameters are precisely fine-tuned by calculating the discrete difference and adjusting the first height in a positive correlation, the second height in an anti-correlated manner, or the difference between the two heights. When the paint distribution is relatively uniform but subtle variations still exist, the impact amplitude and force can be adaptively adjusted to avoid paint waste due to excessive impact or uneven coating due to insufficient impact, effectively improving process stability while ensuring coating quality.

[0038] Optionally, the step of injecting coating material into the processing pipeline includes the following sub-steps:

[0039] Based on the obtained injection instruction, record the injection start time;

[0040] positioning a plurality of said injection ports;

[0041] Aligning the plurality of injection ends to acquire injection images in real time;

[0042] Calculating area data of the injected coating paint from the injection image according to a preset paint template as the injection data;

[0043] When the injection data stops increasing, the injection stop time is recorded;

[0044] Calculating an injection duration according to the injection start time and the injection stop time, and calculating an actual reference value according to the injection duration and a preset reference injection duration;

[0045] The comprehensive temporary value is adjusted in a positive correlation according to the actual reference value; the larger the actual reference value is, the larger the comprehensive temporary value is; the smaller the actual reference value is, the smaller the comprehensive temporary value is.

[0046] By adopting the above technical solution, the paint injection process can be accurately monitored by recording the injection time, obtaining the injection image in real time and calculating the injection area data; based on the time node when the injection data stops increasing, the actual reference value is calculated in combination with the preset reference injection time, and then the comprehensive temporary value is positively adjusted to ensure that the paint usage is accurately matched with the pipeline structure and coating requirements, avoiding insufficient or excessive paint.

[0047] Optionally, the method further comprises the following steps:

[0048] Calculating a single hole injection point of the injected coating material from the injection image;

[0049] The single hole injection point is divided into a small hole area and a large hole area according to a preset area threshold;

[0050] Calculate the small hole ratio of the single hole injection point to all the single hole injection points;

[0051] The rotation speed of the semiconductor device is adjusted inversely according to the pinhole ratio; the larger the pinhole ratio, the smaller the rotation speed of the semiconductor device; the smaller the pinhole ratio, the greater the rotation speed of the semiconductor device.

[0052] By employing this technical solution, through in-depth analysis of the injection image, the coating's single-hole injection points are identified and classified by area. The ratio of small-hole area injection points is calculated, and the rotation speed of the semiconductor equipment is then adjusted inversely, achieving refined dynamic control of the coating process. When the small-hole ratio is high, it indicates that the pipeline has a large number of small-diameter areas. In this case, reducing the equipment rotation speed can slow the flow of the coating, preventing overflow or uneven distribution of the coating in small-diameter pipelines due to excessive rotation. Conversely, when the small-hole ratio is low, increasing the rotation speed can accelerate the flow and filling efficiency of the coating in large-diameter pipelines.

[0053] Optionally, the method further comprises the following steps:

[0054] Calculate the macropore ratio of the single-hole injection point to all the single-hole injection points in the macropore area;

[0055] The buffering amplitude of the impact of the semiconductor device is adjusted inversely according to the large pore ratio; the larger the large pore ratio, the smaller the buffering amplitude of the impact of the semiconductor device; the smaller the large pore ratio, the larger the buffering amplitude of the impact of the semiconductor device.

[0056] By employing this technical solution, the company calculates the ratio of single-hole injection points to macropore area (the macropore ratio) and uses this to inversely adjust the impact buffering amplitude of semiconductor equipment, achieving precise and intelligent impact control in the coating process. When the macropore ratio is high, indicating a high number of large-diameter areas in the pipeline, reducing the buffering amplitude can enhance the impact force, promoting rapid and sufficient flow and distribution of the coating in large-diameter pipelines. When the macropore ratio is low, increasing the buffering amplitude can mitigate the impact intensity, preventing paint splashing and accumulation in small-diameter pipelines due to excessive impact.

[0057] In a second aspect, the present application provides an impact control device for coating semiconductor equipment, which adopts the following technical solution:

[0058] A device for controlling the impact of coating on a semiconductor device comprises a processor, wherein the processor executes the steps of any one of the above-mentioned methods for controlling the impact of coating on a semiconductor device.

[0059] In a third aspect, the present application provides a storage medium that adopts the following technical solution:

[0060] A storage medium stores a program, which, when executed by a processor, implements the steps of any one of the above-mentioned methods for controlling the impact of coating on a semiconductor device.

[0061] To sum up, the present application includes at least one of the following beneficial technical effects: by calculating a comprehensive temporary value based on data such as the inner surface area and inner diameter of the processing pipeline to adjust the amount of coating injection, combining equipment rotation and impact movements of different speeds and heights to accelerate the flow of coating, and at the same time using pipeline direction grouping, flow discrete value analysis, etc. to achieve dynamic adjustment of parameters such as the first duration, speed, and height difference, and adopt differentiated rotation speed and buffer amplitude control for small-aperture and large-aperture pipelines; closed-loop monitoring and parameter adaptation of the entire process from coating injection to impact coating to improve the efficiency of coating of semiconductor equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 A step-by-step diagram of a method for controlling impact during coating of a semiconductor device.

[0063] Figure 2It is a schematic diagram of the semiconductor device installation structure of an embodiment of the present application.

[0064] Figure 3 This is a step-by-step diagram for differentiated treatment of pipelines in different directions and lengths.

[0065] Figure 4 This is a diagram of the steps for injecting coating material into the process pipeline.

[0066] Figure numerals: 1. mounting fixture; 2. component; 3. ventilation duct. DETAILED DESCRIPTION

[0067] Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings.

[0068] Throughout this specification, reference to the terms "certain embodiments," "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0069] The present application discloses a method for controlling the impact of coating on a semiconductor device, referring to Figure 1 , including the following steps:

[0070] Fix the semiconductor device on the mounting fixture 1 in the initial mounting state; Figure 2 In this embodiment, the semiconductor device is component 2 of a semiconductor etching apparatus. Component 2 is provided with a ventilation duct 3, the inner wall of which is coated with Teflon. The mounting fixture 1 utilizes a three-dimensionally adjustable structure, using vacuum adsorption or mechanical clamping to ensure that the device does not move or deviate during the coating process.

[0071] Acquire semiconductor device data and extract process pipeline data from the semiconductor device data. The process pipeline data includes the inner surface area and inner diameter. A first temporary value, K1, is calculated based on the inner surface area and a preset reference area. The first temporary value is calculated as follows: K1 = S / S0, where S is the measured inner surface area and S0 is the preset reference area, such as 100 cm². A second temporary value, K2, is calculated based on the inner diameter and a preset reference inner diameter. The second temporary value is calculated as follows: K2 = D / D0, where D is the measured inner diameter and D0 is the preset reference inner diameter, such as 5 mm. A comprehensive temporary value, K, is calculated based on the first and second temporary values. The comprehensive temporary value is calculated as follows: K = α × K1 + β × K2, where α and β are weight coefficients, α = 0.5 and β = 0.5 respectively.

[0072] Inject coating paint into the processing pipeline and adjust the amount V of coating paint according to the comprehensive temporary value K; the calculation formula is: V=V0×(1+γ×K), where V0 is the basic injection amount, such as 50ml, and γ is the adjustment coefficient, such as 0.2.

[0073] The semiconductor equipment is driven to rotate around a horizontal axis, with the injection end of the processing pipeline facing upward, within an angle of 180°±2°. The rotation process is driven by a servo motor with an angular velocity of 5° / s to ensure that the paint in the pipeline is not splashed due to rapid rotation.

[0074] Entering the impact state: controlling the semiconductor device to be lifted to a preset first height in the direction of gravity at a preset first speed, and controlling the semiconductor device to reach a preset second height in the direction of gravity at a preset second speed, wherein the second speed is greater than the first speed, and the second height is lower than the first height.

[0075] This embodiment adopts a dual-speed dual-height impact motion mode:

[0076] Stage 1: Lift to a preset first height h1, such as 30 cm, at a preset first speed v1, such as 50 cm / s;

[0077] The second stage: descending to a preset second height h2, such as 10 cm, at a preset second speed v2, such as 100 cm / s, forming a height difference Δh=20 cm.

[0078] This motion mode is achieved through cylinders or linear motors, with a displacement control accuracy of ±0.1mm.

[0079] After buffering the impact of the semiconductor device for a preset first time period (such as 2s), the impact state is cyclically executed until the flow rate of the coating material flowing out of the outflow end of the processing pipeline is greater than a preset first flow rate, such as 10ml / min.

[0080] Exit the shock state and reset the semiconductor device to the initial installation state.

[0081] By measuring the internal surface area and inner diameter of semiconductor equipment processing pipelines, a comprehensive temporary value is constructed to adaptively control the coating injection volume. By using the equipment's impact motion at different speeds and heights, the synergistic effect of inertia and gravity accelerates the flow and diffusion of high-viscosity coatings within the pipelines. Combined with a buffering mechanism and a cyclic impact strategy, the coating distribution is continuously optimized until the inner wall of the pipeline is evenly covered and the outflow flow rate meets the preset standard. Compared to the technical bottlenecks of traditional Teflon coatings in coating small-diameter pipelines, such as lengthy and uneven coverage, this method significantly improves the efficiency and coating uniformity of the semiconductor equipment coating process.

[0082] Reference Figure 3 In order to achieve differentiated processing of pipelines in different directions and lengths, the method further includes the following steps:

[0083] Data from semiconductor equipment is obtained, and weight data, pipeline length, pipeline direction, and pipeline inner diameter are extracted from the semiconductor equipment data. All pipeline directions are divided into multiple direction groups, and the multiple direction groups are sorted according to the order of operation. Taking a certain etching device component 2 as an example, it contains ventilation pipes 3 with three directions: horizontal, vertical, and inclined. The total weight is 45kg, the total length of the pipe is 1.8cm, and the inner diameter range is 3-6mm. Then, according to the spatial direction of the pipes, they are divided into three direction groups: direction group A (horizontal direction, total length 0.7cm, maximum single pipe length 0.5cm), direction group B (vertical direction, total length 0.6cm, maximum single pipe length 0.6cm), and direction group C (45° inclined direction, total length 0.5cm, maximum single pipe length 0.4cm). They are sorted in the order of "vertical → inclined → horizontal" to prioritize the use of gravity to assist the flow of paint in vertical pipes.

[0084] Calculate the maximum length and total length corresponding to each direction group; calculate a first reference quantity based on the maximum length and a preset first reference length, and adjust the first duration in a positive correlation based on the first reference quantity; calculate a second reference quantity based on the total length and a preset second reference length, and adjust the first flow in a positive correlation based on the second reference quantity.

[0085] Taking direction group B as an example, its maximum length is 0.6cm, and the preset first reference length is 0.5cm. The first reference quantity M1 is calculated as 0.6 / 0.5=1.2, and the first duration t2 of the impact buffer is adjusted in a positive correlation according to M1. Assuming the basic duration t0=2s, the adjusted t1=2×1.2=2.4s ensures that the long pipeline has more sufficient buffer time after the impact to avoid paint splashing or equipment damage due to excessive inertia. At the same time, for the total pipeline length of 1.8cm, the preset second reference length is 1.5cm, and the second reference quantity M2=1.8 / 1.5=1.2 is calculated, and the first flow standard Q0 at the outflow end is adjusted in a positive correlation. If the basic flow Qbase=10ml / min, the adjusted Q0=10×1.2=12ml / min makes the paint flow standard match the overall length of the pipeline, ensuring that the long pipeline system is fully covered with paint before terminating the coating process.

[0086] The paint flow priority is optimized based on directional grouping sorting, the first time length is dynamically adjusted through the maximum length to adapt to the pipeline structure, and the flow standard is adjusted according to the total length to ensure the overall coverage effect. This effectively solves the uneven coating problem caused by the unified setting of impact parameters in complex pipeline systems. After testing, the coating uniformity error of multi-directional pipelines can be further reduced.

[0087] The method further comprises the steps of:

[0088] The third reference quantity is calculated by taking the weighted average of the first and second reference quantities. For example, in directional group B, the first reference quantity M1 is 1.2, and the second reference quantity M2 for the equipment's main pipeline is 1.2. With weight coefficients α = 0.6 (first reference quantity weight) and β = 0.4 (second reference quantity weight), the third reference quantity M3 is calculated as α × M1 + β × M2 = 0.6 × 1.2 + 0.4 × 1.2 = 1.2. This calculation method takes into account the buffering requirements of the longest pipeline in a single directional group and the impact of the overall pipeline length on paint flow.

[0089] The first speed is adjusted in positive correlation with the first gain coefficient according to the third reference amount. Taking the basic first speed v1_base=50cm / s as the benchmark, the first gain coefficient k1=0.3, and the adjusted first speed v1=v1_base×(1+k1×M3)=50×(1+0.3×1.2)=68cm / s.

[0090] The second velocity is adjusted in a positive correlation with the second gain coefficient based on the third reference variable, where the first gain coefficient is smaller than the second gain coefficient. Based on the base second velocity v2_base = 100 cm / s, the second gain coefficient k2 = 0.5 (k2 > k1). The adjusted second velocity v2 = v2_base × (1 + k2 × M3) = 100 × (1 + 0.5 × 1.2) = 160 cm / s. By setting k2 > k1, the second velocity's gain is greater than the first velocity, intensifying the acceleration change during the descent phase, creating a slow-rise-and-sudden-descent impact pattern and more effectively utilizing inertia to propel the paint through the pipeline.

[0091] When the pipeline is long or the direction is complex, the M3 value increases, and v1 and v2 increase simultaneously. However, because k2>k1, the increase in v2 is greater, resulting in a significant increase in the impact acceleration, which can break through the paint flow resistance in the long pipeline; at the same time, the moderate increase in v1 avoids the increase in process time caused by too slow lifting speed.

[0092] The step of detecting the flow rate of the coating material flowing out of the outflow end of the processing pipeline further includes the following sub-steps:

[0093] Multiple outflow ends are located and aligned to capture outflow images in real time. Miniature industrial cameras are installed at the outflow ends of each semiconductor device pipe. For example, the vertical pipes in direction group B, whose outflow ends are located at the bottom of the device, were installed at a 45° elevation angle through 3D modeling to ensure complete capture of the paint outflow cross-section. After the system is started, each camera simultaneously captures outflow images and transmits them to the image processing unit.

[0094] Based on a preset paint template, the area of ​​the outflowing coating is calculated from the outflow image as the flow rate. Teflon coating color thresholds (e.g., RGB range 230-255, 230-255, 230-255) and morphological characteristics (circularity ≥ 0.8) are preset, and template matching is performed on the live image using the OpenCV library. For outflow images from direction group B, Canny edge detection combined with Hough transform is used to identify the coating area contours and calculate their area. The area data S (unit: mm²) is converted to the flow rate Q (unit: ml / min) using the following formula: Q = S × v × ρ × 60, where v is the coating flow rate in cm / s (preset value or measured using particle imaging velocimetry); ρ is the coating density in g / cm³ (Teflon density is approximately 2.2 g / cm³); and 60 is the time conversion factor (1 minute = 60 seconds).

[0095] Calculate the discrete values ​​of multiple flow rates. If the discrete value exceeds the preset discrete reference value, a paint warning is issued. For the three outflow ports included in direction group B, the flow discrete value σ = √[Σ(Qi-Qavg)² / n] is calculated in real time, where Qi is the flow rate at the i-th outflow port, Qavg is the average flow rate, and n = 3; √ is the square root function.

[0096] By deploying visual monitoring equipment at the outflow ends of each processing pipeline, real-time images of paint outflow are captured. These images are analyzed and processed using pre-set paint templates, converting paint outflow area data into flow parameters. This enables visual, digital monitoring of paint flow status. Furthermore, by calculating discrete flow values ​​at multiple outflow ends and comparing them with pre-set discrete reference values, an anomaly detection mechanism is established. When the discrete value exceeds the reference threshold, the system immediately triggers a paint warning, accurately identifying potential problems in the pipeline, such as localized blockages and uneven coating thickness.

[0097] The method further comprises the steps of:

[0098] If the discrete value is less than the discrete reference value, the difference between the discrete reference value and the discrete value is calculated as the discrete difference.

[0099] In this embodiment, the first and second height parameters include three adjustment modes, which can be selected according to the pipeline characteristics:

[0100] Method 1: The first height is adjusted based on the positive correlation between the discrete difference and the second height remains unchanged. A larger discrete difference increases the first height; a smaller discrete difference decreases the first height. For a base first height of 30 cm, h1_base, and an adjustment coefficient of 10 cm / ml / min, h1 = h1_base + k3 × Δσ = 30 + 10 × 0.3 = 33 cm. A larger discrete difference increases h1, enhancing potential energy accumulation during the lifting phase. This method is suitable for long pipelines requiring enhanced initial potential energy.

[0101] The second method adjusts the second height inversely based on the discrete difference, while the first height remains unchanged. A larger discrete difference lowers the second height; a smaller discrete difference raises the second height. The base second height h2_base = 10 cm, and the adjustment coefficient k4 = 5 cm / ml / min. After adjustment, h2 = h2_base - k4 × Δσ = 10-5 × 0.3 = 8.5 cm. A larger discrete difference lowers h2, increasing acceleration during descent. This method is suitable for complex directional pipelines where optimized descent impact force is required.

[0102] The third method adjusts the height difference between the first and second heights based on an inverse correlation between the discrete difference. The larger the discrete difference, the smaller the difference between the first and second heights; the smaller the discrete difference, the larger the difference between the first and second heights. The base height difference Δh_base = 20 cm (h1_base - h2_base), and the adjustment factor k5 = 8 cm / ml / min. After adjustment, Δh = Δh_base - k5 × Δσ = 20 - 8 × 0.3 = 17.6 cm. By reducing the height difference, the impact stroke is shortened, increasing the impact frequency. This is suitable for small-diameter pipelines where a higher impact frequency is required.

[0103] By establishing a quantitative comparison mechanism between discrete flow values ​​and discrete reference values, a dynamic optimization system for coating uniformity is constructed. When the discrete value of the coating flow at the outflow end of each pipeline is monitored to be lower than the reference threshold, the system will automatically calculate the difference between the two (the discrete difference) and, based on this difference, precisely control the key parameters of the equipment's impact motion: the system can choose to adjust the first height in a positive correlation with the discrete difference to enhance the initial impact potential energy; or adjust the second height in an anti-correlated manner to optimize the impact force during the descent phase; or adjust the difference between the first and second heights in an anti-correlated manner to change the impact stroke and acceleration. This flexible parameter fine-tuning strategy can adaptively match the impact amplitude and force to subtle unevenness in coating distribution, preventing both paint splashing and waste due to excessive impact and coating thickness deviation due to insufficient impact. This significantly improves the stability and reliability of the semiconductor equipment coating process while ensuring coating consistency and integrity.

[0104] Reference Figure 4 The step of injecting coating material into the processing pipeline includes the following sub-steps:

[0105] When an injection command is received, a timer is triggered to record the injection start time t_start. A visual positioning system (such as a combination of LiDAR and an industrial camera) is then used to calibrate the spatial coordinates of the multiple injection ports of the processing pipeline. For example, a three-way pipe in an etching device contains three injection ports. Subsequently, multiple high-speed cameras (at a frame rate of 100 fps) are aligned with the injection ports to capture real-time images. These images are processed using a preset Teflon coating template (based on HSV color space thresholds and morphological features). Using contour extraction and area calculation algorithms, the area data S(t) of the injected coating is acquired in real time and used as the injection data.

[0106] When the injection data S(t) stops increasing for five consecutive frames, the paint is considered to have filled the initial section of the pipeline, and the injection stop time t_end is recorded. The injection duration Δt is calculated as t_end - t_start. For example, if the measured Δt is 25 seconds and the preset reference injection duration Δt_ref is 20 seconds, the actual reference value K_ref = Δt / Δ_ref = 25 / 20 = 1.25. The comprehensive temporary value K is adjusted based on the positive correlation with K_ref using the formula K = K_prev × K_ref, where K_prev is the pre-adjusted comprehensive temporary value (e.g., 1.5). After adjustment, K = 1.5 × 1.25 = 1.875. This adjustment logic dynamically adapts the comprehensive temporary value to the actual injection duration. If the injection time increases (K_ref > 1), indicating high pipeline filling resistance or unexpected volume, the comprehensive temporary value should be increased to increase subsequent paint injection. Otherwise, the comprehensive temporary value should be decreased to avoid overinjection.

[0107] During the coating injection process, the present application further provides a mechanism for dynamically adjusting the rotation speed of the device based on the pipeline aperture distribution characteristics. The specific method further includes the following steps:

[0108] After the vision system captures the injection image, it first processes the coating area using an image segmentation algorithm. Through edge detection and morphological analysis, it identifies the outline of each injection point and calculates its area. For example, a branch line in an etching system contains 20 injection points. Using a preset area threshold, A_th = 10 mm², the system categorizes the injection points into two types: small pore area (S < A_th) and large pore area (S ≥ A_th). Calculations show that 15 injection points are classified as small pores and 5 as large pores, resulting in a small pore ratio, R_s, of 15 / 20 = 0.75.

[0109] The system inversely adjusts the semiconductor device's rotational speed ω based on the aperture ratio R_s. The base rotational speed ω_0 is set at 10 rpm, and the adjustment coefficient k6 is set at 5 rpm. The adjustment formula is ω = ω_0 - k6 × R_s. Substituting the above data, the adjusted rotational speed ω = 10-5 × 0.75 = 6.25 rpm. This adjustment logic is based on the characteristics of the pipeline aperture: when the aperture ratio is high, the pipeline has many small apertures, which increases the paint flow resistance and is prone to clogging. In this case, reducing the rotational speed can slow the paint flow within the small apertures, preventing paint overflow or accumulation at the aperture due to excessive centrifugal force. Conversely, when the aperture ratio is low, increasing the rotational speed can utilize centrifugal force to accelerate the paint flow in large-aperture pipelines, improving filling efficiency.

[0110] During the coating injection process, the present application further provides a dynamic adjustment mechanism for the impact buffer amplitude based on the large pore size distribution characteristics of the pipeline. The specific method also includes the following steps:

[0111] After the vision system completes the injection point area classification, it calculates the ratio of single-hole injection points to large-hole area (large-hole ratio). For example, the manifold structure of an etching device contains 12 injection points with a preset area threshold of 15 mm². Of these, 8 injection points have an area ≥ 15 mm², and 4 have an area less than 15 mm². Therefore, the large-hole ratio R_l = 8 / 12 ≈ 0.67. The system adjusts the impact buffering amplitude inversely based on R_l. The buffering amplitude is reflected by the damping coefficient of the hydraulic buffer. The specific adjustment logic is as follows:

[0112] The base damping coefficient C0 is set at 10 N·s / mm, and the adjustment coefficient k7 is set at 3 N·s / mm. The formula for adjusting the buffer amplitude is C = C0 - k7 × R_l. Substituting the data into this formula, the adjusted damping coefficient C = 10-3 × 0.67 ≈ 7.99 N·s / mm, indicating that the buffer amplitude decreases as the large-aperture ratio increases. The core logic of this mechanism is that when the large-aperture ratio is high, the large-aperture portion of the pipeline is large, requiring a stronger impact force to promote rapid paint filling. Therefore, the buffer amplitude is reduced (lowering the damping coefficient), weakening the deceleration effect during the equipment impact. Conversely, when the large-aperture ratio is low, the small-aperture portion of the pipeline is large, requiring a lower impact force to prevent paint splashing. Therefore, the buffer amplitude is increased, raising the damping coefficient and enhancing the buffering effect during the impact process.

[0113] When processing a semiconductor component consisting of a large-aperture main line (8mm inner diameter) and a small-aperture branch line (2mm inner diameter), the initial macropore ratio was 0.4, resulting in a large damping amplitude (damping coefficient C = 8.5N·s / mm), but paint flow was slow in the main line. Through dynamic adjustment, when the macropore ratio increased to 0.7, the damping amplitude decreased to C = 5.5N·s / mm, increasing the paint flow rate in the main line while preventing paint accumulation in the branch line. This method improves paint filling efficiency in large-aperture lines and reduces coating defect rates in small-aperture lines, achieving adaptive matching of impact parameters for lines with different apertures.

[0114] An embodiment of the present application further discloses an impact control device for coating of a semiconductor device, comprising a processor, wherein the processor executes the steps of the impact control method for coating of a semiconductor device as described in any one of the above.

[0115] An embodiment of the present application further discloses a storage medium, in which a program is stored. When the program is executed by a processor, the steps of the impact control method for coating of a semiconductor device as described above are implemented.

[0116] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A method for controlling the impact of coating on a semiconductor device, characterized in that: The steps include: Fixing the semiconductor device on the mounting fixture (1) in an initial mounting state; Acquiring data of the semiconductor device, extracting process pipeline data from the semiconductor device data, the process pipeline data including an inner surface area and an inner diameter, calculating a first temporary value based on the inner surface area and a preset reference area, calculating a second temporary value based on the inner diameter and a preset reference inner diameter, and calculating a combined temporary value based on the first temporary value and the second temporary value; injecting a coating material into the processing pipeline, and adjusting the amount of the coating material in a positive correlation according to the comprehensive temporary value; driving the semiconductor device to rotate until the injection end of the processing pipeline faces upward; Entering an impact state: controlling the semiconductor device to be lifted to a preset first height at a preset first speed, and controlling the semiconductor device to reach a preset second height at a preset second speed, wherein the second speed is greater than the first speed, and the second height is lower than the first height; After buffering the impact of the semiconductor device for a preset first time period, the impact state continues to be entered until the flow rate of the coating material flowing out of the outflow end of the processing pipeline is greater than a preset first flow rate; The shock state is exited, and the semiconductor device is reset to the initial installation state.

2. The method for controlling the impact of coating on semiconductor equipment according to claim 1, wherein: The method further comprises the steps of: Acquiring data of the semiconductor device, and extracting weight data, pipeline length, pipeline direction, and pipeline inner diameter from the data of the semiconductor device; Dividing all the pipeline directions into multiple direction groups, and sorting the multiple direction groups according to the operation order; Calculate the maximum length and total length corresponding to each direction group; Calculating a first reference value according to the maximum length and a preset first reference length, and adjusting the first duration in a positive correlation according to the first reference value; A second reference quantity is calculated according to the total length and a preset second reference length, and the first flow rate is adjusted in a positive correlation according to the second reference quantity.

3. The method for controlling the impact of coating on semiconductor equipment according to claim 2, wherein: The method further comprises the steps of: Calculating a third reference value based on a weighted average of the first reference value and the second reference value; The first speed is adjusted in positive correlation with a first gain coefficient according to the third reference amount, and the second speed is adjusted in positive correlation with a second gain coefficient according to the third reference amount, wherein the first gain coefficient is smaller than the second gain coefficient.

4. The impact control method for coating of semiconductor equipment according to claim 1, characterized in that: The step of detecting the flow rate of the coating material flowing out of the outflow end of the processing pipeline further includes the following sub-steps: positioning a plurality of said outflow ends; Aim at the plurality of outflow ends to acquire outflow images in real time; Calculating the area data of the coating paint flowing out from the outflow image according to a preset paint template as the flow rate; Calculate a plurality of discrete values ​​of the flow rate, and if the discrete value is greater than a preset discrete reference value, issue a paint warning.

5. The method for controlling impact of coating on semiconductor equipment according to claim 4, wherein: The method further comprises the steps of: If the discrete value is less than the discrete reference value, calculating the difference between the discrete reference value and the discrete value as a discrete difference; Adjusting the first height in a positive correlation with the discrete difference, while keeping the second height unchanged; The larger the discrete difference is, the higher the first height is; the smaller the discrete difference is, the lower the first height is; Alternatively, the second height is adjusted in anti-correlation according to the discrete difference, while the first height remains unchanged; The larger the discrete difference is, the lower the second height is; the smaller the discrete difference is, the higher the second height is; or, the height difference between the first height and the second height is adjusted in anticorrelation according to the discrete difference; The larger the discrete difference is, the smaller the height difference between the first height and the second height is; and the smaller the discrete difference is, the larger the height difference between the first height and the second height is.

6. The method for controlling impact of coating on semiconductor equipment according to claim 1, wherein: The step of injecting coating material into the processing pipeline includes the following sub-steps: Based on the obtained injection instruction, record the injection start time; positioning a plurality of said injection ports; Aligning the plurality of injection ends to acquire injection images in real time; Calculating area data of the injected coating paint from the injection image according to a preset coating template as injection data; When the injection data stops increasing, the injection stop time is recorded; Calculating an injection duration according to the injection start time and the injection stop time, and calculating an actual reference value according to the injection duration and a preset reference injection duration; adjusting the comprehensive temporary value in a positive correlation manner according to the actual reference value; The larger the actual reference value is, the larger the comprehensive temporary value is; The smaller the actual reference value is, the smaller the comprehensive temporary value is.

7. The method for controlling the impact of coating on a semiconductor device according to claim 6, wherein: The method further comprises the steps of: Calculating a single hole injection point of the injected coating material from the injection image; The single hole injection point is divided into a small hole area and a large hole area according to a preset area threshold; Calculate the small hole ratio of the single hole injection point to all the single hole injection points; adjusting the rotation speed of the semiconductor device inversely according to the aperture ratio; The larger the aperture ratio is, the smaller the rotation speed of the semiconductor device is; and the smaller the aperture ratio is, the larger the rotation speed of the semiconductor device is.

8. The method for controlling impact of coating on semiconductor equipment according to claim 7, wherein: The method further comprises the steps of: Calculate the macropore ratio of the single-hole injection point to all the single-hole injection points in the macropore area; The buffering amplitude of the impact of the semiconductor device is adjusted inversely according to the large pore ratio; the larger the large pore ratio, the smaller the buffering amplitude of the impact of the semiconductor device; the smaller the large pore ratio, the larger the buffering amplitude of the impact of the semiconductor device.

9. An impact control device for coating of semiconductor equipment, characterized in that: The method comprises a processor, wherein the steps of the impact control method for coating a semiconductor device according to any one of claims 1 to 8 are executed in the processor.

10. A storage medium, characterized in that: The storage medium stores a program, and when the program is executed by the processor, the steps of the impact control method for coating of semiconductor equipment according to any one of claims 1 to 8 are implemented.

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