Electrostatic protection structure, HEMT structure and manufacturing method of electrostatic protection structure

Abstract

The invention discloses an electrostatic protection structure, an HEMT (High Electron Mobility Transistor) structure and a manufacturing method of the electrostatic protection structure. Wherein the electrostatic protection structure is configured to be arranged on the HEMT main body and used for releasing static electricity of the HEMT main body, and comprises a fence layer, a gate electrode and a source electrode; the fence layer is configured to be convexly arranged on the first surface of the epitaxy of the HEMT main body, the fence layer comprises a plurality of fences, and the gate electrodes and the source electrodes are alternately arranged; wherein the gate electrodes are stacked on the fences respectively, the source electrodes are configured to be arranged on the first surface of the epitaxy, and a first interval is reserved between the adjacent gate electrode and source electrode; each gate electrode is configured to be electrically connected to a gate of the HEMT body, and each source electrode is configured to be electrically connected to a source of the HEMT body. The electrostatic protection structure can prevent the electrostatic protection structure from being broken down and damaged due to excessive concentration of current.

Description

Technical Field

[0001] The present application relates to the field of HEMT, and in particular to an electrostatic protection structure, a HEMT structure, and a method for manufacturing the electrostatic protection structure. Background Art

[0002] Existing E-mode chips (HEMT structures) often face challenges with ESD (electrostatic discharge) protection, often due to reverse voltage within the human body or mechanical components, causing leakage and breakdown, which can damage components. Consequently, existing technologies are insufficient in ESD protection, impacting E-mode chip performance and leading to issues such as the increased chip area required by the HEMT structure. Summary of the Invention

[0003] The purpose of this application is to provide an electrostatic protection structure, a HEMT structure, and a method for manufacturing the electrostatic protection structure, which can effectively release static electricity generated by the HEMT structure.

[0004] To achieve the above objectives, the present application provides an electrostatic protection structure configured to be disposed in a HEMT body and used to discharge static electricity from the HEMT body, comprising a fence layer, a gate electrode, and a source electrode. The fence layer is configured to protrude from a first surface of an epitaxial extension of the HEMT body and includes a plurality of fences. The gate electrodes and the source electrodes are alternately disposed. The gate electrodes are stacked on each of the fences, and the source electrodes are disposed on the first surface of the epitaxial extension, with a first gap between adjacent gate and source electrodes. Each gate electrode is configured to be electrically connected to a gate of the HEMT body, and each source electrode is configured to be electrically connected to a source of the HEMT body.

[0005] Optionally, the gate electrode includes a first gate electrode layer and a second gate electrode layer sequentially stacked on each of the fences; A side of the second gate electrode layer facing away from the first gate electrode layer protrudes to form a plurality of second gate protrusions.

[0006] Optionally, the material of the first gate electrode layer includes an alloy of Ni and Au or an alloy of Ti, Al, Ni and Au.

[0007] Optionally, the second gate electrode layer material includes Ti and Au.

[0008] Optionally, the source electrode includes a first source electrode layer and a second source electrode layer configured to be sequentially stacked on the epitaxial layer, and the first source electrode layer protrudes from a side facing away from the epitaxial layer to form a plurality of first source protrusions.

[0009] Optionally, the source electrode includes a first source electrode layer and a second source electrode layer sequentially stacked on the epitaxial layer, and the second source electrode layer protrudes from a side facing away from the first source electrode layer to form a plurality of second source protrusions.

[0010] Optionally, the material of the first source electrode layer includes Ti and Au.

[0011] Optionally, the second source electrode layer material includes Ti and Al.

[0012] Optionally, the material of the fence includes P-doped GaN.

[0013] Optionally, the gate electrode and / or the source electrode is approximately in the shape of a long strip.

[0014] Optionally, the first interval is provided with an isolator for isolating the gate electrode and the source electrode.

[0015] Optionally, the insulator includes a first isolation layer and a second isolation layer stacked sequentially on the epitaxial layer.

[0016] Optionally, the material of the first isolation layer and / or the second isolation layer includes SiO2.

[0017] Optionally, a third isolation layer is provided on a side of the gate electrode, the source electrode, and the insulator facing away from the epitaxial layer, and the third isolation layer is used to encapsulate the gate electrode and the source electrode.

[0018] Optionally, the material of the third isolation layer includes SiN x .

[0019] To achieve the above objectives, the present application provides a HEMT structure comprising a HEMT body and the above-described ESD protection structure, wherein the fence layer and the source electrode of the ESD protection structure are fixed to the epitaxial extension of the HEMT body, each gate electrode of the ESD protection structure is electrically connected to the gate of the HEMT body, and each source electrode of the ESD protection structure is configured to be electrically connected to the source of the HEMT body.

[0020] To achieve the above objectives, the present application provides a method for manufacturing an electrostatic protection structure, which is used to manufacture the above electrostatic protection structure, comprising: providing the epitaxial layer; Disposing the fence layer on one side of the epitaxial layer; Plating a first gate electrode layer on a side of the fence layer facing away from the epitaxial layer; Depositing the first isolation layer on the first surface of the epitaxial growth; Etching a first plating groove penetrating the first gate electrode layer and a second plating groove penetrating the epitaxial layer on a side of the first isolation layer facing away from the epitaxial layer; Plating a second gate electrode layer and a first source electrode layer in the first plating tank and the second plating tank respectively; Depositing the second isolation layer on a side of the second gate electrode layer facing away from the first gate electrode layer, and on a side of the first source electrode layer and the first isolation layer facing away from the epitaxial layer; Etching a third plating groove in the second isolation layer to penetrate the first source electrode layer; Plating a second source electrode layer in the third plating tank; The gate electrode includes the first gate electrode layer and the second gate electrode layer, and the source electrode includes the first source electrode layer and the second source electrode layer.

[0021] Optionally, after plating the second source electrode layer in the third plating tank, the method further includes: A third isolation layer is deposited on a side of the second source electrode layer facing away from the first source electrode layer, a side of the second gate electrode layer facing away from the first gate electrode layer, and a side of the second isolation layer facing away from the first isolation layer.

[0022] Because the multiple gate electrodes and multiple source electrodes of the present application are alternately arranged on the epitaxial layer, static electricity generated by the source and gate electrodes of the HEMT body can be dispersed to the vicinity of each PN junction of the ESD protection structure after entering the ESD protection structure. This prevents excessive current concentration from causing breakdown and damage to the ESD protection structure of the present application, further improving the voltage resistance of the ESD protection structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the HEMT structure of an embodiment of the present application.

[0024] Figure 2 This is a schematic structural diagram of the electrostatic protection structure of an embodiment of the present application.

[0025] Figure 3 for Figure 2 Cross-sectional view of part B along line aa.

[0026] Figure 4 for Figure 1 Enlarged view of part A in the middle.

[0027] Figure 5 This is a flow chart of a method for manufacturing an electrostatic protection structure according to an embodiment of the present application.

[0028] Figure 6 This is a schematic diagram of the principle of the HEMT body of an embodiment of the present application. DETAILED DESCRIPTION

[0029] In order to explain the technical content, structural features, achieved objectives and effects of this application in detail, the following is a detailed description in conjunction with the implementation methods and the accompanying drawings.

[0030] See also Figure 6 The HEMT body 200 of the present application includes a gate 201, a source 202, a drain 203, and an epitaxy 204. The source 202, gate 201, and drain 203 are disposed on the epitaxy 204. The epitaxy 204 includes a barrier layer 2041 (may include AlGaN / AlN) and a channel layer 2042. A two-dimensional electron gas (2DEG, a high electron mobility channel) 2043 is formed between the barrier layer 2041 and the channel layer 2042. The source 202 and drain 203 form ohmic contacts with the 2DEG 2043, allowing for electrical conduction between the source 202 and drain 203. The epitaxy 204, in conjunction with the gate 201, forms a PN junction near the gate 201. This attracts free electrons near the gate 201, disconnecting the 2DEG 2043 and rendering the source 202 and drain 203 non-conductive. Therefore, the PN junction acts as a current gate for the two-dimensional electron gas 2043. Only when the PN junction is open or broken down can conduction occur between the source 202 and the drain 203, allowing current to flow from the source 202 to the drain 203, or vice versa, through the two-dimensional electron gas 2043. This is a well-known technical approach by those skilled in the art and will not be further described.

[0031] See also Figures 1 to 3 The present application discloses an electrostatic protection structure 100, which is configured to be disposed on a HEMT body 200 and used to discharge static electricity from the HEMT body 200. The structure includes a fence layer 1, multiple gate electrodes 2, and multiple source electrodes 3. The fence layer 1 is configured to protrude from a first surface of an epitaxial extension 204 of the HEMT body 200. The fence layer 1 includes multiple fences 11. Gate electrodes 2 and source electrodes 3 are alternately disposed, wherein the gate electrodes 2 are stacked on each fence 11 of the fence layer 1. The source electrodes 3 are configured to be disposed on the first surface of the epitaxial extension 204. Spacers 4 are provided between adjacent gate electrodes 2 and source electrodes 3. Each gate electrode 2 is configured to be electrically connected to a gate 201 of the HEMT body 200, and each source electrode 3 is configured to be electrically connected to a source 202 of the HEMT body 200. Each gate electrode 2 is connected to the epitaxial extension 204 in the same manner as the gate 20, and each source electrode 3 is connected to the epitaxial extension 204 in the same manner as the source 20.

[0032] It should be noted that the connection between each gate electrode 2 and the gate 20 and the epitaxial extension 204 in the same manner essentially refers to the same connection method. That is, the epitaxial extension 204 forms a PN junction near the gate electrode 2 under the interaction with the gate electrode 2. The connection between each source electrode 3 and the source 20 and the epitaxial extension 204 in the same manner essentially refers to the same connection method. That is, the source electrode 3 forms an ohmic contact with the two-dimensional electron gas 2043, and the source electrode 3 and the drain 203 are electrically connected to each other through the two-dimensional electron gas 2043.

[0033] Similar to the conduction principle of the HEMT body 200, the gate electrode 2 and source electrode 3 of the ESD protection structure 100 of the present application are disposed on the epitaxy 204 of the HEMT body 200. The source electrode 3 and the drain 203 of the HEMT body 200 are in ohmic contact with the two-dimensional electron gas 2043 of the epitaxy 204. The source electrode 3 and the drain 203 of the HEMT body 200 are electrically connected to each other through the two-dimensional electron gas 2043 of the epitaxy 204. The PN junction formed near each gate electrode 2 of the ESD protection structure 100 serves as a current gate between the source electrode 3 and the drain 203 of the HEMT body 200. Since the source electrode 3 and gate electrode 2 of the ESD protection structure 100 are relatively close to each other, their resistance is lower than that of the HEMT body 200. Therefore, when static electricity enters the source 202 or gate 201 of the HEMT body 200, it preferentially flows into the ESD protection structure 100 rather than into the interior of the HEMT body 200.

[0034] 1. When static electricity enters the HEMT body 200 from the source 202, if the static electricity current is small, the current will be blocked at the PN junctions of the ESD protection structure 100. Some of the static electricity will recombine near the PN junctions and dissipate as heat energy, while the remaining static electricity will be dispersed into the channel layer 2042 below the two-dimensional electron gas 2043. If the static electricity current is too large, the PN junction of the ESD protection structure will be broken down, causing the epitaxial two-dimensional electron gas 2043 to conduct, and the static electricity will be discharged from the ESD protection structure 100 through the two-dimensional electron gas 2043.

[0035] 2. When static electricity enters the gate 201 of the HEMT body 200, it is also blocked by the PN junctions of the ESD protection structure 100. If the static electricity is insufficient to break down or turn on the PN junction, the static electricity will accumulate near the PN junction. If the static electricity at the PN junction is too large, if the static electricity is in the positive direction, the PN junction will open, and the two-dimensional electron gas 2043 will be turned on. At this time, the static electricity will flow through the two-dimensional electron gas 2043 to the source 202 or drain 203 of the HEMT body 200, thereby discharging the static electricity from the source 202 or drain 203 of the HEMT body 200. If the static electricity is in the negative direction, the excessive electric field strength of the static electricity will break down the PN junction and the insulator 4 of the ESD protection structure 100, and the static electricity will flow from the gate electrode 2 of the ESD protection structure 100 through the insulator 4 to the source electrode 3, thereby discharging the static electricity from the ESD protection structure 100.

[0036] 3. When static electricity enters the drain 203 of the HEMT body 200, the drain 203 of the HEMT body 200 is far away from the gate 201 of the HEMT body 200 and the gate electrode 2 of the ESD protection structure 100, resulting in a high resistance and a high withstand voltage against static electricity. In this case, there is no need to worry about PN junction breakdown. The static electricity is trapped at each PN junction, some of which recombine near the PN junction and dissipate as heat, while the remaining portion is dispersed into the channel layer 2042 below the two-dimensional electron gas 2043.

[0037] Since the multiple gate electrodes 2 and the multiple source electrodes 3 of the present application are alternately arranged on the epitaxial extension 204, after the static electricity generated by the source 202 and the gate 201 of the HEMT body 200 enters the ESD protection structure 100, the static electricity can be dispersed to the vicinity of each PN junction of the ESD protection structure 100, thereby preventing the ESD protection structure 100 from being damaged by breakdown due to excessive current concentration, thereby further improving the voltage resistance of the ESD protection structure 100.

[0038] See also Figure 2 and Figure 3 In some embodiments, the gate electrode 2 includes a first gate electrode layer 21 and a second gate electrode layer 22 sequentially stacked on each fence 11. The second gate electrode layer 22 protrudes from the side facing away from the first gate electrode layer 21 to form a plurality of second gate protrusions 221, which can make the electric field distribution more uniform, reduce the electric field peak at locations such as the gate edge, and alleviate electric field concentration.

[0039] Specifically, the first gate electrode layer 21 is a field plate.

[0040] Alternatively, the material of the first gate electrode layer 21 includes an alloy of Ni and Au or an alloy of Ti, Al, Ni and Au.

[0041] Specifically, the second gate electrode layer 22 is a field plate.

[0042] Optionally, the material of the second gate electrode layer 22 includes Ti and Au.

[0043] The first gate electrode layer 21 (nickel base layer) can be a flat layer with low surface roughness and low friction, which can improve the wear resistance of gold-plated connectors or contacts, making the surface of the gate electrode 2 smoother and flatter, which is beneficial for subsequent processing and stable device performance. The second gate electrode layer 22 (titanium layer) has excellent conductivity and can effectively transmit current, ensuring the gate electrode 2's control over the channel current, reducing signal transmission delay, and improving the device's switching speed and operating frequency.

[0044] See also Figure 2 and Figure 3 In some embodiments, the source electrode 3 includes a first source electrode layer 31 and a second source electrode layer 32 configured to be sequentially stacked on the epitaxial layer 204 .

[0045] Specifically, the first source electrode layer 31 protrudes from a side facing away from the extension 204 to form a plurality of first source protrusions 311 .

[0046] Specifically, a side of the second source electrode layer 32 facing away from the first source electrode layer 31 protrudes to form a plurality of second source protrusions 321 .

[0047] The first source protrusion 311 and the second source protrusion 321 can make the electric field distribution more uniform, reduce the electric field peak at the gate edge and other positions, and reduce the electric field concentration phenomenon.

[0048] Optionally, the material of the first source electrode layer 31 includes Ti and Au.

[0049] Optionally, the material of the second source electrode layer 32 includes Ti and Al.

[0050] The titanium-gold material of the first source electrode layer 31 needs to be annealed and doped into the 2DEG high electron mobility layer below the epitaxial layer, so using Ti and Au will reduce the contact resistance. Using Ti and Al for the second source electrode layer 32 can reduce production costs without affecting the electrostatic discharge of the ESD protection structure 100.

[0051] In some embodiments, the material of the fence 11 includes P-doped GaN.

[0052] See also Figure 2In some embodiments, the gate electrode 2 and / or the source electrode 3 are generally strip-shaped. The ESD protection structure 100 generally has a symmetrical multi-finger structure. The gate electrode 2 and source electrode 3 can be considered "fingers" (finger-like structures), and the gate 201 and source 202 of the HEMT body 200 can be considered a "palm." The "fingers" of the two "hands" intersect to form a multi-finger interdigitated structure, which is the aforementioned symmetrical multi-finger structure. Based on the principle of current distribution, in a symmetrical multi-finger structure, each finger can be considered an independent current channel. Due to the presence of the extension 204 and the design of the symmetrical multi-finger structure, the electric field distribution on each finger is relatively uniform, and therefore the current on each finger is also relatively uniform. This prevents current concentration on one or a few fingers, allowing the ESD current to be evenly distributed across the fingers and effectively discharged through the extension 204 and other channels.

[0053] See also Figure 2 and Figure 3 In some embodiments, the isolator 4 includes a first isolation layer 41 and a second isolation layer 42 sequentially stacked on the epitaxial layer 204 , which can prevent the gate electrode 2 and the source electrode 3 from contacting and short-circuiting.

[0054] Optionally, the first isolation layer 41 is made of SiO 2 .

[0055] Optionally, the second isolation layer 42 is made of SiO 2 .

[0056] Among them, SiO 2 has good insulation properties and can be used to isolate different conductive components in the electrostatic protection structure 100 , just like forming an insulating medium between metal interconnection layers to prevent short circuits.

[0057] Specifically, a third isolation layer 5 is provided on the side of the gate electrode 2 , the source electrode 3 and the isolator 4 facing away from the epitaxy 204 . The third isolation layer 5 is used to encapsulate the gate electrode 2 and the source electrode 3 .

[0058] Optionally, the material of the third isolation layer 5 is SiN x Among them, SiN x It is an excellent passivation material that can prevent water vapor, ions, etc. from entering the electrostatic protection structure 100. Compared with SiN x It has better moisture resistance and anti-ion contamination ability, so SiN x The long-term reliability of the electrostatic protection structure 100 can be improved.

[0059] Experimental verification has shown that installing the electrostatic protection structure 100 of this application on a HEMT structure 200 improves the ESD protection capabilities of the E-mode chip (HEMT body 200) of the HEMT structure 200, while maintaining a significant impact on the on-resistance and reverse breakdown voltage of the E-mode chip, without increasing the chip's footprint. This simple and easy-to-manufacture structure can be widely used in ESD protection for various E-mode chips, effectively improving their reliability and stability.

[0060] See also Figures 1 to 4 The present application also discloses a HEMT structure, including a HEMT body 200 and the above-mentioned ESD protection structure 100. The fence layer 1 and the source electrode 3 of the ESD protection structure 100 are fixed on the epitaxial extension 204 of the HEMT body 200. The gate electrodes 2 of the ESD protection structure 100 are electrically connected to the gate 201 of the HEMT body 200. The source electrodes 3 of the ESD protection structure 100 are configured to be electrically connected to the source 202 of the HEMT body 200.

[0061] Please combine Figure 1 and Figure 4 Specifically, the electrostatic protection structure 100 may include a plurality of electrostatic protection structures 100. The plurality of electrostatic protection structures 100 may have different arrangements.

[0062] See also Figures 1 to 5 The present application also discloses a method for manufacturing an electrostatic protection structure 100, which is used to manufacture the electrostatic protection structure 100, comprising: S1, providing epitaxy 204.

[0063] S2 , providing a barrier layer 1 on the epitaxial layer 204 .

[0064] In some embodiments, the material of the barrier layer 1 includes P-doped GaN, and the barrier 11 of the barrier layer 1 can be formed by etching.

[0065] S3 , depositing a first gate electrode layer 21 on a side of the fence layer 1 facing away from the epitaxial layer 204 .

[0066] In some embodiments, the material of the first gate electrode layer 21 includes an alloy of Ni and Au or an alloy of Ti, Al, Ni, and Au.

[0067] S4 , forming a first isolation layer 41 by deposition on the first surface of the epitaxial layer 204 .

[0068] In some embodiments, the material of the first isolation layer 41 is SiO 2 .

[0069] S5 , etching a first plating groove 61 penetrating the first gate electrode layer 21 and a second plating groove 62 penetrating the epitaxial layer 204 on a side of the first isolation layer 41 facing away from the epitaxial layer 204 .

[0070] In some embodiments, the material of the first isolation layer 41 is SiO 2 .

[0071] S6 , the second gate electrode layer 22 and the first source electrode layer 31 are plated in the first plating tank 61 and the second plating tank 62 , respectively.

[0072] In some embodiments, materials of the second gate electrode layer 22 and the first source electrode layer 31 include Ti and Au.

[0073] S7 , depositing a second isolation layer 42 on a surface of the second gate electrode layer 22 facing away from the first gate electrode layer 21 , and on a surface of the first source electrode layer 31 and the first isolation layer 41 facing away from the epitaxial layer 204 .

[0074] In some embodiments, the material of the second isolation layer 42 is SiO 2 .

[0075] S8 , etching a third plating groove 63 on the second isolation layer 42 to penetrate the first source electrode layer 31 .

[0076] In some embodiments, the material of the second isolation layer 42 is SiO 2 .

[0077] S9 , forming the second source electrode layer 32 by plating in the third plating tank 63 .

[0078] In some embodiments, the material of the second source electrode layer 32 includes Ti and Al.

[0079] S10 , a third isolation layer 5 is deposited on a side of the second source electrode layer 32 facing away from the first source electrode layer 31 , a side of the second gate electrode layer 22 facing away from the first gate electrode layer 21 , and a side of the second isolation layer 42 facing away from the first isolation layer 41 .

[0080] In some embodiments, the material of the third isolation layer 5 is SiN x .

[0081] The gate electrode 2 includes a first gate electrode layer 21 and a second gate electrode layer 22 , the source electrode 3 includes a first source electrode layer 31 and a second source electrode layer 32 , and the insulator 4 includes a first isolation layer 41 and a second isolation layer 42 .

[0082] The above disclosure is only the preferred embodiment of the present application, which certainly cannot be used to limit the scope of rights of the present application. Therefore, equivalent changes made according to the scope of the patent application of the present application are still within the scope covered by the present application.

Claims

1. An electrostatic protection structure, configured to be disposed on a HEMT body and used to release static electricity from the HEMT body, characterized in that: The invention comprises a fence layer, a plurality of gate electrodes, and a plurality of source electrodes; the fence layer is configured to protrude from the first surface of the epitaxial extension of the HEMT body, and the fence layer includes a plurality of fences; the gate electrodes and the source electrodes are alternately arranged, wherein the gate electrodes are respectively stacked on each of the fences, and the source electrodes are configured to be arranged on the first surface of the epitaxial extension, and an insulator is provided between adjacent gate electrodes and source electrodes; each gate electrode is configured to be electrically connected to the gate of the HEMT body, and each source electrode is configured to be electrically connected to the source of the HEMT body, and each gate electrode is connected to the epitaxial extension in the same manner as the gate, and each source electrode is connected to the epitaxial extension in the same manner as the source.

2. The electrostatic protection structure according to claim 1, wherein: The gate electrode comprises a first gate electrode layer and a second gate electrode layer sequentially stacked on each of the fences; A side of the second gate electrode layer facing away from the first gate electrode layer protrudes to form a plurality of second gate protrusions.

3. The electrostatic protection structure according to claim 2, wherein: The material of the first gate electrode layer includes an alloy of Ni and Au or an alloy of Ti, Al, Ni and Au; and / or, The material of the second gate electrode layer includes Ti and Au.

4. The electrostatic protection structure according to claim 1, wherein: The source electrode includes a first source electrode layer and a second source electrode layer configured to be sequentially stacked on the epitaxial layer; The first source electrode layer protrudes from a side facing away from the epitaxial layer to form a plurality of first source protrusions; and / or, A side of the second source electrode layer facing away from the first source electrode layer protrudes to form a plurality of second source protrusions.

5. The electrostatic protection structure according to claim 2, wherein: The material of the first source electrode layer includes Ti and Au; and / or, The second source electrode layer material includes Ti and Al.

6. The electrostatic protection structure according to claim 1, wherein: The material of the fence includes P-doped GaN.

7. The electrostatic protection structure according to claim 1, wherein: The gate electrode and / or the source electrode are substantially in a strip shape.

8. The electrostatic protection structure according to claim 1, wherein: A third isolation layer is provided on the side of the gate electrode, the source electrode and the isolator facing away from the epitaxy, and the third isolation layer is used to encapsulate the gate electrode and the source electrode.

9. A HEMT structure, characterized in that: The device comprises a HEMT body and the ESD protection structure according to any one of claims 1 to 8, wherein the fence layer and the source electrode of the ESD protection structure are fixed on the epitaxial extension of the HEMT body, each gate electrode of the ESD protection structure is electrically connected to the gate of the HEMT body, and each source electrode of the ESD protection structure is electrically connected to the source of the HEMT body.

10. A method for manufacturing an electrostatic protection structure, for manufacturing the electrostatic protection structure according to claim 8, characterized in that: include: providing the epitaxial layer; Disposing the fence layer on one side of the epitaxial layer; Plating a first gate electrode layer on a side of the fence layer facing away from the epitaxial layer; Depositing the first isolation layer on the first surface of the epitaxial growth; Etching a first plating groove penetrating the first gate electrode layer and a second plating groove penetrating the epitaxial layer on a side of the first isolation layer facing away from the epitaxial layer; Plating a second gate electrode layer and a first source electrode layer in the first plating tank and the second plating tank respectively; Depositing the second isolation layer on a side of the second gate electrode layer facing away from the first gate electrode layer, and on a side of the first source electrode layer and the first isolation layer facing away from the epitaxial layer; Etching a third plating groove in the second isolation layer to penetrate the first source electrode layer; Plating a second source electrode layer in the third plating tank; A third isolation layer is deposited on a side of the second source electrode layer facing away from the first source electrode layer, a side of the second gate electrode layer facing away from the first gate electrode layer, and a side of the second isolation layer facing away from the first isolation layer; The gate electrode includes the first gate electrode layer and the second gate electrode layer, the source electrode includes the first source electrode layer and the second source electrode layer, and the insulator includes the first isolation layer and the second isolation layer.

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