A ridge waveguide, high-performance cw laser epitaxial structure and a preparation method thereof

Abstract

The application provides a ridge waveguide, a high-performance CW laser epitaxial structure and a preparation method thereof, and belongs to the field of semiconductors. m The ridge width range W of the passive waveguide 102 is controlled to be 5-10 μm p The ridge width range W of the passive waveguide 102 is controlled to be 1.5-5 μm 4 A tapered coupling area with a gap of 0.8 μm is constructed, single-mode output (side mode suppression ratio > 45 dB) is realized under 500 mA injection current through mode selection resonance (Q value > 1 x 10 The power saturation threshold is improved to 520 mA, which is increased by 44% compared with a traditional single-ridge waveguide (360 mA). The ridge waveguide of the application also breaks through the mode jump defect caused by insufficient gap control precision (±0.1 μm) of the existing double-ridge waveguide.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, specifically to a ridge waveguide, a high-performance CW laser epitaxial structure, and a method for fabricating the same. Background Technology

[0002] As 400G / 800G optical modules evolve towards CPO packaging, the electroabsorption modulators of traditional EML lasers face a bandwidth-chirp tradeoff. CW laser architectures based on silicon photonic modulators offer advantages such as low transmission loss (<0.5dB / mm) and high modulation linearity (SFDR > 110dB·Hz). 2 / 3 This architecture has become the mainstream solution for data center interconnection. However, this architecture has the following technical limitations: when the injected current is >300mA (corresponding to an output power ≥200mW), the traditional transverse single-ridge waveguide, due to the uneven longitudinal distribution of charge carriers (measured fluctuation >35%), causes the spatial hole burning effect, which brings the power saturation threshold down to 360mA (a decrease of 40%). At the same time, the surge in higher-order transverse modes causes bimodal distortion of the near-field spot (mode rejection ratio <20dB). Summary of the Invention

[0003] This invention provides a ridge waveguide, a high-performance CW laser epitaxial structure, and a method for fabricating the same. The ridge waveguide of this invention can improve the side-mode suppression ratio and power saturation threshold of the CW laser epitaxial structure.

[0004] This invention provides a ridge waveguide, comprising a main waveguide 101 and a passive waveguide 102;

[0005] The main waveguide 101 includes a first P-InP buffer layer 010-1, a first P-InGaAsP grating layer 011-1, a first P-InP grating buried layer 012-1, a first P-InP connection layer 013-1, a first P-InGaAsP barrier gradient layer 014-1, a first P-InGaAsP barrier gradient layer 015-1, and a first P-InGaAs ohmic contact layer 016-1, which are stacked sequentially.

[0006] The passive waveguide 102 includes a second P-InP buffer layer 010-2, a second P-InGaAsP grating layer 011-2, a second P-InP grating buried layer 012-2, a second P-InP connection layer 013-2, a second P-InGaAsP barrier gradient layer 014-2, a second P-InGaAsP barrier gradient layer 015-2, and a second P-InGaAs ohmic contact layer 016-2, which are stacked sequentially.

[0007] The ridge width Wm of the main waveguide 101 is 5 to 10 μm, and the ridge width Wp of the passive waveguide 102 is 1.5 to 5 μm; the distance S between the main waveguide 101 and the passive waveguide 102 is 2 to 6 μm.

[0008] Preferably, the thickness of the first P-InP buffer layer 010-1 and the second P-InP buffer layer 010-2 is independently 80±2.4nm;

[0009] The thickness of the first P-InGaAsP grating layer 011-1 and the second P-InGaAsP grating layer 011-2 is independently 30±0.9nm, and the period of the grating pattern in the first P-InGaAsP grating layer 011-1 and the second P-InGaAsP grating layer 011-2 is 202nm.

[0010] The thickness of the first P-InP grating buried layer 012-1 and the second P-InP grating buried layer 012-2 is independently 300±9 nm, and the Zn doping concentration is independently 1~2×10 18 cm -3 ;

[0011] The thickness of the second P-InP interconnect layer 013-1 and the second P-InP interconnect layer 013-2 is 300±9nm;

[0012] The thicknesses of the first P-InGaAsP barrier gradient layer 014-1, the second P-InGaAsP barrier gradient layer 014-2, the first P-InGaAsP barrier gradient layer 015-1, and the second P-InGaAsP barrier gradient layer 015-2 are independently 50 ± 1.5 nm. The Zn doping concentration varies from 1 × 10⁻⁶ nm along the direction of either the first P-InGaAsP barrier gradient layer 014-1 or the second P-InGaAsP barrier gradient layer 015-1, or along the direction of the first P-InGaAsP barrier gradient layer 014-2 or the second P-InGaAsP barrier gradient layer 015-2. 18 cm -3 Increment to 5×10 19 cm -3 ;

[0013] The thickness of the first P-InGaAs ohmic contact layer 016-1 and the second P-InGaAs ohmic contact layer 016-2 is independently 200±6 nm, and the Zn doping concentration is independently 3~5×10⁻⁶. 19 cm -3 .

[0014] The present invention also provides a high-performance CW laser epitaxial structure, comprising, in sequence, a substrate metal layer, an N-type InP substrate 001, an N-InP buffer layer 002, an N-InGaAsP extended waveguide layer 003, an N-InP buffer layer 004, an N-InGaAsP lower confinement layer 005, an InGaAsP lower waveguide layer 006, an InGaAsP / InGaAsP quantum well active region 007, an InGaAsP upper waveguide layer 008, a P-InGaAsP upper confinement layer 009, and a ridge waveguide; wherein the ridge waveguide comprises the ridge waveguide described in claim 1 or 2.

[0015] The first P-InP buffer layer 010-1 is in contact with the P-InGaAsP upper confinement layer 009;

[0016] The second P-InP buffer layer 010-2 is in contact with the P-InGaAsP upper confinement layer 009;

[0017] Also includes:

[0018] An insulating layer and a p-electrode are stacked in contact with the first P-InGaAs ohmic contact layer 016-1 and the second P-InGaAs ohmic contact layer 016-2. The insulating layer and the p-electrode surround the main waveguide 101 and the passive waveguide 102, and cover the structure between the main waveguide 101 and the passive waveguide 102. The p-electrode above the main waveguide 101 is connected to the P-InGaAs ohmic contact layer 016-1 through a connecting metal layer.

[0019] The insulating layer above the main waveguide 101 has a through hole, and the connecting metal layer is embedded in the through hole.

[0020] Preferably, the composition of the N-InGaAsP extended waveguide layer 003 is In. 1-x Ga x As y P 1-y ;

[0021] In the direction from N-InP buffer layer 002 to N-InP buffer layer 004, x increases from 0.171 to 0.208, and y increases from 0.374 to 0.453.

[0022] Preferably, the thickness L of the N-InP buffer layer 004 is 1 to 2 μm.

[0023] Preferably, the p-electrode comprises a stacked Ti layer, a Pt layer, and an Au layer; the p-electrode is embedded in the insulating layer; the bottom of the Ti layer is in contact with the insulating layer;

[0024] In the vertical direction, the p electrode is circular in shape, and the diameter of the p electrode is 65±1.95μm.

[0025] Preferably, the thickness of the N-InP buffer layer 002 is 500 nm;

[0026] The thickness of the N-InGaAsP extended waveguide layer 003 is 15±0.45 nm, the emission wavelength is 960~860 nm, and the Si doping concentration is 1~2×10⁻⁶. 18 cm -3 ;

[0027] The thickness of the N-InP buffer layer 004 is 1600±48 nm, and the doping concentration is 2×10⁻⁶. 18 cm -3 ;

[0028] The thickness of the N-InGaAsP lower confinement layer 005 is 100±3nm, the emission wavelength is 1000±10nm, and the Si doping concentration is 1~2×10⁻⁶. 18 cm -3 ;

[0029] The thickness of the InGaAsP lower waveguide layer 006 is 50±1.5nm, and the emission wavelength is 1057±10nm;

[0030] The InGaAsP / InGaAsP quantum well active region 007 includes stacked quantum barrier layers and quantum well layers; the bottom and top of the InGaAsP / InGaAsP quantum well active region 007 are both quantum barrier layers; the number of quantum barrier layers is 6; the thickness of each quantum barrier layer is independently 10±0.3nm, and the emission wavelength is independently 1120±10nm; the thickness of each quantum well layer is independently 5±0.15nm, and the emission wavelength is independently 1120±10nm.

[0031] Preferably, the thickness of the waveguide layer 008 on the InGaAsP is 25±0.75nm, and the emission wavelength is 1057±10nm;

[0032] The thickness of the 009 confinement layer on the P-InGaAsP is 75±2.25 nm, the emission wavelength is 1000±10 nm, and the Zn doping concentration is 1~2×10⁻⁶. 18 cm -3 .

[0033] This invention also provides a method for fabricating the high-performance CW laser epitaxial structure described in the above technical solution, comprising the following steps:

[0034] On an N-type InP substrate, the following layers are sequentially grown: N-InP buffer layer 002, N-InGaAsP extended waveguide layer 003, N-InP buffer layer 004, N-InGaAsP lower confinement layer 005, InGaAsP lower waveguide layer 006, InGaAsP / InGaAsP quantum well active region 007, InGaAsP upper waveguide layer 008, P-InGaAsP upper confinement layer 009, P-InP buffer layer, and P-InGaAsP grating original layer.

[0035] The original P-InGaAsP grating layer is obtained by photolithography.

[0036] A P-InP grating buried layer, a P-InP interconnect layer, a first P-InGaAsP barrier gradient layer, a second P-InGaAsP barrier gradient layer, and a P-InGaAs ohmic contact layer are sequentially deposited on the P-InGaAsP grating layer.

[0037] After coating the surface of the P-InGaAs ohmic contact layer with photoresist, exposure, development and etching are performed using a mask, and then the remaining photoresist is removed to form the main waveguide 101 and the passive waveguide 102.

[0038] The raw material for the insulating layer is deposited on the surfaces of the P-InGaAs ohmic contact layer 016-1, P-InGaAs ohmic contact layer 016-2 and P-InGaAs P confinement layer 009 to form the insulating layer.

[0039] After coating the insulating layer with photoresist, exposure, development and etching are performed using a mask. Then, the remaining photoresist is removed to form a via between the p electrode above the main waveguide 101 and the P-InGaAs ohmic contact layer 016-1 on the insulating layer.

[0040] Metal is deposited inside the through-hole to form a connecting metal layer;

[0041] After coating the surface of the insulating layer and the metal surface inside the through-hole of the connecting metal layer with photoresist, the surface is developed and etched using a mask to form a p-electrode pattern on the surface of the insulating layer and the surface of the connecting metal layer. After removing the excess metal formed during the formation of the connecting metal layer, the raw material of the p-electrode is deposited on the surface of the pattern to form the p-electrode.

[0042] After removing the remaining photoresist, the N-type InP substrate material is thinned to form an N-type InP substrate 001, and then the substrate metal layer material is deposited to form a substrate metal layer, thus obtaining the high-performance CW laser epitaxial structure.

[0043] The present invention also provides a high-performance CW laser, comprising the high-performance CW laser epitaxial structure described in the above technical solution or the high-performance CW laser epitaxial structure prepared by the preparation method described in the above technical solution.

[0044] This invention defines the ridge width range W of the main waveguide 101. m The ridge width W of the passive waveguide 102 is controlled within the range of 5–10 μm. p Controlled within 1.5–5 μm, in resonance mode (Q value > 1 × 10⁻⁶). 4 It achieves single-mode output (side-mode rejection ratio > 45dB) with an injection current of 500mA, and the power saturation threshold is increased to 520mA, which is 44% higher than that of the traditional single-ridge waveguide (360mA).

[0045] Existing double-ridge waveguides achieve fundamental mode operation based on parity-even time symmetry. However, this requires electrodes on each ridge, followed by current application to form a gain waveguide and a loss waveguide. To ensure electrical isolation, the spacing between the two waveguides must be controlled simultaneously to maximize the cancellation of higher-order modes in the gain waveguide by the loss waveguide, thus achieving fundamental mode operation. Spacing control issues often negatively impact the final result. This invention, based on the principle of coupled resonant cavities, only requires current injection into the main waveguide, eliminating the need for electrical isolation. This overcomes the mode-hopping defects caused by insufficient spacing control precision (±0.1μm) in existing double-ridge waveguides, resulting in a more stable fundamental mode operation.

[0046] Furthermore, the composition of the N-InGaAsP extended waveguide layer 003 in this invention is In. 1-x Ga x As y P 1-y Along the direction from N-InP buffer layer 002 to N-InP buffer layer 004, x increases from 0171 to 0208, and y increases from 0.374 to 0.453, forming a high refractive difference waveguide with Δn = 0.032 (traditional Δn = 0.018). The refractive index gradient pulls the light field towards the n-region (offset of 1.8 μm), thereby compressing θ to 28° ± 2°. Combined with the lateral constraint of the double-ridge waveguide, the hole scattering loss in the p-region is reduced, increasing the coupling efficiency to 75% (traditional 58%). This significantly reduces the insertion loss of the optical interconnect system by 3.2 dB and is superior to existing herringbone-shaped lateral microstructure schemes (coupling efficiency only 65%). The synergistic optical field manipulation technology of the ridge waveguide and the N-InGaAsP extended waveguide layer 003 achieves dual optimization of beam divergence angle compression and coupling efficiency improvement, ultimately resulting in higher beam quality.

[0047] This invention's 5-10 μm ridge width design in the main waveguide significantly increases the gain region area, achieving optimized carrier concentration distribution under a high injection current of 500 mA. Combined with the synergistic heat dissipation of the p-electrode formed by stacked Ti, Pt, and Au layers, the thermal resistance is reduced to 18.5 K / W (conventional > 30 K / W), increasing the high-temperature (85°C) saturation power to 320 mW (a 26% improvement over the conventional 254 mW), with a wavelength drift Δλ < 0.6 nm (conventional > 1.2 nm, meeting the 0.8 nm tolerance requirement of silicon waveguides). This overcomes the power-temperature repulsion bottleneck caused by thermally induced mode transitions in traditional wide-ridge waveguides. Compared to existing quasi-PT symmetrical double-ridge waveguide thermal management schemes (high-temperature power attenuation rate > 20%), this invention achieves a 40% improvement in high-temperature power stability through optimized meshed heat dissipation paths.

[0048] The synergistic design of the metal mesh heat dissipation of the P-electrode and the optical field modulation of the N-InGaAsP extended waveguide layer 003 enables high power (320mW) and high beam quality (M). 2 =1.15) is achieved simultaneously at 85℃, reducing the power attenuation rate by 40% compared to existing solutions, and meeting the stringent requirements of CPO packaging for wavelength stability (Δλ / nm / ℃<0.008) and optical module coupling tolerance (±0.1μm) under high-temperature conditions of lasers. Attached Figure Description

[0049] Figure 1 Schematic diagrams of the epitaxial structures in Embodiments 1-3 of this invention;

[0050] Figure 2 This is a schematic diagram of the structure formed after the first extension in the embodiment;

[0051] Figure 3 This is a schematic diagram of the structure formed after the second extension in the embodiment;

[0052] Figure 4 The results show the high-temperature saturation current and saturation power of the epitaxial structures obtained in Comparative Example 1 and Example 1;

[0053] Figure 5 The optical field of the epitaxial structure (ordinary structure) in Comparative Example 1;

[0054] Figure 6 The light field of the epitaxial structure (optimized structure 1) in Example 1;

[0055] Figure 7 The far-field divergence angle (y direction) of the epitaxial structure (ordinary structure) in Comparative Example 1 and the epitaxial structure (optimized structure 1) in Example 1 is shown.

[0056] Figure 8 The light field of the epitaxial structure (optimized structure 2) in Example 2;

[0057] Figure 9 The far-field divergence angle (y direction) of the epitaxial structure (ordinary structure) in Comparative Example 1 and the epitaxial structure (optimized structure 2) in Example 2 is shown.

[0058] Figure 10 The light field of the epitaxial structure (optimized structure 3) in Example 3;

[0059] Figure 11 The far-field divergence angle (y direction) of the epitaxial structure (ordinary structure) in Comparative Example 1 and the epitaxial structure (optimized structure 3) in Example 3 is shown.

[0060] Figure 12 This is a schematic diagram of the extensional structure in Comparative Example 1. Detailed Implementation

[0061] This invention provides a ridge waveguide, comprising a main waveguide 101 and a passive waveguide 102;

[0062] The main waveguide 101 includes a first P-InP buffer layer 010-1, a first P-InGaAsP grating layer 011-1, a first P-InP grating buried layer 012-1, a first P-InP connection layer 013-1, a first P-InGaAsP barrier gradient layer 014-1, a first P-InGaAsP barrier gradient layer 015-1, and a first P-InGaAs ohmic contact layer 016-1, which are stacked sequentially.

[0063] The passive waveguide 102 includes a second P-InP buffer layer 010-2, a second P-InGaAsP grating layer 011-2, a second P-InP grating buried layer 012-2, a second P-InP connection layer 013-2, a second P-InGaAsP barrier gradient layer 014-2, a second P-InGaAsP barrier gradient layer 015-2, and a second P-InGaAs ohmic contact layer 016-2, which are stacked sequentially.

[0064] The ridge width Wm of the main waveguide 101 is 5 to 10 μm, and the ridge width Wp of the passive waveguide 102 is 1.5 to 5 μm; the distance S between the main waveguide 101 and the passive waveguide 102 is 2 to 6 μm.

[0065] In this invention, the ridge width range W of the main waveguide 101 is... m The ridge width W of the main waveguide 101 is 5–10 μm. In a specific embodiment of the present invention, the ridge width W is within the range of 5–10 μm. m It can be 5μm, 6μm, 7μm, 8μm, 9μm or 10μm;

[0066] The main waveguide 101 provided by the present invention includes a first P-InP buffer layer 010-1, wherein the thickness of the first P-InP buffer layer 010-1 is preferably 80±2.4nm;

[0067] The main waveguide 101 provided by the present invention includes a first P-InGaAsP grating layer 011-1 on the surface of a first P-InP buffer layer 010-1; the thickness of the first P-InGaAsP grating layer 011-1 is preferably 30±0.9nm, and the period of the grating pattern in the first P-InGaAsP grating layer 011-1 is preferably 202nm.

[0068] The main waveguide 101 provided by the present invention includes a first P-InP grating buried layer 012-1 on the surface of the first P-InGaAsP grating layer 011-1; the thickness of the first P-InP grating buried layer 012-1 is preferably 300±9nm, and the Zn doping concentration is preferably 1~2×10 18 cm -3 ;

[0069] The main waveguide 101 provided by the present invention includes a first P-InP bonding layer 013-1 on the surface of the first P-InP grating buried layer 012-1; the thickness of the first P-InP bonding layer 013-1 is preferably 300±9nm.

[0070] The main waveguide 101 provided by the present invention includes a first P-InGaAsP barrier gradient layer 014-1 on the surface of the first P-InP connection layer 013-1; the thickness of the first P-InGaAsP barrier gradient layer 014-1 is preferably 50±1.5nm.

[0071] The main waveguide 101 provided by the present invention includes a first P-InGaAsP barrier gradient layer 015-1 on the surface of the first P-InGaAsP barrier gradient layer 014-1; the thickness of the first P-InGaAsP barrier gradient layer 015-1 is preferably 50±1.5nm.

[0072] In this invention, the Zn doping concentration is preferably from 1 × 10⁻⁶ in the direction from the first P-InGaAsP barrier gradient layer 014-1 to the second P-InGaAsP barrier gradient layer 015-1. 18 cm -3 Increment to 5×10 19 cm -3 ;

[0073] The main waveguide 101 provided by the present invention includes a first P-InGaAs ohmic contact layer 016-1 on the surface of a first P-InGaAs P-barrier gradient layer 015-1; the thickness of the first P-InGaAs ohmic contact layer 016-1 is preferably 200 nm, and the Zn doping concentration is preferably 3 to 5 × 10⁻⁶. 19 cm -3 .

[0074] In this invention, the ridge width range W of the passive waveguide 102 is... p The ridge width W of the passive waveguide 102 is 1.5–5 μm. In a specific embodiment of the present invention, the ridge width W is within the range of 1.5–5 μm. m It can be 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm or 5μm.

[0075] In this invention, the parameters of the second P-InP buffer layer 010-2, the second P-InGaAsP grating layer 011-2, the second P-InP grating buried layer 012-2, the second P-InP connection layer 013-2, the first P-InGaAsP barrier gradient layer 014-2, the second P-InGaAsP barrier gradient layer 015-2, and the second P-InGaAs ohmic contact layer 016-2 in the passive waveguide 102 are as follows: Preferably, the parameters of the first P-InP buffer layer 010-1, the first P-InGaAsP grating layer 011-1, the first P-InP grating buried layer 012-1, the first P-InP connection layer 013-1, the first P-InGaAsP barrier gradient layer 014-1, the second P-InGaAsP barrier gradient layer 015-1, and the first P-InGaAs ohmic contact layer 016-1 are consistent independently, and will not be described in detail here;

[0076] In this invention, the distance S between the main waveguide 101 and the passive waveguide 102 is 2 to 6 μm. In a specific embodiment of this invention, the distance S between the main waveguide 101 and the passive waveguide 102 can be 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, 5 μm, 5.5 μm or 6 μm.

[0077] The present invention also provides a high-performance CW laser epitaxial structure, comprising, in sequence, a substrate metal layer, an N-type InP substrate 001, an N-InP buffer layer 002, an N-InGaAsP extended waveguide layer 003, an N-InP buffer layer 004, an N-InGaAsP lower confinement layer 005, an InGaAsP lower waveguide layer 006, an InGaAsP / InGaAsP quantum well active region 007, an InGaAsP upper waveguide layer 008, a P-InGaAsP upper confinement layer 009, and a ridge waveguide; wherein the ridge waveguide comprises the ridge waveguide of claim 1.

[0078] The first P-InP buffer layer 010-1 is in contact with the P-InGaAsP upper confinement layer 009;

[0079] The second P-InP buffer layer 010-2 is in contact with the P-InGaAsP upper confinement layer 009;

[0080] Also includes:

[0081] An insulating layer and a p-electrode are stacked in contact with the first P-InGaAs ohmic contact layer 016-1 and the second P-InGaAs ohmic contact layer 016-2. The insulating layer and the p-electrode surround the main waveguide 101 and the passive waveguide 102, and cover the structure between the main waveguide 101 and the passive waveguide 102. The p-electrode above the main waveguide 101 is connected to the first P-InGaAs ohmic contact layer 016-1 through a connecting metal layer.

[0082] The insulating layer above the main waveguide 101 has a through hole, and the connecting metal layer is embedded in the through hole.

[0083] The high-performance CW laser epitaxial structure provided by this invention includes a substrate metal layer.

[0084] The high-performance CW laser epitaxial structure provided by the present invention includes an N-type InP substrate 001 on the surface of a substrate metal layer.

[0085] The high-performance CW laser epitaxial structure provided by this invention includes an N-InP buffer layer 002 on the surface of an N-type InP substrate 001, wherein the thickness of the N-InP buffer layer 002 is preferably 500 nm. The N-InP buffer layer 002 is used to improve the surface flatness of the substrate.

[0086] The high-performance CW laser epitaxial structure provided by this invention includes an N-InGaAsP extended waveguide layer 003 on the surface of an N-InP buffer layer 002, wherein the composition of the N-InGaAsP extended waveguide layer 003 is preferably In. 1-x Ga x As y P 1-y In the direction from N-InP buffer layer 002 to N-InP buffer layer 004, x preferably increases from 0.171 to 0.208, and y preferably increases from 0.374 to 0.453; the thickness of the N-InGaAsP extended waveguide layer 003 is preferably 15±0.45nm, the emission wavelength is preferably 960~860nm, and the Si doping concentration is preferably 1~2×10 18 cm -3 .

[0087] The high-performance CW laser epitaxial structure provided by this invention includes an N-InP buffer layer 004 on the surface of an N-InGaAsP extended waveguide layer 003. The thickness L of the N-InP buffer layer 004 is preferably 1–2 μm, and the thickness of the N-InP buffer layer 004 is preferably 1600 ± 48 nm. The Si doping concentration is preferably 1–2 × 10⁻⁶. 18 cm -3 .

[0088] The high-performance CW laser epitaxial structure provided by this invention includes an N-InGaAsP lower confinement layer 005 on the surface of an N-InP buffer layer 004. The thickness of the N-InGaAsP lower confinement layer 005 is preferably 100±3 nm, the emission wavelength is preferably 1000±10 nm, and the Si doping concentration is preferably 1×10⁻⁶. 18 cm -3 .

[0089] The high-performance CW laser epitaxial structure provided by the present invention includes an InGaAsP lower waveguide layer 006 on the surface of the N-InGaAsP lower confinement layer 005. The thickness of the InGaAsP lower waveguide layer 006 is preferably 50±1.5nm, and the emission wavelength is preferably 1057±10nm.

[0090] The high-performance CW laser epitaxial structure provided by this invention includes an InGaAsP / InGaAsP quantum well active region 007 on the surface of the InGaAsP lower waveguide layer 006. The InGaAsP / InGaAsP quantum well active region 007 includes stacked quantum barrier layers and quantum well layers. The bottom and top of the InGaAsP / InGaAsP quantum well active region 007 are both quantum barrier layers. The number of quantum barrier layers is 6. The thickness of the quantum barrier layer is preferably 10±0.3nm and the emission wavelength is preferably 1120±10nm. The thickness of the quantum well layer is preferably 5±0.15nm and the emission wavelength is preferably 1120±10nm.

[0091] The high-performance CW laser epitaxial structure provided by the present invention includes an InGaAsP upper waveguide layer 008 on the surface of the InGaAsP / InGaAsP quantum well active region 007. The thickness of the InGaAsP upper waveguide layer 008 is preferably 25±0.75nm, and the emission wavelength is preferably 1057±10nm.

[0092] The high-performance CW laser epitaxial structure provided by this invention includes a P-InGaAsP confinement layer 009 on the surface of the InGaAsP waveguide layer 008. The thickness of the P-InGaAsP confinement layer 009 is preferably 75±2.25 nm, the emission wavelength is preferably 1000±10 nm, and the Zn doping concentration is preferably 1~2×10⁻⁶. 18 cm -3 .

[0093] The high-performance CW laser epitaxial structure provided by the present invention includes a ridge waveguide on the surface of the waveguide layer 008 on InGaAsP; the P-InP buffer layer 010-1 is in contact with the confinement layer 009 on P-InGaAsP; and the P-InP buffer layer 010-2 is in contact with the confinement layer 009 on P-InGaAsP.

[0094] The high-performance CW laser epitaxial structure provided by the present invention further includes: an insulating layer and a p-electrode that are in contact with and stacked with the P-InGaAs ohmic contact layer 016-1 and the P-InGaAs ohmic contact layer 016-2, wherein the insulating layer and the p-electrode surround the main waveguide 101 and the passive waveguide 102, and cover the structure between the main waveguide 101 and the passive waveguide 102; the p-electrode above the main waveguide 101 is connected to the P-InGaAs ohmic contact layer 016-1 through a connecting metal layer; the connecting metal layer is embedded in the insulating layer above the main waveguide 101.

[0095] In this invention, the p electrode preferably comprises a stacked Ti layer, a Pt layer and an Au layer; the p electrode is preferably embedded in the insulating layer; the p electrode is preferably a mesh structure, and the diameter of the mesh in the p electrode is preferably 65±1.95μm.

[0096] This invention also provides a method for fabricating the high-performance CW laser epitaxial structure described in the above technical solution, comprising the following steps:

[0097] On an N-type InP substrate 001, an N-InP buffer layer 002, an N-InGaAsP extended waveguide layer 003, an N-InP buffer layer 004, an N-InGaAsP lower confinement layer 005, an InGaAsP lower waveguide layer 006, an InGaAsP / InGaAsP quantum well active region 007, an InGaAsP upper waveguide layer 008, a P-InGaAsP upper confinement layer 009, a P-InP buffer layer, and a P-InGaAsP grating original layer are grown sequentially.

[0098] The original P-InGaAsP grating layer is obtained by photolithography.

[0099] A P-InP grating buried layer, a P-InP interconnect layer, a first P-InGaAsP barrier gradient layer, a second P-InGaAsP barrier gradient layer, and a P-InGaAs ohmic contact layer are sequentially deposited on the P-InGaAsP grating layer.

[0100] After coating the surface of the P-InGaAs ohmic contact layer with photoresist, exposure, development and etching are performed using a mask, and then the remaining photoresist is removed to form the main waveguide 101 and the passive waveguide 102.

[0101] The raw material for the insulating layer is deposited on the surfaces of the P-InGaAs ohmic contact layer 016-1, P-InGaAs ohmic contact layer 016-2 and P-InGaAs P confinement layer 009 to form the insulating layer.

[0102] After coating the insulating layer with photoresist, exposure, development and etching are performed using a mask. Then, the remaining photoresist is removed to form a via between the p electrode above the main waveguide 101 and the P-InGaAs ohmic contact layer 016-1 on the insulating layer.

[0103] Metal is deposited inside the through-hole to form a connecting metal layer;

[0104] After coating the surface of the insulating layer and the metal surface inside the through-hole of the connecting metal layer with photoresist, the surface is developed and etched using a mask to form a p-electrode pattern on the surface of the insulating layer and the surface of the connecting metal layer. After removing the excess metal formed during the formation of the connecting metal layer, the raw material of the p-electrode is deposited on the surface of the pattern to form the p-electrode.

[0105] After removing the remaining photoresist, the N-type InP substrate material is thinned to form an N-type InP substrate 001, and then the substrate metal layer material is deposited to form a substrate metal layer, thus obtaining the high-performance CW laser epitaxial structure.

[0106] The present invention also provides a high-performance CW laser, comprising the high-performance CW laser epitaxial structure described in the above technical solution or the high-performance CW laser epitaxial structure prepared by the preparation method described in the above technical solution.

[0107] The following detailed description, in conjunction with embodiments, of the ridge waveguide, high-performance CW laser epitaxial structure, and their fabrication method provided by the present invention, should not be construed as limiting the scope of protection of the present invention.

[0108] Figure 1 Schematic diagrams of the epitaxial structures in Embodiments 1-3 of the present invention.

[0109] Preparation methods of epitaxial structures in Examples 1-3 and Comparative Example 1:

[0110] First epitaxial growth:

[0111] Process conditions: MOCVD equipment, substrate N-InP 001 (length 600±18μm, width 250±7.5μm);

[0112] The growth sequence is as follows:

[0113] N-InP buffer layer 002: 500nm thick, used to improve the flatness of the substrate surface, with an emission wavelength of 917nm;

[0114] N-InGaAsP extended waveguide layer 003: 15 nm thickness, emission wavelength 960–860 nm, Si doping concentration 2 × 10⁻⁶ 18 cm -3 The composition of the N-InGaAsP extended waveguide layer (003) is In.1-x Ga x As y P 1-y In the direction from the N-InP buffer layer (002) to the N-InP buffer layer (004), x increases from 0.171 to 0.208, and y increases from 0.374 to 0.453.

[0115] N-InP buffer layer 004: 1600 nm thick, Si doping concentration 2 × 10⁻⁶ 18 cm -3 The emission wavelength is 917nm;

[0116] N-InGaAsP lower confinement layer 005: thickness 100nm, emission wavelength 1000nm, doping concentration 1×10⁻⁶ 18 cm -3 ;

[0117] InGaAsP waveguide layer 006: 50nm thickness, 1057nm emission wavelength;

[0118] InGaAsP / InGaAsP quantum well active region 007: both the bottom and top are quantum barrier layers; the number of quantum barrier layers is 6, the thickness of the quantum barrier layer is 10nm, the emission wavelength is 1120nm, the thickness of the quantum well layer is 5nm, and the emission wavelength is 1120nm.

[0119] InGaAsP waveguide layer 008: 25nm thickness, 1057nm emission wavelength;

[0120] P-InGaAsP confinement layer 009: 75 nm thick, emission wavelength 1000 nm, Zn doping concentration 1 × 10⁻⁶ 18 cm -3 ;

[0121] P-InP buffer layer 010: 80nm thickness, emission wavelength is 917nm;

[0122] P-InGaAsP grating layer 011: 30nm thick, used to form a distributed feedback DFB grating, with an emission wavelength of 1150nm;

[0123] A schematic diagram of the structure formed after the first extension is shown below. Figure 2 As shown.

[0124] Second epitaxial grating buried layer fabrication

[0125] Photolithography process: A grating pattern with a period of 202nm is fabricated on the surface of the grating layer 011 by holographic exposure or electron beam exposure;

[0126] Epitaxial growth:

[0127] P-InP grating buried layer 012: 300 nm thick, deposited using a pulse deposition method, with a Zn doping concentration of 1×10⁻⁶. 18 cm -3 Completely covers the grating structure;

[0128] P-InP interconnect layer 013: 300nm thickness, emission wavelength 917nm;

[0129] P-InGaAsP barrier gradient layers 014 and 015: two 50nm layers each, with Zn gradient doping concentrations starting from 1×10⁻⁶. 18 cm -3 Up to 5×10 19 cm -3 ;

[0130] P-InGaAs ohmic contact layer 016: 200 nm thick, Zn doping concentration 5 × 10⁻⁶ 19 cm -3 This reduces contact resistance.

[0131] A schematic diagram of the structure formed after the second extension is shown below. Figure 3 As shown.

[0132] Ridge waveguide fabrication

[0133] 1. Photoresist deposition: After cleaning, the structure formed after the second epitaxy is fixed on the spin coater's turntable. Photoresist is uniformly coated in liquid form on the surface of the P-InGaAs ohmic contact layer 016;

[0134] 2. Photoresist Patterning: After coating, the wafer undergoes soft baking to remove solvents from the photoresist, making it more stable. Before the photoresist cures, the wafer is exposed to ultraviolet light, and the double-ridge waveguide pattern is transferred onto the photoresist using a mask. After exposure, the wafer is immersed in a developer to remove unexposed photoresist (for positive photoresists) or exposed photoresist (for negative photoresists), forming the desired pattern. After development, the wafer typically undergoes hard baking to enhance the mechanical strength and corrosion resistance of the photoresist, preparing it for subsequent etching or deposition steps.

[0135] 3. Ridge etching: Wet etching (freezing point bromine aqueous solution and freezing point HCl solution) is used to remove the material under the photoresist to form a ridge structure (i.e., 10-1 to 16-1 and 10-2 to 16-2);

[0136] 4. Photoresist removal: Photoresist is removed using chemical solvents;

[0137] 5. Oxide deposition: A SiO2 insulating layer is grown by PECVD to achieve electrical isolation between the p electrode and the first P-InGaAs ohmic contact layer 16-1 and the second P-InGaAs ohmic contact layer 16-2, while reducing surface defects (dangling bonds) of the ridge waveguide.

[0138] 6. Photoresist deposition: Photoresist is deposited again;

[0139] 7. Photoresist patterning: Patterning is performed again;

[0140] 8. Oxide etching: The SiO2 insulating layer above the main waveguide 101 is etched with hydrofluoric acid solution to form a via;

[0141] 9. Photoresist removal: Remove the photoresist again;

[0142] 10. Connecting Metal Deposition: Ti, Pt and Au are deposited sequentially into the vias by magnetron sputtering or electroplating to form a connecting metal layer;

[0143] 11. Photoresist deposition: Photoresist is deposited again;

[0144] 12. Photoresist patterning: Patterning is performed again by removing excess metal formed during the deposition of the connecting metal in step 10 using a metal etching solution or HF solution to form the p-electrode pattern.

[0145] 13. Flexible metal deposition / patterning: Ti, Pt and Au are deposited onto the p-electrode pattern on the surface of the SiO2 insulating layer by magnetron sputtering or electroplating to form a p-electrode (Ti layer thickness 60nm; Pt layer thickness 60nm; Au layer thickness 20nm; p-electrode diameter 65±1.95μm).

[0146] 14. Photoresist removal: Remove any remaining photoresist;

[0147] 15. Wafer thinning: The substrate is thinned (approximately 120 μm) through mechanical grinding;

[0148] 16. Metal deposition on the back of the wafer: Ti, Pt and Au are deposited on the wafer by magnetron sputtering or electroplating to form a base metal layer (Ti layer thickness 60nm; Pt layer thickness 60nm; Au layer thickness 20nm).

[0149] Example 1

[0150] Wm=7μm, Wp=3.5μm, S=2μm, L=1μm.

[0151] Comparative Example 1

[0152] The only difference from Example 1 is that Wm = 1.3 μm.

[0153] Figure 12 This is a schematic diagram of the extensional structure in Comparative Example 1.

[0154] Based on the high-temperature saturation current and saturation power of the epitaxial structure obtained from software simulations of Comparative Example 1 and Example 1, the results are as follows: Figure 4 As shown.

[0155] Depend on Figure 4 It can be seen that at 320K, the high-temperature saturation current of a waveguide with a ridge width of 1.3μm is about 230mA and the saturation power is about 70mW; the high-temperature saturation current of a waveguide with a ridge width of 7.5μm is about 1000mA and the saturation power is about 320mW.

[0156] Figure 5 The optical field of the epitaxial structure (ordinary structure) in Comparative Example 1; Figure 6 The light field of the epitaxial structure (optimized structure 1) in Example 1.

[0157] like Figure 5 As shown, traditional single-ridge waveguides lack a mode selection mechanism, resulting in the coexistence of the TE0 fundamental mode and the TE1 first-order mode (with power ratios of 62% and 38%, respectively). In contrast, double-ridge waveguides, through directional coupling via a 0.8 μm tapered gap, couple the TE1 mode of the main waveguide with the fundamental mode of the passive auxiliary waveguide (Q > 1 × 10⁻⁶). 4 Resonant locking, utilizing the loss characteristics of a passive auxiliary waveguide, increases the single-mode purity of the main waveguide to 97%. Figure 6 ).

[0158] Figure 7 The far-field divergence angle (y direction) is shown for the epitaxial structure (ordinary structure) of Comparative Example 1 and the epitaxial structure (optimized structure 1) of Example 1.

[0159] Depend on Figure 7 It can be seen that, In 1-x Ga x As y P 1-y The refractive index gradient of the gradient extension layer (x = 0.171 → 0.208, y = 0.374 → 0.453) works synergistically with the lateral constraint of the double-ridge waveguide to compress the far-field divergence angle in the y direction to 28° ± 2°, thereby improving the overall beam quality and significantly enhancing fiber coupling efficiency and long-distance transmission stability.

[0160] Example 2

[0161] The only differences from Example 1 are: Wm = 7.5 μm, Wp = 4 μm, S = 3.2 μm, and L = 1.5 μm.

[0162] The optimized structure 2 under the above parameters was simulated using simulation software, and the simulation results were compared with those of the ordinary structure.

[0163] Figure 8 The light field of the epitaxial structure (optimized structure 2) in Example 2; Figure 9 The far-field divergence angle (y direction) is shown for the epitaxial structure (ordinary structure) of Comparative Example 1 and the epitaxial structure (optimized structure 2) of Example 2.

[0164] Depend on Figure 8 It can be seen that the higher-order modes of the main waveguide are coupled to the passive waveguide. Since there is no current injection into the passive waveguide, the higher-order modes are eventually lost, ensuring that the main waveguide operates in the fundamental mode.

[0165] Depend on Figure 9 It is known that the design of the present invention can achieve a smaller far-field divergence angle (20°±1°), thus having better beam quality.

[0166] Example 3

[0167] The only difference from Example 1 is that Wm = 9 μm, Wp = 5 μm, S = 4 μm, and L = 2 μm.

[0168] The optimized structure 3 under the above parameters was simulated using simulation software, and the simulation results were compared with those of the ordinary structure.

[0169] Figure 10 The light field of the epitaxial structure (optimized structure 3) in Example 3; Figure 11 The far-field divergence angle (y direction) is shown for the epitaxial structure (ordinary structure) of Comparative Example 1 and the epitaxial structure (optimized structure 3) of Example 3.

[0170] Depend on Figure 10 It can be seen that the higher-order modes of the main waveguide are coupled to the passive waveguide. Since there is no current injection into the passive waveguide, the higher-order modes are eventually lost, ensuring that the main waveguide operates in the fundamental mode.

[0171] Depend on Figure 11 It is known that the design of the present invention can achieve a smaller far-field divergence angle (20°±1°), thus having better beam quality.

[0172] When the propagation constants β = 2πn / λ between modes are similar, the optical fields will couple with each other. A 0.8μm conical coupling region (optical field) is constructed through the main / auxiliary waveguides (7μm / 3.5μm), achieving resonance (Q value > 1×10). 4 In the ) mode, the high-order mode (TE1) of the main waveguide is directionally coupled to the fundamental mode of the passive auxiliary waveguide, achieving a single-mode purity of >97% (side mode suppression ratio >45dB) under 500mA injection, which is 2.3 times more stable than the traditional single-ridge wide waveguide (dual-mode coexistence, TE0 / TE1 power ratio 62% / 38%) mode.

[0173] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A ridge waveguide, characterized in that, It includes a main waveguide (101) and a passive waveguide (102). The main waveguide (101) includes a first P-InP buffer layer (010-1), a first P-InGaAsP grating layer (011-1), a first P-InP grating buried layer (012-1), a first P-InP connection layer (013-1), a first P-InGaAsP barrier gradient layer (014-1), a first P-InGaAsP barrier gradient layer (015-1), and a first P-InGaAs ohmic contact layer (016-1) stacked sequentially. The passive waveguide (102) includes a second P-InP buffer layer (010-2), a second P-InGaAsP grating layer (011-2), a second P-InP grating buried layer (012-2), a second P-InP connection layer (013-2), a second P-InGaAsP barrier gradient layer (014-2), a second P-InGaAsP barrier gradient layer (015-2), and a second P-InGaAs ohmic contact layer (016-2) stacked sequentially. The ridge width range W of the main waveguide (101) m The ridge width range W of passive waveguide 102 is 5~10μm. p The distance S between the main waveguide (101) and the passive waveguide 102 is 1.5~5μm; The thickness of the first P-InP buffer layer (010-1) and the second P-InP buffer layer (010-2) is independently 80 ± 2.4 nm; The thickness of the first P-InGaAsP grating layer (011-1) and the second P-InGaAsP grating layer (011-2) is independently 30±0.9nm, and the period of the grating pattern in the first P-InGaAsP grating layer (011-1) and the second P-InGaAsP grating layer (011-2) is 202nm. The thickness of the first P-InP grating buried layer (012-1) and the second P-InP grating buried layer (012-2) are independently 300±9 nm, and the Zn doping concentration is independently 1~2×10⁻⁶. 18 cm -3 ; The thickness of the first P-InP interconnect layer (013-1) and the second P-InP interconnect layer (013-2) is 300±9nm; The thicknesses of the first P-InGaAsP barrier gradient layer (014-1), the second P-InGaAsP barrier gradient layer (014-2), the first P-InGaAsP barrier gradient layer (015-1), and the second P-InGaAsP barrier gradient layer (015-2) are independently 50 ± 1.5 nm. The Zn doping concentration ranges from 1 × 10⁻⁶ nm along the direction of either the first P-InGaAsP barrier gradient layer (014-1) or the second P-InGaAsP barrier gradient layer (015-1), or along the direction of either the first P-InGaAsP barrier gradient layer (014-2) or the second P-InGaAsP barrier gradient layer (015-2). 18 cm -3 Increment to 5×10 19 cm -3 ; The thickness of the first P-InGaAs ohmic contact layer (016-1) and the second P-InGaAs ohmic contact layer (016-2) are independently 200±6 nm, and the Zn doping concentration is independently 3~5×10⁻⁶. 19 cm -3 .

2. A high-performance CW laser epitaxial structure, characterized in that, The device comprises, in sequence, a substrate metal layer, an N-type InP substrate (001), an N-InP buffer layer (002), an N-InGaAsP extended waveguide layer (003), an N-InP buffer layer (004), an N-InGaAsP lower confinement layer (005), an InGaAsP lower waveguide layer (006), an InGaAsP / InGaAsP quantum well active region (007), an InGaAsP upper waveguide layer (008), a P-InGaAsP upper confinement layer (009), and a ridge waveguide; wherein the ridge waveguide comprises the ridge waveguide described in claim 1. The first P-InP buffer layer (010-1) is in contact with the P-InGaAsP upper confinement layer (009); The second P-InP buffer layer (010-2) is in contact with the P-InGaAsP upper confinement layer (009); Also includes: An insulating layer and a p-electrode are stacked in contact with and in contact with the first P-InGaAs ohmic contact layer (016-1) and the second P-InGaAs ohmic contact layer (016-2). The insulating layer and the p-electrode surround the main waveguide (101) and the passive waveguide 102, and cover the structure between the main waveguide (101) and the passive waveguide 102. The p-electrode above the main waveguide (101) is connected to the P-InGaAs ohmic contact layer (016-1) through a connecting metal layer. The insulating layer above the main waveguide (101) has a through hole, and the connecting metal layer is embedded in the through hole.

3. The high-performance CW laser epitaxial structure according to claim 2, characterized in that, The composition of the N-InGaAsP extended waveguide layer (003) is In 1-x Ga x As y P 1-y ; In the direction from the N-InP buffer layer (002) to the N-InP buffer layer (004), x increases from 0.171 to 0.208, and y increases from 0.374 to 0.

453.

4. The high-performance CW laser epitaxial structure according to claim 2, characterized in that, The thickness L of the N-InP buffer layer (004) is 1~2μm.

5. The high-performance CW laser epitaxial structure according to claim 2, characterized in that, The p-electrode comprises a stacked Ti layer, a Pt layer, and an Au layer; the p-electrode is embedded in the insulating layer; the bottom of the Ti layer is in contact with the insulating layer; In the vertical direction, the p electrode is circular in shape, and the diameter of the p electrode is 65±1.95μm.

6. The high-performance CW laser epitaxial structure according to any one of claims 2 to 5, characterized in that, The thickness of the N-InP buffer layer (002) is 500 nm; The thickness of the N-InGaAsP extended waveguide layer (003) is 15±0.45 nm, the emission wavelength is 960~860 nm, and the Si doping concentration is 1~2×10⁻⁶. 18 cm -3 ; The thickness of the N-InP buffer layer (004) is 1600±48 nm, and the Si doping concentration is 2×10⁻⁶. 18 cm -3 ; The thickness of the N-InGaAsP lower confinement layer (005) is 100±3nm, the emission wavelength is 1000±10nm, and the Si doping concentration is 1~2×10⁻⁶. 18 cm -3 ; The thickness of the InGaAsP lower waveguide layer (006) is 50±1.5nm, and the emission wavelength is 1057±10nm; The InGaAsP / InGaAsP quantum well active region (007) includes stacked quantum barrier layers and quantum well layers; the bottom and top of the InGaAsP / InGaAsP quantum well active region (007) are both quantum barrier layers; the number of quantum barrier layers is 6; the thickness of each quantum barrier layer is independently 10±0.3nm, and the emission wavelength is independently 1120±10nm; the thickness of each quantum well layer is independently 5±0.15nm, and the emission wavelength is independently 1120±10nm.

7. The high-performance CW laser epitaxial structure according to claim 6, characterized in that, The thickness of the InGaAsP waveguide layer (008) is 25±0.75nm, and the emission wavelength is 1057±10nm. The thickness of the P-InGaAsP confinement layer (009) is 75±2.25 nm, the emission wavelength is 1000±10 nm, and the Zn doping concentration is 1~2×10⁻⁶. 18 cm -3 .

8. The method for fabricating the high-performance CW laser epitaxial structure according to any one of claims 2 to 7, characterized in that, Includes the following steps: An N-InP buffer layer (002), an N-InGaAsP extended waveguide layer (003), an N-InP buffer layer (004), an N-InGaAsP lower confinement layer (005), an InGaAsP lower waveguide layer (006), an InGaAsP / InGaAsP quantum well active region (007), an InGaAsP upper waveguide layer (008), an P-InGaAsP upper confinement layer (009), a P-InP buffer layer, and a P-InGaAsP grating original layer are sequentially grown on an N-type InP substrate. The original P-InGaAsP grating layer is obtained by photolithography. A P-InP grating buried layer, a P-InP interconnect layer, a P-InGaAsP barrier gradient layer, a P-InGaAsP barrier gradient layer and a P-InGaAs ohmic contact layer are sequentially deposited on the P-InGaAsP grating layer. After coating the surface of the P-InGaAs ohmic contact layer with photoresist, exposure, development and etching are performed using a mask, and then the remaining photoresist is removed to form the main waveguide (101) and the passive waveguide (102). The raw material for the insulating layer is deposited on the surface of the P-InGaAs ohmic contact layer and the P-InGaAs P-on-confinement layer (009) to form the insulating layer; After coating the insulating layer with photoresist, exposure, development and etching are performed using a mask. Then the remaining photoresist is removed, and a via is formed on the insulating layer between the p electrode above the main waveguide (101) and the P-InGaAs ohmic contact layer (016-1). Metal is deposited inside the through-hole to form a connecting metal layer; After coating the surface of the insulating layer and the metal surface inside the via of the connecting metal layer with photoresist, development and etching are performed using a mask to form a p-electrode pattern on the surface of the insulating layer and the connecting metal layer. After removing the excess metal formed during the formation of the connecting metal layer, the raw material for the p-electrode is deposited on the surface of the pattern to form the p-electrode. After removing the remaining photoresist, the N-type InP substrate material is thinned to form an N-type InP substrate (001), and then the substrate metal layer material is deposited to form a substrate metal layer, thus obtaining the high-performance CW laser epitaxial structure.

9. A high-performance CW laser, characterized in that, Includes the high-performance CW laser epitaxial structure according to any one of claims 2 to 7 or the high-performance CW laser epitaxial structure prepared by the preparation method according to claim 8.

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