Light detection device and electronic apparatus

Abstract

The light detection device includes a photoelectric conversion layer and a color separator layer. The photoelectric conversion layer has a photoelectric conversion unit group in which a plurality of photoelectric conversion units capable of detecting respective phase differences of incident light are arranged. The color separator layer has a metasurface structure and is positioned closer to the light incident side than the photoelectric conversion layer.

Description

Technical Field

[0001] The invention relates to a photoelectric detection device and an electronic device. Background Art

[0002] In recent years, stacked image sensors have been proposed, in which a plurality of photoelectric conversion elements are stacked in the direction of light incidence. For example, a solid-state imaging element has been proposed in which a photoelectric conversion portion that photoelectrically converts light within one wavelength region is provided on the light incidence side, and a photoelectric conversion portion that photoelectrically converts light within another wavelength region is provided on the side opposite to the light incidence side (for example, see Patent Document 1).

[0003] Reference List

[0004] Patent Literature

[0005] Patent Document 1: JP 2017-157801 A Summary of the Invention

[0006] Technical issues

[0007] However, in the above-described related art, since the stacked photoelectric converters cannot be focused simultaneously, there is a problem in that the detection sensitivity of the phase difference decreases when attempting to detect the phase difference in the photoelectric converters out of focus.

[0008] Therefore, the present disclosure proposes a photoelectric detection device and an electronic device that can improve the detection sensitivity of phase difference.

[0009] Solution to the problem

[0010] According to the present disclosure, a photoelectric detection device is provided. The photoelectric detection device includes a photoelectric conversion layer and a color separator layer. The photoelectric conversion layer includes a photoelectric conversion unit group composed of multiple photoelectric conversion units capable of detecting phase differences between incident light beams incident thereon. The color separator layer is located closer to the light incident side than the photoelectric conversion layer and has a metasurface structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a system configuration diagram showing a schematic configuration example of a photodetection device according to an embodiment of the present disclosure.

[0012] Figure 2 is a cross-sectional view schematically showing the structure of a pixel region according to the first embodiment of the present disclosure.

[0013] Figure 3 1 is a diagram for explaining a stacked structure and a planar structure of a pixel region according to a first embodiment of the present disclosure.

[0014] Figure 4is a diagram for explaining the principle of a color separator according to an embodiment of the present disclosure.

[0015] Figure 5 is a diagram illustrating an incident state of green light in a pixel area according to the first embodiment of the present disclosure.

[0016] Figure 6 is a diagram illustrating an incident state of red light in a pixel area according to the first embodiment of the present disclosure.

[0017] Figure 7 is a diagram illustrating an incident state of blue light in a pixel area according to the first embodiment of the present disclosure.

[0018] Figure 8 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 1 of the first embodiment of the present disclosure.

[0019] Figure 9 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 2 of the first embodiment of the present disclosure.

[0020] Figure 10 1 and 2 are diagrams for explaining a stacked-layer structure and a planar structure of a pixel region according to Modification 3 of the first embodiment of the present disclosure.

[0021] Figure 11 is a cross-sectional view schematically showing the structure of a pixel region according to Modification 4 of the first embodiment of the present disclosure.

[0022] Figure 12 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 4 of the first embodiment of the present disclosure.

[0023] Figure 13 1 and 2 are diagrams for explaining a stacked-layer structure and a planar structure of a pixel region according to Modification 5 of the first embodiment of the present disclosure.

[0024] Figure 14 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 6 of the first embodiment of the present disclosure.

[0025] Figure 15 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 7 of the first embodiment of the present disclosure.

[0026] Figure 16 is a cross-sectional view schematically showing the structure of a pixel region according to a second embodiment of the present disclosure.

[0027] Figure 172 is a diagram for explaining a stacked structure and a planar structure of a pixel region according to a second embodiment of the present disclosure.

[0028] Figure 18 1 and 2 are diagrams for explaining a stacked-layer structure and a planar structure of a pixel region according to Modification 1 of the second embodiment of the present disclosure.

[0029] Figure 19 1 and 2 are diagrams for explaining a stacked-layer structure and a planar structure of a pixel region according to Modification 2 of the second embodiment of the present disclosure.

[0030] Figure 20 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 3 of the second embodiment of the present disclosure.

[0031] Figure 21 is a cross-sectional view schematically illustrating a structure of a pixel region according to Modification 4 of the second embodiment of the present disclosure.

[0032] Figure 22 1 and 2 are diagrams for explaining a stacked-layer structure and a planar structure of a pixel region according to Modification 4 of the second embodiment of the present disclosure.

[0033] Figure 23 is a cross-sectional view schematically showing the structure of a pixel region according to Modification 5 of the second embodiment of the present disclosure.

[0034] Figure 24 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 5 of the second embodiment of the present disclosure.

[0035] Figure 25 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 6 of the second embodiment of the present disclosure.

[0036] Figure 26 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 7 of the second embodiment of the present disclosure.

[0037] Figure 27 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 8 of the second embodiment of the present disclosure.

[0038] Figure 28 is a cross-sectional view schematically illustrating a structure of a pixel region according to Modification 9 of the second embodiment of the present disclosure.

[0039] Figure 29 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 9 of the second embodiment of the present disclosure.

[0040] Figure 30 3 is a diagram for explaining a stacked structure and a planar structure of a pixel region according to a third embodiment of the present disclosure.

[0041] Figure 31 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 1 of the third embodiment of the present disclosure.

[0042] Figure 32 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region according to Modification 2 of the third embodiment of the present disclosure.

[0043] Figure 33 is a cross-sectional view schematically showing the structure of a pixel region according to a fourth embodiment of the present disclosure.

[0044] Figure 34 4 is a diagram for explaining a stacked structure and a planar structure of a pixel region according to a fourth embodiment of the present disclosure.

[0045] Figure 35 is a block diagram showing a configuration example of an electronic device.

[0046] Figure 36 is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0047] Figure 37 It is a diagram showing an example of the installation positions of the vehicle exterior information detection portion and the imaging portion.

[0048] Figure 38 is a diagram illustrating an example of a schematic configuration of an endoscopic surgical system.

[0049] Figure 39 This is a block diagram illustrating an example of the functional configuration of a camera head and a camera control unit (CCU). DETAILED DESCRIPTION

[0050] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the embodiments described below, the same reference numerals are given to the same parts and repeated descriptions are omitted.

[0051] In recent years, stacked image sensors have been proposed, in which multiple photoelectric conversion elements are stacked in the direction of light incidence. For example, a solid-state imaging element has been proposed in which a photoelectric conversion unit that photoelectrically converts light within one wavelength region is arranged on the light incidence side, and a photoelectric conversion unit that photoelectrically converts light within another wavelength region is arranged on the side opposite to the light incidence side.

[0052] However, in the above-described related art, since the stacked photoelectric converters cannot be focused simultaneously, there is a problem in that the detection sensitivity of the phase difference decreases when attempting to detect the phase difference in the photoelectric converters out of focus.

[0053] Therefore, it is desired to realize a technology that can overcome the above-mentioned problems and improve the detection sensitivity of the phase difference in the photodetection device.

[0054] [Configuration of photoelectric detection device]

[0055] Figure 1 : is a diagram showing a configuration example of the photodetection device 1 according to an embodiment of the present disclosure. Figure 1 As shown, the photodetection device 1 of this embodiment includes a pixel region 3 and a peripheral circuit portion. The pixel region 3 is a so-called imaging region, in which pixels 2 including a plurality of photoelectric conversion elements are regularly and two-dimensionally arranged on a semiconductor substrate 11 (eg, a silicon substrate).

[0056] The pixel 2 includes a photoelectric conversion element (eg, a photodiode) and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors may include, for example, a transfer transistor (charge transfer unit described below), a reset transistor, and an amplifier transistor.

[0057] Multiple pixel transistors can also be configured from four transistors by adding a select transistor. Pixel 2 can also have a shared pixel structure. This pixel sharing structure is composed of multiple photodiodes and multiple transfer transistors, sharing a floating diffusion area, and sharing pixel transistors with each other.

[0058] The peripheral circuit section includes a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, and a control circuit 8. The control circuit 8 receives input clocks and data indicating an operation mode, and outputs data such as internal information of the photodetection device 1.

[0059] That is, the control circuit 8 generates a clock signal or a control signal based on the vertical synchronization signal, the horizontal synchronization signal, and the main clock, which serves as a reference for the operation of the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, etc. Then, the control circuit 8 inputs these signals to the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, etc.

[0060] The vertical drive circuit 4 is configured by, for example, a shift register and selects the pixel drive line 13 , supplies a pulse for driving pixels to the selected pixel drive line, and drives pixels in units of rows.

[0061] That is, the vertical drive circuit 4 selectively scans the pixels 2 in the pixel area 3 in the vertical direction in sequence in units of rows. Then, the vertical drive circuit 4 supplies pixel signals based on signal charges generated according to the amount of light received in, for example, a photodiode serving as a photoelectric conversion element of the pixel 2 to the column signal processing circuit 5 via a vertical signal line 9.

[0062] The column signal processing circuit 5 is arranged for each column of pixels 2 , for example, and performs signal processing such as noise removal on signals output from the pixels 2 of one row for each pixel column.

[0063] That is, the column signal processing circuit 5 performs signal processing such as CDS (correlated double sampling) for removing fixed pattern noise unique to the pixel 2, signal amplification, and AD conversion. A horizontal selection switch (not shown) is connected and provided between the output stage of the column signal processing circuit 5 and the horizontal signal line 10.

[0064] The horizontal drive circuit 6 is configured by, for example, a shift register and sequentially selects each of the column signal processing circuits 5 by sequentially outputting horizontal scanning pulses and causes each of the column signal processing circuits 5 to output a pixel signal to the horizontal signal line 10 .

[0065] The output circuit 7 processes the signals sequentially supplied from each column signal processing circuit 5 via the horizontal signal line 10 and outputs the processed signals. In this signal processing, for example, only buffering may be performed, or black level adjustment, column variation correction, various digital signal processing, etc. may be performed. The input / output terminal 12 exchanges signals with the outside.

[0066] [First embodiment]

[0067] Then, refer to Figures 2 to 7 , explaining the detailed configuration of the pixel region 3 according to the first embodiment. Figure 2 is a cross-sectional view schematically showing the structure of the pixel region 3 according to the first embodiment of the present disclosure. Figure 3 1 and 2 are diagrams for explaining the stacked structure and the planar structure of the pixel region 3 according to the first embodiment of the present disclosure.

[0068] It should be noted that Figure 3 and similar to Figure 3 In the following drawings, for ease of understanding, the same hatching is added to the photoelectric conversion portion and the photodiode that receive light in the same wavelength region. Figure 3 In the embodiment, the following are described in order from the side on which the incident light L from the outside is incident (hereinafter also referred to as the light incident side or immediately above). Figure 3 Similar to the following figures, (a), (b), (c) and (d).

[0069] The pixel region 3 includes a semiconductor layer 20, a wiring layer 30, an optical layer 40, a color separator layer 50, an organic photoelectric conversion layer 60, and an OCL (on-chip lens) layer 70. The semiconductor layer 20 is an example of a photoelectric conversion layer. The organic photoelectric conversion layer 60 is an example of another photoelectric conversion layer.

[0070] In the pixel region 3 , the OCL layer 70 , the organic photoelectric conversion layer 60 , the color separator layer 50 , the optical layer 40 , the semiconductor layer 20 , and the wiring layer 30 are stacked in this order from the light incident side.

[0071] The semiconductor layer 20 includes a semiconductor region 21 of a first conductivity type (e.g., P-type), a semiconductor region 22 of a second conductivity type (e.g., N-type), and a separator 23. In the semiconductor region 21 of the first conductivity type, the semiconductor region 22 of the second conductivity type is formed side by side in the planar direction (the array direction of the pixels 2) on a pixel basis, thereby forming the photodiodes PD1 and PD2 formed via a PN junction side by side in the planar direction.

[0072] The photodiode PD1 is an example of a first photoelectric conversion portion, and the photodiode PD2 is an example of a second photoelectric conversion portion.

[0073] For example, the photodiode PD1 is a photoelectric conversion section that receives and photoelectrically converts light in a red wavelength region (hereinafter also referred to as a “red region”). The red wavelength region (red region) is an example of a first wavelength region.

[0074] The photodiode PD2 is a photoelectric conversion section that receives and photoelectrically converts light in a blue wavelength region (hereinafter also referred to as a “blue region”). The blue wavelength region (blue region) is an example of a second wavelength region.

[0075] It should be noted that in the drawings of the present disclosure, for ease of understanding, (R) is described in the reference numerals of the photodiode or photoelectric conversion portion that receives light in the red region, and (B) is described in the reference numerals of the photodiode or photoelectric conversion portion that receives light in the blue region.

[0076] In the drawings of the present disclosure, (G) is described in the reference numerals of photodiodes or photoelectric converters that receive light in the green region, and (IR) is described in the reference numerals of photodiodes or photoelectric converters that receive light in the infrared region.

[0077] In the first embodiment, as Figure 3 As shown in (d), the photodiode group PD1A is configured by two photodiodes PD1 adjacent to each other, and the photodiode group PD2A is configured by two photodiodes PD2 adjacent to each other. The photodiode groups PD1A and PD2A are examples of photoelectric conversion unit groups.

[0078] For example, a plurality of photodiode groups PD1A and a plurality of photodiode groups PD2A are arranged side by side in a checkered pattern in the semiconductor layer 20. For example, the photodiode group PD1A or the photodiode group PD2A is provided for each pixel 2 in the pixel region 3 (see FIG. Figure 2 ) are formed individually.

[0079] return Figure 2 The separation portion 23 of the semiconductor layer 20 electrically and optically separates the photodiodes PD1 adjacent to each other, the photodiodes PD1 and PD2 adjacent to each other, and the photodiodes PD2 adjacent to each other.

[0080] It should be noted that in the present disclosure, photodiodes PD1 belonging to the same photodiode group PD1A can be electrically connected via a common color path (hereinafter also referred to as an overflow path) to allow carriers to escape to another pixel when one pixel is saturated. Similarly, in the present disclosure, photodiodes PD2 belonging to the same photodiode group PD2A can be electrically connected via an overflow path.

[0081] For example, the separation portion 23 is made of a material including a silicon oxide film, a silicon nitride film, amorphous silicon, polysilicon, a titanium oxide film, an oxide film of aluminum or tungsten, or a metal film.

[0082] The wiring layer 30 is provided on the surface opposite to the light incident side (hereinafter also referred to as the back side or immediately below) of the semiconductor layer 20. The wiring layer 30 is configured by forming a plurality of wiring films 32 and a plurality of pixel transistors 33 in an interlayer insulating film 31. The plurality of pixel transistors 33 read out charges accumulated in the photodiodes PD1 and PD2 and the photoelectric conversion unit 62 described below.

[0083] The optical layer 40 is provided on the surface on the light incident side in the semiconductor layer 20. The optical layer 40 includes a color filter 41 and a buffer layer 42. In the optical layer 40, the color filter 41 and the buffer layer 42 are stacked in this order from the light incident side.

[0084] The color filter 41 is an optical filter that transmits light in a predetermined wavelength region in the incident light L. For example, the color filter 41 includes a color filter 41R that transmits light in a red region and a color filter 41B that transmits light in a blue region.

[0085] The color filter 41R is arranged on the light incident side of the photodiode group PD1A (see Figure 3 ). The color filter 41B is arranged on the light incident side of the photodiode group PD2A (see Figure 3 ). The color filter 41R or the color filter 41B is formed separately for each pixel 2 in the pixel area 3, for example.

[0086] Note that a planarization layer (not shown) may be provided between the semiconductor layer 20 and the color filter 41 for planarizing the surface on which the color filter 41 is formed and preventing unevenness occurring during spin coating when forming the color filter 41 .

[0087] The buffer layer 42 is provided to adjust the focal length of the color separators CS1 and CS2 located in the color separator layer 50 described below. The buffer layer 42 is made of, for example, silicon oxide and has a thickness of about 1 (m) to 3 (m).

[0088] The color separator layer 50 is provided on the surface on the light incident side in the optical layer 40. The color separator layer 50 includes a low refractive index portion 51 and high refractive index portions 52 and 53.

[0089] The low refractive index portion 51 is made of a material having a refractive index lower than those of the high refractive index portions 52 and 53. The low refractive index portion 51 is made of, for example, a metal oxide such as silicon oxide or aluminum oxide, or an organic substance such as acrylic resin.

[0090] The high refractive index portions 52 and 53 are made of a material having a higher refractive index than the low refractive index portion 51. The high refractive index portions 52 and 53 are made of, for example, a silicon compound (such as silicon nitride or silicon carbide), a metal oxide (such as titanium oxide, tantalum oxide, niobium oxide, hafnium oxide, indium oxide, or tin oxide), or a composite oxide thereof. The high refractive index portions 52 and 53 may be made of an organic substance such as siloxane.

[0091] High refractive index portion 52 has a predetermined planar shape inside color separator layer 50 and is provided on the light incident side of photodiode group PD1A. On the light incident side of photodiode group PD1A, color separator CS1 is configured by low refractive index portion 51 and high refractive index portion 52.

[0092] High refractive index portion 53 has a predetermined planar shape and is provided on the light incident side of photodiode group PD2A inside color separator layer 50. Color separator CS2 is configured by low refractive index portion 51 and high refractive index portion 53 on the light incident side of photodiode group PD2A.

[0093] In the color separator layer 50, for example, Figure 3 As shown in (c), a plurality of color separators CS1 and a plurality of color separators CS2 are arranged side by side in a checkered pattern.

[0094] For example, for each pixel 2 in the pixel area 3 (see Figure 2 ) is formed separately as a color separator CS1 or a color separator CS2. The functions of these color separators CS1 and CS2 will be described below.

[0095] return Figure 2 The organic photoelectric conversion layer 60 is provided on the surface of the light incident side of the color separator layer 50. The organic photoelectric conversion layer 60 includes an interlayer insulating film 61 and a photoelectric conversion unit 62. The photoelectric conversion unit 62 is an example of another photoelectric conversion unit. In the organic photoelectric conversion layer 60, the photoelectric conversion unit 62 and the interlayer insulating film 61 are stacked in this order from the light incident side.

[0096] The interlayer insulating film 61 includes, for example, a single-layer film made of one of silicon oxide, TEOS, silicon nitride, silicon oxynitride, or the like, or a stacked film made of two or more of these.

[0097] The photoelectric conversion unit 62 includes an upper electrode 62a, a photoelectric conversion layer 62b, a charge storage layer 62c, lower electrodes 62d and 62e, and an insulating layer 62f. In the photoelectric conversion unit 62, the upper electrode 62a, the photoelectric conversion layer 62b, the charge storage layer 62c, the insulating layer 62f, and the lower electrodes 62d and 62e are stacked in this order from the light incident side.

[0098] The upper electrode 62a, the photoelectric conversion layer 62b, the charge storage layer 62c, and the insulating layer 62f are formed, for example, in common in all pixels 2 in the pixel region 3, and the lower electrodes 62d and 62e are formed, for example, separately for each pixel 2 in the pixel region 3. That is, for example, Figure 3 As shown in (b), in the pixel area 3, for each pixel 2 (see Figure 2 ) forms the photoelectric conversion unit 62 separately.

[0099] return Figure 2 The upper electrode 62a is electrically connected to the wiring film 32 of the wiring layer 30 via a wiring layer or a through electrode (not shown) in the peripheral portion of the pixel region 3. As a material of the upper electrode 62a, for example, a transparent conductive material such as indium tin oxide (ITO) is used.

[0100] The material of the upper electrode 62 a and the lower electrode 62 d is not limited to ITO, and various transparent conductive materials such as tin oxide, zinc oxide, IZO, IGO, IGZO, ATO, and AZO may be used.

[0101] Note that IZO is an oxide obtained by adding indium to zinc oxide, IGO is an oxide obtained by adding indium to gallium oxide, and IGZO is an oxide obtained by adding indium and gallium to zinc oxide. ATO is an oxide obtained by adding antimony to tin oxide, and AZO is an oxide obtained by adding antimony to zinc oxide.

[0102] The photoelectric conversion layer 62b is made of an organic semiconductor material and photoelectrically converts light in a selective wavelength range (for example, a green wavelength region (hereinafter also referred to as a "green region")) of incident light L from the outside. The green wavelength region (green region) is an example of a third wavelength region.

[0103] The photoelectric conversion layer 62b desirably includes one or both of a p-type organic semiconductor and an n-type organic semiconductor. The photoelectric conversion layer 62b is made of, for example, quinacridone, quinacridone derivatives, subphthalocyanine, subphthalocyanine derivatives, etc., and desirably contains at least one of these materials.

[0104] Note that the photoelectric conversion layer 62b is not limited to such a material and may be made of, for example, at least one of naphthalene, anthracene, phenanthrene, tetracene, pyrene, perylene, fluoranthene, and the like (all including derivatives).

[0105] As the photoelectric conversion layer 62 b , a polymer or a derivative of phenylenevinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, or the like can be used.

[0106] For the photoelectric conversion layer 62 b , a metal complex dye, a cyanine dye, a merocyanine dye, a phenylxanthene dye, a triphenylmethane dye, a carnaviocyanine dye, a xanthene dye, or the like can be used.

[0107] Examples of metal complex dyes include dithiol metal complex dyes, metal phthalocyanine dyes, metal porphyrin dyes, and ruthenium complex dyes. The photoelectric conversion layer 62b may contain other organic materials such as fullerene (C 60 ) and BCP (bathocuproine).

[0108] When green light is photoelectrically converted by the photoelectric conversion layer 62 b , for example, rhodamine-based dyes, melamine cyanine-based dyes, quinacridone derivatives, subphthalocyanine-based dyes (subphthalocyanine derivatives), etc. can be used for the photoelectric conversion layer 62 b .

[0109] The charge storage layer 62c is provided between the photoelectric conversion layer 62b and the insulating layer 62f and stores the charge generated in the photoelectric conversion layer 62b. The charge storage layer 62c is preferably formed using a material having higher charge mobility and a larger band gap than the photoelectric conversion layer 62b.

[0110] For example, the band gap of the constituent material of the charge storage layer 62c is preferably 3.0 eV or greater. Examples of such a material include oxide semiconductor materials such as IGZO and organic semiconductor materials.

[0111] Examples of the organic semiconductor material include transition metal dichalcogenides, silicon carbide (SiC), diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, and condensed heterocyclic compounds.

[0112] By providing such a charge storage layer 62 c in a layer below the photoelectric conversion layer 62 b , it is possible to prevent recombination of charges at the time of charge storage and improve transfer efficiency.

[0113] As the material of the lower electrodes 62d and 62e, the same material as the upper electrode 62a (for example, ITO) is used. The lower electrode 62d is electrically connected to the charge storage layer 62c and is electrically connected to a metal wire (not shown) that penetrates the interlayer insulating film 61, the color separator layer 50, the optical layer 40, and the semiconductor layer 20.

[0114] Such metal wires are formed using a material such as tungsten (W), titanium (Ti), aluminum (Al), or copper (Cu). Note that the metal wires also function as a light-blocking film between pixels.

[0115] The metal wire is electrically connected to a charge storage portion (not shown) formed near the interface on the side opposite to the light incident side of the semiconductor region 21. The charge storage portion is formed of a semiconductor region of the second conductivity type (eg, N type).

[0116] The lower electrode 62 e is electrically connected to the wiring film 32 of the wiring layer 30 via the wiring film 63 formed in the interlayer insulating film 61 , a through electrode not shown, or the like.

[0117] The charge generated by the photoelectric conversion section 62 is transferred to the charge storage section via the metal wire. This charge storage section temporarily stores the charge converted by the photoelectric conversion section 62 until the charge is read by the pixel transistor 33 corresponding to the charge storage section.

[0118] Specifically, in the photoelectric conversion portion 62, a predetermined voltage is applied from a not-shown drive circuit to the lower electrodes 62d and 62e and the upper electrode 62a during the charge storage period. For example, during the charge storage period, a positive voltage is applied to the lower electrodes 62d and 62e, and a negative voltage is applied to the upper electrode 62a. Furthermore, during the charge storage period, a positive voltage greater than the positive voltage applied to the lower electrode 62d is applied to the lower electrode 62e.

[0119] Therefore, in the charge storage period, electrons included in the charges photoelectrically converted and generated in the photoelectric conversion layer 62 b are attracted by the large positive voltage of the lower electrode 62 e and stored in the charge storage layer 62 c .

[0120] In the pixel 2, a reset operation is performed by operating a reset transistor (not shown) at a later stage of the charge storage period. Thus, the potential of the charge storage portion is reset, and the potential of the charge storage portion becomes the power supply voltage.

[0121] In pixel 2, a charge transfer operation is performed after completing this reset operation. In the charge transfer operation, a positive voltage higher than the positive voltage applied to the lower electrode 62e is applied from the driving circuit to the lower electrode 62d. As a result, the electrons stored in the charge storage layer 62c are transferred to the charge storage portion via the lower electrode 62d and the metal wire (not shown).

[0122] In the pixel 2 , a series of operations such as a charge storage operation, a reset operation, and a charge transfer operation are completed through the above-described operations.

[0123] The OCL layer 70 includes a plurality of OCLs 71. For example, Figure 3 As shown in (a), the OCL 71 formed into a hemispherical shape is for each pixel 2 in the pixel area 3 (see Figure 2 ) is provided, and collects the incident light L on the photoelectric conversion portion 62, the photodiode PD1, and the photodiode PD2 of the pixel 2. The OCL 71 is made of acrylic resin or the like.

[0124] Then, refer to Figure 4 The principles of the color separators CS1 and CS2 according to the embodiment are described. Figure 4 is a diagram for explaining the principle of color separators CS1 and CS2 according to an embodiment of the present disclosure.

[0125] like Figure 4 As shown, the first region R1 where the low refractive index portion 51 is located and the second region R2 where the high refractive index portions 52 and 53 are located are arranged in the color separator CS1 (or the color separator CS2).

[0126] Specifically, in the first region R1, the substrate having a low refractive index (eg, a refractive index n R1 ) is arranged with a length X in the light incident direction. In the second region R2, the low refractive index portion 51 having a high refractive index (eg, refractive index n R2 )'s high refractive index portions 52 and 53 are arranged with a length X in the light incident direction.

[0127] In a color separator CS1 or the like having such a configuration, when the incident light L is incident on the first region R1 and the second region R2 at the same time, a difference occurs in the travel distance of the incident light L between the first region R1 and the second region R2 due to the difference in refractive index between the low refractive index portion 51 and the high refractive index portions 52 and 53.

[0128] Specifically, the optical path length D1 of the first region R1 is calculated by the following expression (1).

[0129] D1=n R1 ×X (1)

[0130] The optical path length D2 of the second region R2 is calculated by the following expression (2).

[0131] D2=n R2 ×X (2)

[0132] Based on Expression (1) and Expression (2), the optical path length difference ΔD between the first region R1 and the second region R2 is calculated by the following Expression (3).

[0133] ΔD=D2-D1=X×(n R2 -n R1 ) (3)

[0134] like Figure 4 As shown, according to the optical path length difference ΔD between the first region R1 and the second region R2 , the incident light L passing through the color separators CS1 and CS2 is bent and emitted to the first region R1 where the light travels with delay.

[0135] The bending angle θ of the incident light L is calculated by the following expression (4).

[0136] θ=arctan(ΔD / λ)=arctan(X×(n R2 -n R1 ) / λ) (4)

[0137] λ: wavelength of incident light L

[0138] As shown in the above formula (4), the bending angle θ of the incident light L depends on the wavelength λ of the incident light L. Therefore, by appropriately selecting the refractive index n of the low refractive index portion 51 and the high refractive index portion 52 according to each wavelength region, R1 and n R2 , color separators CS1 and CS2 can bend light in various wavelength ranges in different desired directions.

[0139] Figure 5 is a diagram showing the green light L in the pixel area 3 according to the first embodiment of the present disclosure. G The incident state of the diagram. Figure 5 As shown, the green light L in the green wavelength region G The light is absorbed by the photoelectric conversion section 62 located closest to the light incident side among the plurality of photoelectric conversion sections, and is photoelectrically converted by this photoelectric conversion section 62 .

[0140] In the first embodiment, the green light L focused on the photoelectric conversion portion 62 corresponding thereto isG Since light can enter through the OCL 71 , the sensitivity of the photoelectric conversion unit 62 is improved.

[0141] Figure 6 is a diagram showing the green light L in the pixel area 3 according to the first embodiment of the present disclosure. R The incident state of the diagram. Figure 6 As shown, the green light L in the red wavelength region R The green light L transmitted through the photoelectric conversion section 62 is partially absorbed by the photoelectric conversion section 62 located closest to the light incident side among the plurality of photoelectric conversion sections and the remaining part is transmitted. R The color separators CS1 and CS2 in the color separator layer 50 are reached.

[0142] Here, in the first embodiment, as in Figure 6 As shown in FIG, the color separator CS1 makes the green light L R is incident on the photodiode group PD1A near (ie, directly below) the color separator CS1. In other words, in the color separator CS1 according to the first embodiment, the bending angle θ is controlled so that the incident green light L R Proceed to the photodiode group PD1A present immediately below the color separator CS1.

[0143] In the first embodiment, the color separator CS2 makes the green light L R is incident on the photodiode group PD1A adjacent to the photodiode group PD1A (i.e., adjacent to the photodiode group PD2A existing immediately below the photodiode group PD1A). In other words, in the color separator CS2 according to the first embodiment, the bending angle θ is controlled so that the incident green light L R Propagates to the adjacent photodiode group PD1A.

[0144] That is, in the first embodiment, in addition to the green light L incident on the OCL 71 present right above the photodiode group PD1A, R In addition, the green light L incident on the adjacent OCL 71 R It may also be incident on the photodiode group PD1A.

[0145] In other words, in the first embodiment, the focused green light L R Light is incident on the photodiode group PD1A from a color separator area configured by the color separator CS1 directly above the photodiode group PD1A and a plurality of color separators CS2 adjacent to such color separator CS1 directly above the photodiode group PD1A.

[0146] Therefore, in the first embodiment, the photoelectric conversion of the green light L can be improved.R The sensitivity of the photodiode group PD1A.

[0147] Figure 7 is a diagram showing the green light L in the pixel area 3 according to the first embodiment of the present disclosure. B The incident state of the diagram. Figure 7 As shown, the green light L in the blue wavelength region B A portion of the green light L is absorbed by the photoelectric conversion unit 62 located closest to the light incident side among the plurality of photoelectric conversion units and the remaining portion is transmitted. Then, the green light L transmitted through the photoelectric conversion unit 62 B The color separators CS1 and CS2 in the color separator layer 50 are reached.

[0148] Here, in the first embodiment, as Figure 7 As shown, the color separator CS2 makes the green light L B is incident on the photodiode group PD2A near (ie, immediately below) the color separator CS2. In other words, in the color separator CS2 according to the first embodiment, the bending angle θ is controlled so that the incident green light L B Propagates to the photodiode group PD2A existing just below the color separator CS2.

[0149] In the first embodiment, the color separator CS1 makes the green light L B is incident on the photodiode group PD2A adjacent to the color separator CS1 (i.e., adjacent to the photodiode group PD1A existing immediately below the color separator CS1). In other words, in the color separator CS1 according to the first embodiment, the bending angle θ is controlled so that the incident green light L B Propagates to the adjacent photodiode group PD2A.

[0150] That is, in the first embodiment, in addition to the green light L incident on the OCL 71 present just above the photodiode group PD2A, B In addition, the green light L incident on the OCL 71 adjacent to the photodiode group PD2A B It can also enter the photodiode group PD2A.

[0151] In other words, in the first embodiment, the focused green light L B Light is incident on the photodiode group PD2A from a color separator region configured by the color separator CS2 directly above the photodiode group PD2A and a plurality of color separators CS1 adjacent to the immediately upper color separator CS2 directly above the photodiode group PD2A.

[0152] Therefore, in the first embodiment, the photoelectric conversion green light L can be increased. BThe sensitivity of the photodiode group PD2A.

[0153] As described above, in the first embodiment, by disposing the color separators CS1 and CS2 on the light incident side farther than the photodiode groups PD1A and PD2A, the sensitivity of the photodiode groups PD1A and PD2A can be improved.

[0154] Furthermore, in the first embodiment, the two photodiodes PD1 belonging to the same photodiode group PD1A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0155] In this case, two photodiodes PD1 belonging to the same photodiode group PD1A share a color separator area within the same range configured by a color separator CS1 immediately above the two photodiodes PD1 and a plurality of color separators CS2 adjacent to the color separator CS1.

[0156] In this structure, the green light L incident on the two photodiodes PD1 belonging to the same photodiode group PD1A R Photoelectric conversion is performed by each photodiode PD1 to generate electrons that become read charges.

[0157] The generated electrons are sequentially transferred to the floating diffusion region of the pixel circuit via the transfer transistor and read as pixel signals of the respective photodiodes PD1. The column signal processing circuit 5 (see FIG. 5 ) to which the read pixel signals are input Figure 1 ) detects a phase difference by comparing the signal amounts of the respective photodiodes PD1, and calculates the distance to the target object based on the detected phase difference.

[0158] In the first embodiment, as Figure 6 As shown, because the green light L focused by the color separator layer 50 R It is incident on the photodiode group PD1A, so it can increase the green light L R The detection sensitivity of the phase difference in .

[0159] Similarly, in the first embodiment, two photodiodes PD2 belonging to the same photodiode group PD2A are configured as a photoelectric conversion portion capable of acquiring a phase difference of an image plane.

[0160] In this case, two photodiodes PD2 belonging to the same photodiode group PD2A share a color separator area in the same range configured by a color separator CS2 immediately above the two photodiodes PD2 and a plurality of color separators CS1 adjacent to such color separator CS2.

[0161] In this structure, the green light L incident on the two photodiodes PD2 belonging to the same photodiode group PD2A B Each photodiode PD2 performs photoelectric conversion to generate electrons that become read charges.

[0162] The generated electrons are sequentially transferred to the floating diffusion region of the pixel circuit via the transfer transistor and are read out as pixel signals of each photodiode PD2. The column signal processing circuit 5 (see FIG. 5 ) that reads the pixel signal is input. Figure 1 ) detects the phase difference by comparing the signal amounts of each photodiode PD2, and calculates the distance to the target object based on the detected phase difference.

[0163] In the first embodiment, as Figure 7 As shown, due to the green light L focused by the color separator layer 50 B It is incident on the photodiode group PD2A, so it can increase the green light L B The detection sensitivity of the phase difference in .

[0164] In the present disclosure, it is desirable that the color separators CS1 and CS2 have a meta-surface structure. This meta-surface structure is a structure in which the high refractive index portions 52 and 53 formed in one color separator CS1 and one color separator CS2 are arranged at a period equal to or less than the wavelength λ of the incident light L.

[0165] Therefore, since the effective refractive index of the color separators CS1 and CS2 can be changed, light in the wavelength region of each of the red region and the blue region can be further bent in a desired direction.

[0166] Therefore, according to the first embodiment, the photoelectric conversion of green light L can be improved. R and Green Light L B In addition, in the first embodiment, the sensitivity of the green light L can be improved. R and Green Light L B The detection sensitivity of the phase difference in .

[0167] In the first embodiment, the color filter 41R may be disposed between the color separator CS1 and the photodiode group PD1A and the color filter 41B may be disposed between the color separator CS2 and the photodiode group PD2A.

[0168] As described above, by providing the color filters 41R and 43B having better spectral characteristics than the color separators CS1 and CS2 , it is possible to suppress the occurrence of color mixture in the photodiode groups PD1A and PD2A.

[0169] In the first embodiment, it is desirable that, among the plurality of photoelectric converters, the photoelectric converter 62 on the light incident side photoelectrically converts light in the green region and the photodiode groups PD1A and PD2A on the side opposite to the light incident side photoelectrically convert light in the red and blue regions.

[0170] Therefore, the incident light L reaching the photodiode groups PD1A and PD2A can be dispersed in advance by the photoelectric conversion portion 62 into light having a wavelength longer than the green region (ie, green light L R ) and light having a wavelength shorter than that of the green region (ie, green light L B ).

[0171] Therefore, according to the first embodiment, it is possible to suppress the occurrence of color mixture in the photodiode groups PD1A and PD2A. Note that in the present disclosure, the color filter 41 may not necessarily be provided in the optical layer 40 .

[0172] In the first embodiment, it is desirable that the buffer layer 42 is provided in the optical layer 40. Therefore, even if the bending angle θ of the color separators CS1 and CS2 is further reduced, the green light L can be effectively R or green light L B The light is incident on the desired photodiode groups PD1A and PD2A.

[0173] That is, in the first embodiment, since the buffer layer 42 is provided in the optical layer 40, it is possible to make more focused green light L R or green light L B The green light L can be incident on the desired photodiode group PD1A or photodiode group PD2A. R or green light L B The detection sensitivity of the phase difference in .

[0174] In the first embodiment, the organic photoelectric conversion layer 60 may be provided on the light incident side relative to the color separator layer 50. Therefore, the incident light L reaching the color separators CS1 and CS2 may be dispersed in advance by the photoelectric conversion portion 62 into light having a wavelength longer than the green region (i.e., green light L). R ) and light having a wavelength shorter than that of the green region (ie, green light L B ).

[0175] Therefore, according to the first embodiment, it is possible to suppress the occurrence of color mixture in the photodiode groups PD1A and PD2A.

[0176] Note that, in the first embodiment described above, an example is described in which light in the green region is photoelectrically converted by the photoelectric conversion portion 62 on the light incident side, and light in the red region and light in the blue region are photoelectrically converted by the semiconductor layer 20 on the back side. However, the present disclosure is not limited to this example.

[0177] For example, in the present disclosure, light in the red region may be photoelectrically converted by the photoelectric conversion portion 62 on the light incident side, and light in the green region and light in the blue region may be photoelectrically converted on the back side by the semiconductor layer 20. In the present disclosure, light in the blue region may be photoelectrically converted by the photoelectric conversion portion 62 on the light incident side, and light in the red region and light in the green region may be photoelectrically converted by the semiconductor layer 20 on the back side.

[0178] [Various Modifications of the First Embodiment]

[0179] Next, refer to Figures 8-15 Various modifications of the first embodiment will be described. Figure 8 is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification example 1 of the first embodiment of the present disclosure, and corresponds to the first embodiment. Figure 3 Schematic diagram of .

[0180] like Figure 8 As shown, in this modification 1, the arrangement of the semiconductor layer 20 is different from that of the first embodiment (see Figure 3 Specifically, in this modification 1, the photodiode groups PD1A and PD2A are not provided in most pixels 2 (see FIG. Figure 2 ), and one photodiode PD1 or one photodiode PD2 is set in most pixels 2.

[0181] On the other hand, a photodiode PD2 whose light-receiving area is halved by the light-shielding film 24 located on one side (for example, the left side) is provided in a portion of the pixel 2. Similarly, a photodiode PD2 whose light-receiving area is halved by the light-shielding film 24 located on the other side (for example, the right side) is provided in another portion of the pixel 2 near that portion.

[0182] One photodiode group PD2A is composed of the two photodiodes PD2 having half the area. In this modification 1, the two photodiodes PD2 belonging to the same photodiode group PD2A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0183] Therefore, the photoelectric conversion of green light L can be improved B The sensitivity of the photodiode group PD2A (see Figure 7 ). In addition, in this modification example 1, the green light L can be increased. BThe detection sensitivity of the phase difference in .

[0184] It should be noted that Figure 8 In the example shown in FIG. 1 , an example is described in which one photodiode group PD2A is configured by two photodiodes PD2 , and the light receiving areas of the two photodiodes PD2 are halved. However, the present disclosure is not limited to this example.

[0185] For example, a photodiode group PD1A (see Figure 3 ) can be configured by two photodiodes PD1, the light receiving area of ​​the two photodiodes PD1 is halved, and the two photodiodes PD1 can be configured as a photoelectric conversion unit capable of acquiring a phase difference of an image plane. Therefore, the green light L can be improved. R The detection sensitivity of the phase difference in Figure 6 ).

[0186] Figure 9 1 is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the second modification of the first embodiment of the present disclosure. Figure 9 As shown, in this modification 2, the configurations of the color separator layer 50 and the semiconductor layer 20 are different from those in the first embodiment described above (see FIG. Figure 3 ).

[0187] Specifically, in this modification 2, color separators CS1 and CS2 having an area equivalent to two×two OCLs 71 are provided in the color separator layer 50. On the back side of the color separator CS1, two×two, ie, a total of four photodiodes PD1 are positioned.

[0188] One photodiode group PD1A is composed of four photodiodes PD1. In the second modification, the four photodiodes PD1 belonging to the same photodiode group PD1A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0189] In this case, the four photodiodes PD1 belonging to the same photodiode group PD1A share a color separator area within the same range configured by the color separator CS1 immediately above the four photodiodes PD1 and a plurality of color separators CS2 adjacent to the color separator CS1 .

[0190] In this modification 2, the green light L focused by the color separator layer 50 is R (See Figure 6 ) is incident on the photodiode group PD1A, thereby improving the green light L R The detection sensitivity of the phase difference in .

[0191] In this modification 2, a total of two×two (ie, four photodiodes PD2 ) are located on the back side of the color separator CS2 .

[0192] The four photodiodes PD2 constitute one photodiode group PD2A. In this modification 2, the four photodiodes PD2 belonging to the same photodiode group PD2A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0193] In this case, the four photodiodes PD2 belonging to the same photodiode group PD2A share a color separator area within the same range configured by the color separator CS2 immediately above the four photodiodes PD2 and a plurality of color separators CS1 adjacent to such color separator CS2.

[0194] In this modification 2, the green light L focused by the color separator layer 50 is B (See Figure 7 ) is incident on the photodiode group PD2A, thereby increasing the green light L B The detection sensitivity of the phase difference in .

[0195] In this modification 2, since the photodiode groups PD1A and PD2A include two×two photodiodes PD1 and two×two photodiodes PD2 , respectively, the distance to the target object can be measured regardless of the texture direction and color of the target object.

[0196] Figure 10 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification example 3 of the first embodiment of the present disclosure. Figure 10 As shown, in this modification 3, the configurations of the color separator layer 50 and the semiconductor layer 20 are different from those in the first embodiment described above (see FIG. Figure 3 ).

[0197] Specifically, in this modification 3, color separators CS1 and CS2 having areas equivalent to 2×1 OCLs 71 are provided in the color separator layer 50. Two×one, ie, a total of two photodiodes PD1 are located on the back side of the color separator CS1.

[0198] One photodiode group PD1A is composed of two photodiodes PD1. In the third modification, the two photodiodes PD1 belonging to the same photodiode group PD1A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0199] In this case, two photodiodes PD1 belonging to the same photodiode group PD1A share a color separator area within the same range configured by a color separator CS1 immediately above the two photodiodes PD1 and a plurality of color separators CS2 adjacent to the color separator CS1.

[0200] In this modification 3, the green light L focused by the color separator layer 50 R (See Figure 6 ) is incident on the photodiode group PD1A, so the green light L R The detection sensitivity of the phase difference in .

[0201] In the present modification example 3, two×one, that is, two photodiodes PD2 in total are located on the rear side of the color separator CS2.

[0202] The two photodiodes PD2 constitute one photodiode group PD2A. In this modification 3, the two photodiodes PD2 belonging to the same photodiode group PD2A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0203] In this case, two photodiodes PD2 belonging to the same photodiode group PD2A share a color separator area in the same range configured by a color separator CS2 immediately above the two photodiodes PD2 and a plurality of color separators CS1 adjacent to such color separator CS2.

[0204] In this modification 3, the green light L focused by the color separator layer 50 is B (See Figure 7 ) is incident on the photodiode group PD2A, thereby increasing the green light L B The detection sensitivity of the phase difference in .

[0205] Figure 11 is a cross-sectional view schematically showing the structure of the pixel region 3 according to Modification 4 of the first embodiment of the present disclosure. Figure 12 1 and 2 are diagrams for explaining a stacked structure and a planar structure of the pixel region 3 according to Modification 4 of the first embodiment of the present disclosure.

[0206] like Figure 11 and Figure 12 As shown, in this modification 4, the configuration of the organic photoelectric conversion layer 60 is different from that in the first embodiment (see Figure 2 and Figure 3Specifically, in this modification 4, two photoelectric conversion units 62 are located on the back side of one OCL 71, and these two photoelectric conversion units 62 configure one photoelectric conversion unit group 62A. The photoelectric conversion unit group 62A is an example of another photoelectric conversion unit group.

[0207] In this modification 4, two photoelectric converters 62 belonging to the same photoelectric converter group 62A are configured to obtain a phase difference on the image plane. In this case, the two photoelectric converters 62 belonging to the same photoelectric converter group 62A share the OCL 71 directly above the two photoelectric converters 62.

[0208] In this modification 4, the green light L focused by the OCL 71 G (See Figure 5 ) is incident on the photoelectric conversion unit group 62A, so the green light L G The detection sensitivity of the phase difference in .

[0209] In the present modification 4, since the OCL 71 and the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0210] Note that in Figure 12 In the illustrated example, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configurations as those in the first embodiment described above (see FIG. Figure 3 ). However, the present disclosure is not limited to this example. For example, Figure 12 In the example shown in FIG, the semiconductor layer 20 may have the same configuration as in the above-described modification 1 (see FIG. Figure 8 ).

[0211] exist Figure 12 In the example shown, the color separator layer 50 and the semiconductor layer 20 may have the same configuration as that of the above explained modification 2 (see Figure 9 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as those in the above-explained modification example 3 (see Figure 10 ) in the same configuration.

[0212] Figure 13 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the fifth modification of the first embodiment of the present disclosure. Figure 13 As shown, in this modification example 5, the configuration of the organic photoelectric conversion layer 60 is the same as that of the modification example 4 of the first embodiment (see Figure 12 ) have different configurations.

[0213] Specifically, in the present modification example 5, the photoelectric conversion portion group 62A is not provided in most of the pixels 2 , and one photoelectric conversion portion 62 is provided in most of the pixels 2 .

[0214] On the other hand, the photoelectric conversion portion 62 whose light receiving area is halved by the light blocking film 64 located on one side (for example, the left side) is provided in a portion of the pixel 2. Similarly, the photoelectric conversion portion 62 whose light receiving area is halved by the light shielding film 64 located on the other side (for example, the right side) is provided in another portion of the pixel 2 close to the portion of the pixel 2.

[0215] One photoelectric converter group 62A is composed of the two photoelectric converters 62 having a halved area. In Modification 5, the two photoelectric converters 62 belonging to the same photoelectric converter group 62A are configured to obtain a phase difference on the image plane.

[0216] Here, in the present modification 5, the green light L focused by the OCL 71 G (See Figure 5 ) is incident on the photoelectric conversion unit group 62A, so the green light L G The detection sensitivity of the phase difference in .

[0217] In the fifth modification, since the OCL 71 and the color separator layer 50 can focus all three colors of light, RGB, respectively, the detection sensitivity of the phase difference in all three colors of light, RGB, can be improved.

[0218] Note that in Figure 13 In the illustrated example, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configurations as those in the first embodiment described above (see FIG. Figure 3 ). However, the present disclosure is not limited to this example. For example, Figure 13 In the example shown, the semiconductor layer 20 may have the same configuration as in the above-described Modification 1 (see Figure 8 ).

[0219] exist Figure 13 In the example shown, the color separator layer 50 and the semiconductor layer 20 may have the same structure as in Modification 2 (see Figure 9 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-mentioned modification example 3 (see Figure 10 ) in the same construction.

[0220] Figure 14 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification example 6 of the first embodiment of the present disclosure. Figure 14As shown, in this modification example 6, the configuration of the OCL layer 70 and the organic photoelectric conversion layer 60 is the same as that of the modification example 4 of the first embodiment (see Figure 12 ) are configured differently.

[0221] Specifically, in this modification example 6, a plurality of OCLs 71A (see FIG. Figure 11 ) are arranged side by side in a matrix in the OCL layer 70. Two×two, that is, a total of four photoelectric conversion portions 62 are located on the rear side of one OCL 71A.

[0222] One photoelectric converter group 62A is composed of four photoelectric converters 62. Furthermore, in Modification 6, the four photoelectric converters 62 belonging to the same photoelectric converter group 62A are configured to obtain a phase difference on the image plane. In this case, the four photoelectric converters 62 belonging to the same photoelectric converter group 62A share an OCL 71A located immediately above the four photoelectric converters 62.

[0223] In this modification 6, the green light L focused by the OCL 71A G (See Figure 5 ) is incident on the photoelectric conversion unit group 62A, so the green light L G The detection sensitivity of the phase difference in .

[0224] In the present modification example 6, since the OCL 71A and the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0225] In the present modification example 6, since the photoelectric conversion portion group 62A includes two×two photoelectric conversion portions 62 , the distance to the target object can be measured regardless of the texture direction.

[0226] Note that in Figure 14 In the illustrated example, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configurations as those in the first embodiment described above (see FIG. Figure 3 ). However, the present disclosure is not limited to this example. For example, Figure 14 In the example shown in FIG, the semiconductor layer 20 may have the same configuration as in the above-described modification 1 (see FIG. Figure 8 ).

[0227] exist Figure 14 In the example shown, the color separator layer 50 and the semiconductor layer 20 may have the same configuration as that of the above explained modification 2 (see Figure 9 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as those in the above-explained modification example 3 (see Figure 10 ) in the same configuration.

[0228] Figure 15 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification 7 of the first embodiment of the present disclosure. Figure 15 As shown, in this modification 7, the configuration of the OCL layer 70 is different from that of the first embodiment (see Figure 3 ).

[0229] Specifically, in Modification 7, a semi-ellipsoidal surface OCL 71B (see FIG. Figure 11 ) is provided in a portion of the OCL layer 70. Two×one, that is, a total of two photoelectric conversion units 62 are located on the back side of the OCL 71B.

[0230] One photoelectric conversion section group 62A is composed of two photoelectric conversion sections 62. Furthermore, in this seventh modification, the two photoelectric conversion sections 62 belonging to the same photoelectric conversion section group 62A are configured to obtain a phase difference on the image plane. In this case, the two photoelectric conversion sections 62 belonging to the same photoelectric conversion section group 62A share the OCL 71B located directly above the two photoelectric conversion sections 62.

[0231] In this modification 7, the green light L focused by the OCL 71B G (See Figure 5 ) is incident on the photoelectric conversion unit group 62A, so the green light L G The detection sensitivity of the phase difference in .

[0232] In the present modification example 7, since the OCL 71B and the color separator layer 50 can focus all three colors of light, RGB, respectively, the detection sensitivity of the phase difference in all three colors of light, RGB, can be improved.

[0233] Note that in Figure 15 In the illustrated example, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configurations as those in the first embodiment described above (see FIG. Figure 3 ). However, the present disclosure is not limited to this example. For example, Figure 15 In the example shown in FIG, the semiconductor layer 20 may have the same configuration as in the first embodiment described above (see FIG. Figure 8 ).

[0234] exist Figure 15 In the example shown in FIG, the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-explained modification 2 (see FIG. Figure 9), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as those in the above-explained modification example 3 (see Figure 10 ) in the same configuration.

[0235] [Second embodiment]

[0236] Then, refer to Figure 16 and Figure 17 The detailed configuration of the pixel region 3 according to the second embodiment will be described. Figure 16 is a cross-sectional view schematically showing the structure of the pixel region 3 according to the second embodiment of the present disclosure. Figure 17 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region 3 according to a second embodiment of the present disclosure.

[0237] The pixel region 3 in the second embodiment includes a semiconductor layer 20, a wiring layer 30, an optical layer 40, a color separator layer 50, an organic photoelectric conversion layer 60, and an OCL layer 70. In the pixel region 3, the OCL layer 70, the organic photoelectric conversion layer 60, the color separator layer 50, the optical layer 40, the semiconductor layer 20, and the wiring layer 30 are stacked in this order from the light incident side.

[0238] The semiconductor layer 20 includes a semiconductor region 21 of a first conductivity type (e.g., P-type), a semiconductor region 22 of a second conductivity type (e.g., N-type), and a separator 23. In the semiconductor region 21 of the first conductivity type, the semiconductor region 22 of the second conductivity type is formed side by side in the planar direction (the array direction of the pixels 2) on a pixel-by-pixel basis. As a result, the photodiodes PD1, PD2, and PD3 are formed side by side in the planar direction via PN junctions. The photodiode PD3 is an example of a third photoelectric conversion unit.

[0239] For example, photodiode PD1 is a photoelectric conversion unit that receives and photoelectrically converts light in the red region. Photodiode PD2 is a photoelectric conversion unit that receives and photoelectrically converts light in the blue region. Photodiode PD3 is a photoelectric conversion unit that receives and photoelectrically converts light in the green region. That is, in the second embodiment, semiconductor layer 20 photoelectrically converts light of three colors, RGB.

[0240] In the second embodiment, if Figure 17 As shown in (d), the photodiode group PD1A is configured by two adjacent photodiodes PD1. The photodiode group PD2A is configured by two adjacent photodiodes PD2, and the photodiode group PD3A is configured by two adjacent photodiodes PD3. The photodiode group PD3A is an example of a photoelectric conversion unit group.

[0241] In the semiconductor layer 20, for example, a plurality of photodiode groups PD1A, a plurality of photodiode groups PD2A, and a plurality of photodiode groups PD3A are arranged in a so-called Bayer array. The photodiode group PD1A, the photodiode group PD2A, or the photodiode group PD3A is arranged for each pixel 2 in the pixel region 3 (see FIG. Figure 16 ) are formed individually.

[0242] Return Reference Figure 16 The separation portion 23 of the semiconductor layer 20 electrically and optically separates the photodiodes PD1 adjacent to each other, the photodiodes PD1 and PD2 adjacent to each other, and the photodiodes PD2 adjacent to each other.

[0243] Separator 23 electrically and optically separates adjacent photodiodes PD3, adjacent photodiodes PD1 and PD3, and adjacent photodiodes PD2 and PD3. Note that in the present disclosure, photodiodes PD3 belonging to the same photodiode group PD3A may be electrically connected to each other through an overflow path.

[0244] The optical layer 40 is provided on the surface on the light incident side in the semiconductor layer 20. The optical layer 40 includes a color filter 41 and a buffer layer 42. In the optical layer 40, the color filter 41 and the buffer layer 42 are stacked in this order from the light incident side.

[0245] The color filter 41 is an optical filter that transmits light in a predetermined wavelength range in the incident light L. For example, the color filter 41 includes a color filter 41R that transmits light in a red region, a color filter 41B that transmits light in a blue region (see FIG. Figure 2 ), and a color filter 41G that transmits light in the green region.

[0246] The color filter 41R is arranged on the light incident side of the photodiode group PD1A (see Figure 17 ). The color filter 41B is arranged on the light incident side of the photodiode group PD2A (see Figure 17 ).

[0247] The color filter 41G is arranged on the light incident side of the photodiode group PD3A (see Figure 17 The color filter 41R, the color filter 41B, or the color filter 41G is formed separately for each pixel 2 in the pixel area 3, for example.

[0248] The color separator layer 50 is provided on the surface on the light incident side in the optical layer 40. The color separator layer 50 includes a low refractive index portion 51, a high refractive index portion 52, a high refractive index portion 53 (see FIG. Figure 2 ) and the high refractive index portion 54.

[0249] The high refractive index portions 52, 53, and 54 are made of a material having a higher refractive index than the low refractive index portion 51. The high refractive index portion 52 has a predetermined planar shape inside the color separator layer 50 and is provided on the light incident side of the photodiode group PD1A. On the light incident side of the photodiode group PD1A, the color separator CS1 is configured by the low refractive index portion 51 and the high refractive index portion 52.

[0250] The high refractive index portion 53 has a predetermined planar shape inside the color separator layer 50 and is provided on the light incident side of the photodiode group PD2A. On the light incident side of the photodiode group PD2A, the color separator CS2 (see Figure 17 ) is configured by a low refractive index portion 51 and a high refractive index portion 53.

[0251] High refractive index portion 54 has a predetermined planar shape and is provided on the light incident side of photodiode group PD3A inside color separator layer 50. Color separator CS3 is configured by low refractive index portion 51 and high refractive index portion 54 on the light incident side of photodiode group PD3A.

[0252] For example, a color separator CS1 , a color separator CS2 , or a color separator CS3 is formed individually for each pixel 2 of the pixel area 3 .

[0253] The organic photoelectric conversion layer 60 is provided on the light incident side surface of the color separator layer 50. The organic photoelectric conversion layer 60 includes an interlayer insulating film 61 and a photoelectric converter 62. In the organic photoelectric conversion layer 60, the photoelectric converter 62 and the interlayer insulating film 61 are stacked in this order from the light incident side.

[0254] The photoelectric conversion unit 62 includes an upper electrode 62a, a photoelectric conversion layer 62b, a charge storage layer 62c, lower electrodes 62d and 62e, and an insulating layer 62f. In the photoelectric conversion unit 62, the upper electrode 62a, the photoelectric conversion layer 62b, the charge storage layer 62c, the insulating layer 62f, and the lower electrodes 62d and 62e are stacked in this order from the light incident side.

[0255] The photoelectric conversion layer 62b is made of an organic semiconductor material and photoelectrically converts light in a selective wavelength region (for example, an infrared wavelength region (hereinafter also referred to as the "infrared region")) of incident light L from the outside. The infrared wavelength region (infrared region) is an example of a fourth wavelength region. That is, in the second embodiment, the photoelectric conversion unit 62 photoelectrically converts light in the infrared region. In the second embodiment, the photoelectric conversion unit 62 is an example of a fourth photoelectric conversion unit.

[0256] In the second embodiment, light in the infrared region (infrared light) is absorbed by the photoelectric conversion section 62 located closest to the light incident side among the plurality of photoelectric conversion sections and is photoelectrically converted by such photoelectric conversion section 62. In the second embodiment, since infrared light focused on the photoelectric conversion section 62 corresponding to the OCL 71 can be incident by the OCL 71, the sensitivity of the photoelectric conversion section 62 is improved.

[0257] As in the first embodiment described above, in the second embodiment, the color separator CS1 of the color separator layer 50 causes the green light L R (See Figure 6 ) is incident on the photodiode group PD1A near (ie, immediately below) the color separator CS1.

[0258] The color separator CS2 adjacent to the color separator CS1 makes the green light L R The light is incident on the photodiode group PD1A adjacent to the color separator CS2 (ie, adjacent to the photodiode group PD2A existing immediately below).

[0259] In addition, the color separator CS3 adjacent to the color separator CS1 makes the green light L R The light is incident on the photodiode group PD1A adjacent to the color separator CS3 (ie, adjacent to the photodiode group PD3A existing immediately below).

[0260] That is, in the second embodiment, the focused green light L R Light is incident on the photodiode group PD1A from a color separator area configured by the color separator CS1 directly above the photodiode group PD1A and a plurality of color separators CS2 and CS3 adjacent to the color separator CS1 directly above the photodiode group PD1A.

[0261] Therefore, in the second embodiment, the photoelectric conversion of green light L can be improved. R The sensitivity of the photodiode group PD1A.

[0262] In the second embodiment, the color separator CS2 of the color separator layer 50 makes the green light L B (See Figure 7 ) is incident on the photodiode group PD2A near (ie, immediately below) the color separator CS2.

[0263] The color separator CS1 adjacent to the color separator CS2 makes the green light L B The light is incident on the photodiode group PD2A adjacent to the color separator CS1 (ie, adjacent to the photodiode group PD1A existing immediately below).

[0264] In addition, the color separator CS3 adjacent to the color separator CS2 makes the green light L B The light is incident on the photodiode group PD2A adjacent to the color separator CS3 (adjacent to the photodiode group PD3A existing immediately below).

[0265] That is, in the second embodiment, the green light L is focused B Light is incident on the photodiode group PD2A from a color separator area configured by the color separator CS2 directly above the photodiode group PD2A and a plurality of color separators CS1 and CS3 adjacent to the color separator CS2 directly above the photodiode group PD2A.

[0266] Therefore, in the second embodiment, the photoelectric conversion green light L can be increased. B The sensitivity of the photodiode group PD2A.

[0267] In the second embodiment, the color separator CS3 of the color separator layer 50 makes the green light L G (See Figure 5 ) is incident on the photodiode group PD3A near (ie, existing immediately below) the color separator CS3.

[0268] The color separator CS1 adjacent to the color separator CS3 makes the green light L G The light is incident on the photodiode group PD3A adjacent to the color separator CS1 (ie, adjacent to the photodiode group PD1A existing immediately below).

[0269] In addition, the color separator CS2 adjacent to the color separator CS3 makes the green light L G The light is incident on the photodiode group PD3A adjacent to the color separator CS2 (ie, adjacent to the photodiode group PD2A existing immediately below).

[0270] That is, in the second embodiment, the focused green light L G Light is incident on the photodiode group PD3A from a color separator area configured by the color separator CS3 directly above the photodiode group PD3A and a plurality of color separators CS1 and CS2 adjacent to the immediately upper color separator CS3 directly above the photodiode group PD3A.

[0271] Therefore, in the second embodiment, the photoelectric conversion green light L can be increased. G The sensitivity of the photodiode group PD3A.

[0272] As described above, in the second embodiment, by arranging the color separators CS1 to CS3 on the light incident side farther than the photodiode groups PD1A to PD3A, the sensitivity of the photodiode groups PD1A to PD3A can be improved.

[0273] Furthermore, in the second embodiment, two photodiodes PD1 belonging to the same photodiode group PD1A are configured as a photoelectric conversion portion capable of acquiring a phase difference on the image plane.

[0274] In this case, two photodiodes PD1 belonging to the same photodiode group PD1A share a color separator area within the same range configured by the color separator CS1 right above the two photodiodes PD1 and a plurality of color separators CS2 and CS3 adjacent to the color separator CS1 .

[0275] In the second embodiment, since the green light L focused by the color separator layer 50 R It is incident on the photodiode group PD1A, so it can increase the green light L R The detection sensitivity of the phase difference in .

[0276] Similarly, in the second embodiment, two photodiodes PD2 belonging to the same photodiode group PD2A are configured as a photoelectric conversion portion capable of acquiring a phase difference of an image plane.

[0277] In this case, two photodiodes PD2 belonging to the same photodiode group PD2A share a color separator area within the same range configured by the color separator CS2 right above the two photodiodes PD2 and the plurality of color separators CS1 and CS3 adjacent to the color separator CS2.

[0278] In the second embodiment, since the green light L focused by the color separator layer 50 is B It is incident on the photodiode group PD2A, so it can increase the green light L B The detection sensitivity of the phase difference in .

[0279] Likewise, in the second embodiment, two photodiodes PD3 belonging to the same photodiode group PD3A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0280] In this case, two photodiodes PD3 belonging to the same photodiode group PD3A share a color separator area in the same range configured by the color separator CS3 right above the two photodiodes PD3 and the plurality of color separators CS1 and CS2 adjacent to the color separator CS3.

[0281] In the second embodiment, since the green light L focused by the color separator layer 50 G It is incident on the photodiode group PD3A, so it can increase the green light L G The detection sensitivity of the phase difference in .

[0282] That is, in the second embodiment, since the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0283] In the second embodiment, since the photoelectric conversion unit 62 for photoelectrically converting infrared light is arranged on the light incident side closer to the semiconductor layer 20, in addition to information related to the three colors of RGB light reflected from the target object, information related to the infrared light reflected from the target object can also be obtained in the pixel area 3.

[0284] It should be noted that Figure 16 and Figure 17 In the example shown in FIG, an example is described in which the OCL layer 70 is provided at a position closest to the light incident side in the pixel region 3. However, the OCL layer 70 does not need to be provided at all times.

[0285] [Various Modifications of the Second Embodiment]

[0286] Next, refer to Figures 18 to 29 Various modifications of the second embodiment will be described. Figure 18 is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification example 1 of the second embodiment of the present disclosure, and is similar to that in the second embodiment. Figure 17 Corresponding diagram.

[0287] like Figure 18 As shown, in this modification example 1, the structure of the semiconductor layer 20 is different from that of the second embodiment. Specifically, in this modification example 1, the photodiode groups PD1A to PD3A are not provided in most pixels 2, and one photodiode PD1, one photodiode PD2, or one photodiode PD3 is provided in most pixels 2.

[0288] On the other hand, a photodiode PD2 is provided in a portion of the pixel 2, the light receiving area of ​​which is halved by the light shielding film 24 located on one side (for example, the left side). Similarly, a photodiode PD2 is provided in another portion of the pixel 2 near the portion of the pixel 2, the light receiving area of ​​which is halved by the light shielding film 24 located on the other side (for example, the right side).

[0289] One photodiode group PD2A is composed of the two photodiodes PD2 having half the area. In this modification 1, the two photodiodes PD2 belonging to the same photodiode group PD2A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0290] Therefore, the photoelectric conversion of green light L can be improved B The sensitivity of the photodiode group PD2A (see Figure 7 ). In addition, in this modification example 1, the green light L can be increased. B The detection sensitivity of the phase difference in .

[0291] It should be noted that Figure 18 In the example shown in , an example is described in which one photodiode group PD2A is configured by two photodiodes PD2, and the light receiving areas of the two photodiodes PD2 are halved. However, the present disclosure is not limited to this example.

[0292] For example, a photodiode group PD1A (see Figure 17 ) can be configured by two photodiodes PD1, the light receiving area of ​​the two photodiodes PD1 is halved, and the two photodiodes PD1 can be configured as a photoelectric conversion unit capable of acquiring a phase difference of an image plane. Therefore, the green light L can be improved. R The detection sensitivity of the phase difference in Figure 6 ).

[0293] Photodiode group PD3A (see Figure 17 ) can be configured by two photodiodes PD3, the light receiving area of ​​the two photodiodes PD3 is halved, and the two photodiodes PD3 can be configured as a photoelectric conversion unit capable of acquiring a phase difference of an image plane. Therefore, the green light L can be improved. G The detection sensitivity of the phase difference in Figure 5 ).

[0294] Figure 19 1 is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification 2 of the second embodiment of the present disclosure. Figure 19 As shown, in this modification 2, the configurations of the color separator layer 50 and the semiconductor layer 20 are different from those in the above-described second embodiment (see FIG. Figure 17 ).

[0295] In this modification 2, color separators CS1 to CS3 having an area of ​​two×two OCLs 71 are provided in the color separator layer 50. On the back side of the color separator CS1, two×two, ie, a total of four photodiodes PD1 are positioned.

[0296] One photodiode group PD1A is composed of four photodiodes PD1. In the second modification, the four photodiodes PD1 belonging to the same photodiode group PD1A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0297] In this case, four photodiodes PD1 belonging to the same photodiode group PD1A share a color separator area within the same range configured by the color separator CS1 immediately above the four photodiodes PD1 and a plurality of color separators CS2 and CS3 adjacent to the color separator CS1 .

[0298] In this modification 2, the green light L focused by the color separator layer 50 is R (See Figure 6 ) is incident on the photodiode group PD1A, thereby improving the green light L R The detection sensitivity of the phase difference in .

[0299] In this modification 2, a total of two×two (ie, four photodiodes PD2 ) are located on the back side of the color separator CS2 .

[0300] The four photodiodes PD2 constitute one photodiode group PD2A. In this modification 2, the four photodiodes PD2 belonging to the same photodiode group PD2A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0301] In this case, the four photodiodes PD2 belonging to the same photodiode group PD2A share a color separator area within the same range configured by the color separator CS2 right above the four photodiodes PD2 and the plurality of color separators CS1 and CS3 adjacent to the color separator CS2.

[0302] In this modification 2, the green light L focused by the color separator layer 50 is B (See Figure 7 ) is incident on the photodiode group PD2A, thereby increasing the green light L B The detection sensitivity of the phase difference in .

[0303] In this modification 2, two×two (ie, a total of four photodiodes PD3 ) are located on the back side of the color separator CS3 .

[0304] The four photodiodes PD3 constitute one photodiode group PD3A. In this modification 2, the four photodiodes PD3 belonging to the same photodiode group PD3A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0305] In this case, the four photodiodes PD3 belonging to the same photodiode group PD3A share the same range of color separator areas, including the color separator CS3 directly above the four photodiodes PD3 and the plurality of color separators CS1 and CS2 adjacent to the color separator CS3.

[0306] In this modification 2, the green light L focused by the color separator layer 50 is G (See Figure 5 ) is incident on the photodiode group PD3A, thereby increasing the green light L G The detection sensitivity of the phase difference in .

[0307] That is, in the present modification example 2, since the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0308] In this modification 2, since the photodiode groups PD1A to PD3A include two×two photodiodes PD1 to two×two photodiodes PD3 , respectively, the distance to the target object can be measured regardless of the texture direction and color of the target object.

[0309] Figure 20 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification example 3 of the second embodiment of the present disclosure. Figure 20 As shown, in this modification 3, the configurations of the color separator layer 50 and the semiconductor layer 20 are different from those in the above-described second embodiment (see FIG. Figure 17 ).

[0310] Specifically, in this modification 3, color separators CS1, CS2, and CS3 having an area of ​​two×one OCL 71 are provided in the color separator layer 50. Two×one, ie, a total of two photodiodes PD1 are located on the back side of the color separator CS1.

[0311] One photodiode group PD1A is composed of two photodiodes PD1. In the third modification, the two photodiodes PD1 belonging to the same photodiode group PD1A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0312] In this case, two photodiodes PD1 belonging to the same photodiode group PD1A share a color separator area within the same range configured by the color separator CS1 right above the two photodiodes PD1 and a plurality of color separators CS2 and CS3 adjacent to the color separator CS1 .

[0313] In this modification 3, the green light L focused by the color separator layer 50 R (See Figure 6 ) is incident on the photodiode group PD1A, so the green light L R The detection sensitivity of the phase difference in .

[0314] In the present modification example 3, two×one, that is, two photodiodes PD2 in total are located on the rear side of the color separator CS2.

[0315] The two photodiodes PD2 constitute one photodiode group PD2A. In this modification 3, the two photodiodes PD2 belonging to the same photodiode group PD2A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0316] In this case, two photodiodes PD2 belonging to the same photodiode group PD2A share a color separator area within the same range configured by the color separator CS2 right above the two photodiodes PD2 and the plurality of color separators CS1 and CS3 adjacent to the color separator CS2.

[0317] In this modification 3, the green light L focused by the color separator layer 50 is B (See Figure 7 ) is incident on the photodiode group PD2A, thereby increasing the green light L B The detection sensitivity of the phase difference in .

[0318] In the present modification example 3, two×one (ie, two photodiodes PD3 in total) are located on the back side of the color separator CS3.

[0319] The two photodiodes PD3 constitute one photodiode group PD3A. In this modification 3, the two photodiodes PD3 belonging to the same photodiode group PD3A are configured as photoelectric conversion units capable of acquiring a phase difference on the image plane.

[0320] In this case, two photodiodes PD3 belonging to the same photodiode group PD3A share a color separator area in the same range configured by the color separator CS3 right above the two photodiodes PD3 and the plurality of color separators CS1 and CS2 adjacent to the color separator CS3.

[0321] In this modification 3, the green light L focused by the color separator layer 50 is G (See Figure 5 ) is incident on the photodiode group PD3A, thereby increasing the green light L G The detection sensitivity of the phase difference in .

[0322] That is, in the present modification example 3, since the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0323] Figure 21 is a cross-sectional view schematically showing the structure of the pixel region 3 according to Modification 4 of the second embodiment of the present disclosure. Figure 17 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region 3 according to Modification 4 of the second embodiment of the present disclosure.

[0324] like Figure 21 As shown in FIG. 1 , in this modification 4, the stacking order of the layers is the same as that of the second embodiment (see FIG. Figure 16 ). Specifically, in the pixel region 3 of this modification example 4, the OCL layer 70, the color separator layer 50, the organic photoelectric conversion layer 60, the optical layer 40, the semiconductor layer 20, and the wiring layer 30 are stacked in this order from the light incident side. That is, in this modification example 4, the color separator layer 50 is located closer to the light incident side than the organic photoelectric conversion layer 60.

[0325] Therefore, by arranging the color separators CS1 to CS3 on the light incident side farther than the photodiode groups PD1A to PD3A, the sensitivity of the photodiode groups PD1A to PD3A can be improved.

[0326] Furthermore, in this modification 4, since the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0327] In this variant example 4, since the photoelectric conversion unit 62 for photoelectrically converting infrared light is arranged on the light incident side closer to the semiconductor layer 20, in addition to information related to the three colors of RGB light reflected from the target object, information related to the infrared light reflected from the target object can also be obtained in the pixel area 3.

[0328] It should be noted that in Figure 22 In the example shown in FIG, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configuration as that in the second embodiment explained above (see FIG. Figure 17 ). However, the present disclosure is not limited to this example. For example, Figure 22 In the example shown, the semiconductor layer 20 may have the same configuration as that of the above-described Modification 1 (see Figure 18 ).

[0329] exist Figure 22 In the example shown in FIG, the color separator layer 50 and the semiconductor layer 20 may have the same structure as in the above-described modification example 2 (see FIG. Figure 19 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-described modification 3 (see Figure 20 ) in the same construction.

[0330] exist Figures 18 to 22 In the illustrated example, an example is described in which the OCL layer 70 is provided at a position closest to the light incident side in the pixel region 3. However, the OCL layer 70 does not need to be provided at all times.

[0331] Figure 23 is a cross-sectional view schematically showing the structure of the pixel region 3 according to Modification 5 of the second embodiment of the present disclosure. Figure 24 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region 3 according to Modification 5 of the second embodiment of the present disclosure.

[0332] like Figure 23 and Figure 24 As shown, in this modification 5, the configuration of the organic photoelectric conversion layer 60 is different from that in the second embodiment explained above (see Figure 16 and Figure 17 Specifically, in the present modification example 5, two photoelectric conversion portions 62 are located on the back surface of one OCL 71 , and one photoelectric conversion portion group 62A is configured by these two photoelectric conversion portions 62 .

[0333] In Modification 5, two photoelectric converters 62 belonging to the same photoelectric converter group 62A are configured to obtain a phase difference on the image plane. In this case, the two photoelectric converters 62 belonging to the same photoelectric converter group 62A share the OCL 71 directly above the two photoelectric converters 62 .

[0334] In the present modification example 5, since the infrared light focused by the OCL 71 is incident on the photoelectric conversion portion group 62A, the detection sensitivity of the phase difference in the infrared light can be improved.

[0335] That is, in this modification example 5, since the OCL 71 and the color separator layer 50 can focus the three colors of RGB light and infrared light respectively, the detection sensitivity of the phase difference in the three colors of RGB light and infrared light can be improved.

[0336] Note that in Figure 24 In the illustrated example, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configurations as those in the second embodiment described above (see FIG. Figure 17 ). However, the present disclosure is not limited to this example. For example, Figure 24 In the example shown, the semiconductor layer 20 may have the same configuration as that of the above-described Modification 1 (see Figure 18).

[0337] exist Figure 24 In the example shown, the color separator layer 50 and the semiconductor layer 20 may have the same configuration as that of the above explained modification 2 (see Figure 19 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as those in the above-explained modification 3 (see Figure 20 ) in the same configuration.

[0338] Figure 25 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification example 6 of the second embodiment of the present disclosure. Figure 25 As shown, in this modification 6, the configuration of the organic photoelectric conversion layer 60 is different from that of the modification 5 of the second embodiment (see Figure 24 ) configuration.

[0339] Specifically, in the present modification example 6, the photoelectric conversion portion group 62A is not provided in most of the pixels 2 , and one photoelectric conversion portion 62 is provided in most of the pixels 2 .

[0340] On the other hand, the photoelectric conversion portion 62 whose light receiving area is halved by the light shielding film 64 located on one side (for example, the left side) is provided in a portion of the pixel 2. Similarly, the photoelectric conversion portion 62 whose light receiving area is halved by the light shielding film 64 located on the other side (for example, the right side) is provided in another portion of the pixel 2 close to the portion of the pixel 2.

[0341] One photoelectric conversion portion group 62A is composed of two photoelectric conversion portions 62 having a halved area. In Modification 6, two photoelectric conversion portions 62 belonging to the same photoelectric conversion portion group 62A are configured to obtain a phase difference on the image plane.

[0342] Here, in the present modification example 6, since the infrared light focused by the OCL 71 is incident on the photoelectric conversion unit group 62A, the detection sensitivity of the phase difference in the infrared light can be improved.

[0343] That is, in Modification 6, since the OCL 71 and the color separator layer 50 can focus the three colors of RGB light and infrared light, respectively, the detection sensitivity of the phase difference in the three colors of RGB light and infrared light can be improved.

[0344] It should be noted that in Figure 25 In the example shown in FIG, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configuration as that in the second embodiment explained above (see FIG. Figure 17 ). However, the present disclosure is not limited to this example. For example, Figure 25In the example shown in FIG, the semiconductor layer 20 may have the same configuration as in the above-described modification 1 (see FIG. Figure 18 ).

[0345] exist Figure 25 In the example shown in FIG, the color separator layer 50 and the semiconductor layer 20 may have the same structure as in the above-described modification example 2 (see FIG. Figure 19 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-described modification 3 (see Figure 20 ) in the same construction.

[0346] Figure 26 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification 7 of the second embodiment of the present disclosure. Figure 26 As shown, in this modification 7, the configuration of the OCL layer 70 and the organic photoelectric conversion layer 60 is different from that in the modification 5 of the second embodiment (see Figure 24 ).

[0347] Specifically, in this modification 7, a plurality of OCLs 71A (see FIG. Figure 16 ) are arranged side by side in a matrix in the OCL layer 70. Two×two, that is, a total of four photoelectric conversion portions 62 are located on the rear side of one OCL 71A.

[0348] One photoelectric converter group 62A is composed of four photoelectric converters 62. Furthermore, in Modification 7, the four photoelectric converters 62 belonging to the same photoelectric converter group 62A are configured to obtain a phase difference on the image plane. In this case, the four photoelectric converters 62 belonging to the same photoelectric converter group 62A share an OCL 71A located immediately above the four photoelectric converters 62.

[0349] In the present modification 7, since the infrared light focused by the OCL 71A is incident on the photoelectric conversion unit group 62A, the detection sensitivity of the phase difference in the infrared light can be improved.

[0350] That is, in this modification example 7, since the OCL 71A and the color separator layer 50 can focus the three colors of RGB light and infrared light, respectively, the detection sensitivity of the phase difference in the three colors of RGB light and infrared light can be improved.

[0351] It should be noted that in Figure 26 In the example shown in FIG, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configuration as that in the second embodiment explained above (see FIG. Figure 17 ). However, the present disclosure is not limited to this example. For example, Figure 26In the example shown, the semiconductor layer 20 may have the same configuration as in the above-described Modification 1 (see Figure 18 ).

[0352] exist Figure 26 In the example shown in FIG, the color separator layer 50 and the semiconductor layer 20 may have the same structure as in the above-described modification example 2 (see FIG. Figure 19 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-described modification 3 (see Figure 20 ) in the same construction.

[0353] Figure 27 : is a diagram for explaining the stacking structure and planar structure of the pixel region 3 according to the modification 8 of the second embodiment of the present disclosure. Figure 27 As shown, in this modification 8, the configuration of the OCL layer 70 is different from the configuration of the OCL layer 70 in the above-mentioned second embodiment.

[0354] Specifically, in this modification 8, a semi-ellipsoidal surface OCL 71B having an area of ​​two pixels x one pixel 2 (see Figure 16 ) is provided in a portion of the OCL layer 70. Two×one, that is, a total of two photoelectric conversion units 62 are located on the back side of the OCL 71B.

[0355] One photoelectric converter group 62A is composed of two photoelectric converters 62. Furthermore, in Modification Example 8, the two photoelectric converters 62 belonging to the same photoelectric converter group 62A are configured to be able to obtain a phase difference on the image plane. In this case, the two photoelectric converters 62 belonging to the same photoelectric converter group 62A share the OCL 71B directly above the two photoelectric converters 62.

[0356] In the present modification 8, since the infrared light focused by the OCL 71B is incident on the photoelectric conversion portion group 62A, the detection sensitivity of the phase difference in the infrared light can be improved.

[0357] That is, in this modification example 8, since the OCL 71B and the color separator layer 50 can focus the three colors of RGB light and infrared light, respectively, the detection sensitivity of the phase difference in the three colors of RGB light and infrared light can be improved.

[0358] It should be noted that in Figure 27 In the example shown in FIG, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configuration as that in the second embodiment described above (see FIG. Figure 17 ). However, the present disclosure is not limited to this example. For example, Figure 27 In the example shown in FIG, the semiconductor layer 20 may have the same configuration as in the above-described modification 1 (see FIG. Figure 18 ).

[0359] exist Figure 27 In the example shown in FIG, the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-explained modification 2 (see FIG. Figure 19 ), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as those in the above-explained modification example 3 (see Figure 20 ) in the same configuration.

[0360] Figure 28 is a cross-sectional view schematically showing the structure of the pixel region 3 according to Modification 9 of the second embodiment of the present disclosure. Figure 29 1 and 2 are diagrams for explaining a stacked structure and a planar structure of a pixel region 3 according to Modification Example 9 of the second embodiment of the present disclosure.

[0361] like Figure 28 As shown in the example 9, the stacking order of the layers is the same as that of the above-mentioned example 5 (see Figure 23 Specifically, in the pixel region 3 of Modification 9, the OCL layer 70, the color separator layer 50, the organic photoelectric conversion layer 60, the optical layer 40, the semiconductor layer 20, and the wiring layer 30 are stacked in this order from the light incident side. That is, in Modification 9, the color separator layer 50 is located closer to the light incident side than the organic photoelectric conversion layer 60.

[0362] Therefore, by arranging the color separators CS1 to CS3 on the light incident side farther than the photodiode groups PD1A to PD3A, the sensitivity of the photodiode groups PD1A to PD3A can be improved.

[0363] Furthermore, in this modification 9, since the OCL 71 and the color separator layer 50 can focus the three colors of RGB light and infrared light respectively, the detection sensitivity of the phase difference between the three colors of RGB light and infrared light can be improved.

[0364] It should be noted that in Figure 29 In the example shown in FIG, an example is described in which the color separator layer 50 and the semiconductor layer 20 have the same configuration as that in the second embodiment explained above (see FIG. Figure 17 ). However, the present disclosure is not limited to this example. For example, Figure 29 In the example shown in FIG, the semiconductor layer 20 may have the same configuration as in the above-described modification 1 (see FIG. Figure 18 ).

[0365] exist Figure 29 In the example shown in FIG, the color separator layer 50 and the semiconductor layer 20 may have the same configuration as in the above-explained modification 2 (see FIG. Figure 19), and the color separator layer 50 and the semiconductor layer 20 may have the same configuration as those in the above-explained modification example 3 (see Figure 20 ) in the same configuration.

[0366] [Third embodiment]

[0367] Figure 30 3 is a diagram for explaining the stacked structure and planar structure of the pixel region 3 according to the third embodiment of the present disclosure. Figure 30 As shown, the basic layer structure of the third embodiment is similar to that of the modified example 4 of the first embodiment (see Figure 12 ) has the same basic layer structure.

[0368] In the third embodiment, the division direction of the two photodiodes PD1 in the photodiode group PD1A in the semiconductor layer 20 and the division direction of the two photoelectric converters 62 in the photoelectric converter group 62A in the organic photoelectric conversion layer 60 intersect with each other.

[0369] Similarly, in the third embodiment, the division direction of the two photodiodes PD2 in the photodiode group PD2A in the semiconductor layer 20 and the division direction of the two photoelectric converters 62 in the photoelectric converter group 62A in the organic photoelectric conversion layer 60 intersect with each other.

[0370] For example, in Figure 30 In the illustrated example, all the photodiode groups PD1A and all the photodiode groups PD2A are divided in the longitudinal direction, and all the photoelectric conversion portion groups 62A are divided in the lateral direction.

[0371] Therefore, since the pixel area 3 can be given the same conditions as two × two photoelectric conversion units sharing the optical system are located in one pixel 2 (see FIG. Figure 11 ) so the distance to a target object can be measured regardless of its texture orientation or color.

[0372] In the third embodiment, since the pixel size can be increased compared with the case where two×two pixels 2 share the optical system, pixel performance such as sensitivity can be improved.

[0373] exist Figure 30 In the illustrated example, an example is described in which all the photodiode groups PD1A and PD2A are divided in the longitudinal direction and all the photoelectric conversion unit groups 62A are divided in the lateral direction. However, the present disclosure is not limited to this example.

[0374] Figure 31 : is a diagram for explaining the stacked structure and planar structure of the pixel region 3 according to the modification 1 of the third embodiment of the present disclosure. Figure 31 As shown, in this modification 1, the division direction of all the photodiode groups PD1A is different from the division direction of all the photodiode groups PD2A.

[0375] For example, in Figure 31 In the example shown in , all the photodiode groups PD1A are divided in the lateral direction and all the photodiode groups PD2A are divided in the longitudinal direction.

[0376] In this modification example 1, the division direction of the photoelectric conversion unit group 62A located directly above the photodiode group PD1A is different from the division direction of the photodiode group PD1A. Similarly, in this modification example 1, the division direction of the photoelectric conversion unit group 62A located directly above the photodiode group PD2A is different from the division direction of the photodiode group PD2A.

[0377] For example, in Figure 31 In the illustrated example, the photoelectric conversion portion group 62A located immediately above the photodiode group PD1A is divided in the longitudinal direction, and the photoelectric conversion portion group 62A located immediately above the photodiode group PD2A is divided in the lateral direction.

[0378] Therefore, since two × two photoelectric conversion units sharing the optical system are located in one pixel 2 (see Figure 11 ) The same function as in the case of ) can be assigned to pixel area 3, so the distance to the target object can be measured regardless of the texture direction or color of the object.

[0379] In this modification example 1, the pixel size can be increased compared to the case where two×two pixels 2 share the optical system. Therefore, pixel performance such as sensitivity can be improved.

[0380] Figure 32 : is a diagram for explaining the stacked structure and planar structure of the pixel region 3 according to the second modification of the third embodiment of the present disclosure. Figure 32 As shown in (b) of FIG. 1 , in the present modification 2, the photoelectric conversion unit group 62A is divided into upper and lower two×two pixel 2 regions (see FIG. 1 ). Figure 11 ) and the photoelectric conversion portion group 62A is divided into two×two pixel 2 regions on the left and right sides and arranged side by side in a checkered pattern.

[0381] In this modification 2, if Figure 32 As shown in (d) of FIG. 5 , the division direction of the photodiode group PD1A and PD2A located on the back side of the photoelectric conversion portion group 62A is different from the division direction of the photoelectric conversion portion group 62A.

[0382] For example, in Figure 32In the example shown, the photodiode groups PD1A and PD2A located on the back side of the photoelectric conversion portion group 62A divided in the lateral direction are divided in the longitudinal direction. Figure 32 In the illustrated example, the photodiode groups PD1A and PD2A located on the back side of the photoelectric conversion portion group 62A divided in the longitudinal direction are divided in the lateral direction.

[0383] Therefore, since the same function as that in the case where two×two photoelectric conversion portions sharing an optical system are located in one pixel 2 can be given to the pixel area 3, the distance to the target object can be measured regardless of the texture direction or color of the target object.

[0384] In this modification 2, since the pixel size can be increased compared to the case where two×2 pixels 2 share an optical system, pixel performance such as sensitivity can be improved.

[0385] In this modification 2, Figure 32 In the area A of two×two pixels 2 shown in (d), the two photodiode groups PD1A are divided in the longitudinal direction and the lateral direction, respectively, and the two photodiode groups PD2A are divided in the longitudinal direction and the lateral direction.

[0386] Therefore, when the pixels 2 are thinned and subjected to signal processing, the distance to the target object can be measured based on all three RGB colors regardless of the texture direction and color of the target object.

[0387] [Fourth embodiment]

[0388] Next, refer to Figure 33 and Figure 34 The detailed structure of the pixel region 3 according to the fourth embodiment will be described. Figure 33 is a cross-sectional view schematically showing the structure of the pixel region 3 according to the fourth embodiment of the present disclosure. Figure 34 4 are diagrams for explaining a stacked structure and a planar structure of a pixel region 3 according to a fourth embodiment of the present disclosure.

[0389] The pixel region 3 in the fourth embodiment includes a semiconductor layer 120, a wiring layer 30, an optical layer 40, a color separator layer 50, an organic photoelectric conversion layer 160, and an OCL layer 70. The semiconductor layer 120 is an example of another photoelectric conversion layer, and the organic photoelectric conversion layer 160 is an example of a photoelectric conversion layer.

[0390] In the pixel region 3 , the OCL layer 70 , the color separator layer 50 , the buffer layer 42 of the optical layer 40 , the organic photoelectric conversion layer 160 , the color filter 41 of the optical layer 40 , the semiconductor layer 120 , and the wiring layer 30 are stacked in order from the light incident side.

[0391] The semiconductor layer 120 includes a semiconductor region 121 of a first conductivity type (e.g., P-type), a semiconductor region 122 of a second conductivity type (e.g., N-type), and a separator 123. The first conductivity type semiconductor region 121 and the second conductivity type semiconductor region 122 are formed side by side in a planar direction (the array direction of the pixels 2) on a pixel-by-pixel basis. As a result, photodiodes PD4 are formed side by side in the planar direction via PN junctions. The photodiode PD4 is an example of another photoelectric conversion unit and a fourth photoelectric conversion unit.

[0392] For example, the photodiode PD4 is a photoelectric conversion unit that receives and photoelectrically converts light in the infrared region. That is, in the fourth embodiment, the semiconductor layer 120 photoelectrically converts infrared light.

[0393] In a fourth embodiment, if Figure 34 As shown in (d), the photodiode group PD4A is configured by two photodiodes PD4 adjacent to each other. The photodiode group PD4A is an example of another photoelectric conversion unit group. For example, the photodiode group PD4A is for each pixel 2 in the pixel area 3 (see Figure 33 ) are formed individually.

[0394] Return Reference Figure 33 The separation portion 123 of the semiconductor layer 120 electrically and optically separates the adjacent photodiodes PD4 from each other. Note that in the present disclosure, the photodiodes PD4 belonging to the same photodiode group PD4A may be electrically connected to each other through an overflow path.

[0395] The color filter 41 of the optical layer 40 is located on the light incident side surface of the semiconductor layer 120. The color filter 41 is an optical filter that transmits light in a predetermined wavelength region of the incident light L. In the fourth embodiment, the color filter 41 is composed of a color filter 41IR that transmits infrared light.

[0396] The organic photoelectric conversion layer 160 is provided on the surface on the light incident side in the color filter 41. The organic photoelectric conversion layer 160 includes an interlayer insulating film 161 and a photoelectric conversion unit 162. Since the configuration of the photoelectric conversion unit 162 is the same as that in the second embodiment and the like described above, a detailed description of the film configuration is omitted.

[0397] In the fourth embodiment, the photoelectric conversion unit 162 includes a photoelectric conversion unit 1621 and a photoelectric conversion unit 1622 (see Figure 34 ) and the photoelectric conversion portion 1623. The photoelectric conversion portion 1621 is an example of a first photoelectric conversion portion, the photoelectric conversion portion 1622 is an example of a second photoelectric conversion portion, and the photoelectric conversion portion 1623 is an example of a third photoelectric conversion portion.

[0398] For example, photoelectric conversion section 1621 receives and photoelectrically converts light in the red region. Photoelectric conversion section 1622 receives and photoelectrically converts light in the blue region. Photoelectric conversion section 1623 receives and photoelectrically converts light in the green region. In other words, in the fourth embodiment, the organic photoelectric conversion layer 160 performs photoelectric conversion on the three colors of light, RGB.

[0399] In a fourth embodiment, if Figure 34 As shown in (c), the photoelectric conversion unit group 1621A is composed of two adjacent photoelectric conversion units 1621. The photoelectric conversion unit group 1622A is composed of two adjacent photoelectric conversion units 1622. The photoelectric conversion unit group 1623A is composed of two adjacent photoelectric conversion units 1623.

[0400] In the organic photoelectric conversion layer 160, for example, a plurality of photoelectric conversion unit groups 1621A, a plurality of photoelectric conversion unit groups 1622A, and a plurality of photoelectric conversion unit groups 1623A are arranged in a so-called Bayer array. The photoelectric conversion unit group 1621A, the photoelectric conversion unit group 1622A, or the photoelectric conversion unit group 1623A is arranged for each pixel 2 in the pixel region 3 (see FIG. Figure 33 ) are formed individually.

[0401] Return Reference Figure 33 The buffer layer 42 of the optical layer 40 is provided on the surface of the light incident side in the organic photoelectric conversion layer 160. The color separator layer 50 is provided on the surface of the light incident side in the buffer layer 42. The color separator layer 50 includes a low refractive index portion 51 (see Figure 2 ), high refractive index portion 52 (see Figure 2 ), high refractive index portion 53 (see Figure 2 ) and the high refractive index portion 54 (see Figure 16 ).

[0402] The high refractive index portions 52, 53, and 54 are made of a material having a higher refractive index than the low refractive index portion 51. The high refractive index portion 52 has a predetermined planar shape inside the color separator layer 50 and is provided on the light incident side of the photoelectric conversion portion group 1621A. On the light incident side of the photoelectric conversion portion group 1621A, the color separator CS1 is configured by the low refractive index portion 51 and the high refractive index portion 52.

[0403] The high refractive index portion 53 has a predetermined planar shape inside the color separator layer 50 and is provided on the light incident side of the photoelectric conversion portion group 1622A. On the light incident side of the photoelectric conversion portion group 1622A, the color separator CS2 (see Figure 34 ) is configured by a low refractive index portion 51 and a high refractive index portion 53.

[0404] The high refractive index portion 54 has a predetermined planar shape inside the color separator layer 50 and is provided on the light incident side of the photoelectric conversion portion group 1623A. On the light incident side of the photoelectric conversion portion group 1623A, the color separator CS3 is configured by the low refractive index portion 51 and the high refractive index portion 54.

[0405] For example, for each pixel 2 in the pixel area 3 (see Figure 2 ) separately forms a color separator CS1, a color separator CS2 or a color separator CS3.

[0406] Then, in the fourth embodiment, the color separator CS1 of the color separator layer 50 makes the green light L R (See Figure 6 ) is incident on the photoelectric conversion unit group 1621A near the color separator CS1 (ie, exists directly below).

[0407] The color separator CS2 adjacent to the color separator CS1 makes the green light L R The light is incident on the photoelectric conversion unit group 1621A adjacent to the color separator CS2 (ie, adjacent to the photoelectric conversion unit group 1622A existing immediately below).

[0408] In addition, the color separator CS3 adjacent to the color separator CS1 makes the green light L R The light is incident on the photoelectric conversion unit group 1621A adjacent to the color separator CS3 (ie, adjacent to the photoelectric conversion unit group 1623A existing immediately below).

[0409] That is, in the fourth embodiment, the focused green light L R Light is incident on the photoelectric conversion portion group 1621A from a color separator region configured by the color separator CS1 directly above the photoelectric conversion portion group 1621A and a plurality of color separators CS2 and CS3 adjacent to the color separator CS1 directly above.

[0410] Therefore, in the fourth embodiment, the photoelectric conversion of green light L can be improved. R The sensitivity of the photoelectric conversion unit group 1621A.

[0411] In the fourth embodiment, the color separator CS2 of the color separator layer 50 makes the green light L B (See Figure 7 ) is incident on the photoelectric conversion portion group 1622A near (ie, immediately below) the color separator CS2.

[0412] The color separator CS1 adjacent to the color separator CS2 makes the green light L BThe light is incident on the photoelectric conversion unit group 1622A adjacent to the color separator CS1 (ie, adjacent to the photoelectric conversion unit group 1621A existing immediately below).

[0413] In addition, the color separator CS3 adjacent to the color separator CS2 makes the green light L B The light is incident on the photoelectric conversion unit group 1622A adjacent to the color separator CS3 (ie, adjacent to the photoelectric conversion unit group 1623A existing immediately below).

[0414] That is, in the fourth embodiment, the focused green light L B Light is incident on the photoelectric conversion portion group 1622A from a color separator region configured by the color separator CS2 immediately above the photoelectric conversion portion group 1622A and a plurality of color separators CS1 and CS3 adjacent to the color separator CS2 immediately above.

[0415] Therefore, in the fourth embodiment, the photoelectric conversion of green light L can be improved. B The sensitivity of the photoelectric conversion unit group 1622A.

[0416] In the fourth embodiment, the color separator CS3 of the color separator layer 50 makes the green light L G (See Figure 5 ) is incident on the photoelectric conversion unit group 1623A near the color separator CS3 (ie, directly below).

[0417] The color separator CS1 adjacent to the color separator CS3 makes the green light L G The light is incident on the photoelectric conversion portion group 1623A adjacent to the color separator CS1 (ie, adjacent to the photoelectric conversion portion group 1621A existing immediately below).

[0418] In addition, the color separator CS2 adjacent to the color separator CS3 makes the green light L G The light is incident on the photoelectric conversion unit group 1623A adjacent to the color separator CS2 (ie, adjacent to the photoelectric conversion unit group 1622A existing immediately below).

[0419] That is, in the fourth embodiment, the focused green light L G Light is incident on the photoelectric conversion portion group 1623A from a color separator region configured by the color separator CS3 immediately above the photoelectric conversion portion group 1623A and a plurality of color separators CS1 and CS2 adjacent to the color separator CS3 immediately above.

[0420] Therefore, in the fourth embodiment, the photoelectric conversion of green light L can be improved. G The sensitivity of the photoelectric conversion unit group 1623A.

[0421] As described above, in the fourth embodiment, by providing the color separators CS1 to CS3 on the light incident side relative to the photoelectric conversion unit groups 1621A to 1623A, the sensitivity of the photoelectric conversion unit groups 1621A to 1623A can be improved.

[0422] Furthermore, in the fourth embodiment, two photoelectric conversion portions 1621 belonging to the same photoelectric conversion portion group 1621A are configured as photoelectric conversion portions capable of obtaining a phase difference on the image plane.

[0423] In this case, two photoelectric converters 1621 belonging to the same photoelectric converter group 1621A share a color separator area within the same range configured by a color separator CS1 immediately above the two photoelectric converters 1621 and a plurality of color separators CS2 and CS3 adjacent to the color separator CS1.

[0424] In the fourth embodiment, the green light L focused by the color separator layer 50 is R The green light L is incident on the photoelectric conversion unit group 1621A, thereby increasing the R The detection sensitivity of the phase difference in .

[0425] Similarly, in the fourth embodiment, two photoelectric conversion portions 1622 belonging to the same photoelectric conversion portion group 1622A are configured as photoelectric conversion portions capable of acquiring a phase difference in an image plane.

[0426] In this case, two photoelectric converters 1622 belonging to the same photoelectric converter group 1622A share a color separator area within the same range configured by a color separator CS2 immediately above the two photoelectric converters 1622 and a plurality of color separators CS1 and CS3 adjacent to this color separator CS2.

[0427] In the fourth embodiment, the green light L focused by the color separator layer 50 is B The green light L is incident on the photoelectric conversion unit group 1622A, thereby increasing the B The detection sensitivity of the phase difference in .

[0428] Similarly, in the fourth embodiment, two photoelectric conversion portions 1623 belonging to the same photoelectric conversion portion group 1623A are configured as photoelectric conversion portions capable of acquiring a phase difference in an image plane.

[0429] In this case, two photoelectric converters 1623 belonging to the same photoelectric converter group 1623A share a color separator area within the same range configured by a color separator CS3 immediately above the two photoelectric converters 1623 and a plurality of color separators CS1 and CS2 adjacent to this color separator CS3.

[0430] In the fourth embodiment, the green light L focused by the color separator layer 50 is G The green light L is incident on the photoelectric conversion unit group 1623A, so the green light L G The detection sensitivity of the phase difference in .

[0431] That is, in the fourth embodiment, since the color separator layer 50 can focus all three colors of light, RGB, respectively, it is possible to improve the detection sensitivity of the phase difference in all three colors of light, RGB.

[0432] In the fourth embodiment, since the photodiode PD4 for photoelectrically converting infrared light is arranged at a rear side of the organic photoelectric conversion layer 160, in addition to information about the three colors of RGB light reflected from the target object, information about the infrared light reflected from the target object can also be obtained in the pixel area 3.

[0433] In the fourth embodiment, since the photodiode group PD4A is provided in the semiconductor layer 120 , the phase difference of the image plane of the three colors of RGB and infrared light can be obtained.

[0434] [Effect]

[0435] The photodetection device 1 according to this embodiment includes a photoelectric conversion layer (semiconductor layer 20 and organic photoelectric conversion layer 160) and a color separator layer 50. The photoelectric conversion layer (semiconductor layer 20 or organic photoelectric conversion layer 160) includes a photoelectric conversion unit group (photodiode groups PD1A to PD3A or photoelectric conversion unit groups 1621A to 1623A) configured from a plurality of photoelectric conversion units (photodiodes PD1 to PD3 or photoelectric conversion units 1621 to 1623) capable of detecting phase differences between incident light beams incident thereon. The color separator layer 50 is located on the light incident side of the photoelectric conversion layer (semiconductor layer 20 or organic photoelectric conversion layer 160) and has a metasurface structure.

[0436] Therefore, the photodetection device 1 can improve the detection sensitivity of the phase difference.

[0437] In the photodetection device 1 of this embodiment, the photoelectric converter group (photodiode groups PD1A to PD3A or photoelectric converter groups 1621A to 1623A) is composed of two photoelectric converters (photodiodes PD1 to PD3 or photoelectric converters 1621 to 1623).

[0438] Therefore, the distance to the target object can be measured.

[0439] In the photodetection device 1 according to the present embodiment, the photoelectric conversion unit group (photodiode groups PD1A to PD3A or photoelectric conversion unit groups 1621A to 1623A) is configured by four photoelectric conversion units (photodiodes PD1 to PD3 or photoelectric conversion units 1621 to 1623).

[0440] Therefore, the distance to the target object can be measured.

[0441] The photodetection device 1 according to this embodiment further includes another photoelectric conversion layer (organic photoelectric conversion layer 60 ) located on the light incident side of the photoelectric conversion layer (semiconductor layer 20 ) and including a plurality of other photoelectric conversion sections (photoelectric conversion sections 62 ).

[0442] Therefore, in the pixel area 3 , information on light in a wider range of wavelengths reflected from the subject can be acquired.

[0443] In the photoelectric detection device 1 according to the present embodiment, another photoelectric conversion layer (organic photoelectric conversion layer 60) includes another photoelectric conversion unit group (photoelectric conversion unit group 62A), which includes a plurality of other photoelectric conversion units (photoelectric conversion units 62) capable of detecting the phase difference between incident light beams incident thereon.

[0444] Therefore, the phase difference at the image plane can be obtained in light of more wavelength regions reflected from the target object.

[0445] In the photodetection device 1 according to the present embodiment, another photoelectric conversion portion group (photoelectric conversion portion group 62A) is constituted by two other photoelectric conversion portions (photoelectric conversion portions 62 ).

[0446] Therefore, the distance to the target object can be measured.

[0447] In the photodetection device 1 according to the present embodiment, the other photoelectric conversion portion group (photoelectric conversion portion group 62A) is composed of four different photoelectric conversion portions (photoelectric conversion portions 62 ).

[0448] Therefore, the distance to the target object can be measured.

[0449] In the photodetection device 1 according to the present embodiment, the other photoelectric conversion layer (organic photoelectric conversion layer 60 ) is located on the light incident side of the color separator layer 50 .

[0450] Therefore, it is possible to suppress the occurrence of color mixing in the color separator layer 50 and the semiconductor layer 20 .

[0451] In the photodetection device 1 according to the present embodiment, the color separator layer 50 is located on the light incident side relative to the other photoelectric conversion layer (organic photoelectric conversion layer 60 ).

[0452] Therefore, the occurrence of color mixing in the semiconductor layer 20 can be suppressed.

[0453] In the photodetection device 1 according to the present embodiment, the photoelectric conversion layer (semiconductor layer 20) includes a first photoelectric conversion portion (photodiode PD1) and a second photoelectric conversion portion (photodiode PD2). The first photoelectric conversion portion (photodiode PD1) photoelectrically converts light in a first wavelength region in the visible region (green light L R The second photoelectric conversion unit (photodiode PD2) photoelectrically converts light in the second wavelength region of the visible region (green light L B ). In addition, another photoelectric conversion layer (organic photoelectric conversion layer 60) includes a photoelectric conversion layer that converts light in the third wavelength region (green light L G ) of the third photoelectric conversion unit (photoelectric conversion unit 62).

[0454] Therefore, in the pixel area 3 , information on the light of three colors RGB reflected from the subject can be acquired.

[0455] In the photodetection device 1 according to the present embodiment, the photoelectric conversion layer (semiconductor layer 20) includes a first photoelectric conversion portion (photodiode PD1), a second photoelectric conversion portion (photodiode PD2), and a third photoelectric conversion portion (photodiode PD3). The first photoelectric conversion portion (photodiode PD1) photoelectrically converts light in the first wavelength region of the visible region (green light L R The second photoelectric conversion unit (photodiode PD2) photoelectrically converts light in the second wavelength region of the visible region (green light L B The third photoelectric conversion unit (photodiode PD3) photoelectrically converts light in the third wavelength region of the visible region (green light L G The other photoelectric conversion layer (organic photoelectric conversion layer 60 ) includes a fourth photoelectric conversion portion (photoelectric conversion portion 62 ) that photoelectrically converts light in a fourth wavelength region, which is an infrared region.

[0456] Therefore, in the pixel area 3 , information on the three colors of light, RGB, and infrared light reflected from the target object can be obtained.

[0457] The photodetection device 1 according to this embodiment further includes another photoelectric conversion layer (semiconductor layer 120 ) located on the side opposite to the light incident side of the photoelectric conversion layer (organic photoelectric conversion layer 160 ) and including a plurality of other photoelectric conversion sections (photodiodes PD4 ).

[0458] Therefore, in the pixel area 3 , information on light in a wider range of wavelengths reflected from the subject can be acquired.

[0459] In the photodetection device 1 according to this embodiment, the photoelectric conversion layer (organic photoelectric conversion layer 160) includes a first photoelectric conversion section (photoelectric conversion section 1621), a second photoelectric conversion section (photoelectric conversion section 1622), and a third photoelectric conversion section (photoelectric conversion section 1623). The first photoelectric conversion section (photoelectric conversion section 1621) photoelectrically converts light in a first wavelength region in the visible region. The second photoelectric conversion section (photoelectric conversion section 1622) photoelectrically converts light in a second wavelength region in the visible region. The third photoelectric conversion section (photoelectric conversion section 1623) photoelectrically converts light in a third wavelength region in the visible region. Another photoelectric conversion layer (semiconductor layer 120) includes a fourth photoelectric conversion section (photodiode PD4) that photoelectrically converts light in a fourth wavelength region in the infrared region.

[0460] Therefore, in the pixel area 3 , information on the three colors of light, RGB, and infrared light reflected from the target object can be obtained.

[0461] The photodetection device 1 according to this embodiment includes a photoelectric conversion layer (semiconductor layer 20), a color separator layer 50, and another photoelectric conversion layer (organic photoelectric conversion layer 60). The photoelectric conversion layer (semiconductor layer 20) includes a photoelectric conversion unit group (photodiode group PD1A or PD2A) including two photoelectric conversion units (photodiode PD1 or PD2) capable of detecting the phase difference between incident light beams incident thereon. The color separator layer 50 is located closer to the light incident side than the photoelectric conversion layer (semiconductor layer 20) and has a metasurface structure. The other photoelectric conversion layer (organic photoelectric conversion layer 60) includes another photoelectric conversion unit group (photoelectric conversion unit group 62A) located closer to the light incident side than the photoelectric conversion layer (semiconductor layer 20) and configured with two other photoelectric conversion units (photoelectric conversion units 62) capable of detecting the phase difference between incident light beams incident thereon. The division direction of the photoelectric converter group (photodiode group PD1A or PD2A) and the division direction of another photoelectric converter group (photoelectric converter group 62A) corresponding to the photoelectric converter group (photodiode group PD1A or PD2A) intersect with each other.

[0462] Therefore, the distance to the target object can be measured regardless of the texture direction and color of the target object.

[0463] [Electronic equipment]

[0464] The photodetection device 1 described above can be applied to various electronic devices such as imaging systems such as digital cameras and digital video cameras, mobile phones with imaging functions, and other devices with imaging functions.

[0465] Figure 35 is a block diagram showing a configuration example of the electronic device 101 .

[0466] like Figure 35 As shown, the electronic device 101 includes an optical system 102, a photodetection device 103 and a DSP (digital signal processor) 104, and is configured by connecting the DSP 104, a display device 105, an operating system 106, a memory 108, a recording device 109 and a power supply system 110 via a bus 107, and the electronic device 101 is capable of capturing still images and moving images.

[0467] The optical system 102 includes one or more lenses, guides image light (incident light) of a subject from the photodetection device 103 , and forms an image on a light receiving surface (sensor portion) of the photodetection device 103 .

[0468] The photodetection device 1 of any of the above-described configuration examples is used as the photodetection device 103. In the photodetection device 103, electrons are stored for a predetermined period of time based on the image formed on the light-receiving surface via the optical system 102. A signal corresponding to the electrons stored in the photodetection device 103 is then supplied to the DSP 104.

[0469] The DSP 104 applies various signal processing to the signal from the photodetection device 103 to acquire an image and temporarily stores the image data in the memory 108. The image data stored in the memory 108 is recorded in the recording device 109 or provided to the display device 105 to display the image. The operating system 106 receives various user operations and provides operation signals to the blocks of the electronic device 101. The power supply system 110 supplies the power required to drive the blocks of the electronic device 101.

[0470] In the electronic device 101 configured as described above, by applying the above-described photodetection device 1 as the photodetection device 103 , the detection sensitivity of the phase difference can be improved.

[0471] [Application examples of mobile objects]

[0472] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure can be implemented as a device installed on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, an unmanned aerial vehicle, a ship, and a robot.

[0473] Figure 36 : is a block diagram showing an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present disclosure can be applied.

[0474] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Figure 36 In the illustrated example, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an exterior information detection unit 12030, an interior information detection unit 12040, and an integrated control unit 12050. Furthermore, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown as functional components of the integrated control unit 12050.

[0475] Drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, drive system control unit 12010 functions as a control device to control: a drive force generating device, such as an internal combustion engine or a drive motor, for generating the vehicle's drive force; a drive force transmission mechanism for transmitting the drive force to the wheels; a steering mechanism for adjusting the vehicle's steering angle; and a braking device for generating the vehicle's braking force.

[0476] The body system control unit 12020 controls the operation of various types of equipment installed on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device to control the following: the keyless entry system, the smart key system, the power windows, or various lights such as the headlights, backup lights, brake lights, turn signals, and fog lights. In this case, the body system control unit 12020 can receive radio waves transmitted from a mobile device that replaces the key, or signals from various switches as input. The body system control unit 12020 receives these input radio waves or signals to control the vehicle's door locks, power windows, lights, and other devices.

[0477] The vehicle exterior information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the imaging unit 12031. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to image the exterior of the vehicle and receives the imaged image. Based on the received image, the vehicle exterior information detection unit 12030 can detect an object (such as a person, vehicle, obstacle, sign, symbol, etc. on the road) or detect the distance to the object.

[0478] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as information about the measured distance. The light received by the imaging unit 12031 can be visible light or invisible light such as infrared light.

[0479] The in-vehicle information detection unit 12040 detects information about the vehicle interior. A driver status detection unit 12041 may be connected to the in-vehicle information detection unit 12040 to detect the driver's condition. Driver status detection unit 12041 may include, for example, a camera that captures the driver's image. Based on the detection information input from driver status detection unit 12041, in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, or determine whether the driver is dozing off.

[0480] The microcomputer 12051 can calculate control target values ​​for the driving force generation device, the steering mechanism, or the braking device based on information about the interior or exterior of the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control to implement functions of an advanced driver assistance system (ADAS), including collision avoidance or impact cushioning for the vehicle, following driving based on vehicle-to-vehicle distance, speed maintenance driving, vehicle collision warnings, vehicle lane departure warnings, and the like.

[0481] In addition, the microcomputer 12051 can control the driving force generating device, steering mechanism, braking device based on information about the outside or inside of the vehicle obtained by the outside information detection unit 12030 or the inside information detection unit 12040, thereby performing collaborative control intended for automatic driving, etc. that is not dependent on the driver's operation.

[0482] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on information about the exterior of the vehicle obtained by the exterior information detection unit 12030. For example, the microcomputer 12051 can control the headlights to change from high beam to low beam based on the position of a preceding vehicle or an oncoming vehicle detected by the exterior information detection unit 12030, thereby performing cooperative control aimed at preventing glare by controlling the headlights.

[0483] The sound / image output unit 12052 transmits an output signal of at least one of sound and image to an output device, which can notify information to the passengers of the vehicle or the outside of the vehicle in a visual or auditory manner. Figure 36 In the example of FIG, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown as output devices. The display portion 12062 may include, for example, at least one of an in-vehicle display and a head-up display.

[0484] Figure 37 12031 is a schematic diagram illustrating an example of an installation position of the imaging portion 12031.

[0485] exist Figure 37 , the imaging unit 12031 includes imaging units 12101 , 12102 , 12103 , 12104 and 12105 .

[0486] Imaging units 12101, 12102, 12103, 12104, and 12105 can be positioned on the front nose, sideview mirrors, rear bumper, rear door, and upper portion of the windshield inside the vehicle 12100. Imaging unit 12101 positioned on the front nose and imaging unit 12105 positioned on upper portion of the windshield inside the vehicle primarily capture images of the front of the vehicle 12100. Imaging units 12102 and 12103 positioned on the sideview mirrors primarily capture images of the sides of the vehicle 12100. Imaging unit 12104 positioned on the rear bumper or rear door primarily captures images of the rear of the vehicle 12100. Imaging unit 12105 positioned on upper portion of the windshield inside the vehicle primarily detects vehicles ahead, pedestrians, obstacles, signals, traffic signs, lanes, and the like.

[0487] By the way, Figure 37 Examples of the imaging ranges of imaging units 12101 to 12104 are shown. Imaging range 12111 represents the imaging range of imaging unit 12101, which is located at the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103, respectively, located at the side mirrors. Imaging range 12114 represents the imaging range of imaging unit 12104, which is located at the rear bumper or rear door. For example, by superimposing the image data captured by imaging units 12101 to 12104, a bird's-eye view image of vehicle 12100 viewed from above can be obtained.

[0488] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0489] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can determine the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the temporal change in that distance (relative speed to the vehicle 12100), thereby extracting the closest three-dimensional object as the leading vehicle. Specifically, the closest three-dimensional object is located on the driving path of the vehicle 12100 and is traveling at a predetermined speed (e.g., equal to or greater than 0 km / h) in substantially the same direction as the vehicle 12100. Furthermore, the microcomputer 12051 can pre-set a following distance to be maintained from the leading vehicle and execute automatic braking control (including following parking control), automatic acceleration control (including following starting control), and the like. Thus, it is possible to execute cooperative control for automatic driving, etc., that is independent of the driver's operation.

[0490] For example, based on the distance information obtained from imaging units 12101 to 12104, microcomputer 12051 can classify 3D object data regarding 3D objects into 3D object data for two-wheeled vehicles, standard-sized vehicles, large vehicles, pedestrians, utility poles, and other 3D objects. It can then extract the classified 3D object data for automatic obstacle avoidance. For example, microcomputer 12051 can determine whether obstacles around vehicle 12100 are visually recognizable by the driver of vehicle 12100 or obstacles that are difficult for the driver to visually identify. Microcomputer 12051 then determines a collision risk, indicating the risk of collision with each obstacle. If the collision risk is equal to or greater than a set value, indicating the possibility of a collision, microcomputer 12051 outputs a warning to the driver via audio speaker 12061 or display unit 12062, and executes forced deceleration or evasive steering via drive system control unit 12010. Thus, microcomputer 12051 can assist in driving to avoid collisions.

[0491] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can identify pedestrians by determining whether a pedestrian exists in the images captured by the imaging units 12101 to 12104. This pedestrian recognition is performed, for example, by a program that extracts characteristic points from the images captured by the imaging units 12101 to 12104, which are infrared cameras, and a program that determines whether a pedestrian exists by performing pattern matching on a series of characteristic points representing the object's outline. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and identifies the pedestrian, the audio / video output unit 12052 controls the display unit 12062 to display a square outline superimposed on the recognized pedestrian to emphasize the recognized pedestrian. The audio / video output unit 12052 can also control the display unit 12062 to display an icon representing the pedestrian at a desired location.

[0492] The above description is of an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging portion 12031 in the configuration explained above. Specifically, Figure 1 The photodetection device 1 can be applied to the imaging portion 12031. By applying the technology according to the present disclosure to the imaging portion 12031, the detection sensitivity of the phase difference in the imaging portion 12031 can be improved.

[0493] [Application examples of endoscopic surgery systems]

[0494] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure can be applied to an endoscopic surgery system.

[0495] Figure 38 This is a diagram showing one example of a schematic configuration of an endoscopic surgery system to which the technology according to one embodiment of the present disclosure (the present technology) can be applied.

[0496] exist Figure 38 , a state is shown in which a surgeon (medical doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As depicted, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy therapy tool 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices used for endoscopic surgery.

[0497] Endoscope 11100 includes a lens barrel 11101 having a predetermined length at its distal end inserted into a body cavity of a patient 11132, and a camera 11102 connected to the proximal end of lens barrel 11101. In the depicted example, endoscope 11100 is depicted as including a rigid scope having a rigid lens barrel 11101. However, endoscope 11100 may also include a flexible scope having a flexible lens barrel 11101.

[0498] The lens barrel 11101 has an opening at its distal end for mounting an objective lens. A light source device 11203 is connected to the endoscope 11100 so that light generated by the light source device 11203 is introduced into the distal end of the lens barrel 11101 through a light guide extending within the lens barrel 11101 and illuminates an observation target in the body cavity of the patient 11132 through the objective lens. It should be noted that the endoscope 11100 may be a straight-view endoscope or an oblique-view endoscope or a side-view endoscope.

[0499] The camera head 11102 is equipped with an optical system and an imaging element. Light reflected from the observation target (observation light) is focused onto the imaging element through the optical system. The observation light is photoelectrically converted by the imaging element to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the CCU 11201.

[0500] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), and the like to integrally control the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives image signals from the camera 11102 and performs various image processing on the image signals, such as development processing (demosaicing processing), for displaying images based on the image signals.

[0501] The display device 11202 displays thereon an image based on an image signal on which image processing has been performed by the CCU 11201 under the control of the CCU 11201 .

[0502] The light source device 11203 includes a light source such as a light emitting diode (LED) and supplies irradiation light when imaging the surgical area onto the endoscope 11100.

[0503] The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various information or commands into the endoscopic surgery system 11000 through the input device 11204. For example, the user can input a command to change the imaging conditions of the endoscope 11100 (such as the type of illumination light, magnification, and focal length).

[0504] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for purposes such as burning or cutting tissue and sealing blood vessels. The pneumoperitoneum device 11206 insufflates the body cavity of the patient 11132 by feeding gas through the pneumoperitoneum tube 11111, thereby ensuring the field of view of the endoscope 11100 and the surgeon's working space. The recorder 11207 is a device capable of recording various surgical information. The printer 11208 is a device capable of printing surgical information in various formats, such as text, images, or charts.

[0505] It should be noted that the light source device 11203 that supplies irradiation light when imaging the surgical area onto the endoscope 11100 may include a white light source, including, for example, an LED, a laser source, or a combination thereof. When the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output time of each color (each wavelength) can be controlled with high precision, the white balance of the captured image can be adjusted by the light source device 11203. Further, in this case, if the laser beams of the respective RGB laser sources are irradiated onto the observation target in a time-differentiated manner, the drive of the imaging element of the camera 11102 is controlled in synchronization with the irradiation time, and images corresponding to the R, G, and B colors individually can be captured in a time-differentiated manner. According to this method, a color image can be obtained even if a color filter is not provided to the imaging element.

[0506] Furthermore, the light source device 11203 can be controlled so that the output light intensity changes at every predetermined time. By controlling the driving of the imaging element of the camera 11102 in synchronization with the timing of the light intensity change to acquire images differentiated by time, and synthesizing the images, a high dynamic range image without underexposed, thick shadows or overexposed highlights can be generated.

[0507] Furthermore, the light source device 11203 can be configured to supply light of a predetermined wavelength band, ready for specific light observation. In specific light observation, for example, by utilizing the wavelength dependence of the absorption of light by body tissues and using a narrow-band irradiation light compared to the irradiation light (i.e., white light) during ordinary observation, predetermined tissues such as blood vessels on the surface of the mucosa are imaged with high contrast, which is narrow-band observation (narrow-band imaging). Alternatively, in specific light observation, fluorescence observation can be performed to obtain an image from the fluorescence generated by irradiating excitation light. In fluorescence observation, fluorescence observation of body tissues (autofluorescence observation) can be performed by irradiating excitation light on body tissues, or a fluorescence image can be obtained by locally injecting a reagent such as indocyanine green (ICG) into the body tissues and irradiating excitation light of a fluorescence wavelength corresponding to the reagent onto the body tissues. The light source device 11203 can be configured to supply such narrow-band light and / or excitation light suitable for the above-mentioned specific light observation.

[0508] Figure 39 It depicts Figure 38 A block diagram of an example of the functional configuration of the camera 11102 and the CCU 11201 is depicted.

[0509] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected via a transmission cable 11400 for communication with each other.

[0510] The lens unit 11401 is an optical system provided at a connection position with the lens barrel 11101. Observation light collected by the distal end of the lens barrel 11101 is guided to the camera 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of multiple lenses, including a zoom lens and a focus lens.

[0511] The number of imaging elements included in the imaging unit 11402 can be one (single-board type) or multiple (multi-board type). When the imaging unit 11402 is configured as a multi-board type, for example, each imaging element generates an image signal corresponding to each R, G, and B, and the image signals can be synthesized to obtain a color image. The imaging unit 11402 can also be configured to have a pair of imaging elements for obtaining image signals for the right eye and the left eye, respectively, corresponding to a three-dimensional (3D) display. If a 3D display is performed, the surgeon 11131 can understand the depth of the living tissue in the surgical area more accurately. It should be noted that when the imaging unit 11402 is configured as a multi-board type, the lens unit 11401 also provides multiple systems corresponding to each imaging element.

[0512] Furthermore, the imaging unit 11402 may not necessarily be provided on the camera head 11102. For example, the imaging unit 11402 may be provided immediately after the objective lens in the lens barrel 11101.

[0513] The driving unit 11403 includes an actuator and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera control unit 11405. This allows the magnification and focus of the image captured by the camera unit 11402 to be appropriately adjusted.

[0514] The communication unit 11404 includes a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal acquired by the imaging unit 11402 to the CCU 11201 as RAW data via the transmission cable 11400.

[0515] In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera 11102 from the CCU 11201 and supplies the control signal to the camera control unit 11405. The control signal includes information related to imaging conditions, such as information specifying a frame rate for capturing an image, information specifying an exposure value when capturing an image, and / or information specifying a magnification and a focus for capturing an image.

[0516] It should be noted that imaging conditions such as frame rate, exposure value, magnification, or focus may be appropriately specified by the user or automatically set based on the acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, the endoscope 11100 is equipped with an automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function.

[0517] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 11201 through the communication unit 11404 .

[0518] The communication unit 11411 includes a communication device for transmitting and receiving various information to and from the camera 11102. The communication unit 11411 receives an image signal transmitted thereto from the camera 11102 through the transmission cable 11400.

[0519] Furthermore, the communication unit 11411 transmits a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal may be transmitted through electrical communication, optical communication, or the like.

[0520] The image processing unit 11412 performs various image processing on the image signal in the form of RAW data transmitted thereto from the camera 11102 .

[0521] The control unit 11413 performs various controls related to imaging the surgical area, etc., through the endoscope 11100 , and displaying images obtained by imaging the surgical area, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0522] Furthermore, control unit 11413 controls display device 11202 to display a captured image based on the image signal processed by image processing unit 11412, which depicts the surgical area. Control unit 11413 can use various image recognition technologies to identify various objects in the captured image. For example, control unit 11413 can detect the shape and color of the edges of objects in the captured image to identify surgical tools such as forceps, specific living areas, bleeding, and fog when using energy therapy tool 11112. When controlling display device 11202 to display the captured image, control unit 11413 can utilize the recognition results to display various surgical support information superimposed on the image of the surgical area. When surgical support information is displayed and presented to surgeon 11131 in an overlaid manner, the burden on surgeon 11131 can be reduced, allowing surgeon 11131 to confidently continue the procedure.

[0523] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 to each other is an electric signal cable for communication of electric signals, an optical fiber for optical communication, or a composite cable for both electric and optical communication.

[0524] Here, although wired communication is performed by utilizing the transmission cable 11400 in the described example, communication between the camera 11102 and the CCU 11201 may also be wireless communication.

[0525] The above description is an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 11402 of the camera head 11102 in the above configuration. Specifically, Figure 1 The photoelectric detection device 1 can be applied to the imaging unit 11402. By applying the technology according to the present disclosure to the imaging unit 11402, since the detection sensitivity of the phase difference in the imaging unit 11402 can be improved, the surgeon can safely inspect the surgical area.

[0526] In addition, here, the description is given by taking the endoscopic surgery system as an example. However, the technology according to the present disclosure can also be applied to, for example, a microsurgery system.

[0527] Although the embodiments of the present disclosure are described above, the technical scope of the present disclosure is not limited to the embodiments themselves. Various changes can be made without departing from the gist of the present disclosure. Components in different embodiments and modifications can be appropriately combined.

[0528] The effects described in this specification are merely examples and are not limiting. Other effects may exist.

[0529] It should be noted that the present technology can also adopt the following configurations. (1)

[0531] A photoelectric detection device, comprising:

[0532] a photoelectric conversion layer including a photoelectric conversion portion group configured by a plurality of photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon; and

[0533] The color separator layer is located closer to the light incident side than the photoelectric conversion layer and has a metasurface structure. (2)

[0535] The photoelectric detection device according to (1) above, wherein

[0536] The photoelectric conversion unit group is composed of a pair of photoelectric conversion units. (3)

[0538] The photoelectric detection device according to (1) above, wherein

[0539] The photoelectric conversion unit group is composed of four photoelectric conversion units. (4)

[0541] The photoelectric detection device according to any one of (1) to (3) above, further comprising:

[0542] The other photoelectric conversion layer is located on the light incident side of the photoelectric conversion layer and includes a plurality of other photoelectric conversion sections. (5)

[0544] The photoelectric detection device according to (4) above, wherein:

[0545] The other photoelectric conversion layer includes another photoelectric conversion portion group composed of a plurality of other photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon. (6)

[0547] The photoelectric detection device according to (5) above, wherein

[0548] The other photoelectric conversion portion group is composed of a pair of other photoelectric conversion portions. (7)

[0550] The photoelectric detection device according to (5) above, wherein

[0551] The other photoelectric conversion portion group is composed of four other photoelectric conversion portions. (8)

[0553] The photoelectric detection device according to any one of (4) to (7) above, wherein:

[0554] The other photoelectric conversion layer is located on the light incident side of the color separator layer. (9)

[0556] The photoelectric detection device according to any one of (4) to (7) above, wherein:

[0557] The color separator layer is located on the light incident side relative to the other photoelectric conversion layer. (10)

[0559] The photoelectric detection device according to (8) or (9) above, wherein:

[0560] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region that is a visible region and a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region that is a visible region, and

[0561] The other photoelectric conversion layer includes a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region that is a visible region. (11)

[0563] The photoelectric detection device according to (8) above, wherein:

[0564] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0565] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (12)

[0567] The photoelectric detection device according to (9) above, wherein:

[0568] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0569] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (13)

[0571] The photoelectric detection device according to any one of (1) to (3) above, further comprising:

[0572] The other photoelectric conversion layer is located on the side opposite to the light incident side of the photoelectric conversion layer and includes a plurality of other photoelectric conversion portions. (14)

[0574] The photoelectric detection device according to (13) above, wherein

[0575] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0576] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (15)

[0578] A photoelectric detection device, comprising:

[0579] a photoelectric conversion layer including a photoelectric conversion portion group consisting of two photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon;

[0580] A color separator layer located closer to the light incident side than the photoelectric conversion layer and having a metasurface structure; and

[0581] another photoelectric conversion layer located on the light incident side of the photoelectric conversion layer and including another photoelectric conversion portion group including two other photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon, wherein

[0582] A division direction of the photoelectric conversion portion group and a division direction of another photoelectric conversion portion group corresponding to the photoelectric conversion portion group intersect with each other. (16)

[0584] The photoelectric detection device according to (15) above, wherein

[0585] The other photoelectric conversion layer is located on the light incident side of the color separator layer. (17)

[0587] The photoelectric detection device according to (15) above, wherein

[0588] The color separator layer is located on the light incident side relative to the other photoelectric conversion layer. (18)

[0590] The photoelectric detection device according to (16) or (17) above, wherein:

[0591] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region that is a visible region and a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region that is a visible region, and

[0592] The other photoelectric conversion layer includes a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region that is a visible region. (19)

[0594] The photoelectric detection device according to (16) or (17) above, wherein:

[0595] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0596] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (20)

[0598] The photoelectric detection device according to (16) or (17) above, wherein:

[0599] The photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region that is an infrared region, and

[0600] The other photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region. (twenty one)

[0602] An electronic device, comprising:

[0603] Photoelectric detection device;

[0604] an optical system for imaging the incident light on the light detection device; and

[0605] a signal processing circuit that performs predetermined processing on the signal output from the photodetection device;

[0606] The above-mentioned photoelectric detection device has:

[0607] a photoelectric conversion layer including a photoelectric conversion portion group configured by a plurality of photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon; and

[0608] The color separator layer is located closer to the light incident side than the photoelectric conversion layer and has a metasurface structure. (twenty two)

[0610] The electronic device according to (21) above, wherein

[0611] The photoelectric conversion unit group is composed of a pair of photoelectric conversion units. (twenty three)

[0613] The electronic device according to (21) above, wherein

[0614] The photoelectric conversion portion group includes four photoelectric conversion portions. (twenty four)

[0616] The electronic device according to any one of (21) to (23), wherein

[0617] The photodetection device further includes another photoelectric conversion layer, which is located on the light incident side of the photoelectric conversion layer and has a plurality of other photoelectric conversion sections. (25)

[0619] The electronic device according to (24) above, wherein

[0620] The other photoelectric conversion layer includes another photoelectric conversion portion group composed of a plurality of other photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon. (26)

[0622] The electronic device according to (25) above, wherein:

[0623] The other photoelectric conversion portion group is composed of a pair of other photoelectric conversion portions. (27)

[0625] The electronic device according to (25) above, wherein:

[0626] The other photoelectric conversion portion group is composed of four other photoelectric conversion portions. (28)

[0628] The electronic device according to any one of (24) to (27), wherein

[0629] The other photoelectric conversion layer is located on the light incident side of the color separator layer. (29)

[0631] The electronic device according to any one of (24) to (27), wherein

[0632] The color separator layer is located on the light incident side relative to the other photoelectric conversion layer. (30)

[0634] The electronic device according to (28) or (29) above, wherein

[0635] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region that is a visible region and a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region that is a visible region, and

[0636] The other photoelectric conversion layer includes a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region that is a visible region. (31)

[0638] The electronic device according to (28) above, wherein

[0639] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0640] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (32)

[0642] The electronic device according to (29) above, wherein

[0643] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0644] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (33)

[0646] The electronic device according to any one of (21) to (23), wherein

[0647] The photodetection device further includes another photoelectric conversion layer, which is located on the opposite side of the photoelectric conversion layer to the light incident side and has a plurality of other photoelectric conversion sections. (34)

[0649] The electronic device according to (33) above, wherein

[0650] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0651] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region. (35)

[0653] An electronic device, comprising:

[0654] Photoelectric detection device;

[0655] an optical system for imaging the incident light on the light detection device; and

[0656] a signal processing circuit that performs predetermined processing on the signal output from the photodetection device;

[0657] The above-mentioned photoelectric detection device has:

[0658] a photoelectric conversion layer including a photoelectric conversion portion group consisting of two photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon;

[0659] A color separator layer located closer to the light incident side than the photoelectric conversion layer and having a metasurface structure; and

[0660] another photoelectric conversion layer located on the light incident side of the photoelectric conversion layer and including another photoelectric conversion portion group consisting of two other photoelectric conversion portions capable of detecting a phase difference between incident light beams incident thereon, and

[0661] A division direction of the photoelectric conversion portion group and a division direction of another photoelectric conversion portion group corresponding to the photoelectric conversion portion group intersect with each other. (36)

[0663] The electronic device according to (35) above, wherein

[0664] The other photoelectric conversion layer is located on the light incident side of the color separator layer. (37)

[0666] The electronic device according to (35) above, wherein

[0667] The color separator layer is also located on the light incident side of another photoelectric conversion layer. (38)

[0669] The electronic device according to (36) or (37) above, wherein

[0670] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region that is a visible region and a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region that is a visible region, and

[0671] The other photoelectric conversion layer includes a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region that is a visible region. (39)

[0673] The electronic device according to (36) or (37) above, wherein

[0674] The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and

[0675] The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region.

[0676] Reference Number List

[0677] 1 Photoelectric detection device

[0678] 2 pixels

[0679] 3-pixel area

[0680] 20 semiconductor layer (example of photoelectric conversion layer)

[0681] 50 color separator layers

[0682] 60 Organic photoelectric conversion layer (another example of a photoelectric conversion layer)

[0683] 62 Photoelectric conversion region (an example of another photoelectric conversion region and a fourth photoelectric conversion region)

[0684] 62A Photoelectric conversion unit group (another example of a photoelectric conversion unit group)

[0685] 101 Electronic Equipment

[0686] 120 semiconductor layer (another example of a photoelectric conversion layer)

[0687] 160 organic photoelectric conversion layer (example of photoelectric conversion layer)

[0688] 162 Photoelectric conversion unit (example of photoelectric conversion unit)

[0689] 1621 Photoelectric conversion unit (an example of a photoelectric conversion unit and a first photoelectric conversion unit)

[0690] 1622 Photoelectric conversion unit (an example of a photoelectric conversion unit and a second photoelectric conversion unit)

[0691] 1623 Photoelectric conversion unit (an example of a photoelectric conversion unit and a third photoelectric conversion unit)

[0692] 1621A-1623A Photoelectric conversion unit group (Example of a photoelectric conversion unit group)

[0693] CS1, CS2, CS3 Color Separators

[0694] PD1 photodiode (an example of a photoelectric conversion portion and a first photoelectric conversion portion)

[0695] PD2 photodiode (an example of a photoelectric conversion unit and a second photoelectric conversion unit)

[0696] PD3 photodiode (an example of a photoelectric conversion portion and a third photoelectric conversion portion)

[0697] PD4 photodiode (another photoelectric conversion portion and an example of a fourth photoelectric conversion portion)

[0698] PD1A to PD3A photodiode group (example of photoelectric conversion unit group)

[0699] PD4A: photodiode group (an example of another photoelectric conversion unit group).

Claims

1. A photoelectric detection device comprising: a photoelectric conversion layer including a photoelectric conversion portion group configured by a plurality of photoelectric conversion portions capable of detecting a phase difference between incident light beams incident on the plurality of photoelectric conversion portions; as well as The color separator layer is located closer to the light incident side than the photoelectric conversion layer and has a metasurface structure.

2. The photoelectric detection device according to claim 1, wherein The photoelectric conversion unit group is configured by a pair of the photoelectric conversion units.

3. The photoelectric detection device according to claim 1, wherein The photoelectric conversion unit group is configured by four photoelectric conversion units.

4. The photoelectric detection device according to claim 1, further comprising: Another photoelectric conversion layer is located on the light incident side of the photoelectric conversion layer and includes a plurality of other photoelectric conversion sections.

5. The photoelectric detection device according to claim 4, wherein: The other photoelectric conversion layer includes another photoelectric conversion portion group configured by the plurality of other photoelectric conversion portions capable of detecting a phase difference between incident light beams incident on the plurality of other photoelectric conversion portions. The photoelectric detection device according to claim 5 , wherein: The other photoelectric conversion portion group is configured by a pair of the other photoelectric conversion portions.

7. The photodetection device according to claim 5, wherein: The other photoelectric conversion portion group is configured by four of the other photoelectric conversion portions.

8. The photoelectric detection device according to claim 4, wherein: The other photoelectric conversion layer is located closer to the light incident side than the color separator layer.

9. The photoelectric detection device according to claim 4, wherein: The color separator layer is located closer to the light incident side than the other photoelectric conversion layer.

10. The photoelectric detection device according to claim 8, wherein The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region that is a visible region and a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region that is a visible region, and The other photoelectric conversion layer includes a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region that is a visible region.

11. The photoelectric detection device according to claim 8, wherein The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region.

12. The photoelectric detection device according to claim 9, wherein The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region.

13. The photoelectric detection device according to claim 1, further comprising: Another photoelectric conversion layer is located on the side opposite to the light incident side of the photoelectric conversion layer and includes a plurality of other photoelectric conversion portions.

14. The photodetection device according to claim 13, wherein: The photoelectric conversion layer includes a first photoelectric conversion portion that photoelectrically converts light in a first wavelength region as a visible region, a second photoelectric conversion portion that photoelectrically converts light in a second wavelength region as a visible region, and a third photoelectric conversion portion that photoelectrically converts light in a third wavelength region as a visible region, and The other photoelectric conversion layer includes a fourth photoelectric conversion portion that photoelectrically converts light in a fourth wavelength region, which is an infrared region.

15. A photoelectric detection device comprising: a photoelectric conversion layer including a photoelectric conversion portion group consisting of two photoelectric conversion portions capable of detecting a phase difference between incident light beams incident on the two photoelectric conversion portions; a color separator layer, located closer to the light incident side than the photoelectric conversion layer and having a metasurface structure; as well as another photoelectric conversion layer, located on the light incident side of the photoelectric conversion layer and including another photoelectric conversion portion group, the other photoelectric conversion portion group including two other photoelectric conversion portions, the two other photoelectric conversion portions being capable of detecting a phase difference between incident light beams incident on the two other photoelectric conversion portions, wherein A division direction of the photoelectric conversion portion group and a division direction of the other photoelectric conversion portion group corresponding to the photoelectric conversion portion group intersect with each other.

16. An electronic device comprising: Photoelectric detection device; an optical system for forming an image of incident light on the photodetection device; as well as a signal processing circuit that performs predetermined processing on a signal output from the photodetection device, The photoelectric detection device comprises: a photoelectric conversion layer including a photoelectric conversion portion group configured by a plurality of photoelectric conversion portions capable of detecting a phase difference between incident light beams incident on the plurality of photoelectric conversion portions; as well as The color separator layer is located closer to the light incident side than the photoelectric conversion layer and has a metasurface structure.

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