Driving assembly, semiconductor processing system and method for depositing material layer

Abstract

A drive assembly includes a shaft member, a shaft bracket, and a permanent magnet. The shaft member has a star end and a drive end arranged along an axis of rotation. The shaft bracket mounts the drive end of the shaft member therein and is rotationally fixed relative to the shaft member about an axis of rotation. A permanent magnet is disposed in the shaft bracket, rotationally fixed relative to the shaft bracket about an axis of rotation, and axially offset from the star end of the shaft member to electro-magnetically levitate and electromagnetically rotate the substrate support carried on the star end of the shaft member. A semiconductor processing system including the drive assembly and a method of depositing a material layer onto a substrate using the drive assembly are also described.

Description

Technical Field

[0001] The present disclosure relates generally to depositing material layers onto substrates, and more particularly, to depositing material layers onto substrates during the fabrication of semiconductor devices. Background Art

[0002] A layer of material is typically deposited onto a substrate during the manufacture of semiconductor devices (e.g., during the manufacture of integrated circuits and power electronic semiconductor devices). Deposition can be achieved by placing the substrate in a reactor on a substrate support, heating the substrate to a desired temperature, and exposing the substrate to a precursor under selected environmental conditions so that the material layer is formed onto the substrate. Once the material layer develops the desired properties, the flow of the precursor is typically stopped so that the substrate can be removed from the substrate support and removed from the reactor for further processing, which is suitable for the semiconductor device being manufactured. In some reactors, the substrate support can be rotated during the deposition of the material layer onto the substrate, for example, using rotation transmitted by gears or a transmission.

[0003] Such methods and systems are generally considered suitable for their intended purposes. However, there remains a need in the art for improved drive assemblies, semiconductor processing systems including drive assemblies, and methods for depositing a material layer onto a substrate using a semiconductor processing system having a drive assembly. The present disclosure provides a solution to this need. Summary of the Invention

[0004] A drive assembly is provided. The drive assembly includes a shaft member, a shaft support, and a permanent magnet. The shaft member has a star end and a drive end arranged along a rotational axis. The shaft support houses the drive end of the shaft member and is rotationally fixed relative to the shaft member about the rotational axis. A permanent magnet is housed in the shaft support, rotationally fixed relative to the shaft support about the rotational axis, and axially offset from the star end of the shaft member to at least one of electromagnetically suspend a substrate support carried on the star end along the rotational axis and electromagnetically rotate the substrate support carried on the star end about the rotational axis.

[0005] In addition to one or more of the above features, or as an alternative, another example of a drive assembly may include: the shaft support has a first surface, a second surface, and an intermediate surface. The first surface may extend around the axis of rotation and define an axle seat therein. The second surface may also extend around the axis of rotation and be axially offset from the first surface in a direction opposite to the shaft member. The intermediate surface may extend around the axis of rotation and couple the first surface of the shaft support to the second surface of the shaft support. The second surface may taper axially along the axis of rotation between a major radial width proximate the intermediate surface and a minor radial width axially opposite the first surface of the shaft support. The shaft support may be formed of a non-magnetic material such as a polymer material or an aluminum-containing material.

[0006] In addition to or instead of one or more of the above features, further examples of the drive assembly may include a permanent magnet axially disposed between the first and second surfaces of the shaft support to electromagnetically rotate the shaft support and thereby the substrate support about the rotational axis.

[0007] In addition to or instead of one or more of the above features, further examples of the drive assembly may include a permanent magnet axially disposed between a major radial width and a minor radial width defined by the shaft support to electromagnetically suspend the shaft support and thereby the substrate support along the rotational axis.

[0008] In addition to or instead of one or more of the above features, further examples of the drive assembly may include a sensor opposite the shaft bracket and configured to acquire at least one of an axial position of the substrate support along the rotation axis and a rotational position of the substrate support during rotation about the rotation axis.

[0009] In addition to or in lieu of one or more of the above features, another example of a drive assembly can include a stator body extending around the shaft support. The stator body can be formed from a non-magnetic material, such as a polymer material or an aluminum-containing material. The stator body can have a hollow interior terminating in a tapered recess. The stator body can receive the shaft support within the hollow interior of the stator body to electromagnetically levitate and rotate the shaft support within the hollow interior of the stator body.

[0010] In addition to or as an alternative to one or more of the above features, further examples of the drive assembly may include: the stator body may have an inner recess conjugated with the second surface of the shaft support for positioning the shaft support therein.

[0011] In addition to one or more of the above features, or as an alternative, another example of a drive assembly can include a plurality of windings. The plurality of windings can be distributed circumferentially around the axis of rotation. The plurality of windings and the one or more permanent magnets occupy a common axial position along the axis of rotation.

[0012] In addition to or as an alternative to one or more of the above features, further examples of drive assemblies may include a plurality of windings axially overlapped along the axis of rotation by a shaft support.

[0013] In addition to or instead of one or more of the above features, further examples of the drive assembly may include the plurality of windings being at least one of (a) arranged in a grid and (b) distributed around a circumference covered by the shaft support along the axis of rotation.

[0014] In addition to or as an alternative to one or more of the above features, further examples of the drive assembly may include: the shaft member including or being formed from a ceramic material. The ceramic material may include (eg, consisting of or consisting essentially of) quartz, fused silicon, or sapphire.

[0015] A semiconductor processing system is provided. The semiconductor processing system includes a chamber apparatus having a chamber body, a drive assembly as described above, a substrate support, and a controller. The chamber body has a hollow interior. A shaft member of the drive assembly extends into the chamber body such that a star-shaped end of the shaft member is disposed within the interior of the chamber body. The substrate support is disposed within the interior of the chamber body and is rotationally fixed relative to the shaft member of the drive assembly about a rotation axis. The controller is operably connected to the drive assembly and, in response to instructions recorded on a memory, uses the drive assembly to electromagnetically suspend the substrate support within the interior of the chamber body and along the rotation axis. The instructions recorded on the memory further cause the controller to electromagnetically rotate the substrate support within the interior of the chamber body and about the rotation axis using the drive assembly.

[0016] In addition to or as an alternative to one or more of the above features, another example of a semiconductor processing system may include: the permanent magnet is a first permanent magnet, and the semiconductor processing system further includes a second permanent magnet, a first plurality of windings, and a second plurality of windings. The first permanent magnet may be axially disposed between a first surface and a second surface of a shaft support. The second permanent magnet may be fixed in the shaft support and axially disposed between a major radial width and a minor radial width defined by the shaft support. The first plurality of windings may be radially offset from the shaft support and configured to electromagnetically apply a rotational force on the shaft support via the first permanent magnet. The second plurality of windings may be axially offset from the shaft support and configured to electromagnetically apply an axial force on the shaft support via the second permanent magnet. Instructions recorded on the memory may further cause the controller to electromagnetically rotate the substrate support about a rotation axis using the one or more first permanent magnets and a rotational current provided to the second plurality of windings, and electromagnetically levitate the substrate support along the rotation axis using the one or more second permanent magnets and a levitation current provided to the first plurality of windings.

[0017] In addition to or in lieu of one or more of the above features, further examples of semiconductor processing systems can include a sensor, such as an optical sensor, such as an interferometer or a Hall effect sensor. The sensor can be disposed in communication with the shaft support and configured to provide a signal to the controller indicative of at least one of an axial position and a rotational position of the substrate support within the chamber body.

[0018] In addition to or instead of one or more of the above features, further examples of semiconductor processing systems may include instructions that further cause the controller to use a signal provided by the sensor to control at least one of an axial position of the substrate support along the rotational axis and a rotational speed of the substrate support about the rotational axis within the chamber body.

[0019] In addition to or instead of one or more of the features described above, further examples of semiconductor processing systems can include instructions that cause the controller to use signals provided by the sensor to control at least one of a bounce and a wobble of the substrate support within the chamber body during rotation about the rotation axis.

[0020] A material layer deposition method is provided. The method includes: at a semiconductor processing system including the drive assembly described above, placing a substrate on a substrate support, and heating the substrate to a predetermined material layer deposition temperature while at least one of electromagnetically levitating and electromagnetically rotating the substrate support using a permanent magnet and a plurality of windings electromagnetically coupled to the permanent magnet; exposing the substrate to a material layer precursor; and depositing the material layer onto the substrate using the material layer precursor.

[0021] In addition to or instead of one or more of the features described above, further examples of material layer deposition methods may include: determining an axial position of a substrate support along an axis of rotation during rotation about the axis of rotation; comparing the determined axial position with a predetermined axial position; and adjusting an axial height of the substrate support during deposition of the material layer onto the substrate when the determined axial position differs from the predetermined axial position by more than a predetermined amount.

[0022] In addition to or instead of one or more of the features described above, further examples of material layer deposition methods may include: determining a rotational speed of a substrate support about a rotational axis during rotation about the rotational axis; comparing the determined rotational speed of the substrate support with a predetermined rotational speed; and adjusting the rotational speed of the substrate support during deposition of the material layer onto the substrate when the determined rotational speed differs from the predetermined rotational speed by more than a predetermined amount.

[0023] In addition to or instead of one or more of the features described above, further examples of material layer deposition methods may include: determining a runout of a substrate support about a rotation axis during rotation about the rotation axis; comparing the determined runout of the substrate support with a predetermined runout value; and adjusting the runout of the substrate support during deposition of the material layer onto the substrate when the determined runout differs from the predetermined runout value by more than a predetermined amount.

[0024] In addition to or instead of one or more of the features described above, further examples of material layer deposition methods may include: determining a swing of a substrate support about a rotation axis during rotation about the rotation axis; comparing the determined swing of the substrate support with a predetermined swing value; and adjusting the swing of the substrate support during deposition of the material layer onto the substrate when the determined swing differs from the predetermined swing value by more than a predetermined amount.

[0025] This summary is provided to introduce a selection of concepts in a simplified form. These concepts are further described in detail in the detailed description of example embodiments of the present disclosure below. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] These and other features, aspects, and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate and not to limit the present invention.

[0027] Figure 1 is a schematic diagram of a semiconductor processing system according to the present disclosure, showing a substrate support being electromagnetically levitated and rotated by a drive assembly during deposition of a material layer onto a substrate;

[0028] Figure 2 According to the examples of the present disclosure Figure 1 a cross-sectional side view of a portion of a semiconductor processing system illustrating a chamber arrangement and a controller of the semiconductor processing system;

[0029] Figure 3 and Figure 4 According to the examples of the present disclosure Figure 1 side and exploded views of a drive assembly showing a shaft support for housing a shaft member and a permanent magnet for electromagnetically coupling with a first winding array and a second winding array;

[0030] Figure 5 is a plan view of a portion of a drive assembly according to an example of the present disclosure, Figure 3 an exploded view of a drive assembly schematically illustrating the first and second winding arrays operatively connected to a power source via a controller; and

[0031] Figures 6 to 10 is a block diagram of a material layer deposition method according to the present disclosure, showing operations of the method according to illustrative and non-limiting examples of the method.

[0032] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0033] Reference will now be made to the drawings, wherein like reference numerals identify similar structural features or aspects of the subject disclosure. For purposes of illustration and description, and not limitation, a partial view of a semiconductor processing system including a drive assembly according to the present disclosure is shown in FIG. Figure 1 , and is generally designated by the reference numeral 100. Figure 2-10 Other examples of semiconductor processing systems, drive assemblies, and methods of depositing a material layer onto a substrate according to the present disclosure or aspects thereof are provided in

[0026] , as will be described. The systems and methods of the present disclosure can be used to deposit a material layer, such as a silicon-containing epitaxial material layer, onto a substrate using chemical vapor deposition (CVD) techniques during the manufacture of semiconductor devices, but the present disclosure is not limited to any particular material layer nor to CVD deposition techniques.

[0034] refer to Figure 1 , a semiconductor processing system 200 including a drive assembly 100 is shown. The semiconductor processing system 200 includes a precursor source 202, a chamber arrangement 204 including the drive assembly 100, an exhaust source 206, and a controller 208. The precursor source 202 is coupled to the chamber arrangement 204 via a precursor supply conduit 210, includes a material layer precursor 10, and is configured to deliver a flow of the material layer precursor 10 to the chamber arrangement 204. The chamber arrangement 204 includes a substrate support 212, is coupled to the exhaust source 206 via an exhaust conduit 214, and is configured to expose the substrate 2, which is positioned on the substrate support 212, to the material layer precursor 10 under selected environmental conditions (e.g., pressure and / or temperature) while electromagnetically levitating and rotating the substrate 2 using the drive assembly 100, so that a material layer 4 is deposited onto the substrate 2. The exhaust source 206 is in communication with the external environment 12 outside the semiconductor processing system 200 and is configured to convey a flow of residual precursors and / or reaction products 14 exhausted by the chamber arrangement 204 during deposition of the material layer 4 onto the substrate 2, for example using a vacuum pump and an abatement device such as a scrubber. The controller 208 is operatively connected to one or more elements of the semiconductor processing system 200, such as the drive assembly 100, to control the electromagnetic levitation and / or rotation R of the substrate support 212 during deposition of the material layer 4 onto the substrate 2, and in this regard may be coupled thereto via a wired or wireless link 216.

[0035] In some examples, the precursor source 202 can be configured to deliver one or more silicon-containing material layer precursors within the material layer precursor 10 delivered to the chamber apparatus 204. Examples of suitable material layer precursors include non-chlorinated silicon-containing material layer precursors, such as silane (SiH4) and disilane (Si2H6), and chlorinated silicon material layer precursors, such as dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). According to some examples, the precursor source 202 can be configured to deliver a dopant-containing material layer precursor and / or an alloy composition within the material layer precursor 10 to the chamber apparatus 204. Examples of suitable dopant-containing material layer precursors include n-type dopant-containing material layer precursors, such as compounds containing phosphorus (P) or arsine (As), and n-type dopant-containing material layer precursors, such as compounds containing boron (B); examples of suitable alloy compositions include germanium-containing compounds, such as, by way of non-limiting example, germanium (GeH4).

[0036] It is contemplated that the precursor source 202 can be configured to deliver an etchant to the chamber arrangement 204, which can be co-flowed with the material layer precursor or provided to the chamber arrangement 204 as a separate flow. Examples of suitable etchants include halogen-containing compounds such as hydrochloric acid (HCl) and chlorine (Cl2) and fluorine-containing compounds such as hydrofluoric acid (HF). It is also contemplated that the precursor source can be configured to deliver a diluent or carrier fluid (e.g., a gas) to the chamber arrangement 204. For example, the precursor source 202 can be configured to deliver one or more of the following: hydrogen (H2), nitrogen (N2), a noble gas, or a mixture comprising one or more of the foregoing gases. The carrier or diluent fluid can be delivered to the chamber arrangement together with the material layer precursor 10 or separately, such as a purge fluid flow.

[0037] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. The substrate can be in any form, such as a powder, a plate, or a workpiece. The substrate can be made of semiconductor materials, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). As an example, a substrate in powder form may have applications in pharmaceutical manufacturing. A porous substrate may include a polymer. Examples of workpieces may include medical devices (such as stents and syringes), jewelry, tool devices, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc. The continuous substrate may extend beyond the boundaries of the processing chamber where the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates can include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundled continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). The continuous substrate can also include a carrier or sheet on which the discontinuous substrate is mounted.

[0038] refer to Figure 2 , shows a chamber arrangement 204 and a controller 208 according to an example of the present disclosure. In the example shown, the chamber arrangement 204 has a single wafer cross-flow architecture 218 and includes a chamber body 220, an injection flange 222, an exhaust flange 224, an upper heater element array 226, a lower heater element array 228, and a pyrometer 230. In the illustrated example, the chamber arrangement 204 also includes a divider 232, a substrate support 212, a star member 234, and a drive assembly 100. Although shown and described herein as having a particular arrangement and architecture, it should be understood and appreciated that the chamber arrangement 204 can have a different arrangement in other examples, such as a multi-wafer cross-flow arrangement (e.g., a small batch architecture), and still be within the scope of the present disclosure.

[0039] The chamber body 220 is formed of a ceramic material 236, extends between an injection end 238 and a longitudinally opposed exhaust end 240, and defines a processing volume within an interior 242 of the chamber body 220. The injection flange 222 abuts the injection end 238 of the chamber body 220 and positions the precursor source 202 ( Figure 1 The exhaust flange 224 is adjacent to the exhaust end 240 of the chamber body 220 and fluidly couples the processing space within the interior 242 of the chamber body 220 to the exhaust source 206 ( Figure 1). In some examples, the ceramic material 236 can be a transparent material, such as a material that is transparent to electromagnetic radiation in the infrared band, such as quartz or sapphire. According to some examples, the chamber body 220 can have a plurality of external ribs 244. In such examples, the external ribs 244 can extend laterally around the outer surface of the chamber body 220. In such examples, the external ribs 244 can be further longitudinally spaced apart from each other between the injection end 238 and the discharge end 240 of the chamber body 220. It is contemplated that the injection flange 222 can be as shown and described in U.S. Patent No. 11,053,591 filed by Ma et al. on August 6, 2018, the contents of which are incorporated herein by reference in their entirety. It is also contemplated that the discharge flange 224 can be as shown and described in U.S. Patent No. 10,612,136 filed by Sreeram et al. on June 29, 2018, the contents of which are incorporated herein by reference in their entirety.

[0040] The upper heater element array 226 is supported above the chamber body 220 and is configured to transfer heat into the interior 242 of the chamber body 220, for example, radiatively using electromagnetic radiation having one or more wavelengths within the infrared band that is transmitted within the interior 242 of the chamber body 220 by the ceramic material 236 forming the chamber body 220. In some examples, the upper heater element array 226 can include a plurality of filament-type heater elements, such as linear lamps, extending laterally above the chamber body 220 and longitudinally spaced apart from one another between the injection end 238 and the discharge end 240 of the chamber body 220. According to some examples, the upper heater element array 226 can include one or more bulb-type heater elements supported above the chamber body 220. It is contemplated that the lower heater element array 228 is similar to the upper heater element array 226 and is additionally supported below the chamber body 220. A pyrometer 230 may be supported above the chamber body 220 and configured to control heat transfer into the interior 242 of the chamber body 220 , such as by being operably coupled to either (or both) the upper and lower heater element arrays 226 and 228 via the controller 208 .

[0041] The partition 232 is formed of an opaque material 246 (e.g., a material that is opaque to electromagnetic radiation in the infrared band) and is disposed within the interior 242 of the chamber body 220. The partition 232 can further divide the interior 242 of the chamber body 220 into an upper chamber 248 (which can include, in whole or in part, a processing volume) and a lower chamber 250. It is contemplated that the partition 232 further defines a partition hole 252 therethrough, and that the partition hole 252 fluidly couples the upper chamber 248 to the lower chamber 250. In certain examples, the opaque material 246 can include a ceramic material, such as silicon carbide in a coating or block form. According to certain examples, the opaque material 246 can include a block carbonaceous material, such as pyrolytic carbon or graphite. It is also contemplated that the opaque material 246 can include a combination of the foregoing materials and still be within the scope of the present disclosure.

[0042] The substrate support 212 can be formed of an opaque material (e.g., opaque material 246) and disposed within the interior 242 of the chamber body 220. In this regard, it is contemplated that the substrate support 212 is supported within a divider aperture 252 and along a rotational axis 254, and is operably associated with the drive assembly 100. The operable coupling can be via a star member 234, which can be formed of a ceramic (e.g., ceramic material 236) and disposed along the rotational axis 254. The star member 234 can be further disposed within the lower chamber 250, rotationally fixed relative to the substrate support 212 as it rotates about the rotational axis 254, and couples the substrate support 212 to the drive assembly 100. In some examples, the substrate support 212 can include a susceptor body. According to certain examples, the chamber arrangement 204 can further include a plurality of lift pins slidably received within the substrate support 212, which can cooperate with a lift pin actuator and a gate valve and substrate transfer robot to place a substrate (e.g., substrate 2) on and remove it from the substrate support 212. Examples of suitable lift pins and lift pin actuators include those shown and described in co-pending U.S. patent application Ser. No. 18 / 397,372, filed by Evans et al. on December 27, 2023, the contents of which are incorporated herein by reference in their entirety.

[0043] The controller 208 may be configured to control the electromagnetic levitation L and rotation R of the substrate support 212 within the chamber body 220 using the drive assembly 100, and in this regard may include a device interface 260, a processor 262, a user interface 264, and a memory 266. The device interface 260 may couple the controller 208 to the drive assembly 100, and / or the semiconductor processing system 200 ( Figure 12 and 3. The processor 262 is coupled to the device interface 260, is operatively coupled to the user interface 264 to receive user input and / or provide user output therethrough, and is configured to communicate with the memory 266. The memory 266 includes a non-transitory machine-readable medium having a plurality of program modules 268 recorded thereon, the program modules 268 containing instructions that, when read by the processor 262, cause the processor 262 to perform certain operations. These operations include material layer deposition method 300 ( Figure 7 Although shown and described herein as having a particular architecture, it should be understood and appreciated that the controller 208 may have a different architecture (e.g., a distributed computing architecture) in other examples of the present disclosure and still be within the scope of the present disclosure.

[0044] refer to Figure 3-5 , shows a drive assembly 100 according to an example of the present disclosure. Figure 3 As shown, the drive assembly 100 can be configured to be in the chamber body 220 ( Figure 1 The drive assembly 100 includes at least one of an electromagnetically levitated L and electromagnetically rotated R substrate support 212 within the drive assembly 100 and may include, in this regard, a shaft member 102, a shaft support 104, one or more first permanent magnets 106, and one or more second permanent magnets 108. In the example shown, the drive assembly 100 also includes a stator body 110, a first plurality of windings 112, a second plurality of windings 114, and a sensor 116. Although shown and described herein as having certain elements and a particular arrangement, it should be understood and appreciated that the drive assembly 100 may include additional elements and / or omit elements shown and described herein, and / or have an arrangement different from that shown and described herein, and still be within the scope of the present disclosure.

[0045] The shaft member 102 may be formed of a ceramic material 122 and have a star end 124 and a drive end 126 disposed along the axis of rotation 254. It is contemplated that when assembled to the chamber assembly 204 ( Figure 225 ), the star end 124 of the shaft member 102 can be disposed within the lower chamber 250 of the chamber body 220, and the drive end 126 can be supported below the chamber body 220 at a position below the chamber body 220. The drive end 126 of the shaft member 102 can be further axially offset from the star end 124 along the rotational axis 254. The star end 124 of the shaft member 102 can be configured to carry the substrate support 212, for example, via the star member 234, so that the shaft member 102 is rotationally fixed relative to the substrate support 212 about the rotational axis 254. In some examples, the ceramic material 122 forming the shaft member 102 can include a transparent material, such as a material transparent to electromagnetic radiation in the infrared band, such as quartz or sapphire. According to some examples, the shaft member 102 can consist of (or consist essentially of) the ceramic material 122. As will be appreciated by those skilled in the art in light of this disclosure, forming the shaft member 102 from a material that is transparent to electromagnetic radiation in the infrared band can improve deposition onto the substrate 2 (e.g., by simplifying temperature control of the substrate support 212 and, thereby, the substrate 2). Figure 1 The material layer 4 (shown) Figure 1 uniformity as shown).

[0046] In some examples, the star end 124 of the shaft member 102 may have a shaft coupler 128 ( Figure 4 ). In such an example, the shaft coupler 128 can be configured to carry the star member 234 and, thereby, the substrate support 212. In this regard, the shaft coupler 128 can removably seat the star member 234 and, thereby, the substrate support 212 thereon. As will be appreciated by those skilled in the art in light of this disclosure, the shaft coupler 128 including the star end 124 of the shaft member 102 enables the star member 234 to be removably seated on the star end 124 of the shaft member 102. Advantageously, removably seating the star member 234 on the star end 124 of the shaft member 102 can, in turn, limit the deposition of the material layer 4 ( Figure 1 ) by changing the properties of the chamber body 220 ( Figure 2 shown) of the upper chamber 248 ( Figure 1 The processing volume defined within can be relatively small and / or facilitates the material layer precursor 10 ( Figure 1 As shown) laminar flow passes through.

[0047] In some examples, the star member 234 can be inseparably secured to the star end 124 of the shaft member 102, for example, at a fusion joint or weld 118. In such examples, the shaft member 102, the substrate support 212, and the star member 234 can be inseparable from one another. As will also be appreciated by those skilled in the art in light of this disclosure, inseparably securing the star member 234 to the star end 124 of the shaft member 102 can simplify assembly of the chamber apparatus 204, for example, by eliminating the need to form a shaft coupling on the shaft member 102 whose geometry is selected such that the star member 234 is located within the interior 242 ( Figure 2 The position on the shaft member 102 within (as shown) is repeatable.

[0048] like Figure 4 As shown, the drive end 126 of the shaft member 102 is configured to be seated in the shaft bracket 104 and, in this regard, may define an anti-rotation feature 130. In some examples, the anti-rotation feature 130 may include a spline or a groove. According to some examples, the anti-rotation feature 130 may include a through hole. In such an example, the shaft bracket 104 may define corresponding splines therein, or be configured to receive corresponding fasteners therein to secure the shaft bracket 104 relative to the shaft member 102 for rotation about the rotation axis 254. As will be understood by those skilled in the art, the anti-rotation feature 130 enables the shaft bracket 104 to be aligned with the shaft member 102 defined by the chamber body 220 ( Figure 2 The through portion 270 (shown) is defined Figure 2 As shown) before the shaft member 102 is placed in the shaft bracket 104, thereby facilitating the chamber device 204 ( Figure 1 shown).

[0049] The shaft support 104 may be formed of a magnetically conductive material 132 and configured to receive the drive end 126 of the shaft member 102 therein such that the shaft support 104 is rotationally fixed relative to the shaft member 102 about the axis of rotation 254 ( Figure 2 ). The shaft support 104 may be further configured to rotate R about the axis of rotation 254 relative to the shaft member 102 and thereby the star member 234 and the substrate support 212 ( Figure 1134 and 136. In some examples, the shaft support 104 can have a first surface 134, a second surface 136, and an intermediate surface 138. In such examples, the first surface 134 can extend about the rotational axis 254 and define an axle seat 140 therein that is configured to receive the drive end 126 of the shaft member 102 therein. The second surface 136 can also extend about the rotational axis 254, further being axially offset from the first surface 134 and further axially spaced from the first surface 134 of the shaft support 104. The intermediate surface 138 can extend about the rotational axis 254, further coupling the second surface 136 to the first surface 134, and further being substantially parallel to the rotational axis 254.

[0050] In some examples, the radial width of the second surface 136 of the shaft support 104 can taper axially along the rotational axis 254 and in a direction opposite the shaft member 102. In this regard, the second surface 136 can define a major radial width 142 proximate the first surface 134 and a minor radial width 144 distal from the first surface 134 of the shaft support 104. The major radial width 142 of the second surface 136 can be greater than the minor radial width 144 of the second surface 136. The minor radial width 144 can, in turn, be axially separated from the first surface 134 of the shaft support 104, for example, by either (or both) the major radial width 142 and the intermediate surface 138 of the shaft support 104. According to some examples, the second surface 136 of the shaft support 104 can terminate at a distal end 146. The distal end 146 can be disposed along the rotational axis 254 and, in some examples, intersect the rotational axis 254. Advantageously, the tapered shape of the second surface 136 can enable the shaft support 104 to self-center within the stator body 110, such as during a maintenance event where the shaft support 104 can be placed within the hollow interior 156 of the stator body 110, where the shaft support 104 and stator body 110 cooperate to facilitate removal and replacement of the substrate support 212 from the drive assembly 100.

[0051] Continue to refer to Figure 4, one or more first permanent magnets 106 are formed of a magnetic material 148 and disposed in the shaft support 104. The one or more first permanent magnets 106 can be further rotationally fixed R relative to the shaft support 104 about the axis of rotation 254. It is contemplated that the one or more first permanent magnets 106 can be axially offset from the star end 124 of the shaft member 102 and / or radially offset from the axis of rotation 254, the one or more first permanent magnets 106 thereby being configured to electromagnetically rotate the substrate support 212 carried on the star end 124 of the shaft member 102 about the axis of rotation 254 in cooperation with the first plurality of windings 112. In certain examples, the one or more first permanent magnets 106 can be axially disposed between the first surface 134 and the second surface 136 of the shaft support 104 to electromagnetically rotate the shaft support 104 (and thereby, via the substrate support 212 of the shaft member 102) about the axis of rotation 254. In another aspect, the one or more first permanent magnets 106 can be one of a plurality of first permanent magnets 106 distributed circumferentially about the axis of rotation 254 to drive the shaft support 104 and, thereby, the substrate support 212 about the axis of rotation 254. In some examples, the magnetic material 148 forming the one or more first permanent magnets 106 can include a rare earth element, such as, for example, a neodymium or samarium-cobalt composition, as non-limiting examples. As will be understood by those skilled in the art in light of this disclosure, forming the one or more first permanent magnets 106 from a rare earth element imparts a relatively high remanence to the one or more first permanent magnets 106 relative to the mass of the one or more first permanent magnets 106, thereby enabling the drive assembly 100 to have a lower center of gravity than would otherwise be possible.

[0052] The one or more second permanent magnets 108 can be formed of a magnetic material 150 and disposed in the shaft support 104. The one or more second permanent magnets 108 can also be rotationally fixed R relative to the shaft support 104 about a rotation axis 254 to electromagnetically levitate the substrate support 212 carried by the star end 124 of the shaft member 102 along the rotation axis 254. In some examples of the present disclosure, the one or more second permanent magnets 108 can also be separated from the star end 124 of the shaft member 102 by the one or more first permanent magnets 106, with the one or more second permanent magnets 108 proximate the end 146 of the shaft support 104. In some examples, one or more second permanent magnets 108 can be axially arranged between the major radial width 142 and the minor radial width 144 defined by the second surface 136 of the shaft support 104, for example, at a location where the second surface 136 radially overlaps the one or more second permanent magnets 108, to axially suspend the shaft support 104 (and thereby, via the substrate support 212 of the shaft member 102) along the rotation axis 254 in cooperation with the second plurality of windings 114. In this regard, the one or more second permanent magnets 108 can be arranged along the rotation axis 254, for example, such that the rotation axis 254 intersects the one or more second permanent magnets 108. In some examples, the magnetic material 150 can have a composition substantially the same as that of the magnetic material 148. According to some examples, the magnetic material 150 can have a composition different from that of the magnetic material 150, for example, a material having a lower remanence than that of the magnetic material 148, such as a ferromagnetic material. As will be appreciated by those skilled in the art in light of the present disclosure, this can also enable the drive assembly 100 to have a relatively low center of gravity.

[0053] Reference again Figure 4 , the stator body 110 may be formed of a magnetically permeable material 152 and configured to rotate relative to the chamber body 220 ( Figure 2 As shown) is fixed, for example, with the through portion 270 ( Figure 2154 and the second plurality of windings 114. The stator body 110 is configured to receive the shaft support 104 (at least partially) therein and to support either (or both) the first plurality of windings 112 and the second plurality of windings 114. In this regard, it is contemplated that the stator body 110 has an opening 154 and a hollow interior 156 terminating in a tapered recess 158. The opening 154 is opposite the chamber body 220 and is sized to receive the shaft support 104 therethrough and is in communication with the hollow interior 156. The hollow interior 156, in turn, extends about the axis of rotation 254 and terminates in the tapered recess 158. The tapered recess 158 can be conjugate in shape with the second surface 136 of the shaft support 104, and the stator body 110 is thus configured to position the shaft support 104 therein with the distal end 146 of the shaft support 104 and the shaft member 102 coaxial with the rotation axis 254. As will be appreciated by those skilled in the art in light of this disclosure, this can limit (or entirely prevent) movement of the substrate support 212 and the spacer 232 ( Figure 2 In some examples, the magnetically permeable material 152 can include a non-magnetic material, such as a polymer material or an aluminum-containing material. As will be appreciated by those skilled in the art in light of this disclosure, forming the stator body 110 from such a material can simplify the manufacture of the drive assembly 100 and simplify the electromagnetic coupling of the first plurality of windings 112 and the second plurality of windings 114 to the one or more first permanent magnets 106 and the one or more second permanent magnets 108, respectively.

[0054] like Figure 5As shown, the first plurality of windings 112 can be configured to electromagnetically rotate the shaft support 104 (and thereby the substrate support 212 of the shaft member 102) about an axis of rotation 254 and can be circumferentially distributed about the axis of rotation 254. In some examples, the first plurality of windings 112 and the one or more first permanent magnets 106 can occupy a common axial position 160, in which case the first plurality of windings 112 radially overlaps the one or more first permanent magnets 106. According to some examples, the first plurality of windings 112 can be radially offset from the shaft support 104 and configured to exert a rotational force (e.g., torque) on the shaft support 104 via the one or more first permanent magnets 106. It is contemplated that the first plurality of windings 112 is further electrically connected to a power source 162, and that the power source 162 is, in turn, configured to provide a rotational current 168 to the first plurality of windings 112 to electromagnetically rotate the shaft support 104 and thereby the substrate support 212 about the axis of rotation 254 at a predetermined rotational speed. In some examples, connection of the first plurality of windings 112 to the power source 162 may be through a controller 208 , which in turn is configured to throttle the flow of the rotational current 168 through the first plurality of windings 112 to control the rotational speed of the substrate support 212 about the rotational axis 254 .

[0055] In some examples, the connection of the first plurality of windings 112 to the power source 162 via the controller 208 may be distributed (e.g., individually controllable). For example, the controller 208 may operatively couple the power source 162 to individual windings of the first plurality of windings 112 via the plurality of first winding current drivers 174. The controller 208 is thereby configured to control the separator aperture 252 (e.g., the current source 162) by individually throttling the flow of the rotating current 168 to the individual windings of the first plurality of windings 112 during rotation of the substrate support 212 about the rotation axis 254. Figure 2 ) within the chamber body 220). Advantageously, throttling the flow of the spinning current 168 to individual windings in the first plurality of windings 112 enables compensation for the runout and wobble of the substrate support 212, for example using a feedforward generated from a characterization of the runout and wobble of the substrate support 212 during rotation R within the chamber body 220 under nominal (e.g., as-built) conditions. As will be understood by those skilled in the art in light of this disclosure, compensating for the runout and wobble using the first plurality of windings 112 enables relaxation of the runout and wobble formed in the substrate support 212 ( Figure 1 ) and / or the tolerances of the seat features on the star member 234, thereby simplifying the manufacturing and assembly of the substrate support 212 and / or the star member 234 and the chamber arrangement 204.

[0056] The second plurality of windings 114 is configured to electromagnetically suspend the shaft support 104 (and thereby via the substrate support 212 of the shaft member 102) along the rotational axis 254. In this regard, the second plurality of windings 114 may be axially overlapped by the shaft support 104, for example, such that the shaft support 104 axially aligns the second plurality of windings 114 with the chamber body 220 ( Figure 2 254). In some examples, the second plurality of windings 114 can be arranged in a grid 164 that intersects the axis of rotation 254. The grid 164 can be planar and substantially orthogonal relative to the axis of rotation 254. According to some examples, the second plurality of windings 114 can be distributed with a circumference 166 extending around the axis of rotation 254 at an axial position where the shaft support 104 axially overlaps the second plurality of windings 114. It is also contemplated that, according to some examples, the plurality of windings 114 can be arranged in a grid 164 overlapped by the shaft support 104, wherein a group of the second plurality of windings 114 is arranged circumferentially around the axis of rotation 254.

[0057] The second plurality of windings 114 can be electrically connected to a power supply 162. The power supply 162 can, in turn, be configured to provide a levitation current 170 to the first plurality of windings 112 to electromagnetically levitate the spindle support 104 and, thereby, the substrate support 212, along the rotational axis 254. In some examples, the connection of the second plurality of windings 114 to the power supply 162 can be through a controller 208, which can, in turn, be configured to throttle the flow of the levitation current 170 through the second plurality of windings 114 to control the movement of the substrate support 212 along the rotational axis 254 and within the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2 According to some examples, the second plurality of windings 114 can be allocated (e.g., individually controllable) via the connection of the controller 208 to the power source 162, which can be individually operatively coupled to the individual windings in the second plurality of windings 114 via the plurality of second winding current drivers 176, thereby being configured to control the separator aperture 252 ( Figure 2 Advantageously, this enables electromagnetic levitation of the shaft support 104 and the substrate support 212 during rotation about the rotation axis 254 and within the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2 The jitter and / or wobble compensation (or correction) within the PCB is shown.

[0058] Refer again Figure 3 And continue to refer to Figure 5, the sensor 116 can be opposite the shaft support 104 and configured to generate a signal 172 including information indicating at least one of an axial position of the shaft support 104 along the rotation axis 254 and a rotational position of the shaft support 104 about the rotation axis 254 during a rotation R of the shaft support 104 about the rotation axis 254. In this regard, the sensor 116 can be disposed in the stator body 110. In another aspect, the sensor 116 can be disposed in the stator body 110 such that the second surface 136 of the shaft support 104 is within a field of view of the sensor 116. The sensor 116 can be configured to communicate with the controller 208, for example, via a wired or wireless link 216, to provide the signal 172 to the controller 208. In some examples, the sensor 116 can include an optical sensing device, such as an interferometer. According to some examples, the sensor 116 can include an electrical sensing device, such as a Hall effect sensor. It is also contemplated that the sensor 116 may be configured to include in the signal 172 information indicative of runout and / or wobble of the spindle 104 , and thereby the substrate support 212 , during the rotation R about the rotation axis 254 .

[0059] The controller 208 may be operatively connected to the drive assembly 100 and may be responsive to the information recorded in the memory 266 ( Figure 2 ) on a plurality of program modules 268 ( Figure 2 ) to use the drive assembly 100 in the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2 254) and about the rotation axis 254. In this regard, it is contemplated that the controller 208 can control the flow of the rotational current 168 to the first plurality of windings 112 to rotate the shaft support 104, and thereby the substrate support 212 via the shaft member 102 and the star member 234, about the rotation axis 254. The instructions can further cause the controller 208 to levitate the substrate support 212 within the interior 242 of the chamber body 220 and along the rotation axis 254 using the drive assembly 100. In this further regard, the controller 208 can control the flow of the levitating current 170 to the second plurality of windings 114 to levitate the shaft support 104, and thereby the substrate support 212 via the shaft member 102 and the star member 234, along the rotation axis 254.

[0060] In some examples, the controller 208 may receive a signal 172 from the sensor 116. In such examples, the signal 172 may include information indicating at least one of an axial position of the substrate support 212 along the rotation axis 254 during a rotation R of the substrate support 212 about the rotation axis 254 and a rotational position of the substrate support 212 about the rotation axis 254 during a rotation R of the substrate support 212 about the rotation axis 254. It is contemplated that the controller 208 may use the signal 172 to control either (or both) the axial position and the rotational position (e.g., speed, acceleration, and deceleration) of the substrate support 212 along the rotation axis 254 during a rotation R of the substrate support 212 about the rotation axis 254. In this regard, the controller 208 may receive a predetermined rotational speed of the substrate support 212 about the rotation axis 254, use the signal 172 to determine the rotational speed of the substrate support 212 within the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2 254 and the interior 242 of the chamber body 220, and when the determined axial position of the substrate support 212 along the rotational axis 254 differs from the predetermined axial position by more than a predetermined amount, increase (or decrease) the levitation current 170 provided to the second plurality of windings 114.

[0061] In some examples, the signal 172 may include an indication that the substrate support 212 is in the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2 104 during a rotation R of the chamber body 220 about the rotation axis 254. The controller 208 may further include information regarding at least one of runout (e.g., axial runout and / or radial runout) and wobble of the substrate support 212 during a rotation R of the chamber body 220 about the rotation axis 254. The controller 208 may further include information regarding at least one of runout (e.g., axial runout and / or radial runout) and wobble of the substrate support 212 during a rotation R of the chamber body 220 about the rotation axis 254. It is contemplated that the controller 208 may use the signal 172 to control either (or both) the runout and wobble of the substrate support 212 during a rotation R of the chamber body 220 about the rotation axis 254. In this regard, the controller 208 may receive a predetermined runout representation of the substrate support 212 about the rotation axis 254 (e.g., runout reported by the sensor 116 during a rotation of the shaft support 104 when the runout of the substrate support 212 carried by the shaft member 102 is within a predetermined amount), and use the signal 172 to determine whether the substrate support 212 is within the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2) about the rotation axis 254, and when the determined runout differs from the predetermined runout characteristic by more than a predetermined amount, selectively increasing the spinning current 168 and / or the levitation current 170 provided to individual windings (e.g., a subset) of the first plurality of windings 112 and / or the second plurality of windings 114. According to certain examples, the controller 208 may receive a predetermined wobble characteristic of the substrate support 212 about the rotation axis 254 (e.g., wobble reported by the sensor 116 during rotation of the shaft support 104 when the wobble of the substrate support 212 carried by the shaft member 102 is within a predetermined amount), determine using the signal 172 whether the substrate support 212 is within the chamber body 220 ( Figure 2 shown) inside 242 ( Figure 2 , and selectively increasing the spinning current 168 and / or the levitation current 170 provided to individual windings (e.g., subsets) in the first plurality of windings 112 and / or the second plurality of windings 114 when the determined oscillation differs from a predetermined oscillation characterization by more than a predetermined amount.

[0062] refer to Figures 6 to 10 , shows a material layer deposition method 300. Figure 6 As shown, the material layer deposition method 300 may include electromagnetically levitating a substrate support disposed within a chamber body along a rotational axis using a drive assembly, such as along the rotational axis 254 ( Figure 2 shown) in the chamber body 220 ( Figure 2 ) within the suspended substrate support 212 (shown) Figure 2 ), as shown in block 302. The material layer deposition method 300 may further include placing a substrate on a substrate support and within the chamber body, such as substrate 2 (as shown in FIG. Figure 2 ), as shown in block 304. The material layer deposition method 300 may further include heating the substrate within the chamber body to a predetermined material layer deposition temperature and electromagnetically rotating the substrate within the chamber body about the rotation axis using the drive assembly, as shown in blocks 306 and 308. The material layer deposition method 300 may further include exposing the substrate to a material layer precursor within the chamber body, for example, exposing the substrate 2 ( Figure 2 ) is exposed to the material layer precursor 10 ( Figure 2 As shown), and using a material layer precursor to deposit a material layer onto a substrate, for example, using a material layer precursor to deposit a material layer 4 ( Figure 2 ), as shown in blocks 310 and 312. As shown by arrow 314, the substrate can then be removed from the chamber body so that another material layer can be deposited onto another substrate. The material layer deposited onto the substrate can be used to fabricate a semiconductor device, such as a memory or logic device having a three-dimensional (3D) architecture. For example, the material layer can be used to form a 3D DRAM device or logic device having a gate-all-around architecture (GAA).

[0063] Electromagnetically levitating 302 the substrate support may include applying a levitation current to a second plurality of windings separated from the substrate support by an axis bracket and an axis member, such as applying a levitation current 170 ( Figure 5 ) is applied to the second plurality of windings 114 ( Figure 3 ), also shown in block 302. The electromagnetic levitation 302 substrate support may include the use of one or more permanent magnets (e.g., one or more second permanent magnets 108 (e.g., Figure 3 302 . The electromagnetic levitation 302 substrate support can be electromagnetically levitated using a plurality of program modules recorded on a memory of a controller (e.g., controller 208 ... Figure 2 Memory (shown) Figure 2 ) on a plurality of program modules 268 ( Figure 2 )) is implemented according to the instructions recorded in one or more of the instructions, as further shown in block 302.

[0064] Positioning 304 the substrate on the substrate support may include opening a gate valve coupling a substrate transfer robot to the chamber body, such as a gate valve coupling the substrate transfer robot to the chamber body, and transferring a single substrate into the chamber body, as also shown in block 304. The gate valve may then be closed, and rotation of the substrate support and the substrate on the substrate support may be initiated, as further shown in block 304. Positioning the substrate—and removing the substrate after depositing a layer of material onto the substrate—may be accomplished using lift pins slidably received within the substrate support. Positioning 304 the substrate on the substrate support may be accomplished using a controller, such as using instructions in one or more of a plurality of program modules recorded in memory, as further shown in block 304.

[0065] Heating 306 the substrate to a predetermined material layer deposition temperature may include radiatively transferring heat into the interior of the chamber body, also as shown at block 306. Radiative heating may be achieved by generating electromagnetic radiation in the infrared band from heater elements supported external to the chamber body and transmitting it through the ceramic material forming the chamber body, such as using the upper heater element array 226 ( Figure 2 shown) and / or lower heater element array 228 ( Figure 2 ) is generated and transported through a ceramic material 236 ( Figure 2), as further shown in block 306. Heating 306 the substrate within the chamber body may be accomplished using a controller, such as using instructions recorded in one or more of a plurality of program modules recorded on a memory of the controller, as further shown in block 306.

[0066] Electromagnetically rotating 308 the substrate support about the rotation axis may include applying a rotational current to a first plurality of windings distributed circumferentially about a shaft support of the drive assembly, such as applying the rotational current 168 ( Figure 5 ) is applied to the first plurality of windings 112 ( Figure 3 ), also shown in block 308. Electromagnetically rotating 308 the substrate support may include rotating the substrate support via one or more first permanent magnets (e.g., one or more first permanent magnets 106 ( Figure 3 The electromagnetic rotational force (e.g., torque) is applied to the shaft support by one of the electromotive force (e.g., one of the electromotive force and the rotational force) as further shown in block 302. In some examples, the electromotive force may not have an out-of-plane component, i.e., no force component outside a plane substantially orthogonal to the axis of rotation, as further shown in block 308. According to some examples, the electromotive force may have an out-of-plane component, as further shown in block 308. In such examples, the out-of-plane component of the electromotive force may be selected to limit (or eliminate) bouncing and / or wobbling of the substrate support during rotation about the axis of rotation, as further shown in block 308. Electromagnetically rotating 308 the substrate may be performed using a controller, such as, for example, using instructions recorded in one or more of a plurality of program modules recorded in memory, as further shown in block 308.

[0067] Exposing the substrate 310 to the material layer precursor may include exposing the substrate to a silicon-containing material layer precursor, such as a non-chlorinated silicon-containing material layer precursor, such as silane (SiH4) or disilane (Si2H6), and / or a chlorinated silicon-containing material layer precursor, such as dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si), as shown in block 316. Exposing the substrate 310 to the material layer precursor may include exposing the substrate to a dopant-containing material layer precursor or an alloy-containing material layer precursor, such as an n-type dopant-containing material layer precursor including arsine (As) or phosphorus (P) or a p-type dopant-containing material layer precursor including boron (B), and a germanium-containing material layer precursor, such as lime germanium (GeH4), as shown in block 318. Exposing the substrate 310 to the material layer precursor may include exposing the substrate to an etchant, such as a chlorinated etchant, such as hydrochloric acid (HCl) or chlorine (Cl2), or a fluorinated composition, such as hydrofluoric acid (HF), as shown in block 320. Exposing the substrate 310 to the material layer precursor may include co-flowing a carrier or diluent fluid with the material layer precursor (e.g., hydrogen (H2) or nitrogen (N2)), as shown in block 322. It is contemplated that exposing the substrate 310 to the material layer precursor may include exposing the substrate to a mixture including a silicon-containing material layer precursor, a dopant-containing material layer precursor, an etchant, and the carrier or diluent fluid, also as shown in block 310. It is also contemplated that exposing the substrate 310 to the material layer precursor may be accomplished using a controller, such as using instructions recorded in one or more of a plurality of program modules recorded on a memory, as further shown in block 310.

[0068] Depositing 312 the material layer onto the substrate may include depositing the material layer epitaxially with the substrate, also as shown in block 312. Depositing 312 the material layer may include depositing a silicon-containing material layer, such as an intrinsic silicon material layer or silicon-germanium and a doped silicon-containing material layer, as further shown in block 312. Depositing 312 the material layer may include controlling an axial position of the substrate support along the rotation axis during rotation of the substrate support about the rotation axis, as shown in block 324. Depositing 312 the material layer onto the substrate may include controlling a rotational speed of the substrate support about the rotation axis during rotation about the rotation axis, as shown in block 326. Depositing 312 the material layer onto the substrate support may include controlling either (or both) bounce and wobble of the substrate support within the chamber body during rotation of the substrate support about the rotation axis, as shown in blocks 328 and 330. It is contemplated that a controller may be used to control one or more of axial position, rotational position, jump, and swing during deposition of a material layer, for example using instructions recorded in one or more of a plurality of program modules recorded on a memory, also as shown in blocks 324-330.

[0069] like Figure 7As shown, controlling 324 the axial position of the substrate support within the chamber body may include receiving a signal indicative of the axial position of the substrate support within the chamber body along the axis of rotation, such as signal 172 ( Figure 5 ), as shown in block 332. The axial position of the substrate support may be determined using information indicating the axial position of the substrate support along the axis of rotation (e.g., using a controller), as shown in block 334. The determined axial position is compared to a predetermined axial position value, e.g., in the user interface 264 ( Figure 2 The axial position of the substrate support may be monitored based on a predetermined axial position value received at a location (as shown in block 336). When the comparison indicates that the axial height of the substrate support differs from the predetermined axial value by more than a predetermined amount, the axial position of the substrate support may be adjusted, as indicated by blocks 338 and 342 and arrow 340. Adjustment of the axial position of the substrate support may be accomplished by throttling the levitation current provided to the second plurality of windings, as indicated by block 344. Adjustment of the axial position of the substrate support may be accomplished upon receipt of a signal containing information indicating the axial position of the substrate support along the rotational axis and / or in real time during deposition of the material layer onto the substrate, as indicated by block 346. Monitoring of the axial position of the substrate support may continue thereafter, such as iteratively during deposition of the material layer onto the substrate, as indicated by arrow 348. When the determined axial position does not differ from the predetermined axial height by more than a predetermined amount, no adjustment of the axial height of the substrate support may be performed, as indicated by arrow 350.

[0070] like Figure 8 As shown, controlling 326 the rotational speed of the substrate support within the chamber body during rotation about the rotation axis may include receiving a signal indicative of the rotational speed of the substrate support within the chamber body during rotation about the rotation axis, such as signal 172 ( Figure 5), as shown in block 352. The rotational speed of the substrate support can be determined (e.g., using a controller) using information indicating the rotational speed of the substrate support during rotation about the rotational axis, as shown in block 354. It is contemplated that the determined rotational speed can be compared to a predetermined rotational speed (e.g., a predetermined rotational speed value received at a user interface), as shown in block 356, and when the determined rotational speed of the substrate support differs from the predetermined rotational speed value by more than a predetermined amount, the rotational speed of the substrate support can be adjusted, as shown in blocks 358 and 362 and arrow 360. Adjustment of the rotational speed of the substrate support can be accomplished by throttling the spinning current provided to the first plurality of windings, as shown in block 364. Adjustment of the rotational speed of the substrate support can be accomplished upon receipt of a signal containing information indicating the rotational speed of the substrate support about the rotational axis and / or in real time during deposition of the material layer onto the substrate, as shown in block 366. It is contemplated that monitoring of the rotational speed of the substrate support can continue after the aforementioned adjustment, such as iteratively during deposition of the material layer onto the substrate, as shown in arrow 368. It is also contemplated that when the determined rotational speed does not differ from the predetermined rotational speed value by more than a predetermined value, no adjustment may be made to the rotational speed of the substrate support, as indicated by arrow 370 .

[0071] like Figure 9 As shown, controlling 328 bounce of the substrate support within the chamber body during rotation about the rotation axis may include receiving a signal indicative of bounce of the substrate support within the chamber body during rotation about the rotation axis, such as signal 172 (e.g., Figure 5), as shown in block 372. The runout of the substrate support may be determined using information indicative of the runout of the substrate support during rotation about the rotation axis (e.g., using a controller), as shown in block 374. The determined runout may be compared to a predetermined runout value (e.g., a predetermined runout value received at a user interface), as shown in block 376, and when the determined runout of the substrate support differs from the predetermined runout value by more than a predetermined amount, the runout of the substrate support may be adjusted, as shown in blocks 378 and 382 and arrow 380. Adjustment of the runout of the substrate support may be achieved by throttling either (or both) the levitation spin current provided to an individual one of the first and second pluralities of windings, as shown in block 384. Adjustment of the runout of the substrate support may be accomplished upon receipt of a signal containing information indicative of the runout of the substrate support during rotation about the rotation axis and / or in real time during deposition of a material layer onto the substrate, as shown in block 386. It is contemplated that monitoring of substrate support runout may continue after the aforementioned runout adjustment, such as iteratively during deposition of a material layer onto the substrate, as indicated by arrow 388. It is also contemplated that when the determined runout does not differ from the predetermined runout value by more than a predetermined value, no adjustment may be made to the substrate support runout, as indicated by arrow 390. In some examples, adjusting the runout may include adjusting the axial runout, as indicated by block 392. According to some examples, adjusting the runout may include adjusting the radial runout, as indicated by block 394.

[0072] like Figure 10 As shown, controlling 330 the oscillation of the substrate support within the chamber body during rotation about the rotation axis may include receiving a signal indicative of the oscillation of the substrate support within the chamber body during rotation about the rotation axis, such as signal 172 ( Figure 5), as shown in block 396. The wobble of the substrate support may be determined using information indicative of the wobble of the substrate support during rotation about the rotation axis (e.g., using a controller), as shown in block 398. The determined runout may be compared to a predetermined wobble value (e.g., a predetermined wobble value received from a user interface), as shown in block 301, and when the determined wobble of the substrate support differs from the predetermined wobble value by more than a predetermined amount, the wobble of the substrate support may be adjusted, as shown in blocks 303-305 and arrow 307. The adjustment of the wobble of the substrate support may be accomplished by throttling either (or both) the levitation spin current provided to an individual one of the first and second pluralities of windings, as shown in block 309. The adjustment of the wobble of the substrate support may be accomplished in real time upon receiving a signal containing information indicative of the wobble of the substrate support during rotation about the rotation axis and / or during deposition of a material layer onto the substrate, as shown in block 311. It is contemplated that monitoring of the substrate support's wobble may continue after the aforementioned wobble adjustment, such as iteratively during deposition of a material layer onto the substrate, as indicated by arrow 313. It is also contemplated that no adjustment may be made to the substrate support's wobble when the determined wobble does not differ from the predetermined wobble value by more than a predetermined value, as indicated by arrow 315.

[0073] The substrate support may be rotated using a direct drive arrangement, such as a gear arrangement and transmission assembly that couples a rotation source to the substrate support. While generally acceptable for their intended purpose, such direct drives add cost and complexity to semiconductor processing systems. For example, direct drives may require relatively tight manufacturing and assembly tolerances for components coupling the rotation source to the substrate support, potentially limiting the throughput of the semiconductor processing system and / or requiring highly skilled maintenance and service personnel.

[0074] In examples described herein, an electromagnetic drive assembly is coupled to a substrate support in a semiconductor processing system. In certain examples of the present disclosure, the drive assembly may electromagnetically levitate the substrate support along a rotational axis within a chamber body of the semiconductor processing system. According to certain examples, the drive assembly may electromagnetically levitate the substrate support along the rotational axis and within the chamber body of the semiconductor processing system. It is also contemplated that, according to certain examples, the substrate support may be electromagnetically rotated about the rotational axis and electromagnetically levitated along the rotational axis within the chamber body of the semiconductor processing system. In further examples of the present disclosure, the drive assembly may be used to electromagnetically control either (or both) the bounce and the oscillation of the substrate support during rotation about the rotational axis and within the chamber body of the semiconductor processing system. Advantageously, the examples of the drive assembly described herein may simplify the manufacture of the semiconductor processing system and / or increase the yield of the semiconductor processing system by relaxing the manufacturing and / or assembly tolerances of the components coupling the substrate support to the drive assembly.

[0075] Although the present disclosure has been provided in the context of certain embodiments and examples, it will be understood by those skilled in the art that the present disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of embodiments and obvious modifications and equivalents thereof. In addition, although several variations of the embodiments of the present disclosure have been shown and described in detail, other modifications within the scope of the present disclosure will be apparent to those skilled in the art based on the present disclosure. It is also contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the present disclosure. It should be understood that the various features and aspects of the disclosed embodiments may be combined or substituted with each other to form variations of the embodiments of the present disclosure. Therefore, it is intended that the scope of the present disclosure should not be limited by the specific embodiments described above.

[0076] The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A drive assembly comprising: a shaft member having a star end and a drive end disposed along the axis of rotation; a shaft support that seats the drive end of the shaft member therein and is rotationally fixed relative to the shaft member about the axis of rotation; and a permanent magnet, which is accommodated in the shaft support and is rotationally fixed relative to the shaft support about the axis of rotation, wherein a permanent magnet is axially offset from the star end of the shaft member to at least one of electromagnetically levitate and electromagnetically rotate a substrate support carried on the star end of the shaft member.

2. The drive assembly according to claim 1, wherein: The shaft support has: a first surface extending about the axis of rotation and defining an axle seat therein; a second surface extending about the axis of rotation and axially offset from the first surface of the axle support; as well as An intermediate surface extends about the axis of rotation and couples the first surface of the shaft support to a second surface of the shaft support, wherein the second surface tapers between a major radial width proximate the intermediate surface and a minor radial width axially opposite the first surface of the shaft support.

3. The drive assembly according to claim 2, wherein: The permanent magnet is axially arranged between the first and second surfaces of the shaft support to electromagnetically rotate the shaft support, and thereby the substrate support, rotationally about the axis of rotation.

4. The drive assembly according to claim 2, wherein: The permanent magnet is axially disposed between a major radial width and a minor radial width defined by the shaft support to electromagnetically suspend the shaft support, and thereby the substrate support, along the rotational axis.

5. The drive assembly of claim 1 , further comprising a sensor opposite the shaft bracket and configured to acquire at least one of an axial position of the substrate support along the rotation axis and a rotational position of the substrate support during rotation about the rotation axis.

6. The drive assembly of claim 1 further comprising a stator body extending around the shaft support, the stator body being formed of a non-magnetic material, the stator body having a hollow interior terminating at a tapered recess, the stator body receiving the shaft support within the hollow interior of the stator body.

7. The drive assembly of claim 1 , further comprising a plurality of windings distributed circumferentially around the rotation axis, wherein The plurality of windings and the one or more permanent magnets occupy a common axial position.

8. The drive assembly of claim 1 further comprising a plurality of windings axially overlapped by the shaft support.

9. The drive assembly according to claim 8, wherein: The plurality of windings are at least one of (a) arranged in a grid and (b) distributed around a circumference covered by the shaft support.

10. The drive assembly according to claim 1, wherein: The shaft member includes a ceramic material.

11. A semiconductor processing system comprising: a chamber body having a hollow interior; The drive assembly of claim 1, wherein the shaft member extends into the chamber body such that the star-shaped end of the shaft member is disposed within the interior of the chamber body; a substrate support disposed within the interior of the chamber body and rotationally fixed about a rotational axis relative to a shaft member of the drive assembly; and a controller operatively connected to the drive assembly and responsive to instructions recorded on the memory: electromagnetically levitating the substrate support within the interior of the chamber body and along the rotational axis using a drive assembly; and The substrate support is electromagnetically rotated within the interior of the chamber body and about a rotational axis using a drive assembly.

12. The semiconductor processing system of claim 11, wherein: The permanent magnet is a first permanent magnet axially arranged between the first surface and the second surface of the shaft support, wherein the drive assembly further comprises: a second permanent magnet secured in the shaft support and disposed axially between a major radial width and a minor radial width defined by the shaft support; a first plurality of windings radially offset from the shaft support and configured to electromagnetically exert a rotational force on the shaft support via a first permanent magnet; a second plurality of windings axially offset from the shaft support and configured to electromagnetically exert an axial force on the shaft support via a second permanent magnet; The instructions recorded in the memory enable the controller to: electromagnetically rotating the substrate support using one or more first permanent magnets and a rotating current provided to a second plurality of windings; and The substrate support is electromagnetically levitated using one or more second permanent magnets and a levitation current provided to the first plurality of windings.

13. The semiconductor processing system of claim 11, further comprising a sensor disposed in communication with the shaft bracket and configured to provide a signal to the controller indicative of at least one of an axial position and a rotational position of the substrate support within the chamber body.

14. The semiconductor processing system of claim 13, wherein: The instructions further cause the controller to control at least one of an axial position of the substrate support along the rotational axis and a rotational speed of the substrate support about the rotational axis within the chamber body using the signal provided by the sensor.

15. The semiconductor processing system of claim 13, wherein: The instructions further cause the controller to use the signal provided by the sensor to control at least one of bounce and oscillation of the substrate support within the chamber body during rotation about the rotation axis.

16. A method of depositing a material layer onto a substrate, comprising: At a semiconductor processing system, the semiconductor processing system includes a substrate support disposed within an interior of a chamber body and seated on a drive assembly, the drive assembly including a shaft member having a star end and a drive end disposed along an axis of rotation; a shaft support housing the drive end of the shaft member therein and being rotationally fixed relative to the shaft member about the axis of rotation; and a permanent magnet disposed in the shaft support, being rotationally fixed relative to the shaft support about the axis of rotation, and being axially offset from the star end of the shaft member along the axis of rotation; placing a substrate on a substrate support; and while at least one of electromagnetically levitating the substrate support and electromagnetically rotating the substrate support using a permanent magnet and a plurality of windings electromagnetically coupled to the permanent magnet, heating the substrate to a predetermined material layer deposition temperature; exposing the substrate to a material layer precursor; and A material layer is deposited onto a substrate using a material layer precursor.

17. The material layer deposition method according to claim 16, further comprising: determining an axial position of the substrate support along the axis of rotation during rotation about the axis of rotation; comparing the determined axial position to a predetermined axial position; as well as During deposition of a layer of material onto the substrate, the axial height of the substrate support is adjusted when the determined axial position differs from the predetermined axial position by more than a predetermined amount.

18. The material layer deposition method according to claim 16, further comprising: determining a rotational speed of the substrate support about an axis of rotation during rotation about the axis of rotation; comparing the determined rotational speed of the substrate support to a predetermined rotational speed; as well as During deposition of a layer of material onto the substrate, a rotational speed of the substrate support is adjusted when the determined rotational speed differs from a predetermined rotational speed by more than a predetermined amount.

19. The material layer deposition method according to claim 16, further comprising: determining a runout of the substrate support about an axis of rotation during rotation about the axis of rotation; comparing the determined runout of the substrate support to a predetermined runout value; as well as During deposition of a layer of material onto the substrate, the runout of the substrate support is adjusted when the determined runout differs from a predetermined runout value by more than a predetermined amount.

20. The material layer deposition method according to claim 16, further comprising: determining a wobble of the substrate support about an axis of rotation during rotation about the axis of rotation; comparing the determined wobble of the substrate support to a predetermined wobble value; as well as During deposition of a layer of material onto the substrate, the swing of the substrate support is adjusted when the determined swing differs from a predetermined swing value by more than a predetermined amount.

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