Wafer de-bonding method and wafer de-bonding device

Abstract

The invention provides a wafer de-bonding method and a wafer de-bonding device, relates to the technical field of semiconductor equipment, and provides a wafer to be de-bonded, the wafer to be de-bonded comprises a first wafer and a second wafer which are attached to each other, and a bonding layer of the wafer to be de-bonded is formed between the first wafer and the second wafer. The chuck assembly adsorbs the wafer to be de-bonded; fluid is jetted to the edge of the bonding layer of the wafer to be de-bonded through a sprayer, so that a slit is formed in the edge of the bonding layer, and the slit is a de-bonding starting point; and the chuck assembly drives the first wafer and the second wafer to be gradually separated from the de-bonding starting point. According to the invention, the problem that the surface of the wafer is easy to damage when the metal blade is used for de-bonding the wafer is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a wafer debonding method and a wafer debonding device. Background Art

[0002] The current method of wafer debonding is to refer to Figure 1 , Figure 1 Figure a is a schematic diagram of the wafer debonding structure. Figure 1 Figure b is a schematic diagram of the wafer debonding process, refer to Figure 1 The current wafer debonding method includes the following steps: the upper chuck 11 and the lower chuck 12 vacuum absorb the wafers to be debonded, the upper chuck 11 vacuum absorbs the upper wafer 21 among the wafers to be debonded, and the lower chuck 12 vacuum absorbs the lower wafer 22 among the wafers to be debonded, there is a bonding layer between the upper wafer 21 and the lower wafer 22, and the blade 3 is to be inserted into the bonding layer; the blade 3 is slowly inserted into the bonding layer between the upper wafer 21 and the lower wafer 22, and the bonding layer at the insertion position of the blade 3 is debonded; the upper chuck 11 is moved, and the upper wafer 21 and the lower wafer 22 are separated from each other with the insertion position of the blade 3 as the starting point of debonding.

[0003] The above-mentioned metal blade debonding method has the following problems: First, directly inserting the metal blade into the bonding layer will cause damage to the wafer surface at the insertion position, resulting in particle contamination and even wafer scrapping; second, the insertion position of the metal blade is very likely to cause wafer fragmentation; finally, the metal blade has a service life and needs to be replaced frequently. The above three problems will affect the normal working time of the machine and the cost of the machine.

[0004] Therefore, there is an urgent need to develop a new wafer debonding method and wafer debonding device to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a wafer debonding method and a wafer debonding device, which solve the problem that the wafer surface is easily damaged when using a metal blade to debond the wafer.

[0006] To achieve the above objectives, in a first aspect, the present invention provides a wafer debonding method, comprising the following steps:

[0007] S0: providing a wafer to be debonded, wherein the wafer to be debonded comprises a first wafer and a second wafer bonded together, a bonding layer of the wafer to be debonded is formed between the first wafer and the second wafer, and a chuck assembly adsorbs the wafer to be debonded;

[0008] S1: using a nozzle to spray a fluid onto the edge of the bonding layer of the wafer to be debonded, so as to form a slit at the edge of the bonding layer, wherein the slit is a debonding starting point;

[0009] S2: The chuck assembly drives the first wafer and the second wafer to gradually separate from the debonding starting point.

[0010] The beneficial effect of the wafer debonding method of the present invention is that: a fluid is sprayed onto the edge of the bonding layer of the wafer to be debonded by using a nozzle to form a slit at the edge of the bonding layer, and the slit is the starting point of debonding. The chuck assembly drives the first wafer and the second wafer to gradually separate from the debonding starting point. Compared with the hard contact between the metal blade and the bonding layer of the wafer to be debonded, when the present invention uses fluid to debond the wafer to be debonded, the fluid will not cause damage to the wafer and will not generate particles due to wear; therefore, the present invention solves the problem of easy damage to the wafer surface when using a metal blade to debond the wafer.

[0011] Optionally, the nozzle includes a first nozzle and a second nozzle, the diameter of the first nozzle is smaller than the diameter of the second nozzle, and in step S1, the first nozzle is first used to spray the fluid to the edge of the bonding layer of the wafer to be debonded, and then the second nozzle is used to spray the fluid to the edge of the bonding layer of the wafer to be debonded, so as to form a slit at the edge of the bonding layer, and the slit is the starting point of debonding. Its beneficial effect is that: under the condition of a constant flow rate, the small diameter of the first nozzle causes a large flow rate of the fluid passing through, thereby increasing the force of the fluid acting on the wafer to be debonded, and can quickly form a slit at the edge of the bonding layer, i.e., the starting point of debonding; the large diameter of the second nozzle causes a small flow rate of the fluid passing through, thereby reducing the force of the fluid acting on the slit, and can slowly expand the slit to avoid damaging the wafer.

[0012] Optionally, in step S1, the nozzle is moved to a predetermined spraying position by the moving portion, and the nozzle then sprays the fluid onto the edge of the bonding layer of the wafer to be debonded. After the debonding starting point is formed, the moving portion moves the nozzle away from the predetermined spraying position. This advantageously allows the nozzle to be more flexible in its position by being driven by the moving portion, thereby not affecting subsequent operations.

[0013] Optionally, the moving part includes a rotating shaft and a swing arm mounted on the rotating shaft, the angle between the rotating shaft and the swing arm is α, 0°<α<180°, and the nozzle is mounted on the swing arm. In step S1, the rotating shaft rotates to drive the swing arm and the nozzle to rotate around the central axis of the rotating shaft to a set spraying position. The nozzle then sprays the fluid onto the edge of the bonding layer of the wafer to be debonded. After the debonding starting point is formed, the rotating shaft rotates to drive the swing arm and the nozzle to move away from the set spraying position. The beneficial effect is that the structure of the moving part is simple and easy to operate.

[0014] Optionally, the chuck assembly includes a first chuck, a second chuck, a bracket, and an elastic member connected between the second chuck and the bracket. In step S2, the first chuck absorbs the first wafer, and the second chuck absorbs the second wafer. The first chuck and the bracket are moved away from each other to gradually separate the first wafer and the second wafer from the debonding starting point. During the separation process, the bracket applies a tensile force to the second wafer via the elastic member and the second chuck. This has the beneficial effect of uniformly applying the tensile force to the second wafer on the second chuck through the elastic member, thereby preventing fragmentation caused by uneven force on the second wafer.

[0015] Optionally, in step S1, while the fluid is sprayed onto the edge of the bonding layer of the wafer to be debonded using the nozzle, the chuck assembly drives the wafer to be debonded to rotate back and forth within a set range. This has the beneficial effect of quickly forming a slit at the edge of the bonding layer by rotating the wafer to be debonded back and forth within the set range.

[0016] In the second aspect, the present invention also provides a wafer debonding device, including a chuck assembly and a nozzle, wherein the nozzle is used to spray fluid onto the edge of the bonding layer of the wafer to be debonded to form a slit at the edge of the bonding layer, and the slit is the starting point of debonding. The chuck assembly is used to adsorb the wafer to be debonded and drive the first wafer and the second wafer to gradually separate from the debonding starting point.

[0017] Optionally, the nozzle includes a first nozzle and a second nozzle, and the diameter of the first nozzle is smaller than the diameter of the second nozzle.

[0018] Optionally, the wafer debonding device further includes a moving part, which includes a rotating shaft and a swing arm mounted on the rotating shaft, the angle between the rotating shaft and the swing arm is α, 0°<α<180°, and the nozzle is mounted on the swing arm.

[0019] Optionally, the chuck assembly includes a first chuck, a second chuck, a bracket, and an elastic member connected between the second chuck and the bracket, the first chuck is used to adsorb the first wafer, and the second chuck is used to adsorb the second wafer.

[0020] Optionally, there are multiple elastic members, and the multiple elastic members are evenly distributed along the circumference of the second chuck.

[0021] Optionally, the chuck assembly includes a first chuck and a first drive shaft connected to the first chuck, and the first drive shaft drives the first chuck to rotate.

[0022] Beneficial effects of the present invention:

[0023] 1. The surfaces of the first wafer and the second wafer after debonding are not damaged.

[0024] 2. The debonding efficiency of the present invention is higher than that of the traditional metal blade debonding.

[0025] 3. The wafer debonding device provided by the present invention is more flexible to set up, and can adapt to different wafer debonding by setting different heights, spray pressures, spray times, and rotation angles.

[0026] 4. Fluids can be freely selected to meet the debonding requirements of different bonding processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of wafer debonding in the prior art, FIG a is a schematic diagram of the structure of wafer debonding, and FIG b is a schematic diagram of the process of wafer debonding;

[0028] Figure 2 Schematic diagram of the process of the wafer debonding method of the present invention;

[0029] Figure 3 It is a structural schematic diagram of the wafer debonding device of the present invention. DETAILED DESCRIPTION

[0030] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention are clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0031] The present invention aims to: 1. address the problem of wafer surface damage caused by the insertion position of conventional metal blades; 2. address the problem of frequent metal blade replacement, which affects machine uptime and reduces economic efficiency; and 3. address the problem of prolonged wafer debonding time. The present invention uses a high-pressure liquid jet to replace the metal blade debonding method.

[0032] In order to achieve the above object, the present invention provides a wafer debonding method, referring to Figure 2 , including the following steps:

[0033] S0: providing a wafer to be debonded, wherein the wafer to be debonded comprises a first wafer and a second wafer bonded together, a bonding layer of the wafer to be debonded is formed between the first wafer and the second wafer, and a chuck assembly adsorbs the wafer to be debonded;

[0034] S1: using a nozzle to spray a fluid onto the edge of the bonding layer of the wafer to be debonded, so as to form a slit at the edge of the bonding layer, wherein the slit is a debonding starting point;

[0035] S2: The chuck assembly drives the first wafer and the second wafer to gradually separate from the debonding starting point.

[0036] Using high-flow jets continuously during wafer debonding can damage the wafer surface. In some embodiments of the present invention, the nozzle includes a first nozzle and a second nozzle, the diameter of the first nozzle being smaller than the diameter of the second nozzle. In step S1, the first nozzle is first used to spray the fluid onto the edge of the bonding layer of the wafer to be debonded, and then the second nozzle is used to spray the fluid onto the edge of the bonding layer of the wafer to be debonded, so as to form a slit at the edge of the bonding layer, which serves as the debonding starting point. Specifically, when the flow rate is constant, the small diameter of the first nozzle results in a large flow rate of the fluid passing through, thereby increasing the force exerted by the fluid on the wafer to be debonded, and enabling the slit to be quickly formed at the edge of the bonding layer, i.e., the debonding starting point; the large diameter of the second nozzle results in a small flow rate of the fluid passing through, thereby reducing the force exerted by the fluid on the slit, and enabling the slit to be slowly expanded to avoid damaging the wafer. In another embodiment, when the fluid reaches the second nozzle, the flow rate is also reduced relative to that at the first nozzle, thereby reducing the force exerted by the fluid on the slit.

[0037] In some specific embodiments of the present invention, the nozzle further includes a first valve for controlling the first nozzle and a second valve for controlling the second nozzle. The diameter of the first nozzle is 0.01-0.05 mm, and the diameter of the second nozzle is 0.1-0.3 mm.

[0038] In some embodiments of the present invention, in step S1, the nozzle is moved to a predetermined spraying position by a moving portion, and the nozzle then sprays fluid onto the edge of the bonding layer of the wafer to be debonded. After the debonding starting point is formed, the moving portion moves the nozzle away from the predetermined spraying position. Specifically, the predetermined spraying position is a position flush with the edge of the bonding layer of the wafer to be debonded.

[0039] In some embodiments of the present invention, the moving part includes a rotating shaft and a swing arm installed on the rotating shaft, the angle between the rotating shaft and the swing arm is α, 0°<α<180°, the nozzle is installed on the swing arm, and in step S1, the rotating shaft rotates to drive the swing arm and the nozzle to rotate around the central axis of the rotating shaft to the set injection position, and the nozzle then injects the fluid to the edge of the bonding layer of the wafer to be debonded. After the debonding starting point is formed, the rotating shaft rotates to drive the swing arm and the nozzle to move away from the set injection position.

[0040] In some embodiments of the present invention, the chuck assembly includes a first chuck, a second chuck, a bracket, and an elastic member connected between the second chuck and the bracket. In step S2, the first chuck adsorbs the first wafer, and the second chuck adsorbs the second wafer. The first chuck and the bracket move away from each other to drive the first wafer and the second wafer to gradually separate from the debonding starting point. During the separation process, the bracket applies tension to the second wafer through the elastic member and the second chuck.

[0041] In some embodiments of the present invention, in step S2, the support remains stationary, and the first chuck drives the first wafer to move in a direction away from the second wafer.

[0042] In some embodiments of the present invention, there are multiple elastic members, and the multiple elastic members are evenly distributed along the circumference of the second chuck.

[0043] In some embodiments of the present invention, in step S1, while the fluid is sprayed onto the edge of the bonding layer of the wafer to be debonded using the nozzle, the chuck assembly drives the wafer to be debonded to rotate back and forth within a set range. Specifically, the set range is the rotation angle of the wafer to be debonded, which is not limited herein and can be 30° or 60°.

[0044] In some embodiments of the present invention, the chuck assembly includes a first chuck and a first drive shaft connected to the first chuck. In step S0, the first chuck adsorbs the wafer to be debonded. In step S1, the first drive shaft rotates to drive the first chuck and the wafer to be debonded to rotate back and forth within a set range.

[0045] In some embodiments of the present invention, a step is further included between step S0 and step S1: opening the main valve of the fluid device.

[0046] In some embodiments of the present invention, the fluid is deionized water or a solvent. Specifically, different products and processes require different solvents, which should be determined according to the process conditions. The solvents are all commercially available products and are not limited here.

[0047] The present invention also provides a wafer debonding device, including a chuck assembly and a nozzle, wherein the nozzle is used to spray fluid onto the edge of the bonding layer of the wafer to be debonded to form a slit at the edge of the bonding layer, and the slit is the debonding starting point. The chuck assembly is used to adsorb the wafer to be debonded and drive the first wafer and the second wafer to gradually separate from the debonding starting point.

[0048] Some embodiments of the present invention, referring to Figure 3 The nozzle includes a first nozzle 64 and a second nozzle 65, wherein the diameter of the first nozzle 64 is smaller than the diameter of the second nozzle 65. Figure 3 The first nozzle 64 and the second nozzle 65 are arranged at both ends of the swing arm 61. The diameter of the first nozzle 64 is 0.01-0.05 mm, and the diameter of the second nozzle 65 is 0.1-0.3 mm. The diameter of the first nozzle 64 and the diameter of the second nozzle 65 both refer to the diameter of the hole for ejecting fluid.

[0049] Some embodiments of the present invention, referring to Figure 3 The wafer debonding device 100 further includes a moving part, which includes a rotating shaft 63 and a swing arm 61 mounted on the rotating shaft 63. The angle between the rotating shaft and the swing arm is α, 0°<α<180°, and the nozzle is mounted on the swing arm 61. Specifically, refer to Figure 3 The moving part also includes a third motor 62, and the third motor 62 is electrically connected to the rotating shaft 63. The rotating shaft 63 rotates under the drive of the third motor 62 to drive the swing arm 61 and the nozzle to rotate, and stops rotating after the nozzle rotates to the set spraying position.

[0050] Some embodiments of the present invention, referring to Figure 3 The chuck assembly includes a first chuck 41, a second chuck 51, a bracket 54 and an elastic member 55 connected between the second chuck 51 and the bracket 54. The first chuck 41 is used to adsorb the first wafer 71, and the second chuck 51 is used to adsorb the second wafer 72.

[0051] Some embodiments of the present invention, referring to Figure 3 There are multiple elastic members 55, and the multiple elastic members 55 are evenly distributed along the circumference of the second chuck 51. Figure 3There are three elastic members 55 , and the three elastic members 55 are evenly distributed along the circumference of the second chuck 51 .

[0052] Some embodiments of the present invention, referring to Figure 3 The chuck assembly includes a first chuck 41 and a first drive shaft 43 connected to the first chuck 41, and the first drive shaft 43 drives the first chuck 41 to rotate. Figure 3 , the first driving shaft 43 drives the first chuck 41 to move up and down, or the first driving shaft 43 drives the first chuck 41 to move up and down while rotating. Figure 3 The first motor 42 drives the first drive shaft 43 to rotate, thereby driving the first wafer 71 to rotate, and the second motor 52 drives the second drive shaft 53 connected to the bracket 54 to rotate, thereby driving the bracket 54, the elastic member 55, the second chuck 51 and the second wafer 72 to rotate.

[0053] Some embodiments of the present invention, referring to Figure 3 The wafer debonding device 100 further includes a fluid device 66 for storing fluid.

[0054] Some embodiments of the present invention, referring to Figure 3 A main valve is provided between the swing arm 61 and the fluid device 66.

[0055] Some embodiments of the present invention, referring to Figure 3 A first valve is provided between the first nozzle 64 and the swing arm 61 , and a second valve is provided between the second nozzle 65 and the swing arm 61 .

[0056] In some specific embodiments of the present invention, the first chuck is a lower chuck, and the second chuck is an upper chuck; the fluid device is a liquid pressurization and constant pressure device, and the main valve is an adjustable opening valve, which can freely control the flow and pressure entering the swing arm; deionized water or solvent is loaded into the cavity of the liquid pressurization and constant pressure device to ensure that the deionized water or solvent has a stable pressure during the injection process; the elastic part is a spring; the first wafer is a lower wafer, and the second wafer is an upper wafer.

[0057] The more specific operating steps of the present invention include the following:

[0058] S00: The fluid supplied by the factory (which can be deionized water or solvent) enters the inner cavity of the fluid device to ensure the stability of the fluid injection pressure in the inner cavity;

[0059] S01: The fluid device 66 is provided with a variable-flow valve (MFC) to freely control the flow rate and pressure of the liquid entering the swing arm 61. The swing arm 61 is provided with a first nozzle 64 and a second nozzle 65. The diameter of the first nozzle 64 is 0.01 mm, and the diameter of the second nozzle 65 is 0.1 mm. The first nozzle 64 is provided with a first valve to control the flow rate and pressure of the fluid entering the first nozzle 64. The second nozzle 65 is provided with a second valve to control the flow rate and pressure of the fluid entering the second nozzle 65.

[0060] S03: The wafer to be debonded is first transferred to the first chuck 41. The wafer to be debonded includes a first wafer 71 and a second wafer 72 that are bonded together. A bonding layer of the wafer to be debonded is formed between the first wafer 71 and the second wafer 72. The first chuck 41 vacuum-sucks the first wafer 71 among the wafers to be debonded.

[0061] S11: The rotating shaft 63 drives the swing arm 61 to rotate under the action of the third motor 62, thereby driving the first nozzle 64 to rotate from the starting position to the set injection position. The first driving shaft 43 drives the first chuck 41 and the first wafer 71 to move upward from the debonding position to the set injection position under the action of the first motor 42. At this time, the bonding layer of the wafer to be debonded is flush with the first nozzle 64.

[0062] S12: The swing arm 61 stops rotating, and the spray direction of the first nozzle 64 is toward the edge of the bonding layer of the wafer to be debonded. At this time, the first drive shaft 43, under the action of the first motor 42, drives the first chuck 41 to rotate back and forth alternately clockwise and counterclockwise (the reciprocating rotation is within a certain angle, and the technicians limit the angle according to the actual situation, which is no longer limited here). The MFC is opened, and the first valve is opened at the same time. The first nozzle 64 begins to spray fluid toward the edge of the bonding layer of the wafer to be debonded to form a slit at the edge of the bonding layer. The slit is the starting point for debonding. In one embodiment, the arc length corresponding to the reciprocating rotation of the first chuck 41 is the size of the slit. When the flow rate is constant, the diameter of the first nozzle is small, so that the flow rate of the fluid passing through is large, thereby increasing the force of the fluid acting on the wafer to be debonded, and being able to quickly form a slit at the edge of the bonding layer, which is the starting point for debonding.

[0063] S13: Close the MFC and the first valve. The rotating shaft 63 drives the swing arm 61 to rotate under the action of the third motor 62, so as to drive the second nozzle 65 to rotate to the set injection position. At this time, the slit is flush with the second nozzle 65, and the swing arm 61 stops rotating. At this time, the first drive shaft 43 drives the first chuck 41 to rotate back and forth in the same manner as in step S12 under the action of the first motor 42. After the flow rate of the MFC is reduced, the MFC and the second valve are opened. The second nozzle 65 begins to spray fluid at a small flow rate toward the slit. After the fluid enters the slit, it flows around the slit to expand the opening of the slit. The large diameter of the second nozzle reduces the flow rate of the fluid passing through, thereby reducing the force of the fluid acting on the slit, which can slowly expand the slit to avoid damaging the wafer.

[0064] S21: The second valve and the MFC valve are closed, and the swing arm 61 rotates to drive the first nozzle 64 to rotate to the starting position, thereby preventing the swing arm 61, the first nozzle 64, and the second nozzle 65 from affecting the operation of subsequent processes. Then, the first drive shaft 43 drives the first chuck 41 to start high-speed rotation under the action of the first motor 42 to dry the surface fluid of the wafer to be debonded;

[0065] S22: The first drive shaft 43 drives the first chuck 41 to move downward from the set injection position to the debonding position under the action of the first motor 42, and the second drive shaft 53 drives the second chuck 52 to descend under the action of the second motor 52, and clamps the second wafer 72 of the wafer to be debonded. At this time, the first drive shaft 43 drives the first chuck 41 to start descending under the action of the first motor 42, and the second chuck 52 remains stationary, so that the first wafer 71 and the second wafer 72 are gradually separated from the debonding starting point until the first wafer 71 and the second wafer 72 are completely separated; in the process of separating the first wafer 71 and the second wafer 72, the spring between the second chuck 52 and the bracket 54 is used to make the second wafer 72 more evenly stressed, thereby avoiding the second wafer 72 from being broken due to uneven stress.

[0066] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A wafer debonding method, characterized in that: The following steps are involved: S0: providing a wafer to be debonded, wherein the wafer to be debonded comprises a first wafer and a second wafer bonded together, a bonding layer of the wafer to be debonded is formed between the first wafer and the second wafer, and a chuck assembly adsorbs the wafer to be debonded; S1: using a nozzle to spray a fluid onto the edge of the bonding layer of the wafer to be debonded, so as to form a slit at the edge of the bonding layer, wherein the slit is a debonding starting point; S2: The chuck assembly drives the first wafer and the second wafer to gradually separate from the debonding starting point.

2. The wafer debonding method according to claim 1, wherein: The nozzle includes a first nozzle and a second nozzle, the diameter of the first nozzle is smaller than the diameter of the second nozzle, and in step S1, the first nozzle is first used to spray the fluid to the edge of the bonding layer of the wafer to be debonded, and then the second nozzle is used to spray the fluid to the edge of the bonding layer of the wafer to be debonded, so as to form a slit at the edge of the bonding layer, and the slit is the starting point of debonding.

3. The wafer debonding method according to claim 1, wherein: In step S1, the moving part drives the nozzle to move to the set spraying position, and the nozzle then sprays the fluid to the edge of the bonding layer of the wafer to be debonded. After the debonding starting point is formed, the moving part drives the nozzle to move away from the set spraying position.

4. The wafer debonding method according to claim 3, wherein: The moving part includes a rotating shaft and a swing arm installed on the rotating shaft, the angle between the rotating shaft and the swing arm is α, 0°<α<180°, and the nozzle is installed on the swing arm. In the step S1, the rotating shaft rotates to drive the swing arm and the nozzle to rotate around the central axis of the rotating shaft to the set injection position, and the nozzle then injects the fluid to the edge of the bonding layer of the wafer to be debonded. After the debonding starting point is formed, the rotating shaft rotates to drive the swing arm and the nozzle to move away from the set injection position.

5. The wafer debonding method according to claim 1, wherein: The chuck assembly includes a first chuck, a second chuck, a bracket and an elastic member connected between the second chuck and the bracket. In step S2, the first chuck adsorbs the first wafer, and the second chuck adsorbs the second wafer. The first chuck and the bracket move away from each other to drive the first wafer and the second wafer to gradually separate from the debonding starting point. During the separation process, the bracket applies tension to the second wafer through the elastic member and the second chuck.

6. The wafer debonding method according to claim 1, wherein: In the step S1 , the fluid is sprayed onto the edge of the bonding layer of the wafer to be debonded by using a nozzle, while the chuck assembly drives the wafer to be debonded to rotate back and forth within a set range.

7. A wafer debonding device, characterized in that: It includes a chuck assembly and a nozzle, the nozzle is used to spray fluid to the edge of the bonding layer of the wafer to be debonded to form a slit at the edge of the bonding layer, and the slit is the starting point for debonding. The chuck assembly is used to adsorb the wafer to be debonded and drive the first wafer and the second wafer to gradually separate from the debonding starting point.

8. The wafer debonding device according to claim 7, wherein: The nozzle includes a first nozzle and a second nozzle, and a diameter of the first nozzle is smaller than a diameter of the second nozzle.

9. The wafer debonding device according to claim 7, wherein: It also includes a moving part, which includes a rotating shaft and a swing arm installed on the rotating shaft. The angle between the rotating shaft and the swing arm is α, 0°<α<180°, and the nozzle is installed on the swing arm.

10. The wafer debonding device according to claim 7, wherein: The chuck assembly includes a first chuck, a second chuck, a bracket, and an elastic member connected between the second chuck and the bracket. The first chuck is used to absorb the first wafer, and the second chuck is used to absorb the second wafer.

11. The wafer debonding device according to claim 10, wherein: There are multiple elastic members, and the multiple elastic members are evenly distributed along the circumference of the second chuck.

12. The wafer debonding device according to claim 7, wherein: The chuck assembly includes a first chuck and a first driving shaft connected to the first chuck, and the first driving shaft drives the first chuck to rotate.

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