Metal high-flatness vertical transition structure

Abstract

The invention discloses a metal high-flatness vertical transition structure, and relates to the technical field of lightweight antennas, the metal high-flatness vertical transition structure comprises a PCB structure, a top layer metal structure, a silicon-based process structure and a bottom layer metal structure which are fixedly arranged in sequence from top to bottom, and the lower surface of the PCB structure is fixedly connected with the upper surface of the top layer metal structure; the lower surface of the top layer metal structure is fixedly connected with the upper surface of the silicon-based process structure, and the lower surface of the silicon-based process structure is fixedly connected with the upper surface of the bottom layer metal structure. The high-flatness metal structure is inserted between the silicon-based process structure and the PCB structure, so that effective connection among the silicon-based process structure with micron-level flatness, the metal structure with submillimeter-level flatness and the PCB process structure with millimeter-level flatness is realized, and the problems of high cost, complex assembly process, low cost and the like of a gold wire bonding and micro-assembly process are solved. The utilization rate is low; the damage is easy, and the like.

Description

Technical Field

[0001] The present application relates to the technical field of lightweight antennas, and in particular to a metal high-flatness vertical transition structure. Background Art

[0002] The rapid development of satellite communications and 5G technologies is driving technological innovation in compact, miniaturized, and high-performance terminal antennas. To meet these demands, lightweight antennas with low profiles, integrated broadband transceivers, and high integration density have become a key technical challenge and future development direction for the industry.

[0003] Existing technologies utilize the rational layout of highly flat, high-tech substrates, such as silicon substrates, alongside traditional PCB substrates, and employ microassembly techniques like gold wire bonding to achieve low-cost, high-precision integration of active and passive components, effectively improving system performance. This process has been widely adopted in highly integrated, lightweight antennas or RF systems, demonstrating significant cost and technical advantages.

[0004] When combining high-flatness, high-process substrates like silicon-based substrates with traditional PCB substrates, technologies such as gold wire bonding, microassembly, highly integrated silicon-based process structures, miniaturized ridge waveguide or double-ridge waveguide network technology, and extended conductor press-fit structures are used. However, the application of these technologies results in the following defects in the structure combining active and passive components:

[0005] 1. Gold wire bonding and micro-assembly technology result in high cost, complex assembly process, low availability and easy damage.

[0006] 2. High-integration silicon-based process structures have disadvantages such as high cost, easy damage, and heat concentration.

[0007] 3. In actual production, if the miniaturized ridge waveguide or double-ridge waveguide network technology is cut, produced, and assembled at the point where the current is maximum, miniaturization can be easily achieved. However, it places extremely high demands on the processing technology. Practical problems such as poor surface flatness of the metal cavity or insufficient force consistency of the screws can easily lead to leakage waves. If the technology is cut, produced, and assembled at the point where the current is minimum, the production and assembly process requirements are not high, but the structural size requirements are large, making miniaturization difficult to achieve.

[0008] 4. Extended conductor press-fit structures fill gaps with extended conductors and then use external force to connect the upper and lower structures. However, in actual assembly, large extended structures are not conducive to achieving electromagnetic shielding or interconnection. Small extended structures are prone to aggregation and stacking during assembly, resulting in poor density uniformity. In particular, short circuits or open circuits caused by loose extended structures can have a fatal impact on the system. Summary of the Invention

[0009] To this end, the present application provides a metal high-flatness vertical transition structure to solve the problems of the prior art in lightweight antenna assembly process being complex, high cost, low availability, and easy damage.

[0010] In order to achieve the above objectives, this application provides the following technical solutions:

[0011] A metal high-flatness vertical transition structure, comprising a PCB structure, a top metal structure, a silicon-based process structure, and a bottom metal structure fixedly arranged in sequence from top to bottom;

[0012] The PCB structure includes a PCB antenna, a PCB, a PCB microstrip line, and a PCB ground pad, wherein the PCB antenna is fixedly arranged on the upper surface of the PCB, the PCB microstrip line and the PCB ground pad are fixedly arranged on the lower surface of the PCB, and the PCB microstrip line and the PCB ground pad are fixedly connected to the upper surface of the top metal structure;

[0013] The top metal structure includes a top metal floor, a left support column, a first bottom metal floor, a right support column and a ridge waveguide to coaxial structure, the top metal floor, the left support column, the first bottom metal floor and the right support column form a quadrilateral, the ridge waveguide to coaxial structure is fixedly arranged inside the quadrilateral, a first opening is provided between the top metal floor and the left support column, a second opening is provided in the first bottom metal floor, the ridge waveguide to coaxial structure is fixedly connected to the PCB microstrip line through the first opening, the top of the left support column and the top metal floor are fixedly connected to the PCB ground pad, and the ridge waveguide to coaxial structure is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening;

[0014] The upper surface of the silicon-based process structure is directly fixedly connected to the lower surface of the first bottom metal floor; the lower surface of the silicon-based process structure is fixedly connected to the bottom metal structure;

[0015] The bottom metal structure includes a bottom metal waveguide cavity, a second bottom metal floor and a ridge waveguide-to-ridge structure. The bottom of the bottom metal waveguide cavity and the ridge waveguide-to-ridge structure are respectively fixedly arranged on the upper surface of the second bottom metal floor. The top of the bottom metal waveguide cavity is fixedly connected to the bottom surface of the silicon-based process structure. The top of the ridge waveguide-to-ridge structure is fixedly connected to the second microstrip line on the bottom surface of the silicon-based process structure.

[0016] Preferably, a plurality of non-solder resist patterns are provided on the lower surface of the PCB at positions where the PCB microstrip line and the PCB ground pad are welded. The PCB microstrip line is welded to the ridge waveguide to coaxial structure through solder balls and the non-solder resist patterns. The PCB ground pad is welded to the top of the left support column and the top metal floor through solder balls and the non-solder resist patterns.

[0017] Preferably, the non-solder mask pattern includes a steel mesh window and a PCB window, the steel mesh window is a circular window, and the PCB window is opened on the periphery of the circumference of the steel mesh window.

[0018] Preferably, it further includes a left fixing column and a right fixing column, the bottoms of the left fixing column and the right fixing column are fixedly arranged on the upper surface of the first bottom metal floor, the left fixing column is located on the left side of the left support column, and the right fixing column is located on the right side of the right support column, and the tops of the left fixing column and the right fixing column are fixedly connected to the two ends of the PCB by screws.

[0019] Preferably, the ridge waveguide to coaxial structure includes a first ridge waveguide, a ridge waveguide transition structure and a second ridge waveguide, the first ridge waveguide and the second ridge waveguide are connected through the ridge waveguide transition structure, a coaxial inner conductor is fixedly arranged inside the first ridge waveguide, the top of the coaxial inner conductor extends out of the first ridge waveguide, the bottom of the first ridge waveguide is fixedly connected to the first bottom metal floor, and the top of the coaxial inner conductor is fixedly connected to the PCB microstrip line through the first opening; a coaxial outer conductor is fixedly arranged inside the second ridge waveguide, the bottom of the coaxial outer conductor extends out of the second ridge waveguide, the top of the second ridge waveguide is fixedly connected to the top metal floor, and the bottom of the coaxial outer conductor is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening.

[0020] Preferably, the silicon-based process structure includes an upper glass substrate and a lower glass substrate, a liquid crystal layer is filled between the upper glass substrate and the lower glass substrate, a phase shifter is arranged in the liquid crystal layer, a phase shifter transmission line is fixedly arranged on the lower surface of the upper glass substrate, the phase shifter transmission line is connected to the phase shifter, the upper glass substrate is provided with a first metallized through-hole at a position located on the phase shifter transmission line, the first metallized through-hole is fixedly connected to the bottom of the coaxial outer conductor through the first microstrip line; the lower glass substrate is provided with a second metallized through-hole, the second metallized through-hole is fixedly connected to the ridge waveguide-to-ridge structure through the second microstrip line.

[0021] Preferably, the upper glass substrate is provided with a plurality of third metallized through holes, and the first bottom metal floor is provided with a plurality of grooves near the upper glass substrate, the plurality of grooves corresponding to the positions of the third metallized through holes, and an extended metal structure is placed in the grooves.

[0022] Preferably, a metal layer is fixedly disposed between the liquid crystal layer and the lower glass substrate.

[0023] Preferably, the ridge waveguide-to-ridge structure includes a third ridge waveguide, a ridge transition structure and a ridge, the third ridge waveguide is fixedly connected to the ridge through the ridge transition structure, a coaxial conductor is fixedly arranged inside the third ridge waveguide, the top of the coaxial conductor extends out of the third ridge waveguide, the bottom of the third ridge waveguide is fixedly connected to the upper surface of the second bottom metal floor, the top of the coaxial conductor is fixedly connected to the second microstrip line on the lower surface of the silicon-based process structure, and the bottom of the ridge is fixedly connected to the upper surface of the second bottom metal floor.

[0024] Preferably, a ridge waveguide feeding network is provided inside the second bottom metal floor, and the waveguide cavity of the ridge waveguide feeding network is sealed by a continuous convex structure.

[0025] Compared with the prior art, this application has at least the following beneficial effects:

[0026] 1. This application provides a metal high-flatness vertical transition structure, comprising a PCB structure, a top metal structure, a silicon-based process structure, and a bottom metal structure, fixedly arranged in sequence from top to bottom. By inserting a high-flatness metal structure between the silicon-based process structure and the PCB structure, this application achieves an effective connection between the silicon-based process structure with micron-level flatness, the metal structure with submillimeter-level flatness, and the PCB process structure with millimeter-level flatness. This solves the problems of high cost, complex assembly process, low availability, and easy damage associated with gold wire bonding and micro-assembly processes.

[0027] 2. By opening a non-solder mask pattern on the PCB that meets the design requirements, the shape and size of the steel mesh window can be reasonably controlled. After heating in the furnace, the three-dimensional shape and flow of the extended metal can be effectively controlled, avoiding the phenomenon of free metal extended structure. At the same time, the amount of extended structure added can be effectively controlled, achieving effective connection, shielding and other technical requirements.

[0028] 3. Directly connecting the high-heat area in the silicon-based process structure with the metal structure with signal transmission, shielding and other functions can achieve the purposes of heat conduction and heat dissipation on the one hand, and on the other hand, it can realize the functional reuse of the metal structure and achieve the purpose of high integration.

[0029] 4. Establishing a continuous "convex" structure can achieve tight consolidation of the waveguide assembly gap without affecting the signal transmission inside the waveguide, avoiding the leakage phenomenon that is very easy to occur during the waveguide wide side cutting and reassembly process, and effectively improving the assembly yield of waveguide devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] To more intuitively illustrate the prior art and the present application, exemplary drawings are provided below. It should be understood that the specific shapes and structures shown in the drawings should not generally be considered as limiting conditions for implementing the present application; for example, based on the technical concepts disclosed in this application and the exemplary drawings, those skilled in the art are capable of easily making routine adjustments or further optimizations to the addition / reduction / attribution division, specific shapes, positional relationships, connection methods, dimensional ratios, etc. of certain units (components).

[0031] Figure 1 A schematic diagram of a metal high-flatness vertical transition structure provided in this application;

[0032] Figure 2 Schematic diagram of the non-solder mask pattern structure connected to the PCB microstrip line provided by this application;

[0033] Figure 3 Schematic diagram of the non-solder mask pattern structure connected to the PCB ground pad provided in this application;

[0034] Figure 4 Schematic diagram of the peripheral connection structure between the PCB structure and the top metal structure provided in this application;

[0035] Figure 5 A schematic diagram of a third metallized through-hole structure provided in this application;

[0036] Figure 6 Schematic diagram of the second bottom metal floor structure with ridge waveguide feeding network provided by this application;

[0037] Figure 7 Schematic diagram of the existing waveguide assembly structure;

[0038] Figure 8 Schematic diagram of the "convex" waveguide assembly structure provided in this application.

[0039] Description of reference numerals:

[0040] 1. PCB structure; 101. PCB antenna; 102. PCB; 103. PCB microstrip line; 1031. Microstrip line end metal disk; 104. PCB ground pad; 105. Solder ball; 106. Non-solder mask pattern; 1061. Steel mesh window; 1062. PCB window; 2. Top metal structure; 201. Top metal floor; 202. Left support column; 203. First bottom metal floor; 2031. Groove; 204. Right support column; 205. Ridge waveguide to coaxial structure; 2051. First ridge waveguide; 20511. Coaxial inner conductor; 2052. Ridge waveguide transition structure; 2053. Second ridge waveguide; 20531. Coaxial outer conductor; 20 6. Left fixing column; 207. Right fixing column; 208. Screw; 3. Silicon-based process structure; 301. First microstrip line; 302. First metallized through-hole; 303. Upper glass substrate; 304. Liquid crystal layer; 305. Metal layer; 306. Lower glass substrate; 307. Phase shifter transmission line; 308. Second metallized through-hole; 309. Second microstrip line; 310. Third metallized through-hole; 4. Bottom metal structure; 401. Bottom metal waveguide cavity; 402. Second bottom metal floor; 4021. Ridge waveguide feeding network; 403. Ridge waveguide to ridge structure; 4031. Third ridge waveguide; 40311. Coaxial conductor; 4032. Ridge transition structure; 4033. Ridge. DETAILED DESCRIPTION

[0041] The present application will be further described below in detail through specific embodiments in conjunction with the accompanying drawings.

[0042] In the description of this application: unless otherwise specified, the meaning of "plurality" is two or more. The terms "first", "second", "third", etc. in this application are intended to distinguish the objects referred to and do not have any special meaning in terms of technical connotation (for example, they should not be understood as emphasizing the importance or order, etc.). Expressions such as "including", "comprising", "having", etc. also mean "not limited to" (certain units, components, materials, steps, etc.).

[0043] The terms such as "upper", "lower", "left", "right", "middle", etc. cited in this application are usually used to indicate the general relative position relationship for the convenience of intuitive understanding by referring to the drawings, and are not absolute limitations on the position relationship in the actual product.

[0044] See also Figure 1 The present application provides a metal high-flatness vertical transition structure, including a PCB structure 1, a top metal structure 2, a silicon-based process structure 3 and a bottom metal structure 4 fixedly arranged from top to bottom.

[0045] Among them, the PCB structure 1 includes a PCB antenna 101, a PCB 102, a PCB microstrip line 103 and a PCB ground pad 104. The PCB antenna 101 is fixedly set on the upper surface of the PCB 102, the PCB microstrip line 103 and the PCB ground pad 104 are fixedly set on the lower surface of the PCB 102, and the PCB microstrip line 103 and the PCB ground pad 104 are fixedly connected to the upper surface of the top metal structure 2.

[0046] The top metal structure 2 includes a top metal floor 201, a left support column 202, a first bottom metal floor 203, a right support column 204 and a ridge waveguide to coaxial structure 205. The top metal floor 201, the left support column 202, the first bottom metal floor 203 and the right support column 204 form a quadrilateral. The ridge waveguide to coaxial structure 205 is fixedly arranged inside the quadrilateral. A first opening is opened between the top metal floor 201 and the left support column 202, and a second opening is opened in the first bottom metal floor 203. The ridge waveguide to coaxial structure 205 is fixedly connected to the PCB microstrip line 103 through the first opening. The top of the left support column 202 and the top metal floor 201 are fixedly connected to the PCB ground pad 104. The ridge waveguide to coaxial structure 205 is fixedly connected to the first microstrip line 301 on the upper surface of the silicon-based process structure 3 through the second opening.

[0047] The upper surface of the silicon-based process structure 3 is directly fixedly connected to the lower surface of the first bottom metal floor 203 ; the lower surface of the silicon-based process structure 3 is fixedly connected to the bottom metal structure 4 .

[0048] The bottom metal structure 4 includes a bottom metal waveguide cavity 401, a second bottom metal floor 402 and a ridge waveguide-to-ridge structure 403. The bottom of the bottom metal waveguide cavity 401 and the ridge waveguide-to-ridge structure 403 are respectively fixedly arranged on the upper surface of the second bottom metal floor 402. The top of the bottom metal waveguide cavity 401 is fixedly connected to the bottom surface of the silicon-based process structure 3, and the top of the ridge waveguide-to-ridge structure 403 is fixedly connected to the second microstrip line 309 on the bottom surface of the silicon-based process structure 3.

[0049] The present application provides a metal high-flatness vertical transition structure to address the problems of high cost, complex assembly process, low availability and easy damage of gold wire bonding and micro-assembly processes. Through reasonable layout, a high-flatness metal structure (top metal structure 2) is inserted between the silicon-based process structure 3 and the PCB structure 1 to achieve effective connection between the silicon-based process structure 3 with micron-level flatness, the metal structure with submillimeter-level flatness and the PCB process structure with millimeter-level flatness.

[0050] For details, please refer to Figure 2In a metal high-flatness vertical transition structure provided by the present application, a plurality of non-solder resist patterns 106 are provided on the lower surface of the PCB 102 at the positions where the PCB microstrip line 103 and the PCB ground pad 104 are welded. The PCB microstrip line 103 is welded to the ridge waveguide to coaxial structure 205 through the solder balls 105 and the non-solder resist patterns 106. The PCB ground pad 104 is welded to the top of the left support column 202 and the top metal floor 201 through the solder balls 105 and the non-solder resist patterns 106.

[0051] For more details, see Figure 2 and Figure 3 In a metal high-flatness vertical transition structure provided in the present application, the non-solder mask pattern 106 includes a steel mesh window 1061 and a PCB window 1062. The steel mesh window 1061 is a circular window, and the PCB window 1062 is opened on the periphery of the circumference of the steel mesh window 1061.

[0052] The present application provides a metal high-flatness vertical transition structure that opens a non-solder mask pattern 106 on a PCB that meets design requirements. By reasonably controlling the shape and size of the steel mesh window 1061 and heating it in a furnace, the three-dimensional shape (for example, solder ball 105) and flow of the extended metal can be effectively controlled. The extended metal structure is welded and solidified to the PCB and then connected to the metal structure, which can effectively prevent the extended structure from being free. At the same time, the three-dimensional shape and flow of the metal extended structure at different positions can be effectively controlled, and the purpose of achieving stable system performance after assembly is achieved.

[0053] See also Figure 4 The present application provides a metal high-flatness vertical transition structure, which also includes a left fixing post 206 and a right fixing post 207. The bottoms of the left fixing post 206 and the right fixing post 207 are fixedly mounted on the upper surface of the first bottom metal floor 203. The left fixing post 206 is located to the left of the left support post 202, and the right fixing post 207 is located to the right of the right support post 204. The tops of the left fixing post 206 and the right fixing post 207 are fixedly connected to the two ends of the PCB 102 via screws 208. The present application locates the metal screws 208 on the periphery of the PCB 102 and the PCB antenna 101, which can better connect the PCB microstrip line 103 with the coaxial inner conductor 20511 and ensure that the coaxial outer conductor 20531 is connected to the PCB ground pad 104.

[0054] In a metal high-flatness vertical transition structure provided by the present application, a small gap of appropriate height is left between the PCB structure 1 and the top metal structure 2 at the screw 208. When the screw 208 is tightened, the PCB 102 will be subjected to downward pressure. In order to ensure the tightness of the structure and connection, the present application adjusts the flow of solder paste by controlling the size of the PCB window 1062 and the steel mesh window 1061 at the metal disc 1031 at the end of the microstrip line. Specifically, in the present application, the size of the steel mesh window 1061 at the metal disc 1031 at the end of the microstrip line is larger than the size of the PCB window 1062, which allows more solder paste to flow into this area. After heating in the reflow oven, the height and radius of the extended structure formed by metal tin will be larger. Similarly, the present application can also control the size of the PCB window 1062 and the steel mesh window 1061 at the PCB ground pad 104. In the application, the size of the steel mesh window 1061 at the PCB ground pad 104 is smaller than the size of the PCB window 1062. This reduces the amount of solder paste flowing into this area, resulting in a relatively small height and radius of the extended structure after heating. Through this design, the force gradually decreases from screw 208 to the PCB ground pad 104 and then to the metal disc 1031 at the end of the microstrip line, but the size of the metal extended structure gradually increases. This design ensures that the structure can be tightly connected in different stress-bearing areas, thereby ensuring the stability and reliability of the entire system.

[0055] Similarly, the size and shape of the PCB window 1062 and the steel mesh window 1061 can be controlled according to specific circumstances, thereby achieving effective control of the three-dimensional shape and flow of the extended metal.

[0056] Continue reading Figure 1 In a metal high-flatness vertical transition structure provided by the present application, a ridge waveguide to coaxial structure 205 includes a first ridge waveguide 2051, a ridge waveguide transition structure 2052, and a second ridge waveguide 2053. The first ridge waveguide 2051 and the second ridge waveguide 2053 are connected by the ridge waveguide transition structure 2052. A coaxial inner conductor 20511 is fixedly arranged inside the first ridge waveguide 2051. The top of the coaxial inner conductor 20511 extends out of the first ridge waveguide 2051. The bottom of the first ridge waveguide 2051 is connected to the first ridge waveguide 2051. The bottom metal floor 203 is fixedly connected, and the top of the coaxial inner conductor 20511 is fixedly connected to the PCB microstrip line 103 through the first opening; a coaxial outer conductor 20531 is fixedly arranged inside the second ridge waveguide 2053, and the bottom of the coaxial outer conductor 20531 extends out of the second ridge waveguide 2053, and the top of the second ridge waveguide 2053 is fixedly connected to the top metal floor 201, and the bottom of the coaxial outer conductor 20531 is fixedly connected to the first microstrip line 301 on the upper surface of the silicon-based process structure 3 through the second opening.

[0057] Continue reading Figure 1 In a metal high-flatness vertical transition structure provided in the present application, a silicon-based process structure 3 includes an upper glass substrate 303 and a lower glass substrate 306. A liquid crystal layer 304 is filled between the upper glass substrate 303 and the lower glass substrate 306. A phase shifter is arranged in the liquid crystal layer 304. A phase shifter transmission line 307 is fixedly arranged on the lower surface of the upper glass substrate 303. The phase shifter transmission line 307 is connected to the phase shifter. The upper glass substrate 303 has a first metallized through-hole 302 at a position located at the phase shifter transmission line 307. The first metallized through-hole 302 is fixedly connected to the bottom of the coaxial outer conductor 20531 through a first microstrip line 301; a second metallized through-hole 308 is opened on the lower glass substrate 306, and the second metallized through-hole 308 is fixedly connected to the ridge waveguide-to-ridge structure 403 through a second microstrip line 309.

[0058] See also Figure 5 In a metal high-flatness vertical transition structure provided in the present application, a plurality of third metallized through-holes 310 are formed on an upper glass substrate 303, and a plurality of grooves 2031 are formed on the first bottom metal floor 203 near the upper glass substrate 303. The plurality of grooves 2031 correspond to the positions of the third metallized through-holes 310, and an extended metal structure is placed in the groove 2031, which is a solder ball 105.

[0059] In a high-flatness metal vertical transition structure provided in this application, addressing the active heat concentration phenomenon in a highly integrated silicon-based process structure 3, a rational design directly connects the high-heat areas within the silicon-based process structure 3 to a metal structure with functions such as signal transmission and shielding. This not only achieves heat conduction and heat dissipation, but also allows for functional reuse of the metal structure, achieving high integration. In the heat-concentrated areas, more third metallized vias 310 are provided, with an extended structure placed on top. After furnace processing, the extended metal structure becomes hemispherical. Semi-elliptical grooves 2031 are provided in the first bottom metal floor 203 corresponding to these hemispheres, ensuring good contact between the two and achieving precise positioning and connection.

[0060] Continue reading Figure 1 In a metal high-flatness vertical transition structure provided in the present application, a metal layer 305 is fixedly arranged between the liquid crystal layer 304 and the lower glass substrate 306 .

[0061] Continue reading Figure 1In a metal high-flatness vertical transition structure provided in the present application, a ridge waveguide to ridge structure 403 includes a third ridge waveguide 4031, a ridge transition structure 4032 and a ridge 4033. The third ridge waveguide 4031 is fixedly connected to the ridge 4033 through the ridge transition structure 4032. A coaxial conductor 40311 is fixedly arranged inside the third ridge waveguide 4031. The top of the coaxial conductor 40311 extends out of the third ridge waveguide 4031. The bottom of the third ridge waveguide 4031 is fixedly connected to the upper surface of the second bottom metal floor 402. The top of the coaxial conductor 40311 is fixedly connected to the second microstrip line 309 on the lower surface of the silicon-based process structure 3. The bottom of the ridge 4033 is fixedly connected to the upper surface of the second bottom metal floor 402.

[0062] See also Figure 6 In a metal high-flatness vertical transition structure provided herein, a ridge waveguide feed network 4021 is disposed within the second bottom metal floor 402. By placing the ridge waveguide feed network 4021 within the second bottom metal floor 402, an overall system structure comprising a feed network, a silicon-based process transmission structure, a coaxial-microstrip transition structure, and antenna radiation can be achieved. The use of a miniaturized ridge waveguide design enables a more compact and less-lossy feed network, thereby improving system performance.

[0063] See also Figure 7 and Figure 8 In order to address the wave leakage phenomenon that is very likely to occur during the wide-side cutting and reassembly process of the waveguide, this application establishes a continuous "convex" structure through optimized simulation and design. Without affecting the signal transmission inside the waveguide, it can achieve tight consolidation of the waveguide assembly gap and effectively improve the assembly yield of the waveguide device.

[0064] Specifically, conventional ridge waveguides such as Figure 7 As shown, screws are added to the waveguide outer frame to connect the waveguide cover to the bottom waveguide structure, forming a sealed waveguide cavity. However, during actual assembly, the center of the screws must be physically distanced from the interior of the waveguide cavity. As a result, the force points of the upper and lower waveguide covers are not at the internal boundaries of the waveguide cavity. This can cause waveguide leakage and impedance discontinuity, hindering signal transmission.

[0065] See also Figure 8 The present application provides a continuous "convex" structure. Without affecting the signal transmission inside the waveguide, fixing screws are added "inside" the cavity, so that the force points of the upper and lower cover plates are at the internal boundary of the waveguide cavity, which can more easily achieve good contact between the two, reduce signal leakage, and ensure impedance continuity.

[0066] The metal high-flatness vertical transition structure provided in this application has the following advantages:

[0067] (1) A high-flatness metal structure is inserted between the silicon-based process structure and the traditional PCB process, achieving effective connection between the silicon-based process structure with micron-level flatness, the metal structure with submillimeter-level flatness, and the PCB process structure with millimeter-level flatness;

[0068] (2) Directly connecting the high-heat area in the silicon-based process structure with the metal structure with signal transmission, shielding and other functions can achieve the purpose of heat conduction and heat dissipation on the one hand, and realize the functional reuse of the metal structure on the other hand, and achieve the purpose of high integration;

[0069] (3) Establishing a continuous "convex" structure, which achieves tight consolidation of the waveguide assembly gap without affecting the signal transmission inside the waveguide, effectively improving the assembly yield of the waveguide device;

[0070] (4) After the extended metal is welded and solidified with the PCB, it is connected to the metal structure, which can effectively prevent the extended structure from being free, and at the same time effectively control the three-dimensional shape and flow of the metal extended structure at different positions.

[0071] In summary, the metal high-flatness vertical transition structure provided by this application has the following obvious advantages over the patent with publication number CN114521072B:

[0072] (1) It can effectively fix the extended structure and avoid the occurrence of free phenomenon;

[0073] (2) The shape and flow of the metal extension structure can be controlled as needed to achieve a three-dimensional layout, and the system performance is more stable after assembly.

[0074] The metal high-flatness vertical transition structure provided by this application has the following obvious advantages over the patent document with publication number CN114521072A:

[0075] (1) No solderable metallization plating is required;

[0076] (2) Direct assembly without high-temperature welding can effectively avoid problems such as deformation during high-temperature welding.

[0077] The metal high-flatness vertical transition structure provided by this application has the following obvious advantages over the patent with publication number CN108364878B:

[0078] (1) With automatic positioning function;

[0079] (2) No gold wire bonding process is required, the repeatability is high, it is not easy to be damaged, and the impedance control is easier.

[0080] The technical features of the above embodiments can be combined arbitrarily (as long as there is no contradiction in the combination of these technical features). In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described; these embodiments that are not explicitly written should also be considered to be within the scope of this specification.

Claims

1. A metal high-flatness vertical transition structure, characterized in that: It includes the PCB structure, top metal structure, silicon-based process structure and bottom metal structure fixedly arranged from top to bottom; The PCB structure includes a PCB antenna, a PCB, a PCB microstrip line, and a PCB ground pad, wherein the PCB antenna is fixedly arranged on the upper surface of the PCB, the PCB microstrip line and the PCB ground pad are fixedly arranged on the lower surface of the PCB, and the PCB microstrip line and the PCB ground pad are fixedly connected to the upper surface of the top metal structure; The top metal structure includes a top metal floor, a left support column, a first bottom metal floor, a right support column and a ridge waveguide to coaxial structure, the top metal floor, the left support column, the first bottom metal floor and the right support column form a quadrilateral, the ridge waveguide to coaxial structure is fixedly arranged inside the quadrilateral, a first opening is provided between the top metal floor and the left support column, a second opening is provided in the first bottom metal floor, the ridge waveguide to coaxial structure is fixedly connected to the PCB microstrip line through the first opening, the top of the left support column and the top metal floor are fixedly connected to the PCB ground pad, and the ridge waveguide to coaxial structure is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening; The upper surface of the silicon-based process structure is directly fixedly connected to the lower surface of the first bottom metal floor; the lower surface of the silicon-based process structure is fixedly connected to the bottom metal structure; The bottom metal structure includes a bottom metal waveguide cavity, a second bottom metal floor and a ridge waveguide-to-ridge structure. The bottom of the bottom metal waveguide cavity and the ridge waveguide-to-ridge structure are respectively fixedly arranged on the upper surface of the second bottom metal floor. The top of the bottom metal waveguide cavity is fixedly connected to the bottom surface of the silicon-based process structure. The top of the ridge waveguide-to-ridge structure is fixedly connected to the second microstrip line on the bottom surface of the silicon-based process structure.

2. The metal high-flatness vertical transition structure according to claim 1, characterized in that: The lower surface of the PCB is provided with a plurality of non-solder resist patterns at positions where the PCB microstrip line and the PCB ground pad are welded. The PCB microstrip line is welded to the ridge waveguide to coaxial structure through solder balls and the non-solder resist patterns. The PCB ground pad is welded to the top of the left support column and the top metal floor through solder balls and the non-solder resist patterns.

3. The metal high-flatness vertical transition structure according to claim 2, characterized in that: The non-solder mask pattern includes a steel mesh window and a PCB window. The steel mesh window is a circular window, and the PCB window is opened on the periphery of the circumference of the steel mesh window.

4. The metal high-flatness vertical transition structure according to claim 1, characterized in that: It also includes a left fixing column and a right fixing column, the bottoms of the left fixing column and the right fixing column are fixedly set on the upper surface of the first bottom metal floor, the left fixing column is located on the left side of the left support column, and the right fixing column is located on the right side of the right support column, and the tops of the left fixing column and the right fixing column are fixedly connected to the two ends of the PCB by screws.

5. The metal high-flatness vertical transition structure according to claim 1, characterized in that: The ridge waveguide to coaxial structure includes a first ridge waveguide, a ridge waveguide transition structure and a second ridge waveguide, the first ridge waveguide and the second ridge waveguide are connected through the ridge waveguide transition structure, a coaxial inner conductor is fixedly arranged inside the first ridge waveguide, the top of the coaxial inner conductor extends out of the first ridge waveguide, the bottom of the first ridge waveguide is fixedly connected to the first bottom metal floor, and the top of the coaxial inner conductor is fixedly connected to the PCB microstrip line through the first opening; a coaxial outer conductor is fixedly arranged inside the second ridge waveguide, the bottom of the coaxial outer conductor extends out of the second ridge waveguide, the top of the second ridge waveguide is fixedly connected to the top metal floor, and the bottom of the coaxial outer conductor is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening.

6. The metal high-flatness vertical transition structure according to claim 5, characterized in that: The silicon-based process structure includes an upper glass substrate and a lower glass substrate. A liquid crystal layer is filled between the upper glass substrate and the lower glass substrate. A phase shifter is arranged in the liquid crystal layer. A phase shifter transmission line is fixedly arranged on the lower surface of the upper glass substrate, and the phase shifter transmission line is connected to the phase shifter. The upper glass substrate is provided with a first metallized through-hole at a position located on the phase shifter transmission line. The first metallized through-hole is fixedly connected to the bottom of the coaxial outer conductor through the first microstrip line; the lower glass substrate is provided with a second metallized through-hole. The second metallized through-hole is fixedly connected to the ridge waveguide-to-ridge structure through the second microstrip line.

7. The metal high-flatness vertical transition structure according to claim 6, characterized in that: The upper glass substrate is provided with a plurality of third metallized through holes, and the first bottom metal floor is provided with a plurality of grooves near the upper glass substrate. The plurality of grooves correspond to the positions of the third metallized through holes, and extended metal structures are placed in the grooves.

8. The metal high-flatness vertical transition structure according to claim 6, characterized in that: A metal layer is fixedly arranged between the liquid crystal layer and the lower glass substrate.

9. The metal high-flatness vertical transition structure according to claim 6, characterized in that: The ridge waveguide-to-ridge structure includes a third ridge waveguide, a ridge transition structure and a ridge. The third ridge waveguide is fixedly connected to the ridge through the ridge transition structure. A coaxial conductor is fixedly arranged inside the third ridge waveguide. The top of the coaxial conductor extends out of the third ridge waveguide. The bottom of the third ridge waveguide is fixedly connected to the upper surface of the second bottom metal floor. The top of the coaxial conductor is fixedly connected to the second microstrip line on the lower surface of the silicon-based process structure. The bottom of the ridge is fixedly connected to the upper surface of the second bottom metal floor.

10. The metal high-flatness vertical transition structure according to claim 1, characterized in that: A ridge waveguide feeding network is provided inside the second bottom metal floor, and the waveguide cavity of the ridge waveguide feeding network is sealed by a continuous convex structure.

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