Combination of on-line and on-tool metrology for advanced packaging

By combining the online metrology system and tool metrology system, the scanning of global alignment marks and grain marks is achieved, and the problem of inaccurate alignment in digital lithography processing is solved and manufacturing accuracy is improved.

CN120569677APending Publication Date: 2025-08-29APPLIED MATERIALS INC
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Patent Information

Application Number
CN202380085218.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-12-15
Filing Date
2023-11-01
Publication Date
2025-08-29

AI Technical Summary

Technical Problem

In the prior art, there are shortcomings in overlapping accuracy and digital correction systems for digital lithography processing, resulting in inaccurate alignment of mask patterns on the substrate and difficulty in grain positioning.

Method used

Using a method of combining an online metrology system with a tool-on-to-to-to-to-to-to-to-to-to-to-to-to-to-to-to-to-to-to-measurement system, the correction factor is determined by scanning the global alignment marks and grain marks on the substrate, and the precise alignment and correction are achieved on the digital lithography tool using a digital correction mask.

Benefits of technology

The alignment accuracy of subsequent layers on the substrate and the positioning accuracy of grains are improved, the overlapping alignment capability of digital lithography processing is enhanced, and the manufacturing accuracy of semiconductor devices and display devices is improved.

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Abstract

Aspects of the present disclosure generally relate to digital lithographic printing systems and methods for aligning resolution with digital lithographic printing systems. A digital lithographic printing system includes a metrology system configured to improve overlap alignment of different layers of a lithographic printing process. The metrology system includes an on-line metrology system (IMS) in combination with an on-tool metrology system (OTM), which may enable substrate overlap alignment and die placement correction. An online metrology system may be positioned on an online metrology tool, and an on-tool metrology system is positioned on a digital lithographic printing tool. The online metrology system facilitates high throughput measurement of online metrology data for measuring marks, such as die marks and global alignment marks for verifying processing stability and die placement data for digital data correction. The online metrology data may be compared to a design file to determine an offset of the digital data correction.
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Description

Technical Field

[0001] Aspects of the present disclosure generally relate to digital lithography systems and methods for aligning resolution using digital lithography systems. Background Art

[0002] Maskless lithography is used in the manufacture of semiconductor devices, such as for back-end processing of semiconductor devices, and display devices such as liquid crystal displays (LCDs). It is desirable to align subsequent layers of mask patterns into a photoresist layer disposed above a substrate. It is also desirable to precisely position the die on the substrate. Therefore, there is a need in the art for an improved system and method for enhancing overlay accuracy and digital correction in digital lithography processes. Summary of the Invention

[0003] Aspects of the present disclosure generally relate to digital lithography systems and methods for aligning resolution using digital lithography systems.

[0004] In one aspect, a method for processing a substrate is provided. The method includes loading a substrate onto a platform of an inline metrology tool. The inline metrology tool includes at least one scanning device. The substrate includes one or more packages, each including one or more dies, each having a die mark formed on the one or more dies and one or more global alignment marks formed on the substrate. The method further includes scanning the substrate with the at least one scanning device to obtain a first set of coordinate data. The first set of coordinate data includes actual positions of the one or more global alignment marks and actual positions of the die marks. The method further includes establishing general position information of the substrate based on the actual positions of the global alignment marks. The method further includes determining actual positions of the die marks relative to the general position information. The method further includes comparing the actual positions of the die marks relative to the general position information with the designed positions of the die marks relative to the general position information to determine a correction factor. The method further includes loading the substrate onto a platform of a maskless lithography tool, the maskless lithography tool including at least one scanning device and at least one image projection system. The method further includes scanning the substrate with at least one scanning device of the maskless lithography tool to establish general position information of the substrate based on the actual position of the die marks. The method further includes patterning a subsequent layer onto the substrate using a digital correction mask and at least one image projection system, wherein the digital correction mask is based at least in part on the correction factor.

[0005] Embodiments may include one or more of the following. The one or more global alignment marks have a width in a range of approximately 50 microns to approximately 1000 microns. The die marks have a width of 50 microns or less. Establishing general position information for the substrate includes establishing a universal coordinate system for the substrate using actual positions of the one or more global alignment marks. Comparing actual positions of the die marks relative to the universal position information with designed positions of the die marks relative to the universal position information to determine correction factors includes comparing the actual positions of the die marks relative to the universal coordinate system to determine an offset and rotation of the one or more dies relative to the universal coordinate system. The first set of coordinate data further includes a Z height of the substrate. The first set of coordinate data further includes actual positions of one or more micro-marks formed on the substrate, wherein the one or more micro-marks are distinguishable from the one or more global alignment marks in size, shape, or both size and shape. At least a portion of the one or more micro-marks is positioned between adjacent packages of the one or more packages. Scanning the substrate with at least one scanning device to obtain the first set of coordinate data includes capturing images of the one or more global alignment marks and the die marks. Capturing images of the one or more global alignment marks and the die marks includes vertically moving a lens of at least one scanning device to adjust a focus of the lens on the substrate, and providing illumination to the substrate via one or more LEDs and an illuminator, wherein the images are captured at different focal points through the vertically moving lens.

[0006] In another aspect, a method for processing a substrate is provided. The method includes loading a substrate onto a platform of an inline metrology system. The substrate includes one or more packages, the one or more packages including one or more dies, the one or more dies having a die mark formed on the one or more dies, a global alignment mark formed on the substrate, and one or more calibration marks formed on the substrate. The method further includes capturing an image of the global alignment mark using at least one scanning device associated with the inline metrology system to establish a metrology coordinate system for the substrate. The method further includes capturing an image of the die mark using at least one scanning device. The method further includes determining a position of the die mark relative to the metrology coordinate system established by the global alignment mark. The method further includes comparing the positions of the global alignment mark and the die mark with a design file to obtain correction data. The method further includes transferring the substrate onto a platform of a digital lithography system. The method further includes determining the position of the global alignment mark using at least one scanning device associated with the digital lithography system to determine the positioning of the substrate. The method further includes patterning a subsequent layer onto the substrate using a digital correction mask and at least one image projection system, wherein the digital correction mask is based at least in part on the correction data.

[0007] Embodiments may include one or more of the following. The global alignment mark has a width in a range of about 50 microns to about 1000 microns. The die mark has a width of 50 microns or less. Patterning the subsequent layer includes forming connections between adjacent dies of the one or more dies. Capturing an image of the global alignment mark and capturing an image of the die mark includes: vertically moving a lens of at least one scanning device to adjust the focus of the lens on the substrate, and providing illumination to the substrate through one or more LEDs and illuminators, wherein the image is captured at different focal points through the vertically moving lens. The method further includes capturing an image of one or more micro-marks formed on the substrate using at least one scanning device, wherein the one or more micro-marks are distinguishable from the global alignment mark in size, shape, or both size and shape. At least a portion of the one or more micro-marks is positioned between adjacent packages of the one or more packages.

[0008] In yet another aspect, an online metrology system is provided. The online metrology system includes a plate, a movable platform, a support, and a plurality of metrology systems. The movable platform can be disposed above the plate, the movable platform being configured to support a substrate. The support is coupled to the plate, the support having an opening that allows the movable platform to pass therethrough. The plurality of metrology systems are coupled to the support. One or more metrology systems each include a microscope body, a lens, a focusing stage, a camera, a first LED, a second LED, a third LED, and an illuminator. The lens is coupled to the microscope body. The focusing stage is disposed between the microscope body and the lens, wherein the focusing stage is configured to move the lens to adjust the focus of the lens. The camera is coupled to the microscope body. The first LED, the second LED, and the third LED are coupled to the microscope body, wherein the LEDs transmit light to the microscope body. The illuminator is disposed below the lens.

[0009] Implementations may include one or more of the following: The lens is an objective lens. The system further includes a controller, wherein the controller is configured to instruct the focusing stage to move the lens to adjust the focus, wherein the camera captures images at multiple focal points.

[0010] In yet another aspect, a non-transitory computer-readable medium has instructions stored thereon that, when executed by a processor, cause a program to perform the operations of the apparatus and / or method described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order that the manner in which the above-described features of the present disclosure may be understood in detail, a more particular description of the aspects may be given by reference to the embodiments, which are briefly summarized above, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments.

[0012] Figure 1A perspective view of an online metrology system according to at least one embodiment of the present disclosure is shown.

[0013] Figure 2 A perspective view of a digital lithography system according to at least one embodiment of the present disclosure is shown.

[0014] Figure 3 A schematic diagram of a metering system according to at least one embodiment of the present disclosure is shown.

[0015] Figure 4A A schematic top view of a substrate according to at least one embodiment of the present disclosure is shown.

[0016] Figure 4B shows at least one embodiment of the present disclosure Figure 4A An enlarged top view of a portion of FIG.

[0017] Figure 5 A flow chart illustrating a method for package alignment and correction in accordance with at least one embodiment of the present disclosure is shown.

[0018] Figures 6A-6B Another flow chart illustrating a method for package alignment and correction in accordance with at least one embodiment of the present disclosure is shown.

[0019] Figure 7 A schematic diagram of a digital lithography environment is shown, in accordance with at least one embodiment of the present disclosure.

[0020] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one implementation may be beneficially incorporated in other implementations without further recitation. DETAILED DESCRIPTION

[0021] Aspects of the present disclosure generally relate to digital lithography systems and methods for utilizing digital lithography systems to achieve alignment resolution. The digital lithography system includes a metrology system configured to improve overlay alignment of different layers in a lithographic process. The metrology system includes an inline metrology system (IMS) in combination with an on-tool metrology system (OTM) to enable substrate overlay alignment and die placement correction. The inline metrology system can be positioned on an inline metrology tool, and the on-tool metrology system can be positioned on a digital lithography tool. The inline metrology system is configured to facilitate high-throughput measurement of inline metrology data from measurement marks, such as package marks, die marks, global alignment marks, and other marks used to verify process stability and for die placement data used for digital data correction. A relationship between the actual positions of the global alignment marks and the die marks is determined. This inline metrology data can be compared with a design file to determine an offset for digital data correction. For example, the actual position of the die mark relative to the global alignment mark is compared with the designed position of the die mark relative to the global alignment mark obtained from the design file. The difference between the actual position and the designed position of the die mark is used to determine an offset for the digital correction data. After the substrate is transferred from the inline metrology tool to the digital lithography tool, on-tool metrology aligns the inline metrology data with the digital lithography projection head or the "eye" of the digital lithography tool. For example, on-tool metrology determines the position of global alignment marks to provide alignment of the digital lithography projection head. The offset corrected by the digital data from the inline metrology system can be used to correct the digital mask used for patterning on the digital lithography tool. In addition, the global alignment and focus data from the on-tool metrology system can be fed back to the inline metrology system to improve future processing. This feedback of global alignment data from the digital lithography tool to the inline metrology system can improve metrology capture performance. For example, when acquiring metrology data from subsequent substrates, the feedback data can optimize the focus performance of the inline metrology system, which can reduce the time to capture metrology data from subsequent substrates. In addition, on-tool metrology is able to measure smaller global alignment marks, die marks, and package marks than the alignment system built into the digital lithography projection head. Additionally, OTM to digital lithography projection head calibration enables the superposition of inline metrology data to the digital lithography coordinate system, which further improves the accuracy of the patterning process performed on the digital lithography tool.

[0022] Figure 1A perspective view of an online metrology system 100 according to at least one embodiment of the present disclosure is shown. The online metrology system 100 can be used to provide metrology data for advanced packaging die placement to implement digitally corrected lithography. The online metrology system 100 can be used in conjunction with on-tool metrology (e.g., metrology located on a digital lithography tool) to implement substrate overlay alignment and die placement correction for digitally corrected lithography performed on the digital lithography tool. The online metrology system 100 includes a platform 114 and a metrology device 104. The platform 114 is supported by a pair of rails 116 disposed on a flat plate 102. A substrate 120 is supported by the platform 114. As shown by Figure 1 As shown in the coordinate system shown, the platform 114 moves in the X direction along a pair of rails 116. The platform 114 also moves in the Y direction to process and / or index substrates 120. The platform 114 is capable of independent operation and can scan the substrate 120 in one direction and step in another direction. An encoder 118 is coupled to the platform 114 to provide information about the position of the platform 114 to a controller 122.

[0023] The controller 122 is generally designed to facilitate control and automation of the described metrology and processing techniques. The controller 122 can be coupled to or in communication with the metrology device 104, the platform 114, and the encoder 118. The metrology device 104 can provide information about substrate alignment as described above, such as metrology data, to the controller 122.

[0024] The substrate 120 includes any suitable material used as part of a flat panel display, such as glass, or a semiconductor material used as part of a semiconductor wafer. The substrate 120 can be of any suitable shape, such as Figure 1 The rectangular panel shown or the circular wafer used in semiconductor manufacturing. The substrate 120 has a film layer to be patterned, for example, formed thereon by etching a pattern thereon, and a photoresist layer formed on the film layer to be patterned, the photoresist layer being sensitive to electromagnetic radiation, such as UV or deep UV "light". Positive photoresist includes portions of the photoresist that, when exposed to radiation, become soluble in a photoresist developer applied to the photoresist after the pattern is written to the photoresist using electromagnetic radiation. Negative photoresist includes portions of the photoresist that, when exposed to radiation, become insoluble in a photoresist developer applied to the photoresist after the pattern is written to the photoresist using electromagnetic radiation. The chemical composition of the photoresist determines whether the photoresist is a positive photoresist or a negative photoresist. After the photoresist is exposed to electromagnetic radiation, the photoresist is developed to leave a patterned photoresist on the underlying film layer. The patterned photoresist is then used to pattern-etch the underlying thin film through the openings in the photoresist to form a portion of the electronic circuitry of the display panel. Additional details regarding the substrate 120 are provided in Figure 4A-4B discuss.

[0025] The metering device 104 includes a support 108 and a metering unit 106. The support 108 includes a pair of upright plates 128 disposed on the plate 102, supporting two or more bridges 124. The upright plates 128 and the bridges 124 form an opening 112 for the pair of rails 116 and the one or more platforms 114 to pass under the metering unit 106. The metering unit 106 is supported by the support 108. The metering unit 106 includes a plurality of metering systems 126. The plurality of metering systems 126 are supported by the one or more bridges 124. Although Figure 1 Six metrology systems 126 are depicted, but the metrology unit 106 is not limited in the number or location of metrology systems 126 on the support 108. Thus, when the substrate 120 is positioned below the support 108, the metrology systems 126 have a field of view that includes the substrate 120.

[0026] Figure 2 A perspective view of a digital lithography system 200 according to at least one embodiment of the present disclosure is shown. The digital lithography system 200 includes a platform 114 and a processing device 204. The digital lithography system 200 includes on-tool metrology that can be used in conjunction with an online metrology system (e.g., online metrology system 100) to implement substrate overlay alignment and die placement correction for digital correction lithography performed on the digital lithography system 200. As previously described, the platform 114 is supported by the pair of rails 116 disposed on the plate 102. The substrate 120 is supported by the platform 114. As shown by Figure 2 As shown in the coordinate system shown, the platform 114 moves in the X direction along the pair of rails 116. The platform 114 also moves in the Y direction to process and / or index the substrate 120. The platform 114 is capable of independent operation and can scan the substrate 120 in one direction and step in another direction. An encoder 118 is coupled to the platform 114 to provide information about the position of the platform 114 to a controller 122.

[0027] The controller 122 is generally designed to facilitate control and automation of the described processing techniques. The controller 122 can be coupled to or in communication with the processing device 204, the platform 114, and the encoder 118. The processing device 204 and the encoder 118 can provide information to the controller 122 regarding substrate processing and substrate alignment. For example, the processing device 204 can provide information to the controller 122 to alert the controller 122 that substrate processing has been completed. A program (or computer instructions) readable by the controller 122, which may be referred to as an imaging program, determines which tasks can be performed on the substrate. The program includes design files and code for monitoring and controlling processing time and substrate position. The design corresponds to a pattern written into the photoresist using electromagnetic radiation. The controller 122 includes a central processing unit (CPU) configured to process computer-executable instructions, such as stored in memory or storage devices, and causes the controller to implement the described method. The memory in the controller 122 may include components configured to run programs and software to implement the described method.

[0028] To facilitate control and automation of the described processing techniques, the CPU can be one of any form of general-purpose computer processor used in industrial settings, such as a programmable logic controller (PLC), for controlling the various chambers and sub-processors. Memory is coupled to the CPU and is non-transient and can be one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage. Support circuits are coupled to the CPU for supporting the processor in a conventional manner. Layer formation, curing, and other processes are typically stored in memory, typically as software routines. The software routines may also be stored and / or executed by a second CPU that is remote from the hardware controlled by the CPU.

[0029] The memory may be in the form of a computer-readable storage medium containing instructions that, when executed by the CPU, facilitate the operation of the inline metrology system 100 and / or the digital lithography system 200. The instructions in the memory are in the form of a program product, such as a program that implements the methods of the present disclosure. The program code may conform to any of a variety of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program in the program product defines the functionality of the embodiments (including the methods described herein).

[0030] In certain embodiments, the program reflects machine learning capabilities. Various data features include processing parameters such as processing time, temperature, pressure, voltage, polarity, power, gas type, precursor flow rate, etc. The relationship between the features is identified and defined so that it can be analyzed through a machine learning algorithm to absorb the data and adjust the processing performed by the UV curing equipment 165a-165g. The machine learning algorithm can use supervised learning or unsupervised learning techniques. Examples of machine learning algorithms implemented by this program include, but are not limited to, linear regression, logistic regression, decision tree, state vector machine, neural network, Bayesian algorithm ( Bayes), k-nearest neighbor, K-means, random forest, dimensionality reduction algorithm, and gradient boosting algorithm, etc.

[0031] Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media (e.g., read-only memory devices within a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), on which information is permanently stored; and (ii) writable storage media (e.g., floppy disks within a disk drive or hard drive, or any type of solid-state random-access semiconductor memory), on which information is stored mutably. Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure. In some embodiments, controller 190 is an etherCAT controller.

[0032] The processing device 204 includes a support 208 and a processing unit 206. The support 208 includes a pair of upright plates 228 disposed on the flat plate 102, supporting two or more bridges 224. The upright plates 228 and the bridges 224 form an opening 212 for the pair of rails 116 and the one or more platforms 114 to pass under the processing unit 206. The processing unit 206 is supported by the support 208. The processing unit 206 includes a plurality of image projection systems (IPS) 210 (also referred to as "eyes") and one or more metrology systems 126. The IPS 210 is used to print a lithographic pattern on the substrate 120. The plurality of IPS 210 and the metrology system 126 are supported by the one or more bridges 224. Although Figure 2Four IPSs 210 and two metrology systems 126 are depicted, but the processing unit 206 is not limited to how the metrology systems 126 and IPSs 210 are positioned on the support 208. In one example, the number of IPSs 210 is equal to the number of metrology systems 126. In another example, the number of IPSs 210 is less than the number of metrology systems 126. In another example, the number of IPSs 210 is greater than the number of metrology systems 126. The metrology systems 126 can be positioned relative to the IPSs 210 as desired. For example, the metrology system 126 can be positioned between two IPSs 210. The metrology systems 126 and IPSs 210 are positioned on the support 208 above the substrate 120. Therefore, when the substrate 120 is positioned below the support 208, the metrology systems 126 and IPSs have a field of view that includes the substrate 120.

[0033] In at least one embodiment, the processing unit 206 includes up to 84 IPSs 210. Each IPS 210 includes a spatial light modulator. Spatial light modulators include, but are not limited to, microLEDs, OLEDs, digital micromirror devices (DMDs), liquid crystal displays (LCDs), and vertical-cavity surface-emitting lasers (VCSELs). The components of each IPS 210 can vary depending on the spatial light modulator used.

[0034] Figure 3 A schematic diagram of a metrology system 126 according to at least one embodiment of the present disclosure is shown. The metrology system 126 can be positioned on the support 108 and / or the support 208 to capture images and measurement data on the substrate 120. The metrology system 126 is electrically connected to a controller 122. The controller 122 is generally designed to facilitate control and automation of the described metrology and processing techniques. For example, the controller 122 provides instructions to the metrology system 126 to capture images. The controller 122 also receives and transmits data acquired by the metrology system 126. The metrology system 126 also adjusts focus according to the instructions of the controller 122. The controller 122 further enables the metrology system to communicate with the IPS 210 and share data therebetween. For example, position data can be shared between the IPS 210 and the metrology system 126 to improve alignment resolution. The metrology system 126 includes a microscope body 302, a piezoelectric motor 304, a focusing stage 306, an objective lens 308, a brightfield illumination system 310, a darkfield illumination system 312, and a camera 314. The microscope body 302 includes an input arm 326. The input arm 326 is coupled to the bright field illumination system 310. The microscope body 302 is positioned toward the substrate 120 located on the platform 114 (see FIG. Figure 1 and Figure 2 ).

[0035] Camera 314 is electrically connected to microscope body 302. Camera 314 captures images of substrate 120. The images are provided to controller 122. Camera 314 captures images at multiple focal points. Objective lens 308 is coupled to focusing stage 306. Objective lens 308 is an optical element that collects light from an object being observed and focuses the light to produce a real image. Objective lens 308 has a magnification ranging from approximately 4 times to approximately 100 times the magnification of the object being observed.

[0036] The focusing stage 306 is disposed between the microscope body 302 and the objective lens 308. The focusing stage 306 is configured to move in a vertical direction (defined as perpendicular to the surface of the substrate 120 to be measured), causing the objective lens 308 to also move in a substantially vertical direction. The focusing stage 306 is coupled to the piezoelectric motor 304. The piezoelectric motor 304 provides power to the focusing stage 306 to move the objective lens 308. The controller 122 instructs the piezoelectric motor 304 when to provide power to the focusing stage 306. In operation, the objective lens 308 moves in a substantially vertical direction to capture an image of the substrate 120. The focus of the objective lens changes depending on the vertical position. The camera 314 captures an image of the substrate 120 at a different focus at each vertical position.

[0037] Brightfield illumination system 310 includes an illumination controller 316, a first LED 318, a second LED 320, a third LED 322, and a light transmission module 324. Brightfield illumination produces a dark object against a bright background, where the bright background is created by the LEDs. Brightfield illumination system 310 provides brightfield light to input arm 326. Brightfield light from the LEDs (first LED 318, second LED 320, and third LED 322) is directed through microscope body 302 to illuminate substrate 120. First LED 318, second LED 320, and third LED 322 are connected to light transmission module 324. Light transmission module 324 includes one or more dichroic mirrors to transmit light from one or more of first LED 318, second LED 320, and third LED 322 to input arm 326. Brightfield light can be transmitted from light transmission module 324 to input arm 326 via a coaxial fiber optic cable. Each of the first LED 318, the second LED 320, and the third LED 322 is configured to provide brightfield light of a different wavelength. For example, the first LED 318 provides light with a wavelength between approximately 470 nm and approximately 530 nm, the second LED 320 provides light with a wavelength between approximately 365 nm and approximately 590 nm, and the third LED 322 provides light with a wavelength between approximately 617 nm and approximately 850 nm. In some embodiments, the light from the LEDs can be combined in the light delivery module 324 to adjust the wavelength of light delivered to the input arm 326. Because different substrates behave differently, providing different wavelengths to the substrates can improve visibility of the substrates being measured. The illumination controller 316 communicates with the controller 122 and instructs the first LED 318, the second LED 320, and the third LED 322 to provide light to the input arm 326 to improve visibility of the substrate 120. Thus, the brightfield illumination system 310 is configured to provide multi-color illumination to the substrate 120 and is controlled by the illumination controller 316.

[0038] The darkfield illumination system 312 includes a darkfield illuminator 328 and an illumination controller 316. The darkfield illuminator 328 is a light ring with a plurality of LEDs arranged thereon. The darkfield illumination system 312 is positioned between the objective lens 308 and the substrate 120. In some embodiments, which may be combined with other described embodiments, the LEDs are positioned at an angle relative to the surface of the substrate 120 to be measured. The illumination controller 316 is electrically connected to the darkfield illuminator 328. The illumination controller 316 communicates with the controller 122 and instructs the darkfield illuminator 328 to provide light to enhance visibility of the substrate 120. Darkfield illumination creates a dark background around the substrate 120 to enhance visibility and highlight any surface defects.

[0039] In operation, the metrology system 126 is positioned above the substrate 120 to be measured. The darkfield illumination system 312 and the brightfield illumination system 310 illuminate the substrate 120. The objective lens 308 is moved in a substantially vertical direction through the focusing stage 306 while the camera 314 captures an image at each different focus. The images are provided to the controller 122 for assistance.

[0040] Figure 4A A schematic top view of a substrate (eg, substrate 120 ) according to at least one embodiment of the present disclosure is shown. Figure 4B shows at least one embodiment of the present disclosure Figure 4A , is an enlarged top schematic view of a portion of the substrate shown in . In accordance with certain embodiments, substrate 120 includes a substrate layout design 400. As used herein, substrate layout design 400 may be a layout of design elements to be patterned on substrate 120, developed by a designer or designed by a program, or a combination of both. Substrate layout design 400 may include more than one layer for patterning on substrate 120. Multiple layers may be patterned to form a computer processing unit, a graphics processing unit, or the like. Substrate layout design 400 is provided to digital lithography system 200 for patterning on substrate 120 and includes a variety of features, limited only by the design required to meet one or more customer requirements. These features may include connecting lines, logic, transistors, and vias from other layers. Move to Figure 4B , these features may have a designed connection point 410 and, according to some embodiments, may be positioned to connect to another designed connection point on substrate 120 through pixel pattern 412, or to one or more packages 402a-404d (collectively 402). Figure 4B , a design connection point 410 may include both a point and a line extending from the point.

[0041] Reference Figure 4A , the substrate 120 includes one or more packages 402a-402d formed on the substrate 120. Each package 402 includes a set of one or more dies 404a-404d (collectively referred to as 404). The number of packages 402 is not limited to FIG. 4. The number of dies 404 is not limited to FIG. Figure 4A Die 404 may be a pre-assembled / manufactured component that may be placed on substrate 120 during fabrication and, in some embodiments, may be separately fabricated on substrate 120. According to certain embodiments, die 404 may include functional elements that provide functionality as part of substrate layout design 400 and may include functional elements such as memory, processors, dedicated logic, lens arrays, active quantum dots, color filters, light-focusing sidewall mirrors, and other components for additional functionality.

[0042] The substrate 120 includes one or more global alignment marks 406a-406d (collectively, 406), or global marks. The global alignment marks 406 can be patterned by one or more IPSs 210 and positioned for measurement by one or more IPSs and / or metrology systems 126. The global alignment marks 406 have known positions in the lithographic coordinate system of the platform 114 to which the substrate 120 is attached. For example, in some implementations, the measured positions of the global alignment marks 406 are based on the coordinate system of the platform 114 or are easily converted to a platform-coordinated target coordinate system, such as a substrate or metrology coordinate system. The designed positions of the global alignment marks 406 are in a GDS file, and the OTM uses the actual measured positions of the global alignment marks 406 to transfer metrology data to the lithographic coordinate system. Gathering data on the positions of the global alignment marks 406 enables alignment resolution. For example, overlay alignment between multiple layers on the substrate 120 is achieved using the global alignment marks 406. The global alignment mark 406 may have a width in the range of about 50 microns to about 1000 microns, or in the range of about 50 microns to about 500 microns, or in the range of about 100 microns to about 500 microns. Figure 4A Four global alignment marks 406 are shown in FIG. 4 , but any suitable number of alignment marks sufficient to achieve alignment resolution may be used.

[0043] In addition, reference Figure 4B , each die 404 may include a die mark 408a-408d (collectively referred to as 408). In at least one embodiment, the die mark 408 is located on the package 402. The die mark 408 is patterned by one or more IPS 210 and is positioned to be measured by one or more IPS and / or metrology system 126. The die mark 408 has a known position in the lithographic coordinate system of the platform 114 to which the substrate 120 is attached. The die mark 408 is used to indicate the placement of digital correction printing. For example, the position data of the die mark 408 can be used to resolve the offset of the die 404 and the rotation of the die 404. The die mark 408 may have a width in the range of about 20 microns to about 250 microns, or in the range of about 20 microns to about 50 microns, or in the range of about 20 microns to about 40 microns. In at least one embodiment, the die mark 408 has a width of about 50 microns or less. Although Figure 4A In FIG. 4 , four die marks 408 a - 408 d are shown on die 404 a , but any suitable number of die marks may be used. In at least one embodiment, each of the four die marks 408 a - 408 d is positioned at a respective corner of die 404 a .

[0044] Further, refer to Figure 4A, the substrate 120 may include one or more micro-marks 420a-420e (collectively referred to as 420). The micro-marks 420 may be patterned by one or more IPSs 210 and positioned to be measured by one or more IPSs and / or metrology systems 126. In at least one embodiment, the micro-marks 420 are formed on the surface of the substrate 120. The micro-marks 420 may have known positions in the coordinate system of the platform 114 to which the substrate 120 is attached. Collecting data on the positions of the micro-marks 420 can achieve additional alignment resolution. For example, overlay alignment between multiple layers can be achieved by the micro-marks 420. The micro-marks 420 may have a width in the range of about 50 microns to about 1000 microns, or in the range of about 50 microns to about 500 microns, or in the range of about 100 microns to about 500 microns. Although Figure 4A Five micro-marks 420 are shown in FIG. 4 , but any suitable number of micro-marks 420 sufficient to achieve alignment resolution may be used. The micro-marks 420 are generally distinguishable from the global alignment marks 406 in size, shape, or both size and shape. For example, Figure 4A As shown, the micro-mark 420 has a cross shape and the global alignment mark 406 has a star shape. In at least one embodiment, the micro-marks 420a-420e are located between adjacent packages 402a-402d. For example, Figure 4A As shown, micro-mark 420e is located at the intersection of packages 402a-402d, a portion of micro-mark 420a is located between package 402a and package 402c, a portion of micro-mark 420b is located between package 402a and package 402b, a portion of micro-mark 420d is located between package 402b and package 402d, and a portion of micro-mark 420d is located between package 402d and package 402c.

[0045] In at least one embodiment, the global alignment marks 406 may be used to align one or more metrology systems 126 with the substrate 120 .

[0046] In at least one embodiment, the substrate 120 further includes one or more alignment marks 403 or notches. The alignment marks 403 can be used for rough alignment of one or more metrology systems 126, IPS 210, or both with the substrate 120.

[0047] The metrology system 126 is configured to measure the die mark 408, despite its smaller width. Although the global alignment mark 406, the die mark 408, and the micro-mark 420 are Figures 4A-4BAlthough shown as having specific shapes, the shapes of global alignment mark 406, die mark 408, and micro-mark 420 are not limited, as long as each type of mark can be distinguished from the other types of marks. For example, any of global alignment mark 406, die mark 408, and micro-mark 420 can have a circular, square, rectangular, cross, triangular, or other suitable shape. As the width dimension of the mark decreases, metrology system 126 allows imaging of each type of mark.

[0048] Figure 5 A flow chart of a method 500 for package alignment and correction according to at least one embodiment of the present disclosure is shown. The method 500 utilizes an in-line metrology system (IMS) (e.g., in-line metrology system 100) in combination with a digital lithography system (e.g., digital lithography system 200) with on-tool metrology (OTM) to achieve substrate overlay alignment and die placement correction. The method 500 uses the IMS to be used during subsequent patterning processing performed on the digital lithography system 200 to determine correction data to provide overlay alignment accuracy and digital die correction. The correction data will improve the yield of semiconductor devices due to smaller differences from the design files. For ease of explanation, reference is made to Figure 1-4B Method 500 is described below. Although method 500 is described with reference to inline metrology system 100 and digital lithography system 200, other metrology and digital lithography systems may be used to implement method 500. Additionally, although method 500 is described with reference to substrate 120, method 500 may be implemented on other types of substrates, such as semiconductor wafers.

[0049] At operation 510, design data may be obtained. In at least one embodiment, the design data includes a layout design of design elements to be patterned on substrate 120, such as Figure 4A and 4B 4. The substrate layout design 400 depicted in FIG. The layout design can be developed by a designer programmatically, from a manufacturing drawing, or a combination thereof. The layout design may include general position information. This general position information may include coordinate data on the component and the connection pattern to the component in the designed state. The data may include the design position, such as the position of a reference mark, such as a calibration mark, a die mark, a global alignment mark, a micro mark, etc. The data may include the nominal or design position of the die mark relative to the position of the global alignment mark. The data may include the nominal or design position of the die mark relative to the metrology coordinate system of the substrate established by the global alignment mark. The layout design may be stored in a graphic data system file (e.g., "GDS"). However, the file may be in any format that provides graphic data.

[0050] At operation 512, a substrate is loaded into an inline metrology system. For example, a substrate 120 is loaded onto the platform 114 of the inline metrology system 100. In at least one embodiment, the platform 114 includes additional marks (not shown) for aligning the platform 114 with one or more metrology systems 126. The substrate 120 includes one or more packages 402, each package 402 including one or more dies 404a-404d. For illustrative purposes only, the substrate 120 includes one or more calibration marks 403, global alignment marks 406a-406d, and micro-marks 420a-420e on the substrate 120, as well as die marks 408a-408d on one or more dies 404a-404d. The calibration marks 403 can be used to coarsely align the one or more metrology systems 126 with the substrate 120. The global alignment marks 406 are provided on the substrate 120 to establish a metrology coordinate system for the entire substrate 120. The metrology coordinate system can be an XY coordinate system. Die marks 408a-408d are provided on one or more dies 404a-404d to establish the position of the dies 404a-404d on the substrate 120. For example, the die marks 408a-408d are used to determine the offset and rotation of the dies 404a-d relative to the global alignment mark 406, relative to the metrology coordinate system established by the global alignment mark 406, or relative to both the global alignment mark 406 and the metrology coordinate system. In addition, the die marks 408a-408d are used for digital die calibration. Digital die calibration can correct the placement of designed connection points 410 and pixel patterns 412 in subsequent layers patterned on the substrate 120.

[0051] At operation 514, the substrate is scanned with at least one scanning device of the inline metrology system to obtain a first set of coordinate data. For example, the substrate 120 is scanned with one or more metrology systems 126 of the inline metrology system 100 to obtain the first set of coordinate data. The first set of coordinate data may include actual positions of reference marks, such as one or more global alignment marks 406, one or more die marks 408, one or more micro marks 420, the Z height of the reference mark or the substrate, or any combination thereof.

[0052] In operation, the metrology systems 126 of the inline metrology system 100 can be aligned with the global alignment marks 406 on the substrate 120. As the substrate 120 and the platform 114 advance in the x-direction along the track 116, both the substrate 120 and the platform 114 eventually pass under one or more metrology systems 126. As the substrate 120 passes under the one or more metrology systems 126, the one or more metrology systems 126 can capture images of any of the one or more reference marks simultaneously or sequentially.

[0053] For illustrative purposes only, capturing images and actual positions of reference marks, such as one or more global alignment marks 406, one or more die marks 408, one or more micro-marks 420, the Z height of a reference mark or substrate, or any combination thereof, is described as occurring simultaneously. However, there is no temporal limitation on whether the image and position of each reference mark are captured simultaneously with the other reference marks. For example, capturing images and positions of one or more global alignment marks 406 may occur before capturing images of one or more die marks 408.

[0054] refer to Figure 3 In at least one embodiment, during operation 514, the objective lens 308 of the one or more metrology systems 126 is moved in a substantially vertical direction via the focusing stage 306, and the brightfield illumination system 310 provides brightfield light to the input arm 326. The objective lens 308 is moved substantially vertically by the focusing stage 306 to adjust the focus of the objective lens 308. Brightfield light from the LEDs (first LED 318, second LED 320, and third LED 322) is directed through the microscope body 302 to illuminate the substrate 120. The illumination controller 316 communicates with the controller 122 to instruct the darkfield illuminator 328 to provide light to enhance visibility of the substrate 120. The darkfield illumination creates a dark background around the substrate 120 to enhance visibility and highlight any surface defects.

[0055] One or more metrology systems 126 capture multiple images of at least one of the global alignment mark 406, die marks 408a-408d, and micro-marks 420a-420e. A camera 314 in communication with the objective lens 308 captures images at different focal points. Due to the objective lens 308, the camera 314 can capture both the global alignment mark 406 and the die marks 408a-408d. The images are transmitted to the controller 122. An image processing algorithm executed by the controller 122 determines which image is in focus. In one example, the image processing algorithm is an image-based autofocus algorithm, such as a contrast-based global search for the focus position using piezoelectric or phase detection. In at least one embodiment, autofocus data based on the processing history of the IPS 210 from the digital lithography system 200 is obtained from the IPS 210. The autofocus data is used in conjunction with the image processing algorithm to predict which image is in focus. In other embodiments, which may be combined with other described embodiments, the image processing algorithm is calibrated using the autofocus data.

[0056] After scanning the substrate with at least one scanning device of the inline metrology system to obtain the first set of coordinate data at operation 514 , the substrate may be removed from the inline metrology system 100 .

[0057] The image of the global alignment mark 406 captured during operation 514 ensures overlay alignment accuracy. The position of the global alignment mark 406 can be used to establish general position information for the substrate 120. For example, the position of the global alignment mark 406 defines a metrology coordinate system for the substrate 120. An image of the die mark 408 is captured to analyze die offset and rotation of the die 404. For example, the captured image is used to determine the actual position of the die mark 408 relative to the general position information, the global alignment mark 406, or both the general position information and the global alignment mark 406.

[0058] The positions of the global alignment mark 406, die mark 408, and optional micro-marks 420 are determined based on the image. The positions of the global alignment mark 406, die mark 408, and micro-marks 420 are determined based on the focused image. Algorithms such as template-based detection and feature-based detection can be used to detect the mark positions. The positions of the global alignment mark 406, die mark 408, and optional micro-marks 420 are determined relative to a metrology coordinate system. Thus, the positions of the global alignment mark 406, die mark 408, and micro-marks 420 are determined relative to the metrology coordinate system. In at least one embodiment, the metrology coordinate system is calibrated using a lithographic coordinate system. The lithographic coordinate system is the coordinate system that is mapped onto the substrate 120 relative to the IPS 210 of the digital lithography system 200 during subsequent patterning processes. By transferring the metrology coordinate system to the IPS 210, subsequent patterning steps can digitally correct for any placement errors of the die 404.

[0059] At operation 516, the first set of coordinate data including the actual positions of the reference marks is compared to the design data including the designed positions of the reference marks to determine correction data. The actual positions of the global alignment marks 406, the die marks 408, and the optional micro-marks 420 are obtained during operation 514. The actual position data is transmitted to the controller 122 for further processing. The actual positions of the global alignment marks 406, the die marks 408, and the optional micro-marks are compared to a design file (e.g., a GDS file) (e.g., the design file obtained during operation 510). The design file includes the designed positions of the global alignment marks 406, the die marks 408, and the optional micro-marks 420. The differences between the designed and actual positions are compared. For example, the actual position of the die mark 408 relative to the global alignment mark 406, the metrology coordinate system, or both the global alignment mark 406 and the metrology coordinate system is compared to the designed position of the die mark 408 relative to the global alignment mark 406, the metrology coordinate system, or both the global alignment mark 406 and the metrology coordinate system to determine the differences. Based on the differences, the controller 122 determines correction data. The correction data allows compensation for differences between the designed and actual positions so that subsequent patterns will align with the design file.

[0060] The correction data provides updated positions of the designed connection points 410 between the die 404 to be formed in subsequent patterning operations. Furthermore, the difference between the designed and actual positions allows for overlay alignment accuracy when patterning subsequent layers. The difference between the designed and actual positions allows for digital correction printing to correct for die placement errors. In-situ verification of process stability can also be performed based on the difference between the designed and actual positions. The positions of the global alignment marks 406, die marks 408, micro-marks 420, and correction data can be stored in memory, for example, in a universal metrology file (UMF) file, which may also include substrate identification.

[0061] At operation 518, a substrate is loaded into the digital lithography system. For example, the substrate 120 is loaded onto the platform 114 of the digital lithography system 200. In at least one embodiment, the platform 114 includes reference marks (not shown) for aligning the platform 114 with one or more metrology systems 126 and / or the IPS 210 of the digital lithography system 200. The one or more metrology systems 126 and / or the IPS 210 of the digital lithography system 200 can be aligned with the substrate 120 using one or more calibration marks 403.

[0062] In operation 520, the substrate 120 is scanned with at least one scanning device of the digital lithography system 200 to determine the actual position of the global alignment mark 406, thereby confirming the orientation of the substrate. For example, the substrate 120 is scanned with one or more of the metrology system 126, the IPS 210, or both the metrology system 126 and the IPS 210 of the digital lithography system 200 of the inline metrology system 100 to capture an image of the actual position of the global alignment mark 406. The image and actual position of the global alignment mark 406 can be determined as described in operation 514. Because the substrate 120 may shift during transfer from the inline metrology system 100 to the digital lithography system 200, determining the position of the global alignment mark 406 during operation 520 reestablishes general positional information of the substrate 120. For example, the position of the global alignment mark 406 reestablishes the position of a metrology coordinate system. The metrology coordinate system is calibrated with a lithographic coordinate system, which is a coordinate system mapped onto the substrate 120 relative to the IPS 210 of the digital lithography system 200 during subsequent patterning processing in operation 522. By re-establishing the metrology coordinate system and transferring the substrate coordinate system to the IPS 210 , subsequent patterning steps will be able to digitally correct any placement errors of the die 404 .

[0063] At operation 522, the digital lithography system 200 patterns the substrate 120 using the digital correction mask based at least on the correction data obtained during operation 516. The IPS 210 patterns the substrate 120 according to the adjustments determined in operation 516 to better align with the design file. Updated instructions for patterning are provided to the controller 122. In this way, the overlapping layers are aligned and the designed connection points 410 between the dies 404 are positioned according to the design file. After processing at operation 522, the substrate 120 is removed from the digital lithography system 200.

[0064] In at least one embodiment, global alignment and focus data obtained from an on-tool metrology system (e.g., metrology system 126) during operation 520 can be fed back to the inline metrology system 100. This feedback of global alignment data from the digital lithography system 200 to the inline metrology system 100 can improve metrology capture performance. For example, when obtaining metrology data from a subsequently processed substrate, the feedback data from the digital lithography system 200 can be used to optimize the focus performance of the inline metrology system 100, which can reduce the time to capture metrology data from the subsequently processed substrate.

[0065] Figures 6A-6B A flow chart of another method 600 for package alignment and correction according to at least one embodiment of the present disclosure is shown. The method 600 also utilizes an in-line metrology system (IMS) (e.g., in-line metrology system 100) in combination with a digital lithography system (e.g., digital lithography system 200) with on-tool metrology (OTM) to achieve substrate overlay alignment and die placement correction. The method 600 also uses the IMS to be used during subsequent patterning processing performed on the digital lithography system 200 to determine correction data to provide overlay alignment accuracy and digital die correction. The correction data improves the yield of semiconductor devices due to smaller differences from the design files. For ease of explanation, reference is made to Figure 1-4B Method 600 will be described.

[0066] At operation 610 , design data may be obtained, such as a layout design of design elements to be patterned on substrate 120 as described in operation 510 , for example. Figure 4A and Figure 4B The substrate layout design 400 is depicted in FIG.

[0067] In operation 612 , a substrate is loaded onto the platform of the inline metrology system. For example, as described in operation 512 , the substrate 120 is loaded onto the platform 114 of the inline metrology system 100 .

[0068] At operation 614 , the optical module of the inline metrology system is aligned with the substrate. For example, one or more metrology systems 126 on the inline metrology system 100 are aligned with the global alignment mark 406 or other marks (eg, calibration marks 403 formed on the substrate 120 ).

[0069] At operation 616, an image of the global alignment mark formed on the substrate is captured. For example, an image of the global alignment mark 406 formed on the substrate 120 is captured. The global alignment mark 406 defines a metrology coordinate system for the substrate 120. The image of the global alignment mark 406 can also be used to ensure overlay alignment accuracy. The image of the global alignment mark 406 can be captured as described in operation 514. In at least one embodiment, the metrology coordinate system is calibrated using a lithographic coordinate system. The lithographic coordinate system is the coordinate system that is mapped onto the substrate 120 relative to the IPS 210 of the digital lithography system 200 during subsequent patterning processing. By transferring the metrology coordinate system to the IPS 210, subsequent patterning steps performed in the digital lithography system 200 can digitally correct for any placement errors of the die 404.

[0070] At operation 618, an image of the die marks formed on one or more dies 408a-408d formed on the substrate is captured. For example, an image of the die marks 408a-408d formed on the substrate 120 is captured. In at least one embodiment, the surface heights of the die marks 408a-408d are also determined from the image.

[0071] At operation 620, the offset of the die mark is determined. The actual position of the die mark is determined based on the image captured during operation 618. The position of the die marks 408a-408d can be determined relative to the metrology coordinate system established by the global alignment mark 406. The actual position of the die marks 408a-408d is compared with the designed position of the die marks 408a-408d to determine the offset of the die marks 408a-408d. The designed position of the die marks 408a-408d can be determined based on the design data obtained during operation 610. The die mark offset can be used to determine correction data. Information obtained from the die mark, such as the die X offset value, the die Y offset value, the die rotation value, the die scale, the die Z height, and / or the correction data can be stored in memory, such as in a universal metrology file (UMF) file, which can also include substrate identification information. Based on this difference, the controller 122 determines the correction data. The correction data allows for compensation for differences between the designed positions of the dies 402a-402d and the actual positions of the dies 402a-402d so that subsequent patterns will align with the design file.

[0072] At operation 622, the substrate can be removed from the inline metrology system. For example, the substrate 120 is removed from the inline metrology system 100. The substrate 120 can then be subjected to material processing. The orientation of the substrate 120 can shift during material processing.

[0073] At operation 624 , the substrate is loaded onto the platform of the digital lithography system. For example, as described in operation 518 , the substrate 120 is loaded onto the platform 114 of the digital lithography system 200 .

[0074] At operation 625 , the actual position of the global alignment mark is determined to confirm the orientation of the substrate. For example, the actual position of the global alignment mark 406 is determined as described in operation 520 .

[0075] At operation 626, the exposure unit and on-tool metrology of the digital lithography system are aligned with the substrate. For example, the IPS 210 and metrology system 126 of the digital lithography system 200 are aligned with the substrate 120 using global alignment marks 406 or other marks (e.g., calibration marks 403 formed on the substrate 120). The global alignment marks 406 define a metrology coordinate system for the substrate 120. In at least one embodiment, an image of the global alignment marks 406 on the substrate 120 is captured to confirm the orientation of the substrate 120. During the transfer of the substrate from the inline metrology system 100 to the digital lithography system 200, the orientation of the substrate 120 may change. For example, the substrate 120 may shift or rotate during transfer and placement on the platform 114 of the digital lithography system 200. The metrology system 126 of the digital lithography system 200 may be used to capture an image of the global alignment marks 406.

[0076] At operation 630 , a digital correction mask layout is created using the measured die positions. For example, the digital correction mask is created using the measured die positions from operation 620 .

[0077] At operation 632 , the UMF file data with the measurement data from the in-line metrology system is converted to the lithographic coordinate system established by the global alignment marks at operation 626 .

[0078] At operation 634, the digital lithography system 200 patterns the substrate 120 using the digital correction mask based at least on the correction data obtained by the inline metrology system 100. The IPS 210 patterns the substrate 120 according to the adjustments determined in operation 620 to better align with the design file. Updated instructions for patterning are provided to the controller 122. In this way, the overlapping layers are aligned and the designed connection points 410 between the dies 404 are located according to the design file.

[0079] After processing at operation 636, the substrate 120 is removed from the digital lithography system 200 and may be subjected to additional processing.

[0080] Figure 7 A schematic diagram of a digital lithographic printing environment 700 according to at least one embodiment of the present disclosure is shown. As shown, digital lithographic printing environment 700 includes, but is not limited to, an inline metrology system 100, a data storage device 704, a digital lithographic printing system 200, a server 708, and a communication link 701. Additional lithographic printing environment devices, such as the inline metrology system 100, the data storage device 704, the digital lithographic printing system 200, and the server 708, may be included in digital lithographic printing environment 700. Each lithographic printing environment device is operable to connect to each other via a communication link 701. Each lithographic printing environment device is operable to connect to the server 708 via the communication link 701. Alternatively or additionally, each lithographic printing environment device may communicate indirectly by first communicating with the server 708, which then communicates with the lithographic printing environment device in question. Digital lithographic printing environment 700 may be located in the same area or production facility, or each lithographic printing environment device may be located in a different area.

[0081] Each of the plurality of lithographic environment devices is additionally indexed using at least one of the described methods 500 and 600. Each of the online metrology system 100, the data storage device 704, the digital lithographic printing system 200, and the server 708 may include an onboard processor and memory, wherein the memory is configured to store instructions corresponding to any portion of the methods 500 and 600. The communication link 701 may include at least one of a wired connection, a wireless connection, a satellite connection, and the like. According to further described embodiments, the communication link 701 includes sending and receiving a universal metrology file (UMF) or any other file for storing data. The communication link 701 may include temporarily or permanently storing the file or data in the cloud before transferring or copying the file or data to the digital lithographic printing system 200.

[0082] The server 708 includes a central processing unit (CPU) 712, support circuits 714, and optionally a deep learning (DL) module 710. The CPU 712 can be any form of computer processor that can be used in an industrial setting to control devices in a lithographic environment. The DL module 710 is coupled to the CPU 712. Support circuits 714 are coupled to the CPU 712 to support the CPU 712 in a conventional manner. These circuits include caches, power supplies, clock circuits, input / output circuits, subsystems, etc. The server 708 can include the CPU 712 coupled to the support circuits 714 and the input / output (I / O) devices present in the DL module 710.

[0083] The CPU 712 can be a hardware unit or combination of hardware units capable of executing software applications and processing data. In some configurations, the CPU 712 includes a central processing unit (CPU), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a graphics processing unit (GPU), and / or a combination of these units. The CPU 712 is generally configured to execute one or more software applications and process stored media data, each of which can be included in the DL module 710. The server 708 controls the transmission of data and files to and from various lithographic environment devices.

[0084] In summary, a digital lithography system and a method for alignment resolution using the digital lithography system are provided. The metrology system includes an inline metrology system (IMS) combined with an on-tool metrology system (OTM) that can achieve improved substrate overlay alignment and die placement correction. The inline metrology system facilitates high-throughput measurement of inline metrology data for package marks, die marks, global alignment marks, and other marks used to verify process stability and die placement data for digital data correction. This high-throughput inline metrology data can be used to prepare a corrected digital mask for subsequent processing in the digital lithography system. The corrected digital mask provides improved connection placement between adjacent dies. The OTM aligns the inline metrology data with the digital lithography projection head of the digital lithography system and then processes using the corrected digital mask. The IMS and OTM are capable of measuring smaller alignment marks that are currently not measurable by the built-in alignment cameras of the digital lithography projection heads. Feedback of global alignment and focus data from the digital lithography tool to the IMS can improve metrology capture performance.

[0085] Reference is made to specific features (including method operations) of the present disclosure in the Summary of the Invention and embodiments, the claims, and the accompanying drawings. It should be understood that the disclosure in this specification includes all possible combinations of these specific features. For example, when a specific feature is disclosed in the context of a particular aspect, embodiment, or example or specific claim of the present disclosure, the feature can also be used in an extended range of possible combinations with and / or other aspects and embodiments of the present disclosure and generally in the context of the present disclosure.

[0086] As used herein, the term "comprising" and its grammatical equivalents refer to the optional presence of additional components, ingredients, operations, etc. For example, an article "comprising" (or "including") components A, B, and C may consist of (i.e., include only) components A, B, and C, or may include not only components A, B, and C but also one or more other components. Furthermore, whenever a composition, element, or group of elements is preceded by the transition phrase "comprising" or its grammatical equivalents, it is understood that it is contemplated that the same composition or group of elements may be preceded by the transition phrases "consisting essentially of," "consisting of," "selected from the group consisting of," or "is" prior to the recitation of the combination, element, or plurality of elements, and vice versa.

[0087] When reference is made herein to a method that includes two or more defined operations, the defined operations may be performed in any order or concurrently (unless the context excludes such possibility), and the method may include one or more other operations that are performed before any defined operation, between two defined operations, or after all defined operations (unless the context excludes such possibility).

[0088] When introducing elements of the present disclosure or example aspects or embodiments thereof, the articles "a," "an," "the," and "said" are intended to mean that there are one or more of the elements.

[0089] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is to be determined by the claims that follow.

Claims

1. A method for processing a substrate, the method comprising: Loading a substrate onto a platform of an inline metrology tool comprising at least one scanning device, wherein the substrate comprises: one or more packages, the one or more packages including one or more dies having die markings formed on the one or more dies; and one or more global alignment marks, wherein the one or more global alignment marks are formed on the substrate; scanning the substrate with the at least one scanning device to obtain a first set of coordinate data, wherein the first set of coordinate data includes actual positions of the one or more global alignment marks and actual positions of the die marks; establishing general position information of the substrate based on the actual positions of the global alignment marks; determining the actual position of the die mark relative to the general position information; comparing the actual position of the die mark relative to the general position information with a designed position of the die mark relative to the general position information to determine a correction factor; loading the substrate onto a stage of a maskless lithography tool comprising at least one scanning device and at least one image projection system; scanning the substrate with the at least one scanning device of the maskless lithography tool to establish the general position information of the substrate based on the actual positions of the die marks; and A subsequent layer is patterned onto the substrate using a digital correction mask and the at least one image projection system, wherein the digital correction mask is based at least in part on the correction factors. 2 . The method of claim 1 , wherein the one or more global alignment marks have a width in a range from about 50 microns to about 1000 microns.

3. The method of claim 2, wherein the die mark has a width of 50 microns or less.

4. The method of claim 1 , wherein establishing the general position information of the substrate comprises: A universal coordinate system for the substrate is established using the actual positions of the one or more global alignment marks.

5. The method of claim 4 , wherein comparing the actual position of the die mark relative to the general position information with the designed position of the die mark relative to the general position information to determine the correction factor comprises: The actual positions of the die marks relative to the universal coordinate system are compared to determine an offset and a rotation of the one or more dies relative to the universal coordinate system. The method of claim 1 , wherein the first set of coordinate data further comprises a Z height of the substrate.

7. The method of claim 1 , wherein the first set of coordinate data further comprises the actual locations of one or more micro-marks formed on the substrate, wherein the one or more micro-marks are distinguishable from the one or more global alignment marks in size, shape, or both size and shape.

8. The method of claim 7, wherein at least a portion of the one or more micro-markings are positioned between adjacent ones of the one or more packages.

9. The method of claim 1 , wherein scanning the substrate with the at least one scanning device to obtain the first set of coordinate data comprises: An image of the one or more global alignment marks and the die mark is captured.

10. The method of claim 9, wherein capturing an image of the one or more global alignment marks and the die mark comprises: vertically moving a lens of the at least one scanning device to adjust a focus of the lens on the substrate; and Illumination is provided to the substrate by one or more LEDs and illuminators, wherein the image is captured at different focal points by vertically moving the lens.

11. A method for processing a substrate, the method comprising: A substrate is loaded onto a platform of an in-line metrology system, wherein the substrate comprises: one or more packages, the one or more packages including one or more dies, the one or more dies having die markings formed on the one or more dies; a global alignment mark formed on the substrate; and one or more calibration marks, the one or more calibration marks formed on the substrate; capturing an image of the global alignment mark using at least one scanning device associated with the inline metrology system to establish a metrology coordinate system for the substrate; capturing an image of the die marking using the at least one scanning device; determining a position of the die mark relative to the metrology coordinate system established by the global alignment mark; comparing the positions of the global alignment mark and the die mark with a design file to obtain correction data; transferring the substrate to a platform of a digital lithography system; determining the position of the global alignment mark using at least one scanning device associated with the digital lithography system to determine the positioning of the substrate; and Subsequent layers are patterned onto the substrate using a digital correction mask and at least one image projection system, wherein the digital correction mask is based at least in part on the correction data. 12 . The method of claim 11 , wherein the global alignment mark has a width in a range of about 50 microns to about 1000 microns.

13. The method of claim 12, wherein the die mark has a width of 50 microns or less.

14. The method of claim 12, wherein patterning the subsequent layer comprises forming connections between adjacent ones of the one or more dies.

15. The method of claim 11, wherein capturing an image of the global alignment mark and capturing an image of the die mark comprises: vertically moving a lens of the at least one scanning device to adjust a focus of the lens on the substrate; and Illumination is provided to the substrate by one or more LEDs and illuminators, wherein the image is captured at different focal points by vertically moving the lens.

16. The method of claim 11, further comprising capturing an image of one or more micro-marks formed on the substrate using the at least one scanning device, wherein the one or more micro-marks are distinguishable from the global alignment mark in size, shape, or both size and shape.

17. The method of claim 16, wherein at least a portion of the one or more micro-markings are positioned between adjacent ones of the one or more packages.

18. An online metering system, comprising: flat; a movable platform, the movable platform being displaceable above the flat plate, the movable platform being configured to support a substrate; a support member coupled to the plate and having an opening for allowing the movable platform to pass therethrough; and a plurality of metrology systems coupled to the support, wherein each of the one or more metrology systems comprises: Microscope body; a lens coupled to the microscope body; a focusing stage disposed between the microscope body and the lens, wherein the focusing stage is configured to move the lens to adjust the focus of the lens; a camera coupled to the microscope body; a first LED, a second LED, and a third LED coupled to the microscope body, wherein the LEDs transmit light to the microscope body; and An illuminator is arranged below the lens.

19. The in-line metrology system of claim 18, wherein the lens is an objective lens.

20. The in-line metrology system of claim 19, further comprising a controller, wherein the controller is configured to instruct the focusing stage to move the lens to adjust the focus, wherein the camera captures images at a plurality of focal points.