Measurement device and measurement method

Abstract

A measuring instrument according to an exemplary embodiment is provided with: a base substrate having a disk shape; a plurality of first sensors disposed along a peripheral edge of the base substrate; a circuit substrate fixed on the base substrate; and a cover fixed to the circuit board or the base board so as to cover the top of the circuit board. The plurality of first sensors are used for measuring electrostatic capacitance between the first sensors and a first object arranged on the side of the base substrate. The expansion rate of the base substrate is smaller than that of the circuit substrate. The expansion rate of the circuit board is smaller than that of the cover.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a measuring device and a measuring method. Background Art

[0002] Patent Document 1 discloses a substrate-shaped sensor used for calibrating a semiconductor processing system. The substrate-shaped sensor includes a substrate-shaped housing, a power supply unit for supplying power to the sensor, an imaging device for capturing images, a processor for processing the images, and a communication module for transmitting data to an external device.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application No. 2005-521926 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology for measuring electrostatic capacitance with high accuracy in a temperature environment similar to that in which a process is performed.

[0008] Solutions for solving problems

[0009] In an exemplary embodiment, a measuring device is provided. The measuring device has a base substrate having a circular plate shape. The measuring device has a plurality of first sensors arranged along the periphery of the base substrate. The plurality of first sensors are used to measure the electrostatic capacitance between the first object and the base substrate. The measuring device has a circuit substrate fixed to the base substrate. The circuit substrate includes a computing device for controlling the plurality of first sensors. The measuring device has a cover fixed to the circuit substrate or the base substrate in a manner covering the top of the circuit substrate. The expansion rate of the base substrate is smaller than the expansion rate of the circuit substrate. The expansion rate of the circuit substrate is smaller than the expansion rate of the cover.

[0010] Effects of the Invention

[0011] According to the measuring device according to an exemplary embodiment, it is possible to measure capacitance with high accuracy in the same temperature environment as the temperature environment in which a process is performed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a diagram illustrating an example processing system.

[0013] Figure 2 It is a perspective view illustrating an example of an aligner.

[0014] Figure 3 This is a diagram showing an example of a plasma processing apparatus.

[0015] Figure 4 This is a plan view showing an example of a measuring device as viewed from the upper surface side.

[0016] Figure 5 This is a plan view showing an example of a measuring device as viewed from the bottom surface side.

[0017] Figure 6 This is a perspective view showing an example of a first sensor in the measuring instrument.

[0018] Figure 7 It is a cross-sectional view of the first sensor in the measuring device.

[0019] Figure 8 This is an enlarged view showing an example of the second sensor in the measuring instrument.

[0020] Figure 9 This is a diagram illustrating an example of the configuration of a circuit board in a measuring instrument.

[0021] Figure 10 It is along Figure 4 Cross-sectional view of line XX.

[0022] Figure 11 This is a flowchart showing an example of a measurement method using a measuring device. DETAILED DESCRIPTION

[0023] Various exemplary embodiments are described below.

[0024] In an exemplary embodiment, a measuring device is provided. The measuring device has a base substrate having a circular plate shape. The measuring device has a plurality of first sensors arranged along the periphery of the base substrate. The plurality of first sensors are used to measure the electrostatic capacitance between the first object and the base substrate. The measuring device has a circuit substrate fixed to the base substrate. The circuit substrate includes a computing device for controlling the plurality of first sensors. The measuring device has a cover fixed to the circuit substrate or the base substrate in a manner covering the top of the circuit substrate. The expansion rate of the base substrate is smaller than the expansion rate of the circuit substrate. The expansion rate of the circuit substrate is smaller than the expansion rate of the cover.

[0025] In the above-mentioned measuring device, a circuit substrate is fixed on a circular base substrate, and a cover covering the circuit substrate is fixed to the base substrate or the circuit substrate. In the above-mentioned measuring device, the base substrate, the circuit substrate and the cover are constructed in a stacked manner from bottom to top. Moreover, the expansion rate of the base substrate is the smallest, and the expansion rates of the circuit substrate and the cover increase in sequence. In such a structure, when exposed to a high temperature environment similar to the environment in which the process is performed, the deformation (expansion) of the cover is the largest, and the deformation of the circuit substrate and the base substrate decreases in sequence. Therefore, the measuring device deforms in a direction in which the periphery is warped downward in such a way that the cover with a large deformation is pulled by the base substrate with a small deformation. In this case, when the measuring device is placed in a predetermined position, the change in the height position of the periphery of the measuring device is suppressed. That is, even in a high temperature environment, the distance between the measuring device and the first object arranged on the side is not easy to change. The electrostatic capacitance obtained by the first sensor depends on the distance between the first sensor and the first object. Therefore, the electrostatic capacitance can be measured with high precision even in a high temperature environment.

[0026] In an exemplary embodiment, the base substrate may be made of any of single crystal silicon, carbon fiber reinforced plastic, silicon carbide, and aluminum oxide. The circuit substrate may be made of any of glass epoxy resin and polyimide resin. The cover may be made of any of polyetheretherketone resin, polytetrafluoroethylene resin, polyphenylene sulfide resin, and epoxy resin.

[0027] In one exemplary embodiment, the cover may include a first cover and a second cover formed independently of each other. The first cover and the second cover may be secured to the circuit substrate or base substrate using different fastening members. This structure reduces deformation of the cover compared to a case where the cover is integral.

[0028] In an exemplary embodiment, the second cover can be separated from the periphery of the first cover and extend in the radial direction of the base substrate. In this structure, the deformation of the measuring device is in the radial direction, thereby reducing the strain in the circumferential direction, for example.

[0029] In an exemplary embodiment, the first cover may be disposed at the center of the base substrate. The plurality of second covers may be radially disposed around the first cover. In this structure, circumferential deformation dispersion is suppressed.

[0030] In an exemplary embodiment, the circuit substrate may be fixed to the base substrate via an elastic adhesive layer, which can mitigate the effect of the change in the circuit substrate on the base substrate.

[0031] In one exemplary embodiment, the measuring device may further include a plurality of second sensors disposed along the periphery of the base substrate. The plurality of second sensors are configured to measure capacitance with a second object disposed below the base substrate. The height of the lower surfaces of the plurality of second sensors may be offset from the height of the lower surface of the base substrate toward the upper surface of the base substrate. In this configuration, the plurality of second sensors do not support the base substrate.

[0032] In an exemplary embodiment, a measuring method is provided for obtaining a measurement value representing electrostatic capacitance by a measuring device in a chamber of a processing system for performing process treatment. The measuring method includes a process of controlling the temperature environment in the chamber. The measuring method includes a process of transporting the measuring device to an electrostatic holding disk in a chamber whose temperature environment is controlled by a transport device. The measuring method includes a process of causing the measuring device transported to the electrostatic holding disk to be adsorbed on the electrostatic holding disk. The measuring method includes a process of obtaining a measurement value representing electrostatic capacitance between the measuring device adsorbed on the electrostatic holding disk and an edge ring surrounding the measuring device. In this method, the strain of the measuring device is suppressed by adsorbing the measuring device to the electrostatic holding disk.

[0033] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same or corresponding parts are marked with the same reference numerals.

[0034] First, a processing system including a processing device for processing a workpiece and a conveying device for conveying the workpiece to the processing device will be described. Figure 1 This diagram illustrates an example processing system. Processing system 1 functions as semiconductor manufacturing equipment S1. Processing system 1 includes stages 2a-2d, containers 4a-4d, a loader module LM, an aligner AN, load lock modules LL1 and LL2, process modules PM1-PM6, a transfer module TF, and a control unit MC. The number of stages 2a-2d, containers 4a-4d, load lock modules LL1 and LL2, and process modules PM1-PM6 is not limited and can be any number, one or more.

[0035] Tables 2a to 2d are arranged along one side of the loader module LM. Containers 4a to 4d are mounted on the tables 2a to 2d, respectively. Each container 4a to 4d is, for example, a FOUP (Front Opening Unified Pod). Each container 4a to 4d can be configured to accommodate a workpiece W. The workpiece W has a roughly disk shape, like a wafer.

[0036] The loading module LM has a chamber wall defining a transfer space within the loading module LM at atmospheric pressure. A transfer unit TU1 is installed within this transfer space. The transfer unit TU1 is, for example, a multi-jointed robot and is controlled by a control unit MC. The transfer unit TU1 is configured to transfer workpieces W between the containers 4a-4d and the aligner AN, between the aligner AN and the load lock modules LL1-LL2, and between the load lock modules LL1-LL2 and the containers 4a-4d.

[0037] The aligner AN is connected to the loader module LM and is configured to adjust the position of the workpiece W (calibrate the position). Figure 2 This is a perspective view illustrating an alignment device. The alignment device AN includes a support table 6T, a drive device 6D, and a sensor 6S. The support table 6T is a table that can rotate about an axis extending in the vertical direction and is configured to support a workpiece W on the support table 6T. The support table 6T is rotated by the drive device 6D. The drive device 6D is controlled by a control unit MC. When the support table 6T rotates using the power from the drive device 6D, the workpiece W placed on the support table 6T also rotates.

[0038] The sensor 6S is an optical sensor that detects the edge of the workpiece W while it is rotating. Based on the edge detection results, the sensor 6S detects the offset of the angular position of the notch WN (or another mark) on the workpiece W from the reference angular position, as well as the offset of the center position of the workpiece W from the reference position. The sensor 6S outputs the offset of the angular position of the notch WN and the offset of the center position of the workpiece W to the control unit MC. Based on the offset of the angular position of the notch WN, the control unit MC calculates the rotation amount of the support table 6T to correct the angular position of the notch WN to the reference angular position. The control unit MC controls the drive unit 6D to rotate the support table 6T by the specified amount. This allows the angular position of the notch WN to be corrected to the reference angular position. Furthermore, based on the offset of the center position of the workpiece W, the control unit MC controls the position of the end effector of the transport unit TU1 when the workpiece W is received from the aligner AN. This ensures that the center position of the workpiece W is aligned with a predetermined position on the end effector of the transport unit TU1.

[0039] Return to Figure 1 Each of the load lock modules LL1 and LL2 is provided between the load module LM and the transfer module TF, and each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber.

[0040] The transfer module TF is airtightly connected to the load lock module LL1 and the load lock module LL2 via gate valves. The transfer module TF provides a decompression chamber capable of reducing pressure. A transfer device TU2 is provided in the decompression chamber. The transfer device TU2 is, for example, a multi-jointed robot having a transfer arm TUa and is controlled by a control unit MC. The transfer device TU2 is configured to transfer workpieces W between the load lock modules LL1-LL2 and the process modules PM1-PM6, and between any two of the process modules PM1-PM6.

[0041] The process modules PM1 to PM6 are airtightly connected to the transfer module TF via gate valves. Each of the process modules PM1 to PM6 is a processing device configured to perform a dedicated process such as plasma processing on a workpiece W.

[0042] The following is an example of the sequence of operations performed when processing a workpiece W in this processing system 1. The transport unit TU1 of the loader module LM removes the workpiece W from any of the containers 4a-4d and transports it to the aligner AN. Next, the transport unit TU1 removes the adjusted workpiece W from the aligner AN and transports it to one of the load lock modules LL1 and LL2. The load lock module then reduces the pressure in the preliminary decompression chamber to a predetermined level. Next, the transport unit TU2 of the transfer module TF removes the workpiece W from one of the load lock modules and transports it to one of the process modules PM1-PM6. One or more of the process modules PM1-PM6 then processes the workpiece W. The transport unit TU2 then transports the processed workpiece W from the process module to one of the load lock modules LL1 and LL2. Next, the transport unit TU1 transports the workpiece W from one load-lock module to any one of the containers 4 a to 4 d.

[0043] As described above, the processing system 1 includes a control unit MC. The control unit MC can be a computer including a processor, a storage device such as a memory, a display device, an input / output device, a communication device, and the like. The aforementioned series of operations of the processing system 1 are achieved by the control unit MC controlling the various components of the processing system 1 according to a program stored in a storage device.

[0044] Figure 3 1 is a diagram showing an example of a plasma processing apparatus that can be employed as any of the process modules PM1 to PM6 . Figure 3The plasma processing apparatus 10 shown is a capacitively coupled plasma etching apparatus. The plasma processing apparatus 10 includes a substantially cylindrical chamber body 12. The chamber body 12 is formed, for example, of aluminum. The inner wall surface of the chamber body 12 can be anodized. The chamber body 12 is protectively grounded.

[0045] A generally cylindrical support portion 14 is provided at the bottom of the chamber body 12. The support portion 14 is made of, for example, an insulating material. The support portion 14 is disposed within the chamber body 12 and extends upward from the bottom of the chamber body 12. Furthermore, a worktable ST is provided within the chamber S defined by the chamber body 12. The worktable ST is supported by the support portion 14.

[0046] The worktable ST includes a lower electrode LE and an electrostatic chuck (ESC). The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of a metal such as aluminum. The first plate 18a and the second plate 18b are generally disc-shaped. The second plate 18b is disposed on the first plate 18a and is electrically connected to the first plate 18a.

[0047] An electrostatic holding disk (ESC) is provided on the second plate 18b. The ESC has a structure in which a conductive film electrode is disposed between a pair of insulating layers or sheets. The ESC has a generally disc-shaped structure. The electrodes of the ESC are electrically connected to a DC power supply 22 via a switch 23. The ESC attracts the workpiece W using electrostatic forces such as Coulomb force generated by the DC voltage from the DC power supply 22. This allows the ESC to hold the workpiece W.

[0048] An edge ring ER is placed on the peripheral edge of the second plate 18b. The edge ring ER is formed into, for example, a circular ring shape. When the edge ring ER is placed on the second plate 18b, the edge ring ER surrounds the electrostatic holding disk ESC when viewed from above. That is, the electrostatic holding disk ESC is located within the area surrounded by the edge ring ER. When a workpiece W is conveyed onto the electrostatic holding disk ESC, the edge ring ER surrounds the edge of the workpiece W. That is, the workpiece W is located within the area surrounded by the edge ring ER. Similarly, when a measuring device 100, described later, is conveyed onto the electrostatic holding disk ESC, the edge ring ER surrounds the edge of the measuring device 100. That is, the measuring device 100 is located within the area surrounded by the edge ring ER.

[0049] A refrigerant flow path 24 is provided within the second plate 18b. The refrigerant flow path 24 constitutes a temperature control mechanism. Refrigerant is supplied to the refrigerant flow path 24 from a cooling unit located outside the chamber body 12 via a pipe 26a. The refrigerant supplied to the refrigerant flow path 24 returns to the cooling unit via a pipe 26b. In this manner, the refrigerant circulates between the refrigerant flow path 24 and the cooling unit. By controlling the temperature of this refrigerant, the temperature of the workpiece W supported by the electrostatic holding disk ESC is controlled.

[0050] The workbench ST is formed with a plurality of (for example, three) through holes 25 that penetrate the workbench ST. When viewed from above, the plurality of through holes 25 are formed on the inner side of the electrostatic chuck ESC. Lifting pins 25a are inserted into each of these through holes 25. Figure 3 In FIG. 1 , a through hole 25 into which a lift pin 25a is inserted is shown. The lift pin 25a is provided so as to be movable up and down in the through hole 25. The workpiece W supported by the electrostatic holding disk ESC is lifted by the lifting pin 25a.

[0051] In the workbench ST, a plurality of (for example, three) through holes 27 are formed on the outside of the electrostatic holding disk ESC when viewed from above, penetrating the workbench ST (lower electrode LE). Lifting pins 27a are inserted into each of these through holes 27. Figure 3 In FIG. 1 , a through hole 27 into which a lift pin 27a is inserted is shown. The lift pin 27a is provided so as to be movable up and down in the through hole 27. As the lift pin 27a rises, the edge ring ER supported on the second plate 18b rises.

[0052] The plasma processing apparatus 10 is also provided with a gas supply line 28. The gas supply line 28 is used to supply a heat transfer gas, such as He gas, from a heat transfer gas supply mechanism between the upper surface of the electrostatic holding disk ESC and the back surface of the workpiece W.

[0053] The plasma processing apparatus 10 also includes an upper electrode 30. The upper electrode 30 is positioned above the worktable ST and faces the worktable ST. The upper electrode 30 is supported on the upper portion of the chamber body 12 via an insulating shielding member 32. The upper electrode 30 may include a top plate 34 and a support 36. The top plate 34 faces the chamber S. A plurality of gas ejection holes 34a are provided in the top plate 34. The top plate 34 may be formed of silicon or quartz. Alternatively, the top plate 34 may be formed by forming a plasma-resistant film such as yttrium oxide on the surface of an aluminum base material.

[0054] The support body 36 is a component that supports the top plate 34 in a removable manner. The support body 36 can be made of a conductive material such as aluminum. The support body 36 can have a water-cooling structure. A gas diffusion chamber 36a is provided within the support body 36. A plurality of gas flow holes 36b extend downward from the gas diffusion chamber 36a and communicate with the gas ejection holes 34a. In addition, a gas inlet 36c for introducing processing gas into the gas diffusion chamber 36a is formed in the support body 36. The gas inlet 36c is connected to the gas supply pipe 38.

[0055] The gas supply pipe 38 is connected to a gas source assembly 40 via a valve assembly 42 and a flow controller assembly 44. The gas source assembly 40 includes multiple gas sources for various gases. The valve assembly 42 includes multiple valves, and the flow controller assembly 44 includes multiple flow controllers such as mass flow controllers. The multiple gas sources in the gas source assembly 40 are connected to the gas supply pipe 38 via corresponding valves in the valve assembly 42 and corresponding flow controllers in the flow controller assembly 44.

[0056] Furthermore, in the plasma processing apparatus 10, a deposit shield 46 is detachably provided along the inner wall of the chamber body 12. The deposit shield 46 is also provided on the outer periphery of the support portion 14. The deposit shield 46 is a component for preventing etching byproducts (deposits) from adhering to the chamber body 12. The deposit shield 46 can be formed by coating an aluminum member with a ceramic such as yttrium oxide.

[0057] An exhaust plate 48 is provided on the bottom side of the chamber body 12 and between the side wall of the chamber body 12 and the support portion 14. The exhaust plate 48 can be formed, for example, by covering an aluminum member with a ceramic such as yttrium oxide. A plurality of holes are formed in the exhaust plate 48 that pass through the exhaust plate 48 in the direction of its plate thickness. An exhaust port 12e is provided below the exhaust plate 48 and in the chamber body 12. The exhaust port 12e is connected to the exhaust device 50 via an exhaust pipe 52. The exhaust device 50 has a pressure regulating valve and a vacuum pump such as a turbomolecular pump. The exhaust device 50 can reduce the pressure in the space within the chamber body 12 to the desired vacuum level. In addition, a loading and unloading port 12g for the workpiece W is provided on the side wall of the chamber body 12, and the loading and unloading port 12g can be opened and closed by a gate valve 54.

[0058] The plasma processing apparatus 10 further includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply that generates a first high-frequency power for plasma generation. The first high-frequency power supply 62 generates a high-frequency power supply having a frequency of, for example, 27 MHz to 100 MHz. The first high-frequency power supply 62 is connected to the upper electrode 30 via a matching device 66. The matching device 66 includes a circuit for matching the output impedance of the first high-frequency power supply 62 with the input impedance of the load side (the upper electrode 30 side). The first high-frequency power supply 62 may also be connected to the lower electrode LE via the matching device 66.

[0059] The second high-frequency power supply 64 generates a second high-frequency power source for attracting ions toward the workpiece W. For example, the second high-frequency power supply 64 generates a high-frequency power source within a range of 400 kHz to 13.56 MHz. The second high-frequency power supply 64 is connected to the lower electrode LE via a matching device 68. The matching device 68 includes a circuit for matching the output impedance of the second high-frequency power supply 64 with the input impedance on the load side (the lower electrode LE side).

[0060] In this plasma processing apparatus 10, gas from one or more gas sources selected from a plurality of gas sources is supplied to a chamber S. Furthermore, the pressure of the chamber S is set to a predetermined pressure by an exhaust device 50. Furthermore, a first high-frequency power supply 62 excites the gas within the chamber S. This generates plasma. The generated active species then process the workpiece W. Furthermore, as needed, a second high-frequency bias generated by a second high-frequency power supply 64 can be used to attract ions toward the workpiece W.

[0061] Next, the measuring device 100 will be described. Figure 4 It is a top view showing the measuring device as viewed from the upper surface side. Figure 5 The measuring device 100 includes a base substrate 102 , first sensors 104 ( 104A to 104C), second sensors 105 ( 105A to 105C), a circuit board 106 , and a cover 103 .

[0062] The base substrate 102 has a shape similar to that of the workpiece W, namely, a roughly disk-shaped shape. The diameter of the base substrate 102 is the same as that of the workpiece W, for example, 300 mm. The shape and dimensions of the measuring device 100 are determined by the shape and dimensions of the base substrate 102. Therefore, the measuring device 100 has the same shape and dimensions as the workpiece W. Furthermore, a notch 102N (or another marking) is formed on the edge of the base substrate 102.

[0063] The plurality of first sensors 104A to 104C are sensors for measuring electrostatic capacitance. The plurality of first sensors 104A to 104C are arranged at equal intervals along the edge of the base substrate 102, for example, along the entire circumference of the edge. Specifically, each of the plurality of first sensors 104A to 104C is arranged along the edge of the upper surface 102a of the base substrate 102. The front end surface of each of the plurality of first sensors 104A to 104C is along the side surface of the base substrate 102. Therefore, the plurality of first sensors 104A to 104C can measure the electrostatic capacitance between the plurality of first sensors 104A to 104C and an object (first object) arranged on the side of the base substrate 102. For example, when the measuring device 100 is placed on the electrostatic holding disk ESC, the plurality of first sensors 104A to 104C can measure the electrostatic capacitance between the plurality of first sensors 104A to 104C and the inner surface of the edge ring ER surrounding the periphery of the electrostatic holding disk ESC.

[0064] The plurality of second sensors 105A-105C are sensors for measuring electrostatic capacitance. The plurality of second sensors 105A-105C are arranged at equal intervals in the circumferential direction along the edge of the base substrate 102, for example, along the entire circumference of the edge. The second sensors 105A-105C and the first sensors 104A-104C are arranged alternately at 60° intervals in the circumferential direction. Each of the plurality of second sensors 105A-105C is arranged along the edge of the lower surface 102b of the base substrate 102. The sensor electrode 161 of each of the plurality of second sensors 105A-105C extends along the direction in which the lower surface 102b of the base substrate 102 extends. Therefore, the plurality of second sensors 105A-105C can measure the electrostatic capacitance between the plurality of second sensors 105A-105C and an object (second object) disposed below the base substrate 102. For example, when the measuring device 100 is placed on the electrostatic holding disk ESC, the plurality of second sensors 105A-105C can measure the electrostatic capacitance between the plurality of second sensors 105A-105C and the electrostatic holding disk ESC. In the following description, the first sensors 104A to 104C and the second sensors 105A to 105C may be collectively referred to as capacitance sensors.

[0065] As described later, the circuit board 106 includes a computing device for controlling the electrostatic capacitance sensor. The circuit board 106 is disposed on the upper surface 102a of the base substrate 102. In the illustrated example, the circuit board 106 extends in the center of the upper surface 102a of the base substrate 102 and extends radially from the center toward the first sensor 104 or the second sensor 105 disposed on the periphery of the base substrate 102.

[0066] The cover 103 covers the circuit substrate 106. That is, when the measuring device 100 is viewed from above, the circuit substrate 106 can be covered by the cover 103. In an exemplary embodiment, the cover 103 may include a first cover 103A and a second cover 103B formed independently of each other. The first cover 103A covers the portion of the circuit substrate 106 that extends from the center of the upper surface 102a. The first cover 103A in the illustrated example is hexagonal. The second cover 103B covers the portion of the circuit substrate 106 that extends from the center toward the first sensor 104 or the second sensor 105. In the illustrated example, the second cover 103B is rectangular. A plurality of second covers 103B are separated from the periphery of the first cover 103A and are arranged radially along the radial direction of the base substrate 102.

[0067] Next, the first sensor will be described in detail. Figure 6 It is a perspective view showing an example of a sensor. Figure 7 It is along Figure 6 Cross-sectional view taken along line VII-VII. Figure 6 and Figure 7 The first sensor 104 shown is configured as a chip-shaped component in one example. In the following description, reference is made to an XYZ orthogonal coordinate system. The X direction indicates the front direction of the first sensor 104. The Y direction is a direction perpendicular to the X direction and indicates the width of the first sensor 104. The Z direction is a direction perpendicular to both the X and Y directions and indicates the upward direction of the first sensor 104.

[0068] The first sensor 104 includes an electrode 141 , a guard electrode 142 , a sensor electrode 143 , a substrate portion 144 , and an insulating region 147 .

[0069] Substrate 144 is formed, for example, from borosilicate glass or quartz. It has an upper surface 144a, a lower surface 144b, and a front end surface 144c. A protective electrode 142 is disposed below lower surface 144b of substrate 144, extending in the X and Y directions. Furthermore, electrode 141 is disposed below protective electrode 142, with an insulating region 147 interposed therebetween, extending in the X and Y directions. Insulating region 147 is formed, for example, from SiO2, SiN, Al2O3, or polyimide.

[0070] The front end surface 144c of the substrate portion 144 is formed in a stepped shape. The lower portion 144d of the front end surface 144c protrudes horizontally outward from the upper portion 144u of the front end surface 144c. The sensor electrode 143 extends along the upper portion 144u of the front end surface 144c. In an exemplary embodiment, the upper portion 144u and the lower portion 144d of the front end surface 144c are each curved surfaces having a predetermined curvature. That is, the upper portion 144u of the front end surface 144c has a constant curvature at any position on the upper portion 144u, and the curvature of the upper portion 144u is the reciprocal of the distance between the central axis AX100 of the measuring device 100 and the upper portion 144u of the front end surface 144c. The lower portion 144d of the front end surface 144c has a constant curvature at any position thereof, and the curvature of the lower portion 144d is the reciprocal of the distance between the central axis AX100 of the measuring instrument 100 and the lower portion 144d of the front end surface 144c.

[0071] The sensor electrode 143 is provided along the upper portion 144u of the front end surface 144c. In one exemplary embodiment, the front surface 143f of the sensor electrode 143 is also curved. Specifically, the front surface 143f of the sensor electrode 143 has a constant curvature at any position on the front surface 143f, and this curvature is the reciprocal of the distance between the central axis AX100 of the measuring device 100 and the front surface 143f.

[0072] When the first sensor 104 is used as a sensor of the measuring device 100 , as described later, the electrode 141 is connected to the wiring 181 , the guard electrode 142 is connected to the wiring 182 , and the sensor electrode 143 is connected to the wiring 183 .

[0073] In the first sensor 104, the sensor electrode 143 is shielded from the lower portion of the first sensor 104 by the electrode 141 and the guard electrode 142. Therefore, the first sensor 104 can measure capacitance with high directivity in a specific direction, that is, the direction (X direction) in which the front surface 143f of the sensor electrode 143 faces.

[0074] Next, the second sensor will be described. Figure 8 yes Figure 5A partially enlarged view shows a second sensor. The second sensor 105 is configured as a chip-shaped component in one example, and has a sensor electrode 161. The edge of the sensor electrode 161 is partially arc-shaped. For example, the sensor electrode 161 has a planar shape defined by an inner edge 161a, an outer edge 161b, and a side edge 161c. As an example, the outer edge 161b is in the shape of an arc having a radius centered on the central axis AX100, and the side edge 161c and the inner edge 161a are straight lines. The radially outer edges 161b of the sensor electrodes 161 of each of the plurality of second sensors 105A to 105C extend on a common circle. The curvature of a portion of the edge of the sensor electrode 161 is consistent with the curvature of the edge of the electrostatic holding disk ESC. In an exemplary embodiment, the curvature of the outer edge 161b forming the radially outer edge of the sensor electrode 161 is consistent with the curvature of the edge of the electrostatic holding disk ESC. Furthermore, the center of curvature of the outer edge 161 b , that is, the center of the circle on which the outer edge 161 b extends, shares the central axis AX100 .

[0075] In an exemplary embodiment, second sensor 105 further includes a guard electrode 162 surrounding sensor electrode 161. Guard electrode 162 has a frame shape and surrounds sensor electrode 161 along its entire circumference. Guard electrode 162 and sensor electrode 161 are separated from each other to form an electrically insulating region 164 therebetween. Furthermore, in an exemplary embodiment, second sensor 105 further includes an electrode 163 surrounding guard electrode 162 on its outer side. Electrode 163 has a frame shape and surrounds guard electrode 162 along its entire circumference. Guard electrode 162 and electrode 163 are separated from each other to form an electrically insulating region 165 therebetween.

[0076] Next, the structure of the circuit board 106 will be described. Figure 9 This diagram illustrates the configuration of a circuit board of a measuring device. Circuit board 106 includes a high-frequency oscillator 171, multiple C / V conversion circuits 172A to 172C, multiple C / V conversion circuits 272A to 272C, an A / D converter 173, a processor 174, a storage device 175, a communication device 176, and a power supply 177. In one example, processor 174, storage device 175, and the like constitute a control unit (computing device).

[0077] Each of the plurality of first sensors 104A to 104C is connected to the circuit board 106 via a corresponding wiring group among the plurality of wiring groups 108A to 108C. Furthermore, each of the plurality of first sensors 104A to 104C is connected to a corresponding C / V conversion circuit among the plurality of C / V conversion circuits 172A to 172C via several wirings included in the corresponding wiring group. Each of the plurality of second sensors 105A to 105C is connected to the circuit board 106 via a corresponding wiring group among the plurality of wiring groups 208A to 208C. Furthermore, each of the plurality of second sensors 105A to 105C is connected to a corresponding C / V conversion circuit among the plurality of C / V conversion circuits 272A to 272C via several wirings included in the corresponding wiring group. Next, we will describe a first sensor 104 having the same structure as each of the first sensors 104A to 104C, a wiring group 108 having the same structure as each of the wiring groups 108A to 108C, and a C / V conversion circuit 172 having the same structure as each of the C / V conversion circuits 172A to 172C. Furthermore, we will describe a second sensor 105 having the same structure as each of the second sensors 105A to 105C, a wiring group 208 having the same structure as each of the wiring groups 208A to 208C, and a C / V conversion circuit 272 having the same structure as each of the C / V conversion circuits 272A to 272C.

[0078] Wiring group 108 includes wirings 181 to 183. Wiring 181 has one end connected to electrode 141. Wiring 181 is connected to a ground line GL connected to ground G of circuit board 106. Wiring 181 can also be connected to ground line GL via switch SWG. Wiring 182 has one end connected to guard electrode 142, and the other end connected to C / V conversion circuit 172. Wiring 183 has one end connected to sensor electrode 143, and the other end connected to C / V conversion circuit 172.

[0079] Wiring group 208 includes wirings 281 to 283. Wiring 281 has one end connected to electrode 163. Wiring 281 is connected to a ground line GL connected to ground G of circuit board 106. Wiring 281 can also be connected to ground line GL via switch SWG. Wiring 282 has one end connected to guard electrode 162, and the other end connected to C / V conversion circuit 272. Wiring 283 has one end connected to sensor electrode 161, and the other end connected to C / V conversion circuit 272.

[0080] The high-frequency oscillator 171 is connected to a power source 177, such as a battery, and is configured to receive power from the power source 177 to generate a high-frequency signal. Furthermore, the power source 177 is connected to the processor 174, the storage device 175, and the communication device 176. The high-frequency oscillator 171 has multiple output lines. The high-frequency oscillator 171 supplies the generated high-frequency signal to the wiring 182 and wiring 183, as well as the wiring 282 and wiring 283, via the multiple output lines. Thus, the high-frequency oscillator 171 is electrically connected to the guard electrode 142 and the sensor electrode 143 of the first sensor 104, and the high-frequency signal from the high-frequency oscillator 171 is supplied to the guard electrode 142 and the sensor electrode 143. Furthermore, the high-frequency oscillator 171 is electrically connected to the sensor electrode 161 and the guard electrode 162 of the second sensor 105, and the high-frequency signal from the high-frequency oscillator 171 is supplied to the sensor electrode 161 and the guard electrode 162.

[0081] The input of C / V conversion circuit 172 is connected to wiring 182 connected to guard electrode 142 and wiring 183 connected to sensor electrode 143. Specifically, the input of C / V conversion circuit 172 is connected to guard electrode 142 and sensor electrode 143 of first sensor 104. Furthermore, the input of C / V conversion circuit 272 is connected to sensor electrode 161 and guard electrode 162, respectively. C / V conversion circuit 172 and C / V conversion circuit 272 are configured to generate and output voltage signals having an amplitude corresponding to the potential difference between their inputs. C / V conversion circuit 172 generates a voltage signal corresponding to the capacitance formed by the corresponding first sensor 104. Specifically, the greater the capacitance of the sensor electrode connected to C / V conversion circuit 172, the greater the magnitude of the voltage signal output by C / V conversion circuit 172. Similarly, the greater the capacitance of the sensor electrode connected to C / V conversion circuit 272, the greater the magnitude of the voltage signal output by C / V conversion circuit 272.

[0082] The input of A / D converter 173 is connected to the outputs of C / V conversion circuit 172 and C / V conversion circuit 272. Furthermore, A / D converter 173 is connected to processor 174. A / D converter 173 is controlled by a control signal from processor 174, converts the output signal (voltage signal) of C / V conversion circuit 172 and the output signal (voltage signal) of C / V conversion circuit 272 into digital values, and outputs the digital values ​​to processor 174 as detection values.

[0083] Processor 174 is connected to storage device 175. Storage device 175 is a storage device such as volatile memory and is configured to store, for example, measurement data. Processor 174 is also connected to another storage device 178. Storage device 178 is a storage device such as nonvolatile memory and stores, for example, programs read and executed by processor 174.

[0084] The communication device 176 is a communication device that complies with any wireless communication standard. For example, the communication device 176 complies with Bluetooth (registered trademark). The communication device 176 is configured to wirelessly transmit the measurement data stored in the storage device 175.

[0085] Processor 174 is configured to control various components of measuring device 100 by executing the aforementioned program. For example, processor 174 controls the supply of high-frequency signals from high-frequency oscillator 171 to guard electrode 142, sensor electrode 143, sensor electrode 161, and guard electrode 162. Processor 174 also controls the supply of power from power supply 177 to storage device 175 and the supply of power from power supply 177 to communication device 176. Furthermore, by executing the aforementioned program, processor 174 acquires the measurement values ​​of first sensor 104 and second sensor 105 based on the detection values ​​input from A / D converter 173. In one embodiment, when the detection value output from A / D converter 173 is X, processor 174 acquires the measurement value based on the detection value so that the measurement value becomes proportional to (a·X+b). Here, a and b are constants that vary depending on, for example, circuit conditions. For example, the processor 174 may include a predetermined calculation expression (function) such that the measured value becomes a value proportional to (a·X+b).

[0086] In the measuring device 100 described above, when the measuring device 100 is placed in an area surrounded by the edge ring ER, the multiple sensor electrodes 143 and the guard electrode 142 face the inner edge of the edge ring ER. The measured values ​​generated based on the potential difference between the signals of the sensor electrodes 143 and the signals of the guard electrode 142 represent the electrostatic capacitance that reflects the distance between each of the multiple sensor electrodes 143 and the edge ring ER. Furthermore, the electrostatic capacitance C is expressed as C = εS / d. ε is the dielectric constant of the medium between the front surface 143f of the sensor electrode 143 and the inner edge of the edge ring ER, S is the area of ​​the front surface 143f of the sensor electrode 143, and d can be considered the distance between the front surface 143f of the sensor electrode 143 and the inner edge of the edge ring ER.

[0087] Therefore, the measuring device 100 obtains measurement data reflecting the relative positional relationship between the measuring device 100 and the edge ring ER, which simulates the workpiece W. For example, the larger the distance between the front surface 143f of the sensor electrode 143 and the inner edge of the edge ring ER, the smaller the multiple measurement values ​​obtained by the measuring device 100. Therefore, based on the measured values ​​representing the electrostatic capacitance of the sensor electrodes 143 of each of the first sensors 104A to 104C, the offset amount of each sensor electrode 143 in each radial direction of the edge ring ER can be determined. Furthermore, based on the offset amount of each sensor electrode 143 in each of the first sensors 104A to 104C in each radial direction, the error in the transport position of the measuring device 100 can be determined.

[0088] When the measuring device 100 is placed on the electrostatic holding disk ESC, the multiple sensor electrodes 161 and the guard electrode 162 face the electrostatic holding disk ESC. As described above, the capacitance C is expressed as C = εS / d. ε is the dielectric constant of the medium between the sensor electrode 161 and the electrostatic holding disk ESC, d is the distance between the sensor electrode 161 and the electrostatic holding disk ESC, and S can be considered the area of ​​overlap between the sensor electrode 161 and the electrostatic holding disk ESC when viewed from above. Area S varies depending on the relative positional relationship between the measuring device 100 and the electrostatic holding disk ESC. Therefore, the measuring device 100 obtains measurement data reflecting the relative positional relationship between the measuring device 100 and the electrostatic holding disk ESC, which simulates the workpiece W.

[0089] In one example, when measuring instrument 100 is transported to a predetermined transport position, i.e., a position on the electrostatic holding disk ESC where the center of the electrostatic holding disk ESC coincides with the center of measuring instrument 100, outer edge 161b of sensor electrode 161 may coincide with the edge of the electrostatic holding disk ESC. In this case, if, for example, sensor electrode 161 deviates radially outward relative to the electrostatic holding disk ESC due to the transport position of measuring instrument 100 shifting from the predetermined transport position, area S decreases. In other words, the capacitance measured by sensor electrode 161 decreases compared to the capacitance obtained when measuring instrument 100 is transported to the predetermined transport position. Therefore, the amount of displacement of each sensor electrode 161 in each radial direction of the electrostatic holding disk ESC can be determined based on the measured capacitance values ​​of sensor electrode 161 of each of second sensors 105A-105C. Furthermore, the error in the transport position of the measuring device 100 can be obtained based on the amount of displacement in each radial direction of the sensor electrode 161 of each of the second sensors 105A to 105C.

[0090] The measuring device 100 will be further described. Figure 10 It is along Figure 4The cross-sectional view taken along line XX schematically shows the cross-sectional structure of the measuring device 100. Figure 10 As shown, the measuring device 100 includes a base substrate 102, a first sensor 104 disposed on the upper surface 102a of the base substrate 102, and a second sensor 105 disposed on the lower surface 102b of the base substrate 102. Furthermore, the measuring device 100 includes a circuit substrate 106 disposed on the upper surface 102a of the base substrate 102, and a cover 103 disposed to cover the circuit substrate 106.

[0091] As described above, in measuring instrument 100 according to an exemplary embodiment, base substrate 102, circuit substrate 106, and cover 103 are stacked vertically. The expansion rates of base substrate 102, circuit substrate 106, and cover 103 decrease as they move from top to bottom in the vertical direction. Specifically, the expansion rate of base substrate 102 is smaller than that of circuit substrate 106, and the expansion rate of circuit substrate 106 is smaller than that of cover 103.

[0092] In one example, the base substrate 102 can be made of materials such as single crystal silicon, carbon fiber reinforced plastic (CFRP), silicon carbide (SiC), and alumina. The circuit substrate 106 can be made of materials such as glass epoxy resin, polyimide (PI) resin, liquid crystal polymer (LCP), alumina, zirconia-toughened alumina ceramic (Japanese: アルミナジグコニア), aluminum nitride, silicon nitride, and low-temperature co-fired ceramic (LTCC). The glass epoxy resin can be FR-4 (Flame Retardant Type 4). The cover 103 can be made of a resin material such as polyetheretherketone (PEEK), polytetrafluoroethylene (PTFE), polyphenylene sulfide (PPS), or epoxy resin. Alternatively, the cover 103 can be made of a metal material such as stainless steel (SUS) or aluminum.

[0093] The circuit substrate 106 and the first sensor 104 are fixed to the upper surface 102a of the base substrate 102 via an elastic adhesive layer 112. Specifically, the elastic adhesive layer 112 is disposed between the base substrate 102, the circuit substrate 106, and the first sensor 104. The elastic adhesive layer 112 can be formed, for example, from an adhesive that develops rubber-like elasticity upon curing. In one example, the elastic adhesive layer 112 can be primarily composed of silicone.

[0094] The cover 103 can be fixed to the circuit substrate 106. In an exemplary embodiment, the cover 103 includes a first cover 103A and a second cover 103B. The first cover 103A and the second cover 103B are formed independently of each other and are fixed to the circuit substrate 106 using different fastening members 110. For example, if the fastening member 110 is a bolt, the fastening member 110 that fixes the cover 103 can also be fastened to the internal thread member 111 (fastening member) fixed to the circuit substrate 106.

[0095] In the illustrated example, the first cover 103A is fixed to the circuit board 106 by a plurality of fastening members 110. In addition, each of the plurality of second covers 103B is fixed to the circuit board 106 by one fastening member 110. Figure 10 In the example shown, the fastening member 110 securing each second cover 103B is positioned toward the edge of the second cover 103B. However, the fastening member 110 may also be located at the center of each second cover 103B. The center may be the center of gravity of the planar shape. Furthermore, the first cover 103A may be secured to the circuit substrate 106 using a single fastening member 110. Furthermore, multiple second covers 103B may each be secured to the circuit substrate 106 using multiple fastening members 110.

[0096] For example, the cover 103 may be fixed to the base substrate 102. That is, the base substrate 102 may have an internal thread member that passes through the circuit substrate 106 and protrudes upward from the circuit substrate 106, and the fastening member 110 may fasten the cover 103 to the internal thread member.

[0097] The height position of the lower surface of the second sensor 105 is offset from the height position of the lower surface 102b of the base substrate 102 toward the upper surface 102a of the base substrate 102. In other words, the lower surface of the second sensor 105 is recessed from the height position of the lower surface 102b of the base substrate 102 toward the upper surface 102a. For example, a notch-like portion for accommodating the second sensor 105 may be formed on the periphery of the lower surface 102b of the base substrate 102. In this case, the height of the notch-like portion is greater than the height of the second sensor 105.

[0098] Figure 11 This is a flowchart showing the process of measuring capacitance using the measuring device 100. The operations in this flowchart are controlled by the processor 174 of the measuring device 100 or the control unit MC of the processing system. When measuring capacitance, the measuring device 100 can be stored in any of the containers 4a to 4d.

[0099] First, the temperature environment in the chamber of the plasma processing device 10 is adjusted to be suitable for the measurement environment (step SP1). In one example, the environment in the chamber can be adjusted based on the process treatment process when the process treatment is performed. That is, the environment in the chamber can be arbitrarily set by the user according to the conditions of the assumed process treatment. For example, the temperature of the upper electrode 30 can be controlled to about 200°C. The temperature of the deposit shield 46 can be controlled to about 200°C. The temperature of the workbench ST can be controlled to about 80°C. The gas pressure in the chamber can be about 0.1mTorr to 500mTorr.

[0100] Next, the measuring instrument 100 is transported by the transport unit TU2 to a position on the loading area determined based on the transport position data (step SP2). In step SP2, the transport unit TU1 transports the measuring instrument 100 from any of the containers 4a to 4d to the load lock module LL1 or the load lock module LL2. Then, based on the transport position data, the transport unit TU2 transports the measuring instrument 100 from one of the load lock modules to any of the process modules PM1 to PM6, and places the measuring instrument 100 on the loading area of ​​the electrostatic holding disk ESC. The transport position data is coordinate data predetermined so that the position of the central axis AX100 of the measuring instrument 100 coincides with the center position of the edge ring ER. Alternatively, the transport position data may be coordinate data predetermined so that the position of the central axis AX100 of the measuring instrument 100 coincides with the center position of the electrostatic holding disk ESC.

[0101] Next, the measuring device 100 is attracted to the electrostatic holding disk ESC (step SP3 ). That is, the electrostatic holding disk ESC attracts the measuring device 100 (base substrate 102 ) by electrostatic force such as Coulomb force generated by the DC voltage from the DC power supply 22 .

[0102] Next, a heat transfer gas such as He gas is supplied from the gas supply line 28 provided in the plasma processing apparatus 10 to between the upper surface of the electrostatic holding disk ESC and the lower surface 102 b of the measuring device 100 (step SP4 ).

[0103] Next, measurement is performed by the measuring device 100 (step SP5). In step SP5, the output signals (voltage signals) of the C / V conversion circuit 172 and the output signals (voltage signals) of the C / V conversion circuit 272 are converted into digital values ​​by the A / D converter and output as detection values ​​to the processor 174. The detection values ​​can be converted by the processor 174 into measurement values ​​representing the electrostatic capacitance. The acquired electrostatic capacitance data can be stored in the storage device 175 in a state associated with temperature data, detection values, etc. for each sensor.

[0104] Furthermore, in one exemplary embodiment, the offset of the center of the measuring instrument 100 relative to the center position of the edge ring ER can be derived based on each capacitance acquired by the first sensors 104A-104C. Furthermore, the offset of the center of the measuring instrument 100 relative to the center position of the electrostatic holding disk ESC can be derived based on each capacitance acquired by the second sensors 105A-105C. Such offsets can be used, for example, to calibrate the transport position data used in transport by the transport unit TU2. In one example, after calibrating the transport position data based on the aforementioned operational flow, processing of the workpiece W can be performed based on the processing recipe.

[0105] As described above, in an exemplary embodiment, a measuring device 100 is provided. The measuring device 100 includes a base substrate 102 having a disk shape. The measuring device 100 includes a plurality of first sensors 104 arranged along the periphery of the base substrate 102. The plurality of first sensors 104 measure the electrostatic capacitance between the edge ring ER arranged on the side of the base substrate 102. The measuring device 100 includes a circuit substrate 106 fixed to the base substrate 102. The circuit substrate 106 includes a computing device that controls the plurality of first sensors 104. The measuring device 100 includes a cover 103 fixed to the circuit substrate 106 or the base substrate 102 so as to cover the top of the circuit substrate 106. The expansion coefficient of the base substrate 102 is smaller than the expansion coefficient of the circuit substrate 106. The expansion coefficient of the circuit substrate 106 is smaller than the expansion coefficient of the cover 103.

[0106] The measuring device 100 includes a first sensor 104 that measures capacitance corresponding to the distance from the edge ring ER, an object, and a second sensor 105 that measures capacitance corresponding to the distance and facing area from the electrostatic holding disk ESC, an object. The measuring device 100 can derive the transport position during transport based on the capacitance acquired by the first and second sensors 104 and 105. This allows for calibration of transport data for transport units TU1 and TU2. The components that comprise the chamber S heat up during plasma treatment (processing), sometimes deforming due to thermal expansion. Therefore, measurements performed by the measuring device 100 are required to be performed under the same temperature environment as that used during the plasma treatment of the workpiece W. However, when the measuring device 100 is exposed to the temperature environment of plasma treatment, thermal expansion may cause irregular deformation of the measuring device 100. In this case, variations in the distance between the capacitance sensor and the object may prevent the accurate acquisition of capacitance that accurately reflects the distance.

[0107] In the measuring device 100 described above, a circuit substrate 106 is fixed to a disk-shaped base substrate 102, and a cover 103 covering the circuit substrate 106 is fixed to the base substrate 102 or the circuit substrate 106. In the measuring device 100 described above, the base substrate 102, the circuit substrate 106, and the cover 103 are stacked in order from bottom to top. Furthermore, the base substrate 102 has the smallest expansion coefficient, while the expansion coefficients of the circuit substrate 106 and the cover 103 increase in order. With this structure, when exposed to a high-temperature environment similar to that in which the process is performed, the deformation (expansion) of the cover 103 is the largest, while the deformation of the circuit substrate 106 and the base substrate 102 decreases in order. Therefore, the deformation of the measuring device 100 caused by thermal expansion is controlled so that the peripheral edge warps downward, with the cover 103, which has a larger deformation, being pulled by the base substrate 102, which has a smaller deformation. In this manner, when the measuring device 100 is placed in a predetermined position, fluctuations in the height position of the peripheral edge of the measuring device 100 are suppressed. Specifically, when comparing a high-temperature environment with a normal-temperature environment, the distance from the edge ring ER disposed to the side of the measuring device 100 is less likely to change. The capacitance detected by the first sensor 104 depends on the distance between the first sensor 104 and the edge ring ER. Therefore, capacitance can be measured with high accuracy even in a high-temperature environment.

[0108] In one exemplary embodiment, base substrate 102 can be made of any of single-crystal silicon, carbon fiber reinforced plastic, silicon carbide, and aluminum oxide. Circuit substrate 106 can be made of any of glass epoxy resin and polyimide resin. Cover 103 can be made of any of polyetheretherketone resin, polytetrafluoroethylene resin, polyphenylene sulfide resin, and epoxy resin. This structure enables the manufacture of a measuring device 100 exhibiting the aforementioned expansion coefficient characteristics.

[0109] In one exemplary embodiment, the cover 103 can include a first cover 103A and a second cover 103B formed independently of each other. The first cover 103A and the second cover 103B can be secured to the circuit substrate 106 using different fastening members 110. This structure can reduce deformation of the cover 103 compared to a case where the cover 103 is integral. This reduces the impact of deformation of the cover 103 on the circuit substrate 106 and base substrate 102.

[0110] In an exemplary embodiment, the second cover 103B may be separated from the periphery of the first cover 103A and extend radially of the base substrate 102. In this structure, the deformation of the measuring device 100 is radial, thereby reducing strain in the circumferential direction, for example.

[0111] In one exemplary embodiment, the first cover 103A can be positioned at the center of the base substrate 102. Multiple second covers 103B can be radially arranged around the first cover 103A. This structure minimizes circumferential deformation variation. Specifically, the multiple second covers 103B extend from the first cover 103A toward the first sensor 104 or the second sensor 105. Consequently, circumferential deformation variation is minimized between the locations where the first and second sensors 104 and 105 are positioned.

[0112] In one exemplary embodiment, the circuit substrate 106 can be secured to the base substrate 102 via an elastic adhesive layer 112. In this structure, the elastic adhesive layer 112 can mitigate the effects of changes in the circuit substrate 106 on the base substrate 102. Specifically, the elastic adhesive layer 112 follows the deformation of the circuit substrate 106 and absorbs the external force applied by the circuit substrate 106 to the base substrate 102. This allows the base substrate 102 to be gently warped. Furthermore, the circuit substrate 106 is prevented from peeling off from the base substrate 102.

[0113] In one exemplary embodiment, the measuring device 100 can include a plurality of second sensors 105 disposed along the periphery of the base substrate 102. The plurality of second sensors 105 are used to measure the electrostatic capacitance between the plurality of second sensors 105 and the electrostatic holding disk ESC disposed below the base substrate 102. The lower surfaces of the plurality of second sensors 105 may be offset from the lower surface 102b of the base substrate 102 toward the upper surface 102a of the base substrate 102. For example, if the second sensors 105 are offset below the lower surface 102b of the base substrate 102, the base substrate 102 is supported by the second sensors 105. In this case, the base substrate 102 may be deformed toward the electrostatic holding disk ESC when the measuring device 100 is exposed to a high temperature environment on the electrostatic holding disk ESC. In this configuration, the base substrate 102 is not supported by the plurality of second sensors 105. Therefore, deformation of the base substrate 102 is suppressed.

[0114] In an exemplary embodiment, a measurement method is provided for obtaining a measurement value representing electrostatic capacitance by a measuring device 100 in a chamber S of a processing system for performing process treatment. The measurement method includes a step of controlling the temperature environment in the chamber S. The measurement method includes a step of transporting the measuring device 100 by transporting devices TU1 and TU2 to an electrostatic holding disk ESC in the chamber S whose temperature environment is controlled. The measurement method includes a step of causing the measuring device 100 transported to the electrostatic holding disk ESC to be adsorbed on the electrostatic holding disk ESC. The measurement method includes a step of obtaining a measurement value representing electrostatic capacitance between the measuring device 100 adsorbed on the electrostatic holding disk ESC and an edge ring ER surrounding the measuring device 100.

[0115] In this method, by attaching the measuring device 100 to the electrostatic holding disk ESC, the base substrate 102 is pressed against the mounting surface of the electrostatic holding disk ESC, thereby suppressing strain in the measuring device 100. Furthermore, in this method, by passing He gas between the electrostatic holding disk ESC and the measuring device 100, the temperature of the measuring device 100 can be controlled based on the temperature control of the electrostatic holding disk ESC. This temperature control can further suppress deformation of the measuring device 100.

[0116] As mentioned above, although exemplary embodiments have been described, the present invention is not limited to the exemplary embodiments described above, and various omissions, replacements, and changes may be made.

[0117] The measuring device 100 is shown as including three first sensors 104 and three second sensors 105. However, the number of capacitance sensors mounted on the measuring device 100 can be increased or decreased. Alternatively, only one of the first sensor 104 and the second sensor 105 may be mounted.

[0118] Although the example in which the first cover 103A and the second cover 103B are separated from each other when viewed from the top and bottom is shown, the first cover 103A and the second cover 103B may have a region that partially overlaps each other when viewed from the top and bottom. In this case, the region between the first cover 103A and the second cover 103B can be covered by the overlapping portion of the first cover 103A and the second cover 103B.

[0119] While the illustrated example shows the first cover 103A being secured by multiple fastening members 110, the first cover 103A can also be secured to the circuit board or base substrate using a single fastening member. In this case, the fastening member can be fastened to the center of the first cover 103A. Furthermore, when multiple fastening members are used to secure a single cover, as in the illustrated example, the distance between the fastening members can be less than half the length of the longest side of the cover.

[0120] It will be understood from the above description that the various embodiments of the present disclosure are described in this specification for illustrative purposes only and that various modifications may be made without departing from the scope and spirit of the present disclosure. Therefore, it is not intended to limit the various embodiments disclosed in this specification, and the true scope and spirit are set forth by the appended claims.

[0121] Here, various exemplary embodiments included in the present disclosure are described in the following [E1] to [E6].

[0122] [E1]

[0123] A measuring device comprising:

[0124] a base substrate having a circular plate shape;

[0125] a plurality of first sensors disposed along a periphery of the base substrate and configured to measure electrostatic capacitance between the first sensors and a first object disposed on a side of the base substrate;

[0126] a circuit substrate fixed on the base substrate, comprising a computing device for controlling the plurality of first sensors; and

[0127] a cover fixed to the circuit substrate or the base substrate so as to cover the upper side of the circuit substrate;

[0128] wherein the expansion coefficient of the base substrate is smaller than the expansion coefficient of the circuit substrate;

[0129] The expansion coefficient of the circuit substrate is smaller than the expansion coefficient of the cover.

[0130] [E2]

[0131] The measuring device according to E1, wherein

[0132] The base substrate is made of any one of single crystal silicon, carbon fiber reinforced plastic, silicon carbide and aluminum oxide.

[0133] The circuit substrate is made of any one of glass epoxy resin and polyimide resin.

[0134] The cover is made of any one of polyetheretherketone resin, polytetrafluoroethylene resin, polyphenylene sulfide resin and epoxy resin.

[0135] [E3]

[0136] The measuring device according to E1 or E2, wherein

[0137] The cover includes a first cover and a second cover formed independently of each other,

[0138] The first cover and the second cover are fixed to the circuit substrate or the base substrate by different fastening members.

[0139] [E4]

[0140] The measuring device according to E3, wherein

[0141] The second cover is separated from a periphery of the first cover and extends along a radial direction of the base substrate.

[0142] [E5]

[0143] The measuring device according to E3 or E4, wherein

[0144] The second cover is provided with a plurality of

[0145] The first cover is arranged at the center of the base substrate.

[0146] The plurality of second covers are radially arranged around the first cover.

[0147] [E6]

[0148] The measuring device according to any one of E1 to E5, wherein

[0149] The circuit substrate is fixed to the base substrate by an elastic adhesive.

[0150] [E7]

[0151] The measuring device according to any one of E1 to E6, wherein

[0152] A plurality of second sensors are further provided, the plurality of second sensors being provided along the periphery of the base substrate and configured to measure electrostatic capacitance between the second sensor and a second object disposed below the base substrate.

[0153] The height positions of the lower surfaces of the plurality of second sensors are offset from the height position of the lower surface of the base substrate toward the upper surface of the base substrate.

[0154] [E8]

[0155] A measurement method is a method for obtaining a measurement value representing electrostatic capacitance by a measuring device in a chamber of a processing system for performing a process, wherein:

[0156] The processing system comprises:

[0157] a process module having a chamber body providing the chamber; and

[0158] a transport device for transporting the measuring device into the chamber,

[0159] Wherein, the process module at least includes:

[0160] an electrostatic holding plate disposed in the chamber and configured to hold the measuring device; and

[0161] an edge ring configured to surround a periphery of the electrostatic holding disk,

[0162] The measuring instrument has:

[0163] a base substrate having a circular plate shape;

[0164] a plurality of sensors disposed along a periphery of the base substrate for measuring electrostatic capacitance;

[0165] a circuit substrate fixed to the base substrate and including a computing device for controlling the plurality of sensors; and

[0166] a cover fixed to the circuit substrate or the base substrate so as to cover the upper side of the circuit substrate;

[0167] wherein the expansion coefficient of the base substrate is smaller than the expansion coefficient of the circuit substrate;

[0168] The expansion rate of the circuit substrate is smaller than the expansion rate of the cover,

[0169] The method comprises the following steps:

[0170] controlling the temperature environment within the chamber;

[0171] The measuring device is transported by the transport device to the electrostatic holding disk in the chamber where the temperature environment is controlled;

[0172] causing the measuring device conveyed onto the electrostatic holding disk to be attracted to the electrostatic holding disk; and

[0173] The measuring device attracted to the electrostatic holding disk acquires a measurement value indicating the electrostatic capacitance between the measuring device and the edge ring surrounding the measuring device.

[0174] Description of Reference Numerals

[0175] 100 : measuring device; 102 : base substrate; 103 : cover; 104 : first sensor; 105 : second sensor; 106 : circuit board; ER: edge ring (first object).

Claims

1. A measuring device comprising: a base substrate having a circular plate shape; a plurality of first sensors disposed along a periphery of the base substrate and configured to measure electrostatic capacitance between the first sensors and a first object disposed on a side of the base substrate; a circuit substrate fixed on the base substrate, comprising a computing device for controlling the plurality of first sensors; as well as a cover fixed to the circuit substrate or the base substrate so as to cover the upper side of the circuit substrate; wherein the expansion coefficient of the base substrate is smaller than the expansion coefficient of the circuit substrate; The expansion coefficient of the circuit substrate is smaller than the expansion coefficient of the cover.

2. The measuring device according to claim 1, wherein The base substrate is made of any one of single crystal silicon, carbon fiber reinforced plastic, silicon carbide and aluminum oxide. The circuit substrate is made of any one of glass epoxy resin and polyimide resin. The cover is made of any one of polyetheretherketone resin, polytetrafluoroethylene resin, polyphenylene sulfide resin and epoxy resin.

3. The measuring device according to claim 1, wherein The cover includes a first cover and a second cover formed independently of each other, The first cover and the second cover are fixed to the circuit substrate or the base substrate by different fastening members.

4. The measuring device according to claim 3, wherein The second cover is separated from a periphery of the first cover and extends along a radial direction of the base substrate.

5. The measuring device according to claim 4, wherein The second cover is provided with a plurality of The first cover is arranged at the center of the base substrate. The plurality of second covers are radially arranged around the first cover.

6. The measuring device according to claim 1, wherein The circuit substrate is fixed to the base substrate by an elastic adhesive.

7. The measuring device according to claim 1, wherein A plurality of second sensors are further provided, the plurality of second sensors being provided along the periphery of the base substrate and configured to measure electrostatic capacitance between the second sensor and a second object disposed below the base substrate. The height positions of the lower surfaces of the plurality of second sensors are offset from the height position of the lower surface of the base substrate toward the upper surface of the base substrate.

8. A measurement method for obtaining a measurement value representing electrostatic capacitance by a measuring device in a chamber of a processing system for performing a process, wherein: The processing system comprises: a process module having a chamber body providing the chamber; as well as a transport device for transporting the measuring device into the chamber, Wherein, the process module at least includes: an electrostatic holding plate disposed in the chamber and configured to hold the measuring device; and an edge ring configured to surround a periphery of the electrostatic holding disk, The measuring instrument has: a base substrate having a circular plate shape; a plurality of sensors disposed along a periphery of the base substrate for measuring electrostatic capacitance; a circuit substrate fixed to the base substrate and including a computing device for controlling the plurality of sensors; and a cover fixed to the circuit substrate or the base substrate so as to cover the upper side of the circuit substrate; wherein the expansion coefficient of the base substrate is smaller than the expansion coefficient of the circuit substrate; The expansion rate of the circuit substrate is smaller than the expansion rate of the cover, The method comprises the following steps: controlling the temperature environment within the chamber; The measuring device is transported by the transport device to the electrostatic holding disk in the chamber where the temperature environment is controlled; causing the measuring device conveyed onto the electrostatic holding disk to be attracted to the electrostatic holding disk; and The measuring device attracted to the electrostatic holding disk acquires a measurement value indicating the electrostatic capacitance between the measuring device and the edge ring surrounding the measuring device.

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