Method for manufacturing laminate for transfer, laminate for transfer, and method for manufacturing semiconductor device

Abstract

Provided is a transfer laminate which is effective for laser transfer without an etching step. A laminate for transfer is produced by: (1) preparing a first laminate obtained by laminating a resin composition containing a curable resin in a film-like and uncured state on a first substrate having light transmissivity, and a second laminate obtained by laminating a resin composition containing a curable resin in a film-like and uncured state on a second substrate having light transmissivity; a second laminate in which a plurality of semiconductor elements having protruding electrode portions are disposed on a second substrate having ultraviolet light permeability such that the protruding electrode portions protrude toward the opposite side from the surface side of the second substrate; (2) a third laminate is obtained by bonding the first laminate and the second laminate such that the surface on the film-like side of a resin composition containing a curable resin faces the surface on the side on which the semiconductor element is disposed; (3) curing a resin composition containing a curable resin contained in the third laminate to form a cured resin film; and (4) irradiating an ultraviolet laser from the second substrate side of the third laminate, separating the second substrate from the third laminate at the interface between the second substrate and the semiconductor element, and removing at least a portion of the cured resin film present between the semiconductor elements.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a transfer laminate, a transfer laminate, and a method for manufacturing a semiconductor device. More specifically, the present invention relates to a method for manufacturing a transfer laminate preferably used when mounting semiconductor elements using laser transfer technology, a transfer laminate, and a method for manufacturing a semiconductor device using the transfer laminate. Background Art

[0002] Generally speaking, semiconductor elements incorporated into semiconductor devices are transferred and mounted on a circuit substrate or the like by a pick-and-place method using a flip chip bonder or the like. In recent years, the performance and miniaturization of semiconductor devices have continued to develop, and with this, the elements incorporated into semiconductor devices have also become smaller and thinner, and the number of elements installed has also gradually increased. In recent years, displays that arrange light emitting diodes (LEDs), which are a type of semiconductor element, and especially small LEDs, namely micro-LEDs, with a side of several hundred to a dozen microns, in each pixel have attracted attention due to their high brightness, low power consumption, and high image quality. When manufacturing the micro-LED display, the above-mentioned mounting method is too time-consuming, so new methods are being studied.

[0003] As a method for mounting a large number of small semiconductor components, the following laser transfer technology has been proposed: After preparing a transfer stack by mounting semiconductor components on the surface of the adhesive layer opposite the support substrate, the stack is irradiated with a laser from the support substrate side of the transfer stack, thereby reducing the adhesion of the semiconductor components. The target semiconductor components are then transferred and mounted on another substrate, such as a circuit board. This method has the advantage of being able to transfer semiconductor components with high positional accuracy and at high speed. Furthermore, "transfer" refers to the process of moving the semiconductor components from the original substrate to another substrate.

[0004] As the transfer laminate used in the laser transfer technique, there is used a laminate in which the adhesive layer is ablated by laser irradiation, thereby removing the adhesive layer from the transfer laminate and enabling transfer of a target semiconductor element (for example, Patent Documents 1 to 3).

[0005] Patent Document 1 discloses a transfer laminate in which a support substrate and a semiconductor element are bonded together using an adhesive layer containing 10% by mass or more of a laser-absorbing component that absorbs the laser light at its wavelength. This method discloses a method for transferring the semiconductor element by irradiating the transfer laminate with laser light from the support substrate side. In this method, the use of an adhesive layer containing a laser-absorbing component allows for efficient ablation of the adhesive layer, enabling transfer of the semiconductor element. "Ablation" refers to the phenomenon of material decomposition, vaporization, and evaporation.

[0006] Patent Document 2 discloses a method for manufacturing a display using a transfer laminate in which a support substrate and a semiconductor element are bonded together using an adhesive layer having a thickness of 0.1 μm to 0.5 μm. This method discloses transferring the semiconductor element by irradiating the transfer laminate with laser light from the support substrate side. In this method, since a thin film adhesive layer is used, the adhesive layer can be completely ablated, thereby preventing residual adhesive film from remaining on the surface of the element after transfer.

[0007] Patent Document 3 discloses a transfer laminate characterized in that, with respect to a support substrate and a semiconductor element, the width of the adhesive layer on the surface in contact with the support substrate is narrower than the width of the semiconductor element on the surface in contact with the adhesive layer. By setting the width of the adhesive layer in this manner, the distance between the lower surface of the adhesive layer, to which the target element is affixed, and the lower surface of the adhesive layer, to which an adjacent light-emitting element is affixed, is increased, thereby preventing adjacent elements from being erroneously transferred due to positional deviation of the laser spot during laser transfer.

[0008] Prior art literature

[0009] Patent Literature

[0010] Patent Document 1: International Publication No. 2022 / 201767

[0011] Patent Document 2: Japanese Patent Application Laid-Open No. 2020-188037

[0012] Patent Document 3: Japanese Patent No. 6119335 Summary of the Invention

[0013] Problems to be solved by the invention

[0014] In Patent Document 1, in a transfer stack, the adhesive layer between adjacent semiconductor elements is not removed. Therefore, if the laser spot is offset and the laser is irradiated around the adhesive layer to which an element adjacent to the element to be transferred, but not the element to be transferred, is fixed, the adhesive layer around the adjacent element is ablated, potentially leading to erroneous transfer of the adjacent element. In Patent Documents 2 and 3, the adhesive layer between adjacent semiconductor elements is removed. However, the adhesive layer removal method requires an etching process such as dry etching or wet etching after mounting the semiconductor element on the surface of the adhesive layer opposite the support substrate in a stack having an adhesive layer on a support substrate, which takes time to produce the transfer stack.

[0015] Technical means to solve the problem

[0016] The above-mentioned subject is achieved by the following means.

[0017] [1] A method for producing a transfer laminate, comprising:

[0018] (1) preparing a first laminate and a second laminate, wherein the first laminate is formed by laminating a resin composition containing a curable resin in a film-like, uncured state on a first light-transmitting substrate,

[0019] The second stacked body is formed by arranging a plurality of semiconductor elements having at least one protruding electrode portion on a second substrate having ultraviolet light transparency so that the protruding electrode portion protrudes toward a side opposite to a surface of the second substrate;

[0020] (2) a step of laminating the first laminate and the second laminate so that the surface on which the resin composition containing the curable resin is formed into a film faces the surface on which the semiconductor element is disposed, thereby obtaining a third laminate;

[0021] (3) a step of curing the resin composition containing the curable resin contained in the third laminate to form a cured resin film; and

[0022] (4) A process of irradiating the second substrate of the third stack with ultraviolet laser light from the side thereof to separate the second substrate from the third stack at the interface between the second substrate and the semiconductor element, and removing at least a portion of the cured resin film between the semiconductor elements.

[0023] [2] A method for manufacturing a transfer laminate according to [1], wherein in step (4), the cured resin film between adjacent semiconductor elements is removed by ultraviolet laser, thereby dividing the assembly into units (areas) of individual semiconductor elements and the cured resin film.

[0024] [3] A method for manufacturing a transfer laminate according to [1] or [2], wherein the indentation elastic modulus of the first laminate at a depth of 20 nm to 40 nm from the resin film surface at 25°C from the resin film side when the curable resin is cured is greater than 1.0 GPa and less than 7.0 GPa.

[0025] [4] A method for manufacturing a transfer laminate according to any one of [1] to [3], wherein step (2) is performed so that after step (3), the cured resin composition is in contact with the entire surface of the protruding electrode portion.

[0026] [5] The method for producing a transfer laminate according to any one of [1] to [4], wherein the absorbance of the cured resin film at any wavelength of 200 nm to 380 nm when converted to a film thickness of 1.0 μm is 0.4 or more and 5.0 or less.

[0027] [6] The method for producing a transfer laminate according to any one of [1] to [5], wherein the thickness of the resin composition containing the curable resin in the first laminate is 0.3 μm or more and 3.0 μm or less.

[0028] [7] The method for manufacturing a transfer laminate according to any one of [1] to [6] is characterized in that in the step (3), the resin composition in the third laminate is cured while applying pressure from the side of the first substrate or from the side of the second substrate.

[0029] [8] The method for producing a transfer laminate according to any one of [1] to [7], wherein in the step (4), the absorbance of the cured resin film at the wavelength of the ultraviolet laser when converted to a film thickness of 1.0 μm is set to X, and the energy density of the ultraviolet laser is set to Y mJ / cm 2 When , the product of X and Y is 400 or more and 7,000 or less.

[0030] [9] A transfer laminate for transferring a semiconductor element to another substrate, wherein:

[0031] On the stacked substrate (A) having light transmittance (first substrate),

[0032] (B) Cured film after curing of the resin composition containing the curable resin

[0033] On the substrate with the cured film,

[0034] (C) Multiple semiconductor elements having protruding electrode portions

[0035] The protruding electrode portion is bonded to the cured film in a state where the depth of the protruding electrode portion embedded in the cured film matches the height of the protruding electrode portion.

[0036] Furthermore, the plurality of semiconductor elements are not connected to adjacent semiconductor elements via a cured film, and the shortest distance between the protruding electrode portion and the first substrate is 0.1 μm to 1.0 μm.

[0037]

[10] The transfer laminate according to [9], wherein the bonding strength between the semiconductor element and the cured film after curing of the resin composition (B) containing a curable resin is 5 mN or more and 30 mN or less.

[0038]

[11] The transfer laminate according to [9] or

[10] , wherein the cured film of the resin composition (B) containing a curable resin after curing has an indentation elastic modulus of 1.0 GPa or more and 7.0 GPa or less at a depth of 20 nm to 40 nm from the surface of the resin film at 25°C.

[0039]

[12] The transfer laminate according to any one of [9] to

[11] , wherein the cured film after curing the resin composition containing the curable resin (B) comprises polyimidesiloxane.

[0040]

[13] A method for manufacturing a semiconductor device, comprising: using a transfer stack manufactured by the method for manufacturing a transfer stack according to any one of [1] to [8] to manufacture a semiconductor device, the method comprising: a step of making the surface of the transfer stack on which the semiconductor element is provided face a third substrate for mounting the semiconductor element; and then irradiating the transfer stack with a laser from the side of the first substrate to remove a cured film after curing of the resin composition containing the curable resin, and transferring the semiconductor element to the third substrate.

[0041]

[14] A method for manufacturing a semiconductor device, comprising: using a transfer laminate according to any one of [9] to

[12] to manufacture a semiconductor device, the method comprising: a step of making the surface of the transfer laminate on which the semiconductor element is provided face a third substrate for mounting the semiconductor element; and a step of irradiating the transfer laminate from the first substrate side with a laser to remove a cured film after curing of the resin composition containing the curable resin, and transferring the semiconductor element to the third substrate.

[0042] Effects of the Invention

[0043] The manufacturing method of the transfer stack of the present invention can obtain the following stack: there is no need to use etching processes such as dry etching or wet etching. Even if the laser point is shifted during laser transfer, only the target semiconductor element can be transferred with high precision without affecting adjacent elements, which is beneficial to laser transfer. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] [ Figure 1 ] is a diagram showing a method for confirming the degree of contact between the protruding electrode portion in the third laminate and the film after curing of the resin composition containing the curable resin.

[0045] [ Figure 2 ] is a cross-sectional view showing a state in which the resin film between adjacent semiconductor elements in a transfer stack whose surface is protected by a platinum film is removed.

[0046] [ Figure 3 ] is a diagram showing an example of a laser transfer method using a transfer laminate. DETAILED DESCRIPTION

[0047] The method for producing a transfer laminate of the present invention is as follows:

[0048] It has:

[0049] (1) preparing a first laminate and a second laminate, wherein the first laminate is formed by laminating a resin composition containing a curable resin in a film-like, uncured state on a first light-transmitting substrate,

[0050] The second stacked body is formed by arranging a plurality of semiconductor elements having at least one protruding electrode portion on a second substrate having ultraviolet light transparency so that the protruding electrode portion protrudes toward a side opposite to a surface of the second substrate;

[0051] (2) a step of laminating the first laminate and the second laminate so that the surface on which the resin composition containing the curable resin is formed into a film faces the surface on which the semiconductor element is disposed, thereby obtaining a third laminate;

[0052] (3) a step of curing the resin composition containing the curable resin contained in the third laminate to form a cured resin film; and

[0053] (4) A process of irradiating the second substrate of the third stack with ultraviolet laser light from the side thereof to separate the second substrate from the third stack at the interface between the second substrate and the semiconductor element, and removing at least a portion of the cured resin film between the semiconductor elements.

[0054] Hereinafter, each step of the method for producing the transfer laminate of the present invention will be described.

[0055] <Process (1)>

[0056] In step (1), a first stack and a second stack are prepared, wherein the first stack is formed by laminating a resin composition containing a curable resin in a film-like and uncured state on a first light-transmitting substrate, and the second stack is formed by arranging a plurality of semiconductor elements having at least one protruding electrode portion on a second substrate having ultraviolet light transparency so that the protruding electrode portion protrudes toward a side opposite to the surface of the second substrate.

[0057] The first laminate can be produced by forming a resin composition containing a curable resin in a film-like, uncured state on a first substrate having light transparency.

[0058] The so-called light-transmitting substrate refers to a substrate having an absorbance of 0.1 or less at any wavelength of at least 200nm to 1100nm. Examples of substrates having such absorbance include inorganic substrates such as quartz, sapphire, alkali glass, alkali-free glass, and borosilicate glass. The thickness of the substrate can be selected within a range that does not impair the absorbance, and is preferably 0.1mm to 5.0mm. From the perspective of substrate processing, the thickness of the substrate is preferably 0.3mm or more, and from the perspective of obtaining versatility, the thickness of the substrate is more preferably 2.0mm or less. In addition, the first substrate is preferably a substrate that transmits the laser light used when irradiating the laser from the side of the first substrate described later.

[0059] As long as the first substrate has the aforementioned absorbance, organic substrates such as polyethylene terephthalate (PET), polyaramide, polyester, polypropylene, and cycloolefin can also be used. When using an organic substrate, the thickness of the substrate can be selected within a range that does not impair the aforementioned absorbance, preferably ranging from 0.05 mm to 3.0 mm. From the perspective of substrate handling, the substrate thickness is preferably 0.1 mm or greater, and from the perspective of suppressing light scattering during laser irradiation, the substrate thickness is more preferably 1.0 mm or less.

[0060] Next, the resin composition containing a curable resin used in the first laminate is described. In addition, the term "resin composition" mentioned here includes the case where only a curable resin is used as a component. The curable resin used in the resin composition refers to a resin that can be changed from an uncured state to a cured state by cross-linking the structure contained in the resin by providing external stimulation such as heating or irradiation of active energy lines. The uncured state of the resin composition containing a curable resin refers to a state in which the curing of the resin composition is not completed, and refers to a state in which the curing of the resin composition is further carried out to the extent described below by at least heating or irradiation of active energy lines. Whether the resin composition is in an uncured state can be confirmed by, for example, immersing the first laminate formed by forming the resin composition in a film form on the first substrate in a solvent, removing the resin composition from the first laminate, and whether the film thickness becomes less than 80% of the film thickness before immersion. In the cured state of the resin composition, even if immersed in a solvent, the film thickness of the resin film in the first laminate will not be reduced to less than 80% of the film thickness before immersion. Alternatively, as a method for immersing the first laminate in a solvent, the first laminate is placed in a beaker large enough to accommodate the first laminate, and an amount of solvent sufficient to immerse the entire surface of the first laminate (a solvent that reduces the film thickness by 1 μm or more in at least a portion of the film-formed region when the resin composition containing the curable resin is completely uncured and immersed at 80°C for 5 minutes) is added. The mixture is heated to 80°C and allowed to stand for 5 minutes. The first laminate is then placed in a separate beaker containing the same solvent as used for immersion and rinsed at room temperature for one minute. The first laminate is then placed in a beaker containing isopropyl alcohol and rinsed at room temperature for one minute. The first laminate is then placed in a beaker containing pure water and rinsed at room temperature for one minute. Finally, the first laminate is placed on a hot plate at 120°C and dried for 5 minutes. The film thickness of the surface of the first laminate coated with the resin composition is measured using a contact-type step difference meter to determine whether the film thickness is less than 80% of the film thickness before immersion. Examples of solvents for dissolving the uncured resin film include aprotic polar solvents such as γ-butyrolactone and N-methyl-2-pyrrolidone, but it is also preferred to use the same solvent as that contained in the resin composition.

[0061] Since the resin composition of the first stack is in an uncured state, the uncured resin composition easily covers the entire surface of the protruding electrode portion of the semiconductor element of the second stack in the later-described step (2). In this state, the bonding strength between the cured resin film obtained by curing the uncured resin composition in the later-described step (3) and the semiconductor element can be improved. This prevents the semiconductor element from being peeled off from the cured resin film due to the internal pressure of the decomposition gas generated when at least a portion of the cured resin film between adjacent semiconductor elements is removed by irradiation with ultraviolet laser light in the later-described step (4), thereby improving the yield of semiconductor elements in subsequent steps.

[0062] As a method for forming the resin composition into a film on the first substrate, an example of a method is to coat the resin composition on the first substrate. Any coating method may be selected, including spin coating using a spinner, spray coating, roll coating, and slot die coating. The coated resin composition is preferably dried for one to several dozen minutes at a temperature between 50°C and less than 150°C using a hot plate, a drying oven, or the like.

[0063] The resin composition applied to the first substrate preferably has an absorbance of 0.4 or more and 5.0 or less when converted to a film thickness of 1.0 μm at any wavelength between 200 nm and 380 nm, preferably at the wavelength of the ultraviolet laser described later, in the state of the cured resin film. By satisfying the absorbance of the cured resin film, in the step (4) described later, when the third stack is irradiated with the ultraviolet laser, the cured resin film efficiently absorbs the laser energy, and at least a portion of the cured resin film located between adjacent semiconductor elements is ablated and efficiently removed. In addition, if the absorbance is satisfied in the state of the cured resin film, the absorbance does not need to be satisfied in the state of the uncured resin composition formed into a film.

[0064] The curable resin contained in the resin composition applied to the first substrate is not limited in type as long as the structure contained in the resin is cross-linked by providing external stimulation such as heating or irradiation with active energy rays, and can be changed from an uncured state to a cured state. Examples thereof include polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, urethane resin, novolac resin, polyhydroxystyrene, polyester resin, acrylic resin, polyaramid resin, polysiloxane, and polyimidesiloxane.

[0065] The curable resin contained in the resin composition imparted to the first substrate preferably has a conjugated structure in the structure. By having a conjugated structure in the structure, the absorbance when converted to a film thickness of 1.0 μm at any wavelength in the range of 200 nm to 380 nm in the state of the cured resin film can be adjusted to a range of 0.4 or more and 5.0 or less. As the structure having a conjugated structure, an aromatic structure can be listed, wherein preferably a structure having biphenyl, imide, benzoxazole, benzophenone, etc. The absorbance can be achieved by setting all monomer residues constituting the resin to 100 mol % and setting more than 60 mol % of the monomer residues to monomer residues having a conjugated structure. These resins may be contained alone in the resin film or may contain multiple types.

[0066] The resin composition imparted to the first substrate may contain additives such as ultraviolet absorbers or pigments, dyes, and pigments. The absorbance can also be achieved by containing additives such as ultraviolet absorbers or pigments, dyes, and pigments. Examples of usable additives include: Tinuvin PS, Tinuvin 99-2, Tinuvin 326, Tinuvin 328, Tinuvin 384-2, Tinuvin 400, Tinuvin 405, Tinuvin 460, Tinuvin 477, Tinuvin 479, Tinuvin 900, Tinuvin 9 ... UV absorbers such as DAINSORB T-0, DAINSORB T-7, DAINSORB T-31, DAINSORB T-52, DAINSORB T-53, DAINSORB T-84, DAINSORB P-6, and DAINSORB P-7 (all trade names, manufactured by Yamato Chemical Industry Co., Ltd.), and Solvent Yellow. The resin composition may contain pigments, dyes, and pigments such as Solvent Yellow 93, Solvent Yellow 33, Solvent Orange 60, Solvent Red 111, Solvent Red 135, Solvent Red 168, Solvent Red 207, Solvent Red 52, Solvent Red 179, Solvent Blue 36, Solvent Blue 94, Solvent Blue 63, Solvent Blue 104, Solvent Blue 97, Solvent Green 20, Solvent Violet 13, and Solvent Violet 36 (all trade names, manufactured by Tokyo Chemical Industry Co., Ltd.), carbon black, perylene black, cyanine black, and aniline black. These pigments may be contained alone or in combination.

[0067] Among them, it is preferred to contain one or more compounds selected from the group consisting of benzotriazole compounds, triazine compounds, benzophenone compounds, and benzoate compounds. These compounds have high heat resistance and are therefore less likely to decompose due to heat generated by curing the uncured resin composition by heating or by heat generated by crosslinking reaction by irradiation with active energy rays. Furthermore, since they absorb wavelengths in the range of 200 nm to 380 nm, they can efficiently remove the resin film between semiconductor elements by ultraviolet laser irradiation in step (4) described later.

[0068] The resin composition applied to the first substrate preferably has an indentation modulus of 1.0 GPa or more and 7.0 GPa or less at a depth of 20 nm to 40 nm from the surface of the resin film at 25°C when the curable resin is cured. The indentation modulus is a physical property that serves as an indicator for retaining the semiconductor element on the resin film. In addition, the means for confirming whether the resin is cured is as described above, but when a thermosetting resin is used as the curable resin, curing can be completed by heat treatment at 250°C for 30 minutes. By having an indentation modulus of 1.0 GPa or more, the following situation can be prevented: during the laser irradiation in the step (4) described later, the pressure of the gas generated when the cured resin film between the semiconductor elements is removed by ablation, causing the semiconductor element to be shifted on the resin film. If the semiconductor element is shifted on the resin film, the distance to the adjacent semiconductor element becomes shorter, and during laser transfer, not only the semiconductor element to be transferred but also the adjacent semiconductor element are irradiated with the laser, which may cause unintended transfer. When the indentation elastic modulus is 7.0 GPa or less, peeling of the third laminate after curing in the step (3) described later at the interface between the semiconductor element and the cured resin film can be more effectively prevented.

[0069] The indentation modulus can be measured by using a nano indenter. The indentation modulus is measured by an indentation load / unloading test. In the test, the first laminate in step (1) is heat-cured at 250°C, and a Berkovich indenter (a triangular pyramid diamond indenter) is used to vertically press the resin film from the surface toward the first substrate at 25°C ± 2°C in the atmosphere, and then the load is unloaded. At this time, the continuous rigidity measurement method is used and the measurement is performed at a measurement frequency of 100 Hz. The indentation modulus can be calculated based on the load-indentation depth graph obtained, using the value of a depth of 20 nm to 40 nm from the resin film surface.

[0070] In order to set the elastic modulus of the cured resin film (cured film) to the range, it is preferred to contain a soft component or a component after bending in the resin film. By introducing a soft component or a bending component, the elastic modulus can be adjusted to a preferred range. As components that improve flexibility or flexibility, there can be listed: soft structures of aliphatic or silane sources such as alkylene, siloxane, soft structures of ether sources such as alkanediol or diphenyl ether, alicyclic structures, bending structures of olefins, etc. When all monomer residues constituting the resin contained in the resin film are set to 100 mol%, by containing more than 20 mol% of monomer residues having these structures that impart flexibility, the elastic modulus can be set to less than 7.0 GPa. In addition, by being set to less than 70 mol%, the elastic modulus can be set to more than 1.0 GPa.

[0071] The resin composition imparted to the first substrate preferably contains a crosslinking agent. By adding a crosslinking agent, the structural parts contained in the resin composition can be crosslinked, so that the uncured resin composition is in a cured state. As the type of crosslinking agent, there is no limitation on the type as long as it is a compound that causes a crosslinking reaction by heating at 100°C or above and 300°C or below, or a compound that causes a crosslinking reaction by irradiating active energy lines, and examples include compounds having functional groups such as epoxy groups, oxetane groups, alkoxymethyl groups or hydroxymethyl groups. Preferably, it is a compound having two or more of the functional groups per molecule, more preferably having three or more, and further preferably having five or more. By having two or more functional groups per molecule, a crosslinking reaction during heating can be efficiently generated.

[0072] Examples of crosslinking agents include compounds having an alkoxymethyl group or a hydroxymethyl group, such as DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DML-BisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML- BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (these are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), "NIKALAC (registered trademark)" MX-290, NIKALAC MX-280, NIKALAC MX-270, NIKALAC MX-279, NIKALAC MW-100LM, NIKALAC MX-750LM (these are trade names, manufactured by Sanwa Chemical Co., Ltd.).

[0073] In addition, it is also preferred to use a cross-linking agent having an epoxy group. As a compound having an epoxy group, for example, there can be listed: bisphenol A type epoxy resin, bisphenol F type epoxy resin, propylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, polymethyl (glycidyloxypropyl) siloxane and other epoxy-containing silicones, dimer acid modified epoxy resins, etc., but the present invention is not limited to these. Specifically, there can be listed: Epiclon 850-S, Epiclon HP-4032, Epiclon HP-7200, Epiclon HP-820, Epiclon HP-4700, Epiclon EXA-4710, Epiclon HP-4770, Epiclon EXA-859C RP, Epiclon EXA-1514, Epiclon EXA-4880, Epiclon EXA-4850-150, Epiclon EXA-4850-1000, Epiclon EXA-4816, Epiclon EXA-4822 (these are trade names, manufactured by DIC Corporation), Rika resin) BEO-60E (the above are trade names, manufactured by Shin Nippon Chemical Co., Ltd.), EP-4003S, EP-4000S (the above are trade names, manufactured by ADEKA Co., Ltd.), JER871, JER872, YX-4000, YX-4000H (the above are trade names, manufactured by Mitsubishi Chemical Co., Ltd.), Celloxide 2021P (the above are trade names, manufactured by Daicel Co., Ltd.), Shofree PETG, Shofree CDMGB, Shofree BATG (the above are trade names, manufactured by Resonac Co., Ltd.), Denacol EX-201-IM (the above are trade names, manufactured by Nagase ChemteX Co., Ltd.), TEPIC-VL (the above are trade names, manufactured by Nissan Chemical Co., Ltd.), etc.

[0074] In addition, it is also preferred to use a cross-linking agent having an oxetane group. Specific examples include OXT-121, OXT-221, OX-SQ-H, OXT-191, PNOX-1009, RSOX (these are trade names, manufactured by Toagosei Co., Ltd.), "Eternacoll (registered trademark)" OXBP, "Eternacoll" OXTP (these are trade names, manufactured by UBE Co., Ltd.), etc.

[0075] The crosslinking agent may contain two or more kinds of crosslinking agents in the resin composition containing the curable resin, and preferably contains 0.1 parts by weight or more per 100 parts by weight of the total solid content of the resin composition, thereby imparting sufficient curability. In addition, the crosslinking agent preferably contains 30 parts by weight or less per 100 parts by weight of the total solid content of the resin composition. If it is within this range, the cured resin film has an elastic modulus within a preferred range.

[0076] The resin composition imparted to the first substrate may also contain a photopolymerization initiator. By containing a photopolymerization initiator, the curing of the resin composition by irradiation with active energy lines can be efficiently implemented. As photopolymerization initiators, there can be listed: diethoxyacetophenone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, benzyl dimethyl ketal, 1-(4-isopropylphenyl)-2-hydroxy-2-methylpropane-1-one, 4-(2-hydroxyethoxy)phenyl-(2-hydroxy-2-propyl)ketone, 1-hydroxycyclohexyl-phenyl ketone, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 2-methyl-[4-(methylthio)phenyl]-2-morpholinopropane-1-one, 2-benzyl-2- Dimethylamino-1-(4-morpholinylphenyl)-butanone-1, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzophenone, methyl o-benzoylbenzoate, 4-phenylbenzophenone, 4,4-dichlorobenzophenone, hydroxybenzophenone, 4-benzoyl-4'-methyl-diphenyl sulfide, alkylated benzophenone, 3,3',4,4'-tetrakis(tert-butylperoxycarbonyl)benzophenone, 4-benzoyl-N,N-dimethyl-N-[2-(1-oxo-2-propylene)] [Benzyloxy)ethyl]benzyl ammonium bromide, (4-benzoylbenzyl)trimethylammonium chloride, 2-hydroxy-3-(4-benzoylphenoxy)-N,N,N-trimethyl-1-propenammonium chloride monohydrate, 2-isopropylthioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-dichlorothioxanthone, 2-hydroxy-3-(3,4-dimethyl-9-oxo-9H-thioxan-2-yloxy)-N,N,N-trimethyl-1-propanammonium chloride, 2,4,6-trimethylthioxanthone benzoylphenylphosphine oxide, 1,2-octanedione-1-[4-(phenylthio)-2-(o-benzoyl oxime)], ethyl ketone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(o-acetyl oxime), 2,2'-bis(o-chlorophenyl)-4,5,4',5'-tetraphenyl-1,2-biimidazole, 10-butyl-2-chloroacridone, 2-ethylanthraquinone, benzil, 9,10-phenanthrenequinone, camphorquinone, methyl benzoylformate (methylphenyl glyoxy ester), η5-cyclopentadienyl-η6-cumyl-iron (1+)-hexafluorophosphate (1-), diphenyl sulfide derivatives, bis(η5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl)titanium, 4,4-bis(dimethylamino)benzophenone, 4,4-bis(diethylamino)benzophenone, thioxanthone, 2-methylthioxanthone, 2-chlorothioxanthone, 4-benzoyl-4-methylphenyl ketone, dibenzyl ketone, fluorenone, 2,3-diethoxyacetophenone, 2,2-Dimethoxy-2-phenyl-2-phenylacetophenone, 2-hydroxy-2-methylpropiophenone, p-tert-butyldichloroacetophenone, benzylmethoxyethyl acetal, anthraquinone, 2-tert-butylanthraquinone, 2-aminoanthraquinone, β-chloroanthraquinone, anthrone, benzanthrone, dibenzosuberone, methylene anthrone, 4-azidobenzylideneacetophenone, 2,6-bis(p-azidobenzylidene)cyclohexane, 2,6-bis(p-azidobenzylidene)cyclohexane Combinations of photoreducible pigments such as eosin and methylene blue with reducing agents such as ascorbic acid and triethanolamine, naphthalenesulfonyl chloride, quinolinesulfonyl chloride, N-phenylthioacridone, 4,4-azobisisobutyronitrile, benzothiazole disulfide, triphenylphosphine, carbon tetrabromide, tribromophenylsulfone, benzoyl peroxide, etc.

[0077] The resin composition may contain two or more photopolymerization initiators, preferably containing at least 0.1 parts by weight per 100 parts by weight of the total solid content of the resin composition, thereby curing the uncured resin composition. Furthermore, the cross-linking agent is preferably contained at or below 30 parts by weight per 100 parts by weight of the total solid content of the resin composition. Within this range, sufficient curability can be imparted, and the cured resin film will have an elastic modulus within a preferred range.

[0078] The thickness of the film of the resin composition containing a curable resin formed in the first stack is preferably selected from the range of 0.1 μm or more and 10 μm or less in an uncured state. As a lower limit, it is preferably 0.3 μm or more, more preferably 0.5 μm or more, and further preferably 0.7 μm or more. By having a thickness of 0.3 μm or more, the uncured resin composition partially covers the protruding electrode portion of the semiconductor element, and by curing the film in the step (3) described later, the bonding strength between the cured resin film and the semiconductor element becomes higher, which can prevent the following situation: in the irradiation of the ultraviolet laser in the step (4) described later, due to the pressure of the gas generated when the cured resin film between the semiconductor elements is removed by ablation, the semiconductor element is positionally offset on the resin film. In addition, as the upper limit of the thickness of the resin composition containing a curable resin formed in the first stack, it is preferably 3.0 μm or less, more preferably 2.0 μm or less, and further preferably 1.5 μm or less. By having a thickness of 3.0 μm or less, when in the state of the third stack described later, the resin composition containing the curable resin can be prevented from exceeding the portion where the protruding electrode portion is present and being coated on the side of the semiconductor layer of the semiconductor element. During the irradiation of the ultraviolet laser in the later-described step (4), the cured resin film between the semiconductor elements and the separation of the semiconductor elements from the second substrate can be efficiently performed, thereby improving the mounting yield of the semiconductor elements on the resin film.

[0079] The 1% weight loss temperature of the curable resin contained in the resin composition applied to the first substrate when curing is preferably 300°C or higher. By setting the 1% weight loss temperature to 300°C or higher, the cured resin film (cured film) has high heat resistance, thereby preventing the following situation: when the cured resin film between the semiconductor elements is removed by ablation during laser irradiation in step (4) described later, the cured resin film between the semiconductor elements and the first substrate is excessively removed, causing the semiconductor elements to peel off from the first substrate. In addition, in order to efficiently remove the cured resin film between the semiconductor elements during laser irradiation in step (4), the 1% weight loss temperature of the curable resin contained in the resin composition applied to the first substrate when curing is preferably 500°C or lower.

[0080] Next, the second laminate used in the present invention will be described.

[0081] The second stacked body used in the present invention is a stacked body formed by arranging a plurality of semiconductor elements having at least one protruding electrode portion on a second substrate having ultraviolet light transparency so that the protruding electrode portion protrudes toward the side opposite to the surface of the second substrate.

[0082] The so-called substrate with ultraviolet light transmittance refers to a substrate having an absorbance of 0.1 or less at any wavelength of at least 200nm to 380nm. Examples of substrates with such absorbance include inorganic substrates such as quartz, sapphire, alkali glass, alkali-free glass, and borosilicate glass. The thickness of the substrate can be selected within a range that does not impair the absorbance, and is preferably 0.1mm to 5.0mm. From the perspective of substrate processing, the thickness of the substrate is preferably 0.3mm or more, and from the perspective of obtaining versatility, the thickness of the substrate is more preferably 2.0mm or less. In addition, the second substrate is preferably a substrate that is transparent to the laser used when irradiating the ultraviolet laser from the side of the second substrate described later.

[0083] As long as the second substrate has the aforementioned absorbance, an organic substrate such as PET, polyaramide, polyester, polypropylene, or cycloolefin can also be used. When using an organic substrate, the thickness of the substrate can be selected within a range that does not compromise the aforementioned absorbance, preferably ranging from 0.05 mm to 3.0 mm. From the perspective of substrate handling, the thickness is preferably 0.1 mm or greater. To suppress light scattering during laser irradiation, the thickness is more preferably 1.0 mm or less.

[0084] As the semiconductor elements used in the present invention, there can be cited semiconductor elements that are element-ized by having at least one protruding electrode portion directly or via other layers on one surface of a semiconductor layer obtained by singulating semiconductors such as GaN, AlN, InN, InP, GaAs, Si, and SiC. These semiconductor elements also include semiconductor elements further stacked with different types of semiconductor layers, or semiconductor elements stacked with sapphire substrates or glass substrates, wiring, etc. Among them, in the present invention, light emitting diodes (LEDs) are preferred, and micro-LEDs are more preferred. The size of the micro-LED is, for example, 0.5 μm or more and 200 μm or less on one side. The height of the micro-LED is, for example, 0.5 μm or more and 200 μm or less, including the height of the protruding electrode portion.

[0085] The protruding electrode portion is an electrode composed of a metal such as Au, In, Sb, Ag, Sn, or Pb, and is used to connect a semiconductor element to a circuit substrate, etc. It suffices to have at least one protruding electrode portion on one surface of the semiconductor element, and two or more protruding electrode portions may be present on the same surface. The size of the protruding electrode portion is generally smaller than the size of the semiconductor element. The size of the protruding electrode portion of a micro-LED is, for example, greater than 0.2 μm and less than 100 μm on one side. The height of the protruding electrode portion of a micro-LED is, for example, greater than 0.1 μm and less than 50 μm.

[0086] In the second stack used in the present invention, a plurality of semiconductor elements are arranged in a two-dimensional manner on a second substrate having ultraviolet light transmittance, for example, in a lattice configuration. In addition, each semiconductor element is fixed by means of being able to peel off at the interface between the semiconductor element and the second substrate when irradiated with ultraviolet laser light. The plurality of semiconductor elements can be exemplified in a state where they are arranged in a lattice at a certain interval in the X-axis direction and the Y-axis direction. The number of the plurality of semiconductor elements arranged on the second substrate is preferably set to 5 / cm per unit area. 2 More than 50 pieces / cm 2 By setting the number of semiconductor elements to 5 / cm 2 The above-mentioned effect of improving the yield by laser transfer becomes greater. In addition, the number of the plurality of semiconductor elements arranged on the second substrate is preferably set to 500,000 / cm2 per unit area. 2 Below, more preferably 100,000 / cm 2 By setting the number of semiconductor elements to 500,000 / cm 2 This can prevent the adjacent semiconductor elements from being erroneously transferred due to a positional shift of the laser spot during laser transfer. The interval between adjacent semiconductor elements can be, for example, 0.1 μm to 200 μm.

[0087] The second stack can also be formed by directly forming a semiconductor element on a crystal growth substrate such as sapphire. In this case, a buffer layer is sometimes provided at the interface between the crystal growth substrate and the semiconductor element. When the second stack is irradiated with ultraviolet laser light from the second substrate side, the buffer layer at the interface between the crystal growth substrate and the semiconductor element preferentially decomposes, allowing the semiconductor element to be separated while minimizing its decomposition.

[0088] The second stack may also have another layer between the second substrate having ultraviolet light transmittance and the semiconductor element. In this case, the plurality of semiconductor elements are arranged so that the protruding electrode portion protrudes toward the side opposite to the surface of the second substrate. As the other layer, an adhesive layer can be exemplified. The adhesive layer preferably has an absorbance of 0.1 or less when converted to a film thickness of 1.0 μm at any wavelength between 200 nm and 380 nm so as not to hinder the removal of the resin film between adjacent semiconductor elements by ultraviolet laser irradiation in the step (4) described later. When the third stack described later is irradiated with ultraviolet laser from the second substrate side, peeling (separation) occurs at the interface between the second substrate and the semiconductor element, or when there is another layer between the second substrate having ultraviolet light transmittance and the semiconductor element, peeling (separation) occurs at the interface between the semiconductor element and the other layer. However, the phenomenon can be considered to be the case where the other layer (for example, the adhesive layer) itself is vaporized and separated, or the nitride film or the like present at the interface on the second substrate side of the semiconductor element body (semiconductor layer) is decomposed and separated.

[0089] <Process (2)>

[0090] In step (2), the first stacked body and the second stacked body are bonded together so that the surface on which the resin composition containing the curable resin is formed into a film faces the surface on which the semiconductor element is arranged, thereby obtaining a third stacked body.

[0091] In step (2), the first laminate and the second laminate are bonded together so that the surface on which the resin composition containing the curable resin is formed into a film is opposite to the surface on which the semiconductor element is disposed. There is no limitation on the bonding method as long as bonding is possible. For example, a method of bonding the first laminate and the second laminate using a bonding device capable of controlling the pressure during bonding, such as a vacuum laminator, a wafer bonder, or a press, can be cited. According to such a method, the first laminate and the second laminate can be bonded evenly. Regarding the pressing conditions, if an uncured film of a resin composition containing a curable resin is in contact with a protruding electrode portion, any conditions can be selected, but by burying the entire surface of the protruding electrode portion in contact with the film of the resin composition in the uncured resin composition, when the resin composition contained in the third stack is cured in the later-described step (3), the bonding strength between the cured resin film and the semiconductor element becomes higher, and peeling at the interface between the cured resin film and the semiconductor element can be prevented after curing in step (3) or during ultraviolet laser irradiation in the later-described step (4).

[0092] The pressure during compression bonding is preferably 0.05 MPa or higher to ensure that the entire surface of the protruding electrode portion in contact with the uncured resin film is buried in the uncured resin composition, and preferably 10.0 MPa or lower to prevent damage to the semiconductor element during compression bonding.

[0093] The temperature during compression bonding can be selected at any temperature, but is preferably between 20°C and 100°C to maintain the resin film in an uncured state during compression bonding. The compression bonding time can be selected at any time, but is preferably at least 5 seconds after reaching the set pressure to ensure sufficient bonding. Furthermore, to shorten the processing time, it is preferably 30 minutes or less. The compression bonding environment may be a vacuum, air, or an inert atmosphere.

[0094] In step (2), since the protruding electrode portion is embedded in the film of the uncured resin composition, the portion of the uncured resin composition squeezed out by the protruding electrode portion moves between adjacent semiconductor elements, and the thickness of the film of the resin composition located between the semiconductor elements is thicker than that of the first stack.

[0095] <Process (3)>

[0096] In step (3), the resin composition containing the curable resin contained in the third laminate is cured to form a cured resin film.

[0097] The curing of the resin composition in the third laminate is carried out by heating or irradiation with active energy rays, so that the uncured resin composition is in a cured state. In the case of curing by heating, a hot plate, a drying oven, infrared rays, etc. are used. As long as it is a temperature at which the uncured resin composition becomes a cured state without damaging the semiconductor element, it can be implemented at any temperature. For example, by being 100°C or more, the film of the uncured resin composition can be cured, and by being 300°C or less, thermal decomposition generated together with the curing of the film of the resin composition can be prevented. As long as the heating time is sufficient for the film of the uncured resin composition to become a cured state, any time can be selected. The appropriate time varies according to the type or film thickness of the resin composition, but is preferably about one minute to several hours. The environment during heating can also be a vacuum, atmosphere or inert environment.

[0098] In addition, preferred form is when heating, in the mode of pressurizing between the first substrate and the second substrate, the 3rd stack is pressurized. In addition, preferably under the state of pressurization, that is, under the state of applying pressure between the first substrate and the second substrate, the solidification of resin composition is carried out in the 3rd stack. By heating while pressurizing, the peeling of the 3rd stack caused by the warping of the substrate, that is, the peeling of the film of the resin composition in the 3rd stack and the interface of the semiconductor element can be suppressed. The method of pressurization is preferably, for example, to heat while pressurizing using a pressure bonding device that can control the pressure during pressurization such as a vacuum laminator or a wafer bonder, a press machine. When pressurizing, preferably from the side of the first substrate or from the side of the second substrate (in addition, including a pressurization operation for two substrates), use a pressurizing device with a pressurized surface that can be pressurized for the entire surface of the face where the semiconductor element in the first stack is in contact with the resin film in the second stack, and the entire surface where the semiconductor element in the first stack is in contact with the resin film in the second stack is pressurized. The pressure applied is arbitrary, but to minimize the effects of substrate warping, it is preferably 0.05 MPa or higher. Furthermore, to prevent damage to the semiconductor device during pressurization, it is preferably 10.0 MPa or lower. The appropriate duration of pressurization varies depending on the type and thickness of the resin film, but is preferably from one minute to several hours. The pressurization environment may also be a vacuum, atmospheric air, or an inert atmosphere.

[0099] Alternatively, the same apparatus may be used in steps (2) and (3), and the curing treatment of step (3) may be performed directly without releasing the pressure on the third laminate after step (2). In this case, by not releasing the pressure between steps (2) and (3), it is possible to suppress the occurrence of peeling at the interface between the resin composition film in the third laminate and the semiconductor element due to warping of the substrate.

[0100] Furthermore, when curing the uncured resin composition by irradiation with active energy rays, a method of irradiating the third laminate with active energy rays using an exposure machine or the like can be mentioned. Examples of active energy rays used in this case include ultraviolet rays, visible light rays, electron beams, and X-rays. In such cases, it is also preferred to cure the resin composition within the third laminate under pressure. Furthermore, the pressurization method or conditions described for curing under heating can be applied.

[0101] Preferably, after the step (3) is completed, the cured resin composition is in contact with the entire surface of the protruding electrode portion. The degree to which the cured resin composition is in contact with the protruding electrode portion can be evaluated based on the depth of embedding of the protruding electrode portion into the cured resin film. When the electrode portion side of the semiconductor element that is in contact with the resin film is set as the bottom, and the semiconductor layer side is set as the top, the embedding depth is equivalent to the height between the uppermost and lowermost parts of the electrode portion that is in contact with the resin film. In the state where the cured resin is in contact with the entire surface of the protruding electrode portion, the embedding depth into the cured resin film is consistent with the height of the protruding electrode portion. Regarding the embedding depth into the cured resin film, in more detail, as Figure 1 As shown, it corresponds to the uppermost portion (H a ) and the bottom (H b ) between the height (H ab ). By aligning the embedding depth with the height of the protruding electrode portion, the bonding area between the semiconductor element and the resin film in the cured third stack is increased, and the bonding strength is improved. When irradiating the ultraviolet laser in the later-described step (4), the pressure of the decomposition gas generated by the ablation of the film of the cured resin composition can be prevented from peeling off the interface between the semiconductor element and the resin film in the third stack. The embedding depth can be measured by cutting out a cross-section of the third stack using a focused ion beam (FIB) and observing it using a scanning electron microscope (SEM) to obtain an image.

[0102] In order to make the embedding depth of the protruding electrode portion into the resin film after curing consistent with the height of the protruding electrode portion, the shrinkage rate of the resin composition film when changing from an uncured state to a cured state is preferably 0% or more and 10% or less. By having the shrinkage rate within the preferred range, the resin film that covers the entire surface of the protruding electrode portion in the uncured state can also maintain the state of covering the entire surface of the protruding electrode portion after curing, and the embedding depth can be made consistent with the height of the protruding electrode portion. The shrinkage rate of the resin composition film when changing from an uncured state to a cured state is more preferably 0% or more and 5% or less, and further preferably 0% or more and 3% or less. Regarding the shrinkage rate of the resin composition film when changing from an uncured state to a cured state, in the case of heat curing, for example, the film thickness of the uncured resin composition of the first laminate in step (1) and the film thickness of the cured resin film after heat curing by heating the first laminate at 250°C for 30 minutes can be measured and calculated based on the reduction in film thickness. In the case of active energy ray curing, for example, the film thickness of the uncured resin composition of the first laminate in step (1) can be measured by using a UV exposure machine at 1000 mJ / cm 2The thickness of the cured resin film after irradiating the first laminate with an exposure dose of 1000 nm was calculated from the reduction in thickness.

[0103] <Step (4)>

[0104] In step (4), ultraviolet laser light is irradiated from the second substrate side of the third stack, thereby separating the second substrate from the third stack at the interface between the second substrate and the semiconductor element, and removing at least a portion of the cured resin film between the semiconductor elements. The term "removing at least a portion" herein refers to a state in which, in the cured resin film between the semiconductor elements, a portion of the cured resin film is no longer present between the first and second substrates.

[0105] In step (4), the ultraviolet laser is irradiated from the second substrate side of the third stack. The ultraviolet laser used when separating the second substrate from the third stack at the interface between the second substrate and the semiconductor element is not limited as long as it vaporizes other layers (for example, the adhesive layer) itself or decomposes the nitride film or the like present at the second substrate side interface of the semiconductor element body (semiconductor layer), thereby separating the second substrate from the semiconductor element. The laser wavelength is not limited as long as it is a wavelength in the ultraviolet range (for example, 200nm to 380nm). Examples of wavelengths include 248nm, 266nm, 308nm, and 355nm. Examples of laser types include solid-state lasers such as yttrium aluminum garnet (YAG) lasers, YVO4 lasers, fiber lasers, semiconductor lasers, carbon dioxide lasers, excimer lasers, and gas lasers such as argon lasers. The type of laser can be selected according to the target wavelength. The beam shape of the ultraviolet laser used for irradiation is not limited, and the spot size of the ultraviolet laser can be larger or smaller than the size of the semiconductor element. Furthermore, if the spot size is smaller than the size of the semiconductor element, the entire surface of the region of the third stack where the semiconductor element is bonded can be irradiated with ultraviolet laser light while the spot is moved.

[0106] In addition, the energy density of the ultraviolet laser can be any energy density as long as it is sufficient for separating the semiconductor element from the second substrate. In order to sufficiently reduce the adhesion between the second substrate and the semiconductor element, the energy density of the ultraviolet laser is preferably 100 mJ / cm 2 From the perspective of preventing damage to semiconductor devices, 2000 mJ / cm 2Below. Furthermore, regarding the number of scans of laser irradiation, as long as a portion of the semiconductor element decomposes at the interface between the second substrate and the semiconductor element, thereby being able to separate the second substrate from the third stack, it can be one or more times. From the perspective of sufficiently reducing the adhesion at the interface between the second substrate and the semiconductor element, the number of scans of laser irradiation is preferably more than one, and from the perspective of shortening the processing time, it is preferably five times or less. More preferably, it is three times or less, and further preferably two times or less, and particularly preferably once. In the case of multiple scans, the wavelength, energy density, and spot size can also be changed separately each time.

[0107] Furthermore, in step (4), ultraviolet laser light is irradiated from the second substrate side of the third stack to remove at least a portion of the cured resin film located between adjacent semiconductor elements. By removing at least a portion of the cured resin film located between adjacent semiconductor elements, during subsequent laser transfer using the transfer stack, the resin film of the semiconductor element to which the transfer object is fixed is easily broken or disappears due to ablation, thereby reducing the energy density of the laser required for laser transfer. In addition, during laser transfer, the adjacent semiconductor element can be prevented from being transferred or a portion of the adjacent element from being peeled off from the resin film due to positional deviation of the laser spot.

[0108] Furthermore, it is preferred that in step (4), the cured resin film present between adjacent semiconductor elements is removed by ultraviolet laser, and the unit (division) of the bonded body of each semiconductor element and the cured resin film is divided. That is, it is preferred to remove the resin film so that no cured resin film exists between the first substrate and the second substrate throughout the entire circumference of each semiconductor element. By dividing each semiconductor element in the state of a unit bonded to the cured resin film, during the subsequent laser transfer using the transfer stack, the resin film of the semiconductor element to which the transfer target is fixed does not touch the resin film of the adjacent semiconductor element to which the transfer target is fixed. Therefore, even if the position of the laser spot is offset, the laser can be prevented from irradiating the resin film of the adjacent semiconductor element to which the transfer target is not fixed, and only the target semiconductor element is transferred, thereby preventing the adjacent semiconductor element from being transferred. Furthermore, by dividing each semiconductor element in the state of a unit bonded to the cured resin film, it is possible to prevent the following situation: when the cured resin film remains between the elements, the resistance caused by the resin film between the elements when the laser transfer is broken causes the semiconductor element to be transferred in an inclined state, thereby reducing the accuracy.

[0109] Here, the absorbance and energy density are preferably set as follows: when the absorbance of the cured resin film at the wavelength of the ultraviolet laser is converted to a film thickness of 1.0 μm is set as X, and the energy density of the ultraviolet laser is set as Y mJ / cm 2When the value of the product of X and Y is 400 or more and 7,000 or less. By having a value of 400 or more for the product of X and Y, it is easy to remove the cured resin film between adjacent semiconductor elements, and the unit (division) of the joint of each semiconductor element and the cured resin film can be divided with fewer scans of laser irradiation. The value of the product of X and Y is more preferably 450 or more. In addition, by having a value of 7,000 or less for the product of X and Y, the positional offset or peeling of the semiconductor element on the cured resin film can be suppressed. The value of the product of X and Y is more preferably 6,500 or less, and further preferably 5,500 or less. In addition, in the case of utilizing multiple wavelengths as the ultraviolet laser, the sum of the values ​​of the product of X and Y obtained at each wavelength is preferably 400 or more and 7,000 or less.

[0110] The width of the part where the cured resin film does not exist (the length of the line segment parallel to the center of gravity of the semiconductor element on the part where the resin film does not exist) is removed from the cured resin film and is preferably 1.0 μm or more. By being 1.0 μm or more, when the resin film of each unit is larger than the size of the semiconductor element, it is possible to prevent the laser from irradiating the resin film to which the adjacent semiconductor element that is not the transfer object is fixed when the center of the laser spot deviates from the center of the semiconductor element. In addition, the width of the part where the resin film does not exist is less than the width between the protruding electrode portions of the adjacent semiconductor elements. The width of the part where the resin film does not exist can be obtained by cutting a cross section using FIB within the range of the semiconductor element to be measured on the transfer laminate and the semiconductor element adjacent to the element, and observing using SEM.

[0111] In addition, the area of ​​the portion of the unit (division) of the semiconductor element and the cured resin film assembly that is divided by the portion where the cured resin film does not exist, which is in contact with the second substrate, may be larger or smaller than the area of ​​the lower surface of the semiconductor element. The area of ​​the portion in contact with the second substrate is not particularly limited, but is preferably at least 50% of the area of ​​the lower surface of the semiconductor element. By being at least 50%, the semiconductor element can be firmly held on the cured resin film. In addition, it is preferably at most 120% of the area of ​​the lower surface of the semiconductor element. By being at most 120%, the distance between adjacent units of the assembly of the semiconductor element and the cured resin film can be extended.

[0112] Next, the transfer laminate of the present invention will be described.

[0113] Furthermore, the transfer laminate of the present invention can be obtained by the above-mentioned method for producing a transfer laminate, but the production method is not limited to the above-mentioned method for producing a transfer laminate.

[0114] The transfer laminate of the present invention is a transfer laminate in which (C) a plurality of semiconductor elements having protruding electrode portions are bonded to a substrate with a cured film on which (A) a light-transmitting substrate (first substrate) and (B) a cured film obtained by curing a resin composition containing a curable resin are laminated, with the depth of the protruding electrode portions embedded in the cured film being equal to the height of the protruding electrode portions, the plurality of semiconductor elements being connected to adjacent semiconductor elements without the aid of the cured film, and the shortest distance between the protruding electrode portions and the first substrate being 0.1 μm or more and 1.0 μm or less.

[0115] Examples of the curable resin used in the cured film after curing the resin composition containing the curable resin (B) include the curable resin used in the resin composition provided to the first substrate as described above.

[0116] (B) The cured film after curing of the resin composition containing a curable resin is preferably 0.4 or more and 5.0 or less when converted to a film thickness of 1.0 μm at any wavelength in the range of 200 nm to 1100 nm. By having an absorbance of more than 0.4, when the cured film is irradiated with a laser from the side of the first substrate with light transmittance and the semiconductor element is transferred to a substrate arranged oppositely, the cured film can be used to efficiently absorb the laser after irradiation. As the lower limit of the absorbance, it is more preferably more than 0.6, and the absorption of the laser near the interface between the cured film and the first substrate with light transmittance can be particularly efficiently performed, so that transfer can be performed with lower energy. In addition, from the viewpoint of material design, as the upper limit of the absorbance, it is more preferably less than 5.0, and in terms of using a resin with versatility, it is more preferably less than 4.0.

[0117] (B) The curable resin used in the cured film after curing of the resin composition containing the curable resin preferably has a conjugated structure in the structure. By having a conjugated structure in the curable resin, the absorbance when converted to a film thickness of 1.0 μm at any wavelength of 200 nm to 1100 nm in the state of the cured resin film can be adjusted to a range of 0.4 or more and 5.0 or less. As the structure having a conjugated structure, an aromatic structure can be listed, among which the structure of biphenyl, imide, benzoxazole, and benzophenone is preferred. The absorbance can be achieved by setting all the monomer residues constituting the resin to 100 mol % and setting more than 60 mol % of the monomer residues to monomer residues having a conjugated structure. The curable resin having the conjugated structure can be contained alone in the resin film or mixed with other resins. In order to easily obtain the desired physical properties, it is preferred to use polyimide siloxane.

[0118] The cured film after the resin composition (B) comprising a curable resin used in the present invention is cured can also achieve the absorbance by containing additives such as an ultraviolet absorber or a pigment, a dye, or a pigment in the resin film. As examples of additives contained in the cured film, the additives that can be contained in the resin composition imparted to the first substrate as described above can be cited as an example. These can be contained alone in the cured film or can contain multiple. Relative to 100 parts by weight of the cured film after the resin composition (B) comprising a curable resin is cured, the content of the additive in the cured film so that the absorbance is within the range is preferably more than 0.1 parts by weight. In addition, from the perspective of stability of the resin composition before forming the laminate, it is preferably less than 50 parts by weight.

[0119] In the transfer laminate of the present invention, (C) a plurality of semiconductor elements having protruding electrode portions are bonded in a state where the embedding depth of the protruding electrode portions into the cured film is equal to the height of the protruding electrode portions, and the plurality of semiconductor elements are bonded as follows. Figure 2 As shown, the semiconductor elements are not connected to adjacent semiconductor elements via the cured film. Since the semiconductor elements are not connected to adjacent semiconductor elements via the cured film, that is, there is no cured film between each semiconductor element and the adjacent semiconductor elements throughout the entire circumference. During the subsequent laser transfer using the transfer stack, the cured film of the semiconductor element to which the transfer target is fixed does not touch the cured film of the adjacent semiconductor element to which the transfer target is fixed. Therefore, even if the position of the laser spot shifts in any direction, the laser can be prevented from irradiating the cured film of the adjacent semiconductor element to which the transfer target is fixed. Only the target semiconductor element is transferred, and the adjacent semiconductor element can be prevented from being transferred. Furthermore, by dividing the individual semiconductor elements in the state of being bonded to the cured film as a unit, the following situation can be prevented: when the cured resin film remains between the elements, the resistance caused by the resin film between the elements breaking during laser transfer causes the semiconductor element to be transferred in an inclined state, thereby reducing the accuracy.

[0120] The transfer laminate of the present invention is bonded to a state where the depth of embedding of the protruding electrode portions provided on the semiconductor element into the cured film matches the height of the protruding electrode portions. By bonding the protruding electrode portions so that the embedding depth of the protruding electrode portions into the cured film matches the height of the protruding electrode portions, (C) the plurality of semiconductor elements having the protruding electrode portions are securely held on (B) the cured film after curing of the resin composition containing a curable resin, thereby improving the handling properties of the transfer laminate.

[0121] In the transfer stack of the present invention, the shortest distance between the protruding electrode portion of the semiconductor element and the substrate is 0.1 μm or more and 1.0 μm or less. By being more than 0.1 μm, the damage to the semiconductor element can be reduced during laser transfer. On the other hand, by being less than 1.0 μm, the pressure efficiency of the gas generated by the ablation of the interface of the cured film after the cured film of the resin composition containing curable resin (B) by (A) having light transmittance during laser transfer is well transmitted to the semiconductor element, thereby improving the positional accuracy during laser transfer. About the thickness of the cured film (B) between the bottom of the protruding electrode portion and the substrate (A), the cross section of the transfer stack can be cut out by FIB processing and measured according to the image obtained by SEM observation.

[0122] The transfer laminate of the present invention is preferably that the semiconductor element and (B) comprise the cured film after the resin combination of curable resin is cured with the strength being more than 5mN and less than 30mN.Being more than 5mN by then strength, semiconductor element is fully maintained on cured film, so that handleability improves.Being less than 30mN by then strength, semiconductor element can be separated from transfer laminate efficiently when laser transfer.The semiconductor element and cured film's strength can be measured by grain shear tester.

[0123] The transfer laminate of the present invention preferably has a cured film after curing of the resin composition (B) containing a curable resin, and an indentation elastic modulus at a depth of 20 nm to 40 nm from the resin film surface at 25°C of 1.0 GPa or more and 7.0 GPa or less. By having an elastic modulus of 1.0 GPa or more, the semiconductor element is sufficiently retained on the cured resin film, thereby improving handleability. By having an elastic modulus of 7.0 GPa or less, the pressure of the gas caused by ablation generated at the interface between the first substrate and the cured film during laser transfer can be efficiently transmitted to the semiconductor element, thereby transferring the semiconductor element with high positional accuracy.

[0124] The transfer stack of the present invention can also be produced using a method different from the above-mentioned steps (1) to (4). Specifically, the following method can be exemplified: for the third stack of step (3), ultraviolet laser light is irradiated from the second substrate side, the second substrate is separated from the third stack at the interface between the second substrate and the semiconductor element, and then the resin film between the semiconductor elements is wet-etched or dry-etched to be removed. Furthermore, in the case of a second stack produced by applying a substrate such as GaAs that can be removed by etching to the second substrate, the following method can be exemplified: for the third stack after curing in step (3), the second substrate is removed by etching, and then the resin film between the semiconductor elements is wet-etched or dry-etched to be removed.

[0125] Next, a method for manufacturing a semiconductor device using the transfer laminate of the present invention will be described.

[0126] The method for manufacturing a semiconductor device using the transfer stack of the present invention includes: a process of making the surface of the transfer stack on one side where the semiconductor element is provided face the third substrate on which the semiconductor device is mounted; and then irradiating the transfer stack with a laser from the side of the first substrate to remove the cured resin film of the first substrate and transfer the semiconductor element to the third substrate.

[0127] The third substrate can be any substrate, such as a glass substrate, a resin substrate, a metal substrate, or a circuit substrate with pre-wired wiring. Furthermore, the third substrate may have an adhesive layer to retain the transferred semiconductor element. The adhesive layer can be made of an adhesive material such as polysiloxane resin, acrylic resin, polyester resin, or polyurethane resin. The thickness of the adhesive layer is within the range of 0.5 μm to 100 μm, depending on the size of the semiconductor element or the distance between the semiconductor element and the third substrate.

[0128] When a circuit board is used as the third substrate, a conductive bonding material such as anisotropic conductive film (ACF), conductive silver paste, or solder may be formed on the wiring.

[0129] Furthermore, for transfer alignment, an alignment mark may be provided on the third substrate side.

[0130] Next, a step of transferring the semiconductor element to the third substrate by irradiating the transfer laminate with laser light from the side of the first substrate having light transparency will be described using the drawings. Figure 3 An example of the transfer process is shown in FIG.

[0131] The transfer stack 120 and the third substrate 21 produced by the above method are irradiated with laser light from a laser irradiation device 31 from the first substrate side of the transfer stack 120 through the first substrate 14 toward the semiconductor element. Examples of the type of laser light include solid-state lasers such as YAG lasers, YVO4 lasers, fiber lasers, semiconductor lasers, and gas lasers such as carbon dioxide lasers, excimer lasers, and argon lasers, and the type of laser light can be selected according to the wavelength used.

[0132] As long as the cured resin film can be removed, the laser energy density can be selected at any value. Regarding the laser energy density, from the perspective of the stability of the laser energy density, it is preferably 1 mJ / cm 2 From the perspective of preventing damage to semiconductor devices, 2000 mJ / cm 2More preferably, the energy density of the laser is 10 mJ / cm 2 Above and 1000mJ / cm 2 the following.

[0133] By using the transfer laminate of the present invention, the target semiconductor element can be transferred with high precision even when the center of the laser spot is offset from the center of the semiconductor element, preventing the transfer of adjacent semiconductor elements that are not the transfer target. The margin of the laser spot also depends on the distance from the adjacent semiconductor element, and preferably allows for high-precision transfer even when the spot is offset from the center of the semiconductor element by 1 μm to 5 μm. In this case, the shape of the laser spot is not limited. In addition, the spot size is preferably set to a size that can illuminate the entire cured film in contact with the transfer target semiconductor element, and is smaller than the size of the cured film in contact with the adjacent semiconductor element.

[0134] Furthermore, the third substrate 21 can be heated during transfer of the semiconductor element. In particular, when an adhesive layer is formed on the third substrate, the retention of the transferred semiconductor element is improved. When the third substrate is heated, the temperature of the third substrate is preferably set to 100°C or less to prevent thermal warping of the third substrate and to allow transfer with high positional accuracy.

[0135] The semiconductor element is transferred while adjusting the position according to the actual mounting position of the semiconductor element in the manufactured semiconductor device. For example, in the case of manufacturing a substrate for an LED display, the transfer is performed in a manner that widens the interval between the LED elements according to the pixel size of the LED and the configuration of RGB. At this time, it is preferred that the transfer stack and the third substrate are spaced apart and face each other to such an extent that the semiconductor element and the third substrate do not contact each other. In the case of performing laser transfer while moving the position of the transfer stack or the third substrate in order to widen the interval between the LED elements, by spacing the semiconductor element and the third substrate apart and facing each other to such an extent that the semiconductor element and the third substrate do not contact each other, unintentional transfer or peeling of the semiconductor element caused by contact can be prevented. As a spacing, it is preferred that the shortest distance between the semiconductor element and the surface of the third substrate is 20 μm or more. In order to prevent a decrease in positional accuracy during laser transfer, it is preferred that the shortest distance between the semiconductor element and the surface of the third substrate is 500 μm or less.

[0136] Next, the third substrate, onto which the LED elements have been transferred, is brought face-to-face with the circuit substrate and pressure-bonded to the circuit substrate, thereby producing a circuit substrate on which the LED elements are mounted. Using the laminate of the present invention for transfer allows for high positional accuracy, allowing the semiconductor elements to be transferred without shifting from the circuit board of the final mounted substrate, thus reducing mounting defects caused by positional shifts.

[0137] The laser preferably has a wavelength of 248 nm, 266 nm, 308 nm, 355 nm, 532 nm, or 1064 nm, and particularly preferably has a wavelength at which the absorbance of the resin film is 0.4 or greater when converted to a film thickness of 1.0 μm. By using these lasers, semiconductor elements can be transferred with high precision.

[0138] In the semiconductor device manufacturing method of the present invention, the laser irradiation from the first substrate side is preferably performed using a laser having a wavelength of 248 nm, 266 nm, or 355 nm. This allows accurate transfer of even tiny semiconductor elements such as micro-LEDs. Excimer lasers and YAG lasers are particularly preferred as lasers having wavelengths of 248 nm, 266 nm, or 355 nm.

[0139] In addition, the method for manufacturing a semiconductor device of the present invention preferably comprises a circuit substrate. If the third substrate is a circuit substrate, the substrate transferred using the method can be directly manufactured into a semiconductor device. Furthermore, since a subsequent transfer step from the third substrate to the circuit substrate is not required, there is no concern about positional shifting during the subsequent steps, further improving positioning accuracy. A thin film transistor (TFT) substrate or a printed wiring board can be used as the circuit substrate.

[0140] Hereinafter, the present invention will be described in more detail using examples.

[0141] Example

[0142] Hereinafter, the present invention will be described with reference to Examples, but the present invention is not limited to these Examples.

[0143] The transfer laminate (hereinafter referred to as "laminate 4") is prepared by the method described in the following first embodiment (Examples 1 to 24, Comparative Examples 1 to 3), the method described in the second embodiment (Example 25), or the method described in the third embodiment (Example 26, Example 27).

[0144] <First embodiment>

[0145] <Process (1)>

[0146] (1)-1 Preparation of the first laminate

[0147] A varnish of a resin composition for forming a film of a resin composition containing a curable resin was applied to a 4-inch quartz glass substrate having a thickness of 0.7 mm (manufactured by Corning, with an absorbance of 0.01 at 355 nm at a thickness of 0.7 mm. First substrate) using a spinner, and dried at 120°C for 3 minutes using a hot plate to prepare a first laminate having a film formed of an uncured resin composition containing a curable resin laminated thereon.

[0148] The thickness of the uncured resin film was measured using an optical film thickness meter (Dainippon Screen Co., Ltd., Lambda Ace, refractive index = 1.543). The refractive index used can be selected according to the type of resin to improve measurement accuracy.

[0149] (1)-2 Preparation of the Second Laminated Body

[0150] A 4-inch LED substrate (with alignment marks) was prepared as the second laminate and cut into 20 mm squares using a microtome. The LEDs mounted on it are as follows. The dimensions of the semiconductor element, the dimensions of the protruding electrode portion, and the distance between adjacent elements were measured using a scanning electron microscope (S-4800, manufactured by Hitachi High-Technologies).

[0151] Substrate with UV transparency (second substrate): sapphire substrate (thickness 0.8 mm)

[0152] Type of semiconductor element: GaN

[0153] Semiconductor device dimensions: Width 20.2 μm × Length 30.3 μm × Height 9.4 μm (including the height of the protruding electrode)

[0154] Number of protruding electrodes: Two on one surface

[0155] Dimensions of the protruding electrode: 17.5 μm × 11.0 μm × 3.4 μm

[0156] Metal type of protruding electrode: Au

[0157] Distance between adjacent components: 10.0 μm in width and length

[0158] <Step (2)> Formation of the third laminate

[0159] The first laminate prepared by the method of (1)-1 in the above-described <Step (1)> was placed on a stage of a flip-chip bonder (FC-3000WS, manufactured by Toray Engineering) with the uncured resin composition film exposed on the surface. The second laminate prepared by (1)-2 in the above-described <Step (1)> was then superposed on the stage with the protruding electrode portions of the second laminate in contact with the uncured resin composition film provided on the first laminate. After applying pressure at 0.5 MPa for 2 minutes, the pressure was released to form a third laminate.

[0160] <Step (3)> Curing of the third laminate

[0161] The third laminate obtained in the above-mentioned <Step (2)> was heat-cured in an inert oven (manufactured by Koyo) under an atmospheric environment.

[0162] <Step (4)> Laser irradiation

[0163] Using a laser device (manufactured by Toray Engineering), ultraviolet laser light was irradiated from the second substrate side of the third laminate, after the resin film had been heat-cured by the method described in <Step (3)>. After the entire surface of the second substrate was irradiated with the laser, the second substrate was separated from the third laminate, thereby obtaining the target laminate (laminate 4).

[0164] <Second embodiment>

[0165] <Process (1)'>

[0166] (1) Preparation of the first laminate

[0167] A varnish of a resin composition for forming a film of a resin composition containing a curable resin was applied to a 6-inch quartz glass substrate having a thickness of 0.7 mm (manufactured by Corning, with an absorbance of 0.01 at 355 nm at a thickness of 0.7 mm. First substrate) using a spinner, and dried at 120°C for 3 minutes using a hot plate to prepare a first laminate having a film formed by an uncured resin composition containing a curable resin laminated thereon.

[0168] The thickness of the uncured resin film was measured using an optical film thickness meter (Dainippon Screen Co., Ltd., Lambda Ace, refractive index = 1.543). The refractive index used can be selected according to the type of resin to improve measurement accuracy.

[0169] (1) Preparation of the second laminate

[0170] A 4-inch LED substrate (with alignment marks) was prepared as the second stack. The LEDs mounted thereon were as follows. The dimensions of the semiconductor element, the dimensions of the protruding electrode portion, and the distance between adjacent elements were measured using a scanning electron microscope (S-4800, manufactured by Hitachi High-Technologies).

[0171] Substrate with UV transparency (second substrate): sapphire substrate (thickness 0.8 mm)

[0172] Type of semiconductor element: GaN

[0173] Semiconductor device dimensions: Width 20.2 μm × Length 30.3 μm × Height 9.4 μm (including the height of the protruding electrode)

[0174] Number of protruding electrodes: Two on one surface

[0175] Dimensions of the protruding electrode: 17.5 μm × 11.0 μm × 3.4 μm

[0176] Metal type of protruding electrode: Au

[0177] Distance between adjacent components: 10.0 μm in width and length

[0178] <Step (2)'> Formation of the third laminate

[0179] The temperature of the carrier plate and the upper surface pressurizing plate of a vacuum pressurizing apparatus (manufactured by Mikado Technos, VS08-φ300) was set to 80°C, and the first laminate prepared by the method of the <step (1)'> (1)-1 was placed on the carrier plate of the vacuum pressurizing apparatus in a manner such that the film of the uncured resin composition was exposed on the surface. The second laminate prepared by the <step (1)'> (1)-2 was then overlapped thereon in a manner such that the protruding electrode portion of the second laminate was in contact with the film of the uncured resin composition provided on the first laminate. At this time, the center of the facing surface of the first laminate was aligned with the center of the surface of the second laminate. Thereafter, the entire surface of the first substrate and the second substrate was pressurized at 1.5 kN for 2 minutes, and the pressure was released to form a third laminate.

[0180] <Step (3)'> Curing of the third laminate

[0181] The third laminate obtained in the above-mentioned <Step (2)'> was heat-cured in an inert oven (manufactured by Koyo) under atmospheric conditions.

[0182] <Step (4)'> Laser irradiation

[0183] The third laminate produced by the method of step (3) was irradiated with ultraviolet laser light from the second substrate side using a laser device (manufactured by Toray Engineering). After the entire surface of the second substrate was irradiated with the laser, the second substrate was separated from the third laminate to obtain the target laminate (laminate 4).

[0184] <Third embodiment>

[0185] <Process (1)>

[0186] (1)"-1 Preparation of the first stack

[0187] A varnish of a resin composition for forming a film of a resin composition containing a curable resin was applied to a 6-inch quartz glass substrate having a thickness of 0.7 mm (manufactured by Corning, with an absorbance of 0.01 at 355 nm at a thickness of 0.7 mm. First substrate) using a spinner, and dried at 120°C for 3 minutes using a hot plate to prepare a first laminate having a film formed by an uncured resin composition containing a curable resin laminated thereon.

[0188] The thickness of the uncured resin film was measured using an optical film thickness meter (Dainippon Screen Co., Ltd., Lambda Ace, refractive index = 1.543). The refractive index used can be selected according to the type of resin to improve measurement accuracy.

[0189] (1)"-2 Preparation of the second laminate

[0190] A 4-inch LED substrate (with alignment marks) was prepared as the second stack. The LEDs mounted thereon were as follows. The dimensions of the semiconductor element, the dimensions of the protruding electrode portion, and the distance between adjacent elements were measured using a scanning electron microscope (S-4800, manufactured by Hitachi High-Technologies).

[0191] Substrate with UV transparency (second substrate): sapphire substrate (thickness 0.8 mm)

[0192] Type of semiconductor element: GaN

[0193] Semiconductor device dimensions: Width 20.2 μm × Length 30.3 μm × Height 9.4 μm (including the height of the protruding electrode)

[0194] Number of protruding electrodes: Two on one surface

[0195] Dimensions of the protruding electrode: 17.5 μm × 11.0 μm × 3.4 μm

[0196] Metal type of protruding electrode: Au

[0197] Distance between adjacent components: 10.0 μm in width and length

[0198] <Step (2)> Formation and curing of the third laminate

[0199] The temperature of the carrier plate and the upper surface pressing plate of a vacuum press apparatus (manufactured by Mikado Technos, VS08-φ300) was set to 80°C, and the first laminate prepared by the method of the above-mentioned <step (1)> (1)-1 was placed on the carrier plate of the vacuum press apparatus in such a manner that the film of the uncured resin composition was exposed on the surface. The second laminate prepared by the above-mentioned <step (1)> (1)-2 was then superimposed thereon in such a manner that the protruding electrode portion of the second laminate was in contact with the film of the uncured resin composition provided on the first laminate. At this time, the positions were aligned so that the center of the facing surface of the first laminate and the center of the surface of the second laminate were aligned. Thereafter, the entire surface of the first substrate and the second substrate was pressurized at 1.5 kN for 2 minutes. While maintaining the pressure, the temperature of the carrier plate and the upper surface pressing plate was raised to 250°C. After reaching 250°C, the temperature was maintained for 10 minutes, and then the pressure was released, thereby heat-curing the film of the resin composition.

[0200] <Step (4)> Laser irradiation

[0201] The third stack produced by the method of the above-mentioned "step (2)" is irradiated with ultraviolet laser light from the side of the second substrate using a laser device (manufactured by Toray Engineering). After the entire surface of the second substrate is irradiated with the laser, the second substrate is separated from the third stack to obtain the target stack (stack 4).

[0202] (5) Measurement of absorbance of cured resin film

[0203] A first laminate for absorbance measurement was prepared by applying a film of an uncured resin composition containing a curable resin to a thickness of 0.5 μm to 1.5 μm using the same method as in the above-mentioned <Step (1)> (1)-1. The first laminate for absorbance measurement was heat-cured at 250°C in an atmospheric environment for 30 minutes using an inert oven (manufactured by Koyo). The thickness of the heat-cured resin film was measured using an optical film thickness meter (manufactured by Dainippon Screen, Lambda Ace, refractive index = 1.543). Furthermore, the absorbance of the heat-cured resin film was continuously measured from 200 nm to 400 nm using an ultraviolet-visible spectrophotometer (manufactured by Hitachi, Ltd., U-2910). The absorbance at wavelengths of 248 nm, 266 nm, 308 nm, and 355 nm was read therefrom, and the absorbance per 1.0 μm of film thickness at each wavelength was determined according to the following formula.

[0204] Absorbance per 1.0 μm = absorbance (-) / film thickness of sample (μm).

[0205] Furthermore, in measuring the film thickness of a heat-cured resin film using an optical film thickness meter, the refractive index used can be selected according to the type of resin in order to improve the accuracy of the measurement.

[0206] (6) Evaluation of loading yield

[0207] The mounting yield of the semiconductor elements mounted on the stack 4 obtained by the <First Embodiment> is calculated as follows: using a digital microscope (manufactured by KEYENCE, VHS-6000) to observe and photograph the surface of the stack 4 on which the semiconductor elements are mounted, the area that should contain 5000 semiconductor elements calculated based on the size and spacing of the semiconductor elements, counting the number of semiconductor elements actually mounted therein, and calculating the ratio relative to 5000.

[0208] In addition, regarding the mounting yield of semiconductor elements mounted on the stack 4 obtained in the <Second Embodiment> and the <Third Embodiment>, a digital microscope (manufactured by KEYENCE, VHS-6000) was used to observe and photograph three locations, namely the center of the stack 4 and two locations 4.8 cm away from the center, an area that should contain 5,000 semiconductor elements calculated based on the size and spacing of the semiconductor elements. The number of semiconductor elements actually mounted in each observation area was counted, and the ratio relative to 5,000 was calculated, and the average value of the calculation results obtained at the three locations was obtained.

[0209] (7) Evaluation of the presence or absence of unit formation between the resin film and the semiconductor element

[0210] Regarding whether the semiconductor elements mounted on the stack 4 and the resin film fixing the semiconductor elements are divided into units, among the semiconductor elements mounted on the stack 4, taking any semiconductor element as a reference, the height profile of the surface is obtained by a laser microscope within a range including all elements adjacent to the element, and the area between the semiconductor elements where the height difference with the reference element is the smallest is cut out by focused ion beam (FIB) processing. Based on the observation image obtained using a field emission scanning electron microscope (FE-SEM, manufactured by FEI, Helios G4-CX), it is determined whether there is a cured resin film between the semiconductor elements. In addition, when cutting out the cross section, for the purpose of protecting the shape of the cross section, such as Figure 2 As shown, a platinum film was formed by vapor deposition on the surface of the stack 4. The above evaluation was performed on any ten elements mounted on the stack 4. If at least one element had residual cured resin film or a portion where the resin film to which the reference semiconductor element was fixed was connected to the resin film to which the adjacent semiconductor element was fixed, the unit was marked "×". If no cured resin film remained in all ten elements or the resin film to which the reference semiconductor element was fixed was not connected to the resin film to which the adjacent semiconductor element was fixed, the unit was marked "○".

[0211] (8) Determination of indentation elastic modulus

[0212] The elastic modulus was measured using a nanoindenter (Triboindenter TI950, manufactured by Hysitron).

[0213] A dicing tape (UDT-1025MC manufactured by Denka) was attached to the semiconductor element side of the laminate 4 , and the semiconductor element was peeled off to expose the cured resin film to prepare a sample. The sample was then cut into a size of approximately 10 mm×10 mm.

[0214] The prepared sample is fixed to a dedicated sample fixing table via an adhesive (manufactured by Toagosei, Aron Alpha Fast-Acting Multipurpose), and the indentation elastic modulus is measured by an indentation load / unloading test. In the test, a Berkovich indenter (triangular pyramid diamond indenter) is used to press from the surface of the resin film to the first substrate side and then unload. The measurement site is set to the part where the semiconductor element is peeled off and the film thickness is the thickest in the remaining resin film. The film thickness is measured by a laser microscope or a step difference meter. The measurement conditions of the elastic modulus are shown below.

[0215] [Measurement conditions]

[0216] Measurement environment: 25℃±2℃, atmospheric pressure

[0217] Measuring frequency: 100Hz

[0218] Measurement method: Continuous rigidity measurement method

[0219] From the obtained load-indentation depth graph, the elastic modulus was calculated as the average value of the values ​​at a depth of 20 nm to 40 nm from the resin film surface.

[0220] (9) Measurement of the Embedment Depth of the Protruding Electrode Portion into the Resin Film in the Third Laminated Body After Heat Curing

[0221] The cross-section of the semiconductor element mounting portion of the third stack was cut out by focused ion beam (FIB) processing, and the depth of embedment of the protruding electrode portion into the resin film was measured based on the observation image obtained using a field emission scanning electron microscope (FE-SEM, manufactured by FEI, Helios G4-CX).

[0222] (10) Measurement of the bonding strength between semiconductor elements and cured resin films

[0223] The bond strength between the semiconductor element and the resin film was measured using a die shear tester (Dage 4000, manufactured by Nordson DAGE). Furthermore, the semiconductor element was removed from the laminate 4 and thinned. A sample was prepared in which no semiconductor element was present within 200 μm of the semiconductor element being measured. The test was performed on ten semiconductor elements, and the average value was calculated. The measurement conditions are shown below.

[0224] [Measurement conditions]

[0225] Measurement environment: 25℃±2℃, atmospheric pressure

[0226] Ink cartridge: BS250

[0227] Test speed: 15μm / s

[0228] Shear height: 4μm

[0229] Test load: 235mN

[0230] Cutting tool width: 100μm

[0231] (11) The shortest distance between the protruding electrode portion and the first substrate

[0232] The cross section of the semiconductor element mounting portion of the laminate 4 was cut out by focused ion beam (FIB) processing, and the thickness of the resin film between the lowermost portion of the protruding electrode portion and the first substrate was measured based on the observation image obtained using a field emission scanning electron microscope (FE-SEM, manufactured by FEI, Helios G4-CX). In addition, when cutting out the cross section, in order to protect the shape of the cross section, such as Figure 2 As shown, a platinum film is formed on the surface of the stacked body 4 by vapor deposition.

[0233] (12) Calculate the ratio of semiconductor elements with positional displacement on the stack 4

[0234] An observation image of the entire surface of the stack 4 is obtained using an optical microscope. For five randomly selected locations in an area of ​​10 × 10 semiconductor elements, the number of semiconductor elements in a state where the distance between adjacent semiconductor elements is shorter than the distance between adjacent semiconductor elements in the state of the second stack is counted, the average value is calculated, and the proportion of semiconductor elements with positional displacement on the stack 4 is calculated.

[0235] (13) Measurement of the depth of the protruding electrode portion embedded in the resin film

[0236] The cross section of the semiconductor element mounting portion of the laminate 4 was cut out by focused ion beam (FIB) processing, and the depth of the protruding electrode portion embedded in the resin film was measured based on the observation image obtained using a field emission scanning electron microscope (FE-SEM, manufactured by FEI, Helios G4-CX). In addition, when cutting out the cross section, in order to protect the shape of the cross section, the depth of the protruding electrode portion embedded in the resin film was measured. Figure 2 As shown, a platinum film is formed on the surface of the stacked body 4 by vapor deposition.

[0237] (14) Laser transfer test of semiconductor components

[0238] (14)-1 Preparation of a substrate (third substrate) onto which a semiconductor element is transferred

[0239] A 4-inch alkali-free glass substrate (Eagle XG, manufactured by Corning) with alignment marks and a thickness of 0.5 mm was coated with a spinner. A dilution of polydimethylsiloxane diluted with toluene to a weight ratio of 1:3 was applied. The solution was then heat-cured at 120°C for 3 minutes on a hot plate to form an adhesive layer on the glass substrate. The thickness of the adhesive layer after heat curing was measured using an optical film thickness meter (Lambda Ace, manufactured by Dainippon Screen, refractive index = 1.543). A substrate with an adhesive layer thickness of 5.0 μm was produced (hereinafter referred to as "Substrate 3").

[0240] (14)-2 Laser transfer of semiconductor components

[0241] A laser source (HOYA, HSL-5500IIIST), laminate 4, and substrate 3 were placed in this order. The surface of the protruding electrode portion of laminate 4 and the surface of substrate 3 with the adhesive layer formed thereon were held face to face, with a gap of 50 μm between the resin film surface of laminate 4 and the adhesive layer surface. The laser spot size was a 30 μm × 40 μm square. The positions of the laser source and laminate 4 were adjusted so that the center of a semiconductor element was located at the center of the laser spot, preventing the laser from irradiating adjacent semiconductor elements.

[0242] Laser transfer was performed at a predetermined energy density, and transfer tests were conducted on ten semiconductor devices at each energy density.

[0243] (14)-3 Evaluation of transfer performance

[0244] After laser irradiation, substrate 3 was observed and the number of semiconductor elements that could be transferred to substrate 3 without being inverted or rotated was measured. Ten semiconductor elements were transferred, and the number was set to "5"; seven to nine semiconductor elements were transferred, and the number was set to "4"; four to six semiconductor elements were transferred, and the number was set to "3"; one to three semiconductor elements were transferred, and the number was set to "2"; and no semiconductor elements were transferred, and the number was set to "1".

[0245] (14)-4 Evaluation of Position Accuracy

[0246] Using a CCD camera coaxially positioned with the laser light source, an image of the semiconductor element on the stack 4 before transfer and an image of the semiconductor element on the substrate 3 after transfer are captured. The center coordinates of the semiconductor element in each captured image are used to calculate the center positional offset of the semiconductor element before and after transfer. For each element that can be transferred to the substrate 3, the positional offset is calculated using the aforementioned method, and the positional accuracy is determined based on the average value as follows. A positional offset of 0 μm or greater but less than 2 μm is assigned a value of "5," a positional offset of 2 μm or greater but less than 3 μm is assigned a value of "4," a positional offset of 3 μm or greater but less than 4 μm is assigned a value of "3," a positional offset of 4 μm or greater but less than 5 μm is assigned a value of "2," and a positional offset of 5 μm or greater is assigned a value of "1."

[0247] (14)-5 Evaluation of the light spot position margin

[0248] Laser transfer was performed using the same method as in (14)-2, except that the center of the laser spot was offset by 3 μm in both the X-axis and Y-axis directions from the center of the semiconductor element. The number of adjacent elements that were also transferred was counted. Among ten elements, the number of elements that were not transferred was set as "5", the number of elements that were transferred was set as "4", the number of elements that were transferred was set as "3", the number of elements that were transferred was set as "7 to 9", and the number of elements that were transferred was set as "1".

[0249] The abbreviated names of the acid dianhydrides, diamines, additives, and solvents shown in the following production examples are as follows.

[0250] PMDA: pyromellitic anhydride (manufactured by Daicel)

[0251] BPDA: 3,3',4,4'-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Co., Ltd.)

[0252] BTDA: 3,3',4,4'-Benzophenone tetracarboxylic anhydride (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)

[0253] DIBOC: Di-tert-butyl dicarbonate (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0254] PA: Phthalic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0255] PDA: p-phenylenediamine (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0256] BAHF: 4,4'-dihydroxy-3,3'-diaminophenylhexafluoropropane (Merck Co., Ltd.)

[0257] APPS1: α,ω-bis(3-aminopropyl)polydimethylsiloxane represented by the structure of formula (1) (amine equivalent: 430 g / mol) (manufactured by Shin-Etsu Chemical Co., Ltd.)

[0258] (Formula (1))

[0259] [Chemistry 1]

[0260]

[0261] (In formula (1), m represents the number of repetitions)

[0262] APPS2: α,ω-bis(3-aminopropyl)polydimethylsiloxane represented by the structure of formula (2) (amine equivalent: 800 g / mol) (manufactured by Shin-Etsu Chemical Co., Ltd.)

[0263] (Formula (2))

[0264] [Chemistry 2]

[0265]

[0266] (In formula (2), n represents the number of repetitions)

[0267] NMP: 2-methyl-1-pyrrolidone (manufactured by Mitsubishi Chemical Corporation)

[0268] CHN: Cyclohexanone (manufactured by Toyo Gosei Kogyo Co., Ltd.)

[0269] DMIB: N,N-dimethylisobutylamide

[0270] Tinuvin 477: Hydroxyphenyltriazine-based UV absorber (manufactured by BASF)

[0271] TG-129: γ-butyrolactone solution containing 19.9% ​​by weight of a crosslinking agent having an alkoxymethyl group represented by the structure of formula (3) (manufactured by Sanwa Chemical Co., Ltd.)

[0272] [Chemistry 3]

[0273]

[0274] Production Example 1 (Curable Resin: P-1)

[0275] In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating / cooling device using hot / cooled water, and a stirring device, 233.92 g (0.27 mol) of APPS1, 26.35 g (0.017 mol) of APPS2, and 18.68 g (0.051 mol) of BAHF were placed along with 189.5 g of CHN. After stirring at 50°C for 15 minutes to dissolve them, 10.07 g (0.068 mol) of PA and 23.69 g of CHN were added, and the mixture was stirred at 60°C for 15 minutes. Subsequently, 66.37 g (0.30 mol) of PMDA and 23.69 g of CHN were added, and the mixture was stirred at 95°C for 1 hour. The temperature was then raised to 150°C and reacted for 4 hours to obtain a solution of polyimidesiloxane P-1 having a solids content of 65.0% by weight.

[0276] Production Example 2 (Curing Resin: P-2)

[0277] In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating / cooling device using hot / cooled water, and a stirring device, 233.92 g (0.27 mol) of APPS1, 26.35 g (0.017 mol) of APPS2, and 18.68 g (0.051 mol) of BAHF were placed along with 204.15 g of CHN. After stirring at 50°C for 15 minutes to dissolve the mixture, 10.07 g (0.068 mol) of PA and 25.52 g of CHN were added, followed by stirring at 60°C for 15 minutes. Subsequently, 48.75 g (0.15 mol) of BTDA, 45.01 g (0.15 mol) of BPDA, and 25.52 g of CHN were added, and the mixture was stirred at 95°C for 1 hour. The mixture was then heated to 150°C and reacted for 4 hours to obtain a solution of polyimidesiloxane P-2 having a solids content of 61.9% by weight.

[0278] Production Example 3 (Curing Resin: P-3)

[0279] In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating / cooling device using hot / cooled water, and a stirring device, 233.92 g (0.27 mol) of APPS1, 26.35 g (0.017 mol) of APPS2, and 18.68 g (0.051 mol) of BAHF were placed along with 204.33 g of CHN. After stirring at 50°C for 15 minutes to dissolve the mixture, 2.01 g (0.014 mol) of PA and 25.54 g of CHN were added, followed by stirring at 60°C for 15 minutes. Subsequently, 53.14 g (0.17 mol) of BTDA, 49.01 g (0.17 mol) of BPDA, and 25.54 g of CHN were added, and the mixture was stirred at 95°C for 1 hour. The mixture was then heated to 150°C and reacted for 4 hours to obtain a solution of polyimidesiloxane P-3 having a solids content of 62.9% by weight.

[0280] Production Example 4 (Curing Resin: P-4)

[0281] In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating / cooling device using hot / cooled water, and a stirring device, 204.68 g (0.24 mol) of APPS1, 26.35 g (0.017 mol) of APPS2, and 31.13 g (0.085 mol) of BAHF were placed along with 195.37 g of CHN. After stirring at 50°C for 15 minutes to dissolve the mixture, 2.01 g (0.014 mol) of PA and 24.42 g of CHN were added, followed by stirring at 60°C for 15 minutes. Subsequently, 53.14 g (0.17 mol) of BTDA, 49.01 g (0.17 mol) of BPDA, and 24.42 g of CHN were added, and the mixture was stirred at 95°C for 1 hour. The mixture was then heated to 150°C and reacted for 4 hours to obtain a solution of polyimidesiloxane P-4 having a solids content of 62.5% by weight.

[0282] Production Example 5 (Curing Resin: P-5)

[0283] In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating / cooling device using hot / cooled water, and a stirring device, 233.92 g (0.27 mol) of APPS1, 26.35 g (0.017 mol) of APPS2, and 18.68 g (0.051 mol) of BAHF were placed along with 203.26 g of CHN. After stirring at 50°C for 15 minutes to dissolve them, 2.01 g (0.014 mol) of PA and 25.41 g of CHN were added, and the mixture was stirred at 60°C for 15 minutes. Subsequently, 30.13 g (0.094 mol) of BTDA, 70.02 g (0.24 mol) of BPDA, and 25.41 g of CHN were added, and the mixture was stirred at 95°C for 1 hour. The mixture was then heated to 150°C and reacted for 4 hours to obtain a solution of polyimidesiloxane P-5 having a solids content of 63.0% by weight.

[0284] Production Example 6 (Curable Resin: P-6)

[0285] In a reaction kettle equipped with a thermometer, a dry nitrogen inlet, a heating / cooling device using warm / cooled water, and a stirring device, 11.79 g (0.109 mol) of PDA and 195.8 g of DMIB were placed together and dissolved. A solution of 0.48 g (2.19 mmol) of DIBOC and 26.1 g of DMIB was added dropwise while stirring, and the mixture was stirred at 40°C for 1 hour. Next, 12.87 g (0.437 mol) of BPDA and 13.05 g of DMIB were added, and the mixture was stirred at 60°C for 30 minutes. Subsequently, 13.83 g (0.063 mol) of PMDA and 13.05 g of DMIB were added, and the mixture was stirred at 60°C for 4 hours to obtain a solution of polyimide precursor P-6 with a solid content of 13.0% by weight.

[0286] Examples 1 to 24, Comparative Examples 1 to 3

[0287] The additives and solvents described in Table 1 were mixed and stirred with the resin solutions obtained in Production Examples 1 to 6 to prepare varnishes for resin films. The varnishes were filtered using a polytetrafluoroethylene (PTFE) filter with a pore size of 0.1 μm. Using these varnishes, a first laminate was prepared using the method described in the <Process (1)> (1)-1. In addition, each process was carried out as described in <Process (1)> (1)-2 to <Process (4)>. The detailed conditions and evaluation results of each process are summarized in Tables 2 to 4. In addition, in Comparative Example 1, heat curing in <Process (3)> was not performed, and in Comparative Example 2, heat curing was performed at 250°C for 30 minutes in the <Process (1)> (1)-1, and heat curing in <Process (3)> was not performed.

[0288] Example 25

[0289] Varnish 7 described in Table 1 was prepared and filtered using a PTFE filter with a pore size of 0.1 μm. Using the varnish, a first laminate was produced by the method described in <Process (1)'> (1)-1. Furthermore, a second laminate was produced by the method described in <Process (1)'> (1)-2. In addition, each process was carried out as in <Process (2)'> to <Process (4)'>. The detailed conditions and evaluation results in each process are summarized in Tables 5 to 7.

[0290] Example 26, Example 27

[0291] Varnish 7 described in Table 1 was prepared and filtered using a PTFE filter with a pore size of 0.1 μm. Using the varnish, a first stack was produced by the method described in <Process (1)> (1)-1. Furthermore, a second stack was produced by the method described in <Process (1)> (1)-2. In addition, each process was performed as in <Process (2)> to <Process (4)>. The detailed conditions and evaluation results of each process are summarized in Tables 5 to 7. By curing the resin film in the third stack while applying pressure, peeling at the interface between the resin film during curing and the semiconductor element caused by warping of the substrate can be suppressed compared to Example 25 in which pressurization and curing are performed in stages, resulting in an improvement in the mounting yield of the semiconductor element.

[0292]

[0293]

[0294]

[0295]

[0296]

[0297]

[0298]

[0299]

[0300]

[0301]

[0302] [Table 6-1]

[0303] Table 6

[0304]

[0305] [Table 6-2] Table 6 (continued)

[0306]

[0307] [Table 7]

[0308] Table 7

[0309]

[0310] Explanation of Figure Numbers

[0311] 11: Semiconductor layer of semiconductor element

[0312] 12: Protruding electrode portion of a semiconductor element

[0313] 13: Cured film of resin composition containing curable resin

[0314] 14: First substrate

[0315] 15: Platinum vapor deposition film

[0316] 21: The third substrate

[0317] 31: Laser irradiation device

[0318] 120: Laminated body 4

[0319] H a : The uppermost part where the protruding electrode part contacts the resin film

[0320] H b : The bottom part where the protruding electrode part contacts the resin film

[0321] H ab :H a With H b Height between

Claims

1. A method for producing a transfer laminate, comprising: (1) preparing a first laminate and a second laminate, wherein the first laminate is formed by laminating a resin composition containing a curable resin in a film-like, uncured state on a first light-transmitting substrate, The second stacked body is formed by arranging a plurality of semiconductor elements having at least one protruding electrode portion on a second substrate having ultraviolet light transparency so that the protruding electrode portion protrudes toward a side opposite to a surface of the second substrate; (2) a step of laminating the first laminate and the second laminate so that the surface on which the resin composition containing the curable resin is formed into a film faces the surface on which the semiconductor element is disposed, thereby obtaining a third laminate; (3) a step of curing the resin composition containing the curable resin contained in the third laminate to form a cured resin film; as well as (4) A process of irradiating the second substrate of the third stack with ultraviolet laser light from the side thereof to separate the second substrate from the third stack at the interface between the second substrate and the semiconductor element, and removing at least a portion of the cured resin film between the semiconductor elements.

2. The method for manufacturing a transfer laminate according to claim 1, wherein in the step (4), the cured resin film between adjacent semiconductor elements is removed by ultraviolet laser to divide the assembly into units (areas) of individual semiconductor elements and the cured resin film.

3. The method for manufacturing a transfer laminate according to claim 1 or 2, wherein the indentation elastic modulus of the curable resin in the first laminate at a depth of 20 nm to 40 nm from the resin film surface at 25°C from the resin film side when the curable resin is cured is greater than or equal to 1.0 GPa and less than or equal to 7.0 GPa.

4. The method for producing a transfer laminate according to claim 1 or 2, wherein the step (2) is performed so that after the step (3), the cured resin composition is in contact with the entire surface of the protruding electrode portion. The method for producing a transfer laminate according to claim 1 or 2, wherein the absorbance of the cured resin film at any wavelength of 200 nm to 380 nm when converted to a film thickness of 1.0 μm is 0.4 or more and 5.0 or less. 6 . The method for producing a transfer laminate according to claim 1 , wherein the thickness of the resin composition containing the curable resin in the first laminate is 0.3 μm or more and 3.0 μm or less.

7. The method for producing a transfer laminate according to claim 1 or 2, wherein In the step (3), the resin composition in the third laminate is cured while applying pressure from the first substrate side or the second substrate side.

8. The method for producing a transfer laminate according to claim 1 or 2, wherein in the step (4), the absorbance of the cured resin film at the wavelength of the ultraviolet laser light when converted to a film thickness of 1.0 μm is set to X, and the energy density of the ultraviolet laser light is set to Y mJ / cm 2 When , the product of X and Y is 400 or more and 7,000 or less.

9. A transfer laminate for transferring a semiconductor element to another substrate, wherein: On the stacked substrate (A) having light transmittance (first substrate), (B) on a substrate with a cured film formed by curing a resin composition containing a curable resin, (C) Multiple semiconductor elements having protruding electrode portions The protruding electrode portion is bonded to the cured film in a state where the depth of the protruding electrode portion embedded in the cured film matches the height of the protruding electrode portion. Furthermore, the plurality of semiconductor elements are not connected to adjacent semiconductor elements via a cured film, and the shortest distance between the protruding electrode portion and the first substrate is 0.1 μm to 1.0 μm. 10 . The transfer laminate according to claim 9 , wherein the adhesive strength between the semiconductor element and a cured film after curing the resin composition (B) containing a curable resin is 5 mN or more and 30 mN or less.

11. The transfer laminate according to claim 9 or 10, wherein the cured film of the resin composition (B) containing a curable resin after curing has an indentation elastic modulus of 1.0 GPa to 7.0 GPa at a depth of 20 nm to 40 nm from the resin film surface at 25°C. 12 . The transfer laminate according to claim 9 , wherein the cured film formed after curing the resin composition containing the curable resin (B) comprises polyimidesiloxane.

13. A method for manufacturing a semiconductor device, comprising: using a transfer stack manufactured by the method for manufacturing a transfer stack as described in claim 1 or 2 to manufacture a semiconductor device, the method comprising: a step of making the surface of the transfer stack on one side where the semiconductor element is provided face a third substrate for mounting the semiconductor element; and a step of subsequently irradiating the transfer stack from the side of the first substrate to remove the resin film after the resin composition containing the curable resin is cured, and transferring the semiconductor element to the third substrate.

14. A method for manufacturing a semiconductor device, comprising: using the transfer stack according to claim 9 or 10 to manufacture a semiconductor device, the method comprising: a step of making the surface of the transfer stack on the side where the semiconductor element is provided face a third substrate for mounting the semiconductor element; and a step of subsequently irradiating the transfer stack from the first substrate side with a laser to remove a cured film after curing of the resin composition containing the curable resin, and transferring the semiconductor element to the third substrate.

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