Semiconductor material in-situ high-temperature irradiation test method based on transmission electron microscope
Through the in-situ high-temperature irradiation test method based on transmission electron microscopy, the real-time observation problem of the microstructure changes of semiconductor materials under high-temperature irradiation conditions is solved, and the impact of high temperature and radiation coupling effect on the performance of semiconductor materials is achieved, providing high-precision and repeatability test results.
Patent Information
- Application Number
- CN202510720251.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-30
- Publication Date
- 2025-09-05
AI Technical Summary
Existing semiconductor materials irradiation research lacks in-situ high-temperature test methods, and it is difficult to observe the microstructure changes of radiation-induced defects in real time under high-temperature irradiation conditions.
The in-situ high-temperature irradiation test method of semiconductor materials based on transmission electron microscope is used, combined with transmission electron microscope and particle accelerator, real-time observation under the synergy of high temperature and radiation is achieved through the in-situ high temperature sample rod. The samples are prepared using a focused ion beam and the thickness is measured in combination with electron energy loss spectrometry or convergent beam diffraction method. The off-situ damage value is calculated in combination with Monte Carlo software simulation to optimize the irradiation parameters.
Real-time observation of the microstructure of semiconductor materials under high temperature irradiation conditions is achieved, dynamically capture the evolution process of radiation-induced defects, and provide direct experimental evidence to ensure high accuracy and repeatability of the experiment.
Smart Images
Figure CN120594562A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a high-temperature irradiation test method for semiconductor materials, and in particular to an in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope. Background Art
[0002] As the cornerstone of modern information technology, semiconductor materials play an irreplaceable role in electronic devices, optoelectronic systems, and energy conversion. With the expansion of semiconductor materials in extreme environments such as spacecraft, nuclear reactors, and high-energy physics devices, their stability issues in space radiation environments, nuclear radiation environments, and high-energy physics device radiation environments have become increasingly prominent. Irradiation damage can lead to problems such as lattice defects in semiconductor materials, decreased carrier lifetime, and device performance degradation, which directly affect system reliability. At the same time, high-temperature environments can significantly change the dynamics of radiation damage. For example, thermal activation effects may promote defect migration and recombination, but may also aggravate irreversible damage such as amorphization or interface failure. This makes it difficult for traditional room-temperature irradiation research on semiconductor materials to directly guide high-temperature application scenarios.
[0003] At the same time, ion irradiation technology itself plays a dual role in semiconductor manufacturing: on the one hand, ion implantation enables precise doping to control the electrical properties of semiconductor materials, such as ion irradiation in Si-based devices; on the other hand, irradiation-induced defect engineering can be used to optimize device structures, such as the use of ion irradiation to create junction termination structures in GaN devices to improve their withstand voltage performance. However, existing research on semiconductor material irradiation has largely focused on high-temperature annealing processes after room-temperature ion implantation, and further research is needed to better understand the defect evolution mechanisms and dynamic annealing effects of semiconductor materials under high-temperature ion implantation conditions.
[0004] Traditional high-temperature tests and irradiation tests are usually carried out separately. There is a lack of in-situ high-temperature irradiation test schemes for semiconductor materials, making it difficult to observe the irradiation-induced defect microstructural changes in semiconductor materials in real time under high-temperature irradiation conditions. Summary of the Invention
[0005] The purpose of the present invention is to solve the technical problem of the lack of an in-situ high-temperature irradiation test method for semiconductor materials, which makes it difficult to observe the microstructural changes of irradiation-induced defects in semiconductor materials in real time under high-temperature irradiation conditions, and to provide an in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope.
[0006] To achieve the above object, the technical solution adopted by the present invention is:
[0007] A method for in-situ high-temperature irradiation testing of semiconductor materials based on a transmission electron microscope is characterized in that it includes the following steps:
[0008] Step 1: Determine a test plan based on the semiconductor material to be tested and the test objectives, and determine the crystal orientation of the semiconductor material to be tested and select the positioning edge; the test plan includes setting the irradiation observation crystal plane, in-situ irradiation particles, in-situ irradiation temperature, observation mode, defect test method, total amount of off-site damage, off-site damage rate and ion beam intensity;
[0009] Step 2: Prepare a semiconductor material sample according to the crystal orientation and positioning edge of the semiconductor material to be measured, and install it into a high-temperature sample holder, and then insert the high-temperature sample holder into the transmission electron microscope;
[0010] Step 3, rotating the high-temperature sample rod, and recording the tilt angle of the high-temperature sample rod when the crystal plane of the semiconductor material sample is consistent with the irradiated observation crystal plane, which is recorded as the sample tilt angle;
[0011] Step 4: Based on the observation mode and defect testing method, the semiconductor material sample is tested and characterized using a transmission electron microscope at a sample tilt angle, and the thickness of the semiconductor material sample is measured to obtain the original test results;
[0012] Step 5: Raise the temperature of the high-temperature sample holder to the in-situ irradiation temperature, continuously observe and record the changing characteristics of the semiconductor material sample, then cool the high-temperature sample holder and remove it from the transmission electron microscope;
[0013] Step 6: simulate and calculate the off-site damage value of the semiconductor material to be tested under irradiation, and then calculate the current and time required for irradiation by combining the total amount of off-site damage and the off-site damage rate;
[0014] Step 7: Insert the beam test rod into the transmission electron microscope. Based on the irradiation current and time obtained in Step 6, use a particle accelerator to inject an ion beam corresponding to the in-situ irradiated particles into the transmission electron microscope. When the ion beam intensity measured by the beam test rod reaches the ion beam intensity threshold, stop the ion beam injection, record the particle accelerator status, and remove the beam test rod from the transmission electron microscope.
[0015] Step 8: Insert the high-temperature sample holder containing the semiconductor material sample into the transmission electron microscope again, adjust the tilt angle of the high-temperature sample holder to the sample tilt angle, and increase its temperature to the in-situ irradiation temperature;
[0016] Step 9: Based on the particle accelerator state obtained in step 7 and the irradiation current required in step 6, the particle accelerator is used to inject an ion beam corresponding to the in-situ irradiation particles into the transmission electron microscope. Then, according to the observation mode and defect testing method, the semiconductor material sample is irradiated and recorded in real time until the irradiation time required in step 6 is reached, thereby obtaining the in-situ high-temperature irradiation test results.
[0017] Step 10: Compare and analyze the original test results obtained in step 4 and the in-situ high-temperature irradiation test results obtained in step 9 to complete the in-situ high-temperature irradiation test of the semiconductor material.
[0018] Furthermore, step 3 is specifically as follows:
[0019] Rotate the high-temperature sample holder until the zone axis of the semiconductor material sample reaches the positive zone axis, and then determine the crystal plane of the semiconductor material sample through the diffraction spots. If the crystal plane of the semiconductor material sample is consistent with the irradiated observation crystal plane, record the tilt angle of the high-temperature sample holder at this time, which is recorded as the sample tilt angle;
[0020] Otherwise, according to the Kikuchi pole characteristics of the semiconductor material sample, it is rotated until the crystal plane is consistent with the irradiated observation crystal plane, and the tilt angle of the high-temperature sample rod at this time is recorded as the sample tilt angle.
[0021] Furthermore, step 5 is specifically as follows:
[0022] Raise the temperature of the high-temperature sample rod to the in-situ irradiation temperature and continuously observe the semiconductor material sample therein. If the semiconductor material sample does not change, remove the high-temperature sample rod after cooling down and proceed to step 6.
[0023] Otherwise, record the changing characteristics of the semiconductor material sample under the in-situ irradiation temperature and use them to determine whether the in-situ irradiation temperature needs to be lowered. If the in-situ irradiation temperature does not need to be lowered, remove the high-temperature sample rod after the temperature has cooled, and then re-prepare the semiconductor material sample according to the method of steps 2-4. Obtain the sample tilt angle and original test results, and proceed to step 6. If the in-situ irradiation temperature needs to be lowered, remove the high-temperature sample rod after the temperature has cooled, lower the in-situ irradiation temperature, and then return to step 2.
[0024] Furthermore, in step 6, SRIM or Geant4 software is used to simulate and calculate the off-situ damage value of the semiconductor material to be tested under the irradiation.
[0025] Furthermore, in step 4, the thickness of the semiconductor material sample is measured using electron energy loss spectroscopy or convergent beam diffraction.
[0026] Furthermore, in step 1, the semiconductor material to be tested is single crystal silicon, gallium arsenide, indium gallium arsenide, gallium nitride, silicon carbide, gallium oxide, aluminum nitride or crystal diamond;
[0027] The in-situ irradiation particles are H, He, N, Fe, Kr or Mg;
[0028] The in-situ irradiation temperature is 25°C to 800°C;
[0029] The observation modes include bright field, dark field, dual beam bright field and / or dual beam dark field;
[0030] The defect testing method includes continuous testing under the same observation mode and testing under multiple observation modes with different off-site damage values.
[0031] Furthermore, in step 2, a focused ion beam is used to prepare the semiconductor material sample.
[0032] Furthermore, in step 1, when the in-situ irradiation temperature is 25° C. to 500° C., the grid for the focused ion beam in step 2 is a copper grid;
[0033] In step 1, when the in-situ irradiation temperature is 500° C. to 800° C., the carrier grid of the focused ion beam in step 2 is a molybdenum mesh.
[0034] Furthermore, in step 2, the length of the semiconductor material sample is less than or equal to 10 μm, the width is less than or equal to 6 μm, and the thickness is less than or equal to 120 nm.
[0035] Furthermore, in step 9, the specific method of irradiating the semiconductor material sample and recording the video in real time is: selecting an observation area in the semiconductor material sample and marking it, then irradiating the semiconductor material sample and recording the observation area in real time.
[0036] Compared with the prior art, the present invention has the following beneficial effects:
[0037] 1. The transmission electron microscope-based in-situ high-temperature irradiation test method for semiconductor materials provided by the present invention combines a transmission electron microscope with a particle accelerator and utilizes an in-situ high-temperature sample holder to achieve real-time observation of the microstructural evolution of semiconductor materials under the synergistic effect of high temperature and irradiation. It can dynamically capture the evolution process of irradiation-induced defects and provide direct experimental evidence for studying the influence of the coupling effect of high temperature and irradiation on the performance of semiconductor materials.
[0038] 2. The present invention provides a transmission electron microscope-based in-situ high-temperature irradiation testing method for semiconductor materials. This method uses a focused ion beam to precisely prepare semiconductor material samples and combines electron energy loss spectroscopy or convergent beam diffraction to measure the thickness of the semiconductor material samples, ensuring high test accuracy and repeatability. Furthermore, Monte Carlo software is used to simulate and calculate ex-situ damage values, optimizing irradiation parameters and further improving test accuracy. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] Figure 1 is a flow chart of a method according to an embodiment of the present invention;
[0040] Figure 2 This is a graph showing the variation of the number of vacancies with depth obtained by the SRIM software in step 6 of an embodiment of the present invention;
[0041] Figure 3 Schematic diagram of test results under different off-site damage values obtained in an embodiment of the present invention, wherein the off-site damage value of (a) is 0, the off-site damage value of (b) is 0.21, the off-site damage value of (c) is 0.62, and the off-site damage value of (d) is 1.24. DETAILED DESCRIPTION
[0042] To make the objects, advantages and features of the present invention more clear, the in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope proposed by the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0043] A method for in-situ high-temperature irradiation testing of semiconductor materials based on transmission electron microscopy, such as Figure 1 As shown, the following steps are included:
[0044] Step 1. Determine the test plan based on the semiconductor material to be tested and the test objectives, and determine the crystal orientation of the semiconductor material to be tested and select the positioning edge. The test plan includes setting the irradiation observation crystal plane, in-situ irradiation particles, in-situ irradiation temperature, observation mode, defect test method, total off-site damage, off-site damage rate and ion beam intensity. Among them, the semiconductor material to be tested is single crystal silicon, gallium arsenide, indium gallium arsenide, gallium nitride, silicon carbide, gallium oxide, aluminum nitride or crystal diamond; the in-situ irradiation particles are H, He, N, Fe, Kr or Mg; the in-situ irradiation temperature is 25℃~800℃; the observation mode includes bright field, dark field, dual-beam bright field and / or dual-beam dark field; the defect test method includes continuous testing under the same observation mode and multiple observation mode tests under different off-site damage values.
[0045] In this embodiment, the semiconductor material to be tested is gallium nitride (GaN), the irradiated observation crystal plane is [2-1-1 0], the in-situ irradiated ions are self-interstitial ions N, the in-situ irradiation temperature is 800°C, the observation mode is double-beam bright field, the g vector is 0002, and the defect test method is continuous testing under the same observation mode.
[0046] Step 2: Prepare a GaN sample using a focused ion beam based on the crystal orientation and positioning edge of GaN, install it into a high-temperature sample holder, and then insert the high-temperature sample holder into a transmission electron microscope. When the in-situ irradiation temperature is 25°C to 500°C, a copper mesh is used as the carrier for the focused ion beam; when the in-situ irradiation temperature is 500°C to 800°C, a molybdenum mesh is used as the carrier for the focused ion beam. When using a focused ion beam for sample preparation, to minimize the impact of stress streaks generated during sample preparation and irradiation on the sample, in this embodiment, the semiconductor material sample is 8μm long and 6μm wide, the irradiation temperature is selected to be 800°C, and a molybdenum mesh is used as the carrier for the focused ion beam.
[0047] Step 3: Rotate the high-temperature sample rod and record the tilt angle of the high-temperature sample rod when the crystal plane of the GaN sample is consistent with the irradiated observation crystal plane, which is recorded as the sample tilt angle.
[0048] Rotate the high-temperature sample holder to adjust the GaN sample zone axis to the positive zone axis, and then determine the crystal plane of the GaN sample through the diffraction spots. If the crystal plane of the GaN sample is consistent with the irradiated and observed crystal plane, record the tilt angle of the high-temperature sample holder at this time and record it as the sample tilt angle. Otherwise, according to the Kikuchi pole characteristics of the GaN sample, rotate it until the crystal plane is consistent with the irradiated and observed crystal plane, and record the tilt angle of the high-temperature sample holder at this time and record it as the sample tilt angle.
[0049] Step 4: Adjust the transmission electron microscope mode according to the observation mode and defect testing method, and use the transmission electron microscope to test and characterize the GaN sample at the sample tilt angle. At the same time, measure the thickness of the GaN sample to obtain the original test results. The thickness of the GaN sample can be measured using electron energy loss spectroscopy or convergent beam diffraction. In this embodiment, the thickness of the GaN sample measured using convergent beam diffraction is 100 nm.
[0050] Step 5: Raise the temperature of the high-temperature sample holder to 490°C, and then raise it to 800°C after it stabilizes. Observe the changing characteristics of the GaN sample for 40 minutes. If no changes are observed in the GaN sample, remove the high-temperature sample holder after cooling down and proceed to step 6.
[0051] In other embodiments, if the semiconductor material sample changes, the change characteristics of the semiconductor material sample under the in-situ irradiation temperature are recorded and used to determine whether the in-situ irradiation temperature needs to be reduced. If the in-situ irradiation temperature does not need to be reduced, the high-temperature sample rod is removed after the temperature has cooled, and the semiconductor material sample is re-prepared according to the method of steps 2-4. The sample tilt angle and the original test results are obtained, and step 6 is executed. If the in-situ irradiation temperature needs to be reduced, the high-temperature sample rod is removed after the temperature has cooled, the in-situ irradiation temperature is reduced, and the process returns to step 2. Whether the in-situ irradiation temperature needs to be reduced is determined based on the degree of change in the semiconductor material sample. If the degree of change in the semiconductor material sample is minor, the in-situ irradiation temperature is appropriate, and in subsequent in-situ high-temperature irradiation tests, changes in the microstructure of the semiconductor material sample under the synergistic effects of high temperature and irradiation can be observed. If the degree of change in the semiconductor material sample is significant, the high temperature will cause abnormal changes in the microstructure and properties of the semiconductor material sample, resulting in data distortion, biased assessment of the synergistic effect of high temperature and irradiation, and reduced reliability and repeatability of the test. Therefore, it is necessary to reduce the in-situ irradiation temperature.
[0052] Step 6: Use SRIM or Geant4 software to simulate and calculate the off-site damage value of GaN under irradiation, and then calculate the current and time required for irradiation based on the total off-site damage and off-site damage rate. In this embodiment, SRIM software is used to obtain the following Figure 2 The graph of the number of vacancies changing with depth can be used according to Figure 2 The off-site damage value of GaN under irradiation was calculated.
[0053] Step 7: Insert the beam test rod into the transmission electron microscope. Based on the irradiation current and time obtained in step 6, use a particle accelerator to inject an ion beam corresponding to the in-situ irradiated particles into the transmission electron microscope. When the ion beam intensity measured by the beam test rod reaches the ion beam intensity threshold, stop the ion beam injection, record the particle accelerator status, and remove the beam test rod from the transmission electron microscope.
[0054] Step 8. Insert the high-temperature sample holder containing the GaN sample into the transmission electron microscope again. Adjust the transmission electron microscope mode according to the observation mode and defect test method to meet the dual-beam bright field and g vector of 0002. Adjust the tilt angle of the high-temperature sample holder to the sample tilt angle obtained in step 3. Then, raise the temperature of the high-temperature sample holder to 490°C, and then raise it to 800°C after it reaches stability.
[0055] Step 9: Select an observation area within the semiconductor material sample and adjust the transmission electron microscope to an appropriate magnification. Select the defect in the upper right corner of the observation area as a marker to mark the observation area to prevent sample drift after irradiation. Based on the particle accelerator status obtained in Step 7 and the irradiation current required in Step 6, use the particle accelerator to inject an ion beam corresponding to the in-situ irradiation particles into the transmission electron microscope. Irradiate the GaN sample and record the observation area in real time until the irradiation time required in Step 6 is reached. This results in the in-situ high-temperature irradiation test of the semiconductor material to be tested.
[0056] In this step, if the defect testing method uses continuous recording under the same observation mode, the particle accelerator does not need to be shut down during irradiation. If multiple observation modes are used at different off-site damage values, the particle accelerator needs to be shut down when the off-site damage value is reached. Continuous recording under the same mode has the advantage of allowing real-time observation of the defect's evolution, but has the disadvantage of only obtaining data from one mode in a single test. Multi-mode testing under different off-site damage values has the advantage of obtaining test data from different modes, but has the disadvantage of longer testing times.
[0057] Step 10: Compare and analyze the original test results obtained in step 4 and the in-situ high temperature irradiation test results obtained in step 9 to obtain the following: Figure 3The evolution images of defect density and size with irradiation dose shown in the figure complete the in-situ high-temperature irradiation test of semiconductor materials.
[0058] like Figure 3 As shown, the in-situ high-temperature irradiation testing method for semiconductor materials based on a transmission electron microscope (TEM) provided in this embodiment demonstrates the pattern of defect changes at the same location under the synergistic effect of high-temperature irradiation: as the irradiation fluence increases, the density of irradiation-induced defects first increases and then decreases, while the size of the defects continues to increase. This indicates that the in-situ high-temperature irradiation testing method for semiconductor materials based on a TEM provided in this embodiment can provide direct experimental evidence for studying the impact of the coupled effects of high temperature and irradiation on semiconductor material properties.
[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the present invention.
Claims
1. A method for in-situ high-temperature irradiation testing of semiconductor materials based on a transmission electron microscope, characterized in that: The following steps are involved: Step 1: Determine a test plan based on the semiconductor material to be tested and the test objectives, and determine the crystal orientation of the semiconductor material to be tested and select the positioning edge; the test plan includes setting the irradiation observation crystal plane, in-situ irradiation particles, in-situ irradiation temperature, observation mode, defect test method, total amount of off-site damage, off-site damage rate and ion beam intensity; Step 2: Prepare a semiconductor material sample according to the crystal orientation and positioning edge of the semiconductor material to be measured, and install it into a high-temperature sample holder, and then insert the high-temperature sample holder into the transmission electron microscope; Step 3, rotating the high-temperature sample rod, and recording the tilt angle of the high-temperature sample rod when the crystal plane of the semiconductor material sample is consistent with the irradiated observation crystal plane, which is recorded as the sample tilt angle; Step 4: Based on the observation mode and defect testing method, the semiconductor material sample is tested and characterized using a transmission electron microscope at a sample tilt angle, and the thickness of the semiconductor material sample is measured to obtain the original test results; Step 5: Raise the temperature of the high-temperature sample holder to the in-situ irradiation temperature, continuously observe and record the changing characteristics of the semiconductor material sample, then cool the high-temperature sample holder and remove it from the transmission electron microscope; Step 6: simulate and calculate the off-site damage value of the semiconductor material to be tested under irradiation, and then calculate the current and time required for irradiation by combining the total amount of off-site damage and the off-site damage rate; Step 7: Insert the beam test rod into the transmission electron microscope. Based on the irradiation current and time obtained in Step 6, use a particle accelerator to inject an ion beam corresponding to the in-situ irradiated particles into the transmission electron microscope. When the beam intensity measured by the beam test rod reaches the ion beam intensity set in Step 1, stop the ion beam injection, record the particle accelerator status, and remove the beam test rod from the transmission electron microscope. Step 8: Insert the high-temperature sample holder containing the semiconductor material sample into the transmission electron microscope again, adjust the tilt angle of the high-temperature sample holder to the sample tilt angle, and increase its temperature to the in-situ irradiation temperature; Step 9: Based on the particle accelerator state obtained in step 7 and the irradiation current required in step 6, the particle accelerator is used to inject an ion beam corresponding to the in-situ irradiation particles into the transmission electron microscope. Then, according to the observation mode and defect testing method, the semiconductor material sample is irradiated and recorded in real time until the irradiation time required in step 6 is reached, thereby obtaining the in-situ high-temperature irradiation test results. Step 10: Compare and analyze the original test results obtained in step 4 and the in-situ high-temperature irradiation test results obtained in step 9 to complete the in-situ high-temperature irradiation test of the semiconductor material.
2. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 1, characterized in that: Step 3 is as follows: Rotate the high-temperature sample holder until the zone axis of the semiconductor material sample reaches the positive zone axis, and then determine the crystal plane of the semiconductor material sample through the diffraction spots. If the crystal plane of the semiconductor material sample is consistent with the irradiated observation crystal plane, record the tilt angle of the high-temperature sample holder at this time, which is recorded as the sample tilt angle; Otherwise, according to the Kikuchi pole characteristics of the semiconductor material sample, it is rotated until the crystal plane is consistent with the irradiated observation crystal plane, and the tilt angle of the high-temperature sample rod at this time is recorded as the sample tilt angle.
3. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 1 or 2, characterized in that: Step 5 is as follows: Raise the temperature of the high-temperature sample rod to the in-situ irradiation temperature and continuously observe the semiconductor material sample therein. If the semiconductor material sample does not change, remove the high-temperature sample rod after cooling down and proceed to step 6. Otherwise, record the changing characteristics of the semiconductor material sample under the in-situ irradiation temperature and use them to determine whether the in-situ irradiation temperature needs to be lowered. If the in-situ irradiation temperature does not need to be lowered, remove the high-temperature sample rod after the temperature has cooled, and then re-prepare the semiconductor material sample according to the method of steps 2-4. Obtain the sample tilt angle and original test results, and proceed to step 6. If the in-situ irradiation temperature needs to be lowered, remove the high-temperature sample rod after the temperature has cooled, lower the in-situ irradiation temperature, and then return to step 2.
4. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 3, characterized in that: In step 6, SRIM or Geant4 software is used to simulate and calculate the off-situ damage value of the semiconductor material to be tested under the irradiation.
5. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 4, characterized in that: In step 4, the thickness of the semiconductor material sample is measured by electron energy loss spectroscopy or convergent beam diffraction.
6. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 5, characterized in that: In step 1, the semiconductor material to be tested is single crystal silicon, gallium arsenide, indium gallium arsenide, gallium nitride, silicon carbide, gallium oxide, aluminum nitride or crystal diamond; The in-situ irradiation particles are H, He, N, Fe, Kr or Mg; The in-situ irradiation temperature is 25°C to 800°C; The observation modes include bright field, dark field, dual beam bright field and / or dual beam dark field; The defect testing method includes continuous testing under the same observation mode and testing under multiple observation modes with different off-site damage values.
7. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 6, characterized in that: In step 2, the semiconductor material sample is prepared using a focused ion beam.
8. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 7, characterized in that: In step 1, when the in-situ irradiation temperature is 25° C. to 500° C., the grid for the focused ion beam in step 2 is a copper grid; In step 1, when the in-situ irradiation temperature is 500° C. to 800° C., the carrier grid of the focused ion beam in step 2 is a molybdenum mesh.
9. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 8, characterized in that: In step 2, the length of the semiconductor material sample is less than or equal to 10 μm, the width is less than or equal to 6 μm, and the thickness is less than or equal to 120 nm.
10. The in-situ high-temperature irradiation test method for semiconductor materials based on a transmission electron microscope according to claim 9, characterized in that: In step 9, the specific method of irradiating the semiconductor material sample and recording the video in real time is: An observation area is selected in a semiconductor material sample and marked, and then the semiconductor material sample is irradiated and the observation area is recorded in real time.