Display device manufacturing apparatus and display device manufacturing method

Abstract

The present invention relates to an apparatus for manufacturing a display device and a method for manufacturing a display device, and one embodiment of the present invention discloses an apparatus for manufacturing a display device, comprising: a first chamber in which a display substrate is loaded; the second chamber is communicated with the first chamber, and a first plasma is generated in the second chamber; a gas supply unit for supplying a first gas or a second gas to the second chamber; a plasma induction unit for applying a magnetic field to the second chamber using a first high-frequency power to generate the first plasma from the first gas to deposit or etch the display substrate; and a cleaning part for applying an electric field to the second chamber using a second high-frequency power to generate the second plasma from the second gas to clean an inner wall of the second chamber, the plasma inducing part and the cleaning part being selectively replaceable with each other.

Description

Technical Field

[0001] Embodiments of the present invention relate to a display device manufacturing apparatus and a display device manufacturing method, and more particularly, to a display device manufacturing apparatus and a display device manufacturing method capable of improving process efficiency and quality in a process utilizing plasma. Background Art

[0002] Electronic devices have recently been widely used. These devices are used in various ways, such as mobile and stationary electronic devices. These electronic devices include a display device that can provide visual information such as images or videos to users in order to support various functions.

[0003] Display devices are devices that visually display data and are formed by depositing multiple layers, such as organic, inorganic, and metallic layers. To form the multiple layers of a display device, deposition materials may be deposited. Furthermore, after forming the various layers, such as organic, inorganic, and metallic layers, the deposited layers may be etched for patterning. In this case, plasma can be used to perform the deposition and etching processes.

[0004] The aforementioned background technology is technical information held by the inventor in order to derive the present invention or obtained in the process of deriving the present invention. It cannot be said that it is necessarily public knowledge disclosed to the general public before the application of the present invention.

[0005] A chamber for generating plasma has a problem in which reaction byproducts adhere to and accumulate on the inner surface, thereby reducing the efficiency of plasma generation. Summary of the Invention

[0006] In order to solve various problems including the problems described above, an object of embodiments of the present invention is to provide a manufacturing apparatus and a manufacturing method of a display device, which can effectively generate plasma in a process using plasma.

[0007] However, such problems are merely illustrative, and the problems to be solved by the present invention are not limited thereto.

[0008] One embodiment of the present invention discloses a manufacturing device for a display device, comprising: a first chamber, wherein a display substrate is loaded inside the first chamber; a second chamber, connected to the first chamber, for generating a first plasma or a second plasma in the second chamber; a gas supply portion, for supplying the first gas or the second gas to the second chamber; a plasma inducing portion, for applying a magnetic field to the second chamber using a first high-frequency power to generate the first plasma from the first gas to perform deposition or etching on the display substrate; and a cleaning portion, for applying an electric field to the second chamber using a second high-frequency power to generate the second plasma from the second gas to clean the inner wall of the second chamber, wherein the plasma inducing portion and the cleaning portion are selectively replaceable with each other.

[0009] In one embodiment, the frequencies of the first high-frequency power and the second high-frequency power may be different from each other.

[0010] In one embodiment, the frequency of the first high-frequency power may be greater than or equal to 10 times and less than or equal to 15 times the frequency of the second high-frequency power.

[0011] In one embodiment, the frequency of the first high-frequency power may be greater than or equal to 10 MHz and less than or equal to 15 MHz.

[0012] In one embodiment, the frequency of the second high-frequency power may be greater than or equal to 0.1 MHz and less than or equal to 1 MHz.

[0013] In one embodiment, the plasma inducing portion may include: an antenna portion arranged in a solenoid coil shape so as to surround the second chamber; and a first power supply portion for supplying the first high-frequency power to the antenna portion.

[0014] In one embodiment, the plasma inducing portion may generate the first plasma in an inductive coupling manner.

[0015] In one embodiment, the second chamber may be configured to be in a tubular shape extending along a first direction, and the cleaning portion may include: an electrode portion configured to be in a cylindrical shape extending along the first direction so as to surround the second chamber; and a second power supply portion for supplying the second high-frequency power to the electrode portion.

[0016] In one embodiment, the electrode portion and the second chamber may be arranged in concentric circles in a plan view.

[0017] In one embodiment, a diameter of the electrode portion may be formed to be larger than a diameter of the second chamber.

[0018] In one embodiment, the electrode portion may include: a cylindrical first electrode portion; and a cylindrical second electrode portion arranged side by side with the first electrode portion in the first direction.

[0019] In one embodiment, the diameters of the first electrode portion and the second electrode portion may be different from each other.

[0020] In one embodiment, the lengths of the first electrode portion and the second electrode portion may be different from each other.

[0021] In one embodiment, a distance between the first electrode portion and the outer circumference of the second chamber and a distance between the second electrode portion and the outer circumference of the second chamber may be different.

[0022] In one embodiment, the cleaning portion may generate the second plasma in an electrostatic coupling manner.

[0023] Another embodiment of the present invention discloses a method for manufacturing a display device, comprising the steps of: preparing a display substrate in a first chamber; supplying a first gas to a second chamber connected to the first chamber; generating a first plasma from the first gas in the second chamber using a plasma induction section supplied with a first high-frequency power, and supplying the first plasma to the first chamber; depositing or etching the display substrate accommodated in the first chamber using the first plasma; supplying a second gas to the second chamber; and generating a second plasma from the second gas in the second chamber using a cleaning section supplied with a second high-frequency power to remove reaction byproducts from the inner wall of the second chamber.

[0024] In one embodiment, the plasma inducing portion or the cleaning portion may be selectively installed outside the second chamber.

[0025] In one embodiment, after removing the reaction byproducts from the inner wall of the second chamber, the method may further include supplying a purge gas into the second chamber to purge the reaction byproducts.

[0026] In one embodiment, the plasma inducing portion may include: an antenna portion arranged in a solenoid coil shape so as to surround the second chamber; and a first power supply portion for supplying the first high-frequency power to the antenna portion.

[0027] In one embodiment, the second chamber may be configured to be in a tubular shape extending along a first direction, and the cleaning portion may include: an electrode portion configured to be in a cylindrical shape extending along the first direction so as to surround the second chamber; and a second power supply portion for supplying the second high-frequency power to the electrode portion.

[0028] Other aspects, features, and advantages besides those described above will become apparent based on the detailed description, claims, and accompanying drawings.

[0029] According to the embodiments of the present invention, plasma can be more efficiently generated in a process using plasma, thereby increasing process efficiency.

[0030] Furthermore, by-products generated when plasma is used can be easily and efficiently removed.

[0031] The effects of the present invention are not limited to the effects mentioned above, and those skilled in the art will clearly understand other effects not mentioned based on the description of the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 FIG. 1 is a plan view schematically showing a display device according to an embodiment of the present invention.

[0033] Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention, which may correspond to the Figure 1 A cross section of the display device taken along line II-II'.

[0034] Figure 3 It is a cross-sectional view schematically showing an apparatus for manufacturing a display device according to an embodiment of the present invention. Figure 3 Schematically represents the process execution mode.

[0035] Figure 4 It is a cross-sectional view schematically showing an apparatus for manufacturing a display device according to an embodiment of the present invention. Figure 4 Schematically represents the cleaning mode.

[0036] Figure 5 and Figure 6 It is a cross-sectional view schematically showing an electrode portion according to one embodiment of the present invention.

[0037] Description of Reference Numerals

[0038] 1: Display device

[0039] 2: Display device manufacturing equipment

[0040] 10: First chamber

[0041] 20: Second chamber

[0042] 30: Workbench

[0043] 40: Plasma induction unit

[0044] 41: Antenna

[0045] 42: First Power Supply Department

[0046] 50: Cleaning Department

[0047] 51: Electrode

[0048] 52: Second power supply unit / power supply unit

[0049] 60: Purge gas supply unit

[0050] 70: Exhaust

[0051] 80: Gas supply unit DETAILED DESCRIPTION

[0052] The present invention is susceptible to various modifications and embodiments. Specific embodiments are schematically illustrated in the accompanying drawings and described in detail in the detailed description. The effects and features of the present invention, as well as methods for achieving them, will become apparent with reference to the accompanying drawings and the embodiments described in detail below. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

[0053] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the accompanying drawings, the same or corresponding structural elements are given the same reference numerals, and repeated description thereof will be omitted.

[0054] In the following embodiments, terms such as “first” and “second” are not used in a limiting sense, but are used for the purpose of distinguishing one structural element from another structural element.

[0055] In the following embodiments, regarding an expression in the singular, if it is not obvious that a different meaning is expressed in the context, the singular expression includes an expression in the plural.

[0056] In the following embodiments, terms such as “including” or “having” indicate the presence of features or structural elements described in the specification, and do not preclude the possibility of adding one or more other features or structural elements.

[0057] In the following embodiments, when a portion referred to as a film, region, structural element, etc. is located above or on another portion, it includes not only the case where it is directly above the other portion, but also the case where other films, regions, structural elements, etc. are present therebetween.

[0058] For the sake of convenience in explanation, the size of the structural elements may be exaggerated or reduced in the drawings. For example, for the sake of convenience in explanation, the size and thickness of each structure shown in the drawings are arbitrarily shown, and therefore the present invention is not necessarily limited to the contents of the drawings.

[0059] In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes on the rectangular coordinate system, and can be interpreted in a broad sense including this case. For example, the x-axis, y-axis, and z-axis can be orthogonal to each other, but can also refer to different directions that are not orthogonal to each other.

[0060] When a certain embodiment can be implemented in different ways, a specific process sequence can be performed in a different order than that described. For example, two processes described in succession can be performed substantially simultaneously or in a reverse order than that described.

[0061] Figure 1 FIG. 1 is a plan view schematically showing a display device according to an embodiment of the present invention.

[0062] Reference Figure 1 The display device 1 according to an embodiment of the present invention may include a display area DA and a peripheral area PA located outside the display area DA. The display device 1 may provide an image by forming an array of a plurality of pixels PX arranged two-dimensionally on the display area DA.

[0063] The peripheral area PA is a region that does not provide an image and may surround the display area DA in whole or in part. A driver, etc., may be provided in the peripheral area PA. The driver is used to provide electrical signals or power to the pixel circuits corresponding to each pixel PX. The peripheral area PA may also be provided with solder pads, which can be electrically connected to electronic components or a printed circuit board.

[0064] The following describes a case where the display device 1 includes an organic light emitting diode (OLED) as a light emitting element, but the display device 1 of the present invention is not limited to this. As another embodiment, the display device 1 may be a light emitting display device including an inorganic light emitting diode, i.e., an inorganic light emitting display device (ILD). The inorganic light emitting diode may include a PN junction diode, which contains a material based on an inorganic semiconductor. If a forward voltage is applied to the PN junction diode, the PN junction diode can be injected with holes and electrons, and emits light of a specified color by converting the energy generated by the recombination of the holes and electrons into light energy. The aforementioned inorganic light emitting diode may have a width of several microns to several hundred microns. In some embodiments, the inorganic light emitting diode may be referred to as a micro light emitting diode. In another embodiment, the display device 1 may be a quantum dot light emitting display device (QD).

[0065] The display device 1 can be used not only as a display screen for portable electronic devices such as mobile phones, smartphones, tablet personal computers, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation systems, ultra mobile personal computers (UMPCs), and notebook computers, but also as a display screen for a variety of products such as televisions, monitors, billboards, and Internet of Things (IoT) devices. Furthermore, the display device 1 of one embodiment can be used in wearable devices such as smart watches, watch phones, eyeglass displays, and head-mounted displays (HMDs). Furthermore, the display device 1 of one embodiment can be used as a dashboard in a car, a center information display (CID) installed in the center console or dashboard of a car, a room mirror display that replaces a car's side mirrors, and a display screen installed behind the front seats as a rear-seat entertainment device.

[0066] Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention, which may correspond to the Figure 1 A cross section of the display device taken along line II-II'.

[0067] Reference Figure 2 The display device 1 may include a stacked structure of a substrate 100 , a pixel circuit layer PCL, a display element layer DEL, and an encapsulation layer 300 .

[0068] The substrate 100 may be a multilayer structure including a base layer and an inorganic layer, wherein the base layer includes a polymer resin. For example, the substrate 100 may include a base layer including a polymer resin and a barrier layer serving as an inorganic insulating layer. For example, the substrate 100 may include a first base layer 101, a first barrier layer 102, a second base layer 103, and a second barrier layer 104 stacked in sequence. The first base layer 101 and the second base layer 103 may include polyimide (PI), polyethersulfone (PES), polyarylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polycarbonate (PC), cellulose triacetate (TAC), and / or cellulose acetate propionate (CAP), etc. The first barrier layer 102 and the second barrier layer 104 may include an inorganic insulator such as silicon oxide, silicon oxynitride, and / or silicon nitride. The substrate 100 may have a soft property.

[0069] A pixel circuit layer PCL is provided on the substrate 100. Figure 2 The pixel circuit layer PCL shown in the figure includes a transistor TFT, a buffer layer 111 provided below and / or above the structural elements of the transistor TFT, a first gate insulating layer 112, a second gate insulating layer 113, an interlayer insulating layer 114, a first planarization insulating layer 115 and a second planarization insulating layer 116.

[0070] The buffer layer 111 can reduce or block the penetration of impurities, moisture, or external air from the lower portion of the substrate 100 and can provide a flat surface on the substrate 100. The buffer layer 111 may include an inorganic insulator such as silicon oxide, silicon oxynitride, or silicon nitride, and may be formed in a single layer or multilayer structure including the foregoing materials.

[0071] The transistor TFT above the buffer layer 111 includes a semiconductor layer Act, which may include polycrystalline silicon. Alternatively, the semiconductor layer Act may include amorphous silicon, an oxide semiconductor, or an organic semiconductor. The semiconductor layer Act may include a channel region C and a drain region D and a source region S disposed on either side of the channel region C. The gate electrode GE may overlap the channel region C.

[0072] The gate electrode GE may include a low-resistance metal material, such as molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), and may be formed into a multi-layer or single-layer structure.

[0073] The first gate insulating layer 112 between the semiconductor layer Act and the gate electrode GE may include silicon oxide (SiO2), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) or zinc oxide (ZnO X ) and other inorganic insulating materials. Zinc oxide (ZnO X ) may be zinc oxide (ZnO) and / or zinc peroxide (ZnO2).

[0074] The second gate insulating layer 113 may be provided to cover the gate electrode GE. Similar to the first gate insulating layer 112, the second gate insulating layer 113 may include silicon oxide (SiO2), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) or zinc oxide (ZnO X ) and other inorganic insulating materials. Zinc oxide (ZnO X ) may be zinc oxide (ZnO) and / or zinc peroxide (ZnO2).

[0075] An upper electrode Cst2 of the storage capacitor Cst may be disposed above the second gate insulating layer 113. The upper electrode Cst2 may overlap the gate electrode GE thereunder. In this case, the gate electrode GE and the upper electrode Cst2, overlapping with the second gate insulating layer 113 interposed therebetween, may form a storage capacitor Cst. In other words, the gate electrode GE may function as the lower electrode Cst1 of the storage capacitor Cst.

[0076] In this way, the energy storage capacitor Cst and the transistor TFT can be formed to overlap. In some embodiments, the energy storage capacitor Cst can also be formed to not overlap with the transistor TFT.

[0077] The upper electrode Cst2 may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), and may be a single-layer or multi-layer structure of the aforementioned substances.

[0078] The interlayer insulating layer 114 may cover the upper electrode Cst2. The interlayer insulating layer 114 may include silicon oxide (SiO2), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) or zinc oxide (ZnO X ) etc. Zinc oxide (ZnO X ) may be zinc oxide (ZnO) and / or zinc peroxide (ZnO2). The interlayer insulating layer 114 may be a single layer or multilayer structure including the aforementioned inorganic insulating material.

[0079] The drain electrode DE and the source electrode SE may be located above the interlayer insulating layer 114, respectively. The drain electrode DE and the source electrode SE may be connected to the drain region D and the source region S, respectively, through contact holes formed in the insulating layer thereunder. The drain electrode DE and the source electrode SE may include a material with good electrical conductivity. The drain electrode DE and the source electrode SE may include a conductive substance including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed into a multilayer or single-layer structure including the above materials. As one embodiment, the drain electrode DE and the source electrode SE may have a multilayer structure of Ti / Al / Ti.

[0080] The first planarization insulating layer 115 may cover the drain electrode DE and the source electrode SE. The first planarization insulating layer 115 may include an organic insulator, such as a common general-purpose polymer such as polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, or a mixture thereof.

[0081] The second planarization insulating layer 116 may be disposed above the first planarization insulating layer 115. The second planarization insulating layer 116 may include the same material as the first planarization insulating layer 115, and may include an organic insulator, such as a common general-purpose polymer such as polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine-based polymer, a paraxylene polymer, a vinyl alcohol polymer, or a mixture thereof.

[0082] A display element layer DEL may be provided above the pixel circuit layer PCL of the aforementioned structure. The display element layer DEL may include an organic light-emitting diode (OLED) as a display element (i.e., a light-emitting element). The organic light-emitting diode OLED may include a stacked structure of a pixel electrode 210, an intermediate layer 220, and a common electrode 230. The organic light-emitting diode OLED may emit, for example, red, green, or blue light, or may emit red, green, blue, or white light. The organic light-emitting diode OLED may emit light through a light-emitting region, which may be defined as a pixel PX.

[0083] The pixel electrode 210 of the organic light emitting diode OLED may be electrically connected to the transistor TFT through a contact hole formed in the second planarization insulating layer 116 and the first planarization insulating layer 115 and a contact metal CM disposed on the first planarization insulating layer 115 .

[0084] The pixel electrode 210 may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). As another embodiment, the pixel electrode 210 may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. As another embodiment, the pixel electrode 210 may further include a film formed of ITO, IZO, ZnO, or In2O3 above or below the reflective film.

[0085] A pixel defining film 117 is disposed above the pixel electrode 210. The pixel defining film 117 has an opening 117OP that exposes the central portion of the pixel electrode 210. The pixel defining film 117 may include an organic insulator and / or an inorganic insulator. The opening 117OP may define a light-emitting region for light emitted by the organic light-emitting diode OLED. For example, the size / width of the opening 117OP may correspond to the size / width of the light-emitting region. Therefore, the size and / or width of the pixel PX may depend on the size and / or width of the opening 117OP of the corresponding pixel defining film 117.

[0086] The intermediate layer 220 may include a light emitting layer 222 formed to correspond to the pixel electrode 210. The light emitting layer 222 may include a high molecular weight or low molecular weight organic substance that emits light of a predetermined color. Alternatively, the light emitting layer 222 may include an inorganic light emitting substance or quantum dots.

[0087] As one embodiment, the intermediate layer 220 may include a first functional layer 221 and a second functional layer 223, respectively disposed below and above the light-emitting layer 222. The first functional layer 221 may include, for example, a hole transport layer (HTL), or may include a hole transport layer and a hole injection layer (HIL). The second functional layer 223 is a structural element disposed above the light-emitting layer 222 and may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The first functional layer 221 and / or the second functional layer 223 may be a common layer formed to fully cover the substrate 100, similar to the common electrode 230 described below.

[0088] The common electrode 230 may be disposed above the pixel electrode 210 and overlap with the pixel electrode 210. The common electrode 230 may be formed of a conductive material with a low work function. For example, the common electrode 230 may include a (semi) transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. Alternatively, the common electrode 230 may further include a layer such as ITO, IZO, ZnO, or In2O3 above the (semi) transparent layer containing the aforementioned substances. The common electrode 230 may be formed integrally in a manner that fully covers the substrate 100.

[0089] The encapsulation layer 300 may be disposed above the display element layer DEL and cover the display element layer DEL. The encapsulation layer 300 includes at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 2 3 , the encapsulation layer 300 includes a first inorganic encapsulation layer 310 , an organic encapsulation layer 320 , and a second inorganic encapsulation layer 330 stacked in sequence.

[0090] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic substances selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymer-based material. Polymer-based materials may include acrylic resins, epoxy resins, polyimide, and polyethylene. As one embodiment, the organic encapsulation layer 320 may include acrylate. The organic encapsulation layer 320 may be formed by curing a monomer or applying a polymer. The organic encapsulation layer 320 may be transparent.

[0091] Although not shown in the figure, a touch sensor layer may be provided above the encapsulation layer 300, and an optical functional layer may be provided above the touch sensor layer. The touch sensor layer can obtain coordinate information generated by external input, such as a touch event. The optical functional layer can reduce the reflectivity of light (external light) incident from the outside to the display device, and / or can improve the color purity of the light emitted by the display device. As one embodiment, the optical functional layer may include a phase retarder and / or a polarizer. The phase retarder may be a film type or a liquid crystal coating type, and may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may also be a film type or a liquid crystal coating type. The film type may include a stretched synthetic resin film, and the liquid crystal coating type may include liquid crystals arranged in a prescribed array. The phase retarder and the polarizer may further include a protective film.

[0092] An adhesive component may be provided between the touch sensor layer and the optical functional layer. The adhesive component may be any conventional adhesive component known in the art without limitation. The adhesive component may be a pressure sensitive adhesive (PSA).

[0093] Figure 3 It is a cross-sectional view schematically showing an apparatus for manufacturing a display device according to an embodiment of the present invention. Figure 3 Schematically represents the process execution mode.

[0094] Reference Figure 3 The display device manufacturing apparatus 2 of this embodiment can be used to manufacture the aforementioned display device 1. For example, the display device manufacturing apparatus 2 is a plasma-based apparatus and can be used to deposit at least one layer of the aforementioned display device 1. Furthermore, the display device manufacturing apparatus 2 can be used to etch at least one layer of the aforementioned display device 1 for patterning. For convenience, the following description focuses on the case where the display device manufacturing apparatus 2 is used to deposit at least one layer of the display device 1 using plasma.

[0095] The display device manufacturing apparatus 2 according to an embodiment of the present invention may include a first chamber 10 , a workbench 30 , a second chamber 20 , a purge gas supply unit 60 , an exhaust unit 70 , a gas supply unit 80 , and a plasma induction unit 40 .

[0096] A space may be formed inside the first chamber 10 , and may provide a space for receiving the display substrate DS and performing a deposition process.

[0097] Here, the display substrate DS may refer to a substrate 100 on which at least one of an organic layer, an inorganic layer, and a metal layer is deposited and which is in the process of manufacturing a display device. Alternatively, the display substrate DS may be a substrate 100 on which no organic layer, an inorganic layer, or a metal layer has been deposited.

[0098] A portion of the first chamber 10 may be formed with an opening, and a purge gas supply unit 60 may be disposed in the opening portion of the first chamber 10. The purge gas supply unit 60 may supply a purge gas to purge unreacted source gas and reaction byproducts that may be generated during the deposition process. The purge gas supplied to the purge gas supply unit 60 may be controlled by a purge gas regulator 60M to control the supply, timing, and amount of the purge gas.

[0099] A portion of the first chamber 10 may also be formed to have other openings, and an exhaust portion 70 may also be provided at this opening portion of the first chamber 10. In one embodiment, the exhaust portion 70 may include a gate valve. In this case, the opening portion of the first chamber 10 may be opened or closed according to the operation of the gate valve. In this way, unreacted source gas, purge gas, reaction byproducts, etc. can be discharged. In one embodiment, the exhaust portion 70 may be connected to a vacuum pump 71, and a negative pressure may be formed according to the operation of the vacuum pump 71 to facilitate the discharge of gases and the like to the outside.

[0100] The work stage 30 may be housed within the first chamber 10 and supported to place the display substrate DS. The work stage 30 may include a rotation drive unit 31 and may be rotated by the rotation drive unit 31. In one embodiment, the work stage 30 may include a heating unit that applies heat to the display substrate DS to adjust the deposition temperature.

[0101] The second chamber 20 can be arranged on one side of the first chamber 10, for example, on the upper part ( Figure 3 In one embodiment, the second chamber 20 may be configured as a cylindrical tube. The upper portion of the first chamber 10 may be formed with an opening, and the cylindrical second chamber 20 may be connected and communicated with the upper portion of the opening of the first chamber 10. The source gas may be injected into the second chamber 20, and plasma PL may be generated in the second chamber 20.

[0102] In one embodiment, the second chamber 20 may comprise an insulating material. To generate the plasma PL, the second chamber 20 must transmit electromagnetic waves from the plasma inducing section 40. Furthermore, the second chamber 20 must be heat-resistant to the high temperatures encountered during the plasma generation process. Because the second chamber 20 of this embodiment comprises an insulating material, it transmits electromagnetic waves and exhibits high heat resistance.

[0103] The gas supply unit 80 may be disposed on one side of the second chamber 20, for example, on the upper side ( Figure 3 The gas supply unit 80 can supply source gases to the second chamber 20. In one embodiment, the gas supply unit 80 can include multiple gas lines and independently supply multiple gases to the second chamber 20. The gas supply unit 80 can be controlled by a gas regulator 80M to control the supply, timing, and amount of the source gases.

[0104] The plasma inducing portion 40 may, for example, generate plasma in the second chamber 20. In one embodiment, the plasma inducing portion 40 may generate plasma in an inductively coupled plasma (ICP) manner.

[0105] The plasma inducing unit 40 may include an antenna unit 41 and a first power supply unit 42. The antenna unit 41 may be configured in a coil shape so as to surround the outer circumference of the second chamber 20. For example, the antenna unit 41 may be configured in a solenoid coil shape. The antenna unit 41 may be electrically connected to the first power supply unit 42, which supplies the first high-frequency power. The antenna unit 41 may be supplied with the first high-frequency power, so that current flows through the coil, forming a magnetic field within the coil, i.e., within the second chamber 20. Furthermore, the magnetic field may induce an electric field in the source gas within the second chamber 20, thereby accelerating the rotation of electrons and generating plasma with a high plasma density from the source gas.

[0106] The first power supply 42 can provide first high-frequency power. In one embodiment, the first power supply 42 can provide power at a radio frequency. In this case, the frequency of the first high-frequency power can be between 10 MHz and 15 MHz. Furthermore, according to one embodiment, an impedance matching transformer can be provided in the first power supply 42. The impedance matching transformer can maximize the transmission efficiency of the first high-frequency power by matching the impedance of the first high-frequency power to the impedance of the plasma inducing section 40.

[0107] As described above, the display device manufacturing apparatus 2 operates as follows: a deposited display substrate DS is loaded into the first chamber 10. The display substrate DS may be loaded by a moving unit such as a robot. The display substrate DS may have a plurality of layers stacked on the substrate 100. The display substrate DS may be placed on a workbench 30.

[0108] Next, the first chamber 10 may be in a vacuum state. For example, a vacuum state may be formed inside the first chamber 10 by operating the vacuum pump 71. The display substrate DS may be adjusted to a process temperature on the stage 30.

[0109] Next, a first source gas may be supplied into the first chamber 10. The first source gas may be injected into the second chamber 20 through the gas supply unit 80 and then supplied to the first chamber 10. The first source gas may be supplied for a predetermined time so as to be adsorbed onto the display substrate DS. In one embodiment, the first source gas may be a precursor gas of a substance to be deposited.

[0110] Next, the second source gas may be supplied into the second chamber 20. The second source gas may be injected into the second chamber 20 through the gas supply unit 80. After the second source gas is supplied, the second source gas may be converted into a plasma state by the plasma induction unit 40. The second source gas in the plasma state may include ions and radicals and may have high reactivity.

[0111] Next, radicals of the second source gas in a plasma state may be supplied into the first chamber 10. The radicals may react with the first source gas adsorbed on the display substrate DS to form a layer to be deposited on the display substrate DS.

[0112] Next, a purge gas may be supplied into the first chamber 10. The purge gas may be supplied into the first chamber 10 through the purge gas supply unit 60. Thus, the second source gas and / or byproducts generated by the reaction may be exhausted to the outside through the exhaust unit 70.

[0113] The mode of the display device manufacturing apparatus 2 operating in the aforementioned steps can be defined as a process execution mode. For example, the process execution mode may refer to a mode of the display device manufacturing apparatus 2 performing deposition or etching using plasma.

[0114] Figure 4 It is a cross-sectional view schematically showing an apparatus for manufacturing a display device according to an embodiment of the present invention. Figure 4 Schematically represents the cleaning mode.

[0115] Reference Figure 4 The display device manufacturing apparatus 2 can execute the cleaning mode after or before the process execution mode. Since the various structural elements in the cleaning mode to be described below are similar to the aforementioned structural elements, the following description will focus on the differences.

[0116] In one embodiment, the manufacturing apparatus 2 of the display device may further include a cleaning unit 50. The cleaning unit 50 may be utilized to clean the inner side surface of a chamber, such as the second chamber 20. As the aforementioned process execution mode is implemented multiple times, byproducts generated by the process may adhere to and accumulate on the inner side surface of the second chamber 20. In particular, when byproducts generated by the deposition or etching of a metal layer (e.g., metal substances such as copper, silver, and gold) adhere to and accumulate on the inner side surface of the second chamber 20, this may hinder the generation of plasma in the plasma inducing unit 40. Specifically, metal substances such as copper, silver, and gold are conductors and cannot transmit electromagnetic waves. Therefore, the magnetic field generated by the antenna unit 41 of the plasma inducing unit 40 is blocked by the metal substance and cannot affect the source gas inside the second chamber 20, thereby hindering the generation of plasma. The cleaning unit 50 of an embodiment of the present invention can remove such byproducts.

[0117] Specifically, the cleaning unit 50 may generate plasma in the second chamber 20. In one embodiment, the cleaning unit 50 may generate plasma in a capacitive coupled plasma (CCP) manner.

[0118] The cleaning section 50 may include an electrode section 51 and a second power supply section 52. The electrode section 51 may be arranged in a cylindrical shape extending in one direction in a manner surrounding the outer circumferential surface of the second chamber 20. In other words, the electrode section 51 may be arranged in a tubular shape, and the second chamber 20 may be accommodated in the space inside the tube. In this case, the second chamber 20 may be arranged in a tubular shape extending in one direction as described above, and the outer circumferential surfaces of the electrode section 51 and the second chamber 20 may be arranged in concentric circles in a top view. Of course, since the electrode section 51 is arranged in a manner surrounding the second chamber 20, the diameter D2 of the electrode section 51 may be larger than the diameter D1 of the second chamber 20. In addition, it should be understood that the electrode section 51 may be arranged at a predetermined interval (D2-D1) from the outer circumferential surface of the second chamber 20 in the radial direction.

[0119] The electrode unit 51 can be electrically connected to the second power supply unit 52 that supplies the second high-frequency power, thereby forming an electric field in the gas inside the second chamber 20 disposed inside the electrode unit 51. This can generate plasma inside the second chamber 20.

[0120] The second power supply unit 52 can be electrically connected to the electrode unit 51 to provide a second high-frequency power. In one embodiment, the second power supply unit 52 can provide power at a radio frequency. At this time, the frequency of the second high-frequency power can be greater than 0.1 MHz and less than 1 MHz. In this way, the frequency of the second high-frequency power supplied by the second power supply unit 52 can be less than the frequency of the first high-frequency power supplied by the first power supply unit 42. In one embodiment, the frequency of the first high-frequency power can be greater than 10 times and less than 15 times the frequency of the second high-frequency power. In addition, according to one embodiment, an impedance matching transformer can be provided in the second power supply unit 52. The impedance matching transformer can maximize the transmission efficiency of the second high-frequency power by matching the impedance of the second high-frequency power with the impedance of the electrode unit 51.

[0121] Such a cleaning unit 50 can induce strong sputtering of plasma on the inner surface of the second chamber 20. This can remove byproducts, such as metal substances such as copper, silver, and gold, that adhere to and accumulate on the inner surface of the second chamber 20. According to the aforementioned embodiment, the antenna unit 41 of the plasma inducing unit 40 can be configured in the shape of a solenoid coil. In this case, byproducts are particularly likely to adhere to and accumulate on the inner surface of the second chamber 20 corresponding to the space between the spirals constituting the coil. According to one embodiment of the present invention, a cylindrical electrode unit 51 can be provided in a manner that completely covers the area where the antenna unit 41 was previously provided, thereby effectively removing byproducts from the inner surface of the second chamber 20 by sputtering.

[0122] To this end, the cleaning unit 50 can be replaced with the plasma inducing unit 40. In other words, the display device manufacturing apparatus 2 can selectively be equipped with the plasma inducing unit 40 or the cleaning unit 50. For example, in a process execution mode, in order to perform deposition or etching using a high-density plasma, the plasma inducing unit 40 can be installed outside the second chamber 20. After the process is completed, or before the process begins, the plasma inducing unit 40 can be removed and the cleaning unit 50 can be installed outside the second chamber 20. In this case, as an embodiment, the plasma inducing unit 40 and the cleaning unit 50 can be replaced by a robotic arm. Alternatively, they can be replaced manually by the user. This removes byproducts adhering to the inside of the second chamber 20 and enables the plasma inducing unit 40 to generate plasma more efficiently.

[0123] In addition, when the display device manufacturing apparatus 2 is operated, for example, in the cleaning mode, preparations for cleaning can be performed first. For example, the vacuum pump 71 can be operated to form a vacuum state in the first chamber 10 and the second chamber 20 .

[0124] Next, a third source gas may be supplied into the second chamber 20. The third source gas is a cleaning source gas and may be injected into the second chamber 20 through the gas supply unit 80. In one embodiment, the third source gas may include argon (Ar) having excellent reactivity.

[0125] Next, the second power supply unit 52 applies high frequency power to the electrode unit 51. This converts the third source gas in the second chamber 20 into a plasma state and removes byproducts on the inner surface of the second chamber 20 by sputtering.

[0126] Next, a purge gas may be supplied to the first chamber 10 and the second chamber 20. The purge gas may be supplied to the first chamber 10 and the second chamber 20 through the purge gas supply unit 60. Thus, the third source gas and / or byproducts generated by the reaction may be exhausted to the outside through the exhaust unit 70.

[0127] In order to further improve the cleaning effect, the above operation can be repeatedly performed as a cycle.

[0128] Figure 5 and Figure 6 FIG. 1 is a cross-sectional view schematically showing an electrode portion of an embodiment of the present invention. Figure 5 and Figure 6 The electrode portion 51 is shown as the center, and most of the other structures are omitted. Since the manufacturing apparatus 2 of the display device of this embodiment is similar to the above-mentioned one, the following description will focus on the differences.

[0129] Reference Figure 5 In one embodiment, a plurality of electrode portions 51 may be provided. For example, Figure 5 As shown, the electrode portion 51 may include a first electrode portion 51a and a second electrode portion 51b. Similar to the above, the first electrode portion 51a and the second electrode portion 51b may be provided in a cylindrical shape so as to surround the outer circumference of the second chamber 20. In other words, the first electrode portion 51a and the second electrode portion 51b may be provided in a tubular shape, and the second chamber 20 may be accommodated in the space inside the tubular shape. The first electrode portion 51a and the second electrode portion 51b may be provided in an extension direction of the second chamber 20 (for example, Figure 5 In this case, the power can be increased by providing a power supply unit 52 for each of the first electrode portion 51a and the second electrode portion 51b. Furthermore, in one embodiment, the first electrode portion 51a and the second electrode portion 51b can be disposed in locations within the second chamber 20 where a large amount of byproducts are deposited. This allows for the effective removal of byproducts from the inner surface of the second chamber 20.

[0130] In addition, although not shown in the drawings, the length of the first electrode portion 51a and the length of the second electrode portion 51b may be different from each other. In this case, the length of the first electrode portion 51a and the second electrode portion 51b may refer to the direction in which the electrode portions are arranged (for example, Figure 5 In this case, a corresponding compact electrode portion can be provided at a location that requires cleaning, and the cleaning effect can be improved.

[0131] In addition, refer to Figure 6 , the diameters of the first electrode portion 51a and the second electrode portion 51b may be different. For example, the diameter D2 of the first electrode portion 51a may be greater than the diameter D3 of the second electrode portion 51b. In other words, the distance (D2-D1) separating the first electrode portion 51a from the outer peripheral surface of the second chamber 20 may be greater than the distance (D3-D1) separating the second electrode portion 51b from the outer peripheral surface of the second chamber 20. In this way, the sputtering intensity can be adjusted by adjusting the diameter of the electrode portion. For example, the sputtering intensity of the portion in the second chamber 20 where a large amount of by-products are attached can be adjusted to be stronger, and the sputtering intensity of the portion in the second chamber 20 where a relatively small amount of by-products are attached can be adjusted to be weaker.

[0132] While the present invention has been described with reference to the embodiments illustrated in the accompanying drawings, these are merely illustrative. A person skilled in the art will appreciate that various modifications and equivalent embodiments are possible based on the embodiments. Therefore, the true scope of protection of the present invention should be determined based on the technical principles of the claims.

Claims

1. A manufacturing apparatus for a display device, comprising: a first cavity, wherein a display substrate is loaded inside the first cavity; a second chamber, communicating with the first chamber, generating a first plasma or a second plasma in the second chamber; a gas supply portion, configured to supply the first gas or the second gas to the second chamber; a plasma inducing portion, configured to apply a magnetic field to the second chamber using a first high-frequency power to generate the first plasma from the first gas to perform deposition or etching on the display substrate; as well as a cleaning unit, configured to apply an electric field to the second chamber using a second high-frequency power to generate the second plasma from the second gas to clean the inner wall of the second chamber; The plasma inducing portion and the cleaning portion are selectively replaceable with each other.

2. The manufacturing apparatus of a display device according to claim 1, wherein: The first high-frequency power and the second high-frequency power have frequencies different from each other.

3. The manufacturing apparatus of a display device according to claim 1, wherein: The frequency of the first high-frequency power is 10 times or more and 15 times or less of the frequency of the second high-frequency power.

4. The manufacturing apparatus of a display device according to claim 1, wherein: The frequency of the first high-frequency power is greater than or equal to 10 MHz and less than or equal to 15 MHz.

5. The manufacturing apparatus of a display device according to claim 1, wherein: The frequency of the second high-frequency power is greater than or equal to 0.1 MHz and less than or equal to 1 MHz.

6. The manufacturing apparatus of a display device according to claim 1, wherein: The plasma inducing portion includes: an antenna portion arranged in a solenoid coil shape so as to surround the second cavity; and The first power supply unit is configured to supply the first high-frequency power to the antenna unit.

7. The manufacturing apparatus of a display device according to claim 6, wherein: The plasma inducing portion generates the first plasma by inductive coupling.

8. The manufacturing apparatus of a display device according to claim 1, wherein: The second chamber is configured to be in a tube shape extending along the first direction, The cleaning unit includes: an electrode portion, arranged in a cylindrical shape extending along the first direction so as to surround the second chamber; and The second power supply unit is configured to supply the second high-frequency power to the electrode unit.

9. The manufacturing apparatus of a display device according to claim 8, wherein: The electrode portion and the second chamber are arranged concentrically in a plan view.

10. The manufacturing apparatus of a display device according to claim 9, wherein: The electrode portion has a diameter formed to be larger than a diameter of the second cavity.

11. The manufacturing apparatus of a display device according to claim 8, wherein: The electrode portion includes: a cylindrical first electrode portion; and a cylindrical second electrode portion arranged side by side with the first electrode portion in the first direction.

12. The manufacturing apparatus of a display device according to claim 11, wherein: The first electrode portion and the second electrode portion have different diameters from each other.

13. The manufacturing apparatus of a display device according to claim 11, wherein: The first electrode portion and the second electrode portion have different lengths from each other.

14. The manufacturing apparatus of a display device according to claim 11, wherein: A distance between the first electrode portion and the outer peripheral surface of the second chamber is different from a distance between the second electrode portion and the outer peripheral surface of the second chamber.

15. The manufacturing apparatus of a display device according to claim 8, wherein: The cleaning portion generates the second plasma in an electrostatic coupling manner.

16. A method for manufacturing a display device, comprising the steps of: preparing a display substrate in a first chamber; supplying a first gas to a second chamber connected to the first chamber; generating a first plasma from the first gas in the second chamber using a plasma inducing portion supplied with a first high-frequency power, and supplying the first plasma into the first chamber; performing deposition or etching on the display substrate housed in the first chamber using the first plasma; supplying a second gas to the second chamber; and A cleaning unit supplied with a second high-frequency power generates a second plasma from the second gas in the second chamber to remove reaction byproducts from the inner wall of the second chamber.

17. The method for manufacturing a display device according to claim 16, wherein: The plasma inducing portion or the cleaning portion is selectively installed outside the second chamber.

18. The method for manufacturing a display device according to claim 16, wherein: After removing the reaction byproducts from the inner wall of the second chamber, the method further includes a step of purging the reaction byproducts by supplying a purge gas into the second chamber.

19. The method for manufacturing a display device according to claim 16, wherein: The plasma inducing portion includes: an antenna portion arranged in a solenoid coil shape so as to surround the second cavity; and The first power supply unit is configured to supply the first high-frequency power to the antenna unit.

20. The method for manufacturing a display device according to claim 16, wherein: The second chamber is configured to be in a tube shape extending along the first direction, The cleaning unit includes: an electrode portion, arranged in a cylindrical shape extending along the first direction so as to surround the second chamber; and The second power supply unit is configured to supply the second high-frequency power to the electrode unit.

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