Electromagnetic shielding manufacturing method and packaging structure

Abstract

The invention provides an electromagnetic shielding manufacturing method and a packaging structure. The manufacturing method comprises the steps of providing a substrate; the substrate is provided with a first bonding pad and a second bonding pad, and the first bonding pad is grounded. And the second bonding pad is used for mounting the first chip. And forming a shielding line on the substrate. Wherein a first line arc is formed; and forming a first colloid covering the first wire arc. And disconnecting the first wire arc, and taking the first wire arc connected with the first bonding pad as a shielding wire. The shielding line is located on the periphery of the first chip. And performing plastic packaging on the first chip to form a plastic packaging body. And forming a first metal layer electrically connected with the shielding line on the plastic package body. The manufacturing method is simple in process, the reliability and consistency of shielding wire manufacturing are improved, the packaging quality is improved, and the electromagnetic shielding effect is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and in particular to an electromagnetic shielding manufacturing method and a packaging structure. Background Art

[0002] With the rapid development of the semiconductor industry, the system-in-package (SIP) module structure has become widely adopted. This approach packages and stacks chips with different functions. Its main advantages include high-density integration, compact package size, superior performance, and high signal transmission frequency. As electronic products utilize high-frequency signals in the communications field, there is a demand for products with segmented electromagnetic shielding structures to prevent electromagnetic interference between various chips and components. Existing segmented EMI shielding technologies primarily use wire bonding to form metal pillars, creating a shielding structure. These metal pillars are typically bonded using ultrasonic welding, typically using aluminum or gold wire. Ultrasonic waves from an ultrasonic generator generate high-frequency vibrations through a transducer, which are then transmitted to a splitting tool via a horn. When the splitting tool contacts the wire and the workpiece, the pressure and vibration cause the two metal surfaces to rub against each other, destroying the oxide film and causing plastic deformation. This results in close contact between the two pure metal surfaces, achieving ionic bonding and ultimately forming a strong mechanical connection.

[0003] However, the metal pillars are vertically bonded, and when bonding vertically, friction between the two metal surfaces at the top is not possible. Existing techniques achieve this by bending the vertical wires through high-frequency vibration and the lateral movement of a splitting knife. Specifically, the splitting knife's lateral movement and downward pressure bend the wire arc to create a crack, and then the splitting knife's upward movement breaks the wire arc at the crack, completing the vertical bonding. Due to the flexible deformation of the metal, it is difficult for the top of the vertical wire to form a vertical structure. The metal pillars are prone to tilting, resulting in uneven spacing between the multiple metal pillars, allowing interference to pass through, thus affecting the electromagnetic shielding effect. Summary of the Invention

[0004] The object of the present invention is to provide an electromagnetic shielding manufacturing method and a packaging structure, the electromagnetic shielding structure is stable and the shielding effect is good.

[0005] In a first aspect, the present invention provides a method for manufacturing an electromagnetic shield, comprising: Providing a substrate; the substrate is provided with a first pad and a second pad, the first pad is grounded; the second pad is used for mounting a first chip; forming a shielding line on the substrate; wherein a first arc is formed on the substrate; forming a first colloid covering the first arc; disconnecting the first arc and using the first arc connected to the first pad as a shielding line; the shielding line is located at the periphery of the first chip; Plastic-sealing the first chip to form a plastic-sealed body; A first metal layer electrically connected to the shielding wire is formed on the plastic package body.

[0006] In an optional embodiment, the step of forming a shielding line on the substrate includes: Mounting a bonding portion on the substrate; the bonding portion covers the second pad; forming a first arc; one end of the first arc is connected to the first pad, and the other end is connected to the bonding portion; forming a first colloid covering the first arc; The first wire arc is disconnected, the first wire arc not connected to the first pad is removed, and the first wire arc connected to the first pad is used as the shielding wire.

[0007] In an optional embodiment, after the step of forming the shielding line on the substrate, the method further includes: removing the bonding portion to expose the second pad; The first chip is mounted on the second pad.

[0008] In an optional embodiment, the step of attaching a wire bonding portion to the substrate includes: forming a second metal layer on a side of the bonding portion away from the substrate; In the step of forming a first arc, one end of the first arc away from the first pad is connected to the second metal layer.

[0009] In an optional embodiment, the substrate further includes a third grounded pad, and the first pad and the third pad are both provided on the periphery of the first chip; and the step of forming a shielding line on the substrate includes: forming a first arc connecting the first pad and the bonding portion; forming a second arc connected to the third pad; an end of the second arc away from the third pad is located between the third pad and the bonding portion; The first arc and the second arc are disconnected respectively; the first arc connected to the first pad and the second arc connected to the third pad serve together as the shielding line.

[0010] In an optional embodiment, the step of breaking the first wire arc includes grinding the bonding portion to remove the first wire arc above the bonding portion.

[0011] In an optional embodiment, a fourth pad is further provided on the substrate, and before the step of disconnecting the first arc, the method further includes: A protection layer is mounted on the fourth pad, and a thickness of the protection layer is lower than a thickness of the bonding portion.

[0012] In an optional embodiment, the step of breaking the first wire arc includes: grinding the wire bonding portion until it is flush with the protective layer, and grinding away the first wire arc that is higher than the protective layer.

[0013] In an optional embodiment, after the step of breaking the first arc, the step further includes: removing the protective layer.

[0014] In an optional embodiment, after the step of removing the protective layer, the method further includes: mounting a second chip on the fourth pad.

[0015] In an optional embodiment, before the step of plastic-sealing the first chip to form a plastic package, the step further includes: removing the first colloid.

[0016] In an optional embodiment, the step of forming a shielding line on the substrate includes: Mounting a first chip on the substrate; electrically connecting the first chip and the second pad; forming a bonding portion on a side of the first chip away from the substrate; forming a first arc; one end of the first arc is connected to the first pad, and the other end is connected to the bonding portion; forming a first colloid covering the first arc; The first wire arc is disconnected, the first wire arc not connected to the first pad is removed, and the first wire arc connected to the first pad is used as the shielding wire.

[0017] In an optional embodiment, the step of forming a bonding portion on a side of the first chip away from the substrate includes: Mounting a first cover on the substrate, wherein the first cover covers the first chip; the first cover serves as the bonding portion; Alternatively, a second colloid higher than the first chip is formed on the periphery of the first chip, and a first cover is mounted on the second colloid.

[0018] In an optional embodiment, the first cover is provided with a second metal layer, and the first wire arc connects the first pad and the second metal layer; Alternatively, the first cover plate is provided with a third metal layer, and the first wire arc connects the first pad and the third metal layer.

[0019] In an optional embodiment, after the step of forming the shielding line on the substrate, the method further includes: Remove the first cover body, or remove the first cover plate.

[0020] In an optional embodiment, before the step of plastic-sealing the first chip to form a plastic package, the step includes: The second colloid is removed.

[0021] In a second aspect, the present invention provides an electromagnetic shielding manufacturing method, comprising: Providing a plastic package with shielded wires; Providing a substrate with a first chip mounted thereon; wherein the substrate is provided with a first grounded pad; Covering the plastic package body to the substrate; wherein the plastic package body covers the first chip, and the shielding wire is electrically connected to the first pad and is located at the periphery of the first chip; A first metal layer electrically connected to the shielding line is formed on a side of the plastic package away from the substrate.

[0022] In an optional embodiment, the step of providing a plastic package body having a shielded wire includes: Provide the first vehicle; Mounting a wire bonding unit on the first carrier; forming a third arc connecting the first carrier and the bonding portion; forming a third colloid covering the third arc; disconnecting the third wire arc, removing the third wire arc not connected to the first pad, and using the third wire arc connected to the first pad as the shielding wire; forming a semi-cured plastic package covering the shielding wire and the bonding portion on the first carrier; removing the first carrier; The bonding portion is removed to form a groove on the plastic package body.

[0023] In an optional embodiment, in the step of covering the plastic package body to the substrate, the first chip is accommodated in the groove.

[0024] In an optional embodiment, the step of covering the plastic package body with the substrate includes: Covering the semi-cured plastic package body on the substrate in a laminating manner; Pressing the semi-cured plastic package body to solidify the plastic package body; The plastic package body is ground to expose the shielding wire from the surface of the plastic package body.

[0025] In an optional embodiment, the first carrier is provided with a second wire bonding pad, and the step of mounting the wire bonding portion on the first carrier includes: Mounting a wire bonding unit on the first carrier; Mounting a protective layer on the first carrier; wherein the thickness of the protective layer is smaller than the thickness of the bonding portion; In the step of forming a third wire arc connecting the first carrier and the wire bonding portion: the third wire arc connects the second wire bonding pad and the wire bonding portion; The step of breaking the third arc includes: grinding the third arc and the bonding portion until they are flush with the protective layer; The step of removing the first carrier then includes: The bonding portion and the protective layer are removed to form the groove on the plastic package body.

[0026] In an optional embodiment, in the step of removing the first carrier, the second wire bonding pad on the first carrier is separated from the first carrier, and the second wire bonding pad is connected to the shielding wire as a whole.

[0027] In an optional embodiment, the step of providing a plastic package body having a shielded wire includes: Providing a second carrier; the second carrier has a protrusion; forming a shielding line on the second carrier, wherein a fourth arc is formed connecting the second carrier and the protruding portion, and the fourth arc is disconnected to form the shielding line; forming a semi-cured plastic package covering the shielding wire and the protruding portion on the second carrier; The second carrier is removed to form a groove on the plastic package body, wherein the position of the groove corresponds to the position of the protrusion.

[0028] In an optional embodiment, the protrusion includes a first protrusion and a second protrusion, and the height of the first protrusion is higher than the height of the second protrusion; The step of forming a shielding line on the second carrier includes: forming a fourth arc connecting the second carrier and the first protrusion; The fourth wire arc is disconnected; and the fourth wire arc and the first protrusion are ground until they are flush with the second protrusion to form the shielding wire.

[0029] In an optional embodiment, in the step of removing the second carrier, the third wire bonding pad on the second carrier is separated from the second carrier, and the third wire bonding pad is connected to the shielding wire as a whole.

[0030] In a third aspect, the present invention provides a packaging structure manufactured using the electromagnetic shielding manufacturing method described in any one of the aforementioned embodiments.

[0031] Optionally, the packaging structure includes: a substrate, wherein the substrate is provided with a shielding wire; A first device and a second device are mounted on the substrate, and the first device and the second device are electrically connected to the substrate respectively; the shielding line is provided between the first device and the second device; a plastic package body connected to the substrate and covering the first device and the second device; A first metal layer is provided on the surface of the plastic package body, the first metal layer is connected to an end of the shielding wire away from the substrate; and at least one of the first metal layer and the shielding wire is grounded.

[0032] Optionally, the first metal layer is provided on a portion of the surface of the plastic package body; the projection of the first metal layer on the substrate covers the first device; the projection of the first metal layer on the substrate is staggered with the second device.

[0033] The electromagnetic shielding manufacturing method and packaging structure provided by embodiments of the present invention utilize a first wire arc connected to the substrate and the bonding portion when forming a shielding wire, thereby reducing the number of bonding pads on the substrate. The first wire arc is coated with a first colloid, and when the first wire arc is disconnected to form the shielding wire, this improves the reliability and stability of the shielding wire, enhances the electromagnetic shielding effect, and improves the packaging quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 One of the process diagrams of the first method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the height of the middle bonding part and the protective layer; Figure 3 A schematic structural diagram of forming a second arc in the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 4 A schematic diagram of a distribution structure of the first arc and the second arc on the substrate in the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 5 A second process diagram of the first method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 6 A third process diagram of the first method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 7 A schematic diagram of mounting a first bonding structure in the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 8 A schematic diagram of a packaging process for mounting a second bonding structure in the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 9 One of the process diagrams of the second method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 10 A second process diagram of the second method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 11 A third process diagram of the second method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 12 One of the process diagrams of the third method of the electromagnetic shielding manufacturing method provided by the embodiment of the present invention; Figure 13 A second process diagram of the third method of the electromagnetic shielding manufacturing method provided by an embodiment of the present invention; Figure 14 A schematic diagram of a first packaging structure provided by an embodiment of the present invention; Figure 15 A schematic diagram of a second packaging structure provided by an embodiment of the present invention; Figure 16 A schematic diagram of a third packaging structure provided by an embodiment of the present invention.

[0036] Icons: 100 - packaging structure; 110 - substrate; 111 - first pad; 112 - second pad; 113 - third pad; 114 - fourth pad; 115 - ground wiring; 121 - first chip; 122 - second chip; 123 - bottom filler; 130 - shielding wire; 131 - first wire loop; 132 - first colloid; 133 - second wire loop; 140 - bonding part; 141 - second metal layer; 142 - bonding glue; 143 - protective layer; 144 - first cover; 145 - second colloid; 146-first cover plate; 1461-third metal layer; 147-protective cover; 150-plastic package; 160-first metal layer; 210-first carrier; 211-second wire bonding pad; 220-third wire arc; 221-third colloid; 151-first plastic package; 154-groove; 230-second carrier; 231-third wire bonding pad; 232-first protrusion; 233-second protrusion; 234-fourth wire bonding pad; 240-fourth wire arc; 241-fourth colloid; 152-second plastic package. DETAILED DESCRIPTION

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0038] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0039] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0040] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like indicate positions or locations based on the positions shown in the accompanying drawings, or the positions or locations in which the inventive product is typically placed when in use. These terms are intended solely to facilitate the description of the present invention and to simplify the description, and are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0041] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0042] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0043] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0044] An electromagnetic shielding manufacturing method proposed in an embodiment of the present invention is beneficial for improving the structural stability and distribution uniformity of the shielding wire and enhancing the electromagnetic shielding effect. The manufacturing method is generally as follows: Combine Figure 1 , providing a substrate 110. Substrate 110 can be a base plate, a silicon substrate, a PCB board, an MIS substrate, or a ceramic substrate. The surface of substrate 110 is divided into a shielding separation area. Substrate 110 is provided with a first solder pad 111 and a second solder pad 112. First solder pad 111 is grounded and disposed in the shielding separation area. First solder pad 111 is used to form a shielding line 130. Second solder pad 112 is used to mount a first chip 121. First solder pad 111 is located outside second solder pad 112 to shorten the wire bonding distance.

[0045] Before or after the step of mounting the first chip 121 on the second pad 112 , the shielding line 130 is formed on the substrate 110 .

[0046] Optionally, if the shielding line 130 is formed before mounting the first chip 121, the method is as follows: A first arc 131 is formed on the substrate 110 ; a first colloid 132 is formed to cover the first arc 131 ; the first arc 131 is disconnected and the first arc 131 connected to the first pad 111 is used as a shielding line 130 ; the shielding line 130 is located outside the first chip 121 .

[0047] Optionally, a bonding portion 140 is mounted on the substrate 110. The bonding portion 140 covers the second pad 112. The first pad 111 is located on the periphery of the bonding portion 140. The bonding portion 140 can be a dummy chip, and the dummy chip can be made of a silicon-based substrate 110, a germanium-based substrate 110, a metal material, or a polymer material. The bonding portion 140 can also be a support pad made of a metal material or a non-metallic material. In the direction perpendicular to the substrate 110, the thickness of the bonding portion 140 must be greater than the thickness of the first chip 121.

[0048] A first wire arc 131 is formed. One end of the first wire arc 131 is connected to the first pad 111, and the other end is connected to the bonding portion 140. Optionally, the first wire arc 131 is connected to the surface of the bonding portion 140 away from the substrate 110. The first wire arc 131 can be formed by bonding. It can be understood that forming the first wire arc 131 by bonding process requires bonding on the metal surface, which has better bonding quality and more stable structure. If the bonding portion 140 is made of metal material, the first wire arc 131 can be formed by bonding directly on the surface of the bonding portion 140. If the bonding portion 140 is made of non-metallic material, it is necessary to first form a second metal layer 141 on the surface of the bonding portion 140 away from the substrate 110, and then perform bonding. In this way, the two ends of the first wire arc 131 are respectively connected to the first pad 111 and the second metal layer 141. The second metal layer 141 can cover the entire surface of the bonding part 140 away from the substrate 110, or it can be dispersedly arranged on the surface of one side of the bonding part 140 away from the substrate 110 according to the bonding position. If a dispersed arrangement is adopted, its shape, size and number are not specifically limited, as long as it can meet the bonding process. In this embodiment, the bonding part 140 adopts a dummy chip. The second metal layer 141 is the first bonding pad. That is, the first bonding pad is set on the dummy chip, and the two ends of the first wire arc 131 are respectively connected to the first pad 111 and the first bonding pad. A dummy chip refers to a semiconductor element or structure without function.

[0049] During wire bonding, a vertical wire may be formed on the first bonding pad 111 first, and then the wire arc may be bent and connected to the first wire bonding pad of the dummy chip, thereby forming a first wire arc 131 .

[0050] Optionally, the dummy chip is bonded to the substrate 110 using a bonding adhesive 142. The bonding adhesive 142 can be a thermoplastic adhesive. The bonding adhesive 142 and the dummy chip cover the second pad 112, thereby protecting the second pad 112. The dummy chip can then be separated from the substrate 110 by heating or light exposure, thereby removing the dummy chip.

[0051] A first colloid 132 is formed to cover the first wire arc 131. A dispensing process is employed to protect the first wire arc 131 with the first colloid 132. The first colloid 132 is a soluble colloid and can be decomposed and removed using chemicals. The material of the first colloid 132 can be a silicon-containing acrylic resin, which can be subsequently removed using sulfuric acid. Alternatively, the first colloid 132 can be a photosensitive colloid, such as polyvinyl laurate, which can subsequently be decomposed and removed using a cross-linking reaction induced by light. Of course, the material of the first colloid 132 is not limited, as long as it is a decomposable material to facilitate subsequent degumming. Forming the first colloid 132 strengthens the structural strength of the connection between the first wire arc 131 and the first pad 111, improving support for the first wire arc 131 and ensuring that the portion connecting the first wire arc 131 to the first pad 111 maintains a vertical structure. This ensures that the subsequently formed shielding wire 130 does not tilt in a direction perpendicular to the substrate 110, maintains uniform spacing between the multiple shielding wires 130, prevents interference from passing through, and enhances electromagnetic shielding effectiveness.

[0052] Disconnect the first wire arc 131, remove the first wire arc 131 that is not connected to the first pad 111, and use the first wire arc 131 connected to the first pad 111 as the shielding wire 130. In this embodiment, a grinding process is used to grind from the surface of the bonding portion 140 away from the substrate 110, grind and remove the top of the first wire arc 131, and grind and remove the first wire arc 131 that is higher than the bonding portion 140. This process will grind and remove the bonding pads of the bonding portion 140, leaving only the first wire arc 131 connected to the first pad 111 as the shielding wire 130. In this way, it can be ensured that the shielding wire 130 is not tilted and that the heights of the multiple shielding wires 130 are consistent. It can be understood that the first colloid 132 can also improve the support of the first wire arc 131 during the grinding process, reducing the risk of tilting or breaking in the non-grinding area due to grinding stress. The non-grinding area is, for example, the low area near the first pad 111.

[0053] Please combine Figure 2Optionally, a fourth pad 114 is further provided on the substrate 110, and the fourth pad 114 is used to mount the second chip 122. In this way, the partition design of the first chip 121 and the second chip 122 can be realized. In order to control the grinding thickness, before the step of disconnecting the first arc 131, a protective layer 143 is mounted on the fourth pad 114, and the thickness of the protective layer 143 is lower than the thickness of the bonding portion 140. Assuming that the protruding height of the bonding portion 140 relative to the substrate 110 is H1, the protruding height of the protective layer 143 relative to the substrate 110 is H2, and the height difference between the protective layer 143 and the bonding portion 140 is H3. H3=H1-H2. During grinding, the surface of the side of the protective layer 143 away from the substrate 110 is used as a reference, and the grinding thickness is controlled to be H3, that is, during the grinding process, the bonding portion 140 is ground until it is flush with the protective layer 143, and the first arc 131 higher than the protective layer 143 is ground away. This can effectively control the grinding accuracy, ensure the high consistency and controllability of all the shielding wires 130 formed, prevent excessive grinding from causing the shielding wires 130 to be too low and weakening the electromagnetic shielding effect, and use the end face of the shielding wire 130 as a reference when subsequently grinding the plastic package 150 to avoid the shielding wire 130 being too low and damaging the first chip 121 or causing cracks in the first chip 121.

[0054] Please combine Figure 3 and Figure 4 Optionally, the substrate 110 further includes a grounded third pad 113, and the first pad 111 and the third pad 113 are jointly arranged on the periphery of the first chip 121. The third pad 113 and the first pad 111 can be arranged adjacent to each other, such as in a staggered, side-by-side, or interspersed design. In this way, a second arc 133 connected to the third pad 113 can be formed. The end of the second arc 133 away from the third pad 113 is located between the third pad 113 and the bonding portion 140. The bonding order of the first arc 131 and the second arc 133 is not limited. The second arc 133 can improve the bonding between the shielding wire 130 and the first colloid 132, as well as the bonding between the subsequent shielding wire 130 and the plastic package 150, to prevent the generation of grinding mechanical stress between the first arc 131 and the dummy chip, which may cause cracks in the first pad 111 at the bottom of the shielding wire 130. In addition, the second arc 133 can increase the distribution density of the shielding wire 130 and improve the electromagnetic shielding performance. The provision of the second wire arc 133 can reduce the number of wire bonding pads on the wire bonding portion 140 , thereby saving effective space on the first chip 121 .

[0055] It should be noted that when forming the second loop 133, the first colloid 132 will cover the first loop 131 and the second loop 133 when the first colloid 132 is formed. When the first loop 131 is ground, the second loop 133 is also ground. After grinding, the first loop 131 connected to the first pad 111 and the second loop 133 connected to the third pad 113 together serve as the shielding wire 130.

[0056] Combine Figure 5 and Figure 6 After forming the shielding line 130, the bonding portion 140 is removed to expose the second pad 112. The bonding portion 140 and the substrate 110 can be separated by a debonding method, thereby removing the bonding portion 140. The debonding method uses ultraviolet light irradiation or heating, etc., depending on the characteristics of the selected bonding glue 142, and is not specifically limited here. Optionally, if a protective layer 143 is attached in the aforementioned step, the protective layer 143 can be removed at the same time as the bonding portion 140 is removed to expose the fourth pad 114.

[0057] The first chip 121 is mounted on the second pad 112. The shielding line 130 is located on the periphery of the first chip 121. Optionally, the second chip 122 is mounted on the fourth pad 114. The first chip 121 can be a radio frequency chip or a filter chip, etc.; the second chip 122 can be a power amplifier chip, etc. Of course, in some other embodiments, the first chip 121 and the second chip 122 can also be other types of chips or components, and the chip type is not limited. The chip mounting method is not limited, and can be either a face-up method or a flip-up method. In this embodiment, the first chip 121 is welded on the second pad 112, and the second chip 122 is welded on the fourth chip, thereby realizing the electrical connection between the chip and the substrate 110. Optionally, a bottom filler 123 is formed at the bottom of the first chip 121 and the second chip 122. The bottom filler 123 protects the welding structure of the chip and the substrate 110, and plays a role in reinforcement and heat dissipation.

[0058] The first chip 121 is encapsulated to form a plastic encapsulation body 150. Optionally, the plastic encapsulation body 150 is formed on the substrate 110 using a plastic encapsulation process. The plastic encapsulation body 150 protects the first chip 121, the second chip 122, the shielding wire 130, and the like. The plastic encapsulation body 150 can be made of a highly thermally conductive plastic encapsulation compound, such as an epoxy-based resin or a silicone-based resin with a highly thermally conductive material. Highly thermally conductive materials include, but are not limited to, alumina thermal conductive powder and nano-alumina, to achieve high thermal conductivity in the product.

[0059] The back of the plastic package body 150 is ground so that the surface of the plastic package body 150 is flush with the end surface of the shielding wire 130, that is, the shielding wire 130 is exposed from the surface of the plastic package body 150. Optionally, the product is cut into individual pieces using a cutting process.

[0060] A first metal layer 160 is formed on the plastic package 150 and electrically connected to the shielding wire 130. Optionally, metal sputtering is performed on the upper surface and surrounding side surfaces of the plastic package 150 of a single product to form the first metal layer 160. The first metal layer 160 is connected to the shielding wire 130 to achieve a partitioned electromagnetic shielding function.

[0061] It is understood that the first colloid 132 can be retained in the product structure or removed before plastic packaging. If it is necessary to remove the first colloid 132, the first colloid 132 around the shielding wire 130 is removed using a chemical agent, and the first colloid 132 is decomposed by the chemical agent. Optionally, the first colloid 132 is removed before the step of removing the bonding portion 140 and the protective layer 143. In this way, the bonding portion 140 and the protective layer 143 can protect the second pad 112 and the fourth pad 114, preventing the second pad 112 and the fourth pad 114 from being contaminated or attacked by the chemical agent, thereby improving the subsequent conductivity and solderability of the second pad 112 and the fourth pad 114.

[0062] In this embodiment, forming bonding pads on the bonding portion 140 can reduce the number of pads designed on the substrate 110 , improve the integration and utilization of the substrate 110 , increase the design space, and shorten the bonding distance.

[0063] In some embodiments, the shielding line 130 can be formed after the first chip 121 is mounted. The preparation method thereof is as follows: Combine Figure 7 and Figure 8 First, the first chip 121 is mounted on the substrate 110. Optionally, the first chip 121 is mounted on the second pad 112. A bonding portion 140 is formed on a side of the first chip 121 away from the substrate 110.

[0064] Optionally, the bonding portion 140 may be a first cover 144, which is attached to the substrate 110 via a bonding adhesive 142 and covers the first chip 121. The first cover 144 may be made of metal or non-metal. Optionally, a second metal layer 141 is provided on the first cover 144. A wire bonding process is used to bond wires between the first pad 111 and the second metal layer 141 to form a first wire arc 131. The second metal layer 141 may be a pad structure or a metal layer covering the entire upper surface of the first cover 144. In some embodiments, if the first cover 144 is made of metal, the second metal layer 141 may also be omitted.

[0065] Alternatively, the bonding portion 140 may include a second colloid 145 surrounding the periphery of the first chip 121 and a first cover plate 146 attached to the second colloid 145. The first cover plate 146 may be made of a metal or non-metal material, and a third metal layer 1461 is provided on the first cover plate 146. The third metal layer 1461 may be a pad structure or a metal layer covering the entire upper surface of the first cover plate 146. The second colloid 145 is formed around the first chip 121, higher than the first chip 121. The second colloid 145 is similar to a retaining wall formed around the first chip 121. A cover plate having the third metal layer 1461 is attached to the side of the second colloid 145 away from the substrate 110. Wire bonding is performed between the first pad 111 and the third metal layer 1461 using a wire bonding process to form the first wire arc 131. Of course, in some embodiments, if the first cover plate 146 is made of metal, the third metal layer 1461 may be omitted.

[0066] Optionally, a second chip 122 is mounted on the fourth pad 114. A protective cover 147 is formed on the second chip 122, and the protective cover 147 covers the second chip 122 to protect the second chip 122. The surface of the side of the protective cover 147 away from the substrate 110 is lower than the surface of the side of the bonding portion 140 away from the substrate 110. The height difference between the two can be used as the subsequent grinding thickness to control the grinding accuracy and avoid excessive grinding to damage the first chip 121 and the second chip 122. It can be understood that the protective cover 147 includes side walls and a cover plate. The side walls and the cover plate can be formed as one piece or can be connected separately. The cover plate and the side walls can be made of the same material or different materials. The protective cover 147 is mounted on the substrate 110 by bonding glue 142. The protective cover 147 can be removed subsequently by debonding.

[0067] Optionally, the protective cover 147 includes a gel surrounding the second chip 122 and a second cover plate mounted on the gel. When removing the protective cover 147, only the second cover plate can be removed while retaining the gel, or both the second cover plate and the gel can be removed.

[0068] In some embodiments, the protective cover 147 may be entirely made of colloid, covering the second chip 122 to protect the second chip 122 .

[0069] Optionally, when attaching the first chip 121 and the second chip 122, an underfill 123 is formed on the bottom of the first chip 121 and the second chip 122. The underfill 123 may include epoxy resin, organosiloxane copolymer, curing agent, additives, and the like.

[0070] After forming the first arc 131, a dispensing process is used to form a first adhesive 132 that covers the first arc 131. After the first adhesive 132 solidifies, the bonding portion 140 and the first arc 131 are polished to form the shielding wire 130. After polishing, the surface of the first adhesive 132 is flush with the end surface of the shielding wire 130.

[0071] Optionally, the first colloid 132, the bonding portion 140, and the protective cover 147 are removed. In this embodiment, the first colloid 132 is removed first, and then the first colloid 132 is decomposed using a chemical agent. The bonding portion 140 and the protective cover 147 can then protect the first chip 121 and the second chip 122 from chemical contamination.

[0072] Of course, in some other embodiments, the first colloid 132 may also be retained, and the second colloid 145 in the bonding portion 140 may also be retained, which is not specifically limited here.

[0073] Next, a plastic package 150 is formed on the substrate 110, ground, cut into individual chips, and a first metal layer 160 is sputtered onto the surface of the plastic package 150. The first metal layer 160 is then electrically connected to the shielding wire 130, completing the manufacturing process. In this manufacturing method, the first chip 121 and the second chip 122 are first mounted on the substrate 110, followed by the bonding portion 140 and protective cover 147. After removing the bonding portion 140 and protective cover 147, there is no need to mount the chips again, which helps improve packaging efficiency.

[0074] It should be noted that if the bonding part 140 includes the second adhesive 145 and a cover plate mounted on the second adhesive 145, when removing the bonding part 140, only the cover plate can be removed, leaving the second adhesive 145. In other words, the second adhesive 145 can be removed or left.

[0075] Optionally, the shielding line 130 may also be formed on the substrate 110 by bonding. One preparation method is as follows: Combine Figures 9 to 11 A first carrier 210 is provided. The first carrier 210 can be made of metal, glass, or other materials. A second bonding pad 211 is formed on the first carrier 210. The bonding portion 140 and the protective layer 143 are mounted on the first carrier 210, with the second bonding pad 211 located outside the bonding portion 140. The thickness of the protective layer 143 is lower than that of the bonding portion 140. The height difference between the two is used to control the subsequent grinding thickness.

[0076] A third wire loop 220 is formed between the first carrier 210 and the bonding unit 140 using a wire bonding process. The ends of the third wire loop 220 are connected to the second bonding pad 211 and the bonding unit 140, respectively. A third adhesive 221 is formed to cover the third wire loop 220. After the third adhesive 221 solidifies, the bonding unit 140 and the third wire loop 220 are polished to form the shielding wire 130. Optionally, the third wire loop 220 and the bonding unit 140 are polished until they are flush with the protective layer 143.

[0077] Optionally, the third colloid 221 can be removed or retained. A first plastic package 151 is formed on the first carrier 210. The first plastic package 151 covers the shielding wire 130, the bonding portion 140 and the protective layer 143. It should be noted that in this step, the first plastic package 151 is a film-like structure in a semi-cured state. The semi-curing temperature of the first plastic package 151 is approximately 50°C to 100°C. The first carrier 210 is removed by debonding. When the first carrier 210 is removed, the second bonding pad 211 on the first carrier 210 is separated from the first carrier 210, and the second bonding pad 211 is connected to the shielding wire 130 as a whole.

[0078] The bonding portion 140 and the protective layer 143 are removed. Optionally, the bonding portion 140 and the protective layer 143 are removed by etching. Thus, a groove 154 is formed on the first plastic package 151 at the location where the bonding portion 140 and the protective layer 143 were removed. Optionally, the first plastic package 151 is cleaned to remove residue from the interior of the groove 154.

[0079] It is understood that in some embodiments, a suspended second wire arc 133 may be formed between the second wire bonding pad 211 and the bonding portion 140. That is, one end of the second wire arc 133 is connected to the second wire bonding pad 211, and the other end is suspended and located between the second wire bonding pad 211 and the bonding portion 140. When grinding the third wire arc 220, the second wire arc 133 is also ground. After grinding, the third wire arc 220 and the second wire arc 133 remaining on the first carrier 210 together serve as the shielding wire 130. The design of the second wire arc 133 can further improve the structural strength of the semi-cured first plastic package 151 and enhance the bonding between the shielding wire 130 and the first plastic package 151.

[0080] A substrate 110 is provided, and a first chip 121 and a second chip 122 are mounted on the substrate 110, respectively. A semi-cured first plastic package 151 including a shielding wire 130 is then covered on the substrate 110. The first chip 121 and the second chip 122 are respectively located in a groove 154, and the shielding wire 130 is electrically connected to the grounding pad on the substrate 110, and the shielding wire 130 is located on the periphery of the first chip 121. The grounding pads on the substrate 110 include but are not limited to the first pad 111 and the second pad 112. Optionally, the semi-cured first plastic package 151 can be covered on the substrate 110 by vacuum lamination. The first plastic package 151 can be made of thermoplastic material.

[0081] Optionally, the first plastic package 151 is laminated. The laminating is performed using an injection molding laminating machine, and the laminating parameters of the laminating machine include: a pressure of 50-450 MPa and a temperature of 180-550 degrees. The laminating conditions can soften the first plastic package 151 of the thermoplastic material, and the softened first plastic package 151 can be filled into the bottom of the first chip 121 and the second chip 122, and completely contact and cover the first chip 121 and the second chip 122, so that the groove 154 formed by removing the bonding portion 140 and the protective layer 143 in the previous step is filled and solidified. After lamination, the thickness of the first plastic package 151 decreases, and the first plastic package 151 reaches a fully solidified state. Thereafter, the first plastic package 151 is ground so that the end face of the shielding wire 130 away from the substrate 110 can be exposed from the surface of the first plastic package 151. In this method, a press-fit process is used to weld the second bonding pad 211 on the shielding wire 130 to the ground pad on the substrate 110 under high temperature and high pressure, resulting in reliable welding. Optionally, flux can be used during the press-fit welding process to improve welding reliability, thereby forming an intermetallic compound (IMC) welding metal layer.

[0082] In this embodiment, shielding wire 130 enhances the structural strength of semi-cured first plastic encapsulation body 151, facilitating control of the press-on height and the amount of fill by first plastic encapsulation body 151 in the gaps surrounding the chip, thereby avoiding voids at the bottom and surrounding areas of the chip. This method also offers greater process efficiency, avoiding issues such as arcing and bending in the mold during conventional encapsulation processes, and enhancing electromagnetic shielding effectiveness.

[0083] Afterwards, the chips are cut and separated into individual products, and then surface sputtering is performed to form a first metal layer 160 electrically connected to the shielding line 130 , thereby completing the packaging process.

[0084] In some other implementations, packaging may also be performed in the following manner: Combine Figures 12 to 13A second carrier 230 is provided, wherein the second carrier 230 has a first protrusion 232 and a second protrusion 233. A third wire bonding pad 231 is formed on the second carrier 230. The third wire bonding pad 231 is located outside the first protrusion 232. Optionally, the height of the second protrusion 233 is lower than the height of the first protrusion 232. The height difference between the two is used to control the subsequent grinding thickness. Optionally, a fourth wire bonding pad 234 is provided on the first protrusion 232.

[0085] A wire bonding process is used to bond wires between the third bonding pad 231 and the first protrusion 232, forming a fourth wire loop 240 connecting the third bonding pad 231 and the fourth bonding pad 234. The fourth wire loop 240 is then coated with a fourth adhesive 241. The first protrusion 232 and the fourth wire loop 240 are then ground flush with the second protrusion 233 to form the shielding wire 130. The surface of the second protrusion 233 is used as a reference for the grinding depth to ensure a consistent height across the shielding wire 130.

[0086] Optionally, the fourth colloid 241 can be removed or retained. A second plastic package 152 is formed on the second carrier 230. The second plastic package 152 covers the shielding wire 130, the first protrusion 232 and the second protrusion 233. It should be noted that in this step, the second plastic package 152 is a film-like structure in a semi-cured state. The second carrier 230 is removed by debonding. In this way, a groove 154 is formed on the second plastic package 152 at a position corresponding to the first protrusion 232 and the second protrusion 233. Optionally, the second plastic package 152 is cleaned to remove residues inside the groove 154.

[0087] The second plastic package 152 is then covered on the substrate 110 with the first chip 121 and the second chip 122 by vacuum coating. The first chip 121 and the second chip 122 are respectively located in the groove 154 of the second plastic package 152, and the third wire bonding pad 231 on the shielding wire 130 is electrically connected to the grounding pad on the substrate 110. The second plastic package 152 is then pressed so that the gap at the bottom of the chip and the groove 154 are filled by the second plastic package 152, and the second plastic package 152 reaches a fully solidified state. The thickness of the second plastic package 152 is reduced by grinding so that the end of the shielding wire 130 away from the substrate 110 is exposed from the surface of the second plastic package 152. After that, cutting and surface metal sputtering are performed to complete the packaging process.

[0088] Combine Figure 14An embodiment of the present invention also provides a package structure 100, manufactured using the above-mentioned electromagnetic shielding method. Package structure 100 includes a substrate 110, a first device, a second device, a plastic package 150, a shielding wire 130, and a first metal layer 160. In this embodiment, the first device is a first chip 121, and the second device is a second chip 122. The first chip 121 and the second chip 122 are respectively mounted on the substrate 110 and electrically connected to the substrate 110. A grounded first pad 111 is provided on the substrate 110, which is electrically connected to the shielding wire 130. The shielding wire 130 is located between the first and second devices and is used to isolate the signals of the first and second devices. The first and second devices include, but are not limited to, chips and components. That is, the shielding wire 130 can prevent electromagnetic interference between chips, isolate interference between chips and components, or isolate interference between components, without specific limitations here. If the first and second devices are chips, they are not limited to flip-chip or face-up chips; both are applicable.

[0089] Optionally, shielding wire 130 is located between first chip 121 and second chip 122. A plastic package 150 is formed on one side of substrate 110 where the chips are located. A first metal layer 160 is provided on the surface of plastic package 150. The end of shielding wire 130 away from substrate 110 is electrically connected to first metal layer 160, providing partitioned shielding for first chip 121 and second chip 122. In some embodiments, shielding wire 130 can be provided not only between first chip 121 and second chip 122, but also around the periphery of first chip 121. Alternatively, shielding wire 130 can be provided on any one or more of the four side surfaces of first chip 121.

[0090] Optionally, the first metal layer 160 may be provided on the entire surface of the plastic package 150, including the peripheral side surface and the upper surface. That is, the surface of the plastic package 150 is completely covered. Of course, the first metal layer 160 may also cover a partial surface of the plastic package 150 according to the actual design of the shielding area, such as Figure 15 As shown, the first metal layer 160 does not cover the mounting area of ​​the second chip 122. If the mounting area of ​​the first chip 121 requires a shielding design, the projection of the first metal layer 160 on the substrate 110 covers the first chip 121; the projection of the first metal layer 160 on the substrate 110 is offset from the second chip 122.

[0091] Optionally, bottoms of the first chip 121 and the second chip 122 are respectively provided with bottom filling glue 123. A ground wiring 115 is provided in the substrate 110, and a ground pad on the surface of the substrate 110 is electrically connected to the ground wiring 115.

[0092] Combine Figure 16Optionally, if the first colloid 132 is not removed in the above manufacturing method, the packaging structure 100 further includes the first colloid 132 , which covers the shielding wire 130 to enhance the support and stability of the shielding wire 130 .

[0093] Optionally, if the second colloid 145 is not removed in the above manufacturing method, the package structure 100 further includes the second colloid 145 , which is disposed around the first chip 121 to enhance support and stability of the structure and improve heat dissipation performance.

[0094] It can be understood that the shielding wire 130 is arranged on the periphery of the first chip 121. The height of the shielding wire 130 is slightly higher than the height of the first chip 121. If the first chip 121 is a quadrilateral, the shielding wire 130 can be arranged on any one side, two sides, three sides or four sides of the four sides of the periphery of the first chip 121. The shielding wire 130 can be a single particle on the periphery of the first chip 121, and the shape of the multiple shielding wires 130 distributed on the periphery of the first chip 121 can be roughly straight, L-shaped, C-shaped, U-shaped, V-shaped, square-shaped or other shapes. The distribution of multiple shielding wires 130 on each side of the first chip 121 can be a straight line, oblique line, broken line, wavy line, arc or other arbitrary curves, which are not specifically limited here.

[0095] The electromagnetic shielding manufacturing method and packaging structure 100 provided in embodiments of the present invention can reduce the number of wire bonding pads on substrate 110. By encapsulating first wire loop 131 with first colloid 132, when shielding wire 130 is formed by breaking first wire loop 131, the reliability and stability of shielding wire 130 are improved, thereby enhancing electromagnetic shielding effectiveness and packaging quality. By pressing semi-cured plastic package 150 containing shielding wire 130 onto substrate 110, the process is simplified and packaging efficiency and quality are improved.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some or all of the technical features therein. Any modifications, equivalent replacements, improvements, etc. made should be included in the scope of protection of the present invention.

Claims

1. A method for producing an electromagnetic shield, characterized in that: include: providing a substrate; The substrate is provided with a first pad and a second pad, the first pad is grounded; the second pad is used for mounting the first chip; forming a shielding line on the substrate; wherein a first arc is formed on the substrate; forming a first colloid covering the first arc; disconnecting the first arc and using the first arc connected to the first pad as a shielding line; the shielding line is located at the periphery of the first chip; Plastic-sealing the first chip to form a plastic-sealed body; A first metal layer electrically connected to the shielding wire is formed on the plastic package body.

2. The electromagnetic shielding manufacturing method according to claim 1, characterized in that: The step of forming a shielding line on the substrate comprises: Mounting a bonding portion on the substrate; the bonding portion covers the second pad; forming a first arc; one end of the first arc is connected to the first pad, and the other end is connected to the bonding portion; forming a first colloid covering the first arc; The first wire arc is disconnected, the first wire arc not connected to the first pad is removed, and the first wire arc connected to the first pad is used as the shielding wire.

3. The electromagnetic shielding manufacturing method according to claim 2, characterized in that: After the step of forming a shielding line on the substrate, the method further includes: removing the bonding portion to expose the second pad; The first chip is mounted on the second pad.

4. The electromagnetic shielding manufacturing method according to claim 2, characterized in that: The step of mounting the wire bonding portion on the substrate includes: forming a second metal layer on a side of the bonding portion away from the substrate; In the step of forming a first arc, one end of the first arc away from the first pad is connected to the second metal layer.

5. The electromagnetic shielding manufacturing method according to claim 2, characterized in that: The substrate further includes a third pad connected to the ground, and the first pad and the third pad are both provided on the periphery of the first chip; The step of forming a shielding line on the substrate comprises: forming a first arc connecting the first pad and the bonding portion; forming a second arc connected to the third pad; an end of the second arc away from the third pad is located between the third pad and the bonding portion; The first arc and the second arc are disconnected respectively; the first arc connected to the first pad and the second arc connected to the third pad serve together as the shielding line.

6. The electromagnetic shielding manufacturing method according to claim 2, characterized in that: The step of breaking the first wire arc includes grinding the bonding portion to remove the first wire arc that is higher than the bonding portion.

7. The electromagnetic shielding manufacturing method according to claim 6, characterized in that: The substrate is further provided with a fourth pad, and before the step of disconnecting the first arc, the method further includes: A protection layer is mounted on the fourth pad, and a thickness of the protection layer is lower than a thickness of the bonding portion.

8. The electromagnetic shielding manufacturing method according to claim 7, characterized in that: The step of breaking the first wire arc includes: grinding the wire bonding portion until it is flush with the protection layer, and grinding away the first wire arc that is higher than the protection layer.

9. The electromagnetic shielding manufacturing method according to claim 7, characterized in that: After the step of breaking the first arc, the method further includes: removing the protective layer.

10. The electromagnetic shielding manufacturing method according to claim 9, characterized in that: After the step of removing the protective layer, the method further includes: mounting a second chip on the fourth pad.

11. The electromagnetic shielding manufacturing method according to any one of claims 1 to 10, characterized in that: Before the step of plastic-sealing the first chip to form a plastic package, the method further includes: removing the first colloid.

12. The electromagnetic shielding manufacturing method according to claim 1, characterized in that: The step of forming a shielding line on the substrate comprises: Mounting a first chip on the substrate; electrically connecting the first chip and the second pad; forming a bonding portion on a side of the first chip away from the substrate; forming a first arc; one end of the first arc is connected to the first pad, and the other end is connected to the bonding portion; forming a first colloid covering the first arc; The first wire arc is disconnected, the first wire arc not connected to the first pad is removed, and the first wire arc connected to the first pad is used as the shielding wire.

13. The electromagnetic shielding manufacturing method according to claim 12, characterized in that: The step of forming a bonding portion on a side of the first chip away from the substrate includes: Mounting a first cover on the substrate, wherein the first cover covers the first chip; the first cover serves as the bonding portion; Alternatively, a second colloid higher than the first chip is formed on the periphery of the first chip, and a first cover is mounted on the second colloid.

14. The electromagnetic shielding manufacturing method according to claim 13, characterized in that: The first cover is provided with a second metal layer, and the first wire arc connects the first pad and the second metal layer; Alternatively, the first cover plate is provided with a third metal layer, and the first wire arc connects the first pad and the third metal layer.

15. The electromagnetic shielding manufacturing method according to claim 13, characterized in that: After the step of forming a shielding line on the substrate, the method further includes: Remove the first cover body, or remove the first cover plate.

16. The electromagnetic shielding manufacturing method according to any one of claims 13 to 15, characterized in that: Before the step of plastic-sealing the first chip to form a plastic package body, the following steps are included: The second colloid is removed.

17. A method for manufacturing an electromagnetic shield, characterized in that: include: Providing a plastic package with shielded wires; Providing a substrate with a first chip mounted thereon; wherein the substrate is provided with a first grounded pad; Covering the plastic package body to the substrate; wherein the plastic package body covers the first chip, and the shielding wire is electrically connected to the first pad and is located at the periphery of the first chip; A first metal layer electrically connected to the shielding line is formed on a side of the plastic package away from the substrate.

18. The electromagnetic shielding manufacturing method according to claim 17, characterized in that: The steps of providing a plastic package having a shielded wire include: Provide the first vehicle; Mounting a wire bonding unit on the first carrier; forming a third arc connecting the first carrier and the bonding portion; forming a third colloid covering the third arc; disconnecting the third wire arc, removing the third wire arc not connected to the first pad, and using the third wire arc connected to the first pad as the shielding wire; forming a semi-cured plastic package covering the shielding wire and the bonding portion on the first carrier; removing the first carrier; The bonding portion is removed to form a groove on the plastic package body.

19. The electromagnetic shielding manufacturing method according to claim 18, characterized in that: In the step of covering the plastic package body with the substrate, the first chip is accommodated in the groove.

20. The electromagnetic shielding manufacturing method according to claim 17, characterized in that: The step of covering the plastic package body with the substrate includes: Covering the semi-cured plastic package body on the substrate in a laminating manner; Pressing the semi-cured plastic package body to solidify the plastic package body; The plastic package body is ground to expose the shielding wire from the surface of the plastic package body.

21. The electromagnetic shielding manufacturing method according to claim 18, characterized in that: The first carrier is provided with a second wire bonding pad, and the step of mounting a wire bonding portion on the first carrier includes: Mounting a wire bonding unit on the first carrier; Mounting a protective layer on the first carrier; wherein the thickness of the protective layer is smaller than the thickness of the bonding portion; In the step of forming a third wire arc connecting the first carrier and the wire bonding portion: the third wire arc connects the second wire bonding pad and the wire bonding portion; The step of breaking the third arc includes: grinding the third arc and the bonding portion until they are flush with the protective layer; The step of removing the first carrier then includes: The bonding portion and the protective layer are removed to form the groove on the plastic package body.

22. The electromagnetic shielding manufacturing method according to claim 18, characterized in that: In the step of removing the first carrier, the second wire bonding pad on the first carrier is separated from the first carrier, and the second wire bonding pad is connected to the shielding wire as a whole.

23. The electromagnetic shielding manufacturing method according to claim 17, characterized in that: The steps of providing a plastic package having a shielded wire include: Providing a second carrier; the second carrier has a protrusion; forming a shielding line on the second carrier, wherein a fourth arc is formed connecting the second carrier and the protruding portion, and the fourth arc is disconnected to form the shielding line; forming a semi-cured plastic package covering the shielding wire and the protruding portion on the second carrier; The second carrier is removed to form a groove on the plastic package body, wherein the position of the groove corresponds to the position of the protrusion.

24. The electromagnetic shielding manufacturing method according to claim 23, characterized in that: The protrusion includes a first protrusion and a second protrusion, wherein the height of the first protrusion is higher than the height of the second protrusion; The step of forming a shielding line on the second carrier includes: forming a fourth arc connecting the second carrier and the first protrusion; The fourth wire arc is disconnected; and the fourth wire arc and the first protrusion are ground until they are flush with the second protrusion to form the shielding wire.

25. The electromagnetic shielding manufacturing method according to claim 23, characterized in that: In the step of removing the second carrier, the third wire bonding pad on the second carrier is separated from the second carrier, and the third wire bonding pad is connected to the shielding wire as a whole.

26. A packaging structure, characterized in that: The packaging structure is manufactured by the electromagnetic shielding manufacturing method according to any one of claims 1 to 25; the packaging structure comprises: a substrate, wherein the substrate is provided with a shielding wire; A first device and a second device are mounted on the substrate, and the first device and the second device are electrically connected to the substrate respectively; the shielding line is provided between the first device and the second device; a plastic package body connected to the substrate and covering the first device and the second device; A first metal layer is provided on the surface of the plastic package body, the first metal layer is connected to an end of the shielding wire away from the substrate; and at least one of the first metal layer and the shielding wire is grounded.

27. The packaging structure according to claim 26, wherein: The first metal layer is provided on a portion of the surface of the plastic package body; the projection of the first metal layer on the substrate covers the first device; the projection of the first metal layer on the substrate is staggered with the second device.

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