Apparatus and method for manufacturing power semiconductor component

Abstract

The invention relates to an apparatus and a method for manufacturing a power semiconductor component. The device has: a receiving unit (54) for receiving a component base (50) to be sintered, which component base has a lower contact module (42), a power semiconductor and a sintering paste (40a, 40b) introduced between the lower contact module and the power semiconductor; a ram unit (44) having a ram (46a, 46b) for applying a predefined pressing force to the component base in order to produce a sintered connection between the lower contact module and the power semiconductor; and a measuring unit (56) for determining the height of the upper side of the power semiconductor on the lower contact module after sintering. The invention also relates to a power semiconductor assembly (18).

Description

Technical Field

[0001] The invention relates to a device for producing a power semiconductor component having a power semiconductor with double-sided contacting. The invention also relates to a method and a power semiconductor component. Background Art

[0002] The power electronics of electric and hybrid vehicles transfer traction energy from the battery to the electric motor, converting the direct current into alternating current. This is accomplished by providing a converter, or perhaps an inverter, or traction converter. In particular, multiple transistors or other power semiconductors are typically used, combined into a power semiconductor module and switched on and off at short, regular intervals. MOSFETs (metal oxide semiconductor field effect transistors) or IGBTs (insulated gate bipolar transistors) are also commonly used as power semiconductors. In the on state, the battery current is transferred to the motor (conduction phase). These high-frequency switching processes produce a voltage change in the AC voltage, which can then be converted into traction energy in the electric motor. To improve conductivity, multiple power semiconductors are often connected in parallel.

[0003] Such power semiconductor modules or power semiconductors switch high currents, and the power semiconductors generate high temperatures. Active or passive cooling systems are often used to dissipate heat. In these cooling systems, the heat from the power semiconductors is dissipated to another medium via a heat sink. Therefore, corresponding components for inverters include, in addition to the power semiconductors themselves, appropriately designed contact modules for electrical and thermal contacting of the power semiconductors, and often corresponding cooling structures for dissipating heat. This creates a heat conduction path from the power semiconductors to the coolant. This heat conduction path (thermal path) also typically includes an electrically insulating layer (e.g., a ceramic layer) to electrically decouple the cooler or cooling structure.

[0004] In previous implementations, components are often provided in which single-sided or double-sided contacts are provided for the individual power semiconductors for heat dissipation.

[0005] A current approach in this context is to use double-sided cooling of power semiconductors to improve heat dissipation. In this context, DE 10 2016 121 801 A1 discloses an assembly, a vehicle, an application method, and a method for manufacturing the assembly. The assembly includes at least one electronic chip. Furthermore, the assembly includes at least one first heat sink, to which the at least one electronic chip is fastened via a first connection. Furthermore, the assembly includes a second heat sink, which is fastened to or above the at least one electronic chip via a second connection. Finally, the assembly includes an encapsulation material that encapsulates at least a portion of the at least one electronic chip, a portion of the first heat sink, and a portion of the second heat sink. The first connection is designed to exhibit a different melting point than the second connection.

[0006] A disadvantage of previous implementations in this area is that components with double-sided contacting are generally complex to produce. Multi-stage production methods, in particular, often result in higher costs or more complex production. The dimensional differences of power semiconductors due to manufacturing tolerances create special requirements. Summary of the Invention

[0007] Based on this, the object of the present invention is to provide an efficient implementation for producing double-sided contact-connected power semiconductor components. Flexible yet efficient manufacturability of the components should be achieved with regard to the dimensioning and design of the power semiconductor components to be produced. Furthermore, the error susceptibility should be reduced.

[0008] To achieve this object, the present invention relates in a first aspect to a device for producing a power semiconductor component having a double-sided contact-connected power semiconductor, the device comprising:

[0009] a receiving unit for receiving a component base to be sintered, the component base having a lower contact module, a power semiconductor, and a sintering paste inserted between the lower contact module and the power semiconductor;

[0010] a press head unit having a press head for applying a predefined pressing force to the component base in order to produce a sintered connection between the lower contact module and the power semiconductor; and

[0011] A measuring unit is provided for determining the height of the top side of the power semiconductor above the lower contact module after sintering.

[0012] In another aspect, the invention relates to a method for producing a power semiconductor component having a double-sided contact-connected power semiconductor, the method comprising the following steps:

[0013] Accommodating a component base to be sintered in the accommodation unit, the component base having a lower contact module, a power semiconductor, and a sintering paste introduced between the lower contact module and the power semiconductor;

[0014] applying a predefined pressing force to the component base in order to produce a sintered connection between the lower contact module and the power semiconductor by means of the pressing head of the pressing head unit; and

[0015] The height of the top side of the power semiconductor above the lower contact module after sintering is determined using a measuring unit.

[0016] Finally, in one aspect, the present invention also relates to a power semiconductor component having a plurality of power semiconductors, which are fastened between a lower contact module and an upper contact module via a sintered connection, wherein:

[0017] At least one spacer is arranged between at least one power semiconductor and the upper contact module for compensating for height tolerances of the plurality of power semiconductors; and

[0018] The power semiconductor component is preferably produced by means of a device as described above and / or in a method as described above.

[0019] Preferred embodiments of the present invention are described in the dependent claims. It goes without saying that the features described above and those yet to be explained below can be used not only in the combination described in each case, but also in other combinations or alone without departing from the scope of the present invention. The described apparatus, method, and power semiconductor component can be implemented in particular according to the embodiments of the apparatus, method, and power semiconductor component described in the dependent claims.

[0020] According to the present invention, in order to produce a power semiconductor component having at least one double-sided contacted power semiconductor, a component base is first accommodated in a receiving unit. The component base comprises a lower contact module, on which the power semiconductor is arranged, wherein a sintering paste is introduced between the lower contact module and the power semiconductor. During the sintering process, the pressure required for this is applied by means of a pressing head in order to produce a sintered connection between the lower contact module and the power semiconductor. The pressing head of the pressing head unit generates a predefined pressing force, which serves as a process parameter of the sintering process. It is provided that after the sintering process, the height of the upper side of the power semiconductor above the lower contact module is measured by means of a measuring unit. This allows the thickness of the power semiconductor and the sintered connection to be determined.

[0021] Power semiconductors (semiconductor chips) of planar construction are used. These power semiconductors often have different heights or thicknesses due to manufacturing tolerances. In other words, the power semiconductors used are therefore often not of the same thickness. In the case of double-sided contact, these different heights can lead to some challenges. This is especially true when multiple power semiconductors are used on the same lower contact module or in the same power semiconductor assembly. When, for example, two power semiconductors of different thicknesses are used in the same assembly, height compensation must be performed in order to be able to mount the upper contact module. For this height compensation, spacers (spacers) can be provided to compensate for possible height differences. When using a single power semiconductor, height compensation may also be required in order to achieve a predefined total height or not be higher or lower than a predetermined maximum or minimum value. For this purpose, according to the present invention, the height of the upper side of the power semiconductor on the lower contact module is known.

[0022] Compared to previous implementations, the device for manufacturing power semiconductor components proposed according to the present invention also includes a measuring unit for automatically determining the height of the upper side of the power semiconductor above the lower contact module. This automatic and integrated height determination allows for compensation during manufacturing, for example, using appropriate spacers. The required dimensions of the spacers can be readily determined. Compared to previous implementations with separate determination of the dimensions of the spacers, efficiency gains are achieved. Costs can be saved and the process can be accelerated. Compared to previous implementations using individual power semiconductors in a power semiconductor component, a predefined height can be achieved, which simplifies further processing or handling of the power semiconductor component.

[0023] In a preferred embodiment, the measuring unit includes a measuring unit for interferometrically measuring the distance between the measuring unit and the top side of the power semiconductor. Lasers enable high-precision distance determination at reasonable cost. Furthermore, stable measurements are possible, reflecting varying installation conditions. This results in an accurate, cost-effective, and achievable measurement of the distance.

[0024] In a preferred design, the laser is configured to measure the depth of insertion of the indenter. Preferably, the laser is aligned with a measuring surface at the indenter parallel to the indenter direction of the indenter. In particular, the measuring surface at the upper side of the indenter can be aligned here. When this is taken as a starting point, i.e., the length of the indenter and the dimensions of the indenter are known, it is sufficient to measure the depth of insertion of the indenter. This is because the predefined pressing force is directly related to the height of the upper side of the power semiconductor on the lower contact module. This is particularly applicable when a lower contact module with a constant and known thickness is taken as a starting point. By using the measuring surface at the indenter with the laser direction oriented parallel to the indenter direction, a design solution that is not prone to errors and can be simply and effectively implemented is obtained.

[0025] In a preferred embodiment, the ram unit is configured to apply a predefined pressing force to the ram via a pressurized medium, preferably air. In this regard, the ram unit can be configured to introduce the pressure acting on the medium. This pressure is then transmitted to the ram and thereby applied as a predefined pressing force to the component base to be sintered. The use of air additionally enables measurement with a laser through an air-filled space. In other words, the laser can be arranged so that interferometric measurements are performed within the pressurized space. This results in efficient measurement while maintaining simple mechanical feasibility.

[0026] In a preferred embodiment, the pressure head unit includes a pressure chamber arranged above the pressure head for accommodating the medium. The measuring unit is configured to perform measurements within the pressure chamber and is preferably arranged above the pressure chamber. In other words, it can be provided that the measurement is performed within the pressure chamber. It is particularly advantageous if the laser is arranged within the pressure chamber and is aligned with a measuring surface on the pressure head, in particular above the pressure head. Measurements in the pressure chamber allow for efficient and accurate measurement of the height of the top side of the power semiconductor. Furthermore, the risk of contamination and resulting inaccurate measurements is minimal.

[0027] In a preferred design, the measuring unit includes an optical detection unit for photographing the optical coding on the pressure head and is configured to obtain the height based on the photographed optical coding. Additionally or alternatively, the measuring unit includes an ultrasonic unit for implementing ultrasonic distance measurement and is configured to obtain the height based on ultrasonic distance measurement. As an alternative or supplement to the use of a laser, an optical detection unit can also be provided. In particular, the optical coding can be photographed with the aid of a camera. The photographed optical coding can then be used as the basis for obtaining the height. For example, lines or other patterns can be photographed and evaluated with the aid of corresponding image processing algorithms. As an alternative or supplement to this, ultrasonic distance measurement can also be performed. Ultrasonic distance measurement can also accurately measure the distance at a lower cost.

[0028] In a preferred embodiment, the receiving unit is configured to receive a component base to be sintered, the component base comprising a lower contact module, two or more power semiconductors, and a sintering paste introduced between the lower contact module and the two or more power semiconductors. The pressing head unit comprises a pressing head for each power semiconductor and is configured to apply a predefined pressing force to each of the two or more power semiconductors to produce a sintered connection. The measuring unit is configured to determine the height of the top side of the two or more power semiconductors above the lower contact module after sintering. In an advantageous embodiment of the device according to the present invention, multiple power semiconductors can be used on a common lower contact module. Preferably, a separate pressing head is provided for each power semiconductor, and the height is determined accordingly. Manufacturing tolerances and thus different thicknesses may occur between different power semiconductors of the two or more power semiconductors. To compensate for these or initially detect them, the measuring unit is configured to determine the different heights of the top side. This results in efficient handling of power semiconductor components comprising multiple power semiconductors with double-sided contact.

[0029] In a preferred design, the measuring unit for measuring the depth of insertion of multiple indenters includes multiple lasers assigned to the multiple indenters. Alternatively, the measuring unit for measuring the depth of insertion of multiple indenters includes a common laser having a variable orientation, in particular a variable orientation achieved by the mobility of the common laser. For different height measurements, multiple lasers can be provided on the one hand, wherein each laser is assigned to each indenter. Alternatively, a common laser with corresponding mobility can also be provided for this purpose and different heights can be measured sequentially by the laser. Different light paths can also be achieved by corresponding mirror structures, and the mobility only involves the adjustment of the mirror. Effective and cost-effective measurement of different heights is obtained. In addition, accurate height detectability is also obtained.

[0030] In a preferred embodiment of the method according to the invention, the method includes a step of placing spacers on the component base after sintering in a further sintering step. The thickness of the spacers is known based on the known height of the upper side of the power semiconductor, thereby enabling a defined total thickness of the component base and the spacers placed thereon to be achieved. In particular, provision can be made for the placement of spacers within the manufacturing method. The spacers are selected depending on the known height of the upper side of the power semiconductor or their thickness is determined based thereon. For example, spacers from a predefined selection set can be used. Alternatively, however, the corresponding spacers can also be manufactured separately, for example by applying corresponding layers of corresponding thicknesses using a suitable plastic application process. A defined total thickness is achieved by placing the spacers. Effective further processability is achieved. Furthermore, costs are reduced by eliminating subsequent re-measurements.

[0031] In a preferred embodiment, the method includes a step of attaching the upper contact module to the component base and to the spacers attached thereto in a further sintering step. In particular, provision can be made for the upper contact module to be attached for sealing purposes, wherein a defined height is already achieved and no further tolerance compensation is required. This results in the efficient production of power semiconductor components with double-sided contact-connected power semiconductors.

[0032] In this document, a power semiconductor assembly refers particularly to a power semiconductor module or assembly for use in an inverter or inverter structure. Multiple power semiconductors are typically combined to form a power semiconductor module, which in turn may include multiple power semiconductor assemblies. A power semiconductor particularly corresponds to an electronic chip (semiconductor chip) having one or more integrated switching circuit components. For example, a MOSFET or IGBT may be used as a power semiconductor. A power semiconductor is particularly a semiconductor switch. The terms "lower" and "upper" with respect to a component or module are used for illustrative purposes and distinction only. It goes without saying that the power semiconductor assemblies can also be arranged opposite or inverted. The same applies to the distinction between "first" and "second." A first side and a second side, or a first module and a second module, therefore particularly refer to two different sides or modules. The power semiconductor assembly according to the present invention is particularly suitable for use in vehicles. In this document, determining the height particularly refers to directly or indirectly measuring the thickness of the power semiconductor. This thickness often varies between different power semiconductors due to manufacturing tolerances. Measuring this thickness directly or indirectly allows for thickness compensation. This is particularly important when multiple power semiconductors need to be contacted on both sides. However, even in the case of individual power semiconductors, advantages are achieved in further processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The present invention will be described and explained in more detail below with the help of some selected embodiments and in conjunction with the accompanying drawings, wherein:

[0034] Figure 1 shows a schematic diagram of a vehicle having an inverter and an assembly according to the invention;

[0035] Figure 2 A schematic diagram showing the heat path from the semiconductor to the cooling medium in a prior art assembly;

[0036] Figure 3 A schematic diagram illustrating the problems associated with power semiconductors of varying thickness;

[0037] Figure 4 A schematic diagram of a device for producing a power semiconductor component having a double-sided contact-connected power semiconductor, without a measuring unit, is shown;

[0038] Figure 5 A schematic diagram of an apparatus for producing a power semiconductor component having a double-sided contact-connected power semiconductor according to the present invention is shown;

[0039] Figure 6 A schematic diagram of a power semiconductor component having a double-sided contact-connected power semiconductor and a spacer according to the present invention is shown;

[0040] Figure 7 A schematic diagram showing an alternative embodiment of an apparatus for manufacturing a power semiconductor component according to the present invention; and

[0041] Figure 8 A schematic diagram of the method according to the invention is shown. DETAILED DESCRIPTION

[0042] exist Figure 1 FIG schematically illustrates a vehicle 10 having an inverter 12 according to the present invention. The inverter 12 is arranged between a battery 14 and an electric motor 16 of the vehicle 10 to convert the direct current of the battery 14 into the alternating current required by the electric motor 16. The inverter 12 typically includes a plurality of power semiconductor components 18, wherein, for example, a plurality of power semiconductor components 18 can each be combined into a power semiconductor module, and a plurality of power semiconductor modules can be provided. The power semiconductor components 18 each include a power semiconductor or semiconductor switch, which can be designed in particular as a MOSFET. It goes without saying that the figures are schematic and do not illustrate components in order to avoid obstructing the overview.

[0043] The unique feature of current inverters is that the semiconductors (power semiconductors) that are being switched on must be actively cooled in order to dissipate switching losses and power losses. To dissipate the losses, a heat conduction path is created from the semiconductors to the cooling medium. In components of the prior art, this heat path includes, for example, Figure 2 Parts shown.

[0044] To dissipate heat, power semiconductors 24 are arranged on an upper copper layer 26, which in turn is arranged on a ceramic layer 28 and a lower copper layer 30. The structure consisting of upper copper layer 36, lower copper layer 30, and ceramic layer 28 is also referred to herein as a directly bonded copper (DBC) structure. The DBC structure is arranged on a cooling plate 32 (cooling element), which is in contact with a coolant 34. The thermal path from power semiconductors 24 to coolant 34 is formed via various components, with the DBC structure being an electrically insulating layer.

[0045] Thermal resistance, i.e. Figure 2 The sum of the different thermal resistances of the individual components in a semiconductor strongly affects the performance of the semiconductor. Figure 2 As an alternative to the shown meandering structure of the cooling plate 32 , a pin-fin structure is also generally used.

[0046] To optimize the heat path, thermal resistance must be minimized. This includes thermal resistances required for electrical reasons, such as the insulating ceramic layer 28, and thermal resistances required for manufacturing technology. The thermal resistance of the copper layers 26 and 30 is particularly referred to as the thermal resistance required for manufacturing technology. These are required for construction and connection technology, and their thickness can be optimized for heat conduction. Furthermore, the thermal resistance required for manufacturing technology is the thermal resistance of the cooling plate 32, which cannot be freely optimized for heat conduction due to manufacturing and installation constraints. Finally, the transition between the cooling plate 32 and the coolant 34 serves as the thermal resistance required for manufacturing technology, which is also greater than the thermal resistance required for technical reasons due to manufacturing and installation constraints.

[0047] Connections between various components, such as cooling plates and copper, and also between copper and power semiconductors, are increasingly being established using sintered connections. Sintered connections are distinguished by low thermal resistance and high cycle stability. To ensure the high quality of the sintered connections, special tools that can compensate for height are required. In power semiconductor assemblies with double-sided contact-connected power semiconductors, soldered connections are often necessary to compensate for tolerances.

[0048] exist Figure 3The figure schematically shows two power semiconductors 24 of different thicknesses (power semiconductors with different heights). Power semiconductors or semiconductor chips often have different thicknesses due to manufacturing tolerances. During sintering, tolerances of the workpieces to be sintered must be compensated. Despite the varying thicknesses, a pressure that is as constant as possible must be applied to the tool to produce a good sintered connection.

[0049] There are many possible solutions to achieve this. A tool that can compensate for this height difference or thickness difference is needed. Figure 4 shows a possible implementation of the prior art. In particular, a device 36 for producing a power semiconductor component having a double-sided contact-connected power semiconductor is shown. In the illustrated embodiment, a power semiconductor component having two power semiconductors 38a, 38b is produced. The device 36 includes a pressure head unit 44 having two pressure heads 46a, 46b, which are movable in the Y direction. The actual pressing force is achieved via a liquid or gaseous medium, which is introduced on one side of the device 36. In the illustrated embodiment, a pressure chamber 48 is provided for this purpose. Sintering paste 40a, 40b is applied to the lower contact module 42 at two locations. In the illustrated embodiment, the component base 50 to be sintered includes the lower contact module 42, the two power semiconductors 38a, 38b, and the applied sintering paste 40a, 40b. A receiving unit 54 is used to accommodate the component base 50.

[0050] In order to achieve a double-sided sintered connection for double-sided cooling during this sintering process, height differences or thickness differences must be compensated, preferably by spacers (spacers). This requires measuring these height differences as accurately as possible. According to the present invention, it is proposed to determine the height of the upper side of the power semiconductors 38a, 38b above the lower contact module 42 after sintering. In this case, Figure 5 An embodiment of an apparatus 52 according to the present invention for producing a power semiconductor component having double-sided contact-connected power semiconductors is schematically illustrated. An embodiment is again illustrated in which a power semiconductor component having two power semiconductors 38a, 38b is produced. In particular, the apparatus 52 can be configured as a sintering press or as part of such a sintering press. The apparatus 52 includes a receiving unit 54 for receiving a component base 50 to be sintered. The component base 50 includes a lower contact module 42 and, in the illustrated embodiment, two power semiconductors 38a, 38b with associated sintering pastes 40a, 40b, respectively. Furthermore, the apparatus 52 includes a pressing head unit 44 having two pressing heads 46a, 46b, which are configured to apply a predefined pressing force to the component base 50 to produce a sintered connection. In the illustrated embodiment, the pressing head unit 44 includes a pressure chamber 48, into which a medium, particularly compressed air, is received to apply the pressing force to the pressing heads 46a, 46b.

[0051] Furthermore, a measuring unit 56 is provided, which is configured to determine the height of the upper sides of the two power semiconductors 38a, 38b above the lower contact module 42 after sintering. In the illustrated embodiment, the measuring unit 56 includes two lasers 58a, 58b, which are configured to interferometrically measure the distance between the measuring unit 56 and the upper sides of the power semiconductors 38a, 38b. It is also shown that the lasers can be configured to emit a laser beam into the pressure chamber 48 onto a measuring surface mounted on the upper sides of the indenters 46a, 46b. In this regard, the measuring unit 56 is thus configured to perform measurements within the pressure chamber 48. The insertion depth of the indenters 46a, 46b is measured using the two lasers 58a, 58b.

[0052] According to the present invention, the height or height difference can be determined very accurately. This difference can be compensated for in a subsequent, further sintering step for contacting the power semiconductors 38a, 38b with the upper contact module (not shown). Because the two indenters 46a, 46b are guided in the tool, non-parallelism is also compensated for. The measurement is preferably performed during the sintering process. The second sintering step for contacting the upper contact module can then be performed.

[0053] It goes without saying that as Figure 5 Alternatively to the embodiment shown, a power semiconductor assembly with a single power semiconductor or a larger number of power semiconductors can also be used. A different number of indenters and / or lasers can be provided in a corresponding manner. Furthermore, multiple indenters can also be measured by a single laser.

[0054] exist Figure 6 , in this case, a power semiconductor component 18 according to the invention, produced, for example, using the aforementioned apparatus, is shown. In the illustrated embodiment, the power semiconductor component 18 comprises a lower contact module 42, two power semiconductors 38a, 38b, an upper contact module 62, and a spacer 64. Sintered connections 66 are provided between each of these components.

[0055] Thus, with the height measurement achieved according to the invention, the spacer can be inserted, for example, into the top side of the power semiconductor and connected / joined by a sintering process. This makes it possible to produce a predefined maximum height.

[0056] exist Figure 7An alternative embodiment of the device 52 according to the invention is schematically shown in FIG. In other sintering presses, tolerance compensation in the Y direction is performed by a spring (e.g. a coil spring) forming the ram of the ram unit 44. Here, too, a corresponding height measurement can be performed, for example, by means of a laser through the spring. Figure 7 The reference numerals in Figure 5 The lasers 58a, 58b of the measuring unit 56 are oriented such that the distance measurement is performed through the springs 68a, 68b.

[0057] In another alternative embodiment, instead of using a separate laser for each indenter, a single shared laser can be used. This shared laser can be moved between the indenters, for example, using a suitable device. Other distance measurement methods, such as ultrasonic or optical measurement methods, can also be used instead of lasers. The method proposed according to the present invention can also be applied to the sintering of larger assemblies, such as entire modules.

[0058] exist Figure 8 Schematically depicted in the figure is a method for manufacturing a power semiconductor component according to the present invention having a double-sided contact power semiconductor. The method comprises the step of accommodating S10 a component base to be sintered. The method further comprises the step of applying S12 a predefined pressing force to the component base. In addition, the method comprises the step of determining S14 the height of the upper side of the power semiconductor above the lower contact module. In the illustrated embodiment, the method further comprises the optional steps of placing S16 a spacer on the component base and placing S18 an upper contact module on the component base. The method can be implemented in software, for example, as a control method for a corresponding manufacturing device. In particular, the method can be a method for manufacturing a power semiconductor component.

[0059] The present invention is fully described and explained with the aid of the drawings and the description. The description and explanation are to be understood as illustrative and non-restrictive. The present invention is not limited to the disclosed embodiments. Other embodiments and variations will be apparent to those skilled in the art upon use of the present invention and careful analysis of the drawings, the disclosure, and the following claims.

[0060] In the claims, the words "comprising" and "having" do not exclude the presence of additional elements or steps. The indefinite article "a" or "an" does not exclude the presence of a plurality. A single element or unit may perform the functions of several of the units mentioned in the claims. The elements, units, interfaces, devices, and systems may be implemented partially or completely in hardware and / or software. The mere mention of certain measures in several different dependent claims is not to be understood as meaning that a combination of these measures cannot be used to advantage. The computer program may be stored / run on a non-volatile data carrier, such as an optical memory or a semiconductor disk drive (SSD). The computer program may be run together with and / or as part of the hardware, for example via the Internet or via a wired or wireless communication system. The reference numerals in the claims are not to be understood as restrictive.

[0061] Reference Signs List

[0062] 10 vehicles

[0063] 12 Inverters

[0064] 14 batteries

[0065] 16 motors

[0066] 18 Power semiconductor components

[0067] 24 Power Semiconductors

[0068] 26 copper layer

[0069] 28 ceramic layers

[0070] 30 lower copper layer

[0071] 32 cooling plates

[0072] 34 Cooling medium

[0073] 36 Prior Art Devices

[0074] 38a, 38b power semiconductors

[0075] 40a, 40b sintering paste

[0076] 42 lower contact module

[0077] 44 head unit

[0078] 46a, 46b pressure head

[0079] 48 pressure chambers

[0080] 50 component base

[0081] 52 devices

[0082] 54 accommodation units

[0083] 56 measurement units

[0084] 58a, 58b lasers

[0085] 62 upper contact module

[0086] 64 spacer retainers

[0087] 66 sintered layers

[0088] 68a, 68b springs

Claims

1. A device (52) for producing a power semiconductor component (18) having a power semiconductor (24, 38a, 38b) with double-sided contact, the device comprising: a receiving unit (54) for receiving a component base (50) to be sintered, the component base having a lower contact module (42), a power semiconductor, and a sintering paste (40a, 40b) introduced between the lower contact module and the power semiconductor; a pressing head unit (44) having pressing heads (46a, 46b) for applying a predefined pressing force to the component base in order to produce a sintered connection between the lower contact module and the power semiconductor; and A measuring unit (56) is used to determine the height of the upper side of the power semiconductor above the lower contact module after sintering.

2. The device (52) according to claim 1, wherein The measuring unit (56) has a laser (58a, 58b) for interferometrically measuring the distance between the measuring unit and the top side of the power semiconductor (24, 38a, 38b).

3. The device (52) according to claim 2, wherein The laser (58a, 58b) is designed to measure the insertion depth of the indenter (46a, 46b) and is preferably aligned parallel to the indenter direction of the indenter at a measuring surface on the indenter, in particular at the upper side of the indenter.

4. The device (52) according to any one of the preceding claims, wherein The pressure head unit (44) is designed to exert a predefined pressing force on the pressure heads (46a, 46b) via a pressurized medium, preferably air.

5. The device (52) according to claim 4, wherein The pressure head unit (44) includes a pressure chamber (48) arranged above the pressure heads (46a, 46b) for accommodating the medium; and The measuring unit (56) is designed to carry out measurements in the pressure chamber and is preferably arranged above the pressure chamber.

6. The device (52) according to any one of the preceding claims, wherein The measuring unit (56) includes an optical detection unit for photographing the optical code on the indenter (46a, 46b) and is configured to obtain the height based on the photographed optical code; and / or The measuring unit (56) comprises an ultrasonic unit for carrying out ultrasonic distance measurements and is designed to determine the height based on the ultrasonic distance measurements.

7. The device (52) according to any one of the preceding claims, wherein The receiving unit (54) is configured to receive a component base (50) to be sintered, the component base having a lower contact module (42), two or more power semiconductors (24, 38a, 38b), and a sintering paste (40a, 40b) introduced between the lower contact module and the two or more power semiconductors; The pressing head unit (44) comprises a pressing head (46a, 46b) for each power semiconductor and is configured to apply the predefined pressing force to each of the two or more power semiconductors in order to respectively produce a sintered connection; and The measuring unit (56) is designed to determine the height of the upper sides of two or more power semiconductors above the lower contact module after sintering.

8. The device (52) according to claim 7, wherein The measuring unit (56) comprises a plurality of lasers (58a, 58b) assigned to a plurality of indenters (46a, 46b) for measuring the insertion depth of the plurality of indenters; or comprises a common laser having a variable orientation, in particular a variable orientation achieved by the mobility of the common laser.

9. A method for producing a power semiconductor component (18) having a power semiconductor (24, 38a, 38b) with double-sided contact, the method comprising the following steps: Accommodating (S10) a component base (50) to be sintered in an accommodating unit (54), the component base having a lower contact module (42), a power semiconductor, and a sintering paste (40a, 40b) introduced between the lower contact module and the power semiconductor; applying (S12) a predefined pressing force to the component base in order to produce a sintered connection between the lower contact module and the power semiconductor by means of the pressing nibs (46a, 46b) of the pressing nib unit (44); and The height of the upper side of the power semiconductor above the lower contact module after sintering is determined ( S14 ) using a measuring unit ( 56 ).

10. The method according to claim 9, comprising: A step of attaching (S16) a spacer (64) to the component base (50) by a further sintering step after the sintering, wherein: Based on the known height of the top side of the power semiconductor (24, 38a, 38b), the thickness of the spacer is already known, so that a defined total thickness of the component base including the spacer attached thereto can be achieved.

11. The method according to any one of claims 9 to 10, comprising the step of attaching (S18) the upper contact module to the component base (50) and the spacer (64) attached thereto by means of a further sintering step.

12. A power semiconductor component (18) comprising a plurality of power semiconductors (24, 38a, 38b) which are fastened by a sintered connection between a lower contact module (42) and an upper contact module (62), wherein: At least one spacer (64) is arranged between at least one power semiconductor and the upper contact module for compensating for height tolerances of the plurality of power semiconductors; and The power semiconductor component is preferably produced by means of the device according to any one of claims 1 to 8 and / or by the method according to any one of claims 9 to 11.

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