Calibration method, device, system, equipment and medium for silicon wafer alignment system

Abstract

The application discloses a kind of silicon chip alignment system's surveying and calibrating method, device, system, equipment and medium.The method comprises: in response to the calibration operation of the target imaging position of mark in reference mark plate, obtain the image after the target imaging position of mark is calibrated, wherein the mark on the reference mark plate is engraved for calibration, and the mark in the image collected under the target imaging position is complete mark;In response to the operation corresponding to surveying and calibrating scheme, the image after the target imaging position of mark is calibrated is surveyed and calibrated, and the surveying and calibrating result corresponding to surveying and calibrating scheme is obtained.The above technical solution calibrates the target imaging position of mark in reference mark plate, so that the mark in the collected image is complete, improves the quality of acquisition image, and then executes surveying and calibrating scheme through high-quality image, so that the surveying and calibrating result is more accurate.

Description

Technical Field

[0001] This invention relates to the field of photolithography, and in particular to a calibration method, apparatus, system, equipment, and medium for a silicon wafer alignment system. Background Technology

[0002] With the development of photolithography technology, the research and development of silicon wafer alignment systems has become increasingly widespread.

[0003] Currently, silicon wafer worktables are commonly used for testing and calibrating silicon wafer alignment systems. However, due to the long development cycle of silicon wafer worktables and the relatively fast development speed of silicon wafer alignment systems, there is a shortage of silicon wafer worktables, which may even lead to inaccurate test and calibration results of silicon wafer alignment systems. Summary of the Invention

[0004] This invention provides a calibration method, apparatus, system, equipment, and medium for silicon wafer alignment systems to improve the accuracy of calibration results.

[0005] According to one aspect of the present invention, a calibration method for a silicon wafer alignment system is provided, comprising:

[0006] In response to the calibration operation of the target imaging position marked in the reference marking plate, an image of the target imaging position after calibration is obtained, wherein the reference marking plate is engraved with markings for calibration, and the markings in the image acquired at the target imaging position are complete markings;

[0007] In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme.

[0008] According to another aspect of the present invention, a calibration apparatus for a silicon wafer alignment system is provided, comprising:

[0009] The target imaging position calibration module is used to acquire an image after the target imaging position of the marked target is calibrated in response to the calibration operation of the target imaging position marked on the reference mark plate, wherein the reference mark plate is engraved with a calibration mark, and the mark in the image acquired at the target imaging position is a complete mark;

[0010] The calibration scheme execution module is used to respond to the operation corresponding to the calibration scheme, perform calibration on the image after the target imaging position of the marked is calibrated, and obtain the calibration result corresponding to the calibration scheme.

[0011] According to another aspect of the present invention, a calibration system for a silicon wafer alignment system is provided, comprising:

[0012] Test bench, the test bench including a reference mark plate;

[0013] A calibration device is used to perform the calibration method of the silicon wafer alignment system described in any embodiment of the present invention.

[0014] According to another aspect of the present invention, an electronic device is provided, the electronic device comprising:

[0015] At least one processor;

[0016] and a memory communicatively connected to the at least one processor;

[0017] The memory stores a computer program that can be executed by the at least one processor, which is then executed by the at least one processor to enable the at least one processor to perform the calibration method of the silicon wafer alignment system according to any embodiment of the present invention.

[0018] According to another aspect of the present invention, a computer-readable storage medium is provided, the computer-readable storage medium storing computer instructions for causing a processor to execute and implement the calibration method of the silicon wafer alignment system according to any embodiment of the present invention.

[0019] The technical solution of this invention, in response to a calibration operation on the target imaging position marked on a reference marking plate, acquires an image after the target imaging position of the marked position has been calibrated. The reference marking plate is engraved with calibration marks, and the marks in the image acquired at the target imaging position are complete marks. In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked position has been calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme. This technical solution, by calibrating the target imaging position marked on the reference marking plate, ensures that the marks in the acquired image are complete, improving the quality of the acquired image. Furthermore, by executing the calibration scheme with a high-quality image, the calibration result is more accurate.

[0020] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1This is a flowchart of a calibration method for a silicon wafer alignment system according to Embodiment 1 of the present invention;

[0023] Figure 2 A schematic diagram of the markings provided in an embodiment of the present invention;

[0024] Figure 3 A schematic diagram of a reference mark plate provided in an embodiment of the present invention;

[0025] Figure 4 This is a flowchart of a calibration method for a silicon wafer alignment system according to Embodiment 2 of the present invention;

[0026] Figure 5 A flowchart for marking position calibration is provided as an embodiment of the present invention;

[0027] Figure 6 A schematic diagram of a complete marking provided for an embodiment of the present invention;

[0028] Figure 7 This is a flowchart of a calibration method for a silicon wafer alignment system according to Embodiment 3 of the present invention;

[0029] Figure 8 A flowchart of a measurement error calibration scheme provided in an embodiment of the present invention;

[0030] Figure 9 This is a flowchart of a calibration method for a silicon wafer alignment system according to Embodiment 4 of the present invention;

[0031] Figure 10 A flowchart of a repeatability accuracy calibration scheme provided in an embodiment of the present invention;

[0032] Figure 11 This is a flowchart of a calibration method for a silicon wafer alignment system according to Embodiment 5 of the present invention;

[0033] Figure 12 A flowchart illustrating a field-of-view calibration scheme for a silicon wafer alignment system provided in an embodiment of the present invention;

[0034] Figure 13 A schematic diagram illustrating the X-direction field of view calibration provided in an embodiment of the present invention;

[0035] Figure 14 A flowchart illustrating another field-of-view calibration scheme for a silicon wafer alignment system provided in an embodiment of the present invention;

[0036] Figure 15 A schematic diagram illustrating the calibration of the Y-direction field of view range according to an embodiment of the present invention;

[0037] Figure 16This is a schematic diagram of the structure of a calibration device for a silicon wafer alignment system provided in Embodiment Six of the present invention;

[0038] Figure 17 This is a schematic diagram of the structure of a calibration system for a silicon wafer alignment system according to Embodiment 7 of the present invention;

[0039] Figure 18 This is a diagram illustrating the physical relationship between a silicon wafer alignment system and a test station according to an embodiment of the present invention.

[0040] Figure 19 This is a distribution diagram of a silicon wafer alignment system and a test station provided in an embodiment of the present invention;

[0041] Figure 20 This is a schematic diagram of the structure of an electronic device that implements the calibration method of the silicon wafer alignment system according to an embodiment of the present invention. Detailed Implementation

[0042] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0043] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be used interchangeably where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or devices. The acquisition, storage, use, and processing of data in the technical solutions of this application all comply with the relevant provisions of national laws and regulations.

[0044] Example 1

[0045] Figure 1This is a flowchart of a calibration method for a silicon wafer alignment system provided in Embodiment 1 of the present invention. This embodiment is applicable to the testing and calibration of a silicon wafer alignment system (WA). The method can be executed by a calibration device for the silicon wafer alignment system, which can be implemented in hardware and / or software and can be configured in electronic devices such as computers. Figure 1 As shown, the method includes:

[0046] S110. In response to the calibration operation of the target imaging position marked in the reference marking plate, an image of the target imaging position after calibration is obtained, wherein the reference marking plate is engraved with markings for calibration, and the markings in the image acquired at the target imaging position are complete markings.

[0047] In this embodiment of the invention, the reference mark plate may be engraved with various types of marks for calibration. The marks may be alignment marks and / or focusing marks. The alignment marks may be coarse alignment marks or fine alignment marks. The coarse alignment marks may be cross marks, the fine alignment marks may be centrally symmetrical graphics, and the focusing marks may be horizontal lines or vertical lines, etc.

[0048] For example, Figure 2 This is a schematic diagram of the markings provided in an embodiment of the present invention. For example... Figure 2 As shown, A represents the coarse alignment mark, B represents the fine alignment mark, C represents the first focusing mark, and D represents the second focusing mark. Figure 3 This is a schematic diagram of a reference mark plate provided for an embodiment of the present invention. (See diagram below.) Figure 3 As shown, the reference mark plate is engraved with WA alignment marks, autofocus mark area and coaxial fine alignment marks.

[0049] The target imaging position refers to the optimal imaging position of the marker. The marker is clear and complete in the image acquired at this position, and the image quality is the best, thus providing a high-quality image for the execution of subsequent calibration schemes.

[0050] Specifically, the X, Y, Z and RZ axes of the test stage can be adjusted manually or by command control to move the markers in the reference marking plate to the optimal imaging position.

[0051] S120. In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme.

[0052] In this embodiment of the invention, the calibration scheme may include, but is not limited to, a measurement error calibration scheme, a repeatability calibration scheme, and a silicon wafer alignment system field of view calibration scheme. The measurement error calibration scheme is used to evaluate the measurement error of the silicon wafer alignment system; the repeatability calibration scheme is used to verify the consistency of measurement results when the silicon wafer alignment system measures the same mark multiple times; and the silicon wafer alignment system field of view calibration scheme is used to evaluate the optical field of view of the silicon wafer alignment system.

[0053] Specifically, the image after the marked target imaging position is calibrated can be calibrated according to the control and calculation operations of different calibration schemes to obtain the calibration results corresponding to each calibration scheme.

[0054] The technical solution of this invention, in response to a calibration operation on the target imaging position marked on a reference marking plate, acquires an image after the target imaging position of the marked position has been calibrated. The reference marking plate is engraved with calibration marks, and the marks in the image acquired at the target imaging position are complete marks. In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked position has been calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme. This technical solution, by calibrating the target imaging position marked on the reference marking plate, ensures that the marks in the acquired image are complete, improving the quality of the acquired image. Furthermore, by executing the calibration scheme with a high-quality image, the calibration result is more accurate.

[0055] Example 2

[0056] Figure 4 This is a flowchart of a calibration method for a silicon wafer alignment system provided in Embodiment 2 of the present invention. The method of this embodiment can be combined with various optional schemes in the calibration methods for silicon wafer alignment systems provided in the above embodiments. The calibration method for the silicon wafer alignment system provided in this embodiment has been further optimized. Optionally, in response to the calibration operation of the target imaging position marked in the reference marking plate, obtaining an image after the target imaging position of the mark is calibrated includes: in response to the movement operation of the reference marking plate in a first direction and / or the focusing operation of the camera, acquiring a first captured image; performing target recognition on the first captured image to obtain a first target recognition result; if the first target recognition result is that the reference marking plate contains black dots, then moving the reference marking plate in a second direction; in response to the movement operation of the reference marking plate in the second direction, acquiring a second captured image; performing target recognition on the second captured image to obtain a second target recognition result; if the second target recognition result is that the mark is a complete mark, then the target imaging position of the mark is calibrated, and an image after the target imaging position of the mark is calibrated is obtained.

[0057] like Figure 4As shown, the method includes:

[0058] S210, in response to a movement operation of the reference mark plate in a first direction and / or a focusing operation of the camera, a first image is acquired, wherein the reference mark plate is engraved with marks for calibration.

[0059] The first direction can be the Z-axis direction or other directions, without specific limitations.

[0060] S220. Perform target recognition on the first captured image to obtain a first target recognition result. If the first target recognition result indicates that the reference marker plate contains black dots, then move the reference marker plate in the second direction.

[0061] Target recognition can be achieved through image recognition algorithms such as YOLO or manual recognition methods, and no specific limitations are made here.

[0062] S230, in response to the movement of the reference marker in the second direction, a second image is acquired.

[0063] The second direction can be the X-axis direction and / or the Y-axis direction, without being specifically limited here.

[0064] S240. Perform target recognition on the second captured image to obtain a second target recognition result. If the second target recognition result is that the mark is a complete mark, then the target imaging position of the mark is calibrated. Obtain the image after the target imaging position of the mark is calibrated. The mark in the image acquired at the target imaging position is a complete mark.

[0065] S250. In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme.

[0066] For example, Figure 5 This is a flowchart illustrating a marker position calibration method provided in an embodiment of the present invention. Taking the calibration of the optimal imaging position of the alignment marker as an example, the reference marker plate can be moved into the field of view of the silicon wafer alignment system by controlling the X-axis and / or Y-axis of the test stage. Then, the Z-axis of the test stage can be adjusted or the focus button of the camera can be used for focusing. The silicon wafer alignment system can transmit the captured image to the computer in real time. If a black dot with a sharpness greater than a preset sharpness threshold appears on the reference marker plate in the captured image, it indicates that the height of the Z-axis adjustment is the optimal focus position. Then, the X-axis, Y-axis, and RZ-axis of the test stage are moved until a complete marker appears in the captured image. The quantitative standard for a complete marker is that the marker in the captured image is not incomplete. Figure 6This is a schematic diagram of a complete marker provided by an embodiment of the present invention. In other words, when a complete marker appears in the captured image, the optimal imaging position of the marker is thus determined.

[0067] The technical solution of this invention improves the quality of the acquired images by marking the location of the markers.

[0068] Example 3

[0069] Figure 7 This is a flowchart of a calibration method for a silicon wafer alignment system provided in Embodiment 3 of the present invention. The method in this embodiment can be combined with various optional schemes in the calibration methods for silicon wafer alignment systems provided in the above embodiments. The calibration method for the silicon wafer alignment system provided in this embodiment has been further optimized. Optionally, the mark in the reference mark plate is an alignment mark, and the calibration scheme is a measurement error calibration scheme. Correspondingly, in response to the operation corresponding to the calibration scheme, the image after the target imaging position of the mark is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme, including: measuring the image acquired at the target imaging position of the alignment mark to obtain the initial center point position of the alignment mark; in response to the displacement operation of the reference mark plate in the target direction, acquiring the image at the position after the displacement of the reference mark plate and measuring the displacement distance; measuring the image at the position after the displacement of the reference mark plate to obtain the moving center point position of the alignment mark; and determining the calibration result corresponding to the measurement error calibration scheme based on the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance.

[0070] like Figure 7 As shown, the method includes:

[0071] S310. In response to the calibration operation of the target imaging position of the alignment mark in the reference mark plate, an image of the target imaging position of the alignment mark after calibration is obtained, wherein the reference mark plate is engraved with a mark for calibration, and the mark in the image acquired at the target imaging position is a complete mark.

[0072] S320. Measure the image acquired at the target imaging position of the alignment mark to obtain the initial center point position of the alignment mark.

[0073] The initial center position refers to the pixel coordinates of the center point of the alignment mark measured in the first measurement.

[0074] Specifically, the position of the alignment mark in the reference mark plate of the image acquired at the target imaging position can be measured by means of image recognition algorithm or manual measurement to obtain the initial center point position of the alignment mark.

[0075] S330, In response to the displacement operation of the reference mark plate in the target direction, acquire an image of the reference mark plate at the position after displacement and measure the displacement distance.

[0076] The target direction can be either the X or Y direction, without specific limitations. The shift distance refers to the distance the reference mark plate moves. It should be noted that the shift distance for each move can be a fixed value or a variable value, without specific limitations.

[0077] S340. Measure the image at the position after the reference mark plate is shifted to obtain the position of the center point of the alignment mark's movement.

[0078] The position of the moving center point refers to the pixel coordinates of the center point of the alignment mark measured after displacement.

[0079] Specifically, the position of the alignment mark in the image after the reference mark plate has been shifted can be measured by means of image recognition algorithm or manual measurement to obtain the position of the center point of the shift of the alignment mark.

[0080] S350. Based on the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance, determine the calibration result corresponding to the measurement error calibration scheme.

[0081] Specifically, the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance can be input into a pre-built measurement error calculation model to obtain the measurement error calibration results corresponding to the measurement error calibration scheme.

[0082] The measurement error calculation model is a pre-built mathematical formula used to calculate measurement errors. In other words, the measurement error calculation model can calculate the measurement error using the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance.

[0083] For example, Figure 8 This is a flowchart illustrating a measurement error calibration scheme provided in an embodiment of the present invention. Figure 8 As shown, the alignment mark can be moved to the optimal imaging position. The silicon wafer alignment system acquires and measures the image to obtain the center point position of the alignment mark. The test stage is moved to a different position, causing the alignment mark to shift by Δx1 in the X direction. The silicon wafer alignment system acquires and measures the image to determine the center point position of the alignment mark. The alignment mark is further shifted by Δx2 in the X direction. The silicon wafer alignment system measures the position of the center point of the alignment mark.

[0084] Assuming the silicon wafer alignment system follows the same error distribution for each measurement, and that the measurement error value is always δ, what is the theoretical value of the measurement result of the silicon wafer alignment system? and Satisfying the equation:

[0085]

[0086] Will Let k be the value of the measurement error calculation model for the silicon wafer alignment system.

[0087]

[0088] The test platform is continuously moved until the number of shifts reaches T, resulting in a set of measured center point positions of the alignment marks. The measurement displacement distance {Δx} of the test bench n |n=1,...,T}.

[0089] Will and {Δx n Substituting |n=1,...,T} into The measurement error set {δ} can be obtained. n |n=1,...,T-1},and then take the maximum value δ in the measurement error set. max As a measurement error.

[0090] The above steps are performed M times, and the average value of the M measurement errors is taken as the measurement error calibration result in the X direction.

[0091] Similarly, the steps for determining the calibration results in the Y direction are the same as those in the X direction. Specifically, the alignment mark is moved to the optimal imaging position, the silicon wafer alignment system acquires an image and measures the image to obtain the center point position of the alignment mark. The test stage is moved to a different position, causing the alignment mark to shift by Δy1 in the Y direction. The silicon wafer alignment system acquires and measures the image to determine the center point position of the alignment mark. The alignment mark is further shifted by Δy2 in the Y direction. The silicon wafer alignment system measures the position of the center point of the alignment mark.

[0092] Assuming the silicon wafer alignment system follows the same error distribution for each measurement, and that the measurement error value is always δ, what is the theoretical value of the measurement result of the silicon wafer alignment system? and Satisfying the equation:

[0093]

[0094] Will Let k be the value of the measurement error calculation model for the silicon wafer alignment system.

[0095]

[0096] The test platform is continuously moved until the number of shifts reaches T, resulting in a set of measured center point positions of the alignment marks. The measurement displacement distance {Δy} between the test bench and the test bench n |n=1,...,T}.

[0097] Will and {Δy n Substituting |n=1,...,T} into The measurement error set {δ} can be obtained. n |n=1,...,T-1},and then take the maximum value δ in the measurement error set. max As a measurement error.

[0098] The above steps are performed M times, and the average value of the M measurement errors is taken as the measurement error calibration result in the Y direction.

[0099] The technical solution of this invention realizes the calibration of measurement errors in the X and Y directions by executing a measurement error calibration scheme.

[0100] Example 4

[0101] Figure 9 This is a flowchart of a calibration method for a silicon wafer alignment system provided in Embodiment 4 of the present invention. The method in this embodiment can be combined with various optional schemes in the calibration methods for silicon wafer alignment systems provided in the above embodiments. The calibration method for the silicon wafer alignment system provided in this embodiment has been further optimized. Optionally, the marker in the reference marker plate is an alignment marker, and the calibration scheme is a repeatability accuracy calibration scheme. Correspondingly, in response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marker is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme, including: performing multiple measurements on the image acquired at the target imaging position of the alignment marker to obtain the center point position of the alignment marker under each measurement; determining the average value of the center point position of the alignment marker based on the center point position of the alignment marker under each measurement; determining the standard deviation of the center point position of the alignment marker based on the center point position of the alignment marker under each measurement and the average value of the center point position of the alignment marker; and determining the calibration result corresponding to the repeatability accuracy calibration scheme based on the standard deviation of the center point position of the alignment marker.

[0102] like Figure 9 As shown, the method includes:

[0103] S410. In response to the calibration operation of the target imaging position of the alignment mark in the reference mark plate, an image of the target imaging position of the alignment mark after calibration is obtained, wherein the reference mark plate is engraved with a mark for calibration, and the mark in the image acquired at the target imaging position is a complete mark.

[0104] S420. Perform multiple measurements on the image acquired at the target imaging position of the alignment mark to obtain the center point position of the alignment mark under each measurement.

[0105] S430. Determine the average value of the center point position of the alignment mark based on the center point position of the alignment mark under each measurement.

[0106] S440. Determine the standard deviation of the center point position of the alignment mark based on the center point position of the alignment mark under each measurement and the average value of the center point position of the alignment mark.

[0107] S450. Determine the calibration result corresponding to the repeatability accuracy calibration scheme based on the standard deviation of the center point position of the alignment mark.

[0108] Understandably, if the silicon wafer alignment system has good repeatability, the center point positions of the alignment marks obtained from multiple consecutive measurements should be very close, provided that the conditions for each measurement are the same.

[0109] For example, Figure 10 This is a flowchart illustrating a repeatability accuracy calibration scheme provided in an embodiment of the present invention. Figure 10 As shown, the alignment mark is moved to the optimal imaging position, and the silicon wafer alignment system continuously measures N times to obtain the center point position of N alignment marks.

[0110] Based on the center point positions of the N alignment marks mentioned above, the average center point position of the alignment marks in the X direction can be calculated:

[0111]

[0112] Standard deviation of the center point position of the alignment mark in the X direction:

[0113]

[0114] Average position of the center point of the alignment mark in the Y direction:

[0115]

[0116] Standard deviation of the center point position of the alignment mark in the Y direction:

[0117]

[0118] At a 95% confidence level, the maximum permissible difference in the calibration results corresponding to the repeatability accuracy calibration scheme can be set as δ. x Or δ y It can also be set to a preset multiple of δ. x Or δ y For example, 2.8×δ x Or 2.8×δ y .

[0119] The technical solution of this invention realizes the calibration of repeatability in the X and Y directions by implementing a repeatability calibration scheme.

[0120] Example 5

[0121] Figure 11 This is a flowchart of a calibration method for a silicon wafer alignment system provided in Embodiment 5 of the present invention. The method in this embodiment can be combined with various optional schemes in the calibration methods for silicon wafer alignment systems provided in the above embodiments. The calibration method for the silicon wafer alignment system provided in this embodiment has been further optimized. Optionally, the reference mark is a focusing mark, and the calibration scheme is a silicon wafer alignment system field of view calibration scheme. Correspondingly, in response to the operation corresponding to the calibration scheme, the image after the target imaging position of the mark is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme. This includes: performing target recognition on the image acquired at the target imaging position of the focusing mark to obtain a third target recognition result; if the third target recognition result indicates that the focusing mark is a complete mark, controlling the focusing mark to move upwards in a third direction, acquiring images in real time during the movement until the first target line of the focusing mark in the acquired image reaches the edge of the image and then stopping the movement; controlling the focusing mark to move in a fourth direction, acquiring images in real time during the movement until the second target line of the focusing mark in the acquired image reaches the edge of the image and then stopping the movement, where the first target line and the second target line are the lines at both ends of the focusing mark, and the third direction is opposite to the fourth direction; determining the calibration result corresponding to the silicon wafer alignment system field of view calibration scheme based on the distance between the lines at both ends of the focusing mark and the distance the focusing mark moves in the fourth direction.

[0122] like Figure 11 As shown, the method includes:

[0123] S510. In response to the calibration operation of the target imaging position of the focusing mark in the reference mark plate, an image of the target imaging position of the focusing mark after calibration is obtained, wherein the reference mark plate is engraved with a mark for calibration, and the mark in the image acquired at the target imaging position is a complete mark.

[0124] S520. Perform target recognition on the image acquired at the target imaging position of the focusing mark to obtain a third target recognition result.

[0125] Target recognition can be achieved through image recognition algorithms such as YOLO or manual recognition methods, and no specific limitations are made here.

[0126] S530, if the third target recognition result is that the focus mark is a complete mark, control the focus mark to move upward on the third side, and acquire images in real time during the movement until the first target line of the focus mark in the acquired image reaches the edge of the image and then stops moving.

[0127] The third direction can be a horizontal direction to the left or a vertical direction to the up, etc., without specific limitations.

[0128] It should be noted that when the first target line of the focus mark in the image reaches the edge of the image, the first target line coincides with the edge of the image and disappears, that is, the focus mark in the image is no longer complete.

[0129] S540. Control the focusing mark to move in the fourth direction, and acquire images in real time during the movement until the second target line of the focusing mark in the acquired image reaches the edge of the image and then stops moving. The first target line and the second target line are the lines at both ends of the focusing mark, and the third direction is opposite to the fourth direction.

[0130] The fourth direction can be a horizontal direction to the right or a vertical direction downwards, etc., without specific limitations. The line widths of the first and second target lines can be 1 micrometer or other widths, without specific limitations.

[0131] S550. Based on the distance between the lines at both ends of the focusing mark and the distance the focusing mark moves in the fourth direction, determine the calibration result corresponding to the field of view calibration scheme of the silicon wafer alignment system.

[0132] Specifically, the field of view of the silicon wafer alignment system can be obtained by adding the distance between the lines at both ends of the focusing mark and the distance the focusing mark moves in the fourth direction.

[0133] For example, Figure 12 This is a flowchart illustrating a field-of-view calibration scheme for a silicon wafer alignment system provided in an embodiment of the present invention. Figure 13 This is a schematic diagram of X-direction field-of-view calibration provided by an embodiment of the present invention. The first target line can be a blue line, and the second target line can be a red line. Figure 12As shown, move the focusing mark to the optimal imaging position; move the focusing mark 1 μm to the left, and view the image uploaded to the computer by the silicon wafer alignment system in real time; if the focusing mark is complete in the image, it indicates that the focusing mark is still in the field of view, continue to move it to the left, 1 μm each time, until there are no blue lines in the image; assuming that the focusing mark was moved x1 to the left when the last complete focusing mark was captured. The focusing mark begins to move to the right, moving it to the right. Assuming that the focusing mark was moved x2 to the right when the last complete focusing mark was captured, the field of view of the silicon wafer alignment system in the X direction is: x2 + x, where x is the width of the focusing mark; repeat the above steps N times to obtain the average field of view of the silicon wafer alignment system in the X direction.

[0134] Similarly, Figure 14 A flowchart illustrating another field-of-view calibration scheme for a silicon wafer alignment system provided in an embodiment of the present invention. Figure 15 This is a schematic diagram illustrating a Y-direction field-of-view range calibration method provided in an embodiment of the present invention. Figure 14 As shown, the focusing mark is moved to the optimal imaging position; the focusing mark is moved upwards by 1µm, and the image uploaded to the computer by the silicon wafer alignment system is viewed in real time; if the focusing mark in the image is complete, it indicates that the focusing mark is still in the field of view, and the upward movement continues, moving 1µm each time, until there are no blue lines in the image; assuming that the focusing mark was moved upwards by y1 when the last complete focusing mark was captured. The focusing mark begins to move downwards, and assuming that the focusing mark was moved downwards by y2 when the last complete focusing mark was captured, the field of view of the silicon wafer alignment system in the Y direction is: y2+y, where y is the length of the focusing mark; repeating the above steps N times yields the average field of view of the silicon wafer alignment system in the Y direction.

[0135] It should be noted that when the line width of the focusing mark is 1µm, the silicon wafer alignment system may have a 1µm error in the field of view in the X or Y direction.

[0136] The technical solution of this invention realizes the calibration of the field of view in the X and Y directions by executing the silicon wafer alignment system field of view calibration scheme.

[0137] Example 6

[0138] Figure 16 This is a schematic diagram of the structure of a calibration device for a silicon wafer alignment system provided in Embodiment Six of the present invention. Figure 16 As shown, the device includes:

[0139] The target imaging position calibration module 610 is used to acquire an image after the target imaging position of the marked target is calibrated in response to the calibration operation of the target imaging position marked on the reference mark plate, wherein the reference mark plate is engraved with a calibration mark, and the mark in the image acquired at the target imaging position is a complete mark.

[0140] The calibration scheme execution module 620 is used to perform calibration on the image after the target imaging position of the marked is calibrated in response to the operation corresponding to the calibration scheme, and obtain the calibration result corresponding to the calibration scheme.

[0141] In some optional implementations, the target imaging position calibration module 610 may specifically be used for:

[0142] In response to a movement operation of the reference marker plate in a first direction and / or a focusing operation of the camera, a first captured image is acquired;

[0143] The first captured image is subjected to target recognition to obtain a first target recognition result. If the first target recognition result indicates that the reference marker plate contains black dots, the reference marker plate is moved in the second direction.

[0144] In response to a movement operation of the reference marker plate in a second direction, a second image is acquired;

[0145] Target recognition is performed on the second captured image to obtain a second target recognition result. If the second target recognition result indicates that the target is a complete target, then the target imaging position of the target is calibrated and the image of the target after the target imaging position calibration is completed is obtained.

[0146] In some optional implementations, the reference mark plate is marked with alignment marks, and the calibration scheme is a measurement error calibration scheme;

[0147] Correspondingly, the calibration scheme execution module 620 includes:

[0148] An initial position measurement unit is used to measure the image acquired at the target imaging position of the alignment mark to obtain the initial center point position of the alignment mark;

[0149] The displacement distance measurement unit is used to acquire an image of the reference mark plate at the position after displacement and to measure the displacement distance in response to a displacement operation of the reference mark plate in the target direction;

[0150] The displacement position measurement unit is used to measure the image of the reference mark plate after it has been shifted, and to obtain the position of the center point of the alignment mark.

[0151] The measurement error determination unit is used to determine the calibration result corresponding to the measurement error calibration scheme based on the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance.

[0152] In some optional implementations, the measurement error determination unit may specifically be used for:

[0153] The initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance are input into the pre-constructed measurement error calculation model to obtain the measurement error calibration result corresponding to the measurement error calibration scheme.

[0154] In some optional implementations, the reference mark plate is marked with alignment marks, and the calibration scheme is a repeatability accuracy calibration scheme;

[0155] Correspondingly, the calibration scheme execution module 620 can be used specifically for:

[0156] The image acquired at the target imaging position of the alignment mark is measured multiple times to obtain the center point position of the alignment mark under each measurement.

[0157] The average value of the center point position of the alignment mark is determined based on the center point position of the alignment mark under each measurement;

[0158] The standard deviation of the center point position of the alignment mark is determined based on the center point position of the alignment mark under each measurement and the average value of the center point position of the alignment mark;

[0159] The calibration result corresponding to the repeatability accuracy calibration scheme is determined based on the standard deviation of the center point position of the alignment mark.

[0160] In some optional implementations, the reference mark plate is marked with a focusing mark, and the calibration scheme is a silicon wafer alignment system field of view calibration scheme;

[0161] Correspondingly, the calibration scheme execution module 620 can be used specifically for:

[0162] Target recognition is performed on the image acquired at the target imaging position of the focusing mark to obtain a third target recognition result;

[0163] If the third target recognition result is that the focus mark is a complete mark, the focus mark is controlled to move upward in the third direction. During the movement, the image is acquired in real time until the first target line of the focus mark in the acquired image reaches the edge of the image and then the movement stops.

[0164] The focusing mark is controlled to move in the fourth direction, and images are acquired in real time during the movement until the second target line of the focusing mark in the acquired image reaches the edge of the image and then the movement stops. The first target line and the second target line are the lines at both ends of the focusing mark, and the third direction is opposite to the fourth direction.

[0165] The calibration result corresponding to the field of view calibration scheme of the silicon wafer alignment system is determined based on the distance between the two ends of the focusing mark and the distance the focusing mark moves in the fourth direction.

[0166] The calibration device for the silicon wafer alignment system provided in this embodiment of the invention can execute the calibration method for the silicon wafer alignment system provided in any embodiment of the invention, and has the corresponding functional modules and beneficial effects of executing the method.

[0167] Example 7

[0168] Figure 17 This is a schematic diagram of the structure of a calibration system for a silicon wafer alignment system provided in Embodiment 7 of the present invention, as shown below. Figure 17 As shown, the system includes:

[0169] Test bench 710, which includes a benchmark mark plate.

[0170] Specifically, the test stage 710 includes a reference mark plate, a light shield, and an adjustment mechanism. The reference mark plate is engraved with coarse alignment marks, fine alignment marks, and focus marks. The light shield is used to block external light sources, thereby avoiding interference from them. The adjustment mechanism includes X-axis, Y-axis, Z-axis, and RZ-axis, allowing for position adjustment of the reference mark plate in the X, Y, Z, and RZ directions.

[0171] The calibration device 720 is used to perform the calibration method of the silicon wafer alignment system described in any embodiment of the present invention.

[0172] The calibration equipment 720 includes a silicon wafer alignment system and a computer. The silicon wafer alignment system includes an optical system and an image processing unit. The optical system includes a microscope, a low-magnification tube lens, a high-magnification tube lens, a low-magnification camera, a high-magnification camera, and an illumination module. The image processing unit receives instructions from the computer, controls the illumination operation of the illumination module, and drives the low-magnification and high-magnification cameras to capture images of the marks on the reference marking plate or wafer. After image capture, the image processing unit identifies and locates the mark position, measures the deviation of the mark's center point coordinates relative to the image center point in the X and Y directions. A pixel coordinate system can be established with the image center point to measure the coordinates of the mark's center point within this coordinate system. The image processing unit returns the deviation to the computer and uploads the captured image to the computer via HDMI.

[0173] Figure 18This is a diagram illustrating the physical relationship between a silicon wafer alignment system and a test stage according to an embodiment of the present invention. Figure 18 As shown, the optical system can be mounted on a test bench to photograph and sample marks on a reference marking plate on the test bench. The image processing unit is connected to the optical system and is used to receive instructions from the computer, control illumination, acquire images, and perform measurement calculations. Figure 19 This is a distribution diagram of a silicon wafer alignment system and a test station provided in an embodiment of the present invention. Figure 19 The area within the red box represents components of the silicon wafer alignment system, while the area outside the red box represents components of the test stage.

[0174] The technical solution of this invention calibrates the target imaging position marked on the reference marking plate, ensuring complete marking in the acquired image and improving the quality of the acquired image. This high-quality image is then used to execute the calibration scheme, resulting in more accurate calibration results. Furthermore, by using the test platform of this invention to replace the silicon wafer workbench, the testing and calibration of the silicon wafer alignment system can be completed ahead of schedule.

[0175] Example 8

[0176] Figure 20 A schematic diagram of an electronic device 10 that can be used to implement embodiments of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital assistants, cellular phones, smartphones, wearable devices (e.g., helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0177] like Figure 20 As shown, the electronic device 10 includes at least one processor 11 and a memory, such as a read-only memory (ROM) 12 or a random access memory (RAM) 13, communicatively connected to the at least one processor 11. The memory stores computer programs executable by the at least one processor. The processor 11 can perform various appropriate actions and processes based on the computer program stored in the ROM 12 or loaded into the RAM 13 from storage unit 18. The RAM 13 can also store various programs and data required for the operation of the electronic device 10. The processor 11, ROM 12, and RAM 13 are interconnected via a bus 14. An I / O interface 15 is also connected to the bus 14.

[0178] Multiple components in electronic device 10 are connected to I / O interface 15, including: input unit 16, such as keyboard, mouse, etc.; output unit 17, such as various types of displays, speakers, etc.; storage unit 18, such as disk, optical disk, etc.; and communication unit 19, such as network card, modem, wireless transceiver, etc. Communication unit 19 allows electronic device 10 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0179] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above, such as the calibration method of a silicon wafer alignment system, which includes:

[0180] In response to the calibration operation of the target imaging position marked in the reference marking plate, an image of the target imaging position after calibration is obtained, wherein the reference marking plate is engraved with markings for calibration, and the markings in the image acquired at the target imaging position are complete markings;

[0181] In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme.

[0182] In some embodiments, the calibration method for the silicon alignment system can be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or mounted on electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the calibration method for the silicon alignment system described above can be performed. Alternatively, in other embodiments, processor 11 can be configured to perform the calibration method for the silicon alignment system by any other suitable means (e.g., by means of firmware).

[0183] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), system-on-a-chip (SoCs), complex programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0184] Computer programs used to implement the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be performed. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0185] In the context of this invention, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination thereof. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof.

[0186] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the electronic device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0187] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or computing systems that include middleware components (e.g., application servers), or computing systems that include frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.

[0188] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.

[0189] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0190] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A calibration method for a silicon wafer alignment system, characterized in that, include: In response to the calibration operation of the target imaging position marked in the reference marking plate, an image of the target imaging position after calibration is obtained, wherein the reference marking plate is engraved with markings for calibration, and the markings in the image acquired at the target imaging position are complete markings; In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme. The step of acquiring an image after the target imaging position of the marked location is calibrated, in response to the calibration operation on the target imaging position marked in the reference marker plate, includes: In response to a movement operation of the reference marker plate in a first direction and / or a focusing operation of the camera, a first captured image is acquired, wherein the first direction is the Z-axis direction; The first captured image is subjected to target recognition to obtain a first target recognition result. If the first target recognition result is that the reference mark plate contains black dots, the reference mark plate is moved in a second direction, the second direction being the X-axis direction and / or the Y-axis direction. In response to a movement operation of the reference marker plate in a second direction, a second image is acquired; Target recognition is performed on the second captured image to obtain a second target recognition result. If the second target recognition result is that the mark is a complete mark, then the target imaging position of the mark is calibrated and the image of the mark after the target imaging position calibration is completed is obtained. The reference mark plate contains alignment marks, and the calibration scheme is a measurement error calibration scheme. Accordingly, in response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point has been calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme, including: The initial center point position of the alignment mark is obtained by measuring the image acquired at the target imaging position of the alignment mark. In response to a displacement operation of the reference marker plate in the target direction, an image of the reference marker plate at the displacement position is acquired and the displacement distance is measured; The position of the center point of the alignment mark is obtained by measuring the image at the position after the reference mark plate is shifted. The calibration result corresponding to the measurement error calibration scheme is determined based on the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance.

2. The method according to claim 1, characterized in that, The determination of the calibration result corresponding to the measurement error calibration scheme based on the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance includes: The initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance are input into the pre-constructed measurement error calculation model to obtain the measurement error calibration result corresponding to the measurement error calibration scheme.

3. A calibration method for a silicon wafer alignment system, characterized in that, include: In response to the calibration operation of the target imaging position marked in the reference marking plate, an image of the target imaging position after calibration is obtained, wherein the reference marking plate is engraved with markings for calibration, and the markings in the image acquired at the target imaging position are complete markings; In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme. The step of acquiring an image after the target imaging position of the marked location is calibrated, in response to the calibration operation on the target imaging position marked in the reference marker plate, includes: In response to a movement operation of the reference marker plate in a first direction and / or a focusing operation of the camera, a first captured image is acquired, wherein the first direction is the Z-axis direction; The first captured image is subjected to target recognition to obtain a first target recognition result. If the first target recognition result is that the reference mark plate contains black dots, the reference mark plate is moved in a second direction, the second direction being the X-axis direction and / or the Y-axis direction. In response to a movement operation of the reference marker plate in a second direction, a second image is acquired; Target recognition is performed on the second captured image to obtain a second target recognition result. If the second target recognition result is that the mark is a complete mark, then the target imaging position of the mark is calibrated and the image of the mark after the target imaging position calibration is completed is obtained. The reference mark plate is marked with alignment marks, and the calibration scheme is a repeatability accuracy calibration scheme. Accordingly, in response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point has been calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme, including: The image acquired at the target imaging position of the alignment mark is measured multiple times to obtain the center point position of the alignment mark under each measurement. The average value of the center point position of the alignment mark is determined based on the center point position of the alignment mark under each measurement; The standard deviation of the center point position of the alignment mark is determined based on the center point position of the alignment mark under each measurement and the average value of the center point position of the alignment mark; The calibration result corresponding to the repeatability accuracy calibration scheme is determined based on the standard deviation of the center point position of the alignment mark.

4. A calibration method for a silicon wafer alignment system, characterized in that, include: In response to the calibration operation of the target imaging position marked in the reference marking plate, an image of the target imaging position after calibration is obtained, wherein the reference marking plate is engraved with markings for calibration, and the markings in the image acquired at the target imaging position are complete markings; In response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked is calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme. The step of acquiring an image after the target imaging position of the marked location is calibrated, in response to the calibration operation on the target imaging position marked in the reference marker plate, includes: In response to a movement operation of the reference marker plate in a first direction and / or a focusing operation of the camera, a first captured image is acquired, wherein the first direction is the Z-axis direction; The first captured image is subjected to target recognition to obtain a first target recognition result. If the first target recognition result is that the reference mark plate contains black dots, the reference mark plate is moved in a second direction, the second direction being the X-axis direction and / or the Y-axis direction. In response to a movement operation of the reference marker plate in a second direction, a second image is acquired; Target recognition is performed on the second captured image to obtain a second target recognition result. If the second target recognition result is that the mark is a complete mark, then the target imaging position of the mark is calibrated and the image of the mark after the target imaging position calibration is completed is obtained. The reference mark plate is marked with a focusing mark, and the calibration scheme is a silicon wafer alignment system field of view calibration scheme. Accordingly, in response to the operation corresponding to the calibration scheme, the image after the target imaging position of the marked point has been calibrated is calibrated to obtain the calibration result corresponding to the calibration scheme, including: Target recognition is performed on the image acquired at the target imaging position of the focusing mark to obtain a third target recognition result; If the third target recognition result is that the focus mark is a complete mark, the focus mark is controlled to move upward in the third direction. During the movement, the image is acquired in real time until the first target line of the focus mark in the acquired image reaches the edge of the image and then the movement stops. The focusing mark is controlled to move in the fourth direction, and images are acquired in real time during the movement until the second target line of the focusing mark in the acquired image reaches the edge of the image and then the movement stops. The first target line and the second target line are the lines at both ends of the focusing mark, and the third direction is opposite to the fourth direction. The calibration result corresponding to the field of view calibration scheme of the silicon wafer alignment system is determined based on the distance between the two ends of the focusing mark and the distance the focusing mark moves in the fourth direction.

5. A calibration device for a silicon wafer alignment system, characterized in that, include: The target imaging position calibration module is used to acquire an image after the target imaging position of the marked target is calibrated in response to the calibration operation of the target imaging position marked on the reference mark plate, wherein the reference mark plate is engraved with a calibration mark, and the mark in the image acquired at the target imaging position is a complete mark; The calibration scheme execution module is used to respond to the operation corresponding to the calibration scheme, perform calibration on the image after the target imaging position of the marked is calibrated, and obtain the calibration result corresponding to the calibration scheme; The target imaging position calibration module is specifically used for: in response to a movement operation of the reference marker plate in a first direction and / or a focusing operation of the camera, acquiring a first captured image, wherein the first direction is the Z-axis direction; performing target recognition on the first captured image to obtain a first target recognition result; if the first target recognition result indicates that the reference marker plate contains black dots, then moving the reference marker plate in a second direction; in response to the movement operation of the reference marker plate in the second direction, acquiring a second captured image, wherein the second direction is the X-axis direction and / or the Y-axis direction; performing target recognition on the second captured image to obtain a second target recognition result; if the second target recognition result indicates that the marker is a complete marker, then the target imaging position calibration of the marker is completed, and acquiring an image of the marker after the target imaging position calibration is completed; The reference mark plate contains alignment marks, and the calibration scheme is a measurement error calibration scheme. Accordingly, the calibration scheme execution module includes: An initial position measurement unit is used to measure the image acquired at the target imaging position of the alignment mark to obtain the initial center point position of the alignment mark; The displacement distance measurement unit is used to acquire an image of the reference mark plate at the position after displacement and to measure the displacement distance in response to a displacement operation of the reference mark plate in the target direction; The displacement position measurement unit is used to measure the image of the reference mark plate after it has been shifted, and to obtain the position of the center point of the alignment mark. The measurement error determination unit is used to determine the calibration result corresponding to the measurement error calibration scheme based on the initial center point position of the alignment mark, the moving center point position of the alignment mark, and the displacement distance.

6. A calibration system for a silicon wafer alignment system, characterized in that, include: Test bench, the test bench including a reference mark plate; A calibration device for performing the calibration method of the silicon wafer alignment system according to any one of claims 1-4.

7. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to the at least one processor; The memory stores a computer program that can be executed by the at least one processor, which enables the at least one processor to perform the calibration method of the silicon wafer alignment system according to any one of claims 1-4.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions that, when executed by a processor, implement the calibration method of the silicon wafer alignment system according to any one of claims 1-4.

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