Circuit board and semiconductor package including same

Abstract

A circuit board according to an embodiment includes an insulating layer and an electrode unit disposed on the insulating layer, in which a top surface of the electrode unit includes: a first portion extending in a first direction parallel to a top surface of the insulating layer; a second portion parallel to a top surface of the insulating layer and extending in a second direction having a predetermined inclination angle with respect to the first direction; and a bent portion, the bent portion being disposed between the first portion and the second portion, and the bent portion further including a reinforcing pattern in a region where an extension line of the first portion and an extension line of the second portion form an obtuse angle.

Description

Technical Field

[0001] Embodiments relate to a circuit board, and more particularly, to a circuit board including an electrode portion having improved electrical reliability, and a semiconductor package including the circuit board. Background Art

[0002] As the performance of electrical and electronic products continues to improve, technologies for arranging more semiconductor devices on a limited-size semiconductor package circuit board are being proposed and studied. However, since conventional semiconductor packaging is based on mounting a single semiconductor device, there are limitations in achieving the desired performance.

[0003] Therefore, semiconductor packages have recently been developed that use multiple circuit boards to mount multiple semiconductor devices. These semiconductor packages have a structure in which multiple semiconductor devices are connected to each other horizontally and / or vertically on the circuit boards. Consequently, these semiconductor packages offer the advantages of efficiently utilizing the mounting area for the semiconductor devices and transmitting high-speed signals through short signal transmission paths between the semiconductor devices.

[0004] Due to these advantages, the semiconductor package as described above is widely used in mobile devices and the like.

[0005] Furthermore, as the number of semiconductor devices and / or the size of each semiconductor device increases according to the trend toward higher integration or as functional portions of semiconductor devices are divided, semiconductor packaging applied to products providing the Internet of Things (IoT), autonomous vehicles, and high-performance servers is expanding the concept to include semiconductor chips.

[0006] Therefore, mutual communication between semiconductor devices and / or semiconductor chips has become important, and thus, there is a trend to arrange an interposer between a circuit board of a semiconductor package and the semiconductor device.

[0007] The interposer may function as a redistribution layer that gradually increases the width or depth of a circuit pattern from a semiconductor device to a semiconductor package to facilitate mutual communication between semiconductor devices and / or semiconductor die or to interconnect a semiconductor device and a semiconductor package circuit board, thereby smoothly transmitting electrical signals between the semiconductor device and a semiconductor package circuit board having a circuit pattern that is relatively larger than the circuit pattern of the semiconductor device.

[0008] At the same time, the packaging substrate and / or interposer used for semiconductor packaging may include an electrode portion that is electrically connected to the semiconductor device and / or semiconductor core. The electrode portion may include a plurality of first electrodes and a plurality of second electrodes, the plurality of first electrodes corresponding to pads connected to the semiconductor device and / or semiconductor core, and the plurality of second electrodes corresponding to traces connected between the plurality of first electrodes. At the same time, the number of terminals provided on the semiconductor device and / or semiconductor core increases, or the width and / or pitch of the terminals becomes finer. Therefore, the width and / or pitch of each of the first electrode and the second electrode of the electrode portion also becomes finer.

[0009] At this time, as the width and / or spacing of the plurality of second electrodes become finer, an electrical open circuit problem may occur in which the circuit connection is disconnected at a specific portion of the plurality of second electrodes. For example, the plurality of second electrodes may include a portion that bends in the horizontal direction and may be extended. In addition, as the width of the second electrode becomes finer, plating defects may occur at the bent portion, and thus an electrical open circuit problem may occur. In addition, when the width and spacing of the second electrodes become smaller and an impact is applied to the bent portion of the second electrode, cracks may occur in the bent portion of the second electrode. Summary of the Invention

[0010] Technical issues

[0011] The embodiment provides a circuit board including an electrode part having improved electrical and physical reliability, and a semiconductor package including the same.

[0012] Furthermore, embodiments provide a circuit board having a reinforcement portion having a step structure in a bent portion of a connection electrode, and a semiconductor package including the same.

[0013] Furthermore, the embodiment provides a circuit board having improved impedance matching characteristics and a semiconductor package including the same.

[0014] Furthermore, the embodiment provides a circuit board having improved adhesion between an insulating layer and an electrode part, and a semiconductor package including the same.

[0015] The technical problems to be solved by the proposed embodiments are not limited to the above-mentioned technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the art to which the proposed embodiments pertain from the following description.

[0016] Technical Solution

[0017] According to an embodiment, a circuit board includes: an insulating layer; and an electrode portion, wherein the electrode portion is arranged on the insulating layer, wherein the upper surface of the electrode portion includes a first part, a second part and a bending portion, the first part extends along a first direction parallel to the upper surface of the insulating layer, the second part extends along a second direction parallel to the upper surface of the insulating layer and having a predetermined inclination angle with the first direction, the bending portion is arranged between the first part and the second part, and the bending portion also includes a reinforcement pattern in an area where an extension line of the first part forms an obtuse angle with an extension line of the second part.

[0018] Furthermore, the electrode portion has a step in which its width varies in the bent portion between the first portion and the second portion.

[0019] In addition, a width of the bent portion including the reinforcement pattern is greater than a width of at least one of the first portion and the second portion.

[0020] In addition, the electrode portion has a width in the range of 2 μm to 8 μm.

[0021] Furthermore, the circuit board further includes a pad portion that is disposed on the insulating layer and connected to the electrode portion.

[0022] In addition, the bent portion includes a first side surface facing an outer surface of the pad part and a second side surface opposite to the first side surface, and the reinforcement pattern is provided on the first side surface of the bent portion.

[0023] Furthermore, the reinforcement pattern is a protruding portion that protrudes from the first side surface of the bent portion toward the pad portion.

[0024] In addition, the bent portion further includes a first concave portion that is provided on the second side surface and is concave toward the first side surface.

[0025] Furthermore, at least one side surface of the first portion and the second portion of the electrode part is provided with a second concave portion that is concave toward the inner side of the electrode part.

[0026] In addition, the electrode portion includes a first group of electrode portions and a second group of electrode portions, the first group of electrode portions includes a plurality of electrode patterns spaced apart from each other at a first spacing, the second group of electrode portions includes a plurality of electrode patterns spaced apart from each other at a second spacing larger than the first spacing, the bent portion of the first group of electrode portions is provided with the reinforcement pattern, and the bent portion of the second group of electrode portions is not provided with the reinforcement pattern.

[0027] Furthermore, the electrode portion includes a connection portion provided between the pad portion and the first portion or the second portion, and the connection portion has a width that varies from the pad portion toward the first portion or the second portion.

[0028] In addition, the connection portion has a width gradually decreasing from the pad portion toward the first portion or the second portion.

[0029] Furthermore, the pad portion has an elliptical shape in a planar shape.

[0030] In addition, the periphery of the upper surface of the pad portion includes: a curved portion having a specific curvature radius; a first straight portion connected to the curved portion; and a second straight portion extending from the first straight portion along a horizontal direction with a predetermined inclination angle.

[0031] In addition, the insulating layer includes: a first insulating layer; and a second insulating layer, the second insulating layer is located on the first insulating layer, and the electrode portion is arranged between the first insulating layer and the second insulating layer, and the second insulating layer covers the reinforcement pattern of the bent portion.

[0032] At the same time, the circuit board according to the embodiment includes: an insulating layer; and an electrode portion, the electrode portion being arranged on the insulating layer, wherein the electrode portion includes a first part, a second part and a bending portion, the first part extending along a first direction parallel to the upper surface of the insulating layer, the second part extending along a second direction parallel to the upper surface of the insulating layer and having a predetermined inclination angle relative to the first direction, and the bending portion being arranged between the first part and the second part, wherein the bending portion includes a first side surface and a second side surface opposite to the first side surface, and the first side surface of the bending portion has a convex portion convex toward an outward direction away from the first side surface, and the second side surface of the bending portion has a concave portion concave toward the first side surface.

[0033] In addition, the circuit board also includes a pad portion arranged on the insulating layer, wherein the pad portion includes a first group of pad portions and a second group of pad portions, the first group of pad portions including a plurality of pads spaced apart in a third direction parallel to the upper surface of the insulating layer and perpendicular to the first direction; and the second group of pad portions including a plurality of pads spaced apart from the first group of pad portions in the first direction and spaced apart in the third direction.

[0034] In addition, the electrode portion includes: a first electrode portion, which is arranged between multiple pads of the first group of pad portions; and a second electrode portion, which is arranged between multiple pads of the second group of pad portions, wherein each of the first electrode portion and the second electrode portion includes multiple electrode lines spaced apart from each other in the third direction, and the number of electrode lines of the first electrode portion is different from the number of electrode lines of the second electrode portion.

[0035] In addition, the number of electrode lines of the first electrode portion is greater than the number of electrode lines of the second electrode portion, and a protruding portion is provided on the first side surface of the first electrode portion facing the first group of pad portions, and the concave portion is provided on the second side surface of the first electrode portion facing the second group of pad portions.

[0036] Furthermore, the concave portion and the convex portion are not provided on the first side surface and the second side surface of the bent portion of the second electrode part.

[0037] Beneficial effects

[0038] A circuit board and a semiconductor package including the same in accordance with an embodiment include an electrode portion. The upper surface of the electrode portion includes a first portion, a second portion, and a bent portion. The first portion extends along a first horizontal direction, the second portion extends along a second horizontal direction at a predetermined angle to the first horizontal direction, and the bent portion is disposed between the first and second portions. The bent portion includes a reinforcement pattern. The reinforcement pattern can increase the width of the bent portion of the electrode portion.

[0039] The reinforcement pattern has a protruding shape that protrudes toward the adjacent pad. Thus, embodiments can provide a reinforcement pattern having a protruding shape, thereby alleviating current concentration in the bent portion. Consequently, embodiments can maintain a more uniform current distribution in the electrode portion. Furthermore, when the protruding shape of the reinforcement pattern has a curvature, pattern formation can be facilitated during the exposure process for forming the reinforcement pattern, thereby improving product yield.

[0040] Furthermore, embodiments can provide a reinforcement pattern in the bent portion, thereby increasing the rigidity of the fragile bent portion of the electrode portion. Consequently, embodiments can address the problem of electrical open circuits or cracks occurring in the bent portion of the electrode portion, thereby improving the electrical and / or physical reliability of the semiconductor package. Furthermore, embodiments can enable the semiconductor device provided in the semiconductor package to operate smoothly, thereby improving the operational reliability of electronic products, such as servers, that utilize the semiconductor package.

[0041] Furthermore, the electrode portion of the embodiment can include a bent portion, thereby increasing the integration of the electrode portion and shortening the electrical length of the electrode portion. Therefore, the embodiment can reduce the parasitic capacitance, parasitic inductance, parasitic resistance, etc. of the electrode portion, thereby effectively improving the overall impedance of the electrode portion and further miniaturizing the area of ​​the semiconductor package.

[0042] In addition, the electrode portion of the embodiment has a first side surface and a second side surface. In addition, the first side surface of the electrode portion may be provided with a convex portion of a reinforcement pattern, and the second side surface may be provided with a concave portion. The concave portion may be provided concavely from the second side surface of the electrode portion toward the first side surface. The concave portion may mitigate the electrical characteristics of the electrode portion that are changed due to the convex portion. Thus, the embodiment can further improve the electrical reliability of the electrode portion. For example, the electrode portion of the embodiment may have a reduced width in the region including the concave portion. Thus, the embodiment can effectively improve the impedance of the electrode portion, and thus can be used to improve the overall electrical characteristics of the electrode portion.

[0043] In addition, the electrode portion of the embodiment may be provided with a concave portion and a convex portion, thereby increasing the contact area between the insulating layer and the electrode portion. Thus, the embodiment can improve the adhesion between the electrode portion and the insulating layer, and can solve the problem of the electrode portion peeling off from the insulating layer. For example, the concave portion and / or the convex portion of the electrode portion may overlap with the insulating layer in the vertical direction and / or the horizontal direction, thereby strengthening the bonding strength in the vertical direction and / or the bonding strength in the horizontal direction between the electrode portion and the insulating layer. In addition, when each layer of the insulating layer is formed of a different insulating material, peeling in the vertical direction and / or the horizontal direction may occur due to the different thermal expansion coefficients between the different materials. Therefore, the embodiment is able to improve the electrical reliability of the electrode portion by using the concave portion and the convex portion, while improving the mechanical reliability by increasing the contact area with the insulating layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1a is a cross-sectional view showing a semiconductor package according to a first embodiment.

[0045] Figure 1b is a cross-sectional view showing a semiconductor package according to a second embodiment.

[0046] Figure 1c is a cross-sectional view showing a semiconductor package according to a third embodiment.

[0047] Figure 1d is a cross-sectional view showing a semiconductor package according to a fourth embodiment.

[0048] Figure 1e is a cross-sectional view showing a semiconductor package according to a fifth embodiment.

[0049] Figure 1f is a cross-sectional view showing a semiconductor package according to a sixth embodiment.

[0050] Figure 1g is a cross-sectional view showing a semiconductor package according to a seventh embodiment.

[0051] Figure 2 is a cross-sectional view showing a circuit board according to the first embodiment.

[0052] Figure 3 is a cross-sectional view showing a circuit board according to a second embodiment.

[0053] Figure 4 According to the first embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area.

[0054] Figure 5 According to the second embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area.

[0055] Figure 6 According to the third embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area.

[0056] Figure 7 According to the fourth embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area.

[0057] Figure 8 According to the fifth embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area.

[0058] Figure 9 According to the sixth embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area.

[0059] Figure 10 According to the seventh embodiment Figure 2 or Figure 3 An enlarged plan view of a portion of the area. DETAILED DESCRIPTION

[0060] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein the same reference numerals are used to represent the same or similar elements, and their repeated description will be omitted. The suffixes "module" and "part" of the components used in the following description are only given or mixed for the convenience of writing the specification, and there is no meaning or function to distinguish them from each other. Moreover, in the following description of the embodiments of the present invention, when it is determined that the main points of the embodiments disclosed herein may be blurred, the detailed description of the related art will be omitted. Moreover, the included drawings are used to provide a further understanding of the present invention, and the drawings are incorporated into and constitute a part of this specification, and it should be understood that the present invention is intended to cover all variations, equivalents or alternatives that fall within the spirit and scope of the present invention.

[0061] Terms including ordinal numbers (such as "first," "second," etc.) may be used to describe various components, but these constituent elements are not limited by these terms. These terms are only used to distinguish one component from another.

[0062] When a component is referred to as being “connected” or “in contact with” another component, it may be directly connected or coupled to the other component, but it should be understood that other components may exist between them. When a component is referred to as being “directly connected” or “in direct contact with” another component, it should be understood that other components may not exist between them.

[0063] Unless the context clearly implies otherwise, expressions in the singular include expressions in the plural.

[0064] In this application, terms such as "including" or "having" are used to indicate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification. However, it should be understood that these terms do not exclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0065] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0066] -Electronic equipment-

[0067] Before describing the embodiments, an electronic device to which the semiconductor package of the present embodiment is applied will be briefly described. The electronic device includes a mainboard (not shown). The mainboard can be physically and / or electrically connected to various components. For example, the mainboard can be connected to the semiconductor package of the present embodiment. Various semiconductor devices can be mounted on the semiconductor package.

[0068] Semiconductor devices may include active devices and / or passive devices. Active devices may be semiconductor chips in the form of integrated circuits (ICs), in which hundreds to millions of devices are integrated into a single semiconductor device. The semiconductor device may be a logic chip, a memory chip, or the like. The logic chip may be a central processing unit (CPU), a graphics processing unit (GPU), or the like. For example, the logic chip may be an application processor (AP) chip, an analog-to-digital converter, an application-specific integrated circuit (ASIC), or a chipset including at least one of a central processing unit (CPU), a graphics processing unit (GPU), a digital signal processor, a cryptographic processor, a microprocessor, and a microcontroller. The chipset may be a specific combination of the aforementioned chipsets.

[0069] The memory chip may be a stacked memory such as HBM. The memory chip may also include a memory chip such as a volatile memory (eg, DRAM), a non-volatile memory (eg, ROM), a flash memory, etc.

[0070] On the other hand, the product group applied to the semiconductor package of this embodiment can be any one of CSP (Chip Scale Package), FC-CSP (Flip Chip-Chip Scale Package), FC-BGA (Flip Chip Ball Grid Array), POP (Package on Package) and SIP (System in Package), but it is not limited thereto.

[0071] In addition, the electronic device may be a smartphone, a personal digital assistant, a digital camera, a digital still camera, a vehicle, a high-performance server, a network system, a computer, a display, a tablet computer, a laptop computer, a netbook, a television, a video game, a smart watch, an automobile, etc. However, the embodiment is not limited thereto, but may be any other electronic device that processes data in addition to the above.

[0072] Hereinafter, a semiconductor package including a circuit board according to an embodiment will be described. The semiconductor package of this embodiment may have various package structures including a circuit board described later.

[0073] In addition, the circuit board in one embodiment is the first circuit board described below. In addition, the circuit board in another embodiment is the second circuit board described below.

[0074] Figure 1a is a cross-sectional view showing a semiconductor package according to a first embodiment, Figure 1bis a cross-sectional view showing a semiconductor package according to a second embodiment, Figure 1c is a cross-sectional view showing a semiconductor package according to a third embodiment, Figure 1d is a cross-sectional view showing a semiconductor package according to a fourth embodiment, Figure 1e is a sectional view showing a semiconductor package according to a fifth embodiment, Figure 1f is a cross-sectional view showing a semiconductor package according to a sixth embodiment, and Figure 1g is a cross-sectional view showing a semiconductor package according to a seventh embodiment.

[0075] refer to Figure 1a , the semiconductor package according to the first embodiment includes a first circuit board 1100 , a second circuit board 1200 and a semiconductor device 1300 .

[0076] The first circuit board 1100 refers to a packaging substrate.

[0077] For example, the first circuit board 1100 provides a space for coupling with at least one external circuit board. In one embodiment, the external circuit board refers to the second circuit board 1200 coupled to the first circuit board 1100. In another embodiment, the external circuit board refers to a main board included in an electronic device coupled to the lower portion of the first circuit board 1100.

[0078] Also, although not shown in the drawings, the first circuit board 1100 provides a space in which at least one semiconductor device is mounted.

[0079] The first circuit board 1100 includes at least one insulating layer and an electrode portion disposed on the at least one insulating layer.

[0080] The second circuit board 1200 is disposed on the first circuit board 1100 .

[0081] The second circuit board 1200 may be an interposer. For example, the second circuit board 1200 provides space for mounting at least one semiconductor device. The second circuit board 1200 is connected to at least one semiconductor device 1300. For example, the second circuit board 1200 provides space for mounting a first semiconductor device 1310 and a second semiconductor device 1320. The second circuit board 1200 electrically connects the first and second semiconductor devices 1310 and 1320 to the first circuit board 1100, while also electrically connecting the first semiconductor device 1310 and the second semiconductor device 1320. In other words, the second circuit board 1200 provides a horizontal connection between multiple semiconductor devices and a vertical connection between the semiconductor devices and the package substrate.

[0082] Figure 1aThe first semiconductor device 1310 and the second semiconductor device 1320 are shown to be arranged on the second circuit board 1200, but are not limited thereto. In one embodiment, one semiconductor device is arranged on the second circuit board 1200. In another embodiment, three or more semiconductor devices may be arranged.

[0083] The second circuit board 1200 is disposed between the at least one semiconductor device 1300 and the first circuit board 1100 .

[0084] In an embodiment, the second circuit board 1200 may be an active interposer used as a semiconductor device. When the second circuit board 1200 is used as a semiconductor device, the semiconductor package of this embodiment may have a structure vertically stacked on the first circuit board 1100, and may have the functions of multiple logic chips. "Having the function of a logic chip" may mean that it may have the functions of an active device and a passive device. Unlike passive devices, in the case of active devices, the characteristics of current and voltage may not be linear, and in the case of an active interposer, it may have the function of an active device. In addition, the active interposer may play the function of a corresponding logic chip, and at the same time may play the function of signal transmission between the second logic chip arranged thereon and the first circuit board 1100.

[0085] According to another embodiment, the second circuit board 1200 may be a passive interposer. For example, the second circuit board 1200 may serve as a signal repeater between the semiconductor device 1300 and the first circuit board 1100 and may also include passive device functions such as resistors, capacitors, or inductors. For example, due to 5G, the Internet of Things (IoT), improved image quality, and increased communication speeds, the number of terminals in semiconductor devices 1300 is increasing. Specifically, the number of terminals provided in semiconductor devices 1300 is increasing, thereby reducing the width of the terminals or the spacing between the terminals. In this case, the first circuit board 1100 may be connected to the mainboard of the electronic device. This poses the following problems: the thickness of the first circuit board 1100 increases or the layer structure of the first circuit board 1100 becomes complex, requiring electrodes provided on the first circuit board 1100 to have a certain width and spacing to connect to the semiconductor device 1300 and the mainboard, respectively. Therefore, in the first embodiment, the second circuit board 1200 may be arranged between the first circuit board 1100 and the semiconductor device 1300. Furthermore, the second circuit board 1200 may include electrodes with a fine width and spacing corresponding to the terminals of the semiconductor device 1300.

[0086] Semiconductor device 1300 may be a logic chip, a memory chip, or the like. The logic chip may be a central processing unit (CPU), a graphics processing unit (GPU), or the like. For example, the logic chip may be an application processor (AP) chip including at least one of a central processing unit (CPU), a graphics processing unit (GPU), a digital signal processor, a cryptographic processor, a microprocessor, and a microcontroller, or an analog-to-digital converter, an application-specific integrated circuit (ASIC), or a chipset including a specific combination of the above. The memory chip may be a stacked memory such as HBM. The memory chip may also include memory chips such as volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, or the like.

[0087] Meanwhile, the semiconductor package of the first embodiment includes the connection portion.

[0088] The semiconductor package includes a first connection portion 1410 disposed between a first circuit board 1100 and a second circuit board 1200. The first connection portion 1410 electrically connects the second circuit board 1200 to the first circuit board 1100, while coupling the two.

[0089] The semiconductor package includes a second connection portion 1420 disposed between the second circuit board 1200 and the semiconductor device 1300. The second connection portion 1420 electrically connects the semiconductor device 1300 to the second circuit board 1200, coupling the two.

[0090] The semiconductor package includes a third connection portion 1430 disposed on a lower surface of the first circuit board 1100. The third connection portion 1430 electrically connects the first circuit board 1100 to the main board, coupling the two.

[0091] In this case, the first connection portion 1410, the second connection portion 1420, and the third connection portion 1430 can electrically connect the multiple components using at least one bonding method selected from wire bonding, solder bonding, and metal-to-metal direct bonding. Specifically, since the first connection portion 1410, the second connection portion 1420, and the third connection portion 1430 electrically connect the multiple components, when metal-to-metal direct bonding is used, the connection portions of the semiconductor package can be understood as being electrically connected, rather than solder or wires.

[0092] Wire bonding can refer to electrically connecting multiple components using conductive wires such as gold (Au). Furthermore, solder bonding can use a material containing at least one of Sn, Ag, and Cu to electrically connect multiple components. Furthermore, direct metal bonding can refer to directly bonding multiple components by applying heat and pressure between the components to cause recrystallization without the presence of solder, wires, conductive adhesives, etc. Furthermore, direct metal bonding can refer to a bonding method performed using second connection portion 1420. In this case, second connection portion 1420 can refer to a metal layer formed between the multiple components through recrystallization.

[0093] The first, second, and third connection parts 1410, 1420, and 1430 may couple components to each other through a thermocompression (TC) bonding method. Thermocompression bonding may refer to a method of directly coupling components by applying heat and pressure to the first, second, and third connection parts 1410, 1420, and 1430.

[0094] At this time, at least one of the first circuit board 1100 and the second circuit board 1200 may be provided with a protrusion protruding outward from the insulating layer of the corresponding circuit board, and the first connection portion 1410, the second connection portion 1420, and the third connection portion 1430 are arranged on the protrusion. The protrusion may protrude outward from the first circuit board 1100 or the second circuit board 1200.

[0095] The protrusion can be referred to as a bump. The protrusion can also be referred to as a post. The protrusion can also be referred to as a pillar. Preferably, the protrusion can refer to an electrode on the second circuit board 1200 on which the second connection portion 1420 for coupling to the semiconductor device 1300 is arranged. That is, as the pitch of the terminals of the semiconductor device 1300 becomes finer, short circuits may occur between the multiple second connection portions 1420 connected to the multiple terminals of the semiconductor device 1300 via a conductive adhesive such as solder. Therefore, in this embodiment, thermocompression bonding can be performed to reduce the volume of the second connection portion 1420. In addition, to ensure alignment and prevent diffusion, so as to prevent intermetallic compounds (IMCs) formed between the conductive adhesive such as solder and the protrusion from diffusing into the interposer and / or circuit board, a protrusion can be included in the electrode on the second circuit board 1200 on which the second connection portion 1420 is arranged.

[0096] At the same time, reference Figure 1bThe semiconductor package of the second embodiment differs from the semiconductor package of the first embodiment in that a connecting member 1210 is arranged on the second circuit board 1200. The connecting member 1210 can be called a bridge circuit board. For example, the connecting member 1210 can include a redistribution layer. The connecting member 1210 can play the function of electrically connecting multiple semiconductor devices to each other in the horizontal direction. For example, since the area that a semiconductor device should generally have is too large, the connecting member 1210 can include a redistribution layer. Since the semiconductor package and the semiconductor device have large differences in the width or spacing of the circuit pattern, the circuit pattern needs to have a buffering effect on the electrical connection. The buffering effect can refer to having a size between the width or spacing of the circuit pattern of the semiconductor package and the width or spacing of the circuit pattern of the semiconductor device, and the redistribution layer can include a function of playing a buffering role.

[0097] In one embodiment, the connection member 1210 may be an inorganic bridge. For example, the inorganic bridge may be a silicon bridge. In other words, the connection member 1210 may include a silicon circuit board and a redistribution layer disposed on the silicon circuit board.

[0098] In another embodiment, the connecting member 1210 may be an organic bridge. For example, the connecting member 1210 may include an organic material. For example, the connecting member 1210 may include an organic circuit board instead of a silicon circuit board, the organic circuit board including an organic material.

[0099] The connection member 1210 may be embedded in the second circuit board 1200, but is not limited thereto. For example, the connection member 1210 may be disposed on the second circuit board 1200 to have a protruding structure.

[0100] Also, the second circuit board 1200 may include a cavity, and the connection member 1210 may be disposed in the cavity of the second circuit board 1200 .

[0101] The connection member 1210 connects the plurality of semiconductor devices arranged on the second circuit board 1200 in a horizontal direction.

[0102] refer to Figure 1c , the semiconductor package according to the third embodiment includes a second circuit board 1200 and a semiconductor device 1300. In this case, the semiconductor package of the third embodiment may have a structure in which the first circuit board 1100 is removed, compared with the semiconductor package of the second embodiment.

[0103] That is, the second circuit board 1200 of the third embodiment can be used as a package substrate while functioning as an interposer.

[0104] The first connection portion 1410 disposed on the lower surface of the second circuit board 1200 may couple the second circuit board 1200 to a main board of the electronic device.

[0105] refer to Figure 1d , the semiconductor package according to the fourth embodiment includes a first circuit board 1100 and a semiconductor device 1300 .

[0106] In this case, the semiconductor package of the fourth embodiment may have a structure in which the second circuit board 1200 is omitted, compared with the semiconductor package of the second embodiment.

[0107] That is, the first circuit board 1100 of the fourth embodiment can function as a packaging circuit board while also connecting the semiconductor device 1300 to the main board. To this end, the first circuit board 1100 includes a connecting member 1110 for connecting the multiple semiconductor devices. The connecting member 1110 can be an inorganic bridge or an organic material bridge that connects the multiple semiconductor devices.

[0108] refer to Figure 1e Compared with the semiconductor package of the fourth embodiment, the semiconductor package of the fifth embodiment further includes a third semiconductor device 1330 .

[0109] To this end, the fourth connection portion 1440 is disposed on the lower surface of the first circuit board 1100 .

[0110] In addition, the third semiconductor device 1330 is disposed on the fourth connection portion 1400. That is, the semiconductor package of the fifth embodiment may have a structure in which semiconductor devices are mounted on the upper side and the lower side, respectively.

[0111] In this case, the third semiconductor device 1330 may have Figure 1c The semiconductor package is arranged on the lower surface of the second circuit board 1200.

[0112] refer to Figure 1f The semiconductor package according to the sixth embodiment includes a first circuit board 1100 . A first semiconductor device 1310 is disposed on the first circuit board 1100 . To this end, a first connection portion 1410 is disposed between the first circuit board 1100 and the first semiconductor device 1310 .

[0113] Furthermore, the first circuit board 1100 includes a conductive coupling portion 1450. The conductive coupling portion 1450 protrudes further from the first circuit board 1100 toward the second semiconductor device 1320. The conductive coupling portion 1450 may be referred to as a bump, or alternatively, a stud. The conductive coupling portion 1450 is arranged to have a structure protruding from the uppermost electrode arranged on the first circuit board 1100.

[0114] The second semiconductor device 1320 is disposed on the conductive coupling portion 1450. In this case, the second semiconductor device 1320 is connected to the first circuit board 1100 through the conductive coupling portion 1450. In addition, the second connection portion 1420 is disposed on the first semiconductor device 1310 and the second semiconductor device 1320.

[0115] Therefore, the second semiconductor device 1320 is electrically connected to the first semiconductor device 1310 through the second connection portion 1420 .

[0116] That is, the second semiconductor device 1320 may be connected to the first circuit board 1100 through the conductive coupling portion 1450 , and may also be connected to the first semiconductor device 1310 through the second connection portion 1420 .

[0117] In this case, the second semiconductor device 1320 may receive a power signal and / or electricity through the conductive coupling portion 1450. Also, the second semiconductor device 1320 may transmit and receive communication signals to and from the first semiconductor device 1310 through the second connection portion 1420.

[0118] The semiconductor package according to the sixth embodiment may provide a power signal and / or power to the second semiconductor device 1320 through the conductive coupling portion 1450 , thereby providing sufficient power to drive the second semiconductor device 1320 or achieving smooth control of power operation.

[0119] Therefore, this embodiment can improve the driving characteristics of the second semiconductor device 1320. In other words, this embodiment can solve the problem of insufficient power provided to the second semiconductor device 1320. In addition, in this embodiment, at least one of the power signal, electricity, and communication signal of the second semiconductor device 1320 can be provided via different paths through the conductive connection portion 1450 and the second connection portion 1420. As a result, this embodiment can solve the problem of communication signal loss due to the power signal. For example, this embodiment can minimize the mutual interference between the power signal and the communication signal.

[0120] Meanwhile, the second semiconductor device 1320 in the sixth embodiment may have a POP (Package on Package) structure, in which multiple package circuit boards are stacked and arranged on the first circuit board 1100. For example, the second semiconductor device 1320 may be a memory package including a memory chip. Furthermore, the memory package may be coupled to the conductive coupling portion 1450. In this case, the memory package may not be connected to the first semiconductor device 1310.

[0121] Meanwhile, the semiconductor package in the sixth embodiment includes a molding member 1460. The molding member 1460 is disposed between the first circuit board 1100 and the second semiconductor device 1320. For example, the molding member 1460 over-molds the first connection member 1410, the second connection member 1420, the first semiconductor device 1310, and the conductive coupling portion 1450.

[0122] refer to Figure 1g , the semiconductor package according to the seventh embodiment includes a first circuit board 1100 , a first connection portion 1410 , a third connection portion 1410 , a semiconductor device 1300 , and a third connection portion 1430 .

[0123] In this case, the semiconductor package of the seventh embodiment is different from the semiconductor package of the fourth embodiment in that the first circuit board 1100 includes a plurality of circuit board layers, and the connection member 1110 is omitted.

[0124] The first circuit board 1100 includes a plurality of circuit board layers. For example, the first circuit board 1100 includes a first circuit board layer 1100A corresponding to the package substrate and a second circuit board layer 1100B corresponding to the connection member.

[0125] In other words, the semiconductor package of the seventh embodiment includes a first circuit board layer 1100A and a second circuit board layer 1100B, wherein: Figure 1a The first circuit board (package circuit board 1100) and the second circuit board (interposer 1200) disclosed in the seventh embodiment are integrally formed. The insulating layer of second circuit board layer 1100B is made of a different material than that of first circuit board layer 1100A. For example, the insulating layer of second circuit board layer 1100B may include a photocurable material. For example, second circuit board layer 1100B may be a photoimageable dielectric (PID). Furthermore, since second circuit board layer 1100B includes a photocurable material, electrodes can be miniaturized. Therefore, in the seventh embodiment, second circuit board layer 1100B can be formed by sequentially stacking insulating layers of photocurable material on first circuit board layer 1100A and forming miniaturized electrodes on the insulating layers of photocurable material. Consequently, second circuit board layer 1100B can function as a redistribution layer including microelectrodes and can horizontally connect multiple semiconductor devices 1310 and 1320.

[0126] Before describing the circuit board of the embodiment, the circuit board described below may refer to any one of the circuit boards included in the semiconductor package described above. For example, the circuit board described below may refer to any one of the first circuit board 1100 and the second circuit board 1200 included in the semiconductor package of the first to seventh embodiments.

[0127] Figure 2is a sectional view showing a circuit board according to a first embodiment, Figure 3 is a sectional view showing a circuit board according to a second embodiment, Figure 4 According to the first embodiment Figure 2 or Figure 3 An enlarged plan view of a local area, Figure 5 According to the second embodiment Figure 2 or Figure 3 An enlarged plan view of a local area, Figure 6 According to the third embodiment Figure 2 or Figure 3 An enlarged plan view of a local area, Figure 7 According to the fourth embodiment Figure 2 or Figure 3 An enlarged plan view of a local area, Figure 8 According to the fifth embodiment Figure 2 or Figure 3 An enlarged plan view of a local area, Figure 9 According to the sixth embodiment Figure 2 or Figure 3 An enlarged plan view of a local area, and Figure 10 According to the seventh embodiment Figure 2 or Figure 3 An enlarged plan view of a local area.

[0128] Hereinafter, a circuit board provided in a semiconductor package according to an embodiment will be described in detail with reference to the accompanying drawings.

[0129] refer to Figure 2 and Figure 3 The circuit board of this embodiment includes an insulating layer 110 and an electrode portion 160 .

[0130] Insulation layer 110 includes multiple layers. Insulation layer 110 includes a first insulation layer 111, a second insulation layer 112, and a third insulation layer 113. First insulation layer 111 may constitute an inner layer of insulation layer 110. The term "constituting an inner layer" may mean that at least one insulation layer (e.g., a second insulation layer and a third insulation layer) is arranged above and below first insulation layer 111.

[0131] The second insulating layer 112 is disposed on the first insulating layer 111. For example, the second insulating layer 112 may be the uppermost insulating layer of the circuit board. The second insulating layer 112 may protect the upper surface of the first insulating layer 111 and may therefore be referred to as a "first protective layer."

[0132] The third insulating layer 113 is disposed below the first insulating layer 111. For example, the third insulating layer 113 may be the insulating layer disposed at the bottom of the circuit board. The third insulating layer 113 may have the function of protecting the lower surface of the first insulating layer 111 and may therefore be referred to as a "second protective layer."

[0133] The first insulating layer 111 of the circuit board may have a layer structure with at least one layer. Preferably, the first insulating layer 111 of the circuit board may have multiple stacked structures. These stacked structures may be distinguished by the electrode portions. For example, the electrode portions may include a first electrode portion 120 and a second electrode portion 130. The first electrode portions 120 may be arranged in multiple units and spaced apart from each other in the vertical direction. For example, the first electrode portion 120 may include an upper electrode portion arranged on the first insulating layer 111 and a lower electrode portion arranged below the first insulating layer 111. The upper electrode portion and the lower electrode portion may be spaced apart from each other in the vertical direction. The second electrode portion 130 may be arranged between the multiple first electrode portions. The second electrode portion 130 may be arranged to vertically penetrate at least a portion of the area of ​​the first insulating layer 111. The horizontal width of the second electrode portion 130 may be different from the horizontal width of the first electrode portion 120. Furthermore, the vertical thickness of the second electrode portion 130 may be different from the vertical thickness of the first electrode portion 120. Furthermore, the second electrode portion 130 may have a vertical cross-sectional shape that is different from the vertical cross-sectional shape of the first electrode portion 120. Therefore, the stacked structure of the first insulating layer 111 can be differentiated based on at least one of a difference in width, a difference in thickness, and a difference in vertical cross-sectional shape between the first electrode portion 120 and the second electrode portion 130. The circuit board of this embodiment can efficiently electrically connect at least one semiconductor device and / or a second circuit board to the main board via the stacked structure.

[0134] at the same time, Figure 2 The first insulating layer 111 of the circuit board is shown as having a five-layer structure, but it is not limited thereto. For example, the first insulating layer 111 of the circuit board may have a structure as follows: Figure 3 The first insulating layer 111 of another embodiment may have a stacked structure of three or fewer layers. The first insulating layer 111 of another embodiment may have a stacked structure of six or more layers.

[0135] When the plurality of layers of the first insulating layer 111 include the same insulating material, interfaces between the plurality of layers may not be distinguishable. In this case, the stacked structure may be distinguished by the first electrode portion 120 and the second electrode portion 130.

[0136] Meanwhile, when the first insulating layer 111 of the circuit board has a multi-layer structure, the multiple layers of the first insulating layer may include the same insulating material, but is not limited thereto. For example, at least one of the multiple layers of the first insulating layer may include an insulating material different from that of at least one other first insulating layer.

[0137] For example, at least one of the plurality of layers of the first insulating layer 111 may include a reinforcing member. In one embodiment, the reinforcing member may be glass fiber. In another embodiment, the reinforcing member may be GCP (Glass Core Primer).

[0138] Additionally, in another embodiment, the plurality of layers of the first insulating layer 111 may not include reinforcing members such as glass fiber and / or GCP.

[0139] The insulating layer 110 of the circuit board includes a second insulating layer 112 and a third insulating layer 113 .

[0140] The second insulating layer 112 may include the same insulating material as the first insulating layer 111. For example, when the first insulating layer 111 of the circuit board is composed of multiple layers, the first insulating layer closest to the second insulating layer 112 among the multiple first insulating layers may include the same insulating material as the second insulating layer 112. In this case, the interface between the first insulating layer 111 and the second insulating layer 112 of the circuit board may be indistinguishable. Correspondingly, the third insulating layer 113 of the circuit board may include the same insulating material as the first insulating layer 111 of the circuit board.

[0141] The second insulating layer 112 and the third insulating layer 113 of the circuit board can respectively have the function of protecting the upper surface and the lower surface of the first insulating layer 111 of the circuit board. Therefore, the second insulating layer 112 and the third insulating layer 113 of the circuit board can be referred to as protective layers. The second insulating layer 112 and the third insulating layer 113 of the circuit board can be solder resist layers comprising an organic polymer material. For example, the second insulating layer 112 and the third insulating layer 113 of the circuit board can comprise epoxy acrylate resin. Specifically, the second insulating layer 112 and the third insulating layer 113 of the circuit board can comprise a resin, a curing agent, a photoinitiator, a pigment, a solvent, a filler, an additive, an acrylic monomer, and the like. However, this embodiment is not limited thereto, and the second insulating layer 112 and the third insulating layer 113 of the circuit board can be any one of a photoresist layer, a cover layer, and a polymer material.

[0142] The circuit board includes an electrode portion. The electrode portion includes a first electrode portion 120 disposed on a first insulating layer 111. Furthermore, the first electrode portion 120 includes a second electrode portion 130 that penetrates at least a portion of the area of ​​the first insulating layer 111. The first electrode portion 120 may include a pad electrode and / or a trace electrode. Furthermore, the second electrode portion 130 may include a through-electrode or a via electrode.

[0143] At this time, the first electrode portion 120 and the second electrode portion 130 may have different arrangement structures depending on a manufacturing method of the circuit board.

[0144] For example, reference Figure 2 , the first electrode portion arranged at the uppermost side among the first electrode portions 120 may have a structure protruding above the first insulating layer 111. In addition, the first electrode portion arranged at the lowermost side among the first electrode portions 120 may have a structure protruding below the first insulating layer 111. Thus, the side surfaces of the first electrode portions located at the uppermost side and the lowermost side, respectively, may not be in contact with the first insulating layer 111. For example, the side surfaces of the first electrode portions located at the uppermost side and the lowermost side, respectively, may be covered by the second insulating layer 112 or the third insulating layer 113.

[0145] At the same time, reference Figure 3 In another embodiment, at least one of the uppermost and lowermost first electrode portions 120 may have an ETS (Embedded Trace Substrate) structure. For example, the uppermost first electrode portion of the first electrode portion 120 may have an ETS structure. For example, a recess may be provided on the upper surface of the first insulating layer 111, and at least a portion of the uppermost first electrode portion may be disposed within the recess. For example, at least a portion of the side surface of the uppermost first electrode portion may be covered by the first insulating layer 111. This ETS structure may also be referred to as a buried structure. Compared to electrode portions with a typical protruding structure, this ETS structure facilitates miniaturization. Therefore, this embodiment enables the formation of electrode portions that correspond to the size and pitch of terminals provided in the semiconductor device. This improves circuit integration. Furthermore, this embodiment minimizes the transmission distance of signals transmitted through the semiconductor device, thereby minimizing signal transmission loss.

[0146] The first electrode portion 120 may be provided on a surface of each of the plurality of layers of the first insulating layer 111. The second electrode portion 130 vertically connects the plurality of first electrode portions provided in different layers. The second electrode portion 130 penetrates at least a portion of the region of the first insulating layer 111. The second electrode portion 130 may also be referred to as a through-electrode or a via electrode.

[0147] When the first insulating layer 111 has a five-layer structure, the second electrode portion 130 of the electrode portion 120 may have a five-layer structure spaced apart from each other in the vertical direction. In this case, the first electrode portion 120 may be disposed between the second electrode portions 130 of the five-layer structure spaced apart from each other. Hereinafter, description will be made based on a specific first electrode portion 120 disposed on the first insulating layer 111 among the first electrode portions 120 disposed on each of the plurality of planes. For example, the first electrode portion described below may refer to the first electrode portion disposed on the uppermost side of the circuit board, but is not limited thereto.

[0148] The first electrode portion 120 includes a pad electrode 121 and a connection electrode 122 depending on functions.

[0149] The pad electrode 121 may refer to an electrode that vertically overlaps with the second electrode portion 130. The pad electrode 121 may refer to an electrode that vertically overlaps with the protruding electrode 140 described below. For example, the pad electrode 121 may refer to an electrode that vertically overlaps with a semiconductor device arranged on the protruding electrode 140 and / or a terminal of an external substrate. The pad electrode 121 may be provided in plurality and spaced apart from each other. For example, the pad electrode 121 may include a plurality of pads spaced apart in the horizontal direction.

[0150] First, the protruding electrode 140 will be described. The protruding electrode 140 can be arranged on the uppermost side of the circuit board and can protrude above the circuit board. The protruding electrode 140 can penetrate at least a portion of the area of ​​the second insulating layer 112. The protruding electrode 140 can be provided on the pad electrode 121 of the uppermost first electrode portion 120 in the first electrode portion 120. The protruding electrode 140 can be a bump for bonding with a semiconductor device.

[0151] The protruding electrode 140 may be positioned higher than the upper surface of the second insulating layer 112. Thus, this embodiment may facilitate a mounting process of bonding a semiconductor device to the protruding electrode 140.

[0152] That is, due to the miniaturization of the width and pitch of the terminals of the semiconductor device bonded to the circuit board, when the semiconductor device is mounted using a conductive adhesive such as solder, diffusion of the conductive adhesive may occur, which may cause problems in connecting multiple conductive adhesives to each other. Therefore, the present embodiment can perform thermal compression bonding to reduce the volume of the conductive adhesive. Therefore, the present embodiment can be provided with a protruding electrode 140 that protrudes above the circuit board (for example, protrudes above the second insulating layer 112) to ensure alignment, diffusion force, and anti-diffusion capability to prevent intermetallic compounds (IMCs) formed between the conductive adhesive such as solder and the protrusion from diffusing into the interposer and / or circuit board. However, the present embodiment can perform the bonding process of the semiconductor device by methods other than thermal compression bonding.

[0153] The connecting electrode 122 may refer to an electrode connected to the pad electrode 121. For example, the connecting electrode 122 may refer to an electrode connected to the pad electrode 121 arranged on the same layer. The connecting electrode 122 may be arranged to extend long along the horizontal direction. The connecting electrode 122 may connect multiple pads of the pad electrode 121 along the horizontal direction. The upper surface of the connecting electrode 122 may include widths and lengths along different horizontal directions. At this time, the width of the connecting electrode 122 may be smaller than the length of the connecting electrode 122. Therefore, the meaning of "the connecting electrode 122 extends long along the horizontal direction" can be interpreted as the meaning of "the length of the upper surface of the connecting electrode 122 extends long along the horizontal direction".

[0154] That is, each of the plurality of pads of the pad electrode 121 may be connected to the second electrode portion 130, and the plurality of pads connected to the second electrode portion 130 may be connected by the connection electrode 122. Therefore, the connection electrode 122 may be referred to as a trace.

[0155] The pad electrode 121 and the connecting electrode 122 of the first electrode portion 120 have different widths in the horizontal direction. For example, the planar shape of the pad electrode 121 may be circular. In this case, the width of the pad electrode 121 in the horizontal direction may represent the diameter of the pad electrode 121. In another embodiment, the planar shape of the pad electrode 121 may be an elliptical shape. When the planar shape of the pad electrode 121 is an elliptical shape, the width of the pad electrode 121 in the horizontal direction may represent the width of the pad electrode 121 in the short axis direction or the width in the long axis direction.

[0156] At this time, the pad electrode 121 of the first electrode portion 120 of this embodiment may have an elliptical shape. When the pad electrode 121 has an elliptical shape, the density of the connection electrode 122 arranged in a limited space can be increased without reducing the contact area between the pad electrode 121 and the protruding electrode 140, thereby improving the circuit integration. For example, the connection electrode 122 is arranged to extend in one direction between the multiple pads of the pad electrode 121. For example, Figure 4 As shown, connection electrode 122 may have a structure extending in the first horizontal direction HD1, with multiple pads interposed between connection electrodes 122. In this case, if pad electrode 121 has a circular shape, assuming that the planar areas of circular and elliptical pad electrodes are the same, the width in the second horizontal direction HD2 is reduced compared to the case of an elliptical shape, but the width in the first horizontal direction HD1 may be increased compared to the case of an elliptical shape. Therefore, when pad electrode 121 has a circular shape, the number of connection electrodes 122 arranged between multiple pads spaced apart from each other in the second horizontal direction HD2 may be reduced, thereby reducing circuit integration or increasing the area of ​​the circuit board. Therefore, according to embodiments, pad electrode 121 may have an elliptical shape.

[0157] refer to Figure 4 , the width W1 of the pad electrode 121 in the horizontal direction may be within a range of 20 μm to 80 μm. Preferably, the width W1 of the pad electrode 121 in the horizontal direction may be within a range of 30 μm to 70 μm. More preferably, the width W1 of the pad electrode 121 in the horizontal direction may be within a range of 35 μm to 65 μm. The width W1 of the pad electrode 121 in the horizontal direction may refer to the width of the pad electrode 121 in the second horizontal direction HD2.

[0158] If the width W1 of the pad electrode 121 in the horizontal direction is less than 20 μm, the contact area between the pad electrode 121 and the second electrode portion 130 and / or the protruding electrode 140 may be reduced, which may cause peeling therebetween. In addition, if the width W1 of the pad electrode 121 in the horizontal direction is less than 20 μm, the volume of the conductive adhesive used for bonding with the semiconductor device may be reduced, and therefore, stable electrical and / or physical bonding with the semiconductor device may be difficult. If the width W1 of the pad electrode 121 in the horizontal direction exceeds 80 μm, it may be difficult to place all the pad electrodes 121 connected to the semiconductor device within a limited space. As a result, the area of ​​the circuit board may increase. In addition, the transmission distance of the signal exchanged with the semiconductor device may increase, and therefore the signal transmission loss may increase. Therefore, the semiconductor device may operate unstably, and furthermore, the communication characteristics may deteriorate.

[0159] The plurality of pads of the pad electrode 121 may be spaced apart along the first horizontal direction HD1 and / or the second horizontal direction HD2. Figure 4 The plurality of pads spaced apart from each other may include a first group that overlaps along the second horizontal direction HD2, and a second group spaced apart from the first group along the first horizontal direction. Furthermore, the plurality of pads included in the second group may overlap along the second horizontal direction HD2. Spaces between the plurality of pads included in the first group in the second horizontal direction HD2 may overlap with the plurality of pads included in the second group along the first horizontal direction HD1. Thus, the plurality of pads may be arranged in a zigzag manner to increase integration density.

[0160] The pads of the pad electrodes 121 may be spaced apart from each other at a certain distance in the horizontal direction. For example, the spacing D1 between the pad electrodes 121 spaced apart in the second horizontal direction HD2 may be within a range of 15 μm to 35 μm. If the spacing D1 between the pad electrodes 121 is less than 15 μm, the spacing between the connection electrodes 122 arranged between the pad electrodes 121 may be reduced, which may cause a short circuit problem where the multiple connection electrodes are electrically connected to each other. In addition, if the spacing D1 between the pad electrodes 121 exceeds 35 μm, the circuit integration may be correspondingly reduced, and the area of ​​the circuit board and semiconductor package may be increased.

[0161] The connection electrode 122 is connected to the pad electrode 121. The connection electrode 122 may be provided in plural and disposed between the plurality of pads of the pad electrode 121. Here, "provided in plural" may mean that a plurality of lines of the connection electrode 122 spaced apart from each other are arranged between two adjacent pads.

[0162] The width W2 of the connecting electrode 122 in the horizontal direction may be within a range of 2 μm to 8 μm. Preferably, the width W2 of the connecting electrode 122 in the horizontal direction may be within a range of 2 μm to 7.5 μm. More preferably, the width W2 of the connecting electrode 122 in the horizontal direction may be within a range of 2 μm to 5 μm. At this time, the width W2 of the connecting electrode 122 in the horizontal direction may refer to the horizontal distance between the first side surface and the second side surface opposite to each other of the connecting electrode 122. In addition, referring to Figure 4 The connection electrode 122 is arranged to extend along the first horizontal direction HD1. That is, the length of the connection electrode 122 in the first horizontal direction HD1 is longer than the length in the second horizontal direction HD2. Therefore, the width of the connection electrode 122 may refer to the length of the connection electrode 122 in the second horizontal direction HD2.

[0163] In addition, the connecting electrode 122 may include multiple side surfaces. For example, the connecting electrode 122 may include first to fourth side surfaces. The first to fourth side surfaces of the connecting electrode 122 extend vertically from the upper surface of the connecting electrode 122 toward the lower surface. In this case, two of the first to fourth side surfaces of the connecting electrode 122 are in physical contact with different pads. In addition, the other two of the first to fourth side surfaces of the connecting electrode 122 are not in physical contact with the pads. Therefore, the horizontal width W2 of the connecting electrode 122 may refer to the horizontal distance between the two side surfaces of the connecting electrode 122 that are not in physical contact with the pads.

[0164] If the horizontal width W2 of the connecting electrode 122 is less than 2 μm, the connecting electrode 122 may easily collapse or crack due to external impact during the manufacturing process, and thus, the mechanical and electrical properties may deteriorate. In addition, if the horizontal width W2 of the connecting electrode 122 is less than 2 μm, due to deviations in the electroplating process for manufacturing the connecting electrode 122, an unplated open-circuit area may be provided in a specific area, and an electrical open circuit problem may occur accordingly. In addition, if the horizontal width W2 of the connecting electrode 122 exceeds 8 μm, it may be difficult to arrange all the lines of the connecting electrode 122 within a limited space, and thus the circuit integration may be reduced or the area of ​​the circuit board may be increased. In addition, if the horizontal width W2 of the connecting electrode 122 exceeds 8 μm, the spacing between multiple connecting electrodes may become smaller in order to arrange all the lines of the connecting electrodes within a limited space, and thus a short circuit problem may occur in which multiple connecting electrodes are electrically connected to each other.

[0165] Meanwhile, the interval D2 between the plurality of connection electrodes 122 may be within a range of 2 μm to 8 μm. Preferably, the interval D2 between the plurality of connection electrodes 122 may be within a range of 2 μm to 7.5 μm. More preferably, the interval D2 between the plurality of connection electrodes 122 may be within a range of 2 μm to 5 μm.

[0166] If the spacing D2 between the multiple connection electrodes 122 is less than 2 μm, a short circuit may occur where adjacent connection electrodes are electrically connected to each other. If the spacing D2 between the multiple connection electrodes 122 is less than 2 μm, interference may occur between signals transmitted through adjacent connection electrodes 122, which may degrade signal transmission characteristics. Furthermore, if the spacing D2 between the multiple connection electrodes 122 exceeds 8 μm, it may be difficult to arrange all the lines of the connection electrodes 122 within a limited space, thereby potentially reducing circuit integration or increasing the area of ​​the circuit board and semiconductor package.

[0167] In addition, the connection electrode 122 is provided by being bent at least once in a horizontal direction on the first insulating layer 111 .

[0168] Specifically, the multiple pads of the pad electrode 121 on the first insulating layer 111 may not be arranged at uniform intervals along the first horizontal direction HD1 and the second horizontal direction HD2. For example, the multiple pads of the pad electrode 121 may be arranged in a staggered pattern along the first horizontal direction HD1 and / or the second horizontal direction HD2 on the first insulating layer 111. For example, the multiple pads of the pad electrode 121 may include multiple groups that overlap with each other in the second horizontal direction HD2. The multiple groups may be spaced apart from each other in the first horizontal direction HD1. In this case, two adjacent groups may not overlap in the first horizontal direction HD1.

[0169] For example, when the pads of the first group and the pads of the second group are arranged adjacent to each other, the pads of the first group may be spaced apart from each other in the second horizontal direction HD2, the pads of the second group may be spaced apart from each other in the second horizontal direction HD2, and the pads of the first group and the pads of the second group may not overlap with each other in the first horizontal direction HD1 while being spaced apart from each other in the first horizontal direction HD1. For example, the pads of the second group may overlap with the spacing area between the pads of the first group in the first horizontal direction HD1.

[0170] The connection electrode 122 may be disposed between the plurality of pads of the pad electrode 121 disposed in a staggered manner. The connection electrode 122 may be provided while avoiding the arrangement position of the plurality of pads of the pad electrode 121.

[0171] For example, the plurality of pads 121 of the pad electrode 121 may have a width greater than that of the connection electrode 122. Figure 4 Among the multiple pads of the pad electrode 121, the pads that are most adjacent to each other along the second horizontal direction HD2 can be arranged to be staggered along the first horizontal direction HD1. Furthermore, the connecting electrode 122 can include a first portion 122a and a second portion 122b. The first portion 122a extends between the multiple pads along the first horizontal direction HD1, and the second portion 122b is disposed between the first portion 122a and has a predetermined inclination angle with respect to the first horizontal direction HD1 and / or the second horizontal direction HD2. Furthermore, the region where the first portion 122a and the second portion 122b connect can be referred to as a bend 122c. To ensure that the connecting electrode 122 is arranged to extend to the spacing between the multiple pads of the pad electrode 121, the bend 122c can be included, thereby increasing the integration density of the circuit and reducing the area of ​​the semiconductor package.

[0172] The width of the connecting electrode 122 may refer to the length of the first portion 122a in the second horizontal direction HD2, and the width of the connecting electrode 122 may be greater than or equal to 2μm but less than or equal to 8μm. As described in this embodiment, if the width of the connecting electrode 122 is small, the pattern of the bent portion may not be properly formed during the exposure process, or various problems may arise, such as cracking or peeling caused by impact or heat generated during product operation, or current concentration caused by fringe fields of the electric field. Therefore, a reinforcement pattern 122c1 may be provided in the bent portion 122c to address these issues. The reinforcement pattern 122c1 may have the effect of widening the width of the connecting electrode 122 in the bent portion 122c. This effectively addresses the issues of cracking, peeling, and pattern formation during the exposure process. However, it is advantageous to form a small reinforcement pattern 122c1 so as not to affect the overall impedance variation of the semiconductor substrate.

[0173] Reinforcement pattern 122c1 can be configured with a protruding shape toward pad 121. The shortest length of bent portion 122c in the horizontal direction toward pad 121 can be longer than the length between first portion 122a of the connection electrode and the pad in the second horizontal direction HD2. When reinforcement pattern 122c1 has such a protruding shape, current concentration in bent portion 122c can be reduced, thereby maintaining a more uniform current distribution. Furthermore, when the protruding shape of reinforcement pattern 122c1 has a curvature, pattern formation can be facilitated during the exposure process used to form reinforcement pattern 122c1, thereby improving yield.

[0174] Specifically, the connecting electrode 122 may include a first portion 122a and a second portion 122b extending in different horizontal directions, respectively. The connecting electrode 122 may include a bent portion 122c disposed between the first portion 122a and the second portion 122b. In one embodiment, the bent portion 122c may be bent at a specific radius of curvature in the horizontal direction. In another embodiment, the bent portion 122c may be bent at a right angle or a specific obtuse angle. In this case, the first portion 122a and the second portion 122b may be referred to as extensions of the connecting electrode 122, and the bent portion 122c may be referred to as a bent portion of the connecting electrode 122. Here, reference is made to Figure 6 , the first portion 122a may refer to a portion extending in the first horizontal direction HD1, and the second portion 122b may refer to a portion having a predetermined inclination angle with respect to the first horizontal direction HD1 and / or the second horizontal direction HD2.

[0175] For example, the first portion 122a of the connecting electrode 122 may extend along the first horizontal direction HD1 on the first insulating layer 111, the second portion 122b of the connecting electrode 122 may extend in the second horizontal direction HD2 perpendicular to the first horizontal direction HD1, and the bent portion 122c of the connecting electrode 122 may be bent to connect them.

[0176] For example, the first portion 122a of the connecting electrode 122 may extend along the first horizontal direction HD1 on the first insulating layer 111, the second portion 122b of the connecting electrode 122 may extend in a diagonal direction between the first horizontal direction HD1 and the second horizontal direction HD2, and the bent portion 122c of the connecting electrode 122 may be bent to connect them.

[0177] For example, the first portion 122a of the connecting electrode 122 may extend along the second horizontal direction HD2 on the first insulating layer 111, the second portion 122b of the connecting electrode 122 may extend in a diagonal direction between the first horizontal direction HD1 and the second horizontal direction HD2, and the bent portion 122c of the connecting electrode 122 may be bent to connect them.

[0178] For example, the first portion 122a of the connecting electrode 122 may extend on the first insulating layer 111 along a first diagonal direction between the first horizontal direction HD1 and the second horizontal direction HD2, the second portion 122b of the connecting electrode 122 may extend in a second diagonal direction between the first horizontal direction HD1 and the second horizontal direction HD2, and the bent portion 122c of the connecting electrode 122 may be bent to connect them.

[0179] Therefore, through the bent portion 122c, the integration of the connecting electrode 122 can be improved, thereby shortening the electrical length of the connecting electrode 122, and effectively improving the overall impedance of the connecting electrode 122 by reducing parasitic capacitance, parasitic inductance, parasitic resistance, etc., and there is an advantage of miniaturizing the area of ​​the semiconductor package.

[0180] In this case, the connection electrode 122 may have a fine pattern. As described, the width W2 of the connection electrode 122 may be 8 μm or less, 6 μm or less, 5 μm or less, or 4 μm or less. As a result, the electrical reliability and / or physical reliability of the bent portion 122 c of the connection electrode 122 may be reduced.

[0181] For example, if the connection electrode 122 has a width exceeding 8 μm, electrical reliability and / or physical reliability problems may not occur at the bent portion. However, it may be difficult to miniaturize the area of ​​the semiconductor package and to effectively improve the overall impedance of the connection electrode 122.

[0182] If connecting electrode 122 is a fine pattern with a width of 8 μm or less, plating may not be performed smoothly at the bent portion 122 c of connecting electrode 122, depending on the plating process capabilities of the manufacturing process used to produce connecting electrode 122. For example, a dry film may be disposed on first insulating layer 111, and through exposure and development, the dry film may have an opening corresponding to connecting electrode 122. In this case, due to the characteristics of the dry film exposure and development processes, the exposure resolution and / or development resolution in the area corresponding to the bent portion may be reduced. As a result, development may not be performed in the area of ​​the dry film corresponding to the bent portion, or may be performed at a value lower than the target value. Consequently, since connecting electrode 122 is not plated in the bent portion, an electrical open circuit may occur. Furthermore, even if an electrical open circuit does not occur, stress caused by external impact may concentrate at the bent portion, potentially causing collapse or cracking of connecting electrode 122. In addition, the horizontal width of the connection electrode 122 in the bent portion may be reduced, and as a result, the impedance matching characteristics affected by the length, width, and thickness of the connection electrode 122 may be reduced. This may cause difficulties in impedance matching between the circuit board and the semiconductor package.

[0183] Therefore, the present embodiment provides a reinforcement pattern 122c1 in the bent portion 122c of the connection electrode 122. The reinforcement pattern 122c1 may refer to a step in which the width of the bent portion 122c of the connection electrode 122 varies. Preferably, the reinforcement pattern 122c1 may refer to a horizontal step in which the width of the bent portion 122c of the connection electrode 122 increases, or may refer to a step at the side surface of the connection electrode 122.

[0184] Specifically, the bent portion 122c of the connecting electrode 122 may be provided with a reinforcement pattern 122c1, thereby improving the electrical and physical properties of the bent portion 122c of the connecting electrode 122. For example, this embodiment may provide the reinforcement pattern 122c1 in the bent portion 122c of the connecting electrode 122 to increase the rigidity of the connecting electrode 122, thereby resolving issues with collapse or cracking of the connecting electrode 122. Furthermore, this embodiment may further provide the reinforcement pattern 122c1 disposed in the bent portion 122c of the connecting electrode 122, such that the width of the reinforcement pattern 122c1 is greater than the width of the first portion 122a and / or second portion 122b adjacent to the reinforcement pattern. Thus, this embodiment can resolve the issue of electrical open circuits occurring in the bent portion 122c of the connecting electrode 122, thereby improving electrical reliability.

[0185] For example, the bent portion 122c of the connecting electrode 122 may refer to the boundary region between the first portion 122a and the second portion 122b of the connecting electrode 122. The horizontal width of the bent portion 122c of the connecting electrode 122 may be greater than the horizontal width of the first portion 122a and / or the horizontal width of the second portion 122b. For example, the bent portion 122c of the connecting electrode 122 may include a first side surface 122cs1 and a second side surface 122cs2 facing away from each other. At least one of the first side surface 122cs1 and the second side surface 122cs2 of the bent portion 122c of the connecting electrode 122 may include a protruding portion that protrudes outward and corresponds to the reinforcement pattern 122c1. The horizontal width of the bent portion 122c of the connecting electrode 122 may be greater than the horizontal width of the first portion 122a and / or the second portion 122b by a horizontal distance from the protrusion.

[0186] Meanwhile, the reinforcement pattern 122c1 may be provided on both the first side surface 122cs1 and the second side surface 122cs2 of the bent portion 122c, but in another embodiment, may be provided on only one of the first side surface 122cs1 and the second side surface 122cs2. In this case, when the reinforcement pattern 122c1 is provided on only one of the first side surface 122cs1 and the second side surface 122cs2, the reinforcement pattern 122c1 may be provided on the side surface having a relatively short length of the first side surface 122cs1 and the second side surface 122cs2. For example, the side surface of the bent portion 122c may be divided into an inner side surface and an outer side surface according to the bending direction. For example, in Figure 4 In the upper right corner enlarged view of FIG, first side surface 122cs1 may be the inner side surface, while second side surface 122cs2 may be the outer side surface. When bent portion 122c is configured in this manner, the portion corresponding to first side surface 122cs1 may be relatively less impact-resistant than the portion corresponding to second side surface 122cs2. Therefore, in this embodiment, when reinforcement pattern 122c1 is provided on only one of first side surface 122cs1 and second side surface 122cs2, the reinforcement pattern is provided on first side surface 122cs1, corresponding to the inner side surface of bent portion 122c, thereby increasing the rigidity of bent portion 122c.

[0187] Furthermore, in this embodiment, by providing the reinforcing pattern 122c1 on the bent portion 122c, the bent portion 122c can have a desired horizontal width, thereby improving the impedance characteristics determined by the width, length, and thickness of the connection electrode 122. In other words, this embodiment can match the impedance characteristics with the designed value, thereby smoothly performing impedance matching and facilitating impedance control.

[0188] Furthermore, by providing a reinforcement pattern 122c1 on the side surface of the connecting electrode 122 corresponding to the protruding portion, this embodiment can increase the contact area with the insulating layer 110 by an amount equal to the area of ​​the reinforcement pattern 122c1. Thus, this embodiment can improve the adhesion between the connecting electrode 122 and the insulating layer 110 and address the issue of the connecting electrode 122 peeling off from the insulating layer 110. For example, the reinforcement pattern 122c1 can overlap the insulating layer 110 vertically and / or horizontally, thereby enhancing the vertical and / or horizontal bonding strength between the connecting electrode 122 and the insulating layer 110. Furthermore, when each layer of the insulating layer 110 is made of different insulating materials, vertical and / or horizontal peeling may occur due to the different thermal expansion coefficients between the different materials. In addition to increasing the rigidity of the connecting electrode 122, the reinforcement pattern 122c1 can also increase the contact area with the insulating layer 110, thereby enhancing the bonding strength between them.

[0189] At the same time, reference Figure 5 In this embodiment, the connection electrode 122 may have a plurality of bending portions, and the reinforcement pattern 122c1 may be disposed only on a specific bending portion among the plurality of bending portions.

[0190] The connection electrode 122 may have a fine width W2 within the above range.

[0191] However, the connection electrode 122 may have a different width for each region on the first insulating layer 111 .

[0192] That is, the connection electrode 122 may include a region requiring a fine width and a region not requiring a fine width in the entire region on the first insulating layer 111 .

[0193] The reinforcement pattern 122c1 may be disposed in a bent portion of the connection electrode 122 disposed in a region requiring a fine width. In addition, the reinforcement pattern 122c1 may be disposed in a bent portion of the connection electrode 122 disposed in a region requiring no fine width.

[0194] For example, the connection electrode 122 may be provided in a plurality of regions, and the plurality of regions may include a first region, a second region, and a third region.

[0195] The first region may be a region where a fine width of the connection electrode 122 is required, and the second region and the third region may be regions where a fine width of the connection electrode 122 is not required.

[0196] The connection electrode 122 may include a first connection electrode 122 - 1 disposed in the first region, a second connection electrode 122 - 2 disposed in the second region, and a third connection electrode 122 - 3 disposed in the third region.

[0197] The first connection electrode 122-1 may have a width W2 in the range of 2 μm to 8 μm. For example, the first connection electrode 122-1 may be arranged as a plurality of lines between the plurality of pads of the pad electrode 121. The number of lines of the first connection electrode 122-1 arranged in the first region may be greater than the number of lines of the second connection electrode 122-2 arranged in the second region. Therefore, for the sake of integration, each line of the first connection electrode 122-1 arranged in the first region may require a finer line width than the second connection electrode 122-2 arranged in the second region.

[0198] For example, the pad of the pad electrode 121 may include a first pad and a second pad, and the three lines of the first connection electrode 122-1 may be disposed between the first pad and the second pad. In this case, the spacing D1 between the first pad and the second pad may be the same as the described range, and in order to place the three lines of the first connection electrode 122-1 within the spacing D1, a fine width of the first connection electrode 122 may be required. Therefore, a reinforcement pattern 122c1 having a step whose width varies in the horizontal direction may be provided in the bent portion 122c of the first connection electrode 122 disposed in the first region.

[0199] In addition, each of the second and third connection electrodes 122-2 and 122-3 may have a width W3 greater than that of the first connection electrode 122-1. The width W3 of the second and third connection electrodes 122-2 and 122-3 may satisfy a range of 130% to 250% of the width W2 of the first connection electrode 122-1.

[0200] Specifically, the pads of the pad electrode 121 may include a third pad and a fourth pad, and a second connection electrode 122-2 having fewer lines than the first connection electrode 122-1 may be provided between the third pad and the fourth pad. For example, the number of lines of the second connection electrode 122-2 may be 2 or less.

[0201] In this case, the spacing between the third and fourth pads can be the same as the spacing between the first and second pads. The two lines of second connection electrode 122-2 can be arranged between the third and fourth pads. Therefore, the horizontal width W3 of second connection electrode 122-2 can be greater than the horizontal width of first connection electrode 122-1. Furthermore, because second connection electrode 122-2 has a relatively large horizontal width compared to first connection electrode 122-1, the rigidity of the second connection electrode can be maintained even without reinforcing pattern 122c1 in the bent portion. Therefore, reinforcing pattern 122c1 can be omitted in the bent portion of second connection electrode 122-2.

[0202] Furthermore, the third connection electrode 122-3 may include multiple lines, and no pad electrode 121 may be provided between the third connection electrodes 122-3. Therefore, the unit area occupied by each line of the third connection electrode 122-3 in the third region may be larger than the area occupied by each line of the first connection electrode 122-1 in the first region. Therefore, the third connection electrode 122-3 may not require a fine width and may have a relatively larger width W3 than the first connection electrode 122-1. Thus, the bend portion of the third connection electrode 122-3 may not be provided with the reinforcement pattern 122c1.

[0203] At the same time, reference Figure 6 In this embodiment, the connection electrode 122 may include a reinforcement pattern 122c1. The reinforcement pattern 122c1 may be a protruding portion provided in the bent portion 122c of the connection electrode 122. Hereinafter, the reinforcement pattern 122c1 is described as a protruding portion.

[0204] The first side surface 122cs1 of the bent portion 122c of the connection electrode 122 may include a protruding portion 122c1 protruding or convex toward the outside. Thus, the first side surfaces of the first portion 122a, the second portion 122b, and the bent portion 122c of the connection electrode 122 may have a step based on the protruding portion 122c1.

[0205] The second side surface 122cs2 of the bent portion 122c of the connecting electrode 122 may include a concave portion 122c2 that is concave inward. For example, in the region where the concave portion 122c2 of the connecting electrode 122 is located, the width of the connecting electrode 122 can be reduced, thereby effectively improving the impedance of the connecting electrode 122 and thus improving the overall electrical characteristics of the connecting electrode 122.

[0206] For example, the concave portion 122 c 2 can minimize a difference in the width of each portion of the connection electrode 122 , thereby improving electrical characteristics.

[0207] For example, the concave portion 122c2 can minimize the difference in horizontal width between the first portion 122a and / or the second portion 122b and the bent portion 122c of the connection electrode 122. Thus, this embodiment can minimize signal transmission loss that may be generated due to the width difference between the first portion 122a and / or the second portion 122b and the bent portion 122c, thereby enabling the semiconductor device to operate smoothly.

[0208] Furthermore, recessed portion 122c2 can control the impedance characteristics altered by protruding portion 122c1 provided in bent portion 122c of connecting electrode 122. For example, the impedance state formed by connecting electrode 122 can change depending on the protruding length or the protruding length of protruding portion 122c1. Therefore, this embodiment provides recessed portion 122c2 on the side surface opposite to protruding portion 122c1 of bent portion 122c. Thus, this embodiment can minimize changes in impedance characteristics and further improve the ease of impedance control.

[0209] In addition, the concave portion 122c2 can be used together with the convex portion 122c1 to increase the contact area between the insulating layer 110 and the connection electrode 122. Therefore, the present embodiment can further enhance the bonding force between the connection electrode 122 and the insulating layer 110.

[0210] At the same time, reference Figure 7 , the concave portion 122c2 may be provided on the first portion 122a and / or the second portion 122b of the connection electrode 122, rather than on the bent portion 122c.

[0211] In one embodiment, the concave portion 122c2 may be provided on the first portion 122a of the connecting electrode 122. In another embodiment, the concave portion 122c2 may be provided on the first portion 122a of the connecting electrode 122 adjacent to the bent portion 122c. In another embodiment, the concave portion 122c2 may be provided on each of the first portion 122a and the second portion 122b of the connecting electrode 122.

[0212] In this case, the concave portion 122c2 may be provided on a side surface of the first portion 122a of the connection electrode 122 that is opposite to the side surface of the convex portion 122c1 on which the bent portion 122c is provided. For example, the convex portion 122c1 may be provided on the first side surface 122c1 of the bent portion 122c. In this case, the concave portion 122c2 may be provided on the second side surface of the first portion 122a.

[0213] For example, the concave portion 122c2 may be provided on the second portion 122b of the connecting electrode 122, adjacent to the bent portion 122c. In this case, the concave portion 122c2 may be provided on a side surface of the second portion 122b of the connecting electrode 122, opposite to the side surface of the convex portion 122c1 on which the bent portion 122c2 is provided. For example, the convex portion 122c1 may be provided on the first side surface 122c1 of the bent portion 122c. In this case, the concave portion 122c2 may be provided on the second side surface of the second portion 122b.

[0214] Thus, this embodiment can improve the impedance matching characteristics of the circuit board and the semiconductor package. In addition, this embodiment can reduce the change in electrical characteristics caused by the protrusion 122c1 by using the concave portion 122c2. In addition, this embodiment can use the concave portion 122c2 to enhance the bonding strength with the insulating layer 110.

[0215] At the same time, reference Figure 8 , the protruding portion 122 c 1 may be provided on different side surfaces of each electrode line of the connection electrode 122 .

[0216] For example, the connection electrode 122 may include three electrode lines arranged between the first pad and the second pad of the pad electrode 121. For example, the connection electrode 122 may include a first electrode line 122L1 adjacent to the first pad. For example, the connection electrode 122 may include a second electrode line 122L2 adjacent to the second pad. For example, the connection electrode 122 may include a third electrode line 122L3 arranged between the first electrode line 122L1 and the second electrode line 122L2.

[0217] Each of the first electrode line 122L1 and the second electrode line 122L2 may have a convex portion.

[0218] In this case, the first electrode line 122L1 may include a first side surface facing the side surface of the adjacent pad electrode 121, and a second side surface opposite to the first side surface and facing the side surface of the adjacent electrode line (e.g., the third electrode line 122L3). The protruding portion of the first electrode line 122L1 may be provided on the first side surface facing the side surface of the pad electrode 121. In addition, the protruding portion provided in the third electrode line 122L3 may be provided on the side surface facing the pad electrode 121.

[0219] Therefore, when each of the adjacent electrode lines is provided with a protruding portion, this embodiment can solve the circuit short circuit problem caused by the reduction of the interval between the adjacent electrode lines due to the protruding portion.

[0220] At the same time, reference Figure 9 , the connection electrode 122 of the electrode portion 120 of this embodiment may further include a connection portion 122 d connected to the pad electrode 121 .

[0221] The connection portion 122 d of the connection electrode 122 may refer to a portion that makes contact with the pad electrode 121 among the entire region of the connection electrode 122 .

[0222] The connection portion 122d may be connected to the pad electrode 121. The connection portion 122d may be connected between the pad electrode 121 and the first portion 122a and / or the second portion 122b of the connection electrode 122.

[0223] The connection portion 122d may include a region where its width varies. For example, one end of the connection portion 122d may contact the pad electrode 121. Furthermore, the horizontal width of one end of the connection portion 122d may be smaller than the horizontal width W1 of the pad electrode 121 and larger than the width of at least one of the first portion 122a, the second portion 122b, and the bent portion 122c of the connection electrode 122.

[0224] In addition, the connection portion 122 d may include a region whose width gradually decreases as the connection portion 122 d moves from the pad electrode 121 toward the first portion 122 a , the second portion 122 b , and the bent portion 122 c of the connection electrode 122 .

[0225] That is, in this embodiment, the entire area of ​​the connection electrode 122 may not have the width W2 or W3 as described above, but may have the connection portion 122 d so that the width gradually decreases.

[0226] Thus, the present embodiment can improve communication characteristics by minimizing signal transmission loss that occurs as the width between the pad electrode 121 and the connection electrode 122 is rapidly reduced.

[0227] At the same time, reference Figure 10 , the pad electrode 121 of the present embodiment may have a planar shape that is deformed into a shape other than an elliptical shape.

[0228] For example, the pad electrode 121 may include a bent portion 121 - 1 , a first straight portion 121 - 2 , and a second straight portion 121 - 3 based on the circumference of the upper surface.

[0229] For example, the pad electrode 121 may include a bent portion 121 - 1 having a specific radius of curvature. The radius of curvature of the bent portion 121 - 1 of the pad electrode 121 may be determined based on a width W1 of the pad electrode 121 in the horizontal direction.

[0230] The pad electrode 121 may include a first straight portion 121-2 connected to the curved portion 121-1. The first straight portion 121-2 may be connected to both ends of the curved portion 121-1. Therefore, the first straight portion 121-2 may include a first line connected to one end of the curved portion 121-1 and a second line connected to the other end of the curved portion 121-1.

[0231] At this time, when the pad electrode 121 has an elliptical shape, a second curved portion having a curvature radius corresponding to the first straight portion may be disposed at ends of the first and second lines of the first straight portion 121 - 2 .

[0232] Alternatively, an embodiment may include a second straight portion 121-3 bent from ends of the first and second lines of the first straight portion 121-2. The second straight portion 121-3 may extend in a direction different from a direction in which the first straight portion 121-2 extends.

[0233] For example, the second straight line portion 121 - 3 may be bent from the first straight line portion 121 - 2 in a direction corresponding to the connection electrode 122 adjacent thereto.

[0234] For example, the second straight portion 121-3 can be bent from the first straight portion 121-2 in a direction corresponding to the bending direction of the bent portion 122c of the connection electrode 122. Thus, since this embodiment includes the second straight portion 121-3, the spacing between the bent portion 122c of the connection electrode 122 adjacent to the second straight portion 121-3 and the pad electrode 121 can be increased. Therefore, even if the bent portion 122c is provided with the protruding portion 122c1, this embodiment can resolve the short circuit problem that causes the connection electrode 122 and the pad electrode 121 to be electrically connected to each other due to the protruding portion 122c1.

[0235] The circuit board and semiconductor package including the circuit board of this embodiment include an electrode portion. In this case, the upper surface of the electrode portion includes a first portion, a second portion, and a bent portion. The first portion extends along a first horizontal direction, the second portion extends along a second horizontal direction at a predetermined angle to the first horizontal direction, and the bent portion is disposed between the first portion and the second portion. In this case, the bent portion includes a reinforcement pattern. The reinforcement pattern can increase the width of the bent portion of the electrode portion.

[0236] The reinforcement pattern is provided with a protruding shape toward the adjacent pad. Therefore, this embodiment can provide a reinforcement pattern with a protruding shape, thereby reducing the current concentration phenomenon in the bent portion. Therefore, this embodiment can maintain a more uniform current distribution in the electrode portion. Furthermore, when the protruding shape of the reinforcement pattern has a curvature, it is easier to form the pattern during the exposure process used to form the reinforcement pattern, thereby improving product yield.

[0237] Furthermore, this embodiment can provide a reinforcement pattern at the bent portion, thereby increasing the rigidity of the fragile bent portion of the electrode. Consequently, this embodiment can address the problem of electrical open circuits or cracks occurring in the bent portion of the electrode, thereby improving the electrical and / or physical reliability of the semiconductor package. Furthermore, this embodiment can ensure smooth operation of the semiconductor device incorporated into the semiconductor package, thereby improving the operational reliability of electronic products (e.g., servers) incorporating the semiconductor package.

[0238] Furthermore, the electrode portion of this embodiment may include a bent portion, thereby increasing the integration of the electrode portion and shortening the electrical length of the electrode portion. Therefore, this embodiment can reduce parasitic capacitance, parasitic inductance, and parasitic resistance of the electrode portion, thereby effectively improving the overall impedance of the electrode portion and further miniaturizing the area of ​​the semiconductor package.

[0239] In addition, the electrode portion of the present embodiment has a first side surface and a second side surface. In addition, the first side surface of the electrode portion may be provided with a convex portion of a reinforcement pattern, and the second side surface may be provided with a concave portion. The concave portion may be provided concavely from the second side surface of the electrode portion toward the first side surface. The concave portion may alleviate the electrical characteristics of the electrode portion that are changed due to the convex portion. Thus, the present embodiment can further improve the electrical reliability of the electrode portion. For example, the electrode portion of the present embodiment may have a reduced width in the area including the concave portion. Thus, the present embodiment can effectively improve the impedance of the electrode portion, and thus, can be used to improve the overall electrical characteristics of the electrode portion.

[0240] In addition, the electrode portion of the present embodiment can be provided with a concave portion and a convex portion, thereby increasing the contact area between the insulating layer and the electrode portion. Thus, the present embodiment can improve the adhesion between the electrode portion and the insulating layer, and can solve the problem of the electrode portion peeling off from the insulating layer. For example, the concave portion and / or the convex portion of the electrode portion can overlap with the insulating layer in the vertical direction and / or the horizontal direction, thereby enhancing the bonding strength in the vertical direction and / or the bonding strength in the horizontal direction between the electrode portion and the insulating layer. In addition, when each layer of the insulating layer is formed by a different insulating material, due to the different thermal expansion coefficients between different materials, peeling in the vertical direction and / or the horizontal direction may occur. Therefore, the present embodiment can improve the electrical reliability of the electrode portion by using the concave portion and the convex portion, while improving the mechanical reliability by increasing the contact area with the insulating layer.

[0241] On the other hand, when the circuit board with the above characteristics of the present invention is used in IT equipment or household appliances such as smart phones, server computers, TVs, etc., it can stably perform functions such as signal transmission or power supply. For example, when the circuit board with the characteristics of the present invention performs the function of semiconductor packaging, the circuit board can be used to safely protect the semiconductor chip from external moisture or pollutants, or alternatively, it can solve the problems of leakage current, electrical short circuit between terminals, and electrical open circuit of terminals that supply power to the semiconductor chip. In addition, when assuming the function of signal transmission, the noise problem can be solved. Thus, the circuit board with the above characteristics of the present invention can maintain the stable function of IT equipment or household appliances, so that the entire product and the circuit board to which the present invention is applied can achieve functional unification or technical linkage with each other.

[0242] When a circuit board having the aforementioned characteristics of the present invention is used in transportation equipment such as a vehicle, it can resolve distortion issues in signals transmitted to the transportation equipment. Alternatively, the safety of the transportation equipment can be further improved by externally securing the semiconductor chip controlling the transportation equipment and resolving issues such as leakage current, electrical shorts between terminals, or electrical opens in terminals supplying power to the semiconductor chip. Consequently, the transportation equipment and the circuit board incorporating the present invention can achieve functional integrity or technical linkage with each other.

[0243] The characteristics, structures, and effects described in the above embodiments are included in at least one embodiment, but are not limited to one embodiment. In addition, the characteristics, structures, and effects shown in each embodiment can be combined or modified with respect to other embodiments by a person skilled in the art to which the embodiment belongs. Therefore, it should be understood that the contents related to such combinations and such modifications are included in the scope of the embodiments.

[0244] The above description has focused on the embodiments, but it is illustrative only and does not limit the embodiments. Those skilled in the art will appreciate that various modifications and applications not shown above are possible without departing from the essential features of the embodiments. For example, each component specifically shown in the embodiments can be modified and implemented. Furthermore, it should be understood that differences related to such changes and applications are included within the scope of the embodiments defined in the appended claims.

Claims

1. A circuit board, comprising: Insulation layer; and an electrode portion, the electrode portion being arranged on the insulating layer, The upper surface of the electrode portion includes a first portion, a second portion, and a bent portion, the first portion extending along a first direction parallel to the upper surface of the insulating layer, the second portion extending along a second direction parallel to the upper surface of the insulating layer and having a predetermined inclination angle with the first direction, and the bent portion is provided between the first portion and the second portion, and The bent portion further includes a reinforcement pattern in a region where an extension line of the first portion and an extension line of the second portion form an obtuse angle.

2. The circuit board according to claim 1, wherein The electrode portion has a step in which a width thereof changes in the bent portion between the first portion and the second portion.

3. The circuit board according to claim 1, wherein A width of the bent portion including the reinforcement pattern is greater than a width of at least one of the first portion and the second portion.

4. The circuit board according to claim 1, wherein The electrode portion has a width in a range of 2 μm to 8 μm.

5. The circuit board according to claim 1, further comprising: A pad portion is disposed on the insulating layer and connected to the electrode portion.

6. The circuit board according to claim 5, wherein The bent portion includes a first side surface facing the outer surface of the pad portion and a second side surface opposite to the first side surface, and Wherein, the reinforcement pattern is provided on the first side surface of the bent portion.

7. The circuit board according to claim 6, wherein: The reinforcement pattern is a protruding portion protruding from the first side surface of the bent portion toward the pad portion.

8. The circuit board according to claim 7, wherein: The bent portion further includes a first concave portion that is provided on the second side surface and is concave toward the first side surface.

9. The circuit board according to claim 1, wherein At least one side surface of the first portion and the second portion of the electrode part is provided with a second concave portion concave toward an inner side of the electrode part.

10. The circuit board according to claim 1, wherein The electrode portion includes a first group of electrode portions and a second group of electrode portions, the first group of electrode portions includes a plurality of electrode patterns spaced apart from each other at a first interval, and the second group of electrode portions includes a plurality of electrode patterns spaced apart from each other at a second interval larger than the first interval. Wherein, the bending portion of the first group of electrode parts is provided with the reinforcement pattern, and Wherein, the bending portion of the second group of electrode parts is not provided with the reinforcement pattern.

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