Preparation method of high-entropy soft magnetic film with high resistivity and high cutoff frequency and the film

Abstract

The application belongs to the field of soft magnetic high-entropy alloy materials and magnetron sputtering technology, and particularly relates to a high-entropy soft magnetic film preparation method and film with high resistivity and cutoff frequency, which comprises the following steps: preparing a high-entropy alloy target and a zinc oxide target; selecting a non-magnetic material with high resistivity as a substrate; after cleaning the target and the substrate, performing double-target-position film magnetron sputtering on the target and the substrate by using the high-entropy alloy target and the zinc oxide target; the sample table is provided with multiple substrates, and the high-entropy soft magnetic alloy target and the ZnO target are arranged below; and the high-entropy soft magnetic film and the ZnO composition gradient-induced soft magnetic film are sputtered on the surface of the substrate. The application adopts composition gradient sputtering ZnO to control the film performance, further improves the resistivity, and obtains the high-entropy soft magnetic film with higher cutoff frequency under the action of strong inverse magnetic electric coupling and the large stress-induced Hk.

Description

Technical Field

[0001] The present invention belongs to the technical field of soft magnetic high entropy alloy materials and magnetron sputtering, and in particular relates to a method for preparing a high entropy soft magnetic film with high resistivity and cutoff frequency, and the film. Background Art

[0002] With the rapid development of wireless communications and high-frequency technology in the GHz range, soft magnetic film materials have been widely studied and applied in various fields such as high-frequency inductance, electromagnetic compatibility, electromagnetic interference and microwave absorption. The development of thin film materials with good soft magnetic properties and high-frequency characteristics in the GHz band will accelerate the development of large-scale integrated electronic components towards miniaturization and high frequency. The most suitable magnetic film compatible with semiconductor processes is metal magnetic film, such as traditional FeCo, FeNi, FeSi, FeAl soft magnetic films, etc. Metal soft magnetic films have the characteristics of high saturation magnetization and high initial permeability, but their resistivity is low (10 -7 ~10 -6 Ω.m), high-frequency eddy current losses are large, making it prone to failure at high frequencies. Therefore, the preparation of soft magnetic metal films with both high cutoff frequency and high resistivity is crucial to promoting the miniaturization and high-frequency development of integrated circuits.

[0003] The cutoff frequency fr determines the material's operating frequency. According to the Kittle equation, the cutoff frequency is related to the material's saturation magnetization Ms and anisotropy field Hk. Therefore, when the material's saturation magnetization is constant, adjusting the film's anisotropy field is an effective method for increasing the cutoff frequency. Common methods include increasing in-plane anisotropy by introducing compositional induction, magnetic field induction, tilted sputtering induction, multilayer film structure induction, and shape induction during the thin film sputtering process.

[0004] For the research of high cut-off frequency and high resistivity soft magnetic films, CN116397193A discloses a method for preparing high resistivity and high cut-off frequency soft magnetic films, by combining a high resistivity SiO2 target with Fe 40 Co 40 B 20 The target material is co-sputtered, and the resistivity of the film is controlled by adjusting the sputtering power of the SiO2 target. At the same time, the tilt angle is introduced to control the anisotropy field in the film plane, thereby improving the cutoff frequency of the film. However, the introduction of the non-magnetic phase SiO2 causes the saturation magnetization intensity 4πMs (Gs) of the material to decrease from 19235 to 12330. CN110607503B discloses a soft magnetic composite film for high-frequency magnetic cores and a preparation method thereof, in which a multilayer [(Ni 100+x Fe x ) 100-y (SiO2) y / SiO2] n Soft magnetic films achieve a cutoff frequency of over 1 GHz, but their saturation magnetization and permeability remain low. CN116564646A discloses a high-resonance-frequency, high-permeability soft magnetic film and its preparation method. By providing a substrate and a diamond-shaped soft magnetic patterned layer on the substrate surface, the diamond-shaped soft magnetic patterned layers are arranged orthogonally. This preparation method separates the soft magnetic layers at different locations, increasing the resistivity of the film as a whole and offering the advantage of high application frequencies. However, this split structure increases the difficulty of preparation, complicates the process, and compromises the film's other soft magnetic properties.

[0005] Based on the research published above, it's difficult to simultaneously increase the resonant frequency of a film while maintaining other favorable soft magnetic properties, which limits its application in high-frequency applications. Furthermore, multilayer and patterned films increase process complexity, influencing more parameters and making subsequent device fabrication and processing more challenging. Summary of the Invention

[0006] The present invention aims to overcome the shortcomings of the prior art and thereby provide a method for preparing a high-entropy soft magnetic film with high resistivity and high cutoff frequency. The present invention first designs a high-entropy soft magnetic alloy target material composition, and utilizes the high-entropy effect, lattice distortion effect, slow diffusion effect, and cocktail effect of the high-entropy alloy to increase the scattering of metal conductive phonons, thereby increasing the resistivity of the material and weakening the deterioration of magnetic properties caused by the introduction of non-magnetic phases. At the same time, the material itself has excellent magnetic properties. Secondly, the soft magnetic target material and ZnO target material are co-sputtered to introduce a composition-gradient doped ZnO film, which not only increases the resistivity of the material but also, under the action of strong reverse magnetoelectric coupling and large stress-induced Hk, obtains a high-entropy soft magnetic film with high cutoff frequency and high resistivity.

[0007] The complete technical solution of the present invention includes:

[0008] The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency comprises the following steps:

[0009] Step (1): preparing a high entropy alloy target and a zinc oxide target;

[0010] Step (2): Select a non-magnetic material with high resistivity as the substrate;

[0011] Step (3): Cleaning the target and substrate;

[0012] Step (4): dual-target thin film magnetron sputtering is performed using a high entropy alloy target and a zinc oxide target. Multiple substrates are installed on a sample stage, and a high entropy alloy target and a zinc oxide target are set below the sample stage. Each target uses an independent target gun to sputter a high entropy alloy and zinc oxide composition gradient-induced soft magnetic film on the surface of the substrate; during the magnetron sputtering process, the sputtering power of the zinc oxide target changes in a step-by-step manner.

[0013] Furthermore, the sputtering power of the high entropy alloy target is 300W~400W; the starting sputtering power W1 of the ZnO target is 60~100W, and the ending sputtering power W2 is 300~360W.

[0014] Furthermore, during the step-wise change of the ZnO target sputtering power, the power change value at each stage is defined as the power gradient , which ranges from 20W to 60W.

[0015] Furthermore, during the step-wise change of the ZnO target sputtering power, the corresponding sputtering time at each power is min, and satisfy: , is the total sputtering time.

[0016] Furthermore, in step (1), the high entropy alloy target is an M-Fe-Co-Ni alloy target, M is Zr and / or B, and the target composition content is determined by a high-throughput screening composition design method. After the target is prepared, it is heat treated.

[0017] Furthermore, in step (2), the resistivity of the substrate is greater than 1000Ω.cm.

[0018] Furthermore, in step (3), the substrate is cleaned by ultrasonic cleaning with acetone, deionized water, and anhydrous ethanol for 10 minutes in sequence, and then blown dry under N2 gas flow; the high entropy alloy target and the high-purity ZnO target are cleaned by deionized water and anhydrous ethanol in sequence, and then blown dry under N2 gas flow.

[0019] Furthermore, in step (4), the sample stage is rotated by the rotating shaft during magnetron sputtering.

[0020] Furthermore, in step (4), the sputtering temperature is room temperature, the working gas is argon, and the vacuum degree is 3.0~4.0×10 - 4 Pa.

[0021] Furthermore, a high entropy soft magnetic film with high resistivity and cutoff frequency is prepared using the method.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] (1) The method for regulating the performance of the component gradient sputtered ZnO film can not only refer to the traditional method for regulating the uniaxial anisotropy field, but also utilize the strong magnetoelectric coupling effect between the ferromagnetic / ferroelectric interface of the high-entropy alloy-ZnO film to increase the cutoff frequency. The strong magnetoelectric coupling effect is a novel non-magnetic field regulating method. In addition, this method increases the resistivity of the film, so that the high-frequency loss is reduced while the cutoff frequency is improved. The high-entropy alloy composition obtained has good soft magnetic performance and high resistivity, which is beneficial to reduce the high-frequency eddy current loss. Meanwhile, the component gradient doped ZnO film is provided, which further improves the resistivity and obtains the high-entropy soft magnetic film with higher cutoff frequency under the action of strong inverse magnetoelectric coupling and large stress-induced Hk.

[0024] (2) The component gradient sputtering process has high controllability: the high-entropy alloy / ZnO gradient film is prepared by changing the relative sputtering power of the two targets over time through double-target sputtering. By regulating the sputtering power at different times, the ZnO component gradient can be more accurately adjusted to obtain a soft magnetic film with good comprehensive performance.

[0025] (3) The process has strong compatibility and can be compatible with other Hk regulating processes: it can be combined with other Hk regulating processes such as external magnetic field sputtering, inclined sputtering, electric field regulation induction, shape induction, etc. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a schematic diagram of the double-target magnetron sputtering of the application.

[0027] Figure 2 It is a SEM image of the soft magnetic film of the application.

[0028] Figure 3 It is an EDS image of the soft magnetic film of the application.

[0029] In the figure, 1 is a sample stage, 2 is a sample, 3 is a high-entropy soft magnetic alloy target material, 4 is a ZnO target material, and 5 is a rotating shaft. DETAILED DESCRIPTION

[0030] The application will be described in detail below in conjunction with the embodiments and the drawings, but it should be understood that the embodiments and the drawings are only used to exemplarily describe the application and cannot constitute any limitation on the protection scope of the application. All reasonable modifications and combinations within the scope of the inventive concept of the application fall within the protection scope of the application.

[0031] The present invention provides a method for preparing high-entropy soft magnetic and ZnO composition gradient-induced soft magnetic films. By co-sputtering a soft magnetic target and a ZnO target, a composition-gradient-doped ZnO film is introduced. This method not only improves the resistivity of the material but also, under the influence of strong reverse magnetoelectric coupling and a large stress-induced Hk, produces a high-entropy soft magnetic film with a high cutoff frequency and high resistivity. Conventional magnetic field sputtering and magnetic field annealing treatments produce films with too low anisotropy field Hk. This preparation method is simple and highly compatible with other Hk-control processes. The preparation process is easy to control, facilitating industrialization and promotion.

[0032] In order to achieve the above object, the present invention adopts the following technical solutions:

[0033] A method for preparing a high-entropy soft magnetic and ZnO composition gradient-induced soft magnetic film. The preparation steps of the invention include:

[0034] (1) Target preparation: Metal M, Fe, Co, and Ni powders are processed to obtain high entropy alloy targets, where M is Zr and / or B. The target is prepared by vacuum induction melting. Preferably, the purity of all metal blocks used for melting is not less than 99.99%. ZnO powder with a purity of 99.99% is used, ball milled, spray granulated, and cold isostatically pressed. After debonding and sintering, a blank is formed, which is then finely processed to prepare the ZnO target.

[0035] Among them, the composition of the high-entropy alloy target material is the optimized composition determined by the high-throughput screening composition design method. After the target material is prepared, it is heat treated. The high-throughput screening method adopted in the present invention is further described, which includes the following steps.

[0036] (1.1) Multi-component gradient thin film sputtering: Using the magnetron sputtering process, the chamber atmosphere conditions are controlled, and the various component elements of the high entropy alloy target are deposited on the surface of each substrate through magnetron sputtering to obtain multiple thin film samples with different component contents. Specifically including:

[0037] First, the preset range of the content of each component element determined by the present invention is:

[0038] 1) Zr: 10.5~14.2 at%, Fe: 21.7~50.5 at%, Co: 16.4~53.4 at%, Ni: 12.3~22.1at%; or

[0039] 2) B: 7.5~12.1 at%, Fe: 20.3~54.5 at%, Co: 13.5~58.5 at%, Ni: 11.2~22.5 at%; or

[0040] 3) B: 4.6~8.8 at%, Zr: 2.7~6.5 at%, Fe: 20.3~54.5 at%, Co: 13.5~58.5 at%, Ni: 11.2~22.5 at%.

[0041] During this process, in order to ensure that the component content of the thin film samples is within a preset range and that the content of each component in each sample varies as evenly as possible to facilitate subsequent high-throughput screening, the different atomic binding forces of each target during sputtering lead to different atomic detachment rates. This paper analyzes the spatial distribution pattern of the atoms of each target after detachment (with increasing distance from the target, the concentration of target element atoms in space gradually decreases). The analysis identifies the main influencing factors (the total number of samples, the horizontal spacing and the vertical spacing of each sample), and selects the following experimental method:

[0042] High-purity Fe, high-purity Co, high-purity Ni, and high-purity M targets are used and evenly placed at four positions in the chamber. The M target can be a Zr target, a B target, or a Zr / B mixed target. The angles of the four target positions are adjusted so that they are at a 45° angle to the horizontal. The sample holder is placed in the middle of the four targets, and multiple high-resistivity non-magnetic material substrates are placed on the sample holder.

[0043] First, we select the same sample with a fixed sputtering time t0 and a fixed distance d0 from the target. We then measure the deposition thickness of each target element on the sample surface at different sputtering powers to characterize the desorption rate of each target element at different sputtering powers. Then, using Fe as a benchmark, we determine the baseline sputtering power (250W) for the Fe target and obtain the desorption rate of Fe at this power. Then, we select the corresponding power for other components so that their desorption rates at the corresponding sputtering powers meet the following equation:

[0044]

[0045] Where: For ingredients The desorption rate at the selected corresponding power is, is the desorption rate of Fe component at the reference sputtering power, For ingredients The minimum atomic percentage content within the preset content range, For ingredients The maximum atomic percentage content within the preset range, is the minimum atomic percentage content of Fe within the preset range, It is the maximum atomic percentage content of Fe within the preset range.

[0046] When M is a Zr target or a B target, the maximum and minimum atomic percentages of the M component are the maximum and minimum atomic percentages of the Zr and B elements, respectively. When M is a Zr / B mixed target, the maximum atomic percentage of the M component is the sum of the maximum atomic percentages of the Zr and B elements, and the minimum atomic percentage of the M component is the sum of the minimum atomic percentages of the Zr and B elements.

[0047] The sample placement parameters (horizontal spacing, vertical spacing, and number) were then determined. Fe and M targets were selected, and the deposition rates (the ratio of deposition thickness on the substrate surface to deposition time) of the closest sample and the furthest sample were measured under different sample spacing (horizontal spacing, vertical spacing) and sample numbers. The attenuation of these rates was statistically analyzed, and multiple linear regression was used to determine the relationship between the attenuation and the horizontal and vertical spacing, and number of samples. When M was a Zr target and a B target, the deposition rates of the Zr and B elements were calculated and analyzed separately. When it was a Zr / B mixed target, the total deposition rate of the two elements was calculated and analyzed.

[0048] According to the obtained relationship, the corresponding sample spacing and number are selected so that:

[0049]

[0050]

[0051] Where, is the maximum value of the atomic percentage ratio of Fe component to M component within the preset range, This is the maximum atomic percentage ratio of the M component to the Fe component within a preset range during high-throughput testing. Similarly, when M is a Zr target or a B target, the maximum and minimum atomic percentages of the M component are the maximum and minimum atomic percentages of the Zr and B elements, respectively. When it is a Zr / B mixed target, the maximum atomic percentage of the M component is the sum of the maximum atomic percentages of the Zr and B elements, and the minimum atomic percentage of the M component is the sum of the minimum atomic percentages of the Zr and B elements. is the deposition rate of Fe atoms on the sample closest to the Fe target, is the deposition rate of Fe atoms on the sample farthest from the Fe target; is the deposition rate of M atoms on the sample closest to the M target, is the deposition rate of M atoms on the sample farthest from the M target.

[0052] The parameters finally selected are: horizontal spacing 2.5cm, vertical spacing 1.3cm, and number 60.

[0053] (1.2) Sample testing and target material composition design: Multiple thin film samples are tested, and the content of the constituent elements of the high-entropy alloy target is screened based on the saturation magnetization, coercive force, and resistivity performance requirements.

[0054] After the target material is prepared, it is processed and then heat treated. In terms of target material processing and heat treatment technology, a response surface model is constructed for experimental design, and the optimized parameter combination is obtained based on the experimental results. The selected controllable variables include: cutting thickness, with a value range of 10~20mm; target material diameter X2, with a value range of 100~150mm; number of heat treatments X3, with a value range of 1~3 times; heat treatment temperature X4, with a value range of 700~1000℃; heat treatment time X5, with a value range of 1~15 hours.

[0055] The degree of deviation of the component content Y is selected as the response variable. Factor level coding is performed, and actual experimental parameters are constructed according to the coded values ​​of each designed experiment. Designs that do not meet actual requirements are removed, and a central composite experimental design is performed. Multiple groups of experiments are conducted, and the degree of deviation of the component content Y of each group of experiments is measured and calculated. A second-order polynomial regression model based on the degree of deviation of the component content and controllable variables is established. The coefficient estimate of the regression model is obtained by fitting using the least squares method. The predicted degree of deviation of the component content Y obtained by the regression model is used as the objective function, and the goal is to minimize Y. The initial solution is set and iterative optimization is performed. When the set maximum number of iterations is reached, the current solution at this time is the optimized parameter combination. Specifically, the target material processing size is 142mm, the thickness is preferably 16mm, and a two-stage heat treatment process is adopted, wherein the first-stage heat treatment temperature is 820℃, and the heat treatment holding time is 10h; the second-stage heat treatment temperature is 980℃, and the heat treatment holding time is 1.5h.

[0056] (2) Substrate preparation: Select a non-magnetic material with high resistivity as the substrate material; preferably a high resistivity silicon wafer (resistivity > 1000Ω.cm).

[0057] (3) Target and substrate cleaning: Clean the substrate, high entropy alloy target, and high-purity ZnO target; the substrate is cleaned by ultrasonic cleaning with acetone, deionized water, and anhydrous ethanol for 10 minutes in sequence, and then blown dry under N2 flow; the high entropy alloy target and high-purity ZnO target are cleaned by deionized water and anhydrous ethanol in sequence, and then blown dry under N2 flow.

[0058] (4) Thin film sputtering: such as Figure 1As shown, a dual-target magnetron sputtering process is used. Multiple samples 2 are clamped on a sample stage 1. A high-entropy soft magnetic alloy target 3 and a ZnO target 4 are placed below the sample stage. High-entropy soft magnetic and ZnO composition gradient-induced soft magnetic films are sputtered onto the substrate surface. During sputtering, a rotating shaft 5 rotates the sample stage 1. The sputtering temperature is room temperature, and the working gas is 99.99% argon. The vacuum level is 3.0-4.0×10 -4 Pa.

[0059] Preferably, the total sputtering time of the high entropy alloy target and the ZnO target is The deposition time is 40~80min, and the sputtering deposition rate is 0.5~2μm / h.

[0060] Preferably, the sputtering power of the high entropy alloy target is 300W~400W, and the ZnO target adopts DC sputtering. The sputtering power during the sputtering process is adjusted to realize ZnO gradient sputtering. The starting sputtering power W1 is 60~100W, and the ending sputtering power W2 is 300~360W. The power change of the sputtering process is step-by-step. For example, the first stage is sputtered with the starting sputtering power for the first period of time, and then adjusted to the second power for sputtering, and after the second period of time, adjusted to the third power, and so on, until the medium sputtering power. The power change value of each stage in the process is defined as the power gradient , which ranges from 20W to 60W, and the corresponding sputtering time at each power is min, and satisfy: .

[0061] The surface morphology of the high entropy soft magnetic film obtained by the method is as follows Figure 2 The distribution trend of Zn and O content from the surface to the inner layer is shown in Figure 3 As shown, Figure 3 (a) is the cross section of the specimen, Figure 3 (b) is the atomic percentage content of Zn, Figure 3 (c) is the atomic percentage of Zn in O, Figure 3 The white line in (a) is Figure 3 (b) and Figure 3 Corresponding to the horizontal axis in (c), it can be seen that the atomic percentage content of Zn and O elements gradually decreases from the surface of the film to the inside, and the performance is shown in Table 1.

[0062] Table 1 Properties of high entropy soft magnetic films

[0063]

[0064] Example 1

[0065] (1) Target preparation: According to the alloy composition of the high-entropy alloy target, metal powders of Zr, Fe, Co and Ni are selected. Vacuum melting is performed, and in order to ensure the uniformity of the target composition, the high-entropy alloy ingot is obtained by melting four times, and the high-entropy alloy target with a thickness of 2 mm is prepared by wire cutting. The raw powder of 99.99% pure ZnO is mixed, granulated, cold isostatic pressed, degreased and sintered to form a blank, and a diamond wire saw is used for processing to prepare a ZnO sheet with a diameter of 101.6 mm and a thickness of 8 mm. And through copper back plate binding, a sputtering ZnO target is prepared.

[0066] (2) Substrate preparation: The substrate is a high-resistance Si sheet with a size of 10x10 mm and 3x3 mm.

[0067] (3) Cleaning of target and substrate: The substrate is cleaned with acetone, deionized water and anhydrous ethanol in sequence, and ultrasonic cleaning is performed for 10 min, and then dried under N2 flow; the target is cleaned with deionized water and anhydrous ethanol in sequence, and dried under N2 flow.

[0068] (4) Thin film sputtering: The sputtering temperature is room temperature, the working gas is argon, and the working gas is 99.99% argon. The vacuum degree is 3.0~4.0x10 -3 Pa, and the sputtering time is 15~20 min; the high-entropy alloy target is sputtered by direct current, and the sputtering power is 300 W. ZnO is sputtered by direct current, and the sputtering power during sputtering is adjusted to realize gradient sputtering of ZnO. The initial sputtering power is 60 W, and the cut-off sputtering power is 300 W. The total time of the sputtering process is 50 min, and the sputtering power gradient is 30 W, and the sputtering time corresponding to each power is 5.5 min.

[0069] Other embodiments of the present disclosure will be readily apparent to those skilled in the art upon considering the disclosure herein, with the disclosure intended to cover any alternatives, modifications, or equivalents of the methods and compositions as described herein, which are in accordance with the general principles of the present disclosure and include those specifically recited in the claims. The specification and examples are, therefore, to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the claims.

Claims

1. A method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency, characterized in that: The steps include: Step (1): preparing a high entropy alloy target and a zinc oxide target; Step (2): Select a non-magnetic material with high resistivity as the substrate; Step (3): Cleaning the target and substrate; Step (4): dual-target thin film magnetron sputtering is performed using a high entropy alloy target and a zinc oxide target. Multiple substrates are installed on a sample stage, and a high entropy alloy target and a zinc oxide target are set below the sample stage. Each target uses an independent target gun to sputter a high entropy alloy and zinc oxide composition gradient-induced soft magnetic film on the surface of the substrate; during the magnetron sputtering process, the sputtering power of the zinc oxide target changes in a step-by-step manner.

2. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 1, wherein: The sputtering power of high entropy alloy target is 300W~400W; the starting sputtering power W1 of zinc oxide target is 60~100W, and the cut-off sputtering power W2 is 300~360W.

3. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 2, characterized in that: During the step-by-step change of the sputtering power of the zinc oxide target, the power change value at each stage is defined as the power gradient , ranging from 20W to 60W.

4. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 3, characterized in that: During the step-by-step change of the sputtering power of the zinc oxide target, the sputtering time corresponding to each power is min, and satisfy: , is the total sputtering time.

5. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 4, characterized in that: In step (1), the high entropy alloy target is an M-Fe-Co-Ni alloy target, M is Zr and / or B, and the target material composition content is determined by a high-throughput screening composition design method. After the target material is prepared, it is heat treated.

6. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 5, characterized in that: In step (2), the resistivity of the substrate is greater than 1000Ω.cm.

7. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 6, characterized in that: In step (3), the substrate is cleaned by ultrasonic cleaning with acetone, deionized water, and anhydrous ethanol for 10 minutes in sequence, and then blown dry under N2 gas flow; the high entropy alloy target and zinc oxide target are cleaned by deionized water and anhydrous ethanol in sequence, and then blown dry under N2 gas flow.

8. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 7, characterized in that: In step (4), the sample stage is rotated by the rotating shaft during magnetron sputtering.

9. The method for preparing a high-entropy soft magnetic film with high resistivity and cutoff frequency according to claim 8, characterized in that: In step (4), the sputtering temperature is room temperature, the working gas is argon, and the vacuum degree is 3.0~4.0×10 -4 Pa.

10. A high entropy soft magnetic film with high resistivity and cutoff frequency prepared by the method according to claim 9.

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