Crystalline silicon perovskite laminated cell and preparation method thereof

Abstract

The invention relates to the field of solar photovoltaics, and provides a crystalline silicon perovskite laminated cell and a preparation method thereof. A first negative electrode and a second positive electrode are prepared on a P surface of a crystalline silicon cell substrate, a metal grid line is prepared on one side, deviating from a functional layer, of a transparent conductive electrode in a laminated cell, the transparent conductive electrode and the metal grid line form the first positive electrode, and a second negative electrode is prepared in a peripheral area of the first positive electrode; in the working process of the crystalline silicon perovskite laminated cell, the first positive electrode and the first negative electrode are used as electrodes of the laminated cell; when the laminated cell fails, the crystalline silicon perovskite laminated cell is turned over, and the second positive electrode and the second negative electrode are used as electrodes of the crystalline silicon cell, so that normal use of the crystalline silicon cell is ensured, the power generation efficiency of the laminated cell is effectively improved, the overall service life of the laminated cell is prolonged, and the resource utilization rate and the economic benefit are improved.

Description

Technical Field

[0001] The present invention relates to the field of solar photovoltaics, and in particular to a crystalline silicon perovskite stacked cell and a preparation method thereof. Background Art

[0002] At present, the design of stacked solar cells mainly includes a two-terminal cell structure and a four-terminal cell structure. Among them, the preparation process of the two-terminal cell structure is relatively simple, and the top cell and the bottom cell are connected in series through a shared intermediate composite layer. However, under the current packaging materials and processes, it is impossible to guarantee that the top perovskite cell and the bottom crystalline silicon cell have the same service life. Due to the independence of its top cell and bottom cell, the four-terminal cell gives the cell greater design freedom and modular design potential. However, the four-terminal cell involves a complex combination of multiple electrodes and cell layers, making its manufacturing process more cumbersome and more expensive. In addition, after the independently prepared top cell is superimposed on the bottom cell, the overall volume and weight of the battery will increase, which to a certain extent limits the widespread promotion of the four-terminal battery in weight-sensitive fields. Summary of the Invention

[0003] The present invention provides a method for preparing a crystalline silicon perovskite tandem battery, which is used to solve the problem that the service life of the crystalline silicon in the existing tandem battery does not match the service life of the perovskite battery, and the tandem battery cannot be used after the perovskite battery fails.

[0004] The present invention provides a method for preparing a crystalline silicon perovskite tandem battery, comprising: Prepare a first negative electrode and a second positive electrode on the P surface of the crystalline silicon solar cell substrate; Prepare a composite layer on the N side of the crystalline silicon cell substrate; Prepare a functional layer on the side of the composite layer away from the crystalline silicon cell substrate; Prepare a transparent conductive electrode on the side of the functional layer facing away from the composite layer, and set a pattern on the transparent conductive electrode; A metal grid line is formed on a side of the transparent conductive electrode facing away from the functional layer, wherein the transparent conductive electrode and the metal grid line form a first positive electrode; Cleaning the peripheral region of the first positive electrode, preparing a second negative electrode in the peripheral region of the first positive electrode, and connecting the second negative electrode to the metal grid of the composite layer, thereby obtaining a laminated battery; preparing a protective layer on the outer surface of the stacked battery; The stacked battery provided with the protective layer is encapsulated by an encapsulation layer.

[0005] According to a method for preparing a crystalline silicon perovskite tandem cell provided by the present invention, the step of preparing a composite layer on the N-side of the crystalline silicon cell substrate comprises: Prepare a transparent conductive substrate layer on the N side of the crystalline silicon cell substrate; Prepare a metal grid on the side of the transparent conductive substrate layer facing away from the crystalline silicon cell substrate; A transparent conductive top layer is sputtered on the metal grid, and the transparent conductive base layer, the metal grid and the transparent conductive top layer form the composite layer.

[0006] According to a method for preparing a crystalline silicon perovskite tandem cell provided by the present invention, the step of preparing a functional layer on a side of the composite layer away from the crystalline silicon cell substrate comprises: Spin-coating a first cavity layer on the side of the transparent conductive top layer facing away from the metal grid; Spin-coating a second cavity layer on the side of the first cavity layer facing away from the transparent conductive top layer; A perovskite light absorbing layer is prepared on a side of the second hole layer facing away from the first hole layer; preparing a passivation layer on a side of the perovskite light absorbing layer away from the second hole layer; A first electron transport layer is formed on the side of the passivation layer facing away from the perovskite light absorbing layer; A second electron transport layer is formed on a side of the first electron transport layer facing away from the passivation layer.

[0007] According to a method for preparing a crystalline silicon perovskite tandem cell provided by the present invention, the step of preparing a perovskite light absorbing layer on a side of the second hole layer facing away from the first hole layer comprises: forming a perovskite film on a side of the second cavity layer facing away from the first cavity layer by flash evaporation or anti-solvent method; The perovskite film is subjected to an annealing and crystallization treatment at 80-120° C. for a first predetermined time to form the perovskite light absorbing layer.

[0008] According to a method for preparing a crystalline silicon perovskite tandem cell provided by the present invention, the step of preparing a first cavity layer on a side of the transparent conductive top layer facing away from the metal grid comprises: Spin coating the first cavity layer on the side of the transparent conductive top layer facing away from the metal grid; performing ozone treatment on the first cavity layer for a second predetermined time; The first cavity layer is spin-coated again.

[0009] According to a method for preparing a crystalline silicon perovskite stacked cell provided by the present invention, the thickness of the passivation layer is 1-3 nm.

[0010] According to a method for preparing a crystalline silicon perovskite tandem cell provided by the present invention, the step of preparing a protective layer on the outer surface of the tandem cell comprises: Leading out the first negative electrode, the first positive electrode, the second negative electrode, and the second positive electrode; preparing a first organic protective layer on the outer surface of the stacked battery; preparing an inorganic protective layer on the outer surface of the first organic protective layer; A second organic protective layer is prepared on the outer surface of the organic protective layer.

[0011] According to a method for preparing a crystalline silicon perovskite stacked cell provided by the present invention, the encapsulation layer includes a front adhesive film, a rear adhesive film, a front plate layer, and a rear plate layer. The step of encapsulating the stacked cell provided with the protective layer through the encapsulation layer includes: laminating the stacked battery to form the front glue film on one side of the stacked battery and the back glue film on the other side of the stacked battery, wherein the first negative electrode, the first positive electrode, the second negative electrode, and the second positive electrode are sandwiched between the front glue film and the back glue film; The front plate layer is prepared on the side of the front adhesive film facing away from the laminated battery, and the rear plate layer is prepared on the side of the rear adhesive film facing away from the laminated battery.

[0012] According to a method for preparing a crystalline silicon perovskite stacked cell provided by the present invention, the material of the front plate layer is laminated glass or a composite polymer material, and the material of the rear plate layer is laminated glass or a weather-resistant backplane.

[0013] The present invention also provides a crystalline silicon perovskite tandem cell, which is prepared based on any of the above-mentioned methods for preparing a crystalline silicon perovskite tandem cell, comprising: Crystalline silicon cell substrate; A first negative electrode and a second positive electrode, wherein the first negative electrode and the second positive electrode are arranged on the P surface of the crystalline silicon cell substrate; A composite layer, the composite layer being arranged on the N-side of the crystalline silicon cell substrate; A functional layer, the functional layer being arranged on a side of the composite layer away from the crystalline silicon cell substrate; a transparent conductive electrode, the transparent conductive electrode being disposed on a side of the functional layer facing away from the composite layer, the transparent conductive electrode being provided with a pattern; a metal grid line, the metal grid line being arranged on a side of the transparent conductive electrode facing away from the functional layer, the transparent conductive electrode and the metal grid line forming a first positive electrode; A second negative electrode is disposed in a peripheral region of the first positive electrode, and the second negative electrode is connected to the metal grid of the composite layer; A protective layer, the protective layer being disposed on the outer surface of the stacked battery; The encapsulation layer is arranged on the outer surface of the protective layer.

[0014] The preparation method of the crystalline silicon perovskite tandem battery provided by the present invention comprises the following steps: preparing a first negative electrode and a second positive electrode on the P-side of a crystalline silicon battery substrate; preparing a metal grid line on the side of a transparent conductive electrode facing away from a functional layer in the tandem battery; the transparent conductive electrode and the metal grid line form a first positive electrode; and preparing a second negative electrode in a peripheral area of ​​the first positive electrode; during operation of the tandem battery, the first positive electrode and the first negative electrode serve as electrodes of the tandem battery; when the tandem battery fails, the crystalline silicon perovskite tandem battery is flipped over, and the second positive electrode and the second negative electrode serve as electrodes of the crystalline silicon battery, ensuring that the crystalline silicon battery can be used normally, effectively improving the power generation efficiency of the tandem battery, extending the overall service life of the tandem battery, and improving resource utilization and economic benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the present invention or the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 It is a schematic flow chart of the method for preparing the crystalline silicon perovskite stacked battery provided by the present invention.

[0017] Figure 2 It is a structural schematic diagram of the functional layer provided by the present invention.

[0018] Figure 3 It is a schematic structural diagram of the crystalline silicon perovskite tandem battery provided by the present invention.

[0019] Figure 4 It is a schematic diagram of the cross-sectional structure of the composite layer in the crystalline silicon perovskite tandem battery provided by the present invention.

[0020] Reference numerals: 7. First negative electrode; 8. Second positive electrode; 9. Second negative electrode; 10. Crystalline silicon cell substrate; 11. Composite layer; 12. First hole layer; 13. Second hole layer; 14. Perovskite light absorption layer; 15. Passivation layer; 16. First electron transport layer; 17. Second electron transport layer; 18. Transparent conductive electrode; 19. Metal grid line; 20. Laminated cell; 21. Front film; 22. Back film; 23. Front plate layer; 24. Back plate layer; 25. Metal grid. DETAILED DESCRIPTION

[0021] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0022] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance.

[0023] In the description of the embodiments of the present invention, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in the embodiments of the present invention based on the specific circumstances.

[0024] In the embodiments of the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, a first feature being "above," "above," or "above" a second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. A first feature being "below," "below," or "below" a second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0025] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0026] like Figures 1 to 3 As shown, the preparation method of the crystalline silicon perovskite tandem cell includes: Step S100, preparing a first negative electrode 7 and a second positive electrode 8 on the P surface of the crystalline silicon cell substrate 10; Step S200, preparing a composite layer 11 on the N-side of the crystalline silicon cell substrate 10; Step S300, preparing a functional layer on the side of the composite layer 11 facing away from the crystalline silicon cell substrate 10; Step S400 , preparing a transparent conductive electrode 18 on a side of the functional layer facing away from the composite layer 11 , and setting a pattern on the transparent conductive electrode 18 ; It should be noted that the transparent conductive electrode 18 is prepared by magnetron sputtering or RPD, and a pattern is set on the transparent conductive electrode 18, and the pattern area is the effective area of ​​the stacked battery.

[0027] Step S500 , forming a metal grid line 19 on a side of the transparent conductive electrode 18 facing away from the functional layer, wherein the transparent conductive electrode 18 and the metal grid line 19 form a first positive electrode; The metal grid lines 19 are prepared by printing, evaporation, etc. The purpose of providing the metal grid lines 19 is to reduce the resistance of the transparent conductive electrode 18 .

[0028] Step S600: Clean the peripheral area of ​​the first positive electrode, prepare a second negative electrode 9 on the peripheral area of ​​the first positive electrode, and connect the second negative electrode 9 to the metal grid 25 of the composite layer 11, thereby obtaining a laminated battery 20; Step S700, preparing a protective layer on the outer surface of the laminated battery 20; Step S800 : encapsulating the laminated battery 20 provided with the protective layer through an encapsulation layer.

[0029] like Figure 4As shown, the preparation method of the crystalline silicon perovskite stacked battery provided by the present invention is as follows: a first negative electrode 7 and a second positive electrode 8 are prepared on the P surface of the crystalline silicon battery substrate 10; in the stacked battery, a metal grid line 19 is prepared on the side of the transparent conductive electrode 18 away from the functional layer; the transparent conductive electrode 18 and the metal grid line 19 form a first positive electrode; a second negative electrode 9 is prepared in the peripheral area of ​​the first positive electrode, and the second negative electrode 9 is connected to the metal grid 25 of the composite layer 11; during the operation of the crystalline silicon perovskite stacked battery, the first positive electrode and the first negative electrode 7 serve as electrodes of the stacked battery; when the stacked battery fails, the crystalline silicon perovskite stacked battery is turned over, and the second positive electrode 8 and the second negative electrode 9 serve as electrodes of the crystalline silicon battery, ensuring that the crystalline silicon battery can be used normally, effectively improving the power generation efficiency of the stacked battery 20, extending the overall service life of the stacked battery 20, and improving resource utilization and economic benefits.

[0030] In one embodiment of the present invention, the step of preparing the composite layer 11 on the N-side of the crystalline silicon cell substrate 10 includes: Step S210, preparing a transparent conductive base layer on the N-side of the crystalline silicon cell substrate 10; It should be noted that the primary function of the transparent conductive substrate layer is to provide good electrical conductivity and optical transparency, while also serving as a support layer for the subsequent metal grid and transparent conductive top layer. The transparent conductive substrate layer is made of one or a mixture of two of ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), IZO (indium-doped zinc oxide), GZO (gallium-doped zinc oxide), Ag (silver), Cu (copper), or Au (gold). The transparent conductive substrate layer is prepared using physical vapor deposition (PVD) techniques such as magnetron sputtering or chemical vapor deposition (CVD) to ensure uniformity and strong adhesion of the transparent conductive substrate layer.

[0031] Step S220 , preparing a metal grid on the side of the transparent conductive base layer facing away from the crystalline silicon cell substrate 10 ; It should be noted that the main function of the metal grid is to further reduce the resistance of the transparent conductive substrate while maintaining high optical transparency. Before preparing the metal grid, it is necessary to determine the effective series connection area, and then form the metal grid through laser etching, electroplating or sputtering.

[0032] In step S230 , a transparent conductive top layer is sputtered on the metal grid. The transparent conductive base layer, the metal grid, and the transparent conductive top layer form a composite layer 11 .

[0033] It should be noted here that the main function of the transparent conductive top layer is to protect the metal grid while providing additional conductivity and optical transparency.

[0034] In one embodiment of the present invention, Figure 2As shown, the steps of preparing the functional layer on the side of the composite layer 11 facing away from the crystalline silicon cell substrate 10 include: Spin-coat a first cavity layer 12 on the side of the transparent conductive top layer facing away from the metal grid; It should be noted that the material of the first cavity layer 12 is a mixture of carbazole and aniline. Of course, the material of the first cavity layer 12 is not limited thereto and may be other materials.

[0035] Spin-coat a second cavity layer 13 on the side of the first cavity layer 12 facing away from the transparent conductive top layer; It should be noted that the material of the second cavity layer 13 is a mixture of carbazole and aniline. Of course, the material of the second cavity layer 13 is not limited thereto and may be other materials.

[0036] A perovskite light absorbing layer 14 is formed on the side of the second cavity layer 13 facing away from the first cavity layer 12; Specifically, lead iodide (PbI2), lead bromide (PbBr2), formamidinium iodide (FAI), methylamine bromide (MABr) and cesium iodide (CsI) are weighed in the required proportions, and the above five powders are placed in the same reagent bottle. A mixed solvent of DMF and DMSO is then added with a volume ratio of 4:1 or 3:1. The mixture is then heated to 70°C and stirred to fully dissolve. The solution is then applied to the side of the second cavity layer 13 facing away from the first cavity layer 12 to form a perovskite light absorption layer 14.

[0037] A passivation layer 15 is formed on the side of the perovskite light absorbing layer 14 facing away from the second cavity layer 13; It should be noted that the passivation layer 15 is used to improve the stability and photoelectric performance of the perovskite light absorbing layer 14. The thickness of the passivation layer 15 is 1-3 nm. The passivation layer 15 is prepared by the ALD process. The passivation layer 15 can be an inorganic passivation layer. The material of the inorganic passivation layer is , SiOx or SnOX, the inorganic passivation layer is denser, more evenly dispersed and more stable; of course, the passivation layer 15 can also be an organic passivation layer, and the material of the organic passivation layer is EDAI, EDABr, PEAI, PEABr, PEACl, MAI, MABr, MACl, FAI, FABr, FACl, choline chloride, choline bromide, EAI, PAI, BAI, PMAI, EABr, PABr, BABr, PMABr, EACl, PACl, BACl, PMACl, PADCl, etc., or one or two or more thereof are mixed and dissolved in isopropyl alcohol or a mixture of isopropyl alcohol and methanol.

[0038] A first electron transport layer 16 is formed on the side of the passivation layer 15 facing away from the perovskite light absorbing layer 14; It should be noted that the first electron transport layer 16 is prepared by organic vapor deposition. The first electron transport layer 16 prepared by vapor deposition is denser and more evenly dispersed. The material of the first electron transport layer 16 is C60, SnOX or TiOx.

[0039] A second electron transport layer 17 is formed on the side of the first electron transport layer 16 facing away from the passivation layer 15 .

[0040] It should be noted here that the second electron transport layer 17 is prepared by the ALD process. The second electron transport layer 17 prepared by the ALD process is denser, more evenly dispersed, and the stability of the inorganic material is higher, which effectively improves the stability of the crystalline silicon perovskite stacked battery.

[0041] In one embodiment of the present invention, the step of preparing the perovskite light absorbing layer 14 on the side of the second cavity layer 13 facing away from the first cavity layer 12 includes: A perovskite film is formed on the side of the second vacancy layer 13 facing away from the first vacancy layer 12 by flash evaporation or anti-solvent method; It should be noted that the perovskite film is the core light-absorbing layer of the tandem cell 20. Its quality and crystallinity directly impact the cell's photoelectric conversion efficiency. Perovskite films are primarily formed through flash evaporation or antisolvent methods. The flash evaporation method involves spin-coating a perovskite precursor solution onto the side of the second cavitation layer 13 facing away from the first cavitation layer 12. The solution is then rapidly heated to evaporate the solvent, forming a uniform perovskite film. The antisolvent method involves adding an antisolvent (such as toluene or chlorobenzene) during the spin-coating process, reducing the solubility of the precursor solution and inducing the rapid formation of perovskite crystals.

[0042] The perovskite film is subjected to an annealing and crystallization treatment at 80-120° C. for a first predetermined time to form a perovskite light absorbing layer 14 .

[0043] It should be noted that the first predetermined time is 15-25 minutes, preferably 20 minutes. Annealing and crystallization for 20 minutes can achieve the best balance between efficiency and stability. Annealing and crystallization of the perovskite film can promote crystallization of the perovskite film, reduce defects, optimize the crystal structure, and thus improve photoelectric performance.

[0044] In one embodiment of the present invention, the step of preparing the first cavity layer 12 on the side of the transparent conductive top layer facing away from the metal grid includes: Spin-coat a first cavity layer 12 on the side of the transparent conductive top layer facing away from the metal grid; performing ozone treatment on the first cavity layer 12 for a second predetermined time; The first cavity layer 12 is spin-coated again.

[0045] It should be noted here that the first hole layer 12 mainly plays a certain protective role for the silicon bottom battery. Ozone treatment of the first hole layer 12 can excite certain groups of the bottom battery and the first hole layer 12, which helps the small molecules of the second hole layer 13 to self-assemble and have better coating uniformity, so that the hole layer is more evenly distributed on the substrate.

[0046] In one embodiment of the present invention, the step of preparing a protective layer on the outer surface of the laminate battery 20 includes: Lead out the first negative electrode 7, the first positive electrode, the second negative electrode 9 and the second positive electrode 8; Prepare a first organic protective layer on the outer surface of the stacked battery 20; preparing an inorganic protective layer on the outer surface of the first organic protective layer; A second organic protective layer is prepared on the outer surface of the organic protective layer.

[0047] It should be noted that the first organic protective layer and the second organic protective layer are prepared by CVD or thermoplastic method, and the inorganic protective layer is prepared by CVD or thermoplastic method. Or SiOx, the inorganic protective layer is very dense, thereby preventing water from entering the perovskite battery and playing a role in protecting the perovskite battery, but the inorganic protective layer can react with the penetrating water molecules, and its stability is weaker than the organic protective layer; although the organic protective layer is not as dense as the inorganic protective layer, the organic protective layer does not react with water, and the organic protective layer has better stability. The organic protective layer complements the inorganic protective layer, and the organic protective layer can also play a protective role.

[0048] In one embodiment of the present invention, the encapsulation layer includes a front adhesive film 21, a rear adhesive film 22, a front plate layer 23, and a rear plate layer 24. The steps of encapsulating the laminated battery 20 provided with the protective layer through the encapsulation layer include: The stacked battery 20 is laminated to form a front film 21 on one side of the stacked battery 20 and a back film 22 on the other side of the stacked battery 20, with the first negative electrode 7, the first positive electrode, the second negative electrode 9, and the second positive electrode 8 sandwiched between the front film 21 and the back film 22; A front plate layer 23 is prepared on the side of the front adhesive film 21 facing away from the laminated battery 20 , and a rear plate layer 24 is prepared on the side of the rear adhesive film 22 facing away from the laminated battery 20 .

[0049] It should be noted that the front film 21 and the back film 22 are made of the same material, either EVA, POE, PVB, TPU, PIB, or EPE. The front panel 23 is made of laminated glass or a composite polymer material. Composite polymer materials offer transparency, weather resistance, and high water resistance. Composite polymer materials include ETFE, PVDF, or other materials. The back panel 24 is made of laminated glass or a weather-resistant backsheet. The weather-resistant backsheet is made of fiberglass, CPC, KPC, or other materials.

[0050] The present invention also provides a crystalline silicon perovskite tandem cell, which is prepared based on the preparation method of the crystalline silicon perovskite tandem cell described in any of the above embodiments. The crystalline silicon perovskite tandem cell includes a crystalline silicon cell substrate 10, a first negative electrode 7, a second positive electrode 8, a composite layer 11, a functional layer, a transparent conductive electrode 18, a metal grid line 19, a second negative electrode 9, a protective layer, and an encapsulation layer. The first negative electrode 7 and the second positive electrode 8 are arranged on the P-side of the crystalline silicon cell substrate 10, the composite layer 11 is arranged on the N-side of the crystalline silicon cell substrate 10, the functional layer is arranged on the side of the composite layer 11 facing away from the crystalline silicon cell substrate 10, the transparent conductive electrode 18 is arranged on the side of the functional layer facing away from the composite layer 11, and the transparent conductive electrode 18 is provided with a pattern. The metal grid line 19 is arranged on the side of the transparent conductive electrode 18 facing away from the functional layer, and the transparent conductive electrode 18 and the metal grid line 19 form a first positive electrode. The second negative electrode 9 is disposed in the peripheral area of ​​the first positive electrode and is connected to the metal grid 25 of the composite layer 11. The protective layer is disposed on the outer surface of the laminated battery 20, and the encapsulation layer is disposed on the outer surface of the protective layer.

[0051] In one embodiment of the present invention, the composite layer 11 includes a transparent conductive base layer, a metal grid and a transparent conductive top layer. The transparent conductive base layer is arranged on the N side of the crystalline silicon cell substrate 10, the metal grid is arranged on the side of the transparent conductive base layer facing away from the crystalline silicon cell substrate 10, and the transparent conductive top layer is arranged on the side of the metal grid facing away from the transparent conductive base layer.

[0052] In one embodiment of the present invention, the functional layer includes a first hole layer 12, a second hole layer 13, a perovskite light absorption layer 14, a passivation layer 15, a first electron transport layer 16 and a second electron transport layer 17. The first hole layer 12 is arranged on the side of the transparent conductive top layer away from the metal grid, the second hole layer 13 is arranged on the side of the first hole layer 12 away from the transparent conductive top layer, the perovskite light absorption layer 14 is arranged on the side of the second hole layer 13 away from the first hole layer 12, the passivation layer 15 is arranged on the side of the perovskite light absorption layer 14 away from the second hole layer 13, the first electron transport layer 16 is arranged on the side of the passivation layer 15 away from the perovskite light absorption layer 14, and the second electron transport layer 17 is arranged on the side of the first electron transport layer 16 away from the passivation layer 15.

[0053] In one embodiment of the present invention, the encapsulation layer includes a front film 21, a back film 22, a front plate layer 23 and a back plate layer 24. The front film 21 is arranged on one side of the laminate battery 20, and the back film 22 is arranged on the other side of the laminate battery 20. The front plate layer 23 is arranged on the side of the front film 21 away from the laminate battery 20, and the back plate layer 24 is arranged on the side of the back film 22 away from the laminate battery 20.

[0054] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A method for preparing a crystalline silicon perovskite tandem battery, characterized in that: include: A first negative electrode (7) and a second positive electrode (8) are prepared on the P surface of the crystalline silicon battery substrate (10); Preparing a composite layer (11) on the N-side of the crystalline silicon cell substrate (10); preparing a functional layer on a side of the composite layer (11) facing away from the crystalline silicon cell substrate (10); preparing a transparent conductive electrode (18) on a side of the functional layer facing away from the composite layer (11), and providing a pattern on the transparent conductive electrode (18); A metal grid line (19) is prepared on a side of the transparent conductive electrode (18) facing away from the functional layer, wherein the transparent conductive electrode (18) and the metal grid line (19) form a first positive electrode; Cleaning the peripheral region of the first positive electrode, preparing a second negative electrode (9) in the peripheral region of the first positive electrode, and connecting the second negative electrode (9) to the metal grid (25) of the composite layer (11), thereby obtaining a laminated battery (20); Preparing a protective layer on the outer surface of the stacked battery (20); The stacked battery (20) provided with the protective layer is encapsulated by an encapsulation layer.

2. The method for preparing the crystalline silicon perovskite tandem cell (20) according to claim 1, characterized in that: The step of preparing a composite layer (11) on the N-side of the crystalline silicon cell substrate (10) comprises: Preparing a transparent conductive substrate layer on the N-side of the crystalline silicon cell substrate (10); Preparing a metal grid on the side of the transparent conductive substrate layer facing away from the crystalline silicon cell substrate (10); A transparent conductive top layer is sputtered on the metal grid, and the transparent conductive base layer, the metal grid and the transparent conductive top layer form the composite layer (11).

3. The method for preparing the crystalline silicon perovskite tandem cell (20) according to claim 2, characterized in that: The step of preparing a functional layer on the side of the composite layer (11) facing away from the crystalline silicon cell substrate (10) comprises: Prepare a first cavity layer (12) on the side of the transparent conductive top layer facing away from the metal grid; Spin-coating a second cavity layer (13) on the side of the first cavity layer (12) facing away from the transparent conductive top layer; A perovskite light absorbing layer (14) is prepared on the side of the second hole layer (13) facing away from the first hole layer (12); A passivation layer (15) is prepared on a side of the perovskite light absorption layer (14) facing away from the second hole layer (13); preparing a first electron transport layer (16) on a side of the passivation layer (15) facing away from the perovskite light absorbing layer (14); A second electron transport layer (17) is prepared on the side of the first electron transport layer (16) facing away from the passivation layer (15).

4. The method for preparing the crystalline silicon perovskite tandem cell (20) according to claim 3, characterized in that: The step of preparing a perovskite light absorbing layer (14) on a side of the second hole layer (13) facing away from the first hole layer (12) comprises: forming a perovskite film on the side of the second cavity layer (13) facing away from the first cavity layer (12) by flash evaporation or anti-solvent method; The perovskite film is subjected to an annealing crystallization treatment at 80-120° C. for a first predetermined time to form the perovskite light absorbing layer (14).

5. The method for preparing the crystalline silicon perovskite tandem cell (20) according to claim 4, characterized in that: The step of preparing a first cavity layer (12) on the side of the transparent conductive top layer facing away from the metal grid comprises: Spin coating the first cavity layer (12) on the side of the transparent conductive top layer facing away from the metal grid; performing ozone treatment on the first cavity layer (12) for a second predetermined time; The first cavity layer (12) is spin-coated again.

6. The method for preparing the crystalline silicon perovskite tandem cell (20) according to any one of claims 3 to 5, characterized in that: The thickness of the passivation layer (15) is 1-3 nm.

7. The method for preparing the crystalline silicon perovskite tandem cell (20) according to any one of claims 1 to 5, characterized in that: The step of preparing a protective layer on the outer surface of the stacked battery (20) comprises: Leading out the first negative electrode (7), the first positive electrode, the second negative electrode (9) and the second positive electrode (8); Preparing a first organic protective layer on the outer surface of the stacked battery (20); preparing an inorganic protective layer on the outer surface of the first organic protective layer; A second organic protective layer is prepared on the outer surface of the organic protective layer.

8. The method for preparing the crystalline silicon perovskite tandem cell (20) according to claim 7, characterized in that: The packaging layer comprises a front adhesive film (21), a rear adhesive film (22), a front plate layer (23) and a rear plate layer (24), and the step of packaging the laminated battery (20) provided with the protective layer through the packaging layer comprises: The stacked battery (20) is laminated to form the front glue film (21) on one side of the stacked battery (20), and the back glue film (22) is formed on the other side of the stacked battery (20), wherein the first negative electrode (7), the first positive electrode, the second negative electrode (9), and the second positive electrode (8) are sandwiched between the front glue film (21) and the back glue film (22); The front plate layer (23) is prepared on the side of the front adhesive film (21) facing away from the laminated battery (20), and the rear plate layer (24) is prepared on the side of the rear adhesive film (22) facing away from the laminated battery (20).

9. The method for preparing the crystalline silicon perovskite tandem cell (20) according to claim 8, characterized in that: The material of the front plate layer (23) is laminated glass or a composite polymer material, and the material of the rear plate layer (24) is laminated glass or a weather-resistant back plate.

10. A crystalline silicon perovskite tandem cell (20), wherein the crystalline silicon perovskite tandem cell (20) is prepared based on the preparation method of the crystalline silicon perovskite tandem cell (20) according to any one of claims 1 to 9, characterized in that: include: Crystalline silicon cell substrate (10); A first negative electrode (7) and a second positive electrode (8), wherein the first negative electrode (7) and the second positive electrode (8) are arranged on the P surface of the crystalline silicon cell substrate (10); A composite layer (11), the composite layer (11) being arranged on the N-side of the crystalline silicon cell substrate (10); a functional layer, the functional layer being arranged on a side of the composite layer (11) facing away from the crystalline silicon cell substrate (10); a transparent conductive electrode (18), the transparent conductive electrode (18) being arranged on a side of the functional layer facing away from the composite layer (11), the transparent conductive electrode (18) being provided with a pattern; A metal grid line (19), the metal grid line (19) being arranged on a side of the transparent conductive electrode (18) facing away from the functional layer, the transparent conductive electrode (18) and the metal grid line (19) forming a first positive electrode; A second negative electrode (9) is arranged in a peripheral area of ​​the first positive electrode, and the second negative electrode (9) is connected to the metal grid (25) of the composite layer (11); A protective layer, the protective layer being arranged on the outer surface of the stacked battery (20); The encapsulation layer is arranged on the outer surface of the protective layer.

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