Vapor deposition source

Abstract

The invention provides an evaporation source. The evaporation source comprises a heating chamber and a limiting mechanism. The heating chamber is provided with at least one set of evaporation chambers, each set of evaporation chambers extends in the first direction, each evaporation chamber is provided with at least one nozzle hole, the limiting mechanism is located in the emitting direction of the nozzle holes and comprises a first limiting plate and a second limiting plate, and the first limiting plate and the second limiting plate are arranged in the second direction. The first limiting plate and the second limiting plate at least partially avoid the nozzle hole in the third direction, the edge, facing the second limiting plate, of the first limiting plate comprises at least one first arch-shaped edge, and an arch protrusion of the first arch-shaped edge faces the direction away from the second limiting plate. The edge, facing the first limiting plate, of the second limiting plate comprises at least one second arch-shaped edge, and an arch protrusion of the second arch-shaped edge faces the direction away from the first limiting plate. According to the evaporation source, the evaporation angle can be effectively limited, and the electric leakage condition of a high-conductivity material is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of evaporation equipment, and in particular relates to an evaporation source. Background Art

[0002] Organic Light Emitting Diode (OLED) display technology has the advantages of low energy consumption, low cost, self-luminescence, wide viewing angle and fast response speed, and has been increasingly widely used.

[0003] In the traditional OLED display panel manufacturing process, pixel patterning is typically achieved through a fine metal mask (FMM). The mature FMM technology eliminates the limitations of traditional OLED processes on display size, resolution, and other screen performance, offering the advantages of high performance, full-scale, and agile delivery. Patents CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A describe the technology without fine metal masks for reference.

[0004] Multiple steps in FMM technology can be implemented using an evaporation machine. For example, when preparing electronic devices on a substrate, the substrate can be placed in the evaporation machine, and the evaporation line source is used to deposit the evaporated material onto the substrate to form structures such as circuit layers or electrode layers. The evaporation line source has a scanning direction in which the equipment scans during the evaporation process. To limit the evaporation angle of the evaporation line source in this scanning direction, two limit plates are usually installed above the evaporation line source. These two limit plates are arranged above the evaporation line source and are arranged parallel to the scanning direction. These two limit plates can only limit the evaporation angle in the scanning direction and cannot effectively limit the evaporation angle in other evaporation directions. If the evaporation material is a highly conductive material, there may also be a risk of leakage. Summary of the Invention

[0005] The object of the present invention is to provide an evaporation source, aiming to solve the technical problem that the existing evaporation line source can only limit the evaporation angle in the scanning direction, which may bring the risk of leakage.

[0006] To achieve the above object, the technical solutions adopted by the present invention are as follows:

[0007] In a first aspect, an embodiment of the present invention provides an evaporation source, comprising a heating chamber and a limiting mechanism;

[0008] The heating chamber includes at least one group of evaporation chambers, each group of the evaporation chambers extending along a first direction. When multiple groups of the evaporation chambers are provided, the multiple groups of the evaporation chambers are spaced apart along a second direction, the second direction being perpendicular to the first direction. The evaporation chamber has at least one nozzle hole, the emission direction of the nozzle hole is a third direction, the third direction being perpendicular to the first direction and the second direction.

[0009] The limiting mechanism is located in the exit direction of the nozzle hole, and the limiting mechanism includes a first limiting plate and a second limiting plate. The first limiting plate and the second limiting plate are arranged along the second direction, and the orthographic projections of the first limiting plate and the second limiting plate in the third direction do not overlap with the orthographic projection of the nozzle hole in the third direction. The edge of the first limiting plate facing the second limiting plate includes at least one first arched edge, and the arch bulge of the first arched edge faces away from the second limiting plate. The edge of the second limiting plate facing the first limiting plate includes at least one second arched edge, and the arch bulge of the second arched edge faces away from the first limiting plate.

[0010] As some possible implementations of the first aspect, the first arched edge and the second arched edge are arranged opposite to each other in the second direction;

[0011] Preferably, the width of the first arched edge in the first direction is equal to the width of the second arched edge in the first direction.

[0012] As some possible implementations of the first aspect, a restriction area is formed between the first arched edge and the corresponding second arched edge, and one nozzle hole is provided in each restriction area.

[0013] As some possible implementations of the first aspect, the cross-sectional shape of the nozzle hole is circular, elliptical, or regular polygonal;

[0014] Preferably, the cross-sectional shape of the nozzle hole is circular.

[0015] As some possible implementations of the first aspect, each group of the evaporation chambers is provided with a plurality of nozzle holes, and the plurality of nozzle holes are arranged at intervals along a nozzle row wiring, and the nozzle row wiring extends along the first direction.

[0016] As some possible implementations of the first aspect, the edge of the first limiting plate facing the second limiting plate includes a plurality of first arched edges, and the plurality of first arched edges are arranged in sequence along the first direction; the edge of the second limiting plate facing the first limiting plate includes a plurality of second arched edges, and the plurality of second arched edges are arranged in sequence along the first direction, and the first arched edges correspond one-to-one to the second arched edges.

[0017] As some possible implementations of the first aspect, at least one of the first arched edge and the second arched edge includes a curved surface, and a central angle corresponding to the curved surface is 60°-180°.

[0018] As some possible implementations of the first aspect, the first arched edge and the second arched edge are connected to ends on the same side in the first direction.

[0019] As some possible implementations of the first aspect, the first limiting plate is spaced apart from the second limiting plate.

[0020] As some possible implementations of the first aspect, the heating chamber includes at least three groups of the evaporation chambers, the first limiting plate is located between two adjacent groups of the evaporation chambers, and the second limiting plate is located on a side of the first limiting plate away from the evaporation chambers in the third direction;

[0021] Preferably, two first limiting plates are provided between two adjacent evaporation chambers, and the two first limiting plates are respectively used to limit the evaporation angles of the two adjacent evaporation chambers.

[0022] As some possible implementations of the first aspect, each group of the evaporation chambers is provided with a plurality of nozzle holes, and the plurality of nozzle holes are arranged at intervals along the nozzle row wiring, the nozzle row wiring extends along the first direction, and the farthest distance from each point on the second arch edge to the nozzle row wiring is greater than the farthest distance from each point on the first arch edge to the nozzle row wiring.

[0023] As some possible implementations of the first aspect, the limiting mechanism also includes a third limiting plate and a fourth limiting plate, the third limiting plate is located on the side of the first limiting plate away from the heating chamber and is separated from the first limiting plate, the fourth limiting plate is located on the side of the second limiting plate away from the heating chamber and is separated from the second limiting plate, the third limiting plate and the fourth limiting plate are arranged along the second direction, and the third limiting plate and the fourth limiting plate at least partially avoid the nozzle hole in the third direction.

[0024] As some possible implementations of the first aspect, the edge of the third limiting plate facing the fourth limiting plate includes at least one third arched edge, the arch of the third arched edge is facing away from the fourth limiting plate, and the edge of the fourth limiting plate facing the third limiting plate includes at least one fourth arched edge, the arch of the fourth arched edge is facing away from the first limiting plate; the third arched edge and the first arched edge jointly limit the evaporation angle on the same side of the airflow ejected from the nozzle hole, and the fourth arched edge and the second arched edge jointly limit the evaporation angle on the same side of the airflow ejected from the nozzle hole.

[0025] As some possible implementations of the first aspect, the evaporation source also includes a rotating mechanism, which is arranged in the evaporation chamber and can rotate around a rotation axis. The rotating mechanism is provided with a plurality of placement areas surrounding the rotation axis, each of the placement areas is used to place the evaporation material, the evaporation chamber has an evaporation area, at least part of the rotating mechanism is located in the evaporation area, and the heating chamber can heat the placement area that rotates to the evaporation area.

[0026] As some possible implementations of the first aspect, the evaporation chamber includes a heating shell, a crucible and a heating body, the crucible forms the evaporation chamber, the heating shell wraps at least part of the crucible, the heating body is located in the gap between the heating shell and the crucible, and the heating temperature of the heating body for the part of the crucible close to the nozzle hole is higher than the heating temperature of the part of the crucible away from the nozzle hole.

[0027] As some possible implementations of the first aspect, the heating body includes a heating wire wound around the crucible, and the density of the heating wire near the nozzle hole is greater than the density of the heating wire far from the nozzle hole.

[0028] In a second aspect, an evaporation source is provided, comprising a heating chamber and a limiting mechanism;

[0029] The heating chamber includes at least one nozzle hole group, each of the nozzle hole groups includes at least one nozzle hole. When multiple nozzle hole groups are provided and each of the nozzle hole groups includes multiple nozzle holes, the multiple nozzle holes in each nozzle hole group extend along a first direction, and the multiple nozzle hole groups are arranged at intervals along a second direction, which is perpendicular to the first direction. The nozzle holes have an emission direction of a third direction, which is perpendicular to the first direction and the second direction.

[0030] The limiting mechanism is located in the exit direction of the nozzle hole, and the limiting mechanism forms a limiting gap. The limiting gap is used for allowing the airflow ejected from the nozzle hole to pass through and limiting the evaporation angle of the airflow. The limiting gap has a first edge and a second edge in the second direction; the first edge has at least one first arch portion, and the middle part of the first arch portion protrudes in the direction away from the nozzle hole, and / or the second edge has at least one second arch portion, and the middle part of the second arch portion protrudes in the direction away from the nozzle hole.

[0031] As some possible implementations of the second aspect, an orthographic projection of the limiting mechanism in the third direction does not overlap with an orthographic projection of the nozzle hole in the third direction.

[0032] As some possible implementations of the second aspect, the first edge has a plurality of first arch portions, the second edge has a plurality of second arch portions, the first arch portions and the second arch portions are arranged opposite to each other in the second direction, and the oppositely arranged first arch portions and second arch portions are both extended along the circumference of the same nozzle hole.

[0033] The technical effect of the present invention compared to the prior art is that compared to the evaporation source with straight edges of the two limiting plates, the first arched edge and the second arched edge can partially block the evaporation material. When the evaporation material is evaporated from the evaporation source, it will be blocked by the two extended end portions of the first arched edge and the two extended end portions of the second arched edge, changing its original movement trajectory, so that only the evaporation material that is not blocked within the specific angle range defined by the first limiting area and the second limiting area can successfully reach the substrate. This local shielding effect can effectively limit the evaporation angle, reduce the distribution of evaporation material in unnecessary directions, and help to accurately control the evaporation area and angle. It can not only ensure the process capability of the traditional evaporation source, but also reduce the leakage of high-conductivity materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments of the present invention or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 This is a cross-sectional view of the current OLED structure;

[0036] Figure 2 is a side view of an evaporation source provided in some embodiments of the present invention;

[0037] Figure 3 yes Figure 2 A top view of the evaporation source provided in ;

[0038] Figure 4 is a side view of an evaporation source provided in other embodiments of the present invention;

[0039] Figure 5 is a side view of an evaporation source provided in some further embodiments of the present invention;

[0040] Figure 6 is a top view of a rotating mechanism in an evaporation source provided in some embodiments of the present invention;

[0041] Figure 7 yes Figure 2 A cross-sectional view of the evaporation source in FIG.

[0042] Figure 8 is a side view of an evaporation source provided in other embodiments of the present invention;

[0043] Figure 9 yes Figure 8 Top view of the evaporation source in FIG.

[0044] Description of reference numerals:

[0045] 91. Array substrate; 92. Isolation structure; 92a. Isolation opening; 93; 931. First electrode; 932. Light-emitting structure; 933. Second electrode; 94. Pixel defining layer;

[0046] 10. Heating chamber; 101. Evaporation area; 11. Evaporation chamber; 12. Nozzle hole; 111. Heating housing; 112. Crucible; 1120. Heating chamber; 113. Heating element; 20. Limiting mechanism; 21. First limiting plate; 211. First arched edge; 22. Second limiting plate; 221. Second arched edge; 23. Third limiting plate; 24. Fourth limiting plate; 30. Rotating mechanism; 301. Placement area; 90. Substrate;

[0047] 40. Heating chamber; 401. Nozzle hole; 50. Limiting mechanism; 501. Limiting gap; 51. First edge; 511. First arched portion; 52. Second edge; 521. Second arched portion; 50a. First limiting plate; 50b. Second limiting plate; 90. Substrate. DETAILED DESCRIPTION

[0048] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0049] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in the present application without making any creative efforts shall fall within the scope of protection of the present application.

[0050] It should be noted that similar reference numerals and letters represent similar items in the following figures. Therefore, once an item is defined in one figure, it does not need to be further defined or explained in subsequent figures. It should be noted that different features in the embodiments of the present application can be combined with each other without conflict.

[0051] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limiting the present invention.

[0052] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature identified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0053] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0054] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments.

[0055] The evaporation machine is used to evaporate and deposit specific evaporation materials on the surface of the substrate under a vacuum environment, thereby forming a thin film layer with specific functions and performance on the substrate to meet the manufacturing needs of various industries such as electronics, optics, and semiconductors. For example, it forms conductive layers and insulating layers in semiconductor chip manufacturing.

[0056] The evaporation machine includes a vacuum chamber, a substrate fixing device, an evaporation source, a heating system and a control system.

[0057] The vacuum chamber provides a vacuum environment for the deposition process, preventing impurities in the air from contaminating the deposition material and substrate, ensuring the purity and quality of the film. The vacuum chamber is equipped with a vacuum pumping system that can quickly extract the air from the chamber to achieve the required vacuum level.

[0058] The substrate fixture is located within the vacuum chamber and is used to secure the substrate to maintain stability during the deposition process. The fixture allows for rotational and translational movement of the substrate to ensure uniform deposition of the deposition material.

[0059] The evaporation source is arranged in a vacuum chamber and includes a heating chamber and a limiting mechanism. The heating chamber is used to store and evaporate the evaporation material. The limiting mechanism is arranged above the heating chamber to achieve precise control of the evaporation angle and range.

[0060] The control system is electrically connected to the evaporation source and is used to control the operation of various components of the evaporation machine, including the adjustment of the vacuum degree, the movement of the substrate, the heating temperature and time of the evaporation source, etc., to achieve precise evaporation process control.

[0061] The thin film formed on the substrate by the material evaporated from the evaporation source can be formed into components with different functions according to specific application requirements. In electronic device manufacturing, it can form conductive circuits and electrode layers to achieve circuit conduction and signal transmission. In the optical field, it can form anti-reflection films, reflective films, and filter films to improve the optical performance of optical components, such as reducing light reflection, increasing light transmittance, and filtering specific wavelengths of light. In semiconductor chip manufacturing, it can form insulating layers and passivation layers to isolate different circuit components and protect the chip surface from external environmental influences.

[0062] The substrate may be an organic light emitting diode (OLED) display panel or a quantum dot light emitting diode (QLED) display panel. In the following embodiments, an OLED array substrate is used as an example for description.

[0063] See also Figure 1 , the OLED includes an array substrate 91 , an isolation structure 92 and a plurality of light-emitting devices 93 .

[0064] The array substrate 91 includes a pixel circuit layer and a planarization layer. The pixel circuit layer includes pixel circuits for driving the light-emitting devices 93 to emit light. The first electrode 931 is electrically connected to the transistors in the pixel circuit layer through vias. Furthermore, the pixel circuit layer includes at least one insulating layer, which can include at least one of an inorganic layer and an organic layer. Furthermore, the array substrate 91 includes scan lines that provide scan signals (Scan) and data lines that provide data signals (Data) to the pixel circuits.

[0065] An isolation structure 92 is located on one side of the array substrate 91 and encloses a plurality of isolation openings 92a. Multiple light-emitting devices 93 are located on one side of the array substrate 91. In one embodiment, one light-emitting device 93 is disposed corresponding to one isolation opening 92a. At least a portion of the light-emitting device 93a is disposed within the corresponding isolation opening 92a. In another embodiment, multiple light-emitting devices 93 are disposed corresponding to one isolation opening 92a. For example, multiple light-emitting devices 93 emitting the same color are disposed corresponding to one isolation opening 92a.

[0066] Multiple light-emitting devices 93 can be used to emit light of three different colors. The light-emitting devices 93 include a stacked first electrode 931, a light-emitting structure 932, and a second electrode 933. The first electrode 931 is disposed on the array substrate 91. A pixel-defining layer 94 covers the ends of the first electrode 931. The pixel-defining layer 94 is provided with a pixel opening, through which the first electrode 931 is exposed. The light-emitting structure 932 covers the sidewalls of the pixel opening of the pixel-defining layer 94 and the side of the pixel-defining layer 94 facing away from the array substrate 91. Each light-emitting structure 932 is located within the pixel opening and contacts the first electrode 931.

[0067] The first electrode 931 may be an anode, and the second electrode 933 may be a cathode. The first electrode 931 of each light emitting device 93 may be connected to a pixel circuit through a via hole, so that the pixel circuit drives the light emitting device 93 to emit light.

[0068] The first electrode 931 may include a multilayer structure. For example, the first electrode 931 includes a reflective layer and a pair of conductive oxide layers covering the upper and lower surfaces of the reflective layer, respectively. The reflective layer can be formed using, for example, a metal material with excellent light reflectivity, such as silver. Each conductive oxide layer can be formed from, for example, a transparent conductive oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or IGZO (Indium Gallium Zinc Oxide). The second electrode 933 is formed from, for example, a metal material such as an alloy of magnesium and silver (MgAg).

[0069] During OLED manufacturing, the evaporation machine, with its ability to precisely control material evaporation and deposition, can be used to process multiple key structures of OLED devices, such as the light-emitting structure 932, partial layers of the cathode and anode, and partial metal layers of the isolation structure 92. This is described in detail below.

[0070] The light-emitting structure 932 is the core structure of the OLED to realize the light-emitting function. It is composed of a variety of organic materials with different functions, such as the hole injection layer (HIL), the hole transport layer (HTL), the light-emitting layer (EML), the electron transport layer (ETL) and the electron injection layer (EIL). The evaporation machine precisely controls the heating temperature and time to evaporate and deposit different organic materials on the substrate layer by layer in a specific order and thickness requirements. It is necessary to use the limiting mechanism in the evaporation source to control the evaporation angle to ensure that the organic material is evenly and accurately covered on the surface of the substrate, forming a light-emitting structure with excellent performance, and ensuring the luminous efficiency, color purity and service life of the OLED device.

[0071] The cathode of an OLED is typically made of a low-work-function metal or metal alloy, such as magnesium-silver (Mg:Ag) or aluminum (Al). An evaporator deposits the cathode material onto the organic layer at a uniform thickness, creating a favorable electron injection interface. Limiting the evaporation angle prevents excessive diffusion of the cathode material into the organic layer, which could impact device performance. Furthermore, multiple line sources arranged in conjunction with a rotation mechanism are required to achieve uniform cathode deposition across a large substrate area, ensuring consistent electrical performance and luminous uniformity.

[0072] The reflective layer of the OLED anode is made of a metal material such as silver (Ag). It serves as the base layer of the first electrode 931 and is formed by heating and evaporating the metal in an evaporation machine. Controlling the evaporation angle ensures a uniform thickness of the reflective layer, improving light reflection efficiency. The reflective layer requires precise control of the evaporation rate and deposition angle of the oxide material in the evaporation machine to optimize the anode work function and enhance hole injection.

[0073] The evaporation source is typically a linear source, meaning its spray holes are strip-shaped and extend in a straight line. During the deposition process on the substrate, the linear source scans along a scanning direction to improve film uniformity and increase the coating area. The linear source evaporates the deposition material and ejects the gaseous deposition material from the spray holes. However, if the divergence angle of the gaseous deposition material is too large, the amount of material reaching different locations on the substrate will vary significantly depending on the distance from the linear source and the angle. For example, areas close to the linear source may receive too much material, while areas farther away from the source or non-central areas of the substrate may receive less material. This can lead to uneven film thickness on the substrate, affecting the quality and performance of the film.

[0074] To limit the deposition angle of the line source in the scanning direction, two limiting plates are typically placed above the line source. These plates are positioned above the deposition line source and parallel to the scanning direction. Limiting plates are plates whose adjacent edges extend along a straight line. That is, the edge of each limiting plate facing the other is a straight line parallel to the extension direction of the line source. For example, in a case where the spray hole faces upward and the substrate is positioned above the spray hole, two limiting plates are positioned above the spray hole, one on either side of the line source.

[0075] These two limiting straight plates can only limit the evaporation angle in the scanning direction and cannot effectively limit the evaporation angle in other evaporation directions. This leads to performance limitations in the application of ViP technology, especially when the evaporation material is a highly conductive material. A larger evaporation angle will increase the deposition of the highly conductive material at the edge of the substrate. Because the electric field distribution at the edge is generally more complex and prone to electric field concentration, excessive deposition of highly conductive materials at the edge further exacerbates the unevenness of the electric field, increasing the current density at the edge and making leakage more likely. At the same time, for line sources, there may be an edge effect, that is, the evaporation rate at the two ends of the line source is slightly different from that in the middle. This may lead to uneven thickness of the thin film deposited on the substrate, reducing the utilization rate of the evaporation material. Due to the high defective rate and the need for continuous high-intensity evaporation on long threads, the line source needs to be shut down for adjustment or maintenance more frequently, which limits the production cycle and reduces the equipment utilization rate.

[0076] To solve the above problems, an embodiment of the present invention provides an evaporation source that can limit the evaporation angle in multiple directions, improve the utilization rate of evaporation materials and equipment utilization rate, and extend the production cycle.

[0077] See also Figure 2 In an embodiment of the present invention, the evaporation source includes a heating chamber 10 and a limiting mechanism 20. The limiting mechanism 20 can be connected to the heating chamber 10, can be connected to other structural components, or can be independently provided, which is not limited here.

[0078] The heating chamber 10 is formed with at least one group of evaporation chambers 11. Each group of evaporation chambers 11 extends along a first direction, i.e., the extension path of each group of evaporation chambers 11 is a straight line extending along the first direction. When multiple groups of evaporation chambers 11 are provided, the multiple groups of evaporation chambers 11 are arranged in a spaced-apart arrangement along a second direction. The extension paths of the groups of evaporation chambers 11 can be parallel or substantially parallel, without limitation. The second direction is perpendicular to the first direction.

[0079] Each group of evaporation chambers 11 is used to hold the evaporation material. Each group of evaporation chambers 11 can hold the same evaporation material, and multiple groups of evaporation chambers 11 can be used to deposit a variety of materials. Multiple groups of evaporation chambers 11 can operate simultaneously, performing parallel evaporation deposition on different substrates 90 or different regions of the same substrate 90. Compared to depositing films one by one in a single chamber, this significantly increases the coating output per unit time, enabling the evaporation of a large number of substrates 90 in a shorter time, meeting the needs of large-scale production.

[0080] The evaporation chamber 11 has at least one nozzle hole 12 for supplying gaseous evaporation material to be ejected. The ejection direction of the nozzle hole 12 is the third direction, that is, the central axis of the nozzle hole 12 extends along the third direction, which is perpendicular to the first direction and the second direction. Figure 2 In the figure, the third direction is the up-down direction, the first direction is the front-back direction, and the second direction is the left-right direction. The cross-section of the nozzle hole 12 can be strip-shaped or non-strip-shaped. When the cross-section of the nozzle hole 12 is strip-shaped and the length is long, the evaporation source is an evaporation line source. When the cross-section of the nozzle hole 12 is strip-shaped but the length is short (such as a rectangle), or the cross-section of the nozzle hole 12 is non-strip-shaped (such as a circle, an ellipse, a polygon, etc.), the evaporation source is a point source (each evaporation chamber 11 has one nozzle hole 12) or a point-line source (each evaporation chamber 11 has multiple nozzle holes 12, and the multiple nozzle holes 12 are arranged in a row along the first direction). When the evaporation source is a point-line source, the evaporation chamber 11 may include multiple sub-cavities, each sub-cavity is connected to one or more nozzle holes 12, or the evaporation chamber 11 may only form one cavity, and all nozzle holes 12 are connected to the cavity. There is no limitation here.

[0081] Please combine Figure 3The limiting mechanism 20 includes a first limiting plate 21 and a second limiting plate 22. The first limiting plate 21 and the second limiting plate 22 can both be flat or block-shaped, as long as they have edges that can limit the evaporation angle. The first limiting plate 21 and the second limiting plate 22 are arranged along the second direction. The orthographic projections of the first limiting plate 21 and the second limiting plate 22 in the third direction do not overlap with the orthographic projections of the nozzle hole 12 in the third direction, that is, the limiting mechanism 20 at least partially avoids the nozzle hole 12. It can be understood that in the up and down directions, the first limiting plate 21 completely avoids the nozzle hole 12, or partially avoids the nozzle hole 12, and the second limiting plate 22 completely avoids the nozzle hole 12, or partially avoids the nozzle hole 12. The first limiting plate 21 can be partially connected or completely separated, and there is no restriction here. The edge of the first limiting plate 21 facing the second limiting plate 22 includes at least one first arched edge 211, the arch of the first arched edge 211 protruding in a direction away from the second limiting plate 22, that is, the middle portion of the first arched edge 211 protrudes in a direction away from the second limiting plate 22, and the portion enclosed by the line connecting the two extended ends of the first arched edge 211 and the first arched edge 211 can be defined as a first limiting area. The edge of the second limiting plate 22 facing the first limiting plate 21 includes at least one second arched edge 221, the arch of the second arched edge 221 protruding in a direction away from the first limiting plate 21, that is, the middle portion of the second arched edge 221 protrudes in a direction away from the first limiting plate 21, and the portion enclosed by the line connecting the two extended ends of the second arched edge 221 and the second arched edge 221 can be defined as a second limiting area. The above-mentioned arch shape includes a curved shape, an arc shape, a broken line shape, etc., as long as the middle part thereof bulges toward one side to form an arch shape.

[0082] The evaporation angle refers to the angle between the direction of movement of the evaporation material after it is emitted from the evaporation source and the normal to the surface of the substrate 90. Compared to an evaporation source with straight edges on the two limiting plates, the first arched edge 211 and the second arched edge 221 can partially block the evaporation material. When the evaporation material is evaporated from the evaporation source, it will be blocked by the two extended end portions of the first arched edge 211 and the two extended end portions of the second arched edge 221, changing its original movement trajectory. Only the evaporation material that is not blocked within the specific angle range defined by the first limiting area and the second limiting area can successfully reach the substrate 90. This local blocking effect can effectively limit the evaporation angle, reduce the distribution of the evaporation material in unnecessary directions, and help to accurately control the evaporation area 101 and angle. It can not only ensure the process capability of the traditional evaporation source, but also reduce the leakage of high-conductivity materials.

[0083] See also Figure 3Optionally, the edge of the first limiting plate 21 facing the second limiting plate 22 includes a plurality of first arched edges 211, and the plurality of first arched edges 211 are arranged in sequence along the first direction so that the edge of the first limiting plate 21 forms a wavy or quasi-wavy edge. The edge of the second limiting plate 22 facing the first limiting plate 21 includes a plurality of second arched edges 221, and the plurality of second arched edges 221 are arranged in sequence along the first direction so that the edge of the second limiting plate 22 forms a wavy or quasi-wavy edge, and the first arched edges 211 correspond one-to-one with the second arched edges 221. The wavy edges cause the evaporation material to change its direction of movement after colliding with the edges of the first limiting plate 21 and the second limiting plate 22 during the evaporation process. Compared with straight edges, wavy edges can define multiple specific areas on the substrate 90 to limit the evaporation angle in these multiple specific areas. The wavy edge can make the evaporation material leave the line source from different positions and angles during the evaporation process, increasing the randomness and uniformity of the distribution of the evaporation material. Compared with the straight edge, the wavy edge can make the evaporation material more evenly scattered to the substrate 90 (such as Figure 2 ), reducing the unevenness of the film thickness and improving the consistency of the coating on the entire surface of the substrate 90. In addition, during the evaporation process, the conventional limit plate with straight edges may produce shadow areas near the line source, resulting in less deposition of evaporation material in these areas. The wavy edge can break this regular shadow distribution, allowing the evaporation material to cover these shadow areas more effectively, improving the coverage of evaporation and reducing film defects caused by shadow effects. In addition, the wavy edge helps to change the airflow distribution near the evaporation source. When the evaporation material is evaporated, the surrounding airflow will affect its transmission and distribution. The wavy edge can disrupt the airflow, making the airflow more turbulent and uniform, thereby driving the evaporation material to diffuse more evenly onto the substrate 90, further improving the uniformity of evaporation. Secondly, at the edge of the evaporated film, due to the different scattering and deposition methods of the evaporation material, it is easy for the film thickness or performance at the edge to be inconsistent with that in the central area, that is, the edge effect. The wavy edge of the limiting plate can make the distribution of the evaporated material at the edge portion smoother, reduce the edge effect, and make the performance of the film on the entire substrate 90 more stable and consistent.

[0084] See also Figure 2 and Figure 3 In some embodiments, the first arched edge 211 and the second arched edge 221 are disposed opposite each other in the second direction, and the width of the first arched edge 211 in the first direction is equal to the width of the second arched edge 221 in the first direction. In this way, the area defined by the first arched edge 211 and the second arched edge 221 on the substrate 90 can be concentrated in a specific region, thereby improving the accuracy of controlling the vapor deposition area 101 and further reducing material deposition in non-specific areas.

[0085] See also Figure 2 and Figure 3 In some embodiments, each group of evaporation chambers 11 is provided with multiple nozzle holes 12, with the multiple nozzle holes 12 arranged at intervals along a nozzle array line extending along a first direction. In other words, the evaporation source is a point-line source. A point-line source combines the characteristics of both a point source and a line source, consisting of multiple point sources arranged in a linear pattern. Compared to traditional line sources, point-line sources can provide more uniform material distribution during the evaporation process. Line source evaporation can experience edge effects, where the evaporation rate at the ends of the line source differs slightly from that in the middle, potentially leading to uneven film thickness on the substrate 90. However, a point-line source, through the synergistic effect of multiple point sources, can more precisely control the distribution of the evaporated material and reduce this unevenness. This means that during the production process, for products requiring high film uniformity, using a point-line source can reduce the defective rate caused by film unevenness, thereby improving production efficiency and indirectly extending the production cycle because frequent shutdowns for adjustments or reprocessing are unnecessary. Each point source in a point-line system can be independently controlled, making process adjustments more flexible to better suit various production needs and reducing production interruptions or product quality issues caused by improper process adjustments. Furthermore, since multiple point sources in a point-line system share the evaporation task, each source has a relatively light workload, potentially extending its service life and reducing the frequency of downtime required for replacement or maintenance due to source damage. This allows the evaporation source equipment to operate continuously for longer periods of time, thereby extending production cycles and improving equipment utilization.

[0086] See also Figure 3In some embodiments, a restricted area is formed between the first arched edge 211 and the corresponding second arched edge 221, and the restricted area includes the above-mentioned first restricted area, the above-mentioned second restricted area, and the interval area between the first restricted area and the second restricted area. The area between the first restricted area and the second restricted area refers to the quadrilateral area formed by connecting the endpoints of the two extended ends of the first arched edge 211 and the endpoints of the two extended ends inside the second arched edge 221 in sequence. A nozzle hole 12 is provided in each restricted area, that is, the evaporation source is a point source or a point-line source. The nozzle hole 12 can be located in at least one of the first restricted area, the second restricted area, and the interval area. There is no limitation here, as long as the nozzle hole 12 is located within the projection of the restricted area in the first direction. Each limiting zone is equipped with a nozzle hole 12, which precisely limits the angle of the material emitted from each nozzle hole 12. This better adapts to the discrete characteristics of point sources and optimizes the evaporation angle of each point source individually, avoiding the angular deviation that may be caused by the uniform limitation of line sources. At the same time, the boundaries of each limiting zone more effectively block and guide the evaporated material emitted from the nozzle hole 12, concentrating it on the target substrate 90 area. Compared to the wavy limiting plate of a line source, this design can more accurately control the propagation range of the material, reduce scattering and deposition of material in non-target areas, thereby improving material utilization and reducing material costs.

[0087] Optionally, the cross-sectional shape of the nozzle hole 12 is circular, elliptical, or a regular polygon. In other embodiments, the cross-sectional shape of the nozzle hole 12 may also be an irregular shape, which is not limited here. A circular nozzle has relatively consistent dimensions in all directions, and the vapor deposition material emitted from the point source has better spatial symmetry, allowing it to be more evenly distributed around the periphery. The angular distribution of the vapor deposition material is also relatively concentrated and easy to predict, facilitating precise angle control using devices such as limit plates.

[0088] Optionally, at least one of the first arched edge 211 and the second arched edge includes a curved surface that matches the circular cross-section nozzle, can better adapt to the symmetrical distribution characteristics of the material emitted by the circular nozzle, and more accurately limit the angle of the material emitted by the circular cross-section nozzle.

[0089] Optionally, the central angle corresponding to the arc surface is 60°-180°. Within this angle range, the arched edge can effectively limit the evaporation angle in more directions.

[0090] In some embodiments, the first arched edge 211 and the second arched edge 221 are connected at the same end in the first direction. The first arched edge 211 and the second arched edge 221 each have two extended ends in the first direction, which can be named the first extended end and the second extended end, respectively. The first arched edge 211 and the second arched edge 221 are connected at the first extended end, and the first arched edge 211 and the second arched edge 221 are connected at the second extended end. In this way, the first arched edge 211 and the second arched edge 221 can form a hole-like structure. In this way, only a hole needs to be drilled in a limiting plate, which facilitates processing. At the same time, the evaporation angle of the point source can be limited in 360° directions to make the evaporation material more concentrated and avoid material waste.

[0091] See also Figure 3 In some embodiments, the first limiting plate 21 is spaced from the second limiting plate 22. The spaced limiting plates can independently adjust the distance and angle between them and the point line source, thereby more flexibly controlling the angle range of the evaporated material. For different evaporation process requirements and the shape of the substrate 90, the positions of the two limiting plates can be adjusted separately to accurately optimize the evaporation angle, so that the evaporated material is more evenly distributed on the substrate 90. The spaced limiting plates are also more adaptable to point line sources of different types and layouts. If the arrangement or spacing of the point line sources changes, the propagation of the evaporated material can continue to be effectively restricted by appropriately adjusting the spacing distance and the position of the limiting plates. In addition, there is a certain gap between the spaced limiting plates, so that the evaporated material has more space to diffuse and be evenly distributed during the transmission process. In contrast, a structure connected in a hole shape may cause the evaporated material to accumulate at the orifice, affecting the uniform transmission of the material. The spaced limiting plates help reduce this accumulation phenomenon, allowing the material to reach the substrate 90 more smoothly and improve the uniformity of the coating. Secondly, when the two limiting plates are spaced apart, the vapor deposition material emitted from the point-line source can undergo a certain degree of scattering and mixing within the spaced-apart region, thereby achieving a more uniform distribution of the material before reaching substrate 90. This scattering and mixing can compensate for any potential unevenness in the material emitted from the point-line source, further improving the quality of the coating. However, the porous structure relatively limits the scattering space for the material, hindering its thorough mixing and uniform distribution.

[0092] See also Figure 2In some embodiments, the evaporation angle defined by the first arched edge 211 and the second arched edge 221 is between 30° and 60°. When the evaporation angle is too high, the evaporated material is scattered too much. When the evaporation angle is too low, the particles emitted by the evaporation source are emitted toward the substrate in a nearly horizontal direction. At this time, some raised parts or edge parts on the substrate will block the evaporated particles, preventing them from reaching certain areas of the substrate, thereby forming shadows in these blocked areas, resulting in a reduced deposition rate or even no deposition. When the evaporation angle is too low, the transmission path of the particles becomes longer and the probability of collision with gas molecules increases. This will cause the direction of movement of the particles to change, and some particles may not be able to accurately reach the corresponding positions on the substrate, but deviate to other areas, resulting in differences in the deposition rates at different positions on the substrate.

[0093] See also Figure 3 and Figure 4 In some embodiments, the heating chamber 10 includes at least three groups of evaporation chambers 11. Different materials can be placed in the three evaporation chambers 11, or the materials in the evaporation chambers 11 on both sides can be different from those in the center evaporation chamber 11. Evaporation is performed simultaneously during the scanning process, achieving precise co-evaporation of multiple materials. This allows for the formation of multi-layer structures in a single evaporation process, improving production efficiency and enabling precise control of the thickness and composition ratio of each layer. By properly setting the parameters of the three evaporation sources, such as the evaporation rate and angle, the evaporated material can be more evenly distributed on the substrate 90, reducing film thickness non-uniformity and improving the quality and consistency of the entire coating. Three evaporation sources provide greater flexibility in process adjustment. During the evaporation process, parameters such as the on / off state and the evaporation rate of each evaporation source can be individually controlled to accommodate different process requirements and product designs. In other embodiments, the evaporation chambers 11 may be arranged in four or more groups. The specific setting can be determined based on actual needs and is not limited here.

[0094] Optionally, the first limit plate 21 is located between two adjacent groups of evaporation chambers 11, the second limit plate 22 is located on both sides of the heating chamber 10 in the second direction, and the second limit plate 22 is located on the side of the first limit plate 21 away from the evaporation chamber 11 in the third direction, that is, the second limit plate 22 is higher than the first limit plate 21. It can be understood that a total of six limit plates are arranged above the three groups of evaporation chambers 11, that is, two limit plates are arranged above each group of evaporation chambers 11, wherein a first limit plate 21 is respectively arranged on both sides above the evaporation chamber 11 of the middle group, and a first limit plate 21 and a second limit plate 22 are respectively arranged on both sides above the two groups of evaporation chambers 11 on both sides. Among them, the second limit plates 22 above the two groups of evaporation chambers 11 on both sides are located on both sides of the entire heating chamber 10. The first limit plate 21 can limit the diffusion range of the evaporation material between adjacent point-line sources, avoid excessive crossover and overflow of the material between adjacent point-line sources, ensure that the evaporation material is mainly concentrated in the required area, and improve the precision and accuracy of the coating. The second limiting plate 22 is relatively high and can better define the edge of the entire evaporation formation area on the substrate 90. For the point-line sources at both ends, it can effectively prevent the evaporation material from diverging to unnecessary areas outside, making the edges of the evaporation formation area more neat, which is conducive to precise coating on substrates 90 of specific shapes and sizes. Limiting plates of different heights can guide the flow direction of the evaporation material. The first limiting plate 21 is relatively low, allowing a certain degree of mixing and uniform distribution of materials between adjacent point-line sources; the second limiting plate 22 is higher, which will prompt the materials of the point-line sources at both ends to converge more towards the inside of the evaporation area 101, reduce material loss at the edge, and thus make the material distribution in the entire evaporation area 101 more uniform.

[0095] Optionally, two first limit plates 21 are provided between two adjacent evaporation chambers 11, and the two first limit plates 21 are respectively used to limit the evaporation angles of the two adjacent evaporation chambers 11. In this way, limit plates are provided on both sides of each nozzle hole group, wherein the middle nozzle hole group is provided with first limit plates 21 on both sides, and the nozzle hole groups on both sides are provided with first limit plates 21 and second limit plates 22 on both sides, wherein the limit plates on the two sides of the heating chamber 10 in the second direction are the second limit plates 22. In this way, the limit plates between two adjacent nozzle hole groups will not affect the evaporation angle of the middle nozzle hole group.

[0096] Optionally, the farthest distance from each point on the first arched edge 211 to the nozzle array wiring is greater than the farthest distance from each point on the first arched edge 211 to the nozzle array wiring. In this way, the evaporation angle defined by the second limiting plate 22 at a greater distance can be similar to the evaporation angle defined by the second limiting plate 22 at a closer distance, thereby ensuring that the evaporation angles of each nozzle hole 12 in all directions on both sides are similar, thereby improving the uniformity of the evaporated material on the substrate 90.

[0097] See also Figure 5In some embodiments, the limiting mechanism 20 further includes a third limiting plate 23 and a fourth limiting plate 24. The third limiting plate 23 is located on a side of the first limiting plate 21 away from the heating chamber 10 and is spaced apart from the first limiting plate 21. The fourth limiting plate 24 is located on a side of the second limiting plate 22 away from the heating chamber 10 and is spaced apart from the second limiting plate 22. The third limiting plate 23 and the fourth limiting plate 24 are arranged along the second direction, and the third limiting plate 23 and the fourth limiting plate 24 at least partially avoid the nozzle hole 12 in the third direction. In other words, the third limiting plate 23 is located above the first limiting plate 21, and the fourth limiting plate 24 is located above the second limiting plate 22. The first limiting plate 21 and the second limiting plate 22 can initially limit the angle of the vapor deposition material emitted from the point-line source at a short distance, while the third limiting plate 23 and the fourth limiting plate 24 can perform secondary angle limitation on the vapor deposition material after it has traveled a certain propagation distance. Because the wavy edges of varying heights have varying blocking and reflection effects on the deposited material, the deposited material is precisely constrained at different angles at each stage, ultimately achieving a more precise angular distribution on the substrate 90 and improving the positional accuracy of the coating. The upper and lower limit plates on the same side can each define a different deposition range.

[0098] Optionally, the edge of the third limiting plate 23 facing the fourth limiting plate 24 includes at least one third arched edge, the arch of the third arched edge is facing away from the fourth limiting plate 24, and the edge of the fourth limiting plate 24 facing the third limiting plate 23 includes at least one fourth arched edge, the arch of the fourth arched edge is facing away from the first limiting plate 21; the third arched edge and the first arched edge 211 jointly limit the evaporation angle on the same side of the airflow ejected from the nozzle hole 12, and the fourth arched edge and the second arched edge 221 jointly limit the evaporation angle on the same side of the airflow ejected from the nozzle hole 12. The first limiting plate 21 and the second limiting plate 22 limit the divergence range of the evaporation material near the point line source to prevent excessive scattering of the material; the third limiting plate 23 and the fourth limiting plate 24 further limit the propagation boundary of the evaporation material at a farther distance, ensuring that the evaporation material is concentrated in the target substrate 90 area, reducing the deposition of material in non-target areas, improving the utilization rate of the material and the accuracy of the coating, and can also readjust the remaining evaporation material after passing through the first limiting plate 21 and the second limiting plate 22, supplementing and correcting the distribution of the evaporation material on the substrate 90, thereby achieving a more uniform distribution of the evaporation material on the entire substrate 90 and reducing the unevenness of the film thickness. In addition, the presence of the two limiting plates can interfere with and adjust the airflow in the evaporation chamber 11 at different positions, thereby improving the uniformity of evaporation.

[0099] See also Figure 2 and Figure 6In some embodiments, the evaporation source further includes a rotating mechanism 30 disposed within the evaporation chamber 11 and capable of rotating about a rotation axis. The rotating mechanism 30 is provided with multiple placement areas 301 surrounding the rotation axis, each for placing the evaporation material. The evaporation chamber 11 includes an evaporation area 101, and at least a portion of the rotating mechanism 30 is located within the evaporation area 101. The heating chamber 10 is capable of heating the placement areas 301 that are rotated to the evaporation area 101. Heating only specific placement areas 301 avoids the energy waste associated with heating all placement areas 301 simultaneously. As the rotating mechanism 30 rotates, the heating chamber 10 can concentrate energy on heating the material currently being evaporated, enabling more efficient conversion of energy into the heat required for the evaporation material. This improves energy utilization and reduces energy costs. Because all placement areas 301 are not heated continuously, the operating time and load of the heating chamber 10 are reduced. This helps reduce wear and aging of the heating device, extending its service life and reducing equipment maintenance and replacement costs. At the same time, for the rotating mechanism 30 and other related components, since long-term high-temperature environment is avoided, the risks of thermal deformation and material performance degradation are reduced, thereby improving the stability and reliability of the entire equipment.

[0100] See also Figure 7 In some embodiments, the evaporation chamber 11 includes a heating housing 111, a crucible 112, and a heating element 113. The crucible 112 forms a heating chamber 1120, in which the evaporation material can be placed. The heating housing 111 encloses at least a portion of the crucible 112. The heating element 113 is located in the gap between the heating housing 111 and the crucible 112. The heating element heats the portion of the crucible near the nozzle hole at a higher temperature than the portion of the crucible away from the nozzle hole. That is, the heating element can cause the upper portion of the heating chamber 1120 near the nozzle hole to have a higher temperature, while the lower portion away from the nozzle hole to have a lower temperature. During the evaporation process, the evaporation material near the nozzle needs to quickly reach a higher temperature to achieve good evaporation and spraying effects. The relatively lower temperature of the portion away from the nozzle prevents over-evaporation or unnecessary chemical reactions of the evaporation material before it reaches the nozzle, while also reducing heat loss and improving heating efficiency.

[0101] Among them, the heating body 113 may optionally include a heating wire, which is wound around the crucible, and the density of the heating wire near the nozzle hole is greater than the density of the part away from the nozzle hole. The heating temperature of the heating body is positively correlated with the winding density of the heating wire. Therefore, the density of the heating wire near the nozzle hole (i.e., the upper half of the crucible) is larger, so the heating temperature near the nozzle hole is higher, and the density of the heating wire away from the nozzle hole (i.e., the lower half of the crucible) is smaller, so the heating temperature away from the nozzle hole is lower. A higher heating wire density can generate more heat, so that the temperature near the nozzle area rises rapidly and remains within a suitable range, accurately meeting the evaporation requirements of the evaporation material, and can also enable the evaporation material to be fully and evenly evaporated before being ejected from the nozzle, forming a uniform vapor flow, thereby depositing a uniform thin film on the substrate 90, improving the uniformity and quality of the coating. The heating wire is wrapped around the crucible to heat the crucible, which can make the temperature of the crucible gradually uniform, and form a reasonable temperature gradient from the nozzle hole to the bottom of the heating chamber 1120 in the heating chamber 1120. Proper temperature distribution also helps reduce the incorporation of impurities into the deposition material due to localized overheating or overcooling, ensuring the purity of the deposition material and thereby improving the quality and performance of the coating. The lower density and relatively mild temperature of the heating filaments in the area away from the nozzle slows down the aging of components within the heating chamber 10, reduces material deformation and embrittlement caused by high temperatures, and extends the service life of the heating chamber 10 and its associated components.

[0102] See also Figure 8 and Figure 9 The embodiment of the present application further provides an evaporation source, including a heating chamber 40 and a limiting mechanism 50. The limiting mechanism 5020 can be connected to the heating chamber 40, can be connected to other structural components, or can be independently provided, which is not limited here.

[0103] The heating chamber 40 may be provided with a heating chamber 1120 for placing the evaporation material. There may be one or more heating chambers 1120. The heating chamber 40 includes at least one group of nozzle holes 401. Each heating chamber 1120 may be connected to at least one group of nozzle holes 401 and emit evaporated evaporation material through the nozzle holes 401. Each heating chamber 1120 may contain the same evaporation material or different evaporation materials. Multiple heating chambers 1120 may achieve evaporation of multiple evaporation materials. Multiple heating chambers 1120 may simultaneously emit evaporated evaporation material through corresponding groups of nozzle holes 401 to perform parallel evaporation on different substrates 90 or different areas of the same substrate 90. Compared to a single heating chamber 1120 emitting material one by one through corresponding groups of nozzle holes 401, the coating output per unit time is greatly improved, and evaporation of a large number of substrates 90 can be completed in a shorter time, meeting the needs of large-scale production.

[0104] Each nozzle hole 401 group includes at least one nozzle hole 401, and the nozzle hole 401 is used to eject gaseous evaporation material. When there are multiple groups of nozzle holes 401 and each nozzle hole group 401 includes multiple nozzle holes 401, the multiple nozzle holes 401 in each nozzle hole group 401 extend along the first direction, and the multiple nozzle hole groups 401 are arranged at intervals along the second direction, which is perpendicular to the first direction; the ejection direction of the nozzle hole 401 is the third direction, which is perpendicular to the first direction and the second direction. Figure 2 In the embodiment, the third direction is the up-down direction, the first direction is the front-back direction, and the second direction is the left-right direction. The cross section of the nozzle hole 401 can be strip-shaped or non-strip-shaped. When the cross section of the nozzle hole 401 is strip-shaped and has a long length, the evaporation source is an evaporation line source. When the cross section of the nozzle hole 401 is strip-shaped but has a short length (such as a rectangle), or the cross section of the nozzle hole 401 is non-strip-shaped (such as a circle, an ellipse, a polygon, etc.), the evaporation source is a point source (each heating chamber 1120 is connected to one nozzle hole 401) or a point-line source (each heating chamber 1120 is connected to multiple nozzle holes 401, and the multiple nozzle holes 401 are arranged in a row along the first direction).

[0105] The limiting mechanism 50 is located in the direction of the nozzle hole 401. The limiting mechanism 50 forms a limiting gap 501. The limiting gap 501 is used to allow the airflow ejected from the nozzle hole 401 to pass through and limit the evaporation angle of the airflow. The limiting gap 501 can include at least one porous structure, in which case the porous structure is circumferentially sealed, or it can be a gap between two independent and spaced-apart structural members. In this case, the limiting gap 501 is provided with notches on both sides of the opposite sides in the first direction. The limiting mechanism 50 can be composed of one or more plate-like structures or a frame-like structure. The limiting mechanism 50 can also be connected to a driving structure for driving the limiting mechanism 50 to move. The driving structure can change the position or size of the limiting gap 501.

[0106] The limiting gap 501 has a first edge 51 and a second edge 52 in the second direction. The first edge 51 and the second edge 52 are spaced apart and may also be partially connected. The first edge 51 has at least one first arched portion 511, the center of which protrudes away from the nozzle hole 401. The second edge 52 has at least one second arched portion 521, the center of which protrudes away from the nozzle hole 401. The cross-sectional shapes of the first arched portion 511 and the second arched portion 521 include, but are not limited to, a curve, an arc, a broken line, or a combination of a curve and a broken line, as long as the center of the first arched portion is further away from the nozzle hole 401 than the ends in the first direction. In other embodiments, only the first edge 51 may have at least one first arched portion 511, while the second edge 52 extends in a straight line, or only the second edge 52 may have at least one second arched portion 521, while the first edge 51 extends in a straight line. This is not a limitation here.

[0107] At least a portion of the first edge 51 is located in the second direction of the corresponding nozzle hole 401, and at least a portion of the second edge 52 is located in the opposite direction of the second direction of the corresponding nozzle hole 401. Figure 2 In the embodiment, the first edge 51 is at least partially located to the left of the nozzle hole 401, and the second edge 52 is at least partially located to the right of the nozzle hole 401. The first edge 51 and the second edge 52 are used together to limit the evaporation angle of the gaseous evaporation material emitted by the corresponding nozzle hole 401. The evaporation angle refers to the angle between the direction of movement of the evaporation material after it is emitted from the evaporation source and the normal line of the substrate 90 surface when it reaches the surface of the substrate 90.

[0108] The evaporation source comprises an evaporation mechanism with a limited gap 501, wherein the first edge 51 of the limited gap 501 comprises a first arched portion 511, and the second edge 52 comprises a second arched portion 521. Compared to an evaporation source in which both the first edge 51 and the second edge 52 of the limited gap 501 are straight edges, the first arched portion 511 and the second arched portion 521 can partially block the evaporation material. As the evaporation material emerges from the evaporation source, it is blocked by the two extended ends of the first arched portion 511 and the second arched portion 521, changing its original trajectory. This allows only the unobstructed evaporation material within the specific angular range defined by the first arched portion 511 and the second arched portion 521 to reach the substrate 90. This partial blocking effect effectively limits the evaporation angle, reduces the distribution of the evaporation material in unnecessary directions, and facilitates precise control of the evaporation area and angle. This not only maintains the process capability of conventional evaporation sources but also reduces leakage of highly conductive materials.

[0109] Optionally, the limiting mechanism 50 includes a first limiting plate 50a and a second limiting plate 50b, the first edge 51 is the edge of the first limiting plate 50a close to the second limiting plate 50b, and the second edge 52 is the edge of the second limiting plate 50b close to the first limiting plate 50a.

[0110] It should be noted that the first edge 51 and the second edge 52 can be formed by a linear structure or a planar structure. Correspondingly, when the first edge 51 and the second edge 52 are linear structures, the limiting gap 501 is an angular structure at the first edge 51 and the second edge 52. When the first edge 51 and the second edge 52 are planar structures, the limiting gap 501 is a wall structure at the first edge 51 and the second edge 52.

[0111] See also Figure 8 and Figure 9 In some embodiments, the orthographic projection of the limiting mechanism 50 in the third direction does not overlap with the orthographic projection of the nozzle hole 401 in the third direction, meaning that the limiting mechanism 50 at least partially avoids the nozzle hole 401. It will be appreciated that in the vertical direction, the nozzle hole 401 may be entirely or only partially located within the limiting gap 501. In this way, the vapor deposition material ejected from the nozzle hole 401 can be at least partially ejected in the vertical direction toward the substrate 90, ensuring that the deposition rate of the vapor deposition material on the substrate 90 meets the required rate.

[0112] See also Figure 8 and Figure 9In some embodiments, the first edge 51 has multiple first arched portions 511, and the second edge 52 has multiple second arched portions 521. Thus, both the first edge 51 and the second edge 52 are generally wavy. Compared to straight edges, wavy edges can define multiple specific areas on the substrate 90, thereby limiting the evaporation angle in these specific areas. The wavy edges allow the evaporation material to exit the line source at different positions and angles during the evaporation process, increasing the randomness and uniformity of the evaporation material distribution. Compared to straight edges, wavy edges allow the evaporation material to be more evenly scattered onto the substrate 90, reducing film thickness non-uniformity and improving the consistency of the film deposited across the entire surface of the substrate 90. Furthermore, during the evaporation process, a conventional straight edge of the limiting gap 501 may create shadow areas near the line source, resulting in less evaporation material deposition in these areas. However, wavy edges break up this regular shadow distribution, allowing the evaporation material to more effectively cover these shadow areas, improving the evaporation coverage rate and reducing film defects caused by shadow effects. In addition, the wavy edge helps to change the airflow distribution near the evaporation source. When the evaporation material is evaporated, the surrounding airflow will affect its transmission and distribution. The wavy edge can disrupt the airflow, making the airflow more turbulent and uniform, thereby driving the evaporation material to diffuse more evenly onto the substrate 90, further improving the uniformity of evaporation. Secondly, at the edge of the evaporated film, due to the different scattering and deposition methods of the evaporation material, it is easy for the film thickness or performance at the edge to be inconsistent with that in the central area, that is, the edge effect. The wavy first edge 51 and the second edge 52 can make the distribution of the evaporation material limited by the edge portion of the limiting gap 501 smoother, reduce the edge effect, and make the performance of the film more stable and consistent on the entire substrate 90.

[0113] The first arched portion 511 and the second arched portion 521 are disposed opposite each other in the second direction, and both extend along the circumference of the same nozzle hole 401. Thus, the first arched portion 511 and the second arched portion 521 can be used together to limit the circumferential deposition angle of the vapor deposition material ejected from the same nozzle hole 401. The area defined by the first arched portion 511 and the second arched portion 521 on the substrate 90 can be concentrated in a specific region, thereby improving the accuracy of controlling the deposition area on the substrate 90 and further reducing material deposition in non-specific regions.

[0114] It should be noted that other technical features in this embodiment are similar to those of the evaporation source provided in the previous embodiment, and their functions are also similar, so they will not be described in detail here.

[0115] The foregoing descriptions are merely specific embodiments of the present invention and describe only the technical principles of the present invention. These descriptions are intended solely to explain the principles of the present invention and should not be construed in any way as limiting the scope of protection of the present invention. Based on the explanations herein, any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention, as well as other specific embodiments of the present invention that can be devised by those skilled in the art without inventive effort, shall be included within the scope of protection of the present invention.

Claims

1. A vapor deposition source, characterized in that: include: The heating chamber includes at least one group of evaporation chambers, each group of the evaporation chambers extending along a first direction. When multiple groups of the evaporation chambers are provided, the multiple groups of the evaporation chambers are spaced apart along a second direction, the second direction being perpendicular to the first direction. The evaporation chamber has at least one nozzle hole, the emission direction of the nozzle hole is a third direction, the third direction being perpendicular to the first direction and the second direction. The limiting mechanism is located in the exit direction of the nozzle hole, and the limiting mechanism includes a first limiting plate and a second limiting plate. The first limiting plate and the second limiting plate are arranged along the second direction. The orthographic projections of the first limiting plate and the second limiting plate in the third direction do not overlap with the orthographic projection of the nozzle hole in the third direction. The edge of the first limiting plate facing the second limiting plate includes at least one first arched edge, and the arch bulge of the first arched edge faces away from the second limiting plate. The edge of the second limiting plate facing the first limiting plate includes at least one second arched edge, and the arch bulge of the second arched edge faces away from the first limiting plate.

2. The evaporation source according to claim 1, wherein The first arched edge and the second arched edge are arranged opposite to each other in the second direction; Preferably, the width of the first arched edge in the first direction is equal to the width of the second arched edge in the first direction.

3. The evaporation source according to claim 2, wherein A restriction area is formed between the first arched edge and the corresponding second arched edge, and one nozzle hole is provided in each restriction area.

4. The evaporation source according to claim 1, wherein The cross-sectional shape of the nozzle hole includes a circle, an ellipse or a regular polygon; Preferably, the cross-sectional shape of the nozzle hole is circular.

5. The evaporation source according to claim 1, wherein Each group of the evaporation chambers is provided with a plurality of nozzle holes, and the plurality of nozzle holes are arranged at intervals along a nozzle array wiring, and the nozzle array wiring extends along the first direction.

6. The evaporation source according to claim 1, wherein The edge of the first limiting plate facing the second limiting plate includes a plurality of first arched edges, and the plurality of first arched edges are arranged in sequence along the first direction, and / or the edge of the second limiting plate facing the first limiting plate includes a plurality of second arched edges, and the plurality of second arched edges are arranged in sequence along the first direction, and the first arched edges correspond one-to-one to the second arched edges.

7. The evaporation source according to claim 1, wherein At least one of the first arched edge and the second arched edge includes a curved surface, and a central angle corresponding to the curved surface is 60°-180°.

8. The evaporation source according to claim 1, wherein The first arched edge and the second arched edge are connected to ends on the same side in the first direction.

9. The evaporation source according to claim 1, wherein The first limiting plate is spaced apart from the second limiting plate.

10. The evaporation source according to claim 9, wherein The heating chamber includes at least three groups of the evaporation chambers, the first limiting plate is located between two adjacent groups of the evaporation chambers, the second limiting plates are located on both sides of the heating chamber in the second direction, and the second limiting plates are located on the side of the first limiting plate away from the evaporation chamber in the third direction; Preferably, two first limiting plates are provided between two adjacent evaporation chambers, and the two first limiting plates are respectively used to limit the evaporation angles of the two adjacent evaporation chambers.

11. The evaporation source according to claim 10, wherein Each group of the evaporation chambers is provided with a plurality of nozzle holes, and the plurality of nozzle holes are arranged at intervals along the nozzle row wiring. The nozzle row wiring extends along the first direction, and the farthest distance from each point on the second arch edge to the nozzle row wiring is greater than the farthest distance from each point on the first arch edge to the nozzle row wiring.

12. The evaporation source according to claim 1, wherein The limiting mechanism also includes a third limiting plate and a fourth limiting plate. The third limiting plate is located on a side of the first limiting plate away from the heating chamber and is spaced apart from the first limiting plate. The fourth limiting plate is located on a side of the second limiting plate away from the heating chamber and is spaced apart from the second limiting plate. The third limiting plate and the fourth limiting plate are arranged along the second direction, and the third limiting plate and the fourth limiting plate at least partially avoid the nozzle hole in the third direction.

13. The evaporation source according to claim 12, wherein The edge of the third limiting plate facing the fourth limiting plate includes at least one third arched edge, the arch of the third arched edge is facing away from the fourth limiting plate, and the edge of the fourth limiting plate facing the third limiting plate includes at least one fourth arched edge, the arch of the fourth arched edge is facing away from the first limiting plate; the third arched edge and the first arched edge jointly limit the evaporation angle on the same side of the airflow ejected from the nozzle hole, and the fourth arched edge and the second arched edge jointly limit the evaporation angle on the same side of the airflow ejected from the nozzle hole.

14. The evaporation source according to claim 1, wherein The evaporation source also includes a rotating mechanism, which is arranged in the evaporation chamber and can rotate around a rotation axis. The rotating mechanism is provided with a plurality of placement areas surrounding the rotation axis, each of which is used to place evaporation materials. The evaporation chamber has an evaporation area, and at least part of the rotating mechanism is located in the evaporation area. The heating chamber can heat the placement area that rotates to the evaporation area.

15. The evaporation source according to claim 1, wherein The evaporation chamber includes a heating shell, a crucible and a heating body. The heating shell wraps at least a portion of the crucible. The heating body is located in a gap between the heating shell and the crucible. The heating temperature of the portion of the crucible close to the nozzle hole is higher than the heating temperature of the portion of the crucible far from the nozzle hole.

16. The evaporation source according to claim 15, wherein The heating body includes a heating wire wound around the crucible, and the density of the heating wire near the nozzle hole is greater than the density of the heating wire far from the nozzle hole.

17. A vapor deposition source, characterized in that: include: The heating chamber includes at least one nozzle hole group, each of the nozzle hole groups includes at least one nozzle hole. When the nozzle hole groups are provided in a plurality of groups and each of the nozzle hole groups includes a plurality of the nozzle holes, the plurality of nozzle holes in each of the nozzle hole groups extend along a first direction, and the plurality of nozzle hole groups are arranged at intervals along a second direction, the second direction being perpendicular to the first direction; and the nozzle holes have an emission direction that is a third direction that is perpendicular to the first direction and the second direction. A limiting mechanism is located in the exit direction of the nozzle hole, and the limiting mechanism forms a limiting gap. The limiting gap is used for allowing the airflow ejected from the nozzle hole to pass through and limiting the evaporation angle of the airflow. The limiting gap has a first edge and a second edge in the second direction; the first edge has at least one first arched portion, and the middle part of the first arched portion protrudes in the direction away from the nozzle hole, and / or the second edge has at least one second arched portion, and the middle part of the second arched portion protrudes in the direction away from the nozzle hole.

18. The evaporation source according to claim 17, wherein The orthographic projection of the limiting mechanism in the third direction does not overlap with the orthographic projection of the nozzle hole in the third direction.

19. The evaporation source according to claim 17, wherein The first edge has a plurality of first arched portions, the second edge has a plurality of second arched portions, the first arched portions and the second arched portions are arranged opposite to each other in the second direction, and the oppositely arranged first arched portions and second arched portions are both extended along the circumference of the same nozzle hole.

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