Three-waveband anti-counterfeit label

Abstract

The invention discloses a three-wave-band anti-counterfeit label which is a visible light, medium-wave infrared and long-wave infrared three-wave-band anti-counterfeit label adopting a multi-layer film photon structure. The anti-counterfeit label is divided into four areas according to the section structure. Wherein the visible light information imaging area of the label is realized by controlling the visible light reflectivity of the area, and the medium-wave infrared information imaging and the long-wave infrared information imaging are respectively realized by controlling the infrared emissivity of the respective imaging area; the visible light reflectivity of the visible light imaging area can be changed according to color requirements; the color of visible light in the uniform color background area, the medium-wave infrared imaging area and the long-wave infrared imaging area is consistent. The defect that a traditional anti-counterfeit label only carries out anti-counterfeit on information in a single wave band is effectively overcome, and meanwhile the label is expected to be prepared on a large scale through the prior art.

Description

Technical Field

[0001] The invention relates to a three-band anti-counterfeiting label, belonging to the technical field of encrypted anti-counterfeiting labels. Background Art

[0002] Counterfeit and substandard goods cause enormous economic losses, particularly in the pharmaceutical and food industries, and pose a serious threat to human life and safety. This highlights the critical importance of anti-counterfeiting technology in protecting public health and promoting technological innovation.

[0003] Most commercial anti-counterfeiting labels are manufactured using standardized production processes, resulting in high predictability. Emerging photochromic anti-counterfeiting labels are gaining widespread adoption due to their intuitiveness, sensitivity, and ease of production. However, these labels, which rely solely on visible light imaging, have limited encryption capabilities and cannot meet the growing demand for anti-counterfeiting.

[0004] Currently, multi-band anti-counterfeiting labels can only work in the visible light and long-wave infrared bands. However, with the development of multi-band imaging technology, multispectral cameras that collect visible light and long-wave infrared images at the same time have posed a threat to dual-band anti-counterfeiting technology.

[0005] Therefore, those skilled in the art are in urgent need of solving the problems of the existing anti-counterfeiting labels, such as single anti-counterfeiting method, easy duplication and high risk. Summary of the Invention

[0006] Purpose: To overcome the deficiencies in the prior art, the present invention provides a three-band anti-counterfeiting label that can simultaneously utilize visible light, mid-wave infrared, and long-wave infrared for anti-counterfeiting purposes, which is expected to further improve anti-counterfeiting capabilities.

[0007] Technical solution: To solve the above technical problems, the technical solution adopted by the present invention is: A three-band anti-counterfeiting label comprises: a substrate, a metal reflective layer, a uniform color background area, a visible light imaging area, a medium-wave infrared imaging area and a long-wave infrared imaging area.

[0008] A metal reflective layer is provided on the substrate, and a uniform color background area, a visible light imaging area, a medium-wave infrared imaging area and a long-wave infrared imaging area are respectively provided on the metal reflective layer.

[0009] Among them, the difference in average visible light reflectivity between the uniform color background area and the medium-wave infrared imaging area or the long-wave infrared imaging area is less than 0.05.

[0010] The difference in average visible light reflectivity between the visible light imaging area and the uniform color background area, the medium-wave infrared imaging area or the long-wave infrared imaging area is greater than 0.2.

[0011] The average medium-wave infrared emissivity in the medium-wave infrared imaging area is above 0.7, and the average long-wave infrared emissivity is below 0.3.

[0012] The average long-wave infrared emissivity in the long-wave infrared imaging area is above 0.7, and the average medium-wave infrared emissivity is below 0.3.

[0013] The uniform color background area, the visible light imaging area, the medium-wave infrared imaging area, and the long-wave infrared imaging area are respectively set as patterns containing information.

[0014] Optionally, the uniform color background area includes: a first impedance matching layer that is transparent in the mid-infrared band and has a thickness ranging from 100 to 700 nanometers.

[0015] Optionally, the visible light imaging region includes: a structural color layer transparent in the mid-infrared band and not completely transparent in the visible light band, with a thickness ranging from 10 to 200 nanometers, and a second impedance matching layer transparent in the mid-infrared band, with a thickness ranging from 100 to 700 nanometers. The structural color layer is disposed on the second impedance matching layer.

[0016] Optionally, the mid-wave infrared imaging region includes: a third impedance matching layer transparent in the mid-infrared band, having a thickness ranging from 200 to 500 nanometers; a first ultrathin metal layer highly reflective in the mid-infrared band, having a thickness ranging from 5 to 20 nanometers; a first lossless dielectric layer transparent in the mid-infrared band, having a thickness ranging from 300 to 600 nanometers; a first ultrathin metal layer disposed on the first lossless dielectric layer, and a third impedance matching layer disposed on the first ultrathin metal layer.

[0017] Optionally, the long-wave infrared imaging region includes: a fourth impedance matching layer transparent in the mid-infrared band, having a thickness ranging from 200 to 500 nanometers; a second ultrathin metal layer highly reflective in the mid-infrared band, having a thickness ranging from 10 to 70 nanometers; a second lossless dielectric layer transparent in the mid-infrared band, having a thickness ranging from 300 to 700 nanometers; a second ultrathin metal layer disposed on the second lossless dielectric layer, and a fourth impedance matching layer disposed on the second ultrathin metal layer.

[0018] Optionally, the substrate is made of one of silicon wafer, white glass, quartz, sapphire, polyimide, polyethylene terephthalate, polyethylene, nylon fabric, and non-woven fabric.

[0019] Optionally, the first lossless dielectric layer and the second lossless dielectric layer are made of one of silicon, germanium, zinc sulfide, zinc selenide, barium fluoride, calcium fluoride, and hafnium oxide.

[0020] Optionally, the first impedance matching layer, the second impedance matching layer, the third impedance matching layer, and the fourth impedance matching layer are made of one of silicon, germanium, zinc sulfide, and zinc selenide.

[0021] Optionally, the structural color layer is made of one of silicon, germanium, zinc sulfide, zinc selenide, barium fluoride, calcium fluoride, hafnium oxide, titanium dioxide, and silicon dioxide.

[0022] Optionally, the metal reflective layer is made of one of gold, silver, aluminum, copper, nickel, chromium, titanium, indium tin oxide, and aluminum-doped zinc oxide.

[0023] Optionally, the first ultra-thin metal layer and the second ultra-thin metal layer are made of one of gold, silver, aluminum, copper, nickel, chromium, titanium, indium tin oxide, and aluminum-doped zinc oxide.

[0024] Beneficial effects: The present invention provides a three-band anti-counterfeiting label, which adopts a three-band anti-counterfeiting label of visible light, medium-wave infrared and long-wave infrared with a multi-layer thin film photonic structure. The anti-counterfeiting label is divided into four areas according to the cross-sectional structure. Among them, the visible light information imaging area of ​​the label is realized by controlling the visible light reflectivity of the area, and the medium-wave infrared and long-wave infrared information imaging are respectively realized by controlling the infrared emissivity of their respective imaging areas; it satisfies the following requirements: the visible light reflectivity of the visible light imaging area can be changed according to color requirements; the visible light color of the uniform color background area, medium-wave infrared and long-wave infrared imaging areas is consistent; the medium-wave and long-wave emissivities of the uniform color background area and the visible light imaging area are both less than 0.3; the medium-wave infrared emissivity of the medium-wave infrared imaging area is above 0.7, and the long-wave infrared emissivity is less than 0.3; the long-wave infrared emissivity of the long-wave infrared imaging area is above 0.7, and the medium-wave infrared emissivity is less than 0.3; the label effectively solves the shortcomings of traditional anti-counterfeiting labels that only anti-counterfeit information in a single band, and the label is expected to be mass-produced through existing technology.

[0025] Compared with the prior art, the advantages of the present invention are as follows: (1) In order to solve the problem of high predictability of existing single-band anti-counterfeiting labels, the present invention expands the encryption band of anti-counterfeiting labels to three bands: visible light, medium-wave infrared and long-wave infrared, which has the advantages of strong anti-counterfeiting ability and low predictability.

[0026] (2) To address the problem that the hidden information of existing dual-band information anti-counterfeiting labels is easily visible under visible light, leading to information leakage, the present invention can ensure that the designed nanoscale structure can ensure that the medium-wave infrared and long-wave infrared information are completely invisible under visible light.

[0027] (3) The present invention has the advantages of strong anti-counterfeiting ability, low predictability, difficulty in replication and large-scale preparation, and is expected to be industrialized.

[0028] (4) The present invention can simultaneously encode information to be protected against counterfeiting in three wavelength bands: visible light, mid-wave infrared, and long-wave infrared, effectively improving anti-counterfeiting capabilities. This provides a new product for advanced anti-counterfeiting technology, and the technology and application have potential economic value and social benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 The figure is a schematic structural diagram of an embodiment of a three-band anti-counterfeiting label of the present invention.

[0030] Figure 2 It is a cross-sectional schematic diagram of the uniform background area of ​​the present invention.

[0031] Figure 3 Schematic cross-sectional view of the visible light imaging area of ​​the present invention.

[0032] Figure 4 It is a cross-sectional schematic diagram of the medium-wave infrared imaging area of ​​the present invention.

[0033] Figure 5 It is a cross-sectional schematic diagram of the long-wave infrared imaging area of ​​the present invention.

[0034] Figure 6 (a) shows the visible light reflectivity of different areas of the tested three-band anti-counterfeiting QR code label. Figure 6 (b) shows the mid-infrared emissivity of different areas of the tested three-band anti-counterfeiting QR code.

[0035] Figure 7 These are the visible light, medium-wave infrared, and long-wave infrared images of a three-band anti-counterfeiting QR code label, as well as the complete QR code image obtained after stitching. DETAILED DESCRIPTION

[0036] The following is a clear and complete description of the technical solutions in the examples of the present invention, in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative work are within the scope of protection of the present invention.

[0037] The present invention will be further described below with reference to specific embodiments.

[0038] Example 1:

[0039] This embodiment introduces a three-band anti-counterfeiting label, such as Figure 1 As shown, it includes: a substrate 1, a metal reflective layer 2, a uniform color background area 3, a visible light imaging area 4, a medium-wave infrared imaging area 5 and a long-wave infrared imaging area 6.

[0040] A metal reflective layer 2 is provided on the substrate 1, and a uniform color background area 3, a visible light imaging area 4, a medium-wave infrared imaging area 5, and a long-wave infrared imaging area 6 are provided on the metal reflective layer 2. The visible light reflectivity and infrared emissivity of the above four areas meet the following requirements: The difference in average visible light reflectivity between the uniform color background area 3 and the medium-wave infrared imaging area 5 or the long-wave infrared imaging area 6 is less than 0.05.

[0041] The difference in average visible light reflectivity between the visible light imaging area 4 and the uniform color background area 3 , the medium-wave infrared imaging area 5 or the long-wave infrared imaging area 6 is greater than 0.2.

[0042] The average medium-wave infrared emissivity of the medium-wave infrared imaging area 5 is greater than 0.7, and the average long-wave infrared emissivity is less than 0.3.

[0043] The long-wave infrared imaging area 6 has an average long-wave infrared emissivity greater than 0.7 and an average medium-wave infrared emissivity less than 0.3.

[0044] The uniform color background area 3, the visible light imaging area 4, the medium wave infrared imaging area 5 and the long wave infrared imaging area 6 are respectively set to patterns containing information.

[0045] Furthermore, in one embodiment, the substrate is made of one of silicon wafer, white glass, quartz, sapphire, polyimide, polyethylene terephthalate, polyethylene, nylon fabric, and non-woven fabric.

[0046] Furthermore, an embodiment, such as Figure 2 As shown, the uniform color background area 3 includes: a first impedance matching layer 301 transparent in the mid-infrared band, with a thickness ranging from 100 to 700 nanometers.

[0047] Furthermore, an embodiment, such as Figure 3 As shown, the visible light imaging region 4 includes a structural color layer 401 that is transparent in the mid-infrared band and not completely transparent in the visible light band, with a thickness ranging from 10 to 200 nanometers, and a second impedance matching layer 402 that is transparent in the mid-infrared band and has a thickness ranging from 100 to 700 nanometers. The structural color layer 401 is disposed on the second impedance matching layer 402.

[0048] Furthermore, an embodiment, such as Figure 4As shown, the mid-wave infrared imaging region 5 includes: a third impedance matching layer 501 transparent in the mid-infrared band, with a thickness ranging from 200 to 500 nanometers; a first ultra-thin metal layer 502 highly reflective in the mid-infrared band, with a thickness ranging from 5 to 20 nanometers; and a first lossless dielectric layer 503 transparent in the mid-infrared band, with a thickness ranging from 300 to 600 nanometers. The first ultra-thin metal layer 502 is disposed on the first lossless dielectric layer 503, and the third impedance matching layer 501 is disposed on the first ultra-thin metal layer 502.

[0049] Furthermore, an embodiment, such as Figure 5 As shown, the long-wave infrared imaging region 6 includes: a fourth impedance matching layer 601 transparent in the mid-infrared band, with a thickness ranging from 200 to 500 nanometers; a second ultra-thin metal layer 602 highly reflective in the mid-infrared band, with a thickness ranging from 10 to 70 nanometers; and a second lossless dielectric layer 603 transparent in the mid-infrared band, with a thickness ranging from 300 to 700 nanometers. A second ultra-thin metal layer 602 is disposed on the second lossless dielectric layer 603, and a fourth impedance matching layer 601 is disposed on the second ultra-thin metal layer 602.

[0050] Furthermore, the first lossless dielectric layer and the second lossless dielectric layer are made of one of silicon, germanium, zinc sulfide, zinc selenide, barium fluoride, calcium fluoride, and hafnium oxide.

[0051] Furthermore, the first impedance matching layer, the second impedance matching layer, the third impedance matching layer, and the fourth impedance matching layer are made of one of silicon, germanium, zinc sulfide, and zinc selenide.

[0052] Furthermore, the structural color layer is made of one of silicon, germanium, zinc sulfide, zinc selenide, barium fluoride, calcium fluoride, hafnium oxide, titanium dioxide, and silicon dioxide.

[0053] Furthermore, the metal reflective layer is made of one of gold, silver, aluminum, copper, nickel, chromium, titanium, indium tin oxide, and aluminum-doped zinc oxide.

[0054] Furthermore, the first ultra-thin metal layer and the second ultra-thin metal layer are made of one of gold, silver, aluminum, copper, nickel, chromium, titanium, indium tin oxide, and aluminum-doped zinc oxide.

[0055] Example 2:

[0056] This embodiment introduces a preparation process of a three-band anti-counterfeiting label, in which the label takes a QR code pattern as an example. During the preparation process, masks with different hole structures are used, and a magnetron sputtering process is adopted to deposit patterns corresponding to different parts of the QR code in the uniform color background area, visible light imaging area, medium-wave infrared imaging area and long-wave infrared imaging area respectively.

[0057] In this embodiment, the middle part, upper part and lower part of the QR code are encrypted to the visible light imaging area, medium-wave infrared imaging area and long-wave infrared imaging area respectively. In this embodiment, the substrate is selected as a 4-inch diameter silicon wafer with a thickness of 0.5 mm. Before preparation, the silicon wafer is ultrasonically cleaned with acetone, ethanol and deionized water for 15 minutes and blown dry with nitrogen; the structure of the uniform color background area in this embodiment is 200 nanometers of germanium and 100 nanometers of aluminum from bottom to top; the structure of the visible light imaging area is 30 nanometers of silicon, 200 nanometers of germanium and 100 nanometers of aluminum from bottom to top; the structure of the medium-wave infrared imaging area is 200 nanometers of germanium, 8 nanometers of aluminum, 340 nanometers of germanium and 100 nanometers of aluminum from top to bottom; the structure of the long-wave infrared imaging area is 250 nanometers of germanium, 20 nanometers of indium tin oxide, 540 nanometers of germanium and 100 nanometers of aluminum from bottom to top; the deposition order of the thin films is as follows: (1) Deposit a complete aluminum layer with a thickness of 100 nm on the substrate without using a mask.

[0058] (2) Using a mask with a partial hole structure on the QR code, 340 nanometers of germanium and 8 nanometers of aluminum are deposited in sequence.

[0059] (3) Using a mask with holes under the QR code, 540 nm germanium, 20 nm indium tin oxide, and 50 nm germanium are deposited in sequence.

[0060] (4) A complete germanium layer with a thickness of 200 nm is deposited without using a mask. At this time, the microstructure of the medium-wave infrared imaging area meets the structural design of the designed medium-wave infrared imaging area, and the microstructure of the long-wave infrared imaging area meets the structural design of the designed long-wave infrared imaging area.

[0061] (5) A 30-nanometer-thick silicon layer is deposited using a mask with a hole in the middle of the QR code. At this time, the microstructure of the visible light imaging area meets the structural design of the designed visible light imaging area, and the microstructure of the area outside the QR code meets the structural design of the designed uniform segment background imaging area.

[0062] After the thin film deposition is completed, take out the sample from the deposition chamber.

[0063] The working principles of the visible light reflectance and mid-infrared emissivity of the uniform color background area, visible light imaging area, mid-wave infrared imaging area, and long-wave infrared imaging area are as follows: (1) The uniform color background area has no loss to mid-infrared light through the structure of the first impedance matching layer and the metal reflective layer from top to bottom, and has the characteristics of low mid-infrared emissivity.

[0064] (2) The visible light imaging area has no loss of mid-infrared light through the structure of the structural color layer, the second impedance matching layer, and the metal reflective layer from top to bottom, and has the characteristics of low emissivity in the mid-infrared. However, the structural color layer absorbs visible light, so it has a visible light color difference with the impedance matching layer on the top of other areas.

[0065] (3) The mid-wave infrared imaging area has a structure with a third impedance matching layer, a first ultra-thin metal layer, a first lossless dielectric layer, and a metal reflective layer from top to bottom, which can form Fabry-Perot resonance in the mid-wave infrared. Therefore, it has the characteristics of mid-wave infrared selective high emissivity, but the third impedance matching layer on the top layer makes it the same color as the visible light in the uniform color background area.

[0066] (4) The long-wave infrared imaging area has a structure with a fourth impedance matching layer, a second ultra-thin metal layer, a second lossless dielectric layer, and a metal reflective layer from top to bottom, which can form Fabry-Perot resonance in the long-wave infrared. Therefore, it has the characteristics of long-wave infrared selective high emissivity, but the fourth impedance matching layer on the top layer makes it the same color as the visible light in the uniform color background area.

[0067] Example 3:

[0068] This example introduces the optical performance test and decoding process of the three-band anti-counterfeiting label prepared in Example 2, as follows: (1) Test the visible light reflectivity of the three-band anti-counterfeiting label: The reflectance spectrum of the three-band anti-counterfeiting label in the visible spectrum (300-800 nm) was measured using a UV-visible-near-infrared spectrophotometer (Lambda 1050, PerkinElmer). Figure 6 As shown in (a), the average visible light reflectivity of the visible light imaging area of ​​the three-band anti-counterfeiting label is 0.19. The visible light reflectivity curves of the uniform color background, medium-wave infrared imaging and long-wave infrared imaging areas basically overlap, with average reflectivities of 0.51, 0.52 and 0.52 respectively, indicating that the visible light colors of these three areas are very close, further demonstrating that the human eye cannot perceive the information in the medium-wave infrared and long-wave infrared imaging areas.

[0069] (2) Test the emissivity of the three-band anti-counterfeiting label in the mid-infrared band: The emissivity spectra of the three-band anti-counterfeiting labels in the wavelength range of 3 to 14 μm were measured using an integrating sphere Fourier transform infrared (FTIR) spectrometer (Nicolet IS50, Thermo Scientific). Figure 6As shown in (b), the average emissivity of the medium-wave infrared in the uniform color background and visible light imaging area of ​​the three-band anti-counterfeiting label is 0.24 and 0.27, respectively, and the average emissivity of the long-wave infrared is 0.01 and 0.01, respectively; the average emissivity of the medium-wave infrared and long-wave infrared in the medium-wave infrared imaging area is 0.75 and 0.16, respectively; the average emissivity of the medium-wave infrared and long-wave infrared in the long-wave infrared imaging area is 0.24 and 0.78, respectively.

[0070] (3) Characterize the images of the three-band anti-counterfeiting label in three bands: The images of the three bands of the tag were taken using a smartphone, a medium-wave infrared camera, and a long-wave infrared camera. Figure 7 As shown, the three parts of the QR code can be clearly imaged under the three cameras and can be spliced ​​together to obtain a complete QR code pattern.

[0071] From the above tests, it can be seen that the three-band anti-counterfeiting label is able to encode complex information and decode it using detectors in different bands.

[0072] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A three-band anti-counterfeiting label, characterized by: include: substrate, metal reflective layer, uniform color background area, visible light imaging area, medium wave infrared imaging area and long wave infrared imaging area; A metal reflective layer is provided on the substrate, and a uniform color background area, a visible light imaging area, a medium-wave infrared imaging area, and a long-wave infrared imaging area are respectively provided on the metal reflective layer; The difference in average visible light reflectivity between the uniform background area and the medium-wave infrared imaging area or the long-wave infrared imaging area is less than 0.05; The difference in average visible light reflectivity between the visible light imaging area and the uniform color background area, the medium-wave infrared imaging area, or the long-wave infrared imaging area is greater than 0.2; The average emissivity of the medium-wave infrared imaging area is above 0.7, and the average emissivity of the long-wave infrared is below 0.3; The average long-wave infrared emissivity of the long-wave infrared imaging area is above 0.7, and the average medium-wave infrared emissivity is below 0.3; The uniform color background area, the visible light imaging area, the medium-wave infrared imaging area, and the long-wave infrared imaging area are respectively set as patterns containing information.

2. The three-band anti-counterfeiting label according to claim 1, characterized in that: The uniform color background area includes: a first impedance matching layer that is transparent in the mid-infrared band and has a thickness ranging from 100 to 700 nanometers.

3. The three-band anti-counterfeiting label according to claim 1, characterized in that: The visible light imaging area includes: a structural color layer that is transparent in the mid-infrared band and not completely transparent in the visible light band, with a thickness ranging from 10 to 200 nanometers, and a second impedance matching layer that is transparent in the mid-infrared band and has a thickness ranging from 100 to 700 nanometers; the structural color layer is arranged on the second impedance matching layer.

4. The three-band anti-counterfeiting label according to claim 1, characterized in that: The mid-wave infrared imaging area includes: a third impedance matching layer that is transparent in the mid-infrared band and has a thickness ranging from 200 to 500 nanometers; a first ultra-thin metal layer that is highly reflective in the mid-infrared band and has a thickness ranging from 5 to 20 nanometers; a first lossless dielectric layer that is transparent in the mid-infrared band and has a thickness ranging from 300 to 600 nanometers; a first ultra-thin metal layer is provided on the first lossless dielectric layer, and a third impedance matching layer is provided on the first ultra-thin metal layer.

5. The three-band anti-counterfeiting label according to claim 1, characterized in that: The long-wave infrared imaging region includes: a fourth impedance matching layer transparent in the mid-infrared band, with a thickness ranging from 200 to 500 nanometers; a second ultrathin metal layer with high reflectivity in the mid-infrared band, with a thickness ranging from 10 to 70 nanometers; a second lossless dielectric layer transparent in the mid-infrared band, with a thickness ranging from 300 to 700 nanometers; a second ultrathin metal layer disposed on the second lossless dielectric layer, and a fourth impedance matching layer disposed on the second ultrathin metal layer.

6. The three-band anti-counterfeiting label according to claim 1, characterized in that: The material of the substrate is one of silicon wafer, white glass, quartz, sapphire, polyimide, polyethylene terephthalate, polyethylene, nylon fabric, and non-woven fabric; the metal reflective layer is one of gold, silver, aluminum, copper, nickel, chromium, titanium, indium tin oxide, and aluminum-doped zinc oxide.

7. The three-band anti-counterfeiting label according to any one of claims 4 to 5, characterized in that: The first lossless dielectric layer and the second lossless dielectric layer are made of one of silicon, germanium, zinc sulfide, zinc selenide, barium fluoride, calcium fluoride, and hafnium oxide.

8. The three-band anti-counterfeiting label according to any one of claims 2 to 5, characterized in that: The first impedance matching layer, the second impedance matching layer, the third impedance matching layer, and the fourth impedance matching layer are made of one of silicon, germanium, zinc sulfide, and zinc selenide.

9. The three-band anti-counterfeiting label according to claim 3, characterized in that: The structural color layer is made of one of silicon, germanium, zinc sulfide, zinc selenide, barium fluoride, calcium fluoride, hafnium oxide, titanium dioxide, and silicon dioxide.

10. The three-band anti-counterfeiting label according to claims 4 to 5, characterized in that: The first ultra-thin metal layer and the second ultra-thin metal layer are made of one of gold, silver, aluminum, copper, nickel, chromium, titanium, indium tin oxide, and aluminum-doped zinc oxide.

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