Fixed-amplitude variable-pulse-width driving modulation method and device for state switching of silicon optical device

Abstract

The invention discloses a fixed-amplitude variable-pulse-width driving modulation method and device for state switching of a silicon optical device. The method comprises the following steps: generating a high-frequency clock signal corresponding to an initial clock signal according to the received initial clock signal; receiving the input driving control information, and carrying out cross-clock domain synchronization on a control signal contained in the driving control information to obtain a corresponding synchronization signal; performing state switching on a preset finite-state machine according to the synchronizing signal and the high-frequency clock signal; generating a corresponding pulse driving signal according to the real-time state of the finite-state machine and preset amplitude information; and outputting the pulse driving signal to a fixed-amplitude driving circuit, modulating and outputting a corresponding amplified pulse signal, and applying the amplified pulse signal to a silicon optical device. According to the method, the high-frequency clock signal is generated, the pulse driving signal for adjusting the pulse width is generated based on the driving control information, the amplified pulse signal with the fixed voltage amplitude is obtained through modulation of the fixed-amplitude driving circuit, the pulse signal modulation process is simplified, and power consumption and control complexity are remarkably reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor drive control technology, and in particular to a constant-amplitude variable-pulse-width drive modulation method and device for state switching of silicon photonic devices. Background Art

[0002] With the rapid development of information technology, the demand for data storage and processing is growing. Traditional electronic devices face challenges in terms of integration and processing speed. However, new devices such as silicon photonics are attracting widespread attention due to their high speed and potential low energy consumption. They have broad practical application prospects in high-speed optical communications, microwave photonics, optical neural networks, and optical quantum computing. Optical modulation, which is closely related to the state changes of silicon photonic devices, is crucial for the effective implementation of functional units in silicon photonics.

[0003] Among these, thermo-optical modulation is a relatively common modulation scheme, and using electric pulses to control microheaters is an important means of thermo-optical modulation. This method applies electric pulses to drive the microheater, using the heat generated by the microheater to rapidly change the temperature of the silicon material, thereby causing a change in its refractive index. This refractive index change directly affects the modulation process of the optical signal; by precisely controlling the amplitude and pulse width of the pulse, dynamic modulation of the optical signal can be achieved and is applicable to silicon optical devices. This regulation process has the advantages of low power consumption and simple process, making it suitable for optical communications and integrated optics applications. Pulse control can also improve the response speed and accuracy of the modulation, giving it broad application prospects in the field of silicon photonics.

[0004] However, in the existing technology, the modulation method based on variable amplitude constant pulse width commonly used in academia has some limitations. First, the voltage amplitude needs to be changed frequently during the modulation process, which not only increases the complexity of the circuit, but also leads to an increase in power consumption and a decrease in response speed. In addition, due to the instability of the voltage amplitude and the overshoot and oscillation that may occur during high-speed switching, the modulation accuracy is also difficult to be effectively guaranteed. Especially in high-speed optical communications and integrated optics applications, the lack of response speed and modulation accuracy has become the main bottleneck limiting the performance improvement of silicon photonic devices. Therefore, the pulse modulation method used for driving silicon photonic devices in the existing technical methods has the problem of poor modulation accuracy. Summary of the Invention

[0005] The embodiments of the present invention provide a fixed-amplitude variable pulse width drive modulation method and apparatus for state switching of silicon photonic devices, aiming to solve the problem of poor modulation accuracy in the pulse modulation method for driving silicon photonic devices in the prior art.

[0006] In a first aspect, an embodiment of the present invention provides a fixed-amplitude variable pulse width drive modulation method for silicon photonic device state switching. The method is applied to a controller of a fixed-amplitude variable pulse width drive modulation device for silicon photonic device state switching. The fixed-amplitude variable pulse width drive modulation device for silicon photonic device state switching further includes a fixed-amplitude drive circuit communicatively connected to the controller. The method includes:

[0007] generating a high-frequency clock signal corresponding to the initial clock signal according to the received initial clock signal;

[0008] receiving input drive control information, performing cross-clock domain synchronization on a control signal included in the drive control information, and obtaining a corresponding synchronization signal;

[0009] Switching the state of a preset finite state machine according to the synchronization signal and the high-frequency clock signal;

[0010] Generate a corresponding pulse drive signal according to the real-time state of the finite state machine;

[0011] The pulse drive signal is output to the constant amplitude drive circuit, so that the constant amplitude drive circuit modulates and outputs a corresponding amplified pulse signal based on the pulse drive signal and applies the amplified pulse signal to a silicon optical device.

[0012] In a second aspect, an embodiment of the present invention further provides a fixed-amplitude variable pulse width drive modulation device for state switching of a silicon photonic device. The controller in the fixed-amplitude variable pulse width drive modulation device applies the fixed-amplitude variable pulse width drive modulation method for state switching of a silicon photonic device as described in the first aspect above. The device includes a high-frequency clock module, a register, a signal synchronization module, a finite state machine, and a pulse signal generator configured in the controller; the device also includes a clock module;

[0013] The clock module is connected to the high-frequency clock module, and the clock module is used to output an initial clock signal;

[0014] The register is connected to the signal synchronization module, and the register is used to store input drive control information;

[0015] The high-frequency clock module and the signal synchronization module are respectively connected to the finite state machine, and the finite state machine is connected to the pulse signal generator; the output end of the pulse signal generator is connected to the fixed amplitude drive circuit.

[0016] The present invention provides a method and apparatus for constant-amplitude variable pulse width drive modulation for state switching of silicon photonic devices. The method comprises: generating a high-frequency clock signal corresponding to the initial clock signal based on a received initial clock signal; receiving input drive control information, performing cross-clock domain synchronization on the control signal contained in the drive control information, and obtaining a corresponding synchronization signal; switching the state of a preset finite state machine based on the synchronization signal and the high-frequency clock signal; generating a corresponding pulse drive signal based on the real-time state of the finite state machine and preset amplitude information; and outputting the pulse drive signal to a constant-amplitude drive circuit, so that the constant-amplitude drive circuit modulates the pulse drive signal to output a corresponding amplified pulse signal and applies it to the silicon photonic device. The method generates a high-frequency clock signal within a controller and generates a pulse drive signal with an adjusted pulse width based on the drive control information, and modulates the fixed-amplitude drive circuit to obtain an amplified pulse signal with a fixed voltage amplitude. This method not only simplifies the pulse signal modulation process but also significantly reduces power consumption and control complexity. It can achieve precise control of the optical signal by flexibly adjusting the pulse width, while reducing instability caused by voltage changes, making modulation faster and more accurate, and improving the accuracy of pulse signal modulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 A method flow chart of a constant-amplitude variable-pulse-width drive modulation method for state switching of a silicon photonic device provided by an embodiment of the present invention;

[0019] Figure 2 A schematic structural diagram of a constant-amplitude variable-pulse-width drive modulation device for state switching of a silicon photonic device provided by an embodiment of the present invention;

[0020] Figure 3 A schematic diagram of an application of a constant-amplitude variable-pulse-width drive modulation device for state switching of a silicon photonic device provided by an embodiment of the present invention;

[0021] Figure 4 A circuit structure diagram of a fixed amplitude drive circuit provided in an embodiment of the present invention;

[0022] Figure 5 This is an application effect diagram of the constant-amplitude variable-pulse-width drive modulation device for state switching of silicon photonic devices provided by an embodiment of the present invention;

[0023] Figure 6Another application effect diagram of the constant-amplitude variable-pulse-width drive modulation device for state switching of silicon photonic devices provided by an embodiment of the present invention;

[0024] Figure 7 It is a schematic block diagram of a computer device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0026] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0027] It should also be understood that the terms used in the present specification are only for the purpose of describing particular embodiments and are not intended to limit the present invention. As used in the present specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0028] It should be further understood that the term "and / or" used in the present description and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0029] See also Figure 1 As shown in the figure, the embodiment of the present invention provides a fixed-amplitude variable pulse width drive modulation method for silicon photonic device state switching. The method is applied to the controller of the fixed-amplitude variable pulse width drive modulation device for silicon photonic device state switching. The method is executed by the application software installed in the controller. Specific application scenarios are as follows Figure 2As shown, one input end of the controller is connected to a clock module, which is used to input an initial clock signal to the controller. The output end of the controller is connected to a fixed-amplitude drive circuit. The controller outputs a pulse drive signal to the fixed-amplitude drive circuit. The fixed-amplitude drive circuit modulates the pulse drive signal and outputs a corresponding amplified pulse signal. The amplified pulse signal can be used to drive the microheater and generate heat to act on the silicon optical device. The controller is configured with at least one 8-bit input port, which can be used to input drive control information. The controller can be an FPGA (Field-Programmable Gate Array) chip. Figure 1 As shown, the method includes steps S110 to S150.

[0030] S110 . Generate a high-frequency clock signal corresponding to the received initial clock signal.

[0031] The controller receives an initial low-frequency clock signal from the clock module. To improve control accuracy, the controller generates a high-frequency clock signal based on the initial clock signal. For example, the clock module may be a crystal oscillator that generates a 33.333 MHz clock signal, resulting in a high-frequency clock signal of 250 MHz.

[0032] In a specific embodiment, step S110 includes sub-steps: dividing the initial clock signal in the time domain according to preset pulse segmentation parameters to obtain a corresponding high-frequency signal; determining the time parameters of each signal in the high-frequency signal to obtain a corresponding high-frequency clock signal.

[0033] Specifically, the initial clock signal can be divided in the time domain according to the pulse division parameter. For example, if the division parameter is 15 / 2, one clock cycle of the clock signal is divided into 15 parts on average. After the division, every two signals are combined into a signal of one clock cycle (clock cycle is 4ns), and the obtained signal is used as the high-frequency signal. Further determine the time parameters of each signal in each high-frequency signal. For example, if the frequency of the high-frequency signal is 250MHz, 2.5×10 8 To distinguish high-frequency signals, a time parameter can be added to a specific high-frequency signal. For example, a time parameter can be added to the first high-frequency signal generated in each millisecond. All subsequent high-frequency signals generated within the same millisecond share this time parameter, allowing the time parameter to be used to distinguish the millisecond in which the high-frequency signal was generated. Once the time parameter is determined, the corresponding high-frequency clock signal can be obtained. This high-frequency clock signal is key to achieving fine pulse width control. To further improve accuracy, a time parameter can be added to the first high-frequency signal generated in each microsecond. Based on this time parameter, the microsecond in which the high-frequency signal was generated can be distinguished.

[0034] S120: Receive input drive control information, perform cross-clock domain synchronization on a control signal included in the drive control information, and obtain a corresponding synchronization signal.

[0035] The controller can receive input drive control information. If the drive control information contains multiple control signals, the controller can synchronize the control signals contained therein across clock domains based on the received drive control information to obtain corresponding synchronization signals. Specifically, the drive control information includes control signals such as low-level duration (pulse_low_i), high-level duration (pulse_high_i), number of pulses (pulse_number_i), and control commands (sys_cmd_i). To improve control accuracy, the above control signals need to be synchronized. After synchronization, a set of synchronization signals corresponding to the drive control information can be obtained.

[0036] In a specific embodiment, step S120 includes sub-steps of: determining a corresponding synchronization time according to the storage time of each control signal in the drive control information; and performing signal alignment on each control signal according to the synchronization time to obtain a corresponding synchronization signal.

[0037] After the controller receives the drive control information, it stores the drive control information in the register. The register can be used to synchronize data across clock domains to ensure that the data used in the pulse generation clock domain is stable and synchronized. The corresponding synchronization time can be determined based on the storage time of each control signal in the drive control information, such as obtaining a control signal with the latest storage time, and using the storage time of the control signal as the synchronization time. Alternatively, a control signal with the latest storage time in the drive control information is obtained, and the next time parameter closest to the storage time of the control signal is obtained as the synchronization time. At this time, the synchronization time is consistent with a time parameter that is about to be generated in the high-frequency clock signal. The control signals are aligned according to the determined synchronization time, and the control signals contained in the drive control information are bound into a group of synchronization signals based on the determined synchronization time, and the synchronization signals are synchronized in subsequent steps.

[0038] S130 , switching the state of a preset finite state machine according to the synchronization signal and the high-frequency clock signal.

[0039] Furthermore, a finite state machine is pre-configured in the controller, which is used to record the current state information. The finite state machine has only one state at each moment, and the state of the finite state machine is switched according to the synchronization signal and high-frequency clock signal obtained in the above steps.

[0040] In a specific embodiment, step S130 includes sub-steps: setting the switching parameters corresponding to each state in the finite state machine according to the synchronization signal; receiving a start instruction and switching from the idle state to the high level state; switching between the high level state and the low level state according to the switching parameters until the number of pulses reaches the number parameter set in the switching parameters, then switching to the stop state.

[0041] Specifically, the switching parameters corresponding to each state in the finite state machine can be set according to the synchronization signal. Finite state machines include idle state, high state, low state, and stop state; the switching parameters for the high state and low state can be set accordingly, as well as the switching parameters of the finite state machine (the switching parameters of the finite state machine are also the global switching parameters of the finite state machine).

[0042] The finite state machine is in an idle state in the initial state. When it receives the start command (CPSG_cmd_sync_r==8'h01), it starts working. At this time, the finite state machine switches from the idle state to the high level state. The start command can be triggered by the generated synchronization signal, that is, the start command is triggered at the same time as the synchronization signal is generated; the finite state machine switches between the high level state and the low level state according to the switching parameter. Specifically, if the finite state machine is in the high level state, it determines whether the switching parameter of the high level state is met based on the continuously received high-frequency clock signal (determine whether the number of continuously received high-frequency clock signals is not small). In the high-level counting parameter), if it is satisfied, it switches from the high-level state to the low-level state and counts the current number of pulses to determine whether the current number of pulses reaches the number parameter set in the switching parameter (determine whether the switching parameter of the finite state machine is satisfied); if the number parameter is reached, it switches to the stop (STOP) state and jumps out of the above loop; if the number parameter is not reached, it determines whether the switching parameter of the low-level state is satisfied (determine whether the number of continuously received high-frequency clock signals is not less than the low-level counting parameter). If the switching parameter of the low-level state is satisfied, it switches from the low-level state to the high-level state, that is, realizes the high-level / low-level state cyclic switching.

[0043] If the finite state machine is in the Stop state, it can receive a new start command (CPSG_cmd_sync_r == 8'h02). If a new start command is received, it switches to the IDLE state or remains in the Stop state. At this time, it waits for the subsequent start command (CPSG_cmd_sync_r == 8'h01) to start the work and repeat the above state switching process.

[0044] In a specific embodiment, setting the switching parameters corresponding to each state in the finite state machine according to the synchronization signal includes: calculating the corresponding quantity parameter, high-level count parameter and low-level count parameter according to the synchronization signal; and setting the switching parameters corresponding to each state in the finite state machine according to the quantity parameter, the high-level count parameter and the low-level count parameter.

[0045] When setting the switching parameters, the corresponding quantity parameters, high-level count parameters and low-level count parameters can be calculated based on the synchronization signal; specifically, the number of pulses in the synchronization signal can be used as the corresponding quantity parameter, and the low-level count parameter can be calculated based on the low-level duration in the synchronization signal. The low-level duration is divided by the clock period of the high-frequency clock signal to obtain the corresponding low-level count parameter; similarly, the high-level duration in the synchronization signal is divided by the clock period of the high-frequency clock signal to obtain the corresponding high-level count parameter.

[0046] Furthermore, the obtained quantity parameter is configured as the global switching parameter of the finite state machine, the low level count parameter is configured as the switching parameter of the low level state, and the high level count parameter is configured as the switching parameter of the high level state, thereby completing the setting of the switching parameters corresponding to each state in the finite state machine.

[0047] S140 , generating a corresponding pulse driving signal according to the real-time state of the finite state machine.

[0048] The real-time state of the finite state machine is obtained, and a corresponding pulse driving signal is generated according to the real-time state, so that the generated pulse driving signal corresponds to the real-time state of the finite state machine.

[0049] In a specific embodiment, generating a corresponding pulse drive signal according to the real-time state of the finite state machine includes: determining whether the real-time state of the finite state machine is a high-level state; if the finite state machine is in a high-level state, generating a high-level signal as the pulse drive signal; if the finite state machine is not in a high-level state, generating a low-level signal as the pulse drive signal.

[0050] Specifically, it can be determined whether the real-time state of the finite state machine is in a high-level state. If it is in a high-level state, a high-level signal is generated accordingly; if it is not in a high-level state, a low-level signal is generated accordingly. The combination of the high-level signal and the low-level signal can form a continuous pulse drive signal. If the finite state machine is in an idle state or a stopped state, a low-level signal is also generated. However, the low-level signal generated in this case is not a pulse drive signal. The low-level signal is a continuous low-voltage signal (non-pulse signal).

[0051] S150 , outputting the pulse drive signal to the constant amplitude drive circuit, so that the constant amplitude drive circuit modulates and outputs a corresponding amplified pulse signal based on the pulse drive signal and applies the amplified pulse signal to a silicon photonic device.

[0052] The obtained pulse drive signal is output to the fixed-amplitude drive circuit, which amplifies and modulates the pulse drive signal to output an amplified pulse signal corresponding to the pulse drive signal. The amplified pulse signal can be applied to silicon optical devices.

[0053] The fixed-amplitude variable pulse width drive modulation method for state switching of silicon photonic devices disclosed in the above embodiment includes: generating a high-frequency clock signal corresponding to the initial clock signal based on a received initial clock signal; receiving input drive control information, performing cross-clock domain synchronization on the control signal contained in the drive control information to obtain a corresponding synchronization signal; switching the state of a preset finite state machine based on the synchronization signal and the high-frequency clock signal; generating a corresponding pulse drive signal based on the real-time state of the finite state machine and preset amplitude information; and outputting the pulse drive signal to a fixed-amplitude drive circuit, so that the fixed-amplitude drive circuit modulates the pulse drive signal to output a corresponding amplified pulse signal and applies it to the silicon photonic device. The above method generates a high-frequency clock signal within a controller and generates a pulse drive signal with an adjusted pulse width based on the drive control information, and modulates the fixed-amplitude drive circuit to obtain an amplified pulse signal with a fixed voltage amplitude. This method not only simplifies the pulse signal modulation process but also significantly reduces power consumption and control complexity. It can achieve precise control of the optical signal by flexibly adjusting the pulse width, while reducing instability caused by voltage changes, making modulation faster and more accurate, and improving the accuracy of pulse signal modulation.

[0054] The present invention also provides a fixed-amplitude variable pulse width drive modulation device for switching the state of a silicon photonic device. The controller in the fixed-amplitude variable pulse width drive modulation device applies any of the above-mentioned fixed-amplitude variable pulse width drive modulation methods for switching the state of a silicon photonic device. Figures 2 to 4 .

[0055] like Figure 2As shown, the fixed-amplitude variable pulse width drive modulation device includes a high-frequency clock module 11, a register 12, a signal synchronization module 13, a finite state machine 14 and a pulse signal generator 15 configured in the controller 10; the device also includes a clock module 20; the clock module 20 is connected to the high-frequency clock module 11, and the clock module 20 is used to output an initial clock signal; the register 12 is connected to the signal synchronization module 13, and the register 12 is used to store the input drive control information; the high-frequency clock module 11 and the signal synchronization module 13 are respectively connected to the finite state machine 14, and the finite state machine 14 is connected to the pulse signal generator 15; the output end of the pulse signal generator 15 is connected to the fixed-amplitude drive circuit 30.

[0056] Among them, the clock module 20 can be a crystal oscillator clock, which is used to generate a low-frequency initial clock signal. The high-frequency clock module 11 receives the initial clock signal and generates a high-frequency clock signal accordingly. The register 12 is used to receive the input drive control information and store it; the signal synchronization module 13 obtains a set of drive control information stored in the register 12, and synchronizes the control signal contained in the drive control information across clock domains. The synchronization signal and the high-frequency clock signal are respectively input into the finite state machine 14, and the finite state machine 14 switches states according to the high-frequency clock signal and the synchronization signal; the pulse signal generator 15 obtains the real-time state of the finite state machine 14 and generates a pulse drive signal accordingly. The pulse drive signal is output to the fixed-amplitude drive circuit 30 to drive the fixed-amplitude drive circuit 30 to modulate and output the corresponding amplified pulse signal.

[0057] In a more specific embodiment, Figure 4 As shown, the constant amplitude driving circuit 30 includes an optocoupler isolator U1, a driving transistor Q1, a first diode D1, a first resistor R1, a second resistor R2 and a third resistor R3; one end of the first resistor R1 is connected to the output end of the pulse signal generator 15; the other end of the first resistor R1 is connected to the cathode of the first diode D1 and the first end of the optocoupler isolator U1; the cathode of the first diode D1 and the second end of the optocoupler isolator U1 are grounded; the third end of the optocoupler isolator U1 is grounded, and the fourth end of the optocoupler isolator U1 is connected to one end of the second resistor R2 and the gate of the driving transistor Q1; the other end of the second resistor R2 is connected to the regulated power supply VCC; the source of the driving transistor Q1 is grounded, and the drain of the driving transistor Q1 is connected to one end of the third resistor R3 and serves as the output end of the amplified pulse signal; the other end of the third resistor R3 is connected to the transistor power supply end V2.

[0058] V1 is connected to the pulse output terminal of the controller 10. When the controller 10 outputs a low level, the optocoupler isolator U1 is illuminated, allowing current to flow. When the controller 10 outputs a high level, the optocoupler isolator U1 is not illuminated, cutting off the current. This shows that the pulse drive signal output by the controller 10 directly controls the on and off of the optocoupler isolator U1. Figure 4 The probe 1 is used to measure the voltage (amplitude) of the amplified pulse signal output by the constant-amplitude driving circuit 30 ; XSC1 is a signal detector (such as an oscilloscope) used to detect the pulse width of the amplified pulse signal output by the constant-amplitude driving circuit 30 .

[0059] The optocoupler isolator U1 acts as a switch here. It receives the pulse drive signal output by the controller 10, converts it into an optical signal through the internal optical transmitter, and then converts the optical signal back into an electrical signal by the optical receiver, thereby driving the subsequent driving transistor Q1.

[0060] The driving transistor Q1 is also a MOSFET (metal oxide semiconductor field effect transistor), and the driving transistor Q1 is the core power switch in this solution. The output signal of the optocoupler isolator U1 is directly connected to the gate (Gate) of the driving transistor Q1; when the signal output by the optocoupler isolator U1 is input to the gate of the driving transistor Q1 and turns it on, a low resistance path is formed between the drain (Drain) and the source (Source) of the driving transistor Q1, allowing current to flow through the load; when the optocoupler isolator U1 outputs a signal to the gate of the driving transistor Q1 to turn its gate off, the drain and source of the driving transistor Q1 become high resistance, cutting off the current. By controlling the on and off of the driving transistor Q1, the voltage and current capabilities of the input pulse drive signal can be amplified, thereby driving a higher power load and realizing a "fixed amplitude" pulse output. Among them, the driving transistor Q1 is also a high-speed analog switch (single-pole double-throw switch) configured in the fixed amplitude drive circuit. The specific process of the controller 10 controlling the driving transistor Q1 is as follows. Figure 3 shown.

[0061] The driving transistor Q1 is powered by the transistor power supply terminal V2, and its voltage value directly determines the amplitude of the output pulse. No matter how the pulse width changes, as long as the transistor power supply terminal V2 remains stable, the amplitude of the output pulse remains unchanged. Variable pulse width: The variable pulse width pulse drive signal generated by the output terminal of the controller is isolated by the optocoupler isolator U1, and directly controls the switching time of the driving transistor Q1, so that the output amplified pulse signal accurately replicates the pulse width change output by the controller 10, thereby realizing variable pulse width pulse signal modulation. This solution, through the isolation of the optocoupler isolator U1 and the power amplification of the driving transistor Q1, combined with the fixed power supply voltage input by the transistor power supply terminal V2, ultimately achieves the application effect of generating a fixed-amplitude high-power output of a precise variable pulse width signal through a fixed-amplitude variable pulse width drive modulation device.

[0062] The above-mentioned fixed-amplitude variable pulse width drive modulation method and device technically overcome the problems of slow response speed, insufficient modulation accuracy and high power consumption in the modulation process of existing silicon optical devices. By fixing the voltage amplitude and only adjusting the pulse width, this method simplifies the modulation process, avoids the system complexity and stability problems caused by voltage amplitude changes, and ensures the accuracy and consistency of the modulation effect. The application process of the above-mentioned fixed-amplitude variable pulse width drive modulation device was tested, and the relationship between the specific pulse width change and the surface temperature of the optical waveguide material was shown as follows: Figure 5 As shown. Among them, T c represents the crystallization temperature of Sb2Se3 phase change material, and T m It represents the melting temperature. Sb2Se3 phase change material can be reversibly converted between its amorphous state and crystalline state, thereby realizing multi-level storage, and then supporting the ability to write multi-bit information. According to the graphical relationship between electrical parameters and temperature response, under the condition of fixed voltage amplitude, by precisely controlling the width of the electric pulse, the material can be effectively induced to complete the crystallization and amorphization process. The above-mentioned fixed-amplitude variable pulse width drive modulation method can provide key technical support for the switching of the state of silicon optical devices. The working principle of silicon optical devices (such as silicon-based electro-optical modulators, optical switches, etc.) often relies on mechanisms such as carrier injection, depletion or thermo-optical effects. The response speed and efficiency of these mechanisms are highly sensitive to the amplitude and duration of the driving electric pulse. The method proposed in this patent cleverly applies these advanced electric pulse generation and driving technologies to silicon optical devices to overcome the limitations of traditional driving methods and achieve more efficient and more accurate device state switching. Figure 6 The figure shows the device temperature corresponding to the pulse drive with a fixed voltage amplitude of 7.5V and a pulse width of 13us and 5us in a Si3N4 integrated photonic circuit based on Ge2Sb2Se4Te1, reflecting the intensity change of the corresponding current thermal effect under different pulse widths. mrepresents the melting temperature of the Ge2Sb2Se4Te1 material. τ1 and τ2 represent two different thermal time constants, revealing a two-stage heat dissipation mechanism: initially, extremely rapid planar heat dissipation within the graphene layer is dominant, followed by a slower, perpendicular heat dissipation process toward the Si3N4 substrate. This graph achieves precise control of device state switching by maintaining a fixed voltage amplitude (7.5V) to ensure stable heating power and finely adjusting the pulse width (comparing 5μs and 13μs). This also provides a key basis for optimizing switching energy consumption. The controller in the fixed-amplitude variable pulse width drive modulation device for state switching of silicon photonic devices provided in an embodiment of the present invention applies the above-mentioned fixed-amplitude variable pulse width drive modulation method for state switching of silicon photonic devices. The controller generates a high-frequency clock signal corresponding to the initial clock signal based on the received initial clock signal; receives input drive control information, synchronizes the control signal contained in the drive control information across clock domains to obtain a corresponding synchronization signal; switches the state of a preset finite state machine based on the synchronization signal and the high-frequency clock signal; generates a corresponding pulse drive signal based on the real-time state of the finite state machine and preset amplitude information; and outputs the pulse drive signal to a fixed-amplitude drive circuit, so that the fixed-amplitude drive circuit modulates the pulse drive signal to output a corresponding amplified pulse signal and applies it to the silicon photonic device. The above-mentioned method generates a high-frequency clock signal within the controller and generates a pulse drive signal with an adjusted pulse width based on the drive control information. The fixed-amplitude drive circuit modulates the amplified pulse signal with a fixed voltage amplitude, which not only simplifies the pulse signal modulation process but also significantly reduces power consumption and control complexity. The controller can achieve precise control of the optical signal by flexibly adjusting the pulse width, while reducing instability caused by voltage changes, making the modulation faster and more accurate, and improving the accuracy of the pulse signal modulation.

[0063] The above-mentioned constant amplitude variable pulse width drive modulation method for state switching of silicon photonic devices can be implemented in the form of a computer program. The computer program can be used in the following ways: Figure 7 If the computer device shown in FIG. 1 is used, the controller can be implemented as follows: Figure 7 Computer equipment shown.

[0064] See also Figure 7 , Figure 7 This is a schematic block diagram of a computer device provided by an embodiment of the present invention. The computer device may be a controller for executing a constant-amplitude variable-pulse-width drive modulation method for state switching of a silicon photonic device to implement constant-amplitude variable-pulse-width drive modulation.

[0065] See Figure 7 The computer device 500 includes a processor 502 , a memory, and a network interface 505 connected via a communication bus 501 , wherein the memory may include a storage medium 503 and an internal memory 504 .

[0066] The storage medium 503 can store an operating system 5031 and a computer program 5032. When the computer program 5032 is executed, the processor 502 can execute a constant-amplitude variable-pulse-width drive modulation method for switching the state of a silicon photonic device. The storage medium 503 can be a volatile storage medium or a non-volatile storage medium.

[0067] The processor 502 is used to provide computing and control capabilities to support the operation of the entire computer device 500.

[0068] The internal memory 504 provides an environment for the operation of the computer program 5032 in the storage medium 503. When the computer program 5032 is executed by the processor 502, the processor 502 can execute a constant-amplitude variable-pulse-width driving modulation method for state switching of silicon photonic devices.

[0069] The network interface 505 is used for network communication, such as providing data information transmission. Those skilled in the art will understand that Figure 7 The structure shown in the figure is merely a block diagram of a portion of the structure related to the solution of the present invention and does not constitute a limitation on the computer device 500 to which the solution of the present invention is applied. The specific computer device 500 may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0070] The processor 502 is configured to run a computer program 5032 stored in the memory to implement corresponding functions in the above-mentioned constant-amplitude variable-pulse-width drive modulation method for state switching of silicon photonic devices.

[0071] Those skilled in the art will understand that Figure 7 The embodiment of the computer device shown in the figure does not constitute a limitation on the specific composition of the computer device. In other embodiments, the computer device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently. For example, in some embodiments, the computer device may only include a memory and a processor. In such an embodiment, the structure and function of the memory and processor are the same as those in the figure. Figure 7 The embodiments shown are consistent and will not be described again here.

[0072] It should be understood that in the embodiment of the present invention, the processor 502 may be a central processing unit (CPU), and the processor 502 may also be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor, etc.

[0073] In another embodiment of the present invention, a computer-readable storage medium is provided. The computer-readable storage medium may be volatile or non-volatile. The computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps included in the aforementioned constant-amplitude variable-pulse-width drive modulation method for state switching of a silicon photonic device.

[0074] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described equipment, devices and units can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented with electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in terms of function in the above description. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0075] In the several embodiments provided by the present invention, it should be understood that the disclosed devices, apparatuses and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, or units with the same function may be combined into one unit. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interfaces, devices or units, or may be an electrical, mechanical or other form of connection.

[0076] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected according to actual needs to achieve the objectives of the embodiments of the present invention.

[0077] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0078] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention is essentially or the part that contributes to the existing technology, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a computer-readable storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned computer-readable storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a magnetic disk, or an optical disk.

[0079] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A constant amplitude variable pulse width drive modulation method for state switching of silicon photonic devices, characterized in that: The method is applied to a controller of a fixed-amplitude variable pulse width drive modulation device for switching the state of a silicon photonic device, wherein the fixed-amplitude variable pulse width drive modulation device for switching the state of a silicon photonic device further includes a fixed-amplitude drive circuit that is communicatively connected to the controller. The method includes: generating a high-frequency clock signal corresponding to the initial clock signal according to the received initial clock signal; receiving input drive control information, performing cross-clock domain synchronization on a control signal included in the drive control information, and obtaining a corresponding synchronization signal; Switching the state of a preset finite state machine according to the synchronization signal and the high-frequency clock signal; Generate a corresponding pulse drive signal according to the real-time state of the finite state machine; The pulse drive signal is output to the constant amplitude drive circuit, so that the constant amplitude drive circuit modulates and outputs a corresponding amplified pulse signal based on the pulse drive signal and applies the amplified pulse signal to a silicon optical device.

2. The constant-amplitude variable-pulse-width drive modulation method for silicon photonic device state switching according to claim 1, characterized in that: Generating a high-frequency clock signal corresponding to the initial clock signal according to the received initial clock signal includes: Segmenting the initial clock signal in the time domain according to preset pulse segmentation parameters to obtain a corresponding high-frequency signal; Determine the time parameter of each signal in the high-frequency signal to obtain a corresponding high-frequency clock signal.

3. The constant-amplitude variable-pulse-width drive modulation method for silicon photonic device state switching according to claim 1, characterized in that: The performing cross-clock domain synchronization on the control signal included in the drive control information to obtain a corresponding synchronization signal includes: Determining a corresponding synchronization time according to a storage time of each control signal in the drive control information; Signal alignment is performed on each control signal according to the synchronization time to obtain a corresponding synchronization signal.

4. The constant-amplitude variable-pulse-width drive modulation method for silicon photonic device state switching according to claim 1, characterized in that: The state switching of a preset finite state machine according to the synchronization signal and the high-frequency clock signal includes: Setting the switching parameters corresponding to each state in the finite state machine according to the synchronization signal; Receive the start command and switch from the idle state to the high level state; The state is switched between the high level state and the low level state according to the switching parameter, and is switched to the stop state until the number of pulses reaches the number parameter set in the switching parameter.

5. The constant-amplitude variable-pulse-width drive modulation method for silicon photonic device state switching according to claim 4, characterized in that: The step of setting the switching parameters corresponding to each state in the finite state machine according to the synchronization signal includes: Calculate the corresponding quantity parameter, high level count parameter and low level count parameter according to the synchronization signal; The switching parameters corresponding to each state in the finite state machine are correspondingly set according to the quantity parameter, the high level count parameter and the low level count parameter.

6. The constant-amplitude variable-pulse-width drive modulation method for silicon photonic device state switching according to claim 1, characterized in that: Generating a corresponding pulse drive signal according to the real-time state of the finite state machine includes: Determining whether the real-time state of the finite state machine is a high-level state; If the finite state machine is in a high level state, generating a high level signal as the pulse driving signal; If the finite state machine is not in a high level state, a low level signal is generated as the pulse driving signal.

7. A constant-amplitude variable-pulse-width drive modulation device for state switching of silicon photonic devices, characterized in that: The controller in the fixed-amplitude variable pulse width drive modulation device applies the fixed-amplitude variable pulse width drive modulation method for silicon photonic device state switching according to any one of claims 1 to 6, and the device includes a high-frequency clock module, a register, a signal synchronization module, a finite state machine, and a pulse signal generator configured in the controller; the device also includes a clock module; The clock module is connected to the high-frequency clock module, and the clock module is used to output an initial clock signal; The register is connected to the signal synchronization module, and the register is used to store input drive control information; The high-frequency clock module and the signal synchronization module are respectively connected to the finite state machine, and the finite state machine is connected to the pulse signal generator; the output end of the pulse signal generator is connected to the fixed amplitude drive circuit.

8. The constant-amplitude variable-pulse-width drive modulation device for state switching of silicon photonic devices according to claim 7, characterized in that: The fixed amplitude driving circuit includes an optocoupler isolator, a driving transistor, a first diode, a first resistor, a second resistor and a third resistor; One end of the first resistor is connected to the output end of the pulse signal generator; the other end of the first resistor is connected to the cathode of the first diode and the first end of the optocoupler isolator; The cathode of the first diode and the second end of the optocoupler isolator are grounded; the third end of the optocoupler isolator is grounded, and the fourth end of the optocoupler isolator is connected to one end of the second resistor and the gate of the driving transistor; the other end of the second resistor is connected to a regulated power supply; The source of the driving transistor is grounded, the drain of the driving transistor is connected to one end of the third resistor and serves as the output end of the amplified pulse signal; the other end of the third resistor is connected to the transistor power supply end.

9. A computer device, characterized in that: The device includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other via the communication bus; Memory for storing computer programs; The processor is configured to implement the steps of the constant-amplitude variable-pulse-width drive modulation method for state switching of a silicon photonic device according to any one of claims 1 to 6 when executing a program stored in the memory.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the constant-amplitude variable-pulse-width drive modulation method for state switching of a silicon photonic device are implemented as described in any one of claims 1 to 6.

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