Measurement device, information processing system, and measurement method

Abstract

The invention provides a device and the like for measuring heat flow and temperature of the same part. According to one embodiment of the present invention, a measurement device is provided. This measurement device is provided with a thermoelectric conversion circuit, a heat flow measurement unit, and a temperature measurement unit. The thermoelectric conversion circuit includes an element configured to generate an electromotive force by a temperature gradient generated by heat exchange with the measurement object. The heat flow measurement unit is configured to measure a heat flow generated in the measurement target on the basis of an electric signal generated in the thermoelectric conversion circuit by the electromotive force. The temperature measurement unit is configured so as to cause the second current to flow along a path through which the first current generated by the electromotive force flows in at least a part of the thermoelectric conversion circuit, measure the resistance of at least a part of the thermoelectric conversion circuit, and measure the temperature of the measurement target on the basis of the resistance.

Description

Technical Field

[0001] The present invention relates to a measuring device, an information processing system and a measuring method. Background Art

[0002] Patent Document 1 discloses a technique for controlling the temperature of a test cell by installing a heat flow sensor and a temperature sensor at different locations of the test cell.

[0003] Citation List

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-149158 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] When the heat flow sensor and the temperature sensor are placed at different locations, the heat flow and temperature at the same location are not measured, and therefore control or information processing based on the heat flow and temperature at the same location cannot be performed.

[0008] In view of the above circumstances, the present invention provides a device for measuring heat flow and temperature at the same location.

[0009] Means for solving problems

[0010] According to one aspect of the present invention, a measuring device is provided. The measuring device includes a thermoelectric conversion circuit, a heat flow measuring unit, and a temperature measuring unit. The thermoelectric conversion circuit includes an element configured to generate an electromotive force due to a temperature gradient generated by heat exchange with a measurement object. The heat flow measuring unit is configured to measure the heat flow generated in the measurement object based on an electrical signal generated in the thermoelectric conversion circuit due to the electromotive force. The temperature measuring unit is configured to flow a second current through at least a portion of the thermoelectric conversion circuit along a path along which a first current generated by the electromotive force flows, measure the resistance of at least a portion of the thermoelectric conversion circuit, and measure the temperature of the measurement object based on the resistance.

[0011] Effects of the Invention

[0012] According to such a configuration, it is possible to provide a device or the like that measures the heat flow and temperature at the same location. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a diagram showing a conventional measurement method.

[0014] Figure 2 This is a diagram showing an example of a heat flow sensor.

[0015] Figure 31 is a diagram schematically showing an example of the appearance of the measurement system 1 .

[0016] Figure 4 This is a diagram showing an example of more detailed components of the measurement system 1 .

[0017] Figure 5 It is an enlarged view showing the thermoelectric conversion device 22 .

[0018] Figure 6 2 is a block diagram showing the hardware configuration of the user terminal 4 .

[0019] Figure 7 This is a diagram showing an example of measurement error.

[0020] Figure 8 This is a diagram showing an example of a measurement method.

[0021] Figure 9 This is a diagram showing an example of a measurement method.

[0022] Figure 10 is a diagram showing an example of a sense current.

[0023] Figure 11 is a diagram showing an example of a sense current.

[0024] Figure 12 This is a diagram for explaining the measured temperature.

[0025] Figure 13 This is an activity diagram showing an example of the information processing flow. DETAILED DESCRIPTION

[0026] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and repeated descriptions are omitted.

[0027] In addition, the program for implementing the software appearing in this embodiment can be provided in the form of a computer-readable non-transitory recording medium (Non-Transitory Computer-Readable Medium), can be provided in a manner that can be downloaded from an external server, or can be provided in a manner that allows the program to be started by an external computer and its functions to be implemented through a client terminal (so-called cloud computing).

[0028] Furthermore, in this embodiment, a "unit" may also include, for example, a combination of hardware resources implemented by a broad circuit and information processing specifically implemented by software using these hardware resources. Furthermore, in this embodiment, various information is processed, and this information is represented, for example, by physical values ​​representing voltage / current signal values, high / low signal values ​​as binary bit sets consisting of 0s and 1s, or quantum superpositions (so-called qubits), enabling communication and computation to be performed on a broad circuit.

[0029] In a broad sense, a circuit is a circuit implemented by appropriately combining at least circuits, circuit classes, processors, and memories. This includes application-specific integrated circuits (ASICs), programmable logic devices (for example, simple programmable logic devices (SPLDs), complex programmable logic devices (CPLDs), and field programmable gate arrays (FPGAs).

[0030] Figure 1 FIG is a diagram showing a conventional measurement method. Figure 1 As shown, for example, conventional heat flow sensors detect heat flow and cannot directly measure temperature. Therefore, for example, by installing a thermometer separately from the heat flow sensor, temperature information can be obtained. This allows deep temperature measurement. However, as mentioned above, a separate thermometer is required. Furthermore, if the heat flow sensor and thermometer are installed at different locations, the temperature Ta at the heat flow sensor's location differs from the temperature Tb at the thermometer's location, potentially leading to a larger error.

[0031] Therefore, in the device of this embodiment, the system using the device, and the method using the device or system, the heat flow sensor temperature Ta is estimated by measuring the resistance value of the heat flow sensor (element) itself and utilizing the correlation between the heat flow sensor temperature and the resistance value. This allows temperature information from the heat flow sensor to be obtained without the need for a thermometer, without incurring the aforementioned errors. This also allows for device miniaturization.

[0032] This embodiment is described. From the perspective of responsiveness, the heat flow sensor (an example of a device) of this embodiment is preferably a heat flow sensor based on transverse thermoelectric effects such as a thin film anomalous Nernst effect and the spin Seebeck effect. The element (thermoelectric conversion element) of the heat flow sensor (i.e., thermoelectric conversion device) can be composed of a compound that exhibits an anomalous Nernst effect. The element can be, for example, composed of a topological ferromagnet or a topological antiferromagnet known as a Weyl semimetal, or a ferrimagnet, or a combination thereof. The topological ferromagnet can be a metal composed of Co2MnGa or Co2MnX (X is any one of Si, Ge, Sn, Al, and Ga), or an alloy of a known topological ferromagnet such as a metal represented by Fe3X (X is a stoichiometric or non-stoichiometric composition of a typical element or transition element such as Al, Ga). In addition, the topological antiferromagnet can be a known topological antiferromagnet such as Mn3X (X is an element or compound thereof selected from Sn, Ge, Ga, Pt, Ir, Rh). The compound constituting the element is, for example, composed of an alloy with a transition metal, and the alloy may also be a compound having a crystal structure with a cage lattice plane formed by a transition metal, showing an anomalous Nernst effect. The composition ratio of the alloy constituting a topological ferromagnet or a topological antiferromagnet is not necessarily the stoichiometric composition ratio as described above, and the composition ratio is not particularly limited, as long as it partially has a stoichiometric structure (such as a DO3 type crystal structure, a B2 type crystal structure, etc.). Ferrimagnetics are not particularly limited either, as long as they show an anomalous Nernst effect. There is no particular limitation on the structure of the element, and known structures can be utilized. In addition, the element of the present embodiment can be provided by sputtering, vapor deposition, MBE, plating, sintering, printing, pasting, etc.

[0033] Figure 2 FIG is a diagram showing an example of a heat flow sensor. Figure 2 As shown, the heat flow sensor (an example of a device) of the present embodiment is provided on a substrate. A processor such as a microcomputer or FPGA, not shown in the figure, may be provided in the heat flow sensor, or they may be provided outside the heat flow sensor. The processor obtains information on the resistance value of the heat flow sensor measured by known means. The inventors have clarified that the resistance value of the heat flow sensor has the characteristic of being a weak linear function with respect to temperature. Therefore, by measuring the resistance value of the heat flow sensor, the temperature of the heat flow sensor can be estimated. Thus, the heat flow sensor of the present embodiment can obtain not only the value of the heat flow, but also the temperature of the heat flow sensor. In addition, the temperature of the heat flow sensor mentioned here is the internal temperature of the heat flow sensor. The temperature of the upper surface and / or lower surface of the heat flow sensor can be obtained by other means.

[0034] <Measurement System 1>

[0035] Reference Figure 3 and Figure 4 An example of a measuring device for measuring the heat flow and temperature of a measurement object as described above and a measuring system including the measuring device will be described.

[0036] Figure 3 1 is a diagram schematically showing an example of the appearance of the measurement system 1 . Figure 4 1 is a diagram showing an example of more detailed components of the measurement system 1. The measurement system 1 includes a measurement device 2 and a user terminal 4.

[0037] The measurement device 2 measures the heat flow and temperature of the measurement site P1 of the measurement object OB1. The user terminal 4 acquires the measurement results of the measurement device 2 and performs information processing based on the acquired measurement results. The information processing performed by the user terminal 4 can be any information processing as long as it is based on the heat flow and temperature of the measurement object OB1 (for example, calculation of the deep temperature).

[0038] <Measurement Device 2>

[0039] The measuring device 2 includes a thermoelectric conversion device 22 and a measuring unit 23 .

[0040] <Thermoelectric Conversion Device 22>

[0041] The thermoelectric conversion device 22 is a device that converts heat flow into electricity and is an example of the aforementioned heat flow sensor. The thermoelectric conversion device 22 is configured to be placed in close contact with the measurement site P1 of the measurement object OB1. It generates a temperature gradient J1 by exchanging heat with the measurement object OB1. Heat exchange includes the inflow of heat from the measurement object OB1 into the thermoelectric conversion device 22 and the outflow of heat from the thermoelectric conversion device 22 to the measurement object OB1. The thermoelectric conversion device 22 is configured to output a thermoelectromotive force V due to the temperature gradient J1. Furthermore, the measurement object OB1 can be any object. The measurement object OB1 is not limited to solid matter; it can be any fluid, such as a liquid or gas, as long as the thermoelectric conversion device 22 can be mounted. The thermoelectric conversion device 22 includes a substrate 21.

[0042] <Substrate 21>

[0043] The substrate 21 is configured to exchange heat with the measurement site P1 of the measurement object OB1. This allows heat to flow from the measurement site P1 of the measurement object OB1 to the substrate 21, or heat to flow from the measurement site P1 of the measurement object OB1 to the substrate 21. For example, the substrate 21 is in direct contact with the measurement object OB1, allowing heat from the measurement object OB1 to be directly exchanged without passing through other components. This can reduce measurement errors in the temperature gradient J1 described later. Alternatively, the substrate 21 can be in indirect contact with the measurement object OB1 via an intermediate component such as a membrane, thin film, or coating material. This allows the thermoelectric conversion device 22 to be mounted on a wider variety of measurement objects OB1.

[0044] The substrate 21 in this embodiment is a planar printed circuit board. The specific form of the substrate 21 is not limited to this and can be any material. For example, it can be a substrate made of a semiconductor or insulator such as silicon or MgO, or the surface of the measurement object OB1 itself. Furthermore, the substrate 21 can be, for example, a metal plate or a printed circuit board that has undergone surface treatment such as metal coating. The substrate 21 has two surfaces: a contact surface 211 and a surface 212.

[0045] <Contact Surface 211>

[0046] The contact surface 211 is configured to be in contact with the measurement site P1 of the measurement object OB1. Thus, heat from the measurement site P1 of the measurement object OB1 is conducted to the substrate 21 via the contact surface 211. In this embodiment, the contact surface 211 is a continuous single surface.

[0047] <Surface 212>

[0048] The surface 212 is the surface that becomes the front face when the contact surface 211 of the thermoelectric conversion device 22 is brought into close contact with the measurement site P1 of the measurement object OB1. That is, the surface 212 is located opposite the contact surface 211 in the thickness direction of the substrate 21. In this embodiment, the surface 212 is a single, continuous surface.

[0049] The shape of the substrate 21 is arbitrary and is not limited to a flat surface. It may also include a curved surface or an inflection point. The substrate 21 may also be a so-called flexible substrate that is deformable. This makes it easier to measure the temperature gradient J1 of the measurement object OB1 having a curved surface.

[0050] The temperature gradient J1 includes at least a component Jz perpendicular to the surface 212. The perpendicular component Jz of the temperature gradient J1 is the component of the temperature gradient J1 perpendicular to the surface 212. In the case where the substrate 21 has a curved surface, the direction perpendicular to the surface 212 can be defined by the local normal direction of the curved surface. Therefore, the direction perpendicular to the surface 212 is not limited to being the same across the entire surface 212.

[0051] In this embodiment, the temperature gradient J1 may include an in-plane component Jxy. The in-plane component Jxy may be caused by thermal deviations or thermal conduction deviations within the plane of the substrate 21. The in-plane component Jxy is the component of the temperature gradient J1 that is parallel to the surface 212. In the case where the substrate 21 has a curved surface, for example, the direction parallel to the surface 212 can be defined as a direction perpendicular to the local normal direction of the curved surface. Therefore, the direction parallel to the surface 212 is not limited to being the same across the entire surface 212.

[0052] Furthermore, "perpendicular" to a certain direction or plane is not limited to being completely perpendicular to that direction or plane, and may include, for example, situations where the direction or plane is perpendicular within a range of permissible errors in dimensions, etc. Similarly, "parallel" to a certain direction or plane is not limited to being completely perpendicular to that direction or plane.

[0053] <Thermoelectric EMF V>

[0054] like Figure 2 As shown, the thermoelectromotive force V may include a first electromotive force V1 and a second electromotive force V2. The first electromotive force V1 is a thermoelectromotive force generated by a first thermoelectric conversion effect based on a perpendicular component Jz of the temperature gradient J1 relative to the surface 212. The first thermoelectric conversion effect has a different manifestation mechanism from the Seebeck effect, for example, through non-diagonal components in the thermoelectric tensor, such as the anomalous Nernst effect and the spin Seebeck effect.

[0055] The first electromotive force V1 is represented, for example, by a quantity dependent on a physical variable corresponding to the magnetic field in the off-diagonal components of the thermoelectric tensor of the thermoelectric conversion device 22. The first electromotive force V1 is antisymmetric with respect to the magnetic field, symmetric with respect to the in-plane component Jxy, and antisymmetric with respect to the perpendicular component Jz. The direction of the first electromotive force V1 is substantially perpendicular to the perpendicular component Jz.

[0056] The second electromotive force V2 is a thermoelectric electromotive force generated by a second thermoelectric conversion effect based on the in-plane component Jxy of the temperature gradient J1 relative to the surface 212. The second thermoelectric conversion effect has a different performance mechanism from the first thermoelectric conversion effect and is expressed by a diagonal component in a thermoelectric tensor such as the Seebeck effect. The second electromotive force V2 is represented, for example, by a quantity in the diagonal component of the thermoelectric tensor of the thermoelectric conversion device 22 that depends on a physical variable corresponding to the temperature gradient J1. The second electromotive force V2 is a quantity that is antisymmetric with respect to the temperature gradient. The direction of the second electromotive force V2 is roughly parallel to the direction of the in-plane component Jxy. When the in-plane component Jxy is parallel to the direction of the first electromotive force V1, the direction of the second electromotive force V2 is roughly parallel to the direction of the first electromotive force V1.

[0057] Reference Figure 5 The thermoelectric conversion device 22 will be described in detail.

[0058] Figure 5 FIG is an enlarged view showing the thermoelectric conversion device 22. Figure 5 As shown, the thermoelectric conversion device 22 includes a plurality of thermoelectric conversion elements 221. The thermoelectric conversion device 22 further includes a first conductor portion 222 as a conductor portion, a second conductor portion 223 as a conductor portion, and at least a pair of measurement terminals 224.

[0059] The substrate 21 is provided to insulate the measurement object OB1 from the thermoelectric conversion element 221. The structure of the substrate 21 is arbitrary as long as the substrate 21 is configured to insulate the measurement object OB1 from the thermoelectric conversion element 221, the first conductor portion 222, the second conductor portion 223, and the measurement terminal 224 and to allow heat to flow from the measurement object OB1 to the thermoelectric conversion element 221.

[0060] <Thermoelectric Conversion Element 221>

[0061] The thermoelectric conversion elements 221 are each formed to extend in the direction in which the first electromotive force V1 is generated. Specifically, the thermoelectric conversion elements 221 extend in the direction in which the anomalous Nernst effect based on the vertical component Jz is maximized. The thermoelectric conversion elements 221 of this embodiment extend linearly in the direction in which the first electromotive force V1 is generated. The shape of the thermoelectric conversion elements 221 is not limited to this, and may include, for example, a curved portion. The number of thermoelectric conversion elements 221 included in the thermoelectric conversion device 22 is four in this embodiment. In addition, the number of thermoelectric conversion elements 221 included in one thermoelectric conversion device 22 is not limited to this and is arbitrary.

[0062] <First Conductor 222, Second Conductor 223>

[0063] The first conductor portion 222 and the second conductor portion 223 are configured to connect the thermoelectric conversion devices 22 in series to amplify the first electromotive force V1 of each of the thermoelectric conversion elements 221 of the thermoelectric conversion devices 22. Regarding the first conductor portion 222 and the second conductor portion 223, the first conductor portion 222 is disposed between the two thermoelectric conversion elements 221 and extends in a direction substantially the same as the direction in which these thermoelectric conversion elements 221 extend.

[0064] Second conductor portion 223 extends within surface 212 in a direction perpendicular to first conductor portion 222, connecting the ends of thermoelectric conversion element 221 and first conductor portion 222. Thus, each thermoelectric conversion device 22 is configured as a meandering structure comprising alternating thermoelectric conversion elements 221 and first conductor portions 222. The connection method between first conductor portion 222 and second conductor portion 223 is arbitrary.

[0065] For example, the conductor portion may be arranged so as to linearly connect the ends of two adjacent thermoelectric conversion elements 221 in series. In short, the first conductor portion 222 and the second conductor portion 223 are arbitrary, as long as they are configured to connect the thermoelectric conversion elements 221 included in the thermoelectric conversion device 22 so as to mutually reinforce the thermoelectromotive force V generated by the thermoelectric conversion elements 221. Furthermore, the first conductor portion 222 and the second conductor portion 223 can be mounted by any method, such as metal sputtering onto the substrate 21 or connecting the ends of the thermoelectric conversion elements 221 with wires.

[0066] <Measurement Terminal 224>

[0067] The measurement terminal 224 is configured to measure the thermoelectromotive force V. Specifically, the measurement terminal 224 is configured to measure the thermoelectromotive force V output from the thermoelectric conversion element 221 connected in series via the first conductor portion 222 and the second conductor portion 223. In this embodiment, the measurement terminals 224 of the thermoelectric conversion device 22 are electrically insulated from each other. This reduces the contact resistance of the thermoelectric conversion device 22 and improves the accuracy of measuring the thermoelectromotive force V. The measurement terminal 224 can be a physical connection terminal such as a pin, a tab, or a strip terminal, or it can be a virtual terminal that serves as the measurement point for the thermoelectromotive force V.

[0068] Here, the physical properties (specifically, magnetic properties) of the thermoelectric conversion element 221 will be described. The thermoelectric conversion element 221 is configured to exhibit the anomalous Nernst effect.

[0069] The thermoelectric conversion element 221 of this embodiment includes a magnet having a magnetic structure capable of exhibiting the anomalous Nernst effect. The magnetic structure can be an antiferromagnetic structure, a tilted antiferromagnetic structure, a ferrimagnetic structure, or a ferromagnetic structure, as long as it can exhibit the anomalous Nernst effect. An antiferromagnetic magnetic order with spontaneous magnetization is also called a weak ferromagnetic structure. The magnetic structure of the magnet includes at least one of a first magnetic structure and a second magnetic structure that is time-reversal symmetric with respect to the first magnetic structure.

[0070] In such a magnetic structure, spontaneous magnetization occurs along the easy magnetization axis. When the magnet is a ferromagnet or a ferrimagnet, the easy magnetization axis is approximately parallel to the easy spin axis. On the other hand, when the magnet is a tilt antiferromagnet, the easy magnetization axis extends in a direction different from the easy spin axis (e.g., a perpendicular direction). In this embodiment, the thermoelectric conversion element 221 includes a ferrimagnet, and its easy magnetization axis is along the surface 212. In other words, the easy magnetization axis extends in a direction different from the direction in which the thermoelectric conversion element 221 extends and in a direction approximately parallel to the surface 212.

[0071] The thermoelectric conversion element 221 can be made of any material as long as it contains a substance that can exhibit the anomalous Nernst effect. Compositions that can exhibit such an anomalous Nernst effect include, for example, Mn3Sn, Mn3Ge, Mn3Ga, Co2MnGa, Fe3Al, Fe3Ga, Fe2Sn, or alloys, element substitutions, or mixtures thereof. The mechanism of the anomalous Nernst effect is arbitrary, and for example, it can be caused by an antiferromagnetic magnetic structure with a non-collinear spin structure. In this case, there is a tendency for the Nernst coefficient to be larger than other manifestation mechanisms, so higher-precision measurements and miniaturization of the element become easier.

[0072] In addition, the thermoelectric conversion element 221 can be implemented in the form of a polycrystal of these materials, or in the form of a single crystal. In addition, the crystalline domain of the single crystal only needs to be uniform to the extent that the asymmetric physical properties caused by the reduction of symmetry as the magnetic order is manifested can be observed. The thermoelectric conversion element 221 of this embodiment is formed into a thin film having a thickness in a direction perpendicular to the surface 212. The above-mentioned easy magnetization axis and easy spin axis easily extend in the direction within the plane of the surface 212 because the contribution of thin film formation to magnetic anisotropy is greater than other factors. Therefore, it is easy to appropriately adjust the direction of the first electromotive force V1 generated by the anomalous Nernst effect.

[0073] The thickness of the thermoelectric conversion element 221 is arbitrary, specifically, for example, 5, 6, 7, 8, 9, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700, 800, 900 nm, and may be within a range between any two of the numerical values ​​exemplified here. In addition, it may be outside the range of these numerical values.

[0074] In addition, the method for mounting the thermoelectric conversion element 221 on the substrate 21 is arbitrary, and any method can be used, such as physical vapor deposition methods such as sputtering and ion plating, plating, chemical vapor deposition, molecular beam epitaxy (MBE), sintering of powders of the above-mentioned compounds, various printing methods such as inkjet printing using droplets formed by dissolving the above-mentioned compounds, and three-dimensional printing using the above-mentioned compounds. The method for mounting the thermoelectric conversion element 221 can also be the same as the method for mounting the first conductor portion 222 and the second conductor portion 223. As a result, the manufacturing process can be simplified. The thermoelectric conversion element 221 included in a thermoelectric conversion device 22 can include the same magnet or different magnets.

[0075] In the thermoelectric conversion device 22, as described above, the thermoelectric conversion element 221, the first conductor 222, and the second conductor 223 form a circuit C1 connecting one measurement terminal 224 to the other measurement terminal 224. Circuit C1 is not closed, or what is called an open circuit. Circuit C1 is connected to the measurement unit 23, which will be described later.

[0076] <Measurement Unit 23>

[0077] Measuring unit 23 is configured to measure the heat flow and temperature of measurement object OB1. Measuring unit 23 is connected to circuit C1, forming circuit C2, which partially includes circuit C1, and circuit C3, which also partially includes circuit C1. Measuring unit 23 includes a heat flow measuring unit 24 that forms circuit C2, and a temperature measuring unit 25 that forms circuit C3.

[0078] <Heat Flow Measuring Unit 24>

[0079] The heat flow measuring unit 24 is configured to measure a heat flow generated at a portion of the measurement object OB1 where the thermoelectric conversion device 22 is provided. The heat flow measuring unit 24 includes a heat flow signal measuring unit 241 .

[0080] <Heat Flow Signal Measuring Unit 241>

[0081] Heat flow signal measuring unit 241 is connected to measurement terminal 224 via wiring, forming part of circuit C2. Heat flow signal measuring unit 241 measures a value (voltage, current, etc.) associated with an electrical signal represented by a current flowing through circuit C2 due to the thermoelectromotive force V generated by thermoelectric conversion element 221. Heat flow signal measuring unit 241 is configured, for example, to measure the thermoelectromotive force V that generates this electrical signal.

[0082] The heat flow signal measuring unit 241 may include, for example, a voltmeter capable of measuring the thermoelectromotive force V. Furthermore, the heat flow signal measuring unit 241 is not limited to a voltmeter and may also be implemented using various measuring devices such as an ammeter or an LCR meter. Furthermore, since the current flowing due to the thermoelectromotive force V is very small, the heat flow signal measuring unit 241 may also include an amplifier to amplify the electrical signal represented by the small current. Furthermore, the heat flow signal measuring unit 241 may also include passive components or an analog-to-digital converter, as needed.

[0083] The heat flow signal measuring unit 241 calculates the heat flow based on the measured thermoelectromotive force V and outputs the calculated heat flow value as a measurement result. The heat flow signal measuring unit 241 has a communication function and is connected to the user terminal 4 via wiring. The heat flow signal measuring unit 241 outputs (i.e., transmits) the measurement results and the like to the user terminal 4. The heat flow signal measuring unit 241 repeatedly performs heat flow measurement and outputs the measurement results at predetermined time intervals, for example.

[0084] <Temperature Measuring Unit 25>

[0085] As described above, the temperature measuring unit 25 is configured to measure the internal temperature of the thermoelectric conversion device 22 (heat flow sensor). Since the thermoelectric conversion device 22 is extremely thin, the internal temperature of the thermoelectric conversion device 22 is close to the surface temperature of the measurement site P1 of the measurement object OB1 and can be regarded as the temperature of the measurement site P1 of the measurement object OB1.

[0086] The temperature measuring unit 25 includes a temperature signal measuring unit 251, a switch unit 253, and a control unit 254. The temperature signal measuring unit 251 is connected to the circuit C2 via wiring, forming part of a circuit C3 that includes parts of the circuit C1 and the circuit C2. Circuit C2, which includes the heat flow signal measuring unit 241, and circuit C3, which includes the temperature signal measuring unit 251, both include the circuit C1 and form a parallel circuit.

[0087] <Temperature Signal Measuring Unit 251>

[0088] The temperature signal measuring unit 251 includes a power supply unit 252, and measures a value related to the electrical signal represented by the sensing current flowing through the circuit C3 based on the current (hereinafter referred to as the "sensing current") flowing out of the power supply unit 252 to the circuit C3. The temperature signal measuring unit 251 measures the resistance of the circuit C3 by a method capable of measuring extremely small resistances (for example, a four-terminal method). The main resistance in the circuit C3 is the resistance generated by the thermoelectric conversion element 221. In addition, the temperature signal measuring unit 251 can also measure the resistance by other methods, as long as the method is capable of measuring extremely small resistances. In addition, the temperature signal measuring unit 251 can also be equipped with passive components, amplifiers, or analog-to-digital converters, etc. as needed.

[0089] <Switch Section 253>

[0090] The switch unit 253 is provided in a path that is not shared with the circuit C3 in the path forming the circuit C2, and switches between a state where current flows (on) and a state where current does not flow (off). The "current" referred to here includes both the current flowing due to the thermoelectromotive force V and the sense current flowing out of the temperature signal measuring unit 251. In other words, when the switch unit 253 is on, the sense current flowing out of the temperature signal measuring unit 251 may flow not only through the circuit C3 but also through the circuit C2. Therefore, by turning off the switch unit 253, the sense current does not flow through the circuit C2. The switch unit 253 is controlled to be on / off by the control unit 254 described later.

[0091] <Control Unit 254>

[0092] The control unit 254 includes a processor, memory, and other components, and controls the operation of each component of the temperature measuring unit 25. The control unit 254 is electrically connected to the temperature signal measuring unit 251 and the switch unit 253, and sends control signals to control their operation. Furthermore, the control signal output from the control unit 254 is prevented from flowing through circuits C2 and C3. For example, the control unit 254 controls the switch unit 253 to prevent current from flowing through circuit C2 and controls the temperature signal measuring unit 251 to cause a sensed current to flow through circuit C3. The control unit 254 then causes the temperature signal measuring unit 251 to measure the resistance of circuit C3 (i.e., the resistance of the thermoelectric conversion element 221) and obtains the measurement result.

[0093] The control unit 254 calculates the internal temperature of the thermoelectric conversion device 22 based on the acquired resistance value. The control unit 254 stores, for example, Figure 2 The temperature corresponding to the measured resistance value is calculated using the equation for the relationship between resistance and temperature shown in FIG. The control unit 254 outputs the internal temperature value thus calculated as the measurement result. The control unit 254 is connected to the user terminal 4 via wiring, for example, and outputs the measurement result to the user terminal 4. The control unit 254 repeatedly performs internal temperature measurement and outputs the measurement result at predetermined time intervals, for example.

[0094] Alternatively, one or both of the temperature calculation and the output of the measurement result may be performed by the temperature signal measuring unit 251. Alternatively, the temperature signal measuring unit 251 and the control unit 254 may be integrated to centrally perform the operations of each unit.

[0095] Furthermore, the control unit 254 may be further connected to the heat flow signal measuring unit 241 via wiring to control the heat flow measurement operation performed by the heat flow signal measuring unit 241. For example, when the temperature signal measuring unit 251 is flowing a sense current to measure the temperature, the control unit 254 controls the switch unit 253 to be open, so that the heat flow signal measuring unit 241 does not measure the heat flow. When the heat flow signal measuring unit 241 is measuring the heat flow, the control unit 254 controls the switch unit 253 to be closed, so that the temperature signal measuring unit 251 does not flow a sense current and does not measure the temperature.

[0096] When measuring heat flow and temperature simultaneously, the sense current flowing from temperature signal measuring unit 251 may also flow through circuit C2. Furthermore, the sense current may generate heat in thermoelectric converter element 221, making it difficult to accurately measure heat flow. As described above, by controlling the measurement period for heat flow and temperature separately, it is possible to suppress inaccurate heat flow measurement compared to when measuring heat flow and temperature simultaneously.

[0097] In addition, the control method of the temperature signal measuring unit 251 and the heat flow signal measuring unit 241 is not limited to the above. The control unit 254 may also perform control so that the temperature measurement time of the temperature signal measuring unit 251 is staggered with the heat flow measurement time of the heat flow signal measuring unit 241. In this case, the switch unit 253 may be maintained in the on state, or the switch unit 253 may not be provided. In addition, the control unit 254 may also perform control so that the heat flow measurement interval of the heat flow signal measuring unit 241 is shorter than the temperature measurement interval of the temperature signal measuring unit 251. In this case, the measurement of temperature and heat flow sometimes overlap, but there must be a period when only heat flow is measured. Therefore, for example, by using only the measurement results of the period when only heat flow is measured by the user terminal 4, information processing based on accurate heat flow measurement results can be performed.

[0098] As described above, the measurement device 2 includes a thermoelectric conversion device 22, a heat flow measurement unit 24, and a temperature measurement unit 25. The thermoelectric conversion device 22 is an example of a thermoelectric conversion circuit that converts heat into electricity. The thermoelectric conversion device 22 includes a thermoelectric conversion element 221, which is configured to generate a thermoelectromotive force V due to a temperature gradient J1 generated by heat exchange with the measurement object OB1. Furthermore, the heat flow measurement unit 24 is configured to measure the heat flow generated at the measurement site P1 of the measurement object OB1 based on the electrical signal generated in the thermoelectric conversion device 22 by the thermoelectromotive force V.

[0099] Furthermore, the temperature measuring unit 25 causes a second current to flow through at least a portion of the thermoelectric conversion device 22 along the path along which the first current generated by the thermoelectromotive force V flows, thereby measuring the resistance of at least a portion of the thermoelectric conversion device 22. The path referred to here is the current path formed by the circuit C1. The first current is the current flowing through the circuit C1 due to the thermoelectromotive force V, and the second current is the sense current supplied from the power supply unit 252 of the temperature signal measuring unit 251 to the circuit C1.

[0100] And, as Figure 5 As shown, the temperature measuring unit 25 measures the resistance of the thermoelectric conversion element 221 connected in series in the circuit C1. The temperature measuring unit 25 is configured to measure the temperature of the measurement object OB1 based on the measured resistance. The temperature measuring unit 25 measures the temperature value based on the following contents: the measured resistance value; and the value indicating the temperature. Figure 2 The temperature thus measured is close to the surface temperature of the measurement site P1 of the measurement object OB1, that is, the site where the thermoelectric conversion device 22 is installed. Therefore, the temperature measured by the temperature measuring unit 25 can be regarded as the temperature of the measurement object OB1.

[0101] In addition, Figure 4In the examples shown in FIG. 1 , a sense current is passed through the entire circuit C1 formed by the thermoelectric conversion device 22 to measure the resistance of the entire thermoelectric conversion device 22. However, this is not limiting. Alternatively, a sense current may be passed through only a portion of the measurement path in circuit C1 to measure the resistance of that measurement path. However, the measurement path includes at least one thermoelectric conversion element 221. In this case, an equation representing the relationship between resistance and temperature in the measurement path can be developed in advance through experiments, etc., and the temperature measuring unit 25 can measure the temperature based on this equation.

[0102] In addition, Figure 4 In the example of , etc., the heat flow measuring unit 24 and the temperature measuring unit 25 are separated, but they can also be integrated into one measuring unit. In this case, the passive components, amplifiers or analog-to-digital converters etc. of the heat flow signal measuring unit 241 and the temperature signal measuring unit 251 can be shared. In addition, it can be configured so that one or both of the heat flow signal measuring unit 241 and the temperature signal measuring unit 251 have a switch unit 253. In addition, it can be configured so that ASIC, FPGA or CPU etc. control these measuring units. In addition, Figure 4 The system is merely a system for detecting the output voltage and resistance value of the heat flow sensor (thermoelectric conversion device 22). As long as these values ​​can be measured, the heat flow (heat flux) and temperature can be measured, so other measurement systems may also be used.

[0103] This configuration enables measurement of heat flow and temperature at the same location. In the above example, measurement system 1, with only one thermoelectric conversion device 22, can measure the heat flow and temperature at measurement location P1 of measurement object OB1. Furthermore, thermoelectric conversion element 221 is configured to generate a thermoelectromotive force V based on the anomalous Nernst effect. This configuration improves responsiveness compared to, for example, using a thermoelectric sensor to measure heat flow.

[0104] <User Terminal 4>

[0105] The user terminal 4 is configured to execute various information processing described later based on the measurement results of the measurement device 20. The details of the user terminal 4 will be described later together with the information processing.

[0106] Figure 6 4 is a block diagram showing the hardware configuration of the user terminal 4. The user terminal 4 includes a communication bus 40, a communication unit 41, a storage unit 42, a processor 43, a display unit 44, and an input unit 45. These components are electrically connected via the communication bus 40 inside the user terminal 4.

[0107] <Communication Department 41>

[0108] The communication unit 41 preferably utilizes a wired communication method such as USB, IEEE 1394, Thunderbolt (registered trademark), or wired LAN network communication. However, it may also include wireless LAN network communication, mobile communication such as 3G / LTE / 5G, and BLUETOOTH (registered trademark) communication, as needed. Specifically, it is more preferably implemented as a combination of these multiple communication methods. In other words, the user terminal 4 can also communicate various information externally via the communication unit 41 and the network.

[0109] <Storage Unit 42>

[0110] The storage unit 42 stores the various information defined above. This can be implemented, for example, as a storage device such as a solid-state drive (SSD) that stores various programs related to the user terminal 4 and executed by the processor 43, or as a memory such as a random access memory (RAM) that stores temporarily required information (independent variables, arrays, etc.) related to program operations. The storage unit 42 stores various programs related to the user terminal 4 and variables that are executed by the processor 43.

[0111] <Processor 43>

[0112] The processor 43 processes / controls the overall actions associated with the user terminal 4. The processor 43 is, for example, a central processing unit (CPU) not shown in the figure. The processor 43 implements various functions related to the user terminal 4 by reading the prescribed program stored in the storage unit 42. That is, the information processing performed by the software stored in the storage unit 42 is specifically implemented by the processor 43 as an example of hardware, and can be executed in the form of each functional unit included in the processor 43. These will be described in further detail in the next section. In addition, the processor 43 is not limited to a single one, and can also be implemented in a manner with multiple processors 43 for each function. In addition, it can also be a combination of them.

[0113] <Display Unit 44>

[0114] The display unit 44 may be included in the housing of the user terminal 4 or may be external. The display unit 44 displays a graphical user interface (GUI) screen that the user can operate. For example, it is preferably implemented using a display device such as a CRT display, a liquid crystal display, an organic EL display, or a plasma display, depending on the type of user terminal 4.

[0115] <Input Unit 45>

[0116] The input unit 45 may be included in the housing of the user terminal 4 or may be external. For example, the input unit 45 may be integrated with the display unit 44 and implemented as a touch panel. If it is a touch panel, the user can input operations such as clicking and sliding. Of course, a switch button, a mouse, a QWERTY keyboard, etc. may also be used instead of a touch panel. In other words, the input unit 45 receives operational input from the user. This input is transmitted as a command signal via the communication bus 40 to the processor 43, which then performs the specified control and calculations as needed.

[0117] The measurement system 1 including the user terminal 4 is an information processing system including a measurement device 20 and at least one processor (processor 43). The processor is configured to execute processing based on the temperature of the measurement object measured by the temperature measuring unit 25 and the heat flow measured by the heat flow measuring unit 24.

[0118] Processing based on temperature and heat flow, for example, includes measuring the deep temperature of the measurement object OB1. Furthermore, processing based on temperature and heat flow also includes information processing such as material analysis when the measurement object is a material, controlling the behavior of a processing device when the measurement object is a processing object, or controlling the behavior of a drive device when the measurement object is a drive device. This configuration enables higher-precision information processing compared to processing based on heat flow and temperature at different locations of the measurement object.

[0119] <Variation: Sensing Current in Two Directions>

[0120] A modification of this embodiment will be described.

[0121] Figure 7 is a diagram showing an example of measurement error. Figure 7 As shown, when measuring the resistance value of the heat flow sensor (thermoelectric conversion device 22 ), a voltage generated by heat flow when heat flows therethrough is output, and thus a resistance error may occur.

[0122] Figure 8 and Figure 9 is a diagram showing an example of a measurement method. Figure 8 and Figure 9 As shown in FIG. 1 , by measuring the resistance with the polarity reversed, the output voltage caused by the heat flow can be eliminated. Specifically, the sense current used to measure the resistance value of the heat flow sensor (thermoelectric conversion device 22) is as follows: Figure 8 The first direction D1 and Figure 9 As shown in the second direction D2, the outputs are opposite, so that ΔVres+ΔVth(heat)=Va... In the case of the first direction D1

[0123] -ΔVres+ΔVth(hot)=Vb... In the case of the second direction D2 Va-Vb=ΔVres+ΔVth-(-ΔVres+ΔVth)=2ΔVres

[0124] Therefore, the true resistance value can be obtained.

[0125] As described above, temperature measuring unit 25 is configured to measure the resistance of thermoelectric conversion device 22 based on the difference between the voltage measured when the second current (sense current) flows along the first direction D1 of the path and the voltage measured when the second current (sense current) flows along the second direction D2 opposite to first direction D1. This configuration eliminates the aforementioned resistance error, improving temperature measurement accuracy compared to a case where resistance is measured based solely on the sense current flowing in one direction of the path.

[0126] <Variation: Periodic Sensing Current>

[0127] Other modifications of this embodiment will be described.

[0128] Figure 10 and Figure 11 is a diagram showing an example of a sense current. Figure 10 In the example shown, the sensing current used to measure the resistance value has a periodicity. This allows the signal caused by the heat flow and the signal caused by the resistance to be separated in terms of frequency. For example, when performing frequency analysis, Figure 11 As shown, Va = ΔVres × sinwt + ΔVres_const + ΔVth

[0129] By extracting the component of angular frequency w, the resistance value can be obtained.

[0130] In addition, in this frequency analysis, methods such as FFT (Fast Fourier Transformation), lock-in amplifier, and heterodyne can be used as appropriate. For example, when analyzing by a lock-in amplifier (multiplying the frequency-driven signal by the same frequency),

[0131] Va=(ΔVres×sinwt+ΔVres_const+ΔVth)×sinwt

[0132] =A×sinwt+B×sin2wt+0.5×ΔVres

[0133] (where A and B are constants).

[0134] In this case, 0.5×ΔVres can be extracted by performing signal processing such as a low-pass filter that can remove the component of A×sinwt+B×sin2wt on the above-mentioned signal.

[0135] As described above, the temperature measuring unit 25 is configured to separate a first voltage value based on the thermoelectromotive force V and a second voltage value caused by the resistance of the element (thermoelectric conversion element 221) from the measured value of the voltage when a periodic current is allowed to flow as a second current (sensing current) through at least a portion of the thermoelectric conversion circuit (thermoelectric conversion device 22), and to measure the resistance based on the first voltage value. Figure 11 The "ΔVres_const+ΔVth" shown is an example of the first voltage value. Figure 11 The "ΔVres" shown is an example of the second voltage value. With this configuration, the influence of voltage fluctuations caused by heat flow can be eliminated from the temperature measurement, thereby improving the temperature measurement accuracy compared to a case where the voltage value is not separated.

[0136] <Modification: Correction of the Relationship between Resistance Value and Temperature>

[0137] In the case where there is a nonlinear relationship between the resistance value of the thermoelectric conversion circuit (or the resistance value of the measurement object path) and the temperature, correction can be performed using, for example, linear correction, a table (information that corresponds the resistance value to the temperature, or information that corresponds them to other parameters), a learning model, etc.

[0138] In this case, the temperature measuring unit 25 is configured to measure the temperature of the measurement object based on the resistance measured by passing a sense current and calibration information. The calibration information is information that corrects the relationship between the measured resistance and the temperature of the measurement object. Examples of the calibration information include a calibration program for linearity correction, a table that maps the relationship between resistance and temperature, or a learning model generated by having artificial intelligence learn this relationship. Using this calibration information, the temperature measuring unit 25 calibrates the nonlinear relationship between resistance and temperature to a linear relationship, and measures the temperature based on the resistance value. This configuration improves the accuracy of temperature measurement compared to a case where no calibration information is used.

[0139] <Modification: Surface Temperature>

[0140] As a further modification, there is the following structure in order to create a stable thermal space.

[0141] Figure 12 This is a diagram for explaining the measured temperature. Figure 12As shown, the temperature calculated based on the resistance value of the heat flow sensor (thermoelectric conversion device 22) is based on the resistance value of the heat flow sensor, so it can be estimated as the average temperature of the heat flow sensor. Furthermore, the electrical signal obtained from the heat flow sensor reveals the heat flow (i.e., the temperature gradient ΔT), allowing the temperatures above and below the heat flow sensor to be estimated. Specifically, heat flow sensor output = sensitivity × ΔT (the temperature difference between the upper and lower parts), so ΔT = heat flow sensor output / sensitivity.

[0142] Therefore, when the temperature of the lower part is higher than that of the upper part,

[0143] T(upper) = Tave (average temperature of heat flux sensor) - ΔT / 2

[0144] T(lower part)=Tave+ΔT / 2

[0145] When the temperature of the upper part is higher than that of the lower part,

[0146] T(upper) = Tave (average temperature of heat flux sensor) + ΔT / 2

[0147] T(lower part)=Tave-ΔT / 2.

[0148] As described above, the measuring device 20 further includes a temperature difference measuring unit configured to measure the temperature difference between the first surface (the surface on the contact surface 211 side) of the element (thermoelectric conversion element 221) facing the measurement target and the second surface (the surface on the surface 212 side) on the opposite side, based on the voltage generated in the thermoelectric conversion circuit (thermoelectric conversion device 22) by the thermoelectromotive force V. The temperature difference measuring unit may be provided separately from the heat flow measuring unit 24 and the temperature measuring unit 25, or either the heat flow measuring unit 24 or the temperature measuring unit 25 may also function as the temperature difference measuring unit.

[0149] In addition, the measuring device 20 is configured to measure the temperature of the first surface (contact surface 211) or the second surface (surface 212) based on the measured temperature and the measured temperature difference. In addition, the measuring device 20 can also measure the temperature of both the first surface and the second surface. The temperature measurement of the surface of these thermoelectric conversion elements 221 can be performed by the heat flow measurement unit 24 or the temperature measurement unit 25, or by a temperature difference measurement unit provided separately from them. The thermoelectric conversion element 221 itself is a very thin element, so as mentioned above, even the internal temperature of the thermoelectric conversion element 221 can be regarded as the temperature of the measurement part P1 of the measurement object OB1, but by using the above-mentioned temperature difference, a temperature with higher accuracy can be measured.

[0150] <Information Processing>

[0151] Information processing executed in the measurement system 1 will be described.

[0152] Figure 13 This is an activity diagram illustrating an example of an information processing flow. Furthermore, this information processing may include any exception processing not shown. Exception processing includes interrupting the information processing or omitting various steps. Selections and inputs made in this information processing may be based on user input or may be performed automatically without user input.

[0153] First, the measuring device 20 measures the thermoelectromotive force V generated by the thermoelectric conversion device 22 based on an electrical signal represented by the current flowing in the circuit C2 (activity A1). The measuring device 20 repeatedly measures the thermoelectromotive force V, for example, at predetermined time intervals. Next, the measuring device 20 calculates the value of the heat flow generated in the thermoelectric conversion device 22 based on the measured thermoelectromotive force V and outputs the calculated value as a heat flow measurement result (activity A2). The measuring device 20 outputs the heat flow measurement result, for example, to the user terminal 4.

[0154] Next, the measuring device 20 causes current to flow through the circuit C3 including the thermoelectric conversion device 22 (activity A3). For example, the measuring device 20 causes current to flow through the circuit C3 during a period when heat flow is not being measured. Next, the measuring device 20 measures the resistance of the thermoelectric conversion device 22 based on the electrical signal represented by the current flowing through the circuit C3 (activity A4). The measuring device 20 then calculates the temperature of the measurement object based on the measured resistance and outputs the calculated value as the temperature measurement result (activity A5). The measuring device 20 outputs the temperature measurement result, for example, to the user terminal 4.

[0155] The user terminal 4 then performs information processing corresponding to the heat flow and temperature of the measurement object based on the output heat flow and temperature measurement results (activity A6). The heat flow measurement processes in activities A1 and A2 and the temperature measurement processes in activities A3, A4, and A5 can be performed in reverse order or at different frequencies. Furthermore, activity A6 can be performed at a different frequency than the heat flow and temperature measurement frequency.

[0156] exist Figure 13 In the measurement method shown in the activity diagram, measurement system 1 is configured to perform a heat flow measurement step (activities A1 and A2), a current control step (activity A3), a resistance measurement step (activity A4), and a temperature measurement step (activity A5). In the heat flow measurement step, measurement system 1 measures the heat flow generated in measurement object OB1 based on an electrical signal generated by a thermoelectromotive force V in thermoelectric conversion device 22 (an example of a thermoelectric conversion circuit). Thermoelectric conversion device 22 includes a thermoelectric conversion element 221 (an example of an element). The thermoelectric conversion element 221 is configured to generate a thermoelectromotive force V due to a temperature gradient J1 generated by heat exchange with measurement object OB1.

[0157] Furthermore, in the current control step, the measurement system 1 controls the power supply unit 252 so that a second current (sense current) flows through at least a portion of the thermoelectric conversion device 22 along the path along which the first current generated by the thermoelectromotive force V flows. Furthermore, in the resistance measurement step, the measurement system 1 measures the resistance of at least a portion of the thermoelectric conversion device 22 using the second current. Furthermore, in the temperature measurement step, the measurement system 1 measures the temperature of the measurement object OB1 based on the measured resistance. This allows for measurement of both heat flow and temperature for a measurement object such as the thermoelectric conversion circuit 22, which undergoes heat exchange. Therefore, a single thermoelectric conversion circuit can measure both heat flow and temperature at the same portion of the measurement object.

[0158] <Other Modifications>

[0159] The above-described embodiment of the measurement system 1 is merely an example and is not intended to be limiting. For example, the measurement device 20 and the user terminal 4 may be separate devices, but they may also be integrated. Furthermore, the measurement device 20 may perform the information processing performed by the user terminal 4, and the user terminal 4 may perform the information processing performed by the measurement device 20 (such as heat flow calculation or temperature calculation). Furthermore, the measurement device 20 and the user terminal 4 may be configured to enable wireless communication.

[0160] The calculations (heat flow calculations or temperature calculations, etc.) performed by the measurement system 1 are not limited to calculations using digital signals and may also be calculations using analog circuits such as adder circuits, or a combination thereof. Furthermore, the various components of the measurement device 20 (such as the thermoelectric conversion device 22, the heat flow measurement unit 24, and the temperature measurement unit 25) may be arranged on the same substrate.

[0161] Information processing performed by external devices (e.g., user terminal 4) of the measurement device 20 can be performed locally or in the cloud. Cloud-based external devices can provide the aforementioned functions and processing, for example, through SaaS (Software as a Service) or cloud computing. Furthermore, multiple external devices can be used to perform the various storage and control functions performed by the measurement device 20 and user terminal 4. Specifically, various information and programs can be distributed across multiple external devices using blockchain technology or other means.

[0162] The above embodiment is not limited to the measurement system 1, and may also be an information processing method or an information processing program. The information processing method includes the steps of the measurement system 1. The information processing program causes at least one computer to execute the steps of the measurement system 1.

[0163] The above-mentioned measurement system 1 and the like can also be provided in the various aspects described below.

[0164] (1) A measuring device comprising a thermoelectric conversion circuit, a heat flow measuring unit, and a temperature measuring unit, wherein the thermoelectric conversion circuit includes an element configured to generate an electromotive force by a temperature gradient generated by heat exchange with a measurement object, the heat flow measuring unit configured to measure the heat flow generated in the measurement object based on an electrical signal generated in the thermoelectric conversion circuit by the electromotive force, and the temperature measuring unit configured to cause a second current to flow in at least a portion of the thermoelectric conversion circuit along a path along which a first current generated by the electromotive force flows, measure the resistance of at least a portion of the thermoelectric conversion circuit, and measure the temperature of the measurement object based on the resistance.

[0165] With such a configuration, the heat flow and temperature at the same location can be measured.

[0166] (2) The measuring device according to (1) above, wherein the element is configured to generate the electromotive force based on an anomalous Nernst effect.

[0167] According to such a structure, responsiveness can be improved.

[0168] (3) A measuring device according to (1) or (2) above, wherein the temperature measuring unit is configured to measure the resistance based on a difference between a measured value of a voltage when the second current flows in a first direction along the path and a measured value of a voltage when the second current flows in a second direction opposite to the first direction.

[0169] According to such a configuration, the temperature measurement accuracy can be improved.

[0170] (4) A measuring device according to any one of (1) to (3) above, wherein the temperature measuring unit is configured to separate a first voltage value based on the electromotive force and a second voltage value caused by the resistance of the element from a measured value of the voltage when a periodic current is allowed to flow as the second current through at least a portion of the thermoelectric conversion circuit, and to measure the resistance based on the first voltage value.

[0171] According to such a configuration, the temperature measurement accuracy can be improved.

[0172] (5) A measuring device according to any one of (1) to (4), wherein the temperature measuring unit is configured to measure the temperature of the measuring object based on correction information for correcting the relationship between the measured resistance and the temperature of the measuring object and the resistance.

[0173] According to such a configuration, the temperature measurement accuracy can be improved.

[0174] (6) The measuring device according to any one of (1) to (5) above further comprises: a temperature difference measuring unit, which is configured to measure the temperature difference between the first surface of the element opposite to the measuring object and the second surface on the opposite side based on the voltage generated by the electromotive force in the thermoelectric conversion circuit, and the measuring device is configured to measure the temperature of the first surface or the second surface based on the measured temperature and the measured temperature difference.

[0175] According to such a configuration, the temperature can be measured with higher accuracy.

[0176] (7) An information processing system comprising the measuring device described in any one of (1) to (6) above, and at least one processor, wherein the at least one processor is configured to perform processing based on the temperature of the measuring object measured by the temperature measuring unit and the heat flow measured using the heat flow measuring unit.

[0177] With such a configuration, the heat flow and temperature at the same location can be measured.

[0178] (8) A measurement method comprising the following steps: a heat flow measurement step of measuring a heat flow generated in a measurement object based on an electrical signal generated by an electromotive force in a thermoelectric conversion circuit, the thermoelectric conversion circuit including an element configured to generate the electromotive force by a temperature gradient generated by heat exchange with the measurement object; a current control step of controlling a power supply so that a second current flows in at least a portion of the thermoelectric conversion circuit along a path along which a first current generated by the electromotive force flows; a resistance measurement step of measuring the resistance of at least a portion of the thermoelectric conversion circuit by the second current; and a temperature measurement step of measuring the temperature of the measurement object based on the measured resistance.

[0179] With such a configuration, the heat flow and temperature at the same location can be measured.

[0180] Of course, it is not limited to this.

[0181] Finally, while various embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. The new embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the spirit of the invention. Such embodiments and their variations are intended to be within the scope and spirit of the invention and are encompassed by the invention set forth in the claims and their equivalents.

[0182] Explanation of symbols

[0183] 1: Measuring system; 2: Measuring device; 4: User terminal; 20: Measuring device; 21: Substrate; 22: Thermoelectric conversion device; 23: Measuring section; 24: Heat flow measuring section; 25: Temperature measuring section; 40: Communication bus; 41: Communication section; 42: Storage section; 43: Processor; 44: Display section; 45: Input section; 211: Contact surface; 212: Placement surface; 221: Thermoelectric conversion element; 222: First conductor section; 223: Second conductor section; 224: Measuring terminal; 241: Heat flow signal measuring section; 251: Temperature signal measuring section; 252: Power supply section; 253: Switch section; 254: Control section; OB1: Measurement object; P1: Measurement location.

Claims

1. A measuring device comprising a thermoelectric conversion circuit, a heat flow measuring unit, and a temperature measuring unit, The thermoelectric conversion circuit includes an element configured to generate an electromotive force by a temperature gradient generated by heat exchange with a measurement object. The heat flow measuring unit is configured to measure the heat flow generated in the measurement object based on the electric signal generated in the thermoelectric conversion circuit by the electromotive force. The temperature measuring unit is configured to flow a second current through at least a portion of the thermoelectric conversion circuit along a path along which the first current generated by the electromotive force flows, measure resistance of at least a portion of the thermoelectric conversion circuit, and measure the temperature of the measurement object based on the resistance.

2. The measuring device according to claim 1, wherein The element is configured to generate the electromotive force based on the anomalous Nernst effect.

3. The measuring device according to claim 1 or 2, wherein The temperature measuring unit is configured to measure the resistance based on a difference between a voltage measured when the second current flows in a first direction along the path and a voltage measured when the second current flows in a second direction opposite to the first direction.

4. The measuring device according to any one of claims 1 to 3, wherein The temperature measuring unit is configured to separate a first voltage value based on the electromotive force and a second voltage value caused by the resistance of the element from a measured value of the voltage when a periodic current is allowed to flow as the second current through at least a portion of the thermoelectric conversion circuit, and to measure the resistance based on the first voltage value.

5. The measuring device according to any one of claims 1 to 4, wherein The temperature measuring unit is configured to measure the temperature of the measurement object based on correction information for correcting a relationship between the measured resistance and the temperature of the measurement object and the resistance.

6. The measuring device according to any one of claims 1 to 5, further comprising: a temperature difference measuring unit configured to measure a temperature difference between a first surface of the element facing the measurement object and a second surface on the opposite side based on a voltage generated in the thermoelectric conversion circuit by the electromotive force; The measuring device is configured to measure the temperature of the first surface or the second surface based on the measured temperature and the measured temperature difference.

7. An information processing system comprising the measuring device according to any one of claims 1 to 6 and at least one processor, wherein: The at least one processor is configured to execute processing based on the temperature of the measurement object measured by the temperature measuring unit and the heat flow measured by the heat flow measuring unit.

8. A determination method comprising the following steps: a heat flow measuring step of measuring a heat flow generated in a measurement object based on an electrical signal generated by an electromotive force in a thermoelectric conversion circuit, the thermoelectric conversion circuit including an element configured to generate the electromotive force by a temperature gradient generated by heat exchange with the measurement object; a current control step of controlling a power source so that a second current flows in at least a portion of the thermoelectric conversion circuit along a path along which the first current generated by the electromotive force flows; a resistance measuring step of measuring the resistance of at least a portion of the thermoelectric conversion circuit using the second current; as well as The temperature measuring step measures the temperature of the measurement object based on the measured resistance.

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