High-temperature protection polyimide composite film and jumping transfer material conveying method thereof

Abstract

The invention relates to a high-temperature protection polyimide composite film and a jumping transfer material conveying method thereof. The polyimide composite film comprises a first PI layer, upper glue, a second PI layer, lower glue and a release film which are arranged layer by layer from outside to inside, a glue composition used by the upper layer glue comprises the following components in parts by weight: 25-40 parts of a polysiloxane composition; 0.8 to 1.4 parts of an anchoring agent; 0.6-1 part of a catalyst; 25-30 parts of a solvent 1; 25-30 parts of a solvent 2; a polysiloxane composition used by the lower layer glue comprises the following components in parts by weight: 50-80 parts of a polysiloxane composition; 0.5 to 0.8 part of anchoring agent; 0.3 to 0.6 part of a catalyst; 0.1 to 0.3 part of an auxiliary agent; 18 to 28 parts of a solvent 1; the invention has the following advantages: the combination of the polysiloxane composition and the auxiliary agent avoids the abnormal phenomenon of silicon transfer or adhesive residue after reflow soldering, the membrane material has stiffness and rigidity, effectively realizes support and adsorption, and realizes complete and stable jumping transfer of the composite membrane by controlling the peeling strength and material transfer speed of the adhesive layer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, in particular to a high-temperature protective polyimide composite film and a jumping transfer method thereof. Background Art

[0002] The flip-chip reflow process creates closer physical contact between the chip's bumps and the substrate's pads. This requires applying flux to the substrate's pads before soldering. After soldering, the flux is removed with a detergent, followed by a water rinse and drying process. However, many electronic components cannot be cleaned, yet high surface cleanliness requirements are required. Therefore, a protective polyimide overcoat is applied to the surface before reflow, which is then removed in a cleanroom environment after reflow.

[0003] However, traditional polyimide protective films and the silicone used in them have insufficient temperature resistance. Under the high temperature of reflow soldering, residual glue or silicone transfer is easily generated, thereby contaminating the surface appearance of the protected material. In severe cases, it may even cause the decomposition of the silicon-oxygen main chain and methyl in the silicone, resulting in damage to the film structure.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the Invention

[0005] In view of the deficiencies in the prior art, the present invention discloses a high-temperature protective polyimide composite film and a jumping transfer method thereof.

[0006] The technical solutions adopted in the present invention are as follows:

[0007] A high-temperature protective polyimide composite film comprises a first PI layer, an upper glue layer, a second PI layer, a lower glue layer and a release film, which are arranged layer by layer from the outside to the inside; the glue composition used for the upper glue layer comprises the following components, counted in parts by weight: a polysiloxane composition, 25 to 40 parts; an anchoring agent, 0.8 to 1.4 parts; a catalyst, 0.6 to 1 part; a solvent 1, 25 to 30 parts; and a solvent 2, 25 to 30 parts; the polysiloxane composition used for the lower glue layer comprises the following components, counted in parts by weight: a polysiloxane composition, 50 to 80 parts; an anchoring agent, 0.5 to 0.8 parts; a catalyst, 0.3 to 0.6 parts; an auxiliary agent, 0.1 to 0.3 parts; a solvent 1, 18 to 28 parts; and a solvent 2, 30 to 65 parts.

[0008] Furthermore, the polysiloxane composition comprises:

[0009] Structure 1:

[0010] Structure 2:

[0011] Structure three:

[0012] Furthermore, the structure 1 of the polysiloxane composition is a polysiloxane composition having a cyclic repeating unit consisting of a methyl group, a carbon-carbon double bond, a hydroxyl group and 8 silicon-oxygen bonds.

[0013] Furthermore, the polysiloxane composition has structure 1 and a molecular weight of 4,000 to 10,000.

[0014] Furthermore, the vinyl content in the molecule of the structure 2 of the polysiloxane composition is 0.8-2.5%.

[0015] Furthermore, the structure three of the polysiloxane composition is a polysiloxane composition having a ring-shaped repeating unit consisting of a carbon-carbon double bond, a hydroxyl group and 8 silicon-oxygen bonds, and its molecular weight is 650-7000.

[0016] Furthermore, the auxiliary agent is a high temperature oxidant, and its structural formula is Wherein, R1, R2, and R3 include at least one of a silicon-oxygen bond, a benzene ring, a triazine ring, and an aromatic ether.

[0017] Furthermore, the anchoring agent includes one or more combinations of vinyl siloxane polymer, vinyl polymer, and epoxy silane, and the catalyst is a platinum catalyst; the solvent 1 is at least one of xylene, toluene, or ethyl acetate; and the solvent 2 is at least one of toluene, xylene, ethyl acetate, acetone, or petroleum ether.

[0018] Furthermore, the thickness of the first PI layer is smaller than that of the second PI layer.

[0019] A high-temperature protective polyimide composite film jump transfer method comprises the following steps:

[0020] Step S1, die-cutting: a circular die-cutting knife is arranged above a conveyor belt, and the circular die-cutting knife moves downward to cut into the release film of the composite film, with a cutting depth of 1 / 5 to 1 / 3 of the thickness of the release film, and removes the edge material, leaving the middle die-cut piece;

[0021] Step S2: Cutting the die-cut coil into corresponding small rolls;

[0022] Step S3: horizontal material transfer: the composite film is transferred horizontally via a conveyor belt, and the end of the conveyor belt is set as a material transfer position, which is a right angle with no chamfer downwards;

[0023] Step S4, jumping transfer, a material receiving platform is provided in front of the conveyor belt, the outermost layer material of the material receiving platform is a low surface tension material, including at least one of polytetrafluoroethylene, polysiloxane and transparent crystalline resin (TPX), the distance between the material transfer position and the material receiving platform is 0.1 to 0.5 mm, the material transfer speed of the transmission belt is 30 to 90 cm / s, and when the material is transferred to the top position, the composite film jumps onto the material receiving platform, and the material receiving platform is at least one of a flat structure and a hollow structure in any form.

[0024] The beneficial effects of the present invention are as follows:

[0025] 1. The polysiloxane composition is combined with additives to prevent the decomposition of the silicon-oxygen main chain and methyl groups, avoiding the abnormal phenomenon of silicon transfer or residual glue after reflow soldering. The upper layer of glue has high viscosity and good temperature resistance, and the lower layer of glue has certain viscosity and good temperature resistance. It can be used at 260°C (20min) on the glass and silicon wafer surfaces without residual glue and transfer, and can meet the requirements of die-cutting without falling off and good transfer usability. It can realize the automatic bonding of high-temperature protective film by the packaging reflow soldering machine, and play a good protective role on the surface of chips and moldings.

[0026] 2. Heat-induced oxidation and decomposition are more likely to occur inside the Si-O-Si chain in the additive, between the side chain and the central Si. The presence of high-temperature-resistant and sterically hindered functional groups restricts the movement of the chain and acts as an endothermic center, minimizing heat transfer to the main chain and reducing the thermal impact on the polymer system.

[0027] 3. The cyclic structure in the additive, taking the benzene ring as an example, gives the additive excellent stability and extremely high antioxidant properties. The benzene ring exhibits the highest electronegativity in its local environment and has a high electron density. An electron-attracting group near the adjacent silicon significantly reduces the bonding activity between silicon and the R group, thereby effectively hindering the oxidation of silicon. The high resonance energy within the ring and the stable benzene conjugated structure can well disperse the radiation energy, thereby improving the efficiency of the collision-induced decay process and reducing the molecular chain breakage of the local Si-O bond caused by excitation, which is beneficial to improving the structural stability of the substance.

[0028] 4. The film-sticking process requires die-cutting first and then automatic suction and sticking on the machine. If the viscosity of the polyimide composite film is too high, it will affect the transfer and suction. If the viscosity is too low, it will easily fall off during the die-cutting process, affecting the die-cutting waste discharge. Conventional single-layer polyimide tapes usually adjust the film stiffness by the thickness of the PI layer. It is difficult to achieve a balance in the die-cutting, material transfer and suction performance. The higher the film thickness, the greater the film stiffness itself. The die-cut composite film can be transferred from the release film to the suction table more smoothly, but it is easy for the suction cup to not stick; the smaller the thickness, the smaller the film stiffness itself, and the material transfer is prone to failure, but it can adapt to the suction cup and complete better suction. The composite film designed in this application reduces the overall rigidity of the film. The two-layer structure maintains the stiffness, which can effectively realize the die-cutting waste discharge process, the process during the jumping transfer process, and the perfect adsorption during suction.

[0029] 5. During the material transfer process, strictly control the peeling strength of the adhesive layer and the speed of material transfer to achieve complete and stable jumping transfer of the composite film. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Schematic diagram of the structure of a high-temperature protective polyimide composite membrane.

[0031] Figure 2 Schematic diagram of the material transfer method of polyimide composite film jumping transfer.

[0032] In the figure: 1. First PI layer; 2. Upper adhesive layer; 3. Second PI layer; 4. Lower adhesive layer; 5. Release film. DETAILED DESCRIPTION

[0033] The specific embodiments of the present invention will be described below with reference to the accompanying drawings.

[0034] Example 1:

[0035] A high temperature protective polyimide composite film, such as Figure 1 The method comprises a first PI layer 1, an upper glue layer 2, a second PI layer 3, a lower glue layer 4 and a release film 5 which are arranged layer by layer from the outside to the inside.

[0036] The total thickness of the composite film is 150 (± 10) um, of which the thickness of the first PI layer 1 is 25 um, the thickness of the upper glue layer 2 is 10 um, the thickness of the second PI layer 3 is 36 um, the thickness of the lower glue layer 4 is 30 um, and the thickness of the release film 5 is 50 um.

[0037] The peeling strength of the lower layer adhesive is controlled at 2-10gf / 25mm, and the release film is made of PET base film.

[0038] The glue composition used for the upper glue layer includes:

[0039] Structure 1 of polysiloxane composition: Its molecular weight is 10,000.

[0040] Structure 2 of the polysiloxane composition: The ethylene content is 1%.

[0041] Structure 3 of the polysiloxane composition: Its molecular weight is 2000.

[0042] The anchoring agent is vinyl siloxane polymer, 1 part.

[0043] The catalyst is a platinum catalyst, 0.6 parts.

[0044] Solvent 1 is xylene, 20 parts.

[0045] Solvent 2 is ethyl acetate, 28.3 parts.

[0046] 50 parts of the polysiloxane composition used for the lower layer glue, including:

[0047] Structure 1 of polysiloxane composition: Its molecular weight is 8000.

[0048] Structure 2 of the polysiloxane composition: The ethylene content is 1.8%.

[0049] Structure 3 of the polysiloxane composition: Its molecular weight is 4200.

[0050] The anchoring agent is vinyl siloxane polymer, 1 part;

[0051] Catalyst platinum catalyst, 0.6 parts;

[0052] The auxiliary agent is 0.1 part of high temperature oxidant, its structural formula The high-temperature antioxidant structure contains a benzene ring and an aromatic ether, wherein R1 is a benzene ring, R2 is an aromatic ether, and R3 is a benzene ring.

[0053] Solvent 1 is xylene, 20 parts.

[0054] Solvent 2 is ethyl acetate, 28.3 parts.

[0055] A method for preparing a high-temperature protective polyimide composite film comprises the following steps:

[0056] Step S1, coating 1, coating the lower layer glue composition on a 36um PI film, baking it in a drying tunnel with a maximum temperature of 150°C for 7 minutes, controlling the baking time in the highest temperature section to 4 minutes, and controlling the dry glue thickness to 30um. Use 50um PET film for compounding to prepare a low-viscosity semi-finished product roll.

[0057] Step S2, coating 2, coating the upper glue composition on the 25umPI film, baking it at a maximum temperature of 150°C for 2.5min, controlling the baking time in the highest temperature section to 1.5min, and controlling the dry glue thickness to 10um. Use low-viscosity semi-finished product rolls for compounding, and the 36umPI un-glued surface is the compounding surface.

[0058] The material transfer method of high temperature protection polyimide composite film jump transfer, such as Figure 2 As shown, the following steps are included:

[0059] Step S1, die-cutting. The die-cutting circular knife is arranged above the conveyor belt. The die-cutting circular knife moves downward to cut into the release film of the composite film. The cutting depth is 1 / 4 of the thickness of the release film. The edge material is removed to leave the middle die-cut piece.

[0060] Step S2: Cutting: Cut the die-cut roll into corresponding small rolls.

[0061] Step S3, horizontal material transfer: the slit composite film is fed horizontally through a conveyor belt, and the end of the conveyor belt is set as a material transfer position, which is a right angle with no chamfer downward.

[0062] Step S4, jumping transfer, a material receiving platform is set in front of the conveyor belt, the outermost layer material of the material receiving platform is a low surface tension material, including polytetrafluoroethylene, polysiloxane and transparent crystalline resin (TPX), the distance between the material transfer position and the material receiving platform is 0.5mm, the material transfer speed of the transmission belt is 40cm / s, and after die-cutting, the composite film jumps onto the material receiving platform. The material receiving platform is at least one of a flat structure and a hollow structure in any form.

[0063] Product test results:

[0064] Material placement rate (from the time the tape is die-cut to the time it runs on the material transfer decoration, and the material is successfully transferred to the platform by jumping and transferring to the designated position on the platform. The number of materials transferred to the designated position / total number = material transfer rate): 100%.

[0065] The rate of material rejection (number of materials that cannot be picked up by the machine head / total number = material rejection rate) is 0%.

[0066] Room temperature SUS peel strength (GB / T-2792): 4.5gf / 25mm.

[0067] Residual adhesive on silicon wafer substrate (according to the operation method of GB / T-2792, stick the tape to the silicon wafer, let it stand at room temperature for 30 minutes, bake it in a 260℃ oven for 20 minutes, remove the silicon wafer and measure it after cooling, peel off the tape and observe under a 20x microscope): no residual adhesive, no transfer.

[0068] Residual adhesive on glass substrate (according to the operation method of GB / 2792, stick the tape to the silicon wafer, let it stand at room temperature for 30 minutes, bake it in a 260℃ oven for 20 minutes, remove the silicon wafer and measure it after cooling, peel off the tape and observe under a 20x microscope): no residual adhesive, no transfer.

[0069] Example 2:

[0070] A high temperature protective polyimide composite film, such as Figure 1 The method comprises a first PI layer 1, an upper adhesive layer 2, a second PI layer 3, a lower adhesive layer 4 and a release film 5 which are arranged layer by layer from the outside to the inside.

[0071] The total thickness of the composite film is 150 (± 10) um, of which the thickness of the first PI layer 1 is 25 um, the thickness of the upper glue layer 2 is 10 um, the thickness of the second PI layer 3 is 36 um, the thickness of the lower glue layer 4 is 30 um, and the thickness of the release film 5 is 50 um.

[0072] The peeling strength of the lower layer adhesive is controlled at 2-10gf / 25mm, and the release film is made of PET base film.

[0073] The glue composition used for the upper glue layer includes:

[0074] Structure 1 of polysiloxane composition: Its molecular weight is 10,000.

[0075] Structure 2 of the polysiloxane composition: The ethylene content is 1%.

[0076] Structure 3 of the polysiloxane composition: Its molecular weight is 2000.

[0077] The anchoring agent is vinyl siloxane polymer, 1 part.

[0078] The catalyst is a platinum catalyst, 0.8 parts.

[0079] Solvent 1 is xylene, 30 parts.

[0080] Solvent 2 is ethyl acetate, 30 parts.

[0081] 50 parts of the polysiloxane composition used for the lower layer glue, including:

[0082] Structure 1 of polysiloxane composition: Its molecular weight is 5500.

[0083] Structure 2 of the polysiloxane composition: The ethylene content is 1.5%.

[0084] Structure 3 of the polysiloxane composition: Its molecular weight is 3000.

[0085] The anchoring agent is vinyl siloxane polymer, 1 part;

[0086] Catalyst platinum catalyst, 0.6 parts;

[0087] The auxiliary agent is 0.1 part of high temperature oxidant, its structural formula The high-temperature antioxidant structure contains a benzene ring and an aromatic ether, wherein R1 is a benzene ring, R2 is an aromatic ether, and R3 is a benzene ring.

[0088] Solvent 1 is xylene, 20 parts.

[0089] Solvent 2 is ethyl acetate, 28.3 parts.

[0090] The high temperature protective polyimide composite film was prepared by the same method as in Example 1.

[0091] The material transfer method of high temperature protection polyimide composite film jump transfer, such as Figure 2 As shown, the following steps are included:

[0092] Step S1, die-cutting. The die-cutting circular knife is arranged above the conveyor belt. The die-cutting circular knife moves downward to cut into the release film of the composite film. The cutting depth is 1 / 4 of the thickness of the release film. The edge material is removed to leave the middle die-cut piece.

[0093] Step S2: Cutting: Cut the die-cut roll into corresponding small rolls.

[0094] Step S3, horizontal material transfer: the slit composite film is fed horizontally through a conveyor belt, and the end of the conveyor belt is set as a material transfer position, which is a right angle with no chamfer downward.

[0095] Step S4, jumping transfer, a material receiving platform is set in front of the conveyor belt, the outermost layer material of the material receiving platform is a low surface tension material, including polytetrafluoroethylene, polysiloxane and transparent crystalline resin (TPX), the distance between the material transfer position and the material receiving platform is 0.5mm, the material transfer speed of the transmission belt is 40cm / s, and after die-cutting, the composite film jumps onto the material receiving platform. The material receiving platform is at least one of a flat structure and a hollow structure in any form.

[0096] Product test results:

[0097] Nesting rate: 100%.

[0098] Adhesion and rejection rate: 0%.

[0099] Room temperature SUS peel strength: 7.2gf / 25mm.

[0100] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0101] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0102] Example 3:

[0103] A high temperature protective polyimide composite film, such as Figure 1 The method comprises a first PI layer 1, an upper glue layer 2, a second PI layer 3, a lower glue layer 4 and a release film 5 which are arranged layer by layer from the outside to the inside.

[0104] The total thickness of the composite film is 150 (± 10) um, of which the thickness of the first PI layer 1 is 25 um, the thickness of the upper glue layer 2 is 10 um, the thickness of the second PI layer 3 is 36 um, the thickness of the lower glue layer 4 is 30 um, and the thickness of the release film 5 is 50 um.

[0105] The peeling strength of the lower layer adhesive is controlled at 2-10gf / 25mm, and the release film is made of PET base film.

[0106] The glue composition used for the upper glue layer includes:

[0107] Structure 1 of polysiloxane composition: Its molecular weight is 10,000.

[0108] Structure 2 of the polysiloxane composition: The ethylene content is 1%.

[0109] Structure 3 of the polysiloxane composition: Its molecular weight is 2000.

[0110] The anchoring agent is vinyl siloxane polymer, 1 part.

[0111] The catalyst is a platinum catalyst, 0.8 parts.

[0112] Solvent 1 is xylene, 30 parts.

[0113] Solvent 2 is ethyl acetate, 30 parts.

[0114] 50 parts of the polysiloxane composition used for the lower layer glue, including:

[0115] Structure 1 of polysiloxane composition: Its molecular weight is 4000.

[0116] Structure 2 of the polysiloxane composition: The ethylene content is 1.0%.

[0117] Structure 3 of the polysiloxane composition: Its molecular weight is 2500.

[0118] The anchoring agent is vinyl siloxane polymer, 1 part;

[0119] Catalyst platinum catalyst, 0.6 parts;

[0120] The auxiliary agent is 0.1 part of high temperature oxidant, its structural formula The high-temperature antioxidant structure contains a benzene ring and an aromatic ether, wherein R1 is a benzene ring, R2 is an aromatic ether, and R3 is a benzene ring.

[0121] Solvent 1 is xylene, 20 parts.

[0122] Solvent 2 is ethyl acetate, 28.3 parts.

[0123] The high temperature protective polyimide composite film was prepared by the same method as in Example 1.

[0124] The material transfer method of high temperature protection polyimide composite film jump transfer, such as Figure 2 As shown, the following steps are included:

[0125] Step S1, die-cutting. The die-cutting circular knife is arranged above the conveyor belt. The die-cutting circular knife moves downward to cut into the release film of the composite film. The cutting depth is 1 / 4 of the thickness of the release film. The edge material is removed to leave the middle die-cut piece.

[0126] Step S2: Cutting: Cut the die-cut roll into corresponding small rolls.

[0127] Step S3, horizontal material transfer: the slit composite film is fed horizontally through a conveyor belt, and the end of the conveyor belt is set as a material transfer position, which is a right angle with no chamfer downward.

[0128] Step S4, jumping transfer, a material receiving platform is set in front of the conveyor belt, the outermost layer material of the material receiving platform is a low surface tension material, including polytetrafluoroethylene, polysiloxane and transparent crystalline resin (TPX), the distance between the material transfer position and the material receiving platform is 0.5mm, the material transfer speed of the transmission belt is 40cm / s, and after die-cutting, the composite film jumps onto the material receiving platform. The material receiving platform is at least one of a flat structure and a hollow structure in any form.

[0129] Product test results:

[0130] Nesting rate: 100%.

[0131] Adhesion and rejection rate: 0%.

[0132] Room temperature SUS peel strength: 8.2gf / 25mm.

[0133] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0134] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0135] Example 4:

[0136] A high temperature protective polyimide composite film, such as Figure 1 The method comprises a first PI layer 1, an upper glue layer 2, a second PI layer 3, a lower glue layer 4 and a release film 5 which are arranged layer by layer from the outside to the inside.

[0137] The total thickness of the composite film is 150 (± 10) um, of which the thickness of the first PI layer 1 is 25 um, the thickness of the upper glue layer 2 is 10 um, the thickness of the second PI layer 3 is 36 um, the thickness of the lower glue layer 4 is 30 um, and the thickness of the release film 5 is 50 um.

[0138] The peeling strength of the lower layer adhesive is controlled at 2-10gf / 25mm, and the release film is made of PET base film.

[0139] The glue composition used for the upper glue layer includes:

[0140] Structure 1 of polysiloxane composition: Its molecular weight is 10,000.

[0141] Structure 2 of the polysiloxane composition: The ethylene content is 1%.

[0142] Structure 3 of the polysiloxane composition: Its molecular weight is 2000.

[0143] The anchoring agent is vinyl siloxane polymer, 1 part.

[0144] The catalyst is a platinum catalyst, 0.8 parts.

[0145] Solvent 1 is xylene, 30 parts.

[0146] Solvent 2 is ethyl acetate, 30 parts.

[0147] 50 parts of the polysiloxane composition used for the lower layer glue, including:

[0148] Structure 1 of polysiloxane composition: Its molecular weight is 8000.

[0149] Structure 2 of the polysiloxane composition: The ethylene content is 1.8%.

[0150] Structure 3 of the polysiloxane composition: Its molecular weight is 4200.

[0151] The anchoring agent is vinyl siloxane polymer, 1 part;

[0152] Catalyst platinum catalyst, 0.6 parts;

[0153] The auxiliary agent is 0.1 part of high temperature oxidant, its structural formula The high-temperature oxidant structure contains a triazine ring and an aromatic ether, wherein R1 is an aromatic ether, R2 is an aromatic ether, and R3 is a triazine ring.

[0154] Solvent 1 is xylene, 20 parts.

[0155] Solvent 2 is ethyl acetate, 28.3 parts.

[0156] The high temperature protective polyimide composite film was prepared by the same method as in Example 1.

[0157] The material transfer method of high temperature protection polyimide composite film jump transfer, such as Figure 2 As shown, the following steps are included:

[0158] Step S1, die-cutting. The die-cutting circular knife is arranged above the conveyor belt. The die-cutting circular knife moves downward to cut into the release film of the composite film. The cutting depth is 1 / 4 of the thickness of the release film. The edge material is removed to leave the middle die-cut piece.

[0159] Step S2: Cutting: Cut the die-cut roll into corresponding small rolls.

[0160] Step S3, horizontal material transfer: the slit composite film is fed horizontally through a conveyor belt, and the end of the conveyor belt is set as a material transfer position, which is a right angle with no chamfer downward.

[0161] Step S4, jumping transfer, a material receiving platform is set in front of the conveyor belt, the outermost layer material of the material receiving platform is a low surface tension material, including polytetrafluoroethylene, polysiloxane and transparent crystalline resin (TPX), the distance between the material transfer position and the material receiving platform is 0.5mm, the material transfer speed of the transmission belt is 40cm / s, and after die-cutting, the composite film jumps onto the material receiving platform. The material receiving platform is at least one of a flat structure and a hollow structure in any form.

[0162] Product test results:

[0163] Nesting rate: 100%.

[0164] Adhesion and rejection rate: 0%.

[0165] Room temperature SUS peel strength: 4.3gf / 25mm.

[0166] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0167] Example 5:

[0168] The difference from Example 1 is that:

[0169] Replace the anchoring agent with a vinyl polymer.

[0170] Product test results:

[0171] Nesting rate: 100%.

[0172] Adhesion and rejection rate: 0%.

[0173] Room temperature SUS peel strength: 4.2gf / 25mm.

[0174] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0175] Example 6:

[0176] The difference from Example 1 is that:

[0177] The anchoring agent was replaced with epoxy silane.

[0178] Product test results:

[0179] Nesting rate: 100%.

[0180] Adhesion and rejection rate: 0%.

[0181] Room temperature SUS peel strength: 4.3gf / 25mm.

[0182] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0183] Example 7:

[0184] The difference from Example 1 is that:

[0185] The anchoring agent is replaced by a vinyl siloxane polymer, a vinyl polymer, and an epoxy silane composition. The difference from Example 1 is:

[0186] The anchoring agent was replaced with epoxy silane.

[0187] Product test results:

[0188] Nesting rate: 100%.

[0189] Adhesion and rejection rate: 0%.

[0190] Room temperature SUS peel strength: 4.4gf / 25mm.

[0191] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0192] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0193] Example 8:

[0194] The difference from Example 1 is that:

[0195] Solvent 1 was replaced with toluene.

[0196] Product test results:

[0197] Nesting rate: 100%.

[0198] Adhesion and rejection rate: 0%.

[0199] Room temperature SUS peel strength: 4.3gf / 25mm.

[0200] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0201] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0202] Example 9:

[0203] The difference from Example 1 is that:

[0204] Solvent 1 was replaced with ethyl acetate.

[0205] Product test results:

[0206] Nesting rate: 100%.

[0207] Adhesion and rejection rate: 0%.

[0208] Room temperature SUS peel strength: 4.3gf / 25mm.

[0209] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0210] Example 10:

[0211] The difference from Example 1 is that:

[0212] Solvent 1 was replaced with a mixture of xylene and toluene.

[0213] Product test results:

[0214] Nesting rate: 100%.

[0215] Adhesion and rejection rate: 0%.

[0216] Room temperature SUS peel strength: 4.3gf / 25mm.

[0217] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0218] Example 11:

[0219] The difference from Example 1 is that:

[0220] Solvent 1 was replaced with a mixture of xylene and ethyl acetate.

[0221] Product test results:

[0222] Nesting rate: 100%.

[0223] Adhesion and rejection rate: 0%.

[0224] Room temperature SUS peel strength: 4.3gf / 25mm.

[0225] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0226] Example 12:

[0227] The difference from Example 1 is that:

[0228] Solvent 2 was replaced with toluene.

[0229] Product test results:

[0230] Nesting rate: 100%.

[0231] Adhesion and rejection rate: 0%.

[0232] Room temperature SUS peel strength: 4.2gf / 25mm.

[0233] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0234] Example 13:

[0235] The difference from Example 1 is that:

[0236] Solvent 2 was replaced with xylene.

[0237] Product test results:

[0238] Nesting rate: 100%.

[0239] Adhesion and rejection rate: 0%.

[0240] Room temperature SUS peel strength: 4.2gf / 25mm.

[0241] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0242] Example 14:

[0243] The difference from Example 1 is that:

[0244] Solvent 2 was replaced with acetone.

[0245] Product test results:

[0246] Nesting rate: 100%.

[0247] Adhesion and rejection rate: 0%.

[0248] Room temperature SUS peel strength: 4.2gf / 25mm.

[0249] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0250] Example 15:

[0251] The difference from Example 1 is that:

[0252] Solvent 2 was replaced with petroleum ether.

[0253] Product test results:

[0254] Nesting rate: 100%.

[0255] Adhesion and rejection rate: 0%.

[0256] Room temperature SUS peel strength: 4.2gf / 25mm.

[0257] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0258] Example 16:

[0259] The difference from Example 1 is that:

[0260] Solvent 2 was replaced with a mixture of ethyl acetate and acetone.

[0261] Product test results:

[0262] Nesting rate: 100%.

[0263] Adhesion and rejection rate: 0%.

[0264] Room temperature SUS peel strength: 4.3gf / 25mm.

[0265] Silicon substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer. Glass substrate adhesive residue (260℃ for 20min): No adhesive residue, no transfer.

[0266] Comparative Example 1:

[0267] The difference from Example 1 is that:

[0268] The thickness of the upper glue layer 2 is 20 μm, and the thickness of the second PI layer 3 is 25 μm.

[0269] Product test results:

[0270] Nesting rate: 90%.

[0271] Suction and sticking rate: 3%.

[0272] Room temperature SUS peel strength: 4.4gf / 25mm.

[0273] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0274] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0275] Comparative analysis: The thicker the upper glue layer 2, the thinner the second PI layer 3, which affects the flatness of the composite film surface and the stability of the material transfer, ultimately reducing the product's discharge rate and increasing the suction and throwing rate.

[0276] Comparative Example 2:

[0277] The difference from Example 1 is that:

[0278] After removing the first PI layer 1 and the upper glue layer 2, the thickness of the second PI layer 3 becomes 75 μm.

[0279] Product test results:

[0280] Nesting rate: 100%.

[0281] Adhesion and rejection rate: 58%.

[0282] Room temperature SUS peel strength: 5.1gf / 25mm.

[0283] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0284] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0285] Comparative analysis: Using a single-layer PI layer, the thickness of the PI is increased to meet the thickness size requirements. The thick film itself has greater rigidity. If there is a slight deformation, the PI film cannot match the suction nozzle during the suction process, and the material is easily thrown away.

[0286] Comparative Example 3:

[0287] The difference from Example 1 is that:

[0288] Remove the additives used in the lower layer glue 4.

[0289] Product test results:

[0290] Nesting rate: 100%.

[0291] Adhesion and rejection rate: 0%.

[0292] Room temperature SUS peel strength: 4.5gf / 25mm.

[0293] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, ghost transfer.

[0294] Residual adhesive on glass substrate (260℃20min): There is offset print under the microscope.

[0295] Comparative analysis: After removing the additives, residual glue appeared in the product test, which proved to affect the high temperature stability of the lower layer of glue.

[0296] Comparative Example 4:

[0297] The difference from Example 4 is that:

[0298] 50 parts of the polysiloxane composition used for the lower layer glue, including:

[0299] Structure 1 of polysiloxane composition: Its molecular weight is 3800.

[0300] Structure 2 of the polysiloxane composition: The ethylene content is 1.0%.

[0301] Structure 3 of the polysiloxane composition: Its molecular weight is 2500.

[0302] Product test results:

[0303] Nesting rate: 85%.

[0304] Adhesion and rejection rate: 0%.

[0305] Room temperature SUS peel strength: 11.0gf / 25mm.

[0306] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0307] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0308] Comparative analysis: By reducing the molecular weight of the polysiloxane composition structure 1, the peel strength of the lower layer of glue is increased to above 10gf / 25mm. If the peel strength is too high, the release film is likely to stick during discharge, which in turn affects the discharge rate.

[0309] Comparative Example 5:

[0310] The difference from Example 4 is that:

[0311] 50 parts of the polysiloxane composition used for the lower layer glue, including:

[0312] Structure 1 of polysiloxane composition: Its molecular weight is 13,000.

[0313] Product test results:

[0314] Material placement rate: Unable to cut, easy to fall off.

[0315] Suction and sticking material throwing rate: cannot be cut, easy to fall off.

[0316] Room temperature SUS peel strength: 1.8gf / 25mm.

[0317] Silicon wafer substrate adhesive residue (260℃20min): no adhesive residue, no transfer.

[0318] Residual adhesive on glass substrate (260℃20min): no residual adhesive, no transfer.

[0319] Comparative analysis: Increasing the molecular weight of the polysiloxane composition structure 1 results in a composite film with too low peel strength to meet the requirements of subsequent processes and processing.

[0320] Comparative Example 5:

[0321] The difference from Example 1 is that:

[0322] The thickness of the first PI layer 1 is 36 μm, and the thickness of the second PI layer 3 is 25 μm.

[0323] Product test results:

[0324] Nesting rate: 100%.

[0325] Adsorption and rejection rate: 96%.

[0326] Comparative analysis: The thickness of the first PI layer is high and its own rigidity is large. If there is a slight deformation, the suction and sticking cannot be well adhered, resulting in suction and sticking failure and material throwing.

[0327] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0328] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A high temperature protective polyimide composite film, characterized in that, The invention comprises a first PI layer, an upper glue layer, a second PI layer, a lower glue layer and a release film arranged layer by layer from the outside to the inside; the glue composition used for the upper glue layer comprises the following components in parts by weight: Polysiloxane composition, 25-40 parts; Anchoring agent, 0.8-1.4 parts; Catalyst, 0.6-1 part; Solvent 1, 25-30 parts; Solvent 2, 25-30 parts; The polysiloxane composition used in the lower layer glue includes the following components in parts by weight: Polysiloxane composition, 50-80 parts; Anchoring agent, 0.5-0.8 parts; Catalyst, 0.3-0.6 parts; Additives, 0.1-0.3 parts; Solvent 1, 18-28 parts; Solvent 2, 30-65 parts.

2. The high temperature protective polyimide composite film according to claim 1, characterized in that: The polysiloxane composition comprises: Structure 1: Structure 2: Structure three:

3. The high temperature protective polyimide composite film according to claim 2, characterized in that: The structure 1 of the polysiloxane composition is a polysiloxane composition having a ring-shaped repeating unit consisting of a methyl group, a carbon-carbon double bond, a hydroxyl group and 8 silicon-oxygen bonds.

4. The high temperature protective polyimide composite film according to claim 3, characterized in that: The polysiloxane composition has structure 1 and a molecular weight of 4,000 to 10,000.

5. The high temperature protective polyimide composite film according to claim 2, characterized in that: The polysiloxane composition has structure 2, and the vinyl content in its molecule is 0.8-2.5%.

6. The high temperature protective polyimide composite film according to claim 2, characterized in that: The structure three of the polysiloxane composition is a polysiloxane composition having a ring-shaped repeating unit consisting of a carbon-carbon double bond, a hydroxyl group and 8 silicon-oxygen bonds, and has a molecular weight of 650 to 7000.

7. The high temperature protective polyimide composite film according to claim 1, characterized in that: The auxiliary agent is a high temperature oxidant, and its structural formula is Wherein, R1, R2, and R3 include at least one of a silicon-oxygen bond, a benzene ring, a triazine ring, and an aromatic ether.

8. The high temperature protective polyimide composite film according to claim 1, characterized in that: The anchoring agent includes one or a combination of vinyl siloxane polymer, vinyl polymer, and epoxy silane; the catalyst is a platinum catalyst; the solvent 1 is at least one of xylene, toluene, or ethyl acetate; and the solvent 2 is at least one of toluene, xylene, ethyl acetate, acetone, or petroleum ether.

9. The high temperature protective polyimide composite film according to claim 1, characterized in that: The thickness of the first PI layer is smaller than that of the second PI layer.

10. A method for transferring a high-temperature protective polyimide composite film by beating transfer according to any one of claims 1 to 9, characterized in that: The following steps are involved: Step S1, die-cutting: a circular die-cutting knife is arranged above a conveyor belt, and the circular die-cutting knife moves downward to cut into the release film of the composite film, with a cutting depth of 1 / 5 to 1 / 3 of the thickness of the release film, and removes the edge material, leaving the middle die-cut piece; Step S2: Cutting the die-cut coil into corresponding small rolls; Step S3: horizontal material transfer: the composite film is transferred horizontally via a conveyor belt, and the end of the conveyor belt is set as a material transfer position, which is a right angle with no chamfer downwards; Step S4, jumping transfer, a material receiving platform is provided in front of the conveyor belt, the outermost layer material of the material receiving platform is a low surface tension material, including at least one of polytetrafluoroethylene, polysiloxane and transparent crystalline resin (TPX), the distance between the material transfer position and the material receiving platform is 0.1 to 0.5 mm, the material transfer speed of the transmission belt is 30 to 90 cm / s, and when the material is transferred to the top position, the composite film jumps onto the material receiving platform, and the material receiving platform is at least one of a flat structure and a hollow structure in any form.

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